Inkjet printing apparatus

Abstract

The invention discloses an ink jet printing apparatus. An inkjet printing apparatus according to an embodiment includes: a base portion; an inner tube which is disposed in the base portion, and in which ink moves; and a nozzle extending from the inner tube and from which the ink is discharged, in which the nozzle includes a coating layer disposed on an inner side surface and including at least AlOF. The structure of the ink-jet printing device can improve poor coating of the ink-jet printing device.

Description

Technical Field

[0001] The present invention relates to an inkjet printing device. Background Art

[0002] With the development of multimedia, the importance of display devices is increasing. For this reason, various display devices such as organic light emitting display devices (OLED: Organic Light Emitting Display) and liquid crystal display devices (LCD: Liquid Crystal Display) are being used.

[0003] As a device for displaying an image of a display device, it includes a display panel such as an organic light emitting display panel or a liquid crystal display panel. Among them, the light emitting display panel may include a light emitting element. For example, a light emitting diode (LED: Light Emitting Diode) includes an organic light emitting diode (OLED) using an organic substance as a fluorescent substance, an inorganic light emitting diode using an inorganic substance as a fluorescent substance, and the like.

[0004] In addition, an organic layer included in a display device or a wavelength conversion layer including quantum dots can be formed by using an inkjet printing device. A quantum dot or an organic layer can also be formed by performing a post-treatment process after inkjet printing any ink or solution. If a process using an inkjet printing device is performed, poor collision of ink may occur as the process time increases. Summary of the Invention

[0005] Technical Problem The technical problem to be solved by the present invention is to provide an inkjet printing device capable of improving poor collision of ink.

[0006] The technical problem of the present invention is not limited to the above-mentioned technical problems, and other technical problems not mentioned can be clearly understood by those skilled in the technical field to which the present invention belongs through the following description.

[0007] Technical Solution An inkjet printing device according to an embodiment for solving the above technical problem may include: a base portion; an internal tube disposed within the base portion, and ink moving within the internal tube; and a nozzle extending from the internal tube, and the ink being discharged from the nozzle, wherein the nozzle may include a coating layer disposed on an inner surface and at least including AlOF.

[0008] The nozzle includes: an inclined surface extending from the internal tube; and a discharge surface extending from the inclined surface toward the lower side of the nozzle, wherein the coating layer may be disposed on the discharge surface.

[0009] The coating layer may be spaced apart from the inclined surface and in direct contact with the discharge surface.

[0010] The coating layer may include: a first coating layer disposed on the inner surface of the nozzle; and a second coating layer disposed on the first coating layer.

[0011] The first coating layer may include at least one or more elements from Group 2 to Group 6 elements.

[0012] The first coating layer may include any one or more selected from Cd, Se, Te, Zn, S, Mg, In, Ga, Sb, Al, and Pb.

[0013] The thickness of the first coating layer may be 10 nm to 100 nm.

[0014] The second coating layer may be directly disposed on the first coating layer and may include AlOF.

[0015] The thickness of the second coating layer may be 40 nm to 900 nm.

[0016] The inkjet printing device may further include a third coating layer disposed on the second coating layer, and the third coating layer may include a metal oxide.

[0017] The thickness of the third coating layer may be 100 nm to 500 nm.

[0018] The thickness of the coating layer may be 50 nm to 1000 nm.

[0019] The coating layer may be configured as a single layer.

[0020] The coating layer may include at least one or more elements from Group 2 to Group 6 elements, AlOF, and a metal oxide.

[0021] In addition, an inkjet printing device according to an embodiment may include: a base portion; an internal tube disposed within the base portion and through which ink moves; and a nozzle extending from the internal tube and through which the ink is discharged, wherein the nozzle may include a coating layer disposed on the inner surface and including a liquid-repellent material.

[0022] The nozzle includes: an inclined surface extending from the internal tube; and a discharge surface extending from the inclined surface toward the lower side of the nozzle, wherein the coating layer may be disposed on the discharge surface.

[0023] The coating layer may be disposed spaced apart from the inclined surface.

[0024] The thickness of the coating layer may be from 1 nm to 100 nm.

[0025] In the thickness direction of the nozzle, the length of the coating layer may be 2 μm or more and may be less than the length of the inner surface of the nozzle.

[0026] The inkjet printing apparatus further includes: a discharge unit in which the nozzle is disposed; and a first liquid repellent layer disposed on the lower surface of the discharge unit, wherein the coating layer extends from a side surface of the first liquid repellent layer toward an inner edge of the nozzle.

[0027] Details of other embodiments are included in the detailed description and the drawings.

[0028] Technical Effects An inkjet printing apparatus according to an embodiment forms a coating layer on an inner surface of a nozzle, adjusts the thickness of the coating layer, and manages it, thereby preventing an increase in collision dispersion of ink. Accordingly, coating defects of the inkjet printing apparatus can be improved.

[0029] The effects according to the embodiments are not limited to the above-exemplified contents, and more various effects are included in this specification. Brief Description of the Drawings

[0030] Figure 1 is a plan view of a display device according to an embodiment.

[0031] Figure 2 is a schematic layout diagram showing wirings included in a display device according to an embodiment.

[0032] Figure 3 is an equivalent circuit diagram of a sub-pixel according to an embodiment.

[0033] Figure 4 is a cross-sectional view schematically showing a display device according to an embodiment.

[0034] Figure 5 is a cross-sectional view schematically showing a display area of a display device according to an embodiment.

[0035] Figure 6 is a cross-sectional view schematically showing a display device according to an embodiment.

[0036] Figure 7 is a schematic perspective view of an inkjet printing apparatus according to an embodiment.

[0037] Figure 8 is a schematic bottom view of a print head unit according to an embodiment.

[0038] Figure 9It is a schematic diagram showing the operation of a print head unit according to an embodiment.

[0039] Figure 10 It is a schematic diagram showing an ink circulation section, a suction section, and a print head unit according to an embodiment.

[0040] Figure 11 It is a schematic cross-sectional view of an inkjet head according to an embodiment.

[0041] Figure 12 It is an enlarged Figure 11 view of area A.

[0042] Figure 13 It is a cross-sectional view showing a nozzle of an inkjet printing apparatus according to another embodiment.

[0043] Figure 14 It is a cross-sectional view showing a nozzle of an inkjet printing apparatus according to still another embodiment.

[0044] Figure 15 It is a cross-sectional view showing a nozzle of an inkjet printing apparatus according to still another embodiment.

[0045] Explanation of reference numerals Detailed description of the embodiments

[0046] With reference to the accompanying drawings and the embodiments described in detail below, the advantages and features of the present invention and the methods for achieving these advantages and features will be clarified. However, the present invention is not limited to the embodiments disclosed below, and it can be implemented in various different forms. The present invention is provided only to make the disclosure of the present invention complete and to fully inform those with ordinary knowledge in the technical field to which the present invention pertains of the scope of the present invention. The present invention is defined only by the scope of the claims.

[0047] When an element or layer is referred to as being "on" another element or layer, it includes all cases where it is immediately above the other element or where there is another layer or other element interposed therebetween. Similarly, when an element or layer is referred to as being "below", "left", and "right" of another element or layer, it includes all cases where it is directly adjacent to the other element or where there is another layer or other material interposed therebetween. Throughout the specification, the same reference numerals refer to the same components.

[0048] Terms such as "first" and "second" may be used to describe various components, but these components should not be limited by these terms. These terms are only used to distinguish one component from another. Therefore, in the technical concept of the present invention, the first component mentioned below may also be named the second component.

[0049] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0050] Figure 1 is a plan view of a display device according to an embodiment.

[0051] Refer to Figure 1 , the display device 10 according to an embodiment can be applied to smart phones, mobile phones, tablet personal computers (PCs), personal digital assistants (PDAs: Personal Digital Assistant), portable multimedia players (PMPs: Portable Multimedia Player), televisions, game consoles, watch-type electronic devices, head-mounted displays, monitors of personal computers, notebook computers, car navigators, car dashboards, digital cameras, video cameras, external billboards, electronic screens, medical devices, inspection devices, various household appliances such as refrigerators and washing machines, or Internet of Things devices. In this specification, a television is used as an example of the display device 10 for illustration, and the television may have a high resolution or ultra-high resolution such as HD, UHD, 4K, 8K, etc.

[0052] Moreover, the display device 10 according to an embodiment can be classified into various types according to the display method. For example, the classification of the display device may include organic light-emitting display devices (OLEDs), inorganic electroluminescent display devices (inorganic EL), quantum dot light-emitting display devices (QEDs), micro-LED display devices (micro-LEDs), nano-LED display devices (nano-LEDs), plasma display devices (PDPs), field emission display devices (FEDs), cathode ray tube display devices (CRTs), liquid crystal display devices (LCDs), electrophoretic display devices (EPDs), etc. Hereinafter, as the display device 10, organic light-emitting display devices and inorganic light-emitting display devices are taken as examples for illustration. Unless otherwise specifically divided, the display device applied to the embodiments will be simply referred to as the display device. However, the embodiments are not limited to organic light-emitting display devices or inorganic light-emitting display devices, and within the scope of sharing the technical concept, they can also be applied to other display devices listed above or well-known in the technical field.

[0053] The display device 10 according to an embodiment may have a quadrilateral shape in a plan view, for example, may have a rectangular shape. When the display device 10 is a television, its long side is arranged to be located in the horizontal direction. However, it is not limited thereto, and its long side may be located in the longitudinal direction, or may be arranged in a rotatable manner, and its long side may be variably arranged in the horizontal or longitudinal direction.

[0054] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an effective area for displaying an image. The display area DPA may have a rectangular shape similar to the overall shape of the display device 10 in a plan view, but is not limited thereto.

[0055] The display area DPA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in rows and columns. The shape of each pixel PX in a plan view may be a rectangle or a square, but is not limited thereto, and may also be a rhombus shape in which each side is inclined relative to a direction of a side of the display device 10. The plurality of pixels PX may include pixels PX of multiple colors. For example, the plurality of pixels PX may include pixels of a first color of red, pixels of a second color of green, and pixels of a third color of blue, but is not limited thereto. The individual color pixels PX may be arranged in a stripe type or a PenTile type. ® Types are arranged alternately.

[0056] A non-display area NDA may be arranged around the display area DPA. The non-display area NDA may surround the display area DPA in whole or in part. The display area DPA may be in a rectangular shape, and the non-display area NDA may be arranged adjacent to four sides of the display area DPA. The non-display area NDA may constitute a frame of the display device 10.

[0057] A driving circuit or driving element for driving the display area DPA may be arranged in the non-display area NDA. Figure 1 The first non-display area NDA1 and the second non-display area NDA2 are arranged adjacent to the lower side of the second long side ( Figure 1 In the second non-display area NDA2 arranged adjacent to the first short side (the upper side of the display device 10), a pad portion is provided on the display substrate of the display device 10, and an external device EXD is mounted on the pad electrode of the pad portion. Examples of the external device EXD include a connection film, a printed circuit board, a driver chip DIC, a connection member, a wiring connection film, etc. Figure 1 In the third non-display area NDA3 adjacent to the left side of the display device 10, a scan driver SDR directly formed on the display substrate of the display device 10 may be arranged. However, the present invention is not limited thereto and the scan driver SDR may also be arranged on the second short side ( Figure 1 on the right side of the image).

[0058] Figure 2 It is a schematic layout diagram showing wirings included in a display device according to an embodiment.

[0059] Referring to Figure 2 , the display device 10 may include a plurality of wirings. The plurality of wirings may include scan lines SCL, sense signal lines SSL, data lines DTL, initialization voltage lines VIL, first voltage lines VDL, and second voltage lines VSL, etc. In addition, although not shown, other wirings may also be arranged in the display device 10.

[0060] The scan lines SCL and the sense signal lines SSL may extend along a first direction DR1. The scan lines SCL and the sense signal lines SSL may be connected to a scan driving unit SDR. The scan driving unit SDR may include a driving circuit. The scan driving unit SDR may be arranged on one side in the first direction DR1 of the display area DPA, but is not limited thereto. The scan driving unit SDR may be connected to a signal connection wiring CWL, and at least one end of the signal connection wiring CWL may form a pad WPD_CW on a pad area PDA in a non-display area NDA to be connected to an external device.

[0061] In addition, in this specification, the meaning of "connected" may not only represent a case where a certain component is connected to another component by physical contact with each other, but also represent a case where they are connected through another component. And this may be understood as an integrated component, in which a certain part is connected to another part through the integrated component. Further, the connection between a certain component and another component may be interpreted to include, in addition to the connection including direct contact, the meaning of electrical connection through another component.

[0062] The data lines DTL and the initialization voltage lines VIL may extend along a second direction DR2 intersecting the first direction DR1. In addition to the part extending along the second direction DR2, the initialization voltage lines VIL may also include a part branched from it along the first direction DR1. The first voltage lines VDL and the second voltage lines VSL may also include a part extending along the second direction DR2 and a part extending along the first direction DR1 connected thereto. The first voltage lines VDL and the second voltage lines VSL may have a mesh structure, but are not limited thereto. Although not shown in the figure, each pixel PX of the display device 10 may be connected to at least one data line DTL, initialization voltage line VIL, first voltage line VDL, and second voltage line VSL.

[0063] The data line DTL, the initialization voltage line VIL, the first voltage line VDL, and the second voltage line VSL can be electrically connected to at least one wiring pad WPD. Each wiring pad WPD can be disposed in the pad region PDA. In one embodiment, the wiring pad WPD_DT (hereinafter referred to as the "data pad") of the data line DTL can be disposed in the pad region PDA on one side in the second direction DR2 of the display region DPA, and the wiring pad WPD_Vint (hereinafter referred to as the "initialization voltage pad") of the initialization voltage line VIL, the wiring pad WPD_VDD (hereinafter referred to as the "first power supply pad") of the first voltage line VDL, and the wiring pad WPD_VSS (hereinafter referred to as the "second power supply pad") of the second voltage line VSL can be disposed in the pad region PDA on the other side in the second direction DR2 of the display region DPA. As another example, the data pad WPD_DT, the initialization voltage pad WPD_Vint, the first power supply pad WPD_VDD, and the second power supply pad WPD_VSS can also all be disposed in the same region, for example, in the non-display region NDA above the display region DPA. An external device EXD can be mounted on the wiring pad WPD. The external device EXD can be mounted on the wiring pad WPD by an anisotropic conductive film, ultrasonic bonding, or the like.

[0064] Each pixel PX or sub-pixel SPXn (n is an integer from 1 to 3) of the display device 10 includes a pixel driving circuit. The above-mentioned wiring can apply a driving signal to each pixel driving circuit when passing through each pixel PX or its periphery. The pixel driving circuit can include transistors and capacitors. The number of transistors and capacitors of each pixel driving circuit can be changed into various types. According to one embodiment, each sub-pixel SPXn of the display device 10 can have a 3T1C structure in which the pixel driving circuit includes three transistors and one capacitor. Hereinafter, the 3T1C structure will be used as an example to illustrate the pixel driving circuit, but it is not limited thereto, and other various modified structures of the sub-pixel SPXn such as 2T1C structure, 7T1C structure, and 6T1C structure can also be applied.

[0065] Figure 3 is an equivalent circuit diagram of a sub-pixel according to one embodiment.

[0066] Referring to Figure 3 , each sub-pixel SPX of the display device 10 according to one embodiment, in addition to the light-emitting element ED, includes three transistors DTR, STR1, STR2, and one storage capacitor CST.

[0067] The light-emitting element ED emits light according to the current supplied through the driving transistor DTR. The light-emitting element ED can be implemented using an inorganic light-emitting diode, an organic light-emitting diode, a micro light-emitting diode, a nano light-emitting diode, or the like.

[0068] The first electrode (i.e., the anode electrode) of the light-emitting element ED may be connected to the source electrode of the driving transistor DTR, and the second electrode (i.e., the cathode electrode) may be connected to the second power supply line ELVSL that supplies a low-potential voltage (second power supply voltage) lower than the high-potential voltage (first power supply voltage) of the first power supply line ELVDL.

[0069] The driving transistor DTR adjusts the current flowing from the first power supply line ELVDL that supplies the first power supply voltage to the light-emitting element ED according to the voltage difference between the gate electrode and the source electrode. The gate electrode of the driving transistor DTR may be connected to the first electrode of the first transistor STR1, the source electrode may be connected to the first electrode of the light-emitting element ED, and the drain electrode may be connected to the first power supply line ELVDL to which the first power supply voltage is applied.

[0070] The first transistor (also referred to as "first switching transistor") STR1 is turned on by the scanning signal of the scanning line SCL and connects the data line DTL to the gate electrode of the driving transistor DTR. The gate electrode of the first transistor STR1 may be connected to the scanning line SCL, the first electrode may be connected to the gate electrode of the driving transistor DTR, and the second electrode may be connected to the data line DTL.

[0071] The second transistor STR2 (also referred to as "second switching transistor") is turned on by the sensing signal of the sensing signal line SSL and connects the initialization voltage wiring VIL to the source electrode of the driving transistor DTR. The gate electrode of the second transistor STR2 may be connected to the sensing signal line SSL, the first electrode may be connected to the initialization voltage wiring VIL, and the second electrode may be connected to the source electrode of the driving transistor DTR.

[0072] In one embodiment, the first electrodes of the first transistor STR1 and the second transistor STR2 may be source electrodes, and the second electrodes may be drain electrodes, but are not limited thereto, and the opposite may also be the case.

[0073] The capacitor CST is formed between the gate electrode and the source electrode of the driving transistor DTR. The storage capacitor CST stores the voltage difference between the gate voltage and the source voltage of the driving transistor DTR.

[0074] The driving transistor DTR, the first transistor STR1, and the second transistor STR2 may be formed of thin film transistors. In addition, in Figure 3 the description has been centered on the case where the driving transistor DTR, the first switching transistor STR1, and the second switching transistor STR2 are N-type metal oxide semiconductor field effect transistors (MOSFETs: Metal Oxide Semiconductor Field Effect Transistors), but it is not limited thereto. That is, the driving transistor DTR, the first switching transistor STR1, and the second switching transistor STR2 may be P-type MOSFETs, or some may be N-type MOSFETs and the others may be P-type MOSFETs.

[0075] Figure 4 is a cross-sectional view schematically showing a display device according to an embodiment. Figure 5 is a cross-sectional view schematically showing a display area of a display device according to an embodiment.

[0076] Referring to Figure 4 and Figure 5 , a display device 10 according to an embodiment may include a substrate SUB, a light-emitting element layer EML, a thin film encapsulation layer TFEL, a filling layer FIL, a wavelength conversion layer WCL, a color filter layer CFL, a counter substrate TSUB, and a bonding member SEL.

[0077] The substrate SUB may be an insulating substrate. The substrate SUB may include a transparent material. For example, the substrate SUB may include a transparent insulating material such as glass or quartz. The substrate SUB may be a rigid substrate. And, without being limited thereto, the substrate SUB may also include a plastic such as polyimide, or may have flexible characteristics such as bendable, foldable, or rollable.

[0078] The light-emitting element layer EML may be disposed on the substrate SUB. The light-emitting element layer EML may include a plurality of switching elements and a plurality of light-emitting elements ED disposed in each sub-pixel. The plurality of switching elements may drive the plurality of light-emitting elements ED to emit light from the plurality of light-emitting elements ED.

[0079] The thin film encapsulation layer TFEL may be disposed on the light-emitting element layer EML. The thin film encapsulation layer TFEL includes an organic film disposed between a plurality of inorganic films and can protect the light-emitting element layer EML from external moisture and oxygen.

[0080] A counter substrate T SUB may be arranged to face the substrate SUB. The counter substrate T SUB may be sealed with the substrate SUB together with the light-emitting element layer EML. The counter substrate T SUB may include a transparent material. For example, the counter substrate T SUB may include a transparent insulating material such as glass, quartz, etc.

[0081] The color filter layer CFL may be arranged on one surface of the counter substrate T SUB. The color filter layer CFL may filter the light incident from the outside to reduce the reflection of the external light and improve the color characteristics of the light emitted through the wavelength conversion layer WCL.

[0082] The wavelength conversion layer WCL may be arranged on one surface of the color filter layer CFL. The wavelength conversion layer WCL may convert the wavelength of the light emitted from the light-emitting element layer EML to emit red light, green light, and blue light.

[0083] The filling layer FIL may be arranged between the substrate SUB and the counter substrate T SUB. The filling layer FIL may protect the display area of the display device 10 by filling the space between the substrate SUB and the counter substrate T SUB.

[0084] The substrate SUB and the counter substrate T SUB may be bonded by a bonding member SEL. The bonding member SEL may bond the substrate SUB and the counter substrate T SUB to each other to seal the light-emitting element layer EML. The bonding member SEL may be arranged in the non-display area NDA and formed to surround the display area DPA of the display device 10.

[0085] Hereinafter, the configuration of the display device according to an embodiment will be described in detail with reference to other drawings.

[0086] Figure 6 It is a cross-sectional view schematically showing a display device according to an embodiment. Figure 6 It shows a part of the display area DPA of the display device 10.

[0087] Combined Figure 5 Refer to Figure 6 , the light-emitting element layer EML may be arranged on the substrate SUB. The light-emitting element layer EML may include a buffer layer 120, a lower metal layer BML, a first insulating layer 130, a semiconductor layer ACT, a gate electrode GE, a gate insulating layer 140, a second insulating layer 150, a source electrode SE, a drain electrode DE, a third insulating layer 155, a fourth insulating layer 160, a light-emitting element ED, and a pixel defining film 170.

[0088] The buffer layer 120 may be arranged on the substrate SUB. The buffer layer 120 may prevent foreign substances such as moisture from penetrating through the substrate SUB and reaching the elements arranged on the buffer layer 120.

[0089] The buffer layer 120 may include inorganic substances such as SiO2, SiN x and SiON, and may be formed as a single layer or multiple layers, but is not limited thereto.

[0090] The lower metal layer BML may be disposed on the buffer layer 120. The lower metal layer BML may block external light or light emitted from the light-emitting element described later from entering the semiconductor layer ACT. Accordingly, leakage current generated by light in the thin-film transistor described later can be prevented, or the generation of leakage current can be reduced.

[0091] The lower metal layer BML may be formed of a substance that blocks light and has conductivity. In some embodiments, the lower metal layer BML may include a single substance or an alloy of metals such as silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), neodymium (Nd), etc. In some embodiments, the lower metal layer BML may be configured as a single-layer or multi-layer structure. For example, when the lower metal layer BML is configured as a multi-layer structure, the lower metal layer BML may be a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or a stacked structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al2O3), but is not limited thereto.

[0092] In some embodiments, the lower metal layer BML may be provided in multiple numbers corresponding to each semiconductor layer ACT, and may overlap with the semiconductor layer ACT. In some embodiments, the width of the lower metal layer BML may be greater than the width of the semiconductor layer ACT.

[0093] In some embodiments, the lower metal layer BML may also be a part of a data line, a power line, a wiring that electrically connects thin-film transistors not shown in the figure and the thin-film transistors shown in the figure ( Figure 6 GE, ACT, DE, SE). In some embodiments, the lower metal layer BML may be formed of a substance having a resistance smaller than that of the source electrode SE and the drain electrode DE.

[0094] The first insulating layer 130 may be disposed on the lower metal layer BML. The first insulating layer 130 may function to electrically insulate the lower metal layer BML from the semiconductor layer ACT. The first insulating layer 130 may cover the lower metal layer BML.

[0095] The first insulating layer 130 may include inorganic substances such as SiO2, SiN x , SiON, Al2O3, TiO2, Ta2O5, HfO2, ZrO2, etc., but is not limited thereto.

[0096] The semiconductor layer ACT may be disposed on the first insulating layer 130. The semiconductor layer ACT may be disposed in the display area DPA to correspond to the first light-emitting area ELA1, the second light-emitting area ELA2, and the third light-emitting area ELA3, respectively. In addition, the semiconductor layer ACT may be disposed to overlap with each of the lower metal layers BML, thereby suppressing the generation of photocurrent in the semiconductor layer ACT.

[0097] The semiconductor layer ACT may also include an oxide semiconductor. In some embodiments, the semiconductor layer ACT may be formed of a Zn oxide-based material such as Zn oxide, In-Zn oxide, Ga-In-Zn oxide, etc., or may be an IGZO (In-Ga-Zn-O) semiconductor in which metals such as indium (In) and gallium (Ga) are contained in ZnO. However, it is not limited thereto. For example, the semiconductor layer ACT may also include amorphous silicon or polycrystalline silicon, etc.

[0098] The gate electrode GE may be disposed on the semiconductor layer ACT. The gate electrode GE may be disposed so as to overlap with the semiconductor layer ACT in the display area DPA. In some embodiments, the width of the gate electrode GE may be less than the width of the semiconductor layer ACT, but it is not limited thereto.

[0099] In consideration of the adhesion to adjacent layers, the surface flatness of the stacked layers, and processability, etc., the gate electrode GE may include one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), and may be formed as a single layer or multiple layers, but it is not limited thereto.

[0100] The gate insulating layer 140 may be disposed between the semiconductor layer ACT and the gate electrode GE. The gate insulating layer 140 may function to insulate the semiconductor layer ACT from the gate electrode GE. In some embodiments, the gate insulating layer 140 is not configured as a single layer disposed on one side surface in the third direction DR3 of the substrate SUB, but is configured in a shape that is partially patterned. The width of the gate insulating layer 140 may be less than the width of the semiconductor layer ACT and may be greater than the width of the gate electrode GE, but it is not limited thereto.

[0101] The gate insulating layer 140 may include an inorganic substance. For example, the gate insulating layer 140 may include the inorganic substances exemplified in the description of the first insulating layer 130.

[0102] The second insulating layer 150 may be disposed on the gate insulating layer 140 so as to cover the semiconductor layer ACT and the gate electrode GE. In some embodiments, the second insulating layer 150 may function as a planarization film that provides a flat surface.

[0103] The second insulating layer 150 may include an organic material. In some embodiments, the second insulating layer 150 may include at least one of photo acryl (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyarylether, heterocyclic polymer, parylene, fluorine-based polymer, epoxy resin, benzocyclobutene series resin, siloxane series resin, and silane resin, but is not limited thereto.

[0104] In some embodiments, the second insulating layer 150 may include an inorganic material. For example, the second insulating layer 150 may include the inorganic materials exemplified in the description of the first insulating layer 130.

[0105] The source electrode SE and the drain electrode DE may be disposed on the second insulating layer 150 with a space therebetween. The source electrode SE and the drain electrode DE may be connected to the semiconductor layer ACT through contact holes penetrating the second insulating layer 150, respectively. The source electrode SE may penetrate not only the second insulating layer 150 but also the first insulating layer 130 to be connected to the lower metal layer BML. When the lower metal layer BML is a part of a wiring for transmitting a signal, voltage, etc., the source electrode SE may be connected to the lower metal layer BML and electrically coupled to the lower metal layer BML to receive the voltage, etc. provided to the wiring. Alternatively, when the lower metal layer BML is not a separate wiring but a floating pattern, the voltage, etc. provided to the source electrode SE may be transmitted to the lower metal layer BML, etc.

[0106] The source electrode SE and the drain electrode DE may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multi-layer or a single layer. In some embodiments, the source electrode SE and the drain electrode DE may be configured as a multi-layer structure of Ti / Al / Ti, but is not limited thereto.

[0107] The semiconductor layer ACT, gate electrode GE, source electrode SE, and drain electrode DE described above can form a thin-film transistor as a switching element. In some embodiments, the thin-film transistors can be respectively located in the first light-emitting region ELA1, the second light-emitting region ELA2, and the third light-emitting region ELA3. In some embodiments, a part of the thin-film transistors can also be located in the non-light-emitting region NELA.

[0108] The third insulating layer 155 can be disposed on the second insulating layer 150 to cover the thin-film transistor. In some embodiments, the third insulating layer 155 can be a passivation layer.

[0109] In some embodiments, the third insulating layer 155 can include inorganic substances. For example, the third insulating layer 155 can include the inorganic substances exemplified in the description of the first insulating layer 130.

[0110] The fourth insulating layer 160 can be disposed on the third insulating layer 155 in a manner covering the third insulating layer 155. In some embodiments, the fourth insulating layer 160 can be a planarization film.

[0111] The fourth insulating layer 160 can be formed of an organic substance. In some embodiments, the fourth insulating layer 160 can include acrylate resins, epoxy resins, imide resins, ester resins, etc., or can include photosensitive organic substances, but is not limited thereto.

[0112] In the display area DPA, an anode electrode ANO can be provided on the fourth insulating layer 160.

[0113] The anode electrode ANO can overlap with the first light-emitting region ELA1, the second light-emitting region ELA2, and the third light-emitting region ELA3 respectively, and at least a part can extend to the non-light-emitting region NELA. The anode electrode ANO can be connected to the drain electrode DE of the thin-film transistor.

[0114] In some embodiments, the anode electrode ANO can be a reflective electrode. In this case, the anode electrode ANO can be a metal layer including metals such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, and Cr. In another embodiment, the anode electrode ANO can further include a metal oxide layer stacked on the metal layer. In an exemplary embodiment, the anode electrode ANO can have a multilayer structure. Exemplarily, a bilayer structure such as ITO / Ag, Ag / ITO, ITO / Mg, ITO / MgF or a trilayer structure such as ITO / Ag / ITO.

[0115] The pixel defining film 170 may be disposed on the anode electrode ANO. The pixel defining film 170 may respectively define a first light emitting region ELA1, a second light emitting region ELA2, and a third light emitting region ELA3 by openings exposing the anode electrode ANO.

[0116] The pixel defining film 170 may overlap with the light blocking region BA of the color filter layer CFL described later in the third direction DR3. In addition, the pixel defining film 170 may also overlap with the bank BK described later in the third direction DR3.

[0117] The pixel defining film 170 may include organic insulating materials such as polyacrylates resin, epoxy resin, phenolic resin, polyamides resin, polyimides resin, unsaturated polyesters resin, poly phenylenethers resin, polyphenylenesulfidesresin, or benzocyclobutene (BCB), but is not limited thereto.

[0118] The light emitting layer OL may be disposed on the anode electrode ANO. In some embodiments, the light emitting layer OL may have a shape of a continuous film formed across a plurality of light emitting regions ELA1, ELA2, ELA3 and the non-light emitting region NELA. In some embodiments, the light emitting layer OL may be only located in the display area DPA, but is not limited thereto. For example, a part of the light emitting layer OL may also be disposed in the non-display area NDA.

[0119] In some embodiments, the light emitting layer OL may include an organic layer containing an organic substance. The organic layer includes an organic light emitting layer, and optionally may include a hole injection / transport layer and / or an electron injection / transport layer as auxiliary layers for assisting light emission.

[0120] In some embodiments, when the display device 10 is a micro LED display device, a nano LED display device, etc., the light emitting layer OL may further include an inorganic substance such as an inorganic semiconductor.

[0121] The cathode electrode CE may be disposed on the light emitting layer OL. In some embodiments, the cathode electrode CE may be disposed on the light emitting layer OL and have a shape of a continuous film formed across a plurality of light emitting regions ELA1, ELA2, ELA3 and the non-light emitting region NELA. In other words, the cathode electrode CE may completely cover the light emitting layer OL.

[0122] The cathode electrode CE can be semi-transmissive or transmissive. When the thickness of the cathode electrode CE is in the range of several tens of angstroms to several hundreds of angstroms, the cathode electrode CE can be semi-transmissive. In some embodiments, when the cathode electrode CE has the semi-transmissive property, the cathode electrode CE can include at least one of Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, or their compounds or mixtures (for example, a mixture of Ag and Mg) and materials having a multilayer structure such as LiF / Ca, LiF / Al. Additionally, the cathode electrode CE can include a transparent conductive oxide and have transmissivity. In some embodiments, when the cathode electrode CE has the transmissive property, the cathode electrode CE can be tungsten oxide (W x O x : tungsten oxide), titanium oxide (TiO2: Titanium oxide), indium tin oxide (ITO: indium tin oxide), indium zinc oxide (IZO: indium zinc oxide), zinc oxide (ZnO: zinc oxide), indium tin zinc oxide (ITZO: indium tin zinc oxide), magnesium oxide (MgO: magnesium oxide), etc.

[0123] The anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE can form a light-emitting element ED. For example, the anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE overlapping with the first light-emitting region ELA1 can form a first light-emitting element, the anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE overlapping with the second light-emitting region ELA2 can form a second light-emitting element, and the anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE overlapping with the third light-emitting region ELA3 can form a third light-emitting element. The first light-emitting element, the second light-emitting element, and the third light-emitting element can respectively emit outgoing light. The peak wavelength of the outgoing light emitted from each light-emitting element ED can be 440 nm or more and 480 nm or less. That is, the outgoing lights L1, L2, L3 can be blue lights.

[0124] In addition, the thin-film encapsulation layer TFEL can be disposed on the light-emitting element layer EML. The thin-film encapsulation layer TFEL can be disposed on the cathode electrode CE. The thin-film encapsulation layer TFEL can function to protect the underlying components from the influence of external foreign substances such as moisture. The thin-film encapsulation layer TFEL is commonly disposed on the first light-emitting region ELA1, the second light-emitting region ELA2, the third light-emitting region ELA3, and the non-light-emitting region NELA.

[0125] The thin film encapsulation layer TFEL may include a lower inorganic layer TFE1, an organic layer TFE2, and an upper inorganic layer TFE3 that are sequentially stacked on the cathode electrode CE.

[0126] The lower inorganic layer TFE1 may completely cover the cathode electrode CE in the display area DPA, thereby covering the first light-emitting element, the second light-emitting element, and the third light-emitting element. The organic layer TFE2 may be disposed on the lower inorganic layer TFE1 to cover the first light-emitting element, the second light-emitting element, and the third light-emitting element. The upper inorganic layer TFE3 may be disposed on the organic layer TFE2 to completely cover the organic layer TFE2.

[0127] In some embodiments, the lower inorganic layer TFE1 and the upper inorganic layer TFE3 may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), lithium fluoride, etc., but are not limited thereto.

[0128] In some embodiments, the organic layer TFE2 may be made of acrylate resin, methacrylate resin, polyisoprene resin, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, etc., but are not limited thereto.

[0129] In addition, a counter substrate TSUB may be disposed on the substrate SUB on which the light-emitting element layer EML and the thin film encapsulation layer TFEL are disposed. A color filter layer CFL may be disposed on one surface of the counter substrate TSUB, and a wavelength conversion layer WCL may be disposed on one surface of the color filter layer CFL. In addition, the display device 10 may include a low refractive index layer LR and a first cover layer CPL1 disposed between the color filter layer CFL and the wavelength conversion layer WCL, and may include a spacer layer SPC disposed on one surface of the wavelength conversion layer WCL.

[0130] The color filter layer CFL may be disposed on the other side in the third direction DR3 of the counter substrate TSUB, in other words, may be disposed between the counter substrate TSUB and the substrate SUB. The color filter layer CFL may include filtering pattern regions 321a, 322a, 323a and a light-blocking pattern portion BM. The light-blocking pattern portion BM may surround the filtering pattern regions 321a, 322a, 323a. The filtering pattern regions 321a, 322a, 323a of the color filter layer CFL may define light-transmitting regions TA1, TA2, TA3, and the light-blocking pattern portion BM may define a light-blocking region BA.

[0131] As Figure 6As shown, the color filter layer CFL may include a first color filter 321, a second color filter 322, and a third color filter 323. The first color filter 321 may absorb both a second light and a third light other than the first light, the second color filter 322 may absorb both the first light and the third light other than the second light, and the third color filter 323 may absorb both the first light and the second light other than the third light. In other words, the first color filter 321 may transmit the first light, the second color filter 322 may transmit the second light, and the third color filter 323 may transmit the third light.

[0132] In some embodiments, the first color filter 321 may be a blue color filter and may include a blue colorant. In this specification, the colorant is a concept including both a dye and a pigment. The first color filter 321 may include a base resin, and the blue colorant may be dispersed in the base resin. In some embodiments, the second color filter 322 may be a red color filter and may include a red colorant. The second color filter 322 may include a base resin, and the red colorant may be dispersed in the base resin. In some embodiments, the third color filter 323 may be a green color filter and may include a green colorant. The third color filter 323 may include a base resin, and the green colorant may be dispersed in the base resin.

[0133] The first color filter 321 may include a first filtering pattern region 321a and a first light-blocking pattern region 321b surrounding the first filtering pattern region 321a, the second color filter 322 may include a second filtering pattern region 322a and a second light-blocking pattern region 322b surrounding the second filtering pattern region 322a, and the third color filter 323 may include a third filtering pattern region 323a and a third light-blocking pattern region 323b surrounding the third filtering pattern region 323a.

[0134] Specifically, the first filtering pattern region 321a of the first color filter 321 overlaps with the first light-transmitting region TA1. The first light-blocking pattern region 321b of the first color filter 321 surrounds the first filtering pattern region 321a that overlaps with the first light-transmitting region TA1, and may not overlap with the second light-transmitting region TA2 and the third light-transmitting region TA3, and overlaps with the light-blocking region BA. The second filtering pattern region 322a of the second color filter 322 overlaps with the second light-transmitting region TA2. The second light-blocking pattern region 322b of the second color filter 322 surrounds the second filtering pattern region 322a that overlaps with the second light-transmitting region TA2, and may not overlap with the first light-transmitting region TA1 and the third light-transmitting region TA3, and overlaps with the light-blocking region BA. The third filtering pattern region 323a of the third color filter 323 overlaps with the third light-transmitting region TA3. The third light-blocking pattern region 323b of the third color filter 323 surrounds the third filtering pattern region 323a that overlaps with the third light-transmitting region TA3, and may not overlap with the first light-transmitting region TA1 and the second light-transmitting region TA2, and overlaps with the light-blocking region BA. In other words, the filtering pattern regions 321a, 322a, 323a of the color filter component may include the first filtering pattern region 321a of the first color filter 321, the second filtering pattern region 322a of the second color filter 322, and the third filtering pattern region 323a of the third color filter 323. The light-blocking pattern portion BM may have a structure in which the first light-blocking pattern region 321b of the first color filter 321, the second light-blocking pattern region 322b of the second color filter 322, and the third light-blocking pattern region 323b of the third color filter 323 are stacked.

[0135] The first filtering pattern region 321a of the first color filter 321 can function as a blocking filter that blocks red light and green light. Specifically, the first filtering pattern region 321a can selectively transmit the first light (e.g., blue light), and can block or absorb the second light (e.g., red light) and the third light (e.g., green light).

[0136] The second filtering pattern region 322a of the second color filter 322 can function as a blocking filter that blocks blue light and green light. Specifically, the second filtering pattern region 322a can selectively transmit the second light (e.g., red light), and can block or absorb the first light (e.g., blue light) and the third light (e.g., green light).

[0137] The third filtering pattern region 323a of the third color filter 323 can function as a blocking filter that blocks blue light and red light. Specifically, the third filtering pattern region 323a can selectively transmit the third light (e.g., green light), and can block or absorb the first light (e.g., blue light) and the second light (e.g., red light).

[0138] In some embodiments, the light-blocking pattern portion BM may have a structure in which a first light-blocking pattern region 321b, a second light-blocking pattern region 322b, and a third light-blocking pattern region 323b are sequentially stacked in a third direction, but is not limited thereto. For example, the light-blocking pattern portion BM may also be formed not by using the above-described color filters 321, 322, and 323, but as a separate organic light-blocking material through a process such as coating the organic light-blocking material and exposure. Hereinafter, for ease of explanation, the case where the light-blocking pattern has a structure in which a first light-blocking pattern region 321b, a second light-blocking pattern region 322b, and a third light-blocking pattern region 323b are sequentially stacked in a third direction will be mainly described. The light-blocking pattern portion BM may absorb all of the first light, the second light, and the third light through the above-described configuration.

[0139] On one surface of the color filter layer CFL, for example, on the other side in the third direction DR3, a low refractive index layer LR may be disposed. The low refractive index layer LR has a refractive index lower than those of a first light-transmitting member TPL, a second light-transmitting member WCL1, and a third light-transmitting member WCL2 to be described later, so that it can guide total reflection of light traveling from the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2 to the low refractive index layer LR, and thus play a role in recycling light.

[0140] The low refractive index layer LR may include an organic substance. In some embodiments, the refractive index of the low refractive index layer LR may be 1.3 or less. When the refractive index of the low refractive index layer LR is 1.3 or less, due to a large refractive index difference from the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2, total reflection of light can be sufficiently generated.

[0141] In addition, the low refractive index layer LR may play a role in compensating for the step difference generated by the light-blocking pattern regions 321b, 322b, and 323b of the color filter layer CFL to flatten the color filter layer CFL. Accordingly, the first cover layer CPL1 disposed on the low refractive index layer LR can be formed flat.

[0142] The first cover layer CPL1 may be disposed on one surface of the low refractive index layer LR so as to cover the low refractive index layer LR. The first cover layer CPL1 can prevent impurities such as moisture or air from penetrating from the outside into the low refractive index layer LR or the color filter layer CFL to damage or contaminate the light-blocking pattern portion BM of the low refractive index layer LR and the color filter member, and the filtering pattern regions 321a, 322a, and 323a.

[0143] The first cover layer CPL1 may include an inorganic substance. In some embodiments, the first cover layer CPL1 may include, for example, SiO2, SiNx inorganic substances such as SiON, and can be formed into a single layer or multiple layers, but not limited thereto.

[0144] The wavelength conversion layer WCL can be disposed on a surface of the first cover layer CPL1. The wavelength conversion layer WCL can include a bank BK, a first light-transmitting member TPL, a second light-transmitting member WCL1, a third light-transmitting member WCL2, and a second cover layer CPL2.

[0145] Based on Figure 6 as a reference, the bank BK can be disposed on the other side of the first cover layer CPL1 in the third direction DR3 and spaced apart in the second direction DR2 to form a space for accommodating the light-transmitting members. That is, the bank BK can function to demarcate the space for arranging the light-transmitting members. The bank BK can be in direct contact with the other surface of the first cover layer CPL1 in the third direction DR3. The bank BK can surround the light-transmitting members on a plane. The bank BK can be disposed to overlap with the non-light-emitting region NELA and the light-blocking region BA. The bank BK can not overlap with the light-emitting regions ELA1, ELA2, ELA3, and the light-transmitting regions TA1, TA2, TA3.

[0146] In some embodiments, the bank BK can include an organic substance having photocurability or an organic substance having photocurability and containing a light-blocking substance, but not limited thereto.

[0147] The first light-transmitting member TPL can overlap with the first light-transmitting region TA1, the second light-transmitting member WCL1 can overlap with the second light-transmitting region TA2, and the third light-transmitting member WCL2 can overlap with the third light-transmitting region TA3. In addition, the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2 can be referred to as a wavelength conversion layer or a wavelength conversion material layer.

[0148] The first light-transmitting member TPL can be disposed in the space demarcated by the bank BK and overlap with the first light-emitting region ELA1 and the first light-transmitting region TA1 in the third direction DR3. The first light-transmitting member TPL can be in direct contact with the first cover layer CPL1 and the bank BK.

[0149] The first light-transmitting member TPL can be a light-transmitting pattern that transmits incident light. The first light-transmitting member TPL can transmit the light of the first color emitted from the light-emitting element layer EML as it is. Specifically, the emitted light provided by the first light-emitting element can be blue light as described above, and transmits through the first light-transmitting member TPL and the first filtering pattern region 321a of the first color filter 321 and is emitted toward the outside of the display device 10. In other words, the first emitted light L1 that transmits through the first light-transmitting region TA1 in the first light-emitting region ELA1 and is emitted toward the outside can be blue light.

[0150] The first light-transmitting member TPL may include a base resin 330 and a light-scattering body 331.

[0151] The base resin 330 may be formed of an organic material having a high transmittance. In some embodiments, the base resin 330 may include an organic material such as an epoxy resin, an acrylate resin, a cardo resin, or an imide resin, but is not limited thereto.

[0152] The light-scattering body 331 may have a refractive index different from that of the base resin 330 and form an optical interface with the base resin 330. The light-scattering body 331 may be a light-scattering particle. The light-scattering body 331 may scatter light in a random direction independent of the incident direction of the incident light without substantially converting the wavelength of the light transmitted through the first light-transmitting region TA1.

[0153] The light-scattering body 331, as a material that scatters at least a part of the transmitted light, may include metal oxide particles or organic particles. In some embodiments, the light-scattering body 331 may include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2) as the metal oxide. As the organic particles, acrylate resins or polyurethane resins may be included, but are not limited thereto.

[0154] The second light-transmitting member WCL1 may be disposed in the space partitioned by the bank BK and overlap with the second light-emitting region ELA2 and the second light-transmitting region TA2 in the third direction DR3. The second light-transmitting member WCL1 may be in direct contact with the first cover layer CPL1 and the bank BK.

[0155] The second light-transmitting member WCL1 may be a wavelength-converting pattern that converts or shifts the peak wavelength of the incident light to another specific peak wavelength and emits the light. The second light-transmitting member WCL1 may convert the light of the first color emitted from the light-emitting element layer EML into the light of the second color and emit it. Specifically, as described above, the emitted light provided from the second light-emitting element may be blue light and transmit through the second light-transmitting member WCL1 and the second filtering pattern region 322a of the second color filter 322, and thus be converted into red light having a peak wavelength in the range of about 610 nm to about 650 nm and emitted toward the outside of the display device 10. In other words, the second emitted light L2 that transmits through the second light-transmitting region TA2 and is emitted toward the outside in the second light-emitting region ELA2 may be red light.

[0156] The second light-transmitting member WCL1 may include a base resin 330, a light-scattering body 331 dispersedly arranged in the base resin 330, and a first wavelength shifter 332 dispersedly arranged in the base resin 330.

[0157] The first wavelength shifter 332 can convert or shift the peak wavelength of incident light to another specific peak wavelength. The first wavelength shifter 332 can convert the emitted light, which is blue light provided by the second light-emitting element, into red light having a peak wavelength in the range of about 610 nm to about 650 nm and emit it.

[0158] In some embodiments, the first wavelength shifter 332 can be a quantum dot, a quantum rod, or a phosphor, but is not limited thereto. Hereinafter, for ease of explanation, the case where the first wavelength shifter 332 is a quantum dot will be mainly described. The quantum dot can be a particulate material that emits a specific color when an electron jumps from the conduction band to the valence band. The quantum dot can be a semiconductor nanocrystal material. The quantum dot can have a specific band gap according to its composition and size, and emit light with an inherent wavelength after absorbing light. Examples of the semiconductor nanocrystals of the quantum dot can include group-IV family nanocrystals, group-II-VI family compound nanocrystals, group-III-V family compound nanocrystals, group-IV-VI family nanocrystals, or a combination thereof.

[0159] The group-II-VI compound can be selected from the group consisting of: binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and mixtures thereof.

[0160] The III-V compound can be selected from the group consisting of: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0161] The IV-VI compound can be selected from the group consisting of: binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The Group-IV element can be selected from the group consisting of Si, Ge and mixtures thereof. The Group-IV compound can be a binary compound selected from the group consisting of SiC, SiGe and mixtures thereof.

[0162] Herein, the binary compound, ternary compound or quaternary compound can be present in the particles at a uniform concentration, or can be present in the same particle in a state where the concentration distribution is locally different. In addition, it can also have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell can have a concentration gradient in which the concentration of the elements present in the shell decreases towards the center.

[0163] In some embodiments, the quantum dots may have the aforementioned core-shell structure, which includes a core containing nanocrystals and a shell surrounding the core. The shell of the quantum dots may serve as a protective layer for preventing chemical denaturation of the core to maintain semiconductor properties and / or as a charging layer for imparting electrophoretic properties to the quantum dots. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center. Examples of the shell of the quantum dots may include metal oxides or non-metal oxides, semiconductor compounds, or combinations thereof, etc.

[0164] For example, the metal oxide or the non-metal oxide may include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and CoMn2O4, but the present invention is not limited thereto.

[0165] In addition, examples of the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb, etc., but the present invention is not limited thereto.

[0166] The light emitted by the first wavelength shifter 332 has a full width at half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, or about 40 nm or less, or about 30 nm or less. Thus, the color purity and color reproducibility of the color displayed by the display device 10 can be further improved. Also, the light emitted by the first wavelength shifter 332 can be emitted in multiple directions regardless of the incident direction of the incident light. Thus, the lateral visibility of the second color displayed in the second light-transmitting region TA2 can be improved.

[0167] A part of the emitted light provided by the second light-emitting element can be emitted by passing through the second light-transmitting member WCL1 without being converted into red light by the first wavelength shifter 332. In the emitted light, a component that is incident on the second filtering pattern region 322a of the second color filter 322 and whose wavelength is not converted by the second light-transmitting member WCL1 can be blocked by the second filtering pattern region 322a. On the contrary, in the emitted light, the red light converted by the second light-transmitting member WCL1 passes through the second filtering pattern region 322a and is emitted toward the outside. That is, the second emitted light L2 emitted toward the outside of the display device 10 through the second light-transmitting region TA2 can be red light.

[0168] The third light-transmitting member WCL2 can be disposed in the space partitioned by the bank BK and overlap with the third light-emitting region ELA3 and the third light-transmitting region TA3 in the third direction DR3. The third light-transmitting member WCL2 can be in direct contact with the first cover layer CPL1 and the bank BK.

[0169] The third light-transmitting member WCL2 can be a wavelength conversion pattern that converts or shifts the peak wavelength of the incident light to light having another specific peak wavelength and emits it. Specifically, as described above, the emitted light provided by the third light-emitting element is transmitted through the third light-transmitting member WCL2 and the third filtering pattern region 323a of the third color filter 323 as blue light, and thus is converted into green light having a peak wavelength in the range of about 510 nm to about 550 nm and is emitted toward the outside of the display device 10. In other words, the third emitted light L3 that is transmitted through the third light-transmitting region TA3 in the third light-emitting region ELA3 and is emitted toward the outside can be green light.

[0170] The third light-transmitting member WCL2 can include a base resin 330, a light scatterer 331 dispersed in the base resin 330, and a second wavelength shifter 333 dispersed in the base resin 330.

[0171] The second wavelength shifter 333 can convert or shift the peak wavelength of the incident light to another specific peak wavelength. The second wavelength shifter 333 can convert the emitted light provided by the third light-emitting element as blue light into green light having a peak wavelength in the range of about 510 nm to about 550 nm and emit it. In some embodiments, the second wavelength shifter 333 can be a quantum dot, a quantum rod, or a phosphor, but is not limited thereto. When the second wavelength shifter 333 is a quantum dot, it has substantially the same configuration as the case where the first wavelength shifter 332 is a quantum dot as described above, and thus the description thereof is omitted.

[0172] A part of the emitted light provided by the third light-emitting element can be emitted by transmitting through the third light-transmitting member WCL2 without being converted into green light by the second wavelength shifter 333. In the emitted light, the component that is incident on the third filter pattern region 323a of the third color filter 323 without having its wavelength converted by the third light-transmitting member WCL2 can be blocked by the third filter pattern region 323a. On the contrary, in the emitted light, the green light converted by the third light-transmitting member WCL2 transmits through the third filter pattern region 323a and is emitted toward the outside. That is, the third emitted light L3 emitted toward the outside of the display device 10 through the third light-transmitting region TA3 can be green light.

[0173] The second cover layer CPL2 can be disposed on the bank BK, the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2, so as to prevent impurities such as moisture or air from penetrating from the outside and damaging or contaminating the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2. The second cover layer CPL2 can cover the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2.

[0174] The spacer layer SPC can be disposed on one surface of the second cover layer CPL2. The spacer layer SPC can maintain the cell gap between the substrate SUB and the counter substrate TSUB. The spacer layer SPC can surround the light-transmitting member in a plane. The spacer layer SPC can be disposed to overlap with the non-light-emitting region NELA and the light-blocking region BA. The spacer layer SPC can not overlap with the light-emitting regions ELA1, ELA2, ELA3, and the light-transmitting regions TA1, TA2, TA3.

[0175] In some embodiments, the spacer layer SPC can include a transparent organic substance having photocurability or an organic substance having photocurability and containing a light-blocking substance, but is not limited thereto. In some embodiments, the spacer layer SPC can be formed of acrylate resins, methacrylate resins, polyisoprene resins, vinyl resins, epoxy resins, urethane resins, cellulose resins, perylene resins, etc., but is not limited thereto.

[0176] In addition, the filling layer FIL can be disposed between the counter substrate TSUB and the substrate SUB. The filling layer FIL can be sandwiched between the wavelength conversion layer WCL and the thin film encapsulation layer TFEL to fill the space between the wavelength conversion layer WCL and the thin film encapsulation layer TFEL. Specifically, in some embodiments, the filling layer FIL can be in direct contact with the upper inorganic layer TFE3 of the thin film encapsulation layer TFEL and the second cover layer CPL2 of the wavelength conversion layer WCL, but is not limited thereto.

[0177] In some embodiments, the filling layer FIL may be formed of a material having an extinction coefficient substantially equal to 0. The refractive index and the extinction coefficient are related. When the refractive index decreases, the extinction coefficient also decreases. Further, when the refractive index is 1.7 or less, the extinction coefficient may substantially converge to 0. In some embodiments, the filling layer FIL may be formed of a material having a refractive index of 1.7 or less. Accordingly, it is possible to prevent or minimize the absorption of light transmitted through the filling layer FIL from the self-luminous element. In some embodiments, the filling layer FIL may be formed of an organic material having a refractive index of 1.4 to 1.6.

[0178] In the display device 10 described above, the first light-transmitting member TPL to the third light-transmitting member WCL2 may be formed by jetting a predetermined ink onto a substrate. The ink is supplied through an inlet of the print head unit and the remaining ink after being dispersed through the nozzles is circulated through an outlet. However, as the inkjet printing process continues, the collision dispersion of the ink sharply increases from a certain moment, and thus coating defects may occur.

[0179] Hereinafter, an inkjet printing device capable of improving the collision dispersion of an inkjet printing device will be described.

[0180] Figure 7 is a schematic perspective view of an inkjet printing device according to an embodiment. Figure 8 is a schematic bottom view of a print head unit according to an embodiment. Figure 9 is a schematic view showing the operation of a print head unit according to an embodiment. Figure 10 is a schematic view showing an ink circulation unit, a suction unit, and a print head unit according to an embodiment. Figure 11 is a schematic cross-sectional view of an inkjet head according to an embodiment. Figure 12 is an enlarged Figure 11 view of region A. Here, Figure 9 shows the shapes of the print head unit 100 and the stage STA according to an embodiment as viewed from the front.

[0181] Referring to Figures 7 to 11 , an inkjet printing device 1000 according to an embodiment may include a print head unit 100 including a plurality of inkjet heads 400. The inkjet printing device 1000 may further include a stage STA, an ink circulation unit 500, and a base frame 600.

[0182] The inkjet printing device 1000 may jet a predetermined ink 90 onto a substrate SUB using the print head unit 100. The ink 90 may be coated on the substrate SUB to form the first light-transmitting member TPL to the third light-transmitting member WCL2 of the wavelength conversion layer WCL.

[0183] The stage STA can provide an area for arranging the substrate SUB. The inkjet printing apparatus 1000 can include a first rail RL1 and a second rail RL2 extending in the second direction DR2, and the stage STA can be arranged on the first rail RL1 and the second rail RL2. The stage STA can move along the second direction DR2 on the first rail RL1 and the second rail RL2 by a separate moving member. However, it is not limited thereto. A structure in which the stage STA moves is shown in the drawings, but in some embodiments, the stage STA can be fixed and the print head unit 100 can be moved. In this case, the print head unit 100 can also be placed on a frame arranged on the first rail RL1 and the second rail RL2.

[0184] The print head unit 100 can include a plurality of inkjet heads 400 and be arranged on the base frame 600. The print head unit 100 can eject a predetermined ink 90 onto the substrate SUB by using the inkjet heads 400 connected to a separate ink storage unit.

[0185] The base frame 600 can include a support portion 610 and a moving unit 630. The support portion 610 can include a first support portion 611 extending in a first direction DR1 which is a horizontal direction and a second support portion 612 connected to the first support portion 611 and extending in a third direction DR3 which is a vertical direction. The extending direction of the first support portion 611 can be the same as the first direction DR1 which is the long side direction of the detection device. The print head unit 100 can be arranged on the moving unit 630 placed on the first support portion 611.

[0186] The moving unit 630 can include a moving portion 631 placed on the first support portion 611 and capable of moving in one direction and a fixing portion 632 arranged on the lower surface of the moving portion 631 and on which the print head unit 100 is arranged. The moving portion 631 can move along the first direction DR1 on the first support portion 611, and the print head unit 100 can be fixed to the fixing portion 632 and move along the first direction DR1 together with the moving portion 631.

[0187] The print head unit 100 is arranged on the base frame 600, and can eject the ink 90 provided from the ink reservoir onto the substrate SUB through the inkjet heads 400. The print head unit 100 can be separated from the stage STA passing through the lower part of the base frame 600 by a specific interval. The interval by which the print head unit 100 is separated from the stage STA can be adjusted by the height of the second support portion 612 of the base frame 600. The separation distance between the print head unit 100 and the stage STA can be adjusted within the following range: when the substrate SUB is arranged on the stage STA, such that there is a predetermined degree of interval between the print head unit 100 and the substrate SUB to ensure the space required for the printing process.

[0188] According to an embodiment, the print head unit 100 may include an inkjet head 400 including a plurality of nozzles 450. The inkjet head 400 may be disposed on the lower surface of the print head unit 100.

[0189] A plurality of inkjet heads 400 are arranged to be spaced apart from each other in one direction, and may be arranged in one column or multiple columns. In the figure, a case where the inkjet heads 400 are arranged in two columns and the inkjet heads 400 in each column are arranged staggeredly with respect to each other is shown. However, it is not limited thereto, and the inkjet heads 400 may be arranged in more columns, and may also be arranged to overlap without being staggered with respect to each other. The shape of the inkjet head 400 is not particularly limited. As an example, the inkjet head 400 may have a rectangular shape.

[0190] The inkjet heads 400 may be arranged such that at least one (for example, two) inkjet heads 400 form a pack and are adjacent to each other. However, the number of inkjet heads 400 included in one pack is not limited thereto. As an example, the number of inkjet heads 400 included in one pack may be from 1 to 5. In addition, although only a case where six inkjet heads 400 are arranged in the print head unit 100 is shown in the figure, this is for schematically showing the print head unit 100, and the number of inkjet heads 400 is not limited thereto.

[0191] The inkjet heads 400 arranged in the print head unit 100 may eject ink 90 onto a substrate SUB disposed above the stage STA. According to an embodiment, the print head unit 100 may move in one direction on the first support portion 611, and the inkjet head 400 may move in the one direction and eject ink 90 onto the upper portion of a target substrate SUB.

[0192] The print head unit 100 may move in a first direction DR1 along which the first support portion 611 extends, and the inkjet head 400 may move in the first direction DR1 and eject ink 90 onto the upper portion of a target substrate SUB.

[0193] In some embodiments, the width of the substrate SUB measured in the first direction DR1 may be greater than the width of the print head unit 100 measured in the first direction DR1. In this case, the print head unit 100 may move in the first direction DR1 and eject ink 90 completely onto the substrate SUB. However, it is not limited thereto. The print head unit 100 may first be located outside the first rail RL1 and the second rail RL2, and then move in the first direction DR1 and eject ink 90 onto the upper portion of the substrate SUB. If the stage STA moves in the second direction DR2 and is located below the base frame 600, the print head unit 100 may move between the first rail RL1 and the second rail RL2 and eject ink 90 through the inkjet head 400. Such an operation of the inkjet head 400 is not limited thereto, and various modifications can be made within the range where a similar process can be achieved.

[0194] The inkjet printing apparatus 1000 may further include an ink circulation unit 500. The ink circulation unit 500 may supply ink 90 to the print head unit 100, and the inkjet head 400 may discharge the received ink 90. The ink 90 circulates between the ink circulation unit 500 and the inkjet head 400. A part of the ink 90 supplied to the inkjet head 400 may be discharged from the inkjet head 400, and the remaining part may be supplied to the ink circulation unit 500 again.

[0195] The ink circulation unit 500 may be connected to the inkjet head 400 through a first connection pipe IL1 and a second connection pipe IL2. For example, the ink circulation unit 500 may supply the ink 90 to the inkjet head 400 through the first connection pipe IL1, and the flow rate of the supplied ink 90 may be adjusted by a first valve VA1. In addition, the ink circulation unit 500 may supply the remaining part of the ink 90 discharged from the inkjet head 400 through the second connection pipe IL2. The flow rate of the ink 90 supplied to the ink circulation unit 500 through the second connection pipe IL2 may be adjusted by a second valve VA2. As the ink 90 circulates through the ink circulation unit 500, the deviation in the number of particles such as quantum dots of a light-transmitting member contained in the ink 90 discharged from the inkjet head 400 may be minimized.

[0196] The ink circulation unit 500 may be placed on the base frame 600, but is not limited thereto. The ink circulation unit 500 is provided in the inkjet printing apparatus 1000, and its position or form is not particularly limited. For example, the ink circulation unit 500 may be arranged by a separate device, and various arrangements can be made within this range if it is connected to the inkjet head 400.

[0197] In some embodiments, the ink circulation unit 500 may include a first circulating ink storage unit 510, a second circulating ink storage unit 520, a third circulating ink storage unit 530, a circulation pump 550, a compressor 560, and a flow meter 580. The second circulating ink storage unit 520, the circulation pump 550, and the third circulating ink storage unit 530 of the ink circulation unit 500 are connected to the inkjet head 400, and they may form an ink circulation system.

[0198] The first circulating ink storage unit 510 may be a storage unit for preparing the ink 90 to be manufactured. The ink 90 including the solvent 91, the wavelength shifter 95, and the scatterer 97 is prepared in the first circulating ink storage unit 510 of the ink circulation unit 500, and the ink 90 may be supplied to the ink circulation system.

[0199] The second cycle ink storage unit 520 is connected to the first cycle ink storage unit 510 and supplies the prepared ink 90. In addition, the second cycle ink storage unit 520 supplies the remaining ink 90 discharged from the inkjet head 400 through the second connection pipe IL2. The second cycle ink storage unit 520 is located between the third cycle ink storage unit 530, the inkjet head 400, and the first cycle ink storage unit 510 to form an ink circulation system. In the case where the second cycle ink storage unit 520 is omitted, supplying an excessive amount of ink 90 to the third cycle ink storage unit 530 may cause the solids in the ink to disperse unevenly. The ink circulation unit 500 further includes the second cycle ink storage unit 520, which can prevent an excessive amount of ink 90 from being supplied to the third cycle ink storage unit 530. As an example, the second cycle ink storage unit 520 can function as a buffer storage unit that stores a part of the circulated ink 90 in the ink circulation system.

[0200] The ink 90 supplied to the second cycle ink storage unit 520 can be supplied to the third cycle ink storage unit 530 by the circulation pump 550. The circulation pump 550 can be a pump that transfers power to the fluid to enable the ink 90 in the ink circulation system to circulate. The ink 90 supplied to the second cycle ink storage unit 520 can be supplied to the third cycle ink storage unit 530 by the circulation pump 550. A flow meter 580 can be provided between the circulation pump 550 and the third cycle ink storage unit 530, and the flow meter 580 can measure the flow rate of the ink 90 supplied to the third cycle ink storage unit 530. The circulation pump 550 can adjust the flow rate of the ink 90 supplied to the third cycle ink storage unit 530 according to the flow rate of the ink 90 measured by the flow meter 580.

[0201] In addition, the ink circulation unit 500 is further equipped with a compressor 560, and the compressor 560 can adjust the pressure inside the third cycle ink storage unit 530. The compressor 560 can remove the gas to make the inside of the third cycle ink storage unit 530 in a vacuum state, or flow in inert gas from the outside in a manner with a predetermined pressure. However, it is not limited thereto, and the compressor 560 of the ink circulation unit 500 can also be omitted.

[0202] The third circulation ink storage unit 530 is connected to the second circulation ink storage unit 520 through a circulation pump 550 to supply ink 90. In addition, the third circulation ink storage unit 530 can supply the ink 90 to the inkjet head 400 through the first connection pipe IL1. In one embodiment, the third circulation ink storage unit 530 may include a stirrer ST, and the stirrer ST may disperse the wavelength shifter 95 and the scatterer 97 in the ink 90. The ink 90 supplied to the third circulation ink storage unit 530 remains in a dispersed state as the stirrer ST rotates, and the wavelength shifter 95 and the scatterer 97 therein do not precipitate. That is, the stirrer ST of the third circulation ink storage unit 530 can prevent the wavelength shifter 95 and the scatterer 97 from precipitating at the lower part of the third circulation ink storage unit 530, resulting in a decrease in the amount of the wavelength shifter 95 and the scatterer 97 in the ink 90 discharged through the inkjet head 400. The third circulation ink storage unit 530 can supply the ink 90 in which the wavelength shifter 95 and the scatterer 97 are smoothly dispersed to the inkjet head 400, and the inkjet head 400 can discharge the ink 90 including the wavelength shifter 95 and the scatterer 97 above a predetermined level.

[0203] In one embodiment, the ink 90 may include a solvent 91, a base resin 93 contained in the solvent 91, a wavelength shifter 95, and a scatterer 97. In an exemplary embodiment, the ink 90 may be provided in a solution or colloid state. For example, the solvent 91 may be acetone, water, alcohol, toluene, propylene glycol (PG), propylene glycol methyl acetate (PGMA), triethylene glycol monobutyl ether (TGBE), diethylene glycol monophenyl ether (DGPE), an amide solvent, a dicarbonyl solvent, diethylene glycol dibenzoate, a tricarbonyl solvent, triethyl citrate, a phthalate solvent, benzyl butyl phthalate, bis(2-ethylhexyl) phthalate, bis(2-ethylhexyl) isophthalate, ethyl phthalyl ethyl glycolate, etc., but is not limited thereto. The base resin 93, the wavelength shifter 95, and the scatterer 97 may be contained in the solvent 91 in a dispersed state and may be supplied to the print head unit 100 and discharged from the print head unit 100.

[0204] Referring to Figure 11 , the inkjet head 400 may include a plurality of nozzles 450 and discharge the ink 90 through the nozzles 450. The ink 90 discharged from the nozzles 450 may be ejected onto a substrate SUB disposed on the stage STA. The nozzles 450 may be located on the bottom surface of the inkjet head 400 and may be arranged along a direction in which the inkjet head 400 extends.

[0205] The inkjet head 400 may include a base portion 410, an internal tube 430, a piezo chamber 460, a plurality of nozzles 450, a discharge portion 470, and an actuator 490.

[0206] The base portion 410 may form the main body of the inkjet head 400. The base portion 410 may be attached to the print head unit 100. As described above, the base portion 410 may have a shape extending along the first direction DR1 and the third direction DR3. However, it is not limited thereto, and the base portion 410 may also have a circular or polygonal shape.

[0207] The discharge portion 470 may be a portion of the base portion 410 of the inkjet head 400 in which the piezoelectric chambers 460 and the nozzles 450 are arranged. In the drawings, a discharge portion 470 connected to the base portion 410 and a discharge portion 470 spaced apart therefrom are shown, and a case where the piezoelectric chambers 460 and the nozzles 450 are formed between the discharge portions 470 is shown. However, the discharge portions 470 may substantially be an integrated single component not spaced apart from each other, and the nozzles 450 may be formed in the shape of holes penetrating the discharge portion 470. That is, a plurality of discharge portions 470 may be arranged without being spaced apart from each other to form a single component. However, not limited thereto, in some embodiments, units including the discharge portion 470 in which the nozzles 450 are formed in the inkjet head 400 may also be arranged in plurality. In this case, the plurality of discharge portions 470 may also be arranged to be spaced apart from each other and connected to the base portion 410.

[0208] The internal tube 430 is arranged in the base portion 410, connected to the internal flow path of the print head unit 100, and may supply ink 90 from the ink circulation unit 500. The print head unit 100 supplies ink 90 through the first connection tube IL1 connected to the ink circulation unit 500, and the remaining ink 90 discharged from the nozzles 450 may be supplied to the ink circulation unit 500 through the second connection tube IL2. The internal tube 430 of the inkjet head 400 may supply ink 90 from an inlet 431 connected to the internal flow path of the print head unit 100, and the remaining ink 90 after discharge may be discharged from the internal flow path through an outlet 433. The inlet 431 may be connected to the first connection tube IL1, and the outlet 433 may be connected to the second connection tube IL2. The inlet 431 may be arranged at one end of the internal tube 430, and the outlet 433 may be arranged at the other end of the internal tube 430, that is, in the internal tube 430, it may be arranged on the opposite side of the inlet 431.

[0209] In addition, the inkjet head 400 may include a filter F arranged in the internal tube 430. When the ink 90 flowing along the internal tube 430 flows into the nozzles 450, other substances except for the wavelength shifter 95 or the scatterer 97 can be prevented from flowing into the nozzles 450. Accordingly, it is possible to prevent the nozzles 450 from being clogged with foreign substances, or the ink 90 discharged from the nozzles 450 from being mixed with foreign substances.

[0210] A plurality of nozzles 450 may be arranged at a discharge portion 470 located on one surface (e.g., the lower surface) of the base portion 410. The plurality of nozzles 450 may be spaced apart from each other and arranged along the extension direction of the base portion 410, and may be connected to the internal tube 430 through the piezoelectric chamber 460 of the discharge portion 470 of the base portion 410 to discharge the ink 90. Although not shown in the figure, the plurality of nozzles 450 may be arranged in one or more columns. In addition, although the figure shows a situation in which four nozzles 450 are formed in the inkjet head 400, it is not limited thereto. In some embodiments, the number of nozzles 450 included in the inkjet head 400 may be 128 to 1800. The nozzle 450 may discharge the ink 90 flowing into the piezoelectric chamber 460 along the internal tube 430. The ejection amount of the ink 90 through the nozzle 450 may be adjusted according to the voltage applied to each nozzle 450. In one embodiment, the amount of the ink 90 discharged once from each nozzle 450 may be 1 pl to 50 pl (Pico-liter), but is not limited thereto.

[0211] The ink 90 ejected through the nozzle 450 may include a solvent 91, a base resin 93, a wavelength shifter 95, and a scatterer 97. According to an embodiment, the wavelength shifter 95 and the scatterer 97 may be randomly dispersed in the ink 90, flow along the inner tube 430, and be supplied to the nozzle 450.

[0212] The piezoelectric chamber 460 may be disposed between the nozzle 450 and the inner tube 430, and may be a location that temporarily stores the ink 90 before the ink 90 is discharged to the nozzle 450. If the piezoelectric chamber 460 is applied with hydraulic pressure of the actuator 490, the ink 90 may be discharged through the nozzle 450. The piezoelectric chamber 460 may be connected to a lower portion of the inner tube 430, and may be disposed corresponding to the plurality of nozzles 450, respectively.

[0213] The actuator 490 may be arranged at the discharge portion 470 of the base portion 410. The actuator 490 may be arranged to surround the piezoelectric chamber 460. The actuator 490 may apply hydraulic pressure to the ink 90 flowing into the piezoelectric chamber 460 so that the ink 90 may be smoothly discharged through the nozzle 450. The actuator 490 may have substantially the same length as the discharge portion 470, but is not limited thereto. The actuator 490 may be arranged to correspond to and surround the piezoelectric chamber 460, and may also be arranged to be spaced apart from other actuators 490 by a distance equivalent to the distance spaced apart from the piezoelectric chamber 460.

[0214] The actuator 490 can control the amount of ink 90 discharged through the nozzle 450 in the piezoelectric chamber 460. The actuator 490 can adjust the hydraulic pressure applied to the ink 90 and is capable of adjusting the droplet amount (Droplets) of the ink 90 discharged into a unit space in the printing process of the inkjet printing device 1000. For example, the amount of ink 90 discharged once from the nozzle 450 can be 1 pl to 50 pl (picoliters), and the discharge amount of the ink 90 required for a unit space in one printing process can be more than 50 pl. In this case, the actuator 490 can differently control the droplet amount of the ink 90 discharged from the nozzle 450 in one printing process by adjusting the strength or frequency of the hydraulic pressure, etc.

[0215] Combined Figure 11 and referring to Figure 12 , the nozzle 450 can include an inner surface ISS for discharging the ink 90. The inner surface ISS can define a channel through which the ink 90 moves in order to be discharged from the nozzle 450. The inner surface ISS can be an inclined surface extending along the inner tube 430 and having a predetermined inclination at least in part. The inner surface ISS can be presented in a shape that inclines such that the width of the nozzle 450 becomes smaller towards the lower part and then extends in the vertical direction.

[0216] The inner surface ISS can include an inclined surface INS and a discharge surface DIS. The inclined surface INS is the surface of the inner surface ISS of the nozzle 450 that extends from the inner tube 430 and can be an inclined surface having a predetermined inclination. The discharge surface DIS can be the surface connecting the inclined surface INS and the lower surface of the discharge part 470. For example, the discharge surface DIS can be configured to extend in the third direction DR3 and be perpendicular to the lower surface of the discharge part 470.

[0217] A first liquid-repellent layer HPL1 can be arranged at the lower part of the nozzle 450. The first liquid-repellent layer HPL1 can function to prevent the ink 90 discharged through the nozzle 450 from spreading to the lower surface of the discharge part 470.

[0218] The first liquid-repellent layer HPL1 can be a coating layer including a liquid-repellent substance. The coating layer including the liquid-repellent substance, for example, can include any one or more of polyimide, perfluoroalkoxy (PFA), fluorinated ethylene propylene (FEP), ethylene tetrafluoroethylene (ETFE), and polytetrafluoroethylene (PTFE). In addition, the coating layer containing the liquid-repellent substance can include an alkyl (-C n H2n+1 ), a fluorocarbon group (-C x F y ), and any one or more of fluorine groups.

[0219] The first liquid-repellent layer HPL1 can be configured to have a thickness of 1 nm to 100 nm. The first liquid-repellent layer HPL1 can be formed by methods such as dipping, jetting, evaporation, etc., but is not limited thereto.

[0220] In one embodiment, the nozzle 450 may include a coating layer COT disposed on the inner surface ISS. The coating layer COT may be disposed to directly contact the discharge surface DIS of the inner surface ISS of the nozzle 450. The coating layer COT is spaced apart from the inclined surface INS of the nozzle 450 and is not disposed on the inclined surface INS. In addition, the coating layer COT may be disposed on the side surface of the first liquid-repellent layer HPL1 and may extend from the side surface of the first liquid-repellent layer HPL1 to the inner surface ISS of the nozzle 450. That is, the coating layer COT may be disposed on the discharge surface DIS of the nozzle 450 and the side surface of the first liquid-repellent layer HPL1.

[0221] The coating layer COT may include a first coating layer CTL1 and a second coating layer CTL2. The first coating layer CTL1 may be disposed on the discharge surface DIS of the nozzle 450 and may be disposed to directly contact the discharge surface DIS. The second coating layer CTL2 may be disposed on the first coating layer CTL1 and may be disposed to directly contact the first coating layer CTL1. The second coating layer CTL2 may be spaced apart from the discharge surface DIS of the nozzle 450 and not in contact with the discharge surface DIS.

[0222] The first coating layer CTL1 may include at least one of elements of Group 2 to Group 6. For example, the first coating layer CTL1 may include Cd, Se, Te, Zn, S, Mg, In, Ga, Sb, Al, and Pb, etc. In an exemplary embodiment, the first coating layer CTL1 may include any one or more of Zn, Se, In, and S.

[0223] The thickness TT1 of the first coating layer CTL1 may be 10 nm to 100 nm. Among them, the thickness may be the distance measured along the first direction DR1 from the discharge surface DIS of the nozzle 450. In an exemplary embodiment, the thickness TT1 of the first coating layer CTL1 may be 10 nm to 50 nm, but is not limited thereto.

[0224] The second coating layer CTL2 may include AlOF. The thickness TT2 of the second coating layer CTL2 may be from 40 nm to 900 nm. In an exemplary embodiment, the thickness TT2 of the second coating layer CTL2 may be from 100 nm to 500 nm, but is not limited thereto.

[0225] The total thickness of the coating layer COT including the first coating layer CTL1 and the second coating layer CTL2 may be from 50 nm to 1000 nm, but is not limited thereto. The coating layer COT may be adjusted within a range that does not increase the collision dispersion of the ink 90 discharged through the nozzle 450. If the total thickness of the coating layer COT exceeds 1000 nm, the collision dispersion of the ink 90 increases sharply, which may result in poor coating. Here, the collision dispersion may represent the distance between the ink at the central part discharged onto the substrate SUB and the outermost ink. That is, in the present embodiment, by managing the overall thickness of the coating layer COT, an increase in the collision dispersion of the ink 90 can be improved.

[0226] As described above, the inkjet printing apparatus 1000 according to the present invention forms a coating layer COT including a first coating layer CTL1 and a second coating layer CTL2, and the collision dispersion of the ink can be improved by adjusting the thickness of the coating layer COT.

[0227] Figure 13 It is a cross-sectional view showing a nozzle of an inkjet printing apparatus according to another embodiment.

[0228] Referring to Figure 13 this embodiment differs from the above Figure 12 embodiment in that the coating layer COT further includes a third coating layer CTL3. Hereinafter, a repeated description of the same components as in the above embodiment will be omitted, and the differences will be described.

[0229] The coating layer COT may include a first coating layer CTL1, a second coating layer CTL2, and a third coating layer CTL3.

[0230] The third coating layer CTL3 may be disposed on the second coating layer CTL2 and disposed in direct contact with the second coating layer CTL2. The third coating layer CTL3 may be spaced apart from the discharge surface DIS of the nozzle 450 and not in contact with the discharge surface DIS, or may be spaced apart from the first coating layer CTL1 and not in contact with the first coating layer CTL1.

[0231] The third coating layer CTL3 may include a metal oxide. For example, the metal oxide of the third coating layer CTL3 may include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), etc. In an exemplary embodiment, the third coating layer CTL3 may include titanium oxide.

[0232] The third coating layer CTL3 can be formed by stacking multiple metal oxide particles. For example, the third coating layer CTL3 can include titanium oxide particles. In this case, the titanium oxide particles can be configured as spherical (amorphous) or rod-shaped, and the rod-shaped can be configured as anatase type or rutile type. The size of the titanium oxide particles can be configured to be 100 nm to 500 nm, but is not limited thereto.

[0233] In another exemplary embodiment, the metal oxide particles can include aluminum (Al). For example, the titanium oxide particles can be coated with an aluminum layer.

[0234] The thickness TT3 of the third coating layer CTL3 can be the same as the size of the metal oxide particles. For example, it can be configured to be 100 nm to 500 nm, but is not limited thereto.

[0235] When the coating layer COT includes the first coating layer CTL1, the second coating layer CTL2, and the third coating layer CTL3, the total thickness of the coating layer COT can be 10 nm to 1000 nm.

[0236] The inkjet printing device 1000 according to the present invention forms a coating layer COT including the first coating layer CTL1, the second coating layer CTL2, and the third coating layer CTL3, and can improve the collision dispersion of the ink by adjusting the thickness of the coating layer COT.

[0237] Figure 14 It is a cross-sectional view showing the nozzle of an inkjet printing device according to another embodiment.

[0238] Refer to Figure 14 , in this embodiment, the coating layer COT is a single-layer coating layer CTL formed by mixing the above-mentioned first coating layer CTL1 to third coating layer CTL3, which is different from the above-mentioned Figure 12 and Figure 13 embodiments.

[0239] The coating layer COT can include the substances of the above-mentioned first coating layer CTL1, second coating layer CTL2, and third coating layer CTL3.

[0240] In one embodiment, the coating layer COT can include at least one of Group II elements to Group VI elements and AlOF. At least one of the Group II elements to Group VI elements and AlOF can exist in the coating layer COT in a randomly mixed form.

[0241] In another exemplary embodiment, the coating layer COT may include at least one element selected from Group 2 to Group 6 elements, AlOF, and a metal oxide. At least one element selected from Group 2 to Group 6 elements, AlOF, and the metal oxide may exist in a randomly mixed form within the coating layer COT.

[0242] The coating layer COT may be configured as a single layer. When the coating layer COT is a single layer, the thickness of the coating layer COT may be 50 nm to 1000 nm. In an exemplary embodiment, the thickness of the coating layer COT may be 100 nm to 500 nm, but is not limited thereto.

[0243] As described above, the inkjet printing apparatus 1000 according to the present invention forms a single-layer coating layer COT, and the collision dispersion of the ink can be improved by adjusting the thickness of the coating layer COT.

[0244] Figure 15 It is a cross-sectional view showing a nozzle of an inkjet printing apparatus according to still another embodiment.

[0245] Referring to Figure 15 , this embodiment differs from the above-described Figures 12 to 14 embodiment in that the coating layer COT is a liquid-repellent coating layer.

[0246] The coating layer COT may be disposed on the discharge surface DIS in the inner surface ISS of the nozzle 450. For example, the coating layer COT may be disposed apart from the inclined surface INS of the nozzle 450 and directly disposed on the discharge surface DIS. The coating layer COT may also be disposed on the side surface of the first liquid-repellent layer HPL1. The coating layer COT may extend from the side surface of the first liquid-repellent layer HPL1 to the inner surface ISS of the nozzle 450. For example, the coating layer COT may be disposed on the discharge surface DIS and the side surface of the first liquid-repellent layer HPL1. The coating layer COT may be disposed on the side surface of the first liquid-repellent layer HPL1 and may be disposed on at least a part of the discharge surface DIS.

[0247] The coating layer COT may have a length of at least 2 μm in the thickness direction (e.g., the third direction DR3) of the nozzle 450, and may be less than the length of the inner surface ISS of the nozzle 450 in the third direction DR3. For example, the length of the coating layer COT may be less than the length of the discharge surface DIS. In this case, the ink may form a meniscus that is recessed in the third direction DR3 from above the coating layer COT within the nozzle 450. If the ink forms a meniscus within the nozzle 450, the solids in the ink can be prevented from being fixed. Therefore, it is possible to prevent the solids from acting as foreign substances in the nozzle 450 and increasing the collision dispersion of the ink, thereby improving coating defects.

[0248] The coating layer COT may be a coating layer including a liquid-repellent substance. The coating layer including the liquid-repellent substance may include, for example, one or more of polyimide, perfluoroalkoxy (PFA), fluorinated ethylene propylene (FEP), ethylene-tetrafluoroethylene copolymer (ETFE), and polytetrafluoroethylene (PTFE).

[0249] The coating layer COT may be configured to have a thickness of 1 nm to 100 nm. The coating layer COT may be formed by methods such as dipping, jetting, evaporation, etc., but is not limited thereto.

[0250] As described above, the inkjet printing apparatus 1000 according to the present invention forms the coating layer COT including the liquid-repellent substance, thereby being able to improve the collision dispersion of the ink and improve coating defects.

[0251] As mentioned above, embodiments of the present invention have been described with reference to the drawings. However, those of ordinary skill in the art to which the present invention pertains can understand that the present invention can be implemented in other specific forms without changing the technical concept or essential features of the present invention. Therefore, it should be understood that the above embodiments are exemplary in all respects and not restrictive.

Claims

1. An inkjet printing device, comprising: A base portion; An internal tube disposed within the base portion, and ink moves within the internal tube; And A nozzle extending from the internal tube, and the ink is discharged from the nozzle, Wherein the nozzle includes a coating layer disposed on the inner surface and including at least AlOF.

2. The inkjet printing device according to claim 1, wherein, The nozzle includes: An inclined surface extending from the internal tube; and A discharge surface extending from the inclined surface toward the lower side of the nozzle, Wherein the coating layer is disposed on the discharge surface.

3. The inkjet printing device according to claim 2, wherein, The coating layer is spaced apart from the inclined surface and is in direct contact with the discharge surface.

4. The inkjet printing device according to claim 1, wherein, The coating layer includes: A first coating layer disposed on the inner surface of the nozzle; and A second coating layer disposed on the first coating layer.

5. The inkjet printing device according to claim 4, wherein, The first coating layer includes at least one or more of elements from Group II to Group VI.

6. The inkjet printing device according to claim 5, wherein, The first coating layer includes any one or more selected from Cd, Se, Te, Zn, S, Mg, In, Ga, Sb, Al, and Pb.

7. The inkjet printing device according to claim 4, wherein, The thickness of the first coating layer is 10 nm to 100 nm.

8. The inkjet printing device according to claim 4, wherein, The second coating layer is directly disposed on the first coating layer and includes the AlOF.

9. The inkjet printing device according to claim 4, wherein, The thickness of the second coating layer is 40 nm to 900 nm.

10. The inkjet printing device according to claim 4, further comprising: A third coating layer disposed on the second coating layer, The third coating layer includes a metal oxide.

11. The inkjet printing device according to claim 10, wherein, The thickness of the third coating layer is 100 nm to 500 nm.

12. The inkjet printing device according to claim 1, wherein, The thickness of the coating layer is 50 nm to 1000 nm.

13. The inkjet printing device according to claim 1, wherein, The coating layer is configured as a single layer.

14. The inkjet printing device according to claim 13, wherein, The coating layer includes at least one or more of elements from Group II to Group VI, AlOF, and a metal oxide.

15. An inkjet printing device, comprising: A base portion; An internal tube disposed within the base portion, and ink moves within the internal tube; And A nozzle extending from the internal tube, and the ink is discharged from the nozzle, Wherein the nozzle includes a coating layer disposed on the inner surface and including a liquid-repellent substance.

16. The inkjet printing device according to claim 15, wherein, The nozzle includes: An inclined surface extending from the internal tube; and A discharge surface extending from the inclined surface toward the lower side of the nozzle, Wherein the coating layer is disposed on the discharge surface.

17. The inkjet printing apparatus according to claim 16, wherein the coating layer is disposed spaced apart from the inclined surface.

18. The inkjet printing apparatus according to claim 15, wherein the thickness of the coating layer is 1 nm to 100 nm.

19. The inkjet printing apparatus according to claim 15, wherein in the thickness direction of the nozzle, the length of the coating layer is 2 μm or more and less than the length of the inner surface of the nozzle.

20. The inkjet printing apparatus according to claim 15, further comprising: a discharge portion in which the nozzle is disposed; a first liquid repellent layer disposed on the lower surface of the discharge portion, wherein the coating layer extends from a side surface of the first liquid repellent layer toward an inner edge of the nozzle.

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