Light-emitting display device

Abstract

A light emitting display device includes: a substrate including a display area having a plurality of sub-pixels and a connection area between adjacent sub-pixels; a first electrode on the first separation region and the second separation region of the sub-pixel; a dam formed along the boundary of the sub-pixel, the dam including a first opening exposing the first electrode and a second opening corresponding to the connection region; a light emitting layer on the first electrode and on the first separation region and the second separation region; a protective pattern on the bank around the connection region, the protective pattern having an upper surface in an irregular uneven shape; and a second electrode on the light emitting layer, the second electrode including a first electrode pattern and a second electrode pattern in the first separation region and the second separation region, respectively, each of the first electrode pattern and the second electrode pattern extends to the connection region while covering the protection pattern, and is connected to a power line in the connection region.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0194005, filed in Korea on December 28, 2023, the entire content of which is incorporated herein by reference for all purposes as if fully set forth herein. Technical field

[0003] The present invention relates to a light - emitting display device. Background art

[0004] Recently, flat - panel display devices having excellent characteristics such as thinness, lightness, and low power consumption have been widely developed and applied in various fields.

[0005] In a flat - panel display device, a light - emitting display device including a light - emitting element such as a light - emitting diode is a display device in which charges are injected into a light - emitting layer formed between an anode and a cathode to form electron - hole pairs, and then the electron - hole pairs disappear to emit light.

[0006] When forming a light - emitting element, if a foreign substance is introduced and present on the anode, the anode and the cathode are short - circuited around the foreign substance, resulting in a problem that the sub - pixel becomes dark. Summary of the invention

[0007] One advantage of the present invention is to provide a light - emitting display device that can improve the darkening defect of sub - pixels caused by a short - circuit between an anode and a cathode.

[0008] Additional features and advantages of the present invention will be set forth in the following description, and in part will be apparent from the description, or may be learned by practice of the present invention. These and other advantages of the present invention will be realized and obtained by the structures particularly pointed out in the written description and its claims, as well as the appended drawings.

[0009] To achieve these and other advantages and in accordance with the purpose of the present invention, as specifically implemented and broadly described herein, a light-emitting display device includes: a substrate including a display area in which a plurality of sub-pixels are arranged and a connection area arranged between adjacent sub-pixels; a first electrode formed on a first separation area and a second separation area of the sub-pixels; a partition wall formed along the boundary of the sub-pixels, the partition wall including a first opening exposing the first electrode and a second opening corresponding to the connection area; a light-emitting layer formed on the first electrode and on the first separation area and the second separation area; a protection pattern on the partition wall around the connection area, the protection pattern having an upper surface with an irregular uneven shape; and a second electrode on the light-emitting layer, the second electrode including a first electrode pattern and a second electrode pattern respectively formed in the first separation area and the second separation area, wherein each of the first electrode pattern and the second electrode pattern extends into the connection area while covering the protection pattern and is connected to a power supply line in the connection area.

[0010] In another aspect, a light-emitting display device includes: a substrate including a display area having a plurality of sub-pixels and a connection area between adjacent sub-pixels; a first electrode and a light-emitting layer formed in the sub-pixels; a protection pattern located at the boundary between each of a first separation area and a second separation area of the sub-pixels and the connection area, the protection pattern having an upper surface with an uneven shape; and a second electrode on the light-emitting layer, the second electrode including a first electrode pattern and a second electrode pattern respectively formed in the first separation area and the second separation area, wherein each of the first electrode pattern and the second electrode pattern extends into the connection area while covering the protection pattern and is connected to a power supply line in the connection area.

[0011] It should be understood that the foregoing summary and the following detailed description are both exemplary and explanatory and are intended to provide further explanation of the claimed invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure. In the drawings:

[0013] Figure 1 is a plan view schematically showing a light-emitting display device according to a first embodiment of the present invention;

[0014] Figure 2 is a cross-sectional view taken along line II-II' of Figure 1 ;

[0015] Figure 3 is a cross-sectional view taken along line III-III' Figure 1 ;

[0016] Figure 4 is a circuit diagram schematically showing a circuit configuration of sub-pixels according to a first embodiment of the present invention;

[0017] Figures 5 to 9 is a plan view schematically showing a method of manufacturing a light-emitting display device according to a first embodiment of the present invention;

[0018] Figures 10 to 12 are a plan view, a cross-sectional view, and a circuit diagram respectively showing a case where foreign substances are present in sub-pixels of a light-emitting display device according to a first embodiment of the present invention;

[0019] Figures 13 to 15 are a plan view, a cross-sectional view, and a circuit diagram respectively showing a case where a first repair process is performed on sub-pixels of a light-emitting display device according to a first embodiment of the present invention to remove foreign substances and solve a short circuit between an anode and a cathode;

[0020] Figure 16 and Figure 17 are a plan view and a circuit diagram respectively showing a case where foreign substances are retained in sub-pixels of a light-emitting display device according to a first embodiment of the present invention;

[0021] Figure 18 and Figure 19 are a plan view and a circuit diagram respectively showing a case where a second repair process is performed on sub-pixels of a light-emitting display device according to a first embodiment of the present invention to disconnect a cathode pattern;

[0022] Figure 20 is a plan view schematically showing a light-emitting display device according to a second embodiment of the present invention;

[0023] Figure 21 is a circuit diagram schematically showing a circuit configuration of sub-pixels according to a second embodiment of the present invention. DETAILED DESCRIPTION

[0024] Advantages and features of the present invention and methods for realizing them will be apparent with reference to embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and these embodiments are only used to make the present invention complete. The present invention is provided to fully inform those skilled in the art of the scope of the present disclosure, and the present invention can be defined by the scope of the claims.

[0025] The shapes, dimensions, ratios, angles, quantities, etc. of the embodiments for explaining the present invention disclosed in the drawings are illustrative, and the present invention is not limited to what is shown. Throughout the specification, the same reference numerals denote the same components.

[0026] In addition, when describing the present invention, if it is determined that the detailed description of the relevant known technology unnecessarily makes the subject matter of the present invention difficult to understand, the detailed description thereof may be omitted. When using "comprising", "including", "having", "consisting of", etc. in the present invention, other parts may be added unless "only" is used. When a component is represented in the singular, it includes the case of plural unless specifically stated.

[0027] When explaining a component, even if there is no separate and explicit description, the component is interpreted as including a margin range.

[0028] In the case of describing a positional relationship, for example, when the positional relationship between two parts is described as "above", "over", "below", "next to", "beneath", etc., unless "immediately" or "directly" is used, one or more other parts may be positioned between the two parts.

[0029] In the case of describing a time relationship, for example, when the time precedence is described as "after", "subsequently", "before", etc., unless "directly" or "immediately" is used, discontinuous cases may be included.

[0030] When describing the components of the present invention, terms such as first, second, etc. may be used. These terms are only used to distinguish the components from other components, and the nature, order, sequence, or quantity of the components are not limited by these terms.

[0031] The respective features of the various embodiments of the present invention may be partially or entirely connected or combined with each other, may be interlocked and driven in various technical ways, and the respective embodiments may be implemented independently of each other, or may be implemented together in a related relationship.

[0032] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. At the same time, in the following embodiments, the same and similar reference numerals are assigned to the same and similar components, and the detailed description thereof may be omitted.

[0033] <First Embodiment>

[0034] Figure 1 is a plan view schematically showing a light-emitting display device according to a first embodiment of the present invention.

[0035] Figure 2 is a cross-sectional view taken along Figure 1 the line II-II', Figure 3 is along Figure 1A sectional view taken along line III-III'. Figure 4 FIG. Figure 4 is a circuit diagram schematically showing a circuit configuration of sub-pixels according to a first embodiment of the present invention.

[0036] Before the detailed description, the light-emitting display device 10 according to an embodiment of the present invention may include one of all types of display devices that use a light-emitting diode OD as a self-luminous element to display an image.

[0037] In the present embodiment, for ease of explanation, an organic light-emitting display device is taken as an example of the light-emitting display device 10.

[0038] In addition, the light-emitting display device 10 may be a top-emission type or a bottom-emission type display device. In the present embodiment, for ease of explanation, the top-emission type light-emitting display device 10 is taken as an example.

[0039] Reference Figures 1 to 4 FIG. Figures 1 to 4 , in the light-emitting display device 10 (or its light-emitting display panel) of the present embodiment, a display area AA for displaying an image and a non-display area NA arranged around the display area AA may be defined.

[0040] The display area AA may include a plurality of sub-pixels SP arranged on a substrate 101 along a plurality of row lines (or horizontal lines) and a plurality of column lines (or vertical lines). Meanwhile, referring to Figure 4 FIG. Figure 4 , a plurality of gate lines (or scan lines) GL extending in a row direction (or horizontal direction or first direction) and a plurality of data lines DL extending in a column direction (or vertical direction or second direction) may be formed on the substrate 101. Each sub-pixel SP may be connected to a corresponding gate line GL and data line DL.

[0041] In addition, a power line VL for transmitting a low-potential driving voltage (or second driving voltage) Vss may be formed on the substrate 101. The power line VL may extend in a row direction or a column direction. In the present embodiment, as shown in Figure 3 FIG. Figure 3 and Figure 4 FIG. Figure 4 , the case where the power line VL extends in a row direction is taken as an example. Meanwhile, a power line for transmitting a high-potential driving voltage (or first driving voltage) Vdd may be formed on the substrate 101.

[0042] The power line VL may be arranged, for example, for each row line. In this case, within the display area AA, the power line VL of each row line may be connected to the sub-pixels SP arranged on each row line.

[0043] Multiple sub-pixels SP may include sub-pixels SP of different colors that constitute pixel P, and pixel P is a unit for displaying a color image. In this regard, for example, the multiple sub-pixels SP that constitute pixel P may include W, R, G, and B sub-pixels (or first sub-pixel, second sub-pixel, third sub-pixel, and fourth sub-pixel) SPw, SPr, SPg, and SPb that respectively display a first color, a second color, a third color, and a fourth color (e.g., white (W), red (R), green (G), and blue (B)). As another example, the multiple sub-pixels SP that constitute pixel P may be composed of R, G, and B sub-pixels SPr, SPg, and SPb.

[0044] In the present embodiment, take the case where pixel P is composed of a W sub-pixel SPw, an R sub-pixel SPr, a G sub-pixel SPg, and a B sub-pixel SPb as an example. In this case, the light-emitting display device 10 may have high brightness characteristics due to including the W sub-pixel SPw.

[0045] The W sub-pixel SPw, the R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb may be arranged in various forms. For example, as Figure 1 shown, the W sub-pixel SPw, the R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb may be arranged in a 2-row and 2-column quadrilateral type. As another example, the W sub-pixel SPw, the R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb may be arranged in a strip type.

[0046] In the present embodiment, regarding the quadrilateral type arrangement, for the sake of easy explanation, take the case where the W sub-pixel SPw and the B sub-pixel SPb are arranged adjacent to each other in the first row which is one of the two rows, and the R sub-pixel SPr and the G sub-pixel SPg are arranged in the second row which is the other of the two rows as an example. The W sub-pixel SPw, the R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb may be arranged in different arrangement forms.

[0047] In this case, the W sub-pixel SPw and the B sub-pixel SPb arranged in the first row may be connected to the power supply line VL arranged in the first row to receive the low-potential driving voltage Vss, and the R sub-pixel SPr and the G sub-pixel SPg arranged in the second row may be connected to the power supply line VL arranged in the second row to receive the low-potential driving voltage Vss.

[0048] As another example, when the power supply line VL extends in the column direction, the power supply line VL may be commonly connected to the W sub-pixel SPw, the R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb. In this regard, the power supply line VL extending in the column direction may extend along the boundary between two adjacent column lines and be commonly connected to the sub-pixels SP arranged in two adjacent column lines.

[0049] Meanwhile, in the light-emitting display device 10 of the present embodiment, a cathode 169 may be formed for each sub-pixel SP. In this case, the sub-pixel SP may be divided (or separated) into a plurality of regions DA1 and DA2, the cathode 169 in the sub-pixel SP may be composed of a plurality of cathode patterns (or electrode patterns) CP1 and CP2 divided into the plurality of divided regions DA1 and DA2, and the cathode patterns CP1 and CP2 arranged in the divided regions DA1 and DA2 may be connected to the power line VL through corresponding connection contact holes CHc1 and CHc2 provided in the connection region CA.

[0050] Therefore, the light emitting diode OD of each sub-pixel SP may be composed of a plurality of sub-light emitting diodes OD1 and OD2 having a plurality of cathode patterns CP1 and CP2 , respectively.

[0051] In this embodiment, for the sake of convenience of explanation, the case is taken as an example in which the sub-pixel SP includes two separation areas DA1 and DA2, namely, the first separation area DA1 and the second separation area DA2, the cathode 169 is composed of two cathode patterns CP1 and CP2, namely, the first cathode pattern CP1 and the second cathode pattern CP2 (or the first electrode pattern and the second electrode pattern), and the first connection contact hole CHc1 and the second connection contact hole CHc2 corresponding to the first cathode pattern CP1 and the second cathode pattern CP2 are formed respectively.

[0052] In this way, the cathode 169 of the sub-pixel SP is configured with a partition structure. Therefore, when a dimming defect is caused by foreign matter or the like, if a repair process (or a first repair process) of removing the short circuit between the anode 150 and the cathode 169 of the portion where the foreign matter is located is unsuccessful, an additional repair process (or a second repair process) of separating and disconnecting the cathode pattern of the partition region where the foreign matter exists can be performed.

[0053] Therefore, in the sub-pixel SP, only the partition area where the foreign matter is located darkens, and the remaining partition areas can emit light normally, thereby improving the darkening defect of the entire sub-pixel SP and allowing the sub-pixel SP to actually perform a normal light emission function.

[0054] The structure of improving the dimming defect using the partition structure of the cathode 169 of the present embodiment is described in more detail below.

[0055] Figure 2 and Figure 3 is a view schematically showing a cross-sectional structure of a light emitting display device according to the present embodiment. Figure 2 An example of a cross-sectional structure of a first separation area DA1 and its adjacent connection area CA of a W sub-pixel SPw is shown, Figure 3An example of a cross-sectional structure of a separation region between a first separation region DA1 and a second separation region DA2 of a W sub-pixel SPw is shown. For ease of explanation, Figure 2 A thin film transistor T connected to a light emitting diode OD in the W sub-pixel SPw is shown. At the same time, Figure 2 and Figure 3 The cross-sectional structures of can be applied to other sub-pixels SPr, SPb, and SPg in the same or similar manner.

[0056] In addition, Figure 4 is a diagram schematically showing a circuit configuration constituting the W sub-pixel SPw according to the present embodiment. This circuit configuration can be applied to other sub-pixels SPr, SPb, and SPg in the same or similar manner.

[0057] Referring to Figures 2 to 4 and Figure 1 , in each sub-pixel SP, a sub-pixel driving circuit SDC including a thin film transistor T and a light emitting diode OD can be formed on a substrate 101. At the same time, in the sub-pixel driving circuit SDC of each sub-pixel SP, a plurality of thin film transistors including the thin film transistor T can be formed, and at least one capacitor can be formed.

[0058] More specifically, a semiconductor layer 112 can be formed on the substrate 101. The semiconductor layer 112 can be formed of amorphous silicon, polycrystalline silicon, or an oxide semiconductor material, but is not limited thereto.

[0059] The semiconductor layer 112 can include a central channel region and source and drain regions on both sides.

[0060] At the same time, a buffer layer 105 can be formed above the substrate 101 and below the semiconductor layer 112.

[0061] A gate insulating layer 115 on the semiconductor layer 112 can be formed as an insulating layer made of an insulating material. The gate insulating layer 115 can be formed of an inorganic insulating material such as silicon oxide or silicon nitride, but is not limited thereto.

[0062] A gate electrode 120 formed of a conductive material such as metal can be formed on the gate insulating layer 115 corresponding to the channel region of the semiconductor layer 112.

[0063] In addition, a gate line GL connected to the gate electrode of the switching thin film transistor can be formed on the gate insulating layer 115.

[0064] Furthermore, a power supply line VL formed of the same material as the gate electrode 120 and the gate line GL can be formed on the gate insulating layer 115.

[0065] The interlayer insulating layer 125 on the gate electrode 120 and the power supply line VL can be formed as an insulating layer made of an insulating material.

[0066] The interlayer insulating layer 125 can be formed of an inorganic insulating material such as silicon oxide or silicon nitride, or an organic insulating material such as benzocyclobutene or photoacrylic acid, but is not limited thereto.

[0067] The interlayer insulating layer 125 and the gate insulating layer 115 thereunder can include a first semiconductor contact hole CHs1 and a second semiconductor contact hole CHs2 that respectively expose the source region and the drain region of the semiconductor layer 112.

[0068] The first semiconductor contact hole CHs1 and the second semiconductor contact hole CHs2 can be located on both sides of the gate electrode 120 and spaced apart from the gate electrode 120.

[0069] In addition, the interlayer insulating layer 125 can include a first connection contact hole CHc1 and a second connection contact hole CHc2 that expose the power supply line VL.

[0070] The first connection contact hole CHc1 and the second connection contact hole CHc2 can be formed, for example, in a connection region CA formed between adjacent sub-pixels SP. In this regard, referring to Figure 1 , the connection region CA can be formed between the W sub-pixel SPw and the B sub-pixel SPb and between the R sub-pixel SPr and the G sub-pixel SPg. Thus, the connection region CA can be formed in a form surrounded by the sub-pixels SP on both sides. In the connection region CA, the first connection contact hole CHc1 and the second connection contact hole CHc2 for connecting the first cathode pattern CP1 and the second cathode pattern CP2 of the cathodes 169 in the respective sub-pixels SP on both sides can be arranged.

[0071] The source electrode 131 and the drain electrode 133 formed of a conductive material such as metal can be formed on the interlayer insulating layer 125.

[0072] In addition, on the interlayer insulating layer 125, a data line DL that intersects the gate line GL and is connected to the source electrode of the switching thin film transistor can be formed.

[0073] Meanwhile, in some cases, the power supply line VL can be formed of the same material as the source electrode 131, the drain electrode 133, and the data line DL in the same process.

[0074] The source electrode 131 and the drain electrode 133 can be positioned to be spaced apart from the gate electrode 120 and respectively contact the source region and the drain region of the semiconductor layer 112 through the first semiconductor contact hole CHs1 and the second semiconductor contact hole CHs2.

[0075] The semiconductor layer 112, gate electrode 120, source electrode 131, and drain electrode 133 configured as described above may form a thin film transistor T.

[0076] As another example, the thin film transistor T may have an inverted staggered structure in which the gate electrode 120 is located below the semiconductor layer 112, and the source electrode 131 and drain electrode 133 are located above the semiconductor layer 112.

[0077] The passivation layer 135 on the source electrode 131, drain electrode 133, and data line DL may be formed as an insulating layer made of an insulating material.

[0078] The formed passivation layer 135 may include at least one of an inorganic insulating material (such as silicon oxide or silicon nitride) and an organic insulating material (such as benzocyclobutene or photoacrylic), but is not limited thereto. The passivation layer 135 may be formed as a single-layer structure or a multi-layer structure.

[0079] The drain contact hole CHd exposing the drain electrode 133 may be formed in the passivation layer 135.

[0080] In addition, the passivation layer 135 may include an exposure hole Hex exposing the connection area CA (more specifically, the first connection contact hole CHc1 and the second connection contact hole CHc2 exposing the connection area CA). Accordingly, the first connection contact hole CHc1 and the second connection contact hole CHc2 of the power line VL exposing the connection area CA may be upwardly exposed through the exposure hole Hex.

[0081] On the passivation layer 135, an anode (or first electrode) 150 may be formed for each sub-pixel SP. That is, the anode 150 of the sub-pixel SP may be substantially integrally formed within the sub-pixel SP, and may be completely formed in a continuous form on the first separation region DA1 and the second separation region DA2 of the sub-pixel SP and on the separation region between the first separation region DA1 and the second separation region DA2. The anode 150 may be physically separated and spaced apart from the anode 150 of an adjacent sub-pixel SP.

[0082] The anode 150 may contact the drain electrode 133 through the drain contact hole CHd.

[0083] When the light-emitting display device 10 is a top-emitting type, the anode 150 may have high reflectivity by including an opaque metal material. For example, the anode 150 may include one of silver Ag, aluminum Al, molybdenum Mo, titanium Ti, and an APC (Al-Pd-Cu) alloy, but is not limited thereto.

[0084] Meanwhile, the anode 150 can be formed as a multilayer structure. In this regard, for example, the anode 150 can be formed as a multilayer structure in which a transparent conductive material (e.g., ITO, IZO, IZTO, etc.) is laminated above and / or below the above-mentioned opaque metal material.

[0085] As another example, when the light-emitting display device 10 is a bottom-emitting type, the anode 150 can include a transparent electrode layer and may not have a reflective layer.

[0086] The bank 160 can be formed on the anode 150 along the boundary of each sub-pixel SP (or the boundary between adjacent sub-pixels SP).

[0087] The bank 160 can be formed to cover the edge of the anode 150 disposed in each sub-pixel SP.

[0088] The bank 160 can be formed of at least one of, for example, an acrylic resin, an epoxy resin, a phenolic resin, a polyamide-based resin, a polyimide-based resin, an unsaturated polyester-based resin, a polyphenyl-based resin, a polyphenylene sulfide-based resin, benzocyclobutene, and a photoresist, but is not limited thereto.

[0089] The bank 160 can have a first opening OP1 that exposes the anode 150 of each sub-pixel SP. Since light can be emitted from each sub-pixel SP through the first opening OP1, the first opening OP1 can substantially define the light-emitting area of each sub-pixel SP.

[0090] The first opening OP1 of the bank 160 can be formed individually and continuously within each sub-pixel SP. The first opening OP1 can be formed continuously along the first separation region DA1 and the second separation region DA2 and the separation region between the first separation region DA1 and the second separation region DA2.

[0091] Meanwhile, the bank 160 can have a second opening OP2 corresponding to the connection region CA. That is, the second opening OP2 of the bank 160 can be formed on the exposed hole Hex of the connection region CA. Through the second opening OP2 and the exposed hole Hex, the first connection contact hole CHc1 and the second connection contact hole CHc2 disposed in the connection region CA can be exposed.

[0092] The light-emitting layer 165 may be formed along the upper surface of the anode 150 of each sub-pixel SP and the side and upper surfaces of the partition 160. Similar to the anode 150, the light-emitting layer 165 may be formed for each sub-pixel SP. That is, the light-emitting layer 165 of the sub-pixel SP may be formed substantially integrally within the sub-pixel SP and may be formed entirely in a continuous form on the first partition region DA1 and the second partition region DA2 of the sub-pixel SP and on the separation region between the first partition region DA1 and the second partition region DA2. The light-emitting layer 165 may be physically separated and spaced apart from the light-emitting layer 165 of an adjacent sub-pixel SP.

[0093] In each sub-pixel SP, the light-emitting layer 165 may be in contact with the anode 150 exposed through the first opening OP1 of the partition 160.

[0094] Meanwhile, a protection pattern PP having a rough surface (or a rough upper surface) may be formed on the partition 160 along the boundary of the connection region CA (or the boundary between the connection region CA and the sub-pixel SP). The protection pattern PP may be formed of, for example, a polymer, and more preferably may be formed of a fluorine-based polymer. The fluorine-based polymer has excellent moisture resistance, and thus can effectively prevent or at least reduce moisture from penetrating into the light-emitting layer 165.

[0095] The protection pattern PP may be formed with a rough upper surface and have a substantially irregular surface. The protection pattern PP may be constituted of, for example, a plurality of polymer nanowires PNW.

[0096] Each of the polymer nanowires PNW constituting the protection pattern PP may have a wire shape of a nanoscale, and the polymer nanowires PNW may be irregularly arranged. Thus, the protection pattern PP constituted of an aggregate of the polymer nanowires PNW may have an irregular and uneven surface shape.

[0097] Regarding the formation of the protection pattern PP, for example, by repeatedly performing a plasma treatment after coating a fluorine-based polymer, a plurality of polymer nanowires PNW arranged irregularly may be formed. Thus, the protection pattern PP having a surface constituted of an aggregate of the polymer nanowires PNW and having an irregular and uneven shape may be realized.

[0098] The protection pattern PP may be formed along the perimeter of the connection region CA and is provided to surround the connection contact holes CHc1 and CHc2 arranged in the connection region CA. For example, as Figure 1As shown, the protection pattern PP disposed between adjacent W sub-pixels SPw and B sub-pixels SPb may be formed to surround the first connection contact hole CHc1 and the second connection contact hole CHc2 corresponding to (or adjacent to) the W sub-pixel SPw, and the first connection contact hole CHc1 and the second connection contact hole CHc2 corresponding to (or adjacent to) the B sub-pixel SPb. Similarly, the protection pattern PP disposed between adjacent R sub-pixels SPr and G sub-pixels SPg may be formed to surround the first connection contact hole CHc1 and the second connection contact hole CHc2 corresponding to the R sub-pixel SPr and the first connection contact hole CHc1 and the second connection contact hole CHc2 corresponding to the G sub-pixel SPg.

[0099] Meanwhile, the protection pattern PP may be formed to be spaced apart from the light-emitting layer 165 on the upper surface of the partition 160, for example. That is, the protection pattern PP may be formed outside the light-emitting layer 165. As another example, the protection pattern PP may be formed at the edge of the light-emitting layer 165.

[0100] The cathode (or second electrode) 169 may be formed on the light-emitting layer 165 and the protection pattern PP. The cathode 169 may be formed for each sub-pixel SP and may be physically separated and spaced apart from the cathodes 169 of adjacent sub-pixels SP.

[0101] When the light-emitting display device 10 is a top-emitting type, the cathode 169 may include a transparent electrode layer made of a transparent conductive material (e.g., ITO, IZO, IZTO, etc.). As another example, when the light-emitting display device 10 is a bottom-emitting type, the cathode 169 may include a reflective layer formed of a metal.

[0102] The anode 150, the light-emitting layer 165, and the cathode 169 disposed in the first opening OP1 in each sub-pixel SP as described above may constitute a light-emitting diode OD.

[0103] The light-emitting diode OD emits light from the light-emitting layer 165 between the anode 150 and the cathode 169, and the emitted light may travel upward and be output.

[0104] To emit light, the cathode 169 of each sub-pixel SP may be connected to the power line VL through the corresponding connection contact holes CHc1 and CHc2 in the connection region CA to receive the low-potential driving voltage Vss.

[0105] Meanwhile, in this embodiment, the cathode 169 of each sub-pixel SP may be separated into a first separation region DA1 and a second separation region DA2 and may be composed of a first cathode pattern CP1 and a second cathode pattern CP2 that are physically spaced apart from each other.

[0106] Therefore, since the cathode 169 is divided into a first cathode pattern CP1 and a second cathode pattern CP2, the light-emitting diode OD of each sub-pixel SP can be composed of a first sub-light-emitting diode OD1 and a second sub-light-emitting diode OD2 having the first cathode pattern CP1 and the second cathode pattern CP2, respectively.

[0107] The first sub-light-emitting diode OD1 and the second sub-light-emitting diode OD2 can be arranged in a parallel connection form between the thin-film transistor T and the power line VL.

[0108] The first cathode pattern CP1 and the second cathode pattern CP2 can respectively have extension parts (or connection parts) CCP extending from a first separation area DA1 and a second separation area DA2 to a connection area CA for connection in the connection area CA.

[0109] The extension parts CCP of the first cathode pattern CP1 and the second cathode pattern CP2 can be connected to the power line VL through corresponding (or adjacent) first connection contact holes CHc1 and second connection contact holes CHc2, respectively. Therefore, a low-potential driving voltage Vss can be supplied to the first cathode pattern CP1 and the second cathode pattern CP2.

[0110] Therefore, each sub-pixel SP can perform a light-emitting operation through each of the first separation area DA1 and the second separation area DA2.

[0111] Meanwhile, the first cathode pattern CP1 and the second cathode pattern CP2 can cover a protection pattern PP formed along the periphery of the connection area CA. That is, the first cathode pattern CP1 and the second cathode pattern CP2 can extend across the protection pattern PP into the connection area CA.

[0112] Therefore, in the cross-section of the part of each of the first cathode pattern CP1 and the second cathode pattern CP2 covering the protection pattern PP (or a part of each extension part CCP), there can be an irregular uneven shape along the surface of the protection pattern PP.

[0113] In this way, since the part of the extension part CCP located on the protection pattern PP has an irregular uneven shape, this part has a relatively high resistance Rc.

[0114] In this regard, the parts of the cathode patterns CP1 and CP2 located inside and outside the protection pattern PP have a constant thickness and a smooth shape, while the part of the extension part CCP covering the protection pattern PP has an uneven shape. Therefore, compared with other parts, the part of the extension part CCP located on the protection pattern PP has a high resistance Rc due to its morphological characteristics.

[0115] In this case, when repairing the darkening of the sub-pixel SP caused by foreign matter, if a repair current is applied to the cathode patterns CP1 and CP2, the repair current will concentrate on the cathode pattern where the foreign matter exists. In this case, the portion of the extended portion CCP covering the protection pattern PP is Joule-heated due to the high resistance Rc, so that this portion can be melted and removed. As a result, the extended portion CCP of the cathode pattern is physically separated (i.e., disconnected) on the protection pattern PP, so that the cathode pattern with foreign matter and the power supply line VL are isolated from each other, and the low-potential drive voltage Vss is not applied to this cathode pattern. Therefore, the separated area with foreign matter becomes dark in the non-light-emitting state.

[0116] Thus, since the separated areas without foreign matter can normally perform the light-emitting function, it is possible to effectively prevent the entire sub-pixel SP from darkening due to foreign matter.

[0117] Meanwhile, in each sub-pixel SP, the cathode 169 can be configured such that, for example, portions of the cathode 169 other than the extended portion CCP are disposed inside the light-emitting layer 165. In this regard, in each of the first cathode pattern CP1 and the second cathode pattern CP2 of the cathode 169, the side surface (or side end) of the electrode portion CEP, which is the portion other than the extended portion CCP, can be located inside the side surface (or side end) of the light-emitting layer 165.

[0118] In this way, by forming the electrode portion CEP of the cathode 169 other than the extended portion CCP within the region of the light-emitting layer 165, the shrinkage phenomenon of the light-emitting region within the sub-pixel SP can be reduced (or delayed) or prevented. In this regard, the end portion of the light-emitting layer 165 may deteriorate due to the penetration of moisture, oxygen, etc. If the cathode 169 is formed to cover the end portion of the light-emitting layer 165 and has a larger area than the light-emitting layer 165, the deterioration progresses inward along the cathode 169, resulting in the shrinkage of the light-emitting region.

[0119] However, when the cathode 169 is substantially formed with a small area without covering the end portion of the light-emitting layer 165, as in this embodiment, the progress of deterioration can be prevented, so that the shrinkage phenomenon of the light-emitting region can be improved.

[0120] In addition, in this embodiment, as described above, each of the anode 150 and the light-emitting layer 165 can be integrally formed within each sub-pixel SP having a partition structure and can be continuously formed along the first partition region DA1 and the second partition region DA2. Therefore, compared with the structure in which each of the anode 150 and the light-emitting layer 165 is partitioned into the first partition region DA1 and the second partition region DA2, there is no need to consider tolerances, etc., so that the maximum aperture ratio can be ensured in the partition structure.

[0121] Hereinafter, referring toFigures 5 to 9 and Figures 1 to 4 Describe a method for manufacturing the light-emitting display device 10 of the present embodiment. Figures 5 to 9 is a plan view schematically showing a method for manufacturing a light-emitting display device according to a first embodiment of the present invention, and shows the process of forming a light-emitting diode and a protection pattern. For ease of explanation, Figure 8 mainly shows the first cathode pattern CP1 and the second cathode pattern CP2 constituting the cathode 169.

[0122] First, referring to Figure 5 , by using a photolithography method, an anode 150 can be formed for each sub-pixel SP above a substrate 101 on which a passivation layer 135 is formed. The anodes 150 of adjacent sub-pixels SP (for example, sub-pixels SP adjacent in the row direction) can be formed to surround, for example, a connection area CA located between adjacent sub-pixels SP.

[0123] After forming the anode 150, as described above, a dam 160 can be formed to cover the edge of the anode 150.

[0124] Next, referring to Figure 6 , by using a photolithography method, a light-emitting layer 165 can be formed for each sub-pixel SP on the anode 150 and the dam 160. The light-emitting layers 165 of adjacent sub-pixels SP (for example, sub-pixels SP adjacent in the row direction) can be formed to surround, for example, a connection area CA located between adjacent sub-pixels SP.

[0125] Next, referring to Figure 7 , a protection pattern PP can be formed on the dam 160 along the boundary between the sub-pixel SP and the connection area CA. The protection pattern PP can be formed of a polymer, and more preferably, can be formed of a fluorine-based polymer.

[0126] The protection pattern PP can be composed of a plurality of polymer nanowires PNW, and the upper surface of the protection pattern PP can be formed to have a substantially irregular uneven shape.

[0127] Regarding the formation of the protection pattern PP, for example, by coating a fluorine-based polymer and then performing a plasma treatment, a plurality of polymer nanowires PNW arranged irregularly can be formed. Therefore, a protection pattern PP composed of an aggregate of polymer nanowires PNW and having an irregular uneven shape on the surface can be formed.

[0128] The protection pattern PP can be formed along the periphery of the connection area CA and can be configured to surround connection contact holes CHc1 and CHc2 arranged in the connection area CA.

[0129] Next, referring to Figure 8 and Figure 9, a cathode 169 may be formed for each sub-pixel SP on the light emitting layer 165, the bank 160, and the protection pattern PP by a photo patterning method. In each sub-pixel SP, the cathode 169 may be formed into a structure separated into a first separation area DA1 and a second separation area DA2. Therefore, the cathode 169 may include a first cathode pattern CP1 and a second cathode pattern CP2 that are respectively disposed in the first separation area DA1 and the second separation area DA2 and are spaced apart from each other.

[0130] Each of the first and second cathode patterns CP1 and CP2 of the cathode 169 may have an extension portion CCP extending into the connection area CA. The extension portions CCP of the first and second cathode patterns CP1 and CP2 may be connected to the power line VL through adjacent first and second connection contact holes CHc1 and CHc2, respectively.

[0131] Therefore, in each sub-pixel SP, a first sub-light emitting diode OD1 is formed in a first separation area DA1 in which a first cathode pattern CP1 is formed, and a second sub-light emitting diode OD2 is formed in a second separation area DA2 in which a second cathode pattern CP2 is formed, and a light emitting diode OD consisting of the first sub-light emitting diode OD1 and the second sub-light emitting diode OD2 connected in parallel to each other can be provided.

[0132] The first and second cathode patterns CP1 and CP2 may extend into the connection area CA across the protection pattern PP. Therefore, portions of the first and second cathode patterns CP1 and CP2 covering the protection pattern PP may have irregular uneven shapes along the surface of the protection pattern PP in cross-section.

[0133] As a part of each of the cathode patterns CP1 and CP2, a portion of the extension portion CCP having an irregular uneven shape has a higher resistance Rc than surrounding portions thereof due to the uneven shape.

[0134] For the sub-pixel SP formed in the separation structure, in the case where foreign matter is introduced into the sub-pixel SP and the anode 150 and the cathode 169 are short-circuited, a method of repairing this is described in detail below.

[0135] Figure 10 , Figure 11 and Figure 12 1 and 2 are a plan view, a cross-sectional view, and a circuit diagram respectively showing a case where foreign matter exists in a sub-pixel of a light emitting display device according to a first embodiment of the present invention. Figure 13 , Figure 14 and Figure 15A plan view, a cross-sectional view, and a circuit diagram respectively showing a case where a first repair process (or a first aging process) is performed on a sub-pixel of a light-emitting display device according to a first embodiment of the present invention to remove foreign substances and solve a short circuit between an anode and a cathode. Meanwhile, in Figures 10 to 15 For ease of explanation, a case where foreign substances FS are introduced into and removed from the first separation region DA1 of the W sub-pixel SPw is taken as an example.

[0136] Refer to Figures 10 to 12 After the anode 150 is formed, foreign substances FS may be introduced into the first separation region DA1 of the W sub-pixel SPw and remain on the anode 150.

[0137] Therefore, when the light-emitting layer 165 and the cathode 169 are formed on the anode 150, the light-emitting layer 165 and the cathode 169 may be abnormally deposited along the foreign substances FS on the part where the foreign substances FS exist in the first separation region DA1.

[0138] In this case, the light-emitting layer 165 and the cathode 169 are deposited on the foreign substances FS, and the light-emitting layer 165 and the cathode 169 are not deposited around the foreign substances FS and are disconnected, so that the light-emitting layer 165 and the cathode 169 are not formed on the upper surface of the anode 150 where the foreign substances FS exist. The inner end of the cathode 169 may directly contact the anode 150 around the foreign substances FS and be short-circuited with the anode 150.

[0139] If the cathode 169 and the anode 150 are short-circuited in this way, most of the light-emitting current for driving the light-emitting diode OD to emit light flows along the short-circuit path of the anode 150 and the cathode 169, making the entire sub-pixel SP dim.

[0140] To improve this, a first repair process may be performed to remove the foreign substances FS in the first separation region DA1 and the surrounding light-emitting layer 165 and cathode 169.

[0141] For example, a first repair current Ir1 may be applied in a reverse direction opposite to the forward direction which is the direction of the current flowing from the light-emitting diode OD to emit light. To this end, a first voltage V1 with a relatively high potential may be applied to the power supply line VL, and a second voltage V2 with a potential lower than the first voltage V1 (or alternately a second voltage V2 with the same potential as the first voltage V1 and a potential lower than the first voltage V1) may be applied to the power supply line for supplying the high-potential driving voltage Vdd to the sub-pixel SP.

[0142] Therefore, the first repair current Ir1 mainly flows along the short-circuit path of the anode 150 and the cathode 169, and the short-circuit part between the anode 150 and the cathode 169 is Joule-heated due to its resistance Rac.

[0143] Therefore, as Figures 13 to 15As shown, the short - circuited portion between the anode 150 and the cathode 169 and the foreign substance FS can be melted and removed. Through this repair operation, a repair hole Hr can be formed in the portion where the foreign substance FS exists. In this case, the inner end of the cathode 169 around the repair hole Hr can have a shape that is rolled up upward due to melting, so that the cathode 169 and the anode 150 can be physically separated.

[0144] Therefore, the short - circuit state between the cathode 169 and the anode 150 is solved, and an open state is created. As a result, the darkening defect of the sub - pixel SP is solved, and thus the normal light - emitting function can be performed.

[0145] Meanwhile, in some cases, the above - mentioned first repair process may fail, resulting in the foreign substance FS may not be removed and the short - circuit state may be maintained, or even if the foreign substance FS is removed, the short - circuit state is still maintained.

[0146] In this case, a second repair process (or a second aging process) can be performed to physically disconnect (or separate) the first cathode pattern CP1 of the first separation region DA1.

[0147] Refer to Figures 16 to 19 to describe this second repair process. Figure 16 and Figure 17 are a plan view and a circuit diagram respectively showing the case of holding a foreign substance in the sub - pixel of the light - emitting display device according to the first embodiment of the present invention. Figure 18 and Figure 19 are a plan view and a circuit diagram respectively showing the case where the cathode pattern is disconnected by performing a second repair process (or a second aging process) on the sub - pixel of the light - emitting display device according to the first embodiment of the present invention.

[0148] Refer to Figure 16 and Figure 17 After performing the above - mentioned first repair process but failing, the foreign substance FS is not removed, so the short - circuit state between the anode 150 and the cathode 169 is maintained. Or, even if the foreign substance FS is removed, the short - circuit state between the anode 150 and the cathode 169 is still maintained.

[0149] In the above - mentioned case, the entire sub - pixel SP still has a darkening defect.

[0150] To improve this, a second repair process can be performed to physically disconnect the first cathode pattern CP1 of the first separation region DA1 in the short - circuit state.

[0151] For example, a second repair current Ir2 may be applied in a reverse direction opposite to a forward direction of a current emitted from a light-emitting diode OD. To this end, a third voltage V3 having a relatively high potential may be applied to a power line VL, and a fourth voltage V4 having a potential lower than the third voltage V3 (or alternatively a fourth voltage V4 having the same potential as the third voltage V3 and a potential lower than the third voltage V3) may be applied to a power line for supplying a high-potential power supply voltage Vdd to a sub-pixel SP. A difference between the third voltage V3 and the fourth voltage V4 in the second repair process may be greater than a difference between the first voltage V1 and the second voltage V2 in the first repair process. That is, the second repair current Ir2 may be higher than the first repair current Ir1.

[0152] In this regard, portions of the cathode patterns CP1 and CP2 formed on the protection pattern PP and having an irregular uneven shape may be formed to be substantially non-melting when the first repair current Ir1 is applied during the first repair process, but melting when a second repair current Ir2 higher than the first repair current Ir1 is applied during the second repair process.

[0153] Accordingly, the second repair process is set to more severe conditions than the first repair process and may be executed when the first repair process fails.

[0154] When the second repair process is executed and the second repair current Ir2 is applied, the second repair current Ir2 mainly flows along a short-circuit path, so that the second repair current Ir2 can be concentrated on the first cathode pattern CP1 in a state of being short-circuited with the anode 150 in the first separation region DA1.

[0155] In this case, as Figure 18 and Figure 19 shown, as a portion of the protection pattern PP covering the first cathode pattern CP1, a part of the extension portion CCP is joule-heated due to a high resistance Rc, so that this part can be melted and removed. By this repair operation, the first cathode pattern CP1 is physically separated on the protection pattern PP to form a repair separation groove GR. Accordingly, the first cathode pattern CP1 and the power line VL can be isolated from each other. In this case, similar to the above-described first repair process, an inner end of the first cathode pattern CP1 along a periphery of the repair separation groove GR may have a shape that is rolled up upward due to melting.

[0156] Through the second repair process as described above, the first separation region DA1 where the first cathode pattern CP1 short-circuited with the anode 150 due to a foreign substance FS may become dark in a non-light-emitting state.

[0157] Therefore, the second separation region DA2 of the sub-pixel SP without the foreign substance FS can normally perform the light-emitting function, thereby effectively preventing the entire sub-pixel SP from dimming due to a short circuit caused by the foreign substance FS.

[0158] Meanwhile, through the second repair process as described above, the foreign substance FS and the short-circuited portion around it can be melted and removed, thereby forming a repair hole Hr.

[0159] <Second Embodiment>

[0160] Figure 20 is a plan view schematically showing a light-emitting display device according to a second embodiment of the present invention.

[0161] Figure 21 is a circuit diagram schematically showing a circuit configuration of a sub-pixel according to a second embodiment of the present invention.

[0162] In the following description, a detailed description of configurations identical or similar to those of the above-described first embodiment may be omitted.

[0163] Except for the structure of the power line VL, the light-emitting display device 10 of the present embodiment may be configured in the same and similar manner as the first embodiment.

[0164] Reference Figure 20 and Figure 21 In the light-emitting display device 10 of the present embodiment, similar to the first embodiment, each sub-pixel SP may be formed in a separated structure, and the cathode 169 may be composed of a first cathode pattern CP1 and a second cathode pattern CP2 that are respectively disposed in the first separation region DA1 and the second separation region DA2 and are separated from each other.

[0165] Meanwhile, in the light-emitting display device 10 of the present embodiment, for example, with respect to the power line VL extending along each row line and connected to the sub-pixel SP, a first power line VL1 and a second power line VL2 respectively connected to the first cathode pattern CP1 and the second cathode pattern CP2 may be provided.

[0166] That is, in each row line, a first power line VL1 connected to the first cathode pattern CP1 located in the first separation region DA1 of the sub-pixel SP through a first connection contact hole CHc1 and a second power line VL2 connected to the second cathode pattern CP2 located in the second separation region DA2 of the sub-pixel SP through a second connection contact hole CHc2 may be arranged.

[0167] The first power line VL1 and the second power line VL2 may be formed to extend in parallel in the row direction and be spaced apart from each other, for example.

[0168] Therefore, in the present embodiment, the first cathode pattern CP1 and the second cathode pattern CP2 can be separately connected to the first power line VL1 and the second power line VL2, rather than being commonly connected to the same power line. Therefore, the current transmission paths from the first power line VL1 and the second power line VL2 to the first separation region DA1 and the second separation region DA2 can be individualized and separated from each other.

[0169] Therefore, during the first repair process and the second repair process, a repair current can be stably supplied to the cathode pattern (e.g., the first cathode pattern CP1) short-circuited with the anode 150 due to foreign matter, thereby improving the efficiency and success rate of the repair process.

[0170] In addition, since the transmission paths of the light-emitting currents to the first separation region DA1 and the second separation region DA2 can also be individualized and separated from each other, signal interference between the first separation region DA1 and the second separation region DA2 can be reduced, and the light-emitting characteristics of each separation region can be stabilized.

[0171] As described above, according to an embodiment of the present invention, the cathode of the sub-pixel can be formed in a separated structure, the separated cathode patterns can be connected to the power line through corresponding connection contact holes in the connection region, and a protection pattern having a rough surface and an uneven shape formed along the periphery of the connection region can be formed under the cathode pattern. Therefore, the portion of the cathode pattern located on the protection pattern can have an uneven shape and thus has a high resistance.

[0172] Therefore, in the case where the anode and the cathode are short-circuited due to foreign matter and the entire sub-pixel becomes dark, when the first repair process for removing the foreign matter and the short-circuited portion around it fails and the short-circuit state is not resolved, a second repair process can be performed to separate and disconnect the cathode pattern of the separation region having the short-circuit state on the protection pattern.

[0173] Therefore, the separation regions without foreign matter can normally perform the light-emitting function, thereby effectively preventing the defect that the entire sub-pixel becomes dark due to a short circuit caused by foreign matter.

[0174] In addition, a power line separately connected to the cathode pattern of the sub-pixel can be provided. Therefore, a repair current can be stably supplied to the short-circuited cathode pattern, thereby improving the efficiency and success rate of the repair process.

[0175] In addition, the cathode can be formed in a small area without covering the end portion of the light-emitting layer within the sub-pixel. Therefore, deterioration can be prevented from progressing into the light-emitting layer, and the shrinkage phenomenon of the light-emitting region can be improved.

[0176] In addition, each of the anode and the light-emitting layer may be integrally formed within the sub-pixel and may be continuously formed along the separation region. Therefore, compared with the case where each of the anode and the light-emitting layer is formed as a separated structure, there is no need to consider tolerances, etc., and the maximum aperture ratio can be ensured in the separation structure of the cathode.

[0177] In addition, the protective pattern may be formed of a fluorine-based polymer having excellent moisture-proof performance. Therefore, moisture penetration into the light-emitting layer can be effectively prevented or at least reduced.

[0178] It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Therefore, the present invention is intended to cover modifications and variations of the present invention that fall within the scope of the appended claims and their equivalents.

Claims

1. A light-emitting display device, comprising: A substrate including a display area where a plurality of sub-pixels are arranged and a connection area between adjacent sub-pixels arranged among the plurality of sub-pixels; a first electrode on a first separation region and a second separation region of a sub-pixel among the plurality of sub-pixels; a bank along a boundary of the sub-pixel, the bank comprising a first opening exposing the first electrode and a second opening corresponding to the connection region; a light-emitting layer on the first electrode and on the first separation region and the second separation region; a protection pattern on the dam around the connection area, the protection pattern having an upper surface with an irregular and uneven shape; as well as a second electrode on the light emitting layer, the second electrode comprising a first electrode pattern and a second electrode pattern formed in the first separation region and the second separation region, respectively; Each of the first electrode pattern and the second electrode pattern extends into the connection area while covering the protection pattern, and is connected to the power line in the connection area.

2. The light-emitting display device according to claim 1, wherein: The protection pattern includes a fluorine-based polymer.

3. The light-emitting display device according to claim 2, wherein: The protection pattern includes a plurality of nanowires including a fluorine-based polymer and irregularly arranged.

4. The light-emitting display device according to claim 1, wherein: A portion of each of the first electrode pattern and the second electrode pattern covering the protection pattern has a higher resistance than another portion of each of the first electrode pattern and the second electrode pattern.

5. The light-emitting display device according to claim 1, wherein: The protection pattern surrounds the connection area.

6. The light-emitting display device according to claim 1, wherein: A first connection contact hole and a second connection contact hole are provided in the connection region, The first electrode pattern and the second electrode pattern are connected to the power line through the first connection contact hole and the second connection contact hole, respectively.

7. The light-emitting display device according to claim 1, wherein: The first electrode is integrally located in the sub-pixel, Wherein, the light emitting layer is integrally located in the sub-pixel, The first electrode pattern and the second electrode pattern are physically separated from each other within the sub-pixel.

8. The light-emitting display device according to claim 1, wherein: Each of the first electrode pattern and the second electrode pattern is configured such that an electrode portion except an extending portion extending into the connection region while covering the protection pattern is located inside the light emitting layer.

9. The light-emitting display device according to claim 1, wherein: The power lines include first and second power lines respectively connected to the first and second electrode patterns and spaced apart from each other.

10. The light emitting display device according to claim 1, wherein: In a case where the first separation region of the sub-pixel is in a darkening defective state, the first electrode pattern disposed in the first separation region has a disconnected state on the protection pattern.

11. A light-emitting display device, comprising: a substrate including a display region having a plurality of sub-pixels and a connection region between adjacent sub-pixels of the plurality of sub-pixels; a first electrode and a light emitting layer within a sub-pixel of the plurality of sub-pixels; a protection pattern located at a boundary between each of the first and second separation regions of the sub-pixel and the connection region, the protection pattern having an upper surface with an uneven shape; as well as a second electrode on the light emitting layer, the second electrode comprising a first electrode pattern and a second electrode pattern in the first separation region and the second separation region, respectively; Each of the first electrode pattern and the second electrode pattern extends into the connection area while covering the protection pattern, and is connected to the power line in the connection area.

12. The light-emitting display device according to claim 11, wherein: The protection pattern includes a plurality of nanowires, the plurality of nanowires include a polymer and are irregularly arranged, Wherein a portion of each of the first electrode pattern and the second electrode pattern covering the protection pattern has an uneven shape along the protection pattern.

13. The light-emitting display device according to claim 11, wherein: A portion of each of the first electrode pattern and the second electrode pattern covering the protection pattern has a higher resistance than another portion of each of the first electrode pattern and the second electrode pattern.

14. The light-emitting display device according to claim 11, wherein: The power lines include first and second power lines respectively connected to the first and second electrode patterns and spaced apart from each other.

15. The light-emitting display device according to claim 11, wherein: In a case where the first separation region of the sub-pixel is in a darkening defective state, the first electrode pattern disposed in the first separation region has a disconnected state on the protection pattern.

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