Light-emitting device, preparation method and display device

Abstract

The invention discloses a light-emitting device, a preparation method and a display device. The preparation method of the light-emitting device comprises the steps that an alkali solution and a light-emitting device prefabricated body are provided, the light-emitting device prefabricated body comprises a first electrode, a light-emitting layer and a first carrier functional layer which are sequentially arranged in a stacked mode, and the first carrier functional layer comprises metal oxide or doped metal oxide; an alkali solution is arranged on the side, away from the first electrode, of the first carrier function layer; a second electrode is arranged on the side, away from the first electrode, of the first carrier function layer, and the light-emitting device is obtained. The first electrode, the first carrier functional layer, the second electrode and the first carrier functional layer are arranged, and the alkali solution is arranged on the first carrier functional layer, so that the preprocessed light-emitting device preform is obtained, and due to the fact that the alkali solution and the first carrier functional layer are subjected to alcoholysis treatment, the light-emitting efficiency is improved. The content of metal oxide or doped metal oxide in the first carrier function layer is improved, and the service life of the device is further prolonged.

Description

Technical Field

[0001] This application relates to the field of display technologies, and particularly to a method for manufacturing a light-emitting device, a light-emitting device obtained by the manufacturing method, and a display device including the light-emitting device. Background Art

[0002] Due to characteristics such as ultrathin, high color gamut, flexibility, and high contrast, QLEDs are widely used in the field of display technologies. A traditional QLED structure generally includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode.

[0003] However, the electron transport layer of existing light-emitting devices is generally a metal oxide or a doped metal oxide. However, when preparing a metal oxide or a doped metal oxide, there will be unreacted metal compound precursors or reaction intermediates. When using a metal oxide or a doped metal oxide, it will cause poor performance of the electron transport layer, and further affect the short lifespan of the light-emitting device. Summary of the Invention

[0004] In view of this, this application provides a method for manufacturing a thin film, aiming to improve the problem of the short lifespan of existing light-emitting devices.

[0005] The embodiments of this application are implemented as follows. A method for manufacturing a light-emitting device includes:

[0006] Providing an alkali solution and a light-emitting device preform, where the light-emitting device preform includes a first electrode, a light-emitting layer, and a first carrier function layer that are sequentially stacked, and the first carrier function layer contains a metal oxide or a doped metal oxide;

[0007] Setting the alkali solution on a side of the first carrier function layer away from the first electrode;

[0008] Setting a second electrode on a side of the first carrier function layer away from the first electrode to obtain a light-emitting device.

[0009] Optionally, the method further includes: setting an alkali solution on the first carrier function layer of the light-emitting device preform, and performing an alcohol solution treatment on the first carrier function layer.

[0010] Optionally, the alcohol solution includes one or more of a monohydric alcohol, a dihydric alcohol, and a trihydric alcohol; and / or

[0011] The alkali solution includes one or more of an organic base and an inorganic base.

[0012] Optionally, the monohydric alcohol includes one or more of ethanol, n-propanol, and isopropyl alcohol; and / or

[0013] The diol includes one or more of ethylene glycol, propylene glycol, butylene glycol, pentylene glycol, hexylene glycol, and octylene glycol; and / or

[0014] The triol includes one or more of glycerol, butanetriol, pentanetriol, hexanetriol, octanetriol, and guisanchun; and / or

[0015] The organic base includes one or more of amine compounds, alkali metal salts of alcohols, alkyllithiums, and quaternary ammonium salts; and / or

[0016] The inorganic base includes one or more of potassium hydroxide, sodium hydroxide, and lithium hydroxide.

[0017] Optionally, the time for setting the alkali solution on the first carrier functional layer of the light-emitting device preform is 1 to 30 s; and / or

[0018] The temperature for setting the alkali solution on the first carrier functional layer of the light-emitting device preform is 25 to 80 °C.

[0019] Optionally, the doped metal oxide includes magnesium-doped zinc oxide; and / or

[0020] The metal oxide includes zinc oxide.

[0021] Optionally, the preparation steps of the magnesium-doped zinc oxide include:

[0022] Pre-treat the magnesium precursor and zinc oxide to obtain magnesium-doped zinc oxide.

[0023] Optionally, the magnesium precursor includes one or more of magnesium acetate, magnesium chloride, and magnesium nitrate.

[0024] Optionally, the light-emitting device further includes a light-emitting layer located between the first electrode and the first carrier functional layer; and / or

[0025] The light-emitting device further includes a second carrier functional layer located between the second electrode and the light-emitting layer.

[0026] Correspondingly, an embodiment of the present application further provides a light-emitting device, which is prepared by the preparation method of the above light-emitting device.

[0027] Optionally, the materials of the first electrode and the second electrode are independently selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba; and / or

[0028] The materials of the light-emitting layer include one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine]iridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine]iridium, diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF materials, polymers containing B-N covalent bonds, HLCT materials, Exciplex light-emitting materials, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, CuInS2, CuInSe2, AgInS2, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, AMX3 and BMX3, where A is Cs+ an ion, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of the group consisting of; X is a halogen anion selected from Cl - , Br - , I - and one or more of the group consisting of; B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2; and / or

[0029] The second carrier functional layer includes a hole transport layer and / or a hole injection layer, and the materials of the hole transport layer and the hole injection layer are independently selected from one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, transition metal oxides, transition metal sulfides and transition metal stannides.

[0030] Correspondingly, an embodiment of the present application further provides a display device, and the display device includes the above-mentioned light-emitting device.

[0031] Compared with the prior art, the present application has the following advantages:

[0032] In this application, by providing a light-emitting device which includes a first electrode, a first charge carrier functional layer, and a second electrode, and the first charge carrier functional layer, and an alkali solution is disposed on the first charge carrier functional layer, a pre-treated light-emitting device preform is obtained. Since the alkali solution undergoes alcoholysis with the first charge carrier functional layer, the content of metal oxide or doped metal oxide in the first charge carrier functional layer is increased, thereby improving the service life of the device. Brief Description of the Drawings

[0033] To more clearly illustrate the technical solutions in the embodiments of this application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of this application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0034] Figure 1 is a flowchart of a method for manufacturing a light-emitting device provided by an embodiment of this application;

[0035] Figure 2 is a schematic diagram of the front structure of a light-emitting device provided by an embodiment of this application;

[0036] Figure 3 is a schematic diagram of the inverted structure of a light-emitting device provided by an embodiment of this application.

[0037] Reference Numerals:

[0038] Light-emitting device - 100, 10 - First electrode, 20 - First charge carrier functional layer, 30 - Second electrode, 40 - Light-emitting layer, 50 - Second charge carrier functional layer. Detailed Embodiments

[0039] The following will clearly and completely describe the technical solutions in the embodiments of this application with reference to the drawings in the embodiments of this application. Obviously, the described embodiments are only some embodiments of this application, rather than all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain this application, and are not used to limit this application.

[0040] In this application, unless otherwise stated, the orientation terms such as "upper" and "lower" usually refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the drawings; and "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0041] In this application, "and / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Where A and B can be singular or plural.

[0042] In this application, "at least one" means one or more, and "a plurality" means two or more. "At least one kind", "at least one of the following items (pieces)" or similar expressions refer to any combination of these items, including any combination of single items (pieces) or plural items (pieces). For example, "at least one of a, b, or c", or "at least one of a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0043] The various embodiments of this application can exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the description of the range has specifically disclosed all possible sub - ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub - ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within that range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0044] Currently, for the charge transport energy level of nano - oxide particles, other elements are usually doped to match the electron injection energy level of quantum dots. However, the addition of other elements will cause the electron transport layer to be unstable, resulting in performance changes during the operation of the device and ultimately affecting the overall lifespan of the device.

[0045] The technical solution of this application is as follows:

[0046] Please refer to Figure 1 , an embodiment of this application provides a method for preparing a thin film, including:

[0047] Step S11: Provide an alkali solution and a pre - fabricated light - emitting device, where the pre - fabricated light - emitting device includes a first electrode, a light - emitting layer, and a first carrier functional layer stacked in sequence, and the first carrier functional layer contains a metal oxide or a doped metal oxide;

[0048] Step S12: Set the alkali solution on the side of the first carrier functional layer away from the first electrode;

[0049] Step S13: A second electrode is disposed on a side of the first carrier functional layer away from the first electrode to obtain a light-emitting device.

[0050] In some embodiments, referring to Figure 2 and Figure 3 , the first electrode 10 is a cathode. Correspondingly, the first carrier functional layer 20 is an electron functional layer, and the second electrode 30 is an anode. It can be understood that the electron functional layer may include one or both of an electron injection layer and an electron transport layer. In other words, the electron functional layer may be an electron injection layer, or an electron transport layer, or a stacked electron injection layer and electron transport layer.

[0051] In some embodiments, since there are residual metal compound precursors (for example, unreacted metal oxides or reaction intermediates) in the metal oxides or doped metal oxides in the first carrier functional layer 20 during the preparation process, the residual metal compound precursors are subjected to alcoholysis treatment with an alkali solution to generate doped metal oxides or metal oxides, thereby increasing the content of the metal oxides or doped metal oxides in the first carrier functional layer 20 and ultimately increasing the lifespan of the light-emitting device.

[0052] In the step S11:

[0053] In some embodiments, the doped metal oxide includes magnesium-doped zinc oxide. The metal oxide includes zinc oxide.

[0054] Here, the metal oxide can be prepared by carbon thermal method, hydrothermal method or sol-gel method. The doped metal oxide can be prepared by pulsed laser deposition method, sol-gel method, flame spray synthesis method, radio frequency sputtering method or chemical precipitation method.

[0055] For example, since the first carrier function 20 is prepared by a solution method using a metal compound precursor as a raw material. However, it is impossible to ensure that the metal compound precursor reacts fully. Therefore, the prepared doped metal oxide or metal oxide usually contains residual metal compound precursors.

[0056] The residual metal compound precursors include unreacted metal compound precursors and / or metal compound intermediates generated during the reaction.

[0057] In some embodiments, when the first carrier functional layer 20 may be a metal oxide, such as zinc oxide, the residual metal compound precursor includes a zinc precursor.

[0058] Among them, since the zinc precursor will reduce the stability of the QLED device after becoming the electron transport layer, affecting the lifespan of the light-emitting device.

[0059] In some embodiments, the first carrier functional layer 20 may be a doped metal oxide. For example, when it is magnesium-doped zinc oxide (ZMO), the remaining metal compound precursors may include magnesium precursors, zinc precursors, and magnesium intermediate products.

[0060] Among them, the ZMO layer is synthesized by adding a magnesium (Mg) precursor during the synthesis of zinc oxide. Only a part of the magnesium precursor added during the zinc oxide synthesis is converted, and more magnesium elements exist in the ZMO in the form of the original magnesium precursor and / or magnesium intermediate products. At the same time, it is also impossible to ensure the complete removal of the zinc precursor. Therefore, the ZMO layer includes a mixture of zinc impurities and magnesium impurities. Since the magnesium precursor and / or magnesium intermediate product will cause a decrease in the stability of the QLED device after becoming the electron transport layer, resulting in varying degrees of electrical property changes in the device, causing fluctuations in the transport efficiency of the device, and affecting the stability and lifespan of the light-emitting device.

[0061] In some embodiments, the magnesium precursor may include but is not limited to at least one of magnesium acetate, magnesium chloride, and magnesium nitrate. The zinc oxide may be zinc oxide nanoparticles, and the morphology of the zinc oxide may be but is not limited to at least one of nanospheres, nanosheets, and nanorods. The particle size of the zinc oxide may be 2 - 15 nm. For example, the particles of the zinc oxide may be 3 nm, 5 nm, 8 nm, 10 nm, 13 nm.

[0062] In some embodiments, the zinc precursor includes zinc oxide. The magnesium intermediate product includes one or more of Mg(OAc)2(H2O)3(EtOH), Mg(OAc)2(HOAc)2(H2O)2, Mg3(OAc)6(HOAc)2(H2O)2·2HOAc, and Mg3(OAc)6(EtOH)2]·2EtOH.

[0063] The alkali solution includes one or more of an organic base and an inorganic base. The organic base includes but is not limited to one or more of amine compounds, alkali metal salts of alcohols, alkyllithiums, and quaternary ammonium salts. For example, the quaternary ammonium salt may be tetramethylammonium hydroxide (TMAH). The inorganic base may be but is not limited to one or more of potassium hydroxide (KOH), sodium hydroxide (NaOH), and lithium hydroxide (LiOH).

[0064] In some embodiments, the alkali solution further includes an alcohol, and the alcohol includes one or more of ethanol, n-propanol, and isopropanol.

[0065] In some embodiments, the concentration of the alkali solution may be 0.1 - 0.5 mol / mL. For example, the concentration of the alkali solution may be 0.2 mmol / mL, 0.25 mmol / mL, 0.3 mmol / mL, 0.4 mmol / mL, 0.5 mmol / mL.

[0066] In the step S12:

[0067] In some embodiments, the step of disposing the alkali solution on the first carrier functional layer may include: dropping the alkali solution on the first carrier functional layer.

[0068] In some embodiments, the time for disposing the alkali solution on the first carrier functional layer is 1 - 30 s. For example, the time may be 5 s, 10 s, 15 s, 20 s, 25 s.

[0069] In some embodiments, the temperature for disposing the alkali solution on the first carrier functional layer of the light-emitting device preform is 25 - 80 °C. For example, the temperature may be 28 °C, 40 °C, 50 °C, 60 °C, 70 °C. Preferably, the temperature may be 60 - 80 °C.

[0070] In some embodiments, the alcoholysis treatment can be obtained by the formula:

[0071] Residual metal compound precursor + alcohol + alkali → doped metal oxide / metal oxide

[0072] For example, the alcoholysis treatment of the ZnO layer with an ethanol solution of KOH can be obtained by the following formula:

[0073] Zn precursor + ethanol solution of KOH → ZnO

[0074] Again, for example, the alcoholysis treatment of the ZMO layer with an ethanol solution of KOH can be obtained by the following formula:

[0075] Mg precursor / or Mg intermediate + Zn precursor + ethanol solution of KOH → ZnMgO

[0076] It can be understood that the alcoholysis treatment of magnesium-doped zinc oxide (ZMO) with an ethanol solution of KOH drives the reaction of the remaining Zn precursor, Mg precursor and / or intermediate to form ZMO, removing the Mg precursor and / or intermediate and Zn precursor in the interface layer in contact with the first electrode or the second electrode in the first carrier functional layer 20.

[0077] In some embodiments, the method further includes: disposing the alkali solution on the first carrier functional layer of the light-emitting device preform, and performing an alcohol solution treatment on the first carrier functional layer.

[0078] In some embodiments, the alcohol solution treatment is to clean the first carrier functional layer. For example, the alcohol solution is immersed in the first carrier functional layer.

[0079] In some embodiments, the alcohol solution includes one or more of monohydric alcohols, dihydric alcohols, and trihydric alcohols. The monohydric alcohol includes one or more of ethanol, n-propanol, and isopropanol. The dihydric alcohol includes one or more of ethylene glycol, propylene glycol, butanediol, pentanediol, hexanediol, and octanediol. The trihydric alcohol includes one or more of glycerol, butanetriol, pentanetriol, hexanetriol, octanetriol, and guisanchun.

[0080] In some embodiments, the light-emitting device further includes a light-emitting layer 40 located between the first electrode 10 and the first carrier functional layer 20.

[0081] In some embodiments, the light-emitting device further includes a second carrier functional layer 50 located between the second electrode 30 and the light-emitting layer 40.

[0082] An embodiment of the present application provides a light-emitting device obtained by the preparation method of the above light-emitting device.

[0083] In some embodiments, the first electrode 10 and the second electrode 30 can be electrodes known in the art for light-emitting devices. For example, they can be independently selected from, but not limited to, doped metal oxide particle electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, metal elemental electrodes, or alloy electrodes. The material of the doped metal oxide particle electrode can be selected from, but not limited to, one or several of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), and aluminum-doped magnesium oxide (AMO). The composite electrode is a composite electrode in which doped or undoped transparent metal oxide particles sandwich a metal, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, etc. The material of the metal elemental electrode can be selected from, but not limited to, one or several of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba.

[0084] In some embodiments, the thickness of the first electrode 10 can be 40 to 60 nm. For example, 45 nm, 47 nm, 50 nm, 55 nm, 57 nm.

[0085] In some embodiments, the thickness of the second electrode 30 may be 110 to 130 nm. For example, 115 nm, 117 nm, 120 nm, 125 nm, 127 nm.

[0086] In some embodiments, the second carrier functional layer 50 includes a hole transport layer and / or a hole injection layer, and the materials of the hole injection layer and the hole transport layer are independently selected from 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, transition metal oxides, transition metal sulfides and transition metal stannides, one or several of them.

[0087] In some embodiments, the thickness of the hole injection layer may be 60 to 80 nm. For example, 63 nm, 65 nm, 70 nm, 75 nm, 77 nm.

[0088] In some embodiments, the thickness of the hole transport layer may be 60 to 80 nm. For example, 63 nm, 65 nm, 70 nm, 75 nm, 77 nm.

[0089] The material of the light-emitting layer 40 may be selected from, but not limited to, one or more of organic light-emitting materials and quantum dot light-emitting materials.

[0090] The organic light-emitting materials may be selected from, but not limited to, one or more of CBP:Ir(mppy)3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine]iridium(III)), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine]iridium), diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing B-N covalent bonds, HLCT (hybrid local charge transfer excited state) materials, Exciplex (exciplex) light-emitting materials.

[0091] The quantum dot light-emitting materials may be selected from, but not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0092] The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots can be respectively selected from, but not limited to, the single-structure quantum dots selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds can be selected from, but not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds can be selected from, but not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds can be selected from, but not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds can be selected from, but not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0093] As an example, the quantum dots of the core-shell structure can be selected from but not limited to one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS. In the expressions such as CdSe / ZnS above, " / " means that the material after " / " (as the shell layer) coats the material before " / " (as the core layer).

[0094] The perovskite semiconductor material can be selected from but not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs + ion, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu - Cl - Br - I n-2 NH3 + or [NH3(CH2) n NH3] 2+ where n≥2, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu - Cl - Br -One or more of the above.

[0095] Specifically, the quantum dots can be selected from oil-soluble quantum dots, and the oil-soluble quantum dots can include binary-phase, ternary-phase, and quaternary-phase quantum dots; among them, the binary-phase quantum dots can be selected from at least one of CdS, CdSe, CdTe, InP, AgS, PbS, PbSe, and HgS, the ternary-phase quantum dots can be selected from at least one of ZnXCd1-XS, CuXIn1-XS, ZnXCd1-XSe, ZnXSe1-XS, ZnXCd1-XTe, and PbSeXS1-X, and the quaternary-phase quantum dots can be selected from at least one of ZnXCd1-XS / ZnSe, CuXIn1-XS / ZnS, ZnXCd1-XSe / ZnS, CuInSeS, ZnXCd1-XTe / ZnS, and PbSeXS1-X / ZnS. Here, the quantum dots are selected from oil-based quantum dots with ligands attached to their surfaces; among them, the ligands can include at least one of acid ligands, thiol ligands, amine ligands, (oxy)phosphine ligands, phospholipids, lecithins, and polyvinylpyridines. Specifically, the acid ligands can include at least one of decanoic acid, undecylenic acid, myristic acid, oleic acid, and stearic acid; the thiol ligands can include at least one of octyl mercaptan, dodecyl mercaptan, and octadecyl mercaptan; the amine ligands can include at least one of oleylamine, octadecylamine, and octylamine; the (oxy)phosphine ligands are at least one of trioctylphosphine and trioctyloxidephosphine. Among them, when using quantum dot ink, the concentration of the quantum dots is 10 to 100 mg / mL, for example, 20 mg / mL, 30 mg / mL, 50 mg / mL, 70 mg / mL, 90 mg / mL. In the range of 10 to 100 mg / mL, the solution processing performance of the quantum dots is better and the dispersibility is better.

[0096] In some embodiments, the thickness of the light-emitting layer 40 can be 60 to 80 nm. For example, 63 nm, 65 nm, 70 nm, 75 nm, 77 nm.

[0097] In some embodiments, the thickness of the first charge-carrying functional layer 20 can be 40 to 100 nm. For example, 45 nm, 55 nm, 65 nm, 75 nm, 85 nm, 95 nm.

[0098] The embodiments of the present application provide a display device, and the display device can be any electronic product with a display function. The electronic product includes but is not limited to smartphones, tablet computers, laptop computers, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, in-vehicle displays, televisions, or e-book readers. Among them, the smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0099] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0100] Embodiment 1

[0101] Provide a glass substrate. On the glass substrate, form an ITO glass substrate. The thickness of the glass substrate is 20 mm, and the thickness of the ITO glass substrate is 100 nm. Clean the ITO glass plate with a cleaning agent, and then ultrasonically clean it in deionized water, acetone, absolute ethanol, and deionized water for 20 min in sequence. Finally, dry it with high-purity nitrogen to obtain the ITO glass substrate;

[0102] Under an inert atmosphere, spin-coat the hole injection layer and the hole transport layer onto the ITO glass substrate in sequence, and then perform annealing treatment; among them, the inert atmosphere can be an argon atmosphere, the hole transport layer material is TFB, the hole injection layer material is PEDOT:PSS, the spin-coating speed is 3000 rpm, the annealing temperature is 130 °C, the thickness of the hole transport layer is 70 nm, and the thickness of the hole injection layer is 70 nm;

[0103] Spin-coat a quantum dot light-emitting layer on the hole transport layer. Among them, the thickness of the quantum dot light-emitting layer is 70 nm, the material of the quantum dot is CdSeS / ZnS green quantum dot, the surface of the CdSeS / ZnS green quantum dot is connected with octanethiol ligand, and there is 0.2 mmol of ligand in every 1 mg of quantum dot. The quantum dot light-emitting layer is prepared from quantum dot ink, and the concentration of the quantum dot in the quantum dot ink is 30 mg / mL;

[0104] Spin-coat a 30 mg / mL ethanol solution of ZMO on the quantum dot light-emitting layer and place it at 80 °C for 10 minutes to make the ZMO film layer completely dry. Among them, ZMO is 10% magnesium-doped zinc oxide with a particle size of 2 - 5 nm, and the thickness of the ZMO film layer is 50 nm;

[0105] Drop a 0.3 mmol / mL ethanol solution of KOH on the surface of the ZMO film layer, soak it for 30 seconds, then clean it with an ethanol solution, and dry it at room temperature to obtain a film as the electron transport layer. The thickness of the film is 52 nm;

[0106] Evaporate Ag on the surface of the film. Among them, the thickness of Ag is 50 nm;

[0107] Encapsulate under conditions where both the oxygen content and the water content are lower than 0.1 ppm to obtain a light-emitting device.

[0108] Embodiment 2

[0109] This embodiment is basically the same as Embodiment 1, except that in this embodiment, ZnO is used to replace ZMO in Embodiment 1.

[0110] Example 3

[0111] This example is basically the same as Example 1, except that in this example, an ethanol solution of LiOH is used to replace the KOH ethanol solution in Example 1.

[0112] Example 4

[0113] This example is basically the same as Example 1, except that in this example, an ethanol solution of NaOH is used to replace the KOH ethanol solution in Example 1.

[0114] Example 5

[0115] This example is basically the same as Example 1, except that in this example, an ethanol solution of TMAH is used to replace the KOH ethanol solution in Example 1.

[0116] Example 6

[0117] This example is basically the same as Example 1, except that in this example, the concentration of the KOH ethanol solution is 0.1 mmol / mL.

[0118] Example 7

[0119] This example is basically the same as Example 1, except that in this example, the concentration of the KOH ethanol solution is 0.5 mmol / mL.

[0120] Example 8

[0121] This example is basically the same as Example 1, except that in this example, the soaking time is 1 second.

[0122] Example 9

[0123] This example is basically the same as Example 1, except that in this example, the soaking time is 15 seconds.

[0124] Example 10

[0125] This example is basically the same as Example 1, except that in this example, it is infiltrated at 80 °C.

[0126] Example 11

[0127] This example is basically the same as Example 1, except that in this example, it is infiltrated at 70 °C.

[0128] Example 12

[0129] This example is basically the same as Example 1, except that in this example, it is infiltrated at 60 °C.

[0130] Comparative Example 1

[0131] This example is basically the same as Example 3, except that the ZMO film is not treated in this comparative example.

[0132] Comparative Example 2

[0133] This example is basically the same as Example 1, except that the concentration of the ethanol solution of KOH in this example is 0.6 mmol / mL.

[0134] Comparative Example 3

[0135] This example is basically the same as Example 1, except that the soaking time in this example is 60 seconds.

[0136] Performance Test of Quantum Dot Light-Emitting Diodes

[0137] The life T95@1000nit, luminous efficiency, and turn-on / turn-off efficiency of the light-emitting devices of Device Examples 1 to 11 and Device Comparative Examples 1 to 3 were respectively measured. The test results are shown in Table 1.

[0138] Wherein:

[0139] The test method for the life T95@1000nit is as follows: The time required for the device to reduce the brightness to a certain proportion of the maximum brightness under a constant current drive of 2 mA. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this life is the measured life. To shorten the test cycle, the device life test is usually carried out by accelerating the device aging at high brightness, and the life at high brightness is obtained by fitting with the extended exponential decay brightness decay fitting formula. For example, the life at 1000 nit is denoted as T95@1000nit. The specific calculation formula is as follows:

[0140]

[0141] Wherein, T95 L is the life at low brightness, T95 H is the measured life at high brightness, L H is the device accelerated to the maximum brightness, L L is 1000 nit, A is the acceleration factor, and in this experiment, the A value was obtained as 1.7 by measuring the lives of several groups of green QLED devices at the rated brightness.

[0142] The luminous efficiency was obtained using an optical test instrument.

[0143] The turn-on / turn-off efficiency was obtained as the percentage change in the efficiency when the device operates at 1000 nits and restarts after being turned off for 1 minute.

[0144] Table 1

[0145]

[0146]

[0147] As can be seen from Table 1, compared with the light-emitting devices of Comparative Example 1 and Examples 1 to 12, the light-emitting devices of Examples 1 to 12 have a higher device lifetime and luminous efficiency than Comparative Example 1, and have a more stable efficiency performance when restarting operation after the device is powered off.

[0148] Compared with Comparative Example 2 and Examples 6 to 7, the light-emitting devices of Examples 6 to 7 have a higher device lifetime and luminous efficiency than the light-emitting devices of Comparative Example 2, and have a more stable efficiency performance when restarting operation after the device is powered off. The reason is that the concentration of Comparative Example 2 is too high, which easily damages the surface morphology of the film layer and is not conducive to the evaporation of the subsequent electrode.

[0149] Compared with Comparative Example 3 and Examples 8 to 9, the light-emitting devices of Examples 8 to 9 have a higher device lifetime and luminous efficiency than the light-emitting devices of Comparative Example 3, and have a more stable efficiency performance when restarting operation after the device is powered off. The reason is that the soaking time of Comparative Example 3 is too long, resulting in over-modification and affecting the interfacial performance.

[0150] The above has introduced in detail the thin film, preparation method, light-emitting device, and display device provided by the embodiments of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A method for preparing a light-emitting device, characterized in that, Comprising: Providing an alkali solution and a light-emitting device preform, the light-emitting device preform including a first electrode, a light-emitting layer, and a first charge carrier functional layer that are sequentially stacked, and the first charge carrier functional layer containing a metal oxide or a doped metal oxide; Disposing the alkali solution on a side of the first charge carrier functional layer away from the first electrode; Disposing a second electrode on a side of the first charge carrier functional layer away from the first electrode to obtain a light-emitting device.

2. The manufacturing method of the light-emitting device according to claim 1, characterized in that: The method further includes: Disposing an alkali solution on the first charge carrier functional layer of the light-emitting device preform and performing an alcohol solution treatment on the first charge carrier functional layer.

3. The manufacturing method of the light-emitting device according to claim 2, characterized in that: The alcohol solution includes one or more of a monohydric alcohol, a dihydric alcohol, and a trihydric alcohol; and / or The alkali solution includes one or more of an organic base and an inorganic base.

4. The method for manufacturing a light-emitting device according to claim 3, characterized in that: The monohydric alcohol includes one or more of ethanol, n-propanol, and isopropanol; and / or The dihydric alcohol includes one or more of ethylene glycol, propylene glycol, butanediol, pentanediol, hexanediol, and octanediol; and / or The trihydric alcohol includes one or more of glycerol, butanetriol, pentanetriol, hexanetriol, octanetriol, and [a specific name that seems incorrect, should be checked]; and / or The organic base includes one or more of an amine compound, an alkali metal salt of an alcohol, an alkyllithium, and a quaternary ammonium salt; and / or The inorganic base includes one or more of potassium hydroxide, sodium hydroxide, and lithium hydroxide.

5. The method for preparing a light-emitting device according to claim 1, wherein: The time for disposing the alkali solution on the first charge carrier functional layer of the light-emitting device preform is 1 to 30 s; and / or The temperature for disposing the alkali solution on the first charge carrier functional layer of the light-emitting device preform is 25 to 80 °C.

6. The manufacturing method of the light-emitting device according to claim 1, characterized in that: The doped metal oxide includes magnesium-doped zinc oxide; and / or The metal oxide includes zinc oxide.

7. The manufacturing method of the light-emitting device according to claim 6, wherein: The preparation steps of the magnesium-doped zinc oxide include: Pre-treating a magnesium precursor and zinc oxide to obtain magnesium-doped zinc oxide.

8. The manufacturing method of the light-emitting device according to claim 7, characterized in that: The magnesium precursor includes one or more of magnesium acetate, magnesium chloride, and magnesium nitrate.

9. The manufacturing method of the light-emitting device according to claim 1, characterized in that: The light-emitting device further includes a light-emitting layer between the first electrode and the first charge carrier functional layer; and / or The light-emitting device further includes a second charge carrier functional layer between the second electrode and the light-emitting layer.

10. A light-emitting device, characterized in that: The light-emitting device is prepared by the method for preparing a light-emitting device according to any one of claims 1 to 9.

11. The light-emitting device according to claim 10, wherein: The materials of the first electrode and the second electrode are independently selected from one or several of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba; and / or The materials of the light-emitting layer include one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine]iridium(III), 4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine]iridium, diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF materials, polymers containing B-N covalent bonds, HLCT materials, Exciplex light-emitting materials, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, CuInS2, CuInSe2, AgInS2, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, AMX3 and BMX3, where A is Cs + ions, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ or one or more of them, X is a halogen anion selected from Cl - , Br - , I - or one or more of them; B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2; and / or The second carrier functional layer includes a hole transport layer and / or a hole injection layer, and the materials of the hole transport layer and the hole injection layer are independently selected from one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose, tetracyanoquinodimethane, doped graphene, undoped graphene, transition metal oxides, transition metal sulfides and transition metal stannides.

12. A display device, characterized in that: The display device includes the light-emitting device according to any one of claims 10 to 11.

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