Display device

By forming a high resistance part on the first electrode of the organic light emitting display device and using an insulating layer to isolate the reflective layer, the problem of electrode contacting again during the repair process is solved, the repair reliability is improved, the light reflection characteristics of the reflective layer are protected, and the production energy consumption is optimized.

CN120239461APending Publication Date: 2025-07-01LG DISPLAY CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202411489586.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-12-29
Filing Date
2024-10-24
Publication Date
2025-07-01

AI Technical Summary

Technical Problem

When the existing organic light emitting display device repairs foreign object defects, it is easy for the first electrode to contact the second electrode again due to the push of the second electrode, resulting in the failure of the repair process and may damage the light reflection characteristics of the reflective layer.

Method used

A high resistance part is provided on the first electrode of the organic light emitting element. By gathering high current during the repair process, a high resistance part is formed to block the electrical connection, and the reflective layer is isolated through the insulating layer to avoid direct contact and ensure that the electrical connection between the electrodes is disconnected.

Benefits of technology

Effectively prevent electrodes from contacting again during the repair process, improve repair reliability, reduce repair failures, protect the light reflection characteristics of the reflective layer, and optimize production energy consumption.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN120239461A_ABST
    Figure CN120239461A_ABST
Patent Text Reader

Abstract

According to one aspect of the present disclosure, a display device may include: a substrate; a transistor disposed on the substrate; a coating layer disposed on the transistor; a reflective layer disposed on the coating layer; an insulating layer disposed on the coating layer and the reflective layer; and an organic light emitting element disposed on the insulating layer and electrically connected to the transistor. The organic light-emitting element may include an anode, a light-emitting portion, and a cathode, wherein the anode is made of a transparent conductive oxide and is integrally a conductor.
Need to check novelty before this filing date? Find Prior Art

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0196628, filed with the Korean Intellectual Property Office on December 29, 2023, the entire contents of which are hereby incorporated by reference in their entirety into this application. Technical Field

[0003] The present disclosure relates to a display device, and more particularly, to a display device having improved repair reliability. Background Art

[0004] Unlike a liquid crystal display device, an organic light - emitting display device does not require a separate light source and can thus be manufactured as a light - weight and thin display device. In addition, since the organic light - emitting display device operates at a low voltage, it has an advantage in power consumption. Further, since the organic light - emitting display device is excellent in color realization, response speed, viewing angle, and contrast ratio (CR), it is being studied as a next - generation display device.

[0005] An organic light - emitting display device refers to a display device that emits light autonomously. An organic light - emitting display device refers to a display device using an organic light - emitting element that injects electrons and holes from a cathode for injecting electrons and an anode for injecting holes into a light - emitting layer, and emits light when excitons generated by coupling the injected electrons and holes drop from an excited state to a ground state.

[0006] According to the direction of light emission, the organic light - emitting display device can be classified into a top - emission type display device, a bottom - emission type display device, and a dual - emission type display device. According to the operation method, the organic light - emitting display device can be classified into a passive matrix type display device and an active matrix type display device. Summary of the Invention

[0007] An object to be achieved by the present disclosure is to provide a display device capable of improving the repair reliability against foreign matter defects.

[0008] Another object to be achieved by the present disclosure is to provide a display device that can minimize or prevent repair failures without a separate additional process and can optimize the process by reducing production energy consumption.

[0009] The objects of the present disclosure are not limited to the above - mentioned objects, and those skilled in the art can clearly understand other objects not mentioned above from the following description.

[0010] A display device according to an embodiment of the present disclosure includes: a substrate; a transistor disposed on the substrate; a coating layer disposed on the transistor; a reflective layer disposed on the coating layer; an insulating layer disposed on the coating layer and the reflective layer; and an organic light-emitting element disposed on the insulating layer, the organic light-emitting element being electrically connected to the transistor and including an anode, a light-emitting portion, and a cathode, wherein the anode is made of a transparent conductive oxide and is a conductor as a whole.

[0011] A display device according to another embodiment of the present disclosure includes: a substrate; a transistor disposed on the substrate; a coating layer disposed on the transistor; a reflective layer disposed on the coating layer; an insulating layer disposed on the coating layer and the reflective layer; and an organic light-emitting element disposed on the insulating layer, the organic light-emitting element being electrically connected to the transistor and including an anode, a light-emitting portion, and a cathode, wherein the anode is made of a transparent conductive oxide and includes a low-resistance portion and a high-resistance portion, and the high-resistance portion has a higher resistance value than the low-resistance portion.

[0012] Other details of the exemplary embodiments of the present disclosure are included in the detailed description and the drawings.

[0013] According to the effects of the present disclosure, it is possible to minimize or prevent the limitation that the first electrode and the second electrode may come into contact with each other again due to the second electrode being pushed during the repair process related to foreign object defects, thereby causing the repair process to possibly fail.

[0014] According to the effects of the present disclosure, even if the second electrode is pushed after the repair process related to foreign object defects, it is possible to maintain the electrical connection between the first electrode and the second electrode being disconnected without an additional process.

[0015] The effects according to various aspects of the present disclosure are not limited to the above-exemplified content, and more various effects are included in the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other aspects, features, and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0017] Figure 1 is a top plan view of a display device according to an embodiment of the present disclosure;

[0018] Figure 2 is Figure 1 a cross-sectional view taken along line A-A' in

[0019] Figures 3A to 3E is a view for explaining a process of manufacturing a display device according to an embodiment of the present disclosure;

[0020] Figure 4A andFigure 4B is an enlarged cross-sectional view of a portion where a foreign object defect occurs in a display device according to an embodiment;

[0021] Figure 5 is a cross-sectional view of a display device according to another embodiment of the present disclosure; and

[0022] Figure 6 is a cross-sectional view of a display device according to still another embodiment of the present disclosure. Detailed Embodiments

[0023] Advantages and features of the present disclosure and methods for achieving these advantages and features will be clear by referring to the exemplary embodiments described in detail below in conjunction with the accompanying drawings. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided only as examples, so that those skilled in the art can fully understand the disclosure of the present disclosure and the scope of the present disclosure.

[0024] The shapes, sizes, ratios, angles, quantities, etc. shown in the drawings for describing the exemplary embodiments of the present disclosure are only examples, and the present disclosure is not limited thereto. Throughout the disclosure, like reference numerals generally denote like elements. In addition, in the following description of the present disclosure, detailed descriptions of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure. Terms such as "comprising", "having", and "including" used herein are generally intended to allow the addition of other components, unless these terms are used together with the term "only". Any reference to the singular may include the plural unless otherwise explicitly stated.

[0025] Even if not explicitly stated, components are interpreted as including a normal error range.

[0026] When terms such as "on", "above", "below", and "adjacent to" are used to describe the positional relationship between two parts, unless these terms are used together with the term "immediately" or "directly", one or more parts may be located between the two parts.

[0027] When an element or layer is disposed "on" another element or layer, it may be directly on the other element or layer or another layer or another element may be interposed therebetween.

[0028] Although terms such as "first", "second", etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components and may not limit the order of the sequence. Therefore, the first component to be mentioned below may be the second component in the technical concept of the present disclosure.

[0029] Throughout the disclosure, like reference numerals generally represent like elements.

[0030] For ease of description, the dimensions and thicknesses of each component shown in the drawings are illustrated. The present disclosure is not limited to the dimensions and thicknesses of the components shown. In addition, the term "may" fully encompasses all meanings and scopes of the term "might".

[0031] The features of the various embodiments of the present disclosure may be partially or fully dependent on or combined with each other and may be interlocked and operated in technically different ways, and the embodiments may be performed independently of or in relation to each other.

[0032] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the drawings. All components of each display device according to all embodiments of the present disclosure are operably coupled and configured.

[0033] Figure 1 is a top plan view of a display device according to an embodiment of the present disclosure. Figure 2 is along Figure 1 sectional view taken along line A-A' in

[0034] Referring to Figure 1 and Figure 2 , the display device 100 includes a lower substrate 110, a transistor 120, an organic light-emitting element 130, and an upper substrate 150.

[0035] Referring to Figure 1 , the lower substrate 110 is configured to support and protect several constituent elements of the display device 100. The lower substrate 110 may be made of a flexible plastic material. Additionally, the lower substrate 110 may be made of a transparent insulating material. For example, the lower substrate 110 may be made of transparent polyimide (PI).

[0036] The lower substrate 110 includes a display area AA (or an active area) and a non-display area NA (or a non-active area). The non-display area NA may completely or only partially surround the display area AA.

[0037] The display area AA may be disposed at a central portion of the lower substrate 110. The display area AA may be an area where an image is displayed in the display device 100. Various display elements and various driving elements for operating the display elements may be disposed in the display area AA. For example, the display element may be configured as an organic light-emitting element 130 including a first electrode 131, a light-emitting portion 132, and a second electrode 133. Additionally, various driving elements such as transistors, capacitors, lines, etc., configured to operate the display elements may be disposed in the display area AA.

[0038] A plurality of sub-pixels SP can be set in the display area AA. Each of the plurality of sub-pixels SP can be an area where a plurality of gate lines arranged along a first direction and a plurality of data lines arranged along a second direction different from the first direction intersect. In this case, the first direction can be based on Figure 1 the horizontal direction, and the second direction can be based on Figure 1 the vertical direction. However, the present disclosure is not limited thereto. The plurality of sub-pixels SP can include a plurality of first sub-pixels SP1, a plurality of second sub-pixels SP2, and a plurality of third sub-pixels SP3 that emit light beams of different colors. For example, the plurality of first sub-pixels SP1 can be red sub-pixels, the plurality of second sub-pixels SP2 can be green sub-pixels, and the plurality of third sub-pixels SP3 can be blue sub-pixels. However, the plurality of sub-pixels SP can also include a fourth sub-pixel as a white sub-pixel. However, the present disclosure is not limited thereto.

[0039] The sub-pixel SP is the smallest unit that constitutes an image. Each of the plurality of sub-pixels SP can include an organic light-emitting element 130 and a driving element. The driving element can include a switching transistor, a driving transistor, etc. The driving element can be electrically connected to signal lines, such as gate lines and data lines connected to a gate driver and a data driver provided in the non-display area NA.

[0040] The non-display area NA can be provided in the peripheral area of the lower substrate 110. The non-display area NA can be an area where no image is displayed. The non-display area NA can be provided to surround the display area AA. Various constituent elements for operating the plurality of sub-pixels SP provided in the display area AA can be provided in the non-display area NA. For example, a driving IC, a driving circuit, signal lines, a flexible film, etc. configured to provide signals for operating the plurality of sub-pixels SP can be provided. The driving IC can include a gate driver, a data driver, etc. The driving IC and the driving circuit can be provided by an in-panel gate (GIP) method, a chip-on-film (COF) method, a tape automated bonding (TAB) method, a tape carrier package (TCP) method, a chip-on-glass (COG) method, etc.

[0041] Hereinafter, with reference to Figure 2 a more detailed description will be given of the plurality of sub-pixels SP provided in the display area AA of the display device 100 according to an embodiment of the present disclosure.

[0042] Refer to together Figure 1 and Figure 2, the display device 100 according to an embodiment of the present disclosure may include a lower substrate 110, a buffer layer 111, a gate insulating layer 112, an interlayer insulating layer 113, a passivation layer 114, a transistor 120, a coating layer 115, a reflective layer ML, an insulating layer 116, an organic light-emitting element 130, a bank 117, a packaging layer 118, a color filter CF, a black matrix BM, a bonding member 119, and an upper substrate 150.

[0043] Referring to Figure 2 , the buffer layer 111 is disposed on the lower substrate 110. The buffer layer 111 may improve the bonding force between the lower substrate 110 and the layer formed on the buffer layer 111. In addition, the buffer layer 111 may block the leakage of alkaline materials from the lower substrate 110 and inhibit the diffusion of moisture and / or oxygen permeating from the outside of the lower substrate 110. The buffer layer 111 may be configured as a single layer or multiple layers made of silicon nitride (SiNx) or silicon oxide (SiOx). However, the present disclosure is not limited thereto. In addition, depending on the type and material of the lower substrate 110, the structure and type of the transistor 120, etc., the buffer layer 111 may not be included.

[0044] The transistor 120 may be disposed on the buffer layer 111 and operate the organic light-emitting element 130. The transistor 120 may be disposed in each of the plurality of sub-pixels SP in the display area AA. The transistor 120 disposed in each of the plurality of sub-pixels SP may be used as a driving element of the display device 100. For example, the transistor 120 may be a thin film transistor (TFT), an N-channel metal oxide semiconductor (NMOS) transistor, a P-channel metal oxide semiconductor (PMOS) transistor, a complementary metal oxide semiconductor (CMOS) transistor, a field effect transistor (FET), etc. However, the present disclosure is not limited thereto. Hereinafter, a description will be made on the assumption that the transistor 120 is a thin film transistor. However, the present disclosure is not limited thereto.

[0045] The transistor 120 includes an active layer 121, a gate electrode 122, a source electrode 123, and a drain electrode 124. Figure 2 The illustrated transistor 120 is a thin film transistor having a top gate structure in which the gate electrode 122 is disposed on the active layer 121. However, the present disclosure is not limited thereto. The transistor 120 may be implemented as a thin film transistor having a bottom gate structure.

[0046] The active layer 121 of the transistor 120 is disposed on the buffer layer 111. The active layer 121 is a region where a channel is formed when the transistor 120 operates. The active layer 121 may be made of an oxide semiconductor, amorphous silicon (a-Si), polycrystalline silicon (poly-Si), an organic semiconductor, etc. However, the present disclosure is not limited thereto.

[0047] The gate insulating layer 112 is disposed on the active layer 121. The gate insulating layer 112 may be configured as a single layer or multiple layers made of silicon nitride (SiNx) or silicon oxide (SiOx) as an inorganic material. The gate insulating layer 112 has contact holes through which the source electrode 123 and the drain electrode 124 are respectively in contact with the source region and the drain region of the active layer 121. As Figure 2 shown, the gate insulating layer 112 may be formed over the entire surface of the lower substrate 110 or patterned to have the same width as the gate electrode 122. However, the present disclosure is not limited thereto.

[0048] The gate electrode 122 is disposed on the gate insulating layer 112. The gate electrode 122 is disposed on the gate insulating layer 112 and overlaps with the channel region of the active layer 121. The gate electrode 122 may be made of any one of the following various metal materials and alloys of two or more of these metal materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu). Alternatively, the gate electrode 122 may be configured as a multi-layer made of the following various metal materials and alloys of two or more of these metal materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu). However, the present disclosure is not limited thereto.

[0049] The interlayer insulating layer 113 is disposed on the gate electrode 122. The interlayer insulating layer 113 may be configured as a single layer or multiple layers made of silicon nitride (SiNx) or silicon oxide (SiOx) as an inorganic material. The interlayer insulating layer 113 has contact holes through which the source electrode 123 and the drain electrode 124 are respectively in contact with the source region and the drain region of the active layer 121.

[0050] The source electrode 123 and the drain electrode 124 are disposed on the interlayer insulating layer 113. The source electrode 123 and the drain electrode 124 are electrically connected to the active layer 121 through the contact holes of the gate insulating layer 112 and the contact holes of the interlayer insulating layer 113. Each of the source electrode 123 and the drain electrode 124 may be made of any one of the following various metal materials and alloys of two or more of these metal materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, the source electrode 123 and the drain electrode 124 may each be configured as a multilayer made of the following various metal materials and alloys of two or more of these metal materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). However, the present disclosure is not limited thereto.

[0051] For ease of explanation, Figure 2 only the driving transistor among the various transistors 120 included in the display device 100 is shown. However, other transistors such as switching transistors may also be provided.

[0052] Referring to Figure 2 , a passivation layer 114 for protecting the transistor 120 is disposed on the transistor 120. The passivation layer 114 has a contact hole through which the drain electrode 124 of the transistor 120 is exposed. Figure 2 It is shown that a contact hole is formed in the passivation layer 114 to expose the drain electrode 124. However, a contact hole may be formed to expose the source electrode 123. The passivation layer 114 may be configured as a single layer or a multilayer made of silicon nitride (SiNx) or silicon oxide (SiOx). However, according to an embodiment, the passivation layer 114 may not be included.

[0053] A coating layer 115 for planarizing the upper portion of the transistor 120 is disposed on the passivation layer 114. The coating layer 115 has a contact hole through which the drain electrode 124 of the transistor 120 is exposed. Figure 2 It is shown that a contact hole is formed in the coating layer 115 to expose the drain electrode 124. However, a contact hole may be formed to expose the source electrode 123. The coating layer 115 may be made of one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polystyrene resin, polyphenylene sulfide resin, benzocyclobutene, and photoresist. However, the present disclosure is not limited thereto.

[0054] The reflective layer ML is disposed on the coating layer 115. The reflective layer ML is disposed in each of the plurality of sub-pixels SP. The reflective layer ML is disposed to correspond to each of the first electrodes 131 of the organic light-emitting elements 130 disposed in the plurality of sub-pixels SP. The reflective layer MLs disposed in the plurality of sub-pixels SP are disposed to be spaced apart from each other. Accordingly, the reflective layer ML is disposed at the outer periphery of each of the plurality of sub-pixels SP and exposes the top surface of the coating layer 115.

[0055] The reflective layer ML is disposed below the first electrode 131 of the organic light-emitting element 130 in each of the plurality of sub-pixels SP. The reflective layer ML is electrically floating. For example, the reflective layer ML may be configured not to be electrically connected to other constituent elements such as the organic light-emitting element 130 and the transistor 120. The reflective layer ML is disposed to allow the light emitted from the light-emitting portion 132 to propagate toward the upper side of the display device 100. For example, the reflective layer ML may be made of a reflective metal material including silver (Ag) and may be configured as a multilayer. However, the present disclosure is not limited thereto.

[0056] The insulating layer 116 is disposed on the coating layer 115 and the reflective layer ML. The insulating layer 116 is disposed on the top surface of the coating layer 115 exposed with respect to the reflective layer ML, and the insulating layer 116 is disposed to cover the side surface and the top surface of the reflective layer ML. The insulating layer 116 electrically insulates the reflective layer ML and the first electrode 131.

[0057] For example, the insulating layer 116 may be made of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx) or an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polystyrene resin, polyphenylene sulfide resin, benzocyclobutene, and photoresist. However, the present disclosure is not limited thereto.

[0058] The organic light-emitting element 130 is disposed on the coating layer 115 and the insulating layer 116. The organic light-emitting element 130 includes: a first electrode 131 formed on the coating layer 115 and the insulating layer 116 and electrically connected to the drain electrode 124 of the transistor 120, a light-emitting portion 132 disposed on the first electrode 131, and a second electrode 133 formed on the light-emitting portion 132. In this case, the first electrode 131 may be an anode electrode and the second electrode 133 may be a cathode electrode.

[0059] The first electrode 131 is disposed on the coating layer 115 and the insulating layer 116. The first electrode 131 is arranged to cover the top surface of the coating layer 115 and the side and top surfaces of the insulating layer 116. The first electrode 131 is electrically connected to the drain electrode 124 of the transistor 120 through a contact hole formed in the passivation layer 114 and the covering layer 115. For example, the first electrode 131 can be electrically connected to the transistor 120 while being in direct contact with the transistor 120. Thus, the organic light-emitting element 130 can be connected to the transistor 120.

[0060] Figure 2 It is shown that the first electrode 131 is electrically connected to the drain electrode 124 of the transistor 120 through a contact hole. However, depending on the type of the transistor 120, the design method of the driving circuit, etc., the first electrode 131 can be electrically connected to the source electrode 123 of the transistor 120 through a contact hole.

[0061] The first electrode 131 can be made of a transparent conductive oxide. For example, the first electrode 131 can be made of a transparent conductive oxide such as indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO), including indium (In). However, the present disclosure is not limited thereto.

[0062] In addition, the first electrode 131 can be configured to be partially electrically disconnected and thus serve as a repair portion for repairing a sub-pixel SP having a foreign matter defect. However, a method for repairing a sub-pixel SP having a foreign matter defect will be described in detail below with reference to Figures 3A to 4B A method for repairing a sub-pixel SP having a foreign matter defect will be described in detail.

[0063] Meanwhile, Figure 2 A normal sub-pixel SP that does not have a foreign matter defect and has not undergone a repair process is shown. In this case, since the first electrodes 131 provided in the sub-pixels SP that do not have a foreign matter defect have not undergone a repair process, all of these first electrodes 131 can be conductors.

[0064] The bank 117 is disposed on the first electrode 131 and the coating layer 115. The bank 117 can cover the edge of the first electrode 131 of the organic light-emitting element 130 and define a light-emitting region. The bank 117 can be provided between adjacent sub-pixels SP to reduce color mixing of light beams emitted from the organic light-emitting elements 130 in the plurality of sub-pixels SP.

[0065] The bank 117 can be made of an organic material. For example, the bank 117 can be made of a polyimide resin, an acrylic resin, or a benzocyclobutene resin. However, the present disclosure is not limited thereto.

[0066] The light-emitting part 132 is disposed on the first electrode 131 and the bank 117. For example, the light-emitting part 132 may be a light-emitting layer that emits light of any one of red, green, blue, and white. In addition, the light-emitting part 132 may further include various layers, such as a hole transport layer, a hole injection layer, a hole blocking layer, an electron injection layer, an electron blocking layer, and an electron transport layer. However, the present disclosure is not limited thereto.

[0067] The second electrode 133 is disposed on the light-emitting part 132. The second electrode 133 may supply electrons to the light-emitting part 132. The second electrode 133 may be made of a conductive material having a low work function. The second electrode 133 may be configured to allow the light emitted from the light-emitting part 132 to propagate toward the upper side of the display device 100. For example, the second electrode 133 may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), or an alloy thereof. However, the present disclosure is not limited thereto.

[0068] Meanwhile, an inorganic insulating layer for protecting the second electrode 133 may be disposed on the second electrode 133. For example, the inorganic insulating layer may be configured as a single layer or multiple layers made of silicon nitride (SiNx) or silicon oxide (SiOx). However, the present disclosure is not limited thereto.

[0069] Referring to Figure 2 , the encapsulation layer 118 is disposed on the organic light-emitting element 130. The encapsulation layer 118 may cover the organic light-emitting element 130. The encapsulation layer 118 may protect the organic light-emitting element 130 from external moisture, oxygen, impact, etc. The encapsulation layer 118 may be formed by alternately stacking a plurality of inorganic layers and a plurality of organic layers. For example, the inorganic layer may be made of an inorganic material such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (AlOx). The organic layer may be made of an epoxy-based polymer or an acrylic polymer. However, the present disclosure is not limited thereto.

[0070] The color filter CF and the black matrix BM are disposed on the encapsulation layer 118.

[0071] The color filter CF may be disposed in each of the plurality of sub-pixels SP. The black matrix BM may be disposed at the boundaries between the plurality of sub-pixels SP. Therefore, the black matrix BM may separate the plurality of sub-pixels SP and the color filter CF disposed in the sub-pixels SP, thereby reducing color mixing between the plurality of sub-pixels SP.

[0072] For example, when the light emitted from the light-emitting unit 132 is white light, the color filter CF converts the light emitted from the sub-pixel SP into red light, green light, and blue light. For example, the first color filter CF1 provided in the first sub-pixel SP1 serving as a red sub-pixel may be a red color filter. Additionally, the second color filter CF2 serving as a green color filter may be provided in the second sub-pixel SP2 serving as a green sub-pixel, and the third color filter CF3 serving as a blue color filter may be provided in the third sub-pixel SP3 serving as a blue sub-pixel. However, the present disclosure is not limited thereto.

[0073] For example, the black matrix BM may be made of chromium (Cr) or other opaque metal films, or made of resin. However, the present disclosure is not limited thereto.

[0074] The upper substrate 150 is disposed above the color filter CF and the black matrix BM. The upper substrate 150 together with the encapsulation layer 118 may protect the organic light-emitting element 130 from external moisture, oxygen, impact, etc. For example, the upper substrate 150 may be made of a transparent insulating material, and the display device 100 may be configured as a top-emission type display device 100. However, the present disclosure is not limited thereto.

[0075] A bonding member 119 is disposed between the color filter CF and the black matrix BM and the upper substrate 150. The bonding member 119 may bond the color filter CF and the black matrix BM to the upper substrate 150. The bonding member 119 may be made of a material having bonding properties. The bonding member 119 may be a thermosetting or naturally curable type adhesive. For example, the bonding member 119 may be an optically clear adhesive (OCA), a pressure-sensitive adhesive (PSA), etc. However, the present disclosure is not limited thereto.

[0076] Hereinafter, with reference to Figures 3A to 4B The process of manufacturing a display device according to an embodiment of the present disclosure and a method of repairing defective sub-pixels, the defects of which may be caused by foreign substances during the manufacturing process, will be described in more detail.

[0077] Specifically, Figures 3A to 3E is a view for explaining the process of manufacturing a display device according to an embodiment of the present disclosure. Figure 4A and Figure 4B is an enlarged cross-sectional view of a portion where a foreign substance defect appears in a display device according to an embodiment.

[0078] For example, during the manufacturing process of a display device, a short circuit (A-C short circuit) may occur between the anode and the cathode of an organic light-emitting element due to foreign substances remaining between the anode and the cathode. As a result, a black spot defect may occur where current cannot be applied to the organic light-emitting element. Therefore, when the cathode is connected to the anode through foreign substances generated during the manufacturing process, a repair process may be performed to separate the cathode from the anode. For example, the repair process may include an R2 aging process of separating the cathode from the anode by applying a high voltage to the cathode.

[0079] Referring to Figures 3A to 3E , the display device 100 according to an embodiment of the present disclosure is configured to repair a defective sub-pixel, which may be caused by foreign substances during the manufacturing process.

[0080] First, referring to Figure 3A , a transistor 120 is disposed on the lower substrate 110. A passivation layer 114 for protecting the transistor 120 is disposed on the transistor 120, and a coating layer 115 for planarizing the upper portion of the transistor 120 is disposed on the transistor 120. A reflective layer ML is disposed on the coating layer 115, and an insulating layer 116 for insulating the reflective layer is disposed on the coating layer 115. In this case, the insulating layer 116 is disposed to expose the top surface of the coating layer 115. In addition, contact holes are formed in the passivation layer 114 and the cover layer 115 to expose a part of the drain electrode 124 of the transistor 120, and the first electrode 131 of the organic light-emitting element 130 is disposed on the exposed part of the drain electrode 124 to be connected to the transistor 120. Next, a bank 117 is disposed to cover the edge of the first electrode 131. The bank 117 may be disposed on the coating layer 115 and the top surface of the first electrode 131 to expose a part of the top surface of the first electrode 131.

[0081] Meanwhile, foreign substances P may adhere to the surface of the first electrode 131 exposed by the bank 117. For example, the foreign substances P may be generated through a process of patterning the material for forming the first electrode 131 or a process of etching the insulating material layer for forming the bank 117. However, the present disclosure is not limited thereto.

[0082] Next, referring to Figure 3B, a light-emitting portion 132 is provided on the first electrode 131 and the bank 117. The light-emitting portion 132 can be continuously provided on the top surface of the first electrode 131, as well as on the side surface and the top surface of the bank 117, and is provided in all of the plurality of sub-pixels SP. Meanwhile, in a portion where the foreign matter P is disposed, there may be a portion where the light-emitting portion 132 cannot cover the top surface of the first electrode 131 due to the foreign matter P. For example, the top surface of the first electrode 131 may be exposed through the light-emitting portion 132. However, in a case where the thickness of the foreign matter P is much smaller than the thickness of the light-emitting portion 132, the foreign matter P may not affect the constituent elements to be stacked during subsequent processes. However, the present disclosure is not limited thereto.

[0083] Next, referring to Figure 3C , a second electrode 133 is provided on the light-emitting portion 132. The second electrode 133 can be provided together with the light-emitting portion 132 in all of the plurality of sub-pixels SP. Various constituent elements other than the upper substrate 150 for sealing the display device 100 are provided above the second electrode 133. For example, the encapsulation layer 118, the color filter CF1, and the black matrix BM are provided above the second electrode 133. Although, Figure 3C illustrates that the color filter CF1 and the black matrix BM are provided on the encapsulation layer 118 during the manufacturing process of the display device 100. However, the color filter CF and the black matrix BM can be provided on the encapsulation layer 118 during the process of bonding the upper substrate 150 and the lower substrate 110 after the color filter CF and the black matrix BM are formed on the upper substrate 150. However, the present disclosure is not limited thereto.

[0084] In this case, the second electrode 133 provided on the light-emitting portion 132 may have an opening portion where the second electrode 133 cannot be provided due to the foreign matter P. Meanwhile, the second electrode 133 is actually provided on the top surface of the first electrode 131 that is exposed through the light-emitting portion 132. Since the first electrode 131 and the second electrode 133 that are in contact with each other are electrically connected as described above, a short circuit may occur when the display device operates. For example, an A-C short circuit may occur due to the foreign matter P attached to the top surface of the first electrode 131.

[0085] Therefore, referring to Figure 3D, after the process of forming various constituent elements of the display device 100 except for the upper substrate 150, a process of repairing the second electrode 133 connected to the first electrode 131 is performed. For example, the process of repairing the second electrode 133 connected to the first electrode 131 can use the R2 aging method, which separates the first electrode 131 and the second electrode 133 by applying a high voltage to the second electrode 133 and deforming the first electrode 131 and the second electrode 133 by using the high current concentrated on the portion where the second electrode 133 and the first electrode 131 are in contact with each other. In this case, the second electrode 133 deformed due to the high current can open at the peripheral portion of the foreign matter P. In addition, the end portion of the second electrode 133 in the open portion can be set to face away from the first electrode 131, that is, set to face upward. However, the present disclosure is not limited thereto.

[0086] Meanwhile, since the high current concentrated in the portion where the second electrode 133 and the first electrode 131 are in contact with each other during the R2 aging process generates resistive heat (Joule heating), a high-resistance portion 131b can be formed on the first electrode 131. The high-resistance portion 131b can be formed by a process in which the distance between indium (In) particles included in the first electrode 131 increases due to high temperature, and the volume of the corresponding portion also increases. In this case, the portion of the first electrode 131 where the high-resistance portion 131b is not formed can be referred to as a low-resistance portion 131a. For example, the thickness of the high-resistance portion 131b can be greater than the thickness of the low-resistance portion 131a. Compared with the low-resistance portion 131a, the thickness of the high-resistance portion 131b can be increased by about 10% to 20%. However, the present disclosure is not limited thereto.

[0087] Meanwhile, the indium (In) density of the high-resistance portion 131b, which is the portion where the distance between indium (In) particles increases, can be lower than the indium (In) density of the low-resistance portion 131a. For example, the indium (In) density of the low-resistance portion 131a can be higher than the indium (In) density of the high-resistance portion 131b.

[0088] The high-resistance portion 131b may have a higher resistance value than the low-resistance portion 131a. For example, when the first electrode 131 is made of indium zinc oxide (IZO), oxygen (O2) may be adsorbed by the first electrode 131 due to high temperature, and the first electrode 131 may crystallize and oxidize, which can increase the resistance value. In this case, when the first electrode 131 made of indium zinc oxide (IZO) is heat-treated by resistive heat of 350 °C or higher, the first electrode 131 may have a surface resistance (Rs) of 1.4×10^4 Ω or higher. When the first electrode 131 is heat-treated at a temperature of 450 °C or higher, the first electrode 131 may have a surface resistance (Rs) of 1.64×10^4 Ω or higher. Meanwhile, the surface resistance (Rs) of the low-resistance portion 131a, which is a portion not subjected to resistive heat, may be about 4.67×10^(-4) Ω or lower. For example, compared with the low-resistance portion 131a, the resistance value of the high-resistance portion 131b may increase significantly, and the movement of current may also decrease. Therefore, in the high-resistance portion 131b, the electrical connection may be substantially blocked.

[0089] Finally, referring to Figure 3E , after the process of repairing the second electrode 133 connected to the first electrode 131, the bonding member 119 and the upper substrate 150 are bonded and disposed above the second electrode 133 and various components of the display device 100, and these components of the display device 100 are sealed, thereby completing the process of manufacturing the display device 100.

[0090] In this case, during the process of bonding the upper substrate 150 and the second electrode 133, the second electrode 133 spaced apart from the first electrode 131 may be pushed, such that the first electrode 131 and the second electrode 133 may be set to be adjacent to each other again. Additionally, when the physical deformation of the second electrode 133 for separating the first electrode 131 and the second electrode 133 during the repair process cannot be smoothly performed, the first electrode 131 and the second electrode 133 may still be set in a state where the first electrode 131 and the second electrode 133 are adjacent to each other. However, in the display device 100 according to an embodiment of the present disclosure, the high-resistance portion 131b is provided on the first electrode 131 and surrounds at least a part of the peripheral portion of the foreign matter P during the process of repairing the second electrode 133 connected to the first electrode 131. Therefore, even after the repair process, if the first electrode 131 and the second electrode 133 are not separated from each other, or the first electrode 131 and the second electrode 133 are adjacent to each other because the first electrode 131 is pushed against the second electrode 133, since the second electrode 133 is adjacent to the high-resistance portion 131b of the first electrode 131, the electrical connection between the second electrode 133 and the first electrode 131 can be substantially blocked.

[0091] Meanwhile, referring to Figure 4A and Figure 4B , in the display device 100 in the final product state, the second electrode 133 may be disposed on the first electrode 131 and spaced apart from the first electrode 131 as shown in Figure 4A , or the second electrode 133 may be disposed adjacent to the high resistance portion 131b as shown in Figure 4B . The case where the second electrode 133 is disposed spaced apart from the first electrode 131 as shown in Figure 4A is a case where the second electrode 133 is not pushed during the process of bonding the upper substrate 150. In addition, the case where the second electrode 133 is disposed adjacent to the high resistance portion 131b as shown in Figure 4B is a case where the first electrode 131 and the second electrode 133 do not separate from each other even after the repair process or the second electrode 133 is pushed during the process of bonding the upper substrate 150. During the process of manufacturing the display device 100, the second electrode 133 may be set to any of the shapes in Figure 4A and Figure 4B according to the manufacturing process. However, in both cases, the first electrode 131 and the second electrode 133 may be configured such that they are not electrically connected to each other.

[0092] Therefore, in the display device 100 according to an embodiment of the present disclosure, even if the first electrode 131 and the second electrode 133 do not separate from each other after the repair process related to the foreign object defect, or the second electrode 133 is pushed after the repair process, the electrical connection between the first electrode 131 and the second electrode 133 can be maintained as disconnected without an additional process, so that the repair failure can be minimized without an additional additional process.

[0093] Referring to Figure 4A and Figure 4B, the first electrode 131 and the reflective layer ML can be spaced apart from each other and electrically insulated by the insulating layer 116. Therefore, during the process of disposing the high-resistance portion 131b on the first electrode 131, the reflective layer ML can be not damaged. For example, in the case where the first electrode 131 is disposed on the reflective layer ML so as to be in direct contact with the reflective layer ML, the reflective layer ML in contact with the first electrode 131 may be deformed due to the resistive heat generated when high current accumulates at the portion where the second electrode 133 and the first electrode 131 are in contact with each other during the R2 aging process, and the light reflection characteristics of the reflective layer ML may deteriorate. In this case, in the display device 100 according to an embodiment of the present disclosure, the first electrode 131 and the reflective layer ML are spaced apart from each other by the insulating layer 116 such that the reflective layer ML may not be in direct contact with the second electrode 133. Therefore, during the process of disposing the high-resistance portion 131b on the first electrode 131 during the repair process, damage to the reflective layer ML can be minimized.

[0094] For example, during the process of manufacturing a display device, a short circuit (A-C short circuit) may occur between the anode and the cathode due to foreign substances remaining between the anode and the cathode of the organic light-emitting element. Therefore, a black spot defect may occur where current cannot be applied to the organic light-emitting element. The repair process of separating the cathode from the anode when the cathode is connected to the anode due to foreign substances generated during the manufacturing process can be performed by selectively repairing only the portions of the anode and the cathode of the light-emitting element that may be defective due to foreign substances. For example, the repair process may include an R2 aging process of separating the cathode from the anode by applying a high voltage to the cathode. Compared with a repair method in which a plurality of light-emitting elements are provided in one sub-pixel and only the connection of the defective light-emitting elements is blocked, the above repair process is advantageous in minimizing the non-light-emitting region.

[0095] However, after the R2 aging process, since the end portions where the cathode and the anode have been spaced apart are pushed during the process of bonding the upper substrate 150, the anode and the cathode may be adjacent to each other again, and the anode and the cathode may be short-circuited again due to the cathode being pushed as described above. For this reason, a problem that the repair process fails may occur.

[0096] Therefore, in the display device 100 according to an embodiment of the present disclosure, the electrical connection of the first electrode 131 can be partially blocked, which can improve the reliability of the repair process related to foreign substance defects.

[0097] Specifically, the first electrode 131 may be made of a transparent conductive oxide. In addition, a process of repairing an A-C short circuit caused when the first electrode 131 and the second electrode 133 are adjacent to each other due to a foreign substance P is performed by applying a high voltage to the second electrode 133 during the manufacturing process of the display device 100. In this case, a high current may be concentrated between the first electrode 131 and the second electrode 133 that are set to be adjacent to each other due to the foreign substance P, and the first electrode 131 and the second electrode 133 may be deformed due to the high current, such that the first electrode 131 and the second electrode 133 may be spaced apart from each other. In this case, a high-resistance portion 131b where the electrical connection is substantially blocked by resistive heat is formed on the first electrode 131. Therefore, even if the first electrode 131 and the second electrode 133 are again adjacent to each other because the first electrode 131 and the second electrode 133 are not spaced apart from each other even after the repair process or because the second electrode 133 is pushed during the process of bonding the upper substrate 150 after the repair process, since the second electrode 133 is set to be adjacent to the high-resistance portion 131b of the first electrode 131, the electrical connection between the first electrode 131 and the second electrode 133 can be kept disconnected.

[0098] Therefore, the following problem can be minimized: the repair fails because the first electrode 131 and the second electrode 133 are not spaced apart from each other even after the repair process, or because the first electrode 131 and the second electrode 133 are short-circuited again due to the second electrode 133 being pushed. Therefore, in the display device 100 according to an embodiment of the present disclosure, the first electrode 131 is configured such that a high-resistance portion 131b where the electrical connection is partially disconnected during the repair process is provided. Therefore, the problem of repair failure caused by the second electrode 133 being pushed during the repair process related to the foreign substance defect can be minimized, and the reliability of the repair process related to the foreign substance defect can be improved.

[0099] Figure 5 is a cross-sectional view of a display device according to another embodiment of the present disclosure. Except that the reflective layer ML and the first electrode 531 are electrically connected, Figure 5 the display device 500 in Figures 1 to 4B is substantially the same in configuration as the display device 100 in

[0100] Referring to Figure 5, an organic light-emitting element 530 including a first electrode 531, a light-emitting part 132, and a second electrode 133 is disposed on the reflective layer ML. The reflective layer ML and the first electrode 531 are spaced apart from each other by an insulating layer 516. The reflective layer ML and the first electrode 531 are disposed to be electrically connected. The first electrode 531 is disposed on the top surface of the reflective layer ML exposed through a contact hole formed in the insulating layer 516. In this case, the contact hole through which the reflective layer ML contacts the first electrode 531 may be disposed to overlap with the bank 517. For example, the contact hole through which the reflective layer ML contacts the first electrode 531 may be disposed so as not to overlap with the light-emitting region defined by the bank 517 in the organic light-emitting element 530. However, the present disclosure is not limited thereto.

[0101] In a display device 500 according to another embodiment of the present disclosure, the reflective layer ML and the first electrode 531 are disposed to be spaced apart from each other by the insulating layer 516. Accordingly, the reflective layer ML can be prevented from being damaged during the repair process.

[0102] Specifically, the first electrode 531 and the reflective layer ML may be spaced apart from each other by the insulating layer 516. Accordingly, the reflective layer ML can be prevented from being damaged during the process of disposing a high-resistance portion on the first electrode 531. For example, in the case where the first electrode 531 is disposed on the reflective layer ML so as to be in direct contact with the reflective layer ML, the reflective layer ML in contact with the first electrode 531 may be deformed due to the resistive heat generated when high current accumulates at the portion where the second electrode 133 and the first electrode 531 are in contact with each other during the R2 aging process, and the light reflection characteristics of the reflective layer ML may deteriorate. In this case, in the display device 500 according to another embodiment of the present disclosure, the first electrode 531 and the reflective layer ML are spaced apart from each other, and the reflective layer ML does not adjoin the second electrode 133, which can minimize the damage to the reflective layer ML during the repair process.

[0103] Meanwhile, in a display device 500 according to another embodiment of the present disclosure, the reflective layer ML and the first electrode 531 may be configured to be electrically connected through a contact hole formed in the insulating layer 516. Accordingly, the electrical characteristics of the first electrode 531 can be improved by reducing the resistance of the first electrode 531. The reflective layer ML and the first electrode 531 are arranged to be spaced apart from each other by the insulating layer 516 such that the reflective layer ML is not damaged during the repair process. In this case, the reflective layer ML and the first electrode 531 may be configured to be electrically connected through a contact hole formed in the insulating layer 516. Accordingly, even though the reflective layer ML and the first electrode 531 are arranged to be spaced apart from each other, since the reflective layer ML and the first electrode 531 may be configured to be electrically connected through a contact hole formed in the insulating layer 516, the resistance of the first electrode 531 electrically connected to the reflective layer ML can be reduced, thereby improving the electrical characteristics of the first electrode 531.

[0104] Figure 6 is a cross-sectional view of a display device according to still another embodiment of the present disclosure. Except for the material of the second electrode 633, Figure 6 the display device 600 in Figures 1 to 4B is substantially the same in configuration as the display device 100 in Figure 6 shows a portion that has undergone a repair process due to foreign substances generated in the display device 600. The portion where no foreign substances are generated may be the same as the portion of the display device 100 in Figures 1 to 4B

[0105] Referring to Figure 6 , the second electrode 633 may be made of a material including indium (In). For example, the second electrode 633 may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). However, the present disclosure is not limited thereto.

[0106] The second electrode 633 may be configured to be partially electrically disconnected and thus serve as a repair portion for repairing a sub-pixel SP having a foreign substance defect.

[0107] ​When a foreign object P adheres to the top surface of the first electrode 131 during the manufacturing process of the display device 600, the second electrode 633 may also be disposed on the top surface of the first electrode 131 exposed through the light-emitting unit 132. Therefore, since the first electrode 131 and the second electrode 633 are in contact with each other and electrically connected to each other, a short circuit may occur when the display device operates. Therefore, during the manufacturing process of the display device 600, a process of repairing the second electrode 633 connected to the first electrode 131 is performed. For example, the process of repairing the second electrode 633 connected to the first electrode 131 may use an R2 aging method, which deforms the first electrode 131 and the second electrode 633 by applying a high voltage to the second electrode 633 and using the high current concentrated on the portion where the second electrode 633 and the first electrode 131 are in contact with each other, so as to separate the first electrode 131 and the second electrode 633.

[0108] In this case, since the high current concentrated in the portion where the second electrode 633 and the first electrode 131 are in contact with each other generates resistive heat (Joule heating), a high-resistance portion 131b may be formed on the first electrode 131, and a second resistive portion 633b may be formed on the second electrode 633. The high-resistance portion 131b and the second resistive portion 633b may be formed through a process in which a diffusion phenomenon occurs in which the distance between indium (In) particles included in the first electrode 131 and the second electrode 633 increases due to high temperature, and the volume of the corresponding portion also increases. In this case, the portion of the first electrode 131 where the high-resistance portion 131b is not formed may be referred to as a low-resistance portion 131a. In addition, the portion of the second electrode 633 where the second resistive portion 633b is not formed may be referred to as a first resistive portion 633a.

[0109] Meanwhile, the thickness of the high-resistance portion 131b may be greater than the thickness of the low-resistance portion 131a. The thickness of the second resistive portion 633b may be greater than the thickness of the first resistive portion 633a. The thicknesses of the high-resistance portion 131b and the second resistive portion 633b may each increase by about 10% to 20% compared to the low-resistance portion 131a and the first resistive portion 633a, respectively. However, the present disclosure is not limited thereto.

[0110] In addition, the indium (In) density of the high-resistance portion 131b, which is a portion where the distance between indium (In) particles increases, may be lower than the indium (In) density of the low-resistance portion 131a. Further, the indium (In) density of the second resistance portion 633b, which is a portion where the distance between indium (In) particles increases, may be lower than the indium (In) density of the first resistance portion 633a. For example, the indium (In) density of the low-resistance portion 131a may be higher than the indium (In) density of the high-resistance portion 131b, and the indium (In) density of the first resistance portion 633a may be higher than the indium (In) density of the second resistance portion 633b.

[0111] In a display device 600 according to another embodiment of the present disclosure, the electrical connection between the first electrode 131 and the second electrode 633 may be partially blocked, which may further improve the reliability of the repair process related to foreign object defects.

[0112] Specifically, the first electrode 131 and the second electrode 633 may each be made of a transparent conductive oxide including indium (In). Further, a process of repairing an A-C short circuit caused when the first electrode 131 and the second electrode 633 are adjacent to each other due to a foreign object P is performed by applying a high voltage to the second electrode 633 during the process of manufacturing the display device 600. In this case, a high current may be concentrated between the first electrode 131 and the second electrode 633 that are arranged to be adjacent to each other due to the foreign object P, and the first electrode 131 and the second electrode 633 may be deformed due to the high current, such that the first electrode 131 and the second electrode 633 may be spaced apart from each other. In this case, a high-resistance portion 131b and a second resistance portion 633b in which the electrical connection is substantially blocked by resistive heat are formed on the first electrode 131 and the second electrode 633. Accordingly, even if the first electrode 131 and the second electrode 633 are not spaced apart from each other after the repair process or are pushed against each other again during the process of bonding the upper substrate 150 after the repair process, since the second resistance portion 633b of the second electrode 633 is arranged to be adjacent to the high-resistance portion 131b of the first electrode 131, the electrical connection between the first electrode 131 and the second electrode 633 can be kept disconnected. Accordingly, the problem that the repair fails because the first electrode 131 and the second electrode 633 are not spaced apart from each other after the repair process or because the second electrode 633 and the first electrode 131 are short-circuited again due to the second electrode 133 being pushed can be minimized. Accordingly, in a display device 600 according to another embodiment of the present disclosure, the electrical connection between the first electrode 131 and the second electrode 633 may be partially blocked, which may further improve the reliability of the repair process related to foreign object defects.

[0113] Example embodiments of the present disclosure may also be described as follows:

[0114] According to one aspect of the present disclosure, a display device may include: a substrate; a transistor disposed on the substrate; a coating layer disposed on the transistor; a reflective layer disposed on the coating layer; an insulating layer disposed on the coating layer and the reflective layer; and an organic light-emitting element disposed on the insulating layer, the organic light-emitting element being electrically connected to the transistor and including an anode, a light-emitting portion, and a cathode, wherein the anode is made of a transparent conductive oxide and is a conductor as a whole.

[0115] The insulating layer may cover a side surface and a top surface of the reflective layer.

[0116] An outer periphery of a top surface of the coating layer may be exposed through the reflective layer and the insulating layer.

[0117] The anode may cover a side surface and a top surface of the insulating layer. The anode may be in direct contact with the transistor.

[0118] The reflective layer may be electrically floating. The anode may be electrically connected to the reflective layer through a contact hole formed in the insulating layer.

[0119] The anode may include indium (In). The cathode may include indium (In).

[0120] According to another aspect of the present disclosure, a display device may include: a substrate; a transistor disposed on the substrate; a coating layer disposed on the transistor; a reflective layer disposed on the coating layer; an insulating layer disposed on the coating layer and the reflective layer; and an organic light-emitting element disposed on the insulating layer, the organic light-emitting element being electrically connected to the transistor and including an anode, a light-emitting portion, and a cathode, wherein the anode is made of a transparent conductive oxide and includes a low-resistance portion and a high-resistance portion, and the high-resistance portion has a higher resistance value than the low-resistance portion.

[0121] The high-resistance portion may be arranged to surround at least a part of a periphery of a foreign object placed on the anode.

[0122] A thickness of the high-resistance portion may be greater than a thickness of the low-resistance portion.

[0123] The anode may include indium, and an indium density of the low-resistance portion may be higher than an indium density of the high-resistance portion.

[0124] The cathode may have an opening portion overlapping with the high-resistance portion. The cathode may be disposed on the anode and may be spaced apart from the anode. The cathode may be adjacent to the high-resistance portion.

[0125] The insulating layer may cover a side surface and a top surface of the reflective layer.

[0126] An outer periphery of a top surface of the coating layer may be exposed through the reflective layer and the insulating layer.

[0127] The anode may cover the side surface and the top surface of the insulating layer. The anode may be in direct contact with the transistor.

[0128] The reflective layer may be electrically floating. The anode may be electrically connected to the reflective layer through a contact hole formed in the insulating layer. The cathode may include indium (In).

[0129] Although example embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, the example embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above example embodiments are illustrative in all respects and do not limit the present disclosure. The protection scope of the present disclosure should be construed based on the appended claims, and all technical concepts within the equivalent scope thereof should be construed as falling within the scope of the present disclosure.

Claims

1. A display device, comprising: substrate; a transistor disposed on the substrate; a coating layer disposed on the transistor; A reflective layer disposed on the coating layer; An insulating layer disposed on the coating layer and the reflective layer; as well as an organic light emitting element disposed on the insulating layer, the organic light emitting element being electrically connected to the transistor and comprising an anode, a light emitting portion and a cathode, The anode is made of a transparent conductive oxide and is a conductor as a whole.

2. The display device according to claim 1, wherein: The insulating layer covers side surfaces and a top surface of the reflective layer.

3. The display device according to claim 1, wherein: An outer circumference of a top surface of the coating layer is exposed through the reflective layer and the insulating layer.

4. The display device according to claim 1, wherein: The anode covers side surfaces and a top surface of the insulating layer.

5. The display device according to claim 1, wherein: The anode is in direct contact with the transistor.

6. The display device according to claim 1, wherein: The reflective layer is electrically floating.

7. The display device according to claim 1, wherein: The anode is electrically connected to the reflective layer through a contact hole formed in the insulating layer.

8. The display device according to claim 1, wherein: At least one of the anode and the cathode includes indium.

9. The display device according to claim 1, wherein: The anode and the reflective layer are spaced apart and electrically insulated from each other by the insulating layer.

10. A display device, comprising: substrate; a transistor disposed on the substrate; a coating layer disposed on the transistor; A reflective layer disposed on the coating layer; An insulating layer disposed on the coating layer and the reflective layer; as well as an organic light emitting element disposed on the insulating layer, the organic light emitting element being electrically connected to the transistor and comprising an anode, a light emitting portion and a cathode, The anode is made of a transparent conductive oxide and includes a low resistance portion and a high resistance portion, wherein the high resistance portion has a higher resistance value than the low resistance portion.

11. The display device according to claim 10, wherein: The high resistance portion is provided to surround at least a portion of a periphery of a foreign object placed on the anode.

12. The display device according to claim 10, wherein: The high resistance portion has a thickness greater than a thickness of the low resistance portion.

13. The display device according to claim 10, wherein: The anode includes indium, and an indium density of the low resistance portion is higher than an indium density of the high resistance portion.

14. The display device according to claim 10, wherein: The cathode has an opening portion overlapping the high resistance portion.

15. The display device according to claim 14, wherein: The cathode is disposed on the anode and is spaced apart from the anode.

16. The display device according to claim 14, wherein: The cathode is adjacent to the high resistance portion.

17. The display device according to claim 10, wherein: The insulating layer covers side surfaces and a top surface of the reflective layer.

18. The display device according to claim 10, wherein: An outer circumference of a top surface of the coating layer is exposed through the reflective layer and the insulating layer.

19. The display device according to claim 10, wherein: The anode covers side surfaces and a top surface of the insulating layer.

20. The display device according to claim 10, wherein: The anode is in direct contact with the transistor.

21. The display device according to claim 10, wherein: The reflective layer is electrically floating.

22. The display device according to claim 10, wherein: The anode is electrically connected to the reflective layer through a contact hole formed in the insulating layer.

23. The display device according to claim 10, wherein: The cathode includes indium.

24. The display device according to claim 10, wherein: The anode and the reflective layer are spaced apart and electrically insulated from each other by the insulating layer.