Thin film transistor, display panel and display device

Abstract

The invention provides a thin film transistor, a display panel and a display device.The thin film transistor comprises a substrate, an active layer, a barrier layer and a heat conduction layer, the active layer is located on one side of the substrate, at least part of the barrier layer is located between the active layer and the heat conduction layer, and the barrier layer is in direct contact with the active layer; at least a portion of the active layer is in direct contact with the thermally conductive layer. The thin film transistor can relieve the self-heating effect of the thin film transistor.

Description

Technical Field

[0001] The present invention relates to the field of display technologies, and in particular, to a thin film transistor, a display panel, and a display device. Background Art

[0002] A thin film transistor (TFT for short) is a special transistor, which is characterized in that semiconductor materials and other materials are deposited on a substrate using thin layer technology to form a transistor. TFT technology can be applied to display fields such as televisions, computer monitors, mobile phone screens, and other portable electronic devices. With the progress of technology, the demand for miniaturization of display panels is also increasing. Summary of the Invention

[0003] The main object of the present invention is to provide a thin film transistor, a display panel, and a display device to solve the problem of alleviating the self-heating effect of thin film transistors in the prior art.

[0004] To achieve the above object, according to one aspect of the present invention, a thin film transistor is provided, including a substrate, an active layer, a barrier layer, and a heat conduction layer, wherein the active layer is located on one side of the substrate, at least part of the barrier layer is located between the active layer and the heat conduction layer, the barrier layer is in direct contact with the active layer, and at least part of the active layer is in direct contact with the heat conduction layer.

[0005] To achieve the above object, according to one aspect of the present invention, a display device is provided, including any one of the above-mentioned display panels.

[0006] Applying the technical solution of the present invention, a thin film transistor is provided. The thin film transistor is provided with a barrier layer in direct contact with the active layer on one side of the active layer. The barrier layer can block impurities from entering the active layer, thereby effectively protecting the active layer. In addition, at least part of the active layer in the thin film transistor is in contact with the heat conduction layer, so that the heat generated by the current flowing through the channel can be dissipated in time by virtue of the good heat conduction performance of the heat conduction layer, thereby improving the heat conduction performance of the thin film transistor and further alleviating the self-heating effect of the thin film transistor. Brief Description of the Drawings

[0007] The specification drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0008] Figure 1 A schematic structural diagram of a thin film transistor provided according to an embodiment of the present invention is shown;

[0009] Figure 2Shows a schematic structural diagram of another thin-film transistor provided according to an embodiment of the present invention;

[0010] Figure 3 Shows a schematic structural diagram of another thin-film transistor provided according to an embodiment of the present invention;

[0011] Figure 4 Shows a schematic structural diagram of another thin-film transistor provided according to an embodiment of the present invention;

[0012] Figure 5 Shows a schematic structural diagram of yet another thin-film transistor provided according to an embodiment of the present invention;

[0013] Figure 6 Shows a schematic structural diagram of a display device provided according to an embodiment of the present invention.

[0014] Among them, the above-mentioned drawings include the following reference numerals:

[0015] 10. Substrate; 20. Active layer; 201. Second body part; 202. Second protruding part; 30. Barrier layer; 301. Barrier part; 40. Heat-conducting layer; 401. First body part; 402. First protruding part; 50. Source electrode; 60. Drain electrode; 70. Gate electrode; 100. Display panel. Detailed implementation manners

[0016] It should be noted that, without conflict, the embodiments in the present invention and the features in the embodiments may be combined with each other. The present invention will be described in detail below with reference to the drawings and in conjunction with the embodiments.

[0017] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0018] It should be noted that the terms "first", "second", etc. in the description, claims and above-mentioned drawings of the present invention are used to distinguish similar objects and do not necessarily have to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances for the embodiments of the present invention described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0019] According to the different materials of the active layer of thin film transistors, thin film transistors can be divided into metal oxide thin film transistors and low temperature polysilicon transistors. Since the thermal conductivities of the active layer, the insulating layer and the glass substrate of the metal oxide thin film transistor are relatively low, when the device is operating, the heat generated by the current passing through the channel is difficult to be quickly conducted to the surrounding environment, and thus accumulates in the channel region, forming a self-heating effect (also known as self-heating effect).

[0020] As introduced in the background art, self-heating effects are prone to occur in thin film transistors in the prior art. To solve the above technical problems, the present application proposes a thin film transistor, a display panel and a display device.

[0021] Figures 1 to 5 is a schematic structural diagram of a thin film transistor according to an embodiment of the present application. As Figures 1 to 5 shown, it includes: a substrate 10, an active layer 20, a barrier layer 30 and a heat conducting layer 40. Among them, the above-mentioned active layer 20 is located on one side of the above-mentioned substrate 10, and at least part of the above-mentioned barrier layer 30 is located between the above-mentioned active layer 20 and the above-mentioned heat conducting layer 40. That is to say, the heat conducting layer 40 can be located on the side of the active layer 20 close to the substrate 10, or can be located on the side of the active layer 20 away from the substrate 10. The above-mentioned barrier layer 30 is in direct contact with the above-mentioned active layer 20. In the thin film transistor, the barrier layer 30 and the active layer 20 are two adjacent film layers. At least part of the above-mentioned active layer 20 is in direct contact with the above-mentioned heat conducting layer 40. Since the barrier layer 30 is in direct contact with the active layer 20, part of the active layer 20 can pass through part of the barrier layer 30 to contact the heat conducting layer 40, or part of the heat conducting layer 40 can pass through part of the barrier layer 30 to contact the above-mentioned active layer 20.

[0022] Specifically, the material of the above-mentioned active layer can be indium gallium zinc oxide, or can be a metal oxide semiconductor material such as indium gallium selenium oxide. The material of the above-mentioned barrier layer can be selected as an insulating material. The above-mentioned heat conducting layer can be made of a material with good heat conducting performance, that is, a material with a relatively high thermal conductivity.

[0023] In the above embodiments of the present application, a thin-film transistor is provided. A barrier layer in direct contact with the active layer is provided on one side of the active layer. The barrier layer can prevent impurities from entering the active layer, thereby effectively protecting the active layer. In addition, at least a part of the active layer in the thin-film transistor is in contact with the heat-conducting layer. In this way, the heat generated when the current flows through the channel can be dissipated in time by virtue of the good heat-conducting performance of the heat-conducting layer, thereby improving the heat-conducting performance of the thin-film transistor and further alleviating the self-heating effect of the thin-film transistor.

[0024] In some specific embodiments, the material of the above heat-conducting layer includes silicon nitride. The selection of the material of the heat-conducting layer can further improve the heat-conducting performance of the heat-conducting layer, thereby further improving the performance of the thin-film transistor.

[0025] In practical applications, the silicon nitride thin film is prepared by the Plasma Enhanced Chemical Vapor Deposition (PECVD) process. In this process, silane (SiH4) and ammonia (NH2) are used as reaction gases. Due to incomplete reaction or improper control of process parameters, hydrogen atoms will remain in the thin film, forming a so-called "hydrogen-rich" state. In addition, hydrogen can combine with dangling bonds in the silicon nitride thin film to passivate defects. This characteristic makes hydrogen have a certain stability in the thin film, further increasing the hydrogen content in the silicon nitride thin film. Therefore, due to the influence of the preparation process and passivation effect, the silicon nitride material is a hydrogen-rich insulating layer. However, the presence of hydrogen will have an adverse effect on the electrical properties of the active layer (IGZO). Since the hydrogen ion (H + ) has a high diffusion ability and is easy to migrate in the thin film. When hydrogen diffuses into the active layer (IGZO), it will combine with oxygen atoms to form water molecules (H2O), resulting in the generation of oxygen vacancies. Oxygen vacancies will introduce additional carriers and change the electrical characteristics of the IGZO thin film, such as the threshold voltage and mobility. In addition, the presence of hydrogen will also increase the interface state density between silicon nitride and IGZO. These interface states will capture carriers and reduce the carrier mobility, thereby affecting the switching characteristics and stability of the IGZO thin-film transistor. Therefore, the partial contact between the heat-conducting layer of the silicon nitride material and the active layer can not only alleviate the self-heating effect but also reduce the influence of silicon nitride on the performance of the active layer IGZO.

[0026] In some other specific embodiments, the material of the above barrier layer includes silicon oxide. The selection of the material of the barrier layer can further improve the protection effect of the barrier layer on the active layer, thereby further improving the performance of the thin-film transistor.

[0027] Specifically, during the preparation and use of thin-film transistors, the active layer is prone to performance degradation due to the formation of oxygen vacancies. Oxygen vacancies may introduce additional carriers, affecting the electrical characteristics of the device, such as threshold voltage drift and mobility decline. Silicon oxide material is an oxygen-rich insulating layer, which can compensate for oxygen vacancies in the active layer by providing additional oxygen atoms, thereby reducing the formation of oxygen vacancies and lowering the defect state density. Moreover, silicon oxide can also improve the interface quality between the active layer and the barrier layer. Since defect states such as oxygen vacancies and dangling bonds at the interface can trap carriers, leading to unstable device performance, silicon oxide fills these defect states, reducing the density of interface states, thereby improving the stability and reliability of the device. In addition, silicon oxide can also optimize its electrical characteristics by adjusting the oxygen concentration in the active layer. For example, through the adjustment of silicon oxide, a vertical gradient of oxygen distribution can be formed in the active layer, thereby improving the carrier concentration distribution and enhancing the mobility and switching characteristics.

[0028] To further enhance the effect of the heat conduction layer in alleviating the self-heating effect, thereby further improving the performance of thin-film transistors, such as Figures 1 to 5 As shown, the above-mentioned barrier layer 30 is located on the side of the above-mentioned active layer 20 away from the above-mentioned substrate 10. That is to say, the substrate 10, the active layer 20, the barrier layer 30, and the heat conduction layer 40 are stacked in sequence from bottom to top. The material of the above-mentioned barrier layer 30 is different from the material of the above-mentioned heat conduction layer 40. Specifically, the material of the above-mentioned barrier layer 30 can be selected as an insulating material such as silicon oxide, and the above-mentioned heat conduction layer 40 can be selected as an insulating material with good heat conduction performance, and the heat conduction performance of the heat conduction layer 40 is greater than that of the barrier layer 30.

[0029] In some other embodiments, as Figures 1 to 3 As shown, in addition to being located on the side of the above-mentioned active layer 20 away from the above-mentioned substrate 10, on the other side of the active layer 20, the thin-film transistor further includes another barrier layer 30, which is located between the active layer 20 and the heat conduction layer 40. That is to say, the barrier layer 30 can block external impurities from both sides of the active layer, thereby realizing the protection of the active layer. In addition, a heat conduction layer 40 is located on the side of the above-mentioned active layer 20 close to the substrate 10. That is to say, this heat conduction layer 40 is located between the substrate 10 and the barrier layer 30. Another heat conduction layer 40 is located on the side of the above-mentioned active layer 20 away from the above-mentioned substrate 10.

[0030] As Figure 2As shown, the above-mentioned heat-conducting layer 40 includes a first body portion 401 and at least one first protruding portion 402. That is to say, the first body portion 401 and the first protruding portion 402 are in a "T" shape structure, and the above-mentioned first protruding portion 402 can be one or multiple. The above-mentioned first body portion 401 is located on the side of each of the above-mentioned first protruding portions 402 away from the above-mentioned active layer 20. The above-mentioned first protruding portion 402 protrudes towards the direction close to the substrate 10. One end of the above-mentioned first protruding portion 402 is in contact with the above-mentioned first body portion 401, and the other end is in contact with the above-mentioned active layer 20. The heat-conducting layer 40 is in contact with the active layer 20 through the first protruding portion 402. Dividing the above-mentioned heat-conducting layer 40 into two parts, namely the first body portion 401 and the first protruding portion 402, can optimize the heat conduction path of the heat-conducting layer 40, further improve the heat conduction performance of the heat-conducting layer, increase the heat conduction efficiency, and thus further improve the performance of the thin-film transistor.

[0031] In practical applications, the materials of the above-mentioned first body portion and the first protruding portion can be the same or different. In a specific embodiment, in order to further improve the effect of the heat-conducting layer in alleviating the self-heating effect while reducing costs, the heat conduction performance of the material of the above-mentioned first protruding portion can be greater than that of the material of the first body portion, or the heat dissipation performance of the material of the above-mentioned first body portion can be greater than that of the material of the above-mentioned first protruding portion.

[0032] In some embodiments, as Figure 2 shown, the above-mentioned barrier layer 30 includes a plurality of barrier portions 301 arranged at intervals. There is an interval between two adjacent above-mentioned barrier portions 301, and the widths of the plurality of intervals can be the same or different. The above-mentioned first protruding portion 402 is located in the above-mentioned interval between two adjacent above-mentioned barrier portions 301. That is to say, the first protruding portion 402 extends towards the direction of the substrate 10 through the above-mentioned interval and is in contact with the active layer 20. The above-mentioned barrier layer 30 includes a plurality of barrier portions 301 arranged at intervals, and the first protruding portion 402 can be further arranged in the interval, which can further take into account the function of the above-mentioned barrier layer 30 in blocking impurities and the heat conduction effect of the heat-conducting layer 40.

[0033] In practical applications, the above-mentioned barrier portion can be a single-layer structure or a multi-layer structure.

[0034] In other embodiments, as Figures 1 to 5As shown, the above thin-film transistor further includes a source electrode 50 and a drain electrode 60. The source electrode 50 can be an electrode through which current flows into the thin-film transistor. In a display panel, the source electrode 50 can be connected to a data driving circuit to receive an external input signal. In addition, the functions of the source electrode 50 and the drain electrode 60 can be interchanged. However, in practical applications, the source electrode 50 is often defined as the input terminal of current or signal. When the gate voltage reaches the threshold value, a conductive channel is formed between the source electrode 50 and the drain electrode 60, allowing current to pass through. By changing the gate voltage, the magnitude of the current between the source electrode 50 and the drain electrode 60 can be adjusted, thereby achieving the control of the pixel brightness. The current flow between the source electrode 50 and the drain electrode 60 is controlled by the gate voltage. The thin-film transistor can act as a switch to control the on and off of the current. The above source electrode 50 and the above drain electrode 60 are respectively located on the side of the above active layer 20 away from the above substrate 10. In practical applications, the positions of the above source electrode 50 and the drain electrode 60 can be exchanged. For example: the positions of the above source electrode 50 and the drain electrode 60 can be as Figures 1 to 3 shown, the source electrode 50 is arranged on the left side and the drain electrode 60 is arranged on the right side. It is also possible that the source electrode 50 is arranged on the right side and the drain electrode 60 is arranged on the left side. As Figures 1 to 3 shown, at least part of the above source electrode 50 and at least part of the above drain electrode 60 are respectively located in the above interval between two adjacent above blocking parts 301. In a predetermined direction, at least part of the surface of at least one side of the above source electrode 50 is in contact with the above heat conduction layer 40, and at least part of the surface of at least one side of the above drain electrode 60 is in contact with the above heat conduction layer 40. When the gate voltage reaches the threshold value, a conductive channel will be formed in the active layer 20, enabling current to flow from the source electrode 50 through the active layer 20 to the drain electrode 60. Among them, the above predetermined direction is perpendicular to the direction of the thickness of the above thin-film transistor. The at least part of the surface of at least one side of the above source electrode 50 and the above drain electrode 60 being in contact with the above heat conduction layer 40 can further alleviate the heat accumulation caused by the self-heating effect of the source electrode 50 and the drain electrode 60, and further improve the overall performance of the thin-film transistor.

[0035] Specifically, as Figure 1 and Figure 2 shown, in a predetermined direction, at least part of the surface of one side of the above source electrode 50 is in contact with the above heat conduction layer 40, and at least part of the surface of one side of the above drain electrode 60 is in contact with the above heat conduction layer 40. As Figure 3 shown, in a predetermined direction, at least part of the surfaces of both sides of the above source electrode 50 are respectively in contact with the above heat conduction layer 40, and at least part of the surfaces of both sides of the above drain electrode 60 are respectively in contact with the above heat conduction layer 40. Compared with the above source electrode 50 and drain electrode 60 in Figure 1 and Figure 2 , the source electrode 50 and the drain electrode 60 in Figure 3 have a larger contact area with the heat conduction layer, which can further improve the heat conduction efficiency of the heat conduction layer.

[0036] In some embodiments, as Figure 2 shown, at least part of the interval where the above-mentioned source is located is the first interval, and at least part of the interval where the above-mentioned drain is located is the second interval. The width of the first interval in the above-mentioned predetermined direction is the first width w1, and the width of the second interval in the above-mentioned predetermined direction is the second width w2. The first width w1 is less than the second width w2, that is, the width of the interval corresponding to the source is less than the width of the interval corresponding to the drain. By increasing the width of the drain contact area, the contact area between the drain and the heat-conducting layer can be increased, while reducing the electric field concentration at the drain, and further enhancing the heat dissipation ability of the drain, thereby further improving the stability of the thin-film transistor.

[0037] Specifically, during the actual operation of the thin-film transistor, the drain bears a relatively high voltage. Especially when the thin-film transistor is in the on state, the drain voltage may be close to the power supply voltage. Due to the relatively high drain voltage, the electric field intensity near the drain is also relatively large. If the width of the drain contact area is relatively narrow, the electric field will be more concentrated, which may lead to an increase in leakage current and hot carrier effects caused by an overly strong electric field, thereby affecting the stability and lifespan of the thin-film transistor.

[0038] In other embodiments, the above-mentioned barrier layer is located between the above-mentioned active layer and the above-mentioned substrate. That is to say, the substrate, the heat-conducting layer, the barrier layer, and the active layer are stacked in sequence from bottom to top. The material of the above-mentioned barrier layer is different from the material of the above-mentioned heat-conducting layer. Specifically, the material of the above-mentioned barrier layer can be selected as an insulating material such as silicon oxide, and the above-mentioned heat-conducting layer can be selected as an insulating material with good heat-conducting performance. Moreover, the heat-conducting performance of the heat-conducting layer is greater than that of the barrier layer.

[0039] Specifically, as Figure 4 and Figure 5 shown, in addition to being located on the side of the above-mentioned active layer 20 away from the above-mentioned substrate 10, on the other side of the active layer 20, the thin-film transistor further includes another barrier layer 30, and this barrier layer 30 is located between the active layer 20 and the heat-conducting layer 40. That is to say, the barrier layer 30 can block external impurities from both sides of the active layer, thereby protecting the active layer. In addition, a heat-conducting layer 40 is located on the side of the above-mentioned active layer 20 close to the substrate 10, that is to say, this heat-conducting layer 40 is located between the substrate 10 and the barrier layer 30. Another heat-conducting layer 40 is located on the side of the above-mentioned active layer 20 away from the above-mentioned substrate 10.

[0040] In still other embodiments, as Figure 5As shown, the above-mentioned active layer 20 includes a second body portion 201 and a second protruding portion 202. That is to say, the second body portion 201 and the second protruding portion 202 are in a "T" - shaped structure. The above - mentioned second body portion 201 is located on the side of the second protruding portion 202 away from the substrate 10. The second protruding portion 202 protrudes in the direction close to the substrate 10. One end of the second protruding portion 202 is in contact with the second body portion 201, and the other end of the second protruding portion 202 is in contact with the heat - conducting layer 40. The active layer 20 is in contact with the heat - conducting layer 40 through the second protruding portion 202. Dividing the active layer 20 into two parts, namely the second body portion 201 and the second protruding portion 202, can optimize the heat - conduction path of the active layer 20, further improve the heat - conduction performance of the heat - conducting layer 40, and increase the heat - conduction efficiency.

[0041] In practical applications, the material of the heat - conducting layer in contact with the second body portion and the material of the heat - conducting layer in contact with the second protruding portion can be the same or different.

[0042] In some other embodiments, as Figures 1 to 5 shown, the above - mentioned thin - film transistor further includes a gate 70, and the gate 70 is located between the active layer 20 and the heat - conducting layer 40. The above - mentioned setting can further achieve effective heat dissipation of the gate 70 in the thin - film transistor.

[0043] Specifically, the above - mentioned thin - film transistor can be a top - gate structure, a bottom - gate structure or a double - gate structure. Among them, the top - gate structure means that the gate is located on the side of the active layer away from the substrate. The bottom - gate structure means that the gate is located on the side of the active layer close to the substrate. The double - gate structure means that the thin - film transistor includes two gates, one gate is located on the side of the active layer away from the substrate, and the other gate is located on the side of the active layer close to the substrate. In practical applications, thin - film transistors with top - gate, bottom - gate and double - gate structures each have their own advantages. The top - gate structure can achieve self - alignment through the gate electrode as a mask, reduce parasitic capacitance, and improve the switching response speed. And it has high compatibility with existing semiconductor processes and is suitable for various material systems. The gate of the bottom - gate structure is located below the active layer, which can effectively block the light of the backlight and avoid the influence of photo - generated carriers on the device performance. And in some material systems, the bottom - gate structure can achieve a relatively high carrier mobility. The double - gate structure controls the channel through two gates at the same time, which can further improve the current - driving ability, effectively reduce the leakage current, improve the sub - threshold characteristics, and can effectively suppress the short - channel effect, improving the stability of the device.

[0044] In some other embodiments, as Figure 5As shown, the overlapping part of the projection of the above-mentioned active layer 20 on the above-mentioned substrate 10 and the projection of the above-mentioned gate 70 on the above-mentioned substrate 10 is the first projection. The overlapping part of the active layer 20 and the gate 70 forms a channel region. The projection of the above-mentioned second protrusion 202 on the above-mentioned substrate 10 is the second projection. The width of the above-mentioned first projection in a predetermined direction is the third width w3, and the width of the above-mentioned second projection in the above-mentioned predetermined direction is the fourth width w4. The ratio of the above-mentioned fourth width w4 to the above-mentioned third width w3 is less than 0.2. Herein, the above-mentioned predetermined direction is perpendicular to the direction of the thickness of the above-mentioned thin-film transistor. Such a ratio setting can reduce the overlapping area between the active layer 20 and the gate 70, further effectively control the channel length, and thus optimize the switching characteristics of the thin-film transistor. A smaller contact region width helps to achieve a shorter actual channel length, thereby further improving the conductivity of the device and reducing the leakage current.

[0045] In another typical embodiment of the present application, a display panel including any one of the above-mentioned thin-film transistors is provided.

[0046] Specifically, the above-mentioned display panel can be one of a liquid crystal display panel (abbreviated as LCD), Mini-LED, Micro-LED, quantum dot liquid crystal display (abbreviated as QD-LCD), and organic light-emitting diode display (abbreviated as OLED).

[0047] In still another typical embodiment of the present application, as Figure 6 shown, a display device including any one of the above-mentioned display panels 100 is provided.

[0048] Specifically, the above-mentioned display device can be one of a mobile phone, a desktop computer, a tablet computer, a laptop computer, and a wearable device.

[0049] From the above description, it can be seen that the above-mentioned embodiments of the present invention achieve the following technical effects:

[0050] (1) For the thin-film transistor of the present application, a barrier layer in direct contact with the active layer is provided on one side of the active layer. The barrier layer can prevent impurities from entering the active layer, thereby effectively protecting the active layer. In addition, at least part of the active layer in the thin-film transistor is in contact with the heat-conducting layer. In this way, the heat generated by the current flowing through the channel can be dissipated in time by virtue of the good heat-conducting performance of the heat-conducting layer, thereby improving the heat-conducting performance of the thin-film transistor and alleviating the self-heating effect of the thin-film transistor.

[0051] (2) The display panel of the present application includes the above-mentioned thin film transistor. The thin film transistor is provided with a barrier layer in direct contact with one side of the active layer. The barrier layer can prevent impurities from entering the active layer, thereby effectively protecting the active layer. In addition, at least part of the active layer in the thin film transistor is in contact with the heat conduction layer. In this way, by virtue of the good heat conduction performance of the heat conduction layer, the heat generated when the current flows through the channel can be dissipated in time, thereby improving the heat conduction performance of the thin film transistor and further alleviating the self-heating effect of the thin film transistor.

[0052] (3) The display device of the present application includes the above-mentioned display panel. The display panel includes the above-mentioned thin film transistor. The thin film transistor is provided with a barrier layer in direct contact with one side of the active layer. The barrier layer can prevent impurities from entering the active layer, thereby effectively protecting the active layer. In addition, at least part of the active layer in the thin film transistor is in contact with the heat conduction layer. In this way, by virtue of the good heat conduction performance of the heat conduction layer, the heat generated when the current flows through the channel can be dissipated in time, thereby improving the heat conduction performance of the thin film transistor and further alleviating the self-heating effect of the thin film transistor.

[0053] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A thin film transistor, characterized in that: The invention comprises a substrate, an active layer, a barrier layer and a heat-conducting layer, wherein the active layer is located on one side of the substrate, at least part of the barrier layer is located between the active layer and the heat-conducting layer, the barrier layer is in direct contact with the active layer, and at least part of the active layer is in direct contact with the heat-conducting layer.

2. The thin film transistor according to claim 1, characterized in that: The material of the heat conducting layer includes silicon nitride.

3. The thin film transistor according to claim 1, characterized in that: The material of the barrier layer includes silicon oxide.

4. The thin film transistor according to claim 1, characterized in that: The barrier layer is located on a side of the active layer away from the substrate, and the material of the barrier layer is different from that of the heat conducting layer.

5. The thin film transistor according to claim 4, characterized in that: The thermal conductive layer includes a first main body and at least one first protrusion, the first main body is located on a side of each of the first protrusions away from the active layer, the first protrusion protrudes toward the direction close to the substrate, one end of the first protrusion contacts the first main body, and the other end contacts the active layer.

6. The thin film transistor according to claim 5, characterized in that: The barrier layer includes a plurality of barrier portions that are spaced apart from each other, and the first protrusion is located in the space between two adjacent barrier portions.

7. The thin film transistor according to claim 6, characterized in that: The thin film transistor also includes a source and a drain, the source and the drain are respectively located on a side of the active layer away from the substrate, and at least part of the source and at least part of the drain are respectively located in the gap between two adjacent blocking portions, in a predetermined direction, at least part of the surface of at least one side of the source is in contact with the heat conductive layer, and at least part of the surface of at least one side of the drain is in contact with the heat conductive layer, wherein the predetermined direction is perpendicular to the thickness direction of the thin film transistor.

8. The thin film transistor according to claim 7, characterized in that: The interval where at least part of the source is located is a first interval, and the interval where at least part of the drain is located is a second interval. The width of the first interval in the predetermined direction is a first width, and the width of the second interval in the predetermined direction is a second width, and the first width is smaller than the second width.

9. The thin film transistor according to claim 1, characterized in that: The barrier layer is located between the active layer and the substrate, and the material of the barrier layer is different from that of the heat conducting layer.

10. The thin film transistor according to claim 9, characterized in that: The active layer includes a second main body portion and a second protrusion portion, the second main body portion is located on a side of the second protrusion portion away from the base substrate, the second protrusion portion protrudes toward the base substrate, one end of the second protrusion portion contacts the second main body portion, and the other end of the second protrusion contacts the heat conductive layer.

11. The thin film transistor according to claim 10, characterized in that: The thin film transistor further includes a gate, and the gate is located between the active layer and the heat conductive layer.

12. The thin film transistor according to claim 11, characterized in that: The overlapping portion of the projection of the active layer on the base substrate and the projection of the gate on the base substrate is a first projection, the projection of the second protrusion on the base substrate is a second projection, the width of the first projection in a predetermined direction is a third width, the width of the second projection in the predetermined direction is a fourth width, and the ratio of the fourth width to the third width is less than 0.2, wherein the predetermined direction is perpendicular to the direction of the thickness of the thin film transistor.

13. A display panel, characterized in that: A thin film transistor comprising the thin film transistor according to any one of claims 1 to 12.

14. A display device, characterized in that: Includes the display panel as claimed in claim 13.

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