Light emitting display device and method of manufacturing the same

Abstract

The invention discloses a light emitting display device and a method of manufacturing the same. The light emitting display device includes: a substrate including a plurality of sub-pixels; a bank, which is formed along a boundary of a sub-pixel of the plurality of sub-pixels, and which includes a first opening; a first electrode in the first opening and on the bank; a light emitting layer formed on the first electrode and disposed inside the first electrode; a protection pattern having an isolation property, covering edges of the first electrode and the light emitting layer, and including a second opening corresponding to the first opening; and a second electrode in the second opening and on the protection pattern.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0194004, filed in Korea on December 28, 2023, the entire contents of which are incorporated herein by reference for all purposes as if fully set forth herein. Technical field

[0003] The present disclosure relates to a light - emitting display device and a method of manufacturing the light - emitting display device. Background art

[0004] Recently, flat - panel display devices having excellent characteristics such as thinness, lightness, and low power consumption have been widely developed and applied to various fields.

[0005] In a flat - panel display device, a light - emitting display device including a light - emitting element such as a light - emitting diode is a display device in which charges are injected into a light - emitting layer formed between an anode and a cathode to form electron - hole pairs, and then the electron - hole pairs disappear to emit light.

[0006] Generally, the anode of the light - emitting element is formed in a structure covered by a partition, and in this case, there is a problem in that the light - emitting layer deteriorates inwardly, causing the light - emitting area to shrink. Summary of the invention

[0007] An advantage of the present disclosure is to provide a light - emitting display device and a method of manufacturing the light - emitting display device, which can improve the shrinkage of the light - emitting area caused by the deterioration of the inward - developing light - emitting layer.

[0008] Additional features and advantages of the present disclosure will be set forth in the description below, and in part will be apparent from the description, or may be learned by practice of the present disclosure. These and other advantages of the present disclosure will be realized and obtained by the structure particularly pointed out in the written description and its claims, as well as the accompanying drawings.

[0009] To achieve these and other advantages and in accordance with the purpose of the present disclosure, as specifically embodied and broadly described herein, a light - emitting display device includes: a substrate including a plurality of sub - pixels; a partition formed along the boundaries of the sub - pixels among the plurality of sub - pixels, the partition including a first opening; a first electrode in the first opening and on the partition; a light - emitting layer on the first electrode and disposed inside the first electrode; a protection pattern having isolation properties, covering the edges of the first electrode and the light - emitting layer, and including a second opening corresponding to the first opening; and a second electrode in the second opening and on the protection pattern.

[0010] In one aspect, the end portion of the edge of the first electrode may have a shape that protrudes outward from the light-emitting layer and is covered by the protection pattern.

[0011] In another aspect, the second opening may have an area smaller than that of the first opening.

[0012] In another aspect, the first electrode, the light-emitting layer, and the second electrode located in the second opening may have uniform thicknesses.

[0013] In still another aspect, the protection pattern provided at the edge of the sub-pixel may be spaced apart from the protection pattern of an adjacent sub-pixel among the plurality of sub-pixels.

[0014] In another aspect, the protection pattern may have a resistance of 10 12 ohms or greater.

[0015] In still another aspect, the protection pattern may include an inorganic insulating material or a transparent metal oxide.

[0016] In another aspect, a method of manufacturing a light-emitting display device includes: forming a partition wall on a substrate including a plurality of sub-pixels, the partition wall being disposed along a boundary of the sub-pixels among the plurality of sub-pixels and including a first opening; forming a first electrode in the first opening and on the partition wall; forming a light-emitting layer on the first electrode and inside the first electrode; forming a protective pattern having isolation properties, the protective pattern covering edges of the first electrode and the light-emitting layer and including a second opening corresponding to the first opening; and forming a second electrode in the second opening and on the protective pattern.

[0017] In still another aspect, forming the protective pattern may include: forming a protective layer and a photoresist layer over the substrate on which the light-emitting layer is formed; exposing and developing the photoresist layer to form a first photoresist pattern corresponding to the light-emitting layer and a second photoresist pattern corresponding to a boundary between the sub-pixel and an adjacent sub-pixel among the plurality of sub-pixels; performing an etching process on the protective layer to form a first protective layer pattern having an undercut shape under the first photoresist pattern and a second protective layer pattern having an undercut shape under the second photoresist pattern; forming a protective material layer over the substrate on which the first protective layer pattern and the second protective layer pattern are formed; and peeling off the first protective layer pattern and the second protective layer pattern to form the protective pattern as the protective material layer remaining on the substrate.

[0018] In another aspect, the end portion of the edge of the first electrode may have a shape that protrudes outward from the light-emitting layer and is covered by the protection pattern.

[0019] In yet another aspect, the second opening may have an area smaller than that of the first opening.

[0020] In another aspect, the first electrode, the light-emitting layer, and the second electrode located in the second opening may have uniform thicknesses.

[0021] In another aspect, the protection pattern provided at the edge of the sub-pixel may be spaced apart from the protection pattern of an adjacent sub-pixel among the plurality of sub-pixels.

[0022] In yet another aspect, the protection pattern may have a resistance of 10 12 ohms or greater.

[0023] In another aspect, the protection pattern may include an inorganic insulating material or a transparent metal oxide.

[0024] It should be understood that the foregoing disclosure and the following detailed description are both exemplary and explanatory and are intended to provide further explanation of the claimed disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the principles of the disclosure. In the drawings:

[0026] Figure 1 is a plan view schematically showing a light-emitting display device according to an embodiment of the present disclosure;

[0027] Figure 2 is schematically showing Figure 1 a plan view of the planar structure of a sub-pixel.

[0028] Figure 3 is a cross-sectional view taken along line III-III' of Figure 1 ; and

[0029] Figures 4 to 23 is a view schematically showing a method of manufacturing a light-emitting display device according to an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0030] The advantages and features of the present disclosure and the methods of achieving them will be set forth in the following exemplary embodiments described with reference to the accompanying drawings. However, the present disclosure may be embodied in different forms and should not be construed as limited to the embodiments described herein. Instead, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the disclosure to those skilled in the art. In addition, the scope of protection of the present disclosure is defined by the scope of the claims and their equivalents.

[0031] The shapes, dimensions, ratios, angles, and quantities used in the drawings to describe the embodiments of the present disclosure are merely examples. Therefore, the present disclosure is not limited to the details shown. Throughout the specification, unless otherwise stated, the same reference numerals represent the same components.

[0032] In addition, in the following description, when a detailed description of a related known function or configuration may unnecessarily make the subject matter of the present disclosure difficult to understand, the detailed description of such a known function or configuration may be omitted. When using terms such as "comprising," "including," "having," "consisting of," etc. in the present disclosure, one or more other parts may be added unless a more restrictive term such as "only" is used. Singular terms may include plural forms and vice versa, unless otherwise stated.

[0033] When interpreting the elements described herein, even without a separate explicit description, the elements are interpreted as including a margin of error or a range.

[0034] When describing a positional relationship, for example, when the positional relationship between two parts is described as "above," "over," "below," "beside," "beneath," etc., one or more other parts may be positioned between the two parts unless a more restrictive term such as "exactly" or "directly" is used.

[0035] When describing a time relationship, for example, when the time precedence is described as "after," "subsequently," "before," etc., discontinuous cases may be included unless a more restrictive term such as "directly" or "immediately" is used.

[0036] When describing the components of the present disclosure, terms such as "first," "second," etc. may be used. These terms are only used to separately identify the corresponding components and are not intended to limit or restrict the nature, order, sequence, or quantity of the corresponding components.

[0037] The features of the various embodiments of the present disclosure may be partially or fully connected or combined with each other, and may be interlocked and driven in various ways technically, as fully understood by those skilled in the art. Each embodiment may be implemented independently of each other, or may be implemented together in a mutually dependent relationship.

[0038] Hereinafter, example embodiments of the present disclosure will be described in detail with reference to the drawings. At the same time, in the following description, the same and similar reference numerals may be assigned to the same and similar components, and redundant detailed descriptions thereof may be omitted.

[0039] Figure 1 is a plan view schematically showing a light-emitting display device according to an example embodiment of the present disclosure.Figure 2 is a plan view schematically showing Figure 1 the planar structure of sub-pixels. Figure 3 is a cross-sectional view taken along line III-III' of Figure 1 and schematically shows the cross-sectional structure of sub-pixels.

[0040] Generally, the light-emitting display device 10 according to an exemplary embodiment of the present disclosure may include any one of all types of display devices that display an image by using a light-emitting diode OD as a self-light-emitting element.

[0041] In the exemplary embodiment discussed below, for ease of explanation, an organic light-emitting display device is taken as an example of the light-emitting display device 10.

[0042] In addition, the light-emitting display device 10 may be a top-emission type or a bottom-emission type display device. In this embodiment, for ease of explanation, the top-emission type light-emitting display device 10 is taken as an example.

[0043] As Figures 1 to 3 shown, in the light-emitting display device 10 (or the light-emitting display panel of the light-emitting display device 10) of this embodiment, a display area AA for displaying an image and a non-display area NA arranged around the display area AA may be defined.

[0044] The display area AA may include a plurality of sub-pixels SP arranged on a substrate 101 along a plurality of row lines (or horizontal lines) and a plurality of column lines (or vertical lines).

[0045] Meanwhile, a plurality of gate lines (or scan lines) extending in the row direction (or horizontal direction or first direction) and a plurality of data lines extending in the column direction (or vertical direction or second direction) may be formed on the substrate 101. Each sub-pixel SP may be connected to a corresponding gate line and data line.

[0046] In addition, a power supply line for transmitting a high-potential driving voltage and a power supply line for transmitting a low-potential driving voltage may be formed on the substrate 101. The high-potential driving voltage and the low-potential driving voltage are applied to the sub-pixel SP, and during a light-emitting period, a light-emitting current is applied to the light-emitting diode OD of the sub-pixel SP, thereby a light-emitting operation may be performed.

[0047] The multiple sub-pixels SP formed on the substrate 101 may include sub-pixels SP of different colors that constitute the pixel P, and the pixel P is a unit for displaying a color image. In this regard, for example, the multiple sub-pixels SP that constitute the pixel P may include an R sub-pixel SPr, a G sub-pixel SPg, and a B sub-pixel SPb (or a first sub-pixel, a second sub-pixel, and a third sub-pixel) that respectively display a first color, a second color, and a third color (e.g., red (R), green (G), and blue (B)). As another example, the multiple sub-pixels SP that constitute the pixel P may further include a W sub-pixel that displays white.

[0048] In this embodiment, take the case where the pixel P is composed of an R sub-pixel SPr, a G sub-pixel SPg, and a B sub-pixel SPb as an example.

[0049] The R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb can be arranged in various forms. For example, as Figure 1 shown, the sub-pixels SP can be arranged in a stripe pattern, where the sub-pixels SP of the same color are arranged in the column direction, and the sub-pixels SP of different colors are alternately and repeatedly arranged in the row direction, but not limited thereto.

[0050] Meanwhile, in the light-emitting display device 10 of this embodiment, after the partition 160 is formed, the anode 150 is formed, and an edge of the anode 150 can be formed on the partition 160 along the surface of the partition 160.

[0051] The light-emitting layer 165 can be formed on the anode 150 and is substantially disposed inside the anode 150, such that the end portion AE2e of the anode 150 can have a shape that extends (or protrudes) outside the light-emitting layer 165.

[0052] In addition, the edges of the anode 150 and the light-emitting layer 165 can be covered by a high-resistance protection pattern PP. Through the high-resistance protection pattern PP, the anode 150 can be substantially electrically isolated from the surrounding conductive elements.

[0053] According to the planar and cross-sectional arrangement structures of the partition 160, the anode 150, the light-emitting layer 165, and the high-resistance protection pattern PP, the deterioration development in the internal direction of the light-emitting layer 165 can be reduced or prevented, thereby reducing or preventing the shrinkage of the light-emitting area EA. In addition, a short circuit between the anode 150 and the cathode 169 can be structurally prevented. In addition, a lateral leakage current between adjacent sub-pixels SP can be structurally prevented. Furthermore, the luminance deviation according to the position within the sub-pixel SP can be improved.

[0054] Next, refer to Figures 1 to 3 to describe in more detail the structure of the sub-pixel SP of this embodiment that can achieve the above advantages. Meanwhile, in Figure 3In the figure, for the sake of convenience in explanation, one thin-film transistor T formed in the R sub-pixel SPr is shown as an example, and the thin-film transistor T is omitted in the G sub-pixel SPg and the B sub-pixel SPb.

[0055] As Figures 1 to 3 shown, in each sub-pixel SP, a sub-pixel driving circuit including the thin-film transistor T and a light-emitting diode OD can be formed on the substrate 101. At the same time, a plurality of thin-film transistors including the thin-film transistor T can be formed in the sub-pixel driving circuit of each sub-pixel SP, and at least one capacitor can be further formed in the sub-pixel driving circuit of each sub-pixel SP.

[0056] More specifically, a semiconductor layer 112 can be formed on the substrate 101. The semiconductor layer 112 can be formed of amorphous silicon, polycrystalline silicon, or an oxide semiconductor material, but is not limited thereto.

[0057] The semiconductor layer 112 can include a central channel region and source and drain regions on both sides thereof.

[0058] At the same time, a buffer layer 105 can be formed on the substrate 101 and below the semiconductor layer 112.

[0059] The gate insulating layer 115 can be formed on the semiconductor layer 112 as an insulating layer made of an insulating material. The gate insulating layer 115 can be formed of an inorganic insulating material such as silicon oxide or silicon nitride, but is not limited thereto.

[0060] A gate electrode 120 formed of a conductive material such as metal can be formed on the gate insulating layer 115 corresponding to the channel region of the semiconductor layer 112.

[0061] In addition, a gate line connected to the gate electrode of the switching thin-film transistor can be formed on the gate insulating layer 115.

[0062] The interlayer insulating layer 125 can be formed on the gate electrode 120 and the gate line as an insulating layer made of an insulating material.

[0063] The interlayer insulating layer 125 can be formed of an inorganic insulating material such as silicon oxide or silicon nitride or an organic insulating material such as benzocyclobutene or photoacrylic acid, but is not limited thereto.

[0064] The interlayer insulating layer 125 and the gate insulating layer 115 therebelow can include a first semiconductor contact hole CHs1 and a second semiconductor contact hole CHs2 that respectively expose the source and drain regions of the semiconductor layer 112.

[0065] The first semiconductor contact hole CHs1 and the second semiconductor contact hole CHs2 can be located on both sides of the gate electrode 120 and spaced apart from the gate electrode 120.

[0066] A source electrode 131 and a drain electrode 133 made of a conductive material such as metal may be formed on the interlayer insulating layer 125.

[0067] In addition, a data line intersecting the gate line GL and connected to the source electrode of the switching thin film transistor may be formed on the interlayer insulating layer 125.

[0068] The source electrode 131 and the drain electrode 133 may be positioned to be spaced apart from each other with respect to the gate electrode 120, and contact the source region and the drain region of the semiconductor layer 112 through a first semiconductor contact hole CHs1 and a second semiconductor contact hole CHs2, respectively.

[0069] The semiconductor layer 112, the gate electrode 120, the source electrode 131, and the drain electrode 133 configured as described above may form a thin film transistor T.

[0070] As another example, the thin film transistor T may have an inverted staggered structure in which the gate electrode 120 is located below the semiconductor layer 112, and the source electrode 131 and the drain electrode 133 are located above the semiconductor layer 112. An outer coating (or passivation layer) 135 made of an insulating material may be formed on the source electrode 131, the drain electrode 133, and the data line.

[0071] The outer coating 135 may be formed by including at least one of an inorganic insulating material (such as silicon oxide or silicon nitride) and an organic insulating material (such as benzocyclobutene or photoacrylic acid), but is not limited thereto. The outer coating 135 may be formed in a single-layer structure or a multi-layer structure.

[0072] A drain contact hole CHd exposing the drain electrode 133 may be formed in the outer coating 135.

[0073] Meanwhile, the outer coating 135 may have an upper surface (or top surface) having, for example, a substantially flat shape. Accordingly, a light emitting diode OD provided in the light emitting region EA may have a substantially flat shape, such that the sub-pixel SP may achieve uniform light emitting characteristics. On the outer coating 135, a partition 160 may be formed along the boundary of each sub-pixel SP (or the boundary between adjacent sub-pixels SP).

[0074] The partition 160 may be formed of at least one of, for example, an acrylic resin, an epoxy resin, a phenolic resin, a polyamide-based resin, a polyimide-based resin, an unsaturated polyester-based resin, a polyphenylene resin, a polyphenylene sulfide-based resin, benzocyclobutene, and a photoresist, but is not limited thereto.

[0075] The partition bank 160 may have a first opening OP1 for defining a light-emitting region EA, in which light emission occurs within each sub-pixel SP. As described below, the light-emitting region EA of the sub-pixel SP may be defined corresponding to a second opening OP2 within the high-resistance protection pattern PP. Thus, the first opening OP1 may be a space for setting the effective light-emitting region EA therein.

[0076] The portion of the outer coating 135 corresponding to the first opening OP1 of the partition bank 160 may be exposed upward through the first opening OP1.

[0077] On the substrate 101 on which the partition bank 160 is formed, an anode (or first electrode) 150 may be formed for each sub-pixel SP.

[0078] In this regard, the anode 150 of the sub-pixel SP may be formed substantially integrally within the sub-pixel SP and may be formed in a continuous form within the sub-pixel SP. The anode 150 may be physically separated and spaced from the anodes 150 of adjacent sub-pixels SP.

[0079] The anode 150 may be in contact with the drain electrode 133 through a drain contact hole CHd.

[0080] When the light-emitting display device 10 is a top-emission type, the anode 150 may have high reflectivity characteristics by including an opaque metal material. For example, the anode 150 may include one of Ag, Al, Mo, Ti, and an APC (Al-Pd-Cu) alloy, but is not limited thereto.

[0081] Meanwhile, the anode 150 may be formed in a multilayer structure. In this regard, for example, the anode 150 may be formed in a multilayer structure in which a transparent conductive material (e.g., ITO, IZO, IZTO, etc.) is laminated on and / or under the above-mentioned opaque metal material.

[0082] As another example, when the light-emitting display device 10 is a bottom-emission type, the anode 150 may include a transparent electrode layer and may not have a reflective layer.

[0083] As described above, in this embodiment, the anode 150 may be formed after the partition bank 160 is formed. The anode 150 fills the first opening OP1 of the partition bank 160, and its edge may be formed on the surface (e.g., side surface and upper surface) of the partition bank 160.

[0084] The flat portion of the anode 150 that contacts the upper surface of the outer coating 135 within the first opening OP1 may be referred to as a first portion AE1, and the portion of the anode 150 that is formed along the surface of the partition bank 160 and is located outside the first portion AE1 may be referred to as a second portion AE2.

[0085] On the substrate 101 on which the anode 150 is formed, a light-emitting layer 165 having an area much smaller than that of the anode 150 can be formed.

[0086] In this regard, the side ends (or side surfaces) of the light-emitting layer 165 can be located within the side ends of the anode 150. That is, the light-emitting layer 165 can be formed within the region where the anode 150 is formed.

[0087] Therefore, the light-emitting layer 165 can be formed so as not to cover the end AE2e (or the end AE2e of the second part AE2) of the anode 150 (or not to overlap with the end AE2e). That is, the end AE2e of the second part AE2 of the anode 150 located on the upper surface of the partition 160 can have a protruding shape extending to the outside of the light-emitting layer (165).

[0088] Therefore, the end AE2e of the anode 150 can be exposed without being covered by the light-emitting layer 165.

[0089] Therefore, in this embodiment, within the sub-pixel SP, the anode 150 can be formed on the partition 160, and the light-emitting layer 165 on the anode 150 can be formed with an area smaller than that of the anode 150, so that the end AE2e of the anode 150 can be exposed.

[0090] According to the above stacking and arrangement structure, the anode 150 is exposed around the light-emitting layer 165, so that foreign substances (such as gas or moisture) as deterioration factors can be released to the outside through the end AE2e in the exposed state. Therefore, the deterioration of the light-emitting layer 165 caused by gas or moisture can be effectively reduced (or delayed) or prevented.

[0091] In this regard, in a conventional light-emitting display device, the partition 160 covers the edge of the anode 150, and the light-emitting layer 165 is formed on the anode 150 and the partition 160. In this structure, gas or moisture is not released to the outside, but remains in the region where the anode 150, the partition 160, and the light-emitting layer 165 meet, which causes the light-emitting layer 165 to deteriorate inward.

[0092] On the other hand, according to this embodiment, the anode 150 is formed on the partition 160, and the light-emitting layer 165 is formed with an area smaller than that of the anode 150, so that the anode 150 can have a structure in which the end AE2e is exposed. Therefore, when a baking process or the like is performed, foreign substances as deterioration factors can be effectively released to the outside, thereby reducing or preventing the deterioration of the light-emitting layer 165. As a result, the shrinkage phenomenon of the light-emitting region EA caused by deterioration in the inward direction can be effectively improved.

[0093] Meanwhile, similar to the anode 150, a light-emitting layer 165 can be formed for each sub-pixel SP. That is, the light-emitting layer 165 of the sub-pixel SP can be formed substantially integrally within the sub-pixel SP and can be continuously formed within the sub-pixel SP while being in contact with the anode 150. The light-emitting layer 165 can be physically separated and spaced apart from the light-emitting layer 165 of an adjacent sub-pixel SP.

[0094] On the substrate 101 on which the light-emitting layer 165 is formed, a high-resistance protection pattern PP can be formed along the edge (or boundary) of each sub-pixel SP.

[0095] The high-resistance protection pattern PP can be formed to cover the edge of the light-emitting layer 165 and the anode 150.

[0096] For example, the high-resistance protection pattern PP can have a second opening OP2 therein that exposes the light-emitting layer 165. The second opening OP2 can be located within the first opening OP1 and can have a size (or area) equal to or less than the size (or area) of the first opening OP1. Preferably, the second opening OP2 of the high-resistance protection pattern PP can be formed to have a size smaller than the size of the first opening OP1 of the dam 150.

[0097] In this way, the light-emitting layer 165 can be exposed upward through the second opening OP2 of the high-resistance protection pattern PP and can be in contact with the cathode 169. Therefore, the second opening OP2 of the high-resistance protection pattern PP can define a light-emitting area EA where the actual light-emitting operation occurs.

[0098] The high-resistance protection pattern PP can have a substantially isolating property, for example, by having a high resistance of 10 12 ohms or greater. In this regard, the high-resistance protection pattern PP can be formed of an inorganic insulating material (such as silicon oxide or silicon nitride) or a transparent metal oxide containing a high concentration of oxygen (e.g., IZO, ITO, etc.) to achieve a high resistance of 10 12 ohms or greater.

[0099] The high-resistance protection pattern PP can be formed to cover a second portion AE2 that is an edge portion of the anode 150 and an edge portion of the light-emitting layer 165 located on the second portion AE2, so as to cover and protect an end portion AE2e of the anode 150 that is exposed outside the light-emitting layer 165.

[0100] Therefore, corresponding to the second opening OP2 of the high-resistance protection pattern PP, a first portion AE1 of the anode 150 having a substantially flat shape and a flat portion of the light-emitting layer 165 located on the first portion AE1 can be positioned.

[0101] Meanwhile, a high-resistance protection pattern PP can be formed for each sub-pixel SP, for example. In this regard, the high-resistance protection pattern PP can be formed in a shape surrounding the light-emitting region EA of the sub-pixel SP. In this case, the high-resistance protection pattern PP of each sub-pixel SP can be spaced apart from the high-resistance protection pattern PP of an adjacent sub-pixel SP by a certain distance, and the upper surface of the partition 160 can be exposed upward in the interval region between the high-resistance protection patterns PP.

[0102] The cathode (or second electrode) 169 can be formed on the substrate 101 on which the high-resistance protection pattern PP is formed. The cathode 169 can be integrally formed, for example, above the entire surface of the substrate 101. That is, the cathode 169 can be continuously formed along a plurality of sub-pixels SP. In this case, the cathode 169 can be formed along the light-emitting layer 169 above the second opening OP2 of the high-resistance protection pattern PP and the partition 160 between the high-resistance protection pattern PP and the adjacent high-resistance protection pattern PP.

[0103] As another example, a cathode 169 can be formed for each sub-pixel SP so as to be physically separated and spaced apart from the cathode 169 of an adjacent sub-pixel SP.

[0104] When the light-emitting display device 10 is a top-emission type, the cathode 169 can include a transparent electrode layer made of a transparent conductive material (e.g., ITO, IZO, IZTO, etc.). As another example, when the light-emitting display device 10 is a bottom-emission type, the cathode 169 can include a reflective layer formed of a metal.

[0105] The anode 150, the light-emitting layer 165, and the cathode 169 arranged in the second opening OP2 of each sub-pixel SP as described above can constitute a light-emitting diode OD.

[0106] The light-emitting diode OD emits light from the light-emitting layer 165 between the anode 150 and the cathode 169, and the emitted light can travel upward and be output.

[0107] The anode 150, the light-emitting layer 165, and the cathode 169 arranged in the second opening OP2 of each sub-pixel SP (i.e., arranged in the light-emitting region EA) have a substantially flat shape. Therefore, the light-emitting diode OD formed in the emission region EA has a substantially uniform (or constant) thickness, so that uniform brightness characteristics can be achieved regardless of the position.

[0108] In this regard, in the above-described conventional light-emitting display device, the light-emitting layer 165 is deposited with a relatively thin thickness on a part of the partition 165 covering the edge of the anode 150, so that the light-emitting brightness at this position is higher than that inside, resulting in a brightness deviation within the light-emitting region EA.

[0109] On the other hand, according to this embodiment, the light-emitting diode OD (or its light-emitting layer 165) has a substantially uniform (or constant) thickness in the light-emitting region EA defined in the second opening OP2, so that the luminance deviation within the light-emitting region EA can be improved, and the uniformity of luminance can be ensured.

[0110] In addition, as described above, the high-resistance protection pattern PP can cover and protect the edge of the anode 150. Therefore, the cathode 169 formed on the high-resistance protection pattern PP is structurally isolated from the anode 150, thereby preventing a short circuit between the anode 150 and the cathode 169.

[0111] In addition, since the high-resistance protection pattern PP covers the edge of the anode 150, the anode 150 is structurally isolated from the anodes 150 of adjacent sub-pixels SP. Thereby, the lateral leakage current between adjacent sub-pixels SP can be reduced or prevented.

[0112] Hereinafter, a method of manufacturing the light-emitting display device having the above structure according to this embodiment will be described in more detail.

[0113] Figures 4 to 23 is a view schematically showing a method of manufacturing a light-emitting display device according to an embodiment of the present disclosure, and shows the processes of forming the light-emitting layer 165, the high-resistance protection pattern PP, and the cathode 169. Meanwhile, in Figures 4 to 23 For ease of explanation, the layers stacked below the dam 160 and the anode 150 are omitted.

[0114] First, as Figure 4 shown, the first light-emitting material can be deposited above the entire surface of the substrate 101 on which the dam 160 and the anode 150 are formed (or at least above the entire surface of the display region of the substrate 101) to form the first light-emitting material layer EM1. The first light-emitting material is used to form, for example, an R light-emitting layer (or a first light-emitting layer) that serves as the light-emitting layer of the R sub-pixel SPr.

[0115] Next, a first protective layer SL1 and a first PR (photoresist) layer PR1 can be formed (or coated) on the first light-emitting material layer EM1. The first protective layer SL1 can be used as a layer for protecting the first light-emitting material layer EM1 in a subsequent etching process. The first protective layer SL1 can be formed of, for example, a polymer, and more preferably can be formed of a fluorine-based polymer having excellent moisture resistance, but is not limited thereto.

[0116] Next, as Figure 5As shown, an exposure and development process may be performed to form a first PR pattern PR1_P corresponding to the R sub-pixel SPr. For example, the first PR pattern PR1_P may correspond to the anode 150 of the R sub-pixel SPr and may be formed to have a smaller size (or area) than the anode 150 of the R sub-pixel SPr.

[0117] Next, as Figure 6 shown, an etching process (e.g., a dry etching process) may be performed to etch the first protective layer SL1 and the first light-emitting material layer EM1. Thus, an R light-emitting layer 165r having a size smaller than the anode 150 of the R sub-pixel SPr may be formed.

[0118] In addition, a first protective layer pattern SL1_P having substantially the same shape as the R light-emitting layer 165r may be formed on the R light-emitting layer 165r through an etching process.

[0119] During the etching process, the anode 150 and the partition 160 located below the R light-emitting layer 165r may be used as an etching stopper layer.

[0120] Meanwhile, during the etching process, the first PR pattern PR1_P may be etched and removed. As another example, a stripping process may be performed after the etching process to remove the first PR pattern PR1_P.

[0121] Next, as Figure 7 shown, a second light-emitting material may be deposited over the entire surface of the substrate 101 on which the R light-emitting layer 165r and the first protective layer pattern SL1_P are formed to form a second light-emitting material layer EM2. The second light-emitting material is used to form, for example, a G light-emitting layer (or a second light-emitting layer) that is the light-emitting layer of the G sub-pixel SPg.

[0122] The second light-emitting material layer EM2 may also be deposited on the first protective layer pattern SL1_P.

[0123] Next, as Figure 8 shown, a stripping process (or a peeling process) may be performed to remove the first protective layer pattern SL1_P. Thus, a part of the second light-emitting material layer EM2 deposited on the first protective layer pattern SL1_P may also be removed.

[0124] Next, as Figure 9 shown, a second protective layer SL2 and a second PR layer PR2 may be formed over the substrate 101 on which the second light-emitting material layer EM2 is formed. The second protective layer SL2 may be formed of the same material as the first protective layer SL1.

[0125] Next, as Figure 10As shown, an exposure and development process can be performed to form a second PR pattern PR2_P corresponding to each of the R sub-pixel SPr and the G sub-pixel SPg. The second PR pattern PR2_P can be formed, for example, to have substantially the same size as the first PR pattern PR1_P. That is, the second PR pattern PR2_P can correspond to the anode 150 of each of the R sub-pixel SPr and the G sub-pixel SPg, and can be formed to have a size (or area) smaller than the size (or area) of the anode 150 of each of the R sub-pixel SPr and the G sub-pixel SPg.

[0126] The second PR pattern PR2_P located on the R sub-pixel SPr can be formed to have a size substantially corresponding to the R light-emitting layer 165r thereunder.

[0127] Next, as Figure 11 shown, an etching process (e.g., a dry etching process) can be performed to etch the second protective layer SL2 and the second light-emitting material layer EM2. Accordingly, a G light-emitting layer 165g having a size smaller than the size of the anode 150 of the G sub-pixel SPg can be formed on the anode 150 of the G sub-pixel SPg.

[0128] In addition, a second protective layer pattern SL2_P having a shape substantially the same as that of the G light-emitting layer 165g can be formed on the G light-emitting layer 165g by an etching process. In addition, a second protective layer pattern SL2_P having a shape substantially the same as that of the R light-emitting layer 165r can be formed on the R light-emitting layer 165r, and the R light-emitting layer 165r can maintain its shape and be substantially unetched.

[0129] In the etching process, the anode 150 and the partition 160 located under the G light-emitting layer 165g and the R light-emitting layer 165r can be used as an etching stopper layer.

[0130] Meanwhile, during the etching process, the second PR pattern PR2_P can be etched and removed. As another example, a stripping process for removing the second PR pattern PR2_P after the etching process can be performed.

[0131] Next, as Figure 12 shown, a third light-emitting material can be deposited over the entire surface of the substrate 101 on which the G light-emitting layer 165g, the R light-emitting layer 165r, and the second protective layer pattern SL2_P are formed to form a third light-emitting material layer EM3. The third light-emitting material is, for example, used to form a B light-emitting layer (or a third light-emitting layer) that serves as the light-emitting layer of the B sub-pixel SPb.

[0132] The third light-emitting material layer EM3 can also be deposited on the second protective layer pattern SL2_P.

[0133] Next, as Figure 13As shown, the second protective layer pattern SL2_P can be removed by performing a stripping process (or an etching-away process). Accordingly, the third light-emitting material layer EM3 deposited on the second protective layer pattern SL2_P can also be removed.

[0134] Next, as Figure 14 shown, a third protective layer SL3 and a third PR layer PR3 can be formed over the substrate 101 on which the third light-emitting material layer EM3 is formed. The third protective layer SL3 can be formed of the same material as the first protective layer SL1 and the second protective layer SL2.

[0135] Next, as Figure 15 shown, by performing an exposure and development process, third PR patterns PR3_P corresponding to each of the R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb can be formed. For example, the third PR patterns PR3_P can be formed to have substantially the same size as the first PR patterns PR1_P and the second PR patterns PR2_P. That is, the third PR patterns PR3_P can correspond to the anodes 150 of each of the R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb, and can be formed to have a size (or area) smaller than the size (or area) of the anodes 150 of each of the R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb.

[0136] The third PR patterns PR3_P located on each of the R sub-pixel SPr and the G sub-pixel SPg can be formed to have sizes substantially corresponding to each of the R light-emitting layer 165r and the G light-emitting layer 165g.

[0137] Next, as Figure 16 shown, an etching process (e.g., a dry etching process) can be performed to etch the third protective layer SL3 and the third light-emitting material layer EM3. Accordingly, a B light-emitting layer 165b having a size smaller than the anode 150 of the B sub-pixel SPb can be formed on the anode 150 of the B sub-pixel SPb.

[0138] In addition, a third protective layer pattern SL3_P having a shape substantially the same as that of the B light-emitting layer 165b can be formed on the B light-emitting layer 165b by an etching process. In addition, third protective layer patterns SL3_P having shapes substantially the same as those of each of the R light-emitting layer 165r and the G light-emitting layer 165g can be formed on each of the R light-emitting layer 165r and the G light-emitting layer 165g, and the R light-emitting layer 165r and the G light-emitting layer 165g can not be substantially etched and can maintain their shapes.

[0139] In the etching process, the anodes 150 and the dams 160 located under the B light-emitting layer 165b, the G light-emitting layer 165g, and the R light-emitting layer 165r can be used as etching stop layers.

[0140] Meanwhile, during the etching process, the third PR pattern PR3_P can be etched and removed. As another example, a stripping process can be performed after the etching process to remove the third PR pattern PR3_P.

[0141] Next, as Figure 17 shown, a stripping process can be performed to remove the third protective layer pattern SL3_P.

[0142] Through the above processes, the R light-emitting layer 165r, G light-emitting layer 165g, and B light-emitting layer 165b, each having a size smaller than that of the anode 150, can be respectively formed on the anode 150 in the R sub-pixel SPr, G sub-pixel SPg, and B sub-pixel SPb.

[0143] Next, as Figure 18 shown, a fourth protective layer SL4 and a fourth PR layer PR4 can be formed above the substrate 101 on which the R light-emitting layer 165r, G light-emitting layer 165g, and B light-emitting layer 165b are formed. The fourth protective layer SL4 can be formed of the same material as the first protective layer SL1 to the third protective layer SL3.

[0144] Next, as Figure 19 shown, by performing an exposure and development process, a fourth PR pattern (or fourth and first PR patterns) PR4_P1 corresponding to each of the R sub-pixel SPr, G sub-pixel SPg, and B sub-pixel SPb (more specifically, each of the R light-emitting layer 165r, G light-emitting layer 165g, and B light-emitting layer 165b) can be formed. Additionally, a fifth PR pattern (or fourth and second PR patterns) PR4_P2 corresponding to the boundaries between the R sub-pixel SPr, G sub-pixel SPg, and B sub-pixel SPb can be formed.

[0145] In this case, the fifth PR pattern PR4_P2 can be formed at a certain distance from the adjacent fourth PR pattern PR4_P1.

[0146] Next, as Figure 20 shown, an etching process (e.g., a dry or wet etching process) can be performed to etch the fourth protective layer s14. In this regard, an over-etching can be performed on the fourth protective layer SL4 such that the fourth protective layer SL4 can be etched further inward than the fourth PR pattern PR4_P1 and the fifth PR pattern PR4_P2.

[0147] Therefore, the fourth protective layer pattern SL4_P1 and the fifth protective layer pattern (or fourth and first protective layer patterns and fourth and second protective layer patterns) SL4_P2 can be respectively formed below the fourth PR pattern PR4_P1 and the fifth PR pattern PR4_P2 that are further recessed inward.

[0148] In this way, the fourth protective layer pattern SL4_P1 and the fifth protective layer pattern SL4_P2 are formed to have a smaller area than the fourth PR pattern PR4_P1 and the fifth PR pattern PR4_P2 by being recessed inward respectively, such that the fourth PR pattern PR4_P1 and the fourth protective layer pattern SL4_P1 have an undercut structure, and the fifth PR pattern PR4_P2 and the fifth protective layer pattern SL4_P2 have an undercut structure.

[0149] Next, as Figure 21 shown, a high-resistance protective material can be deposited above the substrate 101 on which the fourth protective layer pattern SL4_P1 and the fifth protective layer pattern SL4_P2 are formed to form a protective material layer PM. The protective material is used to form high-resistance protective patterns PP located at the edges of each sub-pixel SP.

[0150] The protective material layer PM can be deposited on the fourth PR pattern PR4_P1 and the fifth PR pattern PR4_P2. Additionally, the protective material layer PM can be formed on the anode 150 and the R light-emitting layer 165r, G light-emitting layer 165g, and B light-emitting layer 165b located at the edges of each sub-pixel SP, and the edge is the spaced area between the fourth protective layer pattern SL4_P1 and the fifth protective layer pattern SL4_P2.

[0151] Next, as Figure 22 shown, the fourth protective layer pattern SL4_P1 and the fifth protective layer pattern SL4_P2 can be removed by performing a lift-off process (or stripping process). Therefore, the fourth PR pattern PR4_P1 and the fifth PR pattern PR4_P2 formed on the fourth protective layer pattern SL4_P1 and the fifth protective layer pattern SL4_P2 and the protective material layer PM thereon can also be removed together.

[0152] Through the lift-off process, the protective material layer PM formed along the edges of each sub-pixel SP can remain on the substrate 101 in a pattern shape to form the high-resistance protective patterns PP.

[0153] Through the above processes, high-resistance protective patterns PP can be formed to cover the edges of the anode 150 and the R light-emitting layer 165r, G light-emitting layer 165g, or B light-emitting layer 165b of each sub-pixel SP.

[0154] Next, as Figure 23 shown, a cathode material can be deposited above the substrate 101 on which the high-resistance protective patterns PP are formed to form a cathode 169.

[0155] By performing the above processes, a light-emitting diode OD according to this embodiment can be formed.

[0156] As described above, according to an embodiment of the present disclosure, in a sub-pixel, an anode is formed on a partition wall, and a light-emitting layer on the anode is formed with an area smaller than that of the anode, such that an end portion of the anode is not covered by the light-emitting layer.

[0157] Therefore, foreign substances as a degradation factor can be discharged to the outside, such that degradation of the light-emitting layer can be reduced or prevented. As a result, a contraction phenomenon of a light-emitting region caused by degradation developing in an inward direction can be effectively improved.

[0158] In addition, edges of the anode and the light-emitting layer can be covered by a high-resistance protection pattern.

[0159] Therefore, since the light-emitting diode has a substantially uniform thickness in a light-emitting region defined in an opening inside the high-resistance protection pattern, luminance deviation within the light-emitting region can be improved, such that luminance uniformity can be ensured.

[0160] In addition, since the cathode is structurally isolated from the anode by the high-resistance protection pattern, a short circuit between the anode and the cathode can be prevented.

[0161] Furthermore, since the anode is structurally isolated from anodes of adjacent sub-pixels by the high-resistance protection pattern, lateral leakage current between adjacent sub-pixels can be reduced or prevented.

[0162] It will be apparent to those skilled in the art that various modifications and variations can be made in the present disclosure without departing from the spirit or scope of the present disclosure. Therefore, the present disclosure is intended to cover modifications and variations of the present disclosure that fall within the scope of the appended claims and their equivalents.

Claims

1. A light-emitting display device, comprising: a substrate, the substrate comprising a plurality of sub-pixels; A bank, the bank is formed along a boundary of a sub-pixel in the plurality of sub-pixels, the bank comprising a first opening; a first electrode, the first electrode being in the first opening and on the partition bank; a light-emitting layer, the light-emitting layer being on the first electrode and disposed inside the first electrode; a protection pattern having isolation properties, covering the first electrode and edges of the light-emitting layer, and comprising a second opening corresponding to the first opening; as well as A second electrode is provided in the second opening and on the protection pattern.

2. The light-emitting display device according to claim 1, wherein: An end portion of the edge of the first electrode has a shape that protrudes outward from the light emitting layer and is covered by the protection pattern.

3. The light-emitting display device according to claim 1, wherein: The second opening has a smaller area than the first opening.

4. The light-emitting display device according to claim 1, wherein: The first electrode, the light emitting layer, and the second electrode located in the second opening have uniform thicknesses.

5. The light-emitting display device according to claim 1, wherein: The protection pattern disposed at the edge of the sub-pixel is spaced apart from the protection pattern of an adjacent sub-pixel among the plurality of sub-pixels.

6. The light-emitting display device according to claim 1, wherein: The protection pattern has 10 12 Ohms or greater resistance.

7. The light-emitting display device according to claim 6, wherein: The protection pattern includes an inorganic insulating material or a transparent metal oxide.

8. A method for manufacturing a light-emitting display device, comprising: forming a bank on a substrate including a plurality of sub-pixels, the bank being arranged along a boundary of a sub-pixel among the plurality of sub-pixels and including a first opening; forming a first electrode in the first opening and on the bank; forming a light-emitting layer on and inside the first electrode; forming a protective pattern having isolation, the protective pattern covering the first electrode and edges of the light-emitting layer and including a second opening corresponding to the first opening; as well as A second electrode is formed in the second opening and on the protection pattern.

9. The method according to claim 8, wherein: Forming the protection pattern comprises: forming a protective layer and a photoresist layer over the substrate on which the light emitting layer is formed; exposing and developing the photoresist layer to form a first photoresist pattern corresponding to the light emitting layer and a second photoresist pattern corresponding to a boundary between the sub-pixel and an adjacent sub-pixel among the plurality of sub-pixels; performing an etching process on the protection layer to form a first protection layer pattern with an undercut shape under the first photoresist pattern, and to form a second protection layer pattern with an undercut shape under the second photoresist pattern; forming a protective material layer over the substrate having the first protective layer pattern and the second protective layer pattern formed thereon; and The first protection layer pattern and the second protection layer pattern are peeled off to form the protection pattern as a protection material layer remaining on the substrate.

10. The method according to claim 8, wherein: An end portion of the edge of the first electrode has a shape that protrudes outward from the light emitting layer and is covered by the protection pattern.

11. The method according to claim 8, wherein: The second opening has a smaller area than the first opening.

12. The method according to claim 8, wherein: The first electrode, the light emitting layer, and the second electrode located in the second opening have uniform thicknesses.

13. The method according to claim 8, wherein: The protection pattern disposed at the edge of the sub-pixel is spaced apart from the protection pattern of an adjacent sub-pixel among the plurality of sub-pixels.

14. The method according to claim 8, wherein: The protection pattern has 10 12 Ohms or greater resistance.

15. The method according to claim 14, wherein: The protection pattern includes an inorganic insulating material or a transparent metal oxide.

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