High dynamic range imaging system

Abstract

The invention relates to the field of high dynamic range imaging, in particular to a high dynamic range imaging system, which comprises a secondary power supply conversion module, an optical lens, an electron bombardment device and a detector processing board, and is characterized in that the secondary power supply conversion module supplies power to the electron bombardment device and the detector processing board at the same time; the electron bombardment device comprises a photoelectric cathode and a backside illuminated TDICMOS detector; the detector processing board comprises a detector driver and an imaging controller; the optical lens focuses incident light on the photoelectric cathode, acceleration is carried out through high voltage, and high-speed electrons output by the photoelectric cathode bombard the backside illuminated TDICMOS detector to generate electron multiplication; and the imaging controller receives imaging parameters input from the outside, sets the current row period, the integral series, the pixel gain, the analog gain and the electron bombardment voltage, outputs an electron bombardment voltage control signal to the secondary power supply conversion module and outputs a detector driving control signal to the detector driver. The weak light can be detected.

Description

Technical Field

[0001] The present invention belongs to the technical field of high dynamic range imaging, and particularly relates to a high dynamic range imaging system. Background Art

[0002] ‌EBAPS (Electron Bombarded Active Pixel Sensor) is an electron bombarded active pixel sensor. As a new type of night vision imaging digital device, EBAPS is particularly suitable for ultra-low light level video imaging due to its two characteristics of low readout noise and high resolution. Abroad, EBAPS devices have been widely used in fields such as target observation under night environmental conditions, field work, wilderness exploration, night photography hobby, underwater operation, detection, search and rescue, scientific research, and biofluorescence detection.

[0003] For applications where the incident light energy is weaker than 10 -5 lux, traditional ICCD (Intensified Charge-Coupled Device) detectors and ICMOS (Integrated Complementary Metal-Oxide-Semiconductor) detectors cannot detect either. In addition, for applications with high line frequency or high frame rate, such as low-orbit applications where staring imaging mode cannot be achieved by the satellite's swing, a high line frequency or high frame rate is required under a high image shift speed, while conventional area array detectors do not meet the requirements of high frame rate applications. Summary of the Invention

[0004] In view of this, the present invention aims to provide a high dynamic range imaging system to solve the technical problem that traditional ICCD detectors and ICMOS detectors cannot detect weak light.

[0005] To achieve the above object, the technical solution of the present invention is realized as follows: A high dynamic range imaging system, comprising a secondary power conversion module, an optical lens, an electron bombardment device, and a detector processing board; wherein, the secondary power conversion module supplies power to both the electron bombardment device and the detector processing board; the electron bombardment device includes a photocathode and a back-illuminated TDICMOS detector; the detector processing board includes a detector driver and an imaging controller; the optical lens focuses the incident light onto the photocathode, and the high voltage between the photocathode and the back-illuminated TDICMOS detector accelerates the light, and the high-speed electrons output by the photocathode bombard the back-illuminated TDICMOS detector to generate electron multiplication. The serial image data output by the back-illuminated TDICMOS detector is conditioned by the imaging controller and then the image data is output; the imaging controller receives the externally input imaging parameters through a serial bus, sets the current row period (determined by the ground pixel resolution of the corresponding orbit, not determined by the solar altitude angle and the ground object reflectivity where the shooting target is located), the integration level, the pixel gain, the analog gain, and the electron bombardment voltage, and outputs an electron bombardment voltage control signal to the secondary power conversion module and outputs a detector drive control signal to the detector driver. The secondary power conversion module adjusts the electron bombardment voltage of the electron bombardment device according to the electron bombardment voltage control signal, and the detector driver performs amplitude and power drive on the detector drive control signal and then sends it to the back-illuminated TDICMOS detector.

[0006] Further, when is the case, the pixel gain, electron multiplication gain, PGA gain, and integration level of the readout amplifier are set to the maximum. At this time, the signal-to-noise ratio and the dynamic range are respectively: ; ; Among them, is the electron multiplication gain, is the equivalent number of electrons of the incident light, is the number of electrons corresponding to the dark current of the photocathode, is the number of electrons corresponding to the dark current of the back-illuminated TDICMOS detector, is the pixel gain of the readout amplifier, is the gain value of the PGA amplifier, is the readout noise, is the quantization noise, is the amplifier noise, is the additional noise factor in the electron multiplication process, is the electron multiplication gain and the gain value of the PGA amplifier and the pixel gain of the readout amplifier The full well charge number corresponding to when all are set to 1, and n is the number of integration levels. is the maximum pixel gain of the readout amplifier, is the maximum electron multiplication gain, is the maximum gain of the PGA amplifier, is the maximum number of integration levels; When the pixel gain of the readout amplifier, the gain of the PGA amplifier, and the number of integration levels are set to the maximum, and the electron multiplication gain is set to: ; At this time, the signal-to-noise ratio and the dynamic range are respectively: ; ; Among them, is the minimum value of the electron multiplication gain; When the pixel gain of the readout amplifier and the number of integration levels are set to the maximum, the electron multiplication gain is set to the minimum, and the gain of the PGA amplifier is set to: ; At this time, the signal-to-noise ratio and the dynamic range are respectively: ; ; When the number of integration levels is set to the maximum, the electron multiplication gain and the gain of the PGA amplifier are set to the minimum, and the pixel gain of the readout amplifier is set to: ; At this time, the signal-to-noise ratio and the dynamic range are respectively: ; ; Among them, is the minimum gain of the PGA amplifier; When the electron multiplication gain, the gain of the PGA amplifier, and the pixel gain of the readout amplifier are set to the minimum, and the number of integration levels is set to: ; At this time, the signal-to-noise ratio and the dynamic range They are respectively: ; ; Among them, is the minimum pixel gain of the readout amplifier, is the minimum number of integration levels.

[0007] Furthermore, the priority settings of the electron bombardment power supply, the number of integration levels, the pixel gain, and the analog gain of the electron bombardment device are as follows: When the image gray value output by the back-illuminated TDICMOS detector is saturated, reduce the electron bombardment power supply of the electron bombardment device until the electron bombardment power supply is turned off, and determine whether the image output by the back-illuminated TDICMOS detector is saturated; If the image gray value output by the back-illuminated TDICMOS detector is still saturated after the electron bombardment power supply is turned off, then reduce the analog gain until the analog gain is set to the lowest value, and determine whether the image output by the back-illuminated TDICMOS detector is saturated; If the image gray value output by the back-illuminated TDICMOS detector is still saturated after the analog gain is set to the lowest value, then reduce the pixel gain until the pixel gain is set to the lowest value, and determine whether the image output by the back-illuminated TDICMOS detector is saturated; If the image gray value output by the back-illuminated TDICMOS detector is still saturated after the pixel gain is set to the lowest value, then reduce the number of integration levels until the number of integration levels is set to the lowest value.

[0008] Furthermore, heat conduction blocks for heat conduction are respectively connected to the back of the photocathode and the back-illuminated TDICMOS detector.

[0009] Compared with the prior art, the present invention can achieve the following beneficial effects: 1. By using a back-illuminated TDICMOS detector with low readout noise and low dark noise to replace the traditional CMOS detector, on the one hand, the noise can be reduced, and on the other hand, the total integration time can be increased by using a high number of integration levels to collect more light energy, thereby improving the signal-to-noise ratio.

[0010] 2. The back-illuminated TDICMOS detector belongs to a linear array detector, and the CMOS detector belongs to a planar array detector. Using a linear array detector to replace a planar array detector can make up for the defect that the signal-to-noise ratio is too low due to the too short integration time in the staring imaging mode; for example, in low-orbit imaging applications, high line frequencies or high frame frequencies are required, and the general planar array detectors do not meet the high frame frequency application requirements.

[0011] 3. Through the multiplication function of electron bombardment, the equivalent readout noise, dark noise, and quantization noise of the detector can be effectively reduced, thereby obtaining a high signal-to-noise ratio under low light conditions.

[0012] 4. By using a highly integrated TDICMOS detector, compared with some APS chips with analog differential outputs, digital image data can be directly output without the need for voltage following, differential amplification, and analog-to-digital conversion, which can improve the integration of the system.

[0013] 5. By cooling the photocathode and the back-illuminated TDICMOS detector separately through a heat conduction block, the dark noise can be further reduced, thereby improving the signal-to-noise ratio and dynamic range of the imaging system. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The schematic embodiments and descriptions thereof of the present invention are used to explain the present invention and do not constitute an improper limitation to the present invention. In the drawings: Figure 1 is a schematic structural diagram of the imaging system of the detector according to the embodiments of the present invention.

[0015] The reference numerals therein include: secondary power conversion module 1, optical lens 2, electron bombardment device 3, photocathode 31, back-illuminated TDICMOS detector 32, detector processing board 4, detector driver 41, and imaging controller 42. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0016] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and do not constitute a limitation to the present invention.

[0017] It should be noted that, without conflict, the embodiments and features in the embodiments of the present invention may be combined with each other.

[0018] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0019] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, the terms "mounted", "connected", "coupled" shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood through specific circumstances.

[0020] The present invention will be described in detail below with reference to the drawings and in conjunction with the embodiments.

[0021] As Figure 1As shown in the figure, the high-dynamic-range imaging system provided by the embodiment of the present invention includes a secondary power conversion module 1, an optical lens 2, an electron bombardment device 3, and a detector processing board 4. Among them, the secondary power conversion module 1 supplies power to both the electron bombardment device 3 and the detector processing board 4 at the same time. The electron bombardment device 3 includes a photocathode 31 and a back-illuminated TDICMOS detector 32. The whole of the photocathode 31 and the back-illuminated TDICMOS detector 32 is sealed to form a sealed electron bombardment device 3. The detector processing board 4 includes a detector driver 41 and an imaging controller 42. The optical lens 2 focuses the incident light on the photocathode 31, and is accelerated by the high voltage between the photocathode 31 and the back-illuminated TDICMOS detector 32. The high-speed electrons output by the photocathode 31 bombard the back-illuminated TDICMOS detector 32 to generate electron multiplication, so as to collect more electrons. The serial image data output by the back-illuminated TDICMOS detector 32 is conditioned by the imaging controller 42 and then the image data is output. The imaging controller 42 receives the imaging parameters input externally through a serial bus, sets the current line period, integration level, pixel gain, analog gain, and electron bombardment voltage, and outputs an electron bombardment voltage control signal to the secondary power conversion module 1 and outputs a detector drive control signal to the detector driver 41. The secondary power conversion module 1 adjusts the electron bombardment voltage of the electron bombardment device 3 according to the electron bombardment voltage control signal, and the detector driver 41 performs amplitude and power drive on the detector drive control signal and then sends it to the back-illuminated TDICMOS detector 32.

[0022] In order to improve the dynamic range of the high-dynamic-range imaging system, heat conduction blocks are respectively connected to the back of the photocathode 31 and the back-illuminated TDICMOS detector 32. Thus, the heat conduction between the photocathode 31 and the back-illuminated TDICMOS detector 32 can be realized through the two heat conduction blocks, and the working temperature of the photocathode 31 and the working temperature of the back-illuminated TDICMOS detector 32 can be reduced.

[0023] The imaging controller 42 uses the FPGA 6vlx550tff1760 of Xilinx Corporation; the back-illuminated TDICMOS detector 32 uses a detector customized by Changguang Sensen Co., Ltd.; the electron bombardment device 3 uses the product of North Night Vision Technology Co., Ltd.; the secondary power conversion module 1 uses the power module of the 510th Institute; the detector driver 41 uses the 16424 chip of ST Corporation.

[0024] For push-broom imaging in earth observation instead of relative stationary imaging, a back-illuminated TDICMOS detector 32 with low readout noise and low dark noise is used to replace the traditional area array detector. The back-illuminated TDICMOS detector 32 belongs to linear array applications and can make up for the defect of too low signal-to-noise ratio due to too short integration time in the staring imaging mode. The back-illuminated TDICMOS detector 32 directly outputs digital differential signals and does not output analog differential signals, eliminating the need for voltage following, differential amplification, and analog-to-digital conversion, which can improve the system integration level.

[0025] Priority setting for electron bombardment power supply, integration stage number, pixel gain, and analog gain of the electron bombardment device 3: (1)When the image gray value output by the back-illuminated TDICMOS detector 32 is saturated, reduce the electron bombardment power supply of the electron bombardment device 3 until the electron bombardment power supply is turned off, and then judge whether the image output by the back-illuminated TDICMOS detector 32 is saturated.

[0026] (2)If the image gray value output by the back-illuminated TDICMOS detector 32 is still saturated after the electron bombardment power supply is turned off, reduce the analog gain until the analog gain is set to the lowest value, and then judge whether the image output by the back-illuminated TDICMOS detector 32 is saturated.

[0027] (3)If the image gray value output by the back-illuminated TDICMOS detector 32 is still saturated after the analog gain is set to the lowest value, reduce the pixel gain until the pixel gain is set to the lowest value, and then judge whether the image output by the back-illuminated TDICMOS detector 32 is saturated.

[0028] (4)If the image gray value output by the back-illuminated TDICMOS detector 32 is still saturated after the pixel gain is set to the lowest value, reduce the integration stage number until the integration stage number is set to the lowest value, and then judge whether the image output by the back-illuminated TDICMOS detector 32 is saturated. If it is still saturated, no subsequent processing will be performed.

[0029] The electron bombardment device 3 internally includes photoelectric conversion, electron multiplication, variable integration stage number accumulation, adjustable output charge-voltage conversion coefficient, and variable analog amplification gain. Then the signal-to-noise ratio and dynamic range are as follows: ; ; When the electron bombardment device 3 forms an image, is the electron multiplication gain, is the equivalent electron number of the incident light, is the number of electrons corresponding to the dark current of the photocathode 31, is the number of electrons corresponding to the dark current of the back-illuminated TDICMOS detector 32, is the pixel gain of the readout amplifier (related to the charge-voltage conversion system), is the gain value of the PGA amplifier (hereinafter simply referred to as the PGA gain), is the square of the readout noise, is the square of the quantization noise, , is the square of the amplifier noise, is the additional noise factor of the electron multiplication process, is the electron multiplication gain , the gain value of the PGA amplifier , the pixel gain of the readout amplifier are all set to 1, and the full well charge number corresponding to this is \(n\) which is the number of integration levels.

[0030] The selection of imaging parameters for the electron bombardment device 3 includes the following situations: The first situation: When , that is, when using the maximum pixel gain , the maximum electron multiplication gain , the maximum PGA gain , and the maximum number of integration levels still cannot saturate the back-illuminated TDICMOS detector 32. At this time, set the pixel gain of the readout amplifier , the electron multiplication gain , the gain value of the PGA amplifier and the number of integration levels \(n\) to the maximum. Under the conditions of the current parameters, the signal-to-noise ratio and the dynamic range of the electron bombardment device 3 obtained are respectively: ; ; Among them, is the maximum pixel gain of the readout amplifier, is the maximum electron multiplication gain, is the maximum PGA gain, is the maximum number of integration levels.

[0031] The second situation: When , that is, when using the maximum number of integration levels , the maximum pixel gain , the maximum electron multiplication gain and the maximum PGA gain When , the back-illuminated TDICMOS detector 32 will be in a saturated state, and when using the maximum integration level , the maximum PGA gain , the maximum pixel gain and the minimum electron multiplication gain , the back-illuminated TDICMOS detector 32 will not be in a saturated state. At this time, set the pixel gain of the readout amplifier , the PGA gain and the integration level n to the maximum, and set the electron multiplication gain to: ; Under the conditions of the current parameters, the signal-to-noise ratio and the dynamic range of the electron bombardment device 3 are respectively: ; .

[0032] The third case: When , that is, when using the maximum integration level , the maximum PGA gain , the maximum pixel gain and the minimum electron multiplication gain , the back-illuminated TDICMOS detector 32 will be in a saturated state, and when using the highest integration level , the minimum electron multiplication gain , the maximum pixel gain and the minimum PGA gain , the back-illuminated TDICMOS detector 32 will not be in a saturated state. At this time, set the pixel gain of the readout amplifier and the integration level n to the maximum, set the electron multiplication gain to the minimum, and set the PGA gain to: ; Under the conditions of the current parameters, the signal-to-noise ratio and the dynamic range of the electron bombardment device 3 are respectively: ; .

[0033] The fourth case: When , that is, when using the maximum integration level , the minimum PGA gain , the maximum pixel gain and the minimum electron multiplication gain When, the back-illuminated TDICMOS detector 32 will be in a saturated state, while using the highest integration level , the minimum electron multiplication gain , the minimum pixel gain and the minimum PGA gain When, the back-illuminated TDICMOS detector 32 will not be in a saturated state. At this time, set the integration level n to the maximum, set the electron multiplication gain and the PGA gain to the minimum, and set the pixel gain of the readout amplifier to: ; Under the conditions of the current parameters, the signal-to-noise ratio and the dynamic range of the electron bombardment device 3 are respectively: ; .

[0034] The fifth case: When , that is, when using the highest integration level , the minimum PGA gain , the minimum pixel gain and the minimum electron multiplication gain , the back-illuminated TDICMOS detector 32 will be in a saturated state, while using the minimum integration level , the minimum electron multiplication gain , the minimum pixel gain and the minimum PGA gain , the back-illuminated TDICMOS detector 32 will not be in a saturated state. At this time, set the electron multiplication gain , the PGA gain , the pixel gain of the readout amplifier to the minimum, and set the integration level n to: ; Under the conditions of the current parameters, the signal-to-noise ratio and the dynamic range of the electron bombardment device 3 are respectively: ; ; Among them, is the minimum pixel gain of the readout amplifier, is the minimum number of integration stages.

[0035] By determining the saturation condition of the back-illuminated TDICMOS detector 32 and adjusting parameters, stable and efficient imaging of the back-illuminated TDICMOS detector 32 under various illumination conditions is achieved, the signal-to-noise ratio and dynamic range are balanced, and image saturation distortion caused by improper parameters is avoided.

[0036] The present invention proposes to use a back-illuminated TDICMOS detector 32 with low readout noise and low dark noise to replace the traditional CMOS detector. In the weak light state, the multiplication function of electron bombardment, the TDI integration stage number, the high pixel gain and the analog gain are used simultaneously to increase the number of collected electrons, so as to reduce noise and thus improve the signal-to-noise ratio in weak light; in strong light, the multiplication function of sub-bombardment is cancelled, the TDI integration stage number is reduced, the pixel gain and the analog gain are reduced, so as to obtain the maximum full well and the maximum signal-to-noise ratio.

[0037] It should be understood that various forms of the processes shown above can be used, steps can be reordered, added or deleted. For example, the steps described in the disclosure of the present invention can be executed in parallel, sequentially or in a different order, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and no limitation is made herein.

[0038] The above specific embodiments do not constitute a limitation to the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A high dynamic range imaging system, characterized in that, It includes a secondary power conversion module, an optical lens, an electron bombardment device, and a detector processing board; among them, The secondary power conversion module supplies power to both the electron bombardment device and the detector processing board simultaneously; The electron bombardment device includes a photocathode and a back-illuminated TDICMOS detector; The detector processing board includes a detector driver and an imaging controller; The optical lens focuses the incident light onto the photocathode, which is accelerated by the high voltage between the photocathode and the back-illuminated TDICMOS detector. The high-speed electrons output by the photocathode bombard the back-illuminated TDICMOS detector to generate electron multiplication. The serial image data output by the back-illuminated TDICMOS detector is conditioned by the imaging controller and then the image data is output; The imaging controller receives the externally input imaging parameters through a serial bus, sets the current line period, integration level, pixel gain, analog gain, and electron bombardment voltage, and outputs an electron bombardment voltage control signal to the secondary power conversion module and outputs a detector drive control signal to the detector driver. The secondary power conversion module adjusts the electron bombardment voltage of the electron bombardment device according to the electron bombardment voltage control signal, and the detector driver performs amplitude and power drive on the detector drive control signal and then sends it to the back-illuminated TDICMOS detector.

2. The high-dynamic-range imaging system according to claim 1, wherein When the pixel gain, electron multiplication gain, PGA gain, and integration level of the sense amplifier are set to maximum, the signal-to-noise ratio and dynamic range of the electron bombardment device are respectively ； ； Among them, is the electron multiplication gain, is the equivalent number of electrons of the incident light, is the number of electrons corresponding to the dark current of the photocathode, is the number of electrons corresponding to the dark current of the back-illuminated TDICMOS detector, is the pixel gain of the readout amplifier, is the gain value of the PGA amplifier, is the readout noise, is the quantization noise, is the amplifier noise, is the additional noise factor in the electron multiplication process, is the electron multiplication gain , the gain value of the PGA amplifier , the pixel gain of the readout amplifier are all set to the full well charge number when they are 1. n is the number of integration stages, is the maximum pixel gain of the readout amplifier, is the maximum electron multiplication gain, is the maximum gain of the PGA amplifier, is the maximum number of integration stages; When occurs, set the pixel gain of the sense amplifier, the gain of the PGA amplifier, and the integration level to maximum, and set the electron multiplication gain to: ； The signal-to-noise ratio of the electron bombardment device at this time and the dynamic range are respectively as follows: ； ； Among them, is the minimum value of the electron multiplication gain; When occurs, set the pixel gain and integration level of the sense amplifier to maximum, set the electron multiplication gain to minimum, and set the gain of the PGA amplifier to: ； At this time, the signal-to-noise ratio and dynamic range are respectively: ； ； When is true, set the integration series to maximum, set the electron multiplication gain and the gain of the PGA amplifier to minimum, and set the pixel gain of the readout amplifier to: ； At this time, the signal-to-noise ratio of the electron bombardment device and the dynamic range are respectively as follows: ； ； Among them, is the minimum gain of the PGA amplifier; When occurs, set the electron multiplication gain, the gain of the PGA amplifier, and the pixel gain of the readout amplifier to the minimum, and set the integration level to: ； At this time, the signal-to-noise ratio of the electron bombardment device and the dynamic range are respectively ； ； Among them, is the minimum pixel gain of the sense amplifier, is the minimum number of integration stages.

3. The high dynamic range imaging system according to claim 2, wherein Priority setting for the electron bombardment power supply, integration level, pixel gain, and analog gain of the electron bombardment device: When the image gray value output by the back-illuminated TDICMOS detector is saturated, reduce the electron bombardment power supply of the electron bombardment device until the electron bombardment power supply is turned off, and determine whether the image output by the back-illuminated TDICMOS detector is saturated; If the image gray value output by the back-illuminated TDICMOS detector is still saturated after the electron bombardment power supply is turned off, reduce the analog gain until the analog gain is set to the lowest value, and determine whether the image output by the back-illuminated TDICMOS detector is saturated; If the image gray value output by the back-illuminated TDICMOS detector is still saturated after the analog gain is set to the lowest value, reduce the pixel gain until the pixel gain is set to the lowest value, and determine whether the image output by the back-illuminated TDICMOS detector is saturated; If the image gray value output by the back-illuminated TDICMOS detector is still saturated after the pixel gain is set to the lowest value, reduce the integration level until the integration level is set to the lowest value.

4. The high dynamic range imaging system according to claim 1, characterized in that, Thermal conduction blocks for thermal conduction are respectively connected to the back of the photocathode and the back-illuminated TDICMOS detector.

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