Semiconductor laser activation energy solving method and computer equipment

Abstract

The invention discloses a semiconductor laser activation energy solving method and computer equipment. The method comprises the following steps: selecting a plurality of high-temperature acceleration test temperatures from low to high; setting the number of semiconductor laser samples put into a high-temperature acceleration test at each temperature, and performing an initial performance test on each sample to obtain an initial output optical power; the method comprises the following steps: performing a high-temperature acceleration test at a plurality of set temperatures, and performing a specified number of output optical power tests on each sample to obtain the degradation amount of the output optical power of each test relative to the initial output optical power; and the activation energy of the semiconductor laser is calculated by constructing an evaluation function and solving a function extremum equation set. The method is simple and easy to implement, few in man-made interference factors and high in accuracy.

Description

Technical Field

[0001] The present invention belongs to the field of activation energy calculation, and particularly relates to a method for obtaining the activation energy of a semiconductor laser and a computer device. Background Art

[0002] Activation Energy is the energy barrier that a product needs to overcome when changing from a normal working state to a failure state in a high-temperature accelerated life test. The magnitude of the activation energy reflects the difficulty of product failure at different temperatures. Activation energy is one of the important parameters for evaluating the reliability of semiconductor lasers. By obtaining the activation energy, the life of semiconductor lasers under normal use conditions can be predicted, and the reliability of semiconductor lasers can be evaluated.

[0003] The existing methods for obtaining the activation energy of semiconductor lasers usually rely on high-temperature accelerated life tests (ADT). By measuring the failure rate or performance degradation data under different temperature stresses, and then fitting according to the Arrhenius Model to obtain the activation energy, which is then used for reliability evaluation and life prediction.

[0004] However, in the actual engineering process, due to test errors and unstable device performance, the pseudo-lifetimes obtained under each stress often deviate significantly from the true values, which has a great impact on the results and affects the accuracy of the results; it is necessary to subjectively select the distribution type that the pseudo-lifetimes under different stresses follow, and the subjective selection has a great impact on the results and affects the accuracy of the results; the Arrhenius Model is used to fit the activation energy, but the goodness of fit is often less than 90%, resulting in inaccurate calculated activation energy values. Summary of the Invention

[0005] The object of the present invention is to provide a method for obtaining the activation energy of a semiconductor laser, a computer device, a computer-readable storage medium, and a computer program product that are simple, have few human interference factors, and high accuracy.

[0006] To achieve the above object, one aspect of the present invention provides a method for obtaining the activation energy of a semiconductor laser, including:

[0007] Select n high-temperature accelerated test temperatures T1, T2, … Tn from low to high, n where the difference between the reciprocals of adjacent two temperature points is the same:

[0008]

[0009] Set the number of semiconductor laser samples put into the high-temperature accelerated test at each temperature, and obtain the initial output optical power by performing an initial performance test on each sample.

[0010] By performing high-temperature accelerated tests at n set temperatures and conducting output optical power tests on each sample a specified number of times, the degradation amount of the output optical power for each test relative to the initial output optical power is obtained.

[0011] Set four unknowns x1, x2, x3, A, and construct the following evaluation function F:

[0012]

[0013] Where N k represents the number of samples put into the high-temperature accelerated test at temperature Tk, k = 1, 2,... n, and M jk represents the number of times the output optical power of the jth sample is tested at temperature T k , j = 1, 2,... N k , t ijk represents the test time of the ith test of the jth sample at temperature T k , i = 1, 2,... M jk , P ijk represents the degradation amount of the output optical power of the ith test relative to the initial output optical power;

[0014] By solving the following system of equations, the values of the unknowns x2 and A are obtained:

[0015]

[0016] The activation energy E of the semiconductor laser is obtained through the following formula a :

[0017]

[0018] Where k B is the Boltzmann constant.

[0019] Preferably, T1 > T0, T n < T n+1 , where T0 is the ambient temperature when the semiconductor laser operates normally, and T n+1 is the highest temperature that the semiconductor laser can withstand during long-term operation.

[0020] Preferably, n ≥ 3, N k ≥ 4.

[0021] Preferably, in the high-temperature accelerated test, the output optical power of each sample is tested at a specified time interval, and the number of tests is not less than 5 times.

[0022] Preferably, the total test duration of the high-temperature accelerated test is not less than 1000 hours.

[0023] Another aspect of the present invention provides a computer device, including a memory, a processor, and a computer program stored on the memory, where the processor executes the computer program to implement the steps of the above method.

[0024] Another aspect of the present invention provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the above method are implemented.

[0025] Another aspect of the present invention provides a computer program product, including a computer program, and when the computer program is executed by a processor, the steps of the above method are implemented.

[0026] According to the method for obtaining the activation energy of a semiconductor laser, computer device, computer-readable storage medium, and computer program product according to the above aspects of the present invention, it is simple and easy to implement, has few human interference factors, and has a high accuracy rate. Description of the Drawings

[0027] In order to more clearly illustrate the technical solutions of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings:

[0028] Figure 1 is a flowchart of a method for obtaining the activation energy of a semiconductor laser according to an embodiment of the present invention;

[0029] Figure 2 is a structural diagram of a computer device according to an embodiment of the present invention. Detailed Embodiments

[0030] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0031] An embodiment of the present invention provides a method for obtaining the activation energy of a semiconductor laser, as Figure 1 shown, the method for obtaining the activation energy of a semiconductor laser according to the embodiment of the present invention includes steps S1 to S4.

[0032] In step S1, select the temperature points for the high-temperature acceleration test:

[0033] 1) Determine the normal operating temperature of the semiconductor laser (the ambient temperature during normal operation), designated as T0;

[0034] 2) Determine the highest temperature that the semiconductor laser can withstand during long-term operation, designated as T n+1 ;

[0035] 3) Select n temperature points from low to high between T0 and T n+1 , generally not less than 3, which are T1, T2, …, T n , where T1 > T0, T n < T n+1 , and make the difference between the reciprocals approximately the same, that is

[0036]

[0037] In step S2, the initial output optical power is obtained through the initial performance test. The n temperature points set in step S1 represent n kinds of high-temperature stresses. In the high-temperature accelerated test, generally at least 4 semiconductor laser samples are put in under each stress. It is set that Nk samples are put in at temperature Tk, k = 1, 2, … n. During the test, it is necessary to ensure that the semiconductor laser is in the rated working state. Select the output optical power as the sensitive parameter, conduct the initial performance test on all samples, and record their initial output optical power.

[0038] In step S3, the output optical power degradation amount is obtained through the high-temperature accelerated test. The high-temperature accelerated test is carried out at the set n temperatures, and the output optical power of each sample is tested a specified number of times. Every time the test is carried out for a period of time, after the sample temperature is restored to normal temperature, the output optical power test is carried out again to obtain the degradation amount of the output optical power relative to the initial output optical power for each test. The time interval can be set according to the situation, and generally it is required to meet that the total test duration is not less than 1000 hours and the number of tests is not less than 5 times.

[0039] In step S4, establish an expression and solve for the activation energy:

[0040] 1) Let t ijk be the test time of the i-th output optical power test of the j-th semiconductor laser sample at temperature Tk; P iik is the degradation amount of the output optical power at this time relative to the initial output optical power;

[0041] 2) Set 4 unknowns, which are x1, x2, x3, A respectively. Construct the following relational expression of the evaluation function F:

[0042]

[0043] where Mjk represents that under the temperature stress Tk, the j-th sample has carried out Mjk times of output optical power tests, j = 1, 2, … N k .

[0044] 3) Solve the system of equations

[0045] The values of the unknowns \(x_2\) and \(A\) can be obtained by solving the following system of equations.

[0046]

[0047] 4) Calculate the activation energy \(E\) α

[0048] Given the Boltzmann constant, \(k\) B ≈8.617333262×10 -5 eV / K

[0049] Then the activation energy \(E\) of the semiconductor laser a can be obtained by the following formula, with the unit of eV

[0050]

[0051] According to the method for obtaining the activation energy of a semiconductor laser according to an embodiment of the present invention, by selecting the high-temperature accelerated test temperature, testing the output optical power of the semiconductor laser, constructing an evaluation function and solving the function extreme value system of equations, the activation energy of the semiconductor laser can be directly obtained, and has the following advantages:

[0052] 1) The high-temperature accelerated degradation test and performance test can be carried out by conventional methods and are easy to popularize;

[0053] 2) The calculation model is simple, the calculation steps are few, and it is convenient to convert the calculation method into an automatic calculation by a computer program;

[0054] 3) There are few human interference factors in the calculation process, and the accuracy of the obtained activation energy is higher;

[0055] 4) The method is simple and easy to implement, and the cost is low.

[0056] An embodiment of the present invention also provides a computer device, which may be a server, and its internal structure diagram may be as Figure 2As shown. The computer device includes a processor, a memory, and a network interface connected via a system bus. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store the operation parameter data of each framework. The network interface of the computer device is used to communicate with an external terminal via a network connection. When the computer program is executed by the processor, it implements the steps of the method of the embodiments of the present invention.

[0057] Those skilled in the art can understand that Figure 2 the structure shown in is only a block diagram of some structures related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0058] Embodiments of the present invention also provide a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, it implements the steps of the method of the embodiments of the present invention.

[0059] Embodiments of the present invention also provide a computer program product, including a computer program. When the computer program is executed by a processor, it implements the steps of the method of the embodiments of the present invention.

[0060] Only some exemplary embodiments of the present invention have been described above by way of illustration. Undoubtedly, for those of ordinary skill in the art, without departing from the spirit and scope of the present invention, the described embodiments can be modified in various different ways. Therefore, the above drawings and description are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. A method for obtaining the activation energy of a semiconductor laser, characterized in that, Including: Select n high-temperature accelerated test temperatures T1, T2, … T from low to high n , where the difference between the reciprocals of two adjacent temperature points is the same: Setting the number of semiconductor laser samples put into the high-temperature accelerated test at each temperature, and obtaining the initial output optical power by performing initial performance tests on each sample; By performing high-temperature accelerated tests at the set n temperatures and performing output optical power tests on each sample a specified number of times, obtaining the degradation amount of the output optical power in each test relative to the initial output optical power; Setting four unknowns x1, x2, x3, A, and constructing the following evaluation function F: Among them, N k represents the number of samples put into the high-temperature accelerated test at temperature T k , where k = 1, 2, …, n, and M jk represents the number of times the output optical power of the j-th sample is measured at temperature T k , where j = 1, 2, …, N k , t ijk represents the test time of the i-th test of the j-th sample at temperature T k , where i = 1, 2, …, M jk , P ijk represents the degradation amount of the output optical power of the i-th test relative to the initial output optical power; By solving the following system of equations, obtaining the values of the unknowns x2 and A: The activation energy E of the semiconductor laser is obtained by the following formula a :[[]]END]] where k B is the Boltzmann constant.

2. The method according to claim 1, characterized in that T1 > T0, T n <T n+1 , where T0 is the ambient temperature when the semiconductor laser operates normally, and T n+1 is the maximum temperature that the semiconductor laser can withstand during long-term operation.

3. The method according to claim 1 or 2, characterized in that, n≥3, N k ≥4.

4. The method according to claim 1 or 2, characterized in that, In the high-temperature accelerated test, perform output optical power tests on each sample at specified time intervals, and the number of tests is not less than 5 times.

5. The method according to claim 1 or 2, characterized in that, The total test duration of the high-temperature accelerated test is not less than 1000 hours.

6. A computer device, comprising a memory, a processor, and a computer program stored on the memory, characterized in that, The processor executes the computer program to implement the steps of the method described in any one of claims 1-5.

7. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the steps of the method described in any one of claims 1-5.

8. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by the processor, it implements the steps of the method described in any one of claims 1-5.

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