Laser processing apparatus and method of cutting substrate

Abstract

The invention relates to a laser processing apparatus and a method of cutting a substrate. According to an embodiment, a laser processing apparatus includes: a laser generating unit that generates a base laser beam; a Gaussian beam conversion unit that converts the base laser beam into an initial Gaussian beam; a phase mask part which converts the initial Gaussian beam into a primary mixed beam; and an objective lens unit that converts the primary mixed light beam into a final mixed light beam including a first light beam continuously applied as a Bessel-like light beam to form a cutting line on the mother substrate and a second light beam continuously applied as a Bessel-like light beam to form a cutting line on the mother substrate, and supplies the final mixed light beam to the mother substrate. The second beam forms a processing line as a Gaussian beam which is located on the surface of the mother substrate and is not located on the whole of the mother substrate.

Description

Technical Field

[0001] The present disclosure relates to a laser processing apparatus and a method for cutting a substrate using the same. Background Art

[0002] Display devices, such as liquid crystal display (LCD) devices and organic light emitting diode (OLED) devices, are devices for displaying screens. Such display devices are used in various electronic devices, such as mobile phones, navigators, digital cameras, e-books, portable game consoles, or various terminals.

[0003] On the other hand, display devices such as organic light emitting display devices may have flexible characteristics or a bendable structure. Flexible display devices may be classified into bendable display devices, foldable display devices, rollable display devices, etc., according to their uses or forms. Such flexible display devices use plastic or thin glass substrates, and thus have flexible characteristics and can be bent or folded. Summary of the Invention

[0004] An embodiment is for providing a laser processing apparatus and a method for cutting a substrate, which can cut a substrate using a laser and further process an edge of the substrate or can cut and / or process a protective film, etc.

[0005] A laser processing apparatus according to an embodiment includes: a laser generation unit that generates a basic laser beam; a Gaussian beam conversion unit that converts the basic laser beam into an initial Gaussian beam; a phase mask unit that converts the initial Gaussian beam into a primary hybrid beam; and an objective lens unit that converts the primary hybrid beam into a final hybrid beam and provides it to a mother substrate, the final hybrid beam including a first beam and a second beam, the first beam being continuously applied as a Bessel-like beam to form a cutting line on the mother substrate, and the second beam being located on the surface of the mother substrate and forming a processing line as a Gaussian beam that is not entirely located on the mother substrate.

[0006] It may be that the final hybrid beam includes 4 second beams located around the first beam, and the second beam is a beam obtained by moving the axis of the initial Gaussian beam.

[0007] It may be that the phase mask unit includes a diffractive optical element (DOE), an axicon lens, or a spatial light modulator (SLM).

[0008] Optionally, the laser processing apparatus further includes: at least one mirror unit, located between the laser generation unit and the Gaussian beam conversion unit, and changing the optical path of the basic laser beam and transmitting it to the Gaussian beam conversion unit.

[0009] Optionally, the objective lens unit includes: a first objective lens for adjusting the focus of the primary mixed beam; a second objective lens for adjusting the magnification of the primary mixed beam whose focus has been adjusted; and a filtering unit including at least one filter, and changing the primary mixed beam into the final mixed beam.

[0010] Optionally, the objective lens unit further includes: an imaging unit for measuring the final mixed beam, and the imaging unit collects two-dimensional plane photos to obtain a 3D image.

[0011] Optionally, the objective lens unit further includes: a phase mask projection unit for receiving the primary mixed beam provided by the phase mask unit; and an observation unit located between the first objective lens and the second objective lens and capable of confirming the primary mixed beam whose focus has been adjusted.

[0012] Optionally, irradiate the mother substrate with the final mixed beam in a direction, so as to cut the mother substrate into substrates along the cutting line, and perform wet etching along the processing line to form a structure in which the edges of the substrates are chamfered.

[0013] Optionally, a protective film is attached to the mother substrate, and the final mixed beam is irradiated on the mother substrate in a direction, so as to cut the mother substrate into substrates along the cutting line, and process the protective film along the processing line.

[0014] A method for cutting a substrate according to an embodiment includes: a step of generating a combined beam including a first beam and at least one second beam; a step of irradiating the combined beam onto a mother substrate while moving it in a first direction; a step of separating the mother substrate into respective substrates; and a step of performing wet etching on the separated substrates to form chamfered edges, the mother substrate is cut by the first beam, and the edges of the substrates form chamfered edges along a processing line formed by the second beam.

[0015] Optionally, the first beam is continuously applied as a Bessel-like beam to form a cutting line on the mother substrate, the second beam is a Gaussian beam located on the surface of the mother substrate and not covering the entire mother substrate, and the positions of the cutting line and the processing line are different.

[0016] It may be that the combined beam includes four of the second beams located on the periphery of the first beam, and the second beam is a beam obtained by shifting the axis of the original Gaussian beam.

[0017] It may be that the step of generating the combined beam includes: a step of providing a Gaussian beam; a step of converting it into a combined beam of the first beam and the second beam; a step of setting the amplitude and phase based on a target value; a step of generating a primary mixed beam by replacing the amplitude with that of the Gaussian beam; a step of measuring the beam; and a step of adjusting the amplitude and phase according to the target value.

[0018] It may be that the step of converting it into a combined beam of the first beam and the second beam includes: a step of converting the Gaussian beam into the first beam through a phase mask; and a step of generating a combined beam of the first beam and at least one Gaussian beam.

[0019] It may be that the etching solution for the wet etching includes at least one of HF, HNO3, KOH, or NaOH.

[0020] A method of cutting a substrate according to an embodiment includes a step of generating a combined beam including a first beam and at least one second beam; a step of irradiating the combined beam onto a mother substrate while moving it in a first direction; and a step of separating the mother substrate into respective substrates, where the mother substrate includes a protective film, the mother substrate is cut by the first beam, and the protective film is processed by the second beam.

[0021] It may be that the first beam is continuously applied as a Bessel-like beam to form a cutting line in the mother substrate, the second beam forms a processing line located in the protective film and not in the entirety of the mother substrate, and the positions of the cutting line and the processing line are different.

[0022] It may be that the combined beam includes four of the second beams located on the periphery of the first beam, and the second beam is a Gaussian beam obtained by shifting the axis of the original Gaussian beam.

[0023] It may be that the step of generating the combined beam includes: a step of providing a Gaussian beam; a step of converting it into a combined beam of the first beam and the second beam; a step of setting the amplitude and phase based on a target value; a step of generating a primary mixed beam by replacing the amplitude with that of the Gaussian beam; a step of measuring the beam; and a step of adjusting the amplitude and phase according to the target value.

[0024] It may be that the step of converting into the combined beam of the first beam and the second beam includes: the step of converting the Gaussian beam into the first beam through a phase mask; and the step of generating the combined beam of the first beam and at least one Gaussian beam.

[0025] According to an embodiment, it may include continuously applying a laser, so that a first beam capable of cutting a substrate and a second beam located at the periphery of the first beam and only in a partial area can be obtained, and the second beam is used to further process a protective film or the like located on the edge of the substrate or on the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 FIG. schematically shows a laser processing apparatus according to an embodiment.

[0027] Figure 2 FIG. is a flowchart showing a method of generating a laser according to an embodiment.

[0028] Figure 3 FIG. more specifically shows Figure 2 a part of the flowchart in

[0029] Figure 4 FIG. shows a part of a laser processing apparatus according to an embodiment.

[0030] Figures 5 to 9 FIG. shows the characteristics of a laser according to an embodiment.

[0031] Figure 10 FIG. shows a method of cutting a substrate using a laser beam according to an embodiment.

[0032] Figure 11 FIG. shows the steps of cutting a substrate and performing post-processing according to an embodiment.

[0033] Figure 12 FIG. shows the steps of transferring a protective film together while cutting a substrate according to an embodiment.

[0034] Figure 13 FIG. shows the steps of cutting a substrate in a comparative example.

[0035] (Description of Reference Numerals)

[0036] 1: Laser processing apparatus 10: Laser generation unit

[0037] 11, 12: Mirror units 20: Gaussian beam conversion unit

[0038] 30: Phase mask unit 40: Objective lens unit

[0039] 41: Phase mask projection unit 42: First objective lens

[0040] 43: Second objective lens 44: Filter section

[0041] 45: Imaging section 46: Observation section

[0042] GLA, GLAs: Mother substrate SUB: Substrate

[0043] GB: Gaussian beam HB: Primary mixed beam

[0044] HBF: Final mixed beam MB: First beam

[0045] MBL: Cutting line AGB: Second beam

[0046] AGBL: Processing line PF: Protective film

[0047] POA: Region generating gas AA: Pattern

[0048] CS - G1, CS - G2: Quadrilateral Detailed implementation manners

[0049] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those with ordinary knowledge in the technical field to which the present invention pertains can easily implement it. The present invention can be implemented in various different forms, but is not limited to the embodiments described herein.

[0050] To clearly illustrate the present invention, parts irrelevant to the description are omitted, and the same or similar components are labeled with the same reference numerals throughout the specification.

[0051] In addition, the sizes and thicknesses of the respective structures shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown in the drawings. In the drawings, to clearly express multiple layers and regions, the thicknesses are enlarged. In addition, in the drawings, for convenience of explanation, the thicknesses of some layers and regions are exaggeratedly shown.

[0052] In addition, when a part such as a layer, film, region, plate, component, etc. is "above" or "on" another part, it includes not only the case where it is "directly above" another part, but also the case where there is another part in between. On the contrary, when a part is "directly above" another part, it means that there is no other part in between. In addition, the case of being "above" or "on" the part serving as the reference means the case of being above or below the part serving as the reference, and does not necessarily mean the case of being "above" or "on" the side opposite to the direction of gravity.

[0053] In addition, throughout the specification, when a part is described as "including" a certain component, unless there is a particularly contrary description, it means that other components are not excluded but may also be included.

[0054] In addition, throughout the specification, when it is described as "on a plane", it means the situation when viewing the object part from above, and when it is described as "in a cross-section", it means the situation when viewing a cross-section obtained by vertically cutting the object part from the side.

[0055] In addition, throughout the specification, when it is described as "connected", it not only means the situation where two or more components are directly connected, but also includes the situation where two or more components are indirectly connected through other components, physical connection, or electrical connection, as well as the situation where parts that are substantially integrated but are referred to by different names according to their positions or functions are connected to each other.

[0056] In addition, throughout the specification, when a part such as a wiring, layer, film, region, plate, or component "extends in the first direction or the second direction", it not only means a straight line shape in that direction, but also includes a structure that extends comprehensively along the first direction or the second direction, and also includes a structure that extends while being bent in part, having a zigzag structure, or including a curved structure.

[0057] In addition, electronic devices including display devices, display panels, etc. described in the specification (e.g., mobile phones, TVs, monitors, notebook computers, etc.) or electronic devices including display devices, display panels, etc. manufactured by the manufacturing methods described in the specification are not excluded from the scope of rights of this specification.

[0058] Hereinafter, Figure 1 observe the structure of the entire laser processing apparatus.

[0059] Figure 1 is a diagram schematically showing a laser processing apparatus according to an embodiment.

[0060] According to Figure 1 an embodiment, the laser processing apparatus 1 includes a laser generation unit 10, mirror units 11, 12, a Gaussian Beam conversion unit 20, a Phase mask unit 30, and an objective lens unit 40. According to the embodiment, at least one of the mirror units 11, 12, etc. may not be included, and separate parts may also be further added.

[0061] Specifically, observe the laser processing apparatus 1 according to Figure 1 an embodiment as follows.

[0062] The laser processing apparatus 1 can use the Gaussian beam conversion unit 20 and the phase mask unit 30 to convert the laser generated in the laser generation unit 10 into the light of the coherent combination of the first beam and the second beam and apply it to the mother substrate GLA so as to cut the mother substrate GLA while further processing or separating the protective film or the like located on the edge or on the substrate of the substrate. Here, the first beam is continuously applied as a Bessel-like beam to cut the mother substrate GLA, and the second beam can be a Gaussian beam located only in a part of the region to process the protective film or the like located on the edge or on the substrate of the substrate.

[0063] Specifically, the laser generation unit 10 is a part that generates the basic laser beam that is finally suitable for conversion into the first beam and the second beam. In this embodiment, the laser generation unit 10 can be an infrared laser generation unit, have a wavelength of 1030 nm or less, and can generate a laser beam having a pulse duration (or also referred to as a pulse length) of 300 femtoseconds (fs) or 10 picoseconds (ps). However, the laser generation unit 10 can generate laser beams with various characteristics according to the embodiment.

[0064] The basic laser beam generated in the laser generation unit 10 is incident on the Gaussian beam conversion unit 20 while being reflected by the first mirror unit 11 and the second mirror unit 12 to be converted into the Gaussian beam GB. The mirror units 11 and 12 are configured to accurately transfer the basic laser beam output from the laser generation unit 10 to the incident area of the Gaussian beam conversion unit 20. The number and position of the mirror units 11 and 12 can be various, and the mirror units 11 and 12 can also be omitted according to the embodiment.

[0065] The Gaussian beam conversion unit 20, as a part that converts the basic laser beam output from the laser generation unit 10 into the initial Gaussian beam GB, can include a plurality of lenses or include a beam expander.

[0066] The initial Gaussian beam GB converted in the Gaussian beam conversion unit 20 is incident on the phase mask unit 30 and is converted into a primary mixed beam HB including the first beam and the second beam. Here, the primary mixed beam HB can be the light of the coherent combination of the first beam and the second beam. Here, the phase mask unit 30 can be a diffractive optical element (DOE), an axicon lens, or a spatial light modulator (SLM).

[0067] The first hybrid beam HB converted in the phase mask section 30 is converted into a final hybrid beam HBF by the objective lens section 40 and supplied to the master substrate GLA. The objective lens section 40 may include a plurality of lenses and may also have a configuration such as Figure 4 as described.

[0068] The final hybrid beam HBF may be a combined light formed by the coherent combination of a first beam and a second beam. In Figure 1 the enlarged view of the master substrate GLA, it may be that a continuous cutting line MBL that traverses the cross-section of the master substrate GLA is formed by the first beam in the final hybrid beam HBF, and two processing lines AGBL that are discontinuously located on the upper and lower surfaces of the cross-section of the master substrate GLA are formed by the second beam in the final hybrid beam HBF. Referring to Figure 11 , the edges of the substrate SUB separated from the master substrate GLA can be further processed through the two processing lines AGBL. On the other hand, referring to Figure 12 , when separating the substrate SUB from the master substrate GLA, a protective film (PF in reference to Figure 12 ) etc. can also be cut together. At this time, the protective film etc. can be cut at a position different from the cutting line MBL of the master substrate GLA.

[0069] Here, the first beam is continuously applied as a Bessel-like beam to form a continuous cutting line MBL to cut the master substrate GLA, and the second beam can form the processing line AGBL only at the end of the cross-section of the master substrate GLA with a Gaussian beam, thereby processing the edges of the truncated substrate (refer to Figure 11 ) or processing the protective film etc. located on the substrate (refer to Figure 12 ). The first beam needs to be continuous for a length greater than the thickness of the master substrate GLA, so it can be continuously uninterrupted with a value of 100 μm or more in the z direction. The second beam only needs to be located in a part, so it can have a length of more than 0 μm and 2 μm or less in the z direction. As a result, in Figure 1 , the processing line AGBL can have a length of 2 μm or less in the z direction.

[0070] Hereinafter, through Figure 2 and Figure 3 specifically observe the method of forming the hybrid beam. First, observe the method of forming the overall hybrid beam through Figure 2 .

[0071] Figure 2 is a flowchart showing a method of generating a laser according to an embodiment.

[0072] Figure 2As a method of forming a hybrid beam used in a method of cutting a substrate, if a step of supplying a final hybrid beam generated in Figure 2 is added, the substrate can be cut.

[0073] Referring to Figure 2 , a method of forming a hybrid beam that constitutes a method of cutting a substrate may include a step (S10) of supplying a Gaussian beam GB, a step (S20) of converting it into a combined beam of a first beam and a second beam, a step (S30) of setting an amplitude and a phase based on a target value, a step (S40) of replacing the amplitude with the amplitude of the Gaussian beam to generate a primary hybrid beam HB, a step (S50) of measuring the beam passing through the objective lens, a step (S60) of adjusting the amplitude and the phase according to the target value, and a step (S70) in which the generation of the final hybrid beam HBF is completed. In Figure 2 of each step, S20, S30, and S40 may be performed in the Figure 1 phase mask unit 30, and S50 and S60 may be performed in the objective lens unit 40.

[0074] The step (S10) of supplying the Gaussian beam GB is a step of supplying the Gaussian beam GB converted in the Figure 1 Gaussian beam conversion unit 20 to the phase mask unit 30. Here, the Gaussian beam GB may have the Figure 5 configuration of the second column.

[0075] The Gaussian beam GB supplied to the phase mask unit 30 is converted into a combined beam of a first beam and a second beam (S20). Here, it may be that the combined beam is light that is a coherent combination of the first beam and the second beam and is defocused light, and it may be that the first beam is a Bessel-like beam and the second beam is a Gaussian beam.

[0076] Thereafter, the amplitude and the phase of the combined beam are set based on the target value (S30). Here, the amplitude and the phase of the first beam and the second beam may first use the set values (hereinafter also referred to as set values), and the amplitude and the phase may be changed or adjusted afterwards.

[0077] A specific embodiment of the step (S20) of converting into a combined beam and the step (S30) of setting the amplitude and the phase is shown in Figure 3 , and thus it is observed in more detail in Figure 3 .

[0078] The combined beam having the set amplitude and phase replaces the amplitude with the amplitude of the Gaussian beam and generates a primary hybrid beam HB (S40).

[0079] The generated primary mixed light beam HB is transmitted to Figure 1 the objective lens unit 40 of Figure 1 , and the light beam passing through the objective lens unit 40 can be measured (S50). It can be a step of finally checking whether the primary mixed light beam HB corresponds to a target value, and comparing the measured value with the target value to adjust the amplitude and phase (S60), thereby generating the final mixed light beam HBF (S70).

[0080] On the other hand, after comparing the measured value with the target value to adjust the amplitude and phase according to the embodiment (S60), the light beam can be re-measured (S50) and the step of checking whether it corresponds to the target value can be executed again.

[0081] Thereafter, if the generated final mixed light beam HBF is provided to the mother substrate GLA, the mother substrate GLA can be cut and separated into individual substrates SUB (refer to Figure 11 ). Therefore, on the basis of the steps of Figure 2 , if a step of further providing the final mixed light beam HBF to the mother substrate GLA is added, a method of cutting the substrate can be constituted.

[0082] Hereinafter, the step of converting into a combined light beam (S20) and the step of setting the amplitude and phase (S30) will be specifically observed. Figure 3 The step of converting into a combined light beam (S20) and the step of setting the amplitude and phase (S30).

[0083] Figure 3 is a flowchart showing a part of the flowchart of Figure 2 more specifically.

[0084] Referring to Figure 3 , the step of converting into a combined light beam (S20) may include a step of converting the Gaussian beam GB into a first light beam through a phase mask (S21), a step of generating a combined light beam of the first light beam and at least one Gaussian beam (S22), and a defocus step (S23). According to the embodiment, the defocus step (S23) may be located at other positions, for example, in front of the step of converting the Gaussian beam GB into a first light beam (S21) or in front of the step of generating a combined light beam (S22), or may also be included in the step of converting the Gaussian beam GB into a first light beam (S21) or the step of generating a combined light beam (S22) so as to perform defocus together with them.

[0085] On the other hand, the step of setting the amplitude and phase (S30) may include a step of adjusting the amplitude (S31) and a step of adjusting the phase (S32). According to the embodiment, the step of adjusting the amplitude (S31) and the step of adjusting the phase (S32) may be executed in one step. In addition, the step of adjusting the phase (S32) may also be executed before the step of adjusting the amplitude (S31).

[0086] Specifically observing the step (S20) of converting into a combined light beam according to an embodiment through mathematical expressions is as follows.

[0087] The initial Gaussian beam GB can be converted into a first light beam through Mathematical Expression 1 shown below.

[0088] (Mathematical Expression 1)

[0089] Bessel = exp(ik0rα)

[0090] Among them, Bessel is the first light beam, k0 and a are parameter values of a complex function, k0 can be a conical parameter as a parameter corresponding to the axicon lens for converting into the first light beam, and when the amplitude of the initial Gaussian beam GB is U0(x, y), r can be as shown in Mathematical Expression 2 below.

[0091] (Mathematical Expression 2)

[0092]

[0093] Among them, the axicon lens can correspond to the phase mask unit 30, and a diffractive optical element (DOE; diffractive optical element) or a spatial light modulator (spatial light modulator, SLM) can be used in addition to the axicon lens.

[0094] On the other hand, the defocus step (S23) can be performed through Mathematical Expression 3 as follows.

[0095] (Mathematical Expression 3)

[0096] Lens = exp(ik0r 2 / 2f0)

[0097] Among them, Lens is a mathematical expression for defocusing using a lens with a focal length of f0.

[0098] If the first light beam is defocused, it can be obtained by multiplying Mathematical Expression 1 and Mathematical Expression 3.

[0099] On the other hand, after moving the axis (off-axis) of the initial Gaussian beam GB, it can be converted into a second light beam in a dephased manner, and the off-axis movement can be performed through Mathematical Expression 4 below, and the dephasing can be performed through Mathematical Expression 5 below.

[0100] (Mathematical Expression 4)

[0101] Gauss = exp(ik0(r 2 / 2f0 + xθ x + yθ y ))

[0102] where θ x and θ y represent the angles of movement of each axis.

[0103] (Equation 5)

[0104]

[0105] where represents the phase difference of dephase.

[0106] The second light beam can include multiple ones, so the combined light beam of the first light beam and at least one second light beam can be as shown in the following Equation 6.

[0107] (Equation 6)

[0108] Final Field = (Bessel * Lens + ∑Gauss i * Dephase i )

[0109] where it can be that Final Field represents the combined light beam of the first light beam and the second light beam, and i corresponds to the number of the second light beams as a parameter corresponding to sigma (∑).

[0110] For the combined light beam of Equation 6, the steps of further setting the amplitude and phase can be performed (S30).

[0111] Thereafter, the combined light beam of Equation 6 with the set amplitude and phase can generate a primary hybrid beam HB by replacing the amplitude with the amplitude of the original Gaussian light beam (S40).

[0112] First, the combined light beam of Equation 6 can also be expressed as shown in the following Equation 7.

[0113] (Equation 7)

[0114] Final Field = A(x, y) * exp(i * Phase(x, y))

[0115] where Phase(x, y) is the phase value of the combined light beam (Final Field), and A(x, y) represents the amplitude. Therefore, if the amplitude in the combined light beam (Final Field) of Equation 7 is replaced with the amplitude of the Gaussian light beam (U0(x, y)), it is as shown in the following Equation 8.

[0116] (Mathematical formula 8)

[0117] Hybrid Beam = U0(x, y) + exp(i * Phase(x, y))

[0118] Among them, Hybrid Beam represents the first hybrid beam HB.

[0119] Comparing Mathematical formula 7 and Mathematical formula 8, it can be confirmed that although the amplitude is replaced, the phase value (Phase(x, y)) is the same.

[0120] Refer to Figure 3 , after generating the first hybrid beam HB (S40), the beam is measured (S50), and the amplitude and phase are adjusted according to the measurement value to generate the final hybrid beam HBF (S70).

[0121] The first hybrid beam HB generated by such a step in a method of simply changing the amplitude as in Mathematical formula 8 may not correspond to the target value, so it is clearly confirmed and adjusted. In fact, it may not be easy to implement the composite beam (FinalField) as in Mathematical formula 6 in reality. Therefore, in the embodiment of the present invention, after easily obtaining the first hybrid beam HB by changing the amplitude, the amplitude and phase are adjusted based on the measurement value to obtain the final hybrid beam HBF. Therefore, it has the advantage of obtaining the final hybrid beam HBF in a relatively simple manner.

[0122] Hereinafter, through an embodiment, that is, Figure 4 Specifically observe the structure of measuring the first hybrid beam HB and generating the final hybrid beam HBF and transmitting it to multiple master substrates GLAs.

[0123] Figure 4 is a diagram showing a part of a laser processing apparatus according to an embodiment.

[0124] In Figure 4 specifically shows Figure 1 the objective lens unit 40.

[0125] According to Figure 4 the embodiment of, the objective lens unit 40 may include a phase mask projection unit 41, a first objective lens 42, a second objective lens 43, a filtering unit 44, a camera unit 45, and an observation unit 46. According to the embodiment, the observation unit 46 may not be included.

[0126] The phase mask projection unit 41, as a light receiving unit that receives the first hybrid beam HB provided from the phase mask unit 30 into the objective lens unit 40, may be formed of a transparent material.

[0127] The first objective lens 42 may be an objective lens capable of focusing and may function to adjust the focus of the incident first hybrid beam HB. Refer toFigure 4 , the first objective lens 42 can be moved in the z-axis direction (refer to Figure 4 Mz), and the focal point can be changed thereby.

[0128] The observation unit 46 is a part that can confirm the primary mixed beam HB whose focal point is adjusted in the first objective lens 42, and can be omitted when the intermediate confirmation of the primary mixed beam HB is not required.

[0129] The second objective lens 43 can be a magnification lens. According to the embodiment, it can be a 50x magnification lens or a magnification lens capable of adjusting to various magnifications. The second objective lens 43 adjusts the magnification of the primary mixed beam HB whose focal point has been adjusted and outputs it.

[0130] The primary mixed beam HB whose focal point and magnification have been adjusted can be further converted into the final mixed beam HBF while passing through the filter unit 44. Here, the filter unit 44 can include at least one filter and can perform the function of removing unnecessary components when etching the mother substrate GLA.

[0131] The finally generated final mixed beam HBF is measured by the imaging unit 45, and when necessary, it can be further adjusted in amplitude and / or phase while being changed into the final mixed beam HBF with necessary characteristics.

[0132] On the other hand, in Figure 4 , a plurality of mother substrates GLAs are shown. According to the embodiment, it shows an embodiment in which a plurality of mother substrates GLAs can also be formed and cut together. That is, according to the embodiment, when the final mixed beam HBF has the characteristic of repeating at a certain interval, a plurality of mother substrates GLAs can also be cut together.

[0133] The imaging unit 45 and the observation unit 46 photograph the plane (XY plane) perpendicular to the z-axis, so a two-dimensional planar photo can be obtained. However, a 3D image can be obtained by collecting the XY plane photos obtained in this way in the z-axis direction. At this time, the 3D image can be obtained by collecting 100 or more and 500 or less XY plane photos at a distance of 500 μm in the z-axis direction. The XZ plane profile and YZ plane profile of the beam can also be obtained through the 3D image.

[0134] Next, through Figures 5 to 9 Observe the XZ plane profile and YZ plane profile of the beam obtained in this way.

[0135] Figures 5 to 9 is a diagram showing the characteristics of a laser according to an embodiment.

[0136] First, in Figure 5 , in order to specifically observe the content of forming the combined beam described above, in Figure 1the phase mask unit 30 and / or Figure 2 and Figure 3 specifically observe the phase mask used in the step (S20) of generating the combined beam and the XZ plane profile thereof.

[0137] Referring to Figure 5 the second column of , in the case of the Gaussian beam GB, the phase mask may not include any pattern, and at this time, the XZ plane profile of the Gaussian beam GB is also shown.

[0138] Referring to Figure 5 the third column of , the phase mask used in the step (S21) of converting the Gaussian beam GB into the first beam and the XZ plane profile of the first beam are also shown. The phase mask for forming the first beam may include a pattern having concentric circles, and it can be confirmed that the first beam has a structure that extends longer in the z-axis direction compared to the Gaussian beam GB.

[0139] Referring to Figure 5 the fourth column of , the phase mask for defocusing the first beam and the XZ plane profile of the defocused first beam are also shown. Referring to the content described above, the defocusing of the first beam can be obtained by multiplying Equation 1 and Equation 3.

[0140] The phase mask for defocusing the first beam has concentric circles, but includes a pattern having a part where the pitch of the included pattern is not constant, and it can be confirmed that the defocused first beam has a structure that extends longer in the z-axis direction than the first beam.

[0141] Figure 5 The fifth column and the sixth column of may correspond to the step (S22) of generating the combined beam of the first beam and at least one second beam. In Figure 5 the fifth column of , the combined beam of the first beam and one second beam is shown, and in Figure 5 the sixth column of , the combined beam of the first beam and four second beams is shown. Here, the second beam is formed narrowly in the z-axis direction and corresponds to the Gaussian beam shown in the second column of , but may be a beam with its position changed. Figure 5 the second column of

[0142] First, referring to Figure 5 the fifth column of , the phase mask for combining the first beam and one second beam has a pattern having two concentric circles, and may have a pattern with different sizes of the two concentric circles. Here, it may be that the pattern located at the center corresponds to the first beam, and the small concentric circle pattern corresponds to the second beam. The XZ plane profile of the combined beam of the first beam and one second beam is formed short in the z-direction around the first beam that extends long in the z-direction, and it can be confirmed that it is a structure where one second beam (Gaussian beam) located away from the central axis is present.

[0143] On the other hand, refer to Figure 5 In the sixth column, the phase mask for synthesizing the first beam and the four second beams has a pattern in which the patterns of the concentric circles are disconnected in a structure having one concentric circle. Here, the one concentric circle structure corresponds to the first beam, and the concentric circles are changed to a disconnected pattern due to the four patterns for generating the second beams. The XZ plane profile of the synthesized beam synthesizing the first beam and the four second beams is formed short in the z direction around the first beam extending long in the z direction, and it can be confirmed that it is a structure where the four second beams (Gaussian beams) located away from the central axis are located.

[0144] Below, change Figure 5 The sixth column, that is, changing the phase mask used to synthesize the first beam and the four second beams and passing Figures 6 to 7 Observe the differences in the profiles of the resultant beams depending on them.

[0145] Figure 6 (A) and Figure 7 (A) shows the phase mask, Figure 6 (B) and Figure 7 (B) shows the YZ plane profile, Figure 6 (C) and Figure 7 (C) shows the XZ plane profile, Figure 6 (D) and Figure 7 (D) shows a 3D profile obtained by collecting the previous YZ plane profile and XZ plane profile.

[0146] Reference Figure 6 (A) and Figure 7 (A) shows that the patterns of the two phase masks are slightly different. As a result, it can be confirmed that the positions of the four second beams included in the composite beam are relatively different. In this way, if the pattern of the phase mask is adjusted, the positions of the four second beams (Gaussian beams) can be changed, and further processing can be performed when using it to cut a mother substrate, etc. The specific processing example is shown in FIG. Figure 11 as well as Figure 12 This will be described later.

[0147] on the other hand, Figure 8 (A) and Figure 8 (B) shows an enlarged view of Figure 6 The XZ plane profile and the YZ plane profile are shown in (C) and (B) respectively.

[0148] exist Figure 8 (A) and Figure 8 In (B), the first beam MB and the second beam AGB (Gaussian beam) located around the first beam are clearly indicated in the XZ plane profile and the YZ plane profile.

[0149] In Figure 8 the XZ plane profile of (A), four second light beams AGB are clearly shown, but referring to Figure 8 (B), in the YZ plane profile, only two second light beams AGB are clearly shown, and the two second light beams AGB are only separated by the first light beam. When all four second light beams AGB can be seen in the YZ plane profile, the phase mask can be changed to Figure 7 (A) to form a combined light beam.

[0150] In addition, referring to Figure 8 (A) and Figure 8 (B), it can be confirmed that the first light beam MB has a length of 300 μm or less and a width of 2 μm or less (FWHM; full width at half maximum) in the z-axis direction, and has a structure that extends long. The first light beam can be a Bessel-like light beam and can be used to cut the mother substrate, so the minimum value of the length in the z-axis direction needs to be greater than the thickness of the mother substrate.

[0151] And the second light beam AGB can be a light beam in which a Gaussian light beam is set to be away from the central axis, and has a width of 2 μm or less (FWHM; full width at half maximum) in the z-axis direction. The second light beam can be a light beam that can perform further processing while cutting the mother substrate, and thus is formed into a length required for processing.

[0152] On the other hand, in Figure 9 it is shown that the simulation results and the actual measurement results are compared by the structure of the table, and all the profiles shown in Figure 9 are XY plane profiles.

[0153] In Figure 9 it is shown that the XY plane profiles at positions on the z-axis of 200 μm, -50 μm, -20 μm, +20 μm, and +50 μm are respectively simulated and measured.

[0154] Referring to Figure 9 the second column, when the z-axis position is -200 μm, it is shown that the first light beam and the second light beam do not exist normally, and there is a part with an overall circular structure.

[0155] Referring to Figure 9 the third column, when the z-axis position is -50 μm, it is shown that only the first light beam exists and the second light beam does not exist, and the profile with only the first light beam existing in the center part.

[0156] Referring to Figure 9From the fourth column, it can be known that when the z-axis position is -20 μm, the first beam and the second beams exist normally, but only 2 beams in the second beams exist, and the remaining 2 do not.

[0157] Referring to Figure 9 From the fifth column, it can be confirmed that when the z-axis position is +20 μm, the first beam and the remaining second beams exist normally.

[0158] Referring to Figure 9 From the sixth column, when the z-axis position is +50 μm, it shows that only the first beam exists and the second beam does not exist, and only the outline of the first beam exists in the central part.

[0159] Referring to Figure 9 , the first beam is continuously arranged at -50 μm and at +50 μm, and a part can also exist on both sides of it. On the other hand, it can be confirmed that 2 second beams exist near -20 μm and the remaining 2 exist near +20 μm.

[0160] Referring to Figure 9 , it can be known that the positions of the 4 second beams are separated into 2 each with the z-axis as the reference. If such a position difference is utilized, 2 of the second beams can process the upper surface of the substrate, and the remaining 2 can process the lower surface of the substrate. Regarding this, it will be observed in more detail in Figure 11 .

[0161] Hereinafter, an embodiment of further processing while cutting a substrate using the combined beam of the first beam and the second beam as described above will be observed. First, while considering the characteristics of the combined beam, observe the basic method of cutting the substrate by Figure 10 using the combined beam of the first beam and the second beam.

[0162] According to an embodiment, a method for cutting a substrate may include: a step of generating a combined beam including a first beam and at least one second beam; a step of irradiating the combined beam onto a mother substrate while moving it in a first direction; a step of separating the mother substrate into respective substrates; and a step of wet-etching the separated substrates to form chamfered edges. Here, the mother substrate is cut by the first beam, and the edges of the substrates can be formed into chamfered edges according to the processing lines formed by the second beam. The step of generating the combined beam can be formed by the steps described in Figure 2 and Figure 3 .

[0163] Specifically observe Figure 10 the embodiment.

[0164] Figure 10 is a diagram showing a method for cutting a substrate using a laser beam according to an embodiment.

[0165] InFigure 10 and (A) of Figure 10 is shown in (B) of Figure 7 the combined light beam, in Figure 10 (C) of shows a structure in which the mother substrate GLA is cut in two directions DR1 and DR2 by using the combined light beam. Here, the two directions DR1 and DR2 may be directions perpendicular to the z-axis direction, respectively.

[0166] Figure 10 (A) of is the combined light beam for etching the mother substrate GLA in the first direction DR1, Figure 10 (B) of is the combined light beam for etching the mother substrate GLA in the second direction DR2.

[0167] In Figure 10 and (A) of Figure 10 (B) of shows the first light beam MB and four second light beams AGB, and shows the quadrilaterals CS-G1 and CS-G2 with the four second light beams AGB arranged at both corners. Here, each of the quadrilaterals CS-G1 and CS-G2 forms a plane parallel to each of the etching directions DR1 and DR2, is arranged at a certain distance from the first light beam MB, and the width of each of the quadrilaterals CS-G1 and CS-G2 in the z-axis direction may correspond to the thickness of the mother substrate GLA. The first light beam MB corresponds to and is continuous with the thickness of the mother substrate GLA, so the mother substrate GLA can be cut, and the second light beam AGB is only located near the surface of the mother substrate GLA and is formed discontinuously throughout the thickness, so the surface of the mother substrate GLA can be processed without cutting.

[0168] On the other hand, the phase mask for forming the combined light beam of Figure 10 (A) of and the phase mask for forming the combined light beam of Figure 10 (B) of have the same pattern and can have a consistent relationship if rotated by 90 degrees. Therefore, in order to convert the combined light beam of Figure 10 (A) of into the combined light beam of Figure 10 (B) of can be converted by rotating the phase mask by 90 degrees.

[0169] Figure 10 (A) of the quadrilateral CS-G1 is a plane parallel in the first direction DR1. When the first light beam moves in the first direction DR1 and etches the mother substrate GLA, while being spaced apart from it by a certain distance and moving in the first direction DR1, the surface of the mother substrate GLA is processed and a certain depth is processed from it. Refer to Figure 10In (C), the solid lines extending in the first direction DR1 show the lines where the mother substrate GLA is etched by the first light beam, and the dotted lines on both sides of the solid lines show a part of the mother substrate GLA processed by the second light beam. Here, the dotted lines can process the entire upper surface and a part of the lower surface of the mother substrate GLA.

[0170] On the other hand, Figure 10 Regarding (B), the quadrilateral CS-G2 is a plane parallel in the second direction DR2. When the first light beam moves in the second direction DR2 while etching the mother substrate GLA, the surface of the mother substrate GLA is processed at a certain interval while moving in the second direction DR2 and a certain depth is processed therefrom. Refer to Figure 10 In (C), the solid lines extending in the second direction DR2 show the lines where the mother substrate GLA is etched by the first light beam, and the dotted lines on both sides of the solid lines show a part of the mother substrate GLA processed by the second light beam. Here, the dotted lines can process the entire upper surface and a part of the lower surface of the mother substrate GLA.

[0171] If, as Figure 6 shown in (B), in the case of using a light beam where a part of the second light beam is blocked by the first light beam in a specific direction, the dotted lines can be on both sides of the solid line, but different from Figure 10 in (C), the dotted lines can only process near one of the upper surface and the lower surface of the mother substrate GLA. Refer to Figure 6 Regarding (B), it can be that the height of the second light beam on the z-axis is different, and the second light beam with a higher height on the z-axis processes the periphery of the upper surface of the mother substrate, and the lower second light beam processes the periphery of the lower surface of the mother substrate.

[0172] In cutting the mother substrate, in order to reduce the roughness of the surface, it is necessary to provide a certain amount of energy as a whole for the thickness of the mother substrate. Refer to Figure 5 In the second and third columns of, the initial Gaussian beam provides energy concentrated in a part of the area. Therefore, in order to provide a certain amount of energy, it is more suitable to use a Bessel-like beam, that is, the first light beam, compared to directly using the initial Gaussian beam.

[0173] However, if it is not for cutting the mother substrate but only for processing a part of the area, it is difficult to use the first light beam as a Bessel-like beam. Here, it is suitable to use a Gaussian beam that moves the position in the same way as the second light beam. As a result, only the surface part of the mother substrate can be processed.

[0174] Hereinafter, through Figure 11 and Figure 12 more specifically observe an embodiment in which further processing is performed while etching the substrate with a combined beam of the first light beam and the second light beam.

[0175] According to an embodiment, a method of cutting a substrate may include: generating a combined beam including a first beam and at least one second beam; irradiating the combined beam onto a mother substrate while moving the combined beam in a first direction; and separating the mother substrate into respective substrates. Here, the mother substrate may include a protective film, the mother substrate is cut by the first beam, and the protective film is processed and patterned by the second beam. The step of generating the combined beam may be formed by the steps described in Figure 2 and Figure 3 .

[0176] First, observe the embodiment of Figure 11 .

[0177] Figure 11 is a diagram showing steps of cutting a substrate and performing post-processing according to an embodiment.

[0178] In Figure 11 , a cross-section of the mother substrate GLA and the substrate SUB separated after cutting the mother substrate GLA is shown.

[0179] Figure 11 (A) of Figure 10 shows, as in (C) of Figure 10 , a cutting line MBL by the first beam and a processing line AGBL by the second beam on the mother substrate GLA. The cutting line MBL is formed across the entire thickness of the mother substrate GLA, and the processing line AGBL is formed to a certain depth only from the upper and lower surfaces of the mother substrate GLA.

[0180] In order to align the position of the second beam with the surface of the mother substrate GLA, the second beam may be positioned on the surface by the following Mathematical Formula 9.

[0181] (Mathematical Formula 9)

[0182] dz = (H ± 4 * Zr) / n

[0183] Here, dz represents the distance between the second beams in the z-axis direction, H represents the thickness of the mother substrate, n represents the refractive index of the mother substrate, and Zr represents the Rayleigh length in air as the Rayleigh length of the Gaussian beam.

[0184] In the above Mathematical Formula 9, the distance (dz) between the second beams in the z-axis direction may satisfy the following Mathematical Formula 10 so as not to be located within the mother substrate.

[0185] (Mathematical Formula 10)

[0186] Dz > 4 * Zr

[0187] Mathematical Formula 9 and Mathematical Formula 10 may be preset in the step (S30) of setting the amplitude and phase based on the target value of Figure 2 .

[0188] On the other hand, according to an embodiment, in order to position the second light beam on the surface of the mother substrate GLA, the amplitude or phase can also be adjusted and set simultaneously.

[0189] In Figure 11 (B) shows a cross-section of the substrate SUB separated after cutting the mother substrate GLA. The cutting line MBL is cut and corresponds to the edge of the substrate SUB, and the processing line AGBL is provided at a certain distance from the edge of the substrate SUB.

[0190] Thereafter, as shown in (C) of Figure 11 , if the separated substrate SUB is placed in an etching solution for wet etching, while etching the substrate SUB, the etching solution also penetrates into the processing line AGBL and is etched, and at the same time, the edge of the substrate SUB can be formed into a notch structure (refer to (D) of Figure 11 ). Such a notch structure can be located only on the edge surface of the substrate SUB. For this reason, the second light beam has a length of 30% or more and 60% or less compared to the intensity of the first light beam, so that the mother substrate GLA can be prevented from being cut or broken in the processing line AGBL. Here, various etching solutions can be used according to the material of the mother substrate GLA. However, in the case of a glass substrate, an etching solution including at least one of HF, HNO3, KOH, or NaOH can be used. The etching rate near the processing line AGBL may be about 3 times faster than that of other parts, so that a structure with chamfered corners can be obtained as shown in (D) of Figure 11 .

[0191] On the other hand, the etched mother substrate GLA can have various thicknesses. However, in order to form a flexible glass substrate, the glass substrate can be formed thinly. At this time, the thickness of the glass substrate can have a value of 30 μm or more and 100 μm or less.

[0192] On the other hand, hereinafter, an embodiment in which a part of the thin film can be removed while observing the etched mother substrate GLA will be described. Figure 12

[0193] Figure 12 is a diagram showing the steps of transferring a protective film together while cutting a substrate according to an embodiment.

[0194] In Figure 12 , a cross-section of the mother substrate GLA and the substrate SUB is shown. A pattern AA is formed on the mother substrate GLA, and a protective film PF covering it is attached thereon. Here, the protective film PF can be a polymer film. In addition, the pattern AA can be a conductive pattern or a semiconductor pattern, and can also include an insulating layer located between the conductive pattern or the semiconductor pattern.

[0195] Reference Figure 12 In (A) of Figure 12 , when the combined light beam is applied to the mother substrate GLA, a cutting line MBL through the first light beam and a processing line AGBL through the second light beam are formed. Here, it is possible that the cutting line MBL is formed across the entire thickness of the mother substrate GLA, and the processing line AGBL is formed only on the protective film PF attached to the mother substrate GLA.

[0196] When the first light beam and the second light beam are applied to the protective film PF, gas can be generated by heat between the protective film PF and the mother substrate GLA through the energy of the light beam. In Figure 12 In (A) of Figure 12 , the region where gas can be generated is denoted as POA.

[0197] In order for the processing line AGBL to be formed only on the protective film PF, the mathematical formulas 9 and 10 described above can be used for setting.

[0198] Therefore, as Figure 12 In (B) of Figure 12 , when the mother substrate GLA is separated into substrates SUB along the cutting line MBL, the protective film PF also separates along the processing line AGBL and a part of the protective film PF is removed. Here, since there is a difference in the positions where the first light beam and the second light beam are applied, the edges of the substrate SUB and the protective film PF may not coincide and are spaced apart.

[0199] In Figure 12 An embodiment of patterning the protective film PF while cutting the mother substrate GLA is shown, but other parts besides the protective film PF can also be processed together.

[0200] On the other hand, a comparative example using a light beam without the second light beam is shown in Figure 13 Figure 13 .

[0201] Figure 13 Figure 13 is a diagram showing the steps of cutting the substrate in the comparative example.

[0202] Figure 13 As a diagram corresponding to (A) of Figure 12 Figure 12 , different from (A) of Figure 12 Figure 12 , there is no processing line AGBL, so that the protective film PF and the mother substrate GLA are both cut along the cutting line MBL. At this time, it can be known that in Figure 13 Figure 13 , the region POA where gas is generated by heat between the protective film PF and the mother substrate GLA through the energy of the light beam is formed larger than that in (A) of Figure 12 Figure 12 , and there may also be a problem that the substrate and the protective film PF are peeled off after cutting in the region POA where gas is generated.

[0203] Therefore, as Figure 12Etching with a composite beam including a second beam has the advantage that the protective film PF can be processed without being peeled off.

[0204] As described above, embodiments of the present invention have been described in detail. However, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concepts of the present invention defined in the appended claims also fall within the scope of the present invention.

Claims

1. A laser processing device, wherein: include: A laser generating unit for generating a basic laser beam; A Gaussian beam conversion unit, which converts the basic laser beam into an initial Gaussian beam; A phase mask section, which converts the initial Gaussian beam into a primary mixed beam; and The objective lens part converts the primary mixed light beam into a final mixed light beam and provides it to the mother substrate, The final mixed light beam includes the first light beam and the second light beam, The first light beam is continuously applied as a Bessel-like light beam to form a cutting line on the mother substrate, The second light beam forms a processing line as a Gaussian beam located on the surface of the mother substrate and not located on the entire mother substrate.

2. The laser processing device according to claim 1, wherein: The final mixed light beam includes four second light beams located around the first light beam, The second beam is a beam obtained by shifting the axis of the initial Gaussian beam.

3. The laser processing device according to claim 2, wherein: The phase mask portion includes a diffractive optical element, an axicon lens, or a spatial light modulator.

4. The laser processing device according to claim 2, wherein: The laser processing device further includes: at least one mirror portion, which is located between the laser generating portion and the Gaussian beam converting portion and changes the optical path of the fundamental laser beam and transmits it to the Gaussian beam converting portion.

5. The laser processing device according to claim 2, wherein: The objective lens unit comprises: A first objective lens, for adjusting the focus of the primary mixed light beam; a second objective lens, for adjusting the magnification of the primary mixed light beam whose focus is adjusted; and The filtering unit includes at least one filter and changes the primary mixed light beam into the final mixed light beam.

6. The laser processing device according to claim 5, wherein: The objective lens unit further includes: an imaging unit for measuring the final mixed light beam, The camera unit collects two-dimensional plane photos to obtain 3D images.

7. The laser processing device according to claim 6, wherein: The objective lens unit also includes: a phase mask projection section receiving the primary mixed light beam provided from the phase mask section; and The observation unit is located between the first objective lens and the second objective lens and is capable of checking the primary mixed light beam with the focus adjusted.

8. The laser processing device according to claim 2, wherein: irradiating the final mixed light beam along a direction to the mother substrate to cut the mother substrate into substrates along the cutting line, Wet etching is performed along the processing line to form a structure in which the edge of the substrate is chamfered.

9. The laser processing device according to claim 2, wherein: A protective film is attached on the mother substrate. irradiating the final mixed light beam along a direction to the mother substrate to cut the mother substrate into substrates along the cutting line, The protective film is processed along the processing line.

10. A method for cutting a substrate, wherein: include: The step of generating a composite light beam comprising a first light beam and at least one second light beam; The step of moving the synthetic light beam in a first direction while irradiating the mother substrate; The step of separating the mother substrate into individual substrates; as well as a step of wet etching the separated substrate to form a chamfered edge, The mother substrate is cut by the first light beam, The edge of the substrate forms a chamfered edge along a processing line formed by the second light beam.

11. The method for cutting a substrate according to claim 10, wherein: The first light beam is continuously applied as a Bessel-like light beam to form a cutting line on the mother substrate, The second light beam is a Gaussian light beam located on the surface of the mother substrate and not located on the entirety of the mother substrate, The position of the cutting line is different from the position of the processing line.

12. The method for cutting a substrate according to claim 11, wherein: The composite light beam includes four second light beams located around the first light beam, The second beam is a beam obtained by shifting the axis of the initial Gaussian beam.

13. The method for cutting a substrate according to claim 11, wherein: The steps of generating the composite light beam include: Step of providing a Gaussian beam; a step of converting the first light beam into a composite light beam of the first light beam and the second light beam; The step of setting the amplitude and phase based on the target value; The step of replacing the amplitude with the amplitude of the Gaussian beam to generate a primary mixed beam; the step of measuring the light beam; and The step to adjust the amplitude and phase according to the target value.

14. The method for cutting a substrate according to claim 13, wherein: The step of converting the first light beam and the second light beam into a composite light beam comprises: The step of converting the Gaussian beam into the first beam by a phase mask; and The step of generating a composite beam of said first beam and at least one Gaussian beam.

15. The method for cutting a substrate according to claim 10, wherein: The etching solution used for the wet etching includes at least one of HF, HNO 3 , KOH, or NaOH.

16. A method for cutting a substrate, wherein: include: The step of generating a composite light beam comprising a first light beam and at least one second light beam; The step of moving the synthetic light beam in a first direction while irradiating the mother substrate; as well as The step of separating the mother substrate into individual substrates, The mother substrate includes a protective film, The mother substrate is cut by the first light beam, The protective film is processed by the second light beam.

17. The method for cutting a substrate according to claim 16, wherein: The first light beam is continuously applied as a Bessel-like light beam to form a cutting line on the mother substrate, The second light beam forms an overall processing line located on the protective film and not located on the mother substrate, The position of the cutting line is different from the position of the processing line.

18. The method for cutting a substrate according to claim 17, wherein: The composite light beam includes four second light beams located around the first light beam, The second beam is a Gaussian beam obtained by shifting the axis of the initial Gaussian beam.

19. The method for cutting a substrate according to claim 17, wherein: The steps of generating the composite light beam include: Step of providing a Gaussian beam; a step of converting the first light beam into a composite light beam of the first light beam and the second light beam; The step of setting the amplitude and phase based on the target value; The step of replacing the amplitude with the amplitude of the Gaussian beam to generate a primary mixed beam; the step of measuring the beam; and The step to adjust the amplitude and phase according to the target value.

20. The method for cutting a substrate according to claim 19, wherein: The step of converting the first light beam and the second light beam into a composite light beam comprises: The step of converting the Gaussian beam into the first beam by a phase mask; and The step of generating a composite beam of said first beam and at least one Gaussian beam.

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