Photoelectric device, preparation method thereof and display device

Abstract

The invention belongs to the technical field of display, and relates to a photoelectric device, a preparation method thereof and a display device. The photoelectric device comprises an anode, a photoelectric conversion layer and a cathode which are sequentially stacked, the photoelectric device further comprises a functional layer, the functional layer is located between the photoelectric conversion layer and the cathode or located between the photoelectric conversion layer and the anode, and the material of the functional layer comprises chloride. According to the invention, the chloride can improve the injection of carriers into the photoelectric conversion layer, so that the carrier transmission performance of the functional layer is effectively improved, and the efficiency of the photoelectric device is improved.

Description

Technical Field

[0001] This application relates to the field of display technologies, and more specifically, to an optoelectronic device, a preparation method thereof, and a display device. Background Art

[0002] Currently, most optoelectronic devices include an anode, a photoelectric conversion layer, and a cathode that are stacked, but the optoelectronic devices with such a structure have low efficiency. Summary of the Invention

[0003] Based on this, embodiments of this application aim to provide an optoelectronic device, a preparation method thereof, and a display device.

[0004] To solve the above technical problems, embodiments of this application provide an optoelectronic device, adopting the following technical solutions:

[0005] An optoelectronic device includes an anode, a photoelectric conversion layer, and a cathode that are sequentially stacked, and further includes a functional layer. Among them, the functional layer is located between the photoelectric conversion layer and the cathode, or between the photoelectric conversion layer and the anode, and the material of the functional layer includes a chloride.

[0006] Further, the optoelectronic device further includes an electron functional layer; among them,

[0007] the electron functional layer is the functional layer, and the electron functional layer is located between the photoelectric conversion layer and the cathode; or

[0008] the electron functional layer is located between the photoelectric conversion layer and the cathode, and the functional layer is disposed between the photoelectric conversion layer and the electron functional layer; or

[0009] the electron functional layer is located between the photoelectric conversion layer and the cathode, and the functional layer is disposed between the electron functional layer and the cathode; or

[0010] the electron functional layer is located between the photoelectric conversion layer and the cathode, and the functional layer is disposed between the photoelectric conversion layer and the electron functional layer, and between the electron functional layer and the cathode.

[0011] Further, the thickness of the electron functional layer is 15 - 100 nm; and / or,

[0012] when the optoelectronic device includes the electron functional layer and the functional layer, the thickness of the functional layer is 1 - 5 nm.

[0013] Further, the chloride is selected from at least one of calcium chloride and magnesium chloride; and / or,

[0014] The material of the electronic functional layer is selected from N-type semiconductor materials, and the N-type semiconductor materials are selected from one or more of doped or undoped zinc oxide, titanium dioxide, tin oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, and the doping elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium; and / or,

[0015] The anode is selected from one or more of metal electrodes, silicon-carbon electrodes, doped or undoped metal oxide electrodes, and composite electrodes; the cathode is selected from metal electrodes; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon-carbon electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene, and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or

[0016] A hole functional layer is provided between the photo-electric conversion layer and the anode, and the hole functional layer includes a hole transport layer and / or a hole injection layer. When the hole functional layer includes a hole transport layer and a hole injection layer arranged in a stack, the hole transport layer is arranged adjacent to the photo-electric conversion layer, and the hole injection layer is arranged adjacent to the anode; the material of the hole transport layer and / or the hole injection layer includes at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal stannides, doped graphene, undoped graphene, and C60; and / or,

[0017] The optoelectronic conversion layer is a quantum dot light-emitting layer. The materials of the quantum dot light-emitting layer include at least one of single-structure quantum dots and core-shell structure quantum dots. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are respectively selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds include but are not limited to one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include but are not limited to one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds include but are not limited to one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compounds include but are not limited to at least one of CuInS2, CuInSe2, and AgInS2.

[0018] To solve the above technical problems, an embodiment of the present application further provides a preparation method of an optoelectronic device, adopting the following technical solution:

[0019] A preparation method of an optoelectronic device includes:

[0020] Provide an anode having a photo - electric conversion layer and a first solution containing a chloride;

[0021] Deposit the first solution on the photo - electric conversion layer to form a functional layer;

[0022] Fabricate a cathode on the functional layer to obtain a photoelectric device.

[0023] Furthermore, the step of depositing the first solution on the photo - electric conversion layer to form a functional layer includes:

[0024] Provide a second solution containing an N - type semiconductor material;

[0025] Mix the first solution and the second solution to obtain a mixture, and deposit the mixture on the photo - electric conversion layer to form an electron functional layer; or

[0026] Deposit the first solution on the photo - electric conversion layer to form a functional layer, deposit the second solution on the functional layer to form an electron functional layer; or

[0027] Deposit the second solution on the photo - electric conversion layer to form an electron functional layer, deposit the first solution on the electron functional layer to form a functional layer; or

[0028] Deposit the first solution on the photo - electric conversion layer to form a functional layer, deposit the second solution on the functional layer to form an electron functional layer, deposit the first solution on the electron functional layer to form a functional layer.

[0029] Furthermore, before the step of fabricating a cathode on the functional layer, it further includes:

[0030] Treat the functional layer in a set atmosphere.

[0031] Furthermore, the time for treating the functional layer in the set atmosphere is 5 - 60 min; and / or,

[0032] The temperature of the set atmosphere is 0°C - 40°C; and / or,

[0033] The relative humidity of the set atmosphere is 20 - 99%; and / or,

[0034] The set atmosphere is at least one of air or water vapor.

[0035] Furthermore, the concentration of the chloride in the first solution is 0.5 - 5 mg / ml; and / or,

[0036] The concentration of the N-type semiconductor material in the second solution is 10 to 100 mg / ml; and / or,

[0037] The molar ratio of the N-type semiconductor material to the chloride is (1:1000) to (1:10); and / or,

[0038] The chloride is selected from at least one of calcium chloride and magnesium chloride; and / or,

[0039] The N-type semiconductor material is selected from one or more of doped or undoped zinc oxide, titanium dioxide, tin oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, and the doping elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium.

[0040] To solve the above technical problems, an embodiment of the present application further provides a display device, which adopts the following technical solutions:

[0041] A display device includes the optoelectronic device as described above, or includes an optoelectronic device prepared by using the preparation method of the optoelectronic device as described above.

[0042] Compared with the prior art, the embodiments of the present application mainly have the following beneficial effects: improving the injection of carriers into the optoelectronic conversion layer to effectively improve the carrier transport performance of the functional layer, so that the efficiency of the optoelectronic device is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] To more clearly illustrate the solutions of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0044] Figure 1 is a schematic diagram of an optoelectronic device in the present application;

[0045] Figure 2 is another schematic diagram of an optoelectronic device in the present application;

[0046] Figure 3 is Figure 1 a schematic diagram of Embodiment A1 of

[0047] Figure 4 is Figure 1 a schematic diagram of Embodiment B1 of

[0048] Figure 5 is Figure 1Schematic diagram of Embodiment C1

[0049] Figure 6 is Figure 1 schematic diagram of Embodiment D1;

[0050] Figure 7 is a flowchart of an embodiment of a method for preparing an optoelectronic device in the present application.

[0051] Reference numerals: 1, anode; 2, optoelectronic conversion layer; 3, cathode; 4, functional layer; 5, electron functional layer. Detailed implementation manners

[0052] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs; the terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion. The terms "first", "second", etc. in the specification and claims of this application or the above drawings are used to distinguish different objects and are not used to describe a specific order.

[0053] Referring to "embodiment" herein means that a specific feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of this application. The phrase appearing in various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0054] To enable those skilled in the technical field to better understand the solution of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the drawings.

[0055] The embodiments of this application provide an optoelectronic device, such as Figure 1 shown in or 2, the optoelectronic device includes an anode 1, an optoelectronic conversion layer 2, and a cathode 3 that are sequentially stacked, and the optoelectronic device further includes a functional layer 4. Among them, the functional layer 4 is located between the optoelectronic conversion layer 2 and the cathode 3, or between the optoelectronic conversion layer 2 and the anode 1, and the material of the functional layer 4 includes chloride.

[0056] In this embodiment, a functional layer is provided between the optoelectronic conversion layer and the cathode or between the optoelectronic conversion layer and the anode, and the material of the functional layer includes a chloride, so that the chloride ions in the chloride can replace the long-chain ligands in the optoelectronic conversion layer, improving the injection of carriers into the optoelectronic conversion layer, effectively improving the carrier transport performance of the functional layer, and enhancing the efficiency of the optoelectronic device.

[0057] As Figure 3 shown, the optoelectronic device provided in Embodiment A1 of the present application further includes an electron functional layer 5; wherein, the electron functional layer 5 is the functional layer 4, and the electron functional layer 5 is located between the optoelectronic conversion layer 2 and the cathode 3.

[0058] In this embodiment, the material of the electron functional layer 5 includes a chloride, and the chloride has a water absorption function. The chloride improves the efficiency of water infiltration into the surface of the film layer, and oxygen and water are embedded in the electron functional layer 5 to form a specific hybrid structure, making the injection of carriers in the electron functional layer 5 balanced, effectively improving the carrier transport performance of the electron functional layer 5; thereby achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0059] As Figure 4 shown, the optoelectronic device provided in Embodiment B1 of the present application further includes an electron functional layer 5; wherein, the electron functional layer 5 is located between the optoelectronic conversion layer 2 and the cathode 3, and the functional layer 4 is disposed between the optoelectronic conversion layer 2 and the electron functional layer 5.

[0060] In this embodiment, on the one hand, setting the electron functional layer 5 between the optoelectronic conversion layer 2 and the cathode 3 can increase the carrier transport efficiency, enhancing the efficiency of the optoelectronic device; on the other hand, disposing the functional layer 4 between the optoelectronic conversion layer 2 and the electron functional layer 5, and the material of the functional layer 4 includes a chloride, so that the chloride ions in the chloride can replace the long-chain ligands in the optoelectronic conversion layer 2, improving the injection of carriers into the optoelectronic conversion layer 2, effectively improving the carrier transport performance of the functional layer 4; thereby achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0061] As Figure 5 shown, the optoelectronic device provided in Embodiment C1 of the present application further includes an electron functional layer 5; wherein, the electron functional layer 5 is located between the optoelectronic conversion layer 2 and the cathode 3, and the functional layer 4 is disposed between the electron functional layer 5 and the cathode 3.

[0062] In this embodiment, on the one hand, setting the electron functional layer 5 between the optoelectronic conversion layer 2 and the cathode 3 can increase the carrier transport efficiency; on the other hand, setting the functional layer 4 between the electron functional layer 5 and the cathode 3, and the material of the functional layer 4 includes chloride. The chloride ions in the chloride adsorb on the oxygen vacancies on the surface of the electron functional layer 5, achieving the effect of passivating the surface defects of the electron functional layer 5 and further improving the stability of the carrier transport performance of the electron functional layer 5.

[0063] As Figure 6 shown, the optoelectronic device provided in Embodiment D1 of the present application further includes an electron functional layer 5; wherein, the electron functional layer 5 is located between the optoelectronic conversion layer 2 and the cathode 3, and the functional layer 5 is provided between the optoelectronic conversion layer 2 and the electron functional layer 5 and between the electron functional layer 5 and the cathode 3.

[0064] In this embodiment, on the one hand, setting the electron functional layer 5 between the optoelectronic conversion layer 2 and the cathode 3 can increase the carrier transport efficiency, thereby improving the efficiency of the optoelectronic device; on the other hand, setting the functional layer 4 between the optoelectronic conversion layer 2 and the electron functional layer 5, and the material of the functional layer 4 includes chloride, so that the chloride ions in the chloride can replace the long-chain ligands in the optoelectronic conversion layer 2, improving the injection of carriers into the optoelectronic conversion layer 2 to effectively improve the carrier transport performance of the functional layer 4, and further achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device; in addition, setting the functional layer 4 between the electron functional layer 5 and the cathode 3, and the material of the functional layer 5 includes chloride. The chloride ions in the chloride adsorb on the oxygen vacancies on the surface of the electron functional layer 5, achieving the effect of passivating the surface defects of the electron functional layer 5 and further improving the stability of the carrier transport performance of the electron functional layer 5.

[0065] Further, the thickness of the electron functional layer 5 is 15 - 100 nm.

[0066] In some alternative embodiments of this embodiment, the thickness of the electron functional layer is any one or the range between any two of 15 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc.

[0067] Further, when the optoelectronic device includes the electron functional layer 5 and the functional layer 4, the thickness of the functional layer 4 is 1 - 5 nm.

[0068] In some alternative embodiments of this embodiment, the thickness of the functional layer 4 is any one or the range between any two of 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, etc.

[0069] Further, the chloride is selected from at least one of calcium chloride and magnesium chloride.

[0070] Furthermore, the material of the electronic functional layer 5 is selected from N-type semiconductor materials, and the N-type semiconductor materials are selected from one or more of doped or undoped zinc oxide, titanium dioxide, tin oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanate, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, and the doping elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium.

[0071] In this embodiment, the chloride ions in the chloride are adsorbed on the oxygen vacancies on the surface of the N-type semiconductor material, achieving the effect of passivating the surface defects of the N-type semiconductor material, achieving the effect of passivating the surface defects of the electronic functional layer, and further improving the stability of the carrier transport performance of the electronic functional layer.

[0072] In this embodiment, the electronic functional layer 5 is used as an electron transport layer.

[0073] Furthermore, the anode 1 is selected from one or more of metal electrodes, silicon-carbon electrodes, doped or undoped metal oxide electrodes, and composite electrodes; the cathode 3 is selected from metal electrodes; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon-carbon electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene, and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0074] Further, a hole functional layer (not shown) is provided between the photoelectric conversion layer 2 and the anode 1. The hole functional layer includes a hole transport layer and / or a hole injection layer. When the hole functional layer includes a hole transport layer and a hole injection layer arranged in a stacked manner, the hole transport layer is disposed adjacent to the photoelectric conversion layer 2, and the hole injection layer is disposed adjacent to the anode 1; the material of the hole transport layer and / or the hole injection layer includes at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal stannides, doped graphene, undoped graphene, and C60.

[0075] Further, the optoelectronic conversion layer 2 is a quantum dot light-emitting layer. The material of the quantum dot light-emitting layer includes at least one of single-structure quantum dots and core-shell structure quantum dots. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are respectively selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds include but are not limited to one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include but are not limited to one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds include but are not limited to one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; and the I-III-VI group compounds include but are not limited to at least one of CuInS2, CuInSe2, and AgInS2.

[0076] In this embodiment, the chloride ions in the chloride can replace the long-chain ligands in the quantum dot light-emitting layer, improving the injection of carriers into the quantum dots, effectively improving the carrier transport performance of the functional layer, and enhancing the efficiency of the optoelectronic device.

[0077] The embodiment of the present application further provides a method for manufacturing an optoelectronic device, as follows Figure 7 shown, the manufacturing method includes:

[0078] S10. Provide an anode with a photo - electric conversion layer and a first solution containing chloride;

[0079] S20. Deposit the first solution on the photo - electric conversion layer to form a functional layer;

[0080] S30. Fabricate a cathode on the functional layer to obtain an optoelectronic device.

[0081] In this embodiment, depositing the first solution containing chloride on the photo - electric conversion layer to form a functional layer enables the chloride ions in the chloride to replace the long - chain ligands in the photo - electric conversion layer, improving the injection of carriers into the photo - electric conversion layer, thereby effectively improving the carrier transport performance of the functional layer and enhancing the efficiency of the optoelectronic device.

[0082] In an optional embodiment A2, the step S20. Deposit the first solution on the photo - electric conversion layer to form a functional layer includes:

[0083] Provide a second solution containing an N - type semiconductor material;

[0084] Mix the first solution and the second solution to obtain a mixture, and deposit the mixture on the photo - electric conversion layer to form an electron functional layer.

[0085] In this embodiment, mixing the second solution containing an N - type semiconductor material with the first solution containing chloride to obtain a mixture, and depositing the mixture on the photo - electric conversion layer to form an electron functional layer, such that the material of the functional layer includes an N - type semiconductor material and chloride. The chloride has a water - absorption function, and the chloride improves the efficiency of water penetration into the film surface. Oxygen and water are embedded in the electron functional layer to form a specific hybrid structure, enabling the injection balance of carriers in the electron functional layer, thereby effectively improving the carrier transport performance of the electron functional layer; and further achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0086] In an optional embodiment B2, the step S20. Deposit the first solution on the photo - electric conversion layer to form a functional layer includes:

[0087] Provide a second solution containing an N - type semiconductor material;

[0088] Deposit the first solution on the photo - electric conversion layer to form a functional layer, and deposit the second solution on the functional layer to form an electron functional layer.

[0089] In this embodiment, a first solution containing a chloride is deposited on the optoelectronic conversion layer to form a functional layer. The chloride ions in the chloride can replace the long-chain ligands in the optoelectronic conversion layer, improving the injection of carriers into the optoelectronic conversion layer, effectively improving the carrier transport performance of the functional layer, and enhancing the efficiency of the optoelectronic device. A second solution containing an N-type semiconductor material is deposited on the functional layer to form an electron functional layer to increase the carrier transport efficiency, thereby achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0090] In an optional embodiment C2, step S20, depositing the first solution on the optoelectronic conversion layer to form a functional layer includes:

[0091] Providing a second solution containing an N-type semiconductor material;

[0092] Depositing the second solution on the optoelectronic conversion layer to form an electron functional layer, and depositing the first solution on the electron functional layer to form a functional layer.

[0093] In this embodiment, a second solution containing an N-type semiconductor material is deposited on the optoelectronic conversion layer to form an electron functional layer to increase the carrier transport efficiency, enhancing the efficiency of the optoelectronic device. A first solution containing a chloride is deposited on the electron functional layer, and the chloride ions adsorb on the oxygen vacancies on the surface of the N-type semiconductor material, achieving the effect of passivating the surface defects of the N-type semiconductor material and the effect of passivating the surface defects of the electron functional layer, further improving the stability of the carrier transport performance of the electron functional layer.

[0094] In an optional embodiment D2, step S20, depositing the first solution on the optoelectronic conversion layer to form a functional layer includes:

[0095] Providing a second solution containing an N-type semiconductor material;

[0096] Depositing the first solution on the optoelectronic conversion layer to form a functional layer, depositing the second solution on the functional layer to form an electron functional layer, and depositing the first solution on the electron functional layer to form a functional layer.

[0097] In this embodiment, a first solution containing chloride is deposited on the optoelectronic conversion layer to form a functional layer. The chloride ions in the chloride can replace the long-chain ligands in the optoelectronic conversion layer, improving the injection of carriers into the optoelectronic conversion layer, effectively enhancing the carrier transport performance of the functional layer, and thus improving the efficiency of the optoelectronic device. A second solution containing an N-type semiconductor material is deposited on the functional layer to form an electron functional layer to increase the carrier transport efficiency, thereby achieving the purpose of adjusting the luminescence efficiency and service life of the optoelectronic device. The first solution containing chloride is deposited on the electron functional layer, and the chloride ions in the chloride are adsorbed on the oxygen vacancies on the surface of the N-type semiconductor material, achieving the effect of passivating the surface defects of the N-type semiconductor material and the effect of passivating the surface defects of the electron functional layer, further improving the stability of the carrier transport performance of the electron functional layer.

[0098] Further, before the step of preparing the cathode on the functional layer, it further includes:

[0099] Treating the functional layer in a set atmosphere.

[0100] In an optional embodiment A2, after preparing the functional layer containing an N-type semiconductor material and chloride, treating the functional layer in a set atmosphere can improve the efficiency of moisture infiltration into the film surface, and thus effectively improve the carrier transport performance of the thin film.

[0101] In an optional embodiment B2, after preparing the electron functional layer containing an N-type semiconductor material, treating the electron functional layer in a set atmosphere can improve the efficiency of moisture infiltration into the film surface, and thus effectively improve the carrier transport performance of the thin film.

[0102] In an optional embodiment C2, after preparing the functional layer containing chloride, treating the functional layer in a set atmosphere can improve the efficiency of moisture infiltration into the film surface, and thus effectively improve the carrier transport performance of the electron functional layer, and the chloride ions in the chloride are adsorbed on the oxygen vacancies on the surface of the N-type semiconductor material, achieving the effect of passivating the surface defects of the N-type semiconductor material and the effect of passivating the surface defects of the electron functional layer, further improving the stability of the carrier transport performance of the electron functional layer.

[0103] In an optional embodiment D2, after preparing the functional layer containing chloride, treating the functional layer in a set atmosphere can improve the efficiency of moisture infiltration into the film surface, and thus effectively improve the carrier transport performance of the thin film, and the chloride ions in the chloride are adsorbed on the oxygen vacancies on the surface of the N-type semiconductor material, achieving the effect of passivating the surface defects of the N-type semiconductor material and the effect of passivating the surface defects of the electron functional layer, further improving the stability of the carrier transport performance of the electron functional layer.

[0104] Furthermore, the time for processing the functional layer in the set atmosphere is 5 to 60 minutes.

[0105] In some alternative embodiments of this embodiment, the time for processing the functional layer in the set atmosphere is any one of 5 minutes, 10 minutes, 15 minutes, 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes, 45 minutes, 50 minutes, 55 minutes, 60 minutes, etc. or the range between any two of them.

[0106] Furthermore, the temperature of the set atmosphere is 0°C to 40°C.

[0107] In some alternative embodiments of this embodiment, the temperature of the set atmosphere is any one of 0°C, 5°C, 10°C, 15°C, 20°C, 25°C, 30°C, 35°C, 40°C, etc. or the range between any two of them.

[0108] Furthermore, the relative humidity of the set atmosphere is 20 to 99%.

[0109] In some alternative embodiments of this embodiment, the relative humidity of the set atmosphere is any one of 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 99%, etc. or the range between any two of them.

[0110] Furthermore, the set atmosphere is at least one of air or water vapor.

[0111] In this embodiment, there are water molecules in air and water vapor. Chloride can have a strong water absorption ability and can form crystal water with water molecules in the air to improve the efficiency of water infiltration into the film surface.

[0112] Furthermore, the concentration of the chloride in the first solution is 0.5 to 5 mg / ml.

[0113] In this embodiment, the thickness of the functional layer or the electronic functional layer is related to the concentration of the chloride in the first solution. The more chloride in the first solution, the thicker the functional layer or the electronic functional layer; the less chloride in the first solution, the thinner the functional layer or the electronic functional layer. The concentration of the chloride in the first solution is less than 5 mg / ml to avoid the thickness of the prepared functional layer or electronic functional layer being too thick, which affects the transport efficiency of carriers after passing through the functional layer or the electronic functional layer.

[0114] In this embodiment, the ability of chloride ions in the chloride to replace the modification ability of the long-chain ligand in the optoelectronic conversion layer is related to the concentration of the chloride in the first solution. The more chloride in the first solution, the better the modification ability of the functional layer; the less chloride in the first solution, the worse the modification ability of the functional layer. The concentration of the chloride in the first solution is greater than 0.5 mg / ml to ensure the modification ability of the functional layer.

[0115] In some alternative embodiments of this embodiment, the concentration of the chloride in the first solution is any one or the range between any two of 0.5 mg / ml, 1 mg / ml, 1.5 mg / ml, 2 mg / ml, 2.5 mg / ml, 3 mg / ml, 3.5 mg / ml, 4 mg / ml, 4.5 mg / ml, 5 mg / ml, etc.

[0116] Further, the concentration of the N-type semiconductor material in the second solution is 10 to 100 mg / ml.

[0117] In this embodiment, the thickness of the film layer is related to the concentration of the N-type semiconductor material in the second solution. The more N-type semiconductor material in the second solution, the thicker the film layer; the less N-type semiconductor material in the second solution, the thinner the film layer. The concentration of the N-type semiconductor material in the second solution is 10 to 100 mg / ml to avoid the film layer being too thick or too thin. This application does not limit this here.

[0118] In some alternative embodiments of this embodiment, the concentration of the N-type semiconductor material in the second solution is any one or the range between any two of 10 mg / ml, 20 mg / ml, 30 mg / ml, 40 mg / ml, 50 mg / ml, 60 mg / ml, 70 mg / ml, 80 mg / ml, 90 mg / ml, 100 mg / ml, etc.

[0119] Further, the molar ratio of the N-type semiconductor material to the chloride is (1:1000) to (1:10).

[0120] In this embodiment, the molar ratio of the N-type semiconductor material to the chloride is (1:1000) to (1:10) to avoid the content of the chloride being too low and affecting the water absorption performance.

[0121] In some alternative embodiments of this embodiment, the molar ratio of the N-type semiconductor material to the chloride is any one or the range between any two of 1:1000, 1:900, 1:800, 1:700, 1:600, 1:500, 1:400, 1:300, 1:200, 1:100, 1:10, etc.

[0122] Further, the chloride is selected from at least one of calcium chloride and magnesium chloride.

[0123] Further, the N-type semiconductor material is selected from one or more of doped or undoped zinc oxide, titanium dioxide, tin oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, and the doping elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium.

[0124] In this embodiment, the chloride ions in the chloride are adsorbed on the oxygen vacancies on the surface of the N-type semiconductor material, achieving the effect of passivating the surface defects of the N-type semiconductor material, achieving the effect of passivating the surface defects of the electron functional layer, and further improving the stability of the carrier transport performance of the electron functional layer.

[0125] Further, the first solution further includes a first solvent, and the first solvent is selected from alcohol solvents.

[0126] Optionally, the alcohol solvent includes at least one of methanol, ethanol, isopropanol, propanol, butanol, isobutanol, sec-butanol, tert-butanol, pentanol, 2-methyl-1-butanol, isopentanol, sec-pentanol, 3-pentanol, tert-pentanol, 3-methyl-2-butanol, neopentanol, hexanol, 4-methyl-2-pentanol, 2-hexanol, 2-ethylbutanol, 2-methylpentanol, 2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-ethyl-3-pentanol, 3-hexanol, 4-methyl-1-pentanol, 3,3-dimethyl-2-butanol, heptanol, 2-heptanol, 3-heptanol, 2-methyl-3-hexanol, octanol, 2-octanol, 2-ethylhexanol, 2,5-dimethyl-2,5-hexanediol, 2,2,4-trimethyl-1,3-pentanediol, 4-methyl-3-heptanol, 3,5,5-trimethylhexanol, nonanol, 2-nonanol, 3-nonanol, 2,6-dimethyl-4-heptanol, decanol, undecanol, 5-ethyl-2-nonanol, dodecanol, trimethylnonanol, tetradecanol, pentadecanol, hexadecanol, heptadecanol, octadecanol, cyclopentanol, cyclohexanol, benzyl alcohol, propylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 2-methyl-2-propylene glycol, diethylene glycol, tetraethylene glycol, neopentyl glycol, 1,5-pentanediol, methoxyethanol, ethoxyethanol, propoxyethanol, butoxyethanol, and isobutoxyethanol.

[0127] Further, the second solution further includes a second solvent, and the second solvent is selected from alcohol solvents.

[0128] Optionally, the alcohol solvent includes at least one of methanol, ethanol, isopropanol, propanol, butanol, isobutanol, sec-butanol, tert-butanol, pentanol, 2-methyl-1-butanol, isopentanol, sec-pentanol, 3-pentanol, tert-pentanol, 3-methyl-2-butanol, neopentanol, hexanol, 4-methyl-2-pentanol, 2-hexanol, 2-ethylbutanol, 2-methylpentanol, 2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-ethyl-3-pentanol, 3-hexanol, 4-methyl-1-pentanol, 3,3-dimethyl-2-butanol, heptanol, 2-heptanol, 3-heptanol, 2-methyl-3-hexanol, octanol, 2-octanol, 2-ethylhexanol, 2,5-dimethyl-2,5-hexanediol, 2,2,4-trimethyl-1,3-pentanediol, 4-methyl-3-heptanol, 3,5,5-trimethylhexanol, nonanol, 2-nonanol, 3-nonanol, 2,6-dimethyl-4-heptanol, decanol, undecanol, 5-ethyl-2-nonanol, dodecanol, trimethylnonanol, tetradecanol, pentadecanol, hexadecanol, heptadecanol, octadecanol, cyclopentanol, cyclohexanol, benzyl alcohol, propylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 2-methyl-2-propylene glycol, diethylene glycol, tetraethylene glycol, neopentyl glycol, 1,5-pentanediol, methoxyethanol, ethoxyethanol, propoxyethanol, butoxyethanol, isobutoxyethanol.

[0129] In an optionally implemented Example A2, the step of mixing the first solution and the second solution to obtain a mixed solution and depositing the mixed solution on the optoelectronic conversion layer to form an electron functional layer specifically includes: after mixing the first solution and the second solution to obtain a mixed solution, disposing the mixed solution on the optoelectronic conversion layer and performing a drying treatment to obtain an electron functional layer.

[0130] In an optionally implemented Example B2, the step of depositing the first solution on the optoelectronic conversion layer to form a functional layer and depositing the second solution on the functional layer to form an electron functional layer specifically includes: disposing the first solution on the optoelectronic conversion layer and performing a drying treatment to obtain a functional layer, and disposing the second solution on the functional layer and performing a drying treatment to obtain an electron functional layer.

[0131] In an optionally implemented Example C2, the step of depositing the second solution on the optoelectronic conversion layer to form an electron functional layer and depositing the first solution on the electron functional layer to form a functional layer specifically includes: disposing the second solution on the optoelectronic conversion layer and performing a drying treatment to obtain an electron functional layer, and disposing the first solution on the electron functional layer and performing a drying treatment to obtain a functional layer.

[0132] In an optionally implemented embodiment D2, the steps of depositing the first solution on the optoelectronic conversion layer to form a functional layer, depositing the second solution on the functional layer to form an electron functional layer, and depositing the first solution on the electron functional layer to form a functional layer specifically include: disposing the first solution on the optoelectronic conversion layer and performing a drying process to obtain a functional layer, disposing the second solution on the functional layer and performing a drying process to obtain an electron functional layer, and disposing the first solution on the electron functional layer and performing a drying process to obtain a functional layer.

[0133] Further, the temperature of the drying process is 80 - 130 °C.

[0134] In some optional implementation manners of this embodiment, the temperature of the drying process is any one of 80 °C, 85 °C, 90 °C, 95 °C, 100 °C, 105 °C, 110 °C, 115 °C, 120 °C, 125 °C, 130 °C, etc., or the range between any two of them.

[0135] Further, the time of the drying process is 5 - 20 min.

[0136] In some optional implementation manners of this embodiment, the time of the drying process is any one of 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, 11 min, 12 min, 13 min, 14 min, 15 min, 16 min, 17 min, 18 min, 19 min, 20 min, etc., or the range between any two of them.

[0137] The above - mentioned solution is further described below with specific implementation examples. The preferred embodiments of the present invention are described in detail as follows:

[0138] Example 1

[0139] Step 1: Place the ITO glass substrate successively in detergent, deionized water, acetone, ethanol, and deionized water, and perform ultrasonic treatment for 15 min each time, and then dry at 100 °C to obtain an anode;

[0140] Step 2: Spin - coat a layer of quantum dots on the wafer after Step 1. The thickness of the optoelectronic conversion layer is 15 nm, the annealing temperature is 100 °C, and the time is 5 min; among them, the quantum dots are blue quantum dots, the quantum dots are dispersed in OCT solvent, and the concentration is 20 mg / mL;

[0141] Step 3: Provide a first solution containing a chloride and a second solution containing an N-type semiconductor material, and mix the first solution and the second solution to obtain a mixture. The chloride is selected from calcium chloride, the concentration of the chloride in the first solution is 3 mg / ml, the N-type semiconductor material is selected from zinc oxide, and the concentration of zinc oxide in the second solution is 30 mg / ml;

[0142] Step 4: Spin-coat a layer of the mixture on the wafer after Step 2 and perform a drying treatment to obtain an electronic functional layer. The drying treatment temperature is 100 °C and the time is 5 min, and the thickness of the electronic functional layer is 30 nm;

[0143] Step 5: Transfer the wafer of Step 4 to an evaporation machine and evaporate 100 nm of Ag to obtain a cathode.

[0144] Example 2

[0145] The difference from Example 1 is that before Step 5, the electronic functional layer is also treated under a set atmosphere; wherein, the temperature of the set atmosphere is 10 °C, the relative humidity is 45%, the set atmosphere is air, and the time for treating the electronic functional layer under the set atmosphere is 30 min.

[0146] Example 3

[0147] The difference from Example 2 is that the concentration of the N-type semiconductor material in the first solution is 40 mg / ml.

[0148] Example 4

[0149] The difference from Example 2 is that the chloride is selected from magnesium chloride.

[0150] Example 5

[0151] The difference from Example 2 is that the temperature of the set atmosphere is 25 °C and the relative humidity is 70%.

[0152] Example 6

[0153] The difference from Example 2 is that the time for treating the electronic functional layer under the set atmosphere is 10 min.

[0154] Example 7

[0155] Step 1: Place the ITO glass substrate successively in detergent, deionized water, acetone, ethanol, and deionized water and ultrasonicate for 15 min each time, and then dry at 100 °C to obtain an anode;

[0156] Step 2: Spin-coat a layer of quantum dots on the wafer after Step 1. The thickness of the optoelectronic conversion layer is 15 nm, the annealing temperature is 100 °C, and the time is 5 min. Among them, the quantum dots are blue quantum dots, which are dispersed in OCT solvent with a concentration of 20 mg / mL.

[0157] Step 3: Provide a first solution containing chloride and a second solution containing an N-type semiconductor material. Among them, the chloride is selected from magnesium chloride, and the concentration of the chloride in the first solution is 3 mg / ml. The N-type semiconductor material is selected from zinc oxide, and the concentration of zinc oxide in the second solution is 30 mg / ml.

[0158] Step 4: Spin-coat a layer of the second solution on the wafer after Step 2 and perform a drying treatment to obtain an electron functional layer. Among them, the temperature of the drying treatment is 120 °C and the time is 10 min. Spin-coat a layer of the first solution on the electron functional layer and perform a drying treatment to obtain a functional layer. Among them, the temperature of the drying treatment is 120 °C and the time is 10 min. The thickness of the electron functional layer is 30 nm, and the thickness of the functional layer is 2 nm.

[0159] Step 5: Transfer the wafer of Step 4 to an evaporation machine and evaporate 100 nm of Ag to obtain a cathode.

[0160] Example 8

[0161] The difference from Example 7 is that before Step 5, the functional layer is also treated in a set atmosphere. Among them, the temperature of the set atmosphere is 10 °C, the relative humidity is 45%, the set atmosphere is air, and the time for treating the electron functional layer in the set atmosphere is 10 min.

[0162] Example 9

[0163] The difference from Example 8 is that the N-type semiconductor material is selected from titanium dioxide.

[0164] Example 10

[0165] The difference from Example 8 is that the chloride is selected from calcium chloride.

[0166] Example 11

[0167] The difference from Example 8 is that the temperature of the set atmosphere is 15 °C and the relative humidity is 70%.

[0168] Example 12

[0169] The difference from Example 8 is that the time for treating the electron functional layer in the set atmosphere is 30 min.

[0170] Example 13

[0171] Step 1: Place the ITO glass substrate successively in detergent, deionized water, acetone, ethanol, and deionized water, and ultrasonicate for 15 min each time. Then dry at 100 °C to obtain the anode.

[0172] Step 2: Spin-coat a layer of quantum dots on the film obtained after Step 1. The thickness of the optoelectronic conversion layer is 15 nm, the annealing temperature is 100 °C, and the time is 5 min. Among them, the quantum dots are blue quantum dots, the quantum dots are dispersed in OCT solvent, and the concentration is 20 mg / mL.

[0173] Step 3: Provide a first solution containing a chloride and a second solution containing an N-type semiconductor material. Among them, the chloride is selected from calcium chloride, the concentration of the chloride in the first solution is 3 mg / ml, the N-type semiconductor material is selected from zinc oxide, and the concentration of zinc oxide in the second solution is 30 mg / ml.

[0174] Step 4: Spin-coat a layer of the first solution on the film obtained after Step 2 and perform a drying treatment to obtain a functional layer. Among them, the temperature of the drying treatment is 100 °C and the time is 15 min; spin-coat a layer of the second solution on the functional layer and perform a drying treatment to obtain an electron functional layer. Among them, the temperature of the drying treatment is 120 °C and the time is 10 min; the thickness of the electron functional layer is 30 nm, and the thickness of the functional layer is 2 nm.

[0175] Step 5: Transfer the film of Step 4 to an evaporation machine and evaporate 100 nm of Ag to obtain the cathode.

[0176] Example 14

[0177] The difference from Example 13 is that before Step 5, the electron functional layer is also treated in a set atmosphere. Among them, the temperature of the set atmosphere is 25 °C, the relative humidity is 50%, the set atmosphere is air, and the time for treating the electron functional layer in the set atmosphere is 10 min.

[0178] Example 15

[0179] The difference from Example 14 is that the chloride is selected from magnesium chloride.

[0180] Example 16

[0181] The difference from Example 14 is that the concentration of the chloride in the first solution is 4 mg / ml.

[0182] Example 17

[0183] It is different from Example 14 in that a second solution is spin-coated on the functional layer and dried to obtain an electronic functional layer, where the drying temperature is 120 °C and the time is 30 min.

[0184] Example 18

[0185] It is different from Example 13 in that in Step 4, a first solution is also spin-coated on the electronic functional layer and dried to obtain a functional layer, where the drying temperature is 100 °C and the time is 10 min.

[0186] Example 19

[0187] It is different from Example 18 in that before Step 5, the functional layer is also placed in a set atmosphere for treatment, where the temperature of the set atmosphere is 10 °C, the relative humidity is 45%, the set atmosphere is air, and the time for placing the electronic functional layer in the set atmosphere for treatment is 10 min.

[0188] Example 20

[0189] It is different from Example 19 in that the chloride is selected from calcium chloride.

[0190] Example 21

[0191] It is different from Example 19 in that the concentration of the chloride in the first solution is 4 mg / ml.

[0192] Comparative Example 1

[0193] Step 1: The ITO glass substrate is successively placed in detergent, deionized water, acetone, ethanol, and deionized water and ultrasonically treated for 15 min each time, and then dried at 100 °C to obtain an anode;

[0194] Step 2: A layer of quantum dots is spin-coated on the wafer after Step 1, the thickness of the photoelectric conversion layer is 15 nm, the annealing temperature is 100 °C, and the time is 5 min; among them, the quantum dots are blue quantum dots, the quantum dots are dispersed in OCT solvent, and the concentration is 20 mg / mL;

[0195] Step 3: Provide a second solution containing an N-type semiconductor material, the N-type semiconductor material is selected from zinc oxide, and the concentration of zinc oxide in the second solution is 30 mg / ml; a second solution is spin-coated on the wafer after Step 2 and dried to obtain an electronic functional layer, where the drying temperature is 120 °C and the time is 10 min, and the thickness of the electronic functional layer is 30 nm.

[0196] Step 4: Transfer the wafer from Step 3 to an evaporation machine and evaporate 100 nm of Ag to obtain the cathode.

[0197] Comparative Example 2:

[0198] The difference from Comparative Example 1 is that the electronic functional layer is also treated under a set atmosphere. Among them, the temperature of the set atmosphere is 25 °C, the relative humidity is 50%, the set atmosphere is air, and the treatment time of the electronic functional layer under the set atmosphere is 10 min.

[0199] Experimental test and analysis: Perform performance tests on the optoelectronic devices prepared in Examples 1 to 21 and Comparative Examples 1 and 2. The results are shown in Table 1:

[0200] Table 1

[0201]

[0202]

[0203] As can be seen from Example 2 and Comparative Example 1 in Table 1, for Example 1 in which the electronic functional layer is prepared using a mixed solution doped with chloride, compared with Comparative Example 1 in which the electronic functional layer is prepared using the second solution without chloride doping, its carrier transport efficiency is significantly improved, indicating that chloride further improves the efficiency of water penetration into the film surface. Oxygen and water are embedded in the N-type semiconductor material to form a specific hybrid structure, thereby achieving the injection balance of carriers in the electronic functional layer and effectively improving the carrier transport performance of the electronic functional layer; thereby achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0204] As can be seen from Example 1 and Example 2 in Table 1, for Example 2 prepared by treatment under a set atmosphere, compared with Example 1 prepared without treatment under a set atmosphere, its carrier transport efficiency is significantly improved, indicating that treatment under a set atmosphere can balance the injection of carriers in the electronic functional layer and effectively improve the carrier transport performance of the electronic functional layer.

[0205] As can be seen from Example 2 and Comparative Example 2 in Table 1, although both Comparative Example 2 and Example 2 treat the electronic functional layer under a set atmosphere, Comparative Example 2 uses the second solution without chloride doping to prepare the electronic functional layer, while the carrier mobility, luminous efficiency, and service life of Example 2 are all better than those of Comparative Example 2, indicating that chloride further improves the efficiency of water penetration into the film surface. Oxygen and water are embedded in the N-type semiconductor material to form a specific hybrid structure, thereby achieving the injection balance of carriers in the electronic functional layer and effectively improving the carrier transport performance of the electronic functional layer; thereby achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0206] In addition, after adjusting the concentration of the N-type semiconductor material in the first solution, the treatment time of the electron functional layer in a set atmosphere, and the humidity and temperature of the set atmosphere, Examples 3 to 6 still show a significant improvement in carrier transport efficiency compared to Examples 1 and 2 that were not treated in the set atmosphere.

[0207] It should be noted that the concentration of the N-type semiconductor material in the first solution is related to the thickness of the electron functional layer, while the carrier mobility is independent of the thickness of the electron functional layer. Therefore, the carrier mobility of Example 3 is not much different from that of Example 1.

[0208] As can be seen from Example 7 and Comparative Example 1 in Table 1, for Example 7 in which a functional layer was prepared on the electron functional layer using a second solution doped with chloride, compared to Comparative Example 1 in which a functional layer was not prepared on the electron functional layer using a second solution doped with chloride, its carrier mobility, luminous efficiency, and service life were significantly improved. This shows that the chloride ions in the chloride adsorb on the oxygen vacancies on the surface of the N-type semiconductor material, and by passivating the surface defects of the N-type semiconductor material, the effect of passivating the surface defects of the electron functional layer is achieved, further improving the stability of the carrier transport performance of the electron functional layer, and thus achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0209] As can be seen from Example 7 and Example 8 in Table 1, for Example 8 in which the functional layer was treated in a set atmosphere, compared to Example 7 in which the functional layer was not treated in the set atmosphere, its carrier transport efficiency, luminous efficiency, and service life were significantly improved. This shows that treating the functional layer in a set atmosphere can improve the efficiency of water penetration into the surface of the film layer, thereby effectively improving the carrier transport performance of the electron functional layer, and enabling the chloride ions in the chloride to adsorb on the oxygen vacancies on the surface of the N-type semiconductor material. By passivating the surface defects of the N-type semiconductor material, the effect of passivating the surface defects of the electron functional layer is achieved, further improving the stability of the carrier transport performance of the electron functional layer, and thus achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0210] As can be seen from Example 8 and Comparative Example 2 in Table 1, for Example 8 where the functional layer is processed in a set atmosphere, compared with Comparative Example 2 where the electronic functional layer is processed in a set atmosphere, its carrier mobility, luminous efficiency, and service life are all improved. This shows that the chloride further improves the efficiency of water penetration into the film surface, thereby effectively improving the carrier transport performance of the electronic functional layer. And the chloride ions in the chloride adsorb on the oxygen vacancies on the surface of the N-type semiconductor material, achieving the effect of passivating the surface defects of the electronic functional layer by passivating the surface defects of the N-type semiconductor material, further improving the stability of the carrier transport performance of the electronic functional layer, and thus achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0211] In addition, after adjusting the chloride, N-type semiconductor material, the processing time of the functional layer in a set atmosphere, and the humidity and temperature of the set atmosphere, the carrier transport efficiency of Examples 9 to 12 is still significantly improved compared with Comparative Examples 1 and 2 with only the electronic functional layer.

[0212] As can be seen from Example 13 and Comparative Example 1 in Table 1, for Example 13 with a functional layer provided between the electronic functional layer and the photoelectric conversion layer, compared with Comparative Example 1 without a functional layer provided between the electronic functional layer and the photoelectric conversion layer, there are significant improvements in the quantum transport efficiency, device life, and carrier mobility of the device. This shows that the chloride ions in the chloride can replace the long-chain ligands in the photoelectric conversion layer, which can improve the injection of carriers into the quantum dots, effectively improving the carrier transport performance of the electronic functional layer, and thus enhancing the luminous efficiency and service life of the device.

[0213] As can be seen from Example 14 and Example 13 in Table 1, for Example 14 where the electronic functional layer is processed in a set atmosphere, compared with Example 13 without the electronic functional layer processed in a set atmosphere, its carrier transport efficiency is significantly improved, indicating that processing the electronic functional layer in a set atmosphere can effectively improve the luminous efficiency and service life of the device.

[0214] As can be seen from Example 14 and Comparative Example 2 in Table 1, for Example 8 where the functional layer is processed in a set atmosphere, compared with Comparative Example 2 where the electronic functional layer is processed in a set atmosphere, its carrier mobility, luminous efficiency, and service life are all improved. This shows that oxygen and water are embedded in the N-type semiconductor material to form a specific hybrid structure, achieving the injection balance of carriers in the electronic functional layer, effectively improving the carrier transport performance of the electronic functional layer; and thus achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0215] In addition, after adjusting the chloride, concentration, and drying time, the luminous efficiency and device life of the devices of Examples 15 to 17 are still significantly improved compared to Comparative Examples 1 and 2.

[0216] It can be seen from Example 18 and Example 13 in Table 1 that Example 19 in which a functional layer is arranged on the electronic functional layer has significantly improved quantum transmission efficiency and device life compared to Example 13 in which a functional layer is not arranged on the electronic functional layer, indicating that the chloride ions selected from the chloride are adsorbed on the oxygen vacancies on the surface of the N-type semiconductor material, thereby achieving the effect of the functional layer passivating the surface defects of the electronic functional layer, improving the carrier transmission stability of the electronic functional layer, and thereby achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0217] It can be seen from Example 19 and Example 18 in Table 1 that Example 19, in which the electronic functional layer is provided with a functional layer treated under a set atmosphere, has a significantly improved carrier transport efficiency compared to Example 18, in which the electronic functional layer is provided with a functional layer not treated under a set atmosphere. This indicates that the chloride further improves the efficiency of water penetration into the surface of the film layer, thereby effectively improving the carrier transport performance of the electronic functional layer, and causing the chloride ions in the chloride to be adsorbed on the oxygen vacancies on the surface of the N-type semiconductor material. By passivating the surface defects of the N-type semiconductor material, the surface defects of the electronic functional layer are passivated, thereby further improving the stability of the carrier transport performance of the electronic functional layer, thereby achieving the purpose of adjusting the luminous efficiency and service life of the optoelectronic device.

[0218] In addition, after adjusting the chloride concentration, the luminous efficiency and device life of the devices in Examples 20 and 21 are still significantly improved compared to Comparative Examples 1 and 2.

[0219] Obviously, the embodiments described above are only some embodiments of the present application, rather than all embodiments. The preferred embodiments of the present application are given in the accompanying drawings, but they do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive. Although the present application is described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions recorded in the aforementioned specific implementation methods, or to perform equivalent replacement of some of the technical features therein. Any equivalent structure made using the contents of the specification and drawings of this application, directly or indirectly used in other related technical fields, is similarly within the scope of patent protection of this application.

Claims

1. A optoelectronic device, comprising an anode, a photoelectric conversion layer, and a cathode that are sequentially stacked, characterized in that, It further includes a functional layer, wherein, the functional layer is located between the optoelectronic conversion layer and the cathode, or between the optoelectronic conversion layer and the anode, and the material of the functional layer includes chloride.

2. The optoelectronic device according to claim 1, wherein The optoelectronic device further includes an electron functional layer; wherein, the electron functional layer is the functional layer, and the electron functional layer is located between the optoelectronic conversion layer and the cathode; or the electron functional layer is located between the optoelectronic conversion layer and the cathode, and the functional layer is disposed between the optoelectronic conversion layer and the electron functional layer; or the electron functional layer is located between the optoelectronic conversion layer and the cathode, and the functional layer is disposed between the electron functional layer and the cathode; or the electron functional layer is located between the optoelectronic conversion layer and the cathode, and the functional layer is disposed between the optoelectronic conversion layer and the electron functional layer, and between the electron functional layer and the cathode.

3. The optoelectronic device according to claim 2, wherein the thickness of the electron functional layer is 15 - 100 nm; and / or, when the optoelectronic device includes the electron functional layer and the functional layer, the thickness of the functional layer is 1 - 5 nm.

4. The optoelectronic device according to claim 2, wherein The chloride is selected from at least one of calcium chloride and magnesium chloride; and / or, the material of the electron functional layer is selected from N-type semiconductor materials, and the N-type semiconductor materials are selected from one or more of doped or undoped zinc oxide, titanium dioxide, tin oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanate oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, and the doping elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium; and / or, the anode is selected from one or more of a metal electrode, a silicon carbide electrode, a doped or undoped metal oxide electrode, and a composite electrode; the cathode is selected from a metal electrode; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon carbide electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene, and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or A hole functional layer is provided between the optoelectronic conversion layer and the anode. The hole functional layer includes a hole transport layer and / or a hole injection layer. When the hole functional layer includes a hole transport layer and a hole injection layer arranged in a stack, the hole transport layer is disposed adjacent to the optoelectronic conversion layer, and the hole injection layer is disposed adjacent to the anode; the material of the hole transport layer and / or the hole injection layer includes at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal stannides, doped graphene, undoped graphene, and C60; and / or, The optoelectronic conversion layer is a quantum dot light-emitting layer. The materials of the quantum dot light-emitting layer include at least one of single-structure quantum dots and core-shell structure quantum dots. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are respectively selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds include but are not limited to one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include but are not limited to one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds include but are not limited to one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compounds include but are not limited to at least one of CuInS2, CuInSe2, and AgInS2.

5. A method for preparing an optoelectronic device, characterized in that, Comprising: providing an anode having an optoelectronic conversion layer and a first solution containing a chloride; depositing the first solution on the optoelectronic conversion layer to form a functional layer; fabricating a cathode on the functional layer to obtain an optoelectronic device.

6. The method for preparing an optoelectronic device according to claim 5, wherein the step of depositing the first solution on the optoelectronic conversion layer to form a functional layer comprises: Provide a second solution containing an N-type semiconductor material; Mix the first solution and the second solution to obtain a mixture, and deposit the mixture on the optoelectronic conversion layer to form an electron functional layer; or Deposit the first solution on the optoelectronic conversion layer to form a functional layer, and deposit the second solution on the functional layer to form an electron functional layer; or Deposit the second solution on the optoelectronic conversion layer to form an electron functional layer, and deposit the first solution on the electron functional layer to form a functional layer; or Deposit the first solution on the optoelectronic conversion layer to form a functional layer, deposit the second solution on the functional layer to form an electron functional layer, and deposit the first solution on the electron functional layer to form a functional layer.

7. The method for preparing an optoelectronic device according to claim 5 or 6, characterized in that, Before the step of preparing the cathode on the functional layer, it further includes: Treat the functional layer in a set atmosphere.

8. The manufacturing method of the optoelectronic device according to claim 7, characterized in that, The time for treating the functional layer in the set atmosphere is 5 to 60 min; and / or, The temperature of the set atmosphere is 0 °C to 40 °C; and / or, The relative humidity of the set atmosphere is 20 to 99%; and / or, The set atmosphere is at least one of air or water vapor.

9. The method for preparing an optoelectronic device according to claim 6, wherein The concentration of the chloride in the first solution is 0.5 to 5 mg / ml; and / or, The concentration of the N-type semiconductor material in the second solution is 10 to 100 mg / ml; and / or, The molar ratio of the N-type semiconductor material to the chloride is (1:1000) to (1:10); and / or, The chloride is selected from at least one of calcium chloride and magnesium chloride; and / or, The N-type semiconductor material is selected from one or more of doped or undoped zinc oxide, titanium dioxide, tin oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, and the doping elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium.

10. A display device, characterized in that, It includes the optoelectronic device according to any one of claims 1 to 4, or includes the optoelectronic device prepared by using the method for preparing an optoelectronic device according to any one of claims 5 to 9.

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