A monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier

Abstract

The present invention discloses a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier, belonging to the field of radio transceiver technology. The source comprises a substrate and an RTO, an RTA, and an on-chip antenna located above the substrate. The RTA comprises an RTD die pair and an orthogonal hybrid coupler, wherein the RTD die pair comprises a first RTD and a second RTD. The RTO is used to generate an oscillation signal, which is input into the RTA for reflection amplification and then output and radiated through the on-chip antenna. The present invention utilizes the negative differential conductance formed by the resonant tunneling effect of the RTD to compensate for the losses of the RTO's transmission line and radiating antenna to form an oscillation signal. The oscillation signal is then reflected and enhanced by the orthogonal hybrid coupler to achieve voltage gain output, thereby increasing the output power of the single integrated radiation source. The monolithic radiation source can also be expanded as an array unit into an RTD radiation source array structure to further amplify the output power of the RTD radiation source.

Description

Technical Field

[0001] The present invention belongs to the technical field of radio transceivers, and in particular relates to a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier. Background Art

[0002] Resonant tunneling diodes (RTDs) are two-terminal devices based on the quantum tunneling effect. Due to the short electron tunneling time and extremely small device junction capacitance, RTDs exhibit high frequency, high speed, low power consumption, bistability, and self-locking properties. RTD technology is expected to become one of the core supporting technologies for future 6G technology, playing a vital role in the integrated space-ground information network and the intelligent interconnection of all things. RTD devices are ideal for miniaturizing and compacting terahertz solid-state radiation sources that operate at low power at room temperature. Radiation sources manufactured using RTD devices feature small size, light weight, easy integration, room-temperature operation, and low power consumption, making them one of the primary applications of RTD technology. However, the main technical bottleneck currently restricting the development of RTD radiation sources is their low output power. Possible solutions include achieving breakthroughs in the output power of single-tube RTD radiation sources and adopting array designs of RTD radiation sources.

[0003] Because the negative differential conductance (NDC) of RTDs can compensate for transmission line or radiating antenna losses and provide gain, RTDs can be used to implement amplification. A common RTD amplifier is a reflection-based RTD amplifier (RTA). In 2013, Jongwon Lee and others from the Korea Advanced Institute of Science and Technology proposed a monolithic integrated low-power RTA circuit that adopted a reflective amplification architecture (DOI: 10.1109 / ICIPRM.2013.6562608); in 2014, Jongwon Lee further optimized the circuit structure and proposed an RTA circuit with low DC power consumption; subsequently, in 2017 and 2020, Jongwon Lee further improved the circuit performance and conducted circuit noise analysis; at the same time, in 2022, Ahmed Khalid A Alqurashi of the University of Manchester, UK, reported an RTA circuit operating in the X-band (doctoral thesis: Advanced Tunneling Diodes for High-Frequency Applications and Wireless Communication Systems).

[0004] In summary, combining the RTA and RTD oscillator (RTD Oscillator, RTO) and integrating the on-chip antenna at the same time to realize a homogeneous and isomorphic monolithic integrated radiation source can hopefully increase the output power of a single integrated radiation source, and further expanding it into an array can achieve further improvement in radiation power. Summary of the Invention

[0005] In response to the technical bottleneck of low output power faced by traditional RTD radiation sources, the present invention provides a monolithic radiation source that integrates a resonant tunneling diode oscillator and a reflective amplifier. It can simultaneously generate and amplify microwave, millimeter-wave and terahertz frequencies, and realize electromagnetic wave radiation through a monolithic integrated on-chip antenna. It has a compact structure and can be expanded into an array as an array unit to further amplify the output power of the radiation source.

[0006] The technical solutions adopted in the present invention are as follows:

[0007] A monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier comprises a substrate, and a resonant tunneling diode oscillator (RTO), a reflective resonant tunneling diode amplifier (RTA), and an on-chip antenna located above the substrate;

[0008] The RTO generates an oscillation signal under a first DC bias and inputs the oscillation signal to the RTA;

[0009] The RTA includes an RTD die pair and an orthogonal hybrid coupler, the RTD die pair includes a first RTD and a second RTD, and the orthogonal hybrid coupler includes a first port, a second port, a third port, and a fourth port; wherein the first port, the second port, the third port, and the fourth port are located at the intersection of four corresponding orthogonal arms; the first RTD is connected to the third port, and the second RTD is connected to the fourth port; the oscillation signal generated by the RTO is input from the first port to the RTA, and after reflection amplification, is output from the second port;

[0010] The on-chip antenna is connected to the second port of the RTA to radiate the amplified oscillation signal.

[0011] Furthermore, the RTO includes a stabilizing resistor, a decoupling capacitor, a resonant inductor, a third RTD and a DC blocking capacitor connected in sequence. By applying a first DC bias to the stabilizing resistor, the RTO generates an oscillation signal, which is output through the DC blocking capacitor.

[0012] Furthermore, the first RTD, the second RTD and the third RTD adopt the same structure and material system.

[0013] Furthermore, the material system of the first RTD, the second RTD and the third RTD is a GaN / AlN material system or an InP / InGaAs / AlAs material system.

[0014] Furthermore, the resonant inductor is implemented using a coplanar waveguide microstrip line structure with short-circuited terminals.

[0015] Furthermore, the first series capacitor, the second series capacitor, the third series capacitor, the fourth series capacitor and the decoupling capacitor are all Metal-Insulator-Metal (MIM) capacitors.

[0016] Furthermore, the stabilizing resistor is a thin film resistor.

[0017] Furthermore, the quadrature hybrid coupler further includes a first series capacitor, a second series capacitor, a third series capacitor, and a fourth series capacitor located at the intersection of the four corresponding quadrature arms.

[0018] Furthermore, the first port, the second port, the third port and the fourth port are each composed of two sub-ports; wherein, a sub-port 1_1 of the first port is connected to the DC blocking capacitor, and the other sub-port 1_2 is connected to the first inductor; a sub-port 2_1 of the second port is connected to the on-chip antenna, and the other sub-port 2_2 is connected to the second inductor; a sub-port 3_1 of the third port is connected to the first RTD, and the other sub-port 3_2 is connected to the second DC bias through the third inductor and the first bypass capacitor; a sub-port 4_1 of the fourth port is connected to the second RTD, and the other sub-port 4_2 is connected to the third DC bias through the fourth inductor and the second bypass capacitor.

[0019] Furthermore, the third DC bias is the same as the second DC bias.

[0020] Furthermore, the first inductor, the second inductor, the third inductor and the fourth inductor are implemented by using sub-λ / 4 microstrip stubs or spiral inductors with short-circuited terminals.

[0021] Furthermore, the on-chip antenna adopts structures such as an on-chip rectangular patch antenna, a bowtie patch antenna, a spiral patch antenna, a slot antenna, an antenna with an integrated micro-resonant cavity, and an antenna with an integrated back cavity.

[0022] Furthermore, the substrate is made of GaN or InP.

[0023] The present invention also proposes an RTD radiation source array structure, which includes a plurality of monolithic radiation sources that are arranged in an array and integrate resonant tunneling diode oscillators and reflective amplifiers.

[0024] The beneficial effects of the present invention are:

[0025] 1. The present invention proposes a monolithic radiation source that integrates a resonant tunneling diode oscillator and a reflective amplifier. The negative differential conductance formed by the resonant tunneling effect of the RTD is used to compensate for the losses of the RTO's transmission line and radiating antenna to form an oscillating signal. The oscillating signal is then reflected and enhanced by an orthogonal hybrid coupler to achieve voltage gain output, thereby increasing the output power of the single integrated radiation source.

[0026] 2. The single-chip radiation source proposed in the present invention can be used as an array unit to expand into an RTD radiation source array structure, further amplifying the output power of the RTD radiation source;

[0027] 3. The monolithic radiation source proposed in the present invention has a compact structure and can be miniaturized, operate at room temperature, and is a highly reliable radiation source for high-speed microwave, millimeter wave, and terahertz synaesthesia integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a schematic diagram of the layout structure of a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Example 1 of the present invention;

[0029] Figure 2 This is a schematic diagram of the layout structure of the RTO in the monolithic radiation source integrating the resonant tunneling diode oscillator and the reflective amplifier proposed in Example 1 of the present invention;

[0030] Figure 3 This is a schematic diagram of the structure of a GaN-based RTD device in a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Example 1 of the present invention;

[0031] Figure 4 This is a schematic diagram of the layout structure of the RTA in the monolithic radiation source integrating the resonant tunneling diode oscillator and the reflective amplifier proposed in Example 1 of the present invention;

[0032] Figure 5 This is a schematic diagram of the layout structure of an on-chip antenna in a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Example 1 of the present invention;

[0033] Figure 6 This is a circuit schematic diagram of a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Example 1 of the present invention;

[0034] Figure 7 The oscillation characteristics of the RTO in the monolithic radiation source integrating the resonant tunneling diode oscillator and the reflective amplifier proposed in Example 1 of the present invention; (a) is a curve showing the output signal amplitude versus time; (b) is a schematic diagram showing the oscillation frequency;

[0035] Figure 8The amplification characteristics of the RTA in the monolithic radiation source integrating the resonant tunneling diode oscillator and the reflective amplifier proposed in Example 1 of the present invention; wherein (a) is the return loss curve; (b) is the power gain curve;

[0036] Figure 9 The overall output characteristics of the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Example 1 of the present invention;

[0037] Figure 10 Schematic diagram of the structure of an InP-based RTD device in a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Example 2 of the present invention;

[0038] Figure 11 Schematic diagram of the structure of the on-chip antenna in Embodiment 3 and Embodiment 4 of the present invention;

[0039] The descriptions of the symbols in the accompanying drawings are as follows:

[0040] 1: Substrate; 2: RTO; 3: RTA; 4: On-chip antenna; 5: Third RTD0; 6: Resonant inductor L OSC ;7: Decoupling capacitor C E ;8: Stabilizing resistor R E ;9: DC blocking capacitor C block ; 10: RTD die pair; 11: orthogonal hybrid coupler; 12: first RTD1; 13: second RTD2; 14: subport 1_1; 15: subport 1_2; 16: subport 2_1; 17: subport 2_2; 18: subport 3_1; 19: subport 3_2; 20: subport 4_1; 21: subport 4_2; 22: first series capacitor C p1 ; 23: Second series capacitor C p2 ;24: third series capacitor C s1 ; 25: fourth series capacitor C s2 ; 26: first inductor L1; 27: second inductor L2; 28: third inductor L3; 29: first bypass capacitor C pb1 ; 30: fourth inductor L4; 31: second bypass capacitor C pb2 . DETAILED DESCRIPTION

[0041] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0042] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0043] Example 1

[0044] This embodiment provides a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier, the structure of which is as follows: Figure 1 As shown, it includes a substrate 1 , and RTO 2 , RTA 3 and an on-chip antenna 4 located above the substrate 1 .

[0045] like Figure 2 As shown, the RTO2 includes stabilizing resistors R connected in sequence E 8. Decoupling capacitor C E 7. Resonant inductor L OSC 6. The third RTD0 5 and the DC blocking capacitor C block 9; wherein the third RTD0 5 is formed by photolithography and etching process to form the RTD junction region, using Figure 3 The GaN / AlN material system shown in FIG has a collector metal layer at its top, which is connected to the signal line (the orange line is used as the signal line in the figure of this embodiment), and an emitter metal layer at its bottom, which is connected to the ground line (the yellow line is used as the ground line in the figure of this embodiment); the resonant inductor L OSC 6 is realized by using a coplanar waveguide microstrip line structure with a short-circuited terminal. One end of the structure is connected to the collector metal layer of the third RTD05, and the other end is connected to the decoupling capacitor C E 7 is connected to the top metal layer; decoupling capacitor C E The top metal layer of 7 is connected to the signal line, the bottom metal layer is connected to the ground line, and the material of the middle dielectric layer is S i N x ;Stabilizing resistor R E 8 is located between the signal line and the ground line, and is formed by thin film sputtering deposition process. Its material is N i C r ; DC blocking capacitor C block 9 is located on the right side of the third RTD05, specifically a series capacitor, its bottom metal layer is interconnected with the signal line, its top metal layer is used as the output RF signal line of RTO2, and the middle dielectric layer material is S i N x .like Figure 2 As shown, the stabilizing resistor R E The left side of 8 is the first DC bias V bias1 Input port, DC blocking capacitor C blockThe right side of 9 is the RF output port of RTO2.

[0046] like Figure 4 As shown, the RTA3 includes an RTD die pair 10 and an orthogonal hybrid coupler 11. The RTD die pair 10 includes a first RTD1 12 and a second RTD2 13. The orthogonal hybrid coupler 11 includes a first port, a second port, a third port, a fourth port, a first series capacitor C p1 22. The second series capacitor C p2 23. The third series capacitor C s1 24 and the fourth series capacitor C s2 25; wherein the first port, the second port, the third port and the fourth port are located at the intersection of the four corresponding orthogonal arms, and are each composed of two sub-ports; a sub-port 1_1 14 of the first port is connected to the DC blocking capacitor C block 9, another sub-port 1_2 15 is connected to the first inductor L1 26; one sub-port 2_1 16 of the second port is connected to the on-chip antenna 4, and another sub-port 2_2 17 is connected to the second inductor L2 27; one sub-port 3_1 18 of the third port is connected to the first RTD1 12, and another sub-port 3_219 is connected to the first RTD1 12 through the third inductor L3 28 and the first bypass capacitor C pb1 29 is connected to the second DC bias V bias2 A sub-port 4_1 20 of the fourth port is connected to the second RTD2 13, and another sub-port 4_2 21 is connected to the second bypass capacitor C through the fourth inductor L4 30. pb2 31 is connected to the third DC bias V bias3 The first inductor L1 26 and the fourth inductor L4 30 adopt a microstrip line with a short-circuited terminal, and the second inductor L2 27 and the third inductor L3 28 adopt a sub-λ / 4 microstrip line with a short-circuited terminal; the first series capacitor C p1 22 is located on the orthogonal arm between the first port and the second port; the second series capacitor C p2 23 is located on the orthogonal arm between the third port and the fourth port; the third series capacitor C s1 24 is located on the orthogonal arm between the first port and the third port; the fourth series capacitor C s2 25 is located on the orthogonal arm between the second port and the fourth port; the other ends of the first RTD1 12 and the second RTD2 13 are grounded; the second DC bias V bias2 and the third DC bias V bias3 same.

[0047] like Figure 5 As shown, the on-chip antenna 4 adopts a rectangular microstrip patch structure. Figure 5 The left end of the 16-bit CMOS is connected to the subport 2_1.

[0048] In this embodiment, the structures and material systems of the first RTD1 12, the second RTD2 13 and the third RTD0 5 are the same; the first series capacitor C p1 22. The second series capacitor C p2 23. The third series capacitor C s1 24. The fourth series capacitor C s2 25 and decoupling capacitor C E 7 All use MIM capacitors.

[0049] The working principle of the monolithic radiation source integrated with the resonant tunneling diode oscillator and the reflective amplifier provided in this embodiment is as follows: Figure 6 As shown, the details are as follows:

[0050] For stabilizing resistor R E 8 Apply the first DC bias V bias1 , so that the negative differential conductance (NDC) formed by the third RTD0 5 can compensate for the resonant inductance L OSC 6. Decoupling capacitor C E 7 and stabilizing resistor R E 8 forms a resonant circuit loss. At this time, RTO2 meets the resonance condition and generates an oscillation signal. Its resonant frequency is f OSC Determined by the following formula:

[0051]

[0052] Among them, G n Represents the negative differential conductance value of the third RTD0 5, R s represents the contact resistance of the third RTD0 5, C n represents the self-capacitance of the third RTD0 5.

[0053] The generated oscillation signal is transmitted through the DC blocking capacitor C block 9 is input to RTA3 as the input signal V in ; In the second DC bias V bias2 and the third DC bias V bias3 Driven by the input signal V in The signal is reflected and amplified in the quadrature hybrid coupler 11 to obtain the output signal V of RTA3. out ; Among them, the output signal V out With the input signal V in There is a 270° phase difference between them, namely:

[0054] V out =Γ∠-270°

[0055] Where Γ represents the reflection coefficient, which can be expressed as:

[0056]

[0057] Where Z out is the output characteristic impedance of the quadrature hybrid coupler 11, Z RTD is the input impedance of the quadrature hybrid coupler 11;

[0058] Then, the power gain of RTA3 is obtained:

[0059] Power Gain=|Γ∠-270°| 2

[0060] Therefore, by cascading RTA3 at the end of RTO2, the output signal of RTO3 can be amplified, thereby increasing the output power of the oscillation signal and radiating it through the on-chip antenna 4.

[0061] Figure 7 This is the oscillation characteristic of the RTO in the monolithic radiation source integrating the resonant tunneling diode oscillator and the reflective amplifier proposed in this embodiment. The output signal amplitude is V RTO =V in =400mV, such as Figure 7 As shown in (a); its oscillation frequency is 10.8GHz, as shown in Figure 7 As shown in (b).

[0062] Figure 8 The amplification characteristics of the RTA in the monolithic radiation source integrating the resonant tunneling diode oscillator and the reflective amplifier proposed in this embodiment are such that the return loss can reach 10.3 dB at a frequency of 10.8 GHz. Figure 8 As shown in (a); its power gain can reach 12.5dB at 10.8GHz frequency, as shown in Figure 8 As shown in (b).

[0063] Figure 9 The overall output characteristics of the monolithic radiation source integrating the resonant tunneling diode oscillator and the reflective amplifier proposed in this embodiment are shown in FIG. in The voltage span is 1.045mV, and the output signal of RTA3 is V out The voltage span is 1.279mV, and the voltage amplification factor of RTA3 is 1.224, indicating that cascading RTA3 at the end of RTO2 can effectively amplify the oscillation signal output by RTO2.

[0064] In summary, this embodiment utilizes the resonant tunneling effect of the RTD to generate the NDC effect, utilizes NDC to realize negative resistance oscillation operating at room temperature, and further realizes a reflective amplifier based on the orthogonal hybrid coupler 11 and the NDC effect, thereby effectively improving the output power of a single integrated radiation source, and has the advantages of miniaturization, high integration, and low power consumption.

[0065] Example 2

[0066] This embodiment proposes a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier. The difference between the structure of the monolithic radiation source and that of the embodiment 1 is that the materials of the first RTD 112, the second RTD 213 and the third RTD 05 are adjusted to be all made of InP material system. The structure is as follows: Figure 10 As shown, the longitudinal section from bottom to top is the emitter (n++In 0.53 Ga 0.47 As), emitter isolation layer (In 0.53 Ga 0.47 As), emitter barrier layer (AlAs), well layer (In 0.8 Ga 0.2 As), collector barrier layer (AlAs), collector isolation layer (In 0.53 Ga 0.47 As) and collector (n++In 0.53 Ga 0.47 As). Other structures and materials remain unchanged.

[0067] Example 3

[0068] This embodiment proposes a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier. The difference between its structure and that of embodiment 1 is that the structure of the on-chip antenna 4 is adjusted as follows: Figure 11 The bow tie antenna shown has a feed line with the left end connected to the sub-port 2_1 16 and the right end connected to the coplanar ground of the bow tie antenna. The antenna has a hollow slot. Other structures and materials remain unchanged.

[0069] Example 4

[0070] This embodiment proposes a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier. The difference between its structure and that of embodiment 2 is that the structure of the on-chip antenna 4 is adjusted as follows: Figure 11 The bow tie antenna shown has a feed line with the left end connected to the sub-port 2_1 16 and the right end connected to the coplanar ground of the bow tie antenna. The antenna has a hollow slot. Other structures and materials remain unchanged.

[0071] The above embodiments only illustrate the principles and advantages of the present invention, and are not intended to limit the present invention. They are only for helping to understand the principles of the present invention. The scope of protection of the present invention is not limited to the above configurations and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the disclosed technology without departing from the essence of the present invention, but they are still within the scope of protection of the present invention.

Claims

1. A monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier, characterized in that: including a substrate, and an RTO, an RTA, and an on-chip antenna located above the substrate; The RTO generates an oscillation signal under a first DC bias and inputs the oscillation signal to the RTA; The RTA includes an RTD die pair and an orthogonal hybrid coupler, the RTD die pair includes a first RTD and a second RTD, and the orthogonal hybrid coupler includes a first port, a second port, a third port, and a fourth port located at the intersection of four corresponding orthogonal arms; wherein the first RTD is connected to the third port, and the second RTD is connected to the fourth port; the oscillation signal generated by the RTO is input from the first port to the RTA, and after reflection amplification, is output from the second port; The RTO includes a stabilizing resistor, a decoupling capacitor, a resonant inductor, a third RTD, and a DC blocking capacitor connected in sequence. By applying a first DC bias to the stabilizing resistor, the RTO generates an oscillation signal, which is output through the DC blocking capacitor; The orthogonal hybrid coupler further includes a first series capacitor, a second series capacitor, a third series capacitor, and a fourth series capacitor located at the intersection of four corresponding orthogonal arms; the first port, the second port, the third port, and the fourth port are each composed of two subports; wherein, one subport 1_1 of the first port is connected to the DC blocking capacitor, and the other subport 1_2 is connected to the first inductor; one subport 2_1 of the second port is connected to the on-chip antenna, and the other subport 2_2 is connected to the second inductor; one subport 3_1 of the third port is connected to the first RTD, and the other subport 3_2 is connected to the second DC bias through the third inductor and the first bypass capacitor; one subport 4_1 of the fourth port is connected to the second RTD, and the other subport 4_2 is connected to the third DC bias through the fourth inductor and the second bypass capacitor; The on-chip antenna is connected to the second port of the RTA to radiate the amplified oscillation signal.

2. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 1, characterized in that: The first RTD, the second RTD and the third RTD adopt the same structure and material system.

3. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 2, characterized in that: The material system of the first RTD, the second RTD and the third RTD is a GaN / AlN material system or an InP / InGaAs / AlAs material system.

4. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 1, wherein: The third DC bias is the same as the second DC bias.

5. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 1, wherein: The resonant inductor is implemented using a coplanar waveguide microstrip line structure with a short-circuited terminal; the first series capacitor, the second series capacitor, the third series capacitor, the fourth series capacitor and the decoupling capacitor are all MIM capacitors; the stabilizing resistor is a thin film resistor; the first inductor, the second inductor, the third inductor and the fourth inductor are implemented using a sub-λ / 4 microstrip stub or a spiral inductor with a short-circuited terminal.

6. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 1, wherein: The on-chip antenna is an on-chip rectangular patch antenna, a bowtie patch antenna, a spiral patch antenna, a slot antenna, an antenna with an integrated micro-resonant cavity or an antenna with an integrated back cavity; and the substrate is GaN or InP.

7. An RTD radiation source array structure, characterized in that: A monolithic radiation source comprising a plurality of integrated resonant tunneling diode oscillators and reflective amplifiers as claimed in claim 1 arranged in an array.

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