Perovskite cell, preparation method thereof and photovoltaic module
By using a composite passivation layer prepared with F-C polymer and PMMA in perovskite batteries, the problem of insufficient stability of perovskite batteries in complex outdoor environments is solved, and the effect of improving ultraviolet resistance and thermal stability is achieved.
Patent Information
- Application Number
- CN202311772463.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-21
- Publication Date
- 2025-06-24
AI Technical Summary
The existing perovskite solar cell modules are insufficient in complex outdoor environments, especially under conditions of light, humidity and temperature changes, and there is a problem of insufficient UV resistance.
The preparation raw materials are made of F-C-containing polymer and polymethyl methacrylate (PMMA). Through the coordinated use of these materials, the outdoor UV resistance performance of perovskite batteries and the extremely poor energy of hole transport layer are improved, while the conductivity of PMMA and the solubility of F-C-containing polymer are improved, and the thermal stability of the composite passivation layer is enhanced.
It ensures that the perovskite battery can work stably in complex outdoor environments, improves the UV resistance and thermal stability, and enhances the battery's outdoor application capabilities.
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Figure CN120201855A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of solar energy, and relates to a structure of a solar cell module, in particular to a perovskite solar cell, a preparation method thereof, and a photovoltaic module. Background Art
[0002] The technology of perovskite solar cells, which emerged in 2009, has achieved a "feat" of breaking through 25% in laboratory conversion efficiency from technology development in just ten years. The rapid development of perovskite solar cells has led to breakthrough progress in the efficiency and stability of perovskite modules. For example, the efficiency of perovskite modules of about 0.7 m 2 can reach 18%.
[0003] However, current perovskite modules still need to be tested under outdoor operating conditions, which include complex environments such as light, humidity, and temperature, and are more complex compared to IEC. There is currently no existing technology to improve this, so it is urgent to improve the outdoor stability of perovskite modules. Summary of the Invention
[0004] The purpose of the present invention is to provide a perovskite solar cell, a preparation method thereof, and a photovoltaic module. The photovoltaic module containing the perovskite solar cell can resist ultraviolet rays, ensuring that the perovskite solar cell can work stably under complex outdoor environments.
[0005] To achieve the purpose of this invention, the following technical solutions are adopted:
[0006] In the first aspect, the present invention provides a perovskite solar cell, which includes a hole transport layer and a perovskite layer, and a composite passivation layer is provided between the perovskite layer and the hole transport layer;
[0007] The preparation raw materials of the composite passivation layer include F-C-containing polymer and polymethyl methacrylate (PMMA).
[0008] The use of the F-C-containing polymer in the composite passivation layer of the present invention effectively improves the ability of outdoor ultraviolet resistance, and the use of PMMA can improve the energy band difference of the hole transport layer; moreover, the synergistic use of PMMA and the F-C-containing polymer improves the defects of poor conductivity and difficult charge transport of PMMA, increases the solubility of the F-C-containing polymer, and also improves the thermal stability of the composite passivation layer; therefore, it ensures that the perovskite solar cell can work stably under complex outdoor environments.
[0009] Preferably, the thickness of the composite passivation layer is 2 - 10 nm.
[0010] Preferably, the F-C-containing polymer includes any one or a combination of at least two of polyvinylidene fluoride (PVDF), polyvinyl fluoride (PVF), polychlorotrifluoroethylene (PCTFE), or ethylene-tetrafluoroethylene copolymer (ETFE).
[0011] Preferably, the mass ratio of the F-C-containing polymer to polymethyl methacrylate is (2-6):(8-4).
[0012] Preferably, the perovskite battery further includes a conductive base layer, an electron transport layer, and a back electrode.
[0013] Preferably, a buffer layer is provided between the electron transport layer and the back electrode.
[0014] In a second aspect, the present invention provides a method for preparing the perovskite battery according to the first aspect, and the preparation method includes the following steps:
[0015] (1) Mix and react the F-C-containing polymer and polymethyl methacrylate in an organic solvent according to the formula amount to obtain a homogeneous solution, and dry it to obtain a polymer blend;
[0016] (2) Dissolve the polymer blend obtained in step (1), and then place the obtained solution on the surface of the hole transport layer, and perform annealing treatment to obtain the composite passivation layer.
[0017] Preferably, the temperature of the mixing reaction in step (1) is 65-85°C.
[0018] Preferably, the time of the mixing reaction in step (1) is 0.5-3 h.
[0019] Preferably, the temperature of the annealing treatment in step (2) is 110-130°C.
[0020] Preferably, the time of the annealing treatment in step (2) is 8-12 min.
[0021] Preferably, the organic solvent in step (1) includes any one or a combination of at least two of N,N-dimethylformamide (DMF), N-methylpyrrolidone (NMP), or dimethyl sulfoxide (DMSO).
[0022] Preferably, the concentration of the homogeneous solution in step (1) is 3-8 mg / mL.
[0023] Preferably, the dissolution in step (2) is carried out with an organic solvent;
[0024] Preferably, the organic solvent used for dissolution in step (2) includes any one or a combination of at least two of N,N-dimethylformamide, N-methylpyrrolidone, or dimethyl sulfoxide.
[0025] Preferably, the concentration of the dissolution solution in step (2) is 0.3 - 1 mg / mL.
[0026] In a third aspect, the present invention provides a photovoltaic module, which includes the perovskite cell described in the first aspect.
[0027] Compared with the prior art, the present invention has the following beneficial effects:
[0028] The composite passivation layer of the present invention effectively improves the ability of outdoor anti-ultraviolet performance through the use of F-C-containing polymer, and can improve the energy level difference of the hole transport layer through the use of PMMA; moreover, the synergistic use of PMMA and F-C-containing polymer improves the defects of poor conductivity and difficult charge transport of PMMA, increases the solubility of the F-C-containing polymer, and improves the thermal stability of the composite passivation layer; therefore, it ensures that the perovskite cell can work stably in the complex outdoor environment. Description of the Drawings
[0029] Figure 1 Schematic diagram of the dissolution of the polymer blend obtained in Example 1;
[0030] Figure 2 Schematic diagram of the perovskite cell provided in Example 1;
[0031] 1, conductive base layer; 2, hole transport layer; 3, composite passivation layer; 4, perovskite absorption layer; 5, electron transport layer; 6, buffer layer, 7, back electrode. Detailed Embodiments
[0032] The technical solutions of the present invention will be further described below through specific embodiments. Those skilled in the art should understand that the embodiments are only for helping to understand the present invention and should not be regarded as specific limitations on the present invention.
[0033] An embodiment of the present invention provides a perovskite cell, which includes a hole transport layer and a composite passivation layer combined with the hole transport layer;
[0034] The preparation raw materials of the composite passivation layer include F-C-containing polymer and polymethyl methacrylate (PMMA).
[0035] The composite passivation layer of the present invention effectively improves the ability of outdoor anti-ultraviolet performance through the use of F-C-containing polymer, and can improve the energy level difference of the hole transport layer through the use of PMMA; moreover, the synergistic use of PMMA and F-C-containing polymer improves the defects of poor conductivity and difficult charge transport of PMMA, increases the solubility of the F-C-containing polymer, and improves the thermal stability of the composite passivation layer; therefore, it ensures that the perovskite cell can work stably in the complex outdoor environment.
[0036] In some embodiments, the number-average molecular weight of the F-C-containing polymer is 40,000 - 80,000. For example, it can be 40,000, 45,000, 50,000, 55,000, 60,000, 65,000, 70,000, 75,000, or 80,000, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.
[0037] In some embodiments, the number-average molecular weight of the polymethyl methacrylate is 250,000 - 500,000. For example, it can be 250,000, 300,000, 350,000, 400,000, 450,000, or 500,000, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.
[0038] In some embodiments, the thickness of the composite passivation layer is 2 - 10 nm. For example, it can be 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 8 nm, or 10 nm, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.
[0039] In some embodiments, the F-C-containing polymer includes any one or a combination of at least two of polyvinylidene fluoride (PVDF), polyvinyl fluoride (PVF), polychlorotrifluoroethylene (PCTFE), or ethylene-tetrafluoroethylene copolymer (ETFE). Exemplary but non-limiting combinations include the combination of PVDF and PVF, the combination of PCTFE and ETFE, the combination of PVDF, PVF, and PCTFE, or the combination of PVDF, PVF, PCTFE, and ETFE.
[0040] In some embodiments, the mass ratio of the F-C-containing polymer to the polymethyl methacrylate is (2 - 6):(8 - 4). For example, it can be 2:8, 3:7, 4:6, 5:5, or 6:4, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.
[0041] Exemplarily, the material of the hole transport layer includes any one or a combination of at least two of self-assembled monolayers (SAMs), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), or NiO x where the value of x ranges from 1 to 1.67. For example, it can be 1, 1.2, 1.4, 1.5, 1.6, or 1.67, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.
[0042] NiO xMaterials used as hole transport layers have the disadvantages of poor conductivity, mismatched energy levels, poor light transmittance, and reaction with perovskite. Existing technologies mainly passivate the x surface of NiO or modify it by doping to improve the energy level difference and conductivity. For example, PTAA layer modification or SAM layer modification, and Cu, Li, Mg are used to improve conductivity; there are also some studies x focusing on the redox reaction between NiO and the perovskite absorption layer. For example, PMMA, Al2O3, and silicon oxides are used to block the redox reaction, but no improvement has been made on its outdoor stability.
[0043] The present invention effectively improves the ability of outdoor ultraviolet resistance through the use of F-C polymers, and can improve the energy level difference of the hole transport layer through the use of PMMA, ensuring that the perovskite battery can work stably in complex outdoor environments.
[0044] In some embodiments, the perovskite battery further includes a conductive base layer, an electron transport layer, and a back electrode.
[0045] In some embodiments, a buffer layer is provided between the electron transport layer and the back electrode.
[0046] In some embodiments, the thickness of the conductive base layer is 500 - 600 nm. For example, it can be 500 nm, 520 nm, 550 nm, 560 nm, 580 nm, or 600 nm, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.
[0047] In some embodiments, the material of the conductive base layer includes fluorine-doped tin oxide (FTO) and / or indium tin oxide (ITO).
[0048] In some embodiments, the thickness of the hole transport layer is 20 - 200 nm. For example, it can be 20 nm, 50 nm, 80 nm, 100 nm, 150 nm, or 200 nm, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.
[0049] In some embodiments, the material of the hole transport layer includes any one or at least two combinations of self-assembled monolayers (SAM), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), or NiO x where the value range of x is 1 - 1.67.
[0050] In some embodiments, the thickness of the perovskite absorption layer is 200 - 600 nm, for example, it can be 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm or 600 nm, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.
[0051] In some embodiments, the general formula of the material of the perovskite absorption layer is ABX3, where
[0052] A includes CH3NH 3+ , (NH2)2CH + , Cs + or Rb + Any one or a combination of at least two of them. Typical but non - restrictive combinations include the combination of CH3NH 3+ and (NH2)2CH + , the combination of Cs + and Rb + , the combination of CH3NH 3+ , (NH2)2CH + and Cs + , the combination of (NH2)2CH + , Cs + and Rb + , or the combination of CH3NH 3+ , (NH2)2CH + , Cs + and Rb + .
[0053] B includes Pb 2+ , Sn 2+ or Bi 2+ Any one or a combination of at least two of them. Typical but non - restrictive combinations include the combination of Pb 2+ and Sn 2+ , the combination of Sn 2+ and Bi 2+ , the combination of Pb 2+ and Bi 2+ , or the combination of Pb 2+ , Sn 2+ and Bi 2+ .
[0054] X includes Cl - , Br - or I - Any one or a combination of at least two of them. Typical but non - restrictive combinations include the combination of Cl - and Br - , the combination of Br - and I -Combination of, Cl - and I - Combination of, or Cl−, Br - and I - Combination.
[0055] In some embodiments, the thickness of the electron transport layer is 20 - 200 nm, for example, it can be 20 nm, 50 nm, 80 nm, 100 nm, 150 nm or 200 nm, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.
[0056] In some embodiments, the material of the electron transport layer (ETL) includes C 60 , [6,6]-phenyl-C61-butyric acid isobutyl ester (PCBM) or any one or at least two combinations of PCBM derivatives. Typical but non-limiting combinations include C 60 and PCBM combination, PCBM and PCBM derivative combination, C 60 and PCBM derivative combination, or C 60 , PCBM and PCBM derivative combination.
[0057] In some embodiments, the thickness of the buffer layer is 60 - 100 nm, for example, it can be 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm or 90 nm, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.
[0058] In some embodiments, the material of the buffer layer includes any one or at least two combinations of SnO2, IWO or 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). Typical but non-limiting combinations include SnO2 and IWO combination, IWO and BCP combination, SnO2 and BCP combination, or SnO2, IWO and BCP combination.
[0059] In some embodiments, the thickness of the back electrode is 60 - 100 nm, for example, it can be 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm or 90 nm, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.
[0060] In some embodiments, the material of the back electrode includes any one or at least two combinations of Cu, Au or Ag. Typical but non-limiting combinations include Cu and Au combination, Au and Ag combination, Cu and Ag combination, or Cu, Au and Ag combination.
[0061] In some embodiments, from the perspective of stability, the material of the conductive base layer is FTO, and the material of the hole transport layer is NiO x (where x is 1.67), and the material of the perovskite absorption layer is FA 0.85 Cs 0.15 PbI3, and the material of the electron transport layer is C 60 , and the material of the buffer layer is SnO2, and the material of the back electrode is Cu.
[0062] An embodiment of the present invention provides a method for preparing a perovskite battery in some embodiments, and the preparation method includes the following steps:
[0063] (1) Mix and react an F-C polymer and polymethyl methacrylate in an organic solvent according to the formula amount to obtain a homogeneous solution, and dry it to obtain a polymer blend;
[0064] (2) Dissolve the polymer blend obtained in step (1), and then set the obtained solution on the surface of the hole transport layer, and perform annealing treatment to obtain the composite passivation layer.
[0065] In some embodiments, the temperature of the mixing reaction in step (1) is 65-85°C. For example, it can be 65°C, 70°C, 75°C, 80°C or 85°C, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.
[0066] In some embodiments, the time of the mixing reaction in step (1) is 0.5-3 h. For example, it can be 0.5 h, 1 h, 1.5 h, 2 h, 2.5 h or 3 h, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.
[0067] In some embodiments, the temperature of the annealing treatment in step (2) is 110-130°C. For example, it can be 110°C, 115°C, 120°C, 125°C or 130°C, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.
[0068] In the present invention, when the temperature of the annealing treatment in step (2) is too low, the perovskite crystallization will be slow and heterophase will appear; while when the temperature is too high, pinholes will appear, resulting in poor crystallization quality.
[0069] In some embodiments, the time of the annealing treatment in step (2) is 8-12 min. For example, it can be 8 min, 9 min, 10 min, 11 min or 12 min, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.
[0070] In some embodiments, the organic solvent in step (1) includes any one or a combination of at least two of N,N-dimethylformamide (DMF), N-methylpyrrolidone (NMP), or dimethyl sulfoxide (DMSO). Typical but non-limiting combinations include the combination of DMF and NMP, the combination of NMP and DMSO, the combination of DMF and DMSO, or the combination of DMF, NMP, and DMSO.
[0071] In some embodiments, the concentration of the homogeneous solution in step (1) is 3 - 8 mg / mL. For example, it can be 3 mg / mL, 4 mg / mL, 5 mg / mL, 6 mg / mL, or 8 mg / mL, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.
[0072] In some embodiments, the dissolution in step (2) is carried out using an organic solvent.
[0073] In some embodiments, the organic solvent used for the dissolution in step (2) includes any one or a combination of at least two of N,N-dimethylformamide, N-methylpyrrolidone, or dimethyl sulfoxide. Typical but non-limiting combinations include the combination of DMF and NMP, the combination of NMP and DMSO, the combination of DMF and DMSO, or the combination of DMF, NMP, and DMSO.
[0074] In some embodiments, the concentration of the dissolution solution in step (2) is 0.3 - 1 mg / mL. For example, it can be 0.3 mg / mL, 0.5 mg / mL, 0.6 mg / mL, 0.8 mg / mL, 0.9 mg / mL, or 1 mg / mL, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.
[0075] In some embodiments, the method of setting in step (2) includes any one or a combination of at least two of spraying, blade coating, or slot-die coating. Typical but non-limiting combinations include the combination of spraying and blade coating, the combination of blade coating and slot-die coating, the combination of spraying and slot-die coating, or the combination of spraying, blade coating, and slot-die coating.
[0076] In some embodiments, before dissolution, the F-C polymer in step (1) is dried under vacuum.
[0077] In some embodiments, the temperature for drying the F-C polymer under vacuum is 95 - 105 °C, and the time is 10 - 15 h.
[0078] In some embodiments, before dissolution, the polymethyl methacrylate in step (1) is dried under vacuum.
[0079] In some embodiments, the temperature for vacuum drying PMMA is 95 - 105 °C, and the time is 10 - 15 h.
[0080] In the present invention, the temperature for vacuum drying is 95 - 105 °C. For example, it can be 95 °C, 98 °C, 100 °C, 102 °C or 105 °C, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.
[0081] In the present invention, the time for vacuum drying is 10 - 15 h. For example, it can be 10 h, 12 h, 13 h, 14 h or 15 h, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.
[0082] Exemplarily, taking the material of the conductive base layer as FTO, the material of the hole transport layer as NiO x (where x is 1.67), the material of the perovskite absorption layer as FA 0.85 Cs 0.15 PbI3 (FA is (NH2)2CH + ), the material of the electron transport layer as C 60 , the material of the buffer layer as SnO2, and the material of the back electrode as Cu as an example, the method for preparing a perovskite solar cell includes the following steps:
[0083] I) Provide the substrate material FTO, and prepare a nickel oxide thin film on the substrate material as the hole transport layer;
[0084] II) Prepare the composite passivation layer according to the method of the above embodiment;
[0085] III) Preparation of the perovskite layer: Spin - coat the FA 0.85 Cs 0.15 PbI3 perovskite precursor solution on the surface of the prepared passivation layer at a spin - coating speed of 10 - 15 mm / s; Purge the spin - coated film with nitrogen, and then place it under the condition of a temperature of 100 - 130 °C and anneal for 30 - 60 min to obtain the FA 0.85 Cs 0.15 PbI3 perovskite layer;
[0086] IV) Evaporate C 60 and SnO2 in sequence to prepare the electron transport layer and the buffer layer;
[0087] V) Evaporate the Cu electrode to obtain the FTO / NiO X / composite passivation layer / FA 0.85 Cs 0.15 PbI3 / C 60 / SnO2 / Cu perovskite solar cell.
[0088] An embodiment of the present invention provides a photovoltaic module, which includes a perovskite battery in certain embodiments.
[0089] To clearly illustrate the technical solution of the present invention, the PMMA used in the specific embodiments is PMMA pretreated by vacuum drying. The temperature of the vacuum drying is 100 °C, the time is 12 h, and the absolute pressure is 0.1 Pa; the F-C polymer-containing used in the specific embodiments is the F-C polymer-containing pretreated by vacuum drying. The temperature of the vacuum drying is 100 °C, the time is 12 h, and the absolute pressure is 0.1 Pa. The above descriptions of PMMA and the F-C polymer-containing are not regarded as further limitations on the technical solution of the present invention.
[0090] In the specific embodiments of the present invention, the outdoor stability of the perovskite battery is tested. The test conditions are: the total plane radiation is 3 kwh / m 2 / day, and the UV irradiation intensity is 0.28 kwh / m 2 / day. The power generation efficiencies of non-irradiated (recorded as 0 day), irradiated for 30 days, irradiated for 60 days, irradiated for 90 days, and irradiated for 120 days are respectively recorded. Among them, the test method for the power generation efficiency is a handheld IV meter.
[0091] Example 1
[0092] This embodiment also provides a perovskite battery as Figure 2 shown. The perovskite battery has a PIN structure and includes a conductive base layer 1, a hole transport layer 2, a composite passivation layer 3, a perovskite absorption layer 4, an electron transport layer 5, a buffer layer 6, and a back electrode 7 that are sequentially stacked;
[0093] The material of the conductive base layer 1 is conventional FTO, and the material of the hole transport layer 2 is NiO 1.67 , the material of the perovskite absorption layer 4 is FA 0.85 Cs 0.15 PbI3, the material of the electron transport layer 5 is C 60 , the material of the buffer layer 6 is SnO2, and the material of the back electrode 7 is Cu;
[0094] The preparation raw materials of the composite passivation layer 3 include PMMA and PVDF with a mass ratio of 8:2. Among them, the number-average molecular weight of PMMA is 350,000, and the number-average molecular weight of PVDF is 53,400;
[0095] The preparation method of the perovskite battery in this embodiment includes the following steps:
[0096] I) Provide a substrate material FTO with a thickness of 550 nm, and prepare a nickel oxide thin film with a thickness of 20 nm on the substrate material as the hole transport layer 2;
[0097] II) Mix polyvinylidene fluoride and polymethyl methacrylate in DMF according to the formulation amounts for a reaction to obtain a homogeneous solution of 5 mg / mL, and dry it to obtain a polymer blend; use DMF as an organic solvent to dissolve the obtained polymer blend to obtain a solution with a concentration of 0.8 mg / mL; then spray the obtained solution on the surface of the hole transport layer 2 and perform annealing treatment at 120 °C for 10 min to obtain a composite passivation layer 3 with a thickness of 5 nm;
[0098] The temperature of the mixing reaction is 75 °C and the time is 2 h;
[0099] III) Preparation of the perovskite layer: Spin coat the FA 0.85 Cs 0.15 PbI3 perovskite precursor solution on the surface of the prepared passivation layer at a spin coating speed of 10 - 15 mm / s; purge the spin-coated film with nitrogen, and then place it under the condition of a temperature of 100 - 130 °C for annealing for 30 - 60 min to obtain an FA 0.85 Cs 0.15 PbI3 perovskite layer with a thickness of 400 nm;
[0100] IV) Evaporate C 60 and SnO2 in sequence to prepare an electron transport layer 5 with a thickness of 100 nm and a buffer layer 6 with a thickness of 90 nm;
[0101] V) Evaporate a Cu electrode with a thickness of 90 nm to obtain an FTO / NiO X / composite passivation layer / FA 0.85 Cs 0.15 PbI3 / C 60 / SnO2 / Cu perovskite solar cell.
[0102] Figure 1 FIG. 36 is a schematic diagram of the dissolution of the mixed copolymer obtained in step II. The leftmost is PMMA dissolved in DMF, the middle is PVDF dissolved in DMF, and the rightmost is the mixed copolymer dissolved in DMF.
[0103] In Examples 2 - 6, except that the mass ratio of PMMA to PVDF changes as shown in Table 1, the rest are the same as in Example 1.
[0104] Table 1
[0105]
[0106] In Examples 8 - 12, except that the concentration of the solution changes as shown in Table 2, the rest are the same as in Example 4.
[0107] Table 2
[0108]
[0109]
[0110] In Examples 13 - 15, except that the F - C polymer changes as shown in Table 3, the rest are the same as in Example 4.
[0111] Table 3
[0112] F-C containing polymer 0 days 30 days 60 days 90 days 120 days Example 4 PVDF 21.2% 20.6% 20.5% 20.4% 20.3% Example 13 PVF 20.8% 20.5% 20.1% 19.5% 19.3% Example 14 PCTFE 19.8% 19.5% 19.3% 19.1% 18.9% Example 15 ETFE 20.2% 20.0% 19.8% 19.5% 19.1%
[0113] Comparative Example 1
[0114] This comparative example provides a perovskite solar cell, which is the same as Example 4 except that PVDF is not used.
[0115] The preparation method of the perovskite solar cell described in this comparative example is different from that in Example 1 as follows:
[0116] II) Use DMF as an organic solvent to dissolve PMMA, dry it to obtain a polymer; the temperature of the dissolution is 70 °C and the time is 2 h; use DMF as an organic solvent to dissolve the obtained polymer to obtain a solution with a concentration of 0.8 mg / mL; then spray the obtained solution on the surface of the hole - transporting layer, and perform annealing treatment at 120 °C for 10 min to obtain a passivation layer with a thickness of 5 nm.
[0117] Test the outdoor stability of the perovskite module structure provided in this comparative example, and the obtained results are shown in Table 4.
[0118] Comparative Example 2
[0119] This comparative example provides a perovskite solar cell, which is the same as Example 4 except that PMMA is not used.
[0120] The preparation method of the perovskite solar cell described in this comparative example is different from that in Example 1 as follows:
[0121] II) Use DMF as an organic solvent to dissolve PVDF, dry it to obtain a polymer; the temperature of the dissolution is 70 °C and the time is 2 h; use DMF as an organic solvent to dissolve the obtained polymer to obtain a solution with a concentration of 0.8 mg / mL; then spray the obtained solution on the surface of the hole - transporting layer, and perform annealing treatment at 120 °C for 10 min to obtain a passivation layer with a thickness of 5 nm.
[0122] Test the outdoor stability of the perovskite module structure provided in this comparative example, and the obtained results are shown in Table 4.
[0123] Comparative Example 3
[0124] This comparative example provides a perovskite structure component structure, which is the same as that of Example 4 except that the composite passivation layer is not provided.
[0125] The outdoor stability of the perovskite component structure provided in this comparative example was tested, and the results are shown in Table 4.
[0126] Table 4
[0127]
[0128]
[0129] In summary, the composite passivation layer of the present invention effectively improves the ability of outdoor ultraviolet resistance through the use of F-C polymer, and can improve the energy band difference of the hole transport layer through the use of PMMA; moreover, the synergistic use of PMMA and F-C polymer improves the defects of poor conductivity and difficult charge transport of PMMA, increases the solubility of F-C polymer, and improves the thermal stability of the composite passivation layer; therefore, it ensures that the perovskite battery can work stably in the outdoor complex environment.
[0130] The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of within the technical scope disclosed by the present invention by those skilled in the art all fall within the protection scope and disclosure scope of the present invention.
Claims
1. A perovskite solar cell, characterized in that, The perovskite solar cell includes a hole transport layer and a perovskite layer, and a composite passivation layer is disposed between the perovskite layer and the hole transport layer; The preparation raw materials of the composite passivation layer include an F-C-containing polymer and polymethyl methacrylate.
2. The perovskite cell according to claim 1, wherein The thickness of the composite passivation layer is 2-10 nm.
3. The perovskite cell according to claim 1 or 2, characterized in that, The F-C-containing polymer includes any one or a combination of at least two of polyvinylidene fluoride, polyvinyl fluoride, polychlorotrifluoroethylene, or ethylene-tetrafluoroethylene copolymer; Preferably, the mass ratio of the F-C-containing polymer to polymethyl methacrylate is (2-6):(8-4).
4. The perovskite cell according to any one of claims 1-3, characterized in that, The perovskite solar cell further includes a conductive base layer, an electron transport layer, and a back electrode; Preferably, a buffer layer is disposed between the electron transport layer and the back electrode.
5. The preparation method of the perovskite battery according to any one of claims 1-4, characterized in that, The preparation method includes the following steps: (1) Mix and react the F-C-containing polymer and polymethyl methacrylate in an organic solvent according to the formula amounts to obtain a homogeneous solution, and dry it to obtain a polymer blend; (2) Dissolve the polymer blend obtained in step (1), then place the obtained solution on the surface of the hole transport layer, and perform annealing treatment to obtain the composite passivation layer.
6. The preparation method according to claim 5, characterized in that, The temperature of the mixing reaction in step (1) is 65-85 °C; Preferably, the time of the mixing reaction in step (1) is 0.5-3 h.
7. The preparation method according to claim 5 or 6, characterized in that, The temperature of the annealing treatment in step (2) is 110-130 °C; Preferably, the time of the annealing treatment in step (2) is 8-12 min.
8. The preparation method according to any one of claims 5 to 7, characterized in that, The organic solvent in step (1) includes any one or a combination of at least two of N,N-dimethylformamide, N-methylpyrrolidone, or dimethyl sulfoxide; Preferably, the concentration of the homogeneous solution in step (1) is 3-8 mg / mL.
9. The preparation method according to any one of claims 5-8, characterized in that, The dissolution in step (2) is carried out with an organic solvent; Preferably, the organic solvent used for dissolution in step (2) includes any one or a combination of at least two of N,N-dimethylformamide, N-methylpyrrolidone, or dimethyl sulfoxide; Preferably, the concentration of the solution in step (2) is 0.3-1 mg / mL.
10. A photovoltaic module, characterized in that, The photovoltaic module includes the perovskite solar cell according to any one of claims 1-4.