Display device

Abstract

A display device may include: a substrate; a transistor disposed on the substrate; a connection electrode electrically connected to a source electrode or a drain electrode of the transistor; a planarization layer disposed on the transistor and the connection electrode; a plurality of light emitting elements disposed on the planarization layer; and a plurality of connection lines configured to be in contact with the connection electrode and the plurality of light-emitting elements, where the plurality of light-emitting elements includes a first light-emitting element and a second light-emitting element, and where the plurality of connection lines are made of a conductive oxide, disposed between the first light-emitting element and the second light-emitting element, and a cover disposed to cover end portions of the anodes of the first and second light emitting elements.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0195723, filed on December 28, 2023, the entire disclosure of which is incorporated herein by reference. Technical field

[0003] This application relates to a display device, and more particularly, to a display device capable of minimizing or at least reducing the degradation of reliability caused by the physical deformation of a connection line irradiated with a laser beam during a repair process. Background art

[0004] As displays for computers, televisions (TVs), mobile phones, etc., there are organic light - emitting display (OLED) devices configured to emit light autonomously and liquid - crystal display (LCD) devices that require a separate light source.

[0005] The application range of display devices has been diversified, from displays for computers and TVs to personal mobile devices, and display devices with a large display area and reduced volume and weight are being studied.

[0006] In addition, after the process of manufacturing a display device, a lighting inspection process may be performed on the display device to check for defective sub - pixels having dark - spot defects or bright - spot defects. When a defective sub - pixel is detected, a repair process of separating the anode of the defective sub - pixel from the pixel circuit by using a laser may be performed. Summary of the invention

[0007] One object to be achieved by this application is to provide a high - efficiency, low - power display device capable of minimizing or at least reducing the degradation of reliability of a peripheral portion caused by the physical deformation of a connection line irradiated with a laser beam during a repair process.

[0008] Another object to be achieved by this application is to provide a high - quality display device in which, without adding a separate structure for repair, the reduction of a light - emitting area is minimized or at least reduced by using a contact hole as a repair point.

[0009] The objects of the present disclosure are not limited to the above - mentioned objects, and those skilled in the art can clearly understand other objects not mentioned above from the following description.

[0010] To achieve the above object, a display device according to an exemplary embodiment of the present disclosure may include: a substrate; a transistor disposed on the substrate; a connection electrode electrically connected to a source electrode or a drain electrode of the transistor; a planarization layer disposed on the transistor and the connection electrode; a plurality of light-emitting elements disposed on the planarization layer; and a plurality of connection lines configured to be in contact with the connection electrode and the plurality of light-emitting elements, wherein the plurality of light-emitting elements include a first light-emitting element and a second light-emitting element, and wherein the plurality of connection lines are made of a conductive oxide, disposed between the first light-emitting element and the second light-emitting element, and configured to cover an end portion of an anode of the first light-emitting element and an end portion of an anode of the second light-emitting element.

[0011] To achieve the above object, a display device according to another exemplary embodiment of the present disclosure may include: a substrate on which a plurality of sub-pixels are disposed; a transistor in each of the plurality of sub-pixels disposed on the substrate; a connection electrode electrically connected to a source electrode or a drain electrode of the transistor; a planarization layer disposed on the transistor and the connection electrode; a first light-emitting element and a second light-emitting element disposed on the planarization layer in one sub-pixel; and a plurality of connection lines configured to electrically connect the first light-emitting element, the second light-emitting element, and the connection electrode, wherein the plurality of connection lines are made of a conductive oxide, and configured to cover an end portion of an anode of the first light-emitting element and an end portion of an anode of the second light-emitting element disposed in the one sub-pixel, and wherein at least one of the plurality of connection lines includes a low-resistance portion and a high-resistance portion having a resistance value higher than that of the low-resistance portion.

[0012] Other details of the exemplary embodiments are included in the detailed description and the drawings.

[0013] According to the present application, deterioration of the reliability of the display device occurring during a repair process can be minimized or at least reduced.

[0014] According to the present application, reduction of the light-emitting area can be minimized or at least reduced while providing a structure that can be repaired.

[0015] The effects according to the present disclosure are not limited to those exemplified above, and the present application includes more various effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other aspects, features, and other advantages of the present disclosure will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which:

[0017] Figure 1 is a top plan view of a display device according to an embodiment of the present application;

[0018] Figure 2A and Figure 2B is an enlarged top plan view of a sub-pixel in a display device according to an embodiment of the present application, in which both the first light-emitting element and the second light-emitting element are normal;

[0019] Figure 2C is a sectional view taken along line A-A' in Figure 2B in accordance with an embodiment of the present application;

[0020] Figure 3A is an enlarged top plan view of a sub-pixel in a display device according to an embodiment of the present application, in which the first light-emitting element is defective;

[0021] Figure 3B is a sectional view taken along line B-B' in Figure 3A in accordance with an embodiment of the present application;

[0022] Figure 3C is an enlarged view of region C in Figure 3B in accordance with an embodiment of the present application;

[0023] Figure 4A is an enlarged top plan view of a sub-pixel in a display device according to an embodiment of the present application, in which the second light-emitting element is defective;

[0024] Figure 4B is a sectional view taken along line D-D' in Figure 4A in accordance with an embodiment of the present application;

[0025] Figure 5A is an enlarged top plan view of a sub-pixel in a display device according to an embodiment of the present application, in which both the first light-emitting element and the second light-emitting element are defective;

[0026] Figure 5B is a sectional view taken along line E-E' in Figure 5A in accordance with an embodiment of the present application;

[0027] Figure 6A and Figure 6B is an enlarged top plan view of a sub-pixel in a display device according to another embodiment of the present application, in which both the first light-emitting element and the second light-emitting element are normal;

[0028] Figure 6C is a sectional view taken along line F-F' in Figure 6B in accordance with an embodiment of the present application;

[0029] Figure 7A is an enlarged top plan view of a sub-pixel in a display device according to another embodiment of the present application, in which the first light-emitting element is defective;

[0030] Figure 7B is a cross-sectional view taken along line G-G' in Figure 7A ;

[0031] Figure 7C is an enlarged view of region H in Figure 7B according to an embodiment of the present application;

[0032] Figure 8A is an enlarged top plan view of a sub-pixel in a display device according to another embodiment of the present application, in which the second light-emitting element is defective;

[0033] Figure 8B is a cross-sectional view taken along line I-I' in Figure 8A according to an embodiment of the present application;

[0034] Figure 9A is an enlarged top plan view of a sub-pixel in a display device according to another embodiment of the present application, in which the first and second light-emitting elements are defective;

[0035] Figure 9B is a cross-sectional view taken along line J-J' in Figure 9A according to an embodiment of the present application. DETAILED DESCRIPTION

[0036] Advantages and features of the present disclosure and methods for achieving these advantages and features will become clear by referring to the exemplary embodiments described in detail below in conjunction with the accompanying Figure One drawings. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided only by way of example to enable those skilled in the art to fully understand the disclosure of the present invention and the scope of the present disclosure.

[0037] The shapes, sizes, ratios, angles, quantities, etc. shown in the drawings for describing the exemplary embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. The same reference numerals generally denote the same elements throughout the application. In addition, in the following description of the present disclosure, detailed explanations of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure. Terms such as "including", "having", and "comprising" used herein generally intend to allow the addition of other components, unless these terms are used with the term "only". Any singular reference may include the plural form, unless otherwise clearly stated.

[0038] Even if not explicitly stated, components are still interpreted as including the usual error ranges.

[0039] When terms such as "on", "above", "below", and "after" are used to describe the positional relationship between two parts, one or more parts may be provided between these two parts, unless the terms use the terms "immediately" or "directly".

[0040] When an element or layer is provided "on" another element or layer, the one element or layer may be directly provided on the other element or layer or other elements or other layers may be interposed therebetween.

[0041] Although terms such as "first", "second", etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, within the technical concept of the present disclosure, the first component mentioned below may be the second component.

[0042] The same reference numerals generally denote the same elements throughout the application.

[0043] For the sake of convenience in description, the dimensions and thicknesses of each component shown in the drawings are shown, and the present disclosure is not limited to the dimensions and thicknesses of the components shown in the drawings.

[0044] The features of the embodiments of the present disclosure may be partially or wholly combined or integrated with each other, and may be interrelated and operated in various technical manners, and the embodiments may be implemented independently of each other or implemented in association with each other.

[0045] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0046] Figure 1 is a top plan view of a display device according to an embodiment of the present application. For convenience of description, Figure 1 illustrates a substrate 110 and a plurality of sub-pixels SP among the components of the display device 100.

[0047] The substrate 110 is a support member for supporting other components of the display device 100. The substrate 110 includes a display area AA and a non-display area NA. The substrate 110 may be made of an insulating material. For example, the substrate 110 may be made of glass, resin, etc. In addition, the substrate 110 may include plastics such as polymers or polyimide (PI) and may be made of a flexible material.

[0048] The display area AA of the substrate 110 is an area for displaying an image. The display area AA may include a plurality of sub-pixels SP for displaying an image and a pixel circuit configured to operate the plurality of sub-pixels SP. The pixel circuit may include various thin film transistors, storage capacitors, lines, etc. for operating the sub-pixels SP.

[0049] The non-display area NA is an area where an image is not displayed. Various lines, driving ICs, etc. for operating sub-pixels SP provided in the display area AA are provided in the non-display area NA. For example, various driving ICs such as a gate driver IC and a data driver IC can be provided in the non-display area NA.

[0050] In addition, Figure 1 It is illustrated that the non-display area NA surrounds the display area AA. However, the non-display area NA can be an area extending from one side of the display area AA. However, the present application is not limited thereto.

[0051] A plurality of sub-pixels SP are provided in the display area AA of the substrate 110. Each of the plurality of sub-pixels SP is a single unit configured to emit light. A light-emitting element and a pixel circuit are formed in each of the plurality of sub-pixels SP. For example, the plurality of sub-pixels SP may include a red sub-pixel, a green sub-pixel, a blue sub-pixel, and a white sub-pixel. However, the present application is not limited thereto.

[0052] Hereinafter, with reference to Figures 2A to 2C A sub-pixel in which all of a plurality of light-emitting elements are normal in a display device according to an embodiment of the present application will be described in more detail.

[0053] Figure 2A And Figure 2B is an enlarged plan view from above of a sub-pixel in a display device according to an embodiment of the present application in which a first light-emitting element and a second light-emitting element are both normal. Figure 2C is a cross-sectional view taken along line A-A' in Figure 2B in accordance with an embodiment of the present application. Figure 2A is a plan view from above of a sub-pixel in which a first light-emitting element and a second light-emitting element are both normal among a plurality of sub-pixels. For ease of explanation, Figure 2A only the first anode 121a, the second anode 121b, the connection electrode CE, the first connection line CLa, the second connection line CLb, and the bank 115 among the respective constituent elements of the display device are illustrated.

[0054] Each of the plurality of sub-pixels SP includes a light-emitting area and a circuit area.

[0055] The light-emitting region is a region that can independently emit light of a single color. A light-emitting element can be disposed in the light-emitting region. The plurality of sub-pixels SP can include a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel that emit light beams of different colors. For example, the light-emitting region of the first sub-pixel can be a red light-emitting region that emits red light, the light-emitting region of the second sub-pixel can be a white light-emitting region that emits white light, the light-emitting region of the third sub-pixel can be a blue light-emitting region that emits blue light, and the light-emitting region of the fourth sub-pixel can be a green light-emitting region that emits green light. However, the present application is not limited thereto, and the color of the light beam realized in the plurality of light-emitting regions and the arrangement of the plurality of light-emitting regions can vary according to the design.

[0056] The circuit region is a region where a pixel circuit for operating a plurality of light-emitting elements is disposed. A plurality of transistors and capacitors can be disposed in the circuit region. For example, in the case where the pixel circuit of the sub-pixel SP has a 3T1C structure, three transistors and one storage capacitor can be disposed. However, the present application is not limited thereto.

[0057] Referring to Figure 2A and Figure 2B , a plurality of light-emitting regions EA1, EA2 are provided in each sub-pixel SP. In addition, a plurality of light-emitting elements 120a, 120b are respectively provided corresponding to the plurality of light-emitting regions EA1, EA2 in each sub-pixel SP.

[0058] The plurality of light-emitting regions EA1, EA2 include a first light-emitting region EA1 and a second light-emitting region EA2. The plurality of light-emitting elements 120a, 120b include a first light-emitting element 120a and a second light-emitting element 120b. The first light-emitting element 120a is disposed corresponding to the first light-emitting region EA1, and the second light-emitting element 120b is disposed corresponding to the second light-emitting region EA2.

[0059] The plurality of light-emitting regions EA1, EA2 can be defined by the bank 115, and the bank 115 is disposed to cover the ends of the anodes 121a, 121b of the plurality of light-emitting elements 120a, 120b. That is, the first light-emitting region EA1 can be defined as the region surrounded by the bank 115 that is disposed to cover the end of the first anode 121a of the first light-emitting element 120a. In addition, the second light-emitting region EA2 can be defined as the region surrounded by the bank 115 that is disposed to cover the end of the second anode 121b of the second light-emitting element 120b.

[0060] The first light-emitting element 120a and the second light-emitting element 120b emit light beams of the same color. The first light-emitting element 120a and the second light-emitting element 120b can be disposed to share one pixel circuit. Therefore, the first light-emitting element 120a and the second light-emitting element 120b can be configured to repair the brightness defect or dark spot defect of the sub-pixel SP. However, as will be described below with reference toFigures 3A to 5B A method for repairing defective sub-pixels SP is described in detail.

[0061] Refer to Figure 2C , in the sub-pixel SP, a buffer layer 111, a gate insulating layer GI, an inorganic insulating layer 112, a transistor T, a connection electrode CE, a passivation layer 113, a planarization layer 114, a first light-emitting element 120a, a second light-emitting element 120b, a first connection line CLa, a second connection line CLb, and a bank 115 are sequentially provided on a substrate 110.

[0062] A buffer layer 111 is provided on the substrate 110. The buffer layer 111 can reduce the penetration of moisture or impurities through the substrate 110. For example, the buffer layer 111 can be configured as a single layer or multiple layers made of silicon oxide (SiOx) or silicon nitride (SiNx). However, the present application is not limited thereto, and the buffer layer 111 may not be included according to the type of the substrate 110 or the type of the thin-film transistor.

[0063] The transistor T and the connection electrode are provided in the circuit region of each sub-pixel of a plurality of sub-pixels SP. The transistor T includes a gate electrode GE, a source electrode SE, a drain electrode DE, and an active layer ACT.

[0064] First, the active layer ACT is provided on the buffer layer 111. The active layer ACT can be made of a transparent oxide semiconductor such as indium gallium zinc oxide (IGZO), or a semiconductor material such as amorphous silicon or polycrystalline silicon. However, the present application is not limited thereto. For example, in the case where the active layer ACT is made of an oxide semiconductor, the active layer ACT may include a channel region, a source region, and a drain region, and the source region and the drain region may be regions having conductivity. However, the present application is not limited thereto.

[0065] Refer to Figure 2C , the connection electrode CE is provided on the buffer layer 111. The connection electrode CE is provided on the same layer as the active layer ACT and is provided to be spaced apart from the active layer ACT. The connection electrode CE can be made of the same material as the active layer ACT and is formed by the same process as the active layer ACT. However, the present application is not limited thereto. For example, the connection electrode CE can be made of a transparent oxide semiconductor material such as indium gallium zinc oxide (IGZO). However, the present application is not limited thereto.

[0066] In this case, the connection electrode CE may be configured to have conductivity so that the connection electrode CE functions as an electrode. For example, the connection electrode CE may be patterned by the same process as the active layer ACT and then configured to have conductivity by a process such as dry etching that makes the electrode conductive. Alternatively, the connection electrode CE may be configured to have conductivity by further adding a transparent conductive material such as indium zinc oxide (IZO) to the transparent oxide semiconductor material patterned by the same process as the active layer ACT. However, the present application is not limited thereto.

[0067] In addition, in the case where the first light emitting element 120 a and the second light emitting element 120 b disposed in the sub-pixel SP are normal, the repair process is not performed on the connection electrode CE disposed in the sub-pixel SP, so that all regions may have conductivity.

[0068] In each of the plurality of sub-pixels SP, the connection electrode CE is electrically connected to the source electrode SE or the drain electrode DE. Figure 2C As shown in , the drain electrode DE may be electrically connected to the connection electrode CE through a contact hole formed in the insulating layer 112. In addition, the first connection line CLa and the second connection line CLb respectively connected to the first light emitting element 120a and the second light emitting element 120b are disposed on the connection electrode CE. Therefore, the connection electrode CE may electrically connect the first light emitting element 120a, the second light emitting element 120b and the transistor T.

[0069] A gate insulating layer GI is disposed on the active layer ACT and the connecting electrode CE. The gate insulating layer GI may be a layer for insulating the gate electrode GE from the active layer ACT and may be made of an insulating material. For example, the gate insulating layer GI may be configured as a single layer or multiple layers made of silicon oxide (SiOx) or silicon nitride (SiNx). However, the present application is not limited thereto.

[0070] in addition, Figure 2C It is illustrated that the gate insulating layer GI is provided only in the region overlapping the gate electrode GE. However, the gate insulating layer GI may be provided in the entire region of the substrate 110. However, the present application is not limited thereto.

[0071] The gate electrode GE is disposed on the gate insulating layer 112. The gate electrode GE is disposed on the gate insulating layer GI and overlaps the active layer ACT. The gate electrode GE may be made of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof. However, the present application is not limited thereto.

[0072] An insulating layer 112 is disposed on the active layer ACT, the connection electrode CE, and the gate electrode GE. The insulating layer 112 may be a layer for insulating the active layer ACT, the gate electrode GE, the source electrode SE, and the drain electrode DE and may be made of an insulating material. For example, the insulating layer 112 may be made of an inorganic insulating material. For example, the insulating layer 112 may be configured as a single layer or multiple layers made of silicon oxide (SiOx) or silicon nitride (SiNx). However, the present application is not limited thereto.

[0073] The source electrode SE and the drain electrode DE are disposed on the insulating layer 112 and are separated from each other. Each of the source electrode SE and the drain electrode DE may be made of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof. However, the present application is not limited thereto.

[0074] For example, the source electrode SE may be electrically connected to a high potential power line through a contact hole formed in the insulating layer 112 and the buffer layer 111 .

[0075] The drain electrode DE is connected to the connection electrode CE through a contact hole formed in the insulating layer 112. Therefore, the drain electrode DE can be electrically connected to the connection electrode CE, the first connection line CLa, the second connection line CLb, the first anode 121a and the second anode 121b and transmit a driving current to the first light emitting element 120a and the second light emitting element 120b.

[0076] In addition, although not shown in the figure, a storage capacitor may be further provided in the circuit region of each of the plurality of sub-pixels SP. The storage capacitor may store the voltage between the gate electrode GE and the source electrode SE of the transistor T so that the light emitting element may continue to maintain the same state during one frame. The storage capacitor includes a first capacitor electrode and a second capacitor electrode. However, the present application is not limited thereto.

[0077] In addition, although not shown in the figure, a light shielding layer may be further provided under the active layer ACT. The light shielding layer may block light entering the active layer ACT of the transistor T. For example, in the case where light is emitted to the active layer ACT, leakage current is generated, which may deteriorate the reliability of the transistor T. Therefore, a light shielding layer made of an opaque conductive material may be provided under the active layer ACT and block light entering the active layer ACT from the lower side of the substrate 110, which may improve the reliability of the transistor T.

[0078] Next, a passivation layer 113 is disposed on the transistor T and the connection electrode CE. The passivation layer 113 is an insulating layer for protecting components disposed below the passivation layer 113. For example, the passivation layer 113 may be configured as a single layer or multiple layers made of silicon oxide (SiOx) or silicon nitride (SiNx). However, the present application is not limited thereto. In addition, the passivation layer 113 may not be included according to the embodiment.

[0079] A planarization layer 114 is disposed on the passivation layer 113. The planarization layer 114 is an insulating layer for planarizing the upper portion of the substrate 110 on which the transistor T and the connection electrode CE are disposed. The planarization layer 114 may be an organic layer made of an organic material. For example, the planarization layer 114 may be configured as a single layer or multiple layers made of an organic material such as polyimide or optical acryl. However, the present application is not limited thereto.

[0080] In each of the plurality of sub-pixels SP, a plurality of light-emitting elements 120a and 120b are disposed on the planarization layer 114. The plurality of light-emitting elements 120a and 120b include a first light-emitting element 120a and a second light-emitting element 120b. In each of the plurality of sub-pixels SP, the first light-emitting element 120a and the second light-emitting element 120b are disposed on the planarization layer 114. The plurality of light-emitting elements 120a and 120b include anodes 121a and 121b; a light-emitting layer 122 and a cathode 123. That is, the first light-emitting element 120a includes a first anode 121a, a light-emitting layer 122 and a cathode 123, and the second light-emitting element 120b includes a second anode 121b, a light-emitting layer 122 and a cathode 123.

[0081] Reference Figures 2A to 2C , the first anode 121a and the second anode 121b are respectively disposed on the planarization layer 114 corresponding to the first light emitting area EA1 and the second light emitting area EA2. Since the first anode 121a and the second anode 121b provide holes to the light emitting layer 122, the first anode 121a and the second anode 121b may be made of a conductive material having a high work function. For example, each of the first anode 121a and the second anode 121b may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). However, the present application is not limited thereto.

[0082] In addition, in the case where the display device 100 according to the embodiment of the present application is a top emission type display device, a reflective layer made of a metal material having excellent reflection efficiency, for example, a material such as aluminum (Al) or silver (Ag), may be additionally provided below the first anode 121a and the second anode 121b, so that light emitted from the light emitting layer 122 is reflected by the first anode 121a and the second anode 121b and propagates upward, that is, toward the cathode 123. For example, each of the first anode 121a and the second anode 121b may have a structure in which indium tin oxide (ITO), silver (Ag), and indium tin oxide (ITO) are sequentially stacked. However, the present application is not limited thereto.

[0083] A bank 115 is provided on the first anode 121a and the second anode 121b. The bank 115 may be provided in the remaining area except the first emission area EA1 and the second emission area EA2. The bank 115 may be provided at the boundary between the plurality of sub-pixels SP and in the circuit area of ​​the plurality of sub-pixels SP, and the bank 115 may reduce the color mixing of the light beams emitted from the plurality of sub-pixels SP. The bank 115 may include an opening portion through which the first anode 121a and the second anode 121b corresponding to the first emission area EA1 and the second emission area EA2 are at least partially exposed. The bank 115 may be made of an organic insulating material. For example, the bank 115 may be made of a polyimide-based resin, an acrylic-based resin, or a benzocyclobutene (BCB)-based resin. However, the present application is not limited thereto.

[0084] In the first light emitting area EA1 and the second light emitting area EA2, a light emitting layer 122 is provided on the first anode 121a, the second anode 121b and the bank 115. For example, the light emitting layer 122 may be configured as a layer on a plurality of sub-pixels SP. That is, the light emitting layers 122 of the plurality of sub-pixels SP may be connected to each other and integrated. The light emitting layer 122 may be configured as one light emitting layer. The light emitting layer 122 may also have a structure in which a plurality of light emitting layers configured to emit light beams having different colors are stacked. The light emitting layer 122 may further include organic material layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. For example, in the case where the light emitting layer 122 is a light emitting layer configured to emit white light, the light beam emitted from the light emitting layer 122 may be converted into a light beam having various colors by a plurality of color filters. However, the present application is not limited thereto.

[0085] A cathode 123 is provided on the light emitting layer 122. Since the cathode 123 provides electrons to the light emitting layer 122, the cathode 123 may be made of a conductive material having a low work function. The cathode 123 may be configured as a layer on a plurality of sub-pixels SP. That is, the cathodes 123 of the plurality of sub-pixels SP may be connected to each other and integrated. For example, the cathode 123 may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) or an alloy of ytterbium (Yb). The cathode 123 may further include a metal doping layer. However, the present application is not limited thereto. In addition, although not shown in the figure, the cathode 123 of each of the first light emitting element 120a and the second light emitting element 120b may be electrically connected to a low potential power supply line and provided with a low potential power supply voltage.

[0086] In each sub-pixel, the first connection line CLa and the second connection line CLb are disposed between the first light emitting element 120a and the second light emitting element 120b and are disposed at the end of the first anode 121a and the end of the second anode 121b. That is, the first connection line CLa is disposed at the end of the first anode 121a, and the second connection line CLb is disposed at the end of the second anode 121b. Therefore, the first connection line CLa and the second connection line CLb may be configured to be connected to the connection electrode CE, the first light emitting element 120a and the second light emitting element 120b and electrically connect the transistor T, the first light emitting element 120a and the second light emitting element 120b.

[0087] In addition, the first connection line CLa and the second connection line CLb are arranged to be separated from each other. Therefore, the first connection line CLa and the second connection line CLb can be configured to be electrically connected to different light-emitting elements. That is, the first connection line CLa is electrically connected to the first light-emitting element 120a, and the second connection line CLb is electrically connected to the second light-emitting element 120b.

[0088] Reference Figures 2A to 2C , the first connection line CLa and the second connection line CLb are in contact with the top surface of the connection electrode CE through the contact holes formed in the passivation layer 113 and the planarization layer 114. Therefore, the first connection line CLa and the second connection line CLb can be electrically connected to the connection electrode CE. The first connection line CLa is arranged to extend from the end of the first anode 121a to the connection electrode CE. The second connection line CLb is arranged to extend from the end of the second anode 121b to the connection electrode CE.

[0089] In each sub-pixel, the first connection line CLa and the second connection line CLb may be electrically connected to one connection electrode CE. That is, the first light emitting element 120a and the second light emitting element 120b may be electrically connected to one transistor T. Therefore, each of the first connection line CLa and the second connection line CLb may be used as a repairing portion for repairing a sub-pixel SP having a bright spot defect or a dark spot defect by selectively blocking the electrical connection between the first light emitting element 120a, the second light emitting element 120b, and the transistor T. However, the repairing portion will be described below with reference to Figures 3A to 5B A method of repairing a defective sub-pixel SP having a bright spot defect or a dark spot defect is described in detail.

[0090] in addition, Figures 2A to 2C A normal sub-pixel having no defects and not subjected to a repair process is illustrated. In this case, if the first light emitting element 120a and the second light emitting element 120b disposed in the sub-pixel SP are both normal, the repair process is not performed on the first connection line CLa and the second connection line CLb disposed in the sub-pixel SP, so that the first connection line CLa and the second connection line CLb can both be conductive.

[0091] The first connection line CLa and the second connection line CLb may be made of a transparent conductive oxide. For example, each of the first connection line CLa and the second connection line CLb may be made of a transparent conductive material containing indium (In) such as indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO). However, the present application is not limited thereto.

[0092] In addition, in the process of manufacturing the display device 100, the step of forming the first connection line CLa and the second connection line CLb may be performed after the step of forming the connection electrode CE, the first anode 121a and the second anode 121b. Therefore, the first connection line CLa and the second connection line CLb may be disposed on the connection electrode CE, the first anode 121a and the second anode 121b in a crystallized state.

[0093] For example, the step of forming the connection electrode CE, the first anode 121a and the second anode 121b may include: a step of patterning the materials constituting the connection electrode CE, the first anode 121a and the second anode 121b; and a step of crystallizing the connection electrode CE, the first anode 121a and the second anode 121b by heat treatment. In addition, the step of forming the first connection line CLa and the second connection line CLb may be performed in the step of crystallizing the connection electrode CE, the first anode 121a and the second anode 121b. Therefore, since the connection electrode CE, the first anode 121a and the second anode 121b are in a crystallized state, even if the step of setting the first connection line CLa and the second connection line CLb on the connection electrode CE, the first anode 121a and the second anode 121b uses wet etching, damage caused by etching materials, etc. will be minimized.

[0094] In addition, although not shown in the drawings, an encapsulation layer, an encapsulation substrate, and a plurality of color filters may be further disposed on the first light emitting element 120 a and the second light emitting element 120 b .

[0095] The encapsulation layer is disposed on the first light emitting element 120a and the second light emitting element 120b. The encapsulation layer may cover the first light emitting element 120a and the second light emitting element 120b and protect the first light emitting element 120a and the second light emitting element 120b from external moisture, oxygen, impact, etc. The encapsulation layer may be formed by alternately stacking a plurality of inorganic layers and a plurality of organic layers. For example, the inorganic layer may be made of an inorganic material such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (AlOx). The organic layer may be made of an epoxy polymer or an acrylic polymer. However, the present application is not limited thereto.

[0096] The encapsulation substrate is disposed on the encapsulation layer. The encapsulation substrate can protect the first light-emitting element 120a and the second light-emitting element 120b from external moisture, oxygen, impact, etc. together with the encapsulation layer. For example, the encapsulation substrate can be made of a transparent insulating material. However, the encapsulation substrate can be made of a metal material. However, the present application is not limited thereto.

[0097] A plurality of color filters may be disposed on the first light emitting element 120a and the second light emitting element 120b. For example, a plurality of color filters may be disposed between the encapsulation layer and the encapsulation substrate. However, the present application is not limited thereto.

[0098] The plurality of color filters may include a red filter, a green filter, a blue filter, and the like. For example, a red filter may be disposed in the light emitting region of the first sub-pixel and convert the white light emitted from the first sub-pixel into red light. A blue filter may be disposed in the light emitting region of the third sub-pixel and convert the white light emitted from the third sub-pixel into blue light. A green filter may be disposed in the light emitting region of the fourth sub-pixel and convert the white light emitted from the fourth sub-pixel into green light. In addition, a separate color filter may not be disposed on the second sub-pixel as a white sub-pixel. The white light emitted from the light emitting element of the second sub-pixel may propagate to the outside of the display device 100 as is and display a white image.

[0099] In the following, reference will be made to Figures 3A to 5B A method of repairing a sub-pixel SP provided with a defective light emitting element in a display device according to an embodiment of the present application is described in more detail.

[0100] Figure 3A is an enlarged top plan view of a sub-pixel in which a first light-emitting element is defective in a display device according to an embodiment of the present application. Figure 3B According to an embodiment of the present application Figure 3A A cross-sectional view taken along line BB'. Figure 3C yes Figure 3B Magnified view of area C in FIG. Figure 4A is an enlarged top plan view of a sub-pixel in which the second light-emitting element is defective in a display device according to an embodiment of the present application. Figure 4B According to an embodiment of the present application Figure 4A A cross-sectional view taken along line D-D'. Figure 5A 1 is an enlarged top plan view of a sub-pixel in which both the first light-emitting element and the second light-emitting element are defective in a display device according to an embodiment of the present application. Figure 5B According to an embodiment of the present application Figure 5A A cross-sectional view taken along line EE'.

[0101] For example, during the process of manufacturing the display device, a short circuit (AC short circuit) may occur between the anode and the cathode of the light-emitting element due to foreign matter remaining between the anode and the cathode, and thus a dark spot defect in which current is not applied to the light-emitting element or a bright spot defect in which the light-emitting element continuously emits light may occur. Therefore, the display device can be repaired by electrically disconnecting a light-emitting element having a bright spot defect or a dark spot defect among a plurality of light-emitting elements connected to one transistor from the transistor, so that the bright spot defect or the dark spot defect of the defective light-emitting element in the final product is not visible.

[0102] Reference Figures 3A to 5B, in the display device 100 according to this embodiment of the present application, the connection electrode CE of the sub-pixel SP having a bright point defect or a dark point defect includes a first resistance portion CE1 and a second resistance portion CE2.

[0103] The first resistance portion CE1 is the portion of the connection electrode CE that has not undergone the laser irradiation process for repair. Like the connection electrode CE of a normal sub-pixel SP, the entire region of the first resistance portion CE1 can have conductivity.

[0104] The second resistance portion CE2 is the portion of the connection electrode CE that has undergone the laser irradiation process for repair. The second resistance portion CE2 is the portion of the connection electrode CE that contacts at least one of the first connection line CLa and the second connection line CLb. Therefore, the second resistance portion CE2 can be configured to selectively electrically disconnect the portion in contact with the first connection line CLa and the second connection line CLb.

[0105] Referring to Figure 3C , the thickness of the first resistance portion CE1 is the first thickness d1, the thickness of the second resistance portion CE2 is the second thickness d2, and the second thickness d2 can be greater than the first thickness d1. For example, it can be formed by a process in which the temperature of the connection electrode CE rises due to a laser beam and the distance between indium (In) particles contained in the connection electrode CE increases, and the volume of the corresponding portion also increases. For example, the thickness of the second resistance portion CE2 can increase by about 10% to 20% compared to the state before laser irradiation. However, the present application is not limited thereto.

[0106] In this case, in the second resistance portion CE2 where the distance between indium (In) particles increases, the movement of current decreases, so that the second resistance portion CE2 can have a resistance value larger than that of the first resistance portion CE1. Therefore, in the connection electrode CE, the second resistance portion CE2 can be configured to substantially electrically disconnect the transistor T from at least one of the first light-emitting element 120a and the second light-emitting element 120b.

[0107] In addition, since the second resistance portion CE2 in the connection electrode CE is the portion where the distance between indium (In) particles increases due to laser irradiation, the indium (In) density of the second resistance portion CE2 can be lower than the indium (In) density of the first resistance portion CE1. That is, the indium (In) density of the first resistance portion CE1 can be higher than the indium (In) density of the second resistance portion CE2.

[0108] Referring to Figures 3A to 5B , in the display device 100 according to this embodiment of the present application, the plurality of connection lines CLa and CLb of the sub-pixel SP having a bright point defect or a dark point defect include a low-resistance portion CLa1, CLb1 and a high-resistance portion CLa2, CLb2.

[0109] The low-resistance portions CLa1 and CLb1 are the portions of the first connection line CLa and the second connection line CLb of the sub-pixels SP having bright or dark point defects that have not undergone the laser irradiation process for repair. Similar to the first connection line CLa and the second connection line CLb of normal sub-pixels SP, the low-resistance portions CLa1 and CLb1 are fully conductive portions.

[0110] The high-resistance portions CLa2 and CLb2 are the portions of the first connection line CLa and the second connection line CLb that have undergone the laser irradiation process for repair. In the case where at least one of the first light-emitting element 120a and the second light-emitting element 120b is defective, at least one of the first connection line CLa and the second connection line CLb may include the high-resistance portions CLa2 and CLb2. The high-resistance portions CLa2 and CLb2 are provided on the portions of the first connection line CLa and the second connection line CLb that are in contact with the top surface of the connection electrode CE. For example, the high-resistance portions CLa2 and CLb2 can be formed by a process of irradiating a laser beam on the contact hole portions formed in the passivation layer 113 and the planarization layer 114 for electrically connecting the first connection line CLa, the second connection line CLb, and the connection electrode CE.

[0111] The high-resistance portions CLa2 and CLb2 can be formed by a process in which the temperature of the first connection line CLa and the second connection line CLb increases due to the laser beam, and a diffusion phenomenon occurs in which the distance between indium (In) particles contained in the first connection line CLa and the second connection line CLb increases, and the volume of the corresponding portions also increases. For example, the thickness of the high-resistance portions CLa2 and CLb2 can increase by about 10% to 20% compared to the state before laser irradiation. However, the present application is not limited thereto.

[0112] In addition, the thickness of each of the high-resistance portions CLa2 and CLb2 can be greater than the thickness of each of the low-resistance portions CLa1 and CLb1. For example, as Figure 3C shown, the thickness of each of the high-resistance portions CLa2 and CLb2 is the fourth thickness d4, and the thickness of each of the low-resistance portions CLa1 and CLb1 is d3, and the fourth thickness can be greater than the third thickness d3. However, the present application is not limited thereto.

[0113] In this case, in the high-resistance portions CLa2 and CLb2 where the distance between indium (In) particles increases, the movement of current decreases, so that the high-resistance portions CLa2 and CLb2 can have a higher resistance than the low-resistance portions CLa1 and CLb1. Therefore, the connection lines CLa and CLb provided with the high-resistance portions CLa2 and CLb2 can be configured to substantially electrically disconnect the plurality of light-emitting elements 120a, 120b, and the transistor T.

[0114] In addition, since the high-resistance portions CLa2 and CLb2 are portions where the distance between indium (In) particles increases due to laser irradiation, the indium (In) density of the high-resistance portions CLa2 and CLb2 can be lower than the indium (In) density of the low-resistance portions CLa1 and CLb1. That is to say, the indium (In) density of the low-resistance portions CLa1 and CLb1 can be higher than the indium (In) density of the high-resistance portions CLa2 and CLb2.

[0115] Refer to Figure 3B 、 Figure 3C 、 Figure 4B and Figure 5B , the second resistance portion CE2 and the high-resistance portions CLa2 and CLb2 are arranged to overlap each other. That is to say, the second resistance portion CE2 and the high-resistance portions CLa2 and CLb2 can be formed simultaneously by the same laser irradiation process. Therefore, the connection electrode CE provided with the second resistance portion CE2 and the connection lines CLa and CLb provided with the high-resistance portions CLa2 and CLb2 are basically electrically disconnected, which can improve the reliability of laser repair.

[0116] For example, the process of forming the second resistance portion CE2 and the high-resistance portions CLa2 and CLb2 may include: a process of irradiating a laser beam on a contact hole portion that electrically connects the connection lines CLa and CLb and the connection electrode CE connected to the defective light-emitting element below the substrate 110. In this case, since the connection electrode CE, the first connection line CLa, and the second connection line CLb are all made of a transparent material, the connection lines CLa and CLb provided on the connection electrode CE can also be irradiated with the laser beam. Therefore, the second resistance portion CE2 and the high-resistance portions CLa2 and CLb2 can be formed simultaneously by the same laser irradiation process.

[0117] In addition, for example, as the laser for the process of forming the second resistance portion CE2 and the high-resistance portions CLa2 and CLb2, a short-wavelength laser with a wavelength value of 266 nm can be used. In this case, in the case of a short-wavelength laser with a wavelength value of 266 nm, indium gallium zinc oxide (IGZO) has an absorption rate of 43%, and indium zinc oxide (IZO) has an absorption rate of 99%. That is to say, since indium gallium zinc oxide (IGZO) and indium zinc oxide (IZO) have absorption characteristics for a short-wavelength laser with a wavelength value of 266 nm, indium gallium zinc oxide (IGZO) and indium zinc oxide (IZO) can be used as the materials for the connection lines CLa and CLb and the connection electrode CE for forming the second resistance portion CE2 and the high-resistance portions CLa2 and CLb2 during laser irradiation. However, the present application is not limited thereto.

[0118] Hereinafter, the repair method of the sub-pixel SP where defects occur in various cases will be described in more detail.

[0119] First, referring to Figures 3A to 3C , when a bright point defect or a dark point defect occurs in the first light-emitting element 120a, the contact hole portion where the first connection line CLa is connected to the connection electrode CE is irradiated with a laser beam. In addition, the distance between indium (In) particles contained in the first connection line CLa and the connection electrode CE increases due to laser irradiation, and the movement of current decreases, so that a high-resistance portion CLa2 and a second resistance portion CE2, that is, a portion where the resistance value increases, are formed. That is, the first connection line CLa has a high-resistance portion CLa2, and the connection electrode CE has a second resistance portion CE2 that contacts the high-resistance portion CLa2. Therefore, since the defective first light-emitting element 120a is electrically disconnected from the transistor T through the high-resistance portion CLa2 and the second resistance portion CE2, the defect occurring in the first light-emitting element 120a in the sub-pixel SP can be made invisible, and the sub-pixel SP can be repaired.

[0120] Next, referring to Figure 4A and Figure 4B , when a bright point defect or a dark point defect occurs in the second light-emitting element 120b, the contact hole portion where the second connection line CLb is connected to the connection electrode CE is irradiated with a laser beam. In addition, the distance between indium (In) particles contained in the second connection line CLb and the connection electrode CE increases due to laser irradiation, and the movement of current decreases, so that a high-resistance portion CLb2 and a second resistance portion CE2, that is, a portion where the resistance value increases, are formed. That is, the second connection line CLb has a high-resistance portion CLb2, and the connection electrode CE has a second resistance portion CE2 that contacts the high-resistance portion CLb2. Therefore, since the defective second light-emitting element 120b is electrically disconnected from the transistor T through the high-resistance portion CLb2 and the second resistance portion CE2, the defect occurring in the second light-emitting element 120b in the sub-pixel SP can be made invisible, and the sub-pixel SP can be repaired.

[0121] Finally, referring to Figure 5A and Figure 5B, when bright spot defects or dark spot defects occur in both the first light-emitting element 120a and the second light-emitting element 120b, the contact hole portions where the first connection line CLa is connected to the connection electrode CE and the contact hole portions where the second connection line CLb is connected to the connection electrode CE are irradiated with a laser beam. In addition, the distance between indium (In) particles contained in the first connection line CLa, the second connection line CLb, and the connection electrode CE increases due to laser irradiation, and the movement of current decreases, so that high-resistance portions CLa2, CLb2, and a plurality of second resistance portions CE2, that is, portions with increased resistance values, are formed. That is, the first connection line CLa and the second connection line CLb respectively have high-resistance portions CLa2, CLb2, and the connection electrode CE has a plurality of second resistance portions CE2 in contact with the high-resistance portions CLa2, CLb2. Therefore, since the defective first light-emitting element 120a and second light-emitting element 120b are electrically disconnected from the transistor T through the high-resistance portions CLa2, CLb2, and the plurality of second resistance portions CE2, the defects occurring in the first light-emitting element 120a and the second light-emitting element 120b in the sub-pixel SP may not be seen, and the sub-pixel SP can be repaired.

[0122] In a display device configured such that a plurality of light-emitting regions are provided in one sub-pixel to repair bright spot defects or dark spot defects, the bright spot defects or dark spot defects can be repaired by a process of selectively separating the line or electrode that electrically connects the plurality of light-emitting regions and the transistor connected to the plurality of light-emitting regions. In this case, for example, the method of electrically disconnecting the plurality of light-emitting regions and the transistor can be performed by physically removing the line or electrode by emitting a laser beam.

[0123] However, in the case of physically removing the line or electrode to repair the bright spot defects or dark spot defects of the sub-pixel, the layout structure between the surrounding constituent elements is deformed due to the volume of the removed line or electrode, which may cause a problem of deterioration in the reliability of the display device. In addition, the problem of bright spot defects or dark spot defects of the sub-pixel and the deformation of the layout structure that additionally occurs during the repair process may become more serious in a top-emission type display device in which a larger number of constituent elements are provided above the light-emitting elements in the plurality of light-emitting regions.

[0124] In addition, in the case of providing an additional repair portion to repair the bright spot defects or dark spot defects of the sub-pixel, an additional problem occurs in which the area where the light-emitting region is provided is reduced due to the layout of the repair portion.

[0125] Therefore, in the display device 100 according to an embodiment of the present application, the first connection line CLa and the second connection line CLb are provided to connect the connection electrode CE, the first anode 121a, and the second anode 121b, and high resistance portions CLa2, CLb2, and a second resistance portion CE2 are provided on the connection lines CLa, CLb, and the connection electrode CE of the sub-pixel SP in which the defective light-emitting element is provided, which can minimize the deterioration of the reliability of the display device 100 occurring during the repair process.

[0126] Specifically, in the display device 100 according to an embodiment of the present application, the first connection line CLa is provided to extend from an end of the first anode 121a to the connection electrode CE, and the second connection line CLb is provided to extend from an end of the second anode 121b to the connection electrode CE. Therefore, the first connection line CLa and the second connection line CLb can electrically connect the first light-emitting element 120a and the second light-emitting element 120b to one transistor T. Therefore, each of the first connection line CLa and the second connection line CLb can be used as a repair portion for repairing the sub-pixel SP in which the light-emitting element having a dark spot defect or a brightness defect is provided by selectively electrically disconnecting the first light-emitting element 120a, the second light-emitting element 120b, and the transistor T. In addition, in the case where at least one of the first light-emitting element 120a and the second light-emitting element 120b is defective, the connection lines CLa, CLb connected to the defective light-emitting element may include high resistance portions CLa2, CLb2. In this case, since the high resistance portions CLa2, CLb2 increase the distance between indium (In) particles and reduce the movement of current, the connection lines CLa, CLb provided with the high resistance portions CLa2, CLb2 can be configured to substantially electrically disconnect the defective light-emitting element and the transistor T. That is, the first connection line CLa and the second connection line CLb of the display device 100 according to an embodiment of the present application can be configured to substantially electrically disconnect the defective light-emitting element and the transistor T even without being physically removed. Therefore, the problem of deformation of the layout structure of the surrounding constituent elements occurring during the repair process of electrically disconnecting the transistor T and the defective light-emitting element when the connection lines CLa, CLb are physically removed can be minimized. Therefore, in the display device 100 according to an embodiment of the present application, the first connection line CLa and the second connection line CLb are provided to connect the connection electrode CE, the first anode 121a, and the second anode 121b, and the high resistance portions CLa2, CLb2 are provided on the connection lines CLa, CLb of the sub-pixel SP in which the defective light-emitting element is provided, which can minimize the deterioration of the reliability of the display device 100 occurring during the repair process.

[0127] In addition, in the display device 100 according to an embodiment of the present application, the contact hole portions where the plurality of connection lines CLa, CLb are connected to the connection electrode CE are used as repair points without adding a separate repair structure, which can minimize the reduction of the light-emitting area.

[0128] Specifically, in the display device 100 according to an embodiment of the present application, the connection electrode CE, the first connection line CLa, and the second connection line CLb are all made of a transparent material. Therefore, for example, the connection lines CLa, CLb disposed on the connection electrode CE can also be irradiated with a laser beam through a process of irradiating a laser beam from below the substrate 110. Therefore, the second resistance portion CE2 and the high-resistance portions CLa2, CLb2 can be formed simultaneously through the same laser irradiation process. Therefore, since the contact hole portions where the plurality of connection lines CLa, CLb are connected to the connection electrode CE can be electrically disconnected, the contact hole portions where the plurality of connection lines CLa, CLb are connected to the connection electrode CE can be used as repair points for repairing sub-pixels having bright point defects or dark point defects even without adding a separate repair point. Therefore, in the display device 100 according to an embodiment of the present application, the contact hole portions where the plurality of connection lines CLa, CLb are connected to the connection electrode CE are used as repair points without adding a separate repair structure, which can minimize or at least reduce the reduction of the light-emitting area and provide a high-quality display device in which the aperture ratio of the light-emitting area is increased.

[0129] Hereinafter, reference will be made to Figures 6A to 6C a sub-pixel in which a plurality of light-emitting elements are all normal in a display device according to another embodiment of the present application will be described in detail.

[0130] Figure 6A and Figure 6B are enlarged top plan views of a sub-pixel in which a first light-emitting element and a second light-emitting element are both normal in a display device according to another embodiment of the present application. Figure 6C is a cross-sectional view taken along the line F-F' in Figure 6B in accordance with an embodiment of the present application. For ease of explanation, Figure 6A only the first anode 121a, the second anode 121b, the connection electrode CE, the first connection line CLa, the second connection line CLb, the protrusion PP, and the bank 615 among the components of the display device 600 are illustrated. For ease of description, Figure 6B is a view showing the bank 615 not shown in Figure 6A . Figures 6A to 6C The display device 600 in Figures 1 to 5B is substantially the same in structure as the display device 100 in

[0131] ReferenceFigures 6A to 6C In each sub-pixel SP of the display device 600 according to another embodiment of the present application, a protrusion PP is provided between the first light-emitting region EA1 and the second light-emitting region EA2. The protrusion PP is provided in a region where the first connection line CLa and the second connection line CLb are separated from each other. The protrusion PP is provided to be separated from the first connection line CLa and the second connection line CLb.

[0132] The protrusion PP may include multiple layers. For example, the protrusion PP may include multiple layers containing the same materials as the insulating layer 112, the passivation layer 113, the planarization layer 114, the first connection line CLa, and the second connection line CLb. For example, the protrusion PP may be formed simultaneously by the processes for forming the insulating layer 112, the passivation layer 113, the planarization layer 114, the first connection line CLa, and the second connection line CLb. However, the present application is not limited thereto.

[0133] In addition, referring to Figure 6C the protrusion PP is provided in an undercut shape. In addition, the end portions of the first connection line CLa and the end portions of the second connection line CLb are provided in the lower region of the undercut shape of the protrusion PP. In the lower region of the undercut shape of the protrusion PP, the end portions of the first connection line CLa and the end portions of the second connection line CLb may be provided on the connection electrode CE and electrically connected to the connection electrode CE.

[0134] Referring to Figure 6C the end portions of the first connection line CLa and the end portions of the second connection line CLb are provided in a shape in which the thickness decreases toward the end. For example, during the process of forming the protrusion PP, the first connection line CLa, and the second connection line CLb, the protrusion PP may be configured to separate the first connection line CLa and the second connection line CLb through the undercut shape. Therefore, the end portions of the first connection line CLa and the end portions of the second connection line CLb separated by the undercut shape of the protrusion PP may be provided in a shape with a smaller thickness compared to the portions that do not contact the connection electrode CE.

[0135] In addition, Figures 6A to 6C illustrates a normal sub-pixel SP without defects and not subjected to a repair process. In this case, when both the first light-emitting element 120a and the second light-emitting element 120b provided in the sub-pixel SP are normal, the repair process is not performed on the first connection line CLa and the second connection line CLb provided in the sub-pixel SP, so that both the first connection line CLa and the second connection line CLb can be conductive.

[0136] Hereinafter, a method for repairing a sub-pixel provided with a defective light-emitting element in a display device according to another embodiment of the present application will be described in detail with reference to Figures 7A to 9B

[0137] ​Figure 7A is an enlarged plan view from above of a sub-pixel in which a first light-emitting element is defective in a display device according to another embodiment of the present application. Figure 7B is along according to an embodiment of the present application Figure 7A The cross-sectional view taken along line G-G' in Figure 7C is according to an embodiment of the present application Figure 7B The enlarged view of region H in Figure 8A is an enlarged plan view from above of a sub-pixel in which a second light-emitting element is defective in a display device according to another embodiment of the present application. Figure 8B is along according to an embodiment of the present application Figure 8A The cross-sectional view taken along line I-I' in Figure 9A is an enlarged plan view from above of a sub-pixel in which a first light-emitting element and a second light-emitting element are defective in a display device according to another embodiment of the present application. Figure 9B is along according to an embodiment of the present application Figure 9A The cross-sectional view taken along line J-J' in Figures 7A to 9B The display device 600 in Figures 1 to 5B is substantially the same in structure as the display device 100 in

[0138] Refer to Figures 7A to 9B , in the display device 600 according to another embodiment of the present application, the connection electrode CE of the sub-pixel SP having a bright point defect or a dark point defect includes a first resistance portion CE1 and a second resistance portion CE2, and the connection lines CLa and CLb of the sub-pixel SP having a bright point defect or a dark point defect include a low-resistance portion CLa1, CLb1 and a high-resistance portion CLa2, CLb2.

[0139] Refer to Figure 7C , the ends of the first connection line CLa and the ends of the second connection line CLb are arranged in a shape in which the thickness decreases toward the ends. Since the ends of the first connection line CLa and the ends of the second connection line CLb provided on the connection electrode CE are arranged in a shape with a smaller thickness compared to the portions not in contact with the connection electrode CE, indium (In) particles are more sensitive to the laser beam. Therefore, the ends of the first connection line CLa and the ends of the second connection line CLb provided on the connection electrode CE are arranged in a shape in which the thickness decreases toward the ends, so that the ends of the first connection line CLa and the ends of the second connection line CLb can be configured to more easily electrically disconnect the plurality of light-emitting elements 120a, 120b and the transistor T.

[0140] Hereinafter, the repair method of the sub-pixel SP in which defects occur in various cases will be described in more detail.

[0141] First, referring to Figures 7A to 7C , when a bright point defect or a dark point defect occurs in the first light-emitting element 120a, the contact hole portion where the first connection line CLa is connected to the connection electrode CE is irradiated with a laser beam. In addition, the distance between indium (In) particles contained in the first connection line CLa and the connection electrode CE increases due to laser irradiation, and the movement of current decreases, so that a high-resistance portion CLa2 and a second resistance portion CE2, that is, a portion where the resistance value increases, are formed. That is, the first connection line CLa has a high-resistance portion CLa2, and the connection electrode CE has a second resistance portion CE2 in contact with the high-resistance portion CLa2. Therefore, since the defective first light-emitting element 120a is electrically disconnected from the transistor T through the high-resistance portion CLa2 and the second resistance portion CE2, the defect occurring in the first light-emitting element 120a in the sub-pixel SP can be made invisible, and the sub-pixel SP can be repaired.

[0142] Next, referring to Figure 8A and Figure 8B , when a bright point defect or a dark point defect occurs in the second light-emitting element 120b, the contact hole portion where the second connection line CLb is connected to the connection electrode CE is irradiated with a laser beam. In addition, the distance between indium (In) particles contained in the second connection line CLb and the connection electrode CE increases due to laser irradiation, and the movement of current decreases, so that a high-resistance portion CLb2 and a second resistance portion CE2, that is, a portion where the resistance value increases, are formed. That is, the second connection line CLb has a high-resistance portion CLb2, and the connection electrode CE has a second resistance portion CE2 in contact with the high-resistance portion CLb2. Therefore, the defective second light-emitting element 120b is electrically disconnected from the transistor T through the high-resistance portion CLb2 and the second resistance portion CE2, so that the defect occurring in the second light-emitting element 120b in the sub-pixel SP can be made invisible, and the sub-pixel SP can be repaired.

[0143] Finally, referring to Figure 9A and Figure 9B, in the case where bright spot defects or dark spot defects occur in both the first light-emitting element 120a and the second light-emitting element 120b, the contact hole portions where the first connection line CLa is connected to the connection electrode CE and the contact hole portions where the second connection line CLb is connected to the connection electrode CE are irradiated with a laser beam. In addition, the distance between indium (In) particles included in the first connection line CLa, the second connection line CLb, and the connection electrode CE increases due to laser irradiation, and the movement of current decreases, so that high-resistance portions CLa2, CLb2, and a plurality of second resistance portions CE2, that is, portions with increased resistance values, are formed. That is, the first connection line CLa and the second connection line CLb have high-resistance portions CLa2, CLb2, and the connection electrode CE has a plurality of second resistance portions CE2 in contact with the high-resistance portions CLa2, CLb2. Therefore, since the defective first light-emitting element 120a and the second light-emitting element 120b are electrically disconnected from the transistor T through the high-resistance portions CLa2, CLb2, and the plurality of second resistance portions CE2, the defects occurring in the first light-emitting element 120a and the second light-emitting element 120b in the sub-pixel SP can be made invisible, and the sub-pixel SP can be repaired.

[0144] In the display device 600 according to another embodiment of the present application, the first connection line CLa and the second connection line CLb are provided to connect the connection electrode CE, the first anode 121a, and the second anode 121b, and the high-resistance portions CLa2, CLb2, and the second resistance portions CE2 are provided on the connection lines CLa, CLb, and the connection electrode CE of the sub-pixel SP in which a defective light-emitting element is provided, which can minimize the deterioration of the reliability of the display device 600 occurring during the repair process.

[0145] Specifically, in the display device 600 according to another embodiment of the present application, the first connection line CLa is arranged to extend from the end of the first anode 121a to the connection electrode CE, and the second connection line CLb is arranged to extend from the end of the second anode 121b to the connection electrode CE. Therefore, the first connection line CLa and the second connection line CLb can electrically connect the first light-emitting element 120a and the second light-emitting element 120b to one transistor T. Accordingly, each of the first connection line CLa and the second connection line CLb can be used as a repair unit for repairing the sub-pixel SP in which a light-emitting element having a dark spot defect or a brightness defect is provided by selectively electrically disconnecting the first light-emitting element 120a, the second light-emitting element 120b, and the transistor T. In addition, in the case where at least one of the first light-emitting element 120a and the second light-emitting element 120b is defective, the connection lines CLa and CLb connected to the defective light-emitting element may include high-resistance portions CLa2 and CLb2. In this case, since the high-resistance portions CLa2 and CLb2 increase the distance between indium (In) particles and reduce the movement of current, the connection lines CLa and CLb provided with the high-resistance portions CLa2 and CLb2 can be configured to substantially electrically disconnect the defective light-emitting element and the transistor T. That is, the first connection line CLa and the second connection line CLb of the display device 600 according to another embodiment of the present application can be configured to substantially electrically disconnect the defective light-emitting element and the transistor T even without being physically removed. Therefore, the problem of deformation of the layout structure of surrounding components that occurs when the connection lines CLa and CLb are physically removed during the repair process of electrically disconnecting the transistor T and the defective light-emitting element can be minimized or at least reduced. Accordingly, in the display device 600 according to another embodiment of the present application, the first connection line CLa and the second connection line CLb are provided to connect the connection electrode CE, the first anode 121a, and the second anode 121b, and the high-resistance portions CLa2 and CLb2 are provided on the connection lines CLa and CLb of the sub-pixel SP in which the defective light-emitting element is provided, which can minimize or at least reduce the deterioration of the reliability of the display device 600 that occurs during the repair process.

[0146] In addition, in the display device 600 according to another embodiment of the present application, the contact hole portions where the plurality of connection lines CLa and CLb are in contact with the connection electrode CE are used as repair points without adding a separate structure for repair, which can minimize or at least reduce the reduction of the light-emitting area.

[0147] Specifically, in a display device 600 according to another embodiment of the present application, the connection electrode CE, the first connection line CLa, and the second connection line CLb are all made of a transparent material. Thus, for example, the connection lines CLa and CLb provided on the connection electrode CE can also be irradiated with a laser beam through a process of irradiating a laser beam from below the substrate 110. Thus, the second resistance portion CE2 and the high-resistance portions CLa2 and CLb2 can be formed simultaneously through the same laser irradiation process. Thus, since the contact hole portions connecting the plurality of connection lines CLa and CLb to the connection electrode CE can be electrically disconnected, the contact hole portions connecting the plurality of connection lines CLa and CLb to the connection electrode CE can be used as repair points for repairing sub-pixels having bright point defects or dark point defects even without adding separate repair points. Thus, in a display device 600 according to another embodiment of the present application, the contact hole portions connecting the plurality of connection lines CLa and CLb to the connection electrode CE are used as repair points without adding a separate structure for repair, which can minimize the reduction of the light-emitting area and provide a high-quality display device in which the aperture ratio of the light-emitting area is increased.

[0148] Exemplary embodiments of the present disclosure may also be described as follows:

[0149] According to one aspect of the present disclosure, a display device may include: a substrate; a transistor provided on the substrate; a connection electrode electrically connected to a source electrode or a drain electrode of the transistor; a planarization layer provided on the transistor and the connection electrode; a plurality of light-emitting elements provided on the planarization layer; and a plurality of connection lines configured to be in contact with the connection electrode and the plurality of light-emitting elements, wherein the plurality of light-emitting elements include a first light-emitting element and a second light-emitting element, and wherein the plurality of connection lines are made of a conductive oxide, are provided between the first light-emitting element and the second light-emitting element, and are configured to cover an end portion of an anode of the first light-emitting element and an end portion of an anode of the second light-emitting element.

[0150] Each of the plurality of connection lines may be in contact with a top surface of the connection electrode through a contact hole formed in the planarization layer.

[0151] The plurality of connection lines may include: a first connection line electrically connected to the first light-emitting element; and a second connection line electrically connected to the second light-emitting element.

[0152] The first connection line and the second connection line may be separated from each other.

[0153] The first connection line and the second connection line may be in contact with one connection electrode.

[0154] The display device may further include: a protrusion provided in an area where the first connection line and the second connection line are separated from each other.

[0155] The end of the first connection line and the end of the second connection line may be provided on the connection electrode.

[0156] On the connection electrode, each of the end of the first connection line and the end of the second connection line may have a shape in which the thickness decreases toward its end.

[0157] The connection electrode may be provided on the same layer as the active layer of the transistor.

[0158] The connection electrode may include a transparent oxide semiconductor material and may be configured to have conductivity.

[0159] The connection electrode contains indium (In).

[0160] The plurality of connection lines contain indium (In).

[0161] The conductive oxide may be a transparent conductive oxide.

[0162] According to an aspect of the present disclosure, a display device may include: a substrate on which a plurality of sub-pixels are provided; a transistor provided in each of the plurality of sub-pixels provided on the substrate; a connection electrode electrically connected to a source electrode or a drain electrode of the transistor; a planarization layer provided on the transistor and the connection electrode; a first light-emitting element and a second light-emitting element provided on the planarization layer in one sub-pixel; and a plurality of connection lines configured to electrically connect the first light-emitting element, the second light-emitting element, and the connection electrode, wherein the plurality of connection lines are made of a conductive oxide and are configured to cover ends of an anode of the first light-emitting element and an anode of the second light-emitting element provided in the one sub-pixel, and at least one of the plurality of connection lines includes a low-resistance portion and a high-resistance portion having a resistance value higher than that of the low-resistance portion.

[0163] Each of the plurality of connection lines may be in contact with a top surface of the connection electrode through a contact hole formed in the planarization layer.

[0164] The high-resistance portion may be in contact with the top surface of the connection electrode.

[0165] The thickness of the high-resistance portion may be greater than the thickness of the low-resistance portion.

[0166] The plurality of connection lines may contain indium (In).

[0167] The indium (In) density of the low-resistance portion may be higher than the indium density of the high-resistance portion.

[0168] The connection electrode may include: a first resistance portion; and a second resistance portion having a resistance value higher than that of the first resistance portion and in contact with the high-resistance portion.

[0169] The connection electrode may contain indium (In).

[0170] The indium (In) density of the first resistance portion may be higher than that of the second resistance portion.

[0171] The plurality of connection lines may include: a first connection line electrically connected to the first light-emitting element; and a second connection line electrically connected to the second light-emitting element.

[0172] The first connection line and the second connection line may be separated from each other.

[0173] The first connection line and the second connection line may be in contact with one connection electrode.

[0174] The display device may further include: a protrusion provided in a region where the first connection line and the second connection line are separated from each other.

[0175] The end of the first connection line and the end of the second connection line may be provided on the connection electrode.

[0176] On the connection electrode, each of the end of the first connection line and the end of the second connection line may have a shape in which the thickness decreases toward its end.

[0177] The connection electrode may be provided on the same layer as the active layer of the transistor.

[0178] The connection electrode may include a transparent oxide semiconductor material and may be configured to have conductivity.

[0179] The conductive oxide may be a transparent conductive oxide.

[0180] Although the exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto, and the present disclosure can be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all respects and do not limit the present disclosure. The protection scope of the present disclosure should be interpreted based on the following claims, and all technical concepts within the equivalent scope should be interpreted as falling within the scope of the present disclosure.

Claims

1. A display device, comprising: substrate; a transistor on the substrate; a connection electrode electrically connected to a source electrode or a drain electrode of the transistor; a planarization layer on the transistor and the connection electrode; a plurality of light emitting elements on the planarization layer; and a plurality of connection lines connected to the connection electrodes and the plurality of light emitting elements, wherein the plurality of light emitting elements include a first light emitting element and a second light emitting element, and The plurality of connection wires include a conductive oxide, are disposed between the first light emitting element and the second light emitting element, and cover an end of an anode of the first light emitting element and an end of an anode of the second light emitting element. 2 . The display device according to claim 1 , wherein each of the plurality of connection lines contacts a top surface of the connection electrode through a contact hole in the planarization layer.

3. The display device according to claim 1, wherein the plurality of connection lines comprises: a first connecting line electrically connected to the first light emitting element; and A second connection line electrically connected to the second light emitting element, and The first connecting line and the second connecting line are separated from each other. 4 . The display device according to claim 3 , wherein the first connection line and the second connection line are in contact with the connection electrode.

5. The display device according to claim 3, further comprising: a protrusion in a region where the first connection line and the second connection line are separated from each other, The end of the first connecting line and the end of the second connecting line are on the connecting electrode. 6 . The display device according to claim 5 , wherein on the connection electrode, each of the end portion of the first connection line and the end portion of the second connection line has a shape whose thickness decreases toward a distal end thereof. 7 . The display device according to claim 1 , wherein the connection electrode is on the same layer as an active layer of the transistor. 8 . The display device according to claim 7 , wherein the connection electrode comprises a transparent oxide semiconductor material and is conductive.

9. The display device according to claim 8, wherein the connection electrode comprises indium.

10. The display device according to claim 1, wherein the plurality of connection lines comprise indium. The display device according to claim 1 , wherein the conductive oxide is a transparent conductive oxide.

12. A display device, comprising: a substrate having a plurality of sub-pixels disposed thereon; a transistor disposed in each of the plurality of sub-pixels on the substrate; a connection electrode electrically connected to a source electrode or a drain electrode of the transistor; a planarization layer on the transistor and the connection electrode; a first light emitting element and a second light emitting element on the planarization layer in one sub-pixel; as well as a plurality of connection wires electrically connecting the first light emitting element, the second light emitting element and the connection electrode, wherein the plurality of connection lines include a conductive oxide and cover an end of an anode of the first light emitting element and an end of an anode of the second light emitting element provided in the one sub-pixel, and At least one of the plurality of connection lines includes a low resistance portion and a high resistance portion having a higher resistance value than the low resistance portion. 13 . The display device according to claim 12 , wherein each of the plurality of connection lines contacts a top surface of the connection electrode through a contact hole in the planarization layer. 14 . The display device according to claim 12 , wherein the high resistance portion is in contact with a top surface of the connection electrode. 15 . The display device according to claim 12 , wherein a thickness of the high resistance portion is greater than a thickness of the low resistance portion. The display device according to claim 12 , wherein the plurality of connection lines comprise indium. 17 . The display device according to claim 16 , wherein an indium density of the low resistance portion is higher than an indium density of the high resistance portion.

18. The display device according to claim 12, wherein the connecting electrode comprises: a first resistance portion; and A second resistance portion having a higher resistance value than the first resistance portion and in contact with the high resistance portion. The display device according to claim 18 , wherein the connection electrode comprises indium. 20 . The display device of claim 19 , wherein an indium density of the first resistance portion is higher than an indium density of the second resistance portion.

21. The display device according to claim 12, wherein the plurality of connection lines comprises: a first connecting line electrically connected to the first light emitting element; and A second connection line electrically connected to the second light emitting element, and The first connecting line and the second connecting line are separated from each other.

22. The display device according to claim 21, wherein the first connection line and the second connection line are in contact with one connection electrode.

23. The display device according to claim 21, further comprising: a protrusion in a region where the first connection line and the second connection line are separated from each other, The end of the first connecting line and the end of the second connecting line are on the connecting electrode. 24 . The display device according to claim 23 , wherein on the connection electrode, each of the end portion of the first connection line and the end portion of the second connection line has a shape whose thickness decreases toward a distal end thereof.

25. The display device according to claim 12, wherein the connection electrode is on the same layer as an active layer of the transistor. 26 . The display device according to claim 25 , wherein the connection electrode comprises a transparent oxide semiconductor material and is conductive.

27. The display device according to claim 12, wherein the conductive oxide is a transparent conductive oxide.

Images