A method for predicting the performance data of a semiconductor ceramic composite material

Abstract

The present invention relates to the technical field of data processing, and particularly to a method for predicting performance data of a semiconductor ceramic composite material. The method conducts any round of repetitive tests on a target varistor according to reference parameters, test parameters, and the number of tests, and obtains a performance characteristic sequence for any round of repetitive tests; obtains the stability coefficient of the target varistor according to the data change situation in the performance characteristic sequence, obtains the performance performance index of the target varistor according to the performance characteristic sequence and the stability coefficient, and obtains new test parameters and a new number of tests for the next round of repetitive tests on the target varistor; obtains the performance performance index of the target varistor in the next round of repetitive tests according to the reference parameters, new test parameters, and new number of tests, and predicts the performance performance index of the target varistor under any test parameters according to all performance performance indexes, improving the accuracy of predicting the key performance of the varistor.

Description

Technical Field

[0001] The present invention relates to the technical field of data processing, and particularly relates to a method for predicting performance data of a semiconductor ceramic composite material. Background Art

[0002] Semiconductor ceramic composites are a type of functional material that combines semiconductor properties and ceramic structural characteristics, usually composed of transition metal oxides (such as etc.) and various doping or auxiliary phases. Due to their excellent electrical properties and other characteristics, they are widely used in the fields of electronic components, etc. Among them, efficient prediction of the key performance of semiconductor ceramic composites can significantly improve the efficiency and reliability of material research and device design: on the one hand, without the need for a large number of experiments, it can quickly judge the performance of materials under different formulations, processes or application conditions, thereby shortening the development cycle and reducing the research and development costs; on the other hand, accurate performance prediction can also be used for quality control and device performance screening to ensure that the final product has excellent stability, response characteristics and lifespan performance in actual use, especially suitable for application scenarios of electronic components with high requirements for performance consistency such as varistors and thermistors.

[0003] For example, a varistor made of a semiconductor ceramic composite material is an electronic component with good non-linear volt-ampere characteristics. Its core function is to sharply reduce the resistance when the voltage exceeds the threshold, thereby realizing the protection of the circuit against overvoltage, and is widely used in scenarios such as circuit protection, surge suppression, and lightning protection. Such devices usually use zinc oxide (ZnO) as the main matrix material, supplemented by a variety of metal oxides (such as etc.) to form a ceramic system, and the required electrical properties are achieved by controlling its microstructure (grains, grain boundaries, second phases, etc.).

[0004] In the existing methods for predicting the key performance of varistors, usually, the varistor is actually measured according to preset test conditions to obtain sample data for modeling analysis, so as to establish its performance prediction model and realize the performance prediction of the varistor under various use environments. However, in the actual test process, the existing methods have a strong dependence on the material system and process conditions, and it is difficult to adapt to the performance differences of varistors under different formulations or manufacturing processes. For example, due to the differences in the microstructure of the varistor itself or the errors caused by the preparation process, the accuracy and stability of the prediction results are often affected. Therefore, relying on the existing methods for performance prediction has significant limitations in terms of intelligence and generality, and it is difficult to meet the need for accurately predicting the performance of varistors under complex systems.

[0005] Therefore, how to improve the accuracy of predicting the key performance of varistors has become an urgent problem to be solved. Summary of the Invention

[0006] In view of this, an embodiment of the present invention provides a method for predicting performance data of a semiconductor ceramic composite material to solve the problem of improving the accuracy of predicting the key performance of a varistor.

[0007] An embodiment of the present invention provides a method for predicting performance data of a semiconductor ceramic composite material, the method comprising the following steps:

[0008] According to the reference parameters, test parameters and number of tests, perform any round of repetitive tests on the target varistor to obtain the performance characteristic coefficients after each test, and form a performance characteristic sequence with all the performance characteristic coefficients, where the number of tests is greater than or equal to 2;

[0009] According to the data change situation in the performance characteristic sequence, obtain the stability coefficient of the target varistor during the any round of repetitive tests, according to the performance characteristic sequence and the stability coefficient, obtain the performance performance index of the target varistor during the any round of repetitive tests, as well as the parameter adjustment coefficient and the new number of tests for the next round of repetitive tests on the target varistor, and adjust the test parameters according to the parameter adjustment coefficient to obtain new test parameters;

[0010] If the new test parameters do not meet the preset conditions, then according to the reference parameters, the new test parameters and the new number of tests, perform the next round of repetitive tests on the target varistor to obtain the performance performance index of the target varistor during the next round of repetitive tests, until the new test parameters meet the preset conditions, obtain the performance performance index of the target varistor during each round of repetitive tests, and predict the performance performance index of the target varistor under any test parameters according to all the performance performance indexes.

[0011] Preferably, the reference parameters include a reference voltage and a reference current, and the test parameters include a test voltage and a test current. Then, according to the reference parameters, test parameters and number of tests, performing any round of repetitive tests on the target varistor to obtain the performance characteristic coefficients after each test includes:

[0012] For any one test in the any round of repetitive tests, apply the reference voltage and the test voltage to the target varistor respectively to obtain the reference output current and the test output current flowing through the target varistor;

[0013] Calculate the ratio between the reference output current and the reference current to obtain a reference resistance characteristic index, calculate the ratio between the test output current and the test current to obtain a test resistance characteristic index, and use the ratio between the test resistance characteristic index and the reference resistance characteristic index as the independent variable of a logarithmic function with base 10 to obtain a first function value;

[0014] Taking the ratio between the test voltage and the reference voltage as the independent variable of a logarithmic function with base 10, a second function value is obtained;

[0015] Calculating the ratio between the first function value and the second function value to obtain the performance characteristic coefficient of the target varistor after any one test.

[0016] Preferably, obtaining the stability coefficient of the target varistor during any round of repetitive testing according to the data change situation in the performance characteristic sequence includes:

[0017] Obtaining the first-order difference sequence of the performance characteristic sequence, calculating the standard deviation of the first-order difference sequence, taking the standard deviation as the independent variable of an exponential function with the natural constant as the base, and obtaining the data dispersion degree of the performance characteristic sequence;

[0018] Denoting the first data in the performance characteristic sequence as the initial data, calculating the absolute value of the difference between each of the other data in the performance characteristic sequence except the initial data and the initial data respectively, and taking the mean of all the absolute values of the differences as the data change degree of the performance characteristic sequence;

[0019] Calculating the product between the data dispersion degree and the data change degree to obtain the overall fluctuation degree of the performance characteristic sequence, calculating the ratio between the overall fluctuation degree and the number of all elements in the performance characteristic sequence, and calculating the reciprocal of the sum of a preset constant and the ratio to obtain the stability coefficient of the target varistor during any round of repetitive testing.

[0020] Preferably, obtaining the performance performance index of the target varistor during any round of repetitive testing according to the performance characteristic sequence and the stability coefficient includes:

[0021] Calculating the product between the average value of all data in the performance characteristic sequence and the stability coefficient to obtain the performance performance index of the target varistor during any round of repetitive testing.

[0022] Preferably, the method for obtaining the parameter regulation coefficient during the next round of repetitive testing of the target varistor includes:

[0023] Obtaining the maximum withstand voltage value of the target varistor, calculating the proportion of the test voltage in the test parameters in the maximum withstand voltage value, and taking the difference between the constant 1 and the proportion as the first characteristic value;

[0024] Taking the stability coefficient as the independent variable of an exponential function with the natural constant as the base to obtain the second characteristic value;

[0025] Calculate the average value of all data in the performance characteristic sequence to obtain the average characteristic coefficient. If any round of repeatability test is the first round of repeatability test, calculate the reciprocal of the average characteristic coefficient to obtain the third characteristic value;

[0026] If any round of repeatability test is not the first round of repeatability test, calculate the absolute value of the difference between the average characteristic coefficient corresponding to any round of repeatability test and the average characteristic coefficient corresponding to the previous round of repeatability test to obtain the characteristic fluctuation amplitude, and calculate the reciprocal of the sum of the preset constant and the characteristic fluctuation amplitude to obtain the third characteristic value;

[0027] Perform linear normalization on the product result among the first characteristic value, the second characteristic value, and the third characteristic value to obtain the voltage parameter regulation coefficient for the next round of repeatability test on the target varistor;

[0028] According to the maximum allowable surge current value of the target varistor and the test current in the test parameters, obtain the current parameter regulation coefficient for the next round of repeatability test on the target varistor.

[0029] Preferably, the method for obtaining the new number of tests includes:

[0030] Calculate the sum of the constant 1 and the stability coefficient to obtain the number regulation ratio, and calculate the product of the number of tests and the number regulation ratio to obtain the new number of tests.

[0031] Preferably, the new test parameters include a new test current and a new test voltage, and the test parameters include a test voltage and a test current. Then, adjusting the test parameters according to the parameter regulation coefficient to obtain the new test parameters includes:

[0032] Calculate the sum of the constant 1 and the voltage parameter regulation coefficient to obtain the voltage regulation ratio, and calculate the product of the test voltage in the test parameters and the voltage regulation ratio to obtain the new test voltage;

[0033] Calculate the sum of the constant 1 and the current parameter regulation coefficient to obtain the current regulation ratio, and calculate the product of the test current in the test parameters and the current regulation ratio to obtain the new test current.

[0034] Preferably, predicting the performance index of the target varistor under any test parameters according to all performance indexes includes:

[0035] Use the reference parameters and test parameters during each round of repetitive testing as the input set of the performance prediction model, and use the performance indicators during each round of repetitive testing as the output set of the performance prediction model. Train the performance prediction model based on the input set and output set to obtain a trained performance prediction model, and use the trained performance prediction model to predict the performance indicators of the target varistor under any test parameters.

[0036] Preferably, the preset conditions include:

[0037] The new test voltage in the new test parameters is greater than the maximum withstand voltage value of the target varistor, or the new test current in the new test parameters is greater than the maximum allowable surge current value of the target varistor.

[0038] Preferably, after the new test parameters meet the preset conditions, it further includes:

[0039] Conduct the last round of repetitive testing on the target varistor according to the reference parameters, the new number of test times, and the maximum withstand voltage value and maximum allowable surge current value of the target varistor, and predict the performance indicators of the target varistor under any test parameters according to the performance indicators during each round of repetitive testing.

[0040] The beneficial effects of the embodiments of the present invention compared with the prior art are:

[0041] The present invention conducts any round of repetitive tests on a target varistor according to a reference parameter, a test parameter, and the number of tests, obtains a performance characteristic coefficient after each test, and forms a performance characteristic sequence with all the performance characteristic coefficients. The number of tests is greater than or equal to 2. According to the data change situation in the performance characteristic sequence, a stability coefficient of the target varistor during the any round of repetitive tests is obtained. According to the performance characteristic sequence and the stability coefficient, a performance performance index of the target varistor during the any round of repetitive tests, as well as a parameter adjustment coefficient and a new number of tests for the next round of repetitive tests on the target varistor are obtained. The test parameter is adjusted according to the parameter adjustment coefficient to obtain a new test parameter. If the new test parameter does not meet the preset conditions, the next round of repetitive tests on the target varistor is conducted according to the reference parameter, the new test parameter, and the new number of tests to obtain the performance performance index of the target varistor during the next round of repetitive tests until the new test parameter meets the preset conditions, and the performance performance index of the target varistor during each round of repetitive tests is obtained. According to all the performance performance indexes, the performance performance index of the target varistor under any test parameter is predicted. Among them, the nonlinear parameter of the target varistor is improved, the performance characteristic coefficient of the target varistor between any two voltages and currents (reference parameter and test parameter) is constructed, the performance performance index of the target varistor is obtained through the stability (stability coefficient) of the target varistor during each round of repetitive tests and the performance characteristic coefficient of each test, and at the same time, according to the change relationship between the performance characteristic coefficient and the test parameter, the test parameter for the next round of repetitive tests on the target varistor is adaptively adjusted to improve the test efficiency and the accuracy of the performance prediction of the target varistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention, and those of ordinary skill in the art can also obtain other drawings without creative efforts based on these drawings.

[0043] Figure 1 It is a flowchart of a method for predicting the performance data of a semiconductor ceramic composite material provided in Embodiment 1 of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0044] The embodiments of the present disclosure will be described in detail below, and the examples of the embodiments are shown in the drawings. The embodiments described below by referring to the drawings are exemplary and are intended to explain the present disclosure, but should not be construed as limiting the present disclosure.

[0045] It should be noted that the terms "first", "second", etc. in the description of the present disclosure and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present disclosure described here can be implemented in an order other than those illustrated or described here. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. On the contrary, they are only examples of devices and methods consistent with some aspects of the present disclosure.

[0046] To illustrate the technical solution of the present invention, the following will be described through specific embodiments.

[0047] See Figure 1 , which is a method flow chart of a method for predicting the performance data of a semiconductor ceramic composite material provided in the first embodiment of the present invention. As Figure 1 shown, the method may include:

[0048] Step S101, perform any round of repetitive tests on the target varistor according to the reference parameters, test parameters, and number of tests, obtain the performance characteristic coefficients after each test, and form a performance characteristic sequence with all the performance characteristic coefficients, where the number of tests is greater than or equal to 2.

[0049] The non-linear coefficient of a varistor refers to a parameter calculated based on the volt-ampere characteristic curve within a specific current and voltage range, that is , where represents the current value flowing through the varistor when the voltage value applied to the varistor is , represents the current value flowing through the varistor when the voltage value applied to the varistor is , The larger

[0050] is, the more sensitive the varistor is to voltage changes, that is, a small voltage change will cause a sharp change in current, and its performance is better. In the existing methods for predicting the key performance of varistors, usually according to the preset test conditions (i.e., the voltage and voltage

[0051] in the non-linear coefficient calculation formula), the varistor is actually measured to obtain the corresponding non-linear coefficient, so as to obtain the sample data for modeling analysis and establish a performance prediction model to achieve the performance prediction of the varistor under various usage environments.However, in the actual testing process, the existing methods are highly dependent on the material system and process conditions, and it is difficult to adapt to the performance differences of varistors under different materials or manufacturing processes. For example, due to the microscopic structure differences of the varistors themselves or the errors caused by the preparation process, the accuracy and stability of the prediction results are often affected. Therefore, relying on the existing methods for performance prediction has significant limitations in terms of intelligence and generality, and it is difficult to meet the demand for accurately predicting the performance of varistors under complex systems. At the same time, in practical applications, varistors may be subjected to long-term surge impacts. After long-term surge impacts, the interface aging inside the varistor material and the changes in the microstructure may cause changes in its performance, thereby affecting the performance stability and service life of the varistor.

[0052] Therefore, in the embodiments of the present invention, a varistor with any performance to be predicted is denoted as the target varistor, the test conditions are adjusted according to the characteristics of the target varistor, and then the target varistor is repeatedly tested according to each test condition, so as to establish a performance prediction model based on the non-linear coefficient after each test under all test conditions, and improve the accuracy of predicting the performance of varistors in various usage environments.

[0053] First, obtain the maximum withstand voltage value and the maximum allowable surge current value of the target varistor, and set the test conditions for the first round of repeated testing of the target varistor: respectively take 0.005 times the maximum withstand voltage value and the maximum allowable surge current value as the reference parameters; respectively take 0.01 times the maximum withstand voltage value and the maximum allowable surge current value as the test parameters for the first round of repeated testing of the target varistor; the duration of each test in the first round of repeated testing is , the number of tests is 100 times, which is not limited here, and the implementer can set it according to the specific scenario. Among them, the number of tests must be greater than or equal to 2. At the same time, 0.005 times the maximum withstand voltage value is denoted as the reference voltage, 0.005 times the maximum allowable surge current value is denoted as the reference current, 0.01 times the maximum withstand voltage value is denoted as the test voltage, and 0.01 times the maximum allowable surge current value is denoted as the test current.

[0054] Then, perform the first round of repeated testing on the target varistor according to the reference parameters, test parameters and the number of tests. Since in actual operation, the varistor may be in a scenario where the voltage and current change in real time, therefore, in the embodiments of the present invention, according to the function and characteristics of the non-linear coefficient, the calculation formula of the non-linear coefficient is optimized to obtain the performance characteristic coefficient of the target varistor after each test, which is used to characterize the performance of the target varistor after each test. The specific method for obtaining the performance characteristic coefficient of the target varistor after each test is:

[0055] For any one of the first-round repetitive tests, apply the reference voltage and the test voltage to the target varistor respectively, and obtain the reference output current and the test output current flowing through the target varistor through a current sensor;

[0056] Calculate the ratio between the reference output current and the reference current to obtain the reference resistance characteristic index, calculate the ratio between the test output current and the test current to obtain the test resistance characteristic index, and use the ratio between the test resistance characteristic index and the reference resistance characteristic index as the independent variable of the logarithmic function with base 10 to obtain the first function value;

[0057] Use the ratio between the test voltage and the reference voltage as the independent variable of the logarithmic function with base 10 to obtain the second function value;

[0058] Calculate the ratio between the first function value and the second function value to obtain the performance characteristic coefficient of the target varistor after any one of the tests.

[0059] In one embodiment, taking the i-th test as an example, the calculation formula for the performance characteristic coefficient of the target varistor after the i-th test is:

[0060]

[0061] Among them, represents the performance characteristic coefficient of the target varistor after the i-th test in the j-th round of repetitive tests (at this time j = 1, that is, the first round of repetitive tests), represents the test output current during the i-th test in the j-th round of repetitive tests (at this time j = 1, that is, the first round of repetitive tests), represents the test current (0.01 times the maximum allowable surge current value) in the j-th round of repetitive tests (at this time j = 1, that is, the first round of repetitive tests), represents the reference output current during the i-th test, represents the reference current (0.005 times the maximum allowable surge current value), represents the test voltage (0.01 times the maximum withstand voltage value) in the first round of repetitive tests (at this time j = 1, that is, the first round of repetitive tests), represents the reference voltage (0.005 times the maximum withstand voltage value), represents the logarithmic function with base 10.

[0062] It should be noted that, The larger the , the more sensitive the varistor is to voltage changes, that is, a small voltage change will cause a sharp change in current, and the better the performance of the target varistor in the i-th test.

[0063] Similarly, obtain the performance characteristic coefficients of the target varistor after each test in the first-round repeatability test, and form all the performance characteristic coefficients into a performance characteristic sequence. Analyze the performance characteristic sequence to obtain the test conditions for the target varistor in the second-round repeatability test.

[0064] Step S102: According to the data change situation in the performance characteristic sequence, obtain the stability coefficient of the target varistor in any round of repeatability test. According to the performance characteristic sequence and the stability coefficient, obtain the performance performance index of the target varistor in any round of repeatability test, as well as the parameter adjustment coefficient and the new number of tests for the target varistor in the next round of repeatability test. Adjust the test parameters according to the parameter adjustment coefficient to obtain new test parameters.

[0065] If the data fluctuation in the performance characteristic sequence is greater, it indicates that in the first-round repeatability test, the performance stability of the target varistor is worse, its life may decay faster, and thus the performance of the target varistor is worse. Therefore, in the embodiment of the present invention, according to the data change situation in the performance characteristic sequence corresponding to the target varistor in the first-round repeatability test, obtain the stability coefficient of the target varistor in the first-round repeatability test, which is used to characterize the stability of the target varistor in the first-round repeatability test. Specifically:

[0066] Obtain the first-order difference sequence of the performance characteristic sequence, calculate the standard deviation of the first-order difference sequence, take the standard deviation as the independent variable of the exponential function with the natural constant as the base, and obtain the data dispersion degree of the performance characteristic sequence;

[0067] Record the first data in the performance characteristic sequence as the initial data, calculate the absolute value of the difference between each data other than the initial data in the performance characteristic sequence and the initial data respectively, and take the mean value of all the absolute values of the differences as the data change degree of the performance characteristic sequence;

[0068] Calculate the product between the data dispersion degree and the data change degree to obtain the overall fluctuation degree of the performance characteristic sequence. Calculate the ratio between the overall fluctuation degree and the number of all elements in the performance characteristic sequence, and calculate the reciprocal of the sum of the preset constant and the ratio to obtain the stability coefficient of the target varistor in the first-round repeatability test.

[0069] In an embodiment, the calculation formula for the stability coefficient of the target varistor in the first-round repeatability test is:

[0070]

[0071] Among them, represents the stability coefficient of the target varistor during the j-th round of repeatability test (at this time j = 1, that is, the first round of repeatability test), represents the standard deviation of the first-order difference sequence of the performance characteristic sequence of the target varistor during the j-th round of repeatability test (at this time j = 1, that is, the first round of repeatability test), represents the number of all elements in the performance characteristic sequence of the target varistor during the j-th round of repeatability test (at this time j = 1, that is, the first round of repeatability test), that is, the number of tests of the target varistor during the j-th round of repeatability test, represents the first performance characteristic coefficient (initial data) in the performance characteristic sequence, represents the i-th performance characteristic coefficient in the performance characteristic sequence except the initial data, that is, the performance characteristic coefficient at the i-th test, C represents a preset constant, represents the absolute value symbol, and e represents the natural constant.

[0072] It should be noted that The larger the , the more discrete the data distribution in the first-order difference sequence of the performance characteristic sequence, the greater the data fluctuation in the performance characteristic sequence, and thus the larger the , the smaller the stability of the target varistor in the j-th round of repeatability test; The larger the

[0073] , it indicates that as the number of tests increases, the change in the performance characteristic coefficient of the target varistor is greater, and thus

[0074] The smaller the stability of the target varistor in the j-th round of repeatability test. C is used to prevent the denominator from being 0. In the embodiments of the present invention, C = 1 is set, and there is no limitation here. The implementer can set it according to the specific scenario.

[0075] In an embodiment, the calculation formula for the performance performance index of the target varistor during the first round of repeatability test is:

[0076]

[0077] Among them, represents the performance performance index of the target varistor during the j-th round of repeatability test (at this time j = 1, that is, the first round of repeatability test), denotes the stability coefficient of the target varistor during the j-th round of repeatability test (at this time, j = 1, that is, the first round of repeatability test). denotes the average value of all data in the performance characteristic sequence of the target varistor during the j-th round of repeatability test (at this time, j = 1, that is, the first round of repeatability test).

[0078] It should be noted that The larger, the better the stability of the target varistor, and then The larger, the better the performance of the target varistor under the test conditions of the j-th round of repeatability test; The larger, the more sensitive the target varistor is to the change of the test voltage during the j-th round of repeatability test, and then The larger, the better the performance of the target varistor under the test conditions of the j-th round of repeatability test.

[0079] So far, the first round of repeatability test of the target varistor is completed. Further, the second round of repeatability test is carried out on the target varistor.

[0080] In the embodiment of the present invention, by analyzing the performance characteristic sequence and the stability coefficient of the target varistor during the first round of repeatability test, the parameter adjustment coefficient of the target varistor during the second round of repeatability test is obtained, so as to adjust the test conditions of the target varistor during the second round of repeatability test according to the self-characteristics of the target varistor: if the stability coefficient of the target varistor during the first round of repeatability test is large, it means that the performance of the target varistor is good. During the second round of repeatability test, the number of tests and the step size of the increase of the applied current and voltage should be appropriately increased, so as to quickly obtain the performance change of the target varistor; on the contrary, the step size of the increase of the applied current and voltage needs to be appropriately reduced, so as to obtain a more subtle performance change of the target varistor and improve the accuracy of the performance prediction of the target varistor. Specifically:

[0081] Obtain the maximum withstand voltage value of the target varistor, calculate the ratio of the test voltage in the test parameters to the maximum withstand voltage value, and take the difference between the constant 1 and the ratio as the first characteristic value;

[0082] Take the stability coefficient as the independent variable of the exponential function with the natural constant as the base to obtain the second characteristic value;

[0083] Calculate the average value of all data in the performance characteristic sequence to obtain the average characteristic coefficient, and calculate the reciprocal of the average characteristic coefficient to obtain the third characteristic value;

[0084] Perform linear normalization on the product result among the first eigenvalue, the second eigenvalue, and the third eigenvalue to obtain the voltage parameter regulation coefficient for the second-round repeatability test of the target varistor. Here, linear normalization is a prior art and will not be elaborated herein.

[0085] In one embodiment, the calculation formula for the voltage parameter regulation coefficient for the second-round repeatability test of the target varistor is:

[0086]

[0087] Wherein, represents the voltage parameter regulation coefficient for the (j + 1)-th round repeatability test of the target varistor (at this time, j = 1, that is, the second-round repeatability test), represents the test voltage for the j-th round repeatability test (at this time, j = 1, that is, the first-round repeatability test), represents the maximum withstand voltage value of the target varistor, represents the average value of all data in the performance characteristic sequence for the j-th round repeatability test (at this time, j = 1, that is, the first-round repeatability test), represents the average value of all data in the performance characteristic sequence for the (j - 1)-th round repeatability test, represents the stability coefficient for the j-th round repeatability test of the target varistor (at this time, j = 1, that is, the first-round repeatability test), represents the linear normalization function, and C represents a preset constant.

[0088] It should be noted that, is the first eigenvalue, is the second eigenvalue, is the third eigenvalue. Since j = 1 at this time, that is, the first-round repeatability test, it is the first-round repeatability test. Therefore, the third eigenvalue at this time is That is, when j = 1, . The smaller , the larger the adjustable space of the test voltage in the (j + 1)-th round repeatability test. Furthermore, the larger , and when is larger, the step size of the voltage increase applied to the target varistor in the (j + 1)-th round repeatability test can be larger. Furthermore, is larger; The larger , the smaller the performance difference of the target varistor under the test conditions of this round (the j-th round) and the previous round repeatability test. The target varistor is more stable and has better performance. Then, the step size of the voltage increase applied to the target varistor in the (j + 1)-th round repeatability test can be larger to quickly obtain the performance change of the target varistor. Furthermore, The larger it is; C is used to prevent the denominator from being 0. In the present invention, C is set to 1, which is not limited here, and the implementer can set it according to the specific scenario.

[0089] Similarly, according to the maximum allowable surge current value of the target varistor and the test current in the test parameters, the current parameter regulation coefficient for the second-round repetitive test of the target varistor is obtained. That is, the calculation formula for the current parameter regulation coefficient for the second-round repetitive test of the target varistor is: , where represents the test current of the j-th round of repetitive test (the previous round of repetitive test of the (j + 1)-th round of repetitive test, at this time j = 1, that is, the first round of repetitive test), represents the maximum allowable surge current value of the target varistor.

[0090] Further, according to the voltage parameter regulation coefficient and the current parameter regulation coefficient for the second-round repetitive test of the target varistor, new test parameters for the second-round repetitive test of the target varistor are obtained. The new test parameters include a new test voltage and a new test current. Among them, the specific method for obtaining the new test voltage is:

[0091] Calculate the sum between the constant 1 and the voltage parameter regulation coefficient to obtain the voltage regulation ratio, and calculate the product between the test voltage in the test parameters and the voltage regulation ratio to obtain the new test voltage.

[0092] In an implementation manner, the calculation formula for the new test voltage for the second-round repetitive test of the target varistor is:

[0093]

[0094] where represents the new test voltage for the (j + 1)-th round of repetitive test of the target varistor (at this time j = 1, that is, the second round of repetitive test), represents the test voltage of the j-th round of repetitive test (at this time j = 1, that is, the first round of repetitive test), represents the voltage parameter regulation coefficient for the (j + 1)-th round of repetitive test of the target varistor (at this time j = 1, that is, the second round of repetitive test).

[0095] It should be noted that the larger the voltage parameter regulation coefficient is, the larger the new test voltage for the second-round repetitive test of the target varistor is.

[0096] Among them, the specific method for obtaining the new test current is:

[0097] Calculate the sum between the calculation constant 1 and the current parameter regulation coefficient to obtain the current regulation ratio, and calculate the product between the test current in the test parameters and the current regulation ratio to obtain the new test current.

[0098] In one embodiment, the calculation formula for the new test current during the second-round repetitive test of the target varistor is:

[0099]

[0100] Wherein, represents the test current during the (j + 1)-th round of repetitive test of the target varistor (at this time j = 1, that is, the second-round repetitive test), represents the test current during the j-th round of repetitive test (at this time j = 1, that is, the first-round repetitive test), represents the current parameter regulation coefficient during the (j + 1)-th round of repetitive test of the target varistor (at this time j = 1, that is, the second-round repetitive test).

[0101] It should be noted that the larger the current parameter regulation coefficient, the larger the new test current during the second-round repetitive test of the target varistor.

[0102] Further, according to the stability coefficient during the previous-round repetitive test (the first-round repetitive test) of the target varistor during the second-round repetitive test, obtain the number of test times during the second-round repetitive test of the target varistor, denoted as the new test times. Specifically:

[0103] Calculate the sum between the constant 1 and the stability coefficient to obtain the number regulation ratio, and perform ceiling operation on the product between the number of test times and the number regulation ratio to obtain the new test times.

[0104] In one embodiment, the calculation formula for the new test times during the second-round repetitive test of the target varistor is:

[0105]

[0106] Wherein, represents the new test times during the (j + 1)-th round of repetitive test of the target varistor (at this time j = 1, that is, the second-round repetitive test), represents the number of test times during the j-th round of repetitive test of the target varistor (at this time j = 1, that is, the first-round repetitive test), represents the stability coefficient during the j-th round of repetitive test of the target varistor (at this time j = 1, that is, the first-round repetitive test), 1 represents a constant, represents the ceiling symbol.

[0107] It should be noted that the greater the stability coefficient during the j - th round of repetitive testing, the better the stability of the target varistor. Then, the number of tests during the (j + 1)-th round of repetitive testing is more, which is convenient for more sensitively capturing the attenuation of performance such as the life of the target varistor.

[0108] Thus, the acquisition of new test parameters and new number of tests for the target varistor during the second round of repetitive testing is completed.

[0109] Step S103, if the new test parameters do not meet the preset conditions, then according to the reference parameters, the new test parameters and the new number of tests, conduct the next round of repetitive testing on the target varistor to obtain the performance index of the target varistor during the next round of repetitive testing, until the new test parameters meet the preset conditions, obtain the performance index of the target varistor during each round of repetitive testing, and predict the performance index of the target varistor under any test parameters based on all performance indices.

[0110] To prevent the new test voltage during the second round of repetitive testing from being greater than the maximum withstand voltage of the target varistor, or the new test current from being greater than the maximum allowable surge current value of the target varistor, which may cause damage to the target varistor. Therefore, after obtaining the new test voltage and new test current during the second round of repetitive testing through step S102, it is necessary to judge first: if the new test voltage is less than or equal to the maximum withstand voltage of the target varistor, and the new test current is less than or equal to the maximum allowable surge current value of the target varistor, then according to the reference parameters (0.005 times the maximum withstand voltage and the maximum allowable surge current value), the new test parameters (new test voltage and new test current), and the new number of tests, conduct the second round of repetitive testing on the target varistor to obtain the performance index of the target varistor during the second round of repetitive testing, that is and the new test parameters and new number of tests for the next round of repetitive testing. Among them, the duration of each test is still the same as the duration of each test during the first round of repetitive testing.

[0111] Similarly, obtain the test parameters of the target varistor during each round of repetitive testing until the new test voltage calculated for the next round of repetitive testing is greater than the maximum withstand voltage of the target varistor, or the new test current is greater than the maximum allowable surge current value of the target varistor. At this time, according to the maximum withstand voltage, the maximum allowable surge current value, the reference parameters, and the new number of tests for the next round of repetitive testing, conduct the last round of repetitive testing on the target varistor to obtain the performance index of the target varistor during the last round of repetitive testing.

[0112] So far, the performance index of the target varistor in each round of repeatability test has been obtained.

[0113] In the embodiment of the present invention, by training the SVR model, a performance prediction model for predicting the performance of the varistor is obtained. Therefore, after obtaining all the performance indexes, the reference parameters and test parameters in each round of repeatability test are used as the input set of the SVR model, and the performance indexes in each round of repeatability test are used as the output set of the SVR model. The SVR model is trained according to the input set and the output set to obtain a performance prediction model. According to the performance prediction model, the performance indexes of all varistors with the same material system and process conditions as the target varistor under any test parameters are predicted. Among them, the training of the SVR model is a prior art and will not be elaborated here.

[0114] In summary, the present invention conducts any round of repeatability test on the target varistor according to the reference parameters, test parameters and the number of tests, obtains the performance characteristic coefficient after each test, and forms a performance characteristic sequence with all the performance characteristic coefficients, where the number of tests is greater than or equal to 2; according to the data change situation in the performance characteristic sequence, the stability coefficient of the target varistor in the any round of repeatability test is obtained, and according to the performance characteristic sequence and the stability coefficient, the performance index of the target varistor in the any round of repeatability test, as well as the parameter adjustment coefficient and the new number of tests for the next round of repeatability test of the target varistor are obtained. The test parameters are adjusted according to the parameter adjustment coefficient to obtain new test parameters; if the new test parameters do not meet the preset conditions, then according to the reference parameters, the new test parameters and the new number of tests, the next round of repeatability test is conducted on the target varistor to obtain the performance index of the target varistor in the next round of repeatability test until the new test parameters meet the preset conditions, and the performance indexes of the target varistor in each round of repeatability test are obtained. According to all the performance indexes, the performance indexes of the target varistor under any test parameters are predicted. Among them, the nonlinear parameters of the target varistor are improved, and the performance characteristic coefficient of the target varistor between any two voltages and currents (reference parameters and test parameters) is constructed. By the stability (stability coefficient) of the target varistor in each round of repeatability test and the performance characteristic coefficient of each test, the performance index of the target varistor is obtained. At the same time, according to the change relationship between the performance characteristic coefficient and the test parameters, the test parameters for the next round of repeatability test of the target varistor are adaptively adjusted, improving the test efficiency and the accuracy of the performance prediction of the target varistor.

[0115] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A method for predicting the performance data of a semiconductor ceramic composite material, characterized in that, The method for predicting the performance data of a semiconductor ceramic composite material includes: According to the reference parameters, test parameters, and number of tests, perform any round of repetitive tests on the target varistor to obtain the performance characteristic coefficients after each test, and form a performance characteristic sequence with all the performance characteristic coefficients. The number of tests is greater than or equal to 2; the reference parameters include the reference voltage and reference current, and the test parameters include the test voltage and test current; According to the data change situation in the performance characteristic sequence, obtain the stability coefficient of the target varistor during the any round of repetitive tests. According to the performance characteristic sequence and the stability coefficient, obtain the performance performance index of the target varistor during the any round of repetitive tests, as well as the parameter adjustment coefficient and the new number of tests for the next round of repetitive tests on the target varistor. Adjust the test parameters according to the parameter adjustment coefficient to obtain the new test parameters; If the new test parameters do not meet the preset conditions, then according to the reference parameters, the new test parameters, and the new number of tests, perform the next round of repetitive tests on the target varistor to obtain the performance performance index of the target varistor during the next round of repetitive tests until the new test parameters meet the preset conditions, obtain the performance performance index of the target varistor during each round of repetitive tests, and predict the performance performance index of the target varistor under any test parameters according to all the performance performance indexes; The obtaining of the performance performance index of the target varistor during the any round of repetitive tests according to the performance characteristic sequence and the stability coefficient includes: Calculate the product between the average value of all the data in the performance characteristic sequence and the stability coefficient to obtain the performance performance index of the target varistor during the any round of repetitive tests; The obtaining method of the parameter adjustment coefficient for the next round of repetitive tests on the target varistor includes: Obtain the maximum withstand voltage value of the target varistor, calculate the proportion of the test voltage in the test parameters in the maximum withstand voltage value, and use the difference between the constant 1 and the proportion as the first characteristic value; Use the stability coefficient as the independent variable of the exponential function with the natural constant as the base to obtain the second characteristic value; Calculate the average value of all the data in the performance characteristic sequence to obtain the average characteristic coefficient. If the any round of repetitive tests is the first round of repetitive tests, then calculate the reciprocal of the average characteristic coefficient to obtain the third characteristic value; If the any round of repetitive tests is not the first round of repetitive tests, then calculate the absolute value of the difference between the average characteristic coefficient corresponding to the any round of repetitive tests and the average characteristic coefficient corresponding to the previous round of repetitive tests to obtain the characteristic fluctuation amplitude, and calculate the reciprocal of the sum of the preset constant and the characteristic fluctuation amplitude to obtain the third characteristic value; Perform linear normalization on the product result of the first characteristic value, the second characteristic value, and the third characteristic value to obtain the voltage parameter adjustment coefficient for the next round of repetitive tests on the target varistor; Based on the maximum allowable surge current value of the target varistor and the test current in the test parameters, obtain the current parameter regulation coefficient for the next round of repetitive testing of the target varistor; The method for obtaining the new number of tests includes: Calculate the sum of the constant 1 and the stability coefficient to obtain the number regulation ratio, calculate the product of the number of tests and the number regulation ratio and round up to obtain the new number of tests.

2. The performance data prediction method of a semiconductor ceramic composite material according to claim 1, characterized in that For any round of repetitive testing of the target varistor according to the reference parameters, test parameters and number of tests, and obtain the performance characteristic coefficient after each test, including: For any one test in the any round of repetitive testing, apply the reference voltage and the test voltage to the target varistor respectively to obtain the reference output current and the test output current flowing through the target varistor; Calculate the ratio of the reference output current to the reference current to obtain the reference resistance characteristic index, calculate the ratio of the test output current to the test current to obtain the test resistance characteristic index, and use the ratio between the test resistance characteristic index and the reference resistance characteristic index as the independent variable of the logarithmic function with base 10 to obtain the first function value; Use the ratio between the test voltage and the reference voltage as the independent variable of the logarithmic function with base 10 to obtain the second function value; Calculate the ratio between the first function value and the second function value to obtain the performance characteristic coefficient of the target varistor after the any one test.

3. A method for predicting performance data of a semiconductor ceramic composite material according to claim 1, characterized in that, Based on the data change situation in the performance characteristic sequence, obtain the stability coefficient of the target varistor during the any round of repetitive testing, including: Obtain the first-order difference sequence of the performance characteristic sequence, calculate the standard deviation of the first-order difference sequence, and use the standard deviation as the independent variable of the exponential function with the natural constant as the base to obtain the data dispersion degree of the performance characteristic sequence; Record the first data in the performance characteristic sequence as the initial data, calculate the absolute value of the difference between each data in the performance characteristic sequence except the initial data and the initial data respectively, and use the mean value of all the absolute values of the differences as the data change degree of the performance characteristic sequence; Calculate the product of the data dispersion degree and the data change degree to obtain the overall fluctuation degree of the performance characteristic sequence, calculate the ratio of the overall fluctuation degree to the number of all elements in the performance characteristic sequence, and calculate the reciprocal of the sum of the preset constant and the ratio to obtain the stability coefficient of the target varistor during the any round of repetitive testing.

4. A method for predicting performance data of a semiconductor ceramic composite material according to claim 1, characterized in that The new test parameters include a new test current and a new test voltage, and the test parameters include a test voltage and a test current. Then, adjusting the test parameters according to the parameter regulation coefficient to obtain the new test parameters includes: Calculate the sum of the constant 1 and the voltage parameter regulation coefficient to obtain the voltage regulation ratio, and calculate the product of the test voltage in the test parameters and the voltage regulation ratio to obtain the new test voltage; Calculate the sum between the calculation constant 1 and the current parameter regulation coefficient to obtain the current regulation ratio, and calculate the product between the test current in the test parameters and the current regulation ratio to obtain the new test current.

5. The performance data prediction method of a semiconductor ceramic composite material according to claim 1, characterized in that, Predict the performance index of the target varistor under any test parameters according to all performance indexes, including: Use the reference parameters and test parameters in each round of repetitive tests as the input set of the performance prediction model, and use the performance indexes in each round of repetitive tests as the output set of the performance prediction model. Train the performance prediction model according to the input set and output set to obtain a trained performance prediction model, and use the trained performance prediction model to predict the performance indexes of the target varistor under any test parameters.

6. The performance data prediction method of a semiconductor ceramic composite material according to claim 1, characterized in that, The preset conditions include: The new test voltage in the new test parameters is greater than the maximum withstand voltage value of the target varistor, or the new test current in the new test parameters is greater than the maximum allowable surge current value of the target varistor.

7. The performance data prediction method of a semiconductor ceramic composite material according to claim 1, characterized in that, After the new test parameters meet the preset conditions, it further includes: According to the reference parameters, the new number of test times, and the maximum withstand voltage value and the maximum allowable surge current value of the target varistor, conduct the last round of repetitive tests on the target varistor, and predict the performance indexes of the target varistor under any test parameters according to the performance indexes in each round of repetitive tests.

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