Surface processing without organic contamination

Abstract

A method includes receiving a metal component including an original surface including a metal substrate, a first intrinsic oxide disposed on the metal substrate, and a hydrocarbon disposed on the metal substrate. The method further includes processing the original surface of the metal component to remove the first intrinsic oxide and a first portion of the hydrocarbon from the metal substrate. The processing results in a processed surface of the metal component, the processed surface including a metal substrate that does not have the first intrinsic oxide and does not have the first portion of the hydrocarbon. The method further includes performing a surfacing of the worked surface of the metal component to remove a second portion of the hydrocarbon. The method further includes surface treating the metal component to remove a third portion of the hydrocarbon. The method further includes performing cleaning of the metal component and drying of the metal component.

Description

[0001] This application is a divisional application of the invention patent application with the application date of April 28, 2021, the application number of 202180030694.1, and the invention name of "Surface Machining without Organic Contamination". Technical Field

[0002] Embodiments of the present disclosure relate to machining of surfaces in a manufacturing system (such as a substrate processing system), and more particularly to machining of surfaces without organic contamination in a manufacturing system. Background Art

[0003] In semiconductor processing and other electronic processing, objects such as substrates are transferred between various parts of the system. Different parts of the system include storage areas, transfer areas, processing areas, etc. Such storage areas, transfer areas, processing areas, etc. are generally made of metals having contaminants therein. It is known that such contaminants can migrate to substrates stored in, processed by, and / or passing through storage areas, transfer areas, processing areas, etc. Summary of the Invention

[0004] The following is a simplified summary of the present disclosure to provide a basic understanding of some aspects of the present disclosure. This summary is not an extensive overview of the present disclosure. This summary is neither intended to identify key or important elements of the present disclosure nor to depict any scope of a particular embodiment of the present disclosure or any scope of the claims. The sole purpose of this summary is to present some concepts of the present disclosure in a simplified form as a prelude to the more detailed description that follows.

[0005] In an aspect of the present disclosure, a method includes receiving a metal component including an original surface that includes a metal substrate, a first native oxide disposed on the metal substrate, and a hydrocarbon disposed on the metal substrate. The method further includes machining the original surface of the metal component to remove the first native oxide from the metal substrate and remove a first portion of the hydrocarbon. This machining produces a machined surface of the metal component that includes the metal substrate without the first native oxide and without the first portion of the hydrocarbon. After this machining, the method further includes performing surface machining of the machined surface of the metal component to remove a second portion of the hydrocarbon to produce a trimmed surface of the metal component. After this surface machining, the method includes performing surface treatment on the metal component to remove a third portion of the hydrocarbon. After this surface treatment, the method further includes performing cleaning of the metal component. After performing the cleaning, the method further includes drying the metal component to produce a trimmed surface of the metal component.

[0006] In another aspect of the present disclosure, a method includes generating a trimmed surface of a metal vacuum chamber component of a substrate processing system. This generation includes machining an original surface of the metal vacuum chamber component to remove a first native oxide and a first portion of hydrocarbons from a metal substrate of the metal vacuum chamber component to produce a machined surface of the metal vacuum chamber component. After this machining, this generation includes performing surface finishing of the machined surface of the metal vacuum chamber component to remove a second portion of hydrocarbons from the metal substrate to produce a trimmed surface of the metal vacuum chamber component. After this surface finishing, this generation includes surface treating the metal vacuum chamber component to remove a third portion of hydrocarbons. After this surface treating, this generation further includes performing cleaning of the metal vacuum chamber component. After performing the cleaning, this generation further includes drying the metal vacuum chamber component to produce a trimmed surface of the metal vacuum chamber component. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The present disclosure is illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like reference numerals indicate similar elements. It should be noted that different references to "one" or "an" embodiment in the present disclosure do not necessarily refer to the same embodiment, and such references mean at least one.

[0008] Figure 1 Illustrates a processing system according to certain embodiments.

[0009] Figures 2A - 2B Illustrates a cross-sectional view of a processing system according to certain embodiments.

[0010] Figures 3A - 3B Illustrates a method for generating a trimmed surface of a metal component of a processing system according to certain embodiments.

[0011] Figure 4A Illustrates a cross-sectional view of a metal component of a processing system according to certain embodiments.

[0012] Figure 4B Illustrates a system for generating a trimmed surface of a metal component according to certain embodiments. DETAILED DESCRIPTION

[0013] The embodiments described herein relate to surface finishing (e.g., aluminum surface finishing) of metal components in a manufacturing system (e.g., to produce a trimmed surface substantially free of organic contamination of a metal component such as an aluminum component).

[0014] In a manufacturing system such as a substrate manufacturing system, contents (e.g., substrates, wafers, semiconductors, process fitting rings, carriers, etc.) are transferred between different parts of the manufacturing system (e.g., via a robotic arm). The environment of the substrate manufacturing system is controlled to provide temperature, pressure, gas type, and / or the like.

[0015] Traditionally, the surfaces of components in a substrate manufacturing system have organic contamination (e.g., organic residues, hydrocarbons, etc.). After traditional cleaning, organic residues remain on the trimmed surfaces of the components of the substrate processing system. For example, isopropyl alcohol (IPA) wiping does not remove nanometer-thick organic matter, etc. Once the component is placed in a substrate processing system (e.g., a vacuum system), the organic matter on the part surface outgases (e.g., outgases under high vacuum such as 1E-8 Torr and under high-temperature conditions due to low vapor pressure at high temperatures). The outgassing molecules are trapped and accumulate on the surfaces (e.g., all vacuum surfaces, process chamber walls, process fitting rings, etc.). When the incoming substrate enters the substrate processing system (e.g., a vacuum chamber), the incoming substrate provides additional cold surface area, and the gas molecules nucleate and condense on the cold substrate surface (e.g., condense in a distribution pattern in the shape of a robot on the wafer edge or any distribution pattern). When the robot (e.g., a robot that provides additional cold surface area) is exposed to a surface that causes molecules to outgas (e.g., in a processing chamber), the gas molecules nucleate and condense on the robot. Once the robot (e.g., robot blades, robot wrist) is heated and retracted, the robot approaches another component (e.g., a cold auxiliary robot blade, a cold substrate, etc.) and the outgassing molecules from the warm robot (e.g., blades, wrist) condense on other components. Some of the contaminants are long-chain molecules (e.g., long-chain hydrocarbons) with high boiling temperatures and high adhesion coefficients.

[0016] As contaminants (e.g., organic contaminants, hydrocarbons, etc.) in the substrate processing system are deposited on the substrate (e.g., organic contamination on the wafer), the substrate is damaged, and the yield of the substrate processing system (e.g., a mass production factory) is reduced. Organic contamination on the wafer affects the device performance after process integration (e.g., integrating the contaminated substrate in the device). In a vacuum environment (e.g., ultra-low pressure; high-vacuum product startup on products such as physical vapor deposition (PVD), chemical vapor deposition (CVD), or atomic layer deposition), outgassing from metal component surfaces (e.g., aluminum component surfaces) is the main source of organic contamination on the wafer.

[0017] Traditional methods of manufacturing metal (e.g., aluminum) components contribute to the generation of organic contaminants. In some traditional systems, replacing (e.g., substituting) suspect components (e.g., those suspected of contributing more to contamination) is not efficient in terms of time or cost. In some traditional systems, monitoring using a wafer cycle plus a residual gas analyzer (RGA) is extremely time-consuming, expensive, and unpredictable.

[0018] The devices, systems, and methods disclosed herein provide surface processing (e.g., aluminum surface processing) in a substrate processing system (e.g., to produce a substantially organic contamination-free finished surface of an aluminum component). Embodiments regarding metal surface processing and aluminum surface processing are discussed. It should be understood that in some embodiments, the aluminum components described herein are pure aluminum components or components composed of aluminum alloys such as: 5000 series aluminum alloys; 6000 series aluminum alloys; one or more of copper, magnesium manganese, silicon, tin, zinc, and aluminum; and / or the like. Additionally, it should be understood that in some embodiments, the surface processing techniques described herein with reference to aluminum are also applicable to other types of metal surfaces such as steel surfaces, surfaces where aluminum is not the primary metal, stainless steel surfaces, titanium surfaces, stainless steel alloy surfaces, titanium alloy surfaces, and / or the like.

[0019] Prior to processing, a metal component (e.g., an aluminum component) includes an as-received surface that includes a metal substrate (e.g., an aluminum substrate), a first native oxide (e.g., a native oxide layer) disposed on the metal substrate, and a hydrocarbon disposed on the metal substrate (e.g., hydrocarbon particles disposed within and / or on the native oxide layer). The as-received surface of the metal component is processed to remove the first native oxide from the metal substrate and a first portion of the hydrocarbon to produce a processed surface of the metal component (e.g., the processed surface includes a metal substrate that does not have the first native oxide and does not have the first portion of the hydrocarbon). A surface treatment is performed on the processed surface of the metal component to remove a second portion of the hydrocarbon. In some embodiments, the surface treatment is a non-abrasive surface treatment (e.g., non-roughening surface treatment, non-mechanical polishing surface treatment, non-particle polishing surface treatment, non-jitterbug mechanical surface finishing). In some embodiments, the surface treatment is an abrasive surface treatment (e.g., roughening surface treatment, mechanical polishing surface treatment, particle polishing surface treatment, jitterbug mechanical surface finishing, etc.). Subsequently, the metal component is surface treated (e.g., polished, etched with HF or HNO3). After the surface treatment, the metal component is cleaned (e.g., via a cleaning agent, etc.) and then dried (e.g., baked dry) to produce a finished surface of the metal component. In some embodiments, the finished surface of the metal component has an average surface roughness of up to 32 micro-inches in average roughness (Ra). In some embodiments, the metal component does not undergo a roughening (e.g., jitterbug, etc.) surface treatment.

[0020] The apparatuses, systems, and methods disclosed herein have advantages over traditional solutions. The advantages include reducing organic contamination (e.g., hydrocarbons, organic residues, etc.) of the finished surfaces of metal components disposed within a substrate processing system. This reduces the cleaning time of the metal components, improves the tool life cycle, improves the tool readiness for production substrates (e.g., reduces the time between installation and production), reduces outgassing molecules from the metal components, reduces organic contamination on the wafers, increases the yield of the substrate processing system, and reduces the replacement of metal components. The present disclosure avoids the increased number of replacement parts, time consumption, and cost of traditional surface treatment systems and techniques that replace components suspected of contributing to the generation of contaminants and use outgassing wafer cycles plus RGA monitoring. The advantages further include that the final testing and startup time of the equipment tools are significantly reduced and well controlled compared to traditional systems and techniques. The advantages further include that the cost of process variations is much lower than the cost of cycling wafers or replacing hardware of traditional systems and techniques. The present disclosure reduces (e.g., or eliminates) the source of contamination and produces a finished surface that is robust when consumer test conditions (e.g., vacuum, temperature, etc.) change. The present disclosure produces a smooth metal surface (e.g., via diamond blade machining and eliminating oscillatory polishing) to minimize embedded surface organic contaminants and does not (e.g., in an ultra-low pressure process chamber environment, in a high vacuum environment) outgas and contaminate the substrate. In an embodiment, the present disclosure removes the source of contamination during the manufacture of the metal components (e.g., at the supplier's site). The present disclosure removes tool marks.

[0021] Although some embodiments of the present disclosure refer to finished surfaces of metal components (e.g., aluminum components) that are free of organic contamination, in some embodiments, the finished surfaces of the metal components are substantially free of organic contamination and / or have less organic contamination (e.g., hydrocarbons) compared to traditional systems.

[0022] As described herein, in some embodiments, the metal components and / or metal substrates (e.g., aluminum components and / or aluminum substrates) include other elements (e.g., the aluminum components and aluminum substrates are aluminum alloys). In some embodiments, the primary metal in the metal components and metal substrates (e.g., aluminum components and aluminum substrates) is aluminum. In some embodiments, the metal components and metal substrates (e.g., aluminum components and aluminum substrates) include one or more of copper, magnesium manganese, silicon, tin, zinc, and / or the like and aluminum. In some embodiments, the metal components and metal substrates include stainless steel, stainless steel alloys, titanium, titanium alloys, and / or the like.

[0023] Figure 1FIG. illustrates a processing system 100 (e.g., a wafer processing system, a substrate processing system, a semiconductor processing system) according to certain embodiments. The processing system 100 includes a factory interface 101 and load ports 128 (e.g., load ports 128A - 128D). In some embodiments, the load ports 128A - 128D are directly mounted to the factory interface 101 (e.g., sealed against this factory interface). An enclosure system 130 (e.g., a cassette, a front-opening unified pod (FOUP), a process kit enclosure system, or the like) is configured to be removably coupled (e.g., docked) to the load ports 128A - 128D. Referring to Figure 1 , the enclosure system 130A is coupled to the load port 128A, the enclosure system 130B is coupled to the load port 128B, the enclosure system 130C is coupled to the load port 128C, and the enclosure system 130D is coupled to the load port 128D. In some embodiments, one or more enclosure systems 130 are coupled to the load ports 128 for transferring wafers and / or other substrates into and out of the processing system 100. Each of the enclosure systems 130 is sealed against the corresponding load port 128. In some embodiments, a first enclosure system 130A is docked to the load port 128A (e.g., for replacing a used process kit ring). Once one or more such operations are performed, the first enclosure system 130A is undocked from the load port 128A, and subsequently a second enclosure system 130 (e.g., a FOUP containing wafers) is docked to the same load port 128A. In some embodiments, the enclosure system 130 (e.g., the enclosure system 130A) is an enclosure system having a rack for aligning carriers and / or process kit rings.

[0024] In some embodiments, the load port 128 includes a front interface that forms a vertical opening (or substantially vertical opening). The load port 128 further includes a horizontal surface for supporting the enclosure system 130 (e.g., cassette, process fitting enclosure system). Each enclosure system 130 (e.g., FOUP for wafers, process fitting enclosure system) has a front interface that forms a vertical opening. The front interface of the enclosure system 130 is sized to engage with the front interface of the load port 128 (e.g., sized to seal to the front interface of the load port 128) (e.g., the vertical opening of the enclosure system 130 is approximately the same size as the vertical opening of the load port 128). The enclosure system 130 is placed on the horizontal surface of the load port 128, and the vertical opening of the enclosure system 130 is aligned with the vertical opening of the load port 128. The front interface of the enclosure system 130 is interconnected with the front interface of the load port 128 (e.g., the front interface of the enclosure system 130 is clamped to, fixed to, sealed to the front interface of the load port 128). The bottom plate (e.g., base plate) of the enclosure system 130 has features that engage with the horizontal surface of the load port 128 (e.g., load features (such as recesses or sockets) that engage with load port kinematic pin features, load port features for pin clearance, and / or enclosure system docking tray latch clamping features). The same load port 128 is used for different types of enclosure systems 130 (e.g., process fitting enclosure systems, cassettes containing wafers, etc.).

[0025] In some embodiments, the enclosure system 130 (e.g., process fitting enclosure system) includes one or more of the contents 110 (e.g., one or more of a process fitting ring, an empty process fitting ring carrier, a process fitting ring disposed on the process fitting ring carrier, a placement validation wafer, etc.). In some instances, the enclosure system 130 is coupled to the factory interface 101 (e.g., coupled via the load port 128) to enable automatic transfer of the process fitting ring on the process fitting ring carrier into the processing system 100 to replace a used process fitting ring.

[0026] In some embodiments, the processing system 100 further includes first vacuum ports 103a, 103b that couple the factory interface 101 to corresponding degassing chambers 104a, 104b. Second vacuum ports 105a, 105b are coupled to the corresponding degassing chambers 104a, 104b and are disposed between the degassing chambers 104a, 104b and the transfer chamber 106 to facilitate transfer of the wafer and contents 110 (e.g., process fitting ring) into the transfer chamber 106. In some embodiments, the processing system 100 includes and / or uses one or more degassing chambers 104 and a corresponding number of vacuum ports 103, 105 (e.g., the processing system 100 includes a single degassing chamber 104, a single first vacuum port 103, and a single second vacuum port 105). The transfer chamber 106 includes a plurality of processing chambers 107 (e.g., four processing chambers 107, six processing chambers 107, etc.) disposed around and coupled to the transfer chamber 106. The processing chambers 107 are coupled to the transfer chamber 106 via corresponding ports 108 such as slit valves or the like. In some embodiments, the factory interface 101 is at a higher pressure (e.g., atmospheric pressure), while the transfer chamber 106 is at a lower pressure (e.g., vacuum). Each degassing chamber 104 (e.g., load lock, pressure chamber) has a first door (e.g., first vacuum port 103) that seals the degassing chamber 104 from the factory interface 101 and a second door (e.g., second vacuum port 105) that seals the degassing chamber 104 from the transfer chamber 106. When the first door is open and the second door is closed, the contents are transferred from the factory interface 101 into the degassing chamber 104, the first door will close, the pressure in the degassing chamber 104 will be reduced to match the transfer chamber 106, the second door will open, and the contents will be transferred out of the degassing chamber 104. A local center finding (LCF) device (e.g., before entering the processing chamber 107, after leaving the processing chamber 107) will be used to align the contents in the transfer chamber 106.

[0027] In some embodiments, the processing chambers 107 include one or more of an etch chamber, a deposition chamber (including atomic layer deposition, chemical vapor deposition, physical vapor deposition, or plasma-enhanced versions of the foregoing depositions), an annealing chamber, or the like.

[0028] The factory interface 101 includes a factory interface robot 111. The factory interface robot 111 includes a robotic arm, such as a Selective Compliance Assembly Robot Arm (SCARA) robot. Examples of SCARA robots include 2-link SCARA robots, 3-link SCARA robots, 4-link SCARA robots, etc. The factory interface robot 111 includes an end effector at the end of the robotic arm. The end effector is configured to pick up and transport specific objects, such as wafers. Alternatively or additionally, the end effector is configured to transport objects such as carriers and / or process fitting rings (edge rings). The robotic arm has one or more links or members (e.g., wrist members, upper arm members, forearm members, etc.) configured to move to move the end effector in different orientations and to different positions. The factory interface robot 111 is configured to transfer objects between a housing system 130 (e.g., cassette, FOUP) and degassing chambers 104a, 104b (or load ports).

[0029] The transfer chamber 106 includes a transfer chamber robot 112. The transfer chamber robot 112 includes a robotic arm having an end effector at the end of the robotic arm. The end effector is configured to transport specific objects such as wafers. In some embodiments, the transfer chamber robot 112 is a SCARA robot, but in some embodiments, the transfer chamber robot 112 has fewer links and / or fewer degrees of freedom compared to the factory interface robot 111.

[0030] The controller 109 controls various aspects of the processing system 100. The controller 109 is and / or includes a computing device such as a personal computer, a server computer, a programmable logic controller (PLC), a microcontroller, etc. The controller 109 includes one or more processing devices, and in some embodiments, the processing device is a general-purpose processing device such as a microprocessor, a central processing unit, or the like. More specifically, in some embodiments, the processing device is a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor implementing other instruction sets or a processor implementing a combination of instruction sets. In some embodiments, the processing device is one or more dedicated processing devices such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), a network processor, or the like. In some embodiments, the controller 109 includes a data storage device (e.g., one or more disk drives and / or solid state drives), a main memory, a static memory, a network interface, and / or other components. In some embodiments, the controller 109 executes instructions to perform any one or more of the methods or processes described herein. The instructions are stored on a computer-readable storage medium, which includes one or more of the main memory, the static memory, the auxiliary storage, and / or the processing device (during the execution of the instructions). In some embodiments, the controller 109 receives signals from the factory interface robot 111 and the wafer transfer chamber robot 112 and sends control to the factory interface robot and the wafer transfer chamber robot.

[0031] Figure 1 Schematically shows the transfer of the contents 110 (e.g., a process fitting ring coupled to a process fitting ring carrier) into the processing chamber 107. According to one aspect of the present disclosure, the contents 110 are removed from the enclosure system 130 via the factory interface robot 111 located in the factory interface 101. The factory interface robot 111 transfers the contents 110 through one of the first vacuum ports 103a, 103b and transfers them into the corresponding degassing chamber 104a, 104b. The transfer chamber robot 112 located in the transfer chamber 106 removes the contents 110 from one of the degassing chambers 104a, 104b via the second vacuum port 105a or 105b. The transfer chamber robot 112 moves the contents 110 into the transfer chamber 106 and transfers the contents 110 in this transfer chamber to the processing chamber 107 via the corresponding port 108. Although not shown for clarity in Figure 1 the transfer of the contents 110 includes the transfer of a process fitting ring disposed on a process fitting ring carrier, the transfer of an empty process fitting ring carrier, the transfer of a placement verification wafer, etc.

[0032] Figure 1 FIG. illustrates an example of transferring a content 110. However, other examples are also contemplated. In some examples, it is contemplated that the enclosure system 130 (e.g., via a load port mounted to the transfer chamber 106) is coupled to the transfer chamber 106. The content 110 is loaded from the transfer chamber 106 into the processing chamber 107 by the transfer chamber robot 112. Additionally, in some embodiments, the content 110 is loaded in a substrate support pedestal (SSP). In some embodiments, relative to the illustrated SSP, additional SSPs are positioned in communication with the factory interface 101. In a manner contrary to any of the ways described herein, the processed content 110 (e.g., a used process fitting ring) is removed from the processing system 100. When utilizing multiple enclosure systems 130 or a combination of the enclosure system 130 and the SSP, in some embodiments, one SSP or enclosure system 130 will be used for the unprocessed content 110 (e.g., a new process fitting ring), while another SSP or enclosure system 130 will be used for receiving the processed content 110 (e.g., a used process fitting ring).

[0033] The processing system 100 includes chambers such as the factory interface 101 (e.g., an equipment front end module (EFEM)), the transfer chamber 106, and adjacent chambers (e.g., the load port 128, the enclosure system 130, the SSP, a degassing chamber 104 such as a load lock, the processing chamber 107, or the like) adjacent to the factory interface 101 and / or the transfer chamber 106. One or more of the sealed chambers (e.g., each of the sealed chambers). The adjacent chambers are sealed to the factory interface 101 and / or the transfer chamber 106. In some embodiments, an inert gas (e.g., one or more of nitrogen, argon, neon, helium, krypton, or xenon) is provided to one or more of the chambers (e.g., the factory interface 101, the transfer chamber 106, and / or the adjacent chambers) to provide one or more inert environments. In some examples, the factory interface 101 is an inert EFEM that maintains an inert environment (e.g., an inert EFEM microenvironment) within the factory interface 101 such that a user does not need to enter the factory interface 101 (e.g., the processing system 100 is configured to have no manual access ports within the factory interface 101).

[0034] In some embodiments, an air flow (e.g., providing an inert gas, providing nitrogen, discharging a gas to provide a vacuum environment, etc.) is provided to and / or from one or more chambers (e.g., the factory interface 101, the transfer chamber 106, the adjacent chambers, etc.) of the processing system 100.

[0035] In some embodiments, the gas flow is greater than the leakage through one or more chambers to maintain a positive pressure within the one or more chambers. In some embodiments, the discharged gas flow is greater than the leakage through one or more chambers to maintain a negative pressure within the one or more chambers.

[0036] In some embodiments, the inert gas within the factory interface 101 is recycled. In some embodiments, a portion of the inert gas is discharged. In some embodiments, the gas flow of the non-recycled gas entering one or more chambers is greater than the discharged gas flow and the gas leakage to maintain a positive pressure of the inert gas within the one or more chambers. In some embodiments, the discharged gas flow exiting one or more chambers is greater than the gas leakage (e.g., the gas flow) entering one or more chambers to maintain a negative pressure (e.g., a vacuum environment) within the one or more chambers.

[0037] In some embodiments, one or more chambers are coupled to one or more valves and / or pumps to provide a gas flow into and / or out of the one or more chambers. The processing device (e.g., of the controller 109) controls the gas flow into and out of the one or more chambers. In some embodiments, the processing device receives sensor data from one or more sensors (e.g., an oxygen sensor, a humidity sensor, a motion sensor, a door actuation sensor, a temperature sensor, a pressure sensor, etc.), and determines the flow rate of the inert gas flowing into the one or more chambers and / or the flow rate of the gas flowing out of the one or more chambers based on the sensor data.

[0038] According to the embodiments described herein, one or more components (e.g., metal components, aluminum components) within the processing system 100 (e.g., the portion of the processing system 100 under vacuum) are produced by performing method 300A or 300B to remove hydrocarbons to produce a trimmed surface. In some instances, the factory interface, the load port, the load lock, the cassette, the SSP, the transfer chamber, and / or the processing chamber have been processed according to the embodiments described herein. The trimmed surface has an average surface roughness of up to 32 Ra micro-inches. By removing hydrocarbons from the surfaces of one or more of these components of the processing system 100, the organic contamination within the processing system 100 is greatly reduced.

[0039] Figure 2A FIG. Cross-sectional view of a processing system 200A according to certain embodiments (e.g., Figure 1 the processing system 100). Figure 2B FIG. Cross-sectional view of a processing system 200B according to certain embodiments (e.g., Figure 1 the processing system 100). In some embodiments, the processing systems 200A and 200B are the same processing system 200.

[0040] The processing system 200 includes a factory interface 201 (e.g., Figure 1 factory interface 101). The processing system 200 includes a chamber coupled to the factory interface 201. For example, the factory interface 201 is coupled to a housing system 202 (e.g., a substrate housing system, Figure 1 housing system 102), a load port 228 (e.g., Figure 1 load port 128), a load lock system 204 (e.g., Figure 1 degassing chambers 104a and / or 104b), a transfer chamber 206 (e.g., Figure 1 transfer chamber 106), and / or a processing chamber 107 (e.g., Figure 1 processing chamber 107) of one or more. The factory interface 201 includes a robot arm 211 (e.g., Figure 1 factory interface robot 111), and the transfer chamber 206 includes a robot arm 212 (e.g., Figure 1 transfer chamber robot 112). One or more portions of the processing system 200 are placed in an open position or a closed position (e.g., a sealed position). An airflow is provided to and / or from one or more portions of the processing system 200 (e.g., in response to being in an open position, in response to being in a closed position, in response to transitioning between an open and a closed position, based on sensor data, and / or via a port).

[0041] In response to the door 230 being coupled (e.g., sealed) to the housing system 202, the housing system 202 is in a closed position.

[0042] The load port 228 is configured to be placed in a closed position in certain cases. For example, a door carrier 232 is coupled (e.g., sealed) to a first portion of the load port 228, and the housing system 202 and / or the door 230 are coupled (e.g., sealed) to a second portion of the load port 228. In some embodiments, the door carrier 232 is configured to place the door 230 in a closed position and an open position (e.g., the door carrier 232 is configured to remove the door 230 from the housing system 202 and secure the door 230 to the housing system 202).

[0043] In response to the doors 203 and 205 being sealed to the load lock system 204, the load lock system 204 is in a closed position. In some embodiments, the load lock system 204 has a plurality of load lock chambers 236, and each load lock chamber 236 has a corresponding door 203, 205.

[0044] In response to the door 234 being coupled (e.g., sealed) to the processing chamber 207, the processing chamber 207 is in a closed position.

[0045] In response to the door carrier 232 (or door 230) and door 203 being in the closed position, the factory interface 201 is in the closed position. In response to doors 205 and 234 being in the closed position, the transfer chamber 206 is in the closed position.

[0046] In response to the door carrier 232 and / or door 230 being in the open position (e.g., see Figure 2B ), the robotic arm 211 transfers contents (e.g., wafers) from the enclosure system 202 to different parts of the processing system 200 (e.g., transfers to the factory interface 201, transfers to the load lock system 204, transfers to the storage area, cooling station, metrology station, etc.). In response to door 234 being in the open position (e.g., see Figure 2B ), the robotic arm 212 transfers contents (e.g., wafers) from the processing chamber 207 to another part of the processing system 200 (e.g., transfers to the transfer chamber 206, transfers to the load lock system 204, etc.).

[0047] One or more parts of the processing system 200 include one or more corresponding ports (e.g., inlets, outlets, etc.). One or more flow devices (e.g., recirculation pumps, discharge pumps, insertion pumps, valves, etc.) are coupled to the ports.

[0048] In some embodiments, the processing device (e.g., Figure 1 controller 109) causes a gas flow (e.g., supplies non-recirculated gas, supplies recirculated gas, discharges gas, etc.) through the ports. In some embodiments, the processing device receives sensor data (e.g., oxygen sensors, humidity sensors, door actuation sensors, temperature sensors, etc.) and causes a gas flow through one or more ports based on the sensor data.

[0049] In some embodiments, a first environment (e.g., a vacuum environment) is provided in the transfer chamber 206 and the processing chamber 207. In some embodiments, a first environment (e.g., a vacuum environment) is provided in the load lock system 204 before opening the load lock system 204 to the transfer chamber 206 (e.g., via door 205).

[0050] In some embodiments, a second environment (e.g., a positive pressure environment, an atmospheric environment, an inert gas environment, a vacuum environment, etc.) is provided in the factory interface 201, the enclosure system 202, and the load port 228. In some embodiments, a second environment is provided in the load lock system 204 before opening the load lock system 204 to the factory interface 201 (e.g., via door 203).

[0051] In some embodiments, all surfaces of a metal component (e.g., an aluminum component) that is part of a vacuum environment (e.g., transfer chamber 206, processing chamber 207, load lock system 204, door 205, door 203, robotic arm 212, etc.) are produced by performing Method 300A or 300B to remove hydrocarbons to produce a trimmed surface. The trimmed surface has an average surface roughness of up to 32 Ra micro-inches. By removing hydrocarbons, organic contamination within the vacuum environment of the processing system 200 (e.g., and other parts of the processing system 200) is greatly reduced.

[0052] Figures 3A - 3B FIGS. 300A - 300B illustrate methods for producing a trimmed surface of a metal component of a processing system according to certain embodiments. One or more operations of one or more of Methods 300A - 300B are performed by a manufacturing apparatus. In some embodiments, the same manufacturing apparatus is used for multiple operations and / or different operations are performed by different manufacturing apparatuses. In some embodiments, the manufacturing apparatus is controlled by processing logic including hardware (e.g., circuitry, dedicated logic, programmable logic, microcode, processing devices, etc.), software (such as instructions running on a processing device, a general purpose computer system, or a dedicated machine), firmware, microcode, or a combination of the foregoing. In some embodiments, one or more of Methods 300A - 300B are controlled by a controller (e.g., Figure 1 controller 109 of Figure 4B ; controller 409 of Figure 1 ). In some embodiments, one or more of Methods 300A - 300B are controlled by a server device (e.g., the server device communicates with Figure 1 controller 109 of Figure 4B ; controller 409 of

[0053] Although shown in a particular order or sequence, the order of operations may be modified unless otherwise specified (e.g., blocks 308 - 310 of method 300A may occur after block 312 of method 300A). One or more operations may be combined (e.g., blocks 304 - 306 of method 300A may be combined). One or more operations may be repeated (e.g., blocks 304 - 308 of method 300A may be repeated). Accordingly, the illustrated embodiments should be understood only as examples, and the illustrated operations may be performed in a different order and some operations may be performed in parallel. Additionally, in various embodiments, one or more operations may be omitted (e.g., one or more of blocks 306 - 310 of method 300A). Thus, not all operations are used in every embodiment.

[0054] Referring Figure 3A to method 300A of, at block 302, a metal component is received (e.g., an aluminum component, a stainless - steel component, a titanium component, a vacuum - chamber component, an aluminum - alloy component, a stainless - steel - alloy component, a titanium - alloy component, etc.), the metal component including an original surface (e.g., see Figure 4A metal component 400A of, Figure 4B device 450A of). The original surface includes a metal substrate (e.g., an aluminum substrate, an aluminum - alloy substrate), a first native oxide (e.g., an oxide layer) disposed on the metal substrate, and a hydrocarbon (e.g., hydrocarbon particles disposed in and on the oxide layer) disposed on the metal substrate.

[0055] In some embodiments, the metal component (e.g., the metal substrate, the aluminum substrate) is a raw monolith. In some embodiments, the metal component (e.g., the metal substrate, the aluminum substrate) is an aluminum alloy. In some examples, the metal component (e.g., the metal substrate, the aluminum substrate) includes one or more of the following: aluminum 6061 - T6, aluminum 6062 - T6, any of the 6000 series (e.g., 6000 - series aluminum alloy), aluminum 5052, any of the 5000 series (e.g., 5000 - series aluminum alloy), ACP 5080RS, 5080R (ACP 5080R), 5080S (ACP5080S), Alpase 5083 M - 5 TM , PCP 5083 and / or Vista Duramold - 5 TMAlternatively, in some embodiments, other metal components that are not aluminum are received and processed. In some embodiments, the metal component is stainless steel, 300 series stainless steel and nitronic alloy, 400 series stainless steel, 17-4PH and 440C stainless steel, stainless steel alloy, titanium, and / or titanium alloy. The metal component may be configured to be exposed to (e.g., for use in) an ultra-high vacuum (UHV) environment (e.g., transfer chamber, load lock, processing chamber).

[0056] In some embodiments, the metal component received in block 302 is raw stock (e.g., an aluminum block).

[0057] At block 304, the raw surface of the metal component is processed to produce a machined surface (e.g., see Figure 4A metal component 400B of Figure 4B device 450B). In some embodiments, block 304 processes the metal component (e.g., raw stock, aluminum block) into a shaped metal component (e.g., part of a processing chamber, process fitting ring, load lock, door, transfer chamber, robotic arm, LCF device, etc.) via one or more machining processes to produce a machined surface. In some embodiments, the machining of block 304 includes computer numerical control (CNC) equipment, a mill, etc., and this machining performs one or more cutting passes, each pass removing a portion of the raw surface to produce a machined surface. In some embodiments, block 304 includes a grinding process (e.g., dithering, bead blasting, sanding, etc.). Dithering surface treatment is a roughening surface treatment that uses an orbital sander to bring a grinding pad into contact with the surface and moves the grinding pad in a random orbit motion to produce dithering (e.g., random-matte, wiggle pattern) surface finishing. In the roughening surface treatment, the abrasive particles polish the surface to remove machine marks and for aesthetic purposes. In some embodiments, block 304 does not have a grinding process (e.g., dithering, bead blasting, sanding, etc.). In some embodiments, block 304 processes the raw surface via grinding surface machining. In some embodiments, block 304 processes the raw surface via non-grinding surface machining. In some embodiments, different thicknesses of material are removed based on the type of metal component to be produced by method 300A.

[0058] In some embodiments, at block 304, a first native oxide (e.g., or at least a portion of the first native oxide) and a first portion of a hydrocarbon are removed from the metal substrate. The processed surface comprises the metal substrate that does not have the first native oxide and does not have the first portion of the hydrocarbon. In some embodiments, at block 304, a portion of the metal substrate is removed.

[0059] At block 306, the metal component is exposed to the atmosphere to deposit a second native oxide on the metal substrate of the processed surface of the metal component (e.g., see Figure 4A metal component 400C of Figure 4B device 450C of

[0060] At block 308, the metal component is cleaned (e.g., via a cleaner) (e.g., see Figure 4A metal component 400D of Figure 4B device 450D of

[0061] At block 310, the metal component is surface-treated (e.g., see Figure 4A metal component 400A of Figure 4B device 450A of

[0062] At block 312, a surface finish is performed on the machined surface of the metal component to produce a finished surface of the metal component (e.g., see Figure 4A metal component 400E of Figure 4B device 450E of

[0063] ). In some embodiments, the surface finish is a grinding surface finish (e.g., roughening surface finish, vibratory mechanical surface finishing). In some embodiments, the surface finish is a non - grinding surface finish (e.g., non - roughening surface finish, non - vibratory mechanical surface finishing). In some embodiments, the non - grinding surface finish (e.g., block 312) occurs before the surface treatment (e.g., block 310). In some embodiments, another iteration of cleaning (e.g., block 308) occurs after the surface finish (e.g., block 312), then the surface treatment (e.g., block 310) occurs, and then another iteration of cleaning (e.g., block 308) occurs after the surface treatment (e.g., block 310).

[0064] In some embodiments, the finished surface has one or more of an average surface roughness of up to 32 Ra micro - inches. In some embodiments, the finished surface has one or more of an average surface roughness of about 30 - 34 Ra micro - inches, about 22 - 32 Ra micro - inches, about 15 - 30 Ra micro - inches, about 16 - 32 Ra micro - inches, about 30 - 40 Ra micro - inches, and / or the like.

[0065] In some embodiments, at block 312, a second native oxide and a second portion of the hydrocarbons are removed (e.g., no hydrocarbons are disposed on the aluminum substrate of the aluminum component) to produce a finished surface. In some embodiments, at block 312, a portion of the metal substrate is removed. In some embodiments, the finished surface has one or more of an increased reflectivity and / or a decreased average surface roughness (e.g., compared to the machined surface, compared to a conventional surface, compared to a vibratory surface, etc.).

[0066] In some embodiments, surface machining (e.g., non-abrasive surface machining) of a machined surface removes a source of contamination (e.g., hydrocarbons) from a finished surface of a metal component. In some embodiments, the metal component (e.g., the finished surface of the metal component) is produced without mechanical abrasive surface treatment (e.g., roughening surface treatment, shaking surface treatment, random matte surface treatment, orbital sander tool surface treatment, abrasive particle polishing surface treatment, polishing surface treatment, sandblasting surface treatment, and / or the like).

[0067] In some embodiments, surface machining (e.g., non-abrasive surface machining) is performed using a machine that moves a rotating cutter head across the surface of the component being processed until some or all of the surface of the component is cut. In some embodiments, surface machining is performed, for example, using a computer numerical control (CNC) device, a grinder, etc., and the surface machining performs one or more cutting passes, each cutting pass removing a portion of the surface.

[0068] In some embodiments, surface machining (e.g., non-abrasive) surface machining includes diamond cutting. In some embodiments, diamond cutting is performed using a diamond cutting tool for one or more cutting passes to cut off a portion of the metal component. In some embodiments, diamond cutting is performed at a high speed with a small cutting depth. In some embodiments, diamond cutting is performed via a polycrystalline diamond (PCD) cutter head (e.g., the tip of the cutter). In some embodiments, diamond cutting is performed via a tip (e.g., a PCD cutter head) used in a ball mill, an end mill, a fly grinder, a bore / drill, and / or a lathe application. In some embodiments, surface machining (e.g., non-abrasive surface machining) is performed via a diamond blade that applies one or more of face milling, ball milling, or end milling to the machined surface of the metal component to produce a finished surface. In some embodiments, diamond cutting is performed via a single mount diamond blade. Surface machining (e.g., non-abrasive surface machining, diamond cutting) can be high speed, thin cut, high feed rate, and can remove less than about half a millimeter thickness of the metal component.

[0069] In some embodiments, surface machining (e.g., non-abrasive surface machining) includes carbide bi-mount machining (e.g., with a carbide tip of the tool nose diameter). In some embodiments, carbide bi-mount machining is performed via a polycrystalline diamond (PCD) tip (e.g., the tool tip). In some embodiments, carbide bi-mount machining is performed at low to medium speeds and small to large depths of cut (e.g., as compared to high speed and small depths of cut in diamond turning). In some embodiments, carbide bi-mount machining is performed via a tip (e.g., a PCD tip) used in a ball mill, end mill, fly cutter, boring machine / drilling machine, and / or lathe application.

[0070] In some embodiments, surface machining (e.g., non-abrasive surface machining) includes machining of light finishing cuts (e.g., not aggressive cuts) at low speed. In some embodiments, the machining of light finishing cuts is performed at low speed, at a low feed rate, light speed, and light depth (e.g., via a carbide tip, via a straight end mill, etc.). In some embodiments, the machining of light finishing cuts at low speed is the final cut in surface machining (e.g., non-abrasive surface machining) to obtain a specific finish and a specific surface roughness. In some embodiments, the depth of cut is very small at a high feed rate (e.g., as compared to other types of non-abrasive surface machining) to rapidly remove chips from the machined surface. In some embodiments, the machining of light finishing cuts is performed by making one or more cutting passes with a cutting tool (e.g., sintered carbide, tungsten carbide, titanium carbide, PCD, diamond, carbide, cubic boron nitride, and / or the like) to cut off a portion of a metal component.

[0071] In some embodiments, surface machining (e.g., non-abrasive surface machining) includes one or more of the following: diamond turning at a first speed (e.g., high speed); carbide bi-mount machining at a second speed lower than this first speed (e.g., low to medium speed); and / or machining of shallow finishing cuts at a third speed lower than this first speed (e.g., and lower than this second speed) (e.g., low speed).

[0072] In some embodiments, the surface machining (e.g., non-abrasive surface machining) speed (e.g., cutting speed) of the metal component is from 400 to 5000 surface feet per minute (SFM). In some embodiments, the surface machining (e.g., non-abrasive surface machining) speed (e.g., cutting speed) of the metal component is from 600 to 3000 SFM. In some embodiments, the surface machining (e.g., non-abrasive surface machining) speed (e.g., cutting speed) of the metal component is from 1000 to 5000 SFM.

[0073] In some embodiments, diamond cutting machining is performed at 1000 to 5000 SFM; carbide double-seat machining is performed at 600 to 3000 SFM; and finishing light cuts are performed at 400 to 1000 SFM. In some embodiments, the speed of diamond cutting machining is greater than the speed of carbide double-seat machining, and the speed of carbide double-seat machining is greater than the speed of finishing light cuts.

[0074] In some embodiments, the trimmed surface is generally flat and / or smooth. In some embodiments, the trimmed surface minimizes the capture of hydrocarbons and other contaminants. In some embodiments, the trimmed surface is close to the virgin material (e.g., the original surface) free of contaminants (e.g., hydrocarbons), and provides defect and contamination control. In some embodiments, the trimmed surface has a low Ra finish. In some embodiments, after performing surface machining (e.g., non-abrasive surface machining), the final surface finish is achieved without performing any polishing (e.g., abrasive polishing) on the surface.

[0075] In some embodiments, the trimmed surface of the metal component is one or more of the following: the first inner surface of the transfer chamber of a substrate processing system; the second inner surface of a processing chamber coupled to the transfer chamber; the third inner surface of a load lock coupled to the transfer chamber; or the outer surface of a robot (e.g., the outer surface of a robot blade or a robot wrist) disposed in the transfer chamber (e.g., and / or the processing chamber).

[0076] Figure 3B FIG. 300B illustrates a method of producing a trimmed surface of a metal component of a processing system according to certain embodiments. In some embodiments, the metal component is aluminum, stainless steel, titanium, or an alloy of the foregoing. In some embodiments, the metal component is a robot, a sidewall of a chamber (the chamber being, for example, a transfer chamber, a load lock chamber, a processing chamber), and / or a metal component to be disposed within a vacuum environment (e.g., a load lock, a transfer chamber, and / or a processing chamber).

[0077] Refer to Figure 3BMethod 300B, at block 320, performs machining of the metal component in the atmosphere. In some embodiments, block 320 is similar to blocks 304 - 306 of method 300A. Machining of the metal component can include one or more of a machine tool operation, a lathe operation, an end milling operation, using one or more types of cutting tools on the machine tool to obtain the shape of the metal component, performing machining operations to produce features (e.g., holes, blind holes, wrinkles, non-fusion seams, etc.) and / or the like. The machining (and the number of machining iterations) can depend on the complexity and / or intricacy of the metal component, the size of the metal component, the thickness of the material removed (e.g., larger pieces or smaller pieces) and / or the like. The machining can be rough cutting or semi-rough cutting. In some embodiments, the machining removes material without causing chatter of the machining tool. Machining a smaller metal component or a metal component with more features can remove less material and / or use less pressure (e.g., so as not to deform the shape of the metal component, so as not to affect the part definition) compared to a larger metal component or a metal component with fewer features.

[0078] At block 322, the metal component is cleaned. In some embodiments, the cleaning is performed with a cleaning agent such as alcohol, acetone, hydrochloric acid, a surface cleaner, etc. In some embodiments, performing the cleaning includes dipping the metal component into the cleaning agent (e.g., the cleaning agent includes HNO3). In some embodiments, block 322 is similar to block 308 of method 300A.

[0079] At block 324, it is determined whether additional machining is to be performed. If additional machining is to be performed, the process returns to block 320. If no additional machining is performed, the process continues to block 326.

[0080] In some embodiments, method 300B includes multiple machining iterations (e.g., about 2 to 4 passes with the machining tool, each pass removing a portion of the metal component). In some instances, the first iteration of the machining (e.g., the first iteration of block 320) is rough machining, the second iteration of the machining (e.g., the second iteration of block 320) is semi-rough machining, the third iteration of the machining (e.g., the third iteration of block 320) is a profiling pass, and the fourth iteration of the machining (e.g., the fourth iteration of block 320 or block 326) is a finishing pass. Different iterations of the machining can be performed by the same machine or different machines. In some embodiments, a cleaning operation is performed between each machining operation in the machining operations. In some embodiments, no cleaning operation is performed between two or more machining operations.

[0081] In some embodiments, the surface of the metal component remains wet between iterations of the machining (e.g., between iterations of block 320, between block 320 and block 326, etc.). In some embodiments, keeping the metal component wet prevents the machining fluid and residues from drying on the metal component.

[0082] At block 326, surface machining of the metal component is performed. In some embodiments, the surface machining is roughening (e.g., dithering, sandblasting, etc.) surface machining. In some embodiments, the surface machining is non-roughening (non-dithering) surface machining. Block 326 may be similar to block 312 of method 300A. The surface machining (e.g., roughening surface machining, non-roughening surface machining) may be a final cut, a finish cut, and / or a skim to produce a trimmed surface (e.g., a smooth surface) (e.g., removing less material than block 320). Compared to the machining of block 320, the surface machining of block 326 (e.g., non-roughening surface machining) may take longer (e.g., additional thinner passes to obtain a finer surface roughness). In some embodiments, the surface machining (e.g., non-roughening surface machining) is diamond cutting (e.g., very low roughness). In some embodiments, method 300B has no contaminated process operations (e.g., no dithering operation, no sandblasting operation, no hot spraying operation, etc.).

[0083] At block 328, the metal component is cleaned. In some embodiments, block 328 is similar to block 308 of method 300A and / or block 322 of method 300B.

[0084] At block 330, surface treatment of the metal component is performed. In some embodiments, the surface treatment includes one or more of the following steps: immersing the metal component in an acid etching solution (e.g., HF and / or HNO3), polishing the metal component, depositing material on the surface of the metal component, electroplating the surface of the metal component, and / or the like. In some embodiments, block 330 is similar to block 310 of method 300A. The surface treatment may remove the upper layer of the metal component (e.g., deep cleaning). In some embodiments, the surface treatment removes oxides (e.g., alumina), residues from cleaning, impurities from previous operations (e.g., previous baths), organic matter, and / or the like.

[0085] At block 332, the metal component is cleaned. In some embodiments, in response to the surface treatment of block 330, there are residues on the metal component, and the cleaning at block 332 removes the residues. In some embodiments, block 332 is similar to block 308 of method 300A and / or block 322 of method 300B.

[0086] At block 334, drying of the metal component is performed (e.g., blow drying, bake drying) (e.g., to produce a trimmed surface). In some embodiments, drying includes blow drying the metal component and / or bake drying (e.g., drying at a temperature above ambient temperature) the metal component at about 80 to about 200 degrees Celsius (e.g., in an inert gas, in a vacuum, etc.) (e.g., with an inert gas).

[0087] Figure 4A FIG. illustrates a cross-sectional view of metal components 400A - 400F (e.g., aluminum components) of a processing system (e.g., Figure 1 processing system 100 of Figures 2A - 2B processing system 200 of) according to certain embodiments. In some embodiments, different operations of method 300 occur and / or different equipment of Figure 4B is used between different metal components 400A - 400F.

[0088] Metal component 400A has an original surface that includes a metal substrate 410, an intrinsic oxide 420 (e.g., an intrinsic oxide layer) disposed on the metal substrate 410, and a hydrocarbon 430 (e.g., hydrocarbon particles) disposed on the metal substrate 410 (e.g., disposed within and on the intrinsic oxide layer). In some embodiments, metal component 400A is contaminated with hydrocarbon 430 due to various incoming sources (e.g., encapsulation, handling, transportation, etc.). In some embodiments, the intrinsic oxide 420 is on the metal substrate 410 in response to metal component 400A being exposed to the atmosphere. In some embodiments, metal component 400A responds to Figure 3A block 302 of method 300A of

[0089] In some embodiments, metal component 400A is an original piece of metal (e.g., an aluminum ingot). Figure 3A Metal component 400B (e.g., in response to recent grinding of the surface) has a processed surface that includes the metal substrate 410 and a portion of the hydrocarbon 430 that was on the metal substrate 410 of metal component 400A. In some embodiments, metal component 400B responds to

[0090] The metal component 400C has a machined surface that is exposed to the atmosphere. In some embodiments, the metal component 400C responds to Figure 3A block 306 of method 300A. In response to exposure to the atmosphere, the metal component 400C has an intrinsic oxide 420. The hydrocarbon 430 of the metal component 400B is disposed on the metal substrate 410 of the metal component 400C, within and on the native oxide 420.

[0091] The metal component 400D has a machined surface that has been exposed to the atmosphere and cleaned (e.g., via a cleaner). In some embodiments, the metal component 400D responds to Figure 3A block 308 of method 300A. In response to being cleaned, a portion of the hydrocarbon 430 (e.g., the hydrocarbon disposed on the native oxide 420) has been removed, while a portion of the hydrocarbon 430 (e.g., the hydrocarbon disposed within the native oxide 420) remains on the metal substrate 410.

[0092] The metal component 400E has a machined surface that has been exposed to the atmosphere, cleaned, and surface treated (e.g., etched with hydrogen fluoride (HF) or nitric acid (HNO3), polished, deposited, electroplated, etc.). In some embodiments, the metal component 400E responds to Figure 3A block 310 of method 300A. In response to the surface treatment, at least a portion of the hydrocarbon 430 remains on the metal substrate 410 (e.g., within the native oxide 420).

[0093] The metal component 400F has a trimmed surface. In some embodiments, the metal component 400F responds to Figure 3A block 312 of method 300A. The trimmed surface does not include the hydrocarbon 430 (e.g., and does not include the native oxide 420). The trimmed surface is produced by performing surface machining (e.g., non-abrasive surface machining such as non-chattering, non-roughening) on the machined surface of the metal component 400 to remove the hydrocarbon 430. The trimmed surface has an average surface roughness of up to 32 Ra micro-inches. By removing the hydrocarbon, organic contamination within the substrate processing system (e.g., the vacuum portion of the substrate processing system, Figure 1 processing system 100 of Figures 2A - 2B processing system 200 of etc.) is greatly reduced.

[0094] In some embodiments, corresponding operations of one or more of the metal components 400A - 400E are skipped or rearranged to produce a trimmed surface of the metal component 400F. In some embodiments, one or more of the operations (e.g., cleaning, surface treatment) of the metal components 400D - 400E are skipped or rearranged. In some instances, the metal component 400F is not cleaned or surface treated. In some instances, cleaning and / or surface treatment occurs after a trimmed surface of the metal component 400F has been produced by performing surface machining (e.g., cleaning and / or surface treatment does not occur prior to surface machining).

[0095] Figure 4B FIG. illustrates a system 440 for producing a trimmed surface of a metal component 400 (e.g., an aluminum component) according to certain embodiments.

[0096] System 440 includes devices 450A - 450F and a controller 490. In some embodiments, system 440 includes a transfer device 460 (e.g., a robotic arm, a conveyor, etc.) to move the metal component between multiple sets of devices 450A - 450F. In some embodiments, one or more of the multiple sets of devices 450A - 450F move to process the metal component. In some embodiments, one or more of the multiple sets of devices 450A - 450F are combined. The controller 490 controls the devices 450A - 450F and the transfer device 460. In some embodiments, the controller 490 has the same or similar functions as Figure 1 controller 190.

[0097] In some embodiments, one or more of the multiple sets of devices 450A - 450F are set in a clean and organic - free environment to prevent airborne contamination. In some embodiments, intermittent cleaning occurs during part processing (e.g., before, during, and / or after using devices 450B and / or 400F) to minimize the accumulation of cross - contamination. In some embodiments, low - outgassing materials (e.g., lubricants, O - rings, etc.) are used (e.g., for high - vacuum applications). In some embodiments, materials without organic stains are used (e.g., cleanroom microfiber wipes, wipes composed of continuous filament microdenier, polyester / nylon textile wipes, and / or wipes that enhance absorbency and particle contaminant removal, etc.).

[0098] Device 450A receives a metal component 400A having an original surface that includes a metal substrate 410, an intrinsic oxide 420 disposed on the metal substrate 410, and a hydrocarbon 430 disposed on the metal substrate 410. See Figure 3A block 302.

[0099] Device 450B processes the original surface to remove the native oxide 420 and a first portion of the hydrocarbons 430 from the metal substrate 410 to produce a processed surface of the metal component 400B. See Figure 3A box 304 of

[0100] In some embodiments, device 450C exposes the metal component 400B to the atmosphere to deposit (e.g., form) the native oxide 420 on the metal substrate 410 of the metal component 400B. See Figure 3A box 306 of . In some embodiments, the metal component 400B is exposed to the atmosphere without using device 450C.

[0101] Device 450D cleans (e.g., via a cleaning agent) the metal component 400C to remove a second portion of the hydrocarbons 430 from the metal substrate 410. See Figure 3A box 308 of

[0102] Device 450E performs a surface treatment (e.g., etching, polishing, etc.) on the metal component 400D to remove a third portion of the hydrocarbons 430 from the metal substrate 410. See Figure 3A box 310 of

[0103] Device 450F performs a surface machining (e.g., non-abrasive surface machining such as non-chattering, non-roughening) on the processed surface of the metal component 400 to remove the hydrocarbons 430 to produce a trimmed surface. See Figure 3A box 312 of . In some embodiments, device 450F includes a diamond tip, a diamond blade, a diamond point, a diamond single mount, a carbide bi-mount, a carbide tip, a carbide blade, or the like.

[0104] In some embodiments, compared to metal components formed in accordance with the present disclosure, for conventional metal components (e.g., metal components that have undergone roughened surface machining), the wafer stigmata is higher on wafers proximate to the substrate of the metal component (e.g., an aluminum component, a metal component of a processing system) at different temperatures.

[0105] In some embodiments, the number of wafer stigmata on wafers proximate to the substrate of a conventional metal component (e.g., an aluminum component) is much higher than the number of wafer stigmata on wafers of metal components formed in accordance with the present disclosure. In some embodiments, for conventional metal components, an overload point (e.g., the substrate meets a threshold amount of wafer stigmata, the substrate cannot be used, the substrate is to be discarded, and / or the like) of the number of wafer stigmata is reached at elevated temperatures (e.g., above about 100 to about 150 degrees Celsius).

[0106] In some embodiments, proximate to a metal component formed in accordance with the present disclosure (e.g.,Figure 3A Method 300A, Figure 3B Method 300B, the number of wafer stains on the substrate of the metal component (e.g., aluminum component) formed by the metal component 400F is much lower than that of the conventional metal component.

[0107] For conventional metal components, stains are triggered at a lower temperature (e.g., at about 20 to about 40 degrees Celsius) and increase with increasing temperature under vacuum. In some embodiments, for the metal components formed according to the present disclosure, a small stain signal is triggered under vacuum at a higher temperature (e.g., about 100 to about 150 degrees Celsius).

[0108] The examples described herein also relate to an apparatus for performing the methods described herein. In some embodiments, the apparatus is specifically constructed to perform the methods described herein, or includes a general-purpose computer system selectively programmed by a computer program stored in a computer system. In some embodiments, the computer program is stored in a computer-readable tangible storage medium.

[0109] The methods and illustrative examples described herein are not inherently related to any particular computer or other device. In some embodiments, various general-purpose systems are used in accordance with the teachings described herein, or more specialized devices are constructed to perform each of the individual functions, routines, subroutines, or operations of the methods and / or methods described herein. Examples of the structures for various such systems are set forth in the foregoing description.

[0110] The foregoing description sets forth numerous specific details, such as examples of specific systems, components, methods, etc., in order to provide a good understanding of several embodiments of the present disclosure. However, it will be apparent to those skilled in the art that at least some embodiments of the present disclosure may be practiced without these specific details. In other instances, well-known components or methods are not described in detail, or are presented in a simple block diagram format, to avoid unnecessarily obscuring the present disclosure. Thus, the specific details set forth are merely exemplary. Specific embodiments differ from these exemplary details and are still considered to be within the scope of the present disclosure.

[0111] References throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" throughout this specification are not necessarily all referring to the same embodiment. Additionally, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or". When the term "about" or "approximate" is used herein, the term is intended to mean that the presented nominal value is accurate within ±10%.

[0112] As used herein, the terms "above", "below", "between", "disposed on", and "on" refer to the relative position of one layer or component of a material with respect to other layers or components. In some instances, a layer disposed on, above, or below another layer is in direct contact with the other layer or has one or more intermediate layers. In some instances, a layer disposed between two layers is in direct contact with the two layers or has one or more intermediate layers. Similarly, in some instances, a feature disposed between two features is in direct contact with the adjacent features or has one or more intermediate layers.

[0113] Although the operations of the methods herein are shown and described in a particular order, in some embodiments, the order of the operations of each method is changed such that certain operations are performed in the reverse order so that certain operations are at least partially performed concurrently with other operations. In another embodiment, the instructions or sub-operations of the different operations are performed in an intermittent and / or alternating manner.

[0114] It should be understood that the foregoing description is intended to be illustrative and not restrictive. After reading and understanding the foregoing description, many other embodiments will be apparent to those of ordinary skill in the art. Accordingly, the scope of the present disclosure should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims

1. A method, the method comprising the steps of: Machining an original surface of a metal component to remove a first native oxide from a metal substrate of the metal component to produce a machined surface of the metal component, wherein after the machining, a second native oxide forms on the metal substrate of the machined surface of the metal component; After the machining, performing an operation to produce a finished surface of the metal component, the operation comprising surface machining of the machined surface of the metal component to remove the second native oxide.

2. The method according to claim 1, wherein prior to the machining, the original surface comprises the first native oxide and hydrocarbons disposed on the metal substrate.

3. The method according to claim 2, wherein the machining removes at least a portion of the hydrocarbons from the metal substrate.

4. The method according to claim 2, wherein the surface machining removes at least a portion of the hydrocarbons.

5. The method according to claim 2, wherein the operation further comprises surface treating the metal component to remove at least a portion of the hydrocarbons.

6. The method according to claim 1, wherein the operation further comprises performing a cleaning on the metal component.

7. The method according to claim 1, wherein the operation further comprises drying the metal component.

8. The method according to claim 1, wherein in response to the metal component being exposed to the atmosphere, the second native oxide forms on the metal substrate of the machined surface of the metal component.

9. The method according to claim 1, wherein the finished surface of the metal component is produced without mechanical abrasive surface treatment.

10. The method according to claim 1, wherein the finished surface of the metal component has an average surface roughness of up to 32 microinches in average roughness (Ra).

11. A method, the method comprising the steps of: Producing a finished surface of a metal vacuum chamber component of a substrate processing system, the producing step comprising the steps of: Machining an original surface of the metal vacuum chamber component to remove a first native oxide from a metal substrate of the metal vacuum chamber component to produce a machined surface of the metal vacuum chamber component, wherein after the machining, a second native oxide forms on the metal substrate of the machined surface of the metal vacuum chamber component; and The machined surface of the metal vacuum chamber component is surface machined to remove the second native oxide.

12. The method of claim 11, wherein prior to said machining, said original surface comprises said first native oxide and hydrocarbons disposed on said metal substrate.

13. The method of claim 12, wherein said machining removes at least a portion of said hydrocarbons from said metal substrate.

14. The method of claim 12, wherein said surface machining removes at least a portion of said hydrocarbons.

15. The method of claim 12, wherein said generating step further comprises surface treating said metal vacuum chamber component to remove at least a portion of said hydrocarbons.

16. The method of claim 11, wherein said generating step further comprises performing a cleaning on said metal vacuum chamber component.

17. The method of claim 11, wherein said generating step further comprises drying said metal vacuum chamber component.

18. The method of claim 11, wherein in response to said metal vacuum chamber component being exposed to the atmosphere, said second native oxide is formed on said metal substrate of said machined surface of said metal vacuum chamber component.

19. The method of claim 11, wherein said finished surface of said metal vacuum chamber component is produced without mechanical abrasive surface treatment.

20. The method of claim 11, wherein said finished surface of said metal vacuum chamber component has an average surface roughness of up to 32 microinches in average roughness (Ra).

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