Detection device and electronic detection method

Abstract

The invention discloses a detection device and an electronic detection method, and relates to the technical field of semiconductor integrated circuits. The detection device comprises an objective lens which is configured to converge a detection electron beam generated by an electron source and enable the convergent detection electron beam to act on a test sample, so that the test sample generates a return signal electron beam under the action of the detection electron beam; a sample stage configured to place a test sample; the detector is arranged on the side, away from the sample table, of the objective lens and arranged on the optical axis of the objective lens, a through hole is formed in the detector, and the detector is configured to receive a signal electron beam returned by the test sample; and the deflector assembly is arranged in the lens barrel of the objective lens and is configured to enable the signal electron beam returned by the test sample to deviate from the through hole of the detector. According to the application, the collection efficiency of the detector on the signal electron beam can be improved.

Description

Technical Field

[0001] This application belongs to the technical field of semiconductor integrated circuits, and particularly relates to a detection device and an electronic detection method. Background Art

[0002] An integrated circuit (IC) is a microelectronic device that interconnects components such as transistors, resistors, capacitors, and inductors required in a circuit and fabricates them on a wafer to form a micro-structure with the required circuit functions. With the development of semiconductor technology, the size of integrated circuits has been continuously reduced, and the yield detection of wafers has become crucial.

[0003] Currently, an electron microscope emits a detection electron beam, and the signal electron beam generated on the wafer surface is collected to form a wafer signal image, so as to analyze the yield of the wafer based on the wafer signal image.

[0004] However, since the electron microscope uses an immersion objective lens, an opening needs to be made in the center of the detector to allow the detection electron beam to pass through. In this way, there will be a certain dead zone in the detector, resulting in a low collection efficiency of the signal electron beam generated by the wafer by the detector. Summary of the Invention

[0005] The embodiments of this application provide a detection device and an electronic detection method, which can improve the collection efficiency of the detector for the signal electron beam.

[0006] In the first aspect of the embodiments of this application, a detection device is provided, including:

[0007] An objective lens configured to converge the detection electron beam generated by an electron source and make the converged detection electron beam act on a test sample, so that the test sample generates a return signal electron beam under the action of the detection electron beam;

[0008] A sample stage configured to place the test sample;

[0009] A detector disposed on the side of the objective lens away from the sample stage and on the optical axis of the objective lens. The detector is provided with a through hole and is configured to receive the signal electron beam returned by the test sample;

[0010] A deflector assembly disposed in the lens barrel of the objective lens and configured to deflect the signal electron beam returned by the test sample away from the through hole of the detector.

[0011] In the second aspect of the embodiments of this application, an electronic detection method is provided, which is applied to the detection device and includes:

[0012] Obtaining the detection mode of the detection device;

[0013] In the case where the detection mode is the continuous scanning mode, set the voltage gain of the second deflector to a target gain value, where the target gain value is the gain value that enables the signal electron beam generated by the test sample to deviate from the dead zone of the detector, and the second deflector is the deflector that controls the offset position of the signal electron beam in the moving direction of the sample stage;

[0014] When the voltage gain of the second deflector is the target gain value, focus the detection electron beam on the test sample so that the test sample generates a signal electron beam under the action of the detection electron beam;

[0015] Receive the signal electron beam generated by the test sample through the detector.

[0016] In a third aspect of the embodiments of the present application, there is provided an electronic device, which includes: a memory and a program or instruction stored on the memory and executable on a processor. When the program or instruction is executed by the processor, it implements the electronic detection method provided in any aspect of the embodiments of the present application as described above.

[0017] In a fourth aspect of the embodiments of the present application, there is provided a readable storage medium, on which a program or instruction is stored. When the program or instruction is executed by a processor, it implements the electronic detection method provided in any aspect of the embodiments of the present application as described above.

[0018] In a fifth aspect of the embodiments of the present application, there is provided a computer program product. When the instructions in the computer program product are executed by the processor of the electronic device, the electronic device is caused to execute the electronic detection method provided in any aspect of the embodiments of the present application as described above.

[0019] In the detection device provided by the embodiments of the present application, the deflector assembly is configured to enable the signal electron beam returned by the test sample to deviate from the through hole of the detector. Then, the objective lens focuses the detection electron beam on the test sample so that the test sample generates a signal electron beam under the action of the detection electron beam. Thus, under the action of the deflector assembly, the detector can completely receive the signal electron beam returned by the test sample. In this way, by configuring the deflector assembly in the present application, the position of the signal electron beam returned by the test sample is changed so that the signal electron beam can deviate from the dead zone of the detector, thereby improving the collection efficiency of the detector for the signal electron beam. Description of the Drawings

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required to be used in the embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0021] Figure 1 It is a schematic structural diagram of an electron microscope provided by an embodiment of the present application;

[0022] Figure 2 It is a schematic diagram of the continuous scanning mode provided by an embodiment of the present application;

[0023] Figure 3 It is a schematic diagram of scanning a test sample in the traditional continuous scanning mode provided by an embodiment of the present application;

[0024] Figure 4 Shown is a schematic diagram of the dead zone in the traditional continuous scanning mode provided by an embodiment of the present application;

[0025] Figure 5 It is a schematic diagram of the detector collecting the signal electron beam in the traditional continuous scanning mode provided by an embodiment of the present application;

[0026] Figure 6 It is a schematic diagram of scanning a test sample in the continuous scanning mode after increasing the voltage gain provided by an embodiment of the present application;

[0027] Figure 7 It is a schematic diagram of the dead zone in the continuous scanning mode after increasing the voltage gain provided by an embodiment of the present application;

[0028] Figure 8 It is a schematic diagram of the collection efficiency of the second deflector at different voltage gains provided by an embodiment of the present application;

[0029] Figure 9 It is a schematic diagram of the change in the focusing state caused by the change in voltage gain provided by an embodiment of the present application;

[0030] Figure 10 It is a schematic diagram of the flow of the electron detection method provided by an embodiment of the present application;

[0031] Figure 11 It is a schematic diagram of the structure of the electron detection device provided by an embodiment of the present application. Detailed implementation manners

[0032] The features and exemplary embodiments of various aspects of the present application will be described in detail below. To make the objectives, technical solutions, and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than limiting the present application. For those skilled in the art, the present application can be implemented without some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by showing examples of the present application.

[0033] It should be noted that in this article, relative terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.

[0034] It should be noted that in the technical solution of this application, the acquisition, storage, use, processing, etc. of data all comply with the relevant provisions of national laws and regulations.

[0035] It should be noted that in the embodiments of this application, some existing industry solutions such as certain software, components, models, etc. may be mentioned. They should be regarded as exemplary, and their purpose is only to illustrate the feasibility in the implementation of the technical solution of this application, but it does not mean that the applicant has already or necessarily used this solution.

[0036] In the process of integrated circuit manufacturing, wafer yield detection is a key link. Currently, electron microscopes are widely used in this detection process. By emitting a detection electron beam and collecting the signal electron beam generated on the wafer surface to form a wafer signal image, and then analyzing the wafer yield. However, this method has a significant technical problem: since the electron microscope uses an immersion objective lens, a through hole must be opened in the center of the detector to allow the detection electron beam to pass through, which results in a certain dead zone in the detector, thus causing a low collection efficiency of the signal electron beam generated by the wafer.

[0037] Specifically, in a typical wafer detection scenario, assume that a high-resolution electron microscope equipped with an immersion objective lens is used to detect the wafer. The detection electron beam generated by the electron source is converged by the objective lens and then irradiates the wafer surface through the through hole in the center of the detector. The signal electron beam generated on the wafer surface then needs to be received by the detector. However, due to the through hole in the center of the detector forming a circular dead zone, this area cannot effectively collect the signal electron beam. During the detection process, especially when observing the microstructures on the wafer, a considerable part of the important signal electron beams will fall into this dead zone, which directly affects the image quality and the detection accuracy.

[0038] The purpose of the present application is to provide a detection device and an electronic detection method. In the detection device provided by the embodiments of the present application, a deflector assembly is configured to enable the signal electron beam returned by the test sample to deviate from the through hole of the detector. Then, the objective lens converges the detection electron beam onto the test sample, so that the test sample generates a signal electron beam under the action of the detection electron beam. Thus, under the action of the deflector assembly, the detector can completely receive the signal electron beam returned by the test sample. In this way, by configuring the deflector assembly, the position of the signal electron beam returned by the test sample changes, so that the signal electron beam can deviate from the dead zone of the detector, thereby improving the collection efficiency of the detector for the signal electron beam.

[0039] The following introduces specific embodiments of the detection device and the electronic detection method provided by the embodiments of the present application. First, the detection device will be introduced below.

[0040] Figure 1 A schematic structural diagram of a detection device is provided. The detection device includes an objective lens 130, a sample stage 150, a detector 120, and a deflector assembly 140.

[0041] The objective lens 130 is configured to converge the detection electron beam 180 generated by the electron source 110 and make the converged detection electron beam 180 act on the test sample 170, so that the test sample 170 generates a returned signal electron beam 190 under the action of the detection electron beam 180;

[0042] The sample stage 150 is configured to place the test sample 170;

[0043] The detector 120 is arranged on the side of the objective lens 130 away from the sample stage 150 and on the optical axis of the objective lens 130. The detector 120 is provided with a through hole and is configured to receive the signal electron beam 190 returned by the test sample 170;

[0044] The deflector assembly 140 is arranged in the barrel of the objective lens 130 and is configured to make the signal electron beam 190 returned by the test sample 170 deviate from the through hole of the detector 120.

[0045] In this embodiment, the objective lens 130 refers to the key optical element in the detection device for converging the detection electron beam 180. Exemplarily, an electromagnetic lens can be used to achieve this.

[0046] The sample stage 150 refers to the platform for placing and fixing the test sample 170. Exemplarily, a movable precision mechanical structure can be used to achieve this. Among them, the sample stage 150 is arranged at a preset position on the light-emitting side of the objective lens 130.

[0047] The detector 120 refers to a structure for receiving and detecting the signal electron beam 190. Exemplarily, a semiconductor detector or a scintillator-photomultiplier tube combination can be used to implement it. Among them, the detector 120 is arranged at a preset position on the light incident side of the objective lens 130.

[0048] The deflector assembly 140 refers to a structure for controlling the electron beam trajectory, which is arranged inside the barrel of the objective lens 130. Exemplarily, an electromagnetic deflector or an electrostatic deflector can be used to implement it. Among them, the electromagnetic deflector generates a magnetic field by changing the current in the coil, thereby controlling the deflection of the detection electron beam 180 generated by the electron source 110, and further causing the signal electron beam 190 to deflect accordingly. The electrostatic deflector generates an electric field by changing the voltage on the deflector plate, controls the deflection of the detection electron beam 180 generated by the electron source 110, and further causes the signal electron beam 190 to deflect accordingly. Both of these deflectors can precisely control the offset position of the signal electron beam 190 by adjusting the voltage gain.

[0049] The core innovation of this application lies in the deflector assembly 140 arranged inside the barrel of the objective lens 130. By adjusting the voltage gain of the deflector assembly 140, the signal electron beam 190 returned by the test sample 170 can be made to deviate from the dead zone formed by the through hole opened in the detector 120. This design ingeniously solves the problem of low collection efficiency of the signal electron beam 190 caused by the dead zone of the detector 120 in traditional electron microscopes, and improves the signal collection efficiency and image quality.

[0050] Specifically, the working principle of the detection device is as follows: First, the electron source 110 generates a detection electron beam 180. The detection electron beam 180 passes through the through hole in the center of the detector 120 and is converged by the objective lens 130. The objective lens 130 usually adopts an electromagnetic lens structure, and controls the magnetic field intensity by adjusting the current, thereby realizing the focusing of the electron beam. The converged detection electron beam 180 acts on the test sample 170 placed on the sample stage 150. Among them, the sample stage 150 can be precisely moved to observe different regions of the test sample 170.

[0051] When the detection electron beam 180 interacts with the test sample 170, the test sample 170 will generate a signal electron beam 190. These signal electron beams 190 carry information about the surface and internal structure of the test sample 170. In the traditional design, these signal electron beams 190 will directly return to the detector 120. However, due to the existence of a through hole in the center of the detector 120, some of the signal electron beams 190 will fall into this dead zone and cannot be detected by the detector 120.

[0052] This application adopts a deflector assembly 140 disposed within the barrel of the objective lens 130. This deflector assembly 140 can be an electromagnetic deflector or an electrostatic deflector. By adjusting its corresponding voltage gain, the deflection of the detection electron beam 180 generated by the electron source 110 can be controlled, thereby precisely controlling the trajectory of the returned signal electron beam 190. When the voltage gain meets the preset deviation condition, the returned signal electron beam 190 will be deflected, so as to avoid the through-hole dead zone in the center of the detector 120 and fall within the effective reception area of the detector 120.

[0053] As a preferred implementation, the detection device uses a field emission electron source 110; the objective lens 130 adopts a superconducting electromagnetic lens design; the sample stage 150 adopts a five-axis precision control system; the deflector assembly 140 adopts a biaxial electromagnetic deflector design; the detector 120 selects a high-sensitivity backscattered electron detector with a through-hole of a preset size opened in its center.

[0054] In actual operation, first, according to the characteristics of the test sample 170 and the observation requirements, the initial voltage gain of the deflector assembly 140 is set. Then, during the scanning process, according to the real-time image quality feedback, the voltage gain of the deflector 140 is dynamically adjusted.

[0055] For example, if it is found that the image contrast of some sample areas of the test sample 170 is low, the deflection voltage can be finely adjusted to make more signal electron beams 190 fall within the optimal reception area of the detector 120. In this way, efficient signal collection can be maintained throughout the scanning process, thereby obtaining a high-quality image of the test sample.

[0056] In the detection device provided in this embodiment, the deflector assembly is configured to enable the signal electron beam returned by the test sample to deviate from the through-hole of the detector. Then, the objective lens 130 focuses the detection electron beam 180 on the test sample 170, so that the test sample 170 generates a signal electron beam 190 under the action of the detection electron beam 180. Thus, under the action of the deflector assembly, the detector 120 can completely receive the signal electron beam 190 returned by the test sample 170. In this way, this application configures the deflector assembly 140 to change the position of the signal electron beam 190 returned by the test sample 170, so that the signal electron beam 190 can deviate from the dead zone of the detector 120, thereby improving the collection efficiency of the detector 120 for the signal electron beam 190.

[0057] As an alternative embodiment, the deflector assembly 140 includes a first deflector 141 and a second deflector 142;

[0058] The first deflector 141 is configured to control the offset position of the signal electron beam 190 in the first direction by adjusting its corresponding voltage gain;

[0059] The second deflector 142 is configured to control the offset position of the signal electron beam 190 in a second direction perpendicular to the first direction by adjusting its corresponding voltage gain.

[0060] In this embodiment, two independent deflectors are provided to separately control the offsets of the signal electron beam 190 in two perpendicular directions, achieving precise control of the position of the signal electron beam 190. For example, the first deflector 141 can be used to control the offset position of the signal electron beam 190 in the lateral direction, and the second deflector 142 is used to control the offset position of the signal electron beam 190 in the longitudinal direction; or the first deflector 141 can be used to control the offset position of the signal electron beam 190 in the longitudinal direction, and the second deflector 142 is used to control the offset position of the signal electron beam 190 in the lateral direction.

[0061] Specifically, there are various ways to arrange the first deflector 141 and the second deflector 142. For example, the two deflectors can be arranged in series within the barrel of the objective lens 130, or they can be arranged in parallel. The series arrangement allows the electron beam to pass through the two deflectors successively, achieving more precise control; while the parallel arrangement allows the two deflectors to act on the electron beam simultaneously, improving the response speed.

[0062] The operating principles of the two deflectors are independent of each other. The first deflector 141 can control the offset of the signal electron beam 190 in the first direction (lateral or longitudinal) by adjusting its voltage gain. When the voltage gain is increased, the offset amount of the signal electron beam 190 in this direction increases; conversely, the offset amount decreases. Similarly, the second deflector 142 can control the offset of the signal electron beam 190 in the second direction (perpendicular to the first direction) by adjusting its voltage gain.

[0063] As a preferred embodiment, the first deflector 141 is set to control the offset of the signal electron beam 190 in the lateral direction, and the second deflector 142 is set to control the offset of the signal electron beam 190 in the longitudinal direction. In this configuration, by adjusting the voltage gain of the first deflector 141 to control the offset of the signal electron beam 190 in the lateral direction, the range can be from -5μm to +5μm. At the same time, by adjusting the voltage gain of the second deflector 142 to control the offset of the signal electron beam 190 in the longitudinal direction, the range can also be from -5μm to +5μm. In this way, such a setting enables the operator to precisely control the position of the signal electron beam 190 within a range of 10μm × 10μm, thereby avoiding the dead zone formed by the through holes of the detector 120.

[0064] In this embodiment, by providing two independent deflectors to respectively control the deflection of the signal electron beam 190 in two perpendicular directions, precise control of the position of the signal electron beam 190 can be achieved. By flexibly adjusting the voltage gains of the two deflectors, the signal electron beam 190 can be precisely controlled to deviate from the dead zone formed by the through holes of the detector. In this way, not only the collection efficiency of the signal electron beam 190 is improved, but also the deflection control requirements under different observation needs can be met.

[0065] As an alternative embodiment, the sample stage 150 is configured to drive the test sample 170 to move along a second direction when the detection mode of the detection device is the continuous scanning mode;

[0066] The second deflector 142 is configured to cause the signal electron beam 190 returned by the test sample 170 to deviate from the through hole of the detector 120 when the voltage gain corresponding thereto is the target gain value.

[0067] In this embodiment, the continuous scanning mode is a detection mode of the detection device. In this detection mode, the detection electron beam 180 continuously scans the surface of the sample, enabling rapid and efficient sample detection.

[0068] As Figure 2 shown, a schematic diagram of the continuous scanning mode is provided. Among them, in the continuous scanning mode, the first deflector 141 controls the scanning of the test sample 170 in the first direction by adjusting the voltage gain. Among them, the adjustment of the voltage gain can be linear or non-linear. For example, stepped gain adjustment can be adopted to meet the scanning requirements of different sample regions of the test sample 170.

[0069] The sample stage 150 is configured to drive the test sample 170 to move along a second direction when the detection mode of the detection device is the continuous scanning mode, and cooperate with the first deflector 141 to achieve two-dimensional scanning. Among them, the movement of the sample stage 150 can be continuous or stepwise. Continuous movement can achieve smoother scanning, while stepwise movement can perform finer scanning in certain specific sample regions.

[0070] The second deflector 142 causes the signal electron beam 190 returned by the test sample 170 to deviate from the dead zone formed by the through holes of the detector 120 by setting the target gain value, thereby improving the signal collection efficiency. Among them, the setting of the target gain value can be optimized according to the specific structure of the detector 120 and the size of the dead zone. For example, an optimal gain value range can be determined through experiments, within which the signal electron beam 190 can avoid the dead zone to the greatest extent. As Figure 3As shown in the figure, a schematic diagram of scanning a test sample in a traditional continuous scanning mode is provided. At this time, the scanning of the test sample 170 in the transverse direction (i.e., the X-axis direction) is controlled by adjusting the voltage gain of the first deflector 141, and the test sample 170 is driven by the sample stage 150 to scan in the longitudinal direction (i.e., the Y-axis direction). If the voltage gain of the second deflector 142 is set to zero, it will cause the scanning of each area of the test sample 170 in the longitudinal direction to pass through the dead zone of the detector 120, that is, each scanning line 310 of each scan will pass through the dead zone of the detector 120, resulting in a low collection efficiency of the signal electron beam 190.

[0071] As Figure 4 shown in the figure, a schematic diagram of the dead zone in a traditional continuous scanning mode is provided. It can be seen that when the detector 120 collects the signal electron beam 190 in the traditional continuous scanning mode, there will be a circular dead zone 401 composed of through holes. The signal electron beam 190 falling in the circular dead zone 401 is the signal electron beam 190 that cannot be collected in the continuous scanning mode. Therefore, in the traditional continuous scanning mode, the collection efficiency of the signal electron beam 190 is low.

[0072] As Figure 5 shown in the figure, a schematic diagram of the detector collecting the signal electron beam 190 in a traditional continuous scanning mode is provided. Among them, Figure 3 the darker shaded areas are the areas where the collection efficiency of the signal electron beam 190 corresponding to the test sample 170 is lower.

[0073] It can be clearly seen that when the scanning of the test sample 170 in the transverse direction is controlled by adjusting the voltage gain of the first deflector 141, only a small part of the area has a problem of low collection efficiency of the signal electron beam 190 when the voltage gain of the first deflector 141 in the transverse direction is small; and since the test sample 170 is driven by the sample stage 150 to scan in the second direction in the continuous scanning mode, if the voltage gain of the second deflector 142 is fixed to zero at this time, it will cause the problem of low collection efficiency of the signal electron beam 190 in each area in the longitudinal direction, resulting in a low overall collection efficiency of the signal electron beam 190 of the final test sample 170.

[0074] As a preferred implementation manner, first, set the detection mode of the detection device to the continuous scanning mode. Specifically, this can be set through the control system of the detection device to ensure that the electron beam scans the surface of the test sample 170 in a continuous manner.

[0075] Next, adjust the voltage gain of the first deflector 141 to control the scanning of the test sample 170 in the first direction (i.e., the lateral direction). Specifically, the gain adjustment can be implemented using a digital-to-analog converter, and the scanning range can be set as needed. At the same time, control the sample stage 150 to move in the second direction (i.e., the longitudinal direction). Specifically, the sample stage 150 can be driven by a precision stepper motor, and the moving speed can be adjusted according to the scanning requirements.

[0076] Then, set the voltage gain of the second deflector 142 to a predetermined target gain value. For example, the target gain value can be set to 1, and this target gain value can be determined through experiments or simulations. At this target gain value, the returned signal electron beam 190 can effectively avoid the dead zone of the through hole of the detector 120. As Figure 6 shown, a schematic diagram of the scanning of the test sample in the continuous scanning mode after increasing the voltage gain is provided. Among them, the scanning line 210 is translated upward compared to Figure 3 so as to avoid the dead zone of the detector 120.

[0077] Finally, start performing scanning and signal collection. The first deflector 141 and the sample stage 150 work together to achieve a comprehensive scan of the surface of the test sample 170, while the second deflector 142 is fixed at the target gain value to ensure that the signal electron beam 190 is captured by the effective area of the detector 120.

[0078] As Figure 7 shown, a schematic diagram of the dead zone in the continuous scanning mode after increasing the voltage gain is provided. It can be seen that most of the signal electron beam 190 is far away from the circular dead zone 401 at this time, so the collection efficiency of the signal electron beam 190 is improved.

[0079] As Figure 8 shown, a schematic diagram of the collection efficiency of the second deflector at different voltage gains is provided. It can be seen that as the voltage gain of the second deflector 142 increases, the collection efficiency of the signal electron beam 190 also increases. And finally, the collection efficiency of the signal electron beam 190 can reach 1, that is, the signal electron beam 190 has completely deviated from the dead zone formed by the through holes. Through this embodiment, the cooperative work of the deflector assembly 140 and the sample stage 150 is ingeniously designed to effectively solve the problem of low signal collection efficiency caused by the dead zone of the detector 120 while ensuring continuous scanning. Through the precise control of the second deflector 142, the signal electron beam 190 can be captured by the effective area of the detector, thereby improving the overall signal collection efficiency.

[0080] As an alternative embodiment, the detection device further includes a deflection controller configured to:

[0081] When the detection mode is the continuous scanning mode, obtain the target field of view size of the detection device's observation field of view;

[0082] According to the preset matching relationship between the field of view size of the observation field of view and the voltage gain of the second deflector 142, determine the target gain value that matches the target field of view size;

[0083] Set the voltage gain of the second deflector 142 to the target gain value.

[0084] In this embodiment, when the detection mode is the continuous scanning mode, the deflection controller obtains the target field of view size of the detection device's observation field of view. Among them, the target field of view size can be obtained by user input or system preset. For example, the user can set the required observation field of view size through the operation interface, or the system can automatically select the appropriate field of view size according to the current observation task.

[0085] Secondly, the deflection controller determines the target gain value that matches the target field of view size according to the preset matching relationship between the field of view size of the observation field of view and the voltage gain of the second deflector 142. This preset matching relationship can be obtained through experimental data or theoretical calculation, and it reflects the voltage gain values required under different field of view sizes. Specifically, for a larger field of view size, a higher voltage gain is required to ensure that the signal electron beam 190 can effectively deviate from the dead zone of the detector 120.

[0086] Finally, the deflection controller sets the voltage gain of the second deflector 142 to the target gain value. Specifically, this step can be achieved by sending a control signal to the second deflector 142 to adjust it to the calculated target gain value.

[0087] Through this embodiment, the problem of how to avoid the dead zone of the detector 120 in the continuous scanning mode can be effectively solved. When the detection device works in the continuous scanning mode, the deflection controller will automatically adjust the voltage gain of the second deflector 142 according to the current observation field of view size. This adjustment ensures that the returned signal electron beam 190 can effectively deviate from the through-hole dead zone at the center of the detector 120, so as to be accurately captured by the detector 120.

[0088] As an alternative embodiment, the deflection controller is configured to:

[0089] According to the preset matching relationship between the field of view size of the observation field of view and the voltage gain of the second deflector 142, determine the target gain range that matches the target field of view size;

[0090] Obtain the current scanning area of the test sample 170;

[0091] According to the sample geometric features of the current scanning area, determine a target gain value within a target gain range, where the sample geometric features include at least one of the height of the test sample 170 and the tilt angle of the test sample 170.

[0092] In this embodiment, the sample geometric features are used to characterize the geometric features corresponding to the current scanning area of the test sample 170. Exemplarily, the sample geometric features include at least one of the height of the test sample 170 and the tilt angle of the test sample 170.

[0093] As a preferred implementation manner, the deflection controller first determines a target gain range that matches the target field of view size according to a preset matching relationship between the field of view size of the observation field of view and the voltage gain of the second-axis deflector 142. Exemplarily, the field of view size can be the side length of the observation field of view. When the field of view size is in the range of 0 - 20um, the voltage gain range is 0.3 - 0.5; when the field of view size is in the range of 20 - 40um, the voltage gain range is 0.5 - 0.7; when the field of view size is greater than 40um, the voltage gain range is 0.7 - 1.

[0094] Specifically, it can be achieved in various ways. For example: First, use a look-up table: Pre-establish a correspondence table between the field of view size and the voltage gain range, and directly look up the corresponding target gain range according to the target field of view size; Second, use a mathematical model: Establish a functional relationship between the field of view size and the voltage gain, and calculate the target gain range through calculation; Third, use interpolation method: For the field of view size not directly listed in the preset matching relationship, linear interpolation or other interpolation methods can be used to calculate the target gain range.

[0095] Next, the deflection controller obtains the current scanning area of the test sample 170. Specifically, this can be achieved in the following ways: First, use a position sensor: Install a position sensor on the sample stage 150 to obtain the position information of the sample stage 150 in real time; Second, through the feedback of the control system: Directly obtain the coordinate information of the current scanning area of the test sample 170 from the control system of the detection device; Third, image analysis: Determine the position of the current scanning area of the test sample 170 by analyzing the real-time acquired image.

[0096] Finally, the deflection controller determines the target gain value within the target gain range according to the sample geometric features of the current scanning area of the test sample 170. The sample geometric features include at least one of the height of the test sample 170 and the tilt angle of the test sample 170.

[0097] Specifically, this step can be achieved in the following ways: First, establish a relationship model between geometric features and gain adjustment: Based on the influence of height and tilt angle on gain, establish a mathematical model for calculating the final target gain value; Second, use machine learning algorithms: Train a machine learning model with a large amount of experimental data, which can predict the optimal target gain value according to the input sample geometric features; Third, piecewise function method: According to different ranges of sample geometric features, use different adjustment functions to determine the target gain value.

[0098] Through this embodiment, the matching relationship between the observed field of view size and the voltage gain is introduced, and the influence of the geometric features of the test sample 170 is considered, realizing the precise control of the deflector voltage gain. In this way, the gain value can be automatically adjusted according to the actual observation requirements and the characteristics of the test sample 170, improving the electron detection effect of the detection device in the continuous scanning mode. At the same time, due to considering geometric features such as the height and tilt angle of the test sample 170, this method can also adapt to the electron detection requirements of test samples 170 with different shapes and positions, enhancing adaptability and versatility.

[0099] As an alternative embodiment, the deflection controller is configured to:

[0100] Input the sample geometric features of the current scanning area into the gain adjustment model to obtain a gain adjustment value. The gain adjustment model is a neural network model trained according to historical sample geometric features and historical gain adjustment values;

[0101] Adjust the gain midpoint value of the target gain range according to the gain adjustment value to obtain the target gain value.

[0102] In this embodiment, the gain adjustment model is a neural network model trained based on historical data. Among them, the input of the gain adjustment model is the sample geometric features, and the output is the gain adjustment value. The training data of the model includes historical sample geometric features and corresponding historical gain adjustment values.

[0103] As a preferred implementation manner, first, establish and train a gain adjustment model. Specifically, this can be accomplished by collecting the geometric features and corresponding optimal gain adjustment values of a large number of different test samples 170 under different scanning conditions. For example, machine learning algorithms such as deep neural networks or support vector machines can be used to train the model.

[0104] Secondly, during the scanning process of the detection device, obtain the sample geometric features of the current scanning area of the test sample 170 in real time. Specifically, this can be achieved through the height sensor or tilt angle sensor of the detection device.

[0105] Then, input the obtained sample geometric features into the trained gain adjustment model. The model will output a gain adjustment value.

[0106] Finally, apply this gain adjustment value to the gain midpoint value of the target gain range to obtain the final target gain value.

[0107] Through this embodiment, by introducing a neural network model, the intelligent adjustment of the deflector voltage gain is realized. In this way, the voltage gain can be adaptively adjusted according to the specific situation of the test sample 170, improving the imaging quality and accuracy of the detection device under different test samples 170 and different scanning regions. Compared with the fixed voltage gain or manual adjustment of the voltage gain, it has higher flexibility and accuracy.

[0108] As an alternative embodiment, the detection device further includes:

[0109] A deceleration component 160, disposed between the objective lens 130 and the sample stage 150, configured to control the resolution of the detection device by adjusting the corresponding field voltage.

[0110] In this embodiment, the deceleration component 160 is disposed between the objective lens 130 and the sample stage 150. This position arrangement enables the deceleration component 160 to directly act on the detection electron beam 180 emitted from the objective lens 130, thereby effectively adjusting the energy of the detection electron beam 180. By adjusting the field voltage of the deceleration component 160, the speed of the detection electron beam 180 can be changed, thereby affecting the resolution of the detection device.

[0111] Specifically, the deceleration component 160 can use an electrostatic field or a magnetic field to decelerate the detection electron beam 180. For example, a set of parallel plate electrodes or toroidal electrodes can be used to generate a uniform electrostatic field. When the detection electron beam 180 passes through this electrostatic field, its speed will be affected, thereby changing its focusing characteristics. By precisely controlling the magnitude of the field voltage of the deceleration component 160, fine adjustment of the resolution can be achieved.

[0112] Among them, the working principle of the deceleration component 160 is based on electron optics theory. When the detection electron beam 180 passes through the deceleration field formed by the deceleration component 160, its kinetic energy will change, which will affect the wavelength and focusing characteristics of the detection electron beam 180. According to the de Broglie wavelength formula, the wavelength of the detection electron beam 180 is inversely proportional to its kinetic energy. By reducing the energy of the detection electron beam 180, its wavelength can be increased, thereby improving the resolution. At the same time, the deceleration field can also change the convergence angle of the detection electron beam 180, further affecting the imaging quality.

[0113] Such as Figure 9As shown in the figure, a schematic diagram of the change in the focusing state caused by the change in voltage gain is provided. Among them, the first image point 910 is the image point of the detection device when the voltage gain of the second deflector 142 is 0 in the continuous scanning mode, the second image point 920 is the image point of the detection device when the voltage gain of the second deflector 142 is 0.5 in the continuous scanning mode, and the third image point 930 is the image point of the detection device when the voltage gain of the second deflector 142 is 1 in the continuous scanning mode. The first curve 940 is the curve corresponding to the initial field voltage of the deceleration field in the continuous scanning mode, and the second curve 950 is the curve corresponding to the field voltage of the deceleration field adjusted to a specific value in the continuous scanning mode.

[0114] Among them, when the voltage gain of the second deflector 142 is 0 in the continuous scanning mode, the first image point 910 is exactly on the first curve 940, that is, it is in the in-focus state at this time; while when the voltage gain of the second deflector 142 is 0.5 in the continuous scanning mode, the second image point 920 exceeds the first curve 940, resulting in the detection device being in an over-focus state, resulting in too low resolution of the detection device. Therefore, at this time, it is necessary to adjust the field voltage of the deceleration field formed by the deceleration component 160 to a specific value to modify the first curve 940 to the second curve 950, so that the second image point 920 when the voltage gain of the second deflector 142 is 0.5 in the continuous scanning mode is in the in-focus state, so that the detection device returns to the in-focus state.

[0115] In practical applications, the field voltage of the deceleration field formed by the deceleration component 160 can be dynamically adjusted according to specific observation requirements. For example, when observing the fine structure of the test sample 170, the field voltage can be increased and the energy of the detection electron beam 180 can be reduced to obtain higher resolution. On the contrary, when observing the overall morphology of the test sample 170, the field voltage can be reduced and the energy of the detection electron beam 180 can be kept high to obtain a larger field of view.

[0116] Through this embodiment, by introducing the deceleration component 160, the present application realizes flexible control of the resolution of the detection device. In this way, while improving the collection efficiency of the signal electron beam 190 of the detector 120, the present application can ensure the high resolution of the detection device.

[0117] As an alternative embodiment, the detection device further includes a deceleration component controller, which is configured to:

[0118] Determine the voltage adjustment range of the deceleration component 160 according to the target gain value;

[0119] Obtain the current scanning area of the test sample 170;

[0120] Determine the target voltage value within the voltage adjustment range according to the focusing parameters of the current scanning area;

[0121] Set the corresponding field voltage to the target voltage value.

[0122] In this embodiment, the focusing parameter is used to characterize the parameter related to the focusing situation of the test sample 170. Exemplarily, the focusing parameter may include the height information, tilt angle, etc. of the surface of the test sample 170.

[0123] When the deceleration component controller realizes the automatic adjustment of the field voltage, various methods can be adopted. For example, when determining the voltage adjustment range, a fixed percentage range, such as ±10%, can be set based on the target gain value. Or the corresponding relationship between the target gain value and the voltage adjustment range can be established according to historical data.

[0124] When obtaining the current scanning area of the test sample 170, it can be determined by real-time monitoring of the position of the sample stage 150. For the acquisition of the focusing parameter, it can be calculated in real time by using an autofocus algorithm or extracted from the focusing parameter database of each sample scanning area stored in advance.

[0125] In the process of determining the target voltage value, the characteristics of the current scanning area are considered, which forms a good cooperation with the field voltage adjustment of the deceleration component. According to the focusing parameter, a suitable target voltage value is selected within the preset voltage adjustment range, which not only ensures the flexibility of the voltage adjustment but also avoids the negative impact that may be brought by excessive adjustment. This dynamic adjustment mechanism can adapt to the changes of different scanning areas of the test sample 170 and maintain the best imaging effect.

[0126] Through this embodiment, the deceleration component controller is introduced to realize the automatic adjustment of the field voltage of the deceleration component 160 in the continuous scanning mode of the detection device. It can dynamically adjust the field voltage of the deceleration component 160 according to the specific sample scanning area and sample characteristics, so as to optimize the focusing effect of the detection electron beam 180 and improve the imaging quality. At the same time, the automated adjustment process also improves the operation efficiency of the detection device.

[0127] As an alternative embodiment, as Figure 10 shown, a flowchart of an electron detection method is provided. The electron detection method can be applied to a detection device, and the electron detection method may include the following S1001 to S1004.

[0128] S1001, obtain the detection mode of the detection device;

[0129] S1002, in the case where the detection mode is the continuous scanning mode, set the voltage gain of the second deflector to the target gain value, where the target gain value is the gain value that enables the signal electron beam generated by the test sample to deviate from the detector dead zone, and the second deflector is the deflector that controls the offset position of the signal electron beam in the moving direction of the sample stage;

[0130] S1003, when the voltage gain of the second deflector is the target gain value, focus the detection electron beam on the test sample so that the test sample generates a signal electron beam under the action of the detection electron beam;

[0131] S1004, receive the signal electron beam generated by the test sample through a detector.

[0132] In this embodiment, the detection device includes two detection modes, namely, the continuous scanning mode and the step scanning mode.

[0133] In the continuous scanning mode, the scanning device moves at a constant speed or continuously, and at the same time the detector records the response signal of the test sample in real time. In this mode, the scanning process is carried out without interruption until the entire predetermined scanning range is covered.

[0134] In the step scanning mode, the scanning device moves to a predetermined position (i.e., the step point) before each detection, then stops and stabilizes, and at this time the detector records the response signal of the test sample. After one detection is completed, the scanning device moves to the next step point and repeats the above process until the entire scanning range is completed.

[0135] As an example, first, obtain the detection mode of the detection device. Specifically, this step can be implemented in various ways, such as manually selecting through the user interface or determining the current detection mode through a preset automatic detection program. After determining that the detection mode is the continuous scanning mode, continue to perform subsequent operations.

[0136] Then, set the voltage gain of the second deflector to the target gain value. Specifically, the target gain value can be determined in advance through experimental data or theoretical calculations. For example, a series of gain values can be set, the offset of the signal electron beam can be observed, and the gain value that can just avoid the dead zone of the detector is selected as the target gain value. In addition, the target gain value may need to be fine-tuned according to different test sample characteristics and observation requirements.

[0137] Then, after setting the voltage gain of the second deflector, focus the detection electron beam on the test sample. Specifically, this step requires precise control of the focusing and positioning of the detection electron beam, which can be achieved by adjusting the electromagnetic field of the objective lens.

[0138] Finally, receive the signal electron beam generated by the test sample through the detector. The sensitivity and response time of the detector are crucial for the signal acquisition quality. Specifically, a high-sensitivity detector can be considered, or signal accumulation technology can be used to improve the signal-to-noise ratio of the signal.

[0139] In this embodiment, in the continuous scanning mode, the voltage gain of the second deflector is set to the target gain value to ensure that the signal electron beam can avoid the dead zone of the detector. Then, with this setting, the detection electron beam is converged onto the test sample, and the generated signal electron beam can be effectively received by the detector. This method cleverly utilizes the function of the deflector to change the path of the signal electron beam through voltage adjustment, thus solving the problem of low signal collection efficiency caused by the dead zone of the detector in traditional electron microscopes.

[0140] As an alternative embodiment, after S1002, the electron detection method may further include:

[0141] According to the target gain value, the field voltage corresponding to the deceleration component of the detection device is set to the target voltage value;

[0142] S1003 may specifically include:

[0143] When the voltage gain of the second deflector is the target gain value and the field voltage corresponding to the deceleration component is the target voltage value, the detection electron beam is converged onto the test sample.

[0144] In this embodiment, first, the voltage adjustment range of the deceleration component is determined according to the target gain value. Specifically, it can be achieved through a pre-established correspondence between the gain value and the voltage adjustment range. For example, a look-up table can be set or a functional relationship can be used. Input the target gain value and output the corresponding voltage adjustment range.

[0145] Secondly, the current scanning area of the test sample is obtained. Specifically, it can be achieved through the control system of the detection device, and the control system can track the scanning position of the detection electron beam in real time.

[0146] Thirdly, according to the focusing parameters of the current scanning area of the test sample, the target voltage value is determined within the voltage adjustment range. The focusing parameters may include height information, tilt angle, etc. on the surface of the sample. Specifically, it can be achieved through an optimization algorithm that considers the influence of the focusing parameters on the resolution and searches for the optimal target voltage value within the voltage adjustment range.

[0147] Finally, the field voltage corresponding to the deceleration component is set to the target voltage value. Specifically, it is directly executed through the control system of the detection device, and the calculated target voltage value is applied to the deceleration component.

[0148] In this embodiment, in the continuous scanning mode, by simultaneously adjusting the voltage gain of the second deflector and the field voltage of the deceleration component, precise control of the signal electron beam is achieved. Thus, this coordinated adjustment method can not only avoid the dead zone of the detector and improve the signal collection efficiency, but also optimize the resolution by adjusting the field voltage of the deceleration component, thereby ensuring both the detection efficiency and the resolution of the detection device. Based on the electron detection method provided in this application. Accordingly, this application also provides a specific embodiment of an electron detection device.

[0149] Figure 11 FIG. shows a schematic diagram of the hardware structure of the electron detection device provided in the embodiment of this application.

[0150] The electron detection device may include a processor 1101 and a memory 1102 storing computer program instructions.

[0151] Specifically, the above-mentioned processor 1101 may include a central processing unit (CPU), or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of this application.

[0152] The memory 1102 may include a mass storage for data or instructions. By way of example and not limitation, the memory 1102 may include a hard disk drive (HDD), a floppy disk drive, a flash memory, an optical disc, a magneto-optical disc, a magnetic tape, or a universal serial bus (USB) drive, or a combination of two or more of these. In a suitable case, the memory 1102 may include removable or non-removable (or fixed) media. In a suitable case, the memory 1102 may be internal or external to the integrated gateway disaster recovery device. In a specific embodiment, the memory 1102 is a non-volatile solid state memory.

[0153] The processor 1101 reads and executes the computer program instructions stored in the memory 1102 to implement any one of the electron detection methods in the above embodiments.

[0154] In one example, the electron detection device may further include a communication interface 1103 and a bus 1110. Among them, as Figure 11 shown, the processor 1101, the memory 1102, and the communication interface 1103 are connected through the bus 1110 and complete communication with each other.

[0155] The communication interface 1103 is mainly used to implement communication between various modules, devices, units, and / or devices in the embodiments of this application.

[0156] The bus 1110 includes hardware, software, or both, and couples components of the electronic detection device to each other. By way of example and not limitation, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), a HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an InfiniBand interconnect, a Low Pin Count (LPC) bus, a memory bus, a MicroChannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable bus or a combination of two or more of these. Where appropriate, the bus 1110 may include one or more buses. Although embodiments of the present application describe and illustrate specific buses, the present application contemplates any suitable bus or interconnect.

[0157] In addition, in combination with the electronic detection method in the above embodiments, an embodiment of the present application can be implemented by providing a computer storage medium. Computer program instructions are stored on the computer storage medium; when the computer program instructions are executed by a processor, any one of the electronic detection methods in the above embodiments is implemented.

[0158] In addition, in combination with the electronic detection method in the above embodiments, an embodiment of the present application can be implemented by providing a computer program product. When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device is caused to execute the electronic detection method provided in any aspect of the above embodiments of the present application.

[0159] It should be clear that the present application is not limited to the specific configurations and processes described above and illustrated in the figures. For the sake of brevity, detailed descriptions of known methods are omitted here. In the above embodiments, several specific steps are described and illustrated as examples. However, the method process of the present application is not limited to the specific steps described and illustrated, and those skilled in the art can make various changes, modifications, and additions, or change the order between steps after understanding the spirit of the present application.

[0160] The functional blocks shown in the above-described structural block diagrams can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, it can be, for example, an electronic circuit, an application-specific integrated circuit (ASIC), appropriate firmware, a plug-in, a functional card, and so on. When implemented in software, the elements of the present application are programs or code segments for performing the required tasks. The program or code segment can be stored in a machine-readable medium or transmitted via a data signal carried in a carrier wave over a transmission medium or a communication link. A "machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical discs, hard disks, fiber optic media, radio frequency (RF) links, and so on. The code segment can be downloaded via a computer network such as the Internet, an intranet, and so on.

[0161] It should also be noted that in the exemplary embodiments mentioned in the present application, some methods or systems are described based on a series of steps or devices. However, the present application is not limited to the order of the above steps, that is, the steps can be executed in the order mentioned in the embodiments, or different from the order in the embodiments, or several steps can be executed simultaneously.

[0162] Aspects of the present disclosure have been described above with reference to the flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to embodiments of the present disclosure. It should be understood that each block in the flowcharts and / or block diagrams, and the combinations of blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device to produce a machine, such that the instructions executed by the processor of the computer or other programmable data processing device enable the implementation of the functions / actions specified in one or more blocks of the flowcharts and / or block diagrams. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field programmable logic circuit. It is also understood that each block in the block diagrams and / or flowcharts, and the combinations of blocks in the block diagrams and / or flowcharts, can also be implemented by dedicated hardware for performing the specified functions or actions, or by a combination of dedicated hardware and computer instructions.

[0163] As described above, this is only the specific implementation manner of the present application. Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems, modules, and units described above can refer to the corresponding processes in the foregoing method embodiments, and will not be elaborated herein. It should be understood that the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should all be covered within the protection scope of the present application.

Claims

1. A detection device, characterized in that, Comprising: An objective lens configured to converge a detection electron beam generated by an electron source and cause the converged detection electron beam to act on a test sample, so that the test sample generates a returned signal electron beam under the action of the detection electron beam; A sample stage configured to place the test sample; A detector disposed on a side of the objective lens away from the sample stage and on the optical axis of the objective lens. The detector is provided with a through hole, and the detector is configured to receive the signal electron beam returned by the test sample; A deflector assembly disposed in the lens barrel of the objective lens and configured to deflect the signal electron beam returned by the test sample away from the through hole of the detector.

2. The detection device according to claim 1, wherein, The deflector assembly includes a first deflector and a second deflector; The first deflector is configured to control the offset position of the signal electron beam in a first direction by adjusting its corresponding voltage gain; The second deflector is configured to control the offset position of the signal electron beam in a second direction by adjusting its corresponding voltage gain, and the second direction is a direction perpendicular to the first direction.

3. The detection device according to claim 2, wherein The sample stage is configured to drive the test sample to move along the second direction when the detection mode of the detection device is a continuous scanning mode; The second deflector is configured to deflect the signal electron beam returned by the test sample away from the through hole of the detector when its corresponding voltage gain is a target gain value.

4. The detection device according to claim 3, characterized in that, The detection device further includes a deflection controller configured to: When the detection mode is a continuous scanning mode, obtain a target field-of-view size of the observation field-of-view of the detection device; Determine the target gain value matching the target field-of-view size according to a preset matching relationship between the field-of-view size of the observation field-of-view and the voltage gain of the second deflector; Set the voltage gain of the second deflector to the target gain value.

5. The detection device according to claim 4, wherein The deflection controller is configured to: Determine a target gain range matching the target field-of-view size according to a preset matching relationship between the field-of-view size of the observation field-of-view and the voltage gain of the second deflector; Obtain the current scanning area of the test sample; Determine the target gain value within the target gain range according to the sample geometric features of the current scanning area, and the sample geometric features include at least one of the height of the test sample and the tilt angle of the test sample.

6. The detection device according to claim 5, wherein The deflection controller is configured to: Input the sample geometric features of the current scanning area into a gain adjustment model to obtain a gain adjustment value, and the gain adjustment model is a model trained according to historical sample geometric features and historical gain adjustment values; Adjust the gain midpoint value of the target gain range according to the gain adjustment value to obtain the target gain value.

7. The detection device according to claim 1, wherein The detection device further includes: A deceleration component disposed between the objective lens and the sample stage and configured to control the resolution of the detection device by adjusting its corresponding field voltage.

8. The detection device according to claim 7, characterized in that, The detection device further includes a deceleration component controller, and the deceleration component controller is configured to: Determine the voltage adjustment range of the deceleration component according to the target gain value; Obtain the current scanning area of the test sample; Determine the target voltage value within the voltage adjustment range according to the focusing parameters of the current scanning area; Set the corresponding field voltage to the target voltage value.

9. An electronic detection method, characterized in that, When applied to a detection device, the method includes: Obtain the detection mode of the detection device; When the detection mode is a continuous scanning mode, set the voltage gain of the second deflector to a target gain value, where the target gain value is the gain value that enables the signal electron beam generated by the test sample to deviate from the dead zone of the detector, and the second deflector is the deflector that controls the offset position of the signal electron beam in the moving direction of the sample stage; When the voltage gain of the second deflector is the target gain value, focus the detection electron beam on the test sample so that the test sample generates the signal electron beam under the action of the detection electron beam; Receive the signal electron beam generated by the test sample through the detector.

10. The method according to claim 9, characterized in that, After setting the voltage gain of the second deflector to the target gain value when the detection mode is a continuous scanning mode, the method further includes: According to the target gain value, set the field voltage corresponding to the deceleration component of the detection device to the target voltage value; When the voltage gain of the second deflector is the target gain value, focusing the detection electron beam on the test sample includes: When the voltage gain of the second deflector is the target gain value and the field voltage corresponding to the deceleration component is the target voltage value, focus the detection electron beam on the test sample.

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