Light-emitting device structure capable of being controlled by regions

Abstract

The invention relates to a light-emitting device structure capable of being controlled by regions, which at least comprises two independent regions, one independent region at least comprises two light-emitting units, and an isolation groove is arranged between the light-emitting units; no isolation groove exists between the light-emitting units in the other independent area; the two areas are connected through electrodes to achieve independent light emitting or simultaneous light emitting. The first electrode is internally connected with a second electrode, the second electrode is externally connected with a third electrode, and the third electrode is internally connected with a fourth electrode, so that the light-emitting units in the marginal area emit light simultaneously; the fifth electrode is internally connected with a sixth electrode to realize luminescence in the middle area; when the electrodes of the edge area and the middle area are connected at the same time, simultaneous light emitting is achieved, and the isolation grooves do not emit light. According to the invention, independent light emission in different areas can be realized, light emission can be realized simultaneously, the controllability of the device is improved, and the device is wider in application; short-distance illumination and long-distance illumination are achieved at the same time, and the illumination range and the visual field are expanded.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor light-emitting diodes, and particularly to a light-emitting device structure with area-divided control. Background Art

[0002] Existing high-voltage light-emitting diodes emit light integrally. That is, to ensure the output power, when a given current is applied, all the series-connected light-emitting units emit light simultaneously, and area-divided and adjustable light emission cannot be achieved. The present invention designs a light-emitting device structure with area-divided control, which can achieve independent light emission in different areas or simultaneous light emission, increasing the adjustability of the device and making the device more widely applicable. Summary of the Invention

[0003] Based on the technical problems existing in the background art, the present invention proposes a light-emitting device structure with area-divided control, enabling short-distance and long-distance illumination to be achieved simultaneously, and expanding the illumination range and field of view.

[0004] The light-emitting device structure with area-divided control proposed by the present invention includes at least two separate areas. One of the separate areas includes at least two light-emitting units, and there are isolation grooves between the light-emitting units; there are no isolation grooves between the light-emitting units in the other separate area;

[0005] The two areas are connected by electrodes to achieve independent light emission or simultaneous light emission; specifically as follows:

[0006] Edge area light emission: The first electrode is internally connected to the second electrode, the second electrode is externally connected to the third electrode, and the third electrode is internally connected to the fourth electrode to achieve simultaneous light emission of the light-emitting units in the edge area;

[0007] Middle area light emission: The fifth electrode is internally connected to the sixth electrode to achieve light emission in the middle area;

[0008] When the electrodes in the edge area and the middle area are connected simultaneously, simultaneous light emission is achieved, where the isolation grooves do not emit light, and the horizontal blank area does not emit light due to internal wiring problems.

[0009] Preferably, one of the separate areas includes light-emitting unit A and light-emitting unit B, and there are isolation grooves between the light-emitting units;

[0010] In each light-emitting unit, there is also a first conductive layer that forms an ohmic contact with the first semiconductor layer, a reflective layer that is electrically connected to the first conductive layer, and a second conductive layer that is electrically connected to the reflective layer;

[0011] In each light-emitting unit, there is also a depression that penetrates the first semiconductor layer and the active layer and extends into the second semiconductor layer, and a third conductive layer that is electrically connected to the second semiconductor layer through the depression;

[0012] The third conductive layer of light-emitting unit A forms an electrical connection with the second conductive layer of light-emitting unit B to connect the light-emitting units in series;

[0013] There is a first insulating layer between the partial surfaces of the first conductive layer and the reflective layer;

[0014] A second insulating layer covering the surface of the reflective layer, and the area of the reflective layer surface without the first insulating layer is covered by the second insulating layer;

[0015] At the series connection position of the light-emitting units, there is a third insulating layer between the partial surfaces of the third conductive layer of light-emitting unit A and the second conductive layer of light-emitting unit B;

[0016] A fourth insulating layer covering the surface of the third conductive layer, in contact with partial surfaces of the third insulating layer, isolating light-emitting unit A from light-emitting unit B;

[0017] The first conductive layer, the reflective layer, the second conductive layer, electrode A, and the third conductive layer together form light-emitting unit A;

[0018] The third conductive layer bridges light-emitting unit B, and light-emitting unit B is composed of the third conductive layer, the second conductive layer, the reflective layer, the first conductive layer, and electrode B;

[0019] The fourth insulating layer is connected to the substrate through a bonding layer to form a high-voltage chip structure, and the substrate serves as the bonding surface for packaging.

[0020] Preferably, another separate area light-emitting unit includes;

[0021] A first conductive layer forming an ohmic contact with the first semiconductor layer, a reflective layer electrically connected to the first conductive layer, a second conductive layer electrically connected to the reflective layer; an electrode A electrically connected to the second conductive layer; the first conductive layer, the reflective layer, the second conductive layer, and electrode A together form the first electrical connection layer;

[0022] A depression penetrating the first semiconductor layer and the active layer and extending into the second semiconductor layer, and a third conductive layer electrically connected to the second semiconductor layer through the depression; the third conductive layer is electrically connected to a part of the second conductive layer; the third conductive layer, the second conductive layer, and electrode B together form the second connection layer;

[0023] There is a first insulating layer between the partial surfaces of the first conductive layer and the reflective layer;

[0024] A second insulating layer covering the surface of the reflective layer, and the area of the reflective layer surface without the first insulating layer is covered by the second insulating layer;

[0025] A third insulating layer covering the sidewall of the depression and one side of the first electrical connection layer;

[0026] A fourth insulating layer covering the surface of the third conductive layer and in contact with a partial surface of the third insulating layer;

[0027] The fourth insulating layer is connected to the substrate through a bonding layer to form a high-voltage chip structure, and the substrate serves as the bonding surface for packaging.

[0028] Preferably, the light-emitting units all adopt light-emitting devices composed of a first semiconductor layer, a second semiconductor layer, and an active layer; the active layer is located between the first semiconductor layer and the second semiconductor layer.

[0029] Preferably, when there is no common positive electrode between the first electrode and the fifth electrode, the area of the lateral lightless region is large; when the first electrode and the fifth electrode share a common positive electrode, the area of the lateral lightless region is significantly reduced, and the area of the lightless region decreases by 3% to 15%.

[0030] Preferably, the reflective layer is a multi-layer structure; the second conductive layer, the third conductive layer, electrode A, electrode B, and the bonding layer are multi-layer metal structures.

[0031] The beneficial effects in the present invention are as follows: Through the chip structure design, controllable independent light emission in the middle region and the edge region is achieved. Among them, the edge region includes a series of serially connected light-emitting units, and the middle region can be an independent light-emitting unit. The middle region and the edge region together form a new device with controllable light emission. It can achieve independent light emission in different regions or simultaneous light emission, increasing the controllability of the device and making the device more widely applicable; enabling short-distance and long-distance lighting to be achieved simultaneously, expanding the lighting range and field of view. Description of the Drawings

[0032] Figure 1 It is a schematic structural diagram of one of the light-emitting regions of a light-emitting device structure with controllable sub-region proposed by the present invention;

[0033] Figure 2 It is a schematic structural diagram of another light-emitting region of a light-emitting device structure with controllable sub-region proposed by the present invention;

[0034] Figure 3 It is a diagram of Embodiment 1 of the light-emitting region layout;

[0035] Figure 4 It is a diagram of Embodiment 2 of the light-emitting region layout;

[0036] Figure 5 It is a diagram of Embodiment 3 of the light-emitting region layout;

[0037] Figure 6 It is a diagram of Embodiment 4 of the light-emitting region layout.

[0038] In the figure: 1. First semiconductor layer; 2. Second semiconductor layer; 3. Active layer; 4. First conductive layer; 5. Reflective layer; 6. Second conductive layer; 7. Third conductive layer; 8. First insulating layer; 9. Second insulating layer; 10. Third insulating layer; 11. Fourth insulating layer; 12. Bonding layer; 13. Substrate; 14. First electrode; 15. Second electrode; 16. Third electrode; 17. Fourth electrode; 18. Fifth electrode; 19. Sixth electrode. Detailed implementation manners

[0039] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments.

[0040] Referring to Figure 1-2 , a light-emitting device structure with separable area control includes at least two separate areas. The light-emitting units all adopt a light-emitting device composed of a first semiconductor layer 1, a second semiconductor layer 2, and an active layer 3; the active layer 3 is located between the first semiconductor layer 1 and the second semiconductor layer 2.

[0041] One of the separate areas includes at least two light-emitting units, and there are isolation grooves between the light-emitting units; there are no isolation grooves between the light-emitting units in the other separate area;

[0042] The two areas are connected by electrodes to achieve independent light emission or simultaneous light emission; specifically as follows:

[0043] Edge area light emission: The first electrode 14 is internally connected to the second electrode 15, the second electrode 15 is externally connected to the third electrode 16, and the third electrode 16 is internally connected to the fourth electrode 17 to achieve simultaneous light emission of the light-emitting units in the edge area;

[0044] Middle area light emission: The fifth electrode 18 is internally connected to the sixth electrode 19 to achieve light emission in the middle area;

[0045] When the electrodes in the edge area and the middle area are connected simultaneously, simultaneous light emission is achieved. Among them, the isolation grooves do not emit light, and the horizontal blank area does not emit light due to internal wiring problems. When there is no common positive electrode between the first electrode and the fifth electrode, the area of the horizontal non-light-emitting area is large (refer to Figure 3 and Figure 5 ); when the first electrode and the fifth electrode share a common positive electrode, the area of the horizontal non-light-emitting area is greatly reduced (refer to Figure 4 and Figure 6 ), and the area of the non-light-emitting area decreases by 3% - 15%.

[0046] One of the separate areas includes a light-emitting unit A and a light-emitting unit B, and there are isolation grooves between the light-emitting units;

[0047] In each light-emitting unit, there is also a first conductive layer 4 that forms an ohmic contact with the first semiconductor layer 1, a reflective layer 5 that is electrically connected to the first conductive layer 4, and a second conductive layer 6 that is electrically connected to the reflective layer 5;

[0048] In each light-emitting unit, there is also a depression that penetrates the first semiconductor layer 1 and the active layer 3 and extends into the second semiconductor layer 2, and a third conductive layer 7 that is electrically connected to the second semiconductor layer 2 through the depression;

[0049] The third conductive layer 7 of the light-emitting unit A is electrically connected to the second conductive layer 6 of the light-emitting unit B to connect the light-emitting units in series;

[0050] There is a first insulating layer 8 between partial surfaces of the first conductive layer 4 and the reflective layer 5;

[0051] A second insulating layer 9 covers the surface of the reflective layer 5, and the area of the reflective layer 5 without the first insulating layer 8 is covered by the second insulating layer 9;

[0052] At the series connection position of the light-emitting units, there is a third insulating layer 10 between partial surfaces of the third conductive layer 7 of the light-emitting unit A and the second conductive layer 6 of the light-emitting unit B;

[0053] A fourth insulating layer 11 covers the surface of the third conductive layer 7, is in contact with partial surfaces of the third insulating layer 10, and isolates the light-emitting unit A from the light-emitting unit B;

[0054] The first conductive layer 4, the reflective layer 5, the second conductive layer 6, the electrode A, and the third conductive layer 7 together form the light-emitting unit A;

[0055] The third conductive layer bridges the light-emitting unit B, and the light-emitting unit B is composed of the third conductive layer 7, the second conductive layer 6, the reflective layer 5, the first conductive layer 4, and the electrode B together;

[0056] The fourth insulating layer 11 is connected to the substrate 13 through the bonding layer 12 to form a high-voltage chip structure, and the substrate 13 serves as the bonding surface for packaging.

[0057] Another separate area light-emitting unit includes;

[0058] A first conductive layer 4 that forms an ohmic contact with the first semiconductor layer 1, a reflective layer 5 that is electrically connected to the first conductive layer 4, a second conductive layer 6 that is electrically connected to the reflective layer 5; an electrode A that is electrically connected to the second conductive layer 6; the first conductive layer 4, the reflective layer 5, the second conductive layer 6, and the electrode A together form the first electrical connection layer;

[0059] It penetrates the first semiconductor layer 1 and the active layer 3, extends into the recess inside the second semiconductor layer 2, and the third conductive layer 7 that forms an electrical connection with the second semiconductor layer 2 through the recess; the third conductive layer 7 forms an electrical connection with a part of the second conductive layer 6; the third conductive layer 7, the second conductive layer 6, and the electrode B together form the second electrical connection layer;

[0060] There is a first insulating layer 8 between the partial surfaces of the first conductive layer 4 and the reflective layer 5;

[0061] The second insulating layer 9 covers the surface of the reflective layer 5, and the area where there is no first insulating layer 8 on the surface of the reflective layer 5 is covered by the second insulating layer 9;

[0062] The third insulating layer 10 covers the side wall of the recess and one side of the first electrical connection layer;

[0063] The fourth insulating layer 11 covers the surface of the third conductive layer 10 and is in contact with a partial surface of the third insulating layer 10;

[0064] The fourth insulating layer 11 is connected to the substrate 13 through the bonding layer 12 to form a high-voltage chip structure, and the substrate 13 serves as the bonding surface for packaging.

[0065] In the present invention, Figures 3-6 Several embodiments are listed. Among them, the pattern of the middle region can be circular, square or other regular patterns. Only one of them is listed in the embodiment. Similarly, the pattern of the edge region can also be other regular patterns, and only one of them is listed in the embodiment.

[0066] As mentioned above, it is only the preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and should be covered within the protection scope of the present invention.

Claims

1. A light-emitting device structure that can be controlled in different regions, comprising at least two separate regions, characterized in that: One of the separate regions includes at least two light-emitting units, and there is an isolation groove between the light-emitting units; and the light-emitting units in the other separate region have no isolation grooves between them; The two regions are connected by electrodes to achieve independent or simultaneous light emission; the details are as follows: Light emission in the edge region: the first electrode (14) is internally connected to the second electrode (15), the second electrode (15) is externally connected to the third electrode (16), and the third electrode (16) is internally connected to the fourth electrode (17), so that the light-emitting units in the edge region emit light simultaneously; The middle area emits light: the fifth electrode (18) is internally connected to the sixth electrode (19), so that the middle area emits light; When the electrodes in the edge area and the middle area are connected at the same time, simultaneous light emission is achieved, wherein the isolation groove does not emit light, and the lateral blank area does not emit light due to internal wiring problems.

2. A light-emitting device structure capable of being controlled in different regions according to claim 1, characterized in that: One of the separate regions includes a light emitting unit A and a light emitting unit B, and an isolation groove is provided between the light emitting units; Each light-emitting unit further comprises a first conductive layer (4) forming an ohmic contact with the first semiconductor layer (1), a reflective layer (5) forming an electrical connection with the first conductive layer (4), and a second conductive layer (6) forming an electrical connection with the reflective layer (5); Each light-emitting unit also includes a recess that penetrates the first semiconductor layer (1) and the active layer (3) and extends into the second semiconductor layer (2), and a third conductive layer (7) that is electrically connected to the second semiconductor layer (2) through the recess; The third conductive layer (7) of the light-emitting unit A is electrically connected to the second conductive layer (6) of the light-emitting unit B, so that the light-emitting units are connected in series; A first insulating layer (8) is present between the first conductive layer (4) and a portion of the surface of the reflective layer (5); A second insulating layer (9) covering the surface of the reflective layer (5), and an area on the surface of the reflective layer (5) where the first insulating layer (8) is not present is covered with the second insulating layer (9); At the series connection position of the light-emitting units, a third insulating layer (10) is present between the third conductive layer (7) of the light-emitting unit A and a portion of the surface of the second conductive layer (6) of the light-emitting unit B; A fourth insulating layer (11) covering the surface of the third conductive layer (7), contacting a portion of the surface of the third insulating layer (10), and isolating the light-emitting unit A from the light-emitting unit B; The first conductive layer (4), the reflective layer (5), the second conductive layer (6), the electrode A, and the third conductive layer (7) together constitute a light-emitting unit A; The third conductive layer bridges the light-emitting unit B, and the light-emitting unit B is composed of the third conductive layer (7), the second conductive layer (6), the reflective layer (5), the first conductive layer (4), and the electrode B; The fourth insulating layer (11) is connected to the substrate (13) via a bonding layer (12) to form a high-voltage chip structure, and the substrate (13) serves as a bonding surface for packaging.

3. The light emitting device structure capable of being controlled in different regions according to claim 1, characterized in that: Another separate area lighting unit includes; A first conductive layer (4) forming an ohmic contact with the first semiconductor layer (1), a reflective layer (5) forming an electrical connection with the first conductive layer (4), a second conductive layer (6) forming an electrical connection with the reflective layer (5); an electrode A forming an electrical connection with the second conductive layer (6); the first conductive layer (4), the reflective layer (5), the second conductive layer (6), and the electrode A together forming a first electrical connection layer; A third conductive layer (7) that penetrates the first semiconductor layer (1) and the active layer (3) and extends to a recess inside the second semiconductor layer (2) and is electrically connected to the second semiconductor layer (2) through the recess; the third conductive layer (7) is electrically connected to a portion of the second conductive layer (6); the third conductive layer (7), the second conductive layer (6) and the electrode B together form a second electrical connection layer; A first insulating layer (8) is present between the first conductive layer (4) and a portion of the surface of the reflective layer (5); A second insulating layer (9) covering the surface of the reflective layer (5), and an area on the surface of the reflective layer (5) where the first insulating layer (8) is not present is covered with the second insulating layer (9); A third insulating layer (10) covering the side wall of the recess and one side of the first electrical connection layer; A fourth insulating layer (11) covering the surface of the third conductive layer (10) and contacting a portion of the surface of the third insulating layer (10); The fourth insulating layer (11) is connected to the substrate (13) via a bonding layer (12) to form a high-voltage chip structure, and the substrate (13) serves as a bonding surface for packaging.

4. The light emitting device structure capable of being controlled in different regions according to claim 1, characterized in that: The light-emitting units all adopt a light-emitting device composed of a first semiconductor layer (1), a second semiconductor layer (2) and an active layer (3); the active layer (3) is located between the first semiconductor layer (1) and the second semiconductor layer (2).

5. The light emitting device structure capable of being controlled in different regions according to claim 1, characterized in that: When the first electrode (14) and the fifth electrode (18) do not have a common positive pole, the area of ​​the transverse dark zone is large; when the first electrode (14) and the fifth electrode (18) have a common positive pole, the area of ​​the transverse dark zone is greatly reduced, and the area of ​​the dark zone decreases by 3% to 15%.

6. A light-emitting device structure capable of being controlled in different regions according to claim 2 or 3, characterized in that: The reflective layer (5) is a multi-layer structure; the second conductive layer (6), the third conductive layer (7), the electrode A, the electrode B, and the bonding layer (12) are a multi-layer metal structure.

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