Semiconductor light emitting device, display device including the same, and manufacturing method thereof

Abstract

The present invention provides a semiconductor light emitting device including: a first conductivity type electrode layer; a first conductivity type semiconductor layer electrically connected to the first conductivity type electrode layer and located on the first conductivity type electrode layer; an active layer on the first conductive type semiconductor layer; the second conductive type semiconductor layer is located on the active layer and comprises a top surface, a connecting surface and a side surface, the connecting surface and the top surface form a first angle, the connecting surface and the top surface are formed adjacently, and the side surface and the connecting surface form a second angle, and the side surface and the connecting surface are formed adjacently; and a second conductivity-type electrode layer electrically connected to the second conductivity-type semiconductor layer and located on at least a portion of a top surface of the second conductivity-type semiconductor layer.

Description

Technical Field

[0001] The present invention relates to a semiconductor light-emitting device, a display device including the semiconductor light-emitting device, and a method for manufacturing the same. For example, the present invention is applicable to a vertical semiconductor light-emitting device, a display device including the vertical semiconductor light-emitting device, and a method for manufacturing the same. Background Art

[0002] In the field of display technology, display devices having excellent characteristics such as thinness and flexibility are being developed. On the contrary, among the currently commercialized main displays, representative ones are LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diodes).

[0003] On the other hand, a light-emitting diode (LED) is a well-known semiconductor light-emitting device that converts current into light. Since the commercialization of a red LED using a GaAsP (gallium arsenide phosphide) compound semiconductor in 1962, it has been used as a light source for displaying images of electronic devices mainly including information communication devices together with a GaP:N series green LED. Therefore, a solution can be proposed to use the semiconductor light-emitting device to implement a display to solve the above problems. Compared with a light-emitting device based on a filament, the semiconductor light-emitting device has various advantages such as a long lifespan, low power consumption, excellent initial driving characteristics, and high vibration resistance.

[0004] On the other hand, a display device is a light-emitting device including a plurality of such semiconductor light-emitting devices. In recent years, various methods for manufacturing a display device by mounting a plurality of such semiconductor light-emitting devices on a substrate have been proposed. For example, as a method for manufacturing a display device, a pick&place method using a transfer substrate, a method of assembling a plurality of semiconductor light-emitting devices on a substrate using an electric field and / or a magnetic field in a fluid, etc. have been proposed.

[0005] However, in the process of assembling a semiconductor light-emitting device on a substrate, there is a problem that wiring connecting a plurality of semiconductor light-emitting devices may be broken. In addition, in this case, problems also occur in terms of manufacturing cost, assembly speed, and light-emitting efficiency. Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] An object of the present invention is to provide a semiconductor light-emitting device, a display device including the semiconductor light-emitting device, and a method for manufacturing the same for solving the above problems.

[0008] An object of the present invention is to improve the upper structure of a semiconductor light-emitting device.

[0009] An object of the present invention is to give a curvature to the upper edge of a semiconductor light-emitting device.

[0010] An object of the present invention is to be able to stably deposit wirings even when the heights of respective semiconductor light-emitting devices are different in a display device including a plurality of semiconductor light-emitting devices.

[0011] The technical problems to be solved by the present invention are not limited to the above problems, and those of ordinary skill in the art can consider other technical problems not mentioned from the various embodiments described below.

[0012] Technical solutions for solving the problems

[0013] According to the present invention, there is provided a semiconductor light-emitting device including: a first conductive type electrode layer; a first conductive type semiconductor layer electrically connected to the first conductive type electrode layer and located on the first conductive type electrode layer; an active layer located on the first conductive type semiconductor layer; a second conductive type semiconductor layer located on the active layer, including a top surface, a connecting surface, and side surfaces, the connecting surface having a first angle with the top surface and being formed adjacent to the top surface, and the side surfaces having a second angle with the connecting surface and being formed adjacent to the connecting surface; and a second conductive type electrode layer electrically connected to the second conductive type semiconductor layer and located on at least a part of the top surface of the second conductive type semiconductor layer.

[0014] According to the present invention, there is provided a semiconductor light-emitting device, wherein the first angle and the second angle are less than 180 degrees.

[0015] According to the present invention, there is provided a semiconductor light-emitting device, wherein the connecting surface includes n surfaces (n is an integer of 1 or more), and the n surfaces are each formed to have an inclination less than 180 degrees with respect to each other.

[0016] According to the present invention, there is provided a semiconductor light-emitting device, wherein at least a part of the connecting surface is formed as a curved surface.

[0017] According to the present invention, there is provided a semiconductor light-emitting device, wherein the vertical length of the connecting surface is less than or equal to the vertical length of the second conductive type semiconductor layer.

[0018] According to the present invention, there is provided a semiconductor light-emitting device, wherein the vertical length of the connecting surface is 10% to 30% of the vertical length of the semiconductor light-emitting device.

[0019] According to the present invention, there is provided a semiconductor light-emitting device, wherein, in the top surface direction, the horizontal area of the connecting surface is 10% to 30% of the overall area of the semiconductor light-emitting device.

[0020] According to the present invention, there is provided a semiconductor light-emitting device, wherein a side surface includes a first side surface, the first side surface includes an inclination for connection with a connection surface, the first side surface is formed on a side surface of at least a part of an active layer and a first conductive type semiconductor layer, and the first side surface is formed at an angle of 70 degrees to 90 degrees with respect to the ground.

[0021] According to the present invention, there is provided a semiconductor light-emitting device, wherein a side surface includes a second side surface, the second side surface includes an inclination for connection with the first side surface, the second side surface is formed on a side surface of at least a part of the first conductive type semiconductor layer, and the second side surface is formed at an angle of 70 degrees to 90 degrees with respect to the ground. According to the present invention, there is provided a display device, comprising: a plurality of semiconductor light-emitting devices that emit light; and a wiring substrate including wirings electrically connected to the plurality of semiconductor light-emitting devices; at least one semiconductor light-emitting device among the plurality of semiconductor light-emitting devices includes: a first conductive type electrode layer; a first conductive type semiconductor layer electrically connected to the first conductive type electrode layer and located on the first conductive type electrode layer; an active layer located on the first conductive type semiconductor layer; a second conductive type semiconductor layer located on the active layer, including a top surface, a connection surface, and a side surface, the connection surface having a first angle with the top surface and being adjacent to the top surface to be formed, the side surface having a second angle with the connection surface and being adjacent to the connection surface to be formed; a second conductive type electrode layer electrically connected to the second conductive type semiconductor layer and located on at least a part of the top surface of the second conductive type semiconductor layer; and a passivation layer surrounding at least a part of the semiconductor light-emitting device.

[0022] According to the present invention, there is provided a display device, wherein the display device further includes an upper wiring connected to at least a part of the second conductive type electrode layer, at least a part of the passivation layer includes a first corresponding region surrounding the connection surface of the second conductive type semiconductor layer, the first corresponding region is formed corresponding to the shape of the surrounded connection surface, and at least a part of the upper wiring includes a second corresponding region formed on at least a part of the passivation layer, the second corresponding region is formed corresponding to the shape of the surrounded connection surface.

[0023] According to the present invention, there is provided a display device, wherein the connection surface includes n surfaces, and the n surfaces are each formed to have an inclination less than 180 degrees with respect to each other and are adjacent.

[0024] According to the present invention, there is provided a display device, wherein the connection surface is a curved surface having a prescribed curvature.

[0025] According to the present invention, there is provided a display device, wherein the semiconductor light-emitting device is a micro Light Emitting Diode (micro LED) having a size in the micron unit.

[0026] According to the present invention, there is provided a method of manufacturing a display device, which includes: forming a semiconductor light-emitting structure on a growth substrate, and etching the upper portion of the semiconductor light-emitting structure; transferring the semiconductor light-emitting structure onto a transfer substrate; forming an electrode layer on the transferred semiconductor light-emitting structure to form a semiconductor light-emitting device; and assembling the semiconductor light-emitting device onto a wiring substrate.

[0027] According to the present invention, there is provided a method of manufacturing a display device, wherein the step of etching the upper portion of the semiconductor light-emitting structure includes: etching the corner portions of the top surface of the semiconductor light-emitting structure; and etching at least a part of the side surface of the semiconductor light-emitting structure.

[0028] According to the present invention, there is provided a method of manufacturing a display device, wherein the step of etching the corner portions of the top surface of the semiconductor light-emitting structure includes: performing a first etching on at least a part of the upper portion of the semiconductor light-emitting structure at a first etching rate; and performing a second etching on at least a part of the upper portion of the semiconductor light-emitting structure after the first etching at a second etching rate.

[0029] According to the present invention, there is provided a method of manufacturing a display device in which the second etching rate is faster than the first etching rate.

[0030] According to the present invention, there is provided a method of manufacturing a display device, wherein the step of etching at least a part of the side surface of the semiconductor light-emitting structure includes performing a third etching on at least a part of the semiconductor light-emitting structure after the second etching at a third etching rate faster than the second etching rate.

[0031] Advantages of the Invention

[0032] The present invention improves the problem of upper wiring breakage in semiconductor light-emitting devices.

[0033] The present invention enables the connection between semiconductor light-emitting devices to be uniform in semiconductor light-emitting devices.

[0034] The present invention can provide a display device with a high lighting rate.

[0035] The present invention can reduce the variation in brightness of a plurality of semiconductor light-emitting devices.

[0036] The present invention can reduce the friction rate between the substrate and the semiconductor light-emitting device.

[0037] The present invention can improve the transfer speed when manufacturing vertical semiconductor light-emitting devices.

[0038] The effects obtainable from the present invention are not limited to the effects mentioned above, and based on the following detailed description, those of ordinary skill in the art can clearly deduce and understand other effects not mentioned. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The drawings included as part of the detailed description to understand the present invention provide various embodiments and, together with the detailed description, explain the technical features of the various embodiments.

[0040] Figure 1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light-emitting device of the present invention.

[0041] Figure 2 is Figure 1 a partial enlarged view of part A of

[0042] Figure 3a and Figure 3b are cross-sectional views taken along line B-B and line C-C in Figure 2

[0043] Figure 4 is a conceptual diagram showing a flip-chip type semiconductor light-emitting device in FIG. 3.

[0044] Figures 5a to 5c is a conceptual diagram showing various forms of realizing colors related to a flip-chip type semiconductor light-emitting device.

[0045] Figure 6 is a cross-sectional view showing a manufacturing method of a display device using a semiconductor light-emitting device of the present invention.

[0046] Figure 7 is a perspective view showing another embodiment of a display device using a semiconductor light-emitting device of the present invention.

[0047] Figure 8 is along Figure 7 a cross-sectional view taken along line D-D in

[0048] Figure 9 is showing Figure 8 a vertical type semiconductor light-emitting device in

[0049] Figure 10 is a flowchart schematically showing a manufacturing method of a display device using a semiconductor light-emitting device.

[0050] Figure 11 is a diagram showing an embodiment of a method of assembling a semiconductor light-emitting device on a substrate by a self-assembly process.

[0051] Figure 12 is an enlarged Figure 11 view of part E of​

[0052] Figure 13 It is a diagram for explaining a wiring process of a semiconductor light-emitting device according to an embodiment.

[0053] Figure 14 It is a diagram schematically showing a semiconductor light-emitting device according to an embodiment.

[0054] Figure 15 It is a diagram schematically showing a semiconductor light-emitting device according to an embodiment.

[0055] Figure 16 It is a diagram schematically showing an upper part of a semiconductor light-emitting device according to an embodiment. Figure 17 It is a diagram for explaining a wiring process of a display device according to an embodiment.

[0056] Figure 18 It is a photograph showing a wiring connected to a semiconductor light-emitting device according to an embodiment.

[0057] Figure 19 It is a flowchart of a manufacturing method of a display device according to an embodiment.

[0058] Figure 20 It is for explaining Figure 19 An exemplary flowchart of S101.

[0059] Figure 21 It is for explaining Figure 20 An exemplary flowchart of S203.

[0060] Figure 22 It is schematically showing Figure 21 A semiconductor light-emitting structure in each step of.

[0061] Figure 23 It is a cross-sectional view of a display device according to an embodiment in a front direction.

[0062] Figure 24 It is a cross-sectional view of a display device according to an embodiment in a front direction. Detailed Description

[0063] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings. Regardless of the figure numbers, the same or similar structural elements are given the same reference numerals, and redundant descriptions thereof are omitted. In the following description, the suffixes “module” and “section” of the components used are merely given or mixed for the convenience of writing the specification, and do not have distinct meanings or functions by themselves. In addition, during the process of describing the embodiments disclosed in this specification, when it is determined that a detailed description of the relevant well-known technology will obscure the gist of the embodiments disclosed in this specification, the detailed description of the well-known technology is omitted. In addition, it should be understood that the drawings are provided for the convenience of understanding the embodiments disclosed in this specification, and the technical ideas disclosed in this specification should not be construed as being limited to the drawings.

[0064] Furthermore, although the accompanying drawings are described separately for convenience of explanation, it also falls within the scope of the rights of the present invention for those skilled in the art to implement other embodiments by combining at least two or more of the drawings.

[0065] In addition, it should be understood that when an element such as a layer, region, or substrate is referred to as being “on” another component, it means directly on the other component, or there may be intermediate components therebetween.

[0066] The display device described in this specification encompasses the concept of all display devices that display information in unit pixels or in a collection of unit pixels. Therefore, it is not limited to finished products, and can also be applied to components. For example, a panel equivalent to a component of a digital TV also independently corresponds to the display device in this specification. As finished products, it can include mobile phones, smart phones, laptop computers, digital broadcast terminals, PDAs (personal digital assistants), PMPs (portable multimedia players), navigators, Slate PCs, Tablet PCs, Ultra Books, digital TVs, desktop computers, etc.

[0067] However, it is obvious to those skilled in the art that according to the configurations of the embodiments described in this specification, even for newly developed product forms in the future, any device capable of displaying can be applied.

[0068] In addition, the semiconductor light-emitting devices involved in this specification include the concepts of LEDs, micro LEDs, etc., and can be used interchangeably.

[0069] Figure 1It is a conceptual diagram showing an embodiment of a display device using a semiconductor light-emitting device according to the present invention.

[0070] As Figure 1 shown, the information processed in the control unit (not shown) of the display device 100 can be displayed using a flexible display.

[0071] The flexible display includes, for example, a display that can be bent, or folded, or twisted, or folded, or rolled up by an external force.

[0072] Furthermore, the flexible display can be, for example, a display manufactured on a thin and flexible substrate that can be bent, or folded, or folded, or rolled up like paper while maintaining the display characteristics of an existing flat panel display.

[0073] In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as the first state), the display area of the flexible display becomes flat. In the above first state, in a state bent due to an external force (for example, a state having a finite radius of curvature, hereinafter referred to as the second state), the display area can become a curved surface. As Figure 1 shown, the information displayed in the above second state can be visual information output on the curved surface. Such visual information is achieved by independently controlling the light emission of unit pixels (sub-pixels) arranged in a matrix shape. For example, the unit pixel represents the minimum unit for realizing one color.

[0074] The unit pixel of the flexible display can be realized by a semiconductor light-emitting device. In the present invention, as a kind of semiconductor light-emitting device that converts current into light, a light-emitting diode (LED) is exemplified. Since the light-emitting diode is formed in a small size, it can function as a unit pixel even in the second state.

[0075] Referring to the following drawings, the flexible display realized by using the light-emitting diode will be described in more detail.

[0076] Figure 2 Is Figure 1 A partial enlarged view of part A of.

[0077] Figure 3a And Figure 3b Is a cross-sectional view taken along lines B-B and C-C of. Figure 2 of.

[0078] Figure 4 It is a conceptual diagram showing the flip-chip type semiconductor light-emitting device of FIG. 3.

[0079] Figures 5a to 5c It is a conceptual diagram showing various forms of realizing colors related to a flip-chip type semiconductor light-emitting device.

[0080] As Figure 2 , Figure 3a and Figure 3b shown, as the display device 100 using a semiconductor light-emitting device, a display device 100 using a semiconductor light-emitting device of the passive matrix (PM) method is illustrated. However, the examples described below can also be applied to semiconductor light-emitting devices of the active matrix (AM) method.

[0081] Referring to Figure 2 , Figure 1 the display device 100 shown includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and at least one semiconductor light-emitting device 150.

[0082] The substrate 110 can be a flexible substrate. For example, in order to realize a flexible display device, the substrate 110 can include glass or polyimide (PI). In addition, any insulating and flexible material can be used, such as PEN (Polyethylene Naphthalate) and PET (Polyethylene Terephthalate). Additionally, the substrate 110 can be either a transparent material or an opaque material.

[0083] The substrate 110 can be a wiring substrate for disposing the first electrode 120, so the first electrode 120 can be located on the substrate 110.

[0084] As Figure 3a shown, an insulating layer 160 can be disposed on the substrate 110 provided with the first electrode 120, and an auxiliary electrode 170 can be located on the insulating layer 160. In this case, the state where the insulating layer 160 is laminated on the substrate 110 can be a wiring substrate. More specifically, the insulating layer 160 can be a material having insulation and flexibility, such as polyimide (PI), PET, PEN, etc., and can form a single substrate by being formed integrally with the substrate 110.

[0085] The auxiliary electrode 170, which is an electrode for electrically connecting the first electrode 120 to the semiconductor light-emitting device 150, is located on the insulating layer 160 and is arranged corresponding to the position of the first electrode 120. For example, the auxiliary electrode 170 is in the shape of a dot and can be electrically connected to the first electrode 120 through the electrode hole 171 penetrating the insulating layer 160. The electrode hole 171 can be formed by filling a conductive material in the via hole.

[0086] As Figure 2 or Figure 3a shown, although the conductive adhesive layer 130 is formed on one side of the insulating layer 160, the present invention is not limited thereto. For example, a layer performing a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or in the case where there is no insulating layer 160, the conductive adhesive layer 130 is arranged on the substrate 110. In the structure where the conductive adhesive layer 130 is arranged on the substrate 110, the conductive adhesive layer 130 can function as an insulating layer.

[0087] The conductive adhesive layer 130 can be a layer having adhesiveness and conductivity. For this purpose, a conductive substance and an adhesive substance can be mixed in the conductive adhesive layer 130. In addition, since the conductive adhesive layer 130 has ductility, a flexible function can be realized in the display device.

[0088] As such an example, the conductive adhesive layer 130 can be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, etc. The conductive adhesive layer 130 can be configured to allow electrical connection to each other in the Z direction penetrating the thickness and have electrical insulation in the horizontal X-Y direction. Therefore, the conductive adhesive layer 130 can be named a Z-axis conductive layer (however, hereinafter referred to as "conductive adhesive layer").

[0089] The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed in an insulating base material. If heat and pressure are applied, only a specific part has conductivity due to the anisotropic conductive medium. Hereinafter, although the state of applying heat and pressure to the anisotropic conductive film will be described, in order to make a part of the anisotropic conductive film conductive, other methods can also be applied. For example, the above other methods can be applying only one of the heat and pressure or UV curing, etc.

[0090] In addition, for example, the anisotropic conductive medium may be a conductive sphere or a conductive particle. For example, in the form of a film where the anisotropic conductive film is mixed as conductive spheres in an insulating substrate material, if heat and pressure are applied, only specific parts will have conductivity due to the conductive spheres. The anisotropic conductive film may be in a state containing a plurality of particles, where the particles are formed by coating the core of a conductive material with an insulating film made of a polymer material. In this case, as the insulating film of the heated and pressurized part is damaged, conductivity is obtained due to the core. At this time, the shape of the core is deformed, and layers that are in contact with each other in the thickness direction of the film can be formed. As a more specific example, heat and pressure are applied to the entire anisotropic conductive film, and due to the height difference of the objects adhered through the anisotropic conductive film, electrical connection in the Z-axis direction is locally formed.

[0091] As another example, the anisotropic conductive film may be in a state containing a plurality of particles, where the particles are formed by coating an insulating core with a conductive material. In this case, the conductive material of the heated and pressurized part is deformed (pressed and adhered), and has conductivity in the thickness direction of the film. As another example, it may also be in a form where the conductive material penetrates the insulating substrate material in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

[0092] The anisotropic conductive film may be a fixed array anisotropic conductive film (fixed array ACF) formed in a form where conductive spheres are inserted into one surface of an insulating substrate material. More specifically, the insulating substrate material is formed of a material with adhesiveness, and the conductive spheres are concentratedly arranged at the bottom of the insulating substrate material. If heat and pressure are applied to the substrate material, it will have conductivity in the vertical direction as it deforms together with the conductive spheres.

[0093] However, the present invention is not limited thereto. The anisotropic conductive film may be in a form where conductive spheres are randomly mixed in an insulating substrate material, or in a form where it is composed of a plurality of layers and conductive spheres are arranged in a certain layer (double-ACF), etc.

[0094] The anisotropic conductive paste, as a combined form of a paste and conductive spheres, may be a paste in which conductive spheres are mixed in an insulating and adhesive substrate material. In addition, the solution containing conductive particles may be a solution in a form containing conductive fine particles or nanoparticles.

[0095] Refer again to Figure 3a , the second electrode 140 is located on the insulating layer 160 in a state separated from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located.

[0096] When the auxiliary electrode 170 and the second electrode 140 are located on the insulating layer 160, after the conductive adhesive layer 130 is formed, if heat and pressure are applied to connect the semiconductor light-emitting device 150 in a flip-chip form, the semiconductor light-emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

[0097] Referring to Figure 4 , the semiconductor light-emitting device may be a flip chip type light-emitting device.

[0098] For example, the semiconductor light-emitting device includes: a p-type electrode 156, a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, an active layer 154 formed on the p-type semiconductor layer 155, an n-type semiconductor layer 153 formed on the active layer 154, and an n-type electrode 152 formed on the n-type semiconductor layer 153 and disposed horizontally spaced apart from the p-type electrode 156. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 shown in FIG. 3 through the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

[0099] Referring again to Figure 2 , Figure 3a and Figure 3b , the auxiliary electrode 170 is formed long in one direction so that one auxiliary electrode can be electrically connected to a plurality of semiconductor light-emitting devices 150. For example, the p-type electrodes of the semiconductor light-emitting devices on the left and right with the auxiliary electrode as the center can be electrically connected to one auxiliary electrode.

[0100] More specifically, due to heat and pressure, the semiconductor light-emitting device 150 is pressed into the interior of the conductive adhesive layer 130. As a result, only the portion between the p-type electrode 156 of the semiconductor light-emitting device 150 and the auxiliary electrode 170, and the portion between the n-type electrode 152 of the semiconductor light-emitting device 150 and the second electrode 140 are conductive, while in other portions, since the semiconductor light-emitting device is not pressed in, it is not conductive. In this way, the conductive adhesive layer 130 not only binds the semiconductor light-emitting device 150 to the auxiliary electrode 170 and the semiconductor light-emitting device 150 to the second electrode 140, but also forms an electrical connection.

[0101] In addition, a plurality of semiconductor light-emitting devices 150 constitute a light-emitting device array, and a phosphor layer 180 is formed on the light-emitting device array.

[0102] The light-emitting device array may include a plurality of semiconductor light-emitting devices having different self-luminance values. Each semiconductor light-emitting device 150 forms a unit pixel and is electrically connected to the first electrode 120. For example, there may be a plurality of first electrodes 120. For example, a plurality of semiconductor light-emitting devices may be arranged in a plurality of columns, and the semiconductor light-emitting devices in each column may be electrically connected to any one of the plurality of first electrodes.

[0103] In addition, since a plurality of semiconductor light-emitting devices are connected in a flip-chip form, a plurality of semiconductor light-emitting devices grown on a transparent dielectric substrate can be used. In addition, the plurality of semiconductor light-emitting devices may be nitride semiconductor light-emitting devices, for example. Since the semiconductor light-emitting device 150 has excellent luminance, even a small size can form an individual unit pixel.

[0104] As shown in FIG. 3, a partition wall 190 may be formed between the semiconductor light-emitting devices 150. In this case, the partition wall 190 may serve to separate individual unit pixels from each other and may be formed integrally with the conductive adhesive layer 130. For example, the anisotropic conductive film may be inserted through the semiconductor light-emitting device 150, and the base material of the anisotropic conductive film forms the partition wall.

[0105] In addition, if the base material of the anisotropic conductive film is black, the partition wall 190 may have reflective characteristics and increase the contrast even without an additional black insulator.

[0106] As another example, a reflective partition wall may be additionally provided as the partition wall 190. In this case, depending on the purpose of the display device, the partition wall 190 may include a black or white insulator. In the case of a partition wall using a white insulator, it may have the effect of improving reflectivity, and in the case of a partition wall using a black insulator, it may have reflective characteristics and increase the contrast.

[0107] The phosphor layer 180 may be located on the outer surface of the semiconductor light-emitting device 150. For example, if the semiconductor light-emitting device 150 is a blue semiconductor light-emitting device that emits blue B light, the phosphor layer 180 performs the function of converting the blue B light into the color of the unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 that constitutes a single pixel.

[0108] That is, at the position of the unit pixel constituting red, a red phosphor 181 capable of converting blue light into red R light can be stacked on the blue semiconductor light-emitting device. At the position of the unit pixel constituting green, a green phosphor 182 capable of converting blue light into green G light can be stacked on the blue semiconductor light-emitting device. Additionally, in the part of the unit pixel constituting blue, only the blue semiconductor light-emitting device can be used alone. In this case, the unit pixels of red R, green G, and blue B can form one pixel. More specifically, phosphors of one color can be stacked along each line of the first electrode 120. Therefore, in the first electrode 120, one line can be an electrode for controlling one color. That is, along the second electrode 140, red R, green G, and blue B can be arranged in sequence, thereby enabling the realization of the unit pixel.

[0109] However, the present invention is not limited thereto. Instead of phosphors, the unit pixels of red R, green G, and blue B can be realized by combining the semiconductor light-emitting device 150 and quantum dots (QDs).

[0110] Additionally, in order to improve the contrast, a black matrix 191 can be disposed between the respective phosphor layers. That is, such a black matrix 191 can enhance the contrast between light and dark.

[0111] However, the present invention is not limited thereto, and other structures for realizing blue, red, and green can also be used.

[0112] Refer to Figure 5a , each semiconductor light-emitting device 150 can be a high-output light-emitting device that emits various lights including blue by adding indium (In) and / or aluminum (Al) to gallium nitride (GaN) as the main material.

[0113] In this case, in order to form a unit pixel (sub-pixel), the semiconductor light-emitting devices 150 can be red R, green G, and blue B semiconductor light-emitting devices respectively. For example, the red, green, and blue semiconductor light-emitting devices are alternately arranged, and the unit pixels of red (Red), green (Green), and blue (Blue) based on the red, green, and blue semiconductor light-emitting devices form one pixel (pixel), thereby enabling the realization of full-color display.

[0114] Refer to Figure 5b , the semiconductor light-emitting device 150a can be provided with a white light-emitting device W having a yellow phosphor layer for each device. In this case, in order to form a unit pixel, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 can be provided on the white light-emitting device W. Additionally, on such a white light-emitting device W, the unit pixel can be formed by using color filters that repeat red, green, and blue.

[0115] Refer to Figure 5c Alternatively, it may be a structure in which a red phosphor layer 184, a green phosphor layer 185, and a blue phosphor layer 186 are provided on the ultraviolet light-emitting device 150b. As described above, the semiconductor light-emitting device can be used in the entire range from visible light to ultraviolet light UV, and thus can be extended to a form of a semiconductor light-emitting device that can use ultraviolet light UV as an excitation source for the upper phosphor.

[0116] Referring back to this example, the semiconductor light-emitting device is located on the conductive adhesive layer, thereby forming a unit pixel in the display device. Since the semiconductor light-emitting device has excellent brightness, even a small size can form a separate unit pixel.

[0117] For example, the size of such a single semiconductor light-emitting device 150 can be a side length of 80 μm or less, and it can be a rectangular or square device. If it is rectangular, the size can be 20×80 μm or less.

[0118] In addition, even if a square semiconductor light-emitting device 150 with a side length of 10 μm is used as a unit pixel, sufficient brightness for forming a display device can be exhibited.

[0119] Therefore, taking the case of a rectangular pixel with one side of the unit pixel being 600 μm and the remaining side being 300 μm as an example, the pitch of the semiconductor light-emitting devices is relatively large enough.

[0120] Therefore, in such a case, a flexible display device with high image quality above HD image quality can be realized.

[0121] The display device using the semiconductor light-emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, refer to Figure 6 , and the above manufacturing method will be described.

[0122] Figure 6 It is a cross-sectional view showing a manufacturing method of a display device using a semiconductor light-emitting device of the present invention.

[0123] As Figure 6As shown, first, a conductive adhesive layer 130 is formed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located. The insulating layer 160 is laminated on the wiring substrate 110, and the first electrode 120, the auxiliary electrode 170, and the second electrode 140 are disposed on the wiring substrate. In this case, the first electrode 120 and the second electrode 140 can be disposed in directions perpendicular to each other. Additionally, in order to implement a flexible display device, the wiring substrate 110 and the insulating layer 160 can each include glass or polyimide (PI).

[0124] For example, the conductive adhesive layer 130 can be implemented by an anisotropic conductive film. To this end, the anisotropic conductive film can be coated on the substrate where the insulating layer 160 is located.

[0125] Then, the temporary substrate 112 provided with a plurality of semiconductor light-emitting devices 150 is disposed such that the semiconductor light-emitting devices 150 face the auxiliary electrode 170 and the second electrode 140, where the plurality of semiconductor light-emitting devices 150 constitute individual pixels and correspond to the positions of the auxiliary electrode 170 and the second electrode 140.

[0126] In this case, the temporary substrate 112, as a growth substrate on which the semiconductor light-emitting devices 150 grow, can be a sapphire substrate or a silicon substrate.

[0127] When the semiconductor light-emitting devices are formed in wafer units, they are made to have intervals and dimensions capable of forming a display device, thereby enabling effective utilization in the display device.

[0128] Then, the wiring substrate and the temporary substrate 112 are thermocompression bonded. For example, the wiring substrate and the temporary substrate 112 can be thermocompression bonded by using an ACF head. Through the above thermocompression bonding, the wiring substrate and the temporary substrate 112 are bonded. Due to the characteristics of the conductive anisotropic conductive film through thermocompression bonding, only the portions between the semiconductor light-emitting devices 150 and the auxiliary electrode 170 and between the semiconductor light-emitting devices 150 and the second electrode 140 are conductive. Thus, the electrodes and the semiconductor light-emitting devices 150 can be electrically connected. At this time, the semiconductor light-emitting devices 150 are inserted into the interior of the anisotropic conductive film, thereby enabling the formation of partition walls between the semiconductor light-emitting devices 150.

[0129] Then, the temporary substrate 112 is removed. For example, the temporary substrate 112 can be removed by using the Laser Lift-off (LLO) method or the Chemical Lift-off (CLO) method.

[0130] Finally, the semiconductor light-emitting device 150 is exposed to the outside by removing the temporary substrate 112. If necessary, silicon oxide (SiOx) or the like may be coated on the wiring substrate to which the semiconductor light-emitting device 150 is bonded to form a transparent insulating layer (not shown).

[0131] In addition, it may further include a step of forming a phosphor layer on one surface of the semiconductor light-emitting device 150. For example, if the semiconductor light-emitting device 150 is a blue semiconductor light-emitting device that emits blue B light, a red phosphor or a green phosphor for converting such blue B light into the color of a unit pixel may be formed as a layer on one surface of the blue semiconductor light-emitting device.

[0132] The manufacturing method or structure of the display device using the semiconductor light-emitting device described above can be changed in various ways. For example, in the display device described above, a vertical semiconductor light-emitting device may also be applicable.

[0133] In addition, in the following modification examples or embodiments, the same or similar components as those in the foregoing embodiments are given the same or similar reference numerals, and the description of the same or similar components follows the foregoing description.

[0134] Figure 7 FIG. is a perspective view showing another embodiment of the display device using the semiconductor light-emitting device of the present invention. Figure 8 is along Figure 7 a cross-sectional view taken along line D-D of Figure 9 is a diagram showing Figure 8 a conceptual diagram of the vertical semiconductor light-emitting device of

[0135] Referring to this drawing, the display device may be a display device using a vertical semiconductor light-emitting device in a passive matrix (PM) method.

[0136] The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and at least one semiconductor light-emitting device 250.

[0137] The substrate 210 is a wiring substrate on which the first electrode 220 is disposed, and may include polyimide (PI) in order to implement a flexible display device. In addition to this, any material having insulation and flexibility may be used.

[0138] The first electrode 220 is located on the substrate 210 and may be formed as an electrode in a bar shape that extends in one direction. The first electrode 220 may be configured to function as a data electrode.

[0139] A conductive adhesive layer 230 is formed on the substrate 210 where the first electrode 220 is located. Similar to a display device using a flip chip type light emitting device, the conductive adhesive layer 230 can be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, etc. However, in this embodiment, the case where the conductive adhesive layer 230 is realized by an anisotropic conductive film is also illustrated.

[0140] In a state where the first electrode 220 is located on the substrate 210, after an anisotropic conductive film is provided, the semiconductor light emitting device 250 is connected by applying heat and pressure, and the semiconductor light emitting device 250 is electrically connected to the first electrode 220. At this time, the semiconductor light emitting device 250 is preferably arranged to be located on the first electrode 220.

[0141] As described above, the above electrical connection is generated because, if heat and pressure are applied to the anisotropic conductive film, it has conductivity locally in the thickness direction. Therefore, the anisotropic conductive film is divided in the thickness direction into a conductive part and a non-conductive part.

[0142] In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 not only realizes the electrical connection between the semiconductor light emitting device 250 and the first electrode 220, but also realizes mechanical bonding.

[0143] As described above, the semiconductor light emitting device 250 is located on the conductive adhesive layer 230, thereby constituting a separate pixel in the display device. Since the semiconductor light emitting device 250 has excellent brightness, even a small size can constitute a separate unit pixel. For example, the size of such a separate semiconductor light emitting device 250 can be a length of one side of 80 μm or less, and it can be a rectangular or square device. In the case of a rectangle, for example, it can be a size of 20×80 μm or less.

[0144] The semiconductor light emitting device 250 can have a vertical structure.

[0145] A plurality of second electrodes 240 are provided between the vertical semiconductor light emitting devices, which are arranged in a direction intersecting the length direction of the first electrode 220 and are electrically connected to the vertical semiconductor light emitting device 250.

[0146] Refer to Figure 9, such a vertical semiconductor light-emitting device 250 includes: a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255, an n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the lower p-type electrode 256 can be electrically connected to the first electrode 220 through a conductive adhesive layer 230, and the upper n-type electrode 252 can be electrically connected to a second electrode 240 described later. Such a vertical semiconductor light-emitting device 250 can arrange electrodes vertically and horizontally, so it has a great advantage of being able to reduce the chip size.

[0147] Referring again to Figure 8 , a phosphor layer 280 can be formed on one surface of the semiconductor light-emitting device 250. For example, if the semiconductor light-emitting device 250 is a blue semiconductor light-emitting device 251 that emits blue B light, a phosphor layer 280 can be provided to convert such blue B light into the color of a unit pixel. In this case, the phosphor layer 280 can be a red phosphor 281 and a green phosphor 282 that constitute a single pixel.

[0148] That is, at the position of the unit pixel that constitutes red, a red phosphor 281 capable of converting blue light into red R light can be stacked on the blue semiconductor light-emitting device, and at the position of the unit pixel that constitutes green, a green phosphor 282 capable of converting blue light into green G light can be stacked on the blue semiconductor light-emitting device. In addition, in the part of the unit pixel that constitutes blue, only the blue semiconductor light-emitting device can be used alone. In this case, the unit pixels of red R, green G, and blue B can form one pixel.

[0149] However, the present invention is not limited to this. As described above, in a display device using a flip chip type light-emitting device, other structures for realizing blue, red, and green can be used.

[0150] Referring to this embodiment again, the second electrode 240 is located between the semiconductor light-emitting devices 250 and is electrically connected to the semiconductor light-emitting devices 250. For example, the semiconductor light-emitting devices 250 can be arranged in a plurality of columns, and the second electrode 240 is located between the columns of the semiconductor light-emitting devices 250.

[0151] Since the distance between the semiconductor light-emitting devices 250 that constitute a single pixel is large enough, the second electrode 240 can be located between the semiconductor light-emitting devices 250.

[0152] The second electrode 240 can be formed into a bar-shaped electrode that is long in one direction and can be arranged in a direction perpendicular to the first electrode.

[0153] In addition, the second electrode 240 and the semiconductor light-emitting device 250 can be electrically connected through a connection electrode protruding from the second electrode 240. More specifically, the connection electrode can be an n-type electrode of the semiconductor light-emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or deposition. Thus, the second electrode 240 and the n-type electrode of the semiconductor light-emitting device 250 can be electrically connected.

[0154] Refer again to Figure 8 , the second electrode 240 can be located on the conductive adhesive layer 230. Depending on the situation, a transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like can be formed on the substrate 210 on which the semiconductor light-emitting device 250 is formed. In the case where the second electrode 240 is to be provided after the transparent insulating layer is formed, the second electrode 240 can be located on the transparent insulating layer. In addition, the second electrode 240 can also be formed at a distance from the conductive adhesive layer 230 or the transparent insulating layer.

[0155] If a transparent electrode such as ITO (Indium Tin Oxide) is used to provide the second electrode 240 on the semiconductor light-emitting device 250, there is a problem of poor adhesion between the ITO material and the n-type semiconductor layer. Therefore, in the present invention, the second electrode 240 is provided between the semiconductor light-emitting devices 250, so that there is an advantage that a transparent electrode such as ITO does not need to be used. Therefore, without being limited to selecting a transparent material, a conductive material having good adhesion to the n-type semiconductor layer can be used as a horizontal electrode, thereby improving the light extraction efficiency.

[0156] Refer again to Figure 8 , the partition wall 290 can be located between the semiconductor light-emitting devices 250. That is, in order to separate the semiconductor light-emitting devices 250 constituting individual pixels, the partition wall 290 can be disposed between the vertical semiconductor light-emitting devices 250. In this case, the partition wall 290 can function to separate individual unit pixels and can be formed integrally with the conductive adhesive layer 230. For example, the semiconductor light-emitting device 250 can be inserted into the anisotropic conductive film, and the base material of the anisotropic conductive film forms the partition wall 290.

[0157] In addition, if the base material of the anisotropic conductive film is black, then even without an additional black insulator, the partition wall 290 can have reflection characteristics while increasing the contrast.

[0158] As another example, as the partition wall 190, an additional reflective partition wall may be provided. Depending on the purpose of the display device, the partition wall 290 may include a black or white insulator.

[0159] If, when the second electrode 240 is exactly on the conductive adhesive layer 230 between the semiconductor light-emitting devices 250, the partition wall 290 may be located between the vertical semiconductor light-emitting devices 250 and the second electrode 240. Therefore, the semiconductor light-emitting devices 250 can be used to form individual unit pixels in a small size. Since the pitch of the semiconductor light-emitting devices 250 is relatively wide enough, the second electrode 240 can be located between the semiconductor light-emitting devices 250, achieving the effect of realizing a flexible display device with HD picture quality.

[0160] In addition, as Figure 8 shown, in order to improve the contrast, a black matrix 291 may be arranged between the respective phosphors. That is, such a black matrix 291 can improve the contrast between light and dark.

[0161] Figure 10 is a diagram schematically showing a manufacturing method of a display device using semiconductor light-emitting devices.

[0162] First, a plurality of semiconductor light-emitting devices are formed on a growth substrate (S1010). The plurality of semiconductor light-emitting devices may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. In addition, it may further include a first conductive type electrode formed on the first conductive type semiconductor layer and a second conductive type electrode formed on the second conductive type semiconductor layer.

[0163] The semiconductor light-emitting devices may be horizontal semiconductor light-emitting devices or vertical semiconductor light-emitting devices. However, in the case of vertical semiconductor light-emitting devices, the first conductive type electrode and the second conductive type electrode are structures facing each other, so a process of separating the semiconductor light-emitting devices from the growth substrate and forming a conductive type electrode in any direction in subsequent processes is added. In addition, for the self-assembly process, a magnetic layer may be included in the semiconductor light-emitting devices, which will be described later.

[0164] In order to use a plurality of the semiconductor light-emitting devices in a display device, generally three semiconductor light-emitting devices that emit colors corresponding to red (R), green (G), and blue (B) are required. Since semiconductor light-emitting devices that emit one color are formed on one growth substrate, in order to implement a display device with a single unit pixel using the three semiconductor light-emitting devices, an additional substrate is required. Therefore, each of the plurality of semiconductor light-emitting devices needs to be separated from the growth substrate and assembled or transferred to a final substrate. The final substrate is a substrate on which a wiring electrode forming process is performed, and the wiring electrode applies a voltage to the semiconductor light-emitting device to enable the semiconductor light-emitting device to emit light.

[0165] Therefore, a plurality of semiconductor light-emitting devices that emit different colors of light can first move to a transfer substrate or an assembly substrate (S1020), and then be transferred to a final substrate. Depending on the situation, when a wiring process is directly performed on the transfer substrate or the assembly substrate, the transfer substrate or the assembly substrate functions as a final substrate.

[0166] The method of disposing the semiconductor light-emitting device on the transfer substrate or the assembly substrate (S1020) can be roughly divided into three types.

[0167] First, a method (S1021) of moving the semiconductor light-emitting device from the growth substrate to the transfer substrate using an imprint process. The imprint process refers to a process of separating the semiconductor light-emitting device from the growth substrate through the protrusions by using a substrate of a flexible material provided with protrusions having adhesiveness. The semiconductor light-emitting devices on the growth substrate can be selectively separated by adjusting the interval and configuration of the protrusions.

[0168] Second, a method (S1022) of assembling the semiconductor light-emitting device to the assembly substrate using a self-assembly process. For the self-assembly process, it is necessary to separate the semiconductor light-emitting device from the growth substrate so that it exists independently, and separate a required number of semiconductor light-emitting devices from the growth substrate through a laser lift-off (LLO) process or the like. Then, the plurality of semiconductor light-emitting devices are dispersed in a fluid, and are assembled to the assembly substrate using an electromagnetic field.

[0169] The self-assembly process can assemble the respective semiconductor light-emitting devices that implement R, G, and B colors on one assembly substrate at the same time, or assemble a single-color semiconductor light-emitting device through a separate assembly substrate.

[0170] Third, it is a method (S1023) of hybridly using the imprinting process and the self-assembly process. First, after arranging a plurality of semiconductor light-emitting devices on an assembly substrate through the self-assembly process, the plurality of semiconductor light-emitting devices are moved to a final substrate by the imprinting process. In the case of the assembly substrate, since it is difficult to achieve a large area during the self-assembly process due to factors such as the position of the arranged assembly substrate, contact with the fluid, and influence of the electromagnetic field, after assembling a plurality of semiconductor light-emitting devices using an assembly substrate of an appropriate area, the process of transferring to a large-area final substrate can be performed multiple times by the imprinting process.

[0171] If a plurality of semiconductor light-emitting devices that constitute individual unit pixels are arranged on the final substrate, a wiring process (S1030) for electrically connecting the plurality of semiconductor light-emitting devices is performed.

[0172] The wiring electrodes formed through the wiring process electrically connect the plurality of semiconductor light-emitting devices assembled or transferred to the substrate to the substrate. In addition, transistors for active matrix driving may be formed below the substrate. Therefore, the wiring electrodes can be electrically connected to the transistors.

[0173] On the other hand, for a large-area display device, a large number of semiconductor light-emitting devices are required, so the self-assembly process is preferred. Further, in order to improve the assembly speed, in the self-assembly process, it may be more inclined to simultaneously assemble semiconductor light-emitting devices of different colors on one assembly substrate. In addition, in order to assemble semiconductor light-emitting devices of different colors to preset specific positions on the assembly substrate, a structure with mutual exclusivity may be required.

[0174] Figure 11 FIG. is a diagram showing an embodiment of a method of assembling a semiconductor light-emitting device on a substrate through a self-assembly process.

[0175] Figure 12 is an enlarged Figure 11 diagram of part E.

[0176] Referring to Figure 11 and Figure 12 , the semiconductor light-emitting device 1150 can be put into the chamber 1130 filled with the fluid 1120.

[0177] Then, the assembly substrate 1110 can be arranged on the chamber 1130. According to the embodiment, the assembly substrate 1110 can also be put into the chamber 1130. At this time, the insertion direction of the assembly substrate 1110 is the direction in which the assembly groove 1111 of the assembly substrate 1110 faces the fluid 1120.

[0178] On the assembly substrate 1110, a pair of electrodes 1112 and 1113 corresponding to the semiconductor light-emitting device 1150 to be assembled can be formed. The electrodes 1112 and 1113 can be implemented as transparent electrodes (ITO), or other common materials can be used. The electrodes 1112 and 1113 are equivalent to generating an electric field when a voltage is applied, so as to stably fix the assembly electrodes of the semiconductor light-emitting device 1150 in contact with the assembly grooves 1112 and 1113.

[0179] Specifically, an alternating voltage can be applied to the electrodes 1112 and 1113, and the semiconductor light-emitting device 1150 floating in the peripheral part of the electrodes 1112 and 1113 can have polarity through dielectrophoresis. In addition, the dielectrophoresed semiconductor light-emitting device can move or be fixed in a specific direction under the action of the non-uniform electric field formed in the peripheral part of the electrodes 1112 and 1113. This situation is called dielectrophoresis (DEP), and the self-assembly process of the present invention can use the dielectrophoresis to stably fix the semiconductor light-emitting device 1150 in the assembly groove 1111. Since the intensity of the dielectrophoresis (dielectrophoresis force; DEP force) is proportional to the intensity of the electric field, it is different according to the degree of dielectrophoresis in the semiconductor light-emitting device.

[0180] In addition, for example, the interval between the assembly electrodes 1112 and 1113 is formed to be smaller than the width of the semiconductor light-emitting device 1150 and the diameter of the assembly groove 1111, so that the assembly position of the semiconductor light-emitting device 1150 using the electric field can be fixed more precisely.

[0181] In addition, an insulating layer 1114 is formed on the assembly electrodes 1112 and 1113. The insulating layer protects the electrodes 1112 and 1113 from the fluid 1120 and can prevent the leakage of the current flowing through the assembly electrodes 1112 and 1113. For example, the insulating layer 1114 can be formed of an inorganic insulator or an organic insulator such as a single layer or multiple layers of silicon dioxide, aluminum oxide, etc. In addition, the insulating layer 1114 can have a minimum thickness that prevents the assembly electrodes 1112 and 1113 from being damaged when assembling the semiconductor light-emitting device 1150, and can have a maximum thickness for stably assembling the semiconductor light-emitting device 1150.

[0182] A partition wall 1115 can be formed on the upper part of the insulating layer 1114. A part of the area of the partition wall 1115 can be located above the assembly electrodes 1112 and 1113, and another part of the area can be located above the assembly substrate 1110.

[0183] For example, when manufacturing the assembly substrate 1110, an assembly groove 1111 for each semiconductor light-emitting device 1150 to be coupled to the assembly substrate 1110 can be formed by removing a part of the partition wall integrally formed on the upper portion of the insulating layer 1114.

[0184] As Figure 12 shown, an assembly groove 1111 for coupling the semiconductor light-emitting device 1150 is formed in the assembly substrate 1110, and the surface on which the assembly groove 1111 is formed can be in contact with the fluid 1120. The assembly groove 1111 can guide the accurate assembly position of the semiconductor light-emitting device 1150.

[0185] In addition, the partition wall 1115 can be formed to have a predetermined inclination from the opening of the assembly groove 1111 toward the bottom surface. For example, by adjusting the inclination of the partition wall 1115, the assembly groove 1111 has an opening and a bottom surface, and the area of the opening can be formed to be larger than the area of the bottom surface. Thus, the semiconductor light-emitting device 1150 can be assembled to the accurate position on the inner bottom surface of the assembly groove 1111.

[0186] On the other hand, the assembly groove 1111 can have a shape and size corresponding to the shape of the assembled semiconductor light-emitting device 1150. Thus, it is possible to prevent other semiconductor light-emitting devices from being assembled into the assembly groove 1111 or a plurality of semiconductor light-emitting devices from being assembled into the assembly groove 1111.

[0187] In addition, the depth of the assembly groove 1111 can be formed to be less than the vertical height of the semiconductor light-emitting device 1150. By this, the semiconductor light-emitting device 1150 can have a structure protruding from between the partition walls 1115, and can easily come into contact with the protruding portion of the transfer substrate during the transfer process that may occur after assembly.

[0188] In addition, as Figure 12 shown, after the assembly substrate 1110 is disposed, the assembly device 1140 including a magnet can move along the assembly substrate 1110. In order to maximize the area affected by the magnetic field in the fluid 1120, the assembly device 1140 can move in a state of being in contact with the assembly substrate 1110. For example, the assembly device 1140 can include a plurality of magnets, or can include a magnet having a size corresponding to the assembly substrate 1110. In this case, the moving distance of the assembly device 1140 can also be limited within a specified range.

[0189] Under the action of the magnetic field generated by using the assembly device 1140, the semiconductor light-emitting device 1150 in the chamber 1130 can move toward the assembly device 1140.

[0190] When the semiconductor light-emitting device 1150 moves toward the assembly device 1140, it can be asFigure 12 enter the assembly groove 1111 as shown and come into contact with the assembly substrate 1110.

[0191] In addition, a magnetic layer may be included inside the semiconductor light-emitting device so that the semiconductor light-emitting device 1150 can perform a self-assembly process.

[0192] On the other hand, under the action of the electric field generated by the assembly electrodes 1112 and 1113 of the assembly substrate 1110, it is possible to prevent the semiconductor light-emitting device 1150 in contact with the assembly substrate 1110 from detaching due to the movement of the assembly device 1140.

[0193] Therefore, a plurality of semiconductor light-emitting devices 1150 are assembled onto the assembly substrate 1110 simultaneously and in parallel by Figure 11 and Figure 12 the self-assembly method using an electromagnetic field as shown.

[0194] The display device 2000 of the embodiment can be manufactured by, for example, assembling a semiconductor light-emitting device and a substrate as described in Figures 10 to 12 . To reduce the cost of manufacturing a display device and improve the mass production efficiency, miniaturization of the semiconductor light-emitting devices included in the display device is required. For this purpose, the semiconductor light-emitting device 2100 of the embodiment can be, for example, a micro LED (micro Light Emitting Diode) having a unit of micron size. For example, as described in Figures 1 to 9 , such a semiconductor light-emitting device can be formed as a vertical semiconductor light-emitting device.

[0195] On the other hand, in the case of a horizontal semiconductor light-emitting device, conductive electrodes connected to respective conductive semiconductor layers are all formed on one surface of the element, so the manufacturing process is relatively easy. However, in a growth substrate of the same area, the number of manufacturable horizontal semiconductor light-emitting devices is less than that of vertical semiconductor light-emitting devices. Therefore, in a display device using more than millions of semiconductor light-emitting devices, from the perspective of manufacturing cost, it is more advantageous to use vertical semiconductor light-emitting devices.

[0196] Therefore, hereinafter, as such a Figures 1 to 9 semiconductor light-emitting device described in

[0197] Figure 13 For example, a vertical semiconductor light-emitting device will be described.

[0198] In Figure 13 , the content of assembling a semiconductor light-emitting device manufactured by the method described in Figures 1 to 9 onto a substrate and connecting wirings will be described.

[0199] In Figure 13 , 2000 represents a display device (e.g., the display device described in Figures 1 to 12 ). Additionally, in Figure 13 , 2100 represents a semiconductor light-emitting device (e.g., the semiconductor light-emitting device 150, vertical semiconductor light-emitting device 250, and Figures 1 to 9 the semiconductor light-emitting device 1150 described in Figures 10 to 12 ).

[0200] For example, the semiconductor light-emitting device 2100 is a vertical semiconductor light-emitting device. The semiconductor light-emitting device 2100 electrically connects a first conductivity type electrode layer 2110 (refer to Figure 14 ) and a second conductivity type electrode layer 2150 (refer to Figure 14 ) to emit light. To this end, the display device 2000 performs a wiring 2300 process on the second conductivity type electrode layer 2150 located above the semiconductor light-emitting device 2100.

[0201] The display device 2000 includes an upper wiring 2400, which is combined with the semiconductor light-emitting device 2100 and can light up the semiconductor light-emitting device 2100 by being electrically connected to the semiconductor light-emitting device 2100. The upper wiring 2400 can be electrically connected to a conductivity type electrode layer provided at one end of the semiconductor light-emitting device 2100.

[0202] On the other hand, there is a problem that it is difficult to connect the first conductivity type electrode layer 2110 and the second conductivity type electrode layer 2150 as the size of the semiconductor light-emitting device 2100 becomes smaller. Additionally, due to process differences between blue (B), green (G), and red (R) semiconductor light-emitting devices, the RGB semiconductor light-emitting devices may have different heights from each other. Also, due to the layer stacking thickness differences of each layer, the plurality of semiconductor light-emitting devices of the semiconductor light-emitting device 2100 may have different heights from each other.

[0203] Figure 13 (a) of Figure 13 shows a case where the height of the semiconductor light-emitting device 2100 is relatively high. Additionally,

[0204] As Figure 13 shown, the semiconductor light-emitting device 2100 is disposed on a wiring substrate 2200. The display device 2000 includes an organic film 2300 coated between the semiconductor light-emitting devices 2100.

[0205] In order to connect the semiconductor light-emitting device 2100 to the upper wiring 2400, the upper part of the display device 2000 is etched. That is, the upper parts of the semiconductor light-emitting device 2100 and the organic film 2300 are ashed.

[0206] At this time, when the height of the semiconductor light-emitting device 2100 is relatively high as shown in (a) of Figure 13 , at least a part of the passivation layer 2170 surrounding the outer surface of the semiconductor light-emitting device 2100 is also exposed from the semiconductor light-emitting device 2100. The passivation layer 2170 is formed to be higher than the organic film layer 2300. On the other hand, when the height of the semiconductor light-emitting device 2100 is relatively low as shown in (b) of Figure 13 , less of the passivation layer 2170 of the semiconductor light-emitting device 2100 is exposed. The passivation layer 2170 is formed to have the same or a similar height as the organic film layer 2300. That is, depending on the height difference of the semiconductor light-emitting device 2100, after the etching process, the height difference between the passivation layer 2170 and the organic film layer 2300 of the display device 2000 is formed differently.

[0207] The display device 2100 includes an upper wiring 2400 deposited on the upper part of the semiconductor light-emitting device 2100. The semiconductor light-emitting device 2100 is electrically connected through the upper wiring 2400 to emit light.

[0208] At this time, if the height of the semiconductor light-emitting device 2100 is relatively high as shown in (a) of Figure 13 , a step will be formed between the upper part of the semiconductor light-emitting device 2100 and the organic film layer 2300. In this case, as shown by A in (a) of Figure 13 , there is a problem that the upper wiring 2400 deposited on the semiconductor light-emitting device 2100 is broken. Or, there is a problem that the upper wiring 2400 is likely to be broken. On the other hand, when the height of the semiconductor light-emitting device 2100 is relatively low as shown in (b) of Figure 13 , there is no step or a very small step is formed between the upper part of the semiconductor light-emitting device 2100 and the organic film layer 2300. In this case, as shown by B in (b) of Figure 13 , the upper wiring 2400 deposited on the semiconductor light-emitting device 2100 is not broken.

[0209] As described above, depending on the height difference of the plurality of semiconductor light-emitting devices 2100, the upper wiring 2400 of the display device 2000 may be broken, or may be likely to be broken, or may not be broken. That is, there may be a problem that a part of the display device 2000 is not lit or emits light weakly. In addition, in this case, the display device 2000 may also have problems such as uneven brightness when lit and a large variation in brightness.

[0210] Therefore, hereinafter, a solution for miniaturizing the semiconductor light-emitting device 2100 and improving the disconnection problem of the wiring connected to the semiconductor light-emitting device 2100 will be described in detail.

[0211] Figure 14 It is a diagram schematically showing a semiconductor light-emitting device of an embodiment.

[0212] For example, the semiconductor light-emitting device 2100 of the embodiment is a vertical semiconductor light-emitting device. Additionally, for example, the semiconductor light-emitting device 2100 is a circular light-emitting device, for example, a concentric circle type light-emitting device. However, the shape of the semiconductor light-emitting device 2100 is not limited thereto.

[0213] The semiconductor light-emitting device 2100 includes a first conductive type electrode layer 2110, a first conductive type semiconductor layer 2120, an active layer 2130, a second conductive type semiconductor layer 2140, and a second conductive type electrode layer 2150. Additionally, the semiconductor light-emitting device 2100 further includes a conductive adhesive layer 2160. The semiconductor light-emitting device 2100 may further include a passivation layer 2170 (refer to Figure 19 ), but for the sake of simplicity of explanation, Figure 14 the passivation layer 2170 is omitted in

[0214] The first conductive type electrode layer 2110 includes an electrical and / or magnetic material. For example, the first conductive type electrode layer 2110 is an n-type metal electrode layer.

[0215] The first conductive type semiconductor layer 2120 is electrically connected to the first conductive type electrode layer 2110. The first conductive type semiconductor layer 2120 is located on the first conductive type electrode layer 2110. That is, the first conductive type electrode layer 2110 is deposited on at least a part of the first conductive type semiconductor layer 2120. For example, the first conductive type semiconductor layer 2120 is an n-type semiconductor layer. For example, the first conductive type semiconductor layer 2120 is n-GaN.

[0216] The active layer 2130 generates light.

[0217] The second conductive type semiconductor layer 2140 is located on the active layer 2130. For example, the second conductive type semiconductor layer 2140 is a p-type semiconductor layer. For example, the second conductive type semiconductor layer 2140 is p-GaN.

[0218] The second-conductivity-type electrode layer 2150 is electrically connected to the second-conductivity-type semiconductor layer 2140. The second-conductivity-type electrode layer 2150 is located on at least a part of the top surface of the second-conductivity-type semiconductor layer 2140. For example, the second-conductivity-type electrode layer 2150 is a p-type electrode layer. For example, the second-conductivity-type electrode layer 2150 includes a transparent material. For example, the second-conductivity-type electrode layer 2150 includes ITO, FTO. Through this, the semiconductor light-emitting device 2100 emits the light generated from the active layer 2130 to the outside through the second-conductivity-type semiconductor layer 2140 and / or the second-conductivity-type electrode layer 2150.

[0219] The conductive adhesive layer 2160 is connected to the first-conductivity-type electrode layer 2110. When the semiconductor light-emitting device 2100 is assembled on the wiring substrate 2200, the conductive adhesive layer 2160 connects the semiconductor light-emitting device 2100 and the wiring substrate 2200. For example, the conductive adhesive layer 2160 is an n-type adhesive metal layer. For example, the conductive adhesive layer 2160 includes Ti, Cr. Through this, the conductive adhesive layer 2160 can further increase the force of the magnetic layer included in the first-conductivity-type electrode layer 2110.

[0220] On the other hand, the second-conductivity-type semiconductor layer 2140 includes a top surface 2140u, a side surface 2140s, and a connection surface 2140c formed between the top surface 2140 and the side surface 2140s.

[0221] The top surface 2140u of the second-conductivity-type semiconductor layer is connected to the second-conductivity-type electrode layer 2150. The side surface 2140s of the second-conductivity-type semiconductor layer forms the outer surface of the semiconductor light-emitting device 2100 except for the passivation layer 2170.

[0222] The connection surface 2140c of the second-conductivity-type semiconductor layer is formed to form a first angle θ1 with the top surface 2140u of the second-conductivity-type semiconductor layer. The connection surface 2140c of the second-conductivity-type semiconductor layer is formed adjacent to the top surface 2140u of the second-conductivity-type semiconductor layer. In addition, the connection surface 2140c of the second-conductivity-type semiconductor layer is formed to form a second angle θ2 with the side surface 2140s of the second-conductivity-type semiconductor layer. The connection surface 2140c of the second-conductivity-type semiconductor layer is formed adjacent to the side surface 2140s of the second-conductivity-type semiconductor layer.

[0223] At this time, for example, the connection surface 2140c of the second-conductivity-type semiconductor layer can be formed by etching at least a part of the upper corner portion of the second-conductivity-type semiconductor layer 2140. Later, refer to Figures 21 to 24 , and this will be described in detail.

[0224] At this time, the first angle θ1 and the second angle θ2 are greater than 90 degrees and less than 180 degrees. Additionally, the first angle θ1 and the second angle θ2 are greater than 90 degrees. For example, when the top surface 2140u of the second-conductive-type semiconductor layer is horizontal with the ground, the connection surface 2140c of the second-conductive-type semiconductor layer is in a form that slopes downward relative to the ground. Additionally, the side surface 2140s of the second-conductive-type semiconductor layer is in a form that slopes downward more relative to the ground than the connection surface 2140c of the second-conductive-type semiconductor layer.

[0225] That is, in the upper part of the second-conductive-type semiconductor layer 2140, the corner part forms a slow slope along the top surface 2140u, the connection surface 2140c, and the side surface 2140s of the second-conductive-type semiconductor layer.

[0226] On the other hand, when the semiconductor light-emitting device 2100 is formed in a quadrilateral or polygonal type instead of a concentric circle type, the above structure can still be used. In this case, the semiconductor light-emitting device 2100 includes a connection surface (for example, the same as or similar to 2140c) that is all or a part of the corner part located in the upper part of the semiconductor light-emitting device 2100. For example, in the upper part of the semiconductor light-emitting device 2100, the connection surface can be included only on the surface where the upper wiring 2400 is deposited, or the connection surface can be included on all surfaces regardless of the deposition of the upper wiring 2400.

[0227] With such a structure, the semiconductor light-emitting device 2100 of the embodiment also provides a space for depositing the upper wiring 2400 when manufacturing the display device 2000.

[0228] For example, the semiconductor light-emitting device 2100 provides a relatively gentle slope between the top surface 2140u and the side surface 2140s of the second-conductive-type semiconductor layer through the connection surface 2140c of the second-conductive-type semiconductor layer. The connection surface 2140c of the second-conductive-type semiconductor layer increases the deposition contact area of the semiconductor light-emitting device 2100 in the process of depositing the upper wiring 2400. Through this, the semiconductor light-emitting device 2100 of the embodiment enables the upper wiring 2400 to be deposited more stably on the upper part of the semiconductor light-emitting device 2100.

[0229] Thereby, the semiconductor light-emitting device 2100 of the embodiment prevents the upper wiring of the display device 2000 including the light-emitting device 2100 from breaking or becoming fragile. Additionally, thereby, the display device 2000 of the embodiment improves the lighting rate and lighting uniformity when lit, and improves the brightness variation.

[0230] Hereinafter, an example of the upper structure of such a semiconductor light-emitting device 2100 will be further described.

[0231] Figure 15This is a diagram schematically showing a semiconductor light-emitting device according to an embodiment.

[0232] For ease of explanation, Figure 15 only a part of the top surface 2140u of the second-conductive-type semiconductor layer, a part of the connection surface 2140c of the second-conductive-type semiconductor layer, and a part of the side surface 2140s of the second-conductive-type semiconductor layer are shown.

[0233] Figure 15 Example (a) shows that the connection surface 2140c of the second-conductive-type semiconductor layer includes two or more surfaces.

[0234] The connection surface 2140c of the second-conductive-type semiconductor layer includes n surfaces (for example, 2140c1, 2140c2). At this time, n is an integer of 1 or more. Figure 15 The case where n is an integer of 2 or more will be described. The n surfaces (for example, 2140c1, 2140c2) are each formed such that the inclination angles between them are greater than 90 degrees and less than 180 degrees. That is, among the n surfaces included in the top surface 2140u of the second-conductive-type semiconductor layer and the connection surface 2140c of the second-conductive-type semiconductor layer, the surfaces (for example, 2140c1) adjacent to the top surface 2140u form inclination angles greater than 90 degrees and less than 180 degrees with each other. In addition, among the n surfaces included in the side surface 2140s of the second-conductive-type semiconductor layer and the connection surface 2140c of the second-conductive-type semiconductor layer, the surfaces (for example, 2140c2) adjacent to the side surface 2140s form inclination angles greater than 90 degrees and less than 180 degrees with each other.

[0235] For example, as Figure 15 shown in (a), the connection surface 2140c of the second-conductive-type semiconductor layer includes a first connection surface 2140c1 and a second connection surface 2140c2.

[0236] The first connection surface 2140c1 is formed to form a third angle θ3 with the top surface 2140u of the second-conductive-type semiconductor layer. The first connection surface 2140c1 is formed to be adjacent to the top surface 2140u of the second-conductive-type semiconductor layer. In addition, the first connection surface 2140c1 is formed to form a fourth angle θ4 with the second connection surface 2140c2. The first connection surface 2140c1 is formed to be adjacent to the second connection surface 2140c2. The second connection surface 2140c2 is formed to form a fifth angle θ5 with the side surface 2140s of the second-conductive-type semiconductor layer. The second connection surface 2140c2 is formed to be adjacent to the side surface 2140s of the second-conductive-type semiconductor layer.

[0237] At this time, for example, the first connection surface 2140c1 can be formed by etching at least a part of the corner portion of the upper part of the second-conductive-type semiconductor layer 2140. Additionally, for example, the second connection surface 2140c2 can be formed by etching at least a part of the corner portion of the upper part of the second-conductive-type semiconductor layer 2140 whose at least a part of the corner portion has been etched.

[0238] For example, the second connection surface 2140c2 can be formed after first etching the first connection surface 2140c1. Additionally, the second connection surface 2140c2 can be etched at a faster rate than the etching used to form the first connection surface 2140c1. At this time, the etching rate represents the degree of etching per hour.

[0239] As described above, the connection surface 2140 of the second-conductive-type semiconductor layer can also be formed by performing multiple etchings on the corner portion of the upper part of the second-conductive-type semiconductor layer 2140. Later, refer to Figures 19 to 22 for a detailed description of this.

[0240] As Figure 14 shown, the third angle θ3, the fourth angle θ4, and the fifth angle θ5 are all greater than 90 and less than 180 degrees. For example, when the top surface 2140u of the second-conductive-type semiconductor layer is horizontal to the ground, the first connection surface 2140c1 is in a form that slopes downward relative to the ground. Additionally, the second connection surface 2140c2 is in a form that slopes downward more relative to the ground than the first connection surface 2140c1. Additionally, the side surface 2140s of the second-conductive-type semiconductor layer is in a form that slopes downward more relative to the ground than the second connection surface 2140c2.

[0241] That is, the corner portion of the upper part of the second-conductive-type semiconductor layer 2140 can form a gentle slope along the top surface 2140u, the first connection surface 2140c1, the second connection surface 2140c2, and the side surface 2140s of the second-conductive-type semiconductor layer.

[0242] With such a structure, the semiconductor light-emitting device 2100 of the embodiment also provides a space for depositing the upper wiring 2400 when manufacturing the display device 2000.

[0243] Thereby, the semiconductor light-emitting device 2100 of the embodiment prevents the upper wiring of the display device 2000 including the light-emitting device 2100 from breaking or becoming fragile. Additionally, thereby, the display device 2000 of the embodiment improves the lighting rate and lighting uniformity during lighting and improves the brightness variation.

[0244] Figure 15 Example (b) of [] illustrates that the connection surface 2140c of the second-conductive-type semiconductor layer includes a curved surface.

[0245] As shown in Figure 15 (a) of Figure 15 , the connection surface 2140c of the second conductivity type semiconductor layer may include n surfaces. At this time, for example, when the value of n is infinite, the connection surface 2140c of the second conductivity type semiconductor layer may include a curved surface. That is, the semiconductor light-emitting device 2100 of the embodiment has a shape in which the upper corner portions are rounded.

[0246] With such a structure, the semiconductor light-emitting device 2100 of the embodiment also provides a space for depositing the upper wiring 2400 when manufacturing the display device 2000.

[0247] Accordingly, the semiconductor light-emitting device 2100 of the embodiment prevents the upper wiring of the display device 2000 including the light-emitting device 2100 from being broken or becoming fragile. In addition, accordingly, the display device 2000 of the embodiment improves the lighting rate and lighting uniformity during lighting, and improves the brightness variation.

[0248] On the other hand, although not separately disclosed in Figures 14 to 15 , the semiconductor light-emitting device 2100 of the embodiment may also include a form in which Figure 15 (a) of Figure 15 and Figure 15 (b) of Figure 15 are combined with each other.

[0249] Hereinafter, the region where the connection surface 2140c of the second conductivity type semiconductor layer is formed will be described.

[0250] Figure 16 FIG. is a schematic view showing the upper part of the semiconductor light-emitting device of the embodiment.

[0251] Figure 16 Shows the semiconductor light-emitting device 2100 including the example described in Figure 15 (b) of Figure 15 .

[0252] Figure 16 In Figure 16 , d1 is the range when the corner portion at the upper part of the semiconductor light-emitting device 2100 is not etched, and represents the horizontal length of the top surface 2140u of the second semiconductor light-emitting device. Hereinafter, it is referred to as the horizontal length d1 of the top surface. For example, when the semiconductor light-emitting device 2100 has a concentric circle shape, d1 is the diameter of the top surface 2140u of the second semiconductor light-emitting device whose upper part is not etched.

[0253] In addition, Figure 16 in Figure 16 , h1 represents the height from the upper part of the semiconductor light-emitting device 2100 to the upper part of the active layer 2130. Hereinafter, it is referred to as the vertical length h1 of the second conductivity type semiconductor layer 2140. At this time, since the height value of the second conductivity type electrode layer 2150 is so small that it can be ignored compared with the heights of the second conductivity type semiconductor layer 2140 and the active layer 2130, therefore, inFigure 16 is omitted.

[0254] Figure 16 In, d2 represents the horizontal length of the connection surface 2140c of the second-conductive-type semiconductor layer. Hereinafter, it is referred to as the horizontal length d2 of the connection surface. In addition, h2 represents the vertical length of the connection surface 2140c of the second-conductive-type semiconductor layer. Hereinafter, it is referred to as the vertical length h2 of the connection surface. As Figure 16 shown, the horizontal length d2 of the connection surface is smaller than the horizontal length d1 of the top surface. At this time, the brightness based on the ratio of the connection surface to the overall area is as shown in [Table 1] below.

[0255]

Table 1

[0256]

[0257] At this time, the results in [Table 1] were measured under the conditions of 3V, measurement angle 0.1, and measurement area 2.61E-7 m^2.

[0258] On the other hand, the overall area represents the horizontal area of the top surface (the area corresponding to d1) and the horizontal area of the connection surface of the second-conductive-type semiconductor layer (the area corresponding to d2x2). The connection surface represents the horizontal area of the connection surface of the second-conductive-type semiconductor layer (the area corresponding to d2x2).

[0259] From [Table 1], it can be known that in the presence of the connection surface, the brightness of the semiconductor light-emitting device 2100 is improved. At this time, on the top surface in the vertical direction of the semiconductor light-emitting device 2100, the horizontal area of the connection surface (the area corresponding to d2 x 2) accounts for 10% to 30% of the overall area. Preferably, on the top surface in the vertical direction of the semiconductor light-emitting device 2100, the horizontal area of the connection surface (the area corresponding to d2x2) accounts for 15% to 25% of the overall area. More preferably, on the top surface in the vertical direction of the semiconductor light-emitting device 2100, the horizontal area of the connection surface (the area corresponding to d2x2) accounts for 20% of the overall area.

[0260] With such a structure, the semiconductor light-emitting device 2100 of the embodiment stably electrically connects the second-conductive-type electrode layer 2150 to the second-conductive-type semiconductor layer 2140. In addition, the semiconductor light-emitting device 2100 of the embodiment reduces the disconnection of the upper wiring 2400 during the process of depositing the upper wiring 2400 in the manufacturing process of the display device 2000.

[0261] On the other hand, Figure 16 The case where the lower part of the semiconductor light-emitting device 2100 is wide and the upper part is narrow is illustrated, but the above range also applies to the case where the lengths of the upper and lower parts of the semiconductor light-emitting device 2100 are the same or the upper part is wider.

[0262] In addition, asFigure 16 As shown, the vertical length h2 of the connection surface has the same value as the vertical length h1 of the second-conductive-type semiconductor layer or a value less than the vertical length h1 of the second-conductive-type semiconductor layer. That is, the connection surface 2140c of the second-conductive-type semiconductor layer d is formed within a range where the active layer 2130 is not etched. Thus, for example, the vertical length h2 of the connection surface is 10% to 30% of the overall height of the semiconductor light-emitting device 2100. Preferably, for example, the vertical length h2 of the connection surface is 20% of the overall height of the semiconductor light-emitting device 2100. With such a structure, the semiconductor light-emitting device 2100 of the embodiment can provide a wider area where the upper wiring 2400 can be deposited while not reducing the light-emitting area of the semiconductor light-emitting device 2100.

[0263] Figure 17 It is a diagram for explaining the wiring process of the display device of the embodiment.

[0264] Figure 17 shows including Figure 15 the semiconductor light-emitting device 2100 illustrated in (b).

[0265] As Figure 17 shown, the display device 2000 includes a plurality of light-emitting semiconductor light-emitting devices 2100 and a wiring substrate 2200 including wirings electrically connected to the plurality of semiconductor light-emitting devices 2100.

[0266] The semiconductor light-emitting device 2100 further includes a passivation layer formed to surround at least a part of the semiconductor light-emitting device 2100.

[0267] The passivation layer 2170 surrounds at least a part of the side surface of the semiconductor light-emitting device 2100. In addition, the passivation layer 2170 surrounds a part of the upper part of the semiconductor light-emitting device 2100. In order to electrically connect the second-conductive-type electrode 2150 to the upper wiring 2400, the passivation layer 2170 is formed to expose the whole or a part of the second-conductive-type electrode 2150.

[0268] With such a structure, at least a part of the passivation layer 2170 surrounds the connection surface 2140c of the second-conductive-type semiconductor layer. Hereinafter, the region where the passivation layer 2170 surrounds the connection surface 2140c of the second-conductive-type semiconductor layer is referred to as the first corresponding region 2170c. The first corresponding region 2170c can be formed corresponding to the shape of the connection surface 2140c of the second-conductive-type semiconductor layer.

[0269] The passivation layer 2170 protects the semiconductor light-emitting device 2100. For example, the passivation layer 2170 is an insulating material. For example, the passivation layer 2170 is SiO2.

[0270] The display device 2000 includes an organic film layer 2300 between a plurality of semiconductor light-emitting devices 2100. In addition, the display device 2000 further includes an upper wiring 2400 connected to the second conductive type electrode 2150 and a lower wiring 2500 connected to the first conductive type electrode 2110. The upper wiring 2400 is electrically connected to the second conductive type electrode 2150. The lower wiring 2500 is electrically connected to the first conductive type electrode 2110. Through such electrical connection, the semiconductor light-emitting device 2100 emits light. The organic film layer 2300 separates the upper wiring 2400 and the lower wiring 2500.

[0271] As Figure 17 shown, the upper wiring 2400 is formed on at least a part of the upper portion of the semiconductor light-emitting device 2100 and on the upper portion of the organic film layer 2300. Thus, the upper wiring 2400 is connected to at least a part of the second conductive type electrode layer 2150. In addition, the upper wiring 2400 is formed on at least a part of the passivation layer 2170.

[0272] With such a structure, at least a part of the upper wiring 2400 is formed on at least a part of the first corresponding region 2170c. That is, at least a part of the upper wiring 2400 is formed corresponding to the shape of the first corresponding region 2170c. Hereinafter, the region where the upper wiring 2400 surrounds at least a part of the first corresponding region 2170c is referred to as the second corresponding region 2400c. That is, the second corresponding region 2400c is formed corresponding to the shape of the connection surface 2140c of the second conductive type semiconductor layer.

[0273] On the other hand, the upper wiring 2400 includes a transparent material. For example, the upper wiring 2400 is ITO.

[0274] With the above configuration, the display device 2000 of the embodiment provides a structure for improving the light-emitting efficiency. For example, in the embodiment, the first corresponding region 2170c and / or the second corresponding region 2400c further refract the light emitted from the semiconductor light-emitting device 2100. That is, the display device 2000 of the embodiment further scatters the light emitted from the semiconductor light-emitting device 2100 under the action of refraction, thereby further improving the light-emitting efficiency.

[0275] Hereinafter, it is confirmed by the photos obtained through experiments Figures 14 to 17 whether the upper wiring 2400 of the display device 2000 described in

[0276] Figure 18 is broken.

[0277] Figure 18The example in which the semiconductor light emitting device 2100 is relatively high is shown. That is, after the organic film layer 2300 is etched, the upper portion of the semiconductor light emitting device 2100 is located at a higher position than the upper portion of the organic film layer 2300 . Figure 18 An example of depositing an upper wiring 2400 on such a semiconductor light emitting device 2100 and an organic film layer 2300 is shown.

[0278] Figure 18 (a) is a photograph showing an example in which a wiring process is performed on a semiconductor light emitting device in which an upper structure is not improved. Figure 18 In (a), C represents the upper wiring 2400 formed on the corner portion of the upper portion of the semiconductor light emitting device 2100. From C, it can be seen that the upper wiring 2400 includes a crack caused by the step. In this way, it can be known that the upper wiring 2400 of the semiconductor light emitting device 2100 without improving the upper structure may be disconnected.

[0279] Figure 18 (b) is a semiconductor light emitting device with an improved upper structure, showing Figures 14 to 17 A photograph of an example of a wiring process performed on a semiconductor light emitting device illustrated in FIG. Figure 18 In (b), D represents the upper wiring 2400 formed on the corner portion of the upper part of the semiconductor light emitting device 2100. From D, it can be seen that the upper wiring 2400 is not disconnected even if there is a step. In this way, it can be known that in the case of the semiconductor light emitting device 2100 with an improved upper structure, the possibility of disconnection of the upper wiring 2400 is reduced.

[0280] Hereinafter, the semiconductor light emitting device 2100 and a method for manufacturing the display device 2000 including the semiconductor light emitting device 2100 will be described in detail.

[0281] Figure 19 is a flowchart of a method for manufacturing a display device according to an embodiment.

[0282] like Figure 19 As shown, the manufacturing method of the display device 2000 of the embodiment includes forming a semiconductor light emitting structure 2101 (refer to Figure 22 ), a step (S101) of etching the upper portion of the semiconductor light emitting structure 2101 is performed.

[0283] The semiconductor light emitting structure 2101 includes a first conductive semiconductor layer 2120, an active layer 2130, a second conductive semiconductor layer 2140, and a second conductive electrode layer 2150. The semiconductor light emitting structure may further include a passivation layer 2170. The semiconductor light emitting structure 2101 is a structure before the semiconductor light emitting device 2100 is formed.

[0284] The growth substrate 2101s (refer to Figure 22 ) provides a space for growing at least a part of the semiconductor light-emitting structure. For example, the growth substrate is sapphire.

[0285] As Figure 19 shown, the manufacturing method of the display device 2000 according to the embodiment includes a step (S102) of transferring the semiconductor light-emitting structure onto the transfer substrate.

[0286] In order to transfer the semiconductor light-emitting structure 2101, a sacrificial layer is deposited on the semiconductor light-emitting structure 2101 to surround the semiconductor light-emitting structure 2101. For example, the sacrificial layer includes Al. An organic PAC pattern is formed on the sacrificial layer. The transfer substrate is bonded onto the organic PAC pattern. After the semiconductor light-emitting structure 2101 is bonded to the transfer substrate, it is separated from the growth substrate 2101s described in S101. For example, the semiconductor light-emitting structure 2101 is separated from the growth substrate 2101s by laser lift-off (LLO). Thereby, a part of the semiconductor light-emitting structure 2101 that is not exposed from the growth substrate will be exposed. For example, the first conductive type semiconductor layer 2120 is exposed by transfer.

[0287] As Figure 19 shown, the manufacturing method of the display device 2000 according to the embodiment includes a step (S103) of forming an electrode layer on the semiconductor light-emitting structure to form the semiconductor light-emitting device 2100.

[0288] Before forming the electrode layer, the sacrificial layer surrounding the periphery of the semiconductor light-emitting structure 2101 is removed. Then, an electrode layer is formed on a part of the semiconductor light-emitting structure 2101 exposed by S102. For example, a first conductive type electrode layer 2110 is deposited on the first conductive type semiconductor layer 2120 exposed by S102. As described above, the first conductive type electrode layer 2110 includes an electrical and / or magnetic material. The conductive adhesive layer 2160 described in Figure 14 can also be deposited on the first conductive type electrode layer 2110. As described above, for example, the conductive adhesive layer 2160 includes Ti, Cr, etc. In the case of the magnetic layer, the conductive adhesive layer 2160 is deposited by electron beam (E-beam), and in the case of metal, the conductive adhesive layer 2160 is deposited by sputter. Through this, the semiconductor light-emitting device 2100 is formed.

[0289] As Figure 19 shown, the manufacturing method of the display device 2000 according to the embodiment includes a step (S104) of assembling the semiconductor light-emitting device 2100 onto the wiring substrate 2200.

[0290] If the semiconductor light-emitting device 2100 is formed through S103, then, in order to manufacture the display device 2000 by assembling the semiconductor light-emitting device 2100, the transfer substrate is separated from the semiconductor light-emitting device 2100. At this time, the organic PAC pattern coated for bonding with the transfer substrate is also removed.

[0291] On the other hand, for example, a method of assembling the semiconductor light-emitting device 2100 to the wiring substrate 2200 includes Figures 10 to 12 the method described in. In this case, the semiconductor light-emitting device 2100 separated from the transfer substrate is dispersed in a fluid. At this time, for example, the wiring substrate 2200 includes sapphire, glass, silicone, PI (PolyImide).

[0292] Figure 20 is a flowchart illustrating Figure 19 an example of S101.

[0293] As Figure 20 shown, the manufacturing method of the display device 2000 according to the embodiment includes a step (S201) of laminating a first conductive type semiconductor layer 2120, an active layer 2130, and a second conductive type semiconductor layer 2140 on a growth substrate.

[0294] The first conductive type semiconductor layer 2120, the active layer 2130, and the second conductive type semiconductor layer 2140 are sequentially grown on the growth substrate. In order to protect the semiconductor layer, the semiconductor light-emitting structure may further include a buffer layer (not shown) and / or an undoped layer. For example, the semiconductor light-emitting structure sequentially laminates a buffer layer, an undoped layer, the first conductive type semiconductor layer 2120, the active layer 2130, and the second conductive type semiconductor layer 2140 on the growth substrate.

[0295] The buffer layer, the undoped layer, the first conductive type semiconductor layer 2120, the active layer 2130, and / or the second conductive type semiconductor layer 2140 may be formed on the growth substrate by, for example, metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), etc.

[0296] As Figure 20 shown, the manufacturing method of the display device 2000 according to the embodiment includes a step (S202) of depositing a second conductive type electrode layer 2150 on at least a part of one surface of the second conductive type semiconductor layer 2140.

[0297] The second conductive type electrode layer 2150 is deposited on the second conductive type semiconductor layer 2140. The second conductive type electrode layer 2150 is disposed on the second conductive type semiconductor layer 2140 through a heat treatment process after deposition.

[0298] As Figure 20 shown, the manufacturing method of the display device 2000 according to the embodiment includes a step (S203) of etching at least a part of the upper portion of the second conductivity type semiconductor layer 2140.

[0299] The upper portion of the second conductivity type semiconductor layer 2140 is etched. Specifically, the corner portions of the top surface of the second conductivity type semiconductor layer 2140 are etched. By this, the upper portion of the second conductivity type semiconductor layer 2140 forms the structure described in Figures 14 to 18 . In addition, at least a part of the side surface of the second conductivity type semiconductor layer 2140 is etched. By this, at least a part of the side surface of the second conductivity type semiconductor layer 2140 forms the structure described in Figures 14 to 17 . Thereby, the upper wiring 2400 of the display device 2000 according to the embodiment is prevented from being broken.

[0300] As Figure 20 shown, the manufacturing method of the display device 2000 according to the embodiment includes a step (S204) of depositing a passivation layer 2170.

[0301] According to the step S203, if the etching of the upper portion of the second conductivity type semiconductor layer 2140 is completed, the etching pattern 2600 is removed from the semiconductor light emitting structure 2101. In addition, the passivation layer 2101 is deposited while covering the entire upper portion of the semiconductor light emitting structure 2101. As described above, the passivation layer 2101 is an insulating film, for example, SiO2. A part of the passivation layer 2101 covering the entire upper portion is removed in order to expose at least a part of the second conductivity type electrode 2150.

[0302] If the passivation layer 2101 is deposited on the semiconductor light emitting structure 2101, the sacrificial layer deposition process described in the S102 step of Figure 19 is performed.

[0303] In the following Figures 21 to 22 , the step S203 of Figure 20 is described in more detail.

[0304] On the other hand, Figures 21 to 22 a method of forming the semiconductor light emitting device 2100 including the example described in (b) of Figure 15 is described. Therefore, in the case of forming the semiconductor light emitting device 2100 including the example described in Figure 14 for example, different from the description in the following Figures 21 to 22 , only two etching processes may be performed. In addition, in the case of forming the semiconductor light emitting device 2100 shaped like a polygon as in Figure 15 (a) for example, different from the description in the following Figures 21 to 22In the description, differently, etching can be performed more than three times.

[0305] Figure 21 is the description Figure 20 of the flowchart of the example of S203.

[0306] Figure 22 is a schematic diagram showing Figure 21 each step-based semiconductor light-emitting structure.

[0307] As Figure 21 shown, the manufacturing method of the display device 2000 of the embodiment includes the step (S301) of forming an etching pattern 2600 on the second conductive type electrode layer 2150.

[0308] Figure 22 of (a) shows the semiconductor light-emitting structure 2101 formed on the growth substrate 2101s. As Figure 22 of (a) shows, according to S301, an etching pattern 2600 is formed on the second conductive type electrode layer 2150. For example, the etching pattern 2600 is PR (Photo Resist).

[0309] As Figure 21 shown, the manufacturing method of the display device 2000 of the embodiment includes the step (S302) of performing a first etching on the semiconductor light-emitting structure 2101.

[0310] As Figure 22 of (b) shows, at least a part of the upper portion of the semiconductor light-emitting structure 2101 is subjected to the first etching. At this time, the first etching is performed at a first etching rate.

[0311] Thereby, the upper portion of the semiconductor light-emitting structure 2101 has a shape suitable for deposition on the upper portion of the display device 2000. In addition, by the first etching, an angle for forming the connection surface 2140c of the second conductive type semiconductor layer is formed. For example, by the first etching, a curvature suitable for forming the connection surface 2140c of the second conductive type semiconductor layer is formed.

[0312] As Figure 21 shown, the manufacturing method of the display device 2000 of the embodiment includes the step (S303) of performing a second etching on the semiconductor light-emitting structure 2101 that has been subjected to the first etching.

[0313] As Figure 22 of (c) shows, at least a part of the upper portion of the semiconductor light-emitting structure 2101 that has been subjected to the first etching is subjected to the second etching. The connection surface 2140c of the second conductive type semiconductor layer is formed by the second etching. At this time, the second etching can be performed at a second etching rate. The second etching rate is faster than the first etching rate.

[0314] The etching rate represents the amount etched per hour. For example, the etching rate can be increased by increasing the power of the device used for etching. For example, a greater power is required when performing the second etching compared to when performing the first etching. Alternatively, the etching rate is increased, for example, by increasing the concentration of etching particles. For example, in the case of etching including plasma etching, a higher concentration of etching particles (e.g., Cl2) is required when performing the second etching compared to when performing the first etching. On the other hand, the amount of such etching can be increased by increasing the etching time. For example, the etching can be performed for a longer time when performing the second etching compared to when performing the first etching.

[0315] On the other hand, as Figure 16 shown, the second etching is performed only within the height range of the second conductivity type semiconductor layer 2140. That is, the second etching does not affect the active layer 2130.

[0316] As Figure 21 shown, the manufacturing method of the display device 2000 of the embodiment includes a step (S304) of performing a third etching on the semiconductor light emitting structure 2101.

[0317] As Figure 22 shown in (d) of, a third etching is performed on at least a part of the side surface of the semiconductor light emitting structure 2101 on which the second etching has been performed. At least a part of the side surface 2101ss of the semiconductor light emitting structure is exposed by the third etching. By this, the semiconductor light emitting structure 2101 can more easily perform Figure 19 the step S104 described in. At this time, the third etching is performed at a third etching rate. The third etching rate is faster than the second etching rate. According to the third etching, the side surface 2101ss of the semiconductor light emitting structure is etched to be steeper compared to the first etching and the second etching.

[0318] If the step of S304 ends, then according to Figure 20 S204 of, at least a part of the side surface 2101ss of the semiconductor light emitting structure is surrounded and a passivation layer 2170 is deposited.

[0319] Hereinafter, through Figures 23 to 24 , the execution degree and form of the third etching will be described.

[0320] Figure 23 is a cross-sectional view of the display device of the embodiment in the front direction.

[0321] Figure 23 In, H1 represents the execution in the semiconductor light emitting device 2100 Figure 22The length of the region of the third etching described in (d). For example, H1 is the vertical length that forms an inclined first side surface when connected to the connection surface. At this time, for example, the first side surface is formed on the side surfaces of at least a part of the active layer 2130 and the first conductive type semiconductor layer 2120.

[0322] In addition, Figure 23 in which H2 represents the length of the region of the third etching not performed in the semiconductor light-emitting device 2100 Figure 22 described in (d). For example, H2 is the vertical length that forms an inclined second side surface when connected to the first side surface. At this time, for example, the second side surface is formed on the side surfaces of at least a part of the first conductive type semiconductor layer 2120.

[0323] At this time, if H1 does not have a sufficient value, for example, when performing LLO (Laser Lift Off) after bonding the semiconductor light-emitting device 2100 to the substrate, there is a problem that the lower part of the semiconductor light-emitting device 2100 is damaged during the separation process of the semiconductor light-emitting device 2100 from the substrate.

[0324] Or, if H2 does not have a sufficient value, there is a problem that a short circuit will occur. For example, when H1 includes the active layer 2130 or has a height exceeding that of the active layer 2130, there is a problem of a short circuit occurring when the first conductive type semiconductor layer 2120 and / or the second conductive type semiconductor layer 2140 are connected to the lower wiring 2500.

[0325] Therefore, in the semiconductor light-emitting device 2100 of the embodiment, H1 and H2 have a ratio suitable for each other. For example, H2 is two to four times that of H1. Preferably, H2 is three times that of H1. On the other hand, in order to prevent damage, H1 has a thickness of 650 μm or more. In order to prevent damage, H1 preferably has a thickness of 750 μm or more.

[0326] Figure 24 is a cross-sectional view of the display device of the embodiment in the front direction.

[0327] Figure 24 In this case, θ1 represents the side surface angle of the semiconductor light-emitting device 2100 formed in the H1 interval. In addition, Figure 24 in this case, θ2 represents the side surface angle of the semiconductor light-emitting device 2100 formed in the H2 interval.

[0328] For example, θ1 is 70 degrees or more and less than 90 degrees. For example, Figure 24 in (a), the case where θ1 is less than 70 degrees is described. In this case, in the semiconductor light-emitting device 2100, as the end portion of the semiconductor light-emitting device 2100 becomes thinner, compared to, for example, the case where θ1 is 70 degrees or more Figure 24In (b) of this, more damage may occur in the LLO process.

[0329] Alternatively, for example, θ2 is more than 70 degrees and less than 90 degrees. For example, Figure 24 (a) of this is described for the case where θ2 is less than 70 degrees. In this case, as the size of the active layer 2130 becomes smaller, compared with, for example, (b) where θ2 is more than 70 degrees Figure 24 the light-emitting area is relatively reduced. Therefore, the light efficiency may be decreased.

[0330] Therefore, in the semiconductor light-emitting device 2100 of the embodiment, θ1 and / or θ2 are formed to be more than 70 degrees and less than 90 degrees. By this, the present invention can minimize the damage occurring in the semiconductor light-emitting device 2100 while improving the light efficiency.

[0331] With the above features, the present invention provides a semiconductor light-emitting device for improving light-emitting efficiency, a display device including the semiconductor light-emitting device, and a manufacturing method. For example, the present invention provides a semiconductor light-emitting device for improving breakage of upper wirings, maintaining uniform connection between upper and lower lighting wirings and the semiconductor light-emitting device, a display device including the semiconductor light-emitting device, and a manufacturing method. In addition, thereby, the present invention provides a semiconductor light-emitting device for improving the variation of brightness of the semiconductor light-emitting device, a display device including the semiconductor light-emitting device, and a manufacturing method. In addition, the present invention can reduce the friction rate between the substrate and the semiconductor light-emitting device and improve the transfer speed when manufacturing the semiconductor light-emitting device, for example, by etching the upper corner portions. In addition, the present invention provides a semiconductor light-emitting device with uniform brightness and excellent uniformity, a display device including the semiconductor light-emitting device, and a manufacturing method.

[0332] On the other hand, the present invention is applicable to semiconductor light-emitting devices. For example, the present invention is applicable to vertical semiconductor light-emitting devices. For example, the present invention is applicable to miniaturized semiconductor light-emitting devices such as micro LEDs.

[0333] As described above, the light-emitting device of the embodiment of the present invention, the display device including the light-emitting device, and the manufacturing method thereof have been described in specific embodiments, but this is only an example, and the present invention is not limited thereto, and should be interpreted as having the maximum scope based on the basic idea disclosed in this specification.

[0334] Those skilled in the art can implement the unspecified embodiments by combining and replacing the disclosed embodiments, but this still does not deviate from the scope of the rights of the present invention. In addition to this, those skilled in the art can easily change or deform the disclosed embodiments based on this specification, and such changes or deformations also clearly belong to the scope of the rights of the present invention.

[0335] Industrial applicability

[0336] The light-emitting device of the embodiment, the display device including the light-emitting device, and the manufacturing method thereof have industrial applicability.

Claims

1. A semiconductor light-emitting device, wherein, Comprising: A first conductive type electrode layer; A first conductive type semiconductor layer, electrically connected to the first conductive type electrode layer and located on the first conductive type electrode layer; An active layer, located on the first conductive type semiconductor layer; A second conductive type semiconductor layer, located on the active layer, including a top surface, a connection surface and side surfaces, the connection surface having a first angle with the top surface and formed adjacent to the top surface, the side surfaces having a second angle with the connection surface and formed adjacent to the connection surface; And A second conductive type electrode layer, electrically connected to the second conductive type semiconductor layer and located on at least a part of the top surface of the second conductive type semiconductor layer.

2. The semiconductor light-emitting device according to claim 1, wherein, The first angle and the second angle are greater than 90 degrees and less than 180 degrees.

3. The semiconductor light-emitting device according to claim 1, wherein, The connection surface includes n surfaces, each of the n surfaces is formed to have an inclination greater than 90 degrees and less than 180 degrees with respect to each other, and n is an integer of 1 or more.

4. The semiconductor light-emitting device according to claim 1, wherein, At least a part of the connection surface is formed as a curved surface.

5. The semiconductor light-emitting device according to claim 1, wherein, The vertical length of the connection surface is less than or equal to the vertical length of the second conductive type semiconductor layer.

6. The semiconductor light-emitting device according to claim 1, wherein, The vertical length of the connection surface is 10% to 30% of the vertical length of the semiconductor light emitting device.

7. The semiconductor light-emitting device according to claim 1, wherein, The horizontal area of the connection surface is 10% to 30% of the overall area of the semiconductor light emitting device.

8. The semiconductor light-emitting device according to claim 1, wherein, The side surfaces include a first side surface, the first side surface includes an inclination to connect with the connection surface, the first side surface is formed on the side surfaces of at least a part of the active layer and the first conductive type semiconductor layer, and the first side surface is formed to have an angle of 70 degrees to 90 degrees with respect to the ground.

9. The semiconductor light-emitting device according to claim 8, wherein, The side surfaces include a second side surface, the second side surface includes an inclination to connect with the first side surface, the second side surface is formed on the side surfaces of at least a part of the first conductive type semiconductor layer, and the second side surface is formed to have an angle of 70 degrees to 90 degrees with respect to the ground.

10. A display device, wherein, Comprising: A plurality of semiconductor light emitting devices that emit light; And A wiring substrate, including wirings electrically connected to the plurality of semiconductor light emitting devices; At least one of the plurality of semiconductor light emitting devices includes: A first conductive type electrode layer; A first conductive type semiconductor layer, electrically connected to the first conductive type electrode layer and located on the first conductive type electrode layer; An active layer, located on the first conductive type semiconductor layer; A second conductive type semiconductor layer, located on the active layer, including a top surface, a connection surface and side surfaces, the connection surface having a first angle with the top surface and formed adjacent to the top surface, the side surfaces having a second angle with the connection surface and formed adjacent to the connection surface; A second conductive type electrode layer, electrically connected to the second conductive type semiconductor layer and located on at least a part of the top surface of the second conductive type semiconductor layer; and A passivation layer, surrounding at least a part of the semiconductor light emitting device.

11. The display device according to claim 10, wherein, The display device further includes an upper wiring connected to at least a part of the second conductive type electrode layer, At least a part of the passivation layer includes a first corresponding region surrounding the connection surface of the second conductive type semiconductor layer, and the first corresponding region is formed corresponding to the shape of the surrounded connection surface, At least a part of the upper wiring includes a second corresponding region formed on at least a part of the passivation layer, and the second corresponding region is formed corresponding to the shape of the surrounded connection surface.

12. The display device according to claim 10, wherein, The connection surface includes n surfaces, and the n surfaces are each formed to have an inclination greater than 90 degrees and less than 180 degrees with respect to each other and are adjacent.

13. The display device according to claim 10, wherein, The connection surface is a curved surface having a prescribed curvature.

14. The display device according to claim 10, wherein, The semiconductor light-emitting device is a micro LED having a size in the micron unit.

15. A method for manufacturing a display device, wherein, Comprising: A step of forming a semiconductor light-emitting structure on a growth substrate and etching an upper portion of the semiconductor light-emitting structure; A step of transferring the semiconductor light-emitting structure onto a transfer substrate; A step of forming an electrode layer on the transferred semiconductor light-emitting structure to form a semiconductor light-emitting device; And A step of assembling the semiconductor light-emitting device onto a wiring substrate.

16. The method for manufacturing a display device according to claim 15, wherein, The step of etching the upper portion of the semiconductor light-emitting structure includes: A step of etching an edge portion of the top surface of the semiconductor light-emitting structure; and A step of etching at least a part of the side surface of the semiconductor light-emitting structure.

17. The method for manufacturing a display device according to claim 16, wherein, The step of etching the edge portion of the top surface of the semiconductor light-emitting structure includes: A step of performing a first etching on at least a part of the upper portion of the semiconductor light-emitting structure at a first etching rate; and A step of performing a second etching on at least a part of the upper portion of the semiconductor light-emitting structure after the first etching at a second etching rate.

18. The method for manufacturing a display device according to claim 17, wherein, The second etching rate is faster than the first etching rate.

19. The method for manufacturing a display device according to claim 18, wherein, The step of etching at least a part of the side surface of the semiconductor light-emitting structure includes a step of performing a third etching on at least a part of the semiconductor light-emitting structure after the second etching at a third etching rate faster than the second etching rate.

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