Perovskite battery with transverse structure, preparation method of perovskite battery and perovskite battery assembly

Abstract

The invention discloses a perovskite battery with a transverse structure, a preparation method of the perovskite battery and a perovskite battery assembly, and relates to the technical field of perovskite battery preparation. The perovskite cell with the transverse structure comprises a substrate, electrodes and a perovskite light absorption layer, the electrodes are arranged on the surface of the same side of the substrate, the electrodes and the substrate form a groove, and the perovskite light absorption layer is filled in the groove. According to a battery pack obtained by connecting perovskite batteries in series and in parallel, under the condition that a certain sub-battery fails, other batteries can still work continuously, and higher reliability and stability are achieved; and the packaging is more convenient and simpler, and the method has a better application prospect.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite solar cell preparation, and particularly to a perovskite solar cell with a lateral structure, a preparation method thereof, and a perovskite solar cell module. Background Art

[0002] Existing tandem or series-connected perovskite solar cells have relatively high requirements in terms of optical and electrical matching. The number of perovskite solar cells with a conventional structure that can be connected in series in a tandem cell is generally at most three layers. After exceeding three layers, due to the continuous weakening of the incident light intensity, the process difficulty increases significantly, and the cost of the transparent conductive electrode is relatively high, making it difficult to reduce the total cost.

[0003] In view of the above situation, perovskite solar cells with a lateral structure can solve the above problems. However, perovskite solar cells with a lateral structure are still restricted by technical problems in their application and development. For example, the distance between electrodes is too large, and photo-generated carriers recombine before reaching the electrodes, resulting in too low efficiency. Moreover, the preparation process of the lateral perovskite solar cell structure in the prior art is relatively complex and the reliability is poor. The failure of a single sub-cell in the battery module poses a risk of causing the failure of the entire device. Summary of the Invention

[0004] The main object of the present invention is to develop a perovskite solar cell with a lateral structure, which is different from the conventional lateral structure solar cell. This structure has no limitation on the number of stacked battery layers and has an independent power generation ability. In the case of the failure of adjacent sub-cells in the battery pack, the remaining cells can still work.

[0005] To achieve the above object, the present invention provides a perovskite solar cell with a lateral structure, including: a substrate; at least two electrodes disposed on the same side surface of the substrate, the electrodes and the substrate forming a groove; and a perovskite light-absorbing layer filled in the groove.

[0006] In one embodiment, the perovskite light-absorbing layer includes a two-dimensional perovskite thin film.

[0007] In one embodiment, the perovskite light-absorbing layer includes a mesoporous layer and a three-dimensional perovskite material filled in the mesoporous layer; the mesoporous layer includes at least one of a mesoporous titanium oxide layer, a mesoporous aluminum oxide layer, a mesoporous tin oxide layer, a mesoporous zirconium oxide layer, a mesoporous nickel oxide layer, and a mesoporous carbon electrode.

[0008] In one embodiment, the perovskite light-absorbing layer includes a two-dimensional perovskite thin film, a mesoporous layer, and a three-dimensional perovskite material filled in the mesoporous layer.

[0009] In one embodiment, the height of the electrode is 0.5 μm to 2 μm; the width of the electrode is 0.05 μm to 30 μm; and the distance between adjacent electrodes is 0.5 μm to 1000 μm.

[0010] In one embodiment, the electrode is selected from at least one of a metal oxide electrode, a carbon electrode, and a metal electrode.

[0011] In one embodiment, the substrate is selected from any one of glass, quartz, mica, and plastic.

[0012] In one embodiment, the lateral-structured perovskite solar cell further includes: a charge blocking layer disposed between the perovskite light-absorbing layer and the electrode.

[0013] In one embodiment, the width of the charge blocking layer is 10 nm to 60 nm.

[0014] In one embodiment, the charge blocking layer includes at least one of a P-type blocking layer and an N-type blocking layer, wherein the P-type blocking layer is selected from any one of Spiro-OMeTAD, PTAA, NiO X 、Al2O3、Cu2O、CuSCN、CuI、MoO X 、PEDOT、P3HT、BCP; and the N-type blocking layer is selected from any one of TiO2, ZnO, WO3, SnO2, AlN, GaN, BCP, and fullerenes and their derivatives.

[0015] In one embodiment, the lateral-structured perovskite solar cell further includes: a passivation layer disposed between the charge blocking layer and the perovskite light-absorbing layer.

[0016] The present invention also provides a method for manufacturing the lateral-structured perovskite solar cell, characterized in that the method for manufacturing the lateral-structured perovskite solar cell includes the following steps: S10. Form at least two electrodes on the surface of the substrate, and the substrate and the electrodes form a trench; S20. Fill the trench with a two-dimensional perovskite thin film and / or a three-dimensional perovskite material to form a perovskite light-absorbing layer, thereby obtaining a lateral-structured perovskite solar cell.

[0017] In one embodiment, the method for manufacturing the lateral-structured perovskite solar cell includes the following steps: S10. Form at least two electrodes on the surface of the substrate, and the substrate and the electrodes form a trench; S20. Deposit and form a single charge blocking layer on the sidewall of one side of the trench; form a perovskite light-absorbing layer in the trench, thereby obtaining a lateral-structured perovskite solar cell; Alternatively, the method for preparing the perovskite cell with a lateral structure comprises the following steps: S10. Form at least two electrodes on the surface of a substrate, and the substrate and the electrodes form a trench; S20. Deposit and form two charge blocking layers on the side walls on both sides of the trench respectively; form a perovskite light-absorbing layer in the trench to obtain a perovskite cell with a lateral structure; Alternatively, the method for preparing the perovskite cell with a lateral structure comprises the following steps: S10. Form at least two electrodes on the surface of a substrate, and the substrate and the electrodes form a trench; S20. Deposit and form a charge blocking layer on the side wall on one side of the trench; form a perovskite light-absorbing layer in the trench, and deposit and form another charge blocking layer on the side wall on the other side of the trench to obtain a perovskite cell with a lateral structure; In one embodiment, the method for preparing the charge blocking layer comprises the following steps: Deposit photoresist in the trench, expose the side walls of the trench and the glass substrate near the side walls through photolithography, and cover and deposit a dense titanium oxide layer or a dense tin oxide layer on the side walls of the trench by ALD technology to obtain the charge blocking layer; And / or deposit photoresist in the trench, expose the side walls of the trench and the glass substrate near the side walls through photolithography, and drop a nickel oxide nano-dispersion liquid on the side walls of the trench, and dry it to form a dense nickel oxide layer to obtain the charge blocking layer; And / or deposit photoresist in the trench, expose the side walls of the trench and the glass substrate near the side walls through photolithography, and form a dense nickel oxide layer on the side walls of the trench by magnetron sputtering to obtain the charge blocking layer; And / or deposit photoresist in the trench, expose the glass substrate between the perovskite light-absorbing layer and the electrodes through photolithography, fill the side walls of the trench with Spiro material, and cure it to obtain the charge blocking layer; And / or place an electrode made of a metal material in a pure oxygen environment at room temperature until a dense metal oxide layer is formed on the surface of the electrode to obtain the charge blocking layer.

[0018] In one embodiment, the method for preparing the perovskite cell with a lateral structure further comprises the following steps: fill a passivation material between the perovskite light-absorbing layer and the charge blocking layer to form a passivation layer.

[0019] In one embodiment, the method for preparing the passivation layer comprises the following steps: evaporate SAM self-assembled molecules on the surface of the formed charge blocking layer to form a SAM layer to obtain the passivation layer.

[0020] The present invention also provides a perovskite battery module, which includes the perovskite battery with the lateral structure.

[0021] The technical solution in the present invention designs a perovskite battery with a lateral structure, which has no limitation on the number of stacked battery layers and a simpler structure; the battery pack obtained by connecting the perovskite batteries in series and parallel in this application can still work when a certain sub-battery fails, with higher reliability and stability; moreover, the encapsulation is more convenient and simple, only the backlight surface needs to be encapsulated; in addition, the lateral structure of the perovskite battery in the present invention is more suitable for the perovskite battery with a mesoporous structure, the width between the electrodes of a single battery is wider, and the requirements for the process of filling the mesoporous material are lower, while the light-receiving area of the battery is effectively increased. At the same time, in the preparation method of the perovskite battery with the lateral structure in this application, the electrodes and the charge blocking layer are prepared in advance, and the final process is to deposit the perovskite light-absorbing layer, avoiding the problem that the perovskite light-absorbing layer in the processing technology of the conventional structure perovskite battery is easily damaged by subsequent processes. In summary, the perovskite battery with the lateral structure in the present invention has good application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on the structures shown in these drawings.

[0023] Figure 1 It is a schematic structural diagram of the perovskite battery with the lateral structure in Embodiment 1; Figure 2 It is a schematic structural diagram of the perovskite battery with the lateral structure in Embodiment 2; Figure 3 It is a schematic structural diagram of the perovskite battery with the lateral structure in Embodiment 3; Figure 4 It is a schematic structural diagram of the perovskite battery with the lateral structure in Embodiment 4; Figure 5 It is a schematic structural diagram of a partial structure of the perovskite battery module with the lateral structure in Embodiment 5; Figure 6 It is a schematic structural diagram of the perovskite battery module with the lateral structure in Embodiment 6; Figure 7 It is a schematic structural diagram of the perovskite battery with the lateral structure in Embodiment 7; Figure 8 It is a schematic structural diagram of the perovskite battery with the lateral structure in Embodiment 8; Figure 9 Schematic diagram of the structure of the perovskite battery with a lateral structure in Example 9; Figure 10 Current density-voltage curve of the perovskite battery with a lateral structure in Example 1; Figure 11 Current density-voltage curve of the perovskite battery with a lateral structure in Example 2; Figure 12 Current density-voltage curve of the perovskite battery with a lateral structure in Example 3; Figure 13 Current density-voltage curve of the perovskite battery with a lateral structure in Example 4; Figure 14 Current density-voltage curve of the perovskite battery module with a lateral structure in Example 5; Figure 15 Current density-voltage curve of the perovskite battery module with a lateral structure in Example 6; Figure 16 Current density-voltage curve of the perovskite battery with a lateral structure in Example 7; Figure 17 Current density-voltage curve of the perovskite battery with a lateral structure in Example 8; Figure 18 Current density-voltage curve of the perovskite battery with a lateral structure in Example 9. Description of the drawings: 1. Substrate; 21. FTO electrode; 23. Copper electrode; 24. Gold electrode; 25. Aluminum electrode; 31. Dense titanium oxide layer; 32. Dense tin oxide layer; 33. Dense aluminum oxide tunneling layer; 34. Dense nickel oxide layer; 35. Spiro layer; 41. Mesoporous titanium oxide layer filled with perovskite material; 42. Mesoporous zirconium oxide layer filled with perovskite material; 43. Mesoporous nickel oxide layer filled with perovskite material; 44. Mesoporous tin oxide layer filled with perovskite material; 45. Mesoporous aluminum oxide layer filled with perovskite material; 46. Mesoporous carbon electrode filled with perovskite material; 47. Perovskite thin film; 48. Core-shell composite mesoporous layer (titanium oxide shell and titanium core) filled with perovskite material; 6. SAM layer.

[0025] The realization, functional characteristics and advantages of the object of the present invention will be further described with reference to the embodiments and the accompanying drawings. Detailed implementation manners

[0026] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without making creative efforts fall within the protection scope of the present invention.

[0027] It should be noted that if there are directional indications (such as up, down, left, right, front, back...) involved in the embodiments of the present invention, the directional indications are only used to explain the relative positional relationship and movement conditions between components in a specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0028] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In addition, if "and / or" or "and / or" appears throughout the text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or a solution where A and B are satisfied simultaneously. In addition, the technical solutions between various embodiments can be combined with each other, but it must be based on the ability of those of ordinary skill in the art to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the protection scope required by the present invention.

[0029] The technical problem solved by this application is that the existing stacked or tandem perovskite solar cells have high requirements for equipment and processes, and the number of perovskite solar cells with a conventional structure that can be connected in series in the stacked cells is limited; although the conventional lateral structure perovskite solar cells have significantly lower parasitic losses for light during series and parallel connections, there are also related technical problems hindering their further application. For example, the distance between electrodes is too large, and photo-generated carriers are prone to recombination, resulting in too low battery efficiency; for example, the reliability of the device is poor, and when one of the sub-cells fails, there is a risk of causing the entire device to fail.

[0030] In order to solve the above technical problems, a perovskite battery for a series-parallel battery pack is designed with lower preparation process requirements, a simpler structure, better reliability, and higher photoelectric conversion efficiency.

[0031] The present invention provides a perovskite solar cell with a lateral structure. The perovskite solar cell with the lateral structure includes: a substrate; at least two electrodes disposed on the same side surface of the substrate, and grooves are formed between the electrodes and the substrate; a perovskite light-absorbing layer filled in the grooves.

[0032] It should be noted that the perovskite solar cell with the lateral structure in the present invention still maintains the "sandwich" structure of "electrode - photoactive layer - electrode". The cross-section of the conventional solar cell in the present invention is used as the light-receiving surface, and light does not need to pass through the electrodes and can directly reach the perovskite light-absorbing layer, thereby reducing the light dissipation of the electrodes and further increasing the light absorption amount.

[0033] It should also be noted that in the present invention, multiple solar cells can be interconnected through pre-constructed electrodes. The positive electrode of each solar cell and the negative electrode of another solar cell share one electrode to form a series structure; it can also be that each solar cell has a positive electrode and a negative electrode simultaneously to form a series structure; or it can be that some solar cells share electrodes and some solar cells have positive electrodes and negative electrodes simultaneously to jointly form a series structure.

[0034] It should further be noted that when the substrate in the present invention is made of a conductive material, taking FTO glass as an example, the FTO layer in the middle part of the FTO glass is etched away, and the bottom glass layer is retained as the substrate, and the FTO layers on both sides are used as electrodes. Based on the perovskite solar cell with the lateral structure thus obtained, electrodes do not need to be separately prepared by other means. The perovskite light-absorbing layer is confined in the grooves formed by the electrodes and the substrate, and the electrodes on both sides, namely the FTO layers and the glass layer serving as the substrate, have good water resistance, chemical resistance, and resistance to thermal and cold shocks, thereby preventing the perovskite light-absorbing layer from being eroded by water, oxygen, etc. from the bottom and laterally, improving the stability and service life of the perovskite solar cell. During the production process, only the backlight surface of the perovskite solar cell needs to be encapsulated, and the encapsulation process is simpler and the reliability is further improved.

[0035] In one embodiment, the perovskite light-absorbing layer includes a two-dimensional perovskite thin film.

[0036] In one embodiment, the perovskite light-absorbing layer includes a mesoporous layer and a three-dimensional perovskite material filled in the mesoporous layer; the mesoporous layer includes at least one of a mesoporous titanium oxide layer, a mesoporous aluminum oxide layer, a mesoporous tin oxide layer, a mesoporous zirconium oxide layer, a mesoporous nickel oxide layer, and a mesoporous carbon electrode.

[0037] In a preferred embodiment, the mesoporous layer has a core-shell composite structure, and the core-shell composite structure includes a composite structure with a mesoporous metal layer as the core and a mesoporous metal oxide layer as the shell, that is, a mesoporous metal layer is coated on the surface of the mesoporous metal layer. It should be noted that in the mesoporous layer of the core-shell composite structure filled with perovskite materials, the mesoporous metal layer as the core does not directly contact the perovskite materials. The mesoporous metal layer as the core can play a role in reducing the carrier transport resistance, which is beneficial to reducing current loss; while the mesoporous metal oxide layer as the shell plays a role in energy level matching and suppressing carrier recombination, which is beneficial to improving the photoelectric conversion efficiency. It should be noted that a reaction will occur when the perovskite contacts the mesoporous metal layer. Therefore, a layer of metal oxide is required to separate the mesoporous metal layer from the perovskite materials.

[0038] It should be noted that the perovskite light-absorbing layer in the perovskite battery of the present invention can be a thin film structure coated on the surface of the substrate, or a mesoporous structure, that is, the perovskite materials are filled in the mesoporous layer. Compared with the thin film structure, the mesoporous structure is more suitable as the perovskite light-absorbing layer in the present invention. The thickness of the conventional mesoporous layer is relatively large, and the distance between the electrodes in the lateral structure perovskite battery is relatively wide. The mesoporous materials can be deposited in the trench area formed by the electrodes and the substrate through a relatively simple process to form the mesoporous layer. Moreover, the mesoporous structure has lower requirements for surface flatness, thus having lower requirements for processing accuracy, lower process difficulty, and significantly lower processing costs. It should also be noted that the mesoporous layer in the perovskite light-absorbing layer can be composed of a single layer, a double layer or a triple layer of mesoporous layers with different properties. Due to the lateral battery structure, the mesoporous layer is also laterally distributed.

[0039] In one embodiment, the perovskite light-absorbing layer includes a two-dimensional perovskite thin film, a mesoporous layer, and a three-dimensional perovskite material filled in the mesoporous layer. It can be understood that the perovskite light-absorbing layer in this embodiment includes perovskite crystals with a mesoporous structure and perovskite crystals with a layered structure.

[0040] By adopting the above technical solution, the concentration of photo-generated carriers generated by the three-dimensional perovskite material in the mesoporous layer is relatively high, but the disadvantage is that there are more interface defects between the mesoporous layer and the charge blocking layer or the electrode, which is prone to non-radiative recombination and causes greater loss of carriers; while the concentration of photo-generated carriers generated by the two-dimensional perovskite thin film is significantly lower than the former, and the two-dimensional perovskite thin film is closer to the charge blocking layer and receives less light, but the two-dimensional perovskite thin film has fewer interface defects with the charge blocking layer or the electrode. Therefore, in this embodiment, the combination of the two-dimensional perovskite thin film and the three-dimensional perovskite material results in a higher photoelectric conversion efficiency of the perovskite battery.

[0041] In one embodiment, the height of the electrode is 0.5 μm to 2 μm; the width of the electrode is 0.05 μm to 30 μm; the distance between adjacent electrodes is 0.5 μm to 1000 μm.

[0042] It should be noted that the height of the electrode specifically refers to the height of the electrode in the direction perpendicular to the substrate. The height of the electrode can be 0.5 μm, 0.8 μm, 1 μm, 1.5 μm, and 2 μm. The height of the electrode includes but is not limited to the above values, and any value within the above range is acceptable. The width of the electrode specifically refers to the thickness of the electrode in the direction parallel to the substrate surface. The width of the electrode can be 0.05 μm, 0.6 μm, 1 μm, 3 μm, 30 μm. The width of the electrode includes but is not limited to the above values, and any value within the above range is acceptable. The spacing between adjacent electrodes can be 0.5 μm, 1 μm, 100 μm, 200 μm, 1000 μm, including but not limited to the above values, and any value within the above range is acceptable.

[0043] It should also be noted that by defining the relevant parameters of the electrode, the comprehensive performance of the perovskite battery is improved; by defining the height of the electrode, the shadow effect is prevented from occurring and affecting light absorption; by defining the width of the electrode, especially when the electrode is a highly transparent material such as FTO, a good balance between low resistance and high light transmittance of the electrode can be ensured; by defining the spacing between adjacent electrodes, a sufficiently large effective area of the perovskite light-absorbing layer is ensured, while reducing the risk of carrier recombination and reducing recombination losses.

[0044] It should also be noted that in the perovskite battery of the present invention, the heights of the electrode, the perovskite light-absorbing layer, and the charge blocking layer are the same. On the one hand, if the height of the electrode or the charge blocking layer is higher than that of the perovskite light-absorbing layer, it is not conducive to light energy absorption; on the other hand, if the height of the perovskite light-absorbing layer is higher, the carriers generated by the excess perovskite crystals are difficult to collect and are prone to deterioration and decomposition. Therefore, during the preparation process, it is necessary to keep the heights of the electrode, the perovskite light-absorbing layer, and the charge blocking layer the same. The above heights all refer to the heights in the direction perpendicular to the substrate.

[0045] In one embodiment, the electrode is selected from at least one of a metal oxide electrode, a carbon electrode, and a metal electrode. It can be understood that the two electrodes of a single perovskite battery in the present invention can be composed of the same material or different materials.

[0046] In one embodiment, the substrate is selected from any one of glass, quartz, mica, and plastic. It should be noted that if the substrate uses a transparent material and the top is encapsulated with a transparent material or not encapsulated, double-sided light incidence from the bottom and the top can be achieved; if the substrate uses an opaque material, light can still enter through the top.

[0047] In one embodiment, the perovskite battery with a lateral structure further includes: a charge blocking layer, and the charge blocking layer is disposed between the perovskite light-absorbing layer and the electrode.

[0048] It should be noted that in traditional perovskite solar cells, an electron transport layer (ETL) or a hole transport layer (HTL) is usually provided between the perovskite light-absorbing layer and the electrode to promote the efficient transport of electrons or holes; while in the perovskite solar cell with a lateral structure of the present invention, the diffusion length of the carriers in the perovskite light-absorbing layer in the lateral direction is much longer than the diffusion length of a conventional perovskite thin film in the electron movement direction, enabling electrons or holes to directly transport from the perovskite light-absorbing layer to the electrode. Therefore, a hole blocking layer or an electron blocking layer is used in the present invention to inhibit the reverse flow of holes or electrons.

[0049] In one embodiment, the width of the charge blocking layer is 10 - 60 nm. It should be noted that the width of the charge blocking layer specifically refers to the thickness of the charge blocking layer in the direction parallel to the substrate, which can be 10 nm, 20 nm, 50 nm, 55 nm, 60 nm; including but not limited to the above values, and any value within the above range is acceptable. In order to achieve a better collection effect of the perovskite light-absorbing layer on electrons and holes, it is necessary to limit the width of the charge blocking layer.

[0050] In one embodiment, the charge blocking layer includes at least one of a P-type blocking layer and an N-type blocking layer, wherein the P-type blocking layer is selected from any one of Spiro-OMeTAD, PTAA, NiO X 、Al2O3、Cu2O、CuSCN、CuI、MoO X 、PEDOT、P3HT、BCP; the N-type blocking layer is selected from any one of TiO2, ZnO, WO3, SnO2, AlN, GaN, BCP, fullerenes and their derivatives.

[0051] It should be noted that when charge blocking layers are provided between the perovskite light-absorbing layer and the electrodes on both sides in a perovskite solar cell, one of them is a P-type blocking layer and the other is an N-type blocking layer; and in a series-parallel battery pack in the same circuit, the types of the charge blocking layers on the same side in each perovskite solar cell unit are the same.

[0052] In one embodiment, the perovskite solar cell with a lateral structure further includes: a passivation layer, which is provided between the charge blocking layer and the perovskite light-absorbing layer. It can be understood that by providing the passivation layer, defects can be passivated, further inhibiting the reverse flow of holes or electrons at the interface and synergistically improving the photoelectric conversion efficiency of the device.

[0053] The present invention also provides a method for manufacturing the perovskite solar cell with a lateral structure, including the following steps: S10. Form at least two electrodes on the surface of the substrate, and grooves are formed between the substrate and the electrodes; S20. Fill the trench with a two-dimensional perovskite thin film and / or a three-dimensional perovskite material to form a perovskite light-absorbing layer, thereby fabricating a perovskite solar cell with a lateral structure.

[0054] In one embodiment, in step S10, the method for preparing the electrode includes: Perform laser scribing or ion etching on the FTO conductive glass to expose the glass substrate, and electrodes are respectively formed on the FTO layers on both sides of the glass substrate; Alternatively, perform laser scribing or ion etching on the FTO conductive glass to expose the glass substrate, fill the glass substrate with a carbon material and cure it to form an electrode; Alternatively, print a conductive paste on one surface of the substrate and sinter it to form an electrode; Alternatively, deposit a metal film layer on one surface of the substrate to form an electrode.

[0055] In one embodiment, the method for fabricating the perovskite solar cell with a lateral structure includes the following steps: S10. Form at least two electrodes on the surface of the substrate, and the substrate and the electrodes form a trench; S20. Deposit and form a single charge blocking layer on the side wall of one side of the trench; form a perovskite light-absorbing layer in the trench, thereby fabricating a perovskite solar cell with a lateral structure.

[0056] Alternatively, in another embodiment, the method for fabricating the perovskite solar cell with a lateral structure includes the following steps: S10. Form at least two electrodes on the surface of the substrate, and the substrate and the electrodes form a trench; S20. Deposit and form two charge blocking layers on the side walls of both sides of the trench respectively; form a perovskite light-absorbing layer in the trench, thereby fabricating a perovskite solar cell with a lateral structure.

[0057] Alternatively, in another embodiment, the method for fabricating the perovskite solar cell with a lateral structure includes the following steps: S10. Form at least two electrodes on the surface of the substrate, and the substrate and the electrodes form a trench; S20. Deposit and form a charge blocking layer on the side wall of one side of the trench; form a perovskite light-absorbing layer in the trench, and deposit and form another charge blocking layer on the side wall of the other side of the trench, thereby fabricating a perovskite solar cell with a lateral structure.

[0058] It should be noted that the differences between the above embodiments are as follows: the distribution of the charge blocking layer in the perovskite solar cell and the manufacturing process of the perovskite solar cell are different. For details, refer to the embodiments of the present invention.

[0059] In one embodiment, the method for preparing the charge blocking layer includes the following steps: Deposit photoresist in the trench, expose the sidewalls of the trench and the glass substrate near the sidewalls by lithography, and cover and deposit a dense titanium oxide layer or a dense tin oxide layer on the sidewalls of the trench by ALD technology to obtain a charge blocking layer.

[0060] In one embodiment, the method for preparing the charge blocking layer includes the following steps: Deposit photoresist in the trench, expose the sidewalls of the trench and the glass substrate near the sidewalls by lithography, drop a nickel oxide nano-dispersion on the sidewalls of the trench, and dry it to form a dense nickel oxide layer to obtain a charge blocking layer.

[0061] In one embodiment, the method for preparing the charge blocking layer includes the following steps: Deposit photoresist in the trench, expose the sidewalls of the trench and the glass substrate near the sidewalls by lithography, and form a dense nickel oxide layer on the sidewalls of the trench by magnetron sputtering to obtain a charge blocking layer.

[0062] In one embodiment, the method for preparing the charge blocking layer includes the following steps: Deposit photoresist in the trench, expose the glass substrate between the perovskite light-absorbing layer and the electrode by lithography, fill the sidewalls of the trench with Spiro material, and cure it to obtain a charge blocking layer.

[0063] In one embodiment, the method for preparing the charge blocking layer includes the following steps: Place the electrode made of metal material in a pure oxygen environment at room temperature until a dense metal oxide layer is formed on the surface of the electrode to obtain a charge blocking layer.

[0064] It should be noted that the charge blocking layer in the above embodiments includes a P-type blocking layer and an N-type blocking layer. The above embodiments only limit the process and method for preparing the charge blocking layer, and do not limit the specific material types that make up the charge blocking layer. Any material that can be applied to a perovskite solar cell to block charges or holes and uses the preparation method in the above embodiments is acceptable.

[0065] In one embodiment, the method for preparing the perovskite solar cell with a lateral structure further includes the following steps: Fill a passivation material between the perovskite light-absorbing layer and the charge blocking layer to form a passivation layer.

[0066] In one embodiment, the method for preparing the passivation layer includes the following steps: Evaporate and deposit a SAM layer on the surface of the formed charge blocking layer to obtain a passivation layer.

[0067] The present invention also provides a perovskite solar cell module, and the perovskite solar cell module includes the perovskite solar cell with a lateral structure.

[0068] It should be noted that in the related art, a perovskite battery module with a horizontal structure is disclosed, in which the perovskite layer is formed by cross-interleaved arrangement of two-dimensional perovskite and three-dimensional perovskite. One two-dimensional perovskite unit and one three-dimensional perovskite unit constitute a sub-battery unit. This technical solution is equivalent to connecting the perovskite layers of all sub-batteries in series. A major technical problem of this technical solution is that perovskite is an ionic conductor. After the temperature rises under illumination, ion exchange will occur between the two-dimensional and three-dimensional perovskites, which has the risk of causing the perovskite layer to deteriorate and fail. Moreover, the failure of the sub-batteries in the above structure has the risk of causing the entire device to fail. In the present application, the perovskite battery units are connected in parallel or in series through electrodes, and at the same time, the electrodes can also prevent ion exchange from occurring in the perovskite materials of the connected batteries, and the reliability and stability are better.

[0069] It should also be noted that the perovskite solar cell and battery module device with a horizontal structure in the present application can also be used as the power supply of a sensor. Since the voltage is proportional to the number of series connections, under the condition of similar current magnitudes, the horizontally connected series device can provide a high voltage within a very small width range, so as to supply some sensors that require high voltage.

[0070] The following further illustrates the present invention through specific embodiments: The raw materials used in the embodiments of the present invention are all commercially available, and the present invention does not impose any restrictions on the sources of the raw materials.

[0071] In the embodiments of the present invention, the two-dimensional perovskite thin film and the three-dimensional perovskite material both use the same perovskite precursor solution. The preparation method of the perovskite precursor solution is as follows: 137 mg of FAI, 461 mg of PbI2, 13.5 mg of MACl, and 13 mg of CsI are mixed and dissolved in 1 mL of a DMF / DMSO mixed solvent, and the volume ratio of DMF / DMSO is 4:1 to obtain a perovskite solution with a concentration of 1 M. This solution is stirred at room temperature for 6 hours for later use. And the dosage of the perovskite precursor solution is 1 μL.

[0072] The two-dimensional perovskite thin film in the embodiments of the present invention is prepared by directly coating the perovskite precursor solution on the surface of the substrate with chlorobenzene as an antisolvent and annealing at 170 °C for 15 minutes; the three-dimensional perovskite material is prepared by coating the perovskite precursor solution on the surface of a mesoporous framework (including a mesoporous alumina layer, a mesoporous titanium oxide layer, etc.) with chlorobenzene as an antisolvent and annealing at 170 °C for 15 minutes.

[0073] The porosity of the mesoporous oxide in the three-dimensional perovskite material in the embodiments of the present invention is about 60% - 70%.

[0074] In the SAM self-assembled molecular material in the embodiment of the present invention, hexamethylene diisocyanate is adopted, and the corresponding evaporation coating process includes: heating 1 ml of hexamethylene diisocyanate at 120 °C in a nitrogen atmosphere for slow volatilization, and placing a perovskite device 5 cm above it, and the temperature of the device is maintained at 50 °C.

[0075] Example 1 The preparation method of the perovskite battery with a lateral structure in Example 1 includes the following steps: S1. Using the method of gallium ion etching, etch away the FTO layer on the surface of the cleaned FTO conductive glass (the thickness of the FTO layer of the FTO conductive glass is 600 nm) according to a predetermined pattern to expose the glass layer as a substrate, and obtain a groove with a width of 5 microns and the FTO on both sides of the groove; S2. Deposit a layer of photoresist in the groove to completely cover the groove, adjust the photolithography angle to be inclined to the substrate for etching, and only expose the FTO on one side of the groove and the adjacent substrate, and deposit a dense titanium oxide layer with a width of 30 nm by ALD technology as a charge blocking layer; S3. Cover the photoresist in the groove again, adjust the photolithography angle to be perpendicular to the substrate for etching, expose the substrate adjacent to the dense titanium oxide layer, obtain a space with a width of 700 nm, and fill it with nano titanium oxide particles to form a mesoporous titanium oxide layer with a width of 700 nm; S4. Cover the photoresist in the groove again, adjust the photolithography angle for etching, expose the substrate adjacent to the mesoporous titanium oxide, obtain a space with a width of 2 μm, and fill it with nano alumina particles to form a mesoporous alumina layer with a width of 2 μm; S5. Cover the photoresist in the groove again, adjust the photolithography angle, expose the remaining substrate in the groove, and fill it with carbon material to form a mesoporous carbon electrode.

[0076] S6. Remove all the photoresist, coat the perovskite precursor solution on the mesoporous titanium oxide layer, the mesoporous alumina layer and the mesoporous carbon electrode, and perform annealing treatment to obtain a perovskite battery with a lateral structure having a mesoporous carbon electrode.

[0077] Refer to Figure 1 , in the perovskite battery in Example 1, the FTO electrode 21 and the mesoporous carbon electrode 46 filled with perovskite material respectively constitute two electrodes; the perovskite light-absorbing layer is filled in the groove, specifically including the mesoporous titanium oxide layer 41 filled with three-dimensional perovskite material, the mesoporous alumina layer 45 filled with three-dimensional perovskite material and the mesoporous carbon electrode 46 filled with perovskite material; wherein, the width of the mesoporous titanium oxide layer 41 is 700 nm, and the width of the mesoporous alumina layer 45 is 2 μm.

[0078] In the perovskite solar cell of Example 1, a charge blocking layer is provided between the FTO electrode 21 and the perovskite light-absorbing layer, specifically a dense titanium oxide layer 31 with a width of 30 nm.

[0079] In this example, a mesoporous carbon electrode is used to further increase the contact area between the electrode and the perovskite active layer, which can promote the rapid extraction and transport of carriers and reduce the interfacial resistance between the electrode and the active layer, thereby improving the fill factor and short-circuit current density of the perovskite solar cell in this example.

[0080] Example 2 The preparation method of the perovskite solar cell with a lateral structure in Example 2 includes the following steps: S1. Using the method of gallium ion etching, etch away the FTO layer on the surface of the cleaned FTO conductive glass (the thickness of the FTO layer of the FTO conductive glass is 600 nm) according to a predetermined pattern to expose the glass layer as the substrate, obtaining a groove with a width of 3 microns and the FTO on both sides of the groove; S2. Deposit a layer of photoresist in the groove to completely cover the groove, adjust the lithography angle to be inclined to the substrate for etching, only expose the FTO on one side of the groove and the adjacent substrate, and use the ALD technique to deposit a dense titanium oxide layer with a width of 30 nm as the charge blocking layer; S3. Redeposit the photoresist covering in the groove, adjust the lithography angle for etching, only expose the FTO on the other side of the groove and the adjacent substrate, drop a dispersion liquid of nickel oxide nanoparticles with a concentration of 1 mg / mL on the sidewall of the FTO, and dry it at 100 °C for 5 min to form a dense nickel oxide layer with a width of 50 nm as another charge blocking layer; S4. Redeposit the photoresist covering in the groove, adjust the lithography angle for etching, expose the substrate adjacent to the dense titanium oxide layer, obtain a space with a width of 700 nm, and fill it with nano titanium oxide particles to form a mesoporous titanium oxide layer with a width of 700 nm; S5. Redeposit the photoresist covering in the groove, adjust the lithography angle for etching, expose the substrate adjacent to the mesoporous titanium oxide layer, obtain a space with a width of 2 μm, and fill it with nano zirconia particles to form a mesoporous zirconia layer with a width of 2 μm; S6. Redeposit the photoresist covering in the groove, adjust the lithography angle for etching, expose the remaining substrate in the groove, and fill it with nano nickel oxide particles to form a mesoporous nickel oxide layer; S7. Remove all the photoresist and coat the perovskite precursor solution on the surfaces of the mesoporous nickel oxide layer, mesoporous titanium oxide layer, and mesoporous zirconia layer, crystallize and anneal to prepare a perovskite solar cell with a lateral structure.

[0081] Refer to Figure 2, In the perovskite solar cell of Example 2, two FTO electrodes 21 and the substrate 1 form a groove with a width of 3 μm; the groove is filled with a perovskite light-absorbing layer, specifically including a mesoporous titanium oxide layer 41 filled with a three-dimensional perovskite material, a mesoporous zirconium oxide layer 42 filled with a three-dimensional perovskite material, and a mesoporous nickel oxide layer 43 filled with a perovskite material; wherein, the width of the mesoporous titanium oxide layer 41 is 700 nm, and the width of the mesoporous zirconium oxide layer 42 is 2 μm.

[0082] In the perovskite solar cell of Example 2, an N-type charge blocking layer and a P-type charge blocking layer are provided between the FTO electrode 21 and the perovskite light-absorbing layer; wherein, the N-type charge blocking layer is a dense titanium oxide layer 31 with a width of 30 nm; the P-type charge blocking layer is a dense nickel oxide layer 34 with a width of 50 nm.

[0083] Example 3 The preparation method of the perovskite solar cell with a lateral structure in Example 3 includes the following steps: S1. Using the method of gallium ion etching, etch away the FTO on the surface of the cleaned FTO conductive glass (the thickness of the FTO layer is 600 nm) according to a predetermined pattern and expose the glass substrate, and obtain a groove with a width of 100 μm and the FTO on both sides of the groove on the surface of the FTO conductive glass; S2. Deposit a layer of photoresist in the groove to completely cover the groove, adjust the lithography angle for etching, and only expose the FTO on one side of the groove and the adjacent substrate, and deposit a dense titanium oxide layer with a width of 20 nm by ALD technology as the charge blocking layer; S3. Redeposit and cover the photoresist in the groove again, adjust the lithography angle for etching, and only expose the FTO on the other side of the groove and the adjacent substrate, drop a dispersion liquid of nickel oxide nanoparticles with a concentration of 1 mg / mL on the side walls of the exposed FTO in the groove, dry it at 100 °C for 5 min to form a dense nickel oxide layer with a width of about 50 nm as another charge blocking layer; then evaporate and deposit a self-assembled molecular SAM material on the surface of the dense nickel oxide layer to form a SAM layer with a width of about 10 nm as the passivation layer; S4. Redeposit and cover the photoresist in the groove again, adjust the lithography angle for etching, expose the remaining substrate in the groove, coat the perovskite precursor solution on the surface of the substrate and crystallize and anneal to form a perovskite light-absorbing layer, and obtain a perovskite solar cell with a lateral structure.

[0084] Refer to Figure 3 , In the perovskite solar cell of Example 3, two FTO electrodes 21 and the substrate 1 form a groove with a width of 100 μm; the perovskite light-absorbing layer filled in the groove is specifically a perovskite thin film 47.

[0085] In the perovskite solar cell of Example 3, an N-type charge blocking layer and a P-type charge blocking layer are provided between the FTO electrode 21 and the perovskite light-absorbing layer; among them, the N-type charge blocking layer is a dense tin oxide layer 32 with a width of 30 nm; the P-type charge blocking layer is a dense nickel oxide layer 34 with a width of 50 nm, and a SAM layer 6 with a width of 10 nm is further provided between the dense nickel oxide layer 34 and the perovskite light-absorbing layer.

[0086] Example 4 The preparation method of the perovskite solar cell with a lateral structure in Example 4 includes the following steps: S1. Using the method of gallium ion etching, etch away the FTO on the surface of the cleaned FTO conductive glass (FTO layer thickness is 600 nm) according to a predetermined pattern to expose the glass substrate, and obtain a groove with a width of 1.8 microns and the FTO on both sides of the groove on the surface of the FTO conductive glass; S2. Deposit a layer of photoresist in the groove to completely cover the groove, adjust the lithography angle for etching, only expose the FTO on one side of the groove and the adjacent glass substrate, and deposit a dense titanium oxide layer with a width of 50 nm by ALD technology as the charge blocking layer; S3. Redeposit and cover the photoresist in the groove again, adjust the lithography angle for etching, expose the substrate adjacent to the dense titanium oxide layer, obtain a space with a width of 700 nm, and fill it with nano-titanium oxide particles to form a mesoporous titanium oxide layer with a width of 700 nm; S4. Redeposit and cover the photoresist in the groove again, adjust the lithography angle for etching, expose the substrate adjacent to the mesoporous titanium oxide layer, obtain a space with a width of 1 μm, coat the perovskite precursor solution on the 1-μm-wide substrate and the 700-nm-wide mesoporous titanium oxide layer, crystallize and anneal to prepare the perovskite light-absorbing layer; S5. Redeposit and cover the photoresist in the groove again, adjust the lithography angle for etching, expose the remaining unfilled substrate with a width of about 50 nm in the groove, fill the Spiro material to form a Spiro layer with a width of about 50 nm as another charge blocking layer, and remove all the photoresist to complete the device preparation.

[0087] Refer to Figure 4 In the perovskite solar cell of Example 4, two FTO electrodes 21 and the substrate 1 form a groove with a width of 1.8 μm; the groove is filled with a perovskite light-absorbing layer, which specifically includes a mesoporous titanium oxide layer 41 filled with a three-dimensional perovskite material and a perovskite thin film 47; among them, the width of the mesoporous titanium oxide layer 41 is 700 nm, and the width of the perovskite thin film 47 is 1 μm.

[0088] In the perovskite solar cell of Example 4, an N-type charge blocking layer and a P-type charge blocking layer are provided between the FTO electrode 21 and the perovskite light-absorbing layer; among them, the N-type charge blocking layer is a titanium oxide dense layer 31 with a width of 50 nm; the P-type charge blocking layer is a Spiro layer 35 with a width of 50 nm.

[0089] Example 5 The preparation method of the perovskite solar cell module with a lateral structure in Example 5 includes the following steps: S1. Using the method of gallium ion etching, etch away the FTO on the surface of the cleaned FTO conductive glass (the FTO layer thickness is 600 nm) according to a predetermined pattern to expose the glass layer as the substrate, obtaining a groove with a width of 3 microns and the FTO on both sides of the groove. Twelve identical grooves arranged in the same direction with the same spacing are formed on the surface of the same FTO conductive glass, and the spacing between adjacent grooves, that is, the width of the FTO on both sides of the groove, is controlled to be 100 nm.

[0090] S2. Deposit a layer of photoresist in the groove to completely cover the groove, adjust the lithography angle and etch the substrate, only expose the FTO on the same side of the groove and the adjacent substrate, and deposit a titanium oxide dense layer with a width of 30 nm by ALD technology as the charge blocking layer; S3. Redeposit the photoresist covering the groove, adjust the lithography angle for etching, expose the substrate adjacent to the titanium oxide dense layer, form a space with a width of 700 nm, and fill the space with nano-titanium oxide particles to form a mesoporous titanium oxide layer; S4. Redeposit the photoresist covering the groove, adjust the lithography angle for etching, expose the substrate adjacent to the mesoporous titanium oxide layer, obtain a space with a width of 2 μm, fill it with nano-aluminum oxide particles, and obtain a mesoporous aluminum oxide layer with a width of 700 nm; S5. Redeposit the photoresist covering the groove, adjust the lithography angle for etching, expose the remaining substrate with a width of about 270 nm, and fill it with carbon material to form a carbon electrode with a width of about 270 nm.

[0091] S6. Remove all the photoresist, and coat the perovskite precursor solution on the surfaces of the mesoporous titanium oxide layer, the mesoporous aluminum oxide layer and the mesoporous carbon electrode, crystallize and anneal to prepare a mesoporous perovskite lateral module with a carbon electrode.

[0092] Figure 5 For a perovskite solar cell unit in the mesoporous perovskite lateral module with a carbon electrode in Example 5, refer to Figure 5, in the perovskite solar cell unit of Example 5, the FTO electrode 21 and the mesoporous carbon electrode 46 filled with the three-dimensional perovskite material respectively form two electrodes; the trench is filled with a perovskite light-absorbing layer, specifically including a mesoporous titanium oxide layer 41 filled with the three-dimensional perovskite material, a mesoporous aluminum oxide layer 45 filled with the three-dimensional perovskite material, and a mesoporous carbon electrode 46 filled with the three-dimensional perovskite material; wherein, the width of the mesoporous titanium oxide layer 41 is 700 nm, and the width of the mesoporous aluminum oxide layer is 2 μm.

[0093] In the perovskite solar cell of Example 5, an N-type charge blocking layer is provided between the FTO electrode 21 and the perovskite light-absorbing layer. The N-type charge blocking layer is a dense titanium oxide layer 31 with a width of 30 nm.

[0094] The perovskite lateral component in Example 5 is composed of Figure 5 a total of 12 perovskite solar cell units shown in series with each other by the FTO electrodes 21.

[0095] Example 6 The preparation method of the perovskite solar cell with a lateral structure in Example 6 includes the following steps: S1. Print conductive copper paste on the surface of quartz glass to form a copper electrode with a width and height of 1 μm. S2. Print nano-titanium oxide slurry on the adjacent glass surface of the copper electrode along the first direction to form a mesoporous titanium oxide layer with a width and height of 1 μm. S3. Print nano-zirconium oxide slurry on the adjacent glass surface of the mesoporous titanium oxide layer along the first direction to form a mesoporous zirconium oxide layer with a height of 1 μm and a width of 3 μm. S4. Print carbon electrode slurry on the adjacent glass surface of the mesoporous zirconium oxide layer along the first direction to form a mesoporous carbon electrode with a height of 1 μm and a width of 30 μm; the copper electrode and the mesoporous carbon electrode form two electrodes of the perovskite solar cell, and the glass between the copper electrode and the mesoporous carbon electrode forms the substrate.

[0096] S5. Coating the perovskite precursor solution on the surfaces of the mesoporous titanium oxide layer, the mesoporous zirconium oxide layer and the mesoporous carbon electrode, crystallizing and annealing to obtain a perovskite solar cell with a lateral structure.

[0097] It should be noted that repeating the operations of S1-S5 along the first direction can form a series component, that is, the mesoporous carbon electrode is adjacent to the copper electrode of another cell.

[0098] Figure 6 For a perovskite solar cell unit in the perovskite solar cell component of Example 6, the mesoporous perovskite lateral component in Example 6 contains 2 Figure 6 perovskite solar cell units shown.

[0099] Refer to Figure 6, in the perovskite solar cell unit of Example 6, the copper electrode 23 and the mesoporous carbon electrode 46 filled with the three-dimensional perovskite material form two electrodes; the perovskite light-absorbing layer specifically includes a mesoporous titanium oxide layer 41 filled with the three-dimensional perovskite material, a mesoporous zirconium oxide layer 42 filled with the three-dimensional perovskite material, and a mesoporous carbon electrode 46 filled with the three-dimensional perovskite material; wherein, the width of the mesoporous titanium oxide layer 41 is 1 μm, the width of the mesoporous zirconium oxide layer 42 is 3 μm, and the width of the mesoporous carbon electrode 46 is 30 μm.

[0100] Example 7 The preparation method of the perovskite solar cell with a lateral structure in Example 7 includes the following steps: S1. Evaporate and deposit a gold electrode and an aluminum electrode on the surface of the plastic plate through a mask template respectively, control the distance between the gold electrode and the aluminum electrode to be about 50 μm, and the height to be about 1.5 μm, to obtain a groove with the plastic plate as the substrate, the gold electrode and the aluminum electrode as the electrodes respectively, and the width of about 50 μm; S2. Place the plastic plate with the formed electrodes in a dry oxygen environment at room temperature for 1 hour, with the oxygen content ≥ 99%, and a dense aluminum oxide tunneling layer is formed on the surface of the aluminum electrode as a charge blocking layer; S3. Evaporate and deposit perovskite between the two electrodes, and the perovskite layer is prepared by stepwise deposition. For the deposition of the lead halide layer, a total of 500 mg of the powder mixture of PbI2, CsI, and PbCl2 with a mass ratio of 5:1:5 is put into a crucible, and deposition starts at a vacuum of 7×10 -3 Pa at a rate of 1 Å per second, and the program stops after depositing a lead halide thin film with a thickness of 700 nm. Then, the substrate is transferred to another vacuum chamber to evaporate and deposit FAI, and deposition of FAI starts at a pressure lower than 1×10 -2 Pa. The evaporation thickness of FAI is about 500 nm. After the deposition of FAI, the perovskite thin film is annealed in ambient air at 170 °C for 15 minutes. The preparation of the lateral device is completed.

[0101] In the perovskite solar cell with a lateral structure prepared in Example 7, there is an obvious work function difference between the two electrodes, which will spontaneously cause electrons and holes to migrate to the aluminum electrode and the gold electrode respectively, and the aluminum oxide tunneling layer on the aluminum surface can inhibit interface recombination.

[0102] Figure 7 For the perovskite solar cell in Example 7, refer to Figure 7 , in the perovskite solar cell of Example 7, the gold electrode 24 and the aluminum electrode 25 form two electrodes; the perovskite light-absorbing layer is specifically a perovskite thin film 47.

[0103] In the perovskite solar cell of Example 7, a P-type charge blocking layer is provided between the aluminum electrode 25 and the perovskite light-absorbing layer, and the N-type charge blocking layer is a dense aluminum oxide tunneling layer 33.

[0104] Example 8 The preparation method of the perovskite battery with a lateral structure in Example 8 includes the following steps: S1. Using the method of gallium ion etching, etch away the FTO on the surface of the cleaned FTO conductive glass (the thickness of the FTO layer is 600 nm) according to a predetermined pattern to expose the glass substrate, and obtain a groove with a width of 600 μm and the FTO on both sides of the groove on the surface of the FTO conductive glass; S2. Deposit a layer of photoresist in the groove to completely cover the groove, adjust the lithography angle for etching, and only expose the FTO on one side of the groove and the adjacent substrate. Use the ALD technology to deposit a dense tin oxide layer with a width of 30 nm as the charge blocking layer; S3. Redeposit the photoresist covering the groove again, adjust the lithography angle for etching, and only expose the FTO on the other side of the groove and the adjacent substrate. Magnetron sputter nickel oxide on the side wall surface of the exposed FTO in the groove to form a dense nickel oxide layer with a width of about 50 nm as another charge blocking layer; then evaporate and deposit a self-assembled molecule SAM material on the surface of the dense nickel oxide layer to form a SAM layer with a width of about 10 nm as the passivation layer; S4. Redeposit the photoresist covering the groove again, adjust the lithography angle for etching, expose the substrate adjacent to the dense tin oxide layer, obtain a space with a width of 1 μm, and fill nano-tin oxide particles in this space to form a mesoporous tin oxide layer with a width of 1 μm; S5. Redeposit the photoresist covering the groove again, adjust the lithography angle for etching, expose the remaining unfilled substrate in the groove, coat the perovskite precursor solution on the surface of the substrate and the mesoporous tin oxide layer and crystallize and anneal to form a perovskite light-absorbing layer, and remove all the photoresist to obtain a perovskite battery with a lateral structure.

[0105] Refer to Figure 8 , the perovskite light-absorbing layer in Example 8 is filled with a three-dimensional perovskite material and a two-dimensional perovskite thin film.

[0106] Refer to Figure 8 , in the perovskite battery in Example 8, two FTO electrodes 21 and the substrate 1 form a groove with a width of 600 μm; the groove is filled with a perovskite light-absorbing layer, specifically including a mesoporous tin oxide layer 44 filled with a three-dimensional perovskite material and a perovskite thin film 47; wherein, the width of the mesoporous tin oxide layer 44 is 1 μm.

[0107] In the perovskite solar cell of Example 8, an N-type charge blocking layer and a P-type charge blocking layer are provided between the FTO electrode 21 and the perovskite light-absorbing layer; among them, the N-type charge blocking layer is a dense tin oxide layer 32 with a width of 30 nm; the P-type charge blocking layer is a dense nickel oxide layer 34 with a width of 50 nm; a SAM layer 6 with a width of 10 nm is also provided between the P-type charge blocking layer and the perovskite light-absorbing layer.

[0108] Example 9 The preparation method of the perovskite solar cell with a lateral structure in Example 9 includes the following steps: S1. Two FTO electrodes with a height and width of 1 μm are formed on the glass surface by magnetron sputtering and a mask template, with a spacing of 1000 μm, to obtain a groove with glass as the substrate, a transparent conductive electrode as the electrode, and a width of about 1000 μm. S2. Print nano-titanium paste on the adjacent glass surface of one of the electrodes to form a mesoporous titanium layer with a width of 500 μm and a height of 1 μm; heat it to 400 °C in a nitrogen atmosphere for sintering treatment to obtain a cured mesoporous titanium layer with a porosity of 50% - 60%; then immerse it in an aqueous solution of titanium tetrachloride with a concentration of 40 mM and react at 70 °C for 30 min to form a mesoporous titanium oxide layer on the surface of the mesoporous titanium layer, obtaining a core-shell composite mesoporous layer structure with a mesoporous titanium core and a mesoporous titanium oxide shell. S3. Print a mesoporous zirconia electrode with a width of 200 μm on the adjacent glass surface of the core-shell composite mesoporous layer structure. S4. Print a mesoporous carbon electrode with a width of 300 μm on the remaining glass surface in the groove, coat the perovskite precursor solution on the surfaces of the core-shell composite mesoporous layer structure, the mesoporous zirconia layer, and the mesoporous carbon electrode, and crystallize and anneal to prepare a perovskite solar cell with a lateral structure.

[0109] Refer to Figure 9 , in the perovskite solar cell of Example 9, the FTO electrode 21 and the mesoporous carbon electrode 46 filled with perovskite material form two electrodes; the groove is filled with a perovskite light-absorbing layer, specifically including a core-shell composite mesoporous layer structure (titanium oxide shell and titanium core) 48 filled with a three-dimensional perovskite material, a mesoporous zirconia layer 42 filled with perovskite material, and a mesoporous carbon electrode 46 filled with perovskite material; among them, the width of the core-shell composite mesoporous layer structure is 500 μm, the width of the mesoporous zirconia layer 42 is 200 μm, and the width of the mesoporous carbon electrode is 300 μm.

[0110] Among them, the core-shell composite mesoporous layer structure (titanium oxide shell and titanium core) 48 is a mesoporous titanium metal layer coated with a mesoporous titanium oxide layer, and the mesoporous metal titanium layer is separated from the perovskite material through the mesoporous titanium oxide layer.

[0111] Performance detection The optoelectronic properties of the laterally structured perovskite solar cells or modules prepared in Examples 1 to 9 were tested respectively. The test results are shown in Table 1 and Figures 10 - 18 .

[0112] Figures 10 - 18 They are the current density-voltage curves of the laterally structured perovskite solar cells or modules prepared in Examples 1 to 9 respectively.

[0113] Table 1

[0114] By analyzing Table 1, it can be obtained that the laterally structured perovskite solar cells or modules prepared in this invention all have good optoelectronic properties.

[0115] It should be noted that although the optoelectronic conversion efficiencies in Examples 6 and 7 in Table 1 are significantly lower than those in other examples, in Example 6, no blocking layer was set and the width of the mesoporous carbon electrode was relatively high, and the preparation process requirements were relatively low, so a perovskite solar cell module containing multiple laterally structured perovskite solar cell units could be efficiently prepared at low cost; in Example 7, a metal electrode with a simpler preparation method was used, and the preparation method of the perovskite light-absorbing layer was also simpler, and a perovskite solar cell module containing multiple perovskite solar cell units could also be efficiently prepared at low cost. By weighing the production cost and product application, Examples 6 and 7 also have certain market application values.

[0116] The above is only an exemplary embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structural transformation made under the technical concept of the present invention by using the content of the specification and drawings of the present invention, or directly / indirectly applied in other related technical fields, is included in the patent protection scope of the present invention.

Claims

1. A perovskite solar cell with a lateral structure, characterized in that, The perovskite solar cell with a lateral structure includes: a substrate; at least two electrodes, which are arranged on the same side surface of the substrate, and grooves are formed between the electrodes and the substrate; a perovskite light-absorbing layer, which is filled in the grooves.

2. The perovskite solar cell with a lateral structure according to claim 1, characterized in that, The perovskite light-absorbing layer includes a two-dimensional perovskite thin film.

3. The perovskite cell with a lateral structure according to claim 1, characterized in that, The perovskite light-absorbing layer includes a mesoporous layer and a three-dimensional perovskite material filled in the mesoporous layer; The mesoporous layer includes at least one of a mesoporous titanium oxide layer, a mesoporous aluminum oxide layer, a mesoporous tin oxide layer, a mesoporous zirconium oxide layer, a mesoporous nickel oxide layer, and a mesoporous carbon electrode.

4. The perovskite solar cell with a lateral structure according to claim 1, wherein the height of the electrode is 0.5 μm to 2 μm; the width of the electrode is 0.05 μm to 30 μm; the distance between adjacent electrodes is 0.5 μm to 1000 μm; and / or, the electrode is selected from at least one of a metal oxide electrode, a carbon electrode, and a metal electrode; and / or, the substrate is selected from any one of glass, quartz, mica, and plastic.

5. The perovskite cell with a lateral structure according to claim 1, characterized in that, The perovskite solar cell with a lateral structure further includes: a charge blocking layer, which is arranged between the perovskite light-absorbing layer and the electrode.

6. The perovskite solar cell with a lateral structure according to claim 5, wherein the width of the charge blocking layer is 10 to 60 nm; And / or, the charge blocking layer includes at least one of a P-type blocking layer and an N-type blocking layer, wherein the P-type blocking layer is selected from Spiro-OMeTAD, PTAA, NiO X , Al2O3, Cu2O, CuSCN, CuI, MoO X , PEDOT, P3HT, BCP; the N-type blocking layer is selected from any one of TiO2, ZnO, WO3, SnO2, AlN, GaN, BCP, fullerenes and their derivatives.

7. The perovskite solar cell with a lateral structure according to claim 5, characterized in that, The perovskite solar cell with a lateral structure further includes: a passivation layer, which is arranged between the charge blocking layer and the perovskite light-absorbing layer.

8. A method for preparing a perovskite solar cell with a lateral structure according to any one of claims 1 to 7, characterized in that, The preparation method of the perovskite solar cell with a lateral structure includes the following steps: S10. Form at least two electrodes on the surface of the substrate, and grooves are formed between the substrate and the electrodes; S20. Fill the grooves with a two-dimensional perovskite thin film and / or a three-dimensional perovskite material to form a perovskite light-absorbing layer, and a perovskite solar cell with a lateral structure is obtained.

9. The preparation method of the perovskite battery with a lateral structure according to claim 8, wherein, In the step S10, the preparation method of the electrode includes: Performing laser scribing or ion etching on the FTO conductive glass to expose the glass substrate, and electrodes are respectively formed on the FTO layers on both sides of the glass substrate; Or, performing laser scribing or ion etching on the FTO conductive glass to expose the glass substrate, filling the glass substrate with a carbon material and curing it to form an electrode; Or, printing a conductive paste on one side surface of the substrate and sintering it to form an electrode; Or, evaporating a metal film layer on one side surface of the substrate to form an electrode.

10. The preparation method of the perovskite battery with a lateral structure according to claim 8, characterized in that, The preparation method of the perovskite solar cell with a lateral structure includes the following steps: S10. Form at least two electrodes on the surface of the substrate, and grooves are formed between the substrate and the electrodes; S20. Deposit a single charge blocking layer on the side wall of one side of the groove; form a perovskite light-absorbing layer in the groove, and a perovskite solar cell with a lateral structure is obtained; Or, The preparation method of the perovskite solar cell with a lateral structure includes the following steps: S10. Form at least two electrodes on the surface of the substrate, and grooves are formed between the substrate and the electrodes; S20. Deposit two charge blocking layers on the side walls of both sides of the groove respectively; form a perovskite light-absorbing layer in the groove, and a perovskite solar cell with a lateral structure is obtained; Or, The preparation method of the perovskite battery with a lateral structure comprises the following steps: S10. Form at least two electrodes on the surface of a substrate, and a groove is formed between the substrate and the electrodes; S20. Deposit a charge blocking layer on the side wall of one side of the groove; form a perovskite light-absorbing layer in the groove, and deposit another charge blocking layer on the side wall of the other side of the groove, thereby obtaining a perovskite battery with a lateral structure.

11. The preparation method of the perovskite battery with a lateral structure according to claim 10, characterized in that, The preparation method of the charge blocking layer comprises the following steps: Deposit photoresist in the groove, expose the side wall of the groove and the glass substrate close to the side wall through photolithography, and cover and deposit a dense titanium oxide layer or a dense tin oxide layer on the side wall of the groove by ALD technology, thereby obtaining the charge blocking layer; and / or, deposit photoresist in the groove, expose the side wall of the groove and the glass substrate close to the side wall through photolithography, drop a nickel oxide nano-dispersion liquid on the side wall of the groove, and dry it to form a dense nickel oxide layer, thereby obtaining the charge blocking layer; and / or, deposit photoresist in the groove, expose the side wall of the groove and the glass substrate close to the side wall through photolithography, and form a dense nickel oxide layer on the side wall of the groove by magnetron sputtering, thereby obtaining the charge blocking layer; and / or, deposit photoresist in the groove, expose the glass substrate between the perovskite light-absorbing layer and the electrode through photolithography, fill the side wall of the groove with Spiro material, and cure it, thereby obtaining the charge blocking layer; and / or, place the electrode made of metal material in a pure oxygen environment at room temperature until a dense metal oxide layer is formed on the surface of the electrode, thereby obtaining the charge blocking layer.

12. The preparation method of the perovskite battery with a lateral structure according to claim 10, wherein, The preparation method of the perovskite battery with a lateral structure further comprises the following steps: Fill a passivation material between the perovskite light-absorbing layer and the charge blocking layer to form a passivation layer.

13. The preparation method of the perovskite battery with a lateral structure according to claim 12, wherein, The preparation method of the passivation layer comprises the following steps: Evaporate SAM self-assembled molecules on the surface of the formed charge blocking layer to form a SAM layer, thereby obtaining the passivation layer.

14. A perovskite battery component, characterized in that, The perovskite battery assembly comprises the perovskite battery with a lateral structure according to any one of claims 1 to 7.

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