System and method for analyzing and testing electrification effect in solar cell array

Abstract

The invention relates to the technical field of spaceflight, in particular to a system and method for analyzing and testing the electrification effect in a solar cell array, and the system comprises a vacuum chamber, a high-energy electron gun, the solar cell array, a current probe, a simulation power supply, a beam integrator and an oscilloscope, the high-energy electron gun is fixed on the inner wall of the vacuum chamber, and generated electron beams are irradiated on the solar cell array; the current probe is arranged in the vacuum chamber and is connected with the solar cell array; the oscilloscope is arranged outside the vacuum chamber and is connected with the current probe; the analog power supply is arranged outside the vacuum chamber and is connected with the solar cell array; and the beam integrator is arranged outside the vacuum chamber and is connected with the solar cell array. According to the application, severe high-energy electron space environments of different tracks can be simulated, the internal charge-discharge effect possibly caused by the solar cell array is researched through tests, and the influence of the internal charge-discharge effect on the solar cell array is checked.

Description

Technical Field

[0001] The present application relates to the field of aerospace technology, and more particularly, to a system and method for analyzing and testing the charging effect inside a solar array. Background Art

[0002] The charging and discharging effect of a satellite, also known as the satellite charging effect, refers to the process of electrostatic charge accumulation and discharge that occurs when a satellite interacts with the space plasma, high-energy electrons, solar radiation, and other environments.

[0003] The satellite charging and discharging effect is divided into surface charging effect and internal charging effect. The internal charging effect refers to the phenomenon that high-energy electrons in space (with energies in the range of 0.1 - 10 MeV) penetrate the satellite shielding layer and deposit and discharge on the surface of the internal materials of the satellite or inside the dielectric materials (at a millimeter-level depth); when the electric field strength exceeds the breakdown threshold of the material, the resulting discharge will seriously damage the satellite components. Since the internal charging effect usually occurs inside the satellite and causes relatively serious damage to the satellite, it is an urgent problem to explore the analysis means of the damage caused by the internal charging effect to the solar array. Summary of the Invention

[0004] The present application provides a system and method for analyzing and testing the internal charging effect of a solar array, which can visually analyze the internal charging effect of the solar array and ensure the long-term normal operation of the satellite in orbit.

[0005] To achieve the above object, the present application provides a system for analyzing and testing the internal charging effect of a solar array, including a vacuum chamber, a high-energy electron gun, a solar array, a current probe, a simulation power supply, a beam current integrator, and an oscilloscope, wherein: the solar array is arranged inside the vacuum chamber; the high-energy electron gun is fixed on the inner wall of the vacuum chamber, and the generated electron beam irradiates the solar array; the current probe is arranged inside the vacuum chamber and is connected to the solar array; the oscilloscope is arranged outside the vacuum chamber and is connected to the current probe for monitoring the discharge signal; the simulation power supply is arranged outside the vacuum chamber and is connected to the solar array for providing the working voltage; the beam current integrator is arranged outside the vacuum chamber and is connected to the solar array for monitoring the beam current density of the high-energy electron gun irradiating the surface of the solar array.

[0006] Further, the solar array is composed of a loop load resistor and a plurality of solar cells connected in parallel.

[0007] Further, it further includes a compensation capacitor, and the compensation capacitor is connected to the simulation power supply and the solar array.

[0008] Further, the energy range of the high-energy electron gun is 0.1 - 2.0 MV, and its beam current range is 0.001 - 100 nA / cm 2 @0.1 - 2.0 MV.

[0009] Further, the vacuum degree inside the vacuum chamber < 10 -5 Pa.

[0010] In addition, the present application also provides a method for applying the in-orbit charging effect analysis and test system of a solar array, including the following steps:

[0011] Step 1: Evacuate the inside of the vacuum chamber to make the vacuum degree reach 8.0×10 -5 Pa;

[0012] Step 2: Adjust the parameters of the high-energy electron gun to generate an electron beam with the required energy and beam current density to irradiate the solar array sample;

[0013] Step 3: Set the simulation power supply in the constant voltage state, and set the limit current according to the working current of the solar array;

[0014] Step 4: Start setting the inter-string working voltage of the solar array from a certain voltage, and use a current probe to monitor electrostatic discharge and secondary discharge;

[0015] Step 5: Adjust the voltage of the inter-string working voltage of the solar array once every 2 hours, repeat Step 4, and record the test results;

[0016] Step 6: If the test piece discharges and breaks down during the test, stop the test;

[0017] Step 7: Adjust the parameters of the high-energy electron gun to change the beam current density, and repeat Steps 3-6 again;

[0018] Step 8: Turn off the simulation power supply and the high-energy electron gun;

[0019] Step 9: Vent the vacuum chamber, open the vacuum chamber, and take out the solar array sample.

[0020] The in-orbit charging effect analysis and test system and method of a solar array provided by the present application have the following beneficial effects:

[0021] The present application can simulate the harsh high-energy electron space environment of different orbits, study the possible internal charging and discharging effects caused by the solar array through experiments, test the influence of the internal charging and discharging effects on the solar array, and provide a reference for the internal charging and discharging protection of the solar array. Description of the Drawings

[0022] The drawings constituting a part of the present application are used to provide a further understanding of the present application, making other features, objectives, and advantages of the present application more obvious. The schematic embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation of the present application. In the drawings:

[0023] Figure 1It is a schematic diagram of the in-orbit charging effect analysis and test system for a solar array provided according to an embodiment of the present application;

[0024] Figure 2 It is a schematic structural diagram of a solar array provided according to an embodiment of the present application;

[0025] Figure 3 It is a waveform diagram of the test discharge of a high-energy electron gun at 0.13 MeV provided according to an embodiment of the present application;

[0026] Figure 4 It is a waveform diagram of the test discharge of a high-energy electron gun at 0.23 MeV provided according to an embodiment of the present application;

[0027] In the figure: 1 - vacuum chamber, 2 - high-energy electron gun, 3 - solar array, 4 - current probe, 5 - simulation power supply, 6 - beam current integrator, 7 - oscilloscope, 8 - loop load resistor, 9 - solar cell, 10 - compensation capacitor. Detailed implementation manners

[0028] In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0029] It should be noted that the terms "first", "second", etc. in the description and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so as to describe the embodiments of the present application here. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device including a series of steps or units does not necessarily need to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0030] In the present application, the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", etc. is based on the orientation or positional relationship shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit that the indicated devices, elements or components must have a specific orientation or be constructed and operated in a specific orientation.

[0031] Moreover, in addition to being used to represent orientation or positional relationships, some of the above terms may also be used to represent other meanings. For example, the term "upper" may also be used to represent a certain attachment relationship or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in this application can be understood according to the specific circumstances.

[0032] In addition, the meaning of the term "plurality" shall be two or more.

[0033] It should be noted that, without conflict, the embodiments in this application and the features in the embodiments can be combined with each other. The following will detail this application with reference to the drawings and in conjunction with the embodiments.

[0034] As Figure 1 shown, this application provides an in-orbit charging effect analysis and test system for a solar array, including a vacuum chamber 1, a high-energy electron gun 2, a solar array 3, a current probe 4, a simulation power supply 5, a beam current integrator 6, and an oscilloscope 7, where: the solar array 3 is arranged inside the vacuum chamber 1; the high-energy electron gun 2 is fixed on the inner wall of the vacuum chamber 1, and the generated electron beam irradiates the solar array 3; the current probe 4 is arranged inside the vacuum chamber 1 and is connected to the solar array 3; the oscilloscope 7 is arranged outside the vacuum chamber 1 and is connected to the current probe 4 for monitoring the discharge signal; the simulation power supply 5 is arranged outside the vacuum chamber 1 and is connected to the solar array 3 for providing a working voltage; the beam current integrator 6 is arranged outside the vacuum chamber 1 and is connected to the solar array 3 for monitoring the beam current density of the high-energy electron gun 2 irradiating the surface of the solar array 3.

[0035] Specifically, the in-orbit charging effect analysis and test system for a solar array provided in the embodiments of this application, under electron irradiation conditions, uses the simulation power supply 5 to provide a working voltage for the solar array 3 sample, sets the simulation power supply 5 in a constant voltage state, and verifies the voltage threshold for the solar array 3 to trigger secondary discharge by gradually increasing the working voltage of the solar cell 9. At the same time, the high-energy electron gun 2 is used to generate an electron beam to irradiate the solar array 3 sample, and analyze and test whether the solar array 3 has electrostatic discharge and whether it will cause secondary discharge of a short circuit in the circuit. Among them, the vacuum chamber 1 is used to simulate a vacuum environment; the high-energy electron gun 2 is used to simulate electron beam irradiation; the solar array 3 is used as the sample to be tested and is fixedly arranged inside the vacuum chamber through a support frame or a support platform; the position of the current probe 4 is moved according to the different positions of monitoring the solar array 3, and it cooperates with the oscilloscope 7 to monitor the discharge signal, and records the discharge process through the oscilloscope 7; the simulation power supply 5 provides a working voltage (0 - 800V) for the solar array 3 to simulate the normal working state of the solar array 3; the beam current integrator 6 is used to monitor the beam current density of the high-energy electron gun 2 hitting the surface of the solar array 3.

[0036] Further, the solar cell array 3 is composed of a loop load resistor 8 and a plurality of solar cells 9 connected in parallel.

[0037] Further, it further includes a compensation capacitor 10, and the compensation capacitor 10 is connected to the analog power supply 5 and the solar cell array 3.

[0038] Specifically, as Figure 2 shown, the solar cell array 3 is composed of a loop load resistor 8 and a plurality of solar cells 9 connected in parallel, and is connected with a compensation capacitor 10 to simulate the ground capacitance of the solar cell array 3.

[0039] Further, the energy range of the high-energy electron gun 2 is 0.1 - 2.0 MV, and its beam current range is 0.001 - 100 nA / cm 2 @0.1 - 2.0 MV.

[0040] Specifically, since the simulated electron energy is relatively high, high-energy electrons can penetrate the surface of the solar cell and penetrate into the internal structure, which will cause internal charge accumulation and may form an electric field near the pn junction or electrode of the solar cell; when the electric field strength reaches a certain level, internal discharge will be triggered, and this discharge may cause more serious damage to the internal structure of the solar cell. For example, after being bombarded by high-energy electrons, the discharge waveform may show high-amplitude and low-frequency pulses, indicating that there is more internal accumulated charge and the discharge energy is large. And at low beam current density, the energy distribution of electron bombardment is relatively dispersed, the charge accumulation speed is slow, and the discharge phenomenon of the solar cell may not be obvious, or the amplitude of the discharge waveform is small. For example, at low beam current density, the solar cell may need to be bombarded for a long time to reach the discharge threshold; while at high beam current density, the energy of electron bombardment is concentrated, the charge accumulation speed is fast, which may cause the solar cell to reach the discharge threshold faster, and the amplitude and frequency of the discharge waveform will increase. For example, at high beam current density, the solar cell may show an obvious discharge phenomenon in a short time and the discharge energy is large. Therefore, it is necessary to limit the technical index parameters of the high-energy electron gun 2. In the embodiment of the present application, its energy range is preferably 0.1 - 2.0 MV, and within the high-voltage range of 0.1 - 2.0 MV, its beam current density is preferably 0.001 - 100 nA / cm 2 ; the injection depth of its electrons is closely related to the energy of the injected electrons and the inherent characteristics of the injected material (mainly the material density), and the calculation of the range usually uses the empirical formula Weber formula, that is:

[0041]

[0042] where, E e is the electron beam energy, with the unit of MeV; R is the range, with the unit of g / cm 2; The relationship between the actual incident depth x and the range R is: R = ρx, where ρ is the density of the material, with the unit g / cm 3 .

[0043] The penetration energy of electrons required for the material of the thin-film solar array 3 is calculated according to the Weber formula as shown in Table 1:

[0044] Each layer of material Thickness (um) <![CDATA[Density (kg / m 3 )]]> Required penetration energy ETFE 25 1900 0.05 MeV Glass cover slip 90 1000 0.074 MeV Flexible battery 35 5370 0.12 MeV Glass cover slip 50 1000 0.014 MeV PI substrate 100 1420 0.1 MeV

[0045] Table 1 Penetration energy of electrons required for the material of the solar array 3

[0046] Furthermore, the vacuum degree inside the vacuum chamber 1 is < 10 -5 Pa. Before the test, the vacuum chamber 1 is evacuated by a vacuum pump to make its vacuum degree better than 10 -5 Pa.

[0047] In addition, the embodiment of the present application also provides a method for applying the in-orbit charging effect analysis and test system of the solar array, including the following steps: Step 1: Evacuate the inside of the vacuum chamber 1 to make the vacuum degree reach 8.0×10 -5 Pa; Step 2: Adjust the parameters of the high-energy electron gun 2 to make the high-energy electron gun 2 generate an electron beam with the required energy and beam current density to irradiate the sample of the solar array 3; Step 3: Set the simulation power supply 5 in the constant voltage state, and the limiting current is set according to the working current of the solar array 3; Step 4: Set the inter-string working voltage of the solar array 3 to start from a certain voltage, and use the current probe 4 to monitor the electrostatic discharge and the secondary discharge; Step 5: Adjust the voltage of the inter-string working voltage of the solar array 3 every 2 hours, repeat Step 4, and record the test results; Step 6: If the test piece discharges and breaks down during the test, stop the test; Step 7: Adjust the parameters of the high-energy electron gun 2 to change the beam current density, and repeat Steps 3 - 6 again; Step 8: Turn off the simulation power supply 5 and the high-energy electron gun 2; Step 9: Release the gas in the vacuum chamber 1, open the vacuum chamber 1, and take out the sample of the solar array 3.

[0048] The following further elaborates on the test method and results of the present application in combination with specific embodiments:

[0049] Example 1: Test results of 0.13 MeV

[0050] Adjust the electron energy of the high-energy electron gun 2 to 0.13 MeV and the beam current density to 2.0 pA / cm 2 、5.0 pA / cm 2 , to charge the inside of the sample of the solar array 3; Use the current probe 4 and the oscilloscope 7 to record and monitor the internal discharge phenomenon of the sample. During the test, the vacuum degree of the vacuum chamber 1 is better than 8.0×10 -5Pa. During the experiment, the beam current density of the electron simulation source of the high-energy electron gun 2 was uniform. The discharge results of the solar array 3 samples are shown in Table 2:

[0051]

[0052]

[0053] Table 2 0.13 MeV Test Results

[0054] The discharge waveform is as Figure 3 shown;

[0055] Example 2: 0.23 MeV Test Results

[0056] Adjust the electron energy of the high-energy electron gun 2 in the modulation mode to 0.23 MeV, and the beam current density to 2.0 pA / cm 2 , 5.0 pA / cm 2 , to charge the inside of the solar array 3 samples; use the current probe 4 and the oscilloscope 7 to record and monitor the internal discharge phenomenon of the samples. During the experiment, the vacuum degree of the vacuum chamber 1 was better than 8.0×10 -5 Pa. During the experiment, the beam current density of the electron simulation source of the high-energy electron gun 2 was uniform. The discharge results of the solar array 3 samples are shown in Table 3:

[0057] Number Test parameters Number of discharges Inter-cell voltage 1 <![CDATA[0.23MeV 2pA / cm 2 300V / 10A]]> 7 274V 2 <![CDATA[0.23MeV 2pA / cm 2 500V / 10A]]> 31 471V 3 <![CDATA[0.23MeV 2pA / cm 2 750V / 10A]]> 8 721V 4 <![CDATA[0.23MeV 5pA / cm 2 300V / 10A]]> 8 274V 5 <![CDATA[0.23MeV 5pA / cm 2 500V / 10A]]> 1 471V 6 <![CDATA[0.23MeV 5pA / cm 2 750V / 10A]]> 3 720V

[0058] Table 3 0.23 MeV Test Results

[0059] The discharge waveform is as Figure 4 shown;

[0060] Specifically, in a vacuum environment, especially under high-energy electron bombardment, charges will accumulate inside the solar cell. This charge accumulation will cause changes in the internal electric potential of the solar cell, thereby affecting the electrical performance of the solar cell. The amplitude of the discharge waveform can reflect the amount of accumulated charges. The larger the waveform amplitude, the more charges are accumulated. Evaluating the charge accumulation ability of the solar cell in the space environment can predict its stability in practical applications. Moreover, the appearance of the discharge waveform indicates that the charge accumulation between different dielectrics inside the solar cell has reached a certain threshold, thus triggering the discharge phenomenon. By analyzing the triggering conditions of the discharge waveform, the discharge threshold of the solar cell can be determined, which is used to evaluate the tolerance of the solar cell in a high-energy particle environment. The frequency and period of the discharge waveform reflect the regularity of the solar cell's discharge. If the discharge frequency is high, it means that the solar cell is prone to discharge phenomena, which may affect its normal operation. By analyzing the discharge frequency and period, the design of the solar cell can be optimized to reduce the occurrence of discharge phenomena. The area of the discharge waveform can approximately represent the discharge energy. The larger the discharge energy, the more serious the damage to the solar cell may be. By measuring the discharge energy, the damage degree of the solar cell under high-energy electron bombardment can be evaluated, thereby providing a basis for protective measures.

[0061] More specifically, as can be seen from Example 1 and Example 2, when the electron energy is 0.13 MeV, the discharge waveform shows small-amplitude pulses, and the amplitude of the discharge waveform is small. When the electron energy is 0.23 MeV, the discharge waveform shows small-amplitude pulses, and the amplitude of the discharge waveform is significantly larger than that when the electron energy is 0.13 MeV. From this, it can be obtained that under high-energy electron bombardment conditions, there are internal discharge phenomena of different degrees when the simulated solar cell array operates normally. High-energy electron bombardment has a great impact on the solar cell, resulting in serious charge accumulation and strong discharge phenomena. Under such conditions, long-term operation will seriously damage the electrical performance and structural integrity of the solar cell array, reduce the reliability, and significantly shorten the service life. The test method provided in the embodiments of the present application can accurately evaluate the damage degree of the solar cell under high-energy electron bombardment, thereby providing a basis for protective measures.

[0062] The above are only the preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A test system for analyzing the charging effect inside a solar array, characterized in that It includes a vacuum chamber, a high-energy electron gun, a solar cell array, a current probe, a simulation power supply, a beam current integrator, and an oscilloscope, where: The solar cell array is arranged inside the vacuum chamber; The high-energy electron gun is fixed on the inner wall of the vacuum chamber, and the generated electron beam irradiates on the solar cell array; The current probe is arranged inside the vacuum chamber and is connected to the solar cell array; The oscilloscope is arranged outside the vacuum chamber and is connected to the current probe for monitoring the discharge signal; The simulation power supply is arranged outside the vacuum chamber and is connected to the solar cell array for providing the working voltage; The beam current integrator is arranged outside the vacuum chamber and is connected to the solar cell array for monitoring the beam current density of the high-energy electron gun irradiating on the surface of the solar cell array; 2. The in-orbit charging effect analysis and test system for a solar array according to claim 1, characterized in that The solar cell array is composed of a loop load resistor and multiple solar cells connected in parallel; 3. The in-orbit charging effect analysis and test system for a solar array according to claim 2, wherein It further includes a compensation capacitor, and the compensation capacitor is connected to the simulation power supply and the solar cell array; 4. The in-orbit charging effect analysis and test system for a solar array according to claim 3, wherein The energy range of the high-energy electron gun is 0.1 - 2.0 MV, and its beam current range is 0.001 - 100 nA / cm 2 @0.1 - 2.0 MV.

5. The analysis and test system for the internal charging effect of a solar array according to claim 4, characterized in that The vacuum degree inside the vacuum chamber < 10 -5 Pa.

6. A method for applying the in-orbit charging effect analysis and test system of the solar array described in claim 5, characterized in that, It includes the following steps: Step 1: Evacuate the inside of the vacuum chamber to a vacuum degree of 8.0×10 -5 Pa; Step 2: Adjust the parameters of the high-energy electron gun to make the high-energy electron gun generate an electron beam with the required energy and beam current density, and irradiate the solar cell array sample; Step 3: Set the simulation power supply in the constant voltage state, and the limiting current is set according to the working current of the solar cell array; Step 4: Set the inter-string working voltage of the solar cell array to start from a certain voltage, and use the current probe to monitor the electrostatic discharge and the secondary discharge; Step 5: Adjust the voltage of the inter-string working voltage of the solar cell array once every 2 hours, repeat Step 4, and record the test results; Step 6: If the test piece discharges and breaks down during the test, stop the test; Step 7: Adjust the parameters of the high-energy electron gun to change the beam current density, and repeat Steps 3-6 again; Step 8: Turn off the simulation power supply and the high-energy electron gun; Step 9: Vent the vacuum chamber, open the vacuum chamber, and take out the solar cell array sample.

Images