Light emitting element, display device including same, and method of manufacturing light emitting element

Abstract

The invention relates to a light-emitting element, a display device, and a method of manufacturing the light-emitting element. A light-emitting element according to an embodiment includes semiconductor layers including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light emitting element further includes: a multiple insulating film including a first insulating film, a second insulating film, and a third insulating film sequentially surrounding a side surface of the semiconductor layer; a low refractive index film surrounding the multiple insulating film and having a thickness greater than a thickness of the multiple insulating film; and a reflective film surrounding the low refractive index film and including a metal.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 0 - 2023 - 0192189, filed with the Korean Intellectual Property Office on December 27, 2023, the entire content of which is incorporated herein by reference. Technical Field

[0003] Embodiments of the present disclosure relate to a light - emitting element, a display device including the light - emitting element, and a method of manufacturing the light - emitting element. Background Art

[0004] Light - emitting elements are widely used as light sources in various electronic devices, including display devices. As an example, light - emitting elements are used as light sources in various electronic devices, including portable electronic devices (such as smart phones and smart watches), televisions, and virtual reality devices and augmented reality devices. Summary of the Invention

[0005] Aspects of the present disclosure provide a light - emitting element having improved reliability and luminous efficiency, a display device including the light - emitting element, and a method of manufacturing the light - emitting element.

[0006] However, aspects of the present disclosure are not limited to those set forth herein. The above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0007] According to an aspect of the present disclosure, there is provided a light - emitting element, which may include: a semiconductor layer including a first semiconductor layer, a light - emitting layer, and a second semiconductor layer; a multi - layer insulating film including a first insulating film, a second insulating film, and a third insulating film sequentially surrounding a side surface of the semiconductor layer; a low - refractive - index film surrounding the multi - layer insulating film and having a thickness greater than that of the multi - layer insulating film; and a reflective film surrounding the low - refractive - index film and including a metal.

[0008] In an embodiment, the first insulating film may include a material having a dissociation energy in the range of about 7 eV to about 9 eV.

[0009] In an embodiment, the first insulating film may include at least one of ZrO2, SiO2, HfO2, Ta2O5, and La2O3.

[0010] In an embodiment, each of the first insulating film and the third insulating film may include at least one of ZrO2 and HfO2, and the second insulating film may include at least one of Al2O3 and SiO2.

[0011] In an embodiment, the first insulating film, the second insulating film, and the third insulating film may include M1O2-type oxides, M22O3-type oxides, and M3O2-type oxides, respectively, and M1 may be a metal material, M2 may be a metal material, and M3 may be a metal material.

[0012] In an embodiment, each of the first insulating film and the third insulating film may include at least one of ZrO2, SiO2, HfO2, GeO2, TiO2, and TeO2, and the second insulating film may include at least one of Al2O3, Y2O3, La2O3, Ce2O3, Lu2O3, Sc2O3, and Yb2O3.

[0013] In an embodiment, each of the first insulating film, the second insulating film, and the third insulating film may have a thickness in the range of about 0.5 nm to about 5 nm.

[0014] In an embodiment, the sum of the thickness of the first insulating film, the thickness of the second insulating film, and the thickness of the third insulating film may be about 10 nm or less.

[0015] In an embodiment, the multi-layer insulating film and the low-refractive-index film may form a multi-layer composite film between the semiconductor layer and the reflective film, and the thickness of the multi-layer composite film satisfies the range of Equation 1:

[0016] [Equation 1]

[0017]

[0018] In Equation 1, t may be the thickness of the multi-layer composite film, λ may be the emission wavelength of the light-emitting layer, and n may be the composite refractive index of the multi-layer composite film.

[0019] In an embodiment, the low-refractive-index film may include SiO2.

[0020] In an embodiment, the reflective film may include at least one of aluminum (Al), molybdenum (Mo), titanium (Ti), copper (Cu), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), and chromium (Cr).

[0021] In an embodiment, the reflective film may have a thickness in the range of about 30 nm to about 200 nm.

[0022] In an embodiment, the semiconductor layer may have a width in the range of about 0.5 μm to about 10 μm.

[0023] In an embodiment, the light-emitting element may further include a protective film surrounding the reflective film.

[0024] In an embodiment, the light-emitting element may further include a contact electrode provided on the semiconductor layer, and the multilayer insulating film, the low-refractive-index film, the reflective film, and the protective film may further surround a side surface of the contact electrode.

[0025] In an embodiment, a side surface of the semiconductor layer may have an inclined surface that is inclined with respect to a first bottom surface of the semiconductor layer.

[0026] According to an aspect of the present disclosure, a display device is provided. The display device may include a first electrode, a second electrode, and a light-emitting element electrically connected between the first electrode and the second electrode. The light-emitting element may include: a semiconductor layer including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light-emitting element may further include: a multilayer insulating film including a first insulating film, a second insulating film, and a third insulating film that sequentially surround a side surface of the semiconductor layer; a low-refractive-index film surrounding the multilayer insulating film and having a thickness greater than that of the multilayer insulating film; and a reflective film surrounding the low-refractive-index film and including a metal.

[0027] In an embodiment, the light-emitting element may further include a protective film surrounding the reflective film.

[0028] According to an aspect of the present disclosure, a method of manufacturing a light-emitting element is provided. The method may include: sequentially forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a substrate; etching the first semiconductor layer, the light-emitting layer, and the second semiconductor layer; sequentially forming a multilayer insulating film including a first insulating film, a second insulating film, and a third insulating film, a low-refractive-index film having a thickness greater than that of the multilayer insulating film, and a reflective film including a metal on the substrate, the first semiconductor layer, the light-emitting layer, and the second semiconductor layer; and forming a multilayer film surrounding side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer by etching the multilayer insulating film, the low-refractive-index film, and the reflective film.

[0029] In an embodiment, the method may further include forming a protective film on the reflective film before etching the multilayer insulating film, the low-refractive-index film, and the reflective film, and the multilayer film may be formed of at least six films including the multilayer insulating film, the low-refractive-index film, the reflective film, and the protective film.

[0030] A light-emitting element according to an embodiment may include: a semiconductor layer including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a multilayer insulating film including a first insulating film, a second insulating film, and a third insulating film that sequentially surround the semiconductor layer; a low-refractive-index film; and a reflective film. In some embodiments, the light-emitting element may further include a protective film surrounding the reflective film. According to the light-emitting element and the method of manufacturing the light-emitting element according to some embodiments, in addition to improving the reliability of the light-emitting element, the light-emitting efficiency of the light-emitting element can also be improved.

[0031] The display device according to an embodiment may include a light-emitting element. Accordingly, the light efficiency of the display device may be improved.

[0032] However, the effects according to the embodiments of the present disclosure are not limited to the above-mentioned effects, and various other effects are included herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The above and other aspects and features of the present disclosure will become more apparent by referring to the embodiments of the present disclosure described in detail with reference to the accompanying drawings, in which:

[0034] Figure 1 is a schematic cross-sectional view showing a light-emitting element according to an embodiment;

[0035] Figure 2 is a schematic cross-sectional view showing a light-emitting element according to an embodiment;

[0036] Figure 3 is a schematic plan view showing a light-emitting element according to an embodiment;

[0037] Figure 4 is a schematic plan view showing a light-emitting element according to an embodiment;

[0038] Figure 5 is Figure 1 an enlarged schematic cross-sectional view of region A1 of

[0039] Figure 6 is a schematic cross-sectional view showing a light-emitting element according to an embodiment;

[0040] Figures 7 to 13 is a schematic cross-sectional view showing a method of manufacturing a light-emitting element according to an embodiment;

[0041] Figure 14 is a schematic perspective view showing a display device according to an embodiment;

[0042] Figure 15 is a schematic perspective view showing a display device according to an embodiment;

[0043] Figure 16 is a schematic plan view showing a display area according to an embodiment;

[0044] Figure 17 is a schematic cross-sectional view showing a display panel according to an embodiment;

[0045] Figure 18 is a schematic cross-sectional view showing a display panel according to an embodiment;

[0046] Figure 19 is a schematic cross-sectional view showing a display panel according to an embodiment;

[0047] Figure 20 is a schematic cross-sectional view showing a display panel according to an embodiment;

[0048] Figure 21 is a schematic view showing a virtual reality device including a display device according to an embodiment;

[0049] Figure 22 is a schematic view showing a smart device including a display device according to an embodiment;

[0050] Figure 23 is a schematic view showing an instrument panel and a center instrument panel of a vehicle including a display device according to an embodiment; and

[0051] Figure 24 is a schematic view showing a transparent display device including a display device according to an embodiment. Detailed Embodiments

[0052] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments are shown. However, the present disclosure may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0053] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0054] In the specification and claims, for purposes of their meaning and interpretation, the term "and / or" is intended to include any combination of the terms "and" and "or". For example, "A and / or B" can be understood to mean "A, B, or A and B". The terms "and" and "or" can be used in a conjunctive or disjunctive sense and can be understood to be equivalent to "and / or".

[0055] In the specification and claims, for purposes of their meaning and interpretation, the phrase "at least one of..." is intended to include the meaning of "at least one selected from the group of...". For example, "at least one of A and B" can be understood to mean "A, B, or A and B".

[0056] It will also be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer, or an intervening layer may also be present. Throughout the specification, like reference numerals refer to like components.

[0057] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0058] The features of each of the various embodiments of the present disclosure may be partially or completely combined with each other, and may cooperate with each other technically differently, and the various embodiments may be implemented independently of each other, or may be implemented in association with each other.

[0059] In view of the measurements discussed and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system), as used herein, "about" or "approximate" or "substantially" includes the stated value and means within an acceptable deviation range of the particular value determined by a person of ordinary skill in the art. For example, "about" may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0060] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by a person of ordinary skill in the art to which this disclosure pertains. It will also be understood that terms (such as those defined in a common dictionary) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0061] Figure 1 is a schematic cross-sectional view showing a light-emitting element LE according to an embodiment. Figure 2 is a schematic cross-sectional view showing a light-emitting element LE according to an embodiment. For example, Figure 1 only shows the light-emitting element LE, and Figure 2 shows a state in which Figure 1 the light-emitting element LE is disposed on the substrate SUB.

[0062] Figure 3 is a schematic plan view showing a light-emitting element LE according to an embodiment. Figure 4 is a schematic plan view showing a light-emitting element LE according to an embodiment. For example, Figure 3 and Figure 4 show different examples of Figure 1 and Figure 2 the shape of the light-emitting element LE.

[0063] Refer to Figures 1 to 4, the light-emitting element LE can be disposed separately from the substrate SUB, or can be disposed on the substrate SUB. In an embodiment, the light-emitting element LE can be formed on a buffer layer BFL on the substrate SUB and separated from the substrate SUB. Figure 2 Only one light-emitting element LE is shown disposed on the substrate SUB in Figure 2 , but the embodiment is not limited thereto. For example, a plurality of light-emitting elements LE can be disposed on the substrate SUB.

[0064] In Figures 1 to 4 , a first direction DR1, a second direction DR2, and a third direction DR3 that are perpendicular to each other are shown. As an example, the first direction DR1 and the second direction DR2 can be perpendicular to each other and can define a plane parallel to the first bottom surface S1 of the light-emitting element LE or the main surface of the substrate SUB. The third direction DR3 can be a direction perpendicular to the first direction DR1 and the second direction DR2. As an example, the third direction DR3 can be a direction perpendicular to the main surface of the substrate SUB and can be the height direction or the thickness direction of the substrate SUB or the light-emitting element LE. For example, the buffer layer BFL and the light-emitting element LE can be sequentially disposed on the substrate SUB along the third direction DR3.

[0065] Depending on the embodiment, the light-emitting element LE can have various shapes. In an embodiment, the light-emitting element LE can include a first bottom surface S1 and side surfaces that are substantially perpendicular to the main surface of the substrate SUB. As an example, the light-emitting element LE can have a substantially rectangular or square shape in a plane defined by the first direction DR1 and the third direction DR3. However, the shape of the light-emitting element LE is not limited thereto. As an example, the light-emitting element LE can also have side surfaces at least a part of which is inclined in a diagonal direction with respect to the first bottom surface S1 or includes stepped steps.

[0066] In an embodiment, as shown in Figure 3 and Figure 4 , the light-emitting element LE can have a circular shape or a square shape in a plan view, but is not limited thereto. As an example, the light-emitting element LE can also have a non-quadrilateral polygon shape, an elliptical shape, or other planar shapes.

[0067] In an embodiment, the light-emitting element LE may be an inorganic light-emitting element formed of an inorganic material. For example, the light-emitting element LE may be an inorganic light-emitting diode formed of a nitride-based semiconductor material (e.g., GaN, AlGaN, GaAlN, InGaN, AlInGaN, AlN, InN, or other nitride-based semiconductor materials), a phosphide-based semiconductor material (e.g., GaP, GaInP, AlGaP, AlInP, AlGaInP, AlP, InP, or other phosphide-based semiconductor materials), or other inorganic materials. The light-emitting element LE may emit light of a specific color. As an example, the light-emitting element LE may emit red light, green light, blue light, or light of another color. The material forming the light-emitting element LE or the color of the light emitted from the light-emitting element LE may vary according to the embodiment.

[0068] In an embodiment, the light-emitting element LE may be a micro light-emitting diode (LED) having a small size in the range of micrometers (μm). For example, the light-emitting element LE may be a micro-LED, each having a length (e.g., a horizontal length or width) in a first direction DR1 of several micrometers to several hundred micrometers, a length in a second direction DR2 (e.g., a vertical length), and a length in a third direction DR3 (e.g., a thickness or height). In an embodiment, the length of the light-emitting element LE in the first direction DR1, the length of the light-emitting element LE in the second direction DR2, and the length of the light-emitting element LE in the third direction DR3 may each be about 100 μm or less, but is not limited thereto.

[0069] The light-emitting element LE may include a semiconductor layer EPI and a multilayer film MLF surrounding the semiconductor layer EPI. The multilayer film MLF may surround the side surface of the semiconductor layer EPI. In an embodiment, the light-emitting element LE may further include a contact electrode CTE disposed on the semiconductor layer EPI. The multilayer film MLF may at least partially surround the side surface of the contact electrode CTE, or may not surround the side surface of the contact electrode CTE. As an example, the multilayer film MLF may further surround the side surface of the contact electrode CTE and the side surface of the semiconductor layer EPI.

[0070] In an embodiment, the light-emitting element LE may have a column shape such as a cylinder or a square column, and may include a first bottom surface S1 and a second bottom surface S2. In an embodiment, the first semiconductor layer SCL1 of the semiconductor layer EPI may be located on the first bottom surface S1, and the contact electrode CTE may be located on the second bottom surface S2.

[0071] In an embodiment, the light-emitting element LE may be arranged such that the first bottom surface S1 faces downward and the second bottom surface S2 faces upward. As an example, the light-emitting element LE may be arranged or formed on the substrate SUB such that its first bottom surface S1 faces the substrate SUB. In an embodiment, the light-emitting element LE may be separated from the substrate SUB and arranged on a transfer substrate or a target substrate, etc., and the arrangement direction of the light-emitting element LE may vary according to the embodiment. As an example, the light-emitting element LE may be arranged on the transfer substrate or the target substrate such that the first bottom surface S1 faces upward and the second bottom surface S2 faces downward. In other embodiments, the light-emitting element LE may be arranged on the transfer substrate or the target substrate such that the first bottom surface S1 faces downward and the second bottom surface S2 faces upward.

[0072] The substrate SUB may be a semiconductor substrate for manufacturing the light-emitting element LE. The substrate SUB may be a manufacturing substrate or a wafer suitable for epitaxial growth. For example, the semiconductor layer EPI of the light-emitting element LE may be formed on the substrate SUB by epitaxial growth.

[0073] In an embodiment, the substrate SUB may be a substrate including a material such as GaAs, silicon (Si), sapphire, SiC, GaN, or ZnO. As an example, the substrate SUB may be a silicon substrate or a sapphire substrate. When epitaxial growth for manufacturing the light-emitting element LE can be smoothly performed, the type or material of the substrate SUB is not particularly limited. In an embodiment, the substrate SUB may be used as a substrate for epitaxial growth, which is used for manufacturing the light-emitting element LE and is finally separated from the light-emitting element LE. As an example, after forming a plurality of light-emitting elements LE on the substrate SUB by epitaxial growth at the same time, the light-emitting elements LE may be separated from the substrate SUB.

[0074] The buffer layer BFL may be arranged on the substrate SUB. The buffer layer BFL may be formed to reduce the lattice constant difference between the semiconductor layer EPI (e.g., the first semiconductor layer SCL1) and the substrate SUB. In an embodiment, the buffer layer BFL may include an undoped semiconductor material. For example, the buffer layer BFL may include an undoped semiconductor layer (e.g., undoped GaN), and the undoped semiconductor layer includes a nitride-based semiconductor material, a phosphide-based semiconductor material, or another semiconductor material.

[0075] The semiconductor layer EPI may include a first semiconductor layer SCL1, a light-emitting layer EML, and a second semiconductor layer SCL2 sequentially arranged in one direction. As an example, the first semiconductor layer SCL1, the light-emitting layer EML, and the second semiconductor layer SCL2 may be sequentially arranged or stacked along the third direction DR3 from the first bottom surface S1 to the second bottom surface S2. The semiconductor layer EPI may also be referred to as a "semiconductor epitaxial stack" or an "epitaxial layer".

[0076] In an embodiment, the semiconductor layer EPI can be a stacked light-emitting structure of micro-LEDs having a length or width of approximately a few micrometers in the first direction DR1 or the second direction DR2. As an example, the semiconductor layer EPI can have a width W of approximately 0.5 μm to approximately 10 μm in the first direction DR1 or the second direction DR2. However, the size of the semiconductor layer EPI and the light-emitting element LE including the semiconductor layer EPI can vary according to the embodiment.

[0077] The first semiconductor layer SCL1 can include a semiconductor material doped with a dopant of a first conductivity type. For example, the first semiconductor layer SCL1 can include a nitride-based semiconductor material, a phosphide-based semiconductor material, or another semiconductor material, and can be a first conductivity type semiconductor layer further including a dopant of a first conductivity type. In an embodiment, the first semiconductor layer SCL1 can be an n-type semiconductor layer (e.g., n-GaN) doped with an n-type dopant such as Si, Ge, Se, Sn, etc., but is not limited thereto.

[0078] The light-emitting layer EML can be disposed on the first semiconductor layer SCL1. For example, the light-emitting layer EML can be disposed between the first semiconductor layer SCL1 and the second semiconductor layer SCL2. The light-emitting layer EML can emit light through the recombination of electron-hole pairs generated in response to an electrical signal applied through the first semiconductor layer SCL1 and the second semiconductor layer SCL2.

[0079] The light-emitting layer EML can include a nitride-based semiconductor material, a phosphide-based semiconductor material, or another semiconductor material, and can have a single quantum well structure or a multi-quantum well structure. In an embodiment, the light-emitting layer EML can have a multi-quantum well structure including a quantum well layer containing InGaN and a barrier layer containing GaN, AlGaN, or GaAlN, but is not limited thereto. In an embodiment, when the light-emitting layer EML includes InGaN, the color of the light emitted from the light-emitting layer EML can be adjusted or changed by adjusting the content of indium (In).

[0080] In an embodiment, the light-emitting layer EML can emit light in the visible light wavelength band, for example, light in the wavelength band of approximately 400 nm to approximately 900 nm. For example, the light-emitting layer EML can emit blue light with a peak wavelength in the range of approximately 440 nm to approximately 480 nm, green light with a peak wavelength in the range of approximately 510 nm to approximately 550 nm, or red light with a peak wavelength in the range of approximately 610 nm to approximately 650 nm. The light-emitting layer EML can emit light of a color or wavelength band different from the above.

[0081] The second semiconductor layer SCL2 may include a semiconductor material doped with a dopant of a second conductivity type. For example, the second semiconductor layer SCL2 may include a nitride-based semiconductor material, a phosphide-based semiconductor material, or another semiconductor material, and may be a second conductivity type semiconductor layer further including a dopant of the second conductivity type. In an embodiment, the second semiconductor layer SCL2 may be a p-type semiconductor layer (e.g., p-GaN) doped with a p-type dopant such as Mg, Zn, Ca, Ba, etc., but is not limited thereto.

[0082] The contact electrode CTE may be disposed on the semiconductor layer EPI. For example, the contact electrode CTE may be disposed on the second semiconductor layer SCL2. The contact electrode CTE may be provided to the light-emitting element LE to protect the second semiconductor layer SCL2 and to smoothly connect the second semiconductor layer SCL2 to at least one electrode, circuit element, or wire.

[0083] In an embodiment, the contact electrode CTE may be completely disposed on the semiconductor layer EPI. For example, the contact electrode CTE may be completely disposed on the second semiconductor layer SCL2. Thus, the contact electrode CTE may appropriately or stably protect the second semiconductor layer SCL2. However, the embodiment is not limited thereto. For example, the contact electrode CTE may be disposed only on a part of the second semiconductor layer SCL2.

[0084] The contact electrode CTE may include a metal, a metal oxide, or other conductive material. As an example, the contact electrode CTE may be formed alone or by mixing metals (such as chromium (Cr), titanium (Ti), aluminum (Al), gold (Au), nickel (Ni), or copper (Cu)), their oxides or alloys, and transparent conductive materials (such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), or indium oxide (In2O3)). The contact electrode CTE may also be formed of other materials.

[0085] The multilayer film MLF may wrap or surround the semiconductor layer EPI. For example, the multilayer film MLF may wrap or surround the side surfaces of the first semiconductor layer SCL1, the light-emitting layer EML, and the second semiconductor layer SCL2. In an embodiment where the light-emitting element LE further includes the contact electrode CTE, the multilayer film MLF may selectively wrap or surround the contact electrode CTE. For example, the multilayer film MLF may partially or completely surround the side surface of the contact electrode CTE, or may not surround the contact electrode CTE.

[0086] The multilayer film MLF can expose the first semiconductor layer SCL1 (or another contact electrode disposed on the first bottom surface S1 of the light-emitting element LE) at the first bottom surface S1 (or the first end including the first bottom surface S1) of the light-emitting element LE, and can expose the contact electrode CTE (or the second semiconductor layer SCL2) at the second bottom surface S2 (or the second end including the second bottom surface S2) of the light-emitting element LE. For example, the multilayer film MLF may not be disposed on the first bottom surface S1 (or the first end) and the second bottom surface S2 (or the second end) of the light-emitting element LE. Therefore, an electrical signal can be applied to the light-emitting element LE through the first bottom surface S1 (or the first end) and the second bottom surface S2 (or the second end) of the light-emitting element LE.

[0087] The multilayer film MLF can be disposed on the surface of the light-emitting element LE so as to at least surround the semiconductor layer EPI. The multilayer film MLF can protect the semiconductor layer EPI. Therefore, the reliability and electrical stability of the light-emitting element LE can be ensured. In addition, the multilayer film MLF can reflect the light generated in the light-emitting layer EML and guided to the side surface of the light-emitting element LE. Therefore, the light-emitting efficiency of the light-emitting element LE can be improved.

[0088] The multilayer film MLF can include a multilayer insulating film MLO, a low refractive index film LRL, and a reflective film RFL that sequentially surround the side surface of the semiconductor layer EPI. In an embodiment, the multilayer insulating film MLO can be composed of three or more insulating films, and the multilayer insulating film MLO and the low refractive index film LRL can form a multilayer composite film MCF (or a composite insulating film) of four or more films. The reflective film RFL can be a single film or a multilayer film. In an embodiment, the multilayer film MLF can further include a protective film PRL surrounding the reflective film RFL. The protective film PRL can be a single film or a multilayer film. The multilayer film MLF including the protective film PRL can be composed of six or more films that sequentially surround the side surface of the semiconductor layer EPI.

[0089] Figure 5 is Figure 1 An enlarged schematic cross-sectional view of the region A1. For example, Figure 5 shows details of the multilayer film MLF according to an embodiment.

[0090] In addition to Figures 1 to 4 other than, refer to Figure 5 the multilayer film MLF can include a multilayer composite film MCF and a reflective film RFL. In an embodiment, the multilayer film MLF can further include a protective film PRL located at the outermost portion.

[0091] The multilayer composite film MCF can include a multilayer insulating film MLO and a low refractive index film LRL. The multilayer insulating film MLO and the low refractive index film LRL can sequentially surround the semiconductor layer EPI.

[0092] A multi-layer insulation film MLO can be disposed on the surface of a semiconductor layer EPI to ensure the electrical stability of a light-emitting element LE. In addition, the multi-layer insulation film MLO can block or reduce the inflow of oxygen into the semiconductor layer EPI, thereby slowing down the deterioration of the light-emitting element LE and improving the reliability and luminous efficiency of the light-emitting element LE. In an embodiment, the multi-layer insulation film MLO can be made of an oxide insulation film including multiple layers of each oxide, and can include oxygen vacancies formed at the interfaces of the oxide insulation films including different materials. The multi-layer insulation film MLO can block or reduce the inflow of oxygen into the semiconductor layer EPI by capturing oxygen with the oxygen vacancies.

[0093] The multi-layer insulation film MLO can include a first insulation film INF1, a second insulation film INF2, and a third insulation film INF3 that sequentially surround the side surface of the semiconductor layer EPI. In an embodiment, the multi-layer insulation film MLO can further surround at least a portion of the contact electrode CTE (e.g., the side surface of the contact electrode CTE).

[0094] The first insulation film INF1 can be directly disposed on the side surface of the semiconductor layer EPI to surround the semiconductor layer EPI. In an embodiment, the first insulation film INF1 can include a material having a high dissociation energy. As an example, the first insulation film INF1 can include a material having a dissociation energy in the range of about 7 eV to about 9 eV. In an embodiment, the first insulation film INF1 can include an oxide having a high dissociation energy, such as zirconium oxide, silicon oxide, hafnium oxide, tantalum oxide, or lanthanum oxide or other oxides. For example, the first insulation film INF1 can include ZrO2, SiO2, HfO2, Ta2O5, or La2O3 or other oxides. Since the first insulation film INF1 has a high dissociation energy, oxygen dissociation or oxygen diffusion caused by the influence of thermal energy or an electric field that may occur during the process of manufacturing the light-emitting element LE or during the operation of the light-emitting element LE can be prevented or reduced, or oxygen diffusion caused by oxygen dissociation can be prevented or reduced. Therefore, the inflow of oxygen into the semiconductor layer EPI can be prevented or reduced and the semiconductor layer EPI can be stably protected.

[0095] The second insulating film INF2 may surround the first insulating film INF1. In an embodiment, the second insulating film INF2 may include an oxide different from the oxide included in the first insulating film INF1. In an embodiment, the second insulating film INF2 may include an oxide that can sufficiently protect the light-emitting element LE while generating oxygen vacancies at each interface where it intersects with the first insulating film INF1 and the third insulating film INF3, which are sufficient to improve the degradation of the light-emitting element LE. In an embodiment, the second insulating film INF2 may include silicon oxide or aluminum oxide. For example, the second insulating film INF2 may include SiO2 or Al2O3. In an embodiment, the second insulating film INF2 includes a material having a relatively high dissociation energy (e.g., a dissociation energy of about 7 eV to about 9 eV), and thus can stably protect the semiconductor layer EPI, but the embodiment is not limited thereto.

[0096] The third insulating film INF3 may surround the second insulating film INF2. In an embodiment, the third insulating film INF3 may include an oxide different from the oxide included in the second insulating film INF2. In an embodiment, the third insulating film INF3 may include an oxide that can reduce or minimize defects of the light-emitting element LE while generating oxygen vacancies at the interface where it intersects with the second insulating film INF2, which are sufficient to improve the degradation of the light-emitting element LE. In an embodiment, the third insulating film INF3 includes a material having a relatively high dissociation energy (e.g., a dissociation energy of about 7 eV to about 9 eV), and thus can stably protect the semiconductor layer EPI, but the embodiment is not limited thereto. In an embodiment, the third insulating film INF3 may include the same oxide as the oxide included in the first insulating film INF1. For example, the third insulating film INF3 may include zirconium oxide (e.g., ZrO2), silicon oxide (e.g., SiO2), hafnium oxide (e.g., HfO2), tantalum oxide (e.g., Ta2O5), and lanthanum oxide (e.g., La2O3) or other oxides.

[0097] In an embodiment, the multi-layer insulating film MLO can be made of a combination of materials that can block the inflow of oxygen into the semiconductor layer EPI and improve the reliability of the semiconductor layer EPI. For example, the first insulating film INF1 and the third insulating film INF3 can include ZrO2 or HfO2, and the second insulating film INF2 can include SiO2 or Al2O3. As an example, the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can each include ZrO2, SiO2, and ZrO2, and thus, the multi-layer insulating film MLO can have a triple-layer film structure of ZrO2 / SiO2 / ZrO2. In other embodiments, the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can each include ZrO2, Al2O3, and ZrO2, and thus, the multi-layer insulating film MLO can have a triple-layer film structure of ZrO2 / Al2O3 / ZrO2. In other embodiments, the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can each include HfO2, Al2O3, and HfO2, and thus, the multi-layer insulating film MLO can have a triple-layer film structure of HfO2 / Al2O3 / HfO2. The multi-layer insulating film MLO can have a multi-layer film structure based on other combinations of materials. Since the multi-layer insulating film MLO appropriately protects the semiconductor layer EPI and blocks or reduces the inflow of oxygen into the light-emitting layer EML, etc., the quantum efficiency and luminous efficiency of the light-emitting element LE can be improved or guaranteed, and the deterioration of the light-emitting element LE can be suppressed to improve the reliability of the light-emitting element LE.

[0098] In an embodiment, the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can each include an M1O2 type (or MO2 type) oxide, an M22O3 type (or M2O3 type) oxide, and an M3O2 (or MO2 type) oxide. Here, M or M1, M2, and M3 are substances that combine with oxygen (or oxygen ions), and for example, each can be a metal substance (or metal ion). For example, the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can each include an M1O2 type (or MO2 type) metal oxide, an M22O3 type (or M2O3 type) metal oxide, and an M3O2 (or MO2 type) metal oxide. At least two of M1, M2, and M3 can be the same material, or M1, M2, and M3 can be different materials. As an example, M1 and M3 can be the same material, and M2 can be a material different from M1 and M3, but the embodiments are not limited thereto.

[0099] In an embodiment, the oxides used to form the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 may be materials selected to reduce or minimize defects in the light-emitting element LE while generating oxygen vacancies at the interfaces of the insulating films sufficient to improve the degradation of the light-emitting element LE. In an embodiment, each of the first insulating film INF1 and the third insulating film INF3 may include zirconium oxide, silicon oxide, hafnium oxide, germanium oxide, titanium oxide, or tellurium oxide. For example, each of the first insulating film INF1 and the third insulating film INF3 may include ZrO2, SiO2, HfO2, GeO2, TiO2, or TeO2. The first insulating film INF1 and the third insulating film INF3 may include the same oxide or different oxides.

[0100] In an embodiment, the second insulating film INF2 may include aluminum oxide, yttrium oxide, lanthanum oxide, cerium oxide, lutetium oxide, scandium oxide, or ytterbium oxide. For example, the second insulating film INF2 may include Al2O3, Y2O3, La2O3, Ce2O3, Lu2O3, Sc2O3, or Yb2O3.

[0101] In an embodiment, the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 may each include ZrO2, Al2O3, and ZrO2, and thus, the multiple insulating film MLO may have a triple film structure of ZrO2 / Al2O3 / ZrO2. At the interfaces where the second insulating film INF2 contacts the first insulating film INF1 and the third insulating film INF3, oxygen vacancies may be formed due to interface reactions. As an example, at the interfaces, the Al2O3 of the second insulating film INF2 may react with the ZrO2 of the first insulating film INF1 and the ZrO2 of the third insulating film INF3, thereby forming oxygen vacancies. For example, at the interfaces where the second insulating film INF2 contacts the first insulating film INF1 and the third insulating film INF3, the Al2O3 of the second insulating film INF2 reacts with the two ZrO2s (the ZrO2 of the first insulating film INF1 and the ZrO2 of the third insulating film INF3) of the first insulating film INF1 and the third insulating film INF3, such that zirconium (Zr) may replace aluminum (Al). And oxygen (O) may replace each other. At the interfaces where the second insulating film INF2 contacts the first insulating film INF1 and the third insulating film INF3, since the ratio of oxygen (O) ions in the first insulating film INF1 and the third insulating film INF3 to oxygen (O) ions in the second insulating film INF2 is 4:3, three oxygen ions enter three of the four oxygen sites, and one oxygen site remains empty, which may result in oxygen vacancies. The oxygen vacancies formed by the interface reactions are defects fixed to adjacent atoms and may not move even when the light-emitting element LE is operating. The oxygen vacancies formed at the interfaces of the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 may be used as trapping sites for capturing oxygen flowing into the light-emitting element LE, thereby suppressing the diffusion of oxygen into the semiconductor layer EPI. Therefore, the deterioration of the light-emitting element LE may be reduced or minimized, and the reliability of the light-emitting element LE may be improved.

[0102] The first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can be formed as thin films having a limited thickness sufficient to reduce or minimize the impact on the semiconductor layer EPI. In an embodiment, the oxides used to form the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can be formed with a limited thickness to reduce or minimize defects in the light-emitting element LE while smoothly causing an interfacial reaction that generates oxygen vacancies at the interface of the insulating films sufficient to improve the degradation of the light-emitting element LE. For example, the thickness of each of the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can be in the range of about 0.5 nm to about 5 nm. Additionally, the sum of the thicknesses of the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 (e.g., the thickness of the multi-layer insulating film MLO) can be about 10 nm or less. In an embodiment, the thickness of each of the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can be limited to a narrower range of about 0.5 nm to about 3 nm to minimize the impact on the light-emitting layer EML.

[0103] In an embodiment, the second insulating film INF2 can be formed to have a thickness of about 2 nm or less (e.g., a thickness in the range of about 1 nm to about 2 nm) to smoothly cause an interfacial reaction. The first insulating film INF1 can be formed to have a greater thickness than the second insulating film INF2 to prevent defects from occurring in a region too close to the semiconductor layer EPI (e.g., to ensure a specific distance or greater between the interface of the first insulating film INF1 and the second insulating film INF2 and the semiconductor layer EPI), and can be formed with a limited thickness to reduce or minimize the impact on the semiconductor layer EPI. As an example, the first insulating film INF1 can be formed to have a thickness of about 3 nm or less (e.g., a thickness in the range of about 2 nm to about 3 nm). The thickness of the third insulating film INF3 can be formed to be greater than or equal to the thickness of the second insulating film INF2 such that the interfacial reaction can occur relatively uniformly at the interface between the first insulating film INF1 and the second insulating film INF2 and at the interface between the second insulating film INF2 and the third insulating film INF3 (e.g., the interfacial reaction is not concentrated at the interface between the first insulating film INF1 and the second insulating film INF2). As an example, the third insulating film INF3 can be formed to have a thickness of about 2 nm or about 3 nm or less (e.g., a thickness in the range of about 1 nm to about 3 nm). Thus, the reliability of the light-emitting element LE can be improved by reducing or minimizing defects in the light-emitting element LE and improving the degradation of the light-emitting element LE.

[0104] The low refractive index film LRL can surround the multiple insulating film MLO. For example, the low refractive index film LRL can surround the third insulating film INF3. The low refractive index film LRL can surround the side surfaces of the semiconductor layer EPI and / or the contact electrode CTE, and the multiple insulating film MLO is between the low refractive index film LRL and the semiconductor layer EPI and / or the contact electrode CTE.

[0105] The low refractive index film LRL can include a low refractive index material (e.g., SiO2) such that at least some of the light transmitted through the multiple insulating film MLO can be transmitted through the low refractive index film LRL and reach the reflective film RFL. As an example, the low refractive index film LRL can be made of a fourth insulating film INF4 including SiO2, or can be made of a multiple film including the fourth insulating film INF4.

[0106] In an embodiment, the low refractive index film LRL can have a greater thickness than the multiple insulating film MLO. For example, the thickness of the low refractive index film LRL can be greater than the sum of the thicknesses of the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3.

[0107] In an embodiment, the low refractive index layer LRL can be formed to have an appropriate thickness to increase or maximize the reflectivity of the light generated from the light-emitting element LE and reflected from the multiple film MLF. For example, the multiple composite film MCF including the multiple insulating film MLO and the low refractive index film LRL can be interposed between the semiconductor layer EPI and the reflective film RFL to form a composite refractive film, and can have a thickness that causes a resonance phenomenon with respect to the emission wavelength of the light-emitting element LE. For example, when the emission wavelength of the light-emitting layer EML (or the light-emitting element LE) (e.g., the peak wavelength of the light generated in the light-emitting layer EML) is λ and the composite refractive index of the multiple composite film MCF is n, the multiple composite film MCF can have a thickness of λ / (4n).

[0108] In an embodiment, the multiple composite film MCF can have a thickness in a predetermined or selected range (e.g., a range of ±20%) centered on the thickness of λ / (4n). For example, the thickness of the multiple composite film MCF corresponding to the sum of the thickness of the multiple insulating film MLO (e.g., the sum of the thicknesses of the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3) and the thickness of the low refractive index film LRL (e.g., the thickness of the fourth insulating film INF4) can be included in or satisfy the range of the following formula 1.

[0109] [Formula 1]

[0110]

[0111] In Equation 1, t can be the thickness of the multi - composite film MCF, λ can be the emission wavelength of the light - emitting layer EML (or light - emitting element LE) (e.g., the peak wavelength of the light generated in the light - emitting layer EML), and n can be the composite refractive index of the multi - composite film MCF.

[0112] As an example, when the emission wavelength λ of the light - emitting layer EML is about 460 nm, the thickness of the multi - layer insulating film MLO is limited to about 10 nm or less, and the low - refractive - index film LRL is made of SiO2, the multi - composite film MCF can be formed to have a thickness t of about 80 nm. However, this can vary depending on the composite refractive index according to the materials and thicknesses of the multi - layer insulating film MLO and the low - refractive - index film LRL.

[0113] In other embodiments, when the resonance effect caused by the multi - composite film MCF is actually caused by the resonance phenomenon through the low - refractive - index film LRL, t is the total thickness of the multi - composite film MCF, λ is the emission wavelength of the light - emitting layer EML, and n can be the refractive index of the low - refractive - index film LRL.

[0114] In an embodiment, the central value (or reference value) of the thickness t of the multi - composite film MCF is not limited to the value of λ / (4n), and the thickness t of the multi - composite film MCF can be changed to different values within a range where the reflected light can be enhanced or optimized. For example, the central value of the thickness t of the multi - composite film MCF can be a value corresponding to a multiple (e.g., an integer multiple) of λ / (4n).

[0115] In an embodiment, the thickness t of the multi - composite film MCF can be a value within a range including a multiple of λ / (4n) and plus a predetermined or selected margin value. For example, the thickness t of the multi - composite film MCF can be a value within a specific range based on a multiple of λ / (4n). As an example, the thickness t of the multi - composite film MCF can be a value within a range where the lower limit is subtracted by about 15% of the margin value and the upper limit is added by about 15% of the margin value, with a multiple of λ / (4n) as the central value. In other embodiments, the thickness t of the multi - composite film MCF can be a value within a range where the lower limit is subtracted by about 20% of the margin value and the upper limit is added by about 20% of the margin value, with a multiple of λ / (4n) as the central value. As an example, the thickness t of the multi - composite film MCF can be included within the following Equation 2.

[0116] [Equation 2]

[0117]

[0118] In Formula 2, t may be the thickness of the multi - composite film MCF, λ may be the emission wavelength of the light - emitting layer EML (or the light - emitting element LE), n may be the composite refractive index of the multi - composite film MCF, and k may be an integer (or a natural number greater than 0).

[0119] Thus, in an embodiment, the thickness t of the multi - composite film MCF can be appropriately adjusted or set within a range that can enhance the reflected light of the multi - layer film MLF.

[0120] The reflective film RFL may surround the low - refractive - index film LRL. The reflective film RFL may surround the side surfaces of the semiconductor layer EPI and / or the contact electrode CTE, and the multi - composite film MCF is between the reflective film RFL and the semiconductor layer EPI and / or the contact electrode CTE.

[0121] In an embodiment, the reflective film RFL may include a metal having a high light reflectivity. For example, the reflective film RFL may include at least one metal having a high reflectivity, such as aluminum (Al), molybdenum (Mo), titanium (Ti), copper (Cu), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), or chromium (Cr), or at least one metal film MTF including other reflective materials. The reflective film RFL can reflect the light that transmits through the low - refractive - index film LRL and reaches the reflective film RFL.

[0122] In an embodiment, the reflective film RFL can be formed to have a thickness that can be easily formed during the manufacturing process while appropriately ensuring the light reflectivity. As an example, the reflective film RFL may have a thickness in the range of about 30 nm to about 200 nm.

[0123] According to an embodiment, at least a part of the light L1 traveling from the semiconductor layer EPI toward the multi - layer film MLF can be reflected at the interface between the semiconductor layer EPI and the multi - composite film MCF, and at least a part of the light that transmits through the multi - layer film MLF can be reflected at the interface between the multi - composite film MCF and the reflective film RFL. In an embodiment, when the multi - composite film MCF is formed to have a thickness t that can obtain a resonance effect, due to the constructive interference between the reflected light L2 reflected at the interface between the semiconductor layer EPI and the multi - composite film MCF and the reflected light L3 reflected at the interface between the multi - composite film MCF and the reflective film RFL, the light reflected by the multi - layer film MLF can be increased and the reflectivity of the light - emitting element LE can be increased or maximized. Therefore, the loss of light generated from the light - emitting element LE can be prevented or reduced, and the luminous efficiency of the light - emitting element LE can be improved.

[0124] The protective film PRL may surround the reflective film RFL. For example, the protective film PRL may wrap or surround at least the side surface of the semiconductor layer EPI and may be disposed on the outermost portion of the light emitting element LE. In an embodiment, the protective film PRL may at least partially wrap or surround the side surface of the contact electrode CTE.

[0125] The protective film PRL may be an insulating film of a single film or multiple films. For example, the protective film PRL may be made of a single film or a multiple film including at least a fifth insulating film INF5. The protective film PRL may include at least one insulating material or other insulating materials in silicon oxide (e.g., SiO2), silicon nitride (e.g., Si3N4), aluminum oxide (e.g., Al2O3), titanium oxide (e.g., TiO2), and hafnium oxide (e.g., HfO2). The protective film PRL may ensure or improve the electrical stability of the light-emitting element LE by protecting the reflective film RFL, etc. and preventing short-circuit defects in the light-emitting element LE. In addition, since the protective film PRL appropriately or stably protects the light-emitting element LE, the reliability of the light-emitting element LE can be further improved. The protective film PRL may be formed to have a thickness that can be easily formed during the manufacturing process while stably protecting the light-emitting element LE. As an example, the protective film PRL may have a thickness in the range of about 10nm to about 200nm, but is not limited thereto.

[0126] As described above, the light emitting element LE according to the embodiment may include a multiple insulating film MLO, a low refractive index film LRL, and a reflective film RFL that sequentially surround the semiconductor layer EPI. In some embodiments, the light emitting element LE may further include a protective film PRL surrounding the reflective film RFL. According to an embodiment, the protective film PRL may reduce or block the flow of oxygen into the semiconductor layer EPI and prevent short circuit defects in the light emitting element LE. Therefore, the reliability and life of the light emitting element LE may be improved, and the electrical stability of the light emitting element LE may be ensured. In addition, light traveling to the multiple film MLF may be appropriately or effectively reflected by the multiple composite film MCF including the multiple insulating film MLO and the low refractive index film LRL, and the reflective film RFL. Therefore, the luminous efficiency of the light emitting element LE may be improved.

[0127] Figure 6 is a schematic cross-sectional view showing a light emitting element LE according to an embodiment. For example, regarding the shape of the light emitting element LE, Figure 6 Shown with Figure 1 Different implementations.

[0128] Apart from Figures 1 to 5 In addition, reference Figure 6, the light-emitting element LE may include side surfaces (e.g., inclined sidewalls) that are inclined with respect to the first bottom surface S1 and / or the second bottom surface S2. For example, the side surface of the semiconductor layer EPI may have an inclined surface that is inclined at an angle θ of approximately 60 to 90 degrees with respect to the first bottom surface S1 of the light-emitting element LE. The multilayer film MLF surrounding the semiconductor layer EPI may be formed in the form of an inclined surface that is inclined at an angle θ corresponding to the side surface of the semiconductor layer EPI with respect to the first bottom surface S1 of the light-emitting element LE. As an example, the side surfaces of the semiconductor layer EPI and the multilayer film MLF may be formed as inclined surfaces having an angle θ less than 90 degrees with respect to the first bottom surface S1 of the light-emitting element LE. Accordingly, the efficiency of the light emitted from the first bottom surface S1 of the light-emitting element LE can be improved.

[0129] In an embodiment, the light-emitting element LE may be disposed on a display panel or the like, and the first bottom surface S1 may face upward, and the display panel may be a front emission display panel that emits light in the upward direction. By increasing the efficiency of the light emitted from the light-emitting element LE through the first bottom surface S1, the light-emitting efficiency of the display panel can be increased.

[0130] The arrangement direction or shape of the side surface (e.g., inclined surface) of the light-emitting element LE may vary according to the embodiment. For example, in consideration of the light-emitting efficiency of the light-emitting element LE and the electronic device (e.g., display panel) including the light-emitting element LE, the arrangement direction or shape (e.g., the shape of the side surface) of the light-emitting element LE may be variously adjusted or changed.

[0131] Figures 7 to 13 is a schematic cross-sectional view showing a method of manufacturing the light-emitting element LE according to an embodiment. For example, Figures 7 to 13 sequentially shows the manufacturing steps for manufacturing the light-emitting element LE according to Figures 1 to 5 the embodiment of Figure 6 The light-emitting element LE according to the embodiment of Figures 1 to 5 may be manufactured in a substantially similar manner to the light-emitting element LE according to the embodiment of Figure 6 For example, except that the semiconductor layer EPI and the contact electrode CTE may be etched to have side surfaces in the form of inclined surfaces, the light-emitting element LE according to the embodiment of Figures 1 to 5 may be manufactured in a substantially similar or identical manner to the light-emitting element LE according to the embodiment of

[0132] Refer to Figure 7, a substrate SUB for manufacturing a light-emitting element LE can be prepared, and a first semiconductor layer SCL1, a light-emitting layer EML, and a second semiconductor layer SCL2 can be sequentially formed on the substrate SUB. In the case of manufacturing a light-emitting element LE including a contact electrode CTE, a conductive layer CDL for forming the contact electrode CTE can be further formed on the second semiconductor layer SCL2. In an embodiment, a buffer layer BFL can be first formed on the substrate SUB, and the first semiconductor layer SCL1, the light-emitting layer EML, the second semiconductor layer SCL2, and the conductive layer CDL can be sequentially formed on the buffer layer BFL.

[0133] The substrate SUB can be a semiconductor substrate suitable for epitaxial growth. The substrate SUB can be a semiconductor substrate including the above materials.

[0134] The buffer layer BFL can be formed of the above semiconductor material and can be completely formed on the substrate SUB by epitaxial growth. As an example, the buffer layer BFL can be formed on the substrate SUB by epitaxial growth using a process technology such as metalorganic chemical vapor deposition (MOCVD), metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), or vapor phase epitaxy (VPE).

[0135] The semiconductor layer EPI can be formed of the above semiconductor material and can be sequentially formed on the buffer layer BFL (or the substrate SUB) by epitaxial growth. The semiconductor layer EPI can be first completely formed on the buffer layer BFL.

[0136] For example, the first semiconductor layer SCL1 can be formed on the buffer layer BFL by epitaxial growth using the above nitride-based semiconductor material, phosphide-based semiconductor material, or other semiconductor materials. The first semiconductor layer SCL1 can be doped to include a first conductive type dopant (e.g., an n-type dopant).

[0137] The light-emitting layer EML can be formed on the first semiconductor layer SCL1 by epitaxial growth using the above nitride-based semiconductor material, phosphide-based semiconductor material, or other semiconductor materials. In an embodiment, a light-emitting layer EML having a multi-quantum well structure can be formed by alternately and / or repeatedly forming a barrier layer and a quantum well layer on the first semiconductor layer SCL1.

[0138] The second semiconductor layer SCL2 can be formed on the light-emitting layer EML by epitaxial growth using the above nitride-based semiconductor material, phosphide-based semiconductor material, or other semiconductor materials. The second semiconductor layer SCL2 can be doped to include a second conductive type dopant (e.g., a p-type dopant).

[0139] The conductive layer CDL can be formed on the semiconductor layer EPI using the conductive material mentioned above as the contact electrode CTE or other conductive materials. In an embodiment, the conductive layer CDL can be formed entirely on the second semiconductor layer SCL2. As an example, the conductive layer CDL can be formed by completely depositing a conductive material on the substrate SUB on which the semiconductor layer EPI is formed.

[0140] Reference Figure 8 , the first semiconductor layer SCL1, the light-emitting layer EML, the second semiconductor layer SCL2, and the conductive layer CDL can be etched into dimensions and / or shapes corresponding to each light-emitting element LE to be manufactured. Thus, the semiconductor layer EPI and the contact electrode CTE of the light-emitting element LE can be formed. In an embodiment, the first semiconductor layer SCL1, the light-emitting layer EML, the second semiconductor layer SCL2, and the conductive layer CDL can be etched by a single-mask process, and thus, the contact electrode CTE can be formed into dimensions and shapes corresponding to the dimensions and shapes of the semiconductor layer EPI. However, the embodiment is not limited thereto. For example, the contact electrode CTE can be formed in dimensions and / or shapes different from those of the semiconductor layer EPI.

[0141] Reference Figures 9 to 12 , films for forming the Figure 1 multi-layer film MLF and the like disclosed in can be sequentially formed on the substrate SUB on which the semiconductor layer EPI and the contact electrode CTE are formed. In an embodiment, the film for forming the multi-layer film MLF can be first completely formed on the substrate SUB.

[0142] For example, first, as Figure 9As shown in [Fig.], a multilayer insulating film MLO can be completely formed on a substrate SUB, a buffer layer BFL, a first semiconductor layer SCL1, a light-emitting layer EML, a second semiconductor layer SCL2, and a contact electrode CTE. In an embodiment, the multilayer insulating film MLO including a first insulating film INF1, a second insulating film INF2, and a third insulating film INF3 can be formed by sequentially forming the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 on the substrate SUB on which the semiconductor layer EPI and the contact electrode CTE are formed. As an example, after the first insulating film INF1 is completely formed (e.g., deposited) on the substrate SUB on which the semiconductor layer EPI and the contact electrode CTE are formed, the second insulating film INF2 can be completely formed on the first insulating film INF1, and the third insulating film INF3 can be completely formed on the second insulating film INF2. The first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can be formed of each of the above-described insulating materials (e.g., each of the above-described oxides). Further, the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can be formed to have the above-described thickness. As an example, the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can each be formed to have a thickness in the range of about 0.5 nm to about 5 nm or about 0.5 nm to about 3 nm, and the multilayer insulating film MLO including the first insulating film INF1, the second insulating film INF2, and the third insulating film INF3 can be formed to have a thickness of about 10 nm or less.

[0143] Thereafter, as Figure 10 shown in [Fig.], a low-refractive-index film LRL can be completely formed on the multilayer insulating film MLO. The low-refractive-index film LRL can form a multilayer composite film MCF together with the multilayer insulating film MLO. In an embodiment, the low-refractive-index film LRL can be formed to have a thickness such that the total thickness t of the multilayer insulating film MLO and the low-refractive-index film LRL satisfies the thickness at which a resonance effect can be obtained for the emission wavelength λ of the light-emitting layer EML. For example, the low-refractive-index film LRL can be formed of the above-described materials (e.g., SiO2 or other low-refractive-index materials) and thickness (e.g., the thickness of a value obtained by subtracting the thickness of the multilayer insulating film MLO from the thickness t of the multilayer composite film MCF at which a resonance effect can be obtained).

[0144] Thereafter, as Figure 11 shown in [Fig.], a reflective film RFL can be completely formed on the low-refractive-index film LRL. In an embodiment, the reflective film RFL can be formed of the above-described materials (e.g., a metal having a high reflectivity, such as aluminum (Al)) and thickness (e.g., a thickness in the range of about 30 nm to about 200 nm).

[0145] Thereafter, asFigure 12 As shown, the protective film PRL can be completely formed on the reflective film RFL. In an embodiment, the protective film PRL can be formed of the above materials (e.g., an insulating material including SiO2) and a thickness (e.g., a thickness in the range of about 10 nm to about 200 nm). The protective film PRL can be an element provided on the outermost part of the light-emitting element LE, and the material and thickness of the protective film PRL are not particularly limited as long as the light-emitting element LE can be appropriately protected and the electrical stability of the light-emitting element LE can be ensured.

[0146] Reference Figure 13 , by etching the multilayer insulating film MLO, the low refractive index film LRL, the reflective film RFL, and the protective film PRL, the multilayer film MLF can be formed on the side surface of the semiconductor layer EPI, and at least a part of the contact electrode CTE can be exposed. For example, by completely etching the multilayer insulating film MLO, the low refractive index film LRL, the reflective film RFL, and the protective film PRL, the multilayer film MLF surrounding the side surfaces of the semiconductor layer EPI and the contact electrode CTE can be formed, and the upper surface of the contact electrode CTE can be exposed.

[0147] In an embodiment, the multilayer film MLF can be formed of five or more films. As an example, the multilayer film MLF can be formed of at least five films including the multilayer insulating film MLO including a triple film, the low refractive index film LRL, and the reflective film RFL. In an embodiment, the multilayer film MLF can further include the protective film PRL, and thus can be formed of at least six films.

[0148] In an embodiment, in the case of manufacturing the light-emitting element LE (or a plurality of light-emitting elements LE) separated from the substrate SUB or transferring the light-emitting element LE to a transfer substrate or a target substrate (e.g., the backplane substrate of a display panel), a process of separating the light-emitting element LE from the substrate SUB and the buffer layer BFL can be additionally performed. In an embodiment, the substrate SUB and the buffer layer BFL can be separated from the light-emitting element LE by electroetching and / or chemical etching, laser lift-off, or other methods.

[0149] Figure 14 is a schematic perspective view showing a display device 10 according to an embodiment.

[0150] Reference Figure 14 , the display device 10 according to an embodiment can include a display panel 100, and the display panel 100 includes a display area DA and a non-display area NDA. In an embodiment, the display device 10 can be an ultra-small display device applied to a virtual reality device or an augmented reality device, but is not limited thereto.

[0151] In an embodiment, the display panel 100 may have a quadrilateral planar shape having a long side in a first direction DR1 and a short side in a second direction DR2. In Figure 14 , the first direction DR1 may indicate the horizontal direction of the display panel 100, and the second direction DR2 may indicate the vertical direction of the display panel 100. A third direction DR3 may indicate the thickness direction or the height direction of the display panel 100. However, the planar shape of the display panel 100 is not limited thereto, and the display panel 100 may also have a different shape. For example, the display panel 100 may have a polygonal shape, a circular shape, an oval shape, or an irregular planar shape other than a quadrilateral shape.

[0152] The display area DA may be an area for displaying an image and may include pixels (or light-emitting elements LE (see Figure 1 )). In an embodiment, the planar shape of the display area DA may follow the planar shape of the display panel 100. Figure 1 shows that the display area DA has a quadrilateral planar shape. The display area DA may be provided in the central area of the display panel 100.

[0153] The non-display area NDA may be an area that does not display an image and may be positioned adjacent to the display area DA. As an example, the non-display area NDA may surround the display area DA.

[0154] The non-display area NDA may include a first common voltage supply area CVA1, a second common voltage supply area CVA2, a first pad area PDA1, a second pad area PDA2, and a peripheral area PHA.

[0155] The first common voltage supply area CVA1 may be provided between the first pad area PDA1 and the display area DA. The second common voltage supply area CVA2 may be provided between the second pad area PDA2 and the display area DA. In an embodiment, the display panel 100 may include only one of the first common voltage supply area CVA1 and the second common voltage supply area CVA2.

[0156] Each of the first common voltage supply area CVA1 and the second common voltage supply area CVA2 may include a common electrode connection portion electrically connected to a common electrode located in the display area DA. The common electrode connection portion may also be connected to a common voltage pad located in the first pad area PDA1 and / or the second pad area PDA2. The common electrode connection portion may include a conductive material (e.g., a metal material such as aluminum (Al)), and may electrically connect the common electrode of the display area DA and the common voltage pad of the first pad area PDA1 and / or the second pad area PDA2. The common voltage (or low-potential pixel voltage) applied to the first pad area PDA1 and / or the second pad area PDA2 may be provided to the light-emitting element LE of the display area DA through the common electrode connection portion. Figure 14 A display device 10 is shown in which the first common voltage supply area CVA1 and the second common voltage supply area CVA2 are located in the non-display area NDA, but the embodiments are not limited thereto. For example, at least one of the first common voltage supply area CVA1 and the second common voltage supply area CVA2 may also be located in the display area DA.

[0157] The first pad area PDA1 may be provided on one side (e.g., the upper side) of the display panel 100. The first pad area PDA1 may include a common voltage pad connected to an external circuit board.

[0158] The second pad area PDA2 may be provided on the other side (e.g., the lower side) of the display panel 100. The second pad area PDA2 may include a common voltage pad connected to an external circuit board. In an embodiment, the display panel 100 may also include only one of the first pad area PDA1 and the second pad area PDA2.

[0159] The peripheral area PHA may be a remaining area obtained by removing the first common voltage supply area CVA1, the second common voltage supply area CVA2, the first pad area PDA1, and the second pad area PDA2 from the non-display area NDA. The peripheral area PHA may not only surround the display area DA, but may also surround the first common voltage supply area CVA1, the second common voltage supply area CVA2, the first pad area PDA1, and the second pad area PDA2.

[0160] Figure 15 is a schematic perspective view showing a display device 10 according to an embodiment.

[0161] Reference Figure 15 , the display device 10 may include a display panel 100, a display driving circuit 200, and a circuit board 300. In an embodiment, the display device 10 may be a display device applied to a watch or the like, but is not limited thereto.

[0162] In an embodiment, the display panel 100 may have a quadrilateral planar shape on a plane defined by a first direction DR1 and a second direction DR2. As an example, the display panel 100 may have a substantially rectangular or square planar shape. The corners where the sides of the display panel 100 extending in the first direction DR1 and the sides of the display panel 100 extending in the second direction DR2 intersect may be rounded or may be formed as right angles. The shape of the display panel 100 may vary in various ways according to the embodiment. For example, the display panel 100 may also have a non - quadrilateral polygonal shape, a circular shape, an oval shape, or other planar shapes.

[0163] The display panel 100 may include a main area MA, and the main area MA includes a display area DA and a non - display area NDA. The display area DA may be an area for displaying an image and may include pixels. The non - display area NDA may be provided around the display area DA and may surround the display area DA.

[0164] In an embodiment, the display panel 100 may further include a sub - area SBA extending from the main area MA. In an embodiment, the sub - area SBA may extend from one end of the main area MA in the second direction DR2, and may have a width or length smaller than the width or length of the main area MA in at least one of the first direction DR1 and the second direction DR2. Figure 15 The sub - area SBA is shown expanded parallel to the main area MA in the figure, but the sub - area SBA may be folded or bent. For example, the sub - area SBA may be folded at a portion adjacent to the main area MA, and thus a part of the sub - area SBA may overlap the main area MA. As an example, the portion of the sub - area SBA where the display driving circuit 200 and the like are installed may be located on the back surface of the main area MA.

[0165] The display driving circuit 200 may be provided in the sub - area SBA, but is not limited thereto. For example, the display driving circuit 200 may be mounted on another circuit board electrically connected to the display panel 100.

[0166] The display driving circuit 200 may generate driving signals for driving the display panel 100. In an embodiment, the display driving circuit 200 may be formed as an integrated circuit (IC), and may be attached to the display panel 100 in a chip - on - glass (COG) manner, a chip - on - plastic (COP) manner, an ultrasonic bonding manner, or other manners.

[0167] The circuit board 300 may be attached to one end of the display panel 100. As an example, the circuit board 300 may be attached to the pad portion of the display panel 100 located at one end of the sub - area SBA, and is electrically connected to the display panel 100 and the display driving circuit 200.

[0168] Signals and power voltages for driving the display panel 100 can be provided to the display panel 100 and the display driving circuit 200 through the circuit board 300. The circuit board 300 can be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film, but is not limited thereto.

[0169] Figure 16 is a schematic plan view showing a display area DA according to an embodiment. For example, Figure 16 schematically shows the setting in Figure 14 or Figure 15 the pixel PX in the display area DA.

[0170] Referring to Figures 14 to 16 , the display panel 100 may include pixels PX arranged in the display area DA. In an embodiment, the display panel 100 may include a first pixel PX1 (e.g., a first color sub-pixel) that emits light of a first color, a second pixel PX2 (e.g., a second color sub-pixel) that emits light of a second color, and a third pixel PX3 (e.g., a third color sub-pixel) that emits light of a third color. In an embodiment, the first color may be red, the second color may be green, and the third color may be blue, but the present disclosure is not limited thereto. At least one first pixel PX1, at least one second pixel PX2, and at least one third pixel PX3 adjacent to each other may constitute each unit pixel UPX. The number, type, and / or arrangement structure of the pixels PX constituting the unit pixel UPX may vary according to the embodiment.

[0171] Each pixel PX may include at least one light-emitting element LE. For example, each pixel PX may include a light-emitting element LE according to at least one of the above embodiments. As an example, each pixel PX may include a light-emitting element LE including a semiconductor layer EPI and a multilayer film MLF surrounding a side surface of the semiconductor layer EPI as shown in Figures 1 to 6 .

[0172] The pixel PX may include a light emitting element LE that emits light of the same color, or may include a light emitting element LE that emits light of different colors. As an example, the first pixel PX1, the second pixel PX2, and the third pixel PX3 may include a light emitting element LE that emits light of the same color (e.g., blue light), and a wavelength conversion pattern (e.g., a wavelength conversion pattern including quantum dots) and / or a color filter for converting or controlling the color of light emitted from the light emitting element LE disposed in each pixel PX may be disposed in the light emitting region of the first pixel PX1, the second pixel PX2, and / or the third pixel PX3. In other embodiments, the first pixel PX1, the second pixel PX2, and the third pixel PX3 may also include a light emitting element LE that emits light of a first color, light of a second color, and light of a third color, respectively. The pixel PX may include light emitting elements LE of substantially the same size, or may include light emitting elements LE of different sizes.

[0173] In an embodiment, the pixels PX may be arranged in a matrix form, a stripe form, or other forms in the display area DA. The sizes of the pixels PX (or the light emitting areas of the pixels PX) may be substantially the same or different from each other. The arrangement form, position, or size of the pixels PX may be variously changed according to the embodiment.

[0174] In an embodiment, the pixel PX may have a quadrilateral planar shape such as a rectangle or a rhombus, but the embodiment is not limited thereto. For example, the pixel PX may have a polygonal shape other than a quadrilateral shape, a circular shape, an elliptical shape, or other planar shapes.

[0175] Figure 17 is a schematic cross-sectional view showing a display panel 100 according to an embodiment. Figure 18 is a schematic cross-sectional view showing a display panel 100 according to an embodiment. For example, Figure 17 and Figure 18 Shows the corresponding Figure 16 1 and 2 , and illustrate different examples of a cross section of the display panel 100 taken along line X1 - X1 ′, and schematic cross sections of a first pixel PX1 , a second pixel PX2 , and a third pixel PX3 adjacent to each other in a first direction DR1 . Figure 17 and Figure 18 The following table shows the Figure 1 and Figure 6 The display panel 100 of the light emitting element LE of the embodiment, and other configurations may be substantially the same or similar.

[0176] Figure 17 and Figure 18An embodiment is shown in which the light-emitting element LE is a light-emitting diode on silicon (LEDoS), where the light-emitting diode is provided as the light-emitting element LE on a semiconductor circuit board (e.g., the backplane substrate BP on which pixel circuits PXC and the like are formed based on a silicon wafer) formed by a semiconductor process using a silicon wafer. However, the device including the light-emitting element LE according to the embodiment is not limited thereto. For example, the light-emitting element LE manufactured according to the embodiment can be applied to display devices of different types and / or structures, or can be applied to other types and / or structures of devices, such as lighting devices.

[0177] In addition to Figures 1 to 16 this, referring to Figure 17 and Figure 18 , the display panel 100 may include a backplane substrate BP (also referred to as a "display substrate") and a light-emitting element LE provided on the backplane substrate BP. In addition, the display panel 100 may further include a first electrode PXE1 and a second electrode PXE2 connected to the light-emitting element LE, an organic film ORL provided around the light-emitting element LE, and a first capping layer CPL1 covering the light-emitting element LE and the second electrode PXE2.

[0178] The backplane substrate BP may include a display area DA in which pixels PX are arranged. In an embodiment, the backplane substrate BP may be a semiconductor circuit board formed by a semiconductor process using a silicon wafer. For example, the silicon wafer may be used as a base member to form the display panel 100. In an embodiment, the backplane substrate BP may include pixel circuits PXC provided in the display area DA.

[0179] The backplane substrate BP may further include Figure 14 or Figure 15 the non-display area NDA shown in

[0180] In an embodiment, the backplane substrate BP may further include conductive patterns (e.g., common electrode connection portions), lines, and pads located in the non-display area NDA.

[0181] Each pixel PX may include a first electrode PXE1, a second electrode PXE2, and a light-emitting element LE connected between the first electrode PXE1 and the second electrode PXE2. In an embodiment, each pixel PX may further include a pixel circuit PXC connected to the first electrode PXE1.

[0181] The pixel circuit PXC may be provided in the display area DA to correspond to the area where each pixel PX is formed. In an embodiment, each of the pixel circuits PXC may include a complementary metal oxide semiconductor (CMOS) circuit formed on the backplane substrate BP using a semiconductor process. Each of the pixel circuits PXC may include at least one transistor. In addition, each of the pixel circuits PXC may include at least one capacitor.

[0182] The pixel circuit PXC of each pixel PX can be electrically connected to the first electrode PXE1 of the corresponding pixel PX. Each of the pixel circuits PXC can apply a first pixel voltage (e.g., a high-potential pixel voltage) to the first electrode PXE1 connected thereto.

[0183] The first electrode PXE1 of the pixel PX can be disposed on the backplane substrate BP. In an embodiment, the first electrode PXE1 can be a pad electrode PDE (or bonding electrode) connected to each light-emitting element LE. The first electrode PXE1 can be a single-layer or multi-layer electrode including at least one conductive material. In an embodiment, each first electrode PXE1 can connect the pixel circuit PXC and the light-emitting element LE of the corresponding pixel PX.

[0184] At least one light-emitting element LE can be disposed on the first electrode PXE1 of each pixel PX. The light-emitting element LE can be disposed or bonded to each of the first electrodes PXE1. As an example, the light-emitting element LE of each pixel PX can be disposed or bonded to the first electrode PXE1 such that the contact electrode CTE is bonded to the first electrode PXE1 of the corresponding pixel PX. The light-emitting element LE of each pixel PX can emit light by a voltage applied to the first electrode PXE1 and the second electrode PXE2 of the corresponding pixel PX.

[0185] As in the Figures 1 to 6 described embodiments, each light-emitting element LE can include a semiconductor layer EPI and a multiple film MLF surrounding the semiconductor layer EPI. As an example, as Figures 1 to 6 shown, each light-emitting element LE can include a semiconductor layer EPI having a first semiconductor layer SCL1, a light-emitting layer EML, and a second semiconductor layer SCL2, a multiple insulating film MLO including a first insulating film INF1, a second insulating film INF2, and a third insulating film INF3 sequentially surrounding the side surfaces of the semiconductor layer EPI, a low refractive index film LRL surrounding the multiple insulating film MLO and having a thickness greater than that of the multiple insulating film MLO, and a reflective film RFL surrounding the low refractive index film LRL and including a metal. In an embodiment, the light-emitting element LE can further include a protective film PRL surrounding the reflective film RFL. In an embodiment, each light-emitting element LE can further include a contact electrode CTE.

[0186] Each light-emitting element LE can be disposed such that the surface (e.g., Figure 1 or Figure 6 the second bottom surface S2 in Figure 1 or Figure 6The first bottom surface S1) therein faces the upper portion where the second electrode PXE2 is located. In an embodiment, the first electrode PXE1 may be formed as a reflective electrode including a metal or the like having a high reflectivity, and the second electrode PXE2 may be formed as a transparent or semi-transparent electrode. Thus, the light generated from the light-emitting element LE can be emitted to the upper portion of the display panel 100 by transmitting through the surface (e.g., the first bottom surface S1) where the first semiconductor layer SCL1 is located and the second electrode PXE2. The arrangement direction of the light-emitting element LE or the emission direction of the light from the light-emitting element LE and the display panel 100 may vary according to the embodiment.

[0187] In an embodiment, the first pixel PX1, the second pixel PX2, and the third pixel PX3 may include light-emitting elements LE that emit lights of different colors. As an example, the light-emitting element LE of the first pixel PX1, the light-emitting element LE of the second pixel PX2, and the light-emitting element LE of the third pixel PX3 may be a first-color light-emitting diode (e.g., a red light-emitting diode) that emits light of the first color, a second-color light-emitting diode (e.g., a green light-emitting diode) that emits light of the second color, and a third-color light-emitting diode (e.g., a blue light-emitting diode) that emits light of the third color, respectively.

[0188] In an embodiment, at least one insulating film may be provided around the light-emitting element LE. As an example, an organic film ORL may be provided around the light-emitting element LE. In an embodiment, the organic film ORL may be a filler filled between the light-emitting elements LE. In an embodiment, the organic film ORL may be formed to have substantially the same height or a similar height as the light-emitting element LE, thereby reducing the step caused by the light-emitting element LE. The organic film ORL may include an organic insulating material. For example, the organic film ORL may include an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, or other organic insulating materials.

[0189] The second electrode PXE2 may be provided on the light-emitting element LE. In an embodiment, the second electrode PXE2 of the pixel PX may be provided on the light-emitting element LE and the organic film ORL, and may be formed as a common electrode CME connected to each other, but is not limited thereto. In an embodiment, the second electrode PXE2 may be provided on the light-emitting element LE to be electrically connected to the first semiconductor layer SCL1 of the light-emitting element LE.

[0190] The second electrode PXE2 may include a conductive material. In an embodiment, the second electrode PXE2 may be transparent or semi-transparent. Thus, the light generated from the light-emitting element LE can be transmitted through the second electrode PXE2 and emitted to the upper portion of the pixel PX.

[0191] The first capping layer CPL1 may be disposed on the second electrode PXE2. The first capping layer CPL1 may be entirely disposed in at least the display area DA and may entirely cover the first electrode PXE1, the light-emitting element LE, the organic film ORL, and the second electrode PXE2 disposed on the backplane substrate BP. In an embodiment, the first capping layer CPL1 may be an inorganic insulating film including at least one inorganic insulating material suitable for blocking moisture penetration. As an example, the first capping layer CPL1 may include silicon oxide, silicon nitride, aluminum oxide, titanium oxide, or other inorganic insulating materials.

[0192] Figure 19 is a schematic cross-sectional view showing a display panel 100 according to an embodiment. Figure 20 is a schematic cross-sectional view showing a display panel 100 according to an embodiment. For example, Figure 19 and Figure 20 show a cross-section of the display panel 100 corresponding to Figure 16 the line X1-X1', and show a schematic cross-section of the first pixel PX1, the second pixel PX2, and the third pixel PX3 adjacent to each other in the first direction DR1. Compared with the Figure 17 and Figure 18 embodiments, the display panel 100 according to the Figure 19 and Figure 20 embodiments further includes additional configurations disposed on the first capping layer CPL1.

[0193] In addition to Figures 1 to 18 this, referring to Figure 19 and Figure 20 , the display panel 100 may further include a wavelength conversion layer QDL and a color filter. For example, the display panel 100 may further include a wavelength conversion layer QDL and a partition wall PW disposed on the first capping layer CPL1, a second capping layer CPL2 disposed on the wavelength conversion layer QDL and the partition wall PW, a first outer coating OC1 disposed on the second capping layer CPL2, a color filter (e.g., a first color filter CF1, a second color filter CF2, and a third color filter CF3) disposed on the first outer coating OC1, and a second outer coating OC2.

[0194] The partition wall PW may separate or define a light-emitting region where the wavelength conversion layer QDL is disposed. For example, the partition wall PW may include an opening corresponding to the light-emitting region of the pixel PX and may surround the light-emitting region.

[0195] In an embodiment, the partition wall PW may be formed to be relatively thick to provide a space in which the wavelength conversion layer QDL is formed. For example, the thickness of the partition wall PW may be in the range of about 1 μm to about 10 μm, respectively. In an embodiment, the partition wall PW may include an organic insulating material (e.g., epoxy resin, acrylic resin, cardo resin, imide resin, or other organic insulating materials). In an embodiment, the partition wall PW may further include a light-blocking material. As an example, the partition wall PW may include a dye or pigment having light-blocking properties.

[0196] The wavelength conversion layer QDL may be disposed in the light-emitting region of the pixel PX separated by the partition wall PW. The wavelength conversion layer QDL may convert light of a specific color emitted from the light-emitting element LE of each pixel PX into light of another color, or may transmit light of a specific color emitted from the light-emitting element LE without converting the light into light of another color.

[0197] In an embodiment, the wavelength conversion layer QDL may include a first wavelength conversion pattern WCL1 provided to the first pixel PX1, a second wavelength conversion pattern WCL2 provided to the second pixel PX2, and a light-transmitting pattern TPL provided to the third pixel PX3. The first wavelength conversion pattern WCL1, the second wavelength conversion pattern WCL2, and the light-transmitting pattern TPL may be disposed above the light-emitting element LE to overlap with the light-emitting element LE of the first pixel PX1, the light-emitting element LE of the second pixel PX2, and the light-emitting element LE of the third pixel PX3, respectively.

[0198] The first wavelength conversion pattern WCL1 may convert light of a specific color (e.g., blue light) emitted from the light-emitting element LE of the first pixel PX1 into light of a first color (e.g., red light). The light of the first color converted by the first wavelength conversion pattern WCL1 may transmit through the first color filter CF1, etc., and be emitted to the outside of the first pixel PX1 (e.g., to the upper part of the display panel 100).

[0199] The first wavelength conversion pattern WCL1 may include a first base resin BRS1 and first wavelength conversion particles WCP1. In an embodiment, the first wavelength conversion pattern WCL1 may further include a scatterer SCP.

[0200] The first base resin BRS1 may include a light-transmitting organic material. As an example, the first base resin BRS1 may include epoxy resin, acrylic resin, cardo resin, imide resin, etc.

[0201] The first wavelength conversion particle WCP1 can convert the light emitted from the light-emitting element LE of the first pixel PX1 into light of a first color (e.g., red light). In an embodiment, the first wavelength conversion particle WCP1 can be a quantum dot (e.g., a red quantum dot), a quantum rod, a fluorescent material, or a phosphorescent material, but is not limited thereto.

[0202] The scatterer SCP disposed in the first wavelength conversion pattern WCL1 can scatter the light emitted from the light-emitting element LE of the first pixel PX1 in random directions. The scatterer SCP can have a refractive index different from that of the first base resin BRS1 and form an optical interface with the first base resin BRS1. For example, the scatterer SCP can be a light-scattering particle. In an embodiment, the scatterer SCP can be a metal oxide particle or an organic particle, but is not limited thereto.

[0203] The second wavelength conversion pattern WCL2 can convert the light of a specific color (e.g., blue light) emitted from the light-emitting element LE of the second pixel PX2 into light of a second color (e.g., green light). The light of the second color converted by the second wavelength conversion pattern WCL2 can pass through the second color filter CF2, etc., and be emitted to the outside of the second pixel PX2 (e.g., emitted to the upper part of the display panel 100).

[0204] The second wavelength conversion pattern WCL2 can include a second base resin BRS2 and a second wavelength conversion particle WCP2. In an embodiment, the second wavelength conversion pattern WCL2 can further include a scatterer SCP.

[0205] The second base resin BRS2 can include a light-transmitting organic material. As an example, the second base resin BRS2 can include an epoxy resin, an acrylic resin, a cardo resin, an imide resin, etc. In an embodiment, the second base resin BRS2 can include the same material as the first base resin BRS1, but is not limited thereto.

[0206] The second wavelength conversion particle WCP2 can convert the light emitted from the light-emitting element LE of the second pixel PX2 into light of a second color (e.g., green light). In an embodiment, the second wavelength conversion particle WCP2 can be a quantum dot (e.g., a green quantum dot), a quantum rod, a fluorescent material, or a phosphorescent material, but is not limited thereto.

[0207] The scatterer SCP disposed in the second wavelength conversion pattern WCL2 can scatter the light emitted from the light-emitting element LE of the second pixel PX2 in random directions. The scatterer SCP can have a refractive index different from that of the second base resin BRS2 and form an optical interface with the second base resin BRS2. For example, the scatterer SCP can be a light-scattering particle. In an embodiment, the scatterer SCP can be a metal oxide particle or an organic particle, but is not limited thereto.

[0208] The transmissive pattern TPL can transmit incident light. For example, the transmissive pattern TPL can directly transmit the light (e.g., blue light) emitted from the light-emitting element LE of the third pixel PX3. The transmissive pattern TPL can include a third base resin BRS3 and a scatterer SCP dispersed in the third base resin BRS3.

[0209] The third base resin BRS3 can include a light-transmissive organic material. As an example, the third base resin BRS3 can include an epoxy resin, an acrylic resin, a cardo resin, an imide resin, etc. In an embodiment, the third base resin BRS3 can include the same material as at least one of the first base resin BRS1 and the second base resin BRS2, but is not limited thereto.

[0210] The scatterer SCP disposed in the transmissive pattern TPL can scatter the light emitted from the light-emitting element LE of the third pixel PX3 in random directions. The scatterer SCP can have a refractive index different from that of the third base resin BRS3 and form an optical interface with the third base resin BRS3. For example, the scatterer SCP can be light-scattering particles. In an embodiment, the scatterer SCP can be metal oxide particles or organic particles, but is not limited thereto. In an embodiment, the scatterer SCPs disposed in the first wavelength conversion pattern WCL1, the second wavelength conversion pattern WCL2, and the transmissive pattern TPL can be particles of the same material or type, but is not limited thereto.

[0211] The second capping layer CPL2 can be disposed on the wavelength conversion layer QDL and the partition wall PW. The second capping layer CPL2 can cover the wavelength conversion layer QDL and the partition wall PW and can protect the wavelength conversion layer QDL and the partition wall PW from moisture or impurities. In an embodiment, the second capping layer CPL2 can include at least one inorganic insulating material. In an embodiment, the second capping layer CPL2 can include the same material as the first capping layer CPL1, but is not limited thereto.

[0212] In an embodiment, the first outer coating OC1 can be disposed on the second capping layer CPL2. The first outer coating OC1 can be entirely disposed in the display area DA and can have a flat surface. In an embodiment, the first outer coating OC1 can include a light-transmissive organic material. For example, the first outer coating OC1 can include an epoxy resin, an acrylic resin, a cardo resin, an imide resin, etc.

[0213] The color filter can be disposed on the first outer coating OC1. For example, the first color filter CF1, the second color filter CF2, and the third color filter CF3 can be disposed on the first outer coating OC1.

[0214] The first color filter CF1 may be provided to the first pixel PX1 to overlap with the light-emitting element LE and / or the first wavelength conversion pattern WCL1 of the first pixel PX1. The second color filter CF2 may be provided to the second pixel PX2 to overlap with the light-emitting element LE and / or the second wavelength conversion pattern WCL2 of the second pixel PX2. The third color filter CF3 may be provided to the third pixel PX3 to overlap with the light-emitting element LE and / or the transmissive pattern TPL of the third pixel PX3.

[0215] The first color filter CF1, the second color filter CF2, and the third color filter CF3 may selectively transmit light corresponding to the color or wavelength band to be emitted from each pixel PX and may absorb light of different colors or different wavelength bands. For example, the first color filter CF1, the second color filter CF2, and the third color filter CF3 may selectively transmit light of a first color, light of a second color, and light of a third color, respectively, and may absorb light of different colors. In an embodiment, the first color filter CF1, the second color filter CF2, and the third color filter CF3 may be a red color filter, a green color filter, and a blue color filter, respectively, but are not limited thereto.

[0216] The second outer coating OC2 may be disposed on the color filter. The second outer coating OC2 may be entirely disposed in the display area DA and may have a flat surface. In an embodiment, the second outer coating OC2 may include a light-transmissive organic material. For example, the second outer coating OC2 may include an epoxy resin, an acrylic resin, a cardo resin, an imide resin, etc. In an embodiment, the second outer coating OC2 may include the same material as the first outer coating OC1, but is not limited thereto.

[0217] According to Figures 14 to 20 an embodiment of the display device 10 may include a pixel PX, and the pixel PX includes a light-emitting element LE according to Figures 1 to 6 at least one of the embodiments of Figures 7 to 13 or a light-emitting element LE manufactured according to the embodiments of

[0218] Figure 21 is a schematic view showing a virtual reality device 1 including a display device 10_1 according to an embodiment.

[0219] Referring to Figure 21 , the virtual reality device 1 according to an embodiment may be a glasses-type device. The virtual reality device 1 according to an embodiment may include a display device 10_1, a left-eye lens 10a, a right-eye lens 10b, a support frame 20, spectacle frame legs 30a and 30b, a reflection member 40, and a display device accommodation part 50.

[0220] Figure 21 shows a virtual reality device 1 including temple arms 30a and 30b, but the virtual reality device 1 according to the embodiment can also be applied to a head-mounted display including a headband that can be worn on the head to replace the temple arms 30a and 30b. For example, the virtual reality device 1 according to the embodiment is not limited to Figure 21 the form shown in, and can be applied to various other electronic devices in various forms.

[0221] The display device accommodation part 50 can accommodate the display device 10_1 and the reflection member 40. The image displayed on the display device 10_1 can be reflected by the reflection member 40 and provided to the user's right eye through the right eye lens 10b. Therefore, the user can view the virtual reality image displayed on the display device 10_1 through the right eye.

[0222] Figure 21 shows the display device accommodation part 50 provided at the right distal end of the support frame 20, but the embodiment is not limited thereto. For example, the display device accommodation part 50 can be provided at the left distal end of the support frame 20. The image displayed on the display device 10_1 can be reflected by the reflection member 40 and provided to the user's left eye through the left eye lens 10a. Therefore, the user can view the virtual reality image displayed on the display device 10_1 through the left eye. In other embodiments, the display device accommodation part 50 can be provided at both the left distal end and the right distal end of the support frame 20. The user can view the virtual reality image displayed on the display device 10_1 through both the left eye and the right eye.

[0223] Figure 22 is a schematic diagram showing a smart device including a display device 10_2 according to an embodiment.

[0224] Referring to Figure 22 , the display device 10_2 according to the embodiment can be applied to a smart watch 2 which is one of the smart devices. The planar shape of the clock display part of the smart watch 2 can follow the planar shape of the display device 10_2. For example, when the display device 10_2 according to the embodiment has a circular or oval planar shape, the clock display part of the smart watch 2 can have a circular or oval planar shape. In other embodiments, when the display device 10_2 according to the embodiment has a quadrilateral planar shape, the clock display part of the smart watch 2 can have a quadrilateral planar shape. However, the embodiment is not limited thereto, and the clock display part of the smart watch 2 may not follow the planar shape of the display device 10_2.

[0225] Figure 23It is a schematic diagram showing the instrument panel and the center instrument panel of a vehicle including display devices 10_a, 10_b, 10_c, 10_d, and 10_e according to an embodiment. Figure 23 A vehicle to which the display devices 10_a, 10_b, 10_c, 10_d, and 10_e according to an embodiment can be applied is shown.

[0226] Reference Figure 23 , the display devices 10_a, 10_b, and 10_c according to an embodiment can be applied to the instrument panel of a vehicle, to the center instrument panel of a vehicle, or to a center information display (CID) provided on the instrument panel of a vehicle. In other embodiments, the display devices 10_d and 10_e according to an embodiment can be applied to an in-vehicle mirror display to replace the side view mirror of a vehicle.

[0227] Figure 24 It is a schematic diagram showing a transparent display device including a display device 10_3 according to an embodiment.

[0228] Reference Figure 24 , the display device 10_3 according to an embodiment can be applied to a transparent display device. The transparent display device can transmit light while displaying an image IM. Therefore, a user located in front of the transparent display device can not only view the image IM displayed on the display device 10_3, but also view an object RS or a background located behind the transparent display device. In the case where the display device 10_3 is applied to a transparent display device, the display panel 100 can include a light-transmitting portion capable of transmitting light, or can be formed on a substrate member made of a material capable of transmitting light.

[0229] At the end of the detailed description, those skilled in the art will understand that many changes and modifications can be made to the embodiments without substantially departing from the principles of the present disclosure. Therefore, the disclosed embodiments of the present disclosure are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. Light-emitting element, including: The semiconductor layer comprises: a first semiconductor layer; a light emitting layer; and The second semiconductor layer, a multiple insulating film including a first insulating film, a second insulating film and a third insulating film sequentially surrounding the side surface of the semiconductor layer; a low refractive index film surrounding the multiple insulating films and having a thickness greater than that of the multiple insulating films; and A reflective film surrounds the low refractive index film and includes metal.

2. The light-emitting element according to claim 1, wherein The first insulating film includes a material having a dissociation energy in a range of 7 eV to 9 eV.

3. The light-emitting element according to claim 1, wherein The first insulating film includes at least one of ZrO 2 , SiO 2 , HfO 2 , Ta 2 O 5 , and La 2 O 3 .

4. The light-emitting element according to claim 1, wherein Each of the first insulating film and the third insulating film includes at least one of ZrO 2 and HfO 2 , and The second insulating film includes at least one of Al 2 O 3 and SiO 2 .

5. The light-emitting element according to claim 1, wherein The first insulating film, the second insulating film and the third insulating film include M1O2 type oxide, M22O3 type oxide and M3O2 type oxide, respectively, and M1, M2 and M3 are each a metal material.

6. The light-emitting element according to claim 5, wherein Each of the first insulating film and the third insulating film includes at least one of ZrO2, SiO2, HfO2, GeO2, TiO2, and TeO2, and The second insulating film includes at least one of Al2O3, Y2O3, La2O3, Ce2O3, Lu2O3, Sc2O3 and Yb2O3.

7. The light-emitting element according to claim 1, wherein The first insulating film, the second insulating film, and the third insulating film each have a thickness in a range of 0.5 nm to 5 nm.

8. The light-emitting element according to claim 1, wherein A total of a thickness of the first insulating film, a thickness of the second insulating film, and a thickness of the third insulating film is 10 nm or less.

9. The light-emitting element according to claim 1, wherein The multiple insulating films and the low refractive index film constitute a multiple composite film between the semiconductor layer and the reflective film, The thickness of the multiple composite film satisfies the range of Formula 1: [Formula 1] In Formula 1, t is the thickness of the multiple composite film, λ is the light emission wavelength of the light emitting layer, and n is the composite refractive index of the multiple composite film.

10. The light emitting element according to claim 1, wherein The low refractive index film includes SiO2.

11. The light emitting element according to claim 1, wherein The reflective film includes at least one of aluminum, molybdenum, titanium, copper, silver, magnesium, platinum, palladium, gold, nickel, neodymium, iridium, and chromium.

12. The light emitting element according to claim 1, wherein The reflective film has a thickness in the range of 30 nm to 200 nm.

13. The light emitting element according to claim 1, wherein The semiconductor layer has a width in the range of 0.5 μm to 10 μm.

14. The light emitting element according to claim 1, further comprising: A protective film surrounds the reflective film.

15. The light emitting element according to claim 14, further comprising: A contact electrode is disposed on the semiconductor layer, The multiple insulating films, the low refractive index film, the reflective film and the protective film further surround the side surface of the contact electrode.

16. The light emitting element according to claim 1, wherein The side surface of the semiconductor layer has an inclined surface inclined with respect to a first bottom surface of the semiconductor layer.

17. Display equipment, including: a first electrode; a second electrode; as well as A light emitting element is electrically connected between the first electrode and the second electrode, wherein the light emitting element comprises: The semiconductor layer comprises: a first semiconductor layer; a light emitting layer; and The second semiconductor layer, a multiple insulating film including a first insulating film, a second insulating film and a third insulating film sequentially surrounding the side surface of the semiconductor layer; a low refractive index film surrounding the multiple insulating films and having a thickness greater than that of the multiple insulating films; and A reflective film surrounds the low refractive index film and includes metal.

18. The display device according to claim 17, wherein: The light emitting element further includes a protective film surrounding the reflective film.

19. A method for manufacturing a light emitting element, the method comprising: forming a first semiconductor layer, a light emitting layer, and a second semiconductor layer in sequence on a substrate; etching the first semiconductor layer, the light emitting layer and the second semiconductor layer; sequentially forming a multi-insulating film including a first insulating film, a second insulating film and a third insulating film, a low refractive index film having a thickness greater than that of the multi-insulating film, and a reflective film including a metal on the substrate, the first semiconductor layer, the light emitting layer and the second semiconductor layer; as well as By etching the multiple insulating films, the low refractive index film, and the reflective film, a multiple film surrounding the side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer is formed.

20. The method according to claim 19, further comprising: forming a protective film on the reflective film before etching the multiple insulating films, the low refractive index film and the reflective film, The multiple films are formed of at least six films including the multiple insulating films, the low refractive index film, the reflective film, and the protective film.

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