Variable resistance type memory, preparation method thereof and electronic equipment

Abstract

The invention relates to the field of semiconductor device preparation, and provides a variable resistive memory and a preparation method thereof, and electronic equipment, the memory comprises a bottom electrode layer, a selector layer, a resistive layer and a top electrode layer; the selector layer and the resistive layer are arranged between the bottom electrode layer and the top electrode layer; the selector layer is prepared from silicon dioxide doped with an arsenic element; the resistive layer comprises any one or more of scandium, titanium, strontium, yttrium, lanthanum and barium and aluminum nitride. The variable resistance type memory is used for overcoming the defects that when an existing variable resistance type memory is applied to a scene with a large data volume, the data read-write speed is low, and data read-write is inaccurate, and the variable resistance type memory provided by the scheme of the invention has good data read-write performance.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device preparation, and particularly relates to a resistive random access memory, a preparation method thereof, and an electronic device. Background Art

[0002] A resistive random access memory (RRAM) is a non-volatile memory that realizes information storage and reading by changing the resistance value of an internal material.

[0003] When applied to scenarios with a small amount of data, such as the field of smart wearables, the resistive random access memory can exhibit good resistive switching performance to achieve secure storage and accurate reading of data.

[0004] However, with the rapid development of the big data and AI fields, the scenarios where resistive random access memories need to be applied are increasing day by day. However, when the existing resistive random access memories are applied to the above scenarios with a large amount of data, it is difficult to exhibit optimal performance, and there are problems of slow data reading and writing speed and inaccurate data reading and writing. Summary of the Invention

[0005] The present invention provides a resistive random access memory, a preparation method thereof, and an electronic device to solve the defects of slow data reading and writing speed and inaccurate data reading and writing when the existing resistive random access memories are applied to scenarios with a large amount of data. The resistive random access memory provided by the solution of the present application has good data reading and writing performance.

[0006] The present invention provides a resistive random access memory, including a bottom electrode layer, a selector layer, a resistive switching layer, and a top electrode layer;

[0007] The selector layer and the resistive switching layer are disposed between the bottom electrode layer and the top electrode layer;

[0008] The selector layer is prepared from silicon dioxide doped with arsenic element;

[0009] The resistive switching layer includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride.

[0010] According to the resistive random access memory provided by the present invention, the mass ratio of aluminum nitride in the resistive switching layer is 30%-98%.

[0011] The present invention further provides a preparation method of a resistive random access memory, including:

[0012] Depositing a bottom electrode layer on a substrate by physical vapor deposition or chemical vapor deposition;

[0013] Deposit silicon dioxide on the bottom electrode layer by chemical vapor deposition;

[0014] Inject arsenic ions into the silicon dioxide to obtain a selector layer;

[0015] Deposit a resistive switching layer on the selector layer, the resistive switching layer including any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride;

[0016] Deposit a top electrode layer on the resistive switching layer by physical vapor deposition or chemical vapor deposition.

[0017] According to the method for preparing a variable resistive memory provided by the present invention, the resistive switching layer is obtained by physical vapor deposition or pulsed laser deposition.

[0018] According to the method for preparing a variable resistive memory provided by the present invention, the method for preparing the selector layer includes:

[0019] Deposit silicon dioxide on the bottom electrode;

[0020] Inject arsenic element into the silicon dioxide to form a selector layer.

[0021] According to the method for preparing a variable resistive memory provided by the present invention, the depositing silicon dioxide on the bottom electrode includes:

[0022] Deposit silicon dioxide on the bottom electrode by chemical vapor deposition.

[0023] According to the method for preparing a variable resistive memory provided by the present invention, the material of the bottom electrode layer includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride;

[0024] The bottom electrode layer is obtained by physical vapor deposition or chemical vapor deposition.

[0025] According to the method for preparing a variable resistive memory provided by the present invention, the material of the top electrode layer includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride;

[0026] The top electrode layer is obtained by physical vapor deposition or chemical vapor deposition.

[0027] According to the method for preparing a variable resistive memory provided by the present invention, the depositing a resistive switching layer on the selector layer includes:

[0028] Deposit the resistive switching layer material on the selector layer by physical vapor deposition or pulsed laser deposition, the mass ratio of aluminum nitride in the resistive switching layer material being 30%-98%.

[0029] The present invention also provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the program, the preparation method of any one of the variable resistive memories as described above is implemented.

[0030] The present invention also provides a non-transitory computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the preparation method of any one of the variable resistive memories as described above is implemented.

[0031] The present invention also provides a computer program product, including a computer program. When the computer program is executed by a processor, the preparation method of any one of the variable resistive memories as described above is implemented.

[0032] The variable resistive memory provided by the present invention forms a "1S1R" memory structure, that is, the selector layer and the resistive switching layer can correspond one by one. Such a memory structure uses a selector to replace the transfer transistor in the related art, which can achieve higher storage accuracy. At the same time, the selector can also isolate the resistive switching layer to prevent the sneak current generated by the unselected information from interfering with the read and written data during the data read and write process, that is, improving the accuracy of data read and write. The selector also has the function of fast switching, which can improve the read and write speed of the memory. Further, the resistive switching layer can be prepared based on doped aluminum nitride. By using the high resistivity and good resistive switching characteristics of aluminum nitride, the resistive switching performance of the resistive switching layer can be improved. By doping scandium, titanium, strontium, yttrium, lanthanum, barium and other relatively inert metal elements in aluminum nitride, the data read and write performance of the memory can be further improved. In the scenario of a large amount of data, it can still exert the optimal performance, with fast data read and write speed and accurate data read and write. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0034] Figure 1 is one of the schematic structural diagrams of the variable resistive memory provided by the embodiments of the present invention;

[0035] Figure 2 is another schematic structural diagram of the variable resistive memory provided by the embodiments of the present invention;

[0036] Figure 3 is the schematic flowchart of the preparation method of the variable resistive memory provided by the embodiments of the present invention;

[0037] Figure 4 It is a schematic diagram of the physical structure of the electronic device provided by an embodiment of the present invention.

[0038] Wherein:

[0039] 100 - bottom electrode layer; 200 - selector layer; 300 - resistive switching layer; 400 - top electrode layer;

[0040] 500 - word line; 600 - bit line. Specific embodiments

[0041] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below with reference to the accompanying drawings in the present invention. Apparently, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present invention without making creative efforts shall fall within the protection scope of the present invention.

[0042] Figure 1 It is one of the schematic diagrams of the structure of the resistive random access memory provided by an embodiment of the present invention.

[0043] As Figure 1 shown, this embodiment provides a resistive random access memory, including a bottom electrode layer, a selector layer, a resistive switching layer and a top electrode layer;

[0044] The selector layer and the resistive switching layer are disposed between the bottom electrode layer and the top electrode layer;

[0045] The selector layer is prepared from silicon dioxide doped with arsenic element;

[0046] The resistive switching layer includes any one or more of scandium, titanium, strontium, yttrium, lanthanum and barium and aluminum nitride.

[0047] The selector layer in the resistive random access memory provided by this embodiment is a two-terminal device, which is turned on when the voltage is higher than a specific voltage, otherwise it remains in the off state. The function of the selector is to isolate the memory cells and prevent sneak currents from being generated in the unselected cells during read and write operations, thereby improving the density and performance of the memory.

[0048] The resistive switching layer is the core storage element of the resistive random access memory. The resistance state of the resistive switching layer can be changed by applying an external voltage to achieve the purpose of data storage. The high resistance state of the resistive switching layer can represent data "0", and the low resistance state can represent data "1".

[0049] The variable resistor memory provided in this embodiment can be applied to a CIM memory. The basic idea of the CIM memory is to move data calculation to the memory cells storing data to achieve in-situ calculation, thereby eliminating bandwidth limitations and data movement costs.

[0050] As Figure 2 shown, when the variable resistor memory provided in this embodiment is applied to a CIM memory, multiple word lines and bit lines can also be set. By cross-placing them in different planes, each intersection position of the word line and the bit line is a variable resistor memory. From Figure 2 it can be seen that the bottom electrode layer can be in contact with the word line (WL), and the top electrode layer can be in contact with the bit line (BL).

[0051] Both the word line and the bit line are lines for transmitting data. When performing memory read or write operations, the word line can be used to locate a specific memory. The word line can identify which memory needs to be read or written by providing an address. Additionally, the bit line can be used to transmit specific binary data bits. That is to say, when the CIM memory operates, multiple variable resistor memories can be used to jointly store data. Each variable resistor memory can store only one binary code, namely "0" or "1". When data needs to be read or written, the specific variable resistor memory for data read or write can be located through the word line, and the data can be stored in the variable resistor memory or the data stored in the variable resistor memory can be retrieved through the bit line.

[0052] The variable resistor memory provided in this embodiment forms a "1S1R" memory structure, that is, the selector layer and the resistive switching layer can correspond one by one. Such a memory structure uses a selector to replace the transmission transistor in the related art, which can achieve higher storage accuracy. At the same time, the selector can also isolate the resistive switching layer to prevent sneak currents generated by unselected information during data read and write from interfering with the read and written data, that is, improving the accuracy of data read and write. The selector also has the function of fast switching, which can improve the read and write speed of the memory. Further, the resistive switching layer can be prepared based on doped aluminum nitride. By using the high resistivity and good resistive switching properties of aluminum nitride, the resistive switching performance of the resistive switching layer can be improved. And by doping relatively inert metal elements such as scandium, titanium, strontium, yttrium, lanthanum, and barium in aluminum nitride, the data read and write performance of the memory can be further improved.

[0053] In an exemplary embodiment, the mass ratio of aluminum nitride in the resistive switching layer is 30% - 98%.

[0054] In practical applications, the material of the resistive switching layer satisfies the following chemical formula: Al 1-x (X 1-y Y y )x N, where both X and Y are doped metal elements, namely any one of scandium, titanium, strontium, yttrium, lanthanum, and barium. x ranges from 2% to 70%, that is, the mass ratio of the doped metal elements other than aluminum nitride in the resistive switching layer material is 2% to 70%, that is, the mass ratio of aluminum nitride is 30% to 98%. y ranges from 0% to 100%, indicating that the doped metal elements can be one or more. For example, when y is 0%, the doped metal element is only X; when y is 100%, the doped metal element is only Y.

[0055] In practice, the thickness of the resistive switching layer can be from 10 nanometers to 50 nanometers, preferably from 30 nanometers to 40 nanometers.

[0056] Next, a method for manufacturing the variable resistive memory provided by the present invention will be described. The method for manufacturing the variable resistive memory described below can be referred to in correspondence with the variable resistive memory described above.

[0057] As Figure 3 shown, the method for manufacturing the variable resistive memory provided by the present invention includes:

[0058] Step 301: Deposit a bottom electrode layer on a substrate by physical vapor deposition or chemical vapor deposition.

[0059] Step 302: Deposit silicon dioxide on the bottom electrode layer by chemical vapor deposition.

[0060] Step 303: Inject arsenic ions into the silicon dioxide to obtain a selector layer.

[0061] Step 304: Deposit a resistive switching layer on the selector layer. The resistive switching layer includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride.

[0062] Step 305: Deposit a top electrode layer on the resistive switching layer by physical vapor deposition or chemical vapor deposition.

[0063] In an exemplary embodiment, the resistive switching layer is obtained by physical vapor deposition or pulsed laser deposition.

[0064] Physical Vapor Deposition (PVD) refers to a technique that, under vacuum conditions, uses physical methods to vaporize the surface of a material source (solid or liquid) into gaseous atoms or molecules, or partially ionize them into ions, and through a low-pressure gas (or plasma) process, deposits a thin film with a certain special function on the substrate surface.

[0065] Pulsed Laser Deposition (PLD), also known as pulsed laser ablation, is a technique that uses a laser to bombard an object and then deposits the bombarded material on different substrates to obtain a deposit or thin film.

[0066] PVD and PLD have many of the same advantages, such as high quality of the deposited thin film and high process controllability, which can meet the high-precision requirements for the preparation of the resistive switching layer.

[0067] In an exemplary embodiment, the method for preparing the selector layer includes:

[0068] Deposit silicon dioxide on the bottom electrode;

[0069] Inject arsenic elements into the silicon dioxide to form a selector layer.

[0070] In practice, when injecting arsenic into silicon dioxide, ion implantation can be used. The electron energy of the injected arsenic ions can be between 3 - 10 keV, and the concentration can be 10 13 per square centimeter to 10 15 per square centimeter.

[0071] In an exemplary embodiment, depositing silicon dioxide on the bottom electrode includes:

[0072] Deposit silicon dioxide on the bottom electrode by chemical vapor deposition.

[0073] In an exemplary embodiment, the material of the bottom electrode layer includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride;

[0074] The bottom electrode layer is obtained by physical vapor deposition or chemical vapor deposition.

[0075] In practical applications, the thickness of the bottom electrode layer can be 20 nanometers to 100 nanometers, preferably 60 nanometers.

[0076] In an exemplary embodiment, the material of the top electrode layer includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride;

[0077] The top electrode layer is obtained by physical vapor deposition or chemical vapor deposition.

[0078] In practical applications, the thickness of the top electrode layer can be 20 nanometers to 100 nanometers, preferably 60 nanometers.

[0079] In an exemplary embodiment, depositing a resistive switching layer on the selector layer includes:

[0080] By physical vapor deposition or pulsed laser deposition, a resistive switching layer material is deposited on the selector layer, and the mass ratio of aluminum nitride in the resistive switching layer material is 30%-98%.

[0081] Figure 4 An example of a schematic physical structure of an electronic device is shown in Figure 4 As shown, the electronic device may include: a processor 410, a communications interface 420, a memory 430, and a communication bus 440. Among them, the processor 410, the communication interface 420, and the memory 430 communicate with each other through the communication bus 440. The processor 410 can call the logical instructions in the memory 430 to execute a method for preparing a variable resistive memory. The method includes:

[0082] A bottom electrode layer is deposited on a substrate by physical vapor deposition or chemical vapor deposition;

[0083] Silicon dioxide is deposited on the bottom electrode layer by chemical vapor deposition;

[0084] Arsenic ions are implanted into the silicon dioxide to obtain a selector layer;

[0085] A resistive switching layer is deposited on the selector layer. The resistive switching layer includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium, and aluminum nitride;

[0086] A top electrode layer is deposited on the resistive switching layer by physical vapor deposition or chemical vapor deposition.

[0087] In addition, when the logical instructions in the above-mentioned memory 430 are implemented in the form of software functional units and sold or used as an independent product, they can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods in various embodiments of the present invention. The foregoing storage medium includes: various media such as a USB flash drive, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a magnetic disk, or an optical disc that can store program codes.

[0088] On the other hand, the present invention also provides a computer program product, which includes a computer program. The computer program can be stored on a non-transitory computer-readable storage medium. When the computer program is executed by a processor, the computer can execute the preparation method of the variable resistive memory provided by the above-mentioned various methods. The method includes:

[0089] Depositing a bottom electrode layer on a substrate by physical vapor deposition or chemical vapor deposition;

[0090] Depositing silicon dioxide on the bottom electrode layer by chemical vapor deposition;

[0091] Injecting arsenic ions into the silicon dioxide to obtain a selector layer;

[0092] Depositing a resistive change layer on the selector layer, where the resistive change layer includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride;

[0093] Depositing a top electrode layer on the resistive change layer by physical vapor deposition or chemical vapor deposition.

[0094] On the other hand, the present invention also provides a non-transitory computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, it realizes the preparation method of the variable resistive memory provided by the above-mentioned various methods. The method includes:

[0095] Depositing a bottom electrode layer on a substrate by physical vapor deposition or chemical vapor deposition;

[0096] Depositing silicon dioxide on the bottom electrode layer by chemical vapor deposition;

[0097] Injecting arsenic ions into the silicon dioxide to obtain a selector layer;

[0098] Depositing a resistive change layer on the selector layer, where the resistive change layer includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride;

[0099] Depositing a top electrode layer on the resistive change layer by physical vapor deposition or chemical vapor deposition.

[0100] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art can understand and implement it without creative labor.

[0101] Through the description of the above embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus a necessary general hardware platform, and of course, it can also be implemented by hardware. Based on this understanding, the essence of the above technical solution, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods of each embodiment or some parts of the embodiments.

[0102] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of each embodiment of the present invention.

Claims

1. A variable resistor type memory, characterized in that, It includes a bottom electrode layer, a selector layer, a resistive switching layer, and a top electrode layer; The selector layer and the resistive switching layer are disposed between the bottom electrode layer and the top electrode layer; The selector layer is prepared from silicon dioxide doped with arsenic element; The resistive switching layer includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride.

2. The variable resistance type memory according to claim 1, wherein The mass ratio of aluminum nitride in the resistive switching layer is 30%-98%.

3. The variable resistor type memory according to claim 1, characterized in that, The resistive switching layer is obtained by physical vapor deposition or pulsed laser deposition.

4. A method for preparing a variable resistor type memory, characterized in that, It includes: Depositing a bottom electrode layer on a substrate by physical vapor deposition or chemical vapor deposition; Depositing silicon dioxide on the bottom electrode layer by chemical vapor deposition; Injecting arsenic ions into the silicon dioxide to obtain a selector layer; Depositing a resistive switching layer on the selector layer, where the resistive switching layer includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride; Depositing a top electrode layer on the resistive switching layer by physical vapor deposition or chemical vapor deposition.

5. The variable resistor type memory according to claim 4, wherein The preparation method of the selector layer includes: Depositing silicon dioxide on the bottom electrode; Injecting arsenic element into the silicon dioxide to form a selector layer.

6. The variable resistor type memory according to claim 5, wherein The depositing silicon dioxide on the bottom electrode includes: Depositing silicon dioxide on the bottom electrode by chemical vapor deposition.

7. The variable resistance type memory according to claim 4, wherein The material of the bottom electrode layer includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride; The bottom electrode layer is obtained by physical vapor deposition or chemical vapor deposition.

8. The variable resistance type memory according to claim 4, wherein The material of the top electrode layer includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride; The top electrode layer is obtained by physical vapor deposition or chemical vapor deposition.

9. The method for preparing a variable resistor type memory according to claim 4, wherein The depositing a resistive switching layer on the selector layer includes: By physical vapor deposition or pulsed laser deposition, depositing a resistive switching layer material on the selector layer, where the mass ratio of aluminum nitride in the resistive switching layer material is 30%-98%.

10. An electronic device, comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, When the processor executes the program, it implements the preparation method of the variable resistive memory according to any one of claims 4-9.

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