Vertical cavity surface emitting laser and preparation method, laser radar system and light source thereof

Abstract

The present invention relates to the technical field of vertical cavity surface emitting lasers, and provides a vertical cavity surface emitting laser and a preparation method, a laser radar system and a light source thereof. In the vertical cavity surface emitting laser, each light-emitting unit is separated by a groove; each light-emitting unit includes an epitaxial layer and an ohmic contact layer sequentially arranged on the substrate; the groove is opened in the epitaxial layer; wherein, an ion injection portion formed on the sidewall of the epitaxial layer is provided below the ohmic contact layer of at least some of the light-emitting units, and the current injected into the epitaxial layer by at least one light-emitting unit through the ohmic contact layer is different from the current injected into the epitaxial layer by the remaining light-emitting units through the ohmic contact layer; the phenomenon of premature high-order modes in the peripheral light-emitting holes due to uneven injection current is avoided, the problem of far-field divergence angle is improved, and the performance of the vertical cavity surface emitting laser is guaranteed.

Description

Technical Field

[0001] The present invention belongs to the technical field of vertical cavity surface emitting lasers, and in particular relates to a vertical cavity surface emitting laser and a preparation method thereof, a laser radar system and a light source thereof. Background Art

[0002] In the design of vertical cavity surface emitting lasers, the far-field divergence angle and optical power constrain each other, and these two indicators are very important for VCSELs. Usually, in order to pursue a small divergence angle, vertical cavity surface emitting lasers often reduce the far-field divergence angle at the expense of power. Relatively speaking, in order to compensate for the loss of optical power of the vertical cavity surface emitting laser, the number of light-emitting holes on the vertical cavity surface emitting laser has to be increased. The increase in light-emitting holes will bring about problems such as increased chip size and heat generation, and will also lead to uneven injection current, thereby increasing the loss of unit optical power of the light-emitting hole. The uneven current injection will also lead to an increase in the far-field divergence angle, affecting the performance of the vertical cavity surface emitting laser. Summary of the Invention

[0003] The object of the present invention is to overcome at least one of the above-mentioned deficiencies of the prior art and to provide a vertical cavity surface emitting laser and a preparation method, a lidar system and a light source thereof, so as to avoid the far-field divergence angle of the vertical cavity surface emitting laser being too large and to ensure the performance of the vertical cavity surface emitting laser.

[0004] The technical solution of the present invention is:

[0005] A vertical cavity surface emitting laser comprises a device base, wherein the device base comprises a substrate and a plurality of light emitting units arranged on the substrate, wherein each of the light emitting units is separated by a groove;

[0006] Each light-emitting unit includes an epitaxial layer and an ohmic contact layer sequentially provided on the substrate; the groove is opened in the epitaxial layer;

[0007] An ion implantation portion formed on a sidewall of the epitaxial layer is provided below the ohmic contact layer of at least some of the light-emitting units, and the ion implantation portion is configured to adjust the magnitude of the current injected into the epitaxial layer through the ohmic contact layer; and each of the light-emitting units after the ion implantation portion is formed satisfies the following conditions:

[0008] The current injected into the epitaxial layer via the ohmic contact layer by at least one light-emitting unit is different from the current injected into the epitaxial layer via the ohmic contact layer by the remaining light-emitting units;

[0009] The device substrate has at least two light-emitting areas arranged from a set position to a position away from the set position, and each light-emitting area is provided with at least one light-emitting unit;

[0010] The set position is the center point of the light-emitting unit area, or the device substrate is provided with a first power supply input portion located on one side of the light-emitting unit area, and the set position is a position away from the first power supply input portion;

[0011] By configuring the ion implantation portion, the light emitting unit close to the set position carries a relatively larger current.

[0012] Optionally, a projection area of ​​the ion implantation portion in at least one of the light-emitting units relatively far from the set position toward the substrate is S1, and a projection area of ​​the ion implantation portion in at least one of the light-emitting units relatively close to the set position toward the substrate is S2, and S1 is greater than S2;

[0013] Alternatively, the epitaxial layer below at least one of the light-emitting units is not provided with the ion implantation portion.

[0014] Optionally, each of the light-emitting units includes a light-emitting hole and a conductive channel arranged around the light-emitting hole; the vertical cavity surface emitting laser is provided with a first electrode, and a plurality of the conductive channels are arranged around the periphery of each light-emitting hole;

[0015] One end of the conductive channel is connected to the first electrode, and the ohmic contact layer is connected to the other end of the conductive channel.

[0016] Optionally, the epitaxial layer includes a semiconductor contact layer and a P-DBR layer sequentially disposed below the ohmic contact layer;

[0017] The ion implantation portion is formed in the semiconductor contact layer, or the ion implantation portion is formed in the semiconductor contact layer and the P-DBR layer.

[0018] Optionally, the epitaxial layer further includes a photoelectric confinement layer, a multi-quantum well layer and an N-DBR layer arranged in sequence from below the P-DBR layer, and the ion injection portion is formed in the semiconductor contact layer, the P-DBR layer, the photoelectric confinement layer, the multi-quantum well layer and part of the N-DBR layer.

[0019] Optionally, the device substrate includes a passivation layer, the conductive channel runs through the passivation layer, the first electrode is provided on one side of the passivation layer and connected to the first end of the conductive channel,

[0020] The ohmic contact layer is a P-type ohmic contact layer, and is disposed on the other side of the passivation layer and connected to the second end of the conductive channel.

[0021] The present invention also provides a method for preparing a vertical cavity surface emitting laser, which is used to prepare the above-mentioned vertical cavity surface emitting laser, comprising:

[0022] When manufacturing the vertical cavity surface emitting laser, an ion implantation portion formed on a sidewall of the epitaxial layer is provided below the ohmic contact layer of at least some of the light-emitting units. The ion implantation portion is configured to adjust the magnitude of the current injected into the epitaxial layer through the ohmic contact layer. After the ion implantation portion is formed, each of the light-emitting units meets the following conditions:

[0023] The current injected into the epitaxial layer via the ohmic contact layer by at least one light-emitting unit is different from the current injected into the epitaxial layer via the ohmic contact layer by the remaining light-emitting units;

[0024] By configuring the ion implantation portion, the light emitting unit close to the set position carries a relatively larger current.

[0025] The present invention also provides a light source for a laser radar system, comprising at least one of the above-mentioned vertical cavity surface emitting lasers.

[0026] The present invention also provides a laser radar system, comprising a transmitting component for transmitting a light source and a receiving component for receiving the light source, wherein the transmitting component adopts the above-mentioned light source for the laser radar system.

[0027] The present invention provides a vertical cavity surface emitting laser and a preparation method, a laser radar system and a light source thereof, wherein the current injected into the epitaxial layer via the ohmic contact layer by at least one light-emitting unit is different from the current injected into the epitaxial layer via the ohmic contact layer by the remaining light-emitting units. In this way, by adjusting the current passing capacity of the light-emitting unit, it is beneficial to make the current passing capacity of each light-emitting unit balanced and consistent, thereby achieving the purpose of adjusting the current injection uniformity of different light-emitting units at different positions, thereby avoiding the phenomenon of premature appearance of high-order modes in the peripheral light-emitting holes due to uneven injection current. It avoids the light-emitting angle of the light-emitting unit in the edge area being too large to affect the far-field divergence angle of the vertical cavity surface emitting laser. The far-field divergence angle can be reduced without sacrificing power, thereby ensuring the performance of the vertical cavity surface emitting laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0029] Figure 1 is a top view of a vertical cavity surface emitting laser provided by an embodiment of the present invention;

[0030] Figure 2Schematic diagram of the arrangement of light-emitting units in a light-emitting unit area of ​​a vertical cavity surface emitting laser provided by an embodiment of the present invention;

[0031] Figure 3 yes Figure 1 Schematic cross-sectional view of section AA.

[0032] 100. Device base; 101. Light-emitting unit area; 110. Light-emitting unit; 111. Light-emitting hole; 210. First power supply access part; 120. First electrode; 112. Conductive channel; 130. Passivation layer; 140. Ohmic contact layer; 150. Semiconductor contact layer; 160. Epitaxial layer; 161. P-DBR layer; 162. Photoelectric confinement layer; 163. Multi-quantum well layer; 164. N-DBR layer; 170. Second electrode; 190. Ion implantation part; 200. Substrate. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0034] It should be noted that the terms "setting" and "connecting" should be understood in a broad sense. For example, it can be directly setting or connecting, or it can be indirectly setting or connecting through a central component or a central structure.

[0035] In addition, if there are terms such as "longitudinal", "transverse", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicating orientation or positional relationships in the embodiments of the present invention, they are based on the orientation or positional relationships shown in the drawings or the conventional placement state or usage state, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the structure, feature, device or element referred to must have a specific orientation or positional relationship, nor must it be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0036] The various specific technical features and embodiments described in the specific implementation methods can be combined in any suitable manner unless there is any contradiction. For example, different implementation methods can be formed by combining different specific technical features / embodiments. In order to avoid unnecessary repetition, the various possible combinations of the specific technical features / embodiments in the present invention will not be described separately.

[0037] like Figure 1 and Figure 2As shown, an embodiment of the present invention provides a vertical cavity surface emitting laser, comprising a device base 100, the device base 100 comprising a substrate 200 and a plurality of light-emitting units 110 disposed on the substrate 200, each of the light-emitting units 110 being separated by a trench. Each light-emitting unit 110 comprises an epitaxial layer 160 and an ohmic contact layer 140 sequentially disposed on the substrate 200; the trench is formed in the epitaxial layer 160;

[0038] An ion implantation portion 190 is provided below the ohmic contact layer 140 of at least some of the light-emitting units 110 and formed on the sidewall of the epitaxial layer 160. The ion implantation portion 190 is configured to adjust the magnitude of the current injected into the epitaxial layer 160 through the ohmic contact layer 140. After the ion implantation portion 190 is formed, each of the light-emitting units 110 meets the following conditions:

[0039] The current injected into the epitaxial layer 160 by at least one light-emitting unit 110 via the ohmic contact layer 140 is different from the current injected into the epitaxial layer 160 by the remaining light-emitting units 110 via the ohmic contact layer 140. In this way, by adjusting the current carrying capacity of the light-emitting units 110, the current carrying capacity of each light-emitting unit 110 is balanced and consistent, thereby preventing the light-emitting angle of the light-emitting units 110 in a local area (especially the edge area) from being too large, thereby affecting the far-field divergence angle of the vertical cavity surface emitting laser.

[0040] Specifically, the device substrate 100 has a light-emitting unit area 101, and the light-emitting unit area 101 includes at least two light-emitting regions, each light-emitting region being arranged from a set position to a position away from the set position. The set position can be the center point of the light-emitting unit area 101 (e.g., Figure 2 Alternatively, the device substrate 100 is provided with a first power supply connection portion 210 (which can be used to connect to the positive pole of the power supply) located on one side of the light-emitting unit area 101, and the set position is a position away from the first power supply connection portion 210. At least one light-emitting unit 110 is provided in each light-emitting area; some or all of the light-emitting units 110 are correspondingly provided with an ion implantation portion 190 (such as Figure 1 、 Figure 2 The ion implantation portion 190 is configured such that the current injected into the epitaxial layer 160 via the ohmic contact layer 140 from at least one light-emitting unit 110 located away from a predetermined position is greater than the current injected into the epitaxial layer 160 via the ohmic contact layer 140 from at least one light-emitting unit 110 located relatively close to the light-emitting unit 110. This prevents the light-emitting angle of the light-emitting units 110 in the edge regions from being too large and thereby affecting the far-field divergence angle of the vertical cavity surface emitting laser.

[0041] In a specific application, the projection area of ​​the ion injection portion 190 in at least one of the light-emitting units 110 toward the substrate 200 is S1, and the projection area of ​​the ion injection portion 190 in at least one of the light-emitting units 110 toward the substrate 200 is S2, and S1 is greater than S2. By controlling the effective area of ​​the ion injection portion 190, the current injection capability of the corresponding light-emitting unit 110 through the ohmic contact layer 140 to the epitaxial layer 160 is adjusted, so that the current injection capability of each light-emitting unit 110 is balanced, which can avoid the light-emitting angle of the light-emitting unit 110 in the edge area being too large and affecting the far-field divergence angle of the vertical cavity surface emitting laser.

[0042] In this embodiment, the setting position is taken as the center of the light-emitting unit area 101. In this way, the current tends to flow toward the light-emitting unit 110 in the central area, so that the current and power carried by the light-emitting unit 110 in the central area are relatively large, and the current and power carried by the light-emitting unit 110 in the peripheral area are relatively small, thereby limiting the increase of the far-field divergence angle. The problem of the far-field divergence angle can be improved by changing the size of the ion injection part to adjust the current and power. The far-field divergence angle can be reduced without sacrificing power, thereby ensuring the performance of the vertical cavity surface emitting laser.

[0043] It is understood that ion implantation will introduce lattice defects in the material, such as vacancies and interstitial atoms, which will reduce the mobility of carriers and thus reduce the conductivity of the ion implantation portion 190. Ion implantation can be replaced by proton implantation. The ion implantation portion 190 can be ring-shaped as a whole.

[0044] In a specific application, as a first resistance adjustment method, the width of the ion implantation portion 190 relatively far from the set position is greater than the width of the ion implantation portion 190 relatively close to the set position.

[0045] As a second resistance adjustment method, the thickness of the ion implantation portion 190 relatively far from the set position is greater than the thickness of the ion implantation portion 190 relatively close to the set position.

[0046] In some optional embodiments, except for the light-emitting unit 110 in the light-emitting area close to the set position, the remaining light-emitting units 110 are all correspondingly provided with the ion injection part 190, that is, the light-emitting unit 110 closest to the set position may not be provided with the ion injection part 190.

[0047] Specifically, if Figures 1 to 3 As shown, the light emitting area includes a first light emitting area and a second light emitting area. The first light emitting area is closer to the center of the light emitting unit area 101 relative to the second light emitting area. The second light emitting area is set at the periphery of the first light emitting area (as shown in FIG. Figure 3As shown); or, the second light-emitting area is arranged on a side of the first light-emitting area away from the set position. In specific applications, the first light-emitting area can be circular or polygonal, and the second light-emitting area can be annular or polygonal, and the second light-emitting area is arranged around the periphery of the first light-emitting area, that is, the light-emitting unit 110 in the second light-emitting area is closer to the edge of the vertical cavity surface emitting laser relative to the light-emitting unit 110 in the first light-emitting area. Of course, in specific applications, a third light-emitting area can also be provided around the second light-emitting area. Similarly, a fourth light-emitting area can also be provided around the third light-emitting area, and so on, which will not be repeated here.

[0048] Specifically, the ion injection portion 190 is provided under each light-emitting unit 110 in the first light-emitting area, and the area of ​​each ion injection portion 190 is A1. The ion injection portion 190 is provided under the second light-emitting area, and the area of ​​each ion injection portion 190 is A2, and A1 is smaller than A2. In this way, the light-emitting unit 110 that is relatively close to the set position (the center of the light-emitting unit area) can carry relatively larger current and power.

[0049] In this embodiment, one light-emitting unit 110 is provided in the first light-emitting area, and the light-emitting unit 110 is provided at the center point, or a plurality of light-emitting units 110 are provided in the first light-emitting area, and each of the light-emitting units 110 is evenly distributed along the circumferential direction with the center point as the center; that is, the first light-emitting area can be provided with one or more light-emitting units 110. In this embodiment, the light-emitting unit 110 in the first light-emitting area is taken as one as an example. Of course, the number of light-emitting units 110 in the first light-emitting area can also be three or four or other appropriate numbers. When the first light-emitting area is provided with a plurality of light-emitting units 110, each light-emitting unit 110 can be arranged according to a set rule or randomly arranged.

[0050] Specifically, a plurality of light-emitting units 110 are provided in the second light-emitting area. In this embodiment, six light-emitting units 110 are provided in the second light-emitting area as an example. Of course, the number of light-emitting units 110 can also be 8 or 10 or other appropriate numbers, and each of the light-emitting units 110 is evenly distributed around the periphery of the first light-emitting area along the circumferential direction with the center point as the center. Each light-emitting unit 110 can be arranged according to a set rule or randomly.

[0051] In specific applications, if more light-emitting units 110 or a larger vertical cavity surface emitting laser is required, the light-emitting area further includes a third light-emitting area, which can be arranged around the periphery of the second light-emitting area. The third light-emitting area is provided with a plurality of light-emitting units 110, and each of the light-emitting units 110 is evenly distributed around the periphery of the second light-emitting area along the circumferential direction with the center point as the center, forming a three-ring structure.

[0052] In specific applications, each light-emitting unit 110 can be arranged in a double-ring or multi-ring manner, wherein the inner ring can have one or more light-emitting units 110, and the second ring and the third ring can be provided with multiple light-emitting units 110. Among them, the light-emitting unit 110 closer to the outer ring has a relatively smaller ability to pass current, thereby reducing the current and power of the outer ring light-emitting unit 110 to prevent its light-emitting angle from being too large.

[0053] Specifically, if Figures 1 to 3 As shown, each of the light-emitting units 110 includes a light-emitting hole 111 and a current injection structure, which can be arranged around the light-emitting hole 111; a first electrode 120 (which can be an Au layer for connecting to the positive electrode) is provided on one side of the device substrate 100, and the first electrode 120 can be electrically connected to the first power supply input part 210, and a second electrode (which can be an Au layer for connecting to the negative electrode) is provided on the other side of the device substrate 100. The current injection structure includes a conductive channel 112 electrically connected between the first electrode 120 and the second electrode. A plurality of conductive channels 112 are provided around the periphery of each light-emitting hole 111. The conductive channels 112 can be (cylindrical) metal-filled holes. A plurality of conductive channels 112 can be correspondingly provided around the periphery of each light-emitting hole 111. Figure 2 In the embodiment, six conductive channels 112 are correspondingly provided on the periphery of each light-emitting hole 111 .

[0054] like Figure 3As shown, the VCSEL includes an ohmic contact layer 140, and the ion implantation portion 190 is connected to the ohmic contact layer 140. One end of the conductive channel 112 is connected to the first electrode 120, and the ohmic contact layer 140 is a P-type ohmic contact layer connected to the other end of the conductive channel 112. An epitaxial layer 160 is disposed beneath the ohmic contact layer 140. The bottom surface of the substrate may be provided with a second electrode 170 (which may be a conductive metal layer for connection to the cathode). In specific applications, the epitaxial layer 160 includes a semiconductor contact layer 150, a P-DBR layer 161, an optoelectronic confinement layer (OA layer) 162, a multi-quantum well layer (MQW layer) 163, and an N-DBR layer 164, which are sequentially disposed beneath the ohmic contact layer 140. The P-DBR layer 161 is a P-type distributed Bragg reflector, which, together with the bottom N-DBR layer 164, forms an optical resonant cavity that reflects light of a specific wavelength and enhances laser output. The P-DBR layer 161 can be composed of multiple alternating layers of materials with different refractive indices, typically with P-type doping. The optoelectronic confinement layer 162 (OA layer) serves to confine the light-emitting region of the vertical cavity surface emitting laser. This layer is primarily formed by wet oxidation, oxidizing the high-aluminum layer in the P-DBR to form aluminum oxide. This creates a refractive index difference with the high-aluminum layer in the central region, confining light. The aluminum oxide itself is insulating, thus enabling current control. The multi-quantum well layer 163 (MQW layer) serves as the active region, the MQW active region, where lasing occurs. The MQW structure consists of alternating well and barrier layers. Carriers (electrons and holes) recombine in the well layers, generating photons and achieving stimulated emission. The N-DBR layer 164 is an N-type distributed Bragg reflector. It serves as the bottom reflector and, together with the top P-DBR layer 161, forms an optical resonant cavity, reflecting light of a specific wavelength and enhancing laser output. The N-DBR layer 164 can be composed of multiple alternating layers of materials with different refractive indices, typically with N-type doping.

[0055] Specifically, the P-DBR layer 161 is located below the semiconductor contact layer 150, and the P-DBR layer 161, the photovoltaic confinement layer 162, the multi-quantum well layer 163, and the N-DBR layer 164 are arranged from top to bottom. The ion implantation portion 190 can be formed in the semiconductor contact layer 150, the P-DBR layer 161, the photovoltaic confinement layer 162, the multi-quantum well layer 163, and a portion of the N-DBR layer 164. By controlling the energy, time, and / or dose of the ion implantation, the depth of the implantation can be controlled, that is, the specific layer of the epitaxial layer in which the ion implantation portion is formed can be controlled.

[0056] In this embodiment, the ohmic contact layer 140 is a P-type ohmic contact layer, and the VCSEL emits light from the front side. When the ohmic contact layer 140 is an N-type ohmic contact layer, the N-type ohmic contact layer is positioned relative to the conductive channel 112 and closer to the second electrode 170, and the VCSEL emits light from the back side.

[0057] Specifically, the device substrate 100 also includes a passivation layer (which may be a SiN layer) 130, the conductive channel 112 passes through the passivation layer 130, the first electrode 120 (which may be a gold-plated layer) is arranged on one side of the passivation layer 130 and connected to the first end of the conductive channel 112, and the P-type ohmic contact layer is arranged on the other side of the passivation layer 130 and connected to the second end of the conductive channel 112.

[0058] Specifically, the ion implantation portion 190 is formed in the semiconductor contact layer 150 , or the ion implantation portion 190 is formed in the semiconductor contact layer 150 and the P-DBR layer 161 .

[0059] Specifically, in this embodiment, the ion implantation portion 190 is formed in the semiconductor contact layer 150 and the P-DBR layer 161, and is located between the ohmic contact layer 140 and the photoelectric confinement layer 162. That is, by implanting ions into designated areas of the P-type ohmic contact layer and the photoelectric confinement layer 162, the ion implantation portion 190 is formed, thereby relatively reducing the resistance value corresponding to the light-emitting unit at the center.

[0060] An embodiment of the present invention further provides a method for manufacturing a vertical cavity surface emitting laser, which is used to manufacture the above-mentioned vertical cavity surface emitting laser, comprising:

[0061] When manufacturing the vertical cavity surface emitting laser,

[0062] An ion implantation portion 190 is provided below the ohmic contact layer 140 of at least some of the light-emitting units 110 and formed on the sidewall of the epitaxial layer 160. The ion implantation portion 190 is configured to adjust the magnitude of the current injected into the epitaxial layer 160 through the ohmic contact layer 140. After the ion implantation portion 190 is formed, each of the light-emitting units 110 meets the following conditions:

[0063] The current injected into the epitaxial layer 160 by at least one light-emitting unit 110 via the ohmic contact layer 140 is different from the current injected into the epitaxial layer 160 by the remaining light-emitting units 110 via the ohmic contact layer 140. In this way, by adjusting the current carrying capacity of the light-emitting units 110, the current carrying capacity of each light-emitting unit 110 is balanced and consistent, thereby preventing the light-emitting angle of the light-emitting units 110 in a local area (especially the edge area) from being too large, thereby affecting the far-field divergence angle of the vertical cavity surface emitting laser.

[0064] like Figure 3 The arrow shown in the figure is the current injection direction of the vertical cavity surface emitting laser. It can be seen that after the current passes through the conductive channel 112, the ohmic contact layer 140 and the semiconductor contact layer 150, it flows from the hole position of the photoelectric confinement layer 162 to the multi-quantum well layer 163 to achieve laser excitation.

[0065] An embodiment of the present invention further provides a laser device, which includes the above-mentioned vertical cavity surface emitting laser.

[0066] An embodiment of the present invention further provides a light source for a laser radar system, comprising at least one of the above-mentioned vertical cavity surface emitting lasers.

[0067] An embodiment of the present invention further provides a laser radar system, comprising a transmitting component and a receiving component, wherein the transmitting component adopts the above-mentioned light source for the laser radar system.

[0068] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions or improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A vertical cavity surface emitting laser, characterized in that: The device comprises a device base, wherein the device base comprises a substrate and a plurality of light-emitting units arranged on the substrate, wherein each of the light-emitting units is separated by a groove; Each light-emitting unit includes an epitaxial layer and an ohmic contact layer sequentially provided on the substrate; the groove is opened in the epitaxial layer; An ion implantation portion formed on a sidewall of the epitaxial layer is provided below the ohmic contact layer of at least some of the light-emitting units, and the ion implantation portion is configured to adjust the magnitude of the current injected into the epitaxial layer through the ohmic contact layer; and each of the light-emitting units after the ion implantation portion is formed satisfies the following conditions: The current injected into the epitaxial layer via the ohmic contact layer by at least one light-emitting unit is different from the current injected into the epitaxial layer via the ohmic contact layer by the remaining light-emitting units; The device substrate has at least two light-emitting areas arranged from a set position to a position away from the set position, and each light-emitting area is provided with at least one light-emitting unit; The set position is the center point of the light-emitting unit area, or the device substrate is provided with a first power supply input portion located on one side of the light-emitting unit area, and the set position is a position away from the first power supply input portion; By configuring the ion implantation portion, the light emitting unit close to the set position carries a relatively larger current.

2. A vertical cavity surface emitting laser according to claim 1, characterized in that: The projected area of ​​the ion implantation portion of at least one light emitting unit relatively far from the set position toward the substrate is S1, and the projected area of ​​the ion implantation portion of at least one light emitting unit relatively close to the set position toward the substrate is S2, and S1 is greater than S2; Alternatively, the ion implantation portion is not provided on the epitaxial layer of at least one light emitting unit closest to the set position.

3. The vertical cavity surface emitting laser according to claim 1, wherein: Each of the light-emitting units includes a light-emitting hole and a conductive channel arranged around the light-emitting hole; the vertical cavity surface emitting laser is provided with a first electrode, and a plurality of the conductive channels are arranged around the periphery of each light-emitting hole; One end of the conductive channel is connected to the first electrode, and the ohmic contact layer is connected to the other end of the conductive channel.

4. A vertical cavity surface emitting laser according to claim 3, characterized in that: The epitaxial layer includes a semiconductor contact layer and a P-DBR layer sequentially arranged below the ohmic contact layer; The ion implantation portion is formed in the semiconductor contact layer, or the ion implantation portion is formed in the semiconductor contact layer and the P-DBR layer.

5. A vertical cavity surface emitting laser according to claim 4, characterized in that: The epitaxial layer also includes a photoelectric confinement layer, a multi-quantum well layer and an N-DBR layer arranged in sequence from below the P-DBR layer, and the ion injection portion is formed in the semiconductor contact layer, the P-DBR layer, the photoelectric confinement layer, the multi-quantum well layer and part of the N-DBR layer.

6. The vertical cavity surface emitting laser according to claim 5, characterized in that: The device substrate includes a passivation layer, the conductive channel runs through the passivation layer, the first electrode is arranged on one side of the passivation layer and connected to the first end of the conductive channel, The ohmic contact layer is a P-type ohmic contact layer, and is disposed on the other side of the passivation layer and connected to the second end of the conductive channel.

7. A method for preparing a vertical cavity surface emitting laser, characterized in that: Used to manufacture a vertical cavity surface emitting laser according to any one of claims 1 to 6, comprising: When manufacturing the vertical cavity surface emitting laser, an ion implantation portion formed on a sidewall of the epitaxial layer is provided below the ohmic contact layer of at least some of the light-emitting units. The ion implantation portion is configured to adjust the magnitude of the current injected into the epitaxial layer through the ohmic contact layer. After the ion implantation portion is formed, each of the light-emitting units meets the following conditions: The current injected into the epitaxial layer via the ohmic contact layer by at least one light-emitting unit is different from the current injected into the epitaxial layer via the ohmic contact layer by the remaining light-emitting units; By configuring the ion implantation portion, the light emitting unit close to the set position carries a relatively larger current.

8. A light source for a laser radar system, characterized in that: The method comprises at least one vertical cavity surface emitting laser according to any one of claims 1 to 6.

9. A laser radar system, characterized in that: It comprises a transmitting component for transmitting a light source and a receiving component for receiving a light source, wherein the transmitting component adopts the light source for a laser radar system as claimed in claim 8.

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