A high temperature hot field direct measurement sensor array

Abstract

The application belongs to the technical field of thermal field measurement under high temperature environment, and particularly relates to a high-temperature thermal field direct measurement sensor array. In use, thermal radiation is irradiated on a heat-absorbing layer, the heat-absorbing layer absorbs the thermal radiation and transmits the heat to a high-conductivity micro region, so that a transverse thermoelectric voltage is generated between a first electrode and a second electrode, and the heat flux density at the high-conductivity micro region is calculated according to the transverse thermoelectric voltage; the temperature at the high-conductivity micro region is calculated according to the resistance between a third electrode and a fourth electrode, the heat flux density at the high-conductivity micro region is calibrated through the temperature at the high-conductivity micro region, and the spatial distribution characteristics of the heat flux are inversed by comprehensively considering the heat flux and the temperature at multiple high-conductivity micro regions. The high-temperature thermal field direct measurement sensor array can output the spatial distribution of two modes of heat flux density and temperature, and realize high-precision spatial distribution measurement of the thermal field.

Description

Technical Field

[0001] This invention belongs to the field of thermal field measurement technology under high temperature environment, and particularly relates to a sensor array for direct measurement of high temperature thermal field. Background Technology

[0002] In fields such as nuclear energy, aerospace, and chemical reactors, precise measurement of the local location of high-temperature thermal fields is of vital importance for safe equipment operation, process optimization, and stable control of product quality.

[0003] Traditional thermal field measurement methods often have many limitations. For example, traditional thermal field measurements mainly use a single temperature sensor, which has a relatively slow response speed. Traditional single-point temperature measurement technology cannot fully reflect the distribution characteristics of the thermal field and is easily affected by high-temperature environments, leading to a decrease in measurement accuracy. Moreover, a single temperature sensor cannot distinguish between endothermic and exothermic reactions.

[0004] Another physical quantity that characterizes a thermal field is heat flux density. Heat flux density is somewhat different from temperature. Temperature is a scalar quantity that reflects the result of energy interaction and is difficult to directly reflect the energy transfer process.

[0005] To address this, a sensor array for direct measurement of high-temperature thermal fields is proposed. Summary of the Invention

[0006] The purpose of this invention is to provide a high-temperature thermal field direct measurement sensor array to solve the above-mentioned problems.

[0007] To achieve the above objectives, the present invention provides the following solution:

[0008] A high-temperature thermal field direct measurement sensor array, comprising:

[0009] Matrix;

[0010] Multiple highly conductive micro-regions are located within the substrate and close to the top surface of the substrate. The multiple highly conductive micro-regions are arrayed. A first electrode and a second electrode are respectively disposed on opposite sides of the highly conductive micro-regions. Both the first electrode and the second electrode are located on the top surface of the substrate.

[0011] A heat-absorbing layer is laid on the top surface of the substrate. The heat-absorbing layer is located above the highly conductive micro-region and between the first electrode and the second electrode. The heat-absorbing layer is used to absorb thermal radiation. The absorption of thermal radiation by the heat-absorbing layer causes the highly conductive micro-region, the first electrode and the second electrode to generate a thermoelectric effect.

[0012] Multiple temperature sensor units are disposed on the top surface of the substrate and arranged in an array. Each of the multiple temperature sensor units corresponds to one of the multiple highly conductive micro-regions. A third electrode and a fourth electrode are respectively disposed at both ends of each temperature sensor unit. The temperature sensor unit is used to obtain the temperature at the highly conductive micro-region.

[0013] Preferably, the substrate is made of a weakly conductive single-crystal material.

[0014] Preferably, the thickness of the substrate is 0.1mm-10mm.

[0015] Preferably, the thickness of the highly conductive micro-region is ≤1000nm.

[0016] Preferably, the first electrode and the second electrode are made of Ni / Pt / Au thin film.

[0017] Preferably, the heat-absorbing layer is made of C composite material.

[0018] Preferably, the temperature sensor unit is made of a Pt / Ti double-layer thin film.

[0019] Preferably, the third electrode and the fourth electrode are both made of Au thin film.

[0020] A measurement method for a high-temperature thermal field direct measurement sensor array, comprising the following steps:

[0021] Thermal radiation irradiates the heat-absorbing layer, which absorbs the thermal radiation and transfers the heat to the highly conductive micro-region, thereby generating a transverse thermoelectric voltage between the first electrode and the second electrode. The heat flux density at the highly conductive micro-region is calculated based on the transverse thermoelectric voltage.

[0022] The temperature at the highly conductive micro-region is calculated based on the resistance between the third and fourth electrodes. The heat flux density at the highly conductive micro-region is calibrated using the temperature at the highly conductive micro-region. The spatial distribution characteristics of the heat flux are then derived by combining the heat flux and temperature at multiple highly conductive micro-regions.

[0023] Compared with the prior art, the present invention has the following advantages and technical effects:

[0024] In use, thermal radiation irradiates the heat-absorbing layer, which absorbs the thermal radiation and transfers the heat to the highly conductive micro-region, generating a transverse thermoelectric voltage between the first and second electrodes. The heat flux density at the highly conductive micro-region is calculated based on the transverse thermoelectric voltage. The temperature at the highly conductive micro-region is calculated based on the resistance between the third and fourth electrodes. The heat flux density at the highly conductive micro-region is calibrated using the temperature at the highly conductive micro-region. The spatial distribution characteristics of the heat flux are then derived by combining the heat flux and temperature at multiple highly conductive micro-regions.

[0025] The high-temperature thermal field direct measurement sensor array of the present invention can output the spatial distribution of both heat flux density and temperature, thereby realizing high-precision spatial distribution measurement of the thermal field. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the embodiments will be briefly described below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a top view of the present invention;

[0028] Figure 2 for Figure 1 A magnified view of a section at point A in the middle;

[0029] Figure 3 This is a cross-sectional view of the highly conductive micro-region in this invention;

[0030] Figure 4 The heat flux density distribution measured in this invention is within a 5x5mm spatial range.

[0031] Figure 5 The temperature distribution measured by this invention is within a 5x5mm spatial range;

[0032] Among them, 1 is the substrate; 2 is the highly conductive micro-region; 3 is the temperature sensor unit; 4 is the heat-absorbing layer; 2a is the first electrode; 2b is the second electrode; 3a is the third electrode; and 3b is the fourth electrode. Detailed Implementation

[0033] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0034] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0035] Reference Figures 1 to 3 This invention discloses a high-temperature thermal field direct measurement sensor array, comprising:

[0036] Matrix 1;

[0037] Multiple highly conductive micro-regions 2 are located within the substrate 1 and close to the top surface of the substrate 1. The multiple highly conductive micro-regions 2 are arranged in an array. A first electrode 2a and a second electrode 2b are respectively provided on opposite sides of the highly conductive micro-regions 2. Both the first electrode 2a and the second electrode 2b are located on the top surface of the substrate 1.

[0038] The heat-absorbing layer 4 is laid on the top surface of the substrate 1. The heat-absorbing layer 4 is located above the highly conductive micro-region 2 and between the first electrode 2a and the second electrode 2b. The heat-absorbing layer 4 is used to absorb thermal radiation. The absorption of thermal radiation by the heat-absorbing layer 4 causes the highly conductive micro-region 2, the first electrode 2a and the second electrode 2b to generate a thermoelectric effect.

[0039] Multiple temperature sensor units 3 are arranged in an array on the top surface of the substrate 1. Each temperature sensor unit 3 corresponds to a different highly conductive micro-region 2. A third electrode 3a and a fourth electrode 3b are respectively provided at both ends of the temperature sensor unit 3. The temperature sensor unit 3 is used to obtain the temperature at the highly conductive micro-region 2.

[0040] Further optimization of the scheme: the material of substrate 1 is a weakly conductive single crystal material.

[0041] Specifically, the substrate 1 is made of one of the following materials: 4H-SiC single crystal, 6H-SiC single crystal, or GaN single crystal. The top surface of the substrate 1 is atomically polished, and the room temperature resistivity of the substrate 1 is greater than or equal to 1 ohm-cm.

[0042] Further optimization of the scheme resulted in a substrate thickness of 0.1mm-10mm.

[0043] Further optimization of the scheme resulted in a thickness of ≤1000nm for the highly conductive micro-region 2.

[0044] Multiple highly conductive micro-regions were formed by ion implantation combined with post-annealing.

[0045] The highly conductive micro-region 2 is set as a rectangle.

[0046] Further optimization of the design involves using Ni / Pt / Au thin films for the first electrode 2a and the second electrode 2b.

[0047] The design was further optimized so that the heat-absorbing layer 4 is made of C composite material.

[0048] The thickness of the heat-absorbing layer 4 is 100 nanometers to 5000 nanometers.

[0049] Further optimization of the design resulted in temperature sensor unit 3 being made of a Pt / Ti double-layer thin film.

[0050] Temperature sensor unit 3 is configured as a rectangle.

[0051] The design was further optimized so that the third electrode 3a and the fourth electrode 3b are both made of Au thin film.

[0052] The thickness of the third electrode 3a and the fourth electrode 3b is approximately 200 nanometers.

[0053] A measurement method for a high-temperature thermal field direct measurement sensor array, comprising the following steps:

[0054] Thermal radiation irradiates the heat-absorbing layer 4, which absorbs the thermal radiation and transfers the heat to the highly conductive micro-region 2, thereby generating a transverse thermoelectric voltage between the first electrode 2a and the second electrode 2b. The heat flux density at the highly conductive micro-region 2 is calculated based on the transverse thermoelectric voltage.

[0055] The temperature at the high conductivity micro-region 2 is calculated based on the resistance between the third electrode 3a and the fourth electrode 3b. The heat flux density at the high conductivity micro-region 2 is calibrated by the temperature at the high conductivity micro-region 2. The spatial distribution characteristics of the heat flux are inferred by combining the heat flux and temperature at multiple high conductivity micro-regions 2.

[0056] Specific workflow:

[0057] Thermal radiation irradiates the heat-absorbing layer 4, which absorbs the radiation and transfers the heat to the highly conductive micro-region 2, generating a transverse thermoelectric voltage between the first electrode 2a and the second electrode 2b. The temperature gradient along the thickness direction of the highly conductive micro-region 2 is calculated based on this transverse thermoelectric voltage, using the following formula:

[0058] U1=l*(S ab -S c )*▽T*sin(2α) / 2=l*(S ab -S c )*sin(2α)*ΔT / 2d;

[0059] Where U1 is the transverse thermoelectric voltage, l is the distance between the first electrode 2a and the second electrode 2b, and S ab S is the Seebeck coefficient in the ab plane of the material within the highly conductive micro-region 2. cdenoted as Seebeck coefficient of the material along the c-axis in the high conductivity micro-region 2, ▽T is the temperature gradient along the thickness direction of the high conductivity micro-region 2, d is the thickness of the single crystal material in the high conductivity micro-region 2, f is the thickness of the substrate 1, α is the angle between the c-axis and the normal of the substrate 1, 0.1°<α<90°, and ΔT is the temperature difference along the thickness direction of the high conductivity micro-region 2.

[0060] The heat flux density is calculated based on the temperature gradient along the thickness direction of the highly conductive micro-region 2, and the calculation formula is as follows:

[0061] q=-k*▽T=-k*2U1 / (l*(S ab -S c )*sin(2α));

[0062] Where q is the heat flux density, k is the thermal conductivity of the material in the highly conductive micro-region 2, and the heat flux density q is directly proportional to U1;

[0063] The temperature T corresponding to the temperature sensor unit 3 can be calculated based on the resistance between the third electrode 3a and the fourth electrode 3b. The spatial distribution characteristics of the temperature can be directly measured based on multiple measured temperatures T. Simultaneously, the sensitivity P (P = U1 / q) of the heat flow sensor in the highly conductive micro-region 2 is closely related to the temperature T, because an increase in temperature leads to an increase in thermal conductivity k and S. ab S c As the temperature changes, there is a corresponding functional relationship between the sensitivity P and the temperature T. The heat flux density of the high conductivity micro-region 2 corresponding to the temperature sensor unit 3 can also be calibrated by the temperature T, so that the heat flux density q at the high conductivity micro-region 2 can be obtained more accurately.

[0064] A high-temperature thermal field direct measurement device includes a high-temperature thermal field direct measurement sensor array, and further includes: a signal conditioning module connected to the high-temperature thermal field direct measurement sensor array; a data acquisition module connected to the signal conditioning module; a data processing and control module connected to the data acquisition module; a display module connected to the data processing and control module; and a storage module connected to the data processing and control module.

[0065] Working principle of high-temperature thermal field direct measurement equipment:

[0066] Thermal field information is acquired through a high-temperature thermal field direct measurement sensor array. The heat-absorbing layer 4 absorbs thermal radiation and transfers heat to the highly conductive micro-region 2, generating a transverse thermoelectric voltage U1 between the first electrode 2a and the second electrode 2b, and a resistance R1 between the third electrode 3a and the fourth electrode 3b. The transverse thermoelectric voltage U1 and resistance R1 are transmitted to a signal conditioning module. This module amplifies, filters, and linearizes the signal output from the high-temperature thermal field direct measurement sensor array to improve signal quality. The signal is then transmitted to a data acquisition module, which converts the conditioned analog signal into a digital signal, acquires it, and temporarily stores it. A data processing and control module receives the digital signal acquired by the data acquisition module, analyzes, calculates, and processes it. Based on a preset algorithm and model, it derives the spatial distribution results of heat flux density and temperature, which are stored in a storage module and displayed in a display module.

[0067] Reference Figures 4 to 5 The spatial distribution results of heat flux density and temperature in two modes were obtained by the high-temperature thermal field direct measurement sensor array of the present invention.

[0068] The high-temperature thermal field direct measurement sensor array of this invention can achieve high-precision spatial distribution measurement of the thermal field, and can simultaneously output the spatial distribution of both heat flux density and temperature. The size of each unit can be as small as hundreds of micrometers, thereby achieving spatial resolution thermal field measurement at the hundreds of micrometer level. It uses highly conductive materials, and the thickness of the highly conductive micro-region 2 and the temperature sensor unit 3 is only hundreds of nanometers, with a small heat capacity, which makes the device respond quickly and is conducive to achieving spatial resolution measurement of transient thermal fields. The size of each unit is relatively small and much smaller than the size of the substrate 1, which makes the heat dissipation effect of the highly conductive micro-region 2 and the temperature sensor unit 3 better, and can achieve spatial resolution measurement of steady-state thermal fields even without water cooling.

[0069] In the description of this invention, it should be understood that the terms "longitudinal", "lateral", "up", "down", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this invention, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention.

[0070] The embodiments described above are merely preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Various modifications and improvements made by those skilled in the art to the technical solutions of the present invention without departing from the spirit of the present invention should fall within the protection scope defined by the claims of the present invention.

Claims

1. A high-temperature thermal field direct measurement sensor array, characterized in that, include: Matrix (1); Multiple highly conductive micro-regions (2) are located within the substrate (1) and close to the top surface of the substrate (1). The multiple highly conductive micro-regions (2) are arranged in an array. A first electrode (2a) and a second electrode (2b) are respectively provided on opposite sides of the highly conductive micro-regions (2). The first electrode (2a) and the second electrode (2b) are both located on the top surface of the substrate (1). A heat-absorbing layer (4) is laid on the top surface of the substrate (1). The heat-absorbing layer (4) is located above the highly conductive micro-region (2) and between the first electrode (2a) and the second electrode (2b). The heat-absorbing layer (4) is used to absorb thermal radiation. The absorption of thermal radiation by the heat-absorbing layer (4) causes the highly conductive micro-region (2), the first electrode (2a) and the second electrode (2b) to generate a thermoelectric effect. Multiple temperature sensor units (3) are arranged on the top surface of the substrate (1) and distributed in an array. The multiple temperature sensor units (3) are arranged one-to-one with the multiple highly conductive micro regions (2). The two ends of the temperature sensor unit (3) are respectively provided with a third electrode (3a) and a fourth electrode (3b). The temperature sensor unit (3) is used to obtain the temperature at the highly conductive micro region (2). The substrate (1) is made of a weakly conductive single crystal material. The substrate (1) is made of 4H-SiC single crystal, 6H-SiC single crystal or GaN single crystal. The room temperature resistivity of the substrate (1) is greater than or equal to 1 ohm-cm. The thickness of the substrate (1) is 0.1mm-10mm; The thickness of the highly conductive micro-region (2) is ≤1000nm; The measurement method of the high-temperature thermal field direct measurement sensor array is as follows: thermal radiation is irradiated onto the heat-absorbing layer (4), the heat-absorbing layer (4) absorbs the thermal radiation and transfers the heat to the highly conductive micro-region (2), so that a transverse thermoelectric voltage is generated between the first electrode (2a) and the second electrode (2b). The temperature gradient along the thickness direction of the highly conductive micro-region (2) is calculated based on the transverse thermoelectric voltage. The calculation formula is as follows: U 1= l ( S ab - S c ) ▽ T sin(2 α ) / 2= l ( S ab - S c ) sin(2 α ) ∆ T / 2 d; in, U 1 represents the transverse thermoelectric voltage. l The distance between the first electrode (2a) and the second electrode (2b) is the distance between them. S ab The Seebeck coefficient in the ab plane of the material within the highly conductive micro-region (2) is given. S c The Seebeck coefficient of the material along the c-axis in the highly conductive micro-region (2), ▽ T For the temperature gradient along the thickness direction of the highly conductive micro-region (2), d Let α be the thickness of the single crystal material of the high conductivity micro-region (2), α be the angle between the c-axis of the substrate (1) and the normal, 0.1° < α < 90°, and ∆T be the temperature difference in the thickness direction of the high conductivity micro-region (2). The heat flux density is calculated based on the temperature gradient along the thickness direction of the highly conductive micro-region (2), and the calculation formula is as follows: q=-k ▽ T=-k 2U 1 / ( l ( S ab - S c ) sin(2 α )); in, q For heat flux density, k The thermal conductivity and heat flux density of the material in the highly conductive micro-region (2) are given. q It is directly proportional to U1; The temperature at the location corresponding to the temperature sensor unit (3) can be calculated based on the resistance between the third electrode (3a) and the fourth electrode (3b). T Based on multiple measured temperatures T The spatial distribution characteristics of temperature can be directly measured. At the same time, because of the high conductivity micro-region (2), the sensitivity P of the heat flow sensor is related to temperature. T Correlation: Increased temperature leads to decreased thermal conductivity k、 Seebeck coefficient in the ab plane of the material within the highly conductive micro-region (2) S ab Seebeck coefficient of the material along the c-axis in the highly conductive micro-region (2) S c Changes occur, sensitivity P changes with temperature T There exists a corresponding functional relationship, through temperature. T The heat flux density of the highly conductive micro-region (2) corresponding to the temperature sensor unit (3) can be calibrated.

2. The high-temperature thermal field direct measurement sensor array according to claim 1, characterized in that: The first electrode (2a) and the second electrode (2b) are made of Ni / Pt / Au thin film.

3. The high-temperature thermal field direct measurement sensor array according to claim 1, characterized in that: The heat-absorbing layer (4) is made of C composite material.

4. The high-temperature thermal field direct measurement sensor array according to claim 1, characterized in that: The temperature sensor unit (3) is made of Pt / Ti double-layer thin film.

5. The high-temperature thermal field direct measurement sensor array according to claim 1, characterized in that: The third electrode (3a) and the fourth electrode (3b) are both made of Au thin film.

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