Polymer and luminescent device and display device containing same

Abstract

The embodiment of the invention relates to the field of display, in particular to a polymer as well as a light-emitting device and a display device comprising the same, and the structure of the polymer is as shown in a formula I. According to the invention, the transmission efficiency of carriers is effectively improved. # imgabs0 #

Description

Technical Field

[0001] This application relates to the field of display technologies, and particularly to a polymer, a light-emitting device including the same, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Due to their excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display, OLEDs have become the mainstream technology in the field of display technologies. QLEDs have the advantages of saturated emission light color, adjustable wavelength, low turn-on voltage, good solution processability, easy fine control of quantum dots, etc., and have high photoluminescence and electroluminescence quantum yields, and have become a strong competitor to OLEDs in recent years.

[0003] The structures of traditional OLED and QLED devices generally include an anode, a hole injection layer, a charge transport layer, a light functional layer, an electron transport layer, and a cathode. Under the action of an electric field, the holes generated by the anode and the electrons generated by the cathode of the optoelectronic device move, are respectively injected into the charge transport layer and the electron transport layer, and finally migrate to the light functional layer. When the two meet in the light functional layer, energy excitons are generated, thereby exciting the luminescent molecules to finally generate visible light.

[0004] However, the hole transport ability of the existing cross-linked hole transport materials is poor and needs to be further improved. Summary of the Invention

[0005] Based on this, embodiments of this application provide a polymer, a light-emitting device including the same, and a display device.

[0006] In order to solve the above technical problems, embodiments of this application provide a polymer, adopting the following technical solutions:

[0007] A polymer, the structure of the polymer is shown in Formula I:

[0008]

[0009] Among them, R1, R2, and R3 are each independently selected from at least one of hydrogen, deuterium, amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, cyano group, substituted or unsubstituted C1-C20 hydrocarbon group, substituted or unsubstituted C1-C20 hydrocarbon oxy group, substituted or unsubstituted cycloalkane group with 3-60 ring atoms, substituted or unsubstituted heterocycloalkane group with 3-60 ring atoms, substituted or unsubstituted aryl group with 5-60 ring atoms, substituted or unsubstituted heteroaryl group with 5-60 ring atoms, substituted or unsubstituted aryloxy group with 5-60 ring atoms, and substituted or unsubstituted heteroaryloxy group with 5-60 ring atoms; and at least one of the R1, the R2, and the R3 includes a quaternary phosphonium group;

[0010] The substituents of the substitution are selected from at least one of amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, and cyano group;

[0011] The heteroatoms in the heteroaryl group and the heteroaryloxy group are each independently selected from at least one of N, S, O, P, and Si, and the number of the heteroatoms is 1-20;

[0012] The degree of polymerization n of the polymer is n≥2.

[0013] Further, the degree of polymerization n of the polymer is n≥10; and / or,

[0014] The structure of the quaternary phosphonium group is shown in Formula II:

[0015]

[0016] Among them, R4, R5, and R6 are each independently selected from C1-C3 alkyl groups or C6-C18 aryl groups, and X is a halogen atom.

[0017] Further, the R4, the R5, and the R6 are each independently selected from C2-C3 alkyl groups or C8-C15 aryl groups; and / or,

[0018] The halogen atom is selected from at least one of fluorine, chlorine, bromine, and iodine.

[0019] Further, the structure of the polymer is selected from at least one of Formula C to Formula I-16;

[0020]

[0021]

[0022] In order to solve the above technical problems, the embodiment of the present application also provides a preparation method of a polymer, adopting the following technical solutions:

[0023] A method for preparing a polymer, comprising the following steps:

[0024] Providing a prepolymer and a quaternary phosphonium compound precursor solution;

[0025] Mixing the prepolymer and the quaternary phosphonium compound precursor solution, and performing a crosslinking reaction to obtain a polymer; wherein, the structure of the polymer is shown in Formula I:

[0026]

[0027] Wherein, R1, R2, and R3 are each independently selected from at least one of hydrogen, deuterium, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, substituted or unsubstituted C1-C20 hydrocarbon group, substituted or unsubstituted C1-C20 hydrocarbon oxy group, substituted or unsubstituted cycloalkyl group with 3-60 ring atoms, substituted or unsubstituted heterocycloalkyl group with 3-60 ring atoms, substituted or unsubstituted aryl group with 5-60 ring atoms, substituted or unsubstituted heteroaryl group with 5-60 ring atoms, substituted or unsubstituted aryloxy group with 5-60 ring atoms, and substituted or unsubstituted heteroaryloxy group with 5-60 ring atoms; and at least one of the R1, the R2, and the R3 includes a quaternary phosphonium group;

[0028] The substituent of the substitution is selected from at least one of amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, and cyano group;

[0029] The heteroatoms in the heteroaryl group and the heteroaryloxy group are each independently selected from at least one of N, S, O, P, and Si, and the number of the heteroatoms is 1-20;

[0030] The degree of polymerization n of the polymer is n≥2.

[0031] Furthermore, the prepolymer includes a fluorene derivative and a triphenylamine derivative; and / or,

[0032] The quaternary phosphonium compound precursor solution includes a precursor ionic group and a quaternary phosphonium compound reagent; and / or,

[0033] The temperature of the crosslinking reaction is 100°C to 250°C; and / or,

[0034] The time of the crosslinking reaction is 20 min to 60 min; and / or,

[0035] The degree of polymerization n of the polymer is n≥10; and / or,

[0036] The structure of the quaternary phosphonium group is shown in Formula II:

[0037]

[0038] Among them, R4, R5, and R6 are each independently selected from C1-C3 alkyl groups or C6-C18 aryl groups, and X is a halogen atom.

[0039] Furthermore, the precursor ion group is a cationic precursor group or an anionic precursor group; and / or,

[0040] R4, R5, and R6 are each independently selected from C2-C3 alkyl groups or C8-C15 aryl groups; and / or,

[0041] The halogen atom is selected from at least one of fluorine, chlorine, bromine, and iodine.

[0042] Furthermore, the mass ratio of the prepolymer to the quaternary phosphonium compound reagent is 1:(1-5); and / or,

[0043] The cationic precursor group is selected from at least one of a diphenylphosphine group, a methylphenylphosphine group, a phenyltolylphosphine group, a methyl(4-methylphenyl)-phosphine group, a diethylphosphine group, and a dimethylphosphine group; and / or,

[0044] The anionic precursor group is selected from at least one of chlorobenzene, dichlorobenzene, bromobenzene, dibromobenzene, benzyl chloride, benzyl bromide, and benzyl iodide; and / or,

[0045] When the precursor ion group is a cationic precursor group, the quaternary phosphonium compound reagent is selected from at least one of chloromethane, benzyl chloride, epihalohydrin, and halogenated alkylene oxide; and / or,

[0046] When the precursor ion group is an anionic precursor group, the quaternary phosphonium compound reagent is selected from an alkyl-substituted phosphorus compound or an aryl-substituted phosphorus compound. The alkyl-substituted phosphorus compound is selected from trimethylphosphine and / or triethylphosphine, and the aryl-substituted phosphorus compound is selected from at least one of triphenylphosphine, dimethylphenylphosphine, diphenyltolylphosphine, and dimethyl(4-methylphenyl)-phosphine.

[0047] To solve the above technical problems, an embodiment of the present application further provides an optoelectronic device, which adopts the following technical solutions:

[0048] An optoelectronic device includes a first electrode, a charge transport layer, an optical functional layer, and a second electrode that are sequentially stacked.

[0049] Among them, the material of the charge transport layer includes a polymer, and the polymer is the polymer as described above or is prepared by the preparation method of the polymer as described above.

[0050] Further, the materials of the first electrode and the second electrode are independently selected from at least one of metal materials, carbon materials, and metal oxides. The metal materials include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxides include doped or undoped metal oxides. The doped metal oxides include at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or a composite electrode in which a doped or undoped transparent metal oxide sandwiches a metal, and the composite electrode is selected from one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or,

[0051] The light functional layer is a light functional layer or an organic light-emitting layer; the material of the light functional layer includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots is selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; the I-III-VI group compounds are selected from at least one of CuInS2, CuInSe2, and AgInS2. The core of the core-shell structure quantum dots includes any one of the above single-structure quantum dots, and the shell material of the core-shell structure quantum dots includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS, and the above single-structure quantum dots;The materials of the organic light-emitting layer include at least one of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine-C2,N]iridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine-C2,N]iridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, and DBP fluorescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or;

[0052] The optoelectronic device further includes a hole injection layer disposed between the first electrode and the carrier transport layer; the materials of the hole injection layer are selected from at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal stannides, doped graphene, undoped graphene, and C60; and / or,

[0053] The optoelectronic device further includes an electron function layer disposed between the optical function layer and the second electrode, the electron function layer includes an electron transport layer and / or an electron injection layer, and the materials of the electron function layer and the electron injection layer independently include inorganic materials and / or organic materials; the inorganic materials include one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanate oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doped elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium; the organic materials include at least one of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, polythiophene compounds, perylene diimide compounds, fullerene compounds; and / or,

[0054] The thickness of the carrier transport layer is 15 nm to 50 nm; and / or,

[0055] The thickness of the optical function layer is 20 nm to 50 nm.

[0056] Furthermore, the particle sizes of the single-structure quantum dots and the core-shell structure quantum dots are independently 2 nm to 10 nm; and / or,

[0057] The thickness of the hole injection layer is 5 nm to 10 nm; and / or,

[0058] The thickness of the electron transport layer is 30 nm to 150 nm.

[0059] In order to solve the above technical problems, the embodiments of the present application further provide a display device, which adopts the following technical solutions:

[0060] A display device includes the optoelectronic device as described above.

[0061] Compared with the prior art, the embodiments of the present application mainly have the following beneficial effects: The polymer of the present application effectively improves the carrier transport efficiency. Description of the Drawings

[0062] In order to more clearly illustrate the solutions in the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0063] Figure 1 is a flowchart of the preparation method of the polymer in the embodiments of the present application;

[0064] Figure 2 is a schematic structural diagram of the optoelectronic device in the embodiments of the present application.

[0065] Reference Signs:

[0066] 21. First electrode; 22. Hole injection layer; 23. Carrier transport layer; 24. Optical functional layer; 25. Electron transport layer; 26. Electron injection layer; 27. Second electrode. Detailed Embodiments

[0067] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs; the terms used in the description of the embodiments of this application in this specification are only for the purpose of describing specific embodiments, and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the description and claims of this application and the above description of the drawings are intended to cover non-exclusive inclusion. The terms "first", "second", etc. in the description and claims of this application or the above drawings are used to distinguish different objects, rather than to describe a specific order.

[0068] References herein to "embodiments" mean that the particular features, structures, or characteristics described in connection with the embodiments can be included in at least one embodiment of the present application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0069] Referring to Figure 1 , an embodiment of the present application provides a polymer, and the structure of the polymer is shown in Formula I:

[0070]

[0071] Wherein, at least one of R1, R2, and R3 includes a crosslinkable group, and at least one of the R1, the R2, and the R3 includes a quaternary phosphonium group; the degree of polymerization n of the polymer is ≥2.

[0072] Wherein, the crosslinkable group is selected from at least one of hydrogen, deuterium, amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, cyano group, C5-C8 olefin group, C3-C6 alkyl group, substituted or unsubstituted C1-C20 hydrocarbon group, substituted or unsubstituted C1-C20 hydrocarbon oxy group, substituted or unsubstituted cycloalkyl group with 3-60 ring atoms, substituted or unsubstituted heterocycloalkyl group with 3-60 ring atoms, substituted or unsubstituted aryl group with 5-60 ring atoms, substituted or unsubstituted heteroaryl group with 5-60 ring atoms, substituted or unsubstituted aryloxy group with 5-60 ring atoms, and substituted or unsubstituted heteroaryloxy group with 5-60 ring atoms; the substituent of the substitution is selected from at least one of amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, and cyano group; the heteroatoms in the heteroaryl group and the heteroaryloxy group are each independently selected from at least one of N, S, O, P, and Si, and the number of the heteroatoms is 1-20.

[0073] In this embodiment, the polymer of the present application has a crosslinkable group and a quaternary phosphonium group. After the crosslinkable group undergoes a crosslinking reaction, the polymer of the present application can form a linear or network structure, enhancing the compactness of the polymer and the intermolecular interaction force, thereby improving the solvent resistance; and, in order to reduce the influence on carrier transport after crosslinking, by utilizing the charged property of the quaternary phosphonium group, an electrostatic interaction can occur with the quantum dots, thereby improving the carrier transport efficiency.

[0074] Secondly, the quaternary phosphonium group has a relatively high thermal decomposition temperature (above 400 °C) and a relatively large ionic radius Effectively improving the heat resistance and flame retardancy of the crosslinked polymer.

[0075] Optionally, the degree of polymerization of the polymer is selected from any one or any range formed by any two of 2, 4, 6, 8, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100.

[0076] Optionally, the number of carbon (C) atoms of the hydrocarbon group is selected from any one or any range formed by any two of 5, 6, 7.

[0077] Optionally, the number of carbon (C) atoms of the alkyl group is selected from any one or any range formed by any two of 3, 4, 5, 6.

[0078] Optionally, the number of carbon (C) atoms of the hydrocarbon group is selected from any one or any range formed by any two of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20.

[0079] Optionally, the number of carbon (C) atoms of the hydrocarbonoxy group is selected from any one or any range formed by any two of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20.

[0080] Optionally, the number of ring atoms of the cycloalkyl group is selected from any one or any range formed by any two of 3, 5, 8, 10, 13, 15, 18, 20, 23, 25, 28, 30, 33, 35, 38, 40, 43, 45, 48, 50, 53, 55, 58, 60.

[0081] Optionally, the number of ring atoms of the heterocycloalkyl group is selected from any one or any range formed by any two of 3, 5, 8, 10, 13, 15, 18, 20, 23, 25, 28, 30, 33, 35, 38, 40, 43, 45, 48, 50, 53, 55, 58, 60.

[0082] Optionally, the number of ring atoms of the aryl group is selected from any one or any range formed by any two of 3, 5, 8, 10, 13, 15, 18, 20, 23, 25, 28, 30, 33, 35, 38, 40, 43, 45, 48, 50, 53, 55, 58, 60.

[0083] Optionally, the number of ring atoms of the heteroaryl group is selected from any one or any range formed by any two of 3, 5, 8, 10, 13, 15, 18, 20, 23, 25, 28, 30, 33, 35, 38, 40, 43, 45, 48, 50, 53, 55, 58, 60.

[0084] Optionally, the number of ring atoms of the aryloxy group is selected from any one of 3, 5, 8, 10, 13, 15, 18, 20, 23, 25, 28, 30, 33, 35, 38, 40, 43, 45, 48, 50, 53, 55, 58, 60 or the range formed by any two of them.

[0085] Optionally, the number of ring atoms of the heteroaryloxy group is selected from any one of 3, 5, 8, 10, 13, 15, 18, 20, 23, 25, 28, 30, 33, 35, 38, 40, 43, 45, 48, 50, 53, 55, 58, 60 or the range formed by any two of them.

[0086] Optionally, the number of heteroatoms in the heteroaryl group and the heteroaryloxy group is selected from any one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 or the range formed by any two of them.

[0087] In some embodiments, the molecular weight of the polymer is 850 to 80,000.

[0088] Optionally, the molecular weight of the polymer is selected from any one of 850, 1000, 5000, 10000, 15000, 20000, 25000, 30000, 35000, 40000, 45000, 50000, 55000, 60000, 75000, 80000 or the range formed by any two of them.

[0089] In some embodiments, the structure of the quaternary phosphonium group is as shown in Formula II:

[0090]

[0091] Wherein, R4, R5, and R6 are each independently selected from C1-C3 alkyl groups or C6-C18 aryl groups, and X is a halogen atom.

[0092] Optionally, the number of carbon (C) atoms of the alkyl group is selected from any one of 1, 2, 3 or the range formed by any two of them.

[0093] Optionally, the alkyl group is selected from at least one of trimethyl, triethyl, methane, ethylene oxide, and propylene oxide; and / or,

[0094] Optionally, the number of carbon (C) atoms of the aryl group is selected from any one of 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18 or the range formed by any two of them.

[0095] Optionally, the aryl group is selected from at least one of triphenyl, dimethylbenzene, diphenyltolyl, dimethyl(4-methylphenyl), benzyl, etc.

[0096] Optionally, the halogen anion is selected from at least one of fluoride anion, chloride anion, bromide anion, iodide anion, etc.

[0097] In some embodiments, the structure of the polymer is selected from at least one of Formula C to Formula I-16;

[0098]

[0099]

[0100] See Figure 1 , the embodiments of the present application further provide a method for preparing a polymer, which is used to prepare the polymer as described above. The method for preparing the polymer includes the following steps:

[0101] Step S11, providing a prepolymer and a quaternary phosphonium compound precursor solution.

[0102] In some embodiments, the general structural formula of the prepolymer is as follows:

[0103]

[0104] Wherein, R7, R8, and R9 are each independently selected from hydrogen, deuterium, amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, cyano group, C5-C8 olefin group, C1-C6 alkyl group, substituted or unsubstituted C1-C20 hydrocarbon group, substituted or unsubstituted C1-C20 hydrocarbon oxy group, substituted or unsubstituted cycloalkyl group with 3 to 60 ring atoms, substituted or unsubstituted heterocycloalkyl group with 3 to 60 ring atoms, substituted or unsubstituted aryl group with 5 to 60 ring atoms, substituted or unsubstituted heteroaryl group with 5 to 60 ring atoms, substituted or unsubstituted aryloxy group with 5 to 60 ring atoms, substituted or unsubstituted heteroaryloxy group with 5 to 60 ring atoms, etc.

[0105] In some embodiments, the prepolymer is a repeating unit of fluorene and triphenylamine, and this repeating unit of fluorene and triphenylamine includes fluorene derivatives and triphenylamine derivatives.

[0106] Optionally, the fluorene derivative includes but is not limited to 9,9-dipentenylfluorene-2,7-bis(pinacol borate).

[0107] Optionally, the triphenylamine derivative includes but is not limited to N,N'-diaryl-N,N'-diphenylaniline (TPD), 4,4'-diphenyldiphenylamine (DPA), 2-(4-methylphenyl)-4,6-di(phenyl)pyridine (DMBP), etc.

[0108] Exemplarily, the preparation method of the fluorene and triphenylamine repeating units is as follows: Dissolve dibromo triphenylamine monomer, 9,9-dipentenyl fluorene-2,7-bis(pinacol borate), and tetrakis(triphenylphosphine)palladium (Pd(PPh3)4) in toluene, stir evenly, then add potassium carbonate (K2CO3) solution, stir at 105 °C under a nitrogen atmosphere for 48 h, cool to room temperature under nitrogen protection, then separate the organic layer with a separatory funnel, extract and purify successively with water and saturated brine, pour the obtained extract into methanol to precipitate a light yellow polymer, filter the light yellow polymer by suction, and finally purify it by Soxhlet extraction with methanol for 48 h, and then dry it in vacuo to obtain a prepolymer; wherein, the R7 is an alkyl group of C1, the R8 is an olefin group of C8, and the R9 is an olefin group of C8. The reaction formula of the prepolymer is as follows:

[0109]

[0110] In some embodiments, the quaternary phosphonium compound precursor solution includes a precursor ion group and a quaternary phosphonium compound reagent. The precursor ion group is quaternized by the quaternary phosphonium compound reagent to form a quaternary phosphonium group.

[0111] In some embodiments, the mass ratio of the prepolymer to the quaternary phosphonium compound reagent is 1:(1 - 5).

[0112] Optionally, the mass ratio of the prepolymer to the quaternary phosphonium compound reagent is selected from any one or any range formed by any two of 1:1, 1:2, 1:3, 1:4, 1:5.

[0113] In order to enable those skilled in the art to better understand the solution of this application, the technical solution of the precursor ion group in the embodiments of this application will be clearly and completely described below.

[0114] (1) The precursor ion group is a cationic precursor group, the cationic precursor compound is an alkyl group containing a P atom in the side chain, and the quaternizing reagent is selected from at least one of alkylating reagents such as chloromethane, benzyl chloride, epihalohydrin, and haloalkylene oxide.

[0115] Optionally, the alkyl group containing a P atom is selected from diphenylphosphine group, methylphenylphosphine group, phenyltolylphosphine group, methyl(4-methylphenyl)-phosphine group, diethylphosphine group, dimethylphosphine group, etc., preferably one of diphenylphosphine group and methyl(4-methylphenyl)-phosphine group.

[0116] Optionally, the haloalkylene oxide includes haloethylene oxide and / or halopropylene oxide.

[0117] (2) When the target compound is an anion precursor group, the anion precursor compound is an alkyl group with a halogen atom in the side chain, and the quaternary phosphating reagent is an alkyl-substituted phosphorus or an aryl-substituted phosphorus.

[0118] Optionally, the alkyl group containing a halogen atom is selected from one of chlorobenzene, dichlorobenzene, bromobenzene, dibromobenzene, benzyl chloride, benzyl bromide, and benzyl iodide.

[0119] Optionally, the alkyl-substituted phosphorus is selected from trimethylphosphine and / or triethylphosphine.

[0120] Optionally, the aryl-substituted phosphorus is selected from triphenylphosphine.

[0121] Step S12: Mix the prepolymer and the quaternary phosphorus compound solution, and perform a cross-linking reaction to obtain a polymer; wherein, the structure of the polymer is shown in Formula I:

[0122]

[0123] Among them, at least one of R1, R2, and R3 includes a cross-linkable group, and at least one of R1, R2, and R3 includes a quaternary phosphorus group; the degree of polymerization n of the polymer is ≥2.

[0124] Among them, the cross-linkable group is selected from at least one of hydrogen, deuterium, amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, cyano group, substituted or unsubstituted C1-C20 hydrocarbon group, substituted or unsubstituted C1-C20 hydrocarbon oxy group, substituted or unsubstituted cycloalkyl group with 3-60 ring atoms, substituted or unsubstituted heterocyclic hydrocarbon group with 3-60 ring atoms, substituted or unsubstituted aryl group with 5-60 ring atoms, substituted or unsubstituted heteroaryl group with 5-60 ring atoms, substituted or unsubstituted aryloxy group with 5-60 ring atoms, and substituted or unsubstituted heteroaryloxy group with 5-60 ring atoms; the substituent of the substitution is selected from at least one of amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, and cyano group; the heteroatoms in the heteroaryl group and the heteroaryloxy group are each independently selected from at least one of N, S, O, P, and Si, and the number of heteroatoms is 1-20.

[0125] It can be understood that the polymer of the present application has a cross-linkable group and a quaternary phosphorus group. After the cross-linking reaction, the cross-linkable group can make the polymer of the present application form a linear or network structure, enhance the tightness of the polymer and the intermolecular interaction force, thereby improving the solvent resistance; and, in order to reduce the influence on carrier transport after cross-linking, using the charged property of the quaternary phosphorus group, it can have an electrostatic interaction with the quantum dots, thereby improving the carrier transport efficiency.

[0126] Secondly, the phosphonium group has a relatively high thermal decomposition temperature (above 400 °C) and a relatively large ionic radius Effectively improving the heat resistance and flame retardancy of the polymer after crosslinking.

[0127] In some embodiments, the temperature of the crosslinking reaction is 100 °C to 250 °C.

[0128] Optionally, the temperature of the crosslinking reaction is selected from any one or any range formed by any two of 100 °C, 110 °C, 120 °C, 130 °C, 140 °C, 150 °C, 160 °C, 170 °C, 180 °C, 190 °C, 200 °C, 210 °C, 220 °C, 230 °C, 240 °C, 250 °C.

[0129] In some embodiments, the time of the crosslinking reaction is 20 min to 60 min.

[0130] Optionally, the time of the crosslinking reaction is selected from any one or any range formed by any two of 20 min, 25 min, 30 min, 35 min, 40 min, 45 min, 55 min, 60 min.

[0131] In some embodiments, in the above step S12, in the crosslinking reaction, an initiator is added to the mixed solution of the prepolymer and the phosphonium compound solution.

[0132] In some embodiments, the initiation temperature of the initiator is 60 °C to 130 °C, and the initiator can increase the rate and efficiency of the crosslinking reaction of the polymer.

[0133] Optionally, the initiation temperature of the initiator is selected from any one or any range formed by any two of 60 °C, 65 °C, 70 °C, 75 °C, 80 °C, 85 °C, 90 °C, 95 °C, 100 °C, 105 °C, 110 °C, 115 °C, 120 °C, 125 °C, 130 °C.

[0134] In some embodiments, the initiator is a peroxide initiator or a free radical initiator.

[0135] In some embodiments, the peroxide initiator is selected from at least one of tert-butyl peroxybenzoate, di-tert-butyl peroxide, 2,5-dimethyl-2,5-bis(tert-butylperoxy)hexane, 3,6,9-triethyl-3,6,9-trimethyl-1,4,7-triperoxynonane.

[0136] In some embodiments, the free radical initiator is selected from benzoin and its derivatives.

[0137] In some embodiments, the organic solvent is selected from at least one of benzene, toluene, xylene, chlorobenzene, dichlorobenzene.

[0138] In some embodiments, the mass ratio of the polymer in the organic material is 0.01-5%.

[0139] Optionally, the mass ratio of the polymer in the organic material is selected from any one or any range formed by any two of 0.01%, 0.1%, 0.5%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%.

[0140] In some embodiments, the mass ratio of the initiator in the organic material is 0.0001-0.05%.

[0141] Optionally, the mass ratio of the initiator in the organic material is any one or any range formed by any two of 0.0001%, 0.01%, 0.015%, 0.02%, 0.025%, 0.03%, 0.035%, 0.04%, 0.045%, 0.05%.

[0142] See Figure 2 , an optoelectronic device provided by an embodiment of the present application includes a first electrode 21, a carrier transport layer 23, an optical functional layer 24, and a second electrode 27 that are sequentially stacked. The material of the carrier transport layer 23 includes a polymer, and the polymer is the polymer as described above or is prepared by the preparation method of the polymer as described above.

[0143] Understandably, the carrier transport layer 23 of the present application is made of an organic material, and the organic material contains the polymer as described above. Among the crosslinkable groups and quaternary phosphonium groups it has, after the crosslinkable groups undergo a crosslinking reaction, the polymer of the present application can form a linear or network structure, enhancing the intermolecular interaction force in the prepared carrier transport layer 23, thereby improving the solvent resistance of the carrier transport layer 23 and preventing the solvent of the optical functional layer 24 from damaging the carrier transport layer 23 during preparation; and, in order to reduce the influence on hole carrier transport after crosslinking, using the charged property of the quaternary phosphonium group, electrostatic interaction can occur with the quantum dots in the optical functional layer 24, reducing the contact resistance between the carrier transport layer 23 and the optical functional layer 24, thereby improving the transport efficiency of hole carriers.

[0144] Secondly, the quaternary phosphonium group has a relatively high thermal decomposition temperature (above 400 °C) and a relatively large ionic radius so that the formed carrier transport layer 23 has strong heat resistance and flame retardancy, improving the use stability of the carrier transport layer 23, thereby improving the stability of the optoelectronic device.

[0145] In some embodiments, the thickness of the carrier transport layer is 15 nm to 50 nm.

[0146] Optionally, the thickness of the carrier transport layer is selected from any one of 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm or the range formed by any two of them.

[0147] In some embodiments, the materials of the first electrode 21 and the second electrode 27 are independently selected from at least one of a metal material, a carbon material, and a metal oxide. The metal material includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxide includes a doped or undoped metal oxide. The doped metal oxide includes at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or a composite electrode selected from a composite of a doped or undoped transparent metal oxide sandwiching a metal, and the composite electrode is selected from one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0148] In some embodiments, the thickness of the optical functional layer is 20 nm to 50 nm.

[0149] Optionally, the thickness of the optical functional layer is selected from any one of 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm or the range formed by any two of them.

[0150] In some embodiments, the optical functional layer 24 is an optical functional layer or an organic light-emitting layer; the material of the optical functional layer includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots is selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; the I-III-VI group compounds are selected from at least one of CuInS2, CuInSe2, and AgInS2; the core of the core-shell structure quantum dots includes any one of the above single-structure quantum dots, and the shell material of the core-shell structure quantum dots includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS, and the above single-structure quantum dots;The materials of the organic light-emitting layer include at least one of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine-C2,N]iridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine-C2,N]iridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, and DBP fluorescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0151] In some embodiments, the particle sizes of the single-structure quantum dots and the core-shell structure quantum dots are independently 2 nm to 10 nm respectively.

[0152] Optionally, the particle sizes of the single-structure quantum dots and the core-shell structure quantum dots are independently selected from any one or any range formed by any two of 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, and 10 nm.

[0153] In some embodiments, the optoelectronic device further includes a hole injection layer 22 disposed between the first electrode 21 and the carrier transport layer 23; the material of the hole injection layer 22 is selected from at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal stannides, doped graphene, undoped graphene, and C60.

[0154] In some embodiments, the thickness of the hole injection layer is 5 nm to 10 nm.

[0155] Optionally, the thickness of the hole injection layer is selected from any one or any range formed by any two of 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, and 10 nm.

[0156] In some embodiments, the optoelectronic device further includes an electronic functional layer disposed between the optical functional layer 24 and the second electrode 27. The electronic functional layer includes an electron transport layer 25 and / or an electron injection layer 26. The materials of the electronic functional layer and the electron injection layer 26 independently include inorganic materials and / or organic materials respectively; the inorganic materials include one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, etc., and the doped elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, etc.; the organic materials include at least one of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, polythiophene compounds, perylene diimide compounds, fullerene compounds, etc.

[0157] In some embodiments, the thickness of the electron transport layer is 30 nm to 150 nm.

[0158] Optionally, the thickness of the hole injection layer is selected from the range formed by any one or any two of 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm.

[0159] The technical solutions and technical effects of the present application will be described in detail below through specific examples and comparative examples. The following examples are only some embodiments of the present application and do not specifically limit the present application.

[0160] Example 1:

[0161] Step 1: Mix 46 g of bromotriphenylamine monomer, 56 g of 9,9-dioctenylfluorene-2,7-bis(boronic acid pinacol ester), 2 g of Pd(PPh3)4 and 5 L of toluene and stir, then add 5 L of potassium carbonate (K2CO3) solution. The concentration of potassium carbonate (K2CO3) in the potassium carbonate (K2CO3) solution is 3 mol / L. Then stir at a temperature of 105 °C and in a nitrogen atmosphere for 48 h, cool to room temperature under nitrogen protection, then separate the organic layer with a separatory funnel, extract and purify successively with water and saturated brine. Pour the obtained extract into methanol to precipitate a light yellow polymer. After filtering the light yellow polymer by suction, purify it with a methanol Soxhlet extractor for 48 h and then dry it under vacuum to obtain prepolymer 1;

[0162] Step 2: Dissolve 65 g of prepolymer 1 in 4 L of tetrahydrofuran solvent, add 20 g of triphenylphosphine, and carry out a heating reaction to obtain Polymer 1. The reaction formula of Polymer 1 is as follows:

[0163]

[0164] Example 2:

[0165] The difference from Example 1 above is that in Step 2 of this example, the mass of prepolymer 1 is changed to 15 g, and the mass of triphenylphosphine is changed to 4 g.

[0166] Example 3:

[0167] The difference from Example 1 above is that in Step 2 of this example, the mass of prepolymer 1 is changed to 520 g, and the mass of triphenylphosphine is changed to 160 g.

[0168] Example 4:

[0169] The difference from Example 1 above is that in Step 1 of this example, prepolymer 2 is prepared using the method and conditions of prepolymer 1 in Example 1; in Step 2 of this example, triphenylphosphine is changed to benzyl chloride, and a heating reaction is carried out to obtain Polymer 2. The reaction formula of this Polymer 2 is as follows:

[0170]

[0171] Example 5:

[0172] The difference from Example 1 above is that in Step 1 of this example, prepolymer 3 is prepared using the method and conditions of prepolymer 1 in Example 1; in Step 2 of this example, triphenylphosphine is changed to dimethylphenylphosphine, and a heating reaction is carried out to obtain Polymer 3. The reaction formula of this Polymer 3 is as follows:

[0173]

[0174] Experimental test analysis:

[0175] The polymers m prepared in Examples 1 to 5 are tested by gel permeation chromatography (GPC), where m is any one of 1 to 3. Specifically, tetrahydrofuran solvent is used as the eluent, the flow rate is 1 mL / min, the column temperature is maintained at 40 °C, the relationship between the molecular weight of the column system and the elution volume or elution time is calibrated with polystyrene standards, GPC data processing is carried out, and the number average molecular weight M of Polymer m is quantitatively obtained on the molecular weight scale relative to the polystyrene standards n , and the number average molecular weight M of Polymer m n is divided by its monomer molecular weight M U to obtain the degree of polymerization n. The test results are shown in Table 1 below:

[0176] Table 1

[0177]

[0178]

[0179] Obviously, the embodiments described above are only a part of the embodiments of this application, rather than all of them. The preferred embodiments of this application are given in the drawings, but they do not limit the patent scope of this application. This application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosed content of this application more thorough and comprehensive. Although this application has been described in detail with reference to the foregoing embodiments, for those skilled in the art, they can still modify the technical solutions recorded in the foregoing specific embodiments, or perform equivalent replacements on some of the technical features. Any equivalent structures made by using the content of the specification and drawings of this application, directly or indirectly applied in other related technical fields, are equally within the scope of the patent protection of this application.

Claims

1. A polymer, characterized in that, The structure of the polymer is shown in Formula I: wherein, R1, R2, and R3 are each independently selected from at least one of hydrogen, deuterium, amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, cyano group, C5-C8 alkenyl group, C3-C6 alkyl group, substituted or unsubstituted C1-C20 hydrocarbon group, substituted or unsubstituted C1-C20 hydrocarbon oxy group, substituted or unsubstituted cycloalkyl group with 3-60 ring atoms, substituted or unsubstituted heterocycloalkyl group with 3-60 ring atoms, substituted or unsubstituted aryl group with 5-60 ring atoms, substituted or unsubstituted heteroaryl group with 5-60 ring atoms, substituted or unsubstituted aryloxy group with 5-60 ring atoms, and substituted or unsubstituted heteroaryloxy group with 5-60 ring atoms; and at least one of the R1, the R2, and the R3 includes a quaternary phosphonium group; The substituent of the substitution is selected from at least one of amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, and cyano group; The heteroatoms in the heteroaryl group and the heteroaryloxy group are each independently selected from at least one of N, S, O, P, and Si, and the number of the heteroatoms is 1-20; The degree of polymerization n of the polymer is n≥2.

2. The polymer according to claim 1, characterized in that, The degree of polymerization n of the polymer is n≥10; and / or, The structure of the quaternary phosphonium group is shown in Formula II: wherein, R4, R5, and R6 are each independently selected from C1-C3 alkyl group or C6-C18 aryl group, and X is a halogen atom.

3. The polymer according to claim 2, characterized in that, The R4, the R5, and the R6 are each independently selected from C2-C3 alkyl group or C8-C15 aryl group; and / or, The halogen atom is selected from at least one of fluorine, chlorine, bromine, and iodine.

4. The polymer according to any one of claims 1 to 3, characterized in that, The structure of the polymer is selected from at least one of Formula C to Formula I-(1-16); 5. A method for preparing a polymer, characterized in that, comprising the following steps: providing a prepolymer and a quaternary phosphonium compound precursor solution; mixing the prepolymer and the quaternary phosphonium compound precursor solution, and performing a cross-linking reaction to obtain a polymer; wherein, the structure of the polymer is shown in Formula I: wherein, R1, R2, and R3 are each independently selected from at least one of hydrogen, deuterium, amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, cyano group, C5-C8 alkenyl group, C3-C6 alkyl group, substituted or unsubstituted C1-C20 hydrocarbon group, substituted or unsubstituted C1-C20 hydrocarbon oxy group, substituted or unsubstituted cycloalkyl group with 3-60 ring atoms, substituted or unsubstituted heterocycloalkyl group with 3-60 ring atoms, substituted or unsubstituted aryl group with 5-60 ring atoms, substituted or unsubstituted heteroaryl group with 5-60 ring atoms, substituted or unsubstituted aryloxy group with 5-60 ring atoms, and substituted or unsubstituted heteroaryloxy group with 5-60 ring atoms; and at least one of the R1, the R2, and the R3 includes a quaternary phosphonium group; The substituent of the substitution is selected from at least one of amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, mercapto group, and cyano group; The heteroatoms in the heteroaryl group and the heteroaryloxy group are each independently selected from at least one of N, S, O, P, and Si, and the number of the heteroatoms is 1-20; The degree of polymerization n of the polymer satisfies n≥2.

6. The preparation method of the polymer according to claim 5, characterized in that, The prepolymer includes a fluorene derivative and a triphenylamine derivative; and / or, The quaternary phosphonium compound precursor solution includes a precursor ionic group and a quaternary phosphonium compound reagent; and / or, The temperature of the crosslinking reaction is 100°C to 250°C; and / or, The time of the crosslinking reaction is 20 min to 60 min; and / or, The degree of polymerization n of the polymer satisfies n≥10; and / or, The structure of the quaternary phosphonium group is shown in Formula II: Wherein, R4, R5, and R6 are each independently selected from an alkyl group having 1 to 3 carbon atoms or an aryl group having 6 to 18 carbon atoms, and X is a halogen atom.

7. The method for preparing the polymer according to claim 6, wherein The mass ratio of the prepolymer to the quaternary phosphonium compound reagent is 1:(1 - 5); and / or, The precursor ionic group is a cationic precursor group or an anionic precursor group; and / or, R4, R5, and R6 are each independently selected from an alkyl group having 2 to 3 carbon atoms or an aryl group having 8 to 15 carbon atoms; and / or, The halogen atom is selected from at least one of fluorine, chlorine, bromine, and iodine.

8. The method for preparing the polymer according to claim 7, wherein The cationic precursor group is selected from at least one of a diphenylphosphine group, a methylphenylphosphine group, a phenyltolylphosphine group, a methyl(4 - methylphenyl)-phosphine group, a diethylphosphine group, and a dimethylphosphine group; and / or, The anionic precursor group is selected from at least one of chlorobenzene, dichlorobenzene, bromobenzene, dibromobenzene, benzyl chloride, benzyl bromide, and benzyl iodide; and / or, When the precursor ionic group is a cationic precursor group, the quaternary phosphonium compound reagent is selected from at least one of chloromethane, benzyl chloride, epihalohydrin, and haloalkylene oxide; and / or, When the precursor ionic group is an anionic precursor group, the quaternary phosphonium compound reagent is selected from an alkyl-substituted phosphorus compound or an aryl-substituted phosphorus compound. The alkyl-substituted phosphorus compound is selected from trimethylphosphine and / or triethylphosphine, and the aryl-substituted phosphorus compound is selected from at least one of triphenylphosphine, dimethylphenylphosphine, diphenyltolylphosphine, and dimethyl(4 - methylphenyl)-phosphine.

9. An optoelectronic device, characterized in that, It includes a first electrode, a charge transport layer, an optical functional layer, and a second electrode which are sequentially stacked; Wherein, the material of the charge transport layer includes a polymer, and the polymer is the polymer according to any one of claims 1 to 4, or is prepared by the method for preparing the polymer according to any one of claims 5 to 8.

10. The optoelectronic device according to claim 9, wherein The materials of the first electrode and the second electrode are independently selected from at least one of metal materials, carbon materials, and metal oxides. The metal materials include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxides include doped or undoped metal oxides. The doped metal oxides include at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or a composite electrode selected from a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides, and the composite electrode is selected from one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or, The light functional layer is a light functional layer or an organic light-emitting layer; the material of the light functional layer includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots is selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; the I-III-VI group compounds are selected from at least one of CuInS2, CuInSe2, and AgInS2. The core of the core-shell structure quantum dots includes any one of the above single-structure quantum dots, and the shell material of the core-shell structure quantum dots includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS, and the above single-structure quantum dots;The materials of the organic light-emitting layer include at least one of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine-C2,N]iridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine-C2,N]iridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, and DBP fluorescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or; The optoelectronic device further includes a hole injection layer disposed between the first electrode and the carrier transport layer; the material of the hole injection layer is selected from at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal stannides, doped graphene, undoped graphene, and C60; and / or, The optoelectronic device further includes an electron functional layer disposed between the optical functional layer and the second electrode. The electron functional layer includes an electron transport layer and / or an electron injection layer. The materials of the electron functional layer and the electron injection layer independently include inorganic materials and / or organic materials; the inorganic materials include one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanate oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, and barium titanate, and the doped elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; the organic materials include at least one of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, polythiophene compounds, perylene diimide compounds, and fullerene compounds; and / or, The thickness of the carrier transport layer is 15 nm to 50 nm; and / or, The thickness of the optical functional layer is 20 nm to 50 nm.

11. The optoelectronic device according to claim 10, wherein The particle sizes of the single-structure quantum dots and the core-shell structure quantum dots are independently 2 nm to 10 nm; and / or, The thickness of the hole injection layer is 5 nm to 10 nm; and / or, The thickness of the electron transport layer is 30 nm to 150 nm.

12. A display device, characterized in that, Comprising an optoelectronic device according to any one of claims 9 to 11.

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