Synthesis method of two-dimensional Van der Waals high-entropy telluride

Abstract

The invention discloses a synthesis method of a two-dimensional Van der Waals high-entropy telluride, which comprises the following steps: uniformly mixing vanadium powder, platinum powder, iridium powder, palladium powder, nickel powder and tellurium powder, or uniformly mixing titanium powder, platinum powder, iridium powder, palladium powder, nickel powder and tellurium powder, or uniformly mixing vanadium powder, titanium powder, iridium powder, palladium powder, nickel powder and tellurium powder to obtain powder; and the powder is calcined in vacuum, and the two-dimensional high-entropy alloy material is obtained. A vacuum tube sealing calcination technology is adopted, metal oxidation is effectively prevented in the vacuum environment in the calcination process, and the purity and quality of the alloy are ensured. And finally, the two-dimensional high-entropy alloy material is obtained in a natural cooling or rapid quenching mode. The method is simple and efficient, and the prepared high-entropy alloy material has excellent structural stability and performance and has application potential in different fields.

Description

Technical Field

[0001] The present invention belongs to the technical field of two-dimensional van der Waals material preparation, and particularly relates to a synthesis method of two-dimensional van der Waals high-entropy telluride. Background Art

[0002] Two-dimensional van der Waals materials are layered structures stacked by weak van der Waals forces, and these multi-layer structures can be exfoliated to a thickness of only one or a few atomic layers. They possess unique advantages, including an ultra-high specific surface area, excellent electronic and optical properties, flexibility, and high mechanical strength. In addition, the layers of these materials can be freely stacked to form various heterostructures, thereby achieving various functional regulations. This flexibility makes two-dimensional van der Waals materials have broad application prospects in the fields of electronic devices, optoelectronic devices, energy storage, and catalysis.

[0003] Chalcogenides refer to compounds containing at least one of the Group VI elements sulfur (S), selenium (Se), or tellurium (Te), and have attracted much attention due to their unique chemical and physical properties. Chalcogenides have diverse electronic properties, including insulating, semiconducting, conducting, and superconducting properties, endowing them with broad application potential in electronic devices and energy materials. The compounds formed by them and transition metals have complex and unique bonding structures, bringing many special physical and chemical properties. In addition, chalcogenides exhibit high chemical activity in catalytic reactions and are often used as catalysts or catalyst carriers. Especially two-dimensional layered chalcogenides show excellent performance in the fields of electrocatalysis and photocatalysis. Their high specific surface area is beneficial to improving catalytic activity and stability, and their excellent optoelectronic properties make them important in optoelectronic devices such as solar cells, photodetectors, and light-emitting diodes. By adjusting the ratio of chalcogen elements and other components, the structure and properties of chalcogenides can be regulated to meet different application requirements. These characteristics make chalcogenides have important application prospects in the fields of energy, environment, and electronic materials.

[0004] High-entropy materials are a class of materials composed of five or more elements combined in a near-equimolar ratio, and achieve the high-entropy effect through diversified composition design. Compared with traditional materials, high-entropy materials have significant advantages, including significantly improved mechanical properties such as high strength and high hardness, excellent thermal stability, outstanding corrosion resistance and oxidation resistance, and excellent performance in high-temperature environments. In addition, due to their multi-element combination characteristics, high-entropy materials provide a wider design space, enabling them to show excellent application potential in multiple fields such as structural materials, functional materials, and catalytic materials.

[0005] Two-dimensional high-entropy chalcogenides are a type of layered materials composed of one chalcogen element (such as S, Se, Te) and five or more metal elements (near equimolar ratio). This type of material combines the unique advantages of two-dimensional van der Waals materials, chalcogenides, and high-entropy materials. The layered structure of two-dimensional van der Waals materials provides a high specific surface area and excellent physical and chemical stability, giving it unique advantages in electronic devices and catalytic applications. Chalcogenides exhibit remarkable properties in the optoelectronic and catalytic fields due to their complex electronic structures and rich chemical properties. High-entropy materials generate a high-entropy effect through the random combination of multiple elements, significantly improving the mechanical strength, thermal stability, and corrosion resistance of the materials. Therefore, two-dimensional high-entropy chalcogenides can not only provide more active sites and excellent electron transfer performance but also remain stable under extreme conditions, significantly enhancing the comprehensive performance of the materials. This material shows great potential in the fields of energy conversion, catalysis, and electronic devices, providing broad prospects for the development of new functional materials.

[0006] Traditional methods for preparing high-entropy alloys, such as vacuum melting, are costly, have complex processes, and are prone to producing larger particle sizes of the materials, which is not conducive to the preparation of nanoparticles. The wet chemical method is likely to produce inseparable products due to the use of various high-entropy alloy precursor salts in the early preparation process, reducing the purity of the synthesized target materials. Even the emerging carbon thermal shock (CTS) with a relatively high reaction temperature (about 2000K) and a rapid heating and cooling rate of 105K / s greatly hinders the development of high-entropy alloy preparation technology due to its harsh preparation conditions. Therefore, there is an urgent need to seek a method that can relatively easily and precisely control the composition and structure of high-entropy alloys. Summary of the Invention

[0007] In order to solve the problem that two-dimensional high-entropy alloys cannot be precisely synthesized into two-dimensional layered structures, the purpose of the present invention is to provide a method for synthesizing two-dimensional van der Waals high-entropy tellurides. The steps of this method are simple, easy to implement, and the quality of the synthesized two-dimensional van der Waals high-entropy tellurides is high.

[0008] To achieve the above object, the technical solution adopted by the present invention is as follows:

[0009] A method for synthesizing two-dimensional van der Waals high-entropy tellurides, comprising the following steps:

[0010] Mix vanadium powder, platinum powder, iridium powder, palladium powder, nickel powder, and tellurium powder, or titanium powder, platinum powder, iridium powder, palladium powder, nickel powder, and tellurium powder, or vanadium powder, titanium powder, iridium powder, palladium powder, nickel powder, and tellurium powder evenly to obtain a powder mixture;

[0011] Calcine the powder mixture under vacuum to obtain two-dimensional van der Waals high-entropy tellurides.

[0012] Further, the molar ratios of vanadium powder, platinum powder, iridium powder, palladium powder, nickel powder, and tellurium powder, titanium powder, platinum powder, iridium powder, palladium powder, nickel powder, and tellurium powder, and vanadium powder, titanium powder, iridium powder, palladium powder, nickel powder, and tellurium powder are 1:1:1:1:1:10.

[0013] Further, the vacuum degree during the calcination of the two-dimensional high-entropy alloy is less than 10 -4 Pa.

[0014] Further, the mixing of vanadium powder, platinum powder, iridium powder, palladium powder, nickel powder, and tellurium powder, or titanium powder, platinum powder, iridium powder, palladium powder, nickel powder, and tellurium powder, or vanadium powder, titanium powder, iridium powder, palladium powder, nickel powder, and tellurium powder is carried out by grinding them evenly.

[0015] Further, the calcination is carried out in a high-temperature furnace.

[0016] Further, the conditions for calcination are: first, keep the temperature at 1100 - 1200 °C for 600 min; then cool down to 600 °C, and then cool down to room temperature.

[0017] Further, heat up from room temperature to 1100 - 1200 °C in the range of 1 - 20 °C / min.

[0018] Further, cool down from 1100 - 1200 °C to 600 °C in 50 - 250 min.

[0019] Further, cool down from 600 °C to room temperature in 3 - 4 days.

[0020] A two-dimensional van der Waals high-entropy telluride, wherein the two-dimensional van der Waals high-entropy telluride is a micron-scale bulk crystal material, and its internal structure is a lamellar structure stacked layer by layer through van der Waals forces.

[0021] Compared with the prior art, the present invention has the following beneficial effects:

[0022] In the present invention, the two-dimensional van der Waals high-entropy telluride combines the combined characteristics of high-entropy alloys with the outstanding specific surface area of two-dimensional materials. Through a heat treatment step under vacuum conditions, it ensures the bonding of five metal elements and tellurium element. This method is applicable to different metals and different chalcogen elements, providing a combinatorial strategy and synthesis method for designing new materials with outstanding functions. The two-dimensional van der Waals high-entropy telluride prepared by the present invention is a micron-scale bulk crystal material, with an internal structure of a lamellar structure stacked layer by layer through van der Waals forces, and has excellent structural stability and higher hydrogen evolution activity. The present invention aims to improve the exposure and stability of metal sites to achieve more excellent hydrogen evolution performance. By precisely controlling the vacuum degree of the calcination atmosphere, the adsorption effect of environmental gases on metal and sulfur elements is eliminated. In a high-vacuum environment, the interaction between metal and tellurium elements is strengthened, enabling substances that are non-volatile and easily decomposed to be transformed into high-quality single crystals at temperatures far lower than their direct volatilization temperatures. From a thermodynamic and kinetic perspective, this method is conducive to the bonding between metal atoms and tellurium atoms and promotes the formation of crystals. The present invention can achieve the growth of high-quality two-dimensional high-entropy crystals through simple grinding and mixing, vacuum, and calcination treatments, with simple operation. The raw materials required by this method are widely sourced and have universality.

[0023] Furthermore, the key of the present invention lies in precisely controlling the vacuum degree of the calcination atmosphere, eliminating the influence of environmental gas adsorption on elemental powders, strengthening the interaction between metal elements and tellurium element in a high-vacuum environment, and being more conducive to the bonding between metal atoms and tellurium atoms from a thermodynamic and kinetic perspective. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a physical diagram of the crystal material prepared in Example 1;

[0025] Figure 2 It is the V of the crystal material prepared in Example 1 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 X-ray diffraction pattern (XRD) of Te2;

[0026] Figure 3 It is the Ti of the crystal material prepared in Example 2 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 X-ray diffraction pattern (XRD) of Te2;

[0027] Figure 4 It is the V of the crystal material prepared in Example 3 0.2 Ti 0.2 Pd 0.2 Ir 0.2Ni 0.2 X-ray diffraction pattern (XRD) of Te2;

[0028] Figure 5 For the crystal material V prepared in Example 1 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Aberration-corrected transmission electron microscope (AC-TEM) image of Te2;

[0029] Figure 6 Elemental distribution map (EDS) of the crystal material prepared in Example 1; among them, (a) is V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 TEM image of Te2, (b) is the overlapping map of the distributions of multiple elements, (c) is V, (d) is Pt, (e) is Pd, (f) is Ir, (g) is Ni, (h) is Te;

[0030] Figure 7 Linear sweep voltammetry curve (LSV) of the material in Example 1 under alkaline conditions. Detailed implementation manners

[0031] To facilitate the understanding of the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. The preferred embodiments of the present invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present invention more thorough and comprehensive.

[0032] A synthesis method of a two-dimensional van der Waals high-entropy telluride in the present invention, by adopting a vacuum sealed-tube calcination technique to ensure the purity and quality of the material. The specific steps include: mixing high-purity metal precursors evenly according to the required stoichiometric ratio, loading them into a high-temperature-resistant quartz tube, and sealing them in a vacuum environment. Subsequently, the sealed quartz tube is placed in a high-temperature furnace and calcined at an appropriate temperature to cause the metal precursors to undergo a solid-phase reaction at high temperature and grow to form a high-entropy alloy. The vacuum environment during the calcination process effectively prevents metal oxidation and ensures the purity and quality of the alloy. Finally, the temperature is lowered to obtain a novel two-dimensional high-entropy alloy material. The method of the present invention is simple and efficient, and the prepared high-entropy alloy material has excellent structural stability and hydrogen evolution activity, and is applicable to a variety of high-performance application fields.

[0033] Specifically, V (vanadium powder), Pt (platinum powder), Ir (iridium powder), Pd (palladium powder), Ni (nickel powder) and Te (tellurium powder) are mixed evenly at a molar ratio of 1:1:1:1:1:10, or Ti (titanium powder), Pt (platinum powder), Ir (iridium powder), Pd (palladium powder), Ni (nickel powder) and Te (tellurium powder) are mixed evenly, or V (vanadium powder), Ti (titanium powder), Ir (iridium powder), Pd (palladium powder), Ni (nickel powder) and Te (tellurium powder) are mixed evenly (grinding can be used, or other mixing methods can be used for thorough mixing) to obtain powder materials;

[0034] The powder is placed in a quartz tube and evacuated and sealed to keep the internal air pressure of the quartz tube low, for example, less than 10 -4 Pa.

[0035] Then the quartz tube is placed in a heating device and calcined according to the corresponding procedure. The material grows slowly in the quartz tube, and high-quality two-dimensional van der Waals high-entropy telluride is obtained after cooling. The two-dimensional van der Waals high-entropy telluride is a micron-scale bulk crystal material, and its internal structure is a lamellar structure stacked layer by layer through van der Waals forces.

[0036] Among them, the heating device is a tube furnace, and the maximum temperature of the tube furnace is 1400 °C.

[0037] The conditions for calcination are: the calcination temperature is set to rise from room temperature to 1100 - 1200 °C at a rate of 1 - 20 °C / min, and keep the temperature for 600 min; then cool down to 600 °C in 50 - 250 min, and finally cool down to room temperature slowly in 3 - 4 days to avoid defects in the internal structure of the material.

[0038] Example 1

[0039] A method for synthesizing a two-dimensional van der Waals high-entropy telluride of the present invention includes the following steps:

[0040] S1: Weigh V, Pt, Ir, Pd, Ni and Te according to a molar ratio of 1:1:1:1:1:10, and grind them thoroughly in a glove box to make them mixed evenly to obtain powder materials;

[0041] S2: Put the powder material in step S1 at the bottom raw material end of a single-end open quartz tube, and use a mechanical pump and a molecular pump to pump air to reduce the air pressure in the tube to a certain negative air pressure (for example, 10 -4 Pa), and then use a vacuum tube sealing machine and a hydrogen-oxygen flame sealing machine to seal the tube;

[0042] S3: Calcinate the quartz tube obtained in step S2 to obtain a two-dimensional high-entropy alloy material, that is, a two-dimensional van der Waals high-entropy telluride. The two-dimensional van der Waals high-entropy telluride crystal material V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni0.2 Te2 uses NiTe2 as the control model. V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Te2 is a regular flaky crystal block that can stably exist in air. Corresponding nanoscale ultrathin materials can be obtained through methods such as ultrasonic exfoliation or electrochemical exfoliation.

[0043] Among them, the calcination temperature is set to rise from room temperature to 1150 °C at a rate of 10 °C / min and hold for 600 min; then cool to 600 °C in about 150 min, and then slowly cool to room temperature in 6000 min.

[0044] Figure 1 For the successfully prepared crystal material V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 The physical picture of Te2 shows that the entire spherical crystal is covered by layers of flaky crystals, which is very consistent with the typical characteristics of two-dimensional van der Waals materials.

[0045] From the X-ray diffraction pattern ( Figure 2 ) it can be seen that the two-dimensional van der Waals high-entropy telluride crystal V of the vacuum-grown material 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 The characteristic peaks of Te2 all correspond to those of the control model NiTe2, and the characteristic peaks are broadened and the peak intensity is weakened compared with those of NiTe2. It can be preliminarily inferred that in the synthesized V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 The five metals V, Pt, Ir, Pd, and Ni in Te2 are uniformly bonded in the bonding mode of NiTe2 to form a high-quality two-dimensional van der Waals high-entropy telluride.

[0046] In order to further verify the accuracy of the material, the present invention characterized the material by aberration-corrected transmission electron microscopy (AC-TEM) ( Figure 5 ) and can clearly observe that the atoms are directly and uniformly bonded, revealing that V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Te2 and NiTe2 have the same trigonal crystal system atomic structure.

[0047] From the energy-dispersive spectroscopy (EDS) elemental distribution map (Figure 6 In (a)-(h), it was clearly observed that elements V, Pt, Ir, Pd, and Ni were highly uniformly distributed in the two-dimensional nanosheets. These results confirmed the successful synthesis of two-dimensional V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Te2, providing a suitable method for the solid-phase formation of two-dimensional layered high-entropy chalcogenides.

[0048] Linear sweep voltammetry curves (LSV) ( Figure 7 ) V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Te2 was in sharp contrast to commercial Pt / C. At the same overpotential, the current density of V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Te2 was significantly higher than that of commercial Pt / C. It indicated that under the same conditions, V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Te2 had higher hydrogen evolution activity.

[0049] Example 2

[0050] Same as Example 1, except that the vanadium powder in Example 1 was replaced with titanium powder, and Ti 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Te2 was prepared with the same preparation process as in Example 1.

[0051] Example 3

[0052] Same as Example 1, except that the platinum powder in Example 1 was replaced with titanium powder, and V 0.2 Ti 0.2 Pd 0.2 Ir 0.2 Ni 0.2 Te2 was prepared with the same preparation process as in Example 1.

[0053] The two-dimensional van der Waals high-entropy tellurides prepared in Example 2 and Example 3 had the same structure and similar morphology as those prepared in Example 1.

[0054] From the X-ray diffraction pattern ( Figure 3 andFigure 4 ) It can be seen that Ti 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Te2 and V 0.2 Ti 0.2 Pd 0.2 Ir 0.2 Ni 0.2 Te2 has the same characteristics as the high-quality two-dimensional van der Waals high-entropy telluride prepared in Example 1.

[0055] Example 4

[0056] A synthesis method of a two-dimensional van der Waals high-entropy telluride of the present invention includes the following steps:

[0057] S1: Weigh V, Pt, Ir, Pd, Ni, and Te in a molar ratio of 1:1:1:1:1:10, and fully grind them in a glove box to make them evenly mixed to obtain a powder.

[0058] S2: Put the powder in step S1 at the bottom raw material end of a single-end open quartz tube, and use a mechanical pump and a molecular pump to evacuate, so that the air pressure in the tube drops to a certain negative air pressure (for example, 10 -4 Pa), and then use a vacuum tube sealer and a hydrogen-oxygen flame sealer to seal the tube.

[0059] S3: Calcinate the quartz tube obtained in step S2 to obtain a two-dimensional high-entropy alloy material, that is, a two-dimensional van der Waals high-entropy telluride. The two-dimensional van der Waals high-entropy telluride crystal material V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Te2 is based on NiTe2 as a control model. V 0.2 Pt 0.2 Ir 0.2 Pd 0.2 Ni 0.2 Te2 is a regular flaky crystal block, can stably exist in the air, and can obtain corresponding nano-scale ultra-thin materials through methods such as ultrasonic exfoliation or electrochemical exfoliation.

[0060] Among them, the calcination temperature is set to rise from room temperature to 1100°C at a rate of 1°C / min, hold for 600 min; then cool to 600°C in about 50 min, and then slowly cool to room temperature in 3 d.

[0061] Example 5

[0062] A synthesis method of a two-dimensional van der Waals high-entropy telluride of the present invention includes the following steps:

[0063] S1: Weigh V, Ti, Ir, Pd, Ni, and Te according to the molar ratio of 1:1:1:1:1:10, and grind them thoroughly in a glove box to make them evenly mixed, obtaining a powder.

[0064] S2: Put the powder in step S1 at the raw material end at the bottom of a single-end open quartz tube, evacuate the air using a mechanical pump and a molecular pump to reduce the air pressure in the tube to a certain negative air pressure (for example, 10 -4 Pa), and then use a vacuum tube sealer and a hydrogen-oxygen flame sealer to seal the tube.

[0065] S3: Calcinate the quartz tube obtained in step S2 to obtain a two-dimensional high-entropy alloy material, that is, two-dimensional van der Waals high-entropy telluride.

[0066] Among them, the calcination temperature is set to rise from room temperature to 1200 °C at a rate of 20 °C / min and hold for 600 min; then cool down to 600 °C in about 250 min, and then slowly cool down to room temperature in 4 days.

[0067] The two-dimensional van der Waals high-entropy telluride in the present invention combines the combined characteristics of high-entropy alloys with the outstanding specific surface area of two-dimensional materials. The preparation method ensures the bonding of five metal elements and tellurium element through a heat treatment step under vacuum conditions. This method is applicable to different metals and different chalcogen elements, providing a combination strategy and synthesis method for designing new materials with outstanding functions.

[0068] The key of the present invention lies in precisely controlling the vacuum degree of the calcination atmosphere, eliminating the influence of environmental gas adsorption on the elemental powder, strengthening the interaction between the metal element and the tellurium element in a high-vacuum environment, and being more conducive to the bonding between metal atoms and tellurium atoms from the perspectives of thermodynamics and kinetics.

[0069] The present invention aims to improve the exposure and stability of metal sites to achieve more excellent hydrogen evolution performance. By precisely controlling the vacuum degree of the calcination atmosphere, the adsorption influence of environmental gas on metal and sulfur elements is eliminated. In a high-vacuum environment, the interaction between the metal and the tellurium element is strengthened, enabling non-volatile and easily decomposed substances to be transformed into high-quality single crystals at temperatures far lower than their direct volatilization temperatures. From the perspectives of thermodynamics and kinetics, this method is conducive to the bonding between metal atoms and tellurium atoms and promotes the formation of crystals. The present invention can achieve the calcination growth of high-quality two-dimensional high-entropy crystals through simple grinding and mixing and vacuum treatment, with simple operation. The raw materials required by this method are widely sourced and have universality.

[0070] The above embodiments are used to further illustrate the present invention, but should not be construed as limiting the present invention. Any other changes, modifications, substitutions, combinations, or simplifications made without departing from the spirit and principle of the present invention shall be equivalent replacement methods and are all included in the protection scope of the present invention. Unless otherwise specified, the technical means used in the embodiments are conventional means well-known to those skilled in the art.

[0071] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present invention belongs. The terms used in the description of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

Claims

1. A method for synthesizing two-dimensional van der Waals high entropy tellurides, characterized in that: The following steps are involved: Mixing vanadium powder, platinum powder, iridium powder, palladium powder, nickel powder and tellurium powder, or titanium powder, platinum powder, iridium powder, palladium powder, nickel powder and tellurium powder, or vanadium powder, titanium powder, iridium powder, palladium powder, nickel powder and tellurium powder to obtain powder; The powder is calcined under vacuum to obtain two-dimensional van der Waals high entropy telluride.

2. The method for synthesizing two-dimensional van der Waals high entropy tellurides according to claim 1, characterized in that: The molar ratio of vanadium powder, platinum powder, iridium powder, palladium powder, nickel powder and tellurium powder, the molar ratio of titanium powder, platinum powder, iridium powder, palladium powder, nickel powder and tellurium powder and the molar ratio of vanadium powder, titanium powder, iridium powder, palladium powder, nickel powder and tellurium powder are 1:1:1:1:1:

10.

3. The method for synthesizing two-dimensional van der Waals high entropy tellurides according to claim 1, characterized in that: The vacuum degree during calcination of two-dimensional high entropy alloy is less than 10 -4 Pa.

4. The method for synthesizing two-dimensional van der Waals high entropy tellurides according to claim 1, characterized in that: The vanadium powder, platinum powder, iridium powder, palladium powder, nickel powder and tellurium powder, or the titanium powder, platinum powder, iridium powder, palladium powder, nickel powder and tellurium powder, or the vanadium powder, titanium powder, iridium powder, palladium powder, nickel powder and tellurium powder are uniformly mixed and ground.

5. The method for synthesizing two-dimensional van der Waals high entropy tellurides according to claim 1, characterized in that: Calcination is carried out in a high temperature furnace.

6. The method for synthesizing two-dimensional van der Waals high entropy tellurides according to claim 1, characterized in that: The calcination conditions are: first keep at 1100-1200°C for 600 minutes; then cool to 600°C, and then cool to room temperature.

7. The method for synthesizing two-dimensional van der Waals high entropy tellurides according to claim 6, characterized in that: The temperature was raised from room temperature to 1100-1200°C at a rate of 1-20°C / min.

8. The method for synthesizing two-dimensional van der Waals high entropy tellurides according to claim 6, characterized in that: Cool down from 1100-1200℃ to 600℃ within 50-250min.

9. The method for synthesizing two-dimensional van der Waals high entropy tellurides according to claim 6, characterized in that: Cool down from 600℃ to room temperature over 3-4 days.

10. A two-dimensional van der Waals high entropy telluride prepared according to the method of any one of claims 1 to 9, characterized in that: The two-dimensional van der Waals high entropy telluride is a micron-scale bulk crystal material, and its internal structure is a lamellar structure stacked layer by layer by van der Waals forces.

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