Optical module

Abstract

In the optical module provided by the invention, each laser assembly comprises a substrate and a laser chip, each laser chip comprises an electric absorption modulation area, and the surface of each electric absorption modulation area is provided with a high-frequency electrode. A reference ground, a high-frequency signal line, a matching circuit, a first connecting part and a second connecting part are respectively formed on the surface of the substrate. In order to enhance the resonance effect and further improve the bandwidth of the laser chip, a third bonding wire is arranged between the first connecting part and the second connecting part, and the third bonding wire is connected with the matching circuit in parallel. In addition, the third bonding wire participates in the resonance peaking circuit, and the third bonding wire also has an inductance effect, so that the inductance value participating in the resonance effect can be increased, and the bandwidth performance of the laser chip is further improved. According to the invention, since the third bonding wire is connected in parallel with the matching circuit, in order to not influence the impedance of the matching circuit, the second connecting part is only electrically connected with the first connecting part, and the electric signal transmitted and output in the third bonding wire is in an open-circuit environment between the third bonding wire and the substrate, so that the effect of the matching circuit is ensured.

Description

Technical Field

[0001] The present disclosure relates to the field of optical communication technologies, and particularly to an optical module. Background Art

[0002] With the development of new services and application models such as cloud computing, mobile Internet, and video, the progress of optical communication technologies has become increasingly important. In optical communication technologies, an optical module, as one of the key components in optical communication devices, can achieve the conversion between optical and electrical signals; during the development of optical communication technologies, it is required that the data transmission rate of the optical module continues to increase.

[0003] The optical module includes an optical emission component, and the optical emission component is one of the important components that determine the transmission rate of the optical module. The optical emission component includes a laser component, and the bandwidth of the laser component will limit the rate supported by the optical emission component. During the packaging process of the laser component, transmission line matching, microwave reflection, high-frequency transmission loss, etc. will directly affect the bandwidth of the laser chip. Summary of the Invention

[0004] Embodiments of the present disclosure provide an optical module to improve the bandwidth of a laser chip.

[0005] The optical module provided by the present disclosure includes:

[0006] A circuit board;

[0007] An optical emission component, electrically connected to the circuit board, for generating and outputting an optical signal, the optical emission component including a laser component; wherein, the laser component respectively includes:

[0008] A substrate, on the surface of which a reference ground, a high-frequency signal line, a matching circuit, a first connection portion, and a second connection portion are respectively formed, wherein the first connection portion is electrically connected to the matching circuit, and the matching circuit is electrically connected to the reference ground; the second connection portion is only electrically connected to the first connection portion;

[0009] A laser chip, disposed on the surface of the reference ground, including an electro-absorption modulation region, on the surface of which a high-frequency electrode is formed; a first wire bond is provided between the high-frequency electrode and the high-frequency signal line to receive the electrical signal output by the high-frequency signal line; a second wire bond is provided between the high-frequency electrode and one end of the first connection portion, and a third wire bond is provided between the other end of the first connection portion and the second connection portion; wherein, the second wire bond is connected to the reference ground through the matching circuit, and the third wire bond is connected in parallel with the matching circuit.

[0010] In the optical module provided by the present disclosure, the laser component respectively includes a substrate and a laser chip disposed on the surface of the substrate. The laser chip includes an electro-absorption modulation region, and a high-frequency electrode is formed on the surface of the electro-absorption modulation region. A reference ground, a high-frequency signal line, a matching circuit, a first connection portion, and a second connection portion are respectively formed on the surface of the substrate. Exemplarily, the matching circuit includes a matching resistor. One end of the first connection portion is electrically connected to the matching circuit, and the matching circuit is electrically connected to the reference ground, so one end of the first connection portion is connected to the reference ground through the matching circuit. A first wire bond is provided between the high-frequency electrode and the high-frequency signal line. Through the first wire bond, an electrical signal can be transmitted to the inside of the electro-absorption modulation region through the high-frequency signal line, and the electro-absorption modulation region modulates the optical signal according to the received electrical signal. In order to achieve impedance matching between the electro-absorption modulation region and the high-frequency signal line, a second wire bond is provided between the high-frequency electrode and one end of the first connection portion. Through the second wire bond, a certain proportion of the electrical signal transmitted to the electro-absorption modulation region is led out from the electro-absorption modulation region, and the led-out partial electrical signal is transmitted to the matching circuit and is connected in parallel with the electro-absorption modulation region through the matching circuit, thereby achieving impedance matching between the electro-absorption modulation region and the high-frequency signal line. In the present disclosure, the inductance effect of the wire bond, the parasitic capacitance in the electro-absorption modulation region, and the matching resistor in the matching circuit together form an RLC resonance peaking circuit. By utilizing the resonance effect of the RLC circuit, the laser component operates at a higher frequency, and the bandwidth of the laser chip is improved. In the present disclosure, in order to enhance the resonance effect and further improve the bandwidth of the laser chip, a third wire bond is provided between the first connection portion and the second connection portion, and the third wire bond is connected in parallel with the matching circuit. Then, the electrical signal led out from the laser chip through the second wire bond is divided into two paths. One path of the electrical signal is transmitted to the matching circuit, and the other path of the electrical signal is transmitted to the third wire bond. In the present disclosure, the third wire bond participates in the resonance peaking circuit. Since the third wire bond also has an inductance effect, when the third inductance is increased, the inductance amount participating in the resonance effect can be increased, the resonance effect can be enhanced, and thus the oscillation amplitude can be increased, so that the laser chip operates at a higher frequency and the bandwidth performance of the laser chip is further improved. In the present disclosure, since the third wire bond is connected in parallel with the matching circuit, the third wire bond is forced to participate in the matching circuit. In order not to affect the impedance of the matching circuit, the second connection portion is only electrically connected to the first connection portion. Then, the electrical signal output from the third wire bond exists in the open-circuit environment between the third wire bond and the substrate. Furthermore, the transmission line impedance of the electrical signal output from the third wire bond is much greater than the impedance of the original matching circuit. At this time, even if the third wire bond is connected in parallel with the matching circuit, the influence on the impedance of the matching circuit is very small, thereby ensuring the effect of the matching circuit. Description of the Drawings

[0011] To more clearly illustrate the technical solutions in the present disclosure, the following will briefly introduce the drawings used in some embodiments of the present disclosure. Obviously, the drawings in the following description are only the drawings of some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams and are not limitations on the actual sizes of the products, the actual processes of the methods, the actual timings of the signals, etc. involved in the embodiments of the present disclosure.

[0012] Figure 1 FIG. is a partial architecture diagram of an optical communication system provided according to some embodiments of the present disclosure;

[0013] Figure 2 FIG. is a partial structure diagram of a host computer provided according to some embodiments of the present disclosure;

[0014] Figure 3 FIG. is a structure diagram of an optical module provided according to some embodiments of the present disclosure;

[0015] Figure 4 FIG. is an exploded view of an optical module provided according to some embodiments of the present disclosure;

[0016] Figure 5 FIG. is a structure diagram of an optical transmitting component provided according to some embodiments of the present disclosure;

[0017] Figure 6 FIG. is an exploded view of an optical transmitting component provided according to some embodiments of the present disclosure;

[0018] Figure 7 FIG. is a structure diagram of a laser component provided according to some embodiments of the present disclosure;

[0019] Figure 8 FIG. is a structure diagram of a laser chip provided according to some embodiments of the present disclosure;

[0020] Figure 9 FIG. is a structure diagram of a substrate provided according to some embodiments of the present disclosure;

[0021] Figure 10 FIG. is a structure diagram of wire bonding of a laser component provided according to some embodiments of the present disclosure;

[0022] Figure 11 FIG. is an exploded view of wire bonding of a laser component provided according to some embodiments of the present disclosure;

[0023] Figure 12 FIG. is a schematic diagram of the change in the wire bonding bandwidth of a laser component provided according to some embodiments of the present disclosure;

[0024] Figure 13Structural diagram of another laser assembly provided according to some embodiments of the present disclosure;

[0025] Figure 14 Exploded view of another laser assembly provided according to some embodiments of the present disclosure;

[0026] Figure 15 Circuit schematic diagram of another laser assembly provided according to some embodiments of the present disclosure;

[0027] Figure 16 Schematic diagram of bandwidth variation of another laser assembly provided according to some embodiments of the present disclosure. Detailed implementation manners

[0028] Hereinafter, some embodiments of the present disclosure will be clearly and detailedly described in conjunction with the accompanying drawings. However, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments provided by the present disclosure fall within the scope of protection of the present disclosure.

[0029] Unless otherwise required by the context, throughout the specification and claims, the term "comprising" is interpreted in an open, inclusive sense, that is, "including, but not limited to"; the terms "first" and "second" cannot be understood as indicating or implying relative importance or an upper limit on quantity; the term "a plurality" means two or more; the term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or integrated, can be directly connected, or can be indirectly connected through an intermediate medium; the use of the term "suitable for" or "configured to" means open and inclusive language, which does not exclude devices suitable for or configured to perform additional tasks or steps; descriptions such as "parallel", "perpendicular", "same", "consistent", "flush", etc. do not limit to absolute mathematical theory relationships, but also include acceptable error ranges generated in practice, and also include differences formed due to manufacturing reasons based on the same design concept.

[0030] In optical communication technologies, in order to establish information transmission between information processing devices, it is necessary to load information onto light and utilize the propagation of light to achieve information transmission. Here, the light loaded with information is an optical signal. When an optical signal is transmitted in an information transmission device, the loss of optical power can be reduced, so that high-speed, long-distance, and low-cost information transmission can be achieved. The signals that information processing devices can recognize and process are electrical signals. Information processing devices generally include optical network units (ONUs), gateways, routers, switches, mobile phones, computers, servers, tablet computers, televisions, etc., and information transmission devices generally include optical fibers and optical waveguides, etc.

[0031] An optical module can implement the mutual conversion between optical signals and electrical signals between an information processing device and an information transmission device. For example, at least one of the optical signal input end or the optical signal output end of the optical module is connected to an optical fiber, and at least one of the electrical signal input end or the electrical signal output end of the optical module is connected to an optical network terminal; the first optical signal from the optical fiber is transmitted to the optical module, and the optical module converts the first optical signal into a first electrical signal and transmits the first electrical signal to the optical network terminal; the second electrical signal from the optical network terminal is transmitted to the optical module, and the optical module converts the second electrical signal into a second optical signal and transmits the second optical signal to the optical fiber. Since information can be transmitted between multiple information processing devices through electrical signals, at least one of the multiple information processing devices needs to be directly connected to the optical module, rather than all information processing devices being directly connected to the optical module. Here, the information processing device directly connected to the optical module is called the host computer of the optical module. In addition, the optical signal input end or the optical signal output end of the optical module can be called an optical port, and the electrical signal input end or the electrical signal output end of the optical module can be called an electrical port.

[0032] Figure 1 It is a partial structural diagram of an optical communication system provided according to some embodiments of the present disclosure. As Figure 1 shown, the optical communication system mainly includes a remote information processing device 1000, a local information processing device 2000, a host computer 100, an optical module 200, an optical fiber 101, and a network cable 103.

[0033] One end of the optical fiber 101 extends in the direction of the remote information processing device 1000, and the other end of the optical fiber 101 is connected to the optical module 200 through the optical port of the optical module 200. The optical signal can be totally reflected in the optical fiber 101, and the propagation of the optical signal in the total reflection direction can almost maintain the original optical power. The optical signal undergoes multiple total reflections in the optical fiber 101 to transmit the optical signal from the remote information processing device 1000 to the optical module 200, or to transmit the optical signal from the optical module 200 to the remote information processing device 1000, thereby realizing long-distance and low-power-loss information transmission.

[0034] The optical communication system can include one or more optical fibers 101, and the optical fiber 101 is detachably or fixedly connected to the optical module 200. The host computer 100 is configured to provide a data signal to the optical module 200, or receive a data signal from the optical module 200, or monitor or control the working state of the optical module 200.

[0035] The host computer 100 includes a housing substantially in the shape of a cuboid, and an optical module interface 102 provided on the housing. The optical module interface 102 is configured to access the optical module 200 to establish a unidirectional or bidirectional electrical signal connection between the host computer 100 and the optical module 200.

[0036] The host computer 100 further includes an external power interface, which can access an electrical signal network. For example, the external power interface includes a Universal Serial Bus (USB) interface or a network cable interface 104, and the network cable interface 104 is configured to access a network cable 103 so that the host computer 100 establishes a unidirectional or bidirectional electrical signal connection with the network cable 103. One end of the network cable 103 is connected to the local information processing device 2000, and the other end of the network cable 103 is connected to the host computer 100 to establish an electrical signal connection between the local information processing device 2000 and the host computer 100 through the network cable 103. For example, a third electrical signal sent by the local information processing device 2000 is transmitted into the host computer 100 through the network cable 103, and the host computer 100 generates a second electrical signal according to the third electrical signal. The second electrical signal from the host computer 100 is transmitted to the optical module 200. The optical module 200 converts the second electrical signal into a second optical signal and transmits the second optical signal to the optical fiber 101. The second optical signal is transmitted in the optical fiber 101 to the remote information processing device 1000. For example, a first optical signal from the remote information processing device 1000 propagates through the optical fiber 101. The first optical signal from the optical fiber 101 is transmitted to the optical module 200. The optical module 200 converts the first optical signal into a first electrical signal, and the optical module 200 transmits the first electrical signal to the host computer 100. The host computer 100 generates a fourth electrical signal according to the first electrical signal and transmits the fourth electrical signal into the local information processing device 2000. It should be noted that the optical module is a tool for realizing the mutual conversion between optical signals and electrical signals. In the above process of converting optical signals and electrical signals, the information does not change, but the encoding and decoding methods of the information may change.

[0037] In addition to including an optical network terminal, the host computer 100 further includes an Optical Line Terminal (OLT), an Optical Network Terminal (ONT), or a data center server, etc.

[0038] Figure 2 It is a partial structure diagram of a host computer provided according to some embodiments of the present disclosure. To clearly show the connection relationship between the optical module 200 and the host computer 100, Figure 2 only the structure of the host computer 100 related to the optical module 200 is shown. As Figure 2As shown, the host computer 100 further includes a PCB circuit board 105 disposed within the housing, a cage 106 disposed on the surface of the PCB circuit board 105, a heat sink 107 disposed on the cage 106, and an electrical connector disposed within the cage 106. The electrical connector is configured to access the electrical port of the optical module 200; the heat sink 107 has raised structures such as fins to increase the heat dissipation area.

[0039] The optical module 200 is inserted into the cage 106 of the host computer 100, and the cage 106 fixes the optical module 200. The heat generated by the optical module 200 is conducted to the cage 106 and then dissipated through the heat sink 107. After the optical module 200 is inserted into the cage 106, the electrical port of the optical module 200 is connected to the electrical connector within the cage 106, thereby establishing a two-way electrical signal connection between the optical module 200 and the host computer 100. In addition, the optical port of the optical module 200 is connected to the optical fiber 101, thereby establishing a two-way optical signal connection between the optical module 200 and the optical fiber 101.

[0040] Figure 3 FIG. is a structural diagram of an optical module provided according to some embodiments of the present disclosure. Figure 4 FIG. is an exploded view of an optical module provided according to some embodiments of the present disclosure. As Figure 3 and Figure 4 shown, the optical module 200 includes a housing (shell), a circuit board 300 disposed within the housing, an optical transmitting component 400, and an optical receiving component 500. However, the present disclosure is not limited thereto. In some embodiments, the optical module 200 includes one of the optical transmitting component 400 and the optical receiving component 500.

[0041] The housing includes an upper housing 201 and a lower housing 202. The upper housing 201 covers the lower housing 202 to form the above-mentioned housing having two openings 204 and 205; the outer contour of the housing generally presents a rectangular body.

[0042] In some embodiments, the lower housing 202 includes a bottom plate 2021 and two lower side plates 2022 located on both sides of the bottom plate 2021 and perpendicular to the bottom plate 2021; the upper housing 201 includes a cover plate 2011, and the cover plate 2011 covers the two lower side plates 2022 of the lower housing 202 to form the above-mentioned housing.

[0043] In some embodiments, the lower housing 202 includes a bottom plate 2021 and two lower side plates 2022 located on both sides of the bottom plate 2021 and perpendicular to the bottom plate 2021; the upper housing 201 includes a cover plate 2011 and two upper side plates located on both sides of the cover plate 2011 and perpendicular to the cover plate 2011. The two upper side plates are combined with the two lower side plates 2022 to achieve the upper housing 201 covering the lower housing 202.

[0044] The direction of the line connecting the two openings 204 and 205 may be consistent with the length direction of the optical module 200, or may not be consistent with the length direction of the optical module 200. For example, the opening 204 is located at the end of the optical module 200 ( Figure 3 the right end), and the opening 205 is also located at the end of the optical module 200 ( Figure 3 the left end). Or, the opening 204 is located at the end of the optical module 200, while the opening 205 is located at the side of the optical module 200. The opening 204 is an electrical port, and the gold finger 301 of the circuit board 300 extends out from the opening 204 and is inserted into the electrical connector of the host computer 100; the opening 205 is an optical port and is configured to access an external optical fiber 101 so that the optical fiber 101 connects the optical transmitting component 400 and the optical receiving component 500 in the optical module 200.

[0045] Adopting the assembly method of combining the upper housing 201 and the lower housing 202 facilitates the installation of the circuit board 300, the optical transmitting component 400, the optical receiving component 500, etc. into the above-mentioned housing, and the upper housing 201 and the lower housing 202 can package and protect the above-mentioned devices. In addition, when assembling the circuit board 300, the optical transmitting component 400 and the optical receiving component 500, etc., it is convenient for the deployment of the positioning components, heat dissipation components and electromagnetic shielding components of these devices, which is beneficial to the automated implementation of production.

[0046] In some embodiments, the upper housing 201 and the lower housing 202 are made of metal materials, which is beneficial to achieving electromagnetic shielding and heat dissipation.

[0047] In some embodiments, the optical module 200 further includes an unlocking component 600 located outside its housing. The unlocking component 600 is configured to achieve a fixed connection between the optical module 200 and the host computer, or to release the fixed connection between the optical module 200 and the host computer.

[0048] For example, the unlocking component 600 is located outside the two lower side plates 2022 of the lower housing 202 and includes a latching component that matches the cage 106 of the host computer 100. When the optical module 200 is inserted into the cage 106, the latching component of the unlocking component 600 fixes the optical module 200 in the cage 106; when the unlocking component 600 is pulled, the latching component of the unlocking component 600 moves accordingly, thereby changing the connection relationship between the latching component and the host computer to release the fixation of the optical module 200 and the host computer, so that the optical module 200 can be withdrawn from the cage 106.

[0049] The circuit board 300 includes circuit traces, electronic components, and chips, etc. The electronic components and chips are connected according to the circuit design through the circuit traces to achieve functions such as power supply, electrical signal transmission, and grounding. The electronic components can include, for example, capacitors, resistors, triodes, and metal-oxide-semiconductor field-effect transistors (MOSFETs). The chips can include, for example, microcontroller units (MCUs), laser driver chips, transimpedance amplifiers (TIAs), limiting amplifiers, clock and data recovery chips (CDRs), power management chips, and digital signal processing (DSP) chips.

[0050] The circuit board 300 is generally a rigid circuit board. Due to its relatively hard material, the rigid circuit board can also achieve a bearing function. For example, the rigid circuit board can stably bear the above-mentioned electronic components and chips; the rigid circuit board can also be inserted into the electrical connectors in the cage 106 of the host computer 100.

[0051] The circuit board 300 also includes a gold finger 301 formed on its end surface. The gold finger 301 is composed of a plurality of independent pins. The circuit board 300 is inserted into the cage 106, and the gold finger 301 is electrically connected to the electrical connectors in the cage 106. The gold finger 301 can be provided only on the surface of one side of the circuit board 300 (for example Figure 4 the upper surface shown), or can be provided on the upper and lower surfaces of the circuit board 300 to provide a larger number of pins, so as to adapt to occasions with a large demand for the number of pins. The gold finger 301 is configured to establish an electrical connection with the host computer to achieve power supply, grounding, inter-integrated circuit (I2C) signal transmission, data signal transmission, etc. Of course, flexible circuit boards are also used in some optical modules. The flexible circuit board is generally used in cooperation with the rigid circuit board as a supplement to the rigid circuit board.

[0052] At least one of the optical transmitting component 400 or the optical receiving component 500 is located on the side of the circuit board 300 away from the gold finger 301.

[0053] In some embodiments, the optical transmitting component 400 and the optical receiving component 500 are physically separated from the circuit board 300 respectively, and then electrically connected to the circuit board 300 through corresponding flexible circuit boards or electrical connectors respectively.

[0054] In some embodiments, at least one of the optical transmitting component or the optical receiving component may be directly disposed on the circuit board 300. For example, at least one of the optical transmitting component or the optical receiving component may be disposed on the surface of the circuit board 300 or on the side of the circuit board 300.

[0055] As Figure 4 shown, in the optical module provided in this embodiment, the optical transmitting component 400 and the optical receiving component 500 are both disposed on the round-square tube body. The optical transmitting component 400 is used to generate and output signal light, and the optical receiving component 500 is used to receive signal light from outside the optical module. An optical fiber adapter is disposed on the round-square tube body, and the optical fiber adapter is used to realize the connection between the optical module and the external optical fiber. And a lens assembly is usually disposed in the round-square tube body, and the lens assembly is used to change the propagation direction of the signal light output by the optical transmitting component 400 or the signal light input by the external optical fiber. The optical transmitting component 400 and the optical receiving component 500 are physically separated from the circuit board 300. Therefore, it is difficult for the optical transmitting component 400 and the optical receiving component 500 to be directly connected to the circuit board 300. Therefore, in the embodiments of the present application, the optical transmitting component 400 and the optical receiving component 500 are respectively electrically connected through flexible circuit boards. However, in the embodiments of the present application, the assembly structures of the optical transmitting component 400 and the optical receiving component 500 are not limited to Figure 3 and Figure 4 the structures shown, and may also be other assembly combination structures. For example, the optical transmitting component 400 and the optical receiving component 500 are disposed on different tube bodies. This embodiment only takes Figure 3 and Figure 4 the structures shown as an example.

[0056] Figure 5 FIG. is a structural diagram of an optical transmitting component provided according to some embodiments of the present disclosure. As Figure 5 shown, the optical transmitting component 400 provided in this embodiment includes a base 490, a cap 480, and other devices disposed in the cap 480 and the base 490. The cap 480 covers one end of the base 490. The base 490 includes a plurality of pins, and the pins are used to realize the electrical connection between the flexible circuit board and other electrical devices in the optical transmitting component 400, so as to realize the electrical connection between the optical transmitting component 400 and the circuit board 300. This embodiment only takes Figure 5 the structure shown as an example.

[0057] Figure 6 FIG. is an exploded view of an optical transmitting component provided according to some embodiments of the present disclosure. As Figure 6 shown, the optical transmitting component 400 includes a laser assembly 410. The laser assembly 410 generates signal light, and the generated signal light passes through the cap 480.

[0058] Figure 7 FIG. is a structural diagram of a laser assembly provided according to some embodiments of the present disclosure; Figure 8A structural diagram of a laser chip provided according to some embodiments of the present disclosure; Figure 9 A structural diagram of a substrate provided according to some embodiments of the present disclosure. As Figures 7 - 9 shown, in some embodiments, the above-mentioned laser assembly 410 may be Figure 7 the laser assembly 410a in. The laser assembly 410a includes a laser chip 420 and a substrate 430. A circuit is laid on the upper surface of the substrate 430, and the laser chip 420 is wire-bonded to the corresponding circuit on the substrate 430. Exemplarily, the laser chip 420 may be an EML semiconductor laser chip, and the EML semiconductor laser chip can be obtained by monolithic integration of a DFB laser and an EAM modulator. By using external modulation technology, the EML semiconductor laser chip avoids the interaction between photons and electrons in the laser during high-speed modulation, reduces the large chirp caused by direct modulation, and thus can achieve higher-speed transmission. In the embodiments of the present disclosure, the structure of the laser assembly 410 is not limited to Figure 7 the structure shown, and may also be a laser assembly in other structural forms; the substrate 430 may be a ceramic substrate, but is not limited to a ceramic substrate.

[0059] In some embodiments, a circuit is laid on the upper surface of the substrate 430, and the laser chip 420 is electrically connected to the corresponding circuit of the substrate 430 through the first wire bond 450 and the second wire bond 440 respectively.

[0060] In some embodiments of the present disclosure, the laser chip 420 includes a light-emitting region 421 and an electro-absorption modulation region 422. The light-emitting region 421 may be the above-mentioned DFB laser, and the electro-absorption modulation region 422 may be the above-mentioned EAM modulator. The light-emitting region 421 is used to emit light and transmit it to the electro-absorption modulation region 422; the electro-absorption modulation region 422 modulates the received electrical signal into the light emitted by the light-emitting region 421, thereby modulating it into an optical signal. Among them, the electro-absorption modulation region 422 receives an electrical signal through the first wire bond 450.

[0061] In some embodiments, the electro-absorption modulation region 422 includes a high-frequency electrode 4221 and a signal transmission line 4222. Exemplarily, the high-frequency electrode 4221 and the signal transmission line 4222 are respectively formed on the top surface of the electro-absorption modulation region 422. The high-frequency electrode 4221 is the positive electrode pad of the laser chip 420, and the negative electrode pad of the laser chip 420 is disposed on the bottom surface of the laser chip 420.

[0062] In some embodiments of the present disclosure, a reference ground 431a, a high-frequency signal line 432, a first connection portion 433, and a matching circuit 434 are respectively formed on the surface of the substrate 430. Exemplarily, the form of the first connection portion 433 may be a wire bonding pad. The high-frequency signal line 432 has a specific signal impedance, and the electro-absorption modulation region 422 has a specific impedance, and the impedances of the two do not match, resulting in loss of electrical signals transmitted between the high-frequency signal line 432 and the electro-absorption modulation region 422 and reducing the signal integrity. Exemplarily, the impedance of the electro-absorption modulation region 422 is greater than the impedance of the high-frequency signal line 432.

[0063] In the present disclosure, since the impedance of the electro-absorption modulation region 422 is greater than the impedance of the high-frequency signal line 432, in order to achieve impedance matching between the high-frequency signal line 432 and the electro-absorption modulation region 422, a matching circuit 434 is connected in parallel to the electro-absorption modulation region 422 to reduce the impedance of the electro-absorption modulation region 422, thereby achieving impedance matching. Exemplarily, the matching circuit 434 includes a matching resistor and the like. Again exemplarily, the matching resistor has a preset impedance, such as 50 ohms or the like.

[0064] In some embodiments, in order to set the matching circuit 434, a second wire 440 is provided between the output end of the high-frequency electrode 4221 and one end of the first connection portion 433. The second wire 440 is electrically connected to one end of the matching circuit 434, and the other end of the matching circuit 434 is electrically connected to the reference ground. A certain proportion of the electrical signals transmitted to the electro-absorption modulation region 422 is led out from the electro-absorption modulation region 422 through the second wire 440. The led-out partial electrical signals are transmitted into the matching circuit 434, and the matching circuit 434 is connected in parallel with the electro-absorption modulation region 422, thereby reducing the impedance of the electro-absorption modulation region 422 and achieving impedance matching between the electro-absorption modulation region 422 and the high-frequency signal line 432.

[0065] Meanwhile, in some embodiments, the second wire 440 is equivalent to an inductor. Based on the inductance effect of the second wire 440, the second wire 440, the electro-absorption modulation region 422, and the matching circuit 434 form an RLC resonant peaking circuit. Exemplarily, the equivalent inductance of the second wire 440, the parasitic capacitance in the electro-absorption modulation region 422, and the matching resistor in the matching circuit 434 jointly form an RLC resonant peaking circuit. This circuit makes the laser chip generate a larger oscillation amplitude at a specific frequency point through the resonance effect, so that the laser chip reaches a higher frequency and improves the bandwidth performance of the laser chip.

[0066] In some embodiments, the reference ground 431a includes a first region 4311a and a second region 4312a. The laser chip 420 is disposed on the surface of the first region 4311a, and the matching circuit 434 is electrically connected to the second region 4312a, that is, one end of the matching circuit 434 is grounded.

[0067] In some embodiments, a first bonding wire 450 is provided between the high-frequency signal line 432 and the high-frequency electrode 4221. Exemplarily, the first bonding wire 450 is provided between the input end of the high-frequency signal line 432 and the high-frequency electrode 4221, and an electrical signal is transmitted from the high-frequency signal line 432 to the high-frequency electrode 4221 through the first bonding wire 450. When the electrical signal reaches the high-frequency electrode 4221, the electrical signal is divided into two paths. One path of the electrical signal is transmitted along the signal transmission line 4222 to the inside of the electro-absorption modulation region 422, and the other path is output from the laser chip 420 and transmitted along the second bonding wire 440 to the matching circuit 434. Exemplarily, a second bonding wire 440 is provided between the high-frequency electrode 4221 and the first connection portion 433. From the perspective of transmission, the first bonding wire 450 is an input-end bonding wire, and the second bonding wire 440 is an output-end bonding wire.

[0068] A certain proportion of the electrical signal transmitted to the electro-absorption modulation region is led out from the electro-absorption modulation region through the second bonding wire 440, and the led-out electrical signal is transmitted into the matching circuit 434.

[0069] The second bonding wire 440 is electrically connected to the matching circuit 434. Therefore, the second bonding wire 440 is electrically connected to the reference ground 431a through the matching circuit 434, that is, the second bonding wire 440 is grounded through the matching circuit 434. Based on this, when the electrical signal reaches the high-frequency electrode 4221, the electrical signal is divided into two paths. One path of the electrical signal is transmitted along the signal transmission line 4222 to the inside of the electro-absorption modulation region 422, and the other path is transmitted along the second bonding wire 440 to the matching circuit 434.

[0070] In some embodiments, since the surface of the laser chip 420 is higher than the surface of the substrate 430, the first bonding wire 450 and the second bonding wire 440 need to present a certain arc to be bonded to the substrate 430, resulting in that the length of the gold wire cannot be controlled within a short range, thereby causing a large parasitic inductance effect, increasing the bonding wire impedance and the insertion loss, reducing the high-frequency performance of the laser component 410a, and further reducing the bandwidth of the laser component. The input-end bonding wire, that is, the first bonding wire 450, is the input wire of the electrical signal. In order to reduce the insertion loss of the electrical signal on the input path, the impedance performance of the first bonding wire 450 affects the high-frequency performance of the laser component 410a more than that of the second bonding wire 440. Especially as the rate of the optical module increases, the influence of the impedance of the first bonding wire 450 on the high-frequency performance becomes more obvious.

[0071] In some embodiments, in order to reduce the parasitic inductance effect of the first bonding wire 450, the length of the first bonding wire 450 can be selected to be shortened; the second bonding wire 440 can be equivalent to an inductor, and it forms an RLC resonance peaking circuit with the electro-absorption modulation region 422 to generate a resonance effect. In order to enhance this resonance effect and make the laser component 410a reach a higher frequency, the length of the second bonding wire 440 can be selected to be increased.

[0072] In some embodiments, even if the length of the first wire bond 450 is shortened, due to the parasitic inductance effect, the impedance of the first wire bond 450 is still much greater than the preset impedance. Exemplarily, the impedance of the first wire bond 450 is still much greater than 50 Ω.

[0073] In some embodiments, the impedance of the first wire bond 450 is greater than the impedance of the electro-absorption modulation region 422, and the impedance of the electro-absorption modulation region 422 is greater than the impedance of the high-frequency signal line 432, thus resulting in loss of electrical signal transmission. Among them, it can be seen that the impedance of the first wire bond 450 and the impedance of the electro-absorption modulation region 422 are on the high side, thus causing impedance mismatch.

[0074] In the present disclosure, the matching circuit 434 is connected in parallel with the electro-absorption modulation region 422, thereby reducing the impedance of the electro-absorption modulation region 422 and achieving impedance matching between the electro-absorption modulation region 422 and the high-frequency signal line 432.

[0075] In the present disclosure, by wrapping a dielectric around the outer wall of the first wire bond 450, the dielectric constant of the dielectric is greater than the dielectric constant of air, thereby reducing the impedance of the first wire bond 450 and achieving impedance matching between the first wire bond 450 and the high-frequency signal line 432. In some embodiments, a dielectric is wrapped around the outer wall of the first wire bond 450, and the dielectric is a special dielectric. Exemplarily, the dielectric is a dielectric with a dielectric constant greater than the dielectric constant of air. The dielectric constant of air is 1, then the dielectric constant of the dielectric is greater than 1. Based on the impedance principle, impedance is negatively correlated with the dielectric constant. When the first wire bond 450 is surrounded by a dielectric with a dielectric constant greater than the dielectric constant of air, the impedance of the first wire bond 450 is reduced to better match the impedance design, improve the high-frequency performance of the laser assembly 410a, and further improve the 3dB bandwidth of the laser assembly 410a.

[0076] Figure 10 FIG. [ID] is a structural diagram of a wire bond of a laser assembly according to some embodiments of the present disclosure; Figure 11 FIG. [ID] is an exploded view of a wire bond of a laser assembly according to some embodiments of the present disclosure. As Figure 10 and Figure 11 shown, in some embodiments, a dielectric 460 is wrapped around the outer wall of the first wire bond 450. The dielectric constant of the dielectric 460 is greater than the dielectric constant of air. Based on the impedance principle, impedance is negatively correlated with the dielectric constant. When the first wire bond 450 is surrounded by a dielectric with a dielectric constant greater than the dielectric constant of air, the impedance of the first wire bond 450 is reduced to better match the impedance design, thereby improving the bandwidth of the laser chip.

[0077] In some embodiments, the dielectric constant of the dielectric 460 has a preset range. When the dielectric constant is too large, the impedance of the first wire bond 450 will drop too much and cannot better match the impedance design. Exemplarily, the dielectric constant of the dielectric 460 is between 1 and 8.

[0078] In some embodiments, the medium 460 can wrap around the outer wall of the first wire bond 450, but does not extend toward the surface of the substrate 430. In some embodiments, after the medium 460 wraps around the outside of the first wire bond 450, it can extend upward and downward simultaneously to increase the coverage area of the medium 460. In some embodiments, the medium 460 can wrap around the entire length of the first wire bond 450 or can wrap around a partial length of the first wire bond 450.

[0079] In some embodiments, the medium 460 can be a specific glue. Exemplarily, the dielectric constant of the specific glue satisfies the range of 1-8 above. In some embodiments, the medium 460 such as the specific glue is used to wrap the first wire bond 450 in the form of coating and then baked and cured. In some embodiments, the medium 460 such as the specific glue is used to wrap the first wire bond 450 in the form of spraying and then baked and cured as well.

[0080] In the present disclosure, the impedance of the electro-absorption modulation region 422 can be reduced by the matching circuit 434, and the impedance of the first wire bond 450 can be reduced by wrapping a medium with a dielectric constant greater than the dielectric constant of air around the outer wall of the first wire bond 450, so as to achieve impedance matching with the high-frequency signal line 432, ensure the integrity of the electrical signal transmission, and thus improve the bandwidth of the laser chip.

[0081] Figure 12 It is a schematic diagram of the change in the wire bond bandwidth of a laser assembly according to some embodiments of the present disclosure. Figure 12 It is the bandwidth curve of the laser assembly 410a, where the bandwidth curve labeled 1 represents that the first wire bond 450 is not wrapped by the medium 460, and the bandwidth curve labeled 2 represents that the first wire bond 450 is wrapped by the medium 460. As Figure 12 shown, at the 3dB bandwidth position, the frequency corresponding to the bandwidth curve labeled 2 is greater than the frequency corresponding to the bandwidth curve labeled 1. From this, it can be shown that when the first wire bond 450 is wrapped by the medium 460, the corresponding frequency is higher. At this time, the high-frequency performance of the laser assembly 410a is increased, thereby increasing the bandwidth of the laser assembly 410a and breaking through the limitation of the bandwidth of the laser chip itself.

[0082] Figure 13 It is a structural diagram of another laser assembly according to some embodiments of the present disclosure; Figure 14 It is an exploded view of another laser assembly according to some embodiments of the present disclosure. As Figure 13 and Figure 14 , in some embodiments provided by the present disclosure, the above-mentioned laser assembly 410 can be Figure 13The laser component 410b in []. Similar to the laser component 410a, the laser component 410b includes a laser chip 420 and a substrate 430. In some embodiments, the laser chip structure in the laser component 410b is the same as that in the laser component 410a. The laser chip in the laser component 410b also includes a high-frequency electrode 4221 and a signal transmission line 4222. In some embodiments, on the surface of the substrate in the laser component 410b, a reference ground 431b, a high-frequency signal line 432, a first connection portion 433, a matching circuit 434, and a second connection portion 435 are respectively formed. Exemplarily, the forms of the first connection portion 433 and the second connection portion 435 can be wire bonding pads respectively. The high-frequency signal line 432 in the laser component 410b has the same structure and function as the high-frequency signal line 432 in the laser component 410a. The matching circuit 434 in the laser component 410b has the same structure and function as the matching circuit 434 in the laser component 410a. Exemplarily, the matching circuit 434 includes a matching resistor, etc., and the matching resistor is described as resistor R1.

[0083] In some embodiments, the reference ground 431b includes a first region 4311b, and the laser chip in the laser component 410b is disposed on the surface of the first region 4311b. The matching circuit 434 in the laser component 410b is electrically connected to the first region 4311b.

[0084] In some embodiments, a first wire bond 450 is provided between the high-frequency signal line 432 and the high-frequency electrode 4221 in the laser component 410b, and a second wire bond 440 is provided between the high-frequency electrode 4221 and the first connection portion 433. The first wire bond 450 is the input wire bond of the electro-absorption modulation region of the laser chip, and the second wire bond 440 is the output wire bond of the electro-absorption modulation region of the laser chip. The second wire bond 440 is connected to the reference ground 431 through the matching circuit 434, so the second wire bond 440 is grounded through the matching circuit 434.

[0085] The electrical signal is transmitted from the high-frequency signal line 432 to the high-frequency electrode 4221 through the first wire bond 450. When the electrical signal reaches the high-frequency electrode 4221, the electrical signal is divided into two paths, and the proportions of the two paths of electrical signals are different. One path of the electrical signal is transmitted along the signal transmission line 4222 to the inside of the electro-absorption modulation region 422, and the other path is led out from the electro-absorption modulation region 422 along the second wire bond 440. Among them, a certain proportion of the electrical signal led out from the electro-absorption modulation region 422 is transmitted to the matching circuit 434.

[0086] In some embodiments, the second bonding wire 440 is equivalent to an inductor. Based on the inductance effect of the second bonding wire 440, the second bonding wire 440, the electro-absorption modulation region 422, and the matching circuit 434 form an RLC resonant peaking circuit. Exemplarily, the equivalent inductance of the second bonding wire 440, the parasitic capacitance in the electro-absorption modulation region 422, and the matching resistor in the matching circuit 434 together form an RLC resonant peaking circuit. This circuit enables the laser chip to generate a larger oscillation amplitude at a specific frequency point through the resonance effect, thereby enabling the laser chip to reach a higher frequency and improving the bandwidth performance of the laser chip.

[0087] In some embodiments of the present disclosure, in order to further improve the high-frequency performance of the laser chip and thus further increase the bandwidth of the laser module 410b, a third bonding wire 470 is provided between the first connection portion 433 and the second connection portion 435. Exemplarily, a second bonding wire 440 is provided between the high-frequency electrode 4221 and one end of the first connection portion 433, and a third bonding wire 470 is provided between the other end of the first connection portion 433 and the second connection portion 435. The second bonding wire 440 and the third bonding wire 470 share the first connection portion 433. Exemplarily, if the first connection portion 433 and the second connection portion 435 are respectively bonding pads, then the second bonding wire 440 and the third bonding wire 470 share one bonding pad.

[0088] In some embodiments, one end of the first connection portion 433 that is electrically connected to the second bonding wire 440 is electrically connected to the reference ground through the matching circuit 434. The second connection portion 435 is not electrically connected to the reference ground. The function of the second connection portion 435 is to lead out the third bonding wire 470 between it and the first connection portion 433.

[0089] In the present disclosure, the third bonding wire 470 is in parallel with the matching circuit 434. Then, the electrical signal led out from the electro-absorption modulation region 422 through the second bonding wire 440 is divided into two paths: one path of the electrical signal is transmitted to the matching circuit 434, and the other path of the electrical signal is transmitted to the third bonding wire 470.

[0090] In the present disclosure, by connecting the third bonding wire 470 in parallel at the matching circuit 434, the third bonding wire 470 can be equivalent to an inductor. Therefore, the third bonding wire 470 has an inductance effect. The inductance of the bonding wire, the parasitic capacitance in the electro-absorption modulation region, and the matching resistor in the matching circuit together form an RLC resonant peaking circuit. This circuit can improve the bandwidth performance of the laser chip through the RLC resonance effect. In the present disclosure, the third bonding wire 470 participates in the RLC resonant peaking circuit. Since the third bonding wire also has an inductance effect, the inductance amount participating in the resonance effect can be increased, the resonance effect can be enhanced, thereby increasing the oscillation amplitude, enabling the laser chip to operate at a higher frequency, and further improving the bandwidth performance of the laser chip.

[0091] The present disclosure increases the inductance involved in the resonant peaking circuit by adding a third bonding wire 470, thereby enhancing the resonant effect. Therefore, the third bonding wire 470 can further enhance the resonant effect on the basis of the resonant effect generated by the second bonding wire 440, thereby increasing the oscillation amplitude, raising the frequency point at which resonance occurs, enabling the laser module 410b to reach a higher frequency, enhancing the high-frequency performance of the laser module 410b, and further enhancing the bandwidth of the laser module 410b to break through the limitation of the bandwidth of the laser chip itself.

[0092] In some embodiments, the inductance value of the third bonding wire 470 can be modulated by adjusting the length of the third bonding wire 470 to achieve an optimal broadband improvement effect.

[0093] In some embodiments, the second bonding wire 440 and the third bonding wire 470 are applied at different frequencies. Exemplarily, the laser module 410b can operate at a relatively high frequency through the second bonding wire 440, and the laser module 410b can operate at an even higher frequency through the third bonding wire 470.

[0094] In the present disclosure, since the third bonding wire 470 is connected in parallel with the matching circuit 434, the third bonding wire 470 is forced to participate in the matching circuit 434. To avoid affecting the impedance of the matching circuit 434, the second connection portion 435 is only electrically connected to the first connection portion 433. The second connection portion 435 is provided on the surface of the substrate, and the second connection portion 435 is only electrically connected to the first connection portion 433. Due to the good insulation performance of the substrate, the circuit between the third bonding wire 470 and the substrate is approximately an open-circuit environment, and since the second connection portion 435 is only electrically connected to the first connection portion 433, the electrical signal transmitted by the third bonding wire 470 can only exist in the open-circuit environment between the third bonding wire 470 and the substrate. Furthermore, the impedance on the transmission line of the electrical signal output by the third bonding wire 470 is much greater than the impedance of the matching circuit 434. It can be considered that the impedance on the transmission line of the electrical signal output by the third bonding wire 470 is an infinite impedance. At this time, even if the third bonding wire 470 is connected in parallel with the matching circuit 434, the influence on the impedance of the matching circuit 434 will be very small, thus ensuring the effect of the matching circuit.

[0095] In order not to affect the impedance of the matching circuit 434, the end of the third bonding wire 470, i.e., the second connection portion 435, is only electrically connected to the first connection portion 433 and is not electrically connected to any device other than the first connection portion 433. At this time, the path for the third bonding wire 470 to transmit an electrical signal is as follows: it is transmitted along the inside of the substrate to the back of the substrate through the second connection portion 435. However, most substrates are ceramic substrates with good insulation performance. Therefore, the circuit between the third bonding wire 470 and the substrate is approximately an open-circuit environment, and the transmission line of the electrical signal output by the third bonding wire 470 has an infinite impedance. Even if the third bonding wire 470 is connected in parallel with the matching circuit 434, the influence on the impedance of the matching circuit 434 will be very small, thus ensuring the effect of the matching circuit. Since the electrical signal is a radio frequency signal, it can exist in an open circuit.

[0096] Exemplarily, the second connection portion 435 is not electrically connected to the reference ground. Assuming that the second connection portion 435 is electrically connected to the reference ground, the electrical signal transmitted by the third bonding wire 470 will be transmitted to the reference ground, and the line impedance of the electrical signal transmitted by the third bonding wire 470 will be small. When the third bonding wire 470 is connected in parallel with the matching circuit 434, it will reduce the impedance of the matching circuit 434, thereby affecting the impedance matching effect of the matching circuit 434. When the second connection portion 435 is electrically connected to a device other than the first connection portion 433, it will also reduce the impedance of the matching circuit 434 and affect the impedance matching effect of the matching circuit 434.

[0097] Figure 15 FIG. is a circuit schematic diagram of another laser assembly according to some embodiments of the present disclosure. In some embodiments, the parasitic inductance of the first bonding wire 450 is equivalent to the inductor L1 in the circuit diagram, the parasitic inductance of the second bonding wire 440 is equivalent to the inductor L2, and the parasitic inductance of the third bonding wire 470 is equivalent to the inductor L3.

[0098] The resistor R1 in the circuit diagram is the matching resistor in the matching circuit 434, the resistors R2 and R3 in the circuit diagram are respectively the internal resistors of the electro-absorption modulation region of the laser chip, and the resistor R4 in the circuit diagram is the infinite impedance on the transmission line of the electrical signal output by the third bonding wire 470.

[0099] Since there is a parasitic capacitance in the electro-absorption modulation region itself, in the circuit diagram, the capacitor C1 is the parasitic capacitance of the signal transmission line 4222, and the capacitor C2 is the parasitic capacitance of the high-frequency electrode 4221.

[0100] The electrical signal is transmitted to the electro-absorption modulation region through the first bonding wire 450. At this time, the electrical signal is divided into two paths. Then, one path of the electrical signal is transmitted to the inside of the electro-absorption modulation region along the path where the resistor R2 is located, and the other path of the electrical signal is output from the electro-absorption modulation region along the second bonding wire 470.

[0101] The electrical signal output along the second bond wire 470 is divided into two paths. One path is transmitted along the matching circuit where the resistor R1 is located, and the other path is transmitted along the third bond wire 470.

[0102] The parasitic inductance L2 of the second bond wire, the internal parasitic capacitances C1 / C2 in the electro-absorption modulation region, and the resistor R1 in the matching circuit together form an RLC resonance peaking circuit, which can improve the bandwidth performance of the laser chip through the RLC resonance effect.

[0103] By setting the third bond wire, the parasitic inductance of the bond wire is increased, that is, the inductance involved in the resonance effect is increased, thereby enhancing the RLC resonance effect. At this time, the oscillation amplitude increases, so as to increase the frequency point at which resonance occurs, enabling the laser module to reach a higher frequency, further improving the high-frequency performance of the laser module, and further enhancing the bandwidth of the laser module to break through the limitation of the bandwidth of the laser chip itself.

[0104] Figure 16 FIG. 3 is a schematic diagram of the bandwidth change of another laser module according to some embodiments of the present disclosure. The bandwidth curve labeled 3 represents the bandwidth curve corresponding to the parallel connection of the third bond wire at the matching circuit, and the bandwidth curve labeled 4 represents the bandwidth curve corresponding to the non-parallel connection of the third bond wire at the matching circuit. As Figure 16 shown, in some embodiments, by setting the third bond wire, the high point of the frequency moves backward, thereby increasing the bandwidth. Exemplarily, the laser chip can operate in the frequency band range of 84 - 90 GHz.

[0105] The setting of the second bond wire 440 can enable the laser chip to operate in the frequency band range of 0 - 50 GHz; by adding the third bond wire, the laser chip can operate in the frequency band range of 84 - 90 GHz. This also shows that the present disclosure can enable the laser chip to operate at a higher frequency by adding the third bond wire, the high-frequency performance of the laser chip is improved, and thus the bandwidth of the laser chip is also improved.

[0106] It can be understood that in the present disclosure, the outer wall of the first wire bonding in the laser assembly 410a being wrapped with a specific medium is equally applicable to the laser assembly 410b. In some embodiments of the present disclosure, the first wire bonding 450 is the input wire bonding of the laser assembly 410b, and a medium is wrapped around the outer wall of the first wire bonding 450, and this medium is a special medium. Exemplarily, this medium is a medium with a dielectric constant greater than the dielectric constant of air. The dielectric constant of air is 1, so the dielectric constant of this medium is greater than 1. Based on the impedance principle, impedance is negatively correlated with the dielectric constant. When the first wire bonding 450 is surrounded by a medium with a dielectric constant greater than that of air, the impedance of the first wire bonding 450 decreases to better match the impedance design, improve the high-frequency performance of the laser assembly 410b, and further increase the bandwidth of the laser assembly 410a, breaking through the limitation of the bandwidth of the laser chip itself. In some embodiments, the dielectric constant of the medium 460 has a preset range. When the dielectric constant is too large, the impedance of the first wire bonding 450 will drop too much and cannot better match the 50Ω impedance design. Exemplarily, the dielectric constant of the medium 460 is between 1 and 8.

[0107] It can be understood that in the present disclosure, the added third wire bonding in the laser assembly 410b is equally applicable to the laser assembly 410a. In some embodiments of the present disclosure, a second connection portion is provided on the surface of the substrate in the laser assembly 410a, and the second connection portion is only electrically connected to the first connection portion; a third wire bonding is provided between the other end of the first connection portion and the second connection portion, and the third wire bonding is connected in parallel with the matching circuit. The presence of the third wire bonding 470 will increase the inductance involved in the resonance effect, thereby enhancing the resonance effect. At this time, the oscillation amplitude increases, thereby increasing the frequency point at which resonance occurs, making the laser assembly reach a higher frequency, to further improve the high-frequency performance of the laser assembly, and further increase the bandwidth of the laser assembly, breaking through the limitation of the bandwidth of the laser chip itself.

[0108] In the present disclosure, by wire bonding at the input end of the electro-absorption modulation region, i.e., the first wire bonding 450 wraps the dielectric 460, the impedance of the first wire bonding 450 is reduced, impedance matching is achieved, the high-frequency performance is improved, and thus the bandwidth of the laser component is increased. In the present disclosure, the third wire bonding 470 can also be connected in parallel with the matching circuit 434. The presence of the third wire bonding 470 will increase the inductance involved in the resonance effect, thereby enhancing the resonance effect. At this time, the oscillation amplitude increases, the frequency point at which resonance occurs is increased, the laser component reaches a higher frequency, the high-frequency performance of the laser component is further improved, and thus the bandwidth of the laser component is further increased, breaking through the limitation of the bandwidth of the laser chip itself. At the same time, in the present disclosure, when the third wire bonding is added, since the third wire bonding is connected in parallel with the matching circuit, the third wire bonding is forced to participate in the matching circuit. In order not to affect the impedance of the matching circuit, the second connecting portion is only electrically connected to the first connecting portion, and the electrical signal transmitted in the third wire bonding exists in the open-circuit environment between the third wire bonding and the substrate. Furthermore, the transmission line impedance of the electrical signal output by the third wire bonding is much greater than the impedance of the original matching circuit. At this time, even if the third wire bonding is connected in parallel with the matching circuit, the influence on the impedance of the matching circuit is very small, thus ensuring the effect of the matching circuit.

[0109] The above is only the specific implementation manner of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present disclosure, thinking of changes or substitutions, should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. An optical module, characterized in that, Comprising: A circuit board; An optical emission component, electrically connected to the circuit board, for generating and outputting an optical signal, the optical emission component including a laser component; wherein, the laser component respectively includes: A substrate, on the surface of which a reference ground, a high-frequency signal line, a matching circuit, a first connection portion, and a second connection portion are respectively formed, wherein the first connection portion is electrically connected to the matching circuit, and the matching circuit is electrically connected to the reference ground; the second connection portion is only electrically connected to the first connection portion; A laser chip, disposed on the surface of the reference ground, including an electro-absorption modulation region, on the surface of which a high-frequency electrode is formed; a first wire bond is provided between the high-frequency electrode and the high-frequency signal line to receive the electrical signal output by the high-frequency signal line; a second wire bond is provided between the high-frequency electrode and one end of the first connection portion, and a third wire bond is provided between the other end of the first connection portion and the second connection portion; wherein, the second wire bond is connected to the reference ground through the matching circuit, and the third wire bond is connected in parallel with the matching circuit.

2. The optical module according to claim 1, wherein The transmission line impedance of the electrical signal output by the third wire bond is greater than the impedance of the matching circuit, so as to reduce the influence on the impedance of the matching circuit.

3. The optical module according to claim 1, characterized in that, The high-frequency signal line has a specific impedance; The impedance of the electro-absorption modulation region is greater than the impedance of the high-frequency signal line; the matching circuit is connected in parallel with the electro-absorption modulation region to reduce the impedance of the electro-absorption modulation region; The impedance of the first wire bond is greater than the impedance of the high-frequency signal line; the outer wall of the first wire bond is wrapped with a dielectric, and the dielectric constant of the dielectric is greater than the dielectric constant of air, so as to reduce the impedance of the first wire bond.

4. The optical module according to claim 1, wherein A signal transmission line is further provided on the surface of the electro-absorption modulation region; The electrical signal received by the first wire bond is divided into two paths, one path of the electrical signal reaches the inside of the electro-absorption modulation region along the signal transmission line, and the other path of the electrical signal is output from the laser chip along the second wire bond.

5. The optical module according to claim 1, wherein The electrical signal transmitted out by the second wire bond is divided into two paths, one path of the electrical signal is transmitted into the matching circuit, and the other path of the electrical signal is transmitted into the third wire bond.

6. An optical module, characterized in that, Comprising: A circuit board; An optical emission component, electrically connected to the circuit board, for generating and outputting an optical signal, the optical emission component including a laser component; wherein, the laser component respectively includes: A substrate, on the surface of which a reference ground, a high-frequency signal line, a matching circuit, a first connection portion, and a second connection portion are respectively formed, wherein the first connection portion is electrically connected to the matching circuit, and the matching circuit is electrically connected to the reference ground; the second connection portion is only electrically connected to the first connection portion; A laser chip, disposed on the surface of the reference ground, including an electro-absorption modulation region, on the surface of which a high-frequency electrode is formed; a first wire bond is provided between the high-frequency electrode and the high-frequency signal line to receive the electrical signal output by the high-frequency signal line; a second wire bond is provided between the high-frequency electrode and one end of the first connection portion, and a third wire bond is provided between the other end of the first connection portion and the second connection portion; wherein, the second wire bond is connected to the reference ground through the matching circuit, and the third wire bond is connected in parallel with the matching circuit; Among them, the impedance of the first wire bonding is greater than that of the high-frequency signal line. The outer wall of the first wire bonding is wrapped with a medium, and the dielectric constant of the medium is greater than that of air to reduce the impedance of the first wire bonding.

7. The optical module according to claim 6, wherein One end of the matching circuit is electrically connected to the second wire bonding, and the other end of the matching circuit is electrically connected to the reference ground.

8. The optical module according to claim 7, wherein The impedance of the electro-absorption modulation region is greater than that of the high-frequency signal line; The matching circuit is connected in parallel with the electro-absorption modulation region to reduce the impedance of the electro-absorption modulation region.

9. The optical module according to claim 7, wherein There is also a signal transmission line on the surface of the electro-absorption modulation region; The electrical signal received by the first wire bonding is divided into two paths. One path of the electrical signal reaches the inside of the electro-absorption modulation region along the signal transmission line, and the other path of the electrical signal is output from the laser chip along the second wire bonding.

10. The optical module according to claim 6, wherein, The dielectric constant of the medium is between 1 and 8.

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