Ceramic base

Abstract

This invention relates to a ceramic base, which includes a ceramic plate with electrodes. The ceramic plate may include: an electrode pad connected to the electrodes; and an electrode rod with one end connected to the electrode pad and used to supply power to the electrodes. The electrode rod may include: an extension connected to the electrode pad; and a power connection portion disposed at the end of the tapered portion of the extension.

Description

Technical Field

[0001] The present invention relates to a base, and more particularly to a base for an electrode rod material used in a ceramic-based base for reducing impedance.

[0002] In addition, the present invention relates to a base, specifically a ceramic base for improving the durability of electrode rods. Background Technology

[0003] Typically, semiconductor devices or display devices are manufactured by patterning multiple thin film layers, including dielectric and metal layers, sequentially stacked on a glass substrate, flexible substrate, or semiconductor wafer substrate. In this semiconductor manufacturing process, a substrate is used as a support structure to support the substrate. For precision processes such as miniaturization of wiring in semiconductor devices, substrates are widely used in processes such as plasma deposition to meet precise temperature control and heat treatment requirements. Furthermore, the substrate is used in processes such as etching of the thin film layers formed on the semiconductor wafer substrate for plasma formation or substrate heating.

[0004] Figure 1 This is a diagram illustrating the electrode section of an existing base. (Refer to...) Figure 1 The existing base has conductive pads 36 for engaging with electrode rods (31, 32) inside the ceramic plate 30. Radio frequency (RF) electrodes 35 of various two-dimensional shapes (such as circular or crescent-shaped) are embedded in the ceramic plate 30. Additionally, conductive pads 36 are embedded to be electrically connected to the RF electrodes 35.

[0005] The eyelet-shaped support 34, which internally houses the electrode rods (31, 32), is threadedly connected to the ceramic plate 30 via threads formed in the opening of the ceramic plate 30. At this time, brazing filler metal 37 can be provided between the upper electrode rod 31 and the lower electrode rod 32, and between the lower electrode rod 32 and the conductive pad 36. The brazing filler metal 37 can electrically connect the electrode rods (31, 32) to the RF electrode 35 via bonding processes such as brazing. In the existing base described above, the gap between the support 34 and the lower electrode rod 32, or the gap between the support 34 and the ceramic plate 30, serves as a path for oxygen permeation in a high-temperature atmosphere, thereby oxidizing the upper electrode rod 31 and the lower electrode rod 32. This oxidation reduces the conductivity and power transmission efficiency of the electrode rods, which may lead to reduced reliability of the electrode section and a shortened base lifespan.

[0006] Due to this oxidation problem, existing electrode rods mainly use heat-resistant and oxidation-resistant materials (such as Ni or Ni alloys). However, when the existing Ni-series heat-resistant materials used in electrode rods are used as power transmission lines in high-frequency regions, the impedance of the electrode rod increases and is accompanied by heat generation due to the skin effect of current flowing along the surface of the electrode rod.

[0007] Furthermore, with the development of semiconductor technology, a high-frequency substrate that can apply high electrical rates is needed to operate at higher temperatures and have higher plasma characteristics. As a result, the skin effect in the electrode rod becomes more pronounced, and short-circuit problems due to heating and oxidation occur frequently.

[0008] To address the aforementioned problem, previous attempts have attempted to reduce heat generation or thermal conductivity by coating the Ni or Ti rod substrate with Au, Ag, Al, or Cu, as in Patent Publication No. 10-2018-0121662 (November 7, 2018), or by coating the Mo, Ni, or Ti rod substrate with an alumina film, as in Patent Publication No. 10-2021-0139368 (November 22, 2021). However, even with these methods, the problem of increased impedance in the electrode rod material due to increased frequency in high-frequency power transmission has not been fundamentally solved.

[0009] Figure 9 This is a diagram used to illustrate another electrode portion of an existing ceramic substrate.

[0010] Reference Figure 9The existing ceramic base has an electrode portion at the center of the ceramic plate 30 for connection with external electrode rods (31, 32). In the ceramic plate 30, electrodes 35, which can serve as heating elements (electrodes) or RF (high-frequency) electrodes, are embedded in annular, circular, or other arrangements. Additionally, conductive pads 36, serving as electrode substrates, are embedded and electrically connected to the electrodes 35. Eyelet-shaped support bodies 34 are connected by threads formed in the openings. The upper electrode rod 31 and the lower electrode rod 32, as well as the lower electrode rod 32 and the conductive pad 36, are electrically connected to the electrode rods (31, 32) and the electrode 35 for power supply via brazing. In the existing ceramic substrates described above, the gaps between the support 34 and the lower electrode rod 32, or between the support 34 and the ceramic plate 30, create pathways for oxygen permeability in a high-temperature atmosphere, thereby oxidizing the solder 37 formed at the interface between the conductive pad 36 (which serves as the electrode substrate) and the lower electrode rod 32, or the conductive pad 36 and the lower electrode rod 32. The solder formed at the interface between the upper electrode rod 31 and the lower electrode rod 32 can also be oxidized due to oxygen permeation. This oxidation reduces conductivity and power transmission efficiency, potentially lowering the reliability of the electrode section and shortening the lifespan of the ceramic substrate.

[0011] To overcome this reliability issue, existing electrode rods primarily use heat-resistant and oxidation-resistant materials (such as Ni or Ni alloys). Since the Ni material used in existing electrode rods is ferromagnetic, when used in high-frequency regions as a power transmission line (e.g., as an electrode), the skin depth in the line where electrons are to move is small, making it difficult for electrons to move, increasing impedance and generating heat, and causing short circuits with the ceramic plate 30, etc.

[0012] In addition, existing electrode rods use materials with low magnetic permeability such as Mo or apply an anti-oxidation coating to the rod material in order to improve the aforementioned problems. However, even in this case, due to the interfacial thermal stress between the electrode rod metal material such as Mo and the coating or the brittle nature of the coating material itself, the coating may break (crack) or oxygen may permeate into the electrode rod metal material during use in semiconductor processes, thus causing the electrode rod metal material to oxidize. Summary of the Invention

[0013] The problem the invention aims to solve

[0014] The inventors of this invention noted that Ni or Ni alloys, as ferromagnets, have a high relative permeability (<600). Therefore, when used as radio frequency (RF) electrodes, as power and frequency increase, the skin depth within the electrode becomes extremely small due to the skin effect, making it difficult for electrons to move and ultimately contributing to increased impedance. This increased impedance not only reduces plasma efficiency as the electrical energy consumed during plasma discharge is converted into heat at the electrode tip, but also causes unevenness in the thickness and quality of the thin film deposited on the substrate by forming hot spot zones on the upper surface of the ceramic plate supporting the substrate, thus reducing yield.

[0015] Furthermore, as the temperature of the ceramic part connected to the electrode rod rises rapidly in a localized manner, damage to the base due to thermal shock and damage to the brazing joint become the decisive factors in generating an electric arc. In order to increase the yield of semiconductor devices and improve the durability of the base, it is necessary to solve the impedance problem of the electrode rod.

[0016] Therefore, the object of the present invention is to provide a base having electrode rods that have low impedance and good high-frequency transmission characteristics for RF current.

[0017] In addition, the present invention aims to provide an electrode rod with a surface-coated structure suitable for the aforementioned RF power transmission.

[0018] In addition, the present invention aims to provide an electrode rod with a resistive surface-coated structure that addresses the heat generated by the skin effect.

[0019] In addition, the present invention aims to provide an electrode rod with a surface-coated structure that exhibits good brazing properties.

[0020] In addition, the present invention aims to provide a method for manufacturing the aforementioned electrode rod.

[0021] In addition, the present invention aims to provide a base on which the aforementioned RF power transmission electrode rod is provided.

[0022] In addition, the present invention aims to provide a base having a surface covering structure and an integral electrode rod.

[0023] Furthermore, the object of the present invention is to improve the following problem: even when the material of the electrode rod used for the electrode is selected from Mo, W or alloys thereof, and a material with high resistivity (TiN, TiAlCrN, TiAlN, and AlCrN, etc.) is used as a coating, such as Figure 9 As shown, in the portion of the joint on the extension line of the electrode rod where there is a step or corner, oxygen permeates into the electrode rod metal material due to the cracking of the coating, resulting in oxidation of the electrode rod metal material and thus the concentrated generation of oxides.

[0024] The purpose of this invention to improve the aforementioned problems is to provide an electrode rod structure for a ceramic base that improves durability and has good high-frequency transmission characteristics in antioxidant and corrosion-resistant environments, and to provide a ceramic base with a unique position or structure of the joint portion on the extension line of the electrode rod.

[0025] means for solving problems

[0026] To address the aforementioned technical problem, the present invention provides a base comprising a ceramic plate on which electrodes are disposed. The base includes an electrode rod, one end of which is electrically connected to the electrodes, and the other end of which is electrically connected to a power source and used to supply power to the electrodes. The electrode rod comprises a base material, an alloy of Mo, W, or their metals; and a metal nitride film for coating the surface of the base material. Additionally, in the present invention, one end of the electrode rod may include an exposed surface of the base material not covered by the metal nitride film.

[0027] In this invention, the metal nitride film may include an AlCrN film. In this case, the Cr / (Al+Cr) molar ratio of the AlCrN film can be 0.1 to 0.9.

[0028] In addition, the metal nitride film may include one or more nitride films selected from the group consisting of AlCrSiN, AlCrSiWN and AlTiCrN.

[0029] In this invention, the ratio of the resistivity of the metal nitride film to the resistivity of the base material is preferably 10. 2 Above, 10 3 More than or 10 4 above.

[0030] In this invention, a CrN substrate layer may be included between the base material and the metal nitride film.

[0031] In this invention, the thickness of the metal nitride film can be 1.0 μm to 10.0 μm.

[0032] To address the aforementioned technical problem, the present invention provides a base comprising a ceramic plate on which electrodes are disposed. The base includes an electrode rod assembly, one end of which is electrically connected to the electrodes, and the other end of which is electrically connected to a power source, for supplying power to the electrodes. The electrode rod assembly includes a first rod and a second rod connected in series. The first rod includes a base material, an alloy of Mo, W, or their metals, and a metal nitride film for coating the surface of the base material.

[0033] In this invention, the first rod and the second rod can be joined by a bonding material.

[0034] In addition, preferably, the joint surface of the first rod and the second rod is the exposed surface of the base material that is not covered by the metal nitride film.

[0035] In this invention, the first rod may include a base material made of Kovar.

[0036] Additionally, according to another aspect of the invention for achieving the aforementioned objective, a base for a ceramic plate provided with electrodes is included. The ceramic plate includes: an electrode pad connected to the electrodes; and an electrode rod with one end connected to the electrode pad and used to supply power to the electrodes. The electrode rod includes: an extension connected to the electrode pad; and a power connection portion disposed at the end of the tapered portion of the extension.

[0037] The electrode rod may include a metal nitride film on the surface of the base material.

[0038] The tapered portion can be machined by taper machining on a machine tool so that the tapered portion is included between the extension portion and the power connection portion with different diameters.

[0039] The inclination angle of the tapered portion of the extension relative to its length direction can be 10° to 80°.

[0040] The length of the tapered portion of the extension can be 1.0 mm to 10.0 mm in the length direction of the extension.

[0041] The position of the smaller diameter end of the tapered portion of the extension can be at a temperature that is more than 10% lower than the temperature of the lowest end face of the ceramic plate.

[0042] Preferably, the position of the smaller diameter end of the tapered portion of the extension can be at a temperature that is more than 20% lower than the temperature of the lowest end face of the ceramic plate.

[0043] The electrode rod can be made of Mo, W, or alloys thereof as the base material.

[0044] The extension of the electrode rod may include a second rod brazed to the electrode pad and a first rod brazed to the second rod.

[0045] Preferably, the second rod is made of a metal material whose coefficient of thermal expansion differs from that of the electrode pad material by less than 3.

[0046] The electrode can be a high-frequency electrode, an electrostatic chuck electrode, or a heating element.

[0047] Invention Effects

[0048] According to a first aspect of the invention, the invention provides a base having electrode rods that have low impedance and good high-frequency transmission characteristics for RF current.

[0049] Furthermore, according to a second aspect of the invention, the electrode rod is coated on a resistive surface. When RF power is transmitted through the electrode rod, the heating element penetrates into the inner side of the surface coating of the electrode rod because the RF current flows to the base material within the surface coating. As a result, the heating element is moved away from the surface of the electrode rod, reducing the likelihood of it reacting with oxygen in the atmosphere.

[0050] Furthermore, according to a third aspect of the present invention, an electrode rod with a surface-coated structure suitable for RF power transmission can be provided.

[0051] Furthermore, according to a fourth aspect of the present invention, an electrode rod with a surface-coated structure that has resistivity to heat generated by the skin effect can be provided.

[0052] Furthermore, according to a fifth aspect of the present invention, an electrode rod having a surface-coated structure exhibiting good brazing properties can be provided.

[0053] Furthermore, according to a sixth aspect of the present invention, a base may be provided, the base being provided with an RF power transmission electrode rod having the aforementioned characteristics.

[0054] In addition, according to a seventh aspect of the present invention, a base may be provided having a surface covering structure and an integral electrode rod.

[0055] Furthermore, according to an eighth aspect of the invention, a ceramic base is provided in which, in order for the electrode rod to receive power, the tapered portion AA is placed at a position separated from the ceramic plate (especially at a position where the temperature is significantly reduced in semiconductor processes), and the shape of the joint is designed to be streamlined, such as trapezoidal, to avoid forming sharp corners, thereby improving the durability of the ceramic base and extending its service life, so that it has good high-frequency transmission characteristics for a long time even in oxidation-resistant and corrosion-resistant environments. Attached Figure Description

[0056] To aid in understanding the invention, embodiments of the invention are provided in the accompanying drawings, which are included as part of the detailed description, and together with the detailed description serve to illustrate the technical ideas of the invention.

[0057] Figure 1 This is a diagram used to illustrate the electrode section of an existing base.

[0058] Figure 2A and Figure 2B These are, respectively, perspective views and cross-sectional views schematically illustrating the shape of an electrode rod according to an embodiment of the present invention.

[0059] Figure 3 This is a schematic cross-sectional view of an electrode rod structure according to another embodiment of the present invention.

[0060] Figure 4 This is a partial cross-sectional view schematically illustrating a base according to an embodiment of the present invention.

[0061] Figure 5 This is a cross-sectional view schematically illustrating the structure of a base according to another embodiment of the present invention.

[0062] Figure 6 This is a flowchart of the metal nitride film formation process of the electrode rod of the base according to an embodiment of the present invention.

[0063] Figure 7 This is a graph showing the power loss measurement results.

[0064] Figure 8 It is a graph plotting the resistance measurements of each rod material before and after oxidation treatment.

[0065] Figure 9 This is a diagram used to illustrate another electrode portion of an existing ceramic substrate.

[0066] Figure 10A This is a diagram illustrating the structure of a ceramic base according to another embodiment of the present invention.

[0067] Figure 10B This is a diagram illustrating the structure of a ceramic base according to another embodiment of the present invention.

[0068] Figure 11 yes Figure 10A and Figure 10B An enlarged view of the peripheral portion of the present invention, including the tapered portion AA, between the extension portion and the power connection portion.

[0069] Figure 12 An embodiment of the ceramic substrate of the present invention is shown, which is disposed in the process chamber of a semiconductor device.

[0070] Figure 13This is a flowchart illustrating the coating formation process of the electrode rod of the ceramic substrate according to an embodiment of the present invention.

[0071] Explanation of reference numerals in the attached figures

[0072] 1. 150: Electrode rod assembly

[0073] 10: Electrode rod

[0074] 10', 131: First shot

[0075] 12, 12': Base material

[0076] 22: Second parent material

[0077] 24: Second metal nitride film

[0078] 20, 132: Second pole

[0079] 14, 14', 24, 141, 142: Metal nitride film

[0080] 100, 200: (Ceramic) base

[0081] 30, 110: Ceramic slab

[0082] 31: Upper electrode rod

[0083] 32: Lower electrode rod

[0084] 34: Support

[0085] 36: Conductive pad

[0086] 37: Brazing filler metal

[0087] 35, 111: Electrodes

[0088] 112: Electrode pad

[0089] 120: Support hole

[0090] 130: Extension

[0091] 133: Power connection section

[0092] 145: Bonding layer

[0093] 150: Electrode rod assembly

[0094] 151: First conductive filler

[0095] 152: Second conductive filler

[0096] 162: Brazing

[0097] 190: Opening

[0098] 191: Thread

[0099] 300: Process Chamber

[0100] 310: Shaft

[0101] 320: Connecting bracket

[0102] A, B, C, D, E, F: Location

[0103] AA: Conical section

[0104] BB: Bottom surface

[0105] E1, E2: Exposed surfaces

[0106] LL: Length

[0107] S: Joint

[0108] S110: Plasma pretreatment process

[0109] S120: Bonding layer formation process

[0110] S130: Reactive deposition process

[0111] PP: End

[0112] SS: Upper surface

[0113] w: Extension width

[0114] θ: Inclination angle Detailed Implementation

[0115] The present invention will now be described in detail with reference to the accompanying drawings. In these drawings, the same constituent elements will be indicated by the same reference numerals wherever possible. Furthermore, detailed descriptions of known functions and / or structures will be omitted. The following disclosure focuses on explaining the parts necessary to understand the operation of various embodiments, and omits descriptions of elements that may obscure the main points of the explanation. Additionally, some constituent elements in the drawings may be enlarged or omitted, or shown in a schematic manner. The sizes of the constituent elements do not perfectly reflect their actual sizes; therefore, the content described herein is not limited to the relative sizes or spacing of the constituent elements shown in the various drawings.

[0116] In describing embodiments of the present invention, detailed descriptions of relevant prior art will be omitted when it is determined that such detailed descriptions would unnecessarily obscure the spirit of the invention. Furthermore, the terminology used below, defined in consideration of its functionality within the present invention, may be varied according to the intent or convention of the user or practitioner. Therefore, definitions should be based on the entire contents of this specification. The terminology used in the detailed description is for the purpose of describing embodiments of the invention and should not be considered limiting. Unless expressly stated otherwise, a single quantity includes the meaning of multiple quantities. In this description, expressions such as "comprising" or "having" are used to indicate certain characteristics, numbers, steps, actions, elements, portions or combinations thereof, and should not be construed as excluding the presence or possibility of one or more other characteristics, numbers, steps, actions, elements, portions or combinations thereof other than those described.

[0117] In addition, terms such as "first" and "second" can be used to describe multiple constituent elements, but the constituent elements are not limited to these terms. These terms are only used to distinguish one constituent element from other constituent elements.

[0118] Furthermore, in the specification of this invention, the nitride film in "nitride film" or "metal nitride film" can be a nitride film of one metal element or a nitride film of two or more metal elements. Additionally, in the specification of this invention, a nitride film of metal element A can be represented as A nitride film or AN. In this case, the expression "A nitride film or AN" can be used to refer to a binary metal element nitride film in which a portion of metal element A is replaced or substituted with another metal element, or a multi-element metal element nitride film containing another metal element. Similarly, a binary metal element nitride film can be represented as "nitride film of A and B", (A, B)N, or ABN, and this expression can be used to refer to a ternary metal element nitride film or a multi-element metal nitride film containing additional metal elements besides A or B. For example, in the specification of this invention, AlCrN can be used not only to mean including a binary nitride film, but also to mean including a ternary metal nitride film such as AlCrTiN.

[0119] In the specification of this invention, "electrical connection" of two components includes two components being in direct contact and electrically connected, or being electrically connected by placing one or more other components between the two components.

[0120] Furthermore, in the specification of this invention, terms such as "above" or "on" of an object refer not only to the position that is in direct contact with the surface of the object, but also to the position in which other components are placed without direct contact.

[0121] Figure 2A and Figure 2BThese are, respectively, perspective views and cross-sectional views schematically illustrating the shape of an electrode rod according to an embodiment of the present invention.

[0122] Reference Figure 2A and Figure 2B The electrode rod 10 has a column shape that extends in a long strip along the length direction. Figure 1 The shape of the electrode rod is exemplary, and the invention is not limited thereto. The electrode rod can also be any shape other than a cylinder, such as a triangular prism or a square prism. In addition, the ends of the electrode rod are planar in the drawings, but this is not a limitation. At least one end of the electrode rod may be curved.

[0123] The electrode rod 10 includes a base material 12 and a metal nitride film 14 on the surface of the base material 12. In this invention, the metal nitride film 14 can be in direct contact with the base material 12, or an additional material layer can be placed between the base material 12 and the metal nitride film 14.

[0124] In this invention, preferably, the base material 12 has low impedance and is paramagnetic. Exemplarily, the base material 12 may be made of Mo, W, or alloys thereof, which are paramagnetic materials.

[0125] As shown in the figure, a metal nitride film 14 is formed on the surface of the base material 12. The metal nitride film 14 extends along the outer peripheral surface in the length direction of the base material 12.

[0126] On the other hand, in this invention, the metal nitride film 14 of the electrode rod 10 has a higher impedance than the base material 12, thus requiring the design of a connection portion for smoothly connecting the electrode rod 10 to the RF current of other components. Therefore, in this invention, one end of the electrode rod 10 may include an exposed surface E1 without the metal nitride film 14. Additionally, the other end of the electrode rod 10 may include an exposed surface E2 without the metal nitride film 14.

[0127] In this invention, the exposed surfaces E1 and E2 of the electrode rod 10 can be more electrically connected to adjacent components. For example, as described below, the exposed surface E1 can be in direct contact with the conductive pad of the electrode, or it can be electrically connected to the conductive pad through a conductive material layer (such as a bonding material). Additionally, the other exposed surface E2 can be electrically connected to an external power source.

[0128] Furthermore, in this invention, the exposed surfaces for electrical connection at one end of the electrode rod 10, i.e., the exposed surfaces E1 and E2 of the electrode rod, can extend from the bottom surface of the cylinder to the side surface. In this case, the extension width w of the exposed surface can be appropriately designed. Of course, such an extension of the exposed surface can be provided at the other end of the electrode rod 10. Additionally, the aforementioned extension of the exposed surface can be achieved by chamfering the end of the electrode rod 10.

[0129] In this invention, preferably, the metal nitride film 14 may include a metal nitride film containing Cr. More preferably, the metal nitride film 14 may be a binary or ternary metal nitride film containing Al and Cr. For example, the metal nitride film 14 may include at least one nitride film selected from the group consisting of AlCrN, AlCrSiN, AlCrSiWN, and AlTiCrN. Furthermore, in this invention, the metal nitride film 14 may be a multilayer film in which layers of different compositions are laminated.

[0130] In this invention, the metal nitride film 14 has a higher resistivity than the base material 12. The specific resistivity of Mo and W, which constitute the base material 12, is shown in the table below.

[0131] Table 1

[0132] distinguish Specific resistivity (Ω·cm, @20℃) Mo <![CDATA[5.2*10 -6 ]]> W <![CDATA[5.6*10 -6 ]]>

[0133] In this invention, preferably, the resistivity (@20℃) of the metal nitride film 14 is 1*10⁻⁶. -4 Below Ω·cm, 1*10 -3 Below Ω·cm, 1*10 -2 Below Ω·cm, 1*10 -1 Below Ω·cm, below 1Ω·cm, below 1.5Ω·cm, below 2Ω·cm, below 5Ω·cm, below 10Ω·cm, or below 20Ω·cm. On the other hand, the ratio of the resistivity of the metal nitride film 14 to the resistivity of the substrate 12 can be 10. 2 Above, 10 3 Above, 10 4 More than or 10 5 above.

[0134] In the specification of this invention, the resistivity can be calculated by multiplying the surface resistance value obtained by multiplying the resistance value of the film measured by the four-point probe method by the correction factor (CF) and then multiplying the film thickness.

[0135] In this invention, the metal nitride film 14 may further include one or more substrate layers. For example, the substrate layer may be a CrN substrate layer.

[0136] In this invention, when the metal nitride film 14 is implemented as AlCrN, the resistivity of the metal nitride film 14 can be controlled by the relative contents of Al and Cr.

[0137] For example, in the case of Al 1-x Cr x In the composition of the metal nitride film 14 represented by N (where x is the atomic ratio), the specific resistance of the metal nitride film 14 can be controlled by controlling the atomic ratio of Cr (x) (i.e., Cr / (Al+Cr)).

[0138] The resistivity of the CrN film deposited by arc ion deposition is 3*10. -4 Ω·cm. The resistivity can be determined from Al. 1-x Cr x The resistivity varies depending on the Al and Cr content in N and the nitrogen concentration during film formation. AlCrN films with an x ​​≥ 0.2–0.8 formed by arc ion plating can have a value of 1–15 Ω·cm, while AlCrN films with an x ​​≥ 0.5 can have a value of approximately 7–9 Ω·cm. In this invention, the resistivity can be adjusted according to the Al to Cr ratio.

[0139] In this invention, in order to achieve the preferred resistivity value, Al1 -x Cr x The x-value of the N-film is preferably 0.1 or higher, 0.15 or higher, 0.2 or higher, or 0.25 or higher. Alternatively, the x-value is preferably 0.9 or lower, 0.8 or lower, 0.75 or lower, 0.70 or lower, 0.65 or lower, 0.6 or lower, 0.55 or lower, or 0.5 or lower.

[0140] Furthermore, the resistivity measurements of various metal nitride films formed on the Al2O3 substrate are shown in Table 2 below.

[0141] Table 2

[0142] Membrane composition Specific resistance (Ω·cm) <![CDATA[Al 0.45 Cr 0.55 N]]> 7～9 CrN <![CDATA[3*10 -4 ]]> AlCrSiWN <![CDATA[7*10 -1 <!-- 8 -->]]> AlCrSiN <![CDATA[1.54*10 -2 ]]>

[0143] Figure 3 This is a schematic cross-sectional view illustrating the electrode rod structure of another embodiment of the present invention. (Refer to...) Figure 3 The electrode rod assembly 1 is provided with a first rod 10'. The first rod 10' includes a base material 12' and a metal nitride film 14' covering the surface of the base material. Additionally, exposed base material surfaces without the metal nitride film are formed at both ends of the first rod 10'. The base material 12' and the metal nitride film 14' can be formed from a reference... Figure 2A , Figure 2B The electrode rod 10 described is made of the same material.

[0144] On the other hand, a second rod 20 is attached to the front end of the first rod 10'. The first rod 10' and the second rod 20 can be joined by a joint S. The joint S can be provided by welding or brazing Au-Ni alloy bonding material or Ti-containing alloy bonding material at an appropriate temperature.

[0145] In this invention, the second rod 20 may include a second base material 22 and a second metal nitride film 24 encapsulating the second base material. Preferably, the second base material 22 is exposed at both ends of the second rod 20.

[0146] In this invention, the second base material 22 and the second metal nitride film 24 can be made of the same material as the (first) base material 12' and the (first) metal nitride film 14'.

[0147] In contrast, the second base material 22 may comprise a metal of a different material than the (first) base material 12'. In this case, a metal or alloy having a similar coefficient of thermal expansion to the electrode pad can be used as the second base material 22. For example, when Mo, W, or alloys thereof are used as the electrode pad, an alloy with a low coefficient of thermal expansion (such as Kovar) can be used as the second base material 22. In this case, when a nickel-based alloy (such as Kovar) is used as the second base material 22, it may not be necessary to provide [the second base material 22]. Figure 3 The second metal nitride film 24.

[0148] exist Figure 3 In this configuration, the second rod 20 of the electrode rod assembly 1 can be electrically connected to the electrode pad, and the first rod 10' of the electrode rod assembly 1 can be electrically connected to an external power source. Of course, the opposite connection method is also possible.

[0149] Above, refer to Figure 3 This describes a scenario where two electrode rods are connected in series to form an electrode rod assembly, but the invention is not limited to this. For example, an electrode rod assembly consisting of three or more electrode rods is also possible. Some or all of the electrode rods constituting these electrode rod assemblies may have the same characteristics as... Figure 2A , Figure 2B The electrode rod structure is described in detail.

[0150] Figure 4 This is a partial cross-sectional view schematically illustrating a base according to an embodiment of the present invention.

[0151] Reference Figure 4The (ceramic) base 100 includes: a ceramic plate 110; an electrode 111 embedded in the ceramic plate 110; and an electrode pad 112 for electrically connecting the electrode 111. An opening 190 is provided on the ceramic plate 110 to expose the electrode pad, and an electrode rod 10 is attached to the opening 190. The electrode rod 10 supplies power (e.g., radio frequency (RF) power) to the electrode 111.

[0152] On the other hand, additionally, a support eyelet 120 for supporting the electrode rod 10 may be provided within the opening 190 along the outer periphery of the electrode rod 10. The support eyelet 120 can be threaded into the opening 190. For this purpose, a thread 191 is formed on a portion of the inner peripheral surface of the opening 190, and correspondingly, a connection structure (e.g., an external thread) for fastening to the thread 191 (e.g., an internal thread) may be provided on the outer side of the support eyelet 120.

[0153] On the other hand, although not shown in the accompanying drawings, in this invention, in addition to the electrode 111, the ceramic plate 110 may also include a heating element (not shown) for heating a substrate placed on the ceramic plate and an electrode pad for supplying power to the heating element. Therefore, although the structure of the electrode rod 10 of the electrode 111 has been described in this specification, this structure can also be directly applied to the heating element (not shown) and the electrode rod for connecting the electrode rod.

[0154] In this invention, the ceramic plate 110 can be configured to have electrodes 111 and / or heating elements (not shown) spaced apart between ceramic materials at predetermined intervals. The ceramic plate 110 can be configured to stably support the substrate to be processed while simultaneously enabling heating using the heating element (not shown) and / or plasma-enhanced chemical vapor deposition (PECVD) using the electrodes 111. The ceramic plate 110 can be formed as a plate-like structure with a predetermined shape. As an example, the ceramic plate 110 can be formed as a circular plate-like structure, but is not necessarily limited to this. The ceramic material can be at least one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, autoclaved lightweight concrete (AlC), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, mullite, and AlF3, preferably aluminum nitride (AlN).

[0155] An electrode pad 112, which is electrically connected to the electrode 111, is exposed at the opening 190 of the ceramic plate 110. The end connection surface of the electrode rod 10 is electrically connected to the electrode pad 112 by means of bonding (such as welding or brazing).

[0156] In this invention, the electrode 111, the electrode pad 112, the support hole 120, and the heating element (not shown) may be formed of conductive materials (e.g., tungsten (w), molybdenum (Mo), silver (Ag), copper (Cu), nickel (Ni), gold (Au), platinum (Pt), niobium (Nb), titanium (Ti), or alloys thereof).

[0157] In this invention, the electrode rod 10 has low resistance, i.e., low impedance, and is implemented as a paramagnetic material. As described above, the base material of the electrode rod 10 is made of paramagnetic materials such as Mo, W, or alloys thereof. Therefore, compared with Ni or Ni alloys, the electrode rod 10 has a greater skin depth, and as a result, exhibits improved impedance characteristics.

[0158] On the other hand, compared to Ni or Ni alloys, molybdenum, tungsten, and their alloys, which serve as the base material for the electrode rod 10, exhibit a tendency to oxidize easily by reacting with oxygen. Therefore, as the base material heats up with the applied RF current, the electrode rod 10 oxidizes and deteriorates.

[0159] To address the problems described above, the present invention provides a metal nitride film on the surface of the base material of the electrode rod 10. Furthermore, in this invention, the metal nitride film is formed on the outer peripheral surface of the electrode rod 10, while no metal nitride film is formed at the end of the electrode rod 10 that connects to other components. Thus, the electrode rod 10 can provide good electrical connection with adjacent components while supplementing the antioxidant properties of the base material.

[0160] Furthermore, in this invention, the electrode rod 10 has controllable electrical characteristics. In this invention, the resistivity of the metal nitride film and the metal substrate, and their ratio, can be controlled within an appropriate range.

[0161] Furthermore, in this invention, the metal nitride film can be appropriately designed according to the frequency and power of the RF current introduced into the electrode rod 10. When the RF power frequency increases, the skin depth of the substrate decreases, and the heat generation on the substrate surface can increase. In this case, it is preferable to increase the thickness of the metal nitride film.

[0162] For example, when the RF power frequency of the electrode rod 10 is 10 MHz, the skin depth of the Mo matrix is ​​about 38 μm, and when the RF power frequency is 100 MHz, the skin depth of the Mo matrix is ​​12 μm.

[0163] In this invention, when using an RF power frequency of 10MHz to 40MHz (e.g., 13.56MHz, 27.12MHz, etc.), the thickness range of the metal nitride film is preferably 4μm to 10μm.

[0164] In this invention, one end of the electrode rod 10 can be joined to the electrode pad 112 by welding or brazing. For this purpose, a first conductive filler 151 for joining with the electrode pad 112 can be provided at one end of the electrode rod 10.

[0165] Additionally, a second conductive filler 152 may be provided around the electrode rod 10 inside the insertion support hole 120 to fill the space between the support hole 120 and the electrode rod 10. The first conductive filler 151 and the second conductive filler 152 may be provided by welding or brazing Au-Ni alloy bonding material or Ti-containing alloy bonding material at an appropriate temperature.

[0166] In this invention, the amounts of the first conductive filler 151 and the second conductive filler 152 can be appropriately controlled.

[0167] Figure 5 This is a cross-sectional view schematically illustrating the structure of a base according to another embodiment of the present invention.

[0168] Reference Figure 5 In addition to Figure 2A , Figure 2B The electrode rod assembly 1 described in the relevant section replaces... Figure 3 Apart from the electrode rod 10, the base 100 has virtually the same configuration. The electrode rod assembly 1 is provided with the same... Figure 2A , Figure 2B The brazing of the first rod 10' and the second rod 20 of 162 is described in detail, and each component has been... Figure 2A , Figure 2B The description has been provided in the text, so it will be omitted here. On the other hand, as mentioned above, the second metal nitride film 24 may not be provided on the second rod 20.

[0169] Figure 6 This is a flowchart illustrating the metal nitride film formation process of the electrode rod of the base according to an embodiment of the present invention. This embodiment illustrates the formation of an AlCrN film using a metal nitride film.

[0170] Reference Figure 6 In this invention, various deposition methods can be used in the AlCrN formation process, such as physical vapor deposition (PVD) method such as arc ion plating.

[0171] As shown in the figure, the coating of the electrode rod 10 can be formed by a plasma pretreatment process S110, a bonding layer formation process S120, and a reactive deposition process S130.

[0172] First, a plasma pretreatment process S110 is performed on the surface of a base material composed of Mo, W, or alloys thereof. In the plasma pretreatment process S110, the electrode rod base material 12 is loaded into an arc ion plating apparatus or a sputtering apparatus, and a 1×10⁻⁶… -5 The surface of the electrode rod substrate 12 is cleaned by plasma pretreatment at a vacuum level below Torr. This is to ensure optimal coating of the bonding layer and metal nitride film in subsequent processes.

[0173] Next, the bonding layer formation process S120 aims to reduce the internal stress of the metal nitride film to be formed and to facilitate good bonding. The bonding layer may include a metal such as Cr or an alloy thereof. Preferably, the bonding layer may include a Cr nitride or a Cr alloy nitride.

[0174] In this invention, the bonding layer can be formed by arc ion plating or sputtering. For example, in an arc ion plating or sputtering apparatus, a CrN layer with a thickness of 0.1 μm to 4.0 μm can be deposited on the surface of each electrode rod base material 12 as a bonding layer. In this case, a chromium (Cr) target can be pre-loaded into the arc ion plating or sputtering apparatus, and while nitrogen gas is injected into the reactor, the CrN layer can be formed on the surface of the electrode rod base material 12 by PVD under a specified vacuum degree.

[0175] In the reactive deposition process S130, Al and Cr targets or Al-Cr alloy targets are loaded into the arc ion plating equipment, and nitrogen gas is injected into the reactor while PVD is applied at a depth of approximately 1×10⁻⁶. -2 Under a high vacuum, the AlCrN thickness is formed to be 1.0 μm to 10.0 μm. For AlCr alloy targets, AlCr alloy targets containing aluminum (Al) and chromium (Cr) in a specified ratio (e.g., 7:3 at%) can be used. Conversely, when using Al and Cr targets, the Al / Cr ratio can be adjusted by changing the current of each target.

[0176] As described above, the ends of the base material can be appropriately masked to prevent the formation of a metal nitride film at the ends of the electrode rods (10, 10'). For example, the ends of the base material can be masked by providing adhesive tape or photoresist film to the ends of the base material or by using a jig. Conversely, the base material can be exposed by machining the ends of the electrode rods 10 where the metal nitride film is formed, thereby achieving an exposed surface for the electrode rods.

[0177] <Experiment Example 1: Resistivity Measurement Experiment of AlCrN Film>

[0178] Using alloy targets with different Al and Cr contents, AlCrN films with an area of ​​30 mm × 30 mm and a thickness of 5 μm to 7 μm were formed on the surface of Al2O3 substrates by arc ion plating. Energy dispersive spectroscopy (EDS) analysis was performed on the AlCrN films formed for each target to determine the Al and Cr ratios. The resistivity of the AlCrN films was measured using a Loresta-GP instrument from Mitsubishi Chemical Co., Ltd., employing the four-point probe method. The resistivity of the AlCrN films ranged from 1 to 15 Ω·cm.

[0179] The composition percentages (at%) of each component in the EDS analysis are shown in Table 3 below.

[0180] Table 3

[0181]

[0182] <Experiment Example 2: RF Power Loss Measurement Experiment of Electrode Rod>

[0183] RF power loss was measured using a Φ4×330mm rod with different materials and coating compositions. The rods used for measurement included Ni rods, Mo rods, AlCrN / Mo rods, W rods, and AlCrN / W rods. The AlCrN film composition used was composition #2 from Experimental Example 1.

[0184] Figure 7 This is a graph showing the power loss measurement results. (Example) Figure 6 As shown, in the radio frequency (RF) power loss rate calculated based on measured impedance values, it can be confirmed that, compared to Ni, Mo or AlCrN / Mo with an AlCrN film on its surface, and W or AlCrN / W with an AlCrN film on its surface, have a power loss rate that is reduced by approximately 40%. The results described above demonstrate that, in terms of power loss, Mo, W, AlCrN / Mo, and AlCrN / W electrode rods exhibit superior characteristics compared to Ni.

[0185] <Experimental Example 3: Antioxidant Properties of the Electrode Rod>

[0186] The antioxidant properties were confirmed based on the material and coating composition of the Φ2x330mm electrode rod.

[0187] Mo, MoW, AlCrN / Mo, and AlCrN / MoW electrodes were used as electrode rods. The AlCrN film used composition #2 from Experimental Example 1.

[0188] Each rod was oxidized in a box furnace at 700°C for 10 hours. The resistance of each rod before and after oxidation was measured. The measurement was performed using a HIOKI Resistance Meter (RM3545) at an INT of 10 mΩ.

[0189] Figure 8 It is a graph plotting the resistance measurements of each rod material before and after oxidation treatment.

[0190] from Figure 8 It can be confirmed that the resistance of each rod material increases due to the oxidation treatment. However, for the rod with the AlCrN film formed, it can be confirmed that the rate of change of resistance before and after heat treatment is low, and the resistance value is also low.

[0191] Furthermore, in this invention, the base is a semiconductor device for processing substrates (semiconductor wafers, glass substrates, flexible substrates, etc.) for various applications. As described below, the semiconductor device is provided with electrodes 111, which function as high-frequency electrodes to perform process treatments on the corresponding substrates, such as dry etching using plasma or plasma-enhanced chemical vapor deposition. In addition, to support the corresponding substrates, the electrodes 111 can also be used as chuck electrodes, which function as electrostatic chucks. Furthermore, in this invention, the base may also be provided with heating wires (or heating elements / heating electrodes) for heating the corresponding substrates at a specified temperature.

[0192] The high-frequency electrode, electrostatic chuck electrode, and heating wire, serving as the electrode (or conductor) 111, can be composed of conductive metal materials (such as silver (Ag), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), and titanium (Ti), or alloys thereof). The high-frequency electrode can receive power in a semiconductor manufacturing process and perform process treatments (such as plasma-enhanced chemical vapor deposition) on the substrate located on the upper surface of the base. The electrostatic chuck electrode can receive a bias voltage from the power supply and generate electrostatic force in a semiconductor manufacturing process, thereby clamping the substrate located on the upper surface of the base. When the substrate is unloaded, discharge can be achieved by receiving a reverse bias voltage, thereby releasing the clamp. Furthermore, the heating wire (or heating element / heating electrode) can be formed as a plate-shaped coil or a flat plate based on a resistance wire with a specified resistance, and can also be formed as a multilayer structure for precise temperature control. This heating wire (or heating element / heating electrode) can receive power and perform the function of heating the substrate located on the upper surface of the base to a constant temperature, so as to perform a smooth deposition and etching process in semiconductor manufacturing process.

[0193] Therefore, in the present invention, the electrode 111 of the ceramic base is schematically described as the high-frequency electrode for supplying high-frequency (RF) power through the electrode rod, but it is not limited thereto. It should be noted in advance in the present invention that the relevant description of the electrode of the ceramic base can be applied similarly even when it is used as a chuck electrode for an electrostatic chuck or an additional heating element for power supply through the electrode rod.

[0194] The following will refer to the attached figures ( Figures 10A to 13 To illustrate another aspect of the invention, the following description will be provided. In this case, in the various figures, the same constituent elements will be represented by the same reference numerals whenever possible. Furthermore, even if the reference numerals are not the same, if the names of the constituent elements are the same, then the constituent elements can be the same structure and can perform the same function. In particular, in… Figures 2A to 8 The same constituent elements described in the description may be additionally applied to Figures 10A to 13 In this context, detailed descriptions of the same functions and / or configurations described above will be omitted. Additionally, Figures 10A to 13 The same constituent elements described in the description may also be applied to other applications. Figures 2A to 8 .

[0195] Figure 10A This is a diagram illustrating the structure of a ceramic base 100 according to another embodiment of the present invention.

[0196] Reference Figure 10A In another embodiment of the present invention, the ceramic base 100 may include a ceramic plate 110 on which electrodes 111 are disposed. The ceramic plate 110 may include: an electrode pad 112 connected to the electrodes 111; and an electrode rod assembly 150, one end of which is connected to the electrode pad 112 and used to supply power to the electrodes 111. In this case, the electrode rod assembly 150 includes a first rod 131 and an extension 130 including a second rod 132.

[0197] That is, in Figure 10A In this embodiment, the electrode rod assembly 150 may include: an extension 130 connected to the electrode pad 112; and a power connection portion 133 disposed at the end of the tapered portion AA of the extension 130. That is, the electrode rod assembly 150 includes an extension 130, which includes a first rod 131 and a second rod 132, and at its end includes the tapered portion AA and the power connection portion 133.

[0198] In this case, the extension 130 may include a first rod 131 and a second rod 132 brazed 162 to the first rod 131. The second rod 132 may be made of a metallic material whose coefficient of thermal expansion differs from that of the electrode pad 112 material by 3 or less. For example, the coefficient of thermal expansion of the electrode pad 112, the first rod 131, and the power connection portion 133 may be 4.5 to 5.6 μm / °C, and may be made of Mo, W, or alloys thereof (MoW). The coefficient of thermal expansion of the second rod 132 may be 4.9 to 6.2 μm / °C, and may be made of an Fe-Ni-Co alloy (e.g., a Kovar product). The difference between the coefficient of thermal expansion of the second rod 132 and that of the first rod 131, which includes the power connection portion 133, is preferably 3 or less.

[0199] Figure 10B This is a diagram illustrating the structure of a ceramic base 200 according to another embodiment of the present invention. In this case, a rod is connected to the electrode pad 112 and extends to the power connection portion 133.

[0200] Reference Figure 10B In another embodiment of the present invention, the ceramic base 200 may include a ceramic plate 110 on which electrodes 111 are disposed. The ceramic plate 110 may include: an electrode pad 112 connected to the electrodes 111; and an electrode rod assembly 150, one end of which is connected to the electrode pad 112 and used to supply power to the electrodes 111.

[0201] In this case, the electrode rod assembly 150 may include: a first rod (or extension) 131 connected to the electrode pad 112; and a power connection portion 133 disposed at the end of the tapered portion AA of the first rod (or extension) 131. That is, the electrode rod assembly 150 includes a first rod (or extension) 131 consisting of a rod, and includes a tapered portion AA and a power connection portion 133 at the end of the first rod (or extension) 131. For example, the coefficient of thermal expansion of the first rod (or extension) 131 including the power connection portion 133 may be 4.5 to 5.6 μm / ℃, and may be made of Mo, W, or alloys thereof.

[0202] That is, such as Figure 10A and Figure 10B As shown, the electrode rod assembly 150 of the present invention may include: an extension (130, 131) connected to the electrode pad 112; and a power connection portion 133 disposed at the end of the tapered portion AA of the extension (130, 131).

[0203] Additionally, the ceramic base 100 may include a support eyelet 120 that engages with the electrode rod assembly 150. For example, the electrode rod assembly 150 may engage with the support eyelet 120, which may be fastened to the electrode 111 via threads 191 of the ceramic plate 110.

[0204] On the other hand, as described above, although not shown in the accompanying drawings, in this invention, the ceramic plate 110 may also include a heating element (electrode) (not shown) and a corresponding electrode rod. Therefore, although the structure related to the electrode rod assembly 150 of the electrode 111 has been described in this invention, it should be noted that this structure can also be directly applied to the heating element (electrode) (not shown) and the corresponding electrode rod.

[0205] That is, the ceramic plate 110 can be configured to have electrodes 111 and / or heating elements (electrodes) spaced apart between ceramic materials at predetermined intervals. The ceramic plate 110 is configured to stably support the substrate to be processed placed on its upper surface SS while being heated by the heating elements (electrodes) and / or used as an electrostatic chuck for electrodes 111 or to perform semiconductor processes using plasma. The ceramic plate 110 can be formed into a plate-like structure with a predetermined shape. As an example, the ceramic plate 110 can be formed into a circular plate-like structure, but is not necessarily limited to this. The ceramic material can be at least one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, autoclaved lightweight concrete (AlC), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, mullite, and AlF3, preferably aluminum nitride (AlN). Furthermore, each ceramic powder may selectively contain about 0.1% to 10% yttrium oxide powder, preferably about 1% to 5% yttrium oxide powder or MgO, TiO2 powder, etc.

[0206] Electrode pad 112 is embedded in ceramic plate 110 such that the electrode pad 112 is partially exposed on the bottom surface of a designated aperture portion of ceramic plate 110. The end face of electrode rod assembly 150 is electrically connected to electrode pad 112 by brazing.

[0207] Electrode 111, electrode pad 112, electrode rod assembly 150, support eye 120, etc., may be composed of conductive materials, such as tungsten (w), molybdenum (Mo), silver (Ag), platinum (Pt), palladium (Pd), nickel (Ni), gold (Au), niobium (Nb), titanium (Ti), or alloys thereof.

[0208] In particular, in this invention, preferably, the electrode rod assembly 150 has low impedance and is paramagnetic. Exemplarily, the electrode rod assembly 150 may be made of a base material of Mo, W, or alloys thereof, and an antioxidant coating is provided on the surface of the base material of the electrode rod assembly 150. As described above, for example, in Figure 10AIn this configuration, the first rod 131, including the electrode pad 112 and the power connection portion 133, can be made of Mo, W, or alloys thereof, and the second rod 132 can be made of an Fe-Ni-Co alloy (e.g., a Kovar product). Additionally, for example, in... Figure 10B In the first rod (or extension) 131, including the power connection part 133, the coefficient of thermal expansion can be 4.5 to 5.6 μm / ℃, and it can be made of Mo, W or alloys thereof.

[0209] In this invention, preferably, the antioxidant coating may include metal nitride films 141 and 142. Exemplarily, the metal nitride film may include AlN, more preferably, it may include TiN, TiAlCrN, TiAlN, and AlCrN. Thus, a ceramic substrate 100 can be provided, which possesses the thermal, electrical (magnetic) and mechanical properties required in the manufacturing and processing environment of the ceramic substrate 100, and also has advantages in terms of processability and material cost.

[0210] exist Figure 10A In the ceramic base 100 of the present invention, one side of the electrode rod assembly 150 is joined inside the support hole 120, and may include a first rod 131 and a second rod 132 connected by brazing. The first rod 131 and the second rod 132, as extensions 130, may be formed as a single integral rod, or they may be joined as described above. One end face of the second rod 132 may be brazed together using an electrode pad 112 and a first conductive filler 151, and the first rod 131 may be brazed together with the other end face of the second rod 132 using a second conductive filler 152. For example, the conductive filler (151, 152) may be Au-Ni metal filler, etc. Conductive filler (152) for filling the space between the support hole 120 and the rods (131, 132) may be provided around the rods (131, 132) inserted inside the support hole 120.

[0211] The electrode pad 112 may be made of Mo, W, or alloys thereof. Since the second rod 132 is close to the electrode 111, heat loss and thermal stress occur. To prevent heat loss and reduce cracking caused by thermal stress, it is preferable to use a metal material with a coefficient of thermal expansion difference of 3 or less compared to the electrode pad 112 material, as described above. In particular, in this invention, to prevent oxidation (corrosion), the surface of the electrode rod assembly 150 may include metal nitride films 141 and 142; that is, the surface of the second rod 132 may include a metal nitride film 141, and the surface of the first rod 131 may include a metal nitride film 142. Depending on the circumstances, a metal nitride film 141 may not be necessary on the surface of the second rod 132, but it may be formed on the surface of the second rod 132 as required.

[0212] In addition, the electrode rod assembly 150 includes a power connection portion 133, which has a different diameter from the extension portions (131, 132, 130) and extends from the end of the extension portion 130 and is formed by tapering.

[0213] For each brazing joint as described above, firstly, the first conductive filler 151 is pre-injected into the bottom surface of the opening 190, that is, pre-injected around the exposed portion of the electrode pad 112. The second rod 132 is then pushed into the inside of the support hole 120 so that one end face of the second rod 132 is in close contact with the electrode pad 112. Next, the second conductive filler 152 is fully injected into the upper part of the other end face of the second rod 132, and after the injected second conductive filler 152 is in close contact with one end face of the first rod 131, high-temperature heating and cooling are performed.

[0214] exist Figure 10B In the ceramic base 200 of the present invention, except that the second rod 132 is omitted, similar to the method described above, one end face of the first rod or extension 131, which consists of a first rod 131, can be brazed together by an electrode pad 112 and a first conductive filler 151. Conductive filler (152) for filling the space between the support hole 120 and the rod 131 can be provided around the rod 131 inserted into the support hole 120.

[0215] By using the ceramic bases 100 and 200 of the present invention as described above, the power connection portion 133 of the electrode rod assembly 150 can be connected to a power source and power can be supplied to the electrode 111 via the electrode pad 112, thereby performing the functions of semiconductor processes (such as dry etching using plasma or plasma-enhanced chemical vapor deposition) or electrostatic chucks, and the substrate to be processed in semiconductor processes (e.g., semiconductor wafers, glass substrates, and flexible substrates) can be heated by using the heat (or high frequency) generated in the heating element (electrode).

[0216] In particular, the electrode rod assembly 150 can be made of an alloy containing Mo, W, or one or more of these metals in a greater weight percentage (wt%) than other metals (e.g., MoW, MoNi, and WNi). To prevent oxidation (corrosion), a metal nitride film 141, 142 is included on the surface of the electrode rod assembly 150, thereby effectively preventing oxidation of the electrode rod assembly 150 and eliminating factors that increase impedance with use. Energy loss converted into heat in the electrode rod assembly 150 can be eliminated by reducing changes such as the increase in impedance of the electrode rod assembly 150, thereby allowing electrical energy to be efficiently consumed in plasma discharge. In addition, by reducing the heat generated in the electrode rod assembly 150, no hot-spot zone is formed on the upper end surface of the ceramic plate 110 used to support the substrate, thus improving the thickness and uniformity of the thin film deposited on the substrate and increasing the yield. Furthermore, by eliminating the temperature rise at the ceramic portion in contact with the part fastened to the electrode rod assembly 150, damage to the ceramic substrate 100 based on thermal shock can be reduced, and arc generation in the brazing joint can be decreased. Therefore, the reduced impedance variation of the electrode rod assembly 150 in this invention provides a ceramic substrate 100 with improved durability and can contribute to increasing the yield of semiconductor devices.

[0217] Figure 11 yes Figure 10A and Figure 10B An enlarged view of the peripheral portion 200, including the tapered portion AA, between the extension (130, 131) and the power connection portion 133 of the present invention.

[0218] Reference Figure 11 As described above, a power connection portion 133 is provided at the end of the tapered portion AA of the extension (130, 131) of the electrode rod assembly 150. That is, the tapered portion AA can be machined by taper machining on a machine tool so that the tapered portion AA is included between the extension (130, 131) with different diameters and the power connection portion 133. The machine tool may include a machining device using various methods (milling machine, lathe, machining center (MCT), computer numerical control (CNC), and laser, etc.).

[0219] In this invention, the tapered portion AA of the electrode rod assembly 150 can be machined around the corresponding cylindrical rods (130, 131) at the same inclination angle θ. For example, the overall length of the electrode rod assembly 150 can be 250 mm to 400 mm, and the length LL of the tapered portion AA, which gradually tapers from the extension (130, 131) toward the power connection portion 133, is preferably 1.0 mm to 10.0 mm along the length direction of the extension (130, 131).

[0220] Furthermore, relative to the length direction of the extension 130, the inclination angle θ of the tapered portion AA of the extension (130, 131) can be from 10° to 80°. For a smoother, streamlined connection, it can be less than 45°, less than 40°, less than 35°, less than 30°, less than 25°, or less than 20°. More preferably, the inclination angle θ can be from 12° to 16°. Thus, the cross-section of the tapered portion AA of the extension (130, 131) in the length direction can be trapezoidal.

[0221] Furthermore, the position of the end with the smaller diameter in the tapered portion AA of the extensions (130, 131) can be determined as a specific position for improving oxidation resistance and corrosion resistance. The position of the end with the smaller diameter in the tapered portion AA of the extensions (130, 131) can be, for example, when the ceramic plate 110 is activated, i.e., when the heating element (electrode) is operated (or, if there is no heating element, an external heater can be used), relative to the temperature of the ceramic plate 110, i.e., the lowermost end face of the ceramic plate 110 (refer to...). Figure 12 The location is at least 10% lower than the temperature of the BB (e.g., 650°C, 550°C, and 450°C), preferably at least 20% lower.

[0222] In the embodiment described below, the overall length of the electrode rod assembly 150 is approximately 330 mm, and the diameter of the extensions (131, 132) is 4.6 mm, the diameter of the power connection portion 133 is 4 mm, the length LL of the tapered portion AA is 2.5 mm, and the tilt angle θ is 13.7°. At this time, the lowest end face of the ceramic plate 110 (refer to...) was confirmed. Figure 12 The position located at a temperature (e.g., 650°C, 550°C, and 450°C) lower than 80% of the temperature of the BB in the ceramic plate (refer to the bottom surface of the ceramic plate 110) is located from the bottom surface of the ceramic plate 110 (see the bottom surface of the ceramic plate 110). Figure 12 The position is more than 5mm away from the BB in the middle.

[0223] That is, by placing the tapered portion AA in a location where the temperature in the semiconductor process is significantly lower, separated from the ceramic plate 110, the corresponding portion can be prevented from being oxidized or corroded by the high temperature during use in brazing or deposition processes.

[0224] Figure 12 An embodiment of the ceramic substrate 100 of the present invention is shown, which is disposed in the process chamber 300 of a semiconductor device.

[0225] Reference Figure 12 The process chamber 300 of a semiconductor device used to perform semiconductor processes (such as plasma-enhanced chemical vapor deposition) may be provided with ceramic bases 100 and 200, and the ceramic bases 100 and 200 may be configured to support a shaft 310 with a through hole inside and a predetermined connecting bracket 320.

[0226] In the ceramic bases 100 and 200, multiple electrode rods (130, 132) connected to the multiple electrode pads 112 of the ceramic plate 110 can pass through the interior of the shaft 310 and through the connecting bracket 320 to extend to the outside of the process chamber 300. That is, the power connection portion 133 of the multiple electrode rods (130, 132) can extend to the outside of the process chamber 300, so that the periphery of the end PP of the power connection portion 133 is connected to the power connection unit to receive the required power.

[0227] In this process chamber 300, the ceramic plate 110 is activated by operating the aforementioned heating element, etc., to reach temperatures of 650°C, 550°C, and 450°C, respectively. Temperatures were measured at positions A, B, C, D, E, and F as the plate was moved downwards at predetermined intervals from position A on the outer side of the axis 310 parallel to the lowermost end face BB. The results are shown in Table 4 below, confirming a faster temperature decrease. The electrode rod assembly 150 of the base sample used has an overall length of approximately 330 mm, and the diameter of the extensions (131, 132) is 4.6 mm, while the diameter of the power connection portion 133 is 4 mm. Furthermore, the length LL of the tapered end portion AA is 2.5 mm, and the tilt angle θ is 13.7°.

[0228] Table 4

[0229]

[0230] As shown in the table above, when the temperatures at position A of the lowest end face BB of the ceramic plate 110 are 650°C, 550°C, and 450°C, positions at temperatures more than 10% lower than these temperatures are designated as position C, and positions at temperatures more than 20% lower are designated as position D. Therefore, under the conditions described above, the ends with smaller diameters in the tapered portions AA of the extensions (130, 131) can be located at positions C, D, E, and F, preferably at positions D, E, and F.

[0231] Therefore, by positioning the tapered portion AA at a temperature more than 10% lower than that of the ceramic plate 110, the oxidation resistance and corrosion resistance of the electrode rod assembly 150 can be improved.

[0232] As described above, in order for the electrode rod assembly 150 to receive power, the ceramic base 100 of the present invention can place the tapered portion AA at a position spaced apart from the ceramic plate 110 (especially at a position where the temperature is significantly reduced in semiconductor processes), and design the shape of the tapered portion AA to be streamlined, such as trapezoidal, to avoid forming sharp corners, thereby improving the durability of the ceramic base 100 and extending its service life, so that it has good high-frequency transmission characteristics for a long time even in oxidation-resistant and corrosion-resistant environments.

[0233] Figure 13 This is a flowchart illustrating the coating formation process of the electrode rod assembly 150 of the ceramic substrate 100 according to an embodiment of the present invention.

[0234] Reference Figure 13 First, to form cladding films on the electrode rod assemblies 150, metal nitride films 141 and 142 are formed on the surface of the electrode rod assembly 150 substrate made of Mo, W, or alloys thereof, respectively, a physical vapor deposition (PVD) method such as arc ion plating can be used. As shown in the figure, the cladding films on the electrode rod assemblies 150 can be formed by including a plasma pretreatment process S110, an adhesive layer 145 formation process S120, and a reactive deposition process S130.

[0235] First, in the plasma pretreatment process S110, before the bonding layer 145 is formed, the electrode rod assembly 150 base material is loaded into an arc ion plating apparatus or a sputtering apparatus, and then subjected to a 1×10 -5 The surface of the electrode rod assembly 150 substrate is cleaned by plasma pretreatment at a vacuum level below Torr. This is to ensure optimal coating of the bonding layer 145 and the metal nitride films 141 and 142 in subsequent processes. The electrode rod assembly 150 can be a rod pre-formed with extensions (130, 131), the tapered portion AA, and the power connection portion 133.

[0236] Next, the bonding layer formation process S120 is used to reduce the internal stress of the metal nitride films 141 and 142 and to facilitate good bonding. The bonding layer 145 may comprise a metal such as Cr or an alloy thereof. Preferably, the bonding layer may comprise a Cr nitride or a Cr alloy nitride.

[0237] In this invention, the bonding layer 145 can be formed by arc ion plating or sputtering. For example, in an arc ion plating or sputtering apparatus, a CrN layer with a thickness of 0.1 μm to 4.0 μm can be deposited on the substrate surface of the extensions (130, 131) of each electrode rod assembly 150 as the bonding layer 145. At this time, a Cr target can be pre-loaded in the arc ion plating or sputtering apparatus, and while nitrogen is injected into the reactor, the CrN layer can be formed on the substrate surface of the extensions (130, 131) of the electrode rod assembly 150 under a specified vacuum by PVD, that is, formed on the extensions (130, 131) including the tapered portion AA of the electrode rod assembly 150 and the power connection portion 133.

[0238] In reactive deposition process S130, Al and Cr targets, or AlCr alloy targets, can be pre-loaded into the arc ion plating or sputtering equipment. Simultaneously, nitrogen gas is injected into the reactor of the arc ion plating or sputtering equipment, and PVD is applied at approximately 1×10⁻⁶. -2 Under a vacuum of Torr, the thickness of the metal nitride films 141 and 142 is formed to be 1.0 μm to 10.0 μm. The AlCr alloy target can be an AlCr alloy target containing aluminum (Al) and chromium (Cr) in a specified ratio (e.g., 7:3 at%). Conversely, when using Al and Cr targets, the Al to Cr ratio required for forming the metal nitride films 141 and 142 can be adjusted by changing the current of each target.

[0239] As described above, in order for the electrode rod assembly 150 to receive power, the ceramic bases 100 and 200 of the present invention can place the tapered portion AA at a position separated from the ceramic plate 110 (especially at a position where the temperature is significantly reduced in semiconductor processes), and design its shape to be streamlined such as trapezoidal, so as to avoid forming sharp corners, thereby improving the durability of the ceramic base 100 and extending its service life, so that it has good high-frequency transmission characteristics for a long time even in oxidation-resistant and corrosion-resistant environments.

[0240] As described above, this invention has been illustrated with specific details and limited embodiments, such as specific constituent elements, and accompanying drawings. However, this is only provided to facilitate a more comprehensive understanding of the invention. The invention is not limited to the described embodiments, and various modifications and variations can be made by those skilled in the art without departing from the essential characteristics of the invention. Therefore, the concept of the invention should not be limited to the illustrated embodiments, and all technical ideas equivalent to or having equivalent variations of the appended claims should be interpreted as included within the scope of the invention.

Claims

1. A base comprising a ceramic plate on which electrodes are disposed, wherein, The ceramic plate includes: An electrode pad, connected to the electrode, and An electrode rod has one end connected to the electrode pad, and the electrode rod is used to supply power to the electrode; The electrode rod includes: The extension is connected to the electrode pad, and A power connection portion is provided at the end of the tapered portion of the extension; The electrode rod extends from the extension portion to the tapered portion and the power connection portion, all made of the same material.

2. The base according to claim 1, wherein, The electrode rod has a metal nitride film on the surface of the base material.

3. The base according to claim 1, wherein, The tapered portion is machined by taper machining on a machine tool so that the tapered portion is included between the extension portion and the power connection portion, which have different diameters.

4. The base according to claim 1, wherein, The inclination angle of the tapered portion of the extension is 10° to 80° relative to the length direction of the extension.

5. The base according to claim 1, wherein, The length of the tapered portion of the extension is 1.0 mm to 10.0 mm in the length direction of the extension.

6. The base according to claim 1, wherein, The position of the tapered portion of the extension with the smaller diameter end is at a temperature that is more than 10% lower than the temperature of the lowest end face of the ceramic plate.

7. The base according to claim 1, wherein, The position of the tapered portion of the extension with the smaller diameter end is at a temperature that is more than 20% lower than the temperature of the lowest end face of the ceramic plate.

8. The base according to claim 1, wherein, The electrode rod uses Mo, W, or alloys thereof as the base material.

9. The base according to claim 1, wherein, The extension of the electrode rod includes a second rod brazed to the electrode pad and a first rod brazed to the second rod.

10. The base according to claim 9, wherein, The second rod is made of a metal material whose coefficient of thermal expansion differs from that of the electrode pad material by less than 3.

11. The base according to claim 1, wherein, The electrode is a high-frequency electrode, an electrostatic chuck electrode, or a heating element.

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