Perovskite solar cell and manufacturing method thereof

Abstract

The invention relates to the field of cells, and discloses a perovskite solar cell and a manufacturing method thereof. The perovskite solar cell comprises: a conductive substrate having a conductive layer; the first electrodes and the second electrodes are arranged on the conducting layer at intervals in the first direction; the perovskite module is arranged between the first electrode and the second electrode and comprises a perovskite functional layer and a top electrode which are sequentially stacked on the conductive layer; the first wire slot, the second wire slot and the third wire slot extend along the second direction and divide the perovskite module into at least one sub-cell together, and when the number of the sub-cells is at least two, the sub-cells are arranged along the first direction and are sequentially connected in series; the perovskite module and the electrode can be separated in space, the problem that a perovskite functional layer below is possibly damaged when the electrode is welded and connected is solved, the perovskite module can be independently and externally packaged, and the problem that a packaging gap exists at the electrode is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of batteries, and particularly to a perovskite solar cell and a manufacturing method thereof. Background Art

[0002] Due to its advantages of being thin and light, thin-film encapsulation has gradually become a more popular encapsulation method for perovskite modules. Thin-film encapsulation usually prints an ink encapsulation layer on the top electrode of a solar cell, and leaves spaces at both ends of the positive and negative electrodes for printing copper paste, so as to lead out electrodes for connecting to an external circuit through subsequent steps such as soldering.

[0003] However, when connecting to an external circuit through the soldering process, the high-temperature processing operation used may potentially damage the underlying perovskite layer. Secondly, the ink encapsulation layer leaves spaces at the electrodes, resulting in poor sealing around the electrodes. Water vapor and oxygen are likely to invade through the gaps at the electrode connection points and degrade the perovskite functional layer, damaging the long-term stability of the module. Summary of the Invention

[0004] In view of this, the present invention provides a perovskite solar cell and a manufacturing method thereof to solve or improve the problems in the related art that the perovskite layer in a solar cell is vulnerable to the influence of welding high temperature and the sealing effect around the electrodes is poor.

[0005] In a first aspect, the present invention provides a perovskite solar cell, comprising:

[0006] A conductive substrate having a conductive layer;

[0007] A first electrode and a second electrode, arranged at intervals on the conductive layer along a first direction and extending along a second direction;

[0008] A perovskite module arranged between the first electrode and the second electrode, comprising a perovskite functional layer and a top electrode stacked in sequence on the conductive layer;

[0009] A first wire groove, a second wire groove and a third wire groove, all extending along the second direction and jointly dividing the perovskite module into at least one sub-cell. When there are at least two sub-cells, the sub-cells are arranged along the first direction and connected in series in sequence;

[0010] Wherein, the first wire groove cuts off the conductive layer, the second wire groove cuts off the perovskite functional layer, a part of the top electrode is filled in the second wire groove, the third wire groove cuts off the top electrode, at least a part of the sub-cell close to the first electrode is arranged in the area of the conductive layer where the first electrode is provided, and the top electrode of the sub-cell close to the second electrode is connected to the area of the conductive layer where the second electrode is provided.

[0011] In an alternative embodiment, the perovskite functional layer includes a perovskite layer, an electron transport layer, and a hole blocking layer that are sequentially stacked on the conductive layer, and the second wire groove cuts through the perovskite layer, the electron transport layer, and the hole blocking layer.

[0012] In an alternative embodiment, the perovskite functional layer further includes a passivation layer, the passivation layer is disposed on the surface of the perovskite layer close to the electron transport layer, and the second wire groove also cuts through the passivation layer.

[0013] In an alternative embodiment, at least one of the hole transport layers is provided between the perovskite functional layer and the conductive layer.

[0014] In an alternative embodiment, the first wire groove also cuts through the hole transport layer;

[0015] And / or, the second wire groove also cuts through the hole transport layer.

[0016] In an alternative embodiment, the third wire groove penetrates in the direction of the conductive layer and penetrates to any layer other than the conductive layer.

[0017] In an alternative embodiment, the perovskite solar cell further includes a packaging layer, and the packaging layer is disposed on the surface of the perovskite module.

[0018] In a second aspect, the present invention also provides a method for manufacturing a perovskite solar cell, which is suitable for the perovskite solar cell as described above, and includes:

[0019] Set a first wire groove to cut through the conductive layer of the conductive substrate;

[0020] Set a perovskite functional layer on the conductive layer, and set a second wire groove to cut through the perovskite functional layer;

[0021] Set a top electrode on the perovskite functional layer to form a perovskite module, and set a third wire groove to cut through the top electrode;

[0022] Set electrode mounting grooves on opposite sides of the perovskite module, and the electrode mounting grooves penetrate through the top electrode and the perovskite functional layer to expose the conductive layer;

[0023] Set a first electrode and a second electrode on the conductive layer in the two electrode mounting grooves respectively;

[0024] Set a packaging layer on the surface of the perovskite module.

[0025] In an alternative embodiment, setting a packaging layer on the surface of the perovskite module includes:

[0026] An inorganic layer and an organic layer are alternately arranged on the surface of the perovskite module.

[0027] In an alternative embodiment, electrode mounting grooves are respectively arranged on opposite sides of the perovskite module, including:

[0028] A trimming area is processed around the perovskite module, and the trimming area sequentially penetrates through the top electrode and the perovskite functional layer, and the electrode mounting grooves are formed in the trimming areas on both sides of the perovskite module;

[0029] For the perovskite solar cell provided by the present invention, by arranging the first electrode and the second electrode on the conductive layer of the conductive substrate, the spatial separation of the perovskite module from the first electrode and the second electrode is realized, avoiding the problem that the perovskite functional layer below may be damaged when the first electrode and the second electrode are welded and connected.

[0030] In addition, separating the first electrode and the second electrode from the perovskite module broadens the process operability of preparing the first electrode and the second electrode. It not only makes it possible to prepare the first electrode and the second electrode at high temperature, but also facilitates the welding of the first electrode and the second electrode.

[0031] Isolating the first electrode and the second electrode from the perovskite module enables the perovskite module to be separately externally encapsulated, avoiding the problem of packaging gaps at the first electrode and the second electrode, greatly improving the packaging effect, significantly enhancing the environmental stability and service life of the perovskite solar cell, and promoting its industrial development.

[0032] The manufacturing method of the perovskite solar cell provided by the present invention, since it is applicable to the perovskite solar cell provided by the present invention, thus simultaneously includes all the above advantages of the perovskite solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0034] Figure 1 It is a schematic structural diagram of a solar cell provided by an embodiment of the present invention;

[0035] Figure 2 It is a schematic structural diagram of another solar cell provided by an embodiment of the present invention;

[0036] Figure 3A cross-sectional view of a solar cell provided by an embodiment of the present invention;

[0037] Figure 4 It is a three-dimensional view of a thin-film encapsulated perovskite solar cell in the related art;

[0038] Figure 5 It is a cross-sectional view of a thin-film encapsulated perovskite solar cell in the related art;

[0039] Figure 6 It is a relative efficiency decay curve graph of the maximum power output point provided in the embodiment of the present invention.

[0040] Explanation of reference numerals:

[0041] 1. Conductive substrate; 101. Conductive layer; 2. Hole transport layer; 3. Perovskite functional layer; 4. Top electrode; 5. First electrode; 6; First wire groove; 7. Second wire groove; 8. Third wire groove; 9. Second electrode; 10. Perovskite module; 11. Sub-cell; 12. Encapsulation layer. Detailed implementation manners

[0042] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0043] In the related art, when connecting an external circuit through a soldering process, the high-temperature processing operation used may have a potential damaging effect on the underlying perovskite layer. Secondly, the ink encapsulation layer leaves a void at the electrode, resulting in a poor sealing effect around the electrode, and water vapor and oxygen are likely to invade through the gap at the electrode connection point and degrade the perovskite functional layer, damaging the long-term stability of the module.

[0044] To solve or improve the problems in the related art that the perovskite layer in a solar cell is easily affected by welding high temperature and the sealing effect around the electrode is poor, the present invention provides a perovskite solar cell and its manufacturing method.

[0045] The following combines Figures 1 to 3 and Figure 6 , and describes the perovskite solar cell provided in the embodiment of the present invention.

[0046] Specifically, the perovskite solar cell includes a conductive substrate 1, a first electrode 5, a second electrode 9, a perovskite module 10, a first wire groove 6, a second wire groove 7, and a second wire groove 7.

[0047] Among them, the conductive substrate 1 has a transparent conductive layer 101. For example, the conductive substrate 1 includes a glass substrate and a conductive layer 101 provided on the glass substrate. The conductive layer 101 can be an ITO layer, that is, the conductive substrate 1 is set as an ITO conductive glass substrate. Of course, the conductive layer 101 can also be tin oxide.

[0048] The first electrode 5 and the second electrode 9 are arranged at intervals along the first direction on the conductive layer 101 and extend along the second direction. That is, both the first electrode 5 and the second electrode 9 are provided on the conductive layer 101, and the first electrode 5 and the second electrode 9 are arranged at intervals along the first direction. For example, the first electrode 5 is a positive electrode and the second electrode 9 is a negative electrode. The first electrode 5 and the second electrode 9 are used to connect the positive and negative electrodes of the electrical appliance, so that the solar cell can supply power to the electrical appliance through the first electrode 5 and the second electrode 9.

[0049] The perovskite module 10 is arranged between the first electrode 5 and the second electrode 9. The perovskite module 10 includes a perovskite functional layer 3 and a top electrode 4 which are sequentially stacked on the conductive layer 101.

[0050] The first wire groove 6, the second wire groove 7 and the third wire groove 8 all extend along the second direction. For example, the second direction intersects with the first direction. Further, the second direction is perpendicular to the first direction. Or rather, the first direction and the second direction are respectively the length direction and the width direction of the solar cell.

[0051] The first wire groove 6, the second wire groove 7 and the third wire groove 8 jointly divide the perovskite module 10 into at least one sub-cell 11. And when the number of sub-cells 11 is at least two, the sub-cells 11 are arranged along the first direction and are connected in series in turn.

[0052] Among them, the first wire groove 6 cuts off the conductive layer 101 to divide the conductive layer 101 into multiple conductive regions, and at least part of the conductive regions can be used as the bottom electrodes of the sub-cells 11.

[0053] For example, taking Figure 3 as an example, the first wire groove 6 corresponds to the sub-cell 11 one by one, and the first wire groove 6 is respectively arranged in the area covered by the corresponding sub-cell 11. In the figure, the number of the first wire grooves 6 is two, and the conductive layer 101 can be divided into three conductive regions. The first electrode 5 and the second electrode 9 are respectively arranged on the conductive regions at both ends. The two adjacent conductive regions on the left are used as the bottom electrodes of the two sub-cells 11. It can be understood that the number of the first wire grooves 6 can also be one or more than two.

[0054] The second wire groove 7 cuts off the perovskite functional layer 3, and part of the top electrode 4 is filled in the second wire groove 7 to connect two adjacent sub-cells 11 or the sub-cell 11 and the second electrode 9 in series.

[0055] For example, referring to Figure 3As shown, the second wire groove 7 is provided on the side of the first wire groove 6 away from the first electrode 5, and the second wire groove 7 is disposed opposite to the conductive region corresponding to the next sub-cell 11. A part of the top electrode 4 is filled in the second wire groove 7. Therefore, the top electrode 4 of the sub-cell 11 can pass through the second wire groove 7 to be electrically connected to the next conductive region. Since the next sub-cell 11 or the second electrode 9 is provided on this conductive region, the part of the top electrode 4 filled in the second wire groove 7 can be electrically connected to the next sub-cell 11 or the second electrode 9.

[0056] The third wire groove 8 cuts off the top electrode 4 to divide the top electrode 4 into a plurality of conductive parts, and the conductive parts respectively serve as the top electrodes of the sub-cells 11.

[0057] For example, referring to Figure 3 As shown, the third wire groove 8 is provided on the side of the second wire groove 7 away from the first wire groove 6, and the third wire groove 8 divides the top electrode 4 into a plurality of conductive parts. For example, the sub-cells 11, the conductive parts and the second wire groove 7 correspond to each other one by one. A part of the conductive part is filled in the second wire groove 7 corresponding to the sub-cell 11 and is electrically connected to the next conductive region.

[0058] Furthermore, at least a part of the sub-cell 11 close to the first electrode 5 is disposed in the region of the conductive layer 101 where the first electrode 5 is provided. That is, at least a part of the sub-cell 11 close to the first electrode 5 is disposed on the conductive region where the first electrode 5 is provided.

[0059] The top electrode 4 of the sub-cell 11 close to the second electrode 9 is connected to the region of the conductive layer 101 where the second electrode 9 is provided. That is, the top electrode of the sub-cell 11 close to the second electrode 9 is connected to the conductive region where the second electrode 9 is provided.

[0060] Specifically, as described above, the second wire groove 7 of the sub-cell 11 close to the second electrode 9 is opposite to the conductive region where the second electrode 9 is located, and the top electrode 4 of the sub-cell 11 close to the second electrode 9 is electrically connected to the conductive region where the second electrode 9 is located through the second wire groove 7, so that the top electrode 4 of the sub-cell 11 can be electrically connected to the second electrode 9 through the conductive region.

[0061] As Figure 3 shown, each conductive part is correspondingly disposed with the corresponding conductive region. The conductive part, the corresponding conductive region, and the perovskite functional layer 3 therebetween form a sub-cell.

[0062] In this embodiment, the first electrode 5 and the sub-cell 11 close to the first electrode 5 are disposed in the same conductive region of the conductive layer 101. Therefore, the first electrode 5 can be electrically connected to the sub-cell 11 close to the first electrode 5 through this conductive region. Adjacent sub-cells 11 can be connected in series through the second wire groove 7 and the part of the top electrode 4 filled in the second wire groove 7.

[0063] The second electrode 9 and the sub-battery 11 close to the second electrode 9 can be connected in series through the second wire groove 7 and the part of the top electrode 4 filled in the second wire groove 7, so that the first electrode 5, multiple sub-batteries 11 and the second electrode 9 can be connected in series in sequence to form a whole.

[0064] In this embodiment, by arranging the first electrode 5 and the second electrode 9 on the conductive layer 101 of the conductive substrate 1, the spatial separation of the perovskite module 10 and the first electrode 5 and the second electrode 9 is achieved, thereby avoiding the problem that the first electrode 5 and the second electrode 9 may damage the underlying perovskite functional layer 3 during welding.

[0065] In addition, separating the first electrode 5 and the second electrode 9 from the perovskite module 10 makes the process operability of preparing the first electrode 5 and the second electrode 9 wider, which not only makes it possible to prepare the first electrode 5 and the second electrode 9 at high temperature, but also facilitates the welding of the first electrode 5 and the second electrode 9.

[0066] The first electrode 5 and the second electrode 9 are isolated from the perovskite module 10, so that the perovskite module 10 can be individually packaged externally, avoiding the problem of packaging gaps between the first electrode 5 and the second electrode 9, greatly improving the packaging effect, significantly enhancing the environmental stability and service life of the perovskite solar cell, and promoting its industrial development.

[0067] In some embodiments provided by the present invention, the perovskite functional layer 3 includes a perovskite layer, an electron transport layer and a hole blocking layer sequentially stacked on the conductive layer 101. The second groove 7 divides the perovskite layer, the electron transport layer and the hole blocking layer.

[0068] In this embodiment, the perovskite layer can efficiently absorb photons and generate electron-hole pairs. The electron transport layer can quickly transfer electrons to the top electrode 4. The hole blocking layer can prevent hole recombination and improve the charge separation efficiency. The second line groove 7 cuts through the perovskite layer, the electron transport layer and the hole blocking layer, so that part of the top electrode 4 can pass through the perovskite layer, the electron transport layer and the hole blocking layer and be electrically connected to the conductive layer 101.

[0069] In some embodiments provided by the present invention, the perovskite functional layer 3 further includes a passivation layer, and the passivation layer is arranged on the surface of the perovskite layer close to the electron transport layer. The second groove 7 also cuts through the passivation layer.

[0070] There are many defects on the surface of perovskite materials, such as uncoordinated ions and vacancies. These defects will become charge recombination centers, reducing the photoelectric conversion efficiency of the battery. Surface passivation can fill these defects by introducing suitable passivants (such as organic molecules, metal ions, etc.), reducing the dangling bonds and uncoordinated ions on the surface, thereby reducing the surface state density, suppressing non-radiative recombination, and improving the charge separation efficiency.

[0071] When the surface defects are reduced, the transport resistance of charges in the perovskite layer decreases.

[0072] Perovskite materials are sensitive to water vapor, oxygen, etc. in the environment and are prone to degradation. The surface passivation layer can act as a barrier to prevent direct contact between external environmental factors and the perovskite layer, slowing down the degradation rate of perovskite materials.

[0073] In some embodiments provided by the present invention, a hole transport layer 2 is provided between the perovskite functional layer 3 and the conductive layer 101.

[0074] In this embodiment, the hole transport layer 2 can efficiently transport holes to the conductive layer 101, reduce recombination losses, and improve the charge collection efficiency.

[0075] In some embodiments provided by the present invention, the first wire groove 6 also cuts through the hole transport layer 2, that is, after the hole transport layer 2 is disposed on the conductive layer 101, the first wire groove 6 is disposed to cut through the hole transport layer 2 and the conductive layer 101 in sequence.

[0076] In some embodiments provided by the present invention, the second wire groove 7 also cuts through the hole transport layer 2. That is, when the perovskite functional layer is cut through by the second wire groove 7, the cutting depth of the second wire groove 7 can be increased so that the second wire groove 7 cuts through the hole transport layer 2 at the same time.

[0077] In some embodiments provided by the present invention, the third wire groove 8 penetrates in the direction of the conductive layer 101 and penetrates to any layer other than the conductive layer 101. Or rather, the third wire groove 8 penetrates in the direction of the conductive layer 101 and can penetrate to any one of the hole blocking layer, electron transport layer, passivation layer, perovskite layer, and hole transport layer 2.

[0078] In some embodiments provided by the present invention, the perovskite solar cell further includes a packaging layer 12, and the packaging layer 12 is disposed on the surface of the perovskite module 10.

[0079] For example, the packaging layer 12 is disposed on both the top surface and the side surface of the perovskite module 10.

[0080] In this embodiment, the first electrode 5 and the second electrode 9 are isolated from the perovskite module 10, enabling the perovskite module 10 to be separately externally encapsulated, avoiding the problem of encapsulation gaps at the first electrode 5 and the second electrode 9, greatly improving the encapsulation effect, significantly enhancing the environmental stability and service life of the perovskite solar cell, and promoting its industrial development.

[0081] Optionally, the encapsulation layer 12 includes an inorganic layer and an organic layer alternately stacked on the surface of the perovskite module. For example, the inorganic layer can be set first and then the organic layer, or the organic layer can be set first and then the inorganic layer.

[0082] In this embodiment, the inorganic layer can provide excellent gas barrier performance, while the organic layer can provide good mechanical flexibility and buffering effect. The combination of the two can not only effectively prevent damage to the perovskite layer by external environmental factors, but also relieve mechanical damage caused by temperature changes or external stresses.

[0083] By using the alternating structure of the inorganic layer and the organic layer, combining the barrier performance of the inorganic layer and the hydrophobicity of the organic layer can provide a more reliable waterproof and moisture-proof effect, effectively protecting the perovskite module 10 from the influence of a humid environment, thereby improving the stability and service life of the perovskite solar cell.

[0084] In an embodiment of the present invention, a method for manufacturing a perovskite solar cell is also provided, which is suitable for manufacturing the above-mentioned perovskite solar cell.

[0085] Specifically, the method for manufacturing a perovskite solar cell includes Step 100 to Step 600.

[0086] Among them, in Step 100, a first wire groove 6 is set to cut off the conductive layer 101 of the conductive substrate 1.

[0087] Specifically, the conductive substrate 1 is set as a conductive transparent substrate. For example, the conductive substrate 1 includes a glass substrate and a conductive layer 101 provided on the glass substrate, and the conductive layer 101 can be an ITO layer or an FTO layer. That is, the conductive substrate 1 is set as an ITO conductive glass substrate or an FTO conductive glass substrate. The first wire groove 6 can divide the conductive layer 101 into a plurality of conductive regions, and at least part of the conductive regions serve as the bottom electrodes of the corresponding sub-cells 11.

[0088] Optionally, the number of the first wire grooves 6 is multiple, the multiple first wire grooves 6 are arranged at intervals along the first direction, and the first wire grooves 6 all extend along the second direction, and the first direction and the second direction intersect. Optionally, a hole transport layer 2 can also be provided on the conductive layer 101, and the first wire groove 6 can also cut off the hole transport layer 2, or of course, the hole transport layer 2 can not be cut off.

[0089] Step 200: Set the perovskite functional layer 3 on the conductive layer 101, and set the second wire groove 7 to penetrate through the perovskite functional layer 3.

[0090] Specifically, set the perovskite functional layer 3 on the surface of the conductive layer 101. If a hole transport layer 2 is provided on the surface of the conductive layer 101, the perovskite functional layer 3 is set on the corresponding hole transport layer 2.

[0091] The perovskite functional layer 3 is provided with the second wire groove 7. The second wire groove 7 penetrates through the perovskite functional layer 3 along the thickness direction of the perovskite functional layer 3. Of course, the second wire groove 7 can alternatively penetrate through the hole transport layer 2. The position of the second wire groove 7 can be positioned based on the position of the first wire groove 6. For example, along the first direction, the second wire groove 7 is spaced on one side of the first wire groove 6.

[0092] Step 300: Set the top electrode 4 on the perovskite functional layer 3 to form the perovskite module 10, and set the third wire groove 8 to penetrate through the top electrode 4.

[0093] Specifically, set the top electrode 4 on the perovskite functional layer 3. The perovskite functional layer 3 and the top electrode 4 form the perovskite module 10. Then set the third wire groove 8 on the surface of the top electrode 4. The third wire groove 8 penetrates through the top electrode 4 along the thickness direction of the top electrode 4, so that the top electrode 4 forms a plurality of conductive parts, and the conductive parts respectively serve as the top electrodes of the corresponding sub-cells 11. Of course, the third wire groove 8 can penetrate in the direction of the conductive layer 101 and penetrate to any layer other than the conductive layer 101.

[0094] The position of the third wire groove 8 can be positioned based on the position of the second wire groove 7. For example, along the first direction, the third wire groove 8 is spaced on one side of the second wire groove 7, so that the first, second, and third wire grooves are arranged in sequence along the first direction.

[0095] Step 400: Set electrode mounting grooves on the opposite sides of the perovskite module 10 respectively. The electrode mounting grooves penetrate through the top electrode 4 and the perovskite functional layer 3 to expose the conductive layer 101.

[0096] Specifically, set the electrode mounting grooves on the surface of the perovskite module 10. The electrode mounting grooves penetrate through the top electrode 4 and the perovskite functional layer 3 in sequence until the conductive layer 101 of the conductive substrate 1 is exposed. The electrode mounting grooves are provided at the two side edges of the perovskite module 10.

[0097] Step 500: Set the first electrode 5 and the second electrode 9 on the conductive layer 101 in the two electrode mounting grooves respectively.

[0098] Specifically, set the first electrode 5 and the second electrode 9 on the conductive layer 101 in the electrode mounting grooves on both sides of the perovskite module 10 respectively.

[0099] Step 600, a packaging layer 12 is provided on the surface of the perovskite module 10.

[0100] Specifically, for example, the packaging layer 12 is provided on both the top surface and the side surfaces of the perovskite module 10.

[0101] In this embodiment, by disposing the first electrode 5 and the second electrode 9 on the conductive layer 101 of the conductive substrate 1, the spatial separation of the perovskite module 10 from the first electrode 5 and the second electrode 9 is achieved, avoiding the problem that the perovskite functional layer 3 below may be damaged when the first electrode 5 and the second electrode 9 are welded and connected.

[0102] In addition, separating the first electrode 5 and the second electrode 9 from the perovskite module 10 broadens the process operability of manufacturing the first electrode 5 and the second electrode 9. This not only makes it possible to fabricate the first electrode 5 and the second electrode 9 at high temperatures, but also facilitates the welding of the first electrode 5 and the second electrode 9.

[0103] Isolating the first electrode 5 and the second electrode 9 from the perovskite module 10 enables the perovskite module 10 to be separately externally packaged, avoiding the problem of packaging gaps at the first electrode 5 and the second electrode 9, greatly improving the packaging effect, significantly enhancing the environmental stability and service life of the perovskite solar cell, and promoting its industrial development.

[0104] The method for manufacturing a perovskite solar cell provided by the present invention is particularly applicable to a tandem module in a pin configuration.

[0105] In some embodiments provided by the present invention, providing the packaging layer 12 on the surface of the perovskite module 10 includes:

[0106] Providing an inorganic layer and an organic layer arranged alternately on the surface of the perovskite module 10.

[0107] Specifically, an inorganic layer can be provided on the surface of the perovskite module 10 first, and then an organic layer can be provided. Alternatively, an organic layer can be provided on the surface of the perovskite module 10 first, and then an inorganic layer can be provided.

[0108] In this embodiment, the inorganic layer can provide excellent gas barrier properties, while the organic layer can provide good mechanical flexibility and buffering effects. The combination of the two can not only effectively prevent damage to the perovskite layer caused by external environmental factors, but also relieve mechanical damage caused by temperature changes or external stresses.

[0109] By using an alternating structure of an inorganic layer and an organic layer, combining the barrier properties of the inorganic layer and the hydrophobicity of the organic layer can provide a more reliable waterproof and moisture-proof effect, effectively protecting the perovskite module 10 from the influence of a humid environment, thereby improving the stability and service life of the perovskite solar cell.

[0110] Optionally, both the organic layer and the inorganic layer are at least three layers, and the organic layer and the inorganic layer are arranged alternately.

[0111] In this embodiment, the organic layer and the inorganic layer are arranged alternately to form a multiple moisture-proof barrier. Even if there are minor defects in a certain layer, other layers can still effectively block the penetration of moisture and oxygen. The interface between the organic layer and the inorganic layer is well bonded, reducing interface defects. The multi-layer structure disperses the interface stress and reduces the risk of delamination or peeling.

[0112] Optionally, the inorganic layer can be one or more of Al2O3, SnO2, SiN x O y (0 < x < 1.33; 0 < y < 2), ZnO, SiO2.

[0113] Optionally, the materials that can be selected for the organic layer include one or more of parylene, ink, polymethyl methacrylate (PMMA), high-density polyethylene (HDPE), and polytetrafluoroethylene (PTFE). Parylene is a p-xylene series polymer, including but not limited to N-type, C-type, D-type, and F-type parylene. The ink layer includes but is not limited to epoxy ink and polyester ink.

[0114] In some embodiments provided by the present invention, an inorganic layer and an organic layer arranged alternately are provided on the surface of the perovskite module 10, including:

[0115] Use atomic layer deposition (ALD) to grow a 100-nm dense Al2O3 layer, and then prepare an alternately arranged PMMA-Al2O3 layer. PMMA is polymethyl methacrylate.

[0116] For example, a PMMA chlorobenzene solution with a weight average molecular weight of 10,000 is coated on the surface of the perovskite module by screen printing, annealed at 100 °C for 5 min to form a film, for example, the thickness of the PMMA film is 2 μm; then an Al2O3 layer is deposited by magnetron sputtering, for example, the thickness of the Al2O3 layer is 100 nm. Finally, a six-layer structure encapsulation layer 12 of dense Al2O3-PMMA-Al2O3-PMMA-Al2O3-PMMA is formed.

[0117] Use chemical vapor deposition (CVD) to grow a 100-nm dense SiO2 layer, and then prepare an alternately arranged ink-Al2O3 layer.

[0118] For example, the ink is coated on the surface of the perovskite module by screen printing, heated and cured at 100 °C for 10 min to form a film, and the thickness of the ink layer can be 10 μm. Then an Al2O3 layer is deposited by magnetron sputtering, and its thickness can be 100 nm. Finally, an external encapsulation with a six-layer structure of dense SiO2-ink-Al2O3-ink-Al2O3-ink is formed.

[0119] In this embodiment, as the bottom layer, the SiO layer provides a flat surface for the subsequent deposition of the ink and the AlO layer, enhancing the interlayer adhesion. The SiO layer has a high hardness, improving the mechanical strength of the encapsulation structure and preventing external physical damage. SiO is chemically inert and does not react with the perovskite material, which can keep the device performance stable. SiO is a good insulator, which can effectively prevent the leakage of charges and the interference of external stray charges.

[0120] In some embodiments provided by the present invention, a top electrode 4 is disposed on the perovskite functional layer 3, including:

[0121] A first indium tin oxide electrode, a copper electrode, and a second indium tin oxide electrode are sequentially deposited on the perovskite functional layer 3. It can be understood that the indium tin oxide electrode is the ITO electrode.

[0122] In this embodiment, the first ITO electrode serves as the bottom layer, which can efficiently transmit current and at the same time protect the perovskite functional layer 3, preventing the preparation process of the copper electrode from damaging the bottom perovskite functional layer 3. The copper electrode serves as the intermediate layer, which can effectively enhance the conductivity of the entire electrode structure. The second ITO electrode can protect the internal copper electrode from the external environment. That is, the multi-layer structure combines the chemical inertness of ITO and the high conductivity of Cu, significantly improving the charge collection and transmission ability of the top electrode 4.

[0123] ITO has a certain hardness and mechanical stability, which can provide a certain support and protection for the top electrode 4. The two ITO electrodes wrap the copper electrode, which can enhance the mechanical strength of the entire top electrode 4, improve the anti-deformation ability and wear resistance of the top electrode 4, and reduce the possibility of cracks or damage in the preparation and use process of the top electrode 4.

[0124] Copper is easily oxidized in the air, and the oxidized copper will increase the resistance of the electrode and reduce the battery performance. The first indium tin oxide electrode and the second indium tin oxide electrode can serve as barrier layers to prevent external oxygen and moisture from contacting the copper electrode, thereby effectively inhibiting the oxidation of copper.

[0125] At the same time, the ITO layer can also prevent the diffusion of copper atoms to the perovskite functional layer 3, avoiding the adverse effects of copper atoms on the structure and performance of the perovskite material, and improving the stability and service life of the battery.

[0126] Optionally, depositing a first indium tin oxide electrode, a copper electrode, and a second indium tin oxide electrode on the perovskite functional layer 3 in sequence includes:

[0127] Using magnetron sputtering to sequentially deposit a 30-nm first indium tin oxide electrode, a 70-nm copper electrode, and a 50-nm second indium tin oxide electrode.

[0128] In this embodiment, the magnetron sputtering process can achieve precise control of the thickness, composition, and structure of the top electrode 4, which is beneficial to large-scale production and industrial applications.

[0129] In some embodiments provided by the present invention, referring to Figure 1 as shown, electrode mounting grooves are provided in the perovskite module 10, including:

[0130] The periphery of the perovskite module 10 is processed to form a trimming area, and the trimming area successively penetrates through the top electrode 4 and the perovskite functional layer 3. Electrode mounting grooves are formed in the trimming areas on both sides of the perovskite module 10.

[0131] In this embodiment, the trimming area is cleaned to the conductive layer 101 of the conductive substrate 1 to ensure that the first electrode 5 and the second electrode 9 can be directly in contact with the conductive layer 101 of the conductive substrate 1. Electrode mounting grooves are formed in the trimming areas on both sides of the perovskite module 10, and the first electrode 5 and the second electrode 9 can be respectively mounted.

[0132] There are often edge effects in the edge part of the perovskite module 10, such as charge accumulation and uneven electric field distribution. These effects may affect the performance of the battery. The setting of the trimming area can remove possible defects or adverse effect areas in the edge part, make the performance of the battery more stable and predictable, and reduce the negative impact of edge effects on the overall performance of the battery.

[0133] Furthermore, the periphery of the perovskite module 10 is processed to form a trimming area, including:

[0134] The periphery of the perovskite module 10 is trimmed using a laser, and the width of the trimming areas on the upper and lower sides is 4 mm, and the width of the trimming areas on the left and right sides is 6 mm. Among them, the trimming areas on the left and right sides can be used as electrode mounting grooves, and the first electrode 5 and the second electrode 9 can be respectively printed on the trimming areas on the left and right sides.

[0135] For example, the size of the first electrode 5 or the second electrode 9 is 300 mm × 4 mm.

[0136] Of course, the electrode mounting groove is not limited to the above form. For example, referring to Figure 2 as shown, in other embodiments provided by the present invention, electrode mounting grooves are respectively provided on the opposite sides of the perovskite module 10, including:

[0137] The periphery of the perovskite module 10 is processed to form a trimming area, and the trimming area successively penetrates through the top electrode 4, the perovskite functional layer 3, and the conductive substrate 1, and then electrode mounting grooves are provided on the opposite sides of the perovskite module 10. Specifically, referring to Figure 2 as shown, along the second direction, the size of the electrode mounting groove is smaller than the size of the perovskite module 10.

[0138] In this embodiment, there are often edge effects in the edge part of the perovskite module 10, such as charge accumulation and uneven electric field distribution. These effects may affect the performance of the battery. The setting of the edge cleaning area can remove the possible defective or adverse effect areas in the edge part, make the performance of the battery more stable and predictable, and reduce the negative impact of the edge effect on the overall performance of the battery.

[0139] In addition, setting the electrode mounting grooves can achieve precise control of the electrode positions, simplify the alignment operation in the subsequent electrode preparation process, and improve the production efficiency.

[0140] Furthermore, process the edge cleaning area around the perovskite module 10. The edge cleaning area sequentially penetrates through the top electrode 4, the perovskite functional layer 3, and the conductive substrate 1. Then, set electrode mounting grooves on the opposite sides of the perovskite module 10, including:

[0141] Use a laser to clean the edges of the perovskite module 10. The cleaning width is 4 mm. The edge cleaning area sequentially penetrates through the top electrode 4, the perovskite functional layer 3, and the conductive substrate 1. Add a cleaning area of 10 mm × 4 mm to the left and right edges of the perovskite module 10 respectively, and clean to the conductive layer 101 as the electrode mounting grooves. The two electrode mounting grooves are respectively used to accommodate the first electrode 5 and the second electrode 9. Optionally, print electrodes of 8 mm × 5 mm in the two electrode mounting grooves using copper paste.

[0142] In some embodiments provided by the present invention, on the conductive layer 101 in the two electrode mounting grooves, set the first electrode 5 and the second electrode 9 respectively, including:

[0143] Use copper paste to print the first electrode 5 or the second electrode 9 in the two electrode mounting grooves respectively.

[0144] In this embodiment, copper is a metal with excellent electrical conductivity and low resistivity. The electrodes printed with copper paste can provide an efficient charge transfer channel, reducing the resistance loss inside the battery. The copper paste can better combine with the conductive substrate 1 to form a good electrical contact. This compatibility can ensure the smooth transfer of charges between the electrode and the conductive substrate 1, reduce the contact resistance, and thus improve the overall electrical performance of the battery.

[0145] In some embodiments provided by the present invention, setting the perovskite functional layer 3 on the hole transport layer 2 includes:

[0146] Step 201, set a perovskite layer on the hole transport layer 2.

[0147] Specifically, the perovskite layer serves as the main light absorption layer.

[0148] Step 202, set an electron transport layer on the perovskite layer.

[0149] Specifically, the presence of the electron transport layer and the hole transport layer 2 ensures that the photo-generated carriers can be quickly and effectively extracted to the corresponding electrodes, thereby improving the overall performance of the battery.

[0150] Step 203, a hole blocking layer is provided on the electron transport layer.

[0151] Specifically, the hole blocking layer is located above the electron transport layer, preventing holes from entering the electron transport layer, and also reducing unnecessary carrier recombination. It can also protect the perovskite layer from the influence of the external environment (such as moisture, oxygen, etc.), improving the long-term stability of the battery.

[0152] In some embodiments provided by the present invention, self-assembled monolayers (SAMs) are prepared on the hole transport layer 2.

[0153] In this embodiment, due to the molecular spacing and electron cloud distribution characteristics of the monolayer, electrons are difficult to penetrate this layer, thereby achieving a good electron blocking effect, enabling holes to be smoothly transported to the hole transport layer 2, significantly improving the charge separation efficiency, reducing the probability of electron-hole recombination, and having a positive effect on increasing the open-circuit voltage of the battery.

[0154] SAMs can fill the tiny defects and unevenness on the surface of the hole transport layer 2, forming a uniform and dense interfacial layer, which not only reduces the number of non-radiative recombination centers but also improves the film-forming quality of the subsequent perovskite layer.

[0155] SAMs can be prepared by simple solution processing methods such as spin coating and dipping, without the need for complex vacuum equipment.

[0156] Optionally, preparing self-assembled monolayers on the hole transport layer 2 includes:

[0157] Coating an ethanol solution of MeO-2PACz on the hole transport layer 2 and annealing.

[0158] Specifically, spin coat an ethanol solution of MeO-2PACz on the hole transport layer 2 and perform an annealing treatment at 100 °C for 10 min.

[0159] In this embodiment, MeO-2PACz, as a self-assembled monolayer material, can effectively prevent electrons from migrating from the perovskite layer to the hole transport layer 2, thereby reducing the recombination of electrons and holes in the hole transport layer 2 and improving the carrier selectivity. Spin coating MeO-2PACz can fill the tiny defects on the surface of the hole transport layer 2, forming a uniform and dense interfacial layer. This helps to reduce the number of non-radiative recombination centers and improve the film-forming quality of the subsequent perovskite layer.

[0160] Among them, MeO-2PACz is [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid.

[0161] In some embodiments provided by the present invention, an electron transport layer is provided on the perovskite layer, including:

[0162] Depositing C on the perovskite layer by vacuum thermal evaporation 60 . Optionally, the thickness of C 60 is 25 nm.

[0163] In this embodiment, the C 60 material has good electron affinity and electron mobility, can effectively capture the electrons generated by the perovskite layer, and quickly transport these electrons. Its unique molecular structure enables electrons to move relatively freely in the C 60 layer, reducing the resistance during electron transport, thereby improving the charge transport efficiency and contributing to enhancing the short-circuit current and photoelectric conversion efficiency of the battery.

[0164] Vacuum thermal evaporation is carried out in a high-vacuum environment, which can avoid the pollution of impurities in the air, thereby preparing a high-quality, uniform and dense C 60 thin film. This high-quality thin film can effectively prevent electrons from diffusing back to the perovskite layer in the reverse direction, and at the same time reduces the defects and trap states in the thin film, improving the efficiency and stability of electron transport.

[0165] In some embodiments provided by the present invention, a hole blocking layer is provided on the electron transport layer, including:

[0166] Growing an SnO2 layer on the electron transport layer by atomic layer deposition (ALD). Optionally, the thickness of the SnO2 layer is 20 nm.

[0167] In this embodiment, atomic layer deposition is a self-limiting thin film growth technique, and only one layer of atoms or molecules is grown in each deposition cycle. By precisely controlling the number of deposition cycles, precise regulation of the thickness of the SnO2 layer can be achieved, and the precision can reach the atomic level. A suitable thickness is crucial for the performance of the hole blocking layer, which can ensure its effective blocking of holes without affecting the transport of electrons, thereby optimizing the performance of the battery.

[0168] The SnO2 layer has high chemical stability and is not easily chemically reacted with surrounding environmental substances (such as water vapor, oxygen, etc.) and other functional layers in the battery. As a hole blocking layer, it can maintain stable performance during long-term use, protect the internal structure of the battery from chemical erosion, and extend the service life of the battery.

[0169] The conduction band energy level of the SnO2 layer allows electrons to pass smoothly from the electron transport layer, while the valence band energy level can effectively block holes, achieving good charge selective transport.

[0170] In some embodiments provided by the present invention, before setting the electron transport layer on the perovskite layer, it further includes:

[0171] Surface passivation of the perovskite layer is performed to form a passivation layer.

[0172] In this embodiment, there are many defects such as uncoordinated ions and vacancies on the surface of the perovskite material. These defects will become charge recombination centers and reduce the photoelectric conversion efficiency of the battery. Surface passivation can fill these defects by introducing suitable passivating agents (such as organic molecules, metal ions, etc.), reduce surface dangling bonds and uncoordinated ions, thereby reducing the surface state density, inhibiting non-radiative recombination, and improving the charge separation efficiency.

[0173] When the surface defects are reduced, the transport resistance of charges in the perovskite layer decreases. Electrons and holes can move more smoothly in the perovskite layer and reach the corresponding transport layers (electron transport layer and hole transport layer 2), thereby improving the charge transport efficiency and contributing to the increase of the short-circuit current of the battery.

[0174] The perovskite material is sensitive to water vapor, oxygen, etc. in the environment and is prone to degradation. The surface passivation layer can act as a barrier to block the direct contact between external environmental factors and the perovskite layer, and slow down the degradation rate of the perovskite material.

[0175] Ions (such as iodide ions, etc.) in the perovskite material may migrate under the action of an electric field, resulting in instability and attenuation of the battery performance. Surface passivation can inhibit ion migration through interaction with the perovskite surface, reduce the performance degradation phenomenon caused by ion migration, and improve the long-term stability and reliability of the battery.

[0176] Optionally, surface passivation of the perovskite layer includes:

[0177] Coat the surface of the perovskite layer with an isopropanol solution of PEAI and perform annealing treatment at 100 °C for 10 min. For example, the isopropanol solution of PEAI can be coated on the surface of the perovskite layer by means of slot coating.

[0178] Among them, PEAI is phenethylammonium hydroiodide.

[0179] In this embodiment, PEAI can effectively fill and passivate the defects on the surface of the perovskite layer, such as dangling bonds, uncoordinated lead ions, etc. These defects are often non-radiative recombination centers and will reduce the device efficiency. After being treated with PEAI, the surface of the perovskite layer becomes smoother and flatter, which is beneficial to the deposition and interface contact of subsequent layers (such as the electron transport layer).

[0180] Annealing treatment at 100 °C helps the PEAI molecules to chemically react with the perovskite surface, forming a more stable passivation layer and further enhancing the thermal stability of the device. 100 °C is a relatively mild temperature that can promote the interaction between PEAI molecules and the perovskite surface without causing decomposition or degradation of the perovskite material. A time of 10 minutes is sufficient to complete the necessary chemical reactions while avoiding the negative impacts that may be brought about by overheating for too long.

[0181] Isopropyl alcohol is selected as the solvent because it has good solubility and volatility, can achieve uniform coating without damaging the perovskite layer, and can dry quickly to avoid residual solvent affecting subsequent processes or device performance.

[0182] Optionally, the passivation layer can also be set as LiF.

[0183] In some embodiments provided by the present invention, a perovskite layer is provided on the conductive layer, including:

[0184] Step 2021, mixing DMF and NMP to form a mixed solvent.

[0185] Specifically, DMF is N,N-dimethylformamide; NMP is N-methylpyrrolidone. Optionally, in the mixed solvent, the volume ratio of DMF:NMP is 6:1.

[0186] Step 2022, dissolving CsI, FAI, PbI2, and MACl in the mixed solvent to form a perovskite precursor solution.

[0187] Specifically, FAI is formamidinium hydroiodide. MACl is methylammonium chloride. Weigh the corresponding molar amounts of CsI, FAI, PbI2, and MACl solids according to the stoichiometric ratio of 0.08:0.92:1.05:0.05, dissolve them in the mixed solvent, and prepare a Cs 0.08 FA 0.92 FAI3PbI3 perovskite precursor solution, and stir this solution at room temperature for 2 h, and filter it before use.

[0188] Step 2023, coating the perovskite precursor solution on the conductive layer and annealing.

[0189] Specifically, spin-coat the perovskite precursor solution on the conductive layer, and use vacuum flash evaporation to treat it for 60 s to assist perovskite film formation. Anneal the substrate at 150 °C for 20 min to obtain a perovskite film.

[0190] In this embodiment, the mixed use of DMF and NMP can significantly improve the dissolution ability of perovskite precursor materials (such as PbI, FAI, etc.). The design of the DMF:NMP volume ratio of 6:1 balances the advantages of the two solvents, making use of the good solubility of DMF and combining the high boiling point characteristics of NMP, which helps to form a high-quality perovskite thin film.

[0191] The perovskite precursor solution is uniformly coated on the conductive layer by spin coating, and then treated by vacuum flash evaporation for 60 seconds. This method can effectively remove the solvent, promote the rapid nucleation of perovskite crystals, and form a dense and uniform thin film.

[0192] Annealing at 150 °C for 20 minutes helps the perovskite crystals to further crystallize and perfect the lattice structure, reduce internal defects and stress, and improve the quality and stability of the thin film.

[0193] In some embodiments provided by the present invention, a method for manufacturing a pin-type tandem perovskite solar cell is also provided, including:

[0194] Step 1: Take a conductive substrate 1 of 30×40 cm. For example, an ITO conductive glass substrate can be selected. The surface of the conductive substrate 1 has a conductive layer 101, such as an ITO layer. Clean it with ultrapure water. Perform two rounds of ultraviolet-ozone treatment on the ITO conductive glass substrate.

[0195] Step 2: Magnetron sputter to deposit NiOx on the ITO conductive glass substrate with a thickness of 10 nm. Along the 40 cm long side, position 10 mm on the left, 6 mm on the right, and draw the first wire grooves 6 at intervals of 6 mm in the middle, a total of 65. Then perform two rounds of ultraviolet-ozone treatment on the NiOx substrate. NiOx serves as the hole transport layer 2.

[0196] Step 3: Set the perovskite functional layer 3, and the perovskite functional layer 3 includes a perovskite layer, an electron transport layer, a passivation layer, and a hole blocking layer. Specifically as follows:

[0197] Slit coat an ethanol solution of MeO-2PACz and anneal at 100 °C for 10 min.

[0198] Subsequently, prepare the perovskite layer. Specifically, slit coat the Cs 0.08 FA 0.92 PbI3 perovskite precursor solution, and use vacuum flash evaporation to treat for 60 s to assist perovskite film formation. Anneal the negative film at 150 °C for 20 min to obtain a perovskite thin film, that is, the perovskite layer.

[0199] After cooling, perform surface passivation treatment on the upper surface of the perovskite thin film. For example, slit coat an isopropanol solution of PEAI and anneal at 100 °C for 10 min. Prepare the electron transport layer. For example, use vacuum thermal evaporation to deposit 25 nm of C60 Fabricate a hole blocking layer. For example, grow a 15-nm SnO2 layer using atomic layer deposition (ALD). Position according to the first wire groove 6 and scribe a second wire groove 7.

[0200] Step 4: Use magnetron sputtering to sequentially deposit three layers of electrodes, namely ITO, Cu, and ITO, to form the top electrode 4. The thicknesses of the three electrode layers are 30 nm, 70 nm, and 50 nm respectively. After completion, position according to the second wire groove 7 and scribe a third wire groove 8. The top electrode 4 and the perovskite functional layer 3 form the perovskite module 10.

[0201] Step 5: Use a laser to trim the periphery of the perovskite module 10. The trimming width for the upper and lower sides is 4 mm, and the trimming width for the left and right sides is 6 mm, trimming until reaching the conductive layer 101 of the ITO conductive glass substrate. Refer to Figure 1 As shown, print electrodes with a size of 300 mm × 4 mm on the ITO conductive glass substrate in the left and right regions using copper paste. There are a total of 65 effective sub-cells 11, and the area utilization rate is approximately 95%.

[0202] Step 6: Use atomic layer deposition (ALD) to grow a 100-nm dense Al2O3 layer, and then fabricate an alternately arranged PMMA-Al2O3 layer. For example, coat a chlorobenzene solution of PMMA with a weight average molecular weight of 10,000 onto the surface of the perovskite module by screen printing, anneal at 100 °C for 5 min to form a film, for example, the PMMA film thickness is 2 μm; then use magnetron sputtering to deposit an Al2O3 layer, for example, the Al2O3 layer thickness is 100 nm. Finally, form a packaging layer 12 with a six-layer structure of dense Al2O3-PMMA-Al2O3-PMMA-Al2O3-PMMA.

[0203] In some embodiments provided by the present invention, another manufacturing method of a pin-type tandem perovskite solar cell is also provided, including:

[0204] Step 1: Take a 30 × 40 cm conductive substrate 1. For example, an ITO conductive glass substrate can be selected. The surface of the conductive substrate 1 has a conductive layer 101, such as an ITO layer. Clean it with ultrapure water. Perform two rounds of ultraviolet-ozone treatment on the ITO conductive glass substrate.

[0205] Step 2: Deposit NiOx on the ITO conductive glass substrate by magnetron sputtering, with a thickness of 10 nm. Along the 40-cm long side, position 10 mm on the left, 6 mm on the right, and scribe 65 first wire grooves 6 at intervals of 6 mm in the middle. Subsequently, perform two rounds of ultraviolet-ozone treatment on the NiOx substrate. NiOx serves as the hole transport layer 2.

[0206] Step 3: Set up the perovskite functional layer 3, which includes a perovskite layer, an electron transport layer, a passivation layer, and a hole blocking layer. Specifically as follows:

[0207] Spin-coat an ethanol solution of MeO-2PACz and anneal at 100 °C for 10 min.

[0208] Subsequently, prepare the perovskite layer. Specifically, spin-coat a Cs 0.08 FA 0.92 PbI3 perovskite precursor solution and use vacuum flash evaporation to assist perovskite film formation for 60 s. Anneal the substrate at 150 °C for 20 min to obtain a perovskite thin film, i.e., the perovskite layer.

[0209] After cooling, perform surface passivation treatment on the upper surface of the perovskite thin film. For example, spin-coat an isopropanol solution of PEAI and anneal at 100 °C for 10 min. Prepare the electron transport layer. For example, deposit 25 nm of C 60 . Prepare the hole blocking layer. For example, grow a 15 nm SnO2 layer using atomic layer deposition (ALD). Locate according to the first wire groove 6 and scribe the second wire groove 7.

[0210] Step 4: Use magnetron sputtering to sequentially deposit three layers of electrodes, ITO, Cu, and ITO, to form the top electrode 4. The thicknesses of the three layers of electrodes are 30 nm, 70 nm, and 50 nm respectively. After completion, locate according to the second wire groove 7 and scribe the third wire groove 8. The top electrode 4 and the perovskite functional layer 3 form the perovskite module 10.

[0211] Step 5: Use a laser to trim the periphery of the perovskite module 10. The trimming width is 4 mm, and the trimming area sequentially penetrates through the top electrode 4, the perovskite functional layer 3, and the conductive substrate 1. Refer to Figure 2 As shown, add 10 mm × 4 mm cleaning areas to the left and right edges of the perovskite module 10 respectively, and clean to the conductive layer 101 to serve as electrode mounting grooves. The two electrode mounting grooves are respectively used to accommodate the first electrode 5 and the second electrode 9. Optionally, print electrodes of 8 mm × 5 mm in the two electrode mounting grooves using copper paste. The total number of effective sub-cells 11 is 65, and the area utilization rate is approximately 95%.

[0212] Step 6: Grow a 100-nm dense Al2O3 layer using atomic layer deposition (ALD), and then prepare an alternating PMMA-Al2O3 layer. For example, spin-coat a PMMA chlorobenzene solution with a weight-average molecular weight of 10,000 onto the surface of the perovskite module, anneal at 100 °C for 5 min to form a film, for example, the PMMA film thickness is 2 μm; then deposit an Al2O3 layer using magnetron sputtering, for example, the Al2O3 layer thickness is 100 nm. Finally, a six-layer structure encapsulation layer 12 of dense Al2O3-PMMA-Al2O3-PMMA-Al2O3-PMMA is formed.

[0213] Reference Figure 4 and Figure 5 As shown, the present invention also provides a comparative example, specifically related to a manufacturing method of a 30×40 cm, pin-type sixty-five-junction series-connected perovskite solar cell, including:

[0214] Step 1: Take a 30×40 cm conductive substrate 1, for example, an ITO conductive glass substrate can be selected. The surface of the conductive substrate 1 has a conductive layer 101, for example, an ITO layer. Clean it with ultrapure water. Perform two rounds of ultraviolet-ozone treatment on the ITO conductive glass substrate.

[0215] Step 2: Deposit NiOx on the ITO conductive glass substrate by magnetron sputtering, with a thickness of 10 nm. Along the 40-cm long side, position 10 mm on the left, 6 mm on the right, and draw the first wire grooves 6 every 6 mm in the middle, for a total of 65. Subsequently, perform two rounds of ultraviolet-ozone treatment on the NiOx substrate. NiOx serves as the hole transport layer 2.

[0216] Step 3: Set the perovskite functional layer 3, which includes a perovskite layer, an electron transport layer, a passivation layer, and a hole blocking layer. Specifically as follows:

[0217] Spin-coat an ethanol solution of MeO-2PACz and anneal at 100 °C for 10 min.

[0218] Subsequently, prepare the perovskite layer. Specifically, spin-coat a Cs 0.08 FA 0.92 PbI3 perovskite precursor solution, and use vacuum flash evaporation to treat for 60 s to assist perovskite film formation. Anneal the bottom plate at 150 °C for 20 min to obtain the perovskite film perovskite layer.

[0219] After cooling, perform surface passivation treatment on the upper surface of the perovskite film. For example, spin-coat an isopropanol solution of PEAI and anneal at 100 °C for 10 min. Prepare the electron transport layer. For example, deposit 25 nm of C 60Prepare a hole blocking layer. For example, grow a 15-nm SnO2 layer using atomic layer deposition (ALD). Locate according to the first wire groove 6 and scribe a second wire groove 7.

[0220] Step 4: Use magnetron sputtering to sequentially deposit three layers of electrodes, namely ITO, Cu, and ITO, to form the top electrode 4. The thicknesses of the three layers of electrodes are 30 nm, 70 nm, and 50 nm respectively. After completion, locate according to the second wire groove 7 and scribe a third wire groove 8. The top electrode 4 and the perovskite functional layer 3 form the perovskite module 10.

[0221] Step 5: Use a laser to trim the periphery of the perovskite module 10, and the trimming width is 4 mm.

[0222] Step 6: Print a layer of polymer ink on the top electrode of the perovskite module 10, leaving 300 mm × 2 mm empty at the positive and negative electrodes, and laminate and cure at 120 °C.

[0223] Step 7: Print copper paste at the empty spaces of the positive and negative electrodes, that is, the electrodes are arranged on the top electrode 4. There are a total of 64 effective sub-cells 11, and the area utilization rate is about 93%.

[0224] What is recorded in the comparative example is the preparation method of the perovskite solar cell in the related technology. Its first electrode 5 and second electrode 9 are arranged on the top electrode 4. When connecting the electrodes to the external circuit through the soldering process, the high-temperature processing operation used may have a potential destructive effect on the perovskite functional layer below the top electrode 4. Secondly, the ink encapsulation layer 12 leaves empty spaces at the electrodes, resulting in a poor sealing effect around the electrodes. Water vapor and oxygen can invade through the gaps at the electrode connection points, thereby degrading the perovskite functional layer and damaging the long-term stability of the module. Finally, taking the module in the pin configuration as an example, the electrode at the positive electrode is connected to the conductive substrate 1 of the adjacent sub-cell 11 through the top electrode 4 of the module. Therefore, one sub-cell 11 below the positive electrode is short-circuited and is not actually utilized.

[0225] By comparing the embodiments of the present application with the comparative example, it can be seen that in the present application, by arranging the electrodes on the conductive substrate 1, the spatial separation of the perovskite module 10 and the electrodes is realized, avoiding the problem that the perovskite functional layer below may be damaged during the electrode welding connection.

[0226] In addition, in the present application, separating the electrodes from the perovskite module 10 makes the process operability of electrode preparation wider. It not only makes it possible to prepare electrodes at high temperatures but also facilitates the welding of the electrodes.

[0227] In this application, the electrode is isolated from the perovskite module 10, enabling the perovskite module 10 to be externally packaged separately, avoiding the problem of packaging gaps at the electrode, greatly improving the packaging effect, significantly enhancing the environmental stability and service life of the perovskite solar cell, and promoting its industrial development.

[0228] In this application, all the sub-cells 11 in the perovskite module 10 are fully utilized, improving the area utilization rate of the perovskite module 10.

[0229] To demonstrate the advantages of the solution provided by the present invention over previous solutions, this application conducted a boiling water bath accelerated aging test on small-sized solar cell modules. The structure of the small-sized module is ITO / NiOx / MeO-2PACz / PSK / PEAI / C 60 / SnO2 / ITO, with an external encapsulation layer 12 having a six-layer structure of Al2O3-PMMA-Al2O3-PMMA-Al2O3-PMMA, and the electrodes are led out by attaching copper tapes.

[0230] The solar cell module prepared by the conventional method is denoted as the original electrode, and the module prepared by the solution provided by the present invention is denoted as the new electrode. The MPPT test scheme is to collect the J-V curve of the module under AM1.5 simulated solar illumination, and then place the module in a boiling water bath for accelerated aging. The module is taken out every 1 h, cooled to room temperature, and its J-V curve is collected. The photoelectric conversion efficiency after aging is compared with the initial value, and finally, the relative efficiency decay curve of the maximum power output point as shown Figure 6 is given.

[0231] The number of effective sub-cells 11 of the original electrode is 5. After accelerated aging, obvious degradation of the perovskite layer at the negative electrode can be seen from the bottom surface, and the photoelectric conversion efficiency after 4 h is only 24% of the initial value. In contrast, the number of effective sub-cells 11 of the new electrode is 6. After accelerated aging, there is no obvious change in appearance, and the photoelectric conversion efficiency after 4 h is 99% of the initial value, with almost no attenuation. This can prove that the module preparation solution provided by the present invention has significant advantages in long-term stability.

[0232] In an embodiment of the present invention, a solar cell is also provided.

[0233] Specifically, the solar cell is manufactured based on the above-mentioned perovskite solar cell manufacturing method.

[0234] The solar cell is manufactured based on the perovskite solar cell manufacturing method and thus has corresponding advantages, which will not be elaborated here.

[0235] Although embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations fall within the scope defined by the appended claims.

Claims

1. A perovskite solar cell, characterized in that, Comprising: A conductive substrate (1) having a transparent conductive layer (101); A first electrode (5) and a second electrode (9) arranged at intervals in a first direction on the conductive layer (101) and extending in a second direction; A perovskite module (10) provided between the first electrode (5) and the second electrode (9), including a perovskite functional layer (3) and a top electrode (4) stacked in sequence on the conductive layer (101); A first wire groove (6), a second wire groove (7), and a third wire groove (8), all of which extend in the second direction and jointly divide the perovskite module (10) into at least one sub-cell (11), and when the sub-cells (11) are at least two, the sub-cells (11) are arranged in the first direction and connected in series in sequence; Wherein, the first wire groove (6) cuts off the conductive layer (101), the second wire groove (7) cuts off the perovskite functional layer (3), a part of the top electrode (4) is filled in the second wire groove (7), the third wire groove (8) cuts off the top electrode (4), at least a part of the sub-cell (11) close to the first electrode (5) is arranged in the area where the first electrode (5) is provided on the conductive layer (101), and the top electrode (4) of the sub-cell (11) close to the second electrode (9) is connected to the area where the second electrode (9) is provided on the conductive layer.

2. The perovskite solar cell according to claim 1, wherein The perovskite functional layer (3) includes a perovskite layer, an electron transport layer, and a hole blocking layer stacked in sequence on the conductive layer (101), and the second wire groove (7) cuts off the perovskite layer, the electron transport layer, and the hole blocking layer.

3. The perovskite solar cell according to claim 2, wherein The perovskite functional layer (3) further includes a passivation layer, the passivation layer is disposed on the surface of the perovskite layer close to the electron transport layer, and the second wire groove (7) also cuts off the passivation layer.

4. The perovskite solar cell according to claim 1, characterized in that, A hole transport layer (2) is provided between the perovskite functional layer (3) and the conductive layer (101).

5. The perovskite solar cell according to claim 4, wherein, The first wire groove also cuts off the hole transport layer; And / or, the second wire groove also cuts off the hole transport layer.

6. The perovskite solar cell according to any one of claims 1-5, characterized in that, The third wire groove (8) penetrates in the direction of the conductive layer (101) and penetrates to any layer other than the conductive layer (101).

7. The perovskite solar cell according to any one of claims 1-5, characterized in that, The perovskite solar cell further includes a packaging layer, and the packaging layer is disposed on the surface of the perovskite module.

8. A method for manufacturing a perovskite solar cell, characterized in that, Suitable for the perovskite solar cell according to any one of claims 1-7, including: Providing a first wire groove (6) to cut off the conductive layer (101) of the conductive substrate (1); Providing a perovskite functional layer (3) on the conductive layer (101), and providing a second wire groove (7) to cut off the perovskite functional layer (3); Providing a top electrode (4) on the perovskite functional layer (3) to form a perovskite module (10), and providing a third wire groove (8) to cut off the top electrode (4); Providing electrode mounting grooves on opposite sides of the perovskite module (10), the electrode mounting grooves penetrate the top electrode (4) and the perovskite functional layer (3) to expose the conductive layer (101); On the conductive layers (101) within the two electrode mounting grooves, a first electrode (5) and a second electrode (9) are respectively provided. An encapsulation layer is provided on the surface of the perovskite module (10).

9. The method for manufacturing a perovskite solar cell according to claim 8, characterized in that, Providing an encapsulation layer on the surface of the perovskite module (10) includes: An inorganic layer and an organic layer are alternately arranged on the surface of the perovskite module (10).

10. The method for manufacturing a perovskite solar cell according to claim 8, characterized in that, Electrode mounting grooves are respectively provided on opposite sides of the perovskite module (10), including: A trimming area is machined around the perovskite module (10), and the trimming area sequentially penetrates through the top electrode (4) and the perovskite functional layer (3), and the electrode mounting grooves are formed in the trimming areas on both sides of the perovskite module (10).

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