Light emitting device, and electronic apparatus and electronic instrument

Abstract

The invention discloses a light-emitting device and electronic equipment and electronic equipment comprising the light-emitting device. The light emitting device includes a plurality of sub-pixels. Each of the plurality of sub-pixels includes a first electrode, a second electrode facing the first electrode, and an interlayer between the first electrode and the second electrode. The interlayer includes an emission layer, a hole injection layer disposed between the first electrode and the emission layer, and a hole transport layer disposed between the hole injection layer and the emission layer. A hole mobility of the hole transport layer is greater than a hole mobility of the hole injection layer, and a highest occupied molecular orbital (HOMO) energy level of the hole transport layer is less than or equal to a HOMO energy level of the hole injection layer. The HOMO energy level is measured by cyclic voltammetry and expressed as a negative number.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 10 - 2024 - 0006752, filed with the Korean Intellectual Property Office (KIPO) on January 16, 2024, the entire content of which is incorporated herein by reference. Technical field

[0003] Embodiments relate to a light - emitting device, an electronic device, and an electronic apparatus including the light - emitting device. Background art

[0004] A light - emitting device is a self - emitting device that has a wide viewing angle, high contrast ratio, short response time, and excellent characteristics in terms of brightness, driving voltage, and response speed.

[0005] In a light - emitting device, a first electrode is disposed on a substrate, and a hole - transport region, an emission layer, an electron - transport region, and a second electrode are sequentially disposed on the first electrode. Holes provided from the first electrode move toward the emission layer through the hole - transport region, and electrons provided from the second electrode move toward the emission layer through the electron - transport region. Carriers, such as holes and electrons, recombine in the emission layer to generate excitons. The excitons jump from the excited state to the ground state, thereby generating light.

[0006] It should be understood that this background - art section is intended to provide, in part, useful background for understanding the technology. However, this background - art section may also include ideas, concepts, or knowledge that were not known or understood by those skilled in the relevant art before the effective filing date of the subject matter disclosed herein. Summary of the invention

[0007] Embodiments include a light - emitting device, an electronic device, and an electronic apparatus including the light - emitting device.

[0008] Additional aspects will be set forth in part in the description that follows and, in part, will be obvious from the description, or may be learned by practice of the embodiments of the present disclosure.

[0009] According to an embodiment,

[0010] a light - emitting device may include a plurality of sub - pixels,

[0011] wherein the plurality of sub - pixels may include a first pixel that emits a first light, a second pixel that emits a second light, and a third pixel that emits a third light,

[0012] the first light, the second light, and the third light may have maximum emission wavelengths different from each other,

[0013] each of the plurality of sub - pixels may include

[0014] The first electrode,

[0015] a second electrode facing the first electrode, and

[0016] a sandwich layer between the first electrode and the second electrode,

[0017] The sandwich layer may include an emission layer, a hole injection layer disposed between the first electrode and the emission layer, and a hole transport layer disposed between the hole injection layer and the emission layer. The hole mobility of the hole transport layer may be greater than that of the hole injection layer, and the highest occupied molecular orbital (HOMO) energy level of the hole transport layer may be less than or equal to the HOMO energy level of the hole injection layer. The HOMO energy level may be measured by cyclic voltammetry and expressed as a negative number.

[0018] In an embodiment, the absolute value of the difference between the HOMO energy level of the hole transport layer and the HOMO energy level of the hole injection layer may be in the range of about 0 eV to about 0.3 eV.

[0019] In an embodiment, at the same driving voltage, the current density of a hole-only device including the hole transport layer but not including the hole injection layer may be less than that of a hole-only device including the hole injection layer but not including the hole transport layer.

[0020] In an embodiment, the first light may be red light, the second light may be green light, and the third light may be blue light.

[0021] In an embodiment, the hole injection layer may further include a p-dopant.

[0022] In an embodiment, the emission layer may be separated according to each of the plurality of sub-pixels.

[0023] According to an embodiment,

[0024] the light-emitting device may include a plurality of sub-pixels,

[0025] wherein the plurality of sub-pixels may include a first pixel emitting a first light, a second pixel emitting a second light, and a third pixel emitting a third light,

[0026] The first light, the second light, and the third light may have mutually different maximum emission wavelengths,

[0027] Each of the plurality of sub-pixels may include

[0028] a first electrode,

[0029] a second electrode facing the first electrode, and

[0030] a sandwich layer between the first electrode and the second electrode,

[0031] The interlayer may include an emission layer, a hole injection layer disposed between the first electrode and the emission layer, and a hole transport layer disposed between the hole injection layer and the emission layer, and

[0032] the hole mobility of the hole transport layer may be greater than the hole mobility of the hole injection layer, and

[0033] the color crosstalk (CCT) of the light-emitting device may be in the range of 0 to 5, and the CCT is calculated by Equation 1:

[0034] [Equation 1]

[0035]

[0036] In Equation 1,

[0037] Lum 1+2+3 may be the luminance of the white light of a specific tone in the case where light is emitted from all of the first pixel, the second pixel, and the third pixel such that the light-emitting device emits white light of a specific tone, where the first pixel emits first light having a first luminance under a first driving condition, the second pixel emits second light having a second luminance under a second driving condition, and the third pixel emits third light having a third luminance under a third driving condition,

[0038] Lum1 may be the luminance of the first light emitted by the light-emitting device in the case where the second pixel and the third pixel do not emit light and the first pixel emits light under the first driving condition,

[0039] Lum2 may be the luminance of the second light emitted by the light-emitting device in the case where the first pixel and the third pixel do not emit light and the second pixel emits light under the second driving condition, and

[0040] Lum3 may be the luminance of the third light emitted by the light-emitting device in the case where the first pixel and the second pixel do not emit light and the third pixel emits light under the third driving condition.

[0041] In an embodiment, the specific tone may be one of the first tone level to the tenth tone level among 256 tone levels.

[0042] In an embodiment, at the specific tone, the white light may have a luminance in the range of about 0.2 nits to about 0.6 nits.

[0043] In an embodiment, the light-emitting device may have a resolution in the range of about 100 pixels per inch (PPI) to about 1,000 PPI.

[0044] In an embodiment, the HOMO energy level of the hole transport layer may be less than or equal to the HOMO energy level of the hole injection layer. The HOMO energy level may be measured by cyclic voltammetry and expressed as a negative number.

[0045] In an embodiment, the interlayer may further include

[0046] m emission units stacked on one another, and

[0047] m - 1 charge generation units each disposed between adjacent ones of the m emission units,

[0048] m may be an integer of 2 or greater,

[0049] The first emission unit to the mth emission unit may be stacked in order from the side where the first electrode is located,

[0050] The first charge generation unit to the (m - 1)th charge generation unit may be stacked in order from the side where the first electrode is located,

[0051] The first emission unit may include an emission layer, a hole injection layer, and a hole transport layer,

[0052] Each of the first charge generation unit to the (m - 1)th charge generation unit may include a p - type charge generation layer and an n - type charge generation layer, and

[0053] The light - emitting device may further include a color conversion unit on the second electrode.

[0054] In an embodiment, the second emission unit to the mth emission unit may respectively include a second hole transport layer to an mth hole transport layer,

[0055] The p - type charge generation layers of the first charge generation unit to the (m - 1)th charge generation unit may respectively directly contact the second hole transport layer to the mth hole transport layer, and

[0056] The hole mobility of each of the second hole transport layer to the mth hole transport layer may be greater than the hole mobility of each of the p - type charge generation layers, and

[0057] The HOMO level of each of the second hole transport layer to the mth hole transport layer may be less than or equal to the HOMO level of each of the p - type charge generation layers.

[0058] According to an embodiment,

[0059] The light - emitting device may include a plurality of sub - pixels,

[0060] where the plurality of sub - pixels may include a first pixel that emits a first light, a second pixel that emits a second light, and a third pixel that emits a third light,

[0061] The first light, the second light, and the third light may have mutually different maximum emission wavelengths,

[0062] Each of the plurality of sub - pixels may include

[0063] a first electrode

[0064] a second electrode facing the first electrode

[0065] a sandwich layer between the first electrode and the second electrode, and

[0066] a color conversion unit on the second electrode

[0067] wherein the sandwich layer may include

[0068] m emission units stacked on one another, and

[0069] m - 1 charge generation units respectively disposed between adjacent emission units among the m emission units

[0070] m may be an integer of 2 or greater

[0071] the first emission unit to the mth emission unit may be stacked in sequence from the side where the first electrode is located

[0072] the first charge generation unit to the (m - 1)th charge generation unit may be stacked in sequence from the side where the first electrode is located

[0073] the first emission unit to the mth emission unit may respectively include a first hole transport layer to an mth hole transport layer

[0074] each of the first charge generation unit to the (m - 1)th charge generation unit may include a p - type charge generation layer and an n - type charge generation layer

[0075] the p - type charge generation layers of the first charge generation unit to the (m - 1)th charge generation unit may respectively directly contact the second hole transport layer to the mth hole transport layer, and

[0076] the hole mobility of each of the second hole transport layer to the mth hole transport layer may be greater than the hole mobility of each of the p - type charge generation layers, and

[0077] the HOMO energy level of each of the second hole transport layer to the mth hole transport layer may be less than or equal to the HOMO energy level of each of the p - type charge generation layers

[0078] In an embodiment, the color crosstalk (CCT) of the light - emitting device may be in the range of 0 to 5, and the CCT is calculated by Equation 1:

[0079] [Equation 1]

[0080]

[0081] In Equation 1,

[0082] Lum 1+2+3, Lum1, Lum2, and Lum3 are each defined as herein.

[0083] In an embodiment, at least one of the m light-emitting units may emit light having a maximum emission wavelength in the range of about 410 nm to about 490 nm.

[0084] In an embodiment, at least one of the m light-emitting units may emit light having a maximum emission wavelength in the range of about 490 nm to about 580 nm.

[0085] In an embodiment, m may be 4. For example, the light-emitting device may include four light-emitting units.

[0086] Three of the m light-emitting units may emit light having a maximum emission wavelength in the range of about 410 nm to about 490 nm, and

[0087] One of the m light-emitting units may emit light having a maximum emission wavelength in the range of about 490 nm to about 580 nm.

[0088] According to an embodiment, the electronic device may include a light-emitting device.

[0089] In an embodiment, the electronic device may further include a thin-film transistor.

[0090] The thin-film transistor may include a source electrode and a drain electrode, and

[0091] The first electrode of the light-emitting device may be electrically connected to at least one of the source electrode and the drain electrode of the thin-film transistor.

[0092] According to an embodiment, the electronic apparatus may include a light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0093] The above and other aspects, features, and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0094] Figure 1 is a schematic cross-sectional view for explaining the structure of a light-emitting device according to an embodiment;

[0095] Figure 2 is a schematic cross-sectional view for explaining the structure of a series-connected light-emitting device according to an embodiment;

[0096] Figure 3 is a schematic cross-sectional view for explaining the structure of a series-connected light-emitting device according to an embodiment;

[0097] Figure 4 is a schematic cross-sectional view for explaining the structure of an electronic device according to an embodiment;

[0098] Figure 5 Schematic cross-sectional view for explaining the structure of an electronic device according to an embodiment;

[0099] Figure 6 , Figure 7 , Figure 8A , Figure 8B and Figure 8C Each is a schematic diagram for explaining the structure of an electronic device according to an embodiment;

[0100] Figure 9 Graph of current density versus driving voltage measured for a hole-only device including compound A and compound B;

[0101] Figure 10 Graph of current density versus driving voltage measured for a hole-only device including compound C, compound D, and compound E;

[0102] Figure 11 Graph showing the range of resistivity coefficients of lateral current conversion measured for the test patterns of Example 1 and Comparative Example 1;

[0103] Figure 12 Graph showing the range of resistivity coefficients of lateral current conversion measured for the test patterns of Example 2 and Comparative Example 3;

[0104] Figure 13 Graph showing the range of resistivity coefficients of lateral current conversion measured for the test patterns of Example 3 and Comparative Example 5; and

[0105] Figure 14 Graph showing the range of resistivity coefficients of lateral current conversion measured for the test patterns of Example 4 and Comparative Example 7. Detailed Description of Embodiments

[0106] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings which show embodiments. However, the present disclosure may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0107] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings refer to the same components, and redundant descriptions thereof will be omitted. For clarity and ease of explanation, the dimensions of the components in the drawings may be enlarged. The embodiments described below are merely illustrative, and various modifications may be made to these embodiments.

[0108] In the description, it will be understood that when an element (or region, layer, portion, etc.) is referred to as being "on" another element (or region, layer, portion, etc.), "connected to" or "coupled to" another element (or region, layer, portion, etc.), it can be directly on the other element (or region, layer, portion, etc.), directly connected to or directly coupled to the other element (or region, layer, portion, etc.), or there can be one or more intervening elements therebetween. In a similar sense, when an element (or region, layer, portion, etc.) is described as "covering" another element (or region, layer, portion, etc.), it can directly cover the other element (or region, layer, portion, etc.), or there can be one or more intervening elements therebetween.

[0109] In the description, when an element is "directly on" another element, "directly connected to" or "directly coupled to" another element, there is no intervening element. For example, "directly on" can mean that two layers or two elements are disposed with no additional element (such as an adhesive element) therebetween.

[0110] As used herein, expressions used in the singular form, such as "a", "an" and "the", are intended to also include the plural forms, unless the context clearly indicates otherwise.

[0111] In the specification and claims, for purposes of their meaning and interpretation, the phrase "at least one of" is intended to include the meaning of "at least one selected from the group consisting of". For example, "at least one of A and B" can be understood to mean "A, B, or A and B". In the specification and claims, for purposes of their meaning and interpretation, the term "and / or" is intended to include any combination of the terms "and" and "or". For example, "A and / or B" can be understood to mean "A, B, or A and B". The terms "and" and "or" can be used in a conjunctive sense or a disjunctive sense and can be understood to be equivalent to "and / or".

[0112] It will be understood that although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, without departing from the teachings of the present disclosure, the first element can be referred to as the second element. Similarly, without departing from the scope of the present disclosure, the second element can be referred to as the first element.

[0113] For ease of description, spatially relative terms such as "below", "beneath", "under", "above", or "on" etc. may be used herein to describe the relationship between one element or component and another element or component as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, in the case of flipping the device illustrated in the figures, a device located "below" or "beneath" another device may be placed "above" the other device. Accordingly, the illustrative term "below" may include both the lower and upper positions. The device may also be oriented in other directions, and thus the spatially relative terms may be interpreted differently depending on the orientation.

[0114] As used herein, the term "about" or "approximate" includes the recited value and means within an acceptable deviation range of the recited value determined by one of ordinary skill in the art in view of the measurements discussed and the errors associated with the measurement of the recited quantity (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the recited value, or within ±20%, ±10%, or ±5% of the recited value.

[0115] It should be understood that the terms "comprise", "comprising", "include", "including", "have", "having", "contain", and "containing" etc. are intended to indicate the presence of the recited features, integers, steps, operations, elements, components, or combinations thereof in the present disclosure, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

[0116] As used herein, the term "interlayer" refers to a single layer and / or multiple layers disposed between the first electrode and the second electrode of a light-emitting device, or between the anode and the cathode.

[0117] As used herein, the term "common layer" refers to a layer that extends horizontally in the stacked structure of a light-emitting device and is shared by adjacent pixels. Layers in the charge transport region (such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, an electron blocking layer, and a hole blocking layer), and the second electrode may be formed as a common layer. The emission layer may be separated by each sub-pixel to emit light of different colors, or may be formed as a common layer that emits light of the same color.

[0118] Unless otherwise defined or implied herein, all terms used (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense unless clearly defined in the specification.

[0119] The light-emitting device according to an embodiment may include

[0120] a plurality of sub-pixels,

[0121] wherein the sub-pixels may include a first pixel emitting a first light, a second pixel emitting a second light, and a third pixel emitting a third light,

[0122] the first light, the second light, and the third light may have mutually different maximum emission wavelengths,

[0123] each of the sub-pixels may include:

[0124] a first electrode;

[0125] a second electrode facing the first electrode; and

[0126] a sandwich layer between the first electrode and the second electrode, and

[0127] the sandwich layer may include: an emission layer; a hole injection layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the hole injection layer and the emission layer.

[0128] The first electrode may be separated for each sub-pixel.

[0129] The light-emitting device may satisfy condition i and condition ii:

[0130] Condition i

[0131] the hole mobility of the hole transport layer may be greater than the hole mobility of the hole injection layer; and

[0132] Condition ii

[0133] the highest occupied molecular orbital (HOMO) energy level of the hole transport layer may be less than or equal to the HOMO energy level of the hole injection layer, where the HOMO energy level is measured by cyclic voltammetry and expressed as a negative number.

[0134] When driving a light-emitting device, holes (h+) can be injected from the first electrode, move through the hole injection layer and the hole transport layer to the emission layer, and recombine with electrons injected from the second electrode in the emission layer to generate light. To drive adjacent pixels independently of each other, the holes injected from the first electrode can move only in the vertical direction (towards the emission layer). However, since the hole injection layer and the hole transport layer are formed as a common layer, the holes injected from the first electrode can also move in the horizontal direction, and the horizontal movement component of the holes can form a lateral leakage current to adjacent pixels. As the resolution increases, the gap between pixels, e.g., the gap between the first electrodes, can decrease, and the lateral leakage current can increase. In the case where a lateral leakage current occurs, there can be a brightness difference, resulting in a reduction in color gamut reproducibility and / or efficiency.

[0135] In an embodiment, a method for further improving the vertical movement of holes to reduce the lateral leakage current is provided, and for this purpose, the hole transport layer has a hole mobility higher than that of the hole injection layer. When the hole mobility of the hole transport layer is higher than that of the hole injection layer, the resistance of the hole transport layer can be smaller than that of the hole injection layer, and thus, the vertical movement of holes from the first electrode to the emission layer, e.g., the vertical current, can be improved, and the horizontal lateral leakage current can be reduced or eliminated.

[0136] In an embodiment, since the HOMO energy level of the hole transport layer is between the HOMO energy level of the hole injection layer and the HOMO energy level of the emission layer, the energy barrier for injecting holes from the hole injection layer into the emission layer can be reduced. For example, the HOMO energy level of the hole transport layer can be less than or equal to the HOMO energy level of the hole injection layer. For example, the absolute value of the difference between the HOMO energy level of the hole injection layer and the HOMO energy level of the hole transport layer can be in the range of about 0 eV to 0.3 eV. For example, when the HOMO energy level of the hole transport layer is -5.3 eV, the HOMO energy level of the hole injection layer can be in the range of about -5.0 eV to about -5.3 eV.

[0137] Table 1 shows the hole mobility and HOMO energy level of compounds of some hole transport layers. The HOMO energy level is measured by cyclic voltammetry and expressed as a negative number. For example, when the compound of the hole injection layer is 2-TNATA, TAPC can be used as the compound of the hole transport layer, and TAPC has a hole mobility higher than that of 2-TNATA and a HOMO energy level lower than that of 2-TNATA.

[0138] [Table 1]

[0139] Compound <![CDATA[Hole mobility (V·s / cm 2 )]]> HOMO Energy Level (eV) TAPC <![CDATA[2.45×10 -3 > -5.5 2-TNATA <![CDATA[6.40×10 -5 > -5.1 NPB <![CDATA[2.18×10 -4 > -5.4 TPD <![CDATA[1.40×10 -3 > -5.4 TBBD <![CDATA[1.74×10 -2 > -5.3

[0140] The compounds in Table 1 are provided for comparing hole mobility and HOMO energy levels, and the compounds that can be used in the hole injection layer and hole transport layer of a light-emitting device are not limited to the compounds shown in Table 1. In an embodiment, the compounds for the hole injection layer and hole transport layer can be selected from the compounds that can be included in the hole transport region described herein to meet the above conditions of hole mobility and / or HOMO energy level.

[0141] By comparing the graphs of current density versus driving voltage obtained for a hole-only device including a hole transport layer or a hole injection layer, the hole mobility relationship between the hole transport layer and the hole injection layer can be inferred. The graph of current density versus driving voltage shows a J shape, where the current density gradually increases as the driving voltage increases, and the increase amount of the current density starts to increase from a specific driving voltage.

[0142] In an embodiment, the graph of current density versus driving voltage of a hole-only device including a hole transport layer can be shifted toward a lower driving voltage compared to the graph of current density versus driving voltage of a hole-only device including a hole injection layer. That is, the graph of current density of a hole-only device including a hole transport layer and not including a hole injection layer can be shifted toward a lower driving voltage compared to the graph of current density of a hole-only device including a hole injection layer and not including a hole transport layer. In this case, at the same driving voltage, the current density of a hole-only device including a hole transport layer can be greater than the current density of a hole-only device including a hole injection layer, and thus, it can be inferred that the hole transport layer can have a greater hole mobility than the hole injection layer. It can also be inferred that the hole transport layer can have a lower resistance than the hole injection layer.

[0143] In an embodiment, the hole injection layer can further include a p-dopant. Details regarding the p-dopant are the same as those described herein.

[0144] In an embodiment, the thickness of the hole injection layer can be in the range of about to about . For example, the thickness of the hole injection layer can be in the range of about to about . For example, the thickness of the hole injection layer can be in the range of about to about . In an embodiment, the thickness of the hole transport layer can be in the range of about to about . For example, the thickness of the hole transport layer can be in the range of about to about . For example, the thickness of the hole transport layer can be in the range of about to about .

[0145] The light-emitting device according to an embodiment may include

[0146] a plurality of sub-pixels,

[0147] wherein the sub-pixels may include a first pixel emitting first light, a second pixel emitting second light, and a third pixel emitting third light,

[0148] the first light, the second light, and the third light may have maximum emission wavelengths different from each other,

[0149] each of the sub-pixels may include:

[0150] a first electrode;

[0151] a second electrode facing the first electrode; and

[0152] a sandwich layer between the first electrode and the second electrode,

[0153] the sandwich layer may include: a light-emitting layer; a hole injection layer disposed between the first electrode and the light-emitting layer; and a hole transport layer disposed between the hole injection layer and the light-emitting layer, and

[0154] may satisfy condition i and condition iii:

[0155] Condition i

[0156] the hole mobility of the hole transport layer may be greater than the hole mobility of the hole injection layer; and

[0157] Condition iii

[0158] the color cross-talk (CCT) of the light-emitting device may be in the range of 0 to 5, and the CCT is calculated by Equation 1:

[0159] [Equation 1]

[0160]

[0161] In Equation 1,

[0162] Lum 1+2+3 may be the luminance of a specific tone of white light when all of the first pixels, the second pixels, and the third pixels emit light such that the light-emitting device emits white light of a specific tone, wherein the first pixel emits first light having a first luminance under a first driving condition, the second pixel emits second light having a second luminance under a second driving condition, and the third pixel emits third light having a third luminance under a third driving condition,

[0163] Lum1 may be the luminance of the first light emitted by the light-emitting device when the second pixel and the third pixel do not emit light and the first pixel emits light under the first driving condition,

[0164] Lum2 can be the luminance of the second light emitted by the light-emitting device when the first pixel and the third pixel do not emit light and the second pixel emits light under the second driving condition, and

[0165] Lum3 can be the luminance of the third light emitted by the light-emitting device when the first pixel and the second pixel do not emit light and the third pixel emits light under the third driving condition.

[0166] Condition i can be the same as that described herein.

[0167] The light-emitting device according to an embodiment may have an enhanced vertical component current from the first electrode and a color crosstalk (CCT) value in the range of 0 to 5 represented by Equation 1. The CCT can be obtained from the difference between the luminance of the white light emitted when all the pixels of the light-emitting device emit light and the sum of the luminances of the lights of specific colors that are mixed to form white light when only the pixels of a specific color emit light. It is expected that the smaller the CCT (i.e., the difference between the luminance of the white light and the sum of the luminances of the lights of a single color), the smaller the lateral leakage current between the pixels.

[0168] To cause the light-emitting device to emit white light, each pixel of the light-emitting device may emit light of a color that forms white light. For example, the first pixel may be a red pixel, the second pixel may be a green pixel, the third pixel may be a blue pixel, the first light may be red light, the second light may be green light, and the third light may be blue light. In another embodiment, the mixed light of the first light, the second light, and the third light may be white light, where each of the first light, the second light, and the third light may have a color different from red light, green light, or blue light.

[0169] In Lum in Equation 1 1+2+3 is the luminance of white light of a specific tone and when the light-emitting device emits white light having the above luminance, the driving conditions of the first pixel, the driving conditions of the second pixel, and the driving conditions of the third pixel may be different, and the contribution of each color in forming white light may also be different. The driving condition of each pixel may include, for example, a driving voltage or a driving current. When emitting white light, the driving condition for the light-emitting device of the first pixel to emit light may also be the driving condition for the light-emitting devices of the second pixel and the third pixel to emit light. When calculating the CCT, when the second pixel and the third pixel are turned off, under the above driving conditions, Lum1 can be the luminance of the first light emitted from the first pixel. Lum2 and Lum3 can be defined in the same manner as Lum1.

[0170] In the presence of lateral leakage current, under the same driving conditions (driving voltage or driving current), when the first pixel and pixels of other colors emit light, the luminance of the first light in the white light may be different from the luminance of the first light when the first pixel is driven alone and pixels of other colors do not emit light. Similar to the first light, when each of the second pixel and the third pixel is driven alone under the same driving conditions as those in the white light, the luminance of each of the second light and the third light may be different from the luminance of each of the second light and the third light in the white light. Under the same driving conditions, when the luminance of each of the first light, the second light, and the third light in the white light is different from the luminance of each of the first light, the second light, and the third light alone, the CCT may not be 0, and as the luminance difference increases, the value of the CCT may increase.

[0171] As described above, Lum 1+2+3 may be the luminance of white light of a specific tone emitted by the light-emitting device. The tone may be the degree to which the gradual change in luminance is represented by levels. For example, lower tones among all tones may appear darker and may have lower luminance. For example, for the luminance of one of the first tone to the tenth tone or one of the first tone to the fifth tone in 256-level tones, the CCT represented by Equation 1 may be in the range of 0 to 5, in the range of 0 to 4, or in the range of 0 to 3. For example, for the luminance of the fourth tone in 256-level tones, the CCT represented by Equation 1 may be in the range of 0 to 5, in the range of 0 to 4, or in the range of 0 to 3. In another embodiment, for white light having a luminance in the range of about 0.1 nits to about 1.0 nits, about 0.1 nits to about 0.8 nits, or about 0.2 nits to about 0.6 nits emitted by the light-emitting device, the CCT represented by Equation 1 may be in the range of 0 to 5, in the range of 0 to 4, or in the range of 0 to 3.

[0172] In an embodiment, the light-emitting device may have a resolution in the range of about 100 pixels per inch (PPI) to about 1,000 PPI. For example, the light-emitting device may have a resolution in the range of about 100 PPI to about 500 PPI. For example, the light-emitting device may have a resolution in the range of about 120 PPI to about 300 PPI. For example, the light-emitting device may have a resolution in the range of about 140 PPI to about 200 PPI.

[0173] The light-emitting device may further satisfy the above-described condition ii. For example, the HOMO energy level of the hole transport layer may be less than or equal to the HOMO energy level of the hole injection layer.

[0174] In an embodiment, the first light may be red light, the second light may be green light, and the third light may be blue light.

[0175] In an embodiment, the emission layer may be separated for each sub-pixel. For example, the interlayer of the light-emitting device may include only one emission unit.

[0176] In an embodiment, the interlayer may include a plurality of stacked emission units and charge generation units between adjacent emission units, and the light-emitting device may be a tandem light-emitting device. Each of the emission units may include a hole transport region, an emission layer, and an electron transport region, and each of the charge generation units may include a p-type charge generation layer and an n-type charge generation layer.

[0177] In addition, the thickness of the electron blocking layer may be in the range of about to about The thickness of the hole blocking layer may be in the range of about to about The thickness of the n-type charge generation layer may be in the range of about to about The thickness of the p-type charge generation layer may be in the range of about to about The range of

[0178] Figure 1 description

[0179] Figure 1 FIG. 31 is a schematic cross-sectional view of a light-emitting device 10 according to an embodiment. The light-emitting device 10 may include a first electrode 110, an interlayer 130, and a second electrode 150.

[0180] Hereinafter, with reference to Figure 1 the structure of the light-emitting device 10 according to an embodiment and a method of manufacturing the light-emitting device 10 are described.

[0181] [First Electrode 110]

[0182] In Figure 1 , a substrate may be further included under the first electrode 110 or on the second electrode 150. In an embodiment, the substrate may be a glass substrate or a plastic substrate. In an embodiment, the substrate may be a flexible substrate and may include a plastic having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0183] The first electrode 110 may be formed, for example, by depositing or sputtering a material for forming the first electrode 110 on the substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 may be a high work function material that facilitates hole injection.

[0184] ​The first electrode 110 can be a reflective electrode, a transmissive-reflective electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, the material for forming the first electrode 110 can include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In an embodiment, when the first electrode 110 is a transmissive-reflective electrode or a reflective electrode, the material for forming the first electrode 110 can include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0185] The first electrode 110 can have a single-layer structure composed of a single layer or a multi-layer structure including multiple layers. In an embodiment, the first electrode 110 can have a three-layer structure of ITO / Ag / ITO.

[0186] [Interlayer 130]

[0187] The interlayer 130 can be disposed on the first electrode 110. The interlayer 130 can include an emission layer.

[0188] The interlayer 130 can further include a hole transport region between the first electrode 110 and the emission layer, and an electron transport region between the emission layer and the second electrode 150.

[0189] In addition to various organic materials, the interlayer 130 can further include a metal-containing compound (such as an organometallic compound) or an inorganic material (such as a quantum dot), etc.

[0190] In an embodiment, the interlayer 130 can include two or more emission units stacked between the first electrode 110 and the second electrode 150 and at least one charge generation unit disposed between two adjacent emission units. When the interlayer 130 includes two or more emission units and at least one charge generation unit as described above, the light-emitting device 10 can be a tandem light-emitting device.

[0191] [Hole Transport Region in Interlayer 130]

[0192] The hole transport region can have: a single-layer structure composed of a single layer (composed of a single material), a single-layer structure composed of a single layer containing different materials, or a multi-layer structure including multiple layers containing different materials. The hole transport region can include a hole injection layer, a hole transport layer, an emission assisting layer, an electron blocking layer, or any combination thereof.

[0193] In an embodiment, the hole transport region may have a multi-layer structure including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission assisting layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, wherein the constituent layers of each structure may be stacked from the first electrode 110 in the order described for each, but the structure of the hole transport region is not limited thereto.

[0194] The hole transport region may include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0195] [Formula 201]

[0196]

[0197] [Formula 202]

[0198]

[0199] In Formulas 201 and 202,

[0200] L 201 to L 204 may each independently be an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group,

[0201] L 205 may be *-O-*', *-S-*', *-N(Q 201 )-*', an unsubstituted or at least one R 10a substituted C1-C 20 alkylene group, an unsubstituted or at least one R 10a substituted C2-C 20 alkenylene group, an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group,

[0202] xa1 to xa4 may each independently be an integer selected from 0 to 5,

[0203] xa5 may be an integer selected from 1 to 10,

[0204] R 201 to R 204 and Q 201 may each independently be an unsubstituted or at least one R 10a substituted C3-C60 A carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group,

[0205] R 201 and R 202 may optionally be linked to each other via a single bond, an unsubstituted or at least one R 10a substituted C1-C5 alkylene group or an unsubstituted or at least one R 10a substituted C2-C5 alkenylene group to form an unsubstituted or at least one R 10a substituted C8-C 60 polycyclic group (e.g., carbazolyl, etc.) (e.g., compound HT16, etc.),

[0206] R 203 and R 204 may optionally be linked to each other via a single bond, an unsubstituted or at least one R 10a substituted C1-C5 alkylene group or an unsubstituted or at least one R 10a substituted C2-C5 alkenylene group to form an unsubstituted or at least one R 10a substituted C8-C 60 polycyclic group, and

[0207] na1 may be an integer selected from 1 to 4.

[0208] In an embodiment, the compound represented by formula 201 and the compound represented by formula 202 may each independently include at least one of the groups represented by formulae CY201 to CY217:

[0209]

[0210] In formulae CY201 to CY217, R 10b and R 10c may each independently be the same as described for the binding R 10a ring CY 201 to ring CY 204 may each independently be a C3-C 20 carbocyclic group or a C1-C 20 heterocyclic group, and at least one hydrogen in formulae CY201 to CY217 may be unsubstituted or substituted by R 10a substituted.

[0211] In an embodiment, in formulae CY201 to CY217, ring CY 201 to ring CY 204 may each independently be phenyl, naphthyl, phenanthryl or anthracenyl.

[0212] In an embodiment, the compound represented by Formula 201 and the compound represented by Formula 202 may each independently include at least one of the groups represented by Formula CY201 to Formula CY203.

[0213] In an embodiment, the compound represented by Formula 201 may include at least one of the groups represented by Formula CY201 to Formula CY203 and at least one of the groups represented by Formula CY204 to Formula CY217.

[0214] In an embodiment, in Formula 201, xa1 may be 1, R 201 may be a group represented by one of Formula CY201 to Formula CY203, xa2 may be 0, and R 202 may be a group represented by one of Formula CY204 to Formula CY207.

[0215] In an embodiment, the compound represented by Formula 201 and the compound represented by Formula 202 may each not include the groups represented by Formula CY201 to Formula CY203.

[0216] In an embodiment, the compound represented by Formula 201 and the compound represented by Formula 202 may each not include the groups represented by Formula CY201 to Formula CY203, and may each independently include at least one of the groups represented by Formula CY204 to Formula CY217.

[0217] In an embodiment, the compound represented by Formula 201 and the compound represented by Formula 202 may each not include the groups represented by Formula CY201 to Formula CY217.

[0218] In an embodiment, the hole transport region may include: one of Compound HT1 to Compound HT46; m-MTDATA; TDATA; 2-TNATA; NPB (NPD); β-NPB; TPD; TBBD; spiro-TPD; spiro-NPB; methylated NPB; TCPC; TAPC; HMTPD; 4,4',4”-tris(N-carbazolyl)triphenylamine (TCTA); polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA); poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS); polyaniline / camphorsulfonic acid (PANI / CSA); polyaniline / poly(4-styrenesulfonate) (PANI / PSS); or any combination thereof:

[0219]

[0220]

[0221]

[0222]

[0223]

[0224] The thickness of the hole transport region can be in the range of about to about For example, the thickness of the hole transport region can be in the range of about to about In the case where the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer can be in the range of about to about and the thickness of the hole transport layer can be in the range of about to about For example, the thickness of the hole injection layer can be in the range of about to about For example, the thickness of the hole transport layer can be in the range of about to about When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within the above ranges, satisfactory hole transport characteristics can be obtained without significantly increasing the driving voltage.

[0225] The emission assisting layer can increase the light emission efficiency by compensating for the optical resonance distance according to the wavelength of the light emitted from the emission layer, and the electron blocking layer can block the leakage of electrons from the emission layer to the hole transport region. Materials that can be included in the hole transport region can be included in the emission assisting layer and the electron blocking layer.

[0226] [p-dopant]

[0227] In addition to the above materials, the hole transport region can further include a charge generation material for improving the conductive characteristics. The charge generation material can be uniformly or non-uniformly dispersed in the hole transport region (e.g., in the form of a single layer composed of the charge generation material).

[0228] The charge generation material can be, for example, a p-dopant.

[0229] In an embodiment, the lowest unoccupied molecular orbital (LUMO) energy level of the p-dopant can be less than or equal to about -3.5 eV.

[0230] In an embodiment, the p-dopant can include a quinone derivative, a cyanide-containing compound, a compound including element EL1 and element EL2, or any combination thereof.

[0231] Examples of the quinone derivative can include TCNQ, F4-TCNQ, etc.

[0232] Examples of the cyano group-containing compounds may include HAT-CN and the compounds represented by Formula 221, etc.:

[0233]

[0234] [Formula 221]

[0235]

[0236] In Formula 221,

[0237] R 221 to R 223 may each independently be an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group, and

[0238] R 221 to R 223 at least one of which may each independently be a C3-C 60 carbocyclic group or C1-C 60 heterocyclic group each substituted by the following: cyano group; -F; -Cl; -Br; -I; a C1-C 20 alkyl group substituted by a cyano group, -F, -Cl, -Br, -I or any combination thereof; or any combination thereof.

[0239] In the compound including element EL1 and element EL2, element EL1 may be a metal, a metalloid or any combination thereof, and element EL2 may be a non-metal, a metalloid or any combination thereof.

[0240] Examples of metals may include: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); post-transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); and lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.), etc.

[0241] Examples of metalloids may include silicon (Si), antimony (Sb), tellurium (Te), etc.

[0242] Examples of non-metals may include oxygen (O) and halogens (e.g., F, Cl, Br, I, etc.), etc.

[0243] Examples of compounds including element EL1 and element EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides, metalloid iodides, etc.), metal tellurides, or any combination thereof.

[0244] Examples of metal oxides may include tungsten oxides (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxides (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxides (e.g., MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), and rhenium oxides (e.g., ReO3, etc.), etc.

[0245] Examples of metal halides may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and lanthanide metal halides, etc.

[0246] Examples of alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, and CsI, etc.

[0247] Examples of alkaline earth metal halides may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2, etc.

[0248] Examples of transition metal halides may include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), tantalum halides (e.g., TaF3, TaCl3, TaBr3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr2, ReI2, etc.), ferrous halides (e.g., FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2, etc.), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halides (e.g., IrF2, IrCl2, IrBr2, IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.), cuprous halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), and gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.

[0249] Examples of post-transition metal halides can include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.), and tin halides (e.g., SnI2, etc.).

[0250] Examples of lanthanide metal halides can include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, and SmI3.

[0251] Examples of metalloid halides can include antimony halides (e.g., SbCl5, etc.).

[0252] Examples of metal tellurides can include alkali metal tellurides (e.g., Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.).

[0253] As described above, the materials of the hole transport layer and the hole injection layer can be selected such that the hole mobility of the hole transport layer can be greater than that of the hole injection layer.

[0254] In an embodiment, the materials of the hole transport layer and the hole injection layer can be selected such that the HOMO energy level of the hole transport layer can be less than or equal to the HOMO energy level of the hole injection layer.

[0255] [Emission layer in interlayer 130]

[0256] When the light-emitting device 10 is a full-color light-emitting device, the emission layer may be patterned into a red emission layer, a green emission layer, and / or a blue emission layer according to sub-pixels. In an embodiment, the emission layer may have a stacked structure of two or more layers among a red emission layer, a green emission layer, and a blue emission layer, where the two or more layers are in contact with each other or separated from each other to emit white light. In an embodiment, the emission layer may include two or more materials among a red light-emitting material, a green light-emitting material, and a blue light-emitting material, where the two or more materials may be mixed with each other in a single layer to emit white light.

[0257] In an embodiment, the emission layer may include a host and a dopant (or emitter). In an embodiment, in addition to the host and the dopant (or emitter), the emission layer may further include a co-dopant that promotes energy transfer to the dopant (or to the emitter). When the emission layer includes a dopant (or emitter) and a co-dopant, the dopant (or emitter) and the co-dopant may be different from each other.

[0258] Based on 100 parts by weight of the host, the amount (by weight) of the dopant (or emitter) in the emission layer may be in the range of about 0.01 part by weight to about 15 parts by weight.

[0259] In an embodiment, the emission layer may include quantum dots.

[0260] In an embodiment, the emission layer may include a delayed fluorescence material. The delayed fluorescence material may act as a host or a dopant in the emission layer.

[0261] The thickness of the emission layer may be in the range of about to about . For example, the thickness of the emission layer may be in the range of about to about . When the thickness of the emission layer is in the above range, excellent light-emitting characteristics can be obtained without significantly increasing the driving voltage.

[0262] [Host]

[0263] In an embodiment, the host may include a compound represented by Formula 301:

[0264] [Formula 301]

[0265] [Ar 301 xb11 -[(L 301 ) xb1 -R 301 xb21 .

[0266] In Formula 301,

[0267] Ar 301 and L​​301 may each independently be unsubstituted or substituted by at least one R 10a -substituted C3-C 60 carbocyclic group or unsubstituted or substituted by at least one R 10a -substituted C1-C 60 heterocyclic group,

[0268] xb11 can be 1, 2 or 3,

[0269] xb1 can be an integer selected from 0 to 5,

[0270] R 301 can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted by at least one R 10a -substituted C1-C 60 alkyl, unsubstituted or substituted by at least one R 10a -substituted C2-C 60 alkenyl, unsubstituted or substituted by at least one R 10a -substituted C2-C 60 alkynyl, unsubstituted or substituted by at least one R 10a -substituted C1-C 60 alkoxy, unsubstituted or substituted by at least one R 10a -substituted C3-C 60 carbocyclic group, unsubstituted or substituted by at least one R 10a -substituted C1-C 60 heterocyclic group, -Si(Q 301 )(Q 302 )(Q 303 )、-N(Q 301 )(Q 302 )、-B(Q 301 )(Q 302 )、-C(=O)(Q 301 )、-S(=O)2(Q 301 ) or -P(=O)(Q 301 )(Q 302 ),

[0271] xb21 can be an integer selected from 1 to 5, and

[0272] Q 301 to Q 303 are each independently the same as described for the binding Q1.

[0273] In an embodiment, in Formula 301, when xb11 is 2 or greater, two or more Ars 301 can be connected to each other via a single bond.

[0274] In an embodiment, the subject may comprise a compound represented by Formula 301-1, a compound represented by Formula 301-2, or any combination thereof:

[0275] [Formula 301-1]

[0276]

[0277] [Formula 301-2]

[0278]

[0279] In Formulas 301-1 and 301-2,

[0280] Ring A 301 to Ring A 304 may each independently be an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group,

[0281] X 301 may be O, S, N[(L 304 ) xb4 -R 304 , C(R 304 )(R 305 ), or Si(R 304 )(R 305 ),

[0282] xb22 and xb23 may each independently be 0, 1, or 2,

[0283] L 301 , xb1, and R 301 are each the same as described herein,

[0284] L 302 to L 304 are each independently the same as those described in connection with L 301 ,

[0285] xb2 to xb4 are each independently the same as those described in connection with xb1, and

[0286] R 302 to R 305 and R 311 to R 314 may each independently be the same as those described in connection with R 301 .

[0287] In an embodiment, the host may include an alkaline earth metal complex, a post-transition metal complex, or any combination thereof. In an embodiment, the host may include a Be complex (e.g., compound H55), a Mg complex, a Zn complex, or any combination thereof.

[0288] In an embodiment, the host may include one of Compounds H1 to H129; 9,10-bis(2-naphthyl)anthracene (ADN); 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN); 9,10-bis(2-naphthyl)-2-tert-butyl-anthracene (TBADN); 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP); 1,3-bis(9-carbazolyl)benzene (mCP); 1,3,5-tris(carbazol-9-yl)benzene (TCP); or any combination thereof:

[0289]

[0290]

[0291]

[0292]

[0293]

[0294]

[0295]

[0296] In an embodiment, the host may include a silicon-containing compound, a phosphine oxide-containing compound, or any combination thereof. The host may have various modifications. For example, the host may include only one type of compound, or may include two or more different types of compounds.

[0297] [Phosphorescent dopant]

[0298] The phosphorescent dopant may include at least one transition metal as the central metal.

[0299] The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, or any combination thereof.

[0300] The phosphorescent dopant may be electrically neutral.

[0301] In an embodiment, the phosphorescent dopant may include an organometallic compound represented by Formula 401:

[0302] [Formula 401]

[0303] M(L 401 ) xc1(L 402 ) xc2

[0304] [Formula 402]

[0305]

[0306] In Formula 401 and Formula 402,

[0307] M can be a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)),

[0308] L 401 can be a ligand represented by Formula 402, and xc1 can be 1, 2, or 3. Wherein, when xc1 is 2 or greater, two or more L 401 can be the same as or different from each other,

[0309] L 402 can be an organic ligand, and xc2 can be 0, 1, 2, 3, or 4. Wherein, when xc2 is 2 or greater, two or more L 402 can be the same as or different from each other,

[0310] X 401 and X 402 can each independently be nitrogen or carbon,

[0311] Ring A 401 and Ring A 402 can each independently be a C3-C 60 carbocyclic group or a C1-C 60 heterocyclic group,

[0312] T 401 can be a single bond, *-O-*', *-S-*', *-C(=O)-*', *-N(Q 411 )-*', *-C(Q 411 )(Q 412 )-*',

[0313] *-C(Q 411 )=C(Q 412 )-*', *-C(Q 411 )=*' or *=C=*',

[0314] X 403 and X 404 can each independently be a chemical bond (e.g., a covalent bond or a coordination bond), O, S, N(Q 413 ), B(Q 413 ), P(Q413 ), C(Q 413 )(Q 414 ) or Si(Q 413 )(Q 414 ),

[0315] Q 411 to Q 414 can each independently be the same as described in connection with Q1,

[0316] R 401 and R 402 can each independently be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxy, cyano, nitro, unsubstituted or substituted by at least one R 10a substituted C1-C 20 alkyl, unsubstituted or substituted by at least one R 10a substituted C1-C 20 alkoxy, unsubstituted or substituted by at least one R 10a substituted C3-C 60 carbocyclic group, unsubstituted or substituted by at least one R 10a substituted C1-C 60 heterocyclic group, -Si(Q 401 )(Q 402 )(Q 403 ), -N(Q 401 )(Q 402 ), -B(Q 401 )(Q 402 ), -C(=O)(Q 401 ), -S(=O)2(Q 401 ), or -P(=O)(Q 401 )(Q 402 ),

[0317] Q 401 to Q 403 can each independently be the same as described in connection with Q1,

[0318] xc11 and xc12 can each independently be an integer selected from 0 to 10, and

[0319] * and *' in formula 402 each indicate the binding site to M in formula 401.

[0320] In an embodiment, in formula 402, X 401 can be nitrogen and X 402 can be carbon, or X 401 and X 402 can each be nitrogen.

[0321] In an embodiment, in formula 401, when xc1 is 2 or greater, two or more L401 Two rings A in 401 can optionally be connected to each other via T as a linking group 402 or two or more Ls 401 Two rings A in 402 can optionally be connected to each other via T as a linking group 403 (see Compounds PD1 to PD4 and Compound PD7). T 402 and T 403 can each independently be the same as described for binding T 401 .

[0322] In Formula 401, L 402 can be an organic ligand. In an embodiment, L 402 can include a halogen group, a diketone group (e.g., acetylacetonyl), a carboxylic acid group (e.g., picolinato), a -C(=O) group, an isocyano group, a -CN group, a phosphorus-containing group (e.g., phosphino, phosphite, etc.) or any combination thereof.

[0323] The phosphorescent dopant can include, for example, one or any combination of Compounds PD1 to PD39:

[0324]

[0325]

[0326]

[0327] [Fluorescent dopant]

[0328] In an embodiment, the emissive layer can include a fluorescent dopant. The fluorescent dopant can include an amine group-containing compound, a styryl group-containing compound or any combination thereof.

[0329] In an embodiment, the fluorescent dopant can include a compound represented by Formula 501:

[0330] [Formula 501]

[0331]

[0332] In Formula 501,

[0333] Ar 501 , L 501 to L 503 , R 501 and R 502 can each independently be an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C60 Heterocyclic group

[0334] xd1 to xd3 can each independently be 0, 1, 2, or 3, and

[0335] xd4 can be 1, 2, 3, 4, 5, or 6.

[0336] In an embodiment, in Formula 501, Ar 501 can be a fused ring group in which three or more monocyclic groups are fused to each other (for example, anthryl, 1,2-benzophenanthryl, pyrenyl, etc.).

[0337] In an embodiment, in Formula 501, xd4 can be 2.

[0338] In an embodiment, the fluorescent dopant can include: one of Compound FD1 to Compound FD37; DPVBi; DPAVBi; or any combination thereof:

[0339]

[0340]

[0341]

[0342] [Thermally activated delayed fluorescence material]

[0343] The emission layer can further include a thermally activated delayed fluorescence material.

[0344] The thermally activated delayed fluorescence materials described herein can be selected from compounds capable of emitting thermally activated delayed fluorescence based on a thermally activated delayed fluorescence emission mechanism.

[0345] Depending on the type of other materials included in the emission layer, the thermally activated delayed fluorescence material included in the emission layer can be used as a host or a dopant.

[0346] In an embodiment, the difference between the triplet energy level (eV) of the thermally activated delayed fluorescence material and the singlet energy level (eV) of the thermally activated delayed fluorescence material can be in the range of about 0 eV to about 0.5 eV. When the difference between the triplet energy level (eV) and the singlet energy level (eV) of the thermally activated delayed fluorescence material is within the above range, upconversion from the triplet state to the singlet state of the thermally activated delayed fluorescence material can occur effectively, and thus, the light-emitting device 10 can have improved luminous efficiency.

[0347] In an embodiment, the thermally activated delayed fluorescence material can include: including at least one electron donor (for example, a π-electron rich C3-C 60 cyclic group, such as a carbazolyl group, etc.) and at least one electron acceptor (for example, a sulfinyl group, a cyano group, a π-electron deficient nitrogen-containing C1-C 60materials such as cyclic groups, and materials including a polycyclic group in which two or more cyclic groups are fused while sharing boron (B), C8-C 60 materials such as polycyclic groups, etc.

[0348] Examples of the delayed fluorescence material may include at least one of Compound DF1 to Compound DF14:

[0349]

[0350]

[0351] [Quantum dots]

[0352] The emission layer may include quantum dots.

[0353] In the specification, the quantum dots may be crystals of semiconductor compounds and may include any material capable of emitting light of various emission wavelengths according to the size of the crystals. By adjusting the ratio of elements in the quantum dot compound, the quantum dots can emit light of various emission wavelengths.

[0354] The diameter of the quantum dots may, for example, be in the range of about 1 nm to about 10 nm.

[0355] The quantum dots can be synthesized by a wet chemical process, a metalorganic chemical vapor deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, or any process similar thereto.

[0356] The wet chemical process is a method including mixing precursor materials with an organic solvent and growing quantum dot particle crystals. When the quantum dot particle crystals grow, the organic solvent naturally acts as a dispersant coordinated on the surface of the quantum dot particle crystals and controls the growth of the quantum dot particle crystals so that the growth of the quantum dot particle crystals can be controlled by a process that is less costly and easier to perform than vapor deposition methods (such as metalorganic chemical vapor deposition process or molecular beam epitaxy process).

[0357] The quantum dots may include II-VI group semiconductor compounds, III-V group semiconductor compounds, III-VI group semiconductor compounds, I-III-VI group semiconductor compounds, IV-VI group semiconductor compounds, Group IV elements or compounds, or any combination thereof.

[0358] Examples of II-VI group semiconductor compounds may include: binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe or MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe or MgZnS, etc.; quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe or HgZnSTe, etc.; or any combination thereof.

[0359] Examples of III-V group semiconductor compounds may include: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs or InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs or InPSb, etc.; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs or InAlPSb, etc.; or any combination thereof. In an embodiment, the III-V group semiconductor compound may further include a group II element. Examples of III-V group semiconductor compounds further including a group II element may include InZnP, InGaZnP and InAlZnP, etc.

[0360] Examples of III-VI group semiconductor compounds may include: binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3 or InTe, etc.; ternary compounds such as InGaS3 or InGaSe3, etc.; or any combination thereof.

[0361] Examples of group I-III-VI semiconductor compounds may include: ternary compounds such as AgInS, AgInS2, AgInSe2, AgGaS, AgGaS2, AgGaSe2, CuInS, CuInS2, CuInSe2, CuGaS2, CuGaSe2, CuGaO2, AgGaO2, or AgAlO2; ternary compounds such as AgInGaS2 or AgInGaSe2; or any combination thereof.

[0362] Examples of group IV-VI semiconductor compounds may include: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe, or SnPbSTe; or any combination thereof.

[0363] Examples of group IV elements or compounds may include: single-element materials such as Si or Ge; binary compounds such as SiC or SiGe; or any combination thereof.

[0364] Each element included in a multi-element compound (such as a binary compound, a ternary compound, and a quaternary compound) may be present in the particles at a uniform concentration or a non-uniform concentration. For example, the above formula refers to the type of elements included in the compound, where the ratio of the elements in the compound may be changed. For example, AgIn x Ga 1-x S2 (where x is a real number satisfying 0 < x < 1) may be AgInGaS2.

[0365] In an embodiment, the quantum dots may have a single structure in which the concentration of each element in the quantum dots is uniform, or the quantum dots may have a core-shell dual structure. In an embodiment, in the case where the quantum dots have a core-shell dual structure, the material included in the core and the material included in the shell may be different from each other.

[0366] The shell of the quantum dots can be used as a protective layer to prevent chemical denaturation of the core to maintain semiconductor properties, and / or can be used as a charging layer to impart electrophoretic properties to the quantum dots. The shell can be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the material present in the shell decreases towards the center of the core.

[0367] Examples of the shell of the quantum dots may include metal oxides, metalloid oxides, non-metal oxides, semiconductor compounds; or any combination thereof. Examples of the metal oxides, metalloid oxides or non-metal oxides may include: binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4 or NiO, etc.; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4, etc.; or any combination thereof. Examples of the semiconductor compounds may include Group II-VI semiconductor compounds, Group III-V semiconductor compounds, Group III-VI semiconductor compounds, Group I-III-VI semiconductor compounds, Group IV-VI semiconductor compounds or any combination thereof as described herein. Examples of the semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb or any combination thereof.

[0368] Each element included in the multi-element compound (such as binary compounds and ternary compounds) may exist in the particles at a uniform concentration or a non-uniform concentration. For example, the above formula refers to the type of elements included in the compound, and the ratio of the elements in the compound may be changed.

[0369] The full width at half maximum (FWHM) of the emission wavelength spectrum of the quantum dots may be less than or equal to about 45 nm. For example, the FWHM of the emission wavelength spectrum of the quantum dots may be less than or equal to about 40 nm. For example, the FWHM of the emission wavelength spectrum of the quantum dots may be less than or equal to about 30 nm. Within these ranges, the color purity and / or color reproducibility of the quantum dots may be improved. Since the light emitted by the quantum dots is emitted in all directions, a wide viewing angle may be improved.

[0370] The quantum dots may be in the form of spherical nanoparticles, cone nanoparticles, multi-arm nanoparticles, cube nanoparticles, nanotubes, nanowires, nanofibers or nanoplates, etc.

[0371] Since the band gap can be controlled by adjusting the size of the quantum dots or the ratio of the elements in the quantum dot compound, light of various wavelengths can be obtained from the emission layer containing the quantum dots. Accordingly, by using the quantum dots as described above (by using quantum dots of different sizes or by changing the ratio of the elements in the quantum dot compound), a light-emitting device that emits light of various wavelength bands can be realized. Specifically, the size of the quantum dots can be selected to emit red light, green light and / or blue light. The size of the quantum dots can be configured to emit white light by combining light of various colors.

[0372] [Electron transport region in the interlayer 130]

[0373] The electron transport region may have: a single-layer structure composed of a single layer (composed of a single material), a single-layer structure composed of a single layer containing multiple materials different from each other, or a multi-layer structure including multiple layers containing multiple materials different from each other.

[0374] The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0375] In an embodiment, the electron transport region may have an electron transport layer / electron injection layer structure, a hole blocking layer / electron transport layer / electron injection layer structure, an electron control layer / electron transport layer / electron injection layer structure, or a buffer layer / electron transport layer / electron injection layer structure, where the layers of each structure may be stacked from the emission layer in the order described for each, but the structure of the electron transport region is not limited thereto.

[0376] The electron transport region (e.g., the buffer layer, hole blocking layer, electron control layer, or electron transport layer in the electron transport region) may include a metal-free compound containing at least one nitrogen-containing C1-C 60 ring group lacking π electrons.

[0377] In an embodiment, the electron transport region may include a compound represented by Formula 601:

[0378] [Formula 601]

[0379] [Ar 601 xe11 -[(L 601 ) xe1 -R 601 xe21 。

[0380] In Formula 601,

[0381] Ar 601 and L 601 may each independently be an unsubstituted or at least one R 10a substituted C3-C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C1-C 60 heterocyclic group,

[0382] xe11 may be 1, 2, or 3,

[0383] xe1 may be 0, 1, 2, 3, 4, or 5,

[0384] R 601 may be unsubstituted or at least one R 10a ​​Substituted C3-C 60 carbocyclic group, unsubstituted or substituted by at least one R 10a Substituted C1-C 60 heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 )、-C(=O)(Q 601 )、-S(=O)2(Q 601 ) or -P(=O)(Q 601 )(Q 602 ),

[0385] Q 601 to Q 603 may each independently be the same as described for Q1,

[0386] xe21 can be 1, 2, 3, 4 or 5, and

[0387] Ar 601 , L 601 and R 601 in at least one of which may each independently be unsubstituted or substituted by at least one R 10a substituted π-deficient nitrogen-containing C1-C 60 cyclic group.

[0388] In an embodiment, in Formula 601, when xe11 is 2 or greater, two or more Ars 601 may be connected to each other by a single bond.

[0389] In an embodiment, in Formula 601, Ar 601 may be unsubstituted or substituted by at least one R 10a substituted anthryl group.

[0390] In an embodiment, the electron transport region may include a compound represented by Formula 601-1:

[0391] [Formula 601-1]

[0392]

[0393] In Formula 601-1,

[0394] X 614 may be N or C(R 614 ), X 615 may be N or C(R 615 ), X 616 may be N or C(R 616 ), and at least one of X 614 to X 616 may each be N,

[0395] L 611 to L 613 may each independently be the same as combined with L 601 described,

[0396] xe611 to xe613 may each independently be the same as combined with xe1 described,

[0397] R 611 to R 613 may each independently be the same as combined with R 601 described, and

[0398] R 614 to R 616 may each independently be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxy, cyano, nitro, C1-C 20 alkyl, C1-C 20 alkoxy, unsubstituted or substituted by at least one R 10a substituted C3-C 60 carbocyclic group or unsubstituted or substituted by at least one R 10a substituted C1-C 60 heterocyclic group.

[0399] In an embodiment, in Formula 601 and Formula 601-1, xe1 and xe611 to xe613 may each independently be 0, 1, or 2.

[0400] The electron transport region may include one of Compounds ET1 to ET47, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:

[0401]

[0402]

[0403]

[0404]

[0405] The thickness of the electron transport region may be in the range of about to about For example, the thickness of the electron transport region may be in the range of about to about In the case where the electron transport region includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or any combination thereof, the thickness of the buffer layer, the hole blocking layer, or the electron control layer may be in the range of about to about within a range. For example, the thickness of the buffer layer, hole blocking layer, or electron control layer can each independently be within about to about For example, the thickness of the electron transport layer can be within about to about For example, the thickness of the electron transport layer can be within about to about When the thicknesses of the buffer layer, hole blocking layer, electron control layer, electron transport layer, and / or electron transport region are within the above ranges, satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage.

[0406] In addition to the above materials, the electron transport region (e.g., the electron transport layer in the electron transport region) can further include a metal-containing material.

[0407] The metal-containing material can include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ions of the alkali metal complex can be Li ions, Na ions, K ions, Rb ions, or Cs ions, and the metal ions of the alkaline earth metal complex can be Be ions, Mg ions, Ca ions, Sr ions, or Ba ions. The ligands coordinated with the metal ions of the alkali metal complex or with the metal ions of the alkaline earth metal complex can each independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0408] In an embodiment, the metal-containing material can include a Li complex. The Li complex can include, for example, compound ET-D1(Liq) or compound ET-D2:

[0409]

[0410] The electron transport region can include an electron injection layer that facilitates the injection of electrons from the second electrode 150.

[0411] The electron injection layer can be in direct contact with the second electrode 150.

[0412] The electron injection layer can have: a single-layer structure composed of a single layer (composed of a single material), a single-layer structure composed of a single layer containing a plurality of different materials from each other, or a multilayer structure including a plurality of layers containing a plurality of different materials from each other.

[0413] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0414] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0415] The alkali metal compound, the alkaline earth metal compound, and the rare earth metal compound may include oxides, halides (e.g., fluorides, chlorides, bromides, iodides, etc.), or tellurides of the alkali metal, the alkaline earth metal, and the rare earth metal, or any combination thereof.

[0416] The alkali metal compound may include: alkali metal oxides, such as Li2O, Cs2O, or K2O, etc.; alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, or KI, etc.; or any combination thereof. The alkaline earth metal compound may include alkaline earth metal oxides, such as BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1) or Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1), etc. The rare earth metal compound may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In an embodiment, the rare earth metal compound may include lanthanide metal tellurides. Examples of lanthanide metal tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and Lu2Te3, etc.

[0417] The alkali metal complex, alkaline earth metal complex, and rare earth metal complex may include one of an alkali metal ion, an alkaline earth metal ion, and a rare earth metal ion, and a ligand bonded to the metal ion (e.g., hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof).

[0418] The electron injection layer may be composed of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof as described above. In an embodiment, the electron injection layer may further include an organic material (e.g., a compound represented by Formula 601).

[0419] In an embodiment, the electron injection layer may be composed of an alkali metal-containing compound (e.g., an alkali metal halide), or the electron injection layer may be composed of an alkali metal-containing compound (e.g., an alkali metal halide); and an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer, an RbI:Yb co-deposited layer, a LiF:Yb co-deposited layer, or the like.

[0420] When the electron injection layer further includes an organic material, an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof may be uniformly or non-uniformly dispersed in a matrix including the organic material.

[0421] The thickness of the electron injection layer may be in the range of about to about . For example, the thickness of the electron injection layer may be in the range of about to about . When the thickness of the electron injection layer is within the above range, satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0422] [Second Electrode 150]

[0423] The second electrode 150 may be disposed on the sandwich layer 130 having the structure as described above. The second electrode 150 may be a cathode serving as an electron injection electrode. The material for forming the second electrode 150 may be a material having a low work function, such as a metal, an alloy, a conductive compound, or any combination thereof.

[0424] The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 150 may be a transmissive electrode, a transmissive-reflective electrode, or a reflective electrode.

[0425] The second electrode 150 may have a single-layer structure or a multi-layer structure including multiple layers.

[0426] [Capping layer]

[0427] The light-emitting device 10 may include a first capping layer outside the first electrode 110 and / or a second capping layer outside the second electrode 150. For example, the light-emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the interlayer 130, and the second electrode 150 are stacked in this order, a structure in which the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are stacked in this order, or a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are stacked in this order.

[0428] The light generated in the emission layer in the interlayer 130 of the light-emitting device 10 may be extracted toward the outside through the first electrode 110, which may be a transmissive-reflective electrode or a transmissive electrode, and through the first capping layer. The light generated in the emission layer in the interlayer 130 of the light-emitting device 10 may be extracted toward the outside through the second electrode 150, which may be a transmissive-reflective electrode or a transmissive electrode, and through the second capping layer.

[0429] The first capping layer and the second capping layer may each increase the external emission efficiency according to the principle of constructive interference. Accordingly, the light extraction efficiency of the light-emitting device 10 may be increased, so that the light-emitting efficiency of the light-emitting device 10 may be improved.

[0430] The first capping layer and the second capping layer may each include a material having a refractive index greater than or equal to about 1.6 (relative to a wavelength of about 589 nm).

[0431] The first capping layer and the second capping layer may each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.

[0432] At least one of the first capping layer and the second capping layer may each independently include a carbocyclic compound, a heterocyclic compound, an amino group-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amino group-containing compound may optionally be substituted with substituents including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In an embodiment, at least one of the first capping layer and the second capping layer may each independently include an amino group-containing compound.

[0433] In an embodiment, at least one of the first capping layer and the second capping layer may each independently include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof.

[0434] In an embodiment, at least one of the first capping layer and the second capping layer may each independently include one of Compound HT28 to Compound HT33, one of Compound CP1 to Compound CP7, β-NPB, or any combination thereof:

[0435]

[0436]

[0437] [Electronic device]

[0438] The light-emitting device may be included in various electronic devices. In an embodiment, the electronic device including the light-emitting device may be a light-emitting device or an authentication device, etc.

[0439] In addition to the light-emitting device, the electronic device (e.g., a light-emitting device) may further include a color filter, a color conversion layer, or a color conversion unit (such as a color filter and a color conversion layer). The color filter and / or the color conversion layer may be disposed in at least one traveling direction of the light emitted from the light-emitting device. In an embodiment, the light emitted from the light-emitting device may be blue light or white light. The light-emitting device may be the same as the light-emitting device described herein. In an embodiment, the color conversion layer may include quantum dots. The quantum dots may be, for example, the quantum dots described herein.

[0440] The electronic device may include a first substrate. The first substrate may include a plurality of sub-pixel regions, the color filter may include a plurality of color filter regions respectively corresponding to the plurality of sub-pixel regions, and the color conversion layer may include a plurality of color conversion regions respectively corresponding to the plurality of sub-pixel regions.

[0441] The pixel defining film may be disposed between the plurality of sub-pixel regions to define each sub-pixel region.

[0442] The color filter may further include a plurality of color filter regions and a light-shielding pattern disposed between the plurality of color filter regions, and the color conversion layer may further include a plurality of color conversion regions and a light-shielding pattern disposed between the plurality of color conversion regions.

[0443] The color filter region (or color conversion region) may include: a first region that emits first color light; a second region that emits second color light; and / or a third region that emits third color light, where the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In an embodiment, the color filter region (or color conversion region) may include quantum dots. For example, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. The quantum dots may be quantum dots as described herein. The first region, the second region, and / or the third region may each further include a scatterer.

[0444] In an embodiment, the light-emitting device may emit first light, the first region may absorb the first light to emit first-1 color light, the second region may absorb the first light to emit second-1 color light, and the third region may absorb the first light to emit third-1 color light. The first-1 color light, the second-1 color light, and the third-1 color light may have different maximum emission wavelengths from each other. For example, the first light may be blue light, the first-1 color light may be red light, the second-1 color light may be green light, and the third-1 color light may be blue light.

[0445] In addition to the light-emitting device as described above, the electronic device may further include a thin-film transistor. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, where any one of the source electrode and the drain electrode may be electrically connected to any one of the first electrode and the second electrode of the light-emitting device.

[0446] The thin-film transistor may further include a gate electrode, a gate insulating film, and the like.

[0447] The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, an oxide semiconductor, and the like.

[0448] The electronic device may further include a sealing portion for sealing the light-emitting device. The sealing portion may be disposed between the color filter and / or the color conversion layer and the light-emitting device. The sealing portion may allow light to be extracted from the light-emitting device to the outside, and may simultaneously prevent environmental air and moisture from penetrating into the light-emitting device. The sealing portion may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer including an organic layer and / or an inorganic layer. In the case where the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0449] Depending on the use of the electronic device, various functional layers may be additionally disposed on the sealing portion in addition to the color filter and / or the color conversion layer. Examples of the functional layer may include a touch screen layer and a polarization layer, etc. The touch screen layer may be a pressure-sensitive touch screen layer, a capacitive touch screen layer, or an infrared touch screen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual by using biometric information of a living body (such as a fingertip, a pupil, etc.).

[0450] In addition to the light-emitting device as described above, the authentication device may further include a biometric information collector.

[0451] The electronic device can be applied to various displays, light sources, lighting devices, personal computers (such as mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, electronic game consoles, medical tools (such as electronic thermometers, sphygmomanometers, glucometers, pulse measurement devices, pulse wave measurement devices, electrocardiogram monitors, ultrasonic diagnostic devices, or endoscope monitors), fish finders, various measurement tools, instruments (such as instruments for vehicles, aircraft, and ships), and projectors, etc.

[0452] [Electronic equipment]

[0453] The light-emitting device may be included in various electronic equipment.

[0454] In an embodiment, the electronic equipment including the light-emitting device may be one of a flat panel display, a curved display, a computer monitor, a medical monitor, a television, a billboard, an indoor light, an outdoor light, a signal light, a head-up display, a fully transparent display, a partially transparent display, a flexible display, a rollable display, a foldable display, a stretchable display, a laser printer, a telephone, a mobile phone, a tablet computer, a phablet, a personal digital assistant (PDA), a wearable device, a laptop computer, a digital camera, a video camera, a viewfinder, a microdisplay, a three-dimensional (3D) display, a virtual reality display, an augmented reality display, a vehicle, a video wall with a plurality of displays spliced together, a theater screen, a stadium screen, a light therapy device, and a signboard.

[0455] The light-emitting device may have excellent luminous efficiency and long lifespan, and thus, the electronic equipment including the light-emitting device may have characteristics such as high brightness, high resolution, and low power consumption.

[0456] Figure 2 and Figure 3 description of]

[0457] Figure 2 and Figure 3 ​Each is a schematic cross-sectional view of a tandem light-emitting device 20 or a tandem light-emitting device 30 according to an embodiment. The tandem light-emitting device 20 or the tandem light-emitting device 30 may include a first electrode 110, an interlayer 130, and a second electrode 150.

[0458] Reference Figure 2 , the interlayer 130 of the tandem light-emitting device 20 may include m emission units, for example, the first to the mth emission units 145(1),... and 145(m), and m - 1 charge generation units disposed between adjacent emission units, for example, the first to the m - 1th charge generation units 144(1),... and 144(m - 1). m may be an integer of 2 or greater. For example, m may be an integer in the range of 2 to 10. For example, m may be an integer in the range of 2 to 6. For example, m may be an integer in the range of 2 to 4.

[0459] Among the m emission units, the mth emission unit close to the first electrode 110 may be the mth emission unit 145(m). For example, among the m emission units, the emission unit closest to the first electrode 110 may be the first emission unit 145(1), the emission unit farthest from the first electrode 110 (the emission unit adjacent to the second electrode 150) may be the mth emission unit 145(m), and the first emission unit 145(1) to the mth emission unit 145(m) may be arranged in sequence. For example, the m - 1th charge generation unit 144(m - 1) may be disposed between the m - 1th emission unit 145(m - 1) and the mth emission unit 145(m).

[0460] In an embodiment, at least one of the m emission units may emit blue light having a maximum emission wavelength in the range of about 410 nm to about 490 nm. In an embodiment, at least one of the m emission units may emit green light having a maximum emission wavelength in the range of about 490 nm to about 580 nm.

[0461] In an embodiment, each of the m emission units may include an emission layer, a hole transport region, and an electron transport region. The hole transport region may include at least one of a hole injection layer, a hole transport layer, a buffer layer, an emission assist layer, and an electron blocking layer, and the electron transport region may include at least one of a hole blocking layer, an electron transport layer, and an electron injection layer. Figure 2 The emission layer, hole transport region, and electron transport region in each of the m emission units of the tandem light-emitting device 20 may be the same as Figure 1 the emission layer, hole transport region, and electron transport region of the light-emitting device 10.

[0462] In an embodiment, each of the m - 1 charge generation units may include a p-type charge generation layer and an n-type charge generation layer.

[0463] In an embodiment, the light-emitting device may include a first pixel emitting first light, a second pixel emitting second light, and a third pixel emitting third light, and the hole transport region of the first emission unit may include a hole injection layer and a hole transport layer. In this regard, the hole mobility of the hole transport layer may be greater than the hole mobility of the hole injection layer, and the light-emitting device may have a CCT in the range of 0 to 5 represented by Equation 1 above.

[0464] In an embodiment, the light-emitting device may include a first pixel emitting first light, a second pixel emitting second light, and a third pixel emitting third light, and the hole transport region of each of the second to mth emission units may include a hole transport layer. In this regard, the hole mobility of the hole transport layer of each of the second to mth emission units may be greater than the hole mobility of the p-type charge generation layer of each of the first to (m - 1)th charge generation units adjacent to the hole transport layer, and the light-emitting device may have a CCT in the range of 0 to 5 represented by Equation 1 above.

[0465] In an embodiment, the light-emitting device may include a first pixel emitting first light, a second pixel emitting second light, and a third pixel emitting third light, the hole transport region of the first emission unit may include a hole injection layer and a hole transport layer, and the hole transport region of each of the second to mth emission units may include a hole transport layer. In this regard, the hole mobility of the hole transport layer of the first emission unit may be greater than the hole mobility of the hole injection layer of the first emission unit, the hole mobility of the hole transport layer of each of the second to mth emission units may be greater than the hole mobility of the p-type charge generation layer of each of the first to (m - 1)th charge generation units adjacent to the hole transport layer, and the light-emitting device may have a CCT in the range of 0 to 5 represented by Equation 1 above.

[0466] The light-emitting device including m emission units may include a color conversion unit, such as a color conversion layer and / or a color filter, and the first pixel, the second pixel, and the third pixel may be distinguished by the color conversion unit.

[0467] In an embodiment, when m is 2, the first electrode, the first emission unit, the first charge generation unit, and the second emission unit may be arranged in the recited order. In this regard, the first emission unit may emit first color light, the second emission unit may emit second color light, and the maximum emission wavelength of the first color light and the maximum emission wavelength of the second color light may be the same as or different from each other.

[0468] In an embodiment, when m is 3, the first electrode, the first emission unit, the first charge generation unit, the second emission unit, the second charge generation unit, and the third emission unit may be arranged in the recited order. In this regard, the first emission unit may emit first color light, the second emission unit may emit second color light, the third emission unit may emit third color light, and the maximum emission wavelengths of the first color light, the second color light, and the third color light may be the same as or different from each other.

[0469] In an embodiment, when m is 4, the first electrode, the first emission unit, the first charge generation unit, the second emission unit, the second charge generation unit, the third emission unit, the third charge generation unit, and the fourth emission unit may be arranged in the recited order. In this regard, the first emission unit may emit first color light, the second emission unit may emit second color light, the third emission unit may emit third color light, the fourth emission unit may emit fourth color light, and the maximum emission wavelengths of the first color light, the second color light, the third color light, and the fourth color light may be the same as or different from each other.

[0470] In an embodiment, the maximum emission wavelength of light emitted from at least one of the m emission units may be different from the maximum emission wavelength of light emitted from at least one of the remaining emission units.

[0471] Figure 3 Shown Figure 2 is the tandem light-emitting device 30 in the embodiment where m is 4 in the light-emitting device. Refer to Figure 3 , the tandem light-emitting device 30 may include three charge generation units (e.g., the first to third charge generation units 144(1), 144(2), and 144(3)) between four emission units (e.g., the first to fourth emission units 145(1), 145(2), 145(3), and 145(4)).

[0472] In an embodiment, the first emission unit 145(1) may include a first emission layer, the second emission unit 145(2) may include a second emission layer, the third emission unit 145(3) may include a third emission layer, the fourth emission unit 145(4) may include a fourth emission layer, each of the first emission layer, the second emission layer, and the third emission layer may emit blue light, and the fourth emission layer may emit green light.

[0473] In an embodiment, each of the first emission unit 145(1) to the fourth emission unit 145(4) may include a hole transport region between the first electrode 110 and each of the first emission layer to the fourth emission layer. The hole transport region may be the same as the hole transport region described herein.

[0474] Figure 4 and Figure 5 description of

[0475] Figure 4 is a schematic cross-sectional view of a light-emitting device according to an embodiment.

[0476] The light-emitting device according to the embodiment may include a substrate 100, a thin-film transistor (TFT), a light-emitting device, and a sealing portion 300 for sealing the light-emitting device.

[0477] The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be disposed on the substrate 100. The buffer layer 210 may prevent penetration of impurities through the substrate 100 and may provide a flat surface on the substrate 100.

[0478] The TFT may be disposed on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0479] The active layer 220 may include an inorganic semiconductor (such as silicon or polysilicon), an organic semiconductor, or an oxide semiconductor, and may include a source region, a drain region, and a channel region.

[0480] A gate insulating film 230 for insulating the active layer 220 from the gate electrode 240 may be disposed on the active layer 220, and the gate electrode 240 may be disposed on the gate insulating film 230.

[0481] An interlayer insulating film 250 may be disposed on the gate electrode 240. The interlayer insulating film 250 may be disposed between the gate electrode 240 and the source electrode 260 to insulate the gate electrode 240 from the source electrode 260, and may be disposed between the gate electrode 240 and the drain electrode 270 to insulate the gate electrode 240 from the drain electrode 270.

[0482] The source electrode 260 and the drain electrode 270 may be disposed on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source region and the drain region of the active layer 220, and the source electrode 260 and the drain electrode 270 may respectively contact the exposed portions of the source region and the drain region of the active layer 220.

[0483] The TFT may be electrically connected to the light-emitting device to drive the light-emitting device, and may be covered and protected by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or any combination thereof. The light-emitting device may be provided on the passivation layer 280. The light-emitting device may include a first electrode 110, an interlayer 130, and a second electrode 150.

[0484] ​The first electrode 110 may be disposed on the passivation layer 280. The passivation layer 280 may not completely cover the drain electrode 270 and may expose a part of the drain electrode 270. The first electrode 110 may be electrically connected to the exposed portion of the drain electrode 270.

[0485] The pixel defining film 290 including an insulating material may be disposed on the first electrode 110. The pixel defining film 290 may expose a region of the first electrode 110, and the interlayer 130 may be formed in the exposed region of the first electrode 110. The pixel defining film 290 may be a polyimide-based organic film or a polyacrylic acid-based organic film. Although not shown in Figure 4 , at least some layers of the interlayer 130 may extend beyond the upper portion of the pixel defining film 290 and be disposed in the form of a common layer.

[0486] The second electrode 150 may be disposed on the interlayer 130, and the capping layer 170 may be additionally formed on the second electrode 150. The capping layer 170 may be formed to cover the second electrode 150.

[0487] The sealing part 300 may be disposed on the capping layer 170. The sealing part 300 may be disposed on the light-emitting device to protect the light-emitting device from moisture and / or oxygen. The sealing part 300 may include: an inorganic film including silicon nitride (SiN x ), silicon oxide (SiO x ), indium tin oxide, indium zinc oxide, or any combination thereof; an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resin (e.g., aliphatic glycidyl ether (AGE), etc.), or any combination thereof; or any combination of an inorganic film and an organic film.

[0488] Figure 5 is a schematic cross-sectional view of a light-emitting device according to another embodiment.

[0489] Figure 5 The light-emitting device of Figure 4 may be different from the light-emitting device of Figure 5 at least in that a light-shielding pattern 500 and a functional region 400 are additionally disposed on the sealing part 300. The functional region 400 may be a color filter region, a color conversion region, or a color conversion unit (such as a combination of a color filter region and a color conversion region). In an embodiment,

[0490] Figure 6 description of

[0491] Figure 6 ​FIG. 0 is a schematic perspective view of an electronic device 1 including a light-emitting device according to an embodiment. The electronic device 1 as a device for displaying moving images or still images may be a portable electronic device such as a mobile phone, a smart phone, a tablet personal computer (PC), a mobile communication terminal, an electronic notebook computer, an e-book, a portable multimedia player (PMP), a navigation device, or a ultra-mobile personal computer (UMPC), and various products such as a television, a laptop computer, a monitor, a billboard, or an Internet of Things (IoT) device. The electronic device 1 may be such a product or a part thereof. The electronic device 1 may be a wearable device such as a smart watch, a watch phone, a glasses-type display, or a head-mounted display (HMD), or a part of a wearable device. However, the embodiment is not limited thereto. For example, the electronic device 1 may include an instrument panel of a vehicle, a center console of the vehicle, a center information display disposed on the instrument panel of the vehicle, an in-vehicle rearview mirror display replacing a side view mirror of the vehicle, an entertainment display for a rear seat of the vehicle, or a display disposed on the backrest of a front seat, a head-up display (HUD) mounted in front of the vehicle or projected on a windshield, or a computer-generated hologram augmented reality head-up display (CGH ARHUD). Figure 6 An embodiment in which the electronic device 1 is a smart phone is illustrated.

[0492] The electronic device 1 may include a display area DA and a non-display area NDA outside the display area DA. The display device may implement an image through a plurality of two-dimensional pixel arrays disposed in the display area DA.

[0493] The non-display area NDA may be an area where no image is displayed and may surround the display area DA. On the non-display area NDA, a driver for supplying an electrical signal or power to a display element disposed in the display area DA may be disposed. On the non-display area NDA, pads to which electronic components or a printed circuit board may be electrically connected may be disposed.

[0494] In the electronic device 1, the length in the x-axis direction and the length in the y-axis direction may be different from each other. In an embodiment, as Figure 6 shown, the length in the x-axis direction may be less than the length in the y-axis direction. In an embodiment, the length in the x-axis direction may be the same as the length in the y-axis direction. In an embodiment, the length in the x-axis direction may be greater than the length in the y-axis direction.

[0495] Figure 7 and Figures 8A to 8C description of

[0496] Figure 7 FIG. 24 is a perspective view of the exterior of a vehicle 1000 as an electronic device including a light-emitting device according to an embodiment. Figures 8A to 8C ​Respectively are schematic views of the interior of the vehicle 1000 according to the embodiments.

[0497] Reference Figure 7 、 Figure 8A 、 Figure 8B And Figure 8C , the vehicle 1000 may refer to various devices for moving an object to be transported (such as a person, an object or an animal) from a starting point to a destination point. Examples of the vehicle 1000 may include vehicles traveling on roads or tracks, ships moving on the sea or rivers, and airplanes flying in the air by the action of air, etc.

[0498] The vehicle 1000 may travel on a road or a track. The vehicle 1000 may move in a given direction according to the rotation of at least one wheel. Examples of the vehicle 1000 may include three-wheeled vehicles or four-wheeled vehicles, construction machinery, two-wheeled vehicles, prime movers, bicycles, and trains traveling on tracks.

[0499] The vehicle 1000 may include a body having an interior and an exterior, and a chassis as a part outside the body in which mechanical equipment for driving is installed. The exterior of the body may include a front panel, a hood, a roof panel, a rear panel, a trunk, and pillars provided at the boundaries between the doors, etc. The chassis of the vehicle 1000 may include a power generation device, a power transmission device, a driving device, a steering device, a braking device, a suspension device, a transmission device, a fuel device, front and rear wheels, and left and right wheels, etc.

[0500] The vehicle 1000 may include side window glasses 1100, a front window glass 1200, side mirrors 1300, an instrument panel 1400, a center console 1500, a passenger seat instrument panel 1600, and a display device 2.

[0501] The side window glasses 1100 and the front window glass 1200 may be divided by pillars arranged between the side window glasses 1100 and the front window glass 1200.

[0502] The side window glasses 1100 may be installed on the sides of the vehicle 1000. In an embodiment, the side window glasses 1100 may be installed in the doors of the vehicle 1000. A plurality of side window glasses 1100 may be provided and may face each other. In an embodiment, the side window glasses 1100 may include a first side window glass 1110 and a second side window glass 1120. In an embodiment, the first side window glass 1110 may be arranged adjacent to the instrument panel 1400. The second side window glass 1120 may be arranged adjacent to the passenger seat instrument panel 1600.

[0503] In an embodiment, the side window glasses 1100 may be spaced apart from each other in the x-axis direction or in a direction opposite to the x-axis. In an embodiment, the first side window glass 1110 and the second side window glass 1120 may be spaced apart from each other in the x-axis direction or in a direction opposite to the x-axis. For example, an imaginary straight line L connecting the side window glasses 1100 may extend in the x-axis direction or in a direction opposite to the x-axis. In an embodiment, an imaginary straight line L connecting the first side window glass 1110 and the second side window glass 1120 may extend in the x-axis direction or in a direction opposite to the x-axis.

[0504] The front window glass 1200 may be installed in front of the vehicle 1000. The front window glass 1200 may be disposed between the side window glasses 1100 facing each other.

[0505] The side mirror 1300 may provide a view of the rear of the vehicle 1000. The side mirror 1300 may be installed on the exterior of the vehicle body. In an embodiment, a plurality of side mirrors 1300 may be provided. One of the plurality of side mirrors 1300 may be disposed outside the first side window glass 1110. Another one of the plurality of side mirrors 1300 may be disposed outside the second side window glass 1120.

[0506] The instrument panel 1400 may be disposed in front of the steering wheel. The instrument panel 1400 may include a tachometer, a speedometer, a coolant thermometer, an oil gauge, a turn signal indicator, a high beam indicator, a warning light, a seat belt warning light, an odometer, a speedometer, an automatic shift selector indicator, a door open warning light, an oil warning light, and / or a low fuel warning light.

[0507] The center console 1500 may include a control panel on which a plurality of buttons for adjusting an audio device, an air conditioning device, and a seat heater are disposed. The center console 1500 may be disposed on one side of the instrument panel 1400.

[0508] The passenger seat instrument panel 1600 may be spaced apart from the instrument panel 1400, and the center console 1500 is disposed therebetween. In an embodiment, the instrument panel 1400 may be disposed corresponding to the driver's seat (not shown), and the passenger seat instrument panel 1600 may be disposed corresponding to the passenger seat (not shown). In an embodiment, the instrument panel 1400 may be adjacent to the first side window glass 1110, and the passenger seat instrument panel 1600 may be adjacent to the second side window glass 1120.

[0509] In an embodiment, the display device 2 may include a display panel 3, and the display panel 3 may display an image. The display device 2 may be disposed inside the vehicle 1000. In an embodiment, the display device 2 may be disposed between the side window glasses 1100 facing each other. The display device 2 may be disposed in at least one of the instrument panel 1400, the center console 1500, and the passenger seat instrument panel 1600.

[0510] The display device 2 may include an organic light-emitting display device, an inorganic light-emitting display device, a quantum dot display device, or the like. Hereinafter, as the display device 2 according to an embodiment, an organic light-emitting display device including a light-emitting device according to the present disclosure will be described as an example, but various types of display devices as described herein may be used in the embodiment.

[0511] Reference Figure 8A , the display device 2 may be disposed in the center console 1500. In an embodiment, the display device 2 may display navigation information. In an embodiment, the display device 2 may display information regarding audio settings, video settings, or vehicle settings.

[0512] Reference Figure 8B , the display device 2 may be disposed in the instrument panel 1400. The instrument panel 1400 may display driving information and the like through the display device 2. For example, the instrument panel 1400 may implement driving information digitally. The instrument panel 1400 may digitally display vehicle information and driving information as images. For example, the pointer and meter of the tachometer and various warning lights or icons may be displayed through digital signals.

[0513] Reference Figure 8C , the display device 2 may be disposed in the passenger seat instrument panel 1600. The display device 2 may be embedded in the passenger seat instrument panel 1600 or disposed on the passenger seat instrument panel 1600. In an embodiment, the display device 2 disposed on the passenger seat instrument panel 1600 may display an image related to the information displayed on the instrument panel 1400 and / or the information displayed on the center console 1500. In an embodiment, the display device 2 disposed on the passenger seat instrument panel 1600 may display information different from the information displayed on the instrument panel 1400 and / or the information displayed on the center console 1500.

[0514] [Manufacturing Method]

[0515] The layer constituting the hole transport region, the emission layer, and the layer constituting the electron transport region may be formed in a selected region by using various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, and laser-induced thermal imaging.

[0516] In the case of forming the layer constituting the hole transport region, the emission layer, and the layer constituting the electron transport region by vacuum deposition, the deposition temperature may be in the range of about 100°C to about 500°C, the degree of vacuum may be in the range of about 10 -8 Torr to about 10 -3 Torr, and in about / second to about Deposition is carried out at a deposition rate in the range of / second, which depends on the material included in the layer to be formed and the structure of the layer to be formed.

[0517] [Definition of terms]

[0518] As used herein, the term "C3-C 60 carbocyclic group" may be a cyclic group consisting only of carbon atoms as ring-forming atoms and having 3 to 60 carbon atoms. For example, C3-C 50 carbocyclic group, C3-C 40 carbocyclic group, C3-C 30 carbocyclic group, C3-C 20 carbocyclic group or C3-C 10 carbocyclic group, and as used herein, the term "C1-C 60 heterocyclic group" may be a cyclic group having 1 to 60 carbon atoms and further having at least one heteroatom as a ring-forming atom in addition to carbon atoms. For example, C1-C 50 heterocyclic group, C1-C 40 heterocyclic group, C1-C 30 heterocyclic group, C1-C 20 heterocyclic group or C1-C 10 heterocyclic group. C3-C 60 carbocyclic group and C1-C 60 heterocyclic group may each be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are fused to each other. For example, the number of ring-forming atoms of C1-C 60 heterocyclic group may be in the range of 3 to 61.

[0519] As used herein, the term "cyclic group" may be C3-C 60 carbocyclic group or C1-C 60 heterocyclic group.

[0520] As used herein, the term "π-electron-rich C3-C 60 cyclic group" may be a cyclic group having 3 to 60 carbon atoms and may not include *-N=*' as a ring-forming moiety, and as used herein, the term "π-electron-deficient nitrogen-containing C1-C 60 cyclic group" may be a heterocyclic group having 1 to 60 carbon atoms and may include *-N=*' as a ring-forming moiety.

[0521] In an embodiment,

[0522] C3-C 60The carbocyclic group may be a T1 group, or a group in which two or more T1 groups are fused to each other (e.g., cyclopentadienyl, adamantyl, norbornyl, phenyl, pentaphenylenyl, naphthyl, azulyl, indacenyl, acenaphthylenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, triphenylenyl, pyrenyl, 1,2-benzophenanthryl, perylenyl, pentaphenylene, heptaphenylenyl, tetracenyl, picenyl, hexacenyl, pentacenyl, rubicenyl, coronenyl, ovalenyl, indenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, indenophenanthryl or indenanthryl),

[0523] C1-C 60 The heterocyclic group may be a T2 group, a group in which two or more T2 groups are fused to each other, or a group in which at least one T2 group and at least one T1 group are fused to each other (e.g., pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthylindolyl, isoindolyl, benzisoindolyl, naphthylisoindolyl, benzothienyl, benzothiophenyl, benzofuranyl, carbazolyl, dibenzothienyl, dibenzothiophenyl, dibenzofuranyl, indencarbazolyl, indolocarbazolyl, benzofurancarbazolyl, benzothiophencarbazolyl, benzothienylcarbazolyl, benzindolocarbazolyl, benzocarbazolyl, benzonaphthofuranyl, benzonaphthothiophenyl, benzonaphthothienyl, benzofurandibenzofuranyl, benzofurandibenzothiophenyl, benzothiophendibenzothiophenyl, pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzisoxazolyl, benzothiazolyl, benzisothiazolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cinnolinyl, phthalazinyl, naphthyridinyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafuranyl, azadibenzothienyl, azadibenzothiophenyl, azadibenzofuranyl, etc.),

[0524] The π-electron rich C3-C 60 The cyclic group may be a T1 group, a group in which two or more T1 groups are fused to each other, a T3 group, a group in which two or more T3 groups are fused to each other, or a group in which at least one T3 group and at least one T1 group are fused to each other (e.g., C3-C 60carbocyclic group, 1H-pyrrolyl group, silyl group, borole group, 2H-pyrrolyl group, 3H-pyrrolyl group, thiophenyl group, furyl group, indolyl group, benzindolyl group, naphthylindolyl group, isoindolyl group, benzisoindolyl group, naphthobenzisoindolyl group, benzosilyl group, benzothiophenyl group, benzofuryl group, carbazolyl group, dibenzosilyl group, dibenzothiophenyl group, dibenzofuryl group, indolocarbazolyl group, indolocarbazolyl group, benzofurocarbazolyl group, benzothienocarbazolyl group, benzosilynocarbazolyl group, benzindolocarbazolyl group, benzocarbazolyl group, benzonaphthofuryl group, benzonaphthothiophenyl group, benzonaphthosilyl group, benzofurodibenzofuryl group, benzofurodibenzothiophenyl group, benzothienodibenzothiophenyl group, etc.),

[0525] π-electron-deficient nitrogen-containing C1-C 60 The cyclic group may be a T4 group, a group in which two or more T4 groups are fused to each other, a group in which at least one T4 group and at least one T1 group are fused to each other, a group in which at least one T4 group and at least one T3 group are fused to each other, or a group in which at least one T4 group, at least one T1 group, and at least one T3 group are fused to each other (e.g., pyrazolyl group, imidazolyl group, triazolyl group, oxazolyl group, isoxazolyl group, oxadiazolyl group, thiazolyl group, isothiazolyl group, thiadiazolyl group, benzopyrazolyl group, benzimidazolyl group, benzoxazolyl group, benzisoxazolyl group, benzothiazolyl group, benzisothiazolyl group, pyridyl group, pyrimidinyl group, pyrazinyl group, pyridazinyl group, triazinyl group, quinolinyl group, isoquinolinyl group, benzoquinolinyl group, benzoisoquinolinyl group, quinoxalinyl group, benzoquinoxalinyl group, quinazolinyl group, benzoquinazolinyl group, phenanthrolinyl group, cinnolinyl group, phthalazinyl group, naphthyridinyl group, imidazopyridyl group, imidazopyrimidinyl group, imidazotriazinyl group, imidazopyrazinyl group, imidazopyridazinyl group, azacarbazolyl group, azafuryl group, azadibenzosilyl group, azadibenzothiophenyl group, azadibenzofuryl group, etc.),

[0526] wherein the T1 group may be cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclobutenyl group, cyclopentenyl group, cyclopentadienyl group, cyclohexenyl group, cyclohexadienyl group, cycloheptenyl group, adamantyl group, norbornyl group (or bicyclo[2.2.1]heptyl group), norbornenyl group, bicyclo[1.1.1]pentyl group, bicyclo[2.1.1]hexyl group, bicyclo[2.2.2]octyl group or phenyl group,

[0527] The T2 group may be a furyl group, a thienyl group, a 1H-pyrrolyl group, a silolyl group, a borolyl group, a 2H-pyrrolyl group, a 3H-pyrrolyl group, an imidazolyl group, a pyrazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, an oxadiazolyl group, a thiazolyl group, an isothiazolyl group, a thiadiazolyl group, an aza-silolyl group, an aza-borolyl group, a pyridyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a tetrazinyl group, a pyrrolidinyl group, an imidazolidinyl group, a dihydropyrrolyl group, a piperidinyl group, a tetrahydropyridyl group, a dihydropyridyl group, a hexahydropyrimidinyl group, a tetrahydropyrimidinyl group, a dihydropyrimidinyl group, a piperazinyl group, a tetrahydropyrazinyl group, a dihydropyrazinyl group, a tetrahydropyridazinyl group or a dihydropyridazinyl group,

[0528] The T3 group may be a furyl group, a thienyl group, a 1H-pyrrolyl group, a silolyl group or a borolyl group, and

[0529] The T4 group may be a 2H-pyrrolyl group, a 3H-pyrrolyl group, an imidazolyl group, a pyrazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, an oxadiazolyl group, a thiazolyl group, an isothiazolyl group, a thiadiazolyl group, an aza-silolyl group, an aza-borolyl group, a pyridyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group or a tetrazinyl group.

[0530] As used herein, the terms "cyclic group", "C3-C 60 carbocyclic group", "C1-C 60 heterocyclic group", "π-electron-rich C3-C 60 cyclic group" or "nitrogen-containing π-electron-deficient C1-C 60 cyclic group" may each be a group fused with any cyclic group, monovalent group or polyvalent group (e.g., divalent group, trivalent group, tetravalent group, etc.) according to the structure of the formula using the corresponding term. In an embodiment, "phenyl" may be a benzo group, a phenyl group or a phenylene group, etc., which can be easily understood by those of ordinary skill in the art according to the structure of the formula including "phenyl".

[0531] Monovalent C3-C 60 carbocyclic group and monovalent C1-C 60 heterocyclic group examples may include C3-C 10 cycloalkyl group, C1-C 10 heterocycloalkyl group, C3-C 10 cycloalkenyl group, C1-C 10 heterocycloalkenyl group, C6-C 60 aryl group, C1-C 60 heteroaryl group, monovalent non-aromatic fused polycyclic group and monovalent non-aromatic fused heteropolycyclic group. Divalent C3-C 60 carbocyclic group and divalent C1-C 60 heterocyclic group examples may include C3-C 10 subcycloalkyl group, C1-C 10 subheterocycloalkyl group, C3-C10 Subcycloalkenyl, C1-C 10 Subheterocycloalkenyl, C6-C 60 Subaryl, C1-C 60 Subheteroaryl, divalent non-aromatic fused polycyclic group and divalent non-aromatic fused heteropolycyclic group.

[0532] As used herein, the term "C1-C 60 alkyl" may be a straight-chain or branched-chain aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, for example, C1-C 50 alkyl, C1-C 30 alkyl, C1-C 20 alkyl or C1-C 10 alkyl, and examples thereof may include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl and tert-decyl, etc. As used herein, the term "C1-C 60 alkylene" may be a divalent group having the same structure as C1-C 60 alkyl.

[0533] As used herein, the term "C2-C 60 alkenyl" may be a monovalent hydrocarbon group having at least one carbon-carbon double bond in the middle or at the end of C2-C 60 alkyl, for example, C2-C 30 alkenyl, C2-C 20 alkenyl or C2-C 10 alkenyl, and examples thereof may include vinyl, propenyl and butenyl, etc. As used herein, the term "C2-C 60 alkenylene" may be a divalent group having the same structure as C2-C 60 alkenyl.

[0534] As used herein, the term "C2-C 60 alkynyl" may be a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the middle or at the end of C2-C 60 alkyl, for example, C2-C 30 alkynyl, C2-C 20 alkynyl or C2-C 10 alkynyl, and examples thereof may include ethynyl and propynyl, etc. As used herein, the term "C2-C 60 alkynylene" may be a divalent group having the same structure as C2-C 60 alkynyl.

[0535] As used herein, the term "C1-C 60 alkoxy" may be a monovalent group represented by -O(A 101 )(where A 101 may be C1-C 60 alkyl), for example, C1-C 30 alkoxy, C1-C 20 alkoxy or C1-C 10 alkoxy, and examples thereof may include methoxy, ethoxy, and isopropoxy, etc.

[0536] As used herein, the term "C3-C 10 cycloalkyl" may be a monovalent saturated hydrocarbon ring group having 3 to 10 carbon atoms, and examples thereof may include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, and bicyclo[2.2.2]octyl, etc. As used herein, the term "C3-C 10 subcycloalkyl" may be a divalent group having the same structure as C3-C 10 cycloalkyl.

[0537] As used herein, the term "C1-C 10 heterocycloalkyl" may be a monovalent cyclic group having 1 to 10 carbon atoms that further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms, and examples thereof may include 1,2,3,4-oxadiazolyl, tetrahydrofuryl, and tetrahydrothienyl, etc. As used herein, the term "C1-C 10 subheterocycloalkyl" may be a divalent group having the same structure as C1-C 10 heterocycloalkyl.

[0538] As used herein, the term "C3-C 10 cycloalkenyl" may be a monovalent cyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring and having no aromaticity, and examples thereof may include cyclopentenyl, cyclohexenyl, and cycloheptenyl, etc. As used herein, the term "C3-C 10 subcycloalkenyl" may be a divalent group having the same structure as C3-C 10 cycloalkenyl.

[0539] As used herein, the term "C1-C 10 heterocycloalkenyl" may be a monovalent cyclic group having 1 to 10 carbon atoms that further includes at least one heteroatom as a ring-forming atom in its ring structure and having at least one double bond. C1-C 10Examples of heterocyclenyl may include 4,5-dihydro-1,2,3,4-oxatriazolyl, 2,3-dihydrofuranyl, 2,3-dihydrothienyl, etc. As used herein, the term "C1-C 10 heterocyclenylene" may be a divalent group having the same structure as C1-C 10 heterocyclenyl.

[0540] As used herein, the term "C6-C 60 aryl" may be a monovalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms. For example, C6-C 50 aryl, C6-C 40 aryl, C6-C 30 aryl, C6-C 20 aryl, or C6-C 15 aryl. And as used herein, the term "C6-C 60 arylene" may be a divalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms. Examples of C6-C 60 aryl may include phenyl, pentaphenylenyl, naphthyl, azulyl, indacenyl, acenaphthylenyl, phenalenyl, phenanthrenyl, anthracenyl, fluoranthenyl, triphenylenyl, pyrenyl, 1,2-benzophenanthrenyl, perylenyl, pentaphenyl, heptaphenylenyl, tetracenyl, picenyl, hexaphenyl, pentaphenyl, rubicenyl, coronenyl, ovalenyl, etc. In the case where C6-C 60 aryl and C6-C 60 arylene each include two or more rings, each of the two or more rings may be fused to each other.

[0541] As used herein, the term "C1-C 60 heteroaryl" may be a monovalent group of a heteroaromatic system having 1 to 60 carbon atoms that further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms. For example, C1-C 50 heteroaryl, C1-C 40 heteroaryl, C1-C 30 heteroaryl, C1-C 20 heteroaryl, or C1-C 10 heteroaryl. As used herein, the term "C1-C 60 heteroarylene" may be a divalent group of a heteroaromatic system having 1 to 60 carbon atoms that further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms. Examples of C1-C 60 heteroaryl may include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzoquinolinyl, isoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, cinnolinyl, phenanthrolinyl, phthalazinyl, naphthyridinyl, etc. In the case where C1-C 60 heteroaryl and C1-C60 When each of the heteroarylene groups includes two or more rings, the respective rings in the two or more rings may be fused to each other.

[0542] As used herein, the term "monovalent non-aromatic fused polycyclic group" may be a monovalent group having two or more rings fused to each other, with only carbon atoms as ring-forming atoms and having no aromaticity in its entire molecular structure (e.g., having 8 to 60 carbon atoms), e.g., C8-C 60 monovalent non-aromatic fused polycyclic group, C8-C 50 monovalent non-aromatic fused polycyclic group, C8-C 40 monovalent non-aromatic fused polycyclic group, C8-C 30 monovalent non-aromatic fused polycyclic group or C8-C 20 monovalent non-aromatic fused polycyclic group. Examples of the monovalent non-aromatic fused polycyclic group may include indenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, indenoanthracenyl, indenoanthracenyl, etc. As used herein, the term "divalent non-aromatic fused polycyclic group" may be a divalent group having the same structure as the monovalent non-aromatic fused polycyclic group.

[0543] As used herein, the term "monovalent non-aromatic fused heteropolycyclic group" may be a monovalent group having two or more rings fused to each other, further including at least one heteroatom as a ring-forming atom in addition to carbon atoms and having no aromaticity in its entire molecular structure (e.g., having 1 to 60 carbon atoms), e.g., C1-C 60 monovalent non-aromatic fused heteropolycyclic group, C1-C 50 monovalent non-aromatic fused heteropolycyclic group, C1-C 40 monovalent non-aromatic fused heteropolycyclic group, C1-C 30 monovalent non-aromatic fused heteropolycyclic group or C1-C 20Monovalent non-aromatic fused heteropolycyclic group. Examples of monovalent non-aromatic fused heteropolycyclic groups may include pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthylindolyl, isoindolyl, benzisoindolyl, naphthylisoindolyl, benzosilolyl, benzothienyl, benzofuryl, carbazolyl, dibenzosilolyl, dibenzothienyl, dibenzofuryl, azacarbazolyl, azafuryl, azadibenzosilolyl, azadibenzothienyl, azadibenzofuryl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, oxadiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzothiazolyl, benzoxadiazolyl, benzothiadiazolyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indolocarbazolyl, indolocarbazolyl, benzofurocarbazolyl, benzothienocarbazolyl, benzosilolocarbazolyl, benzindolocarbazolyl, benzocarbazolyl, benzonaphthofuryl, benzonaphthothienyl, benzonaphthosilolyl, benzofurodibenzofuryl, benzofurodibenzothienyl, and benzothienodibenzothienyl, etc. As used herein, the term "divalent non-aromatic fused heteropolycyclic group" may be a divalent group having the same structure as the monovalent non-aromatic fused heteropolycyclic group.

[0544] As used herein, the term "C6-C 60 aryloxy" may be a group represented by -O(A 102 )(where A 102 may be C6-C 60 aryl), for example, C6-C 50 aryloxy, C6-C 40 aryloxy, C6-C 30 aryloxy, C6-C 20 aryloxy or C6-C 15 aryloxy, and as used herein, the term "C6-C 60 arylthio" may be a group represented by -S(A 103 )(where A 103 may be C6-C 60 aryl), for example, C6-C 50 arylthio, C6-C 40 arylthio, C6-C 30 arylthio, C6-C 20 arylthio or C6-C 15 arylthio.

[0545] As used herein, the term "C7-C 60 arylalkyl" may be represented by -(A 104 )(A 105 (where A 104 may be C1-C54 an alkylene group, and A 105 may be C6-C 59 a group represented by aryl), for example, C7-C 50 aralkyl, C7-C 40 aralkyl, C7-C 30 aralkyl, C7-C 20 aralkyl or C7-C 15 aralkyl, and as used herein, the term "C2-C 60 heteroaralkyl" may be a group represented by (A 106 )(A 107 )(wherein A 106 may be C1-C 59 an alkylene group, and A 107 may be C1-C 59 a heteroaryl group), for example, C2-C 50 heteroaralkyl, C2-C 40 heteroaralkyl, C2-C 30 heteroaralkyl, C2-C 20 heteroaralkyl or C2-C 15 heteroaralkyl.

[0546] In the specification, the group "R 10a " may be:

[0547] deuterium (-D), -F, -Cl, -Br, -I, hydroxy, cyano or nitro;

[0548] each unsubstituted or substituted by the following C1-C 60 alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl or C1-C 60 alkoxy: deuterium, -F, -Cl, -Br, -I, hydroxy, cyano, nitro, C3-C 60 carbocyclic group, C1-C 60 heterocyclic group, C6-C 60 aryloxy, C6-C 60 arylthio, C7-C 60 aralkyl, C2-C 60 heteroaralkyl, -Si(Q 11 )(Q 12 )(Q 13 ), -N(Q 11 )(Q 12 ), -B(Q 11 )(Q 12 ), -C(=O)(Q 11 ), -S(=O)2(Q 11 ), -P(=O)(Q11 )(Q 12 ) or any combination thereof;

[0549] Each unsubstituted or substituted C3-C 60 carbocyclic group, C1-C 60 heterocyclic group, C6-C 60 aryloxy group, C6-C 60 arylthio group, C7-C 60 aralkyl group or C2-C 60 heteroaralkyl group: deuterium, -F, -Cl, -Br, -I, hydroxy group, cyano group, nitro group, C1-C 60 alkyl group, C2-C 60 alkenyl group, C2-C 60 alkynyl group, C1-C 60 alkoxy group, C3-C 60 carbocyclic group, C1-C 60 heterocyclic group, C6-C 60 aryloxy group, C6-C 60 arylthio group, C7-C 60 aralkyl group, C2-C 60 heteroaralkyl group, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O)2(Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof; or

[0550] -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O)2(Q 31 ) or -P(=O)(Q 31 )(Q 32 )。

[0551] In the specification, Q1, Q 11 to Q 13 、Q 21 to Q 23 and Q 31 to Q33 Each may independently be: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxy; cyano; nitro; C1-C 60 alkyl; C2-C 60 alkenyl; C2-C 60 alkynyl; C1-C 60 alkoxy; each unsubstituted or substituted by deuterium, -F, cyano, C1-C 60 alkyl, C1-C 60 alkoxy, phenyl, biphenyl or any combination thereof-substituted C3-C 60 carbocyclic group or C1-C 60 heterocyclic group; C7-C 60 aralkyl; or C2-C 60 heteroaralkyl.

[0552] As used herein, the term "heteroatom" may be any atom other than a carbon atom and a hydrogen atom. Examples of heteroatoms may include O, S, N, P, Si, B, Ge, Se or any combination thereof.

[0553] As used herein, the term "transition metal" may be hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), etc.

[0554] As used herein, the term "Ph" refers to phenyl, the term "Me" refers to methyl, the term "Et" refers to ethyl, and the term "tert-Bu" or "Bu t ” each refers to tert-butyl, and the term "OMe" as used herein refers to methoxy.

[0555] As used herein, the term "biphenyl" may be "phenyl-substituted phenyl". For example, "biphenyl" may be a substituted phenyl having a C6-C 60 aryl as a substituent.

[0556] As used herein, the term "terphenyl" may be "biphenyl-substituted phenyl". For example, "terphenyl" may be a substituted phenyl having a C6-C 60 aryl substituted by C6-C 60 aryl as a substituent.

[0557] Unless otherwise defined, the symbols * and *' as used herein each refer to the bonding site to the adjacent atom in the corresponding formula or moiety.

[0558] In the specification, the terms "x-axis", "y-axis", and "z-axis" are not limited to the three axes in an orthogonal coordinate system (e.g., a Cartesian coordinate system), and can be interpreted in a broader sense than the three axes in the aforementioned orthogonal coordinate system. For example, the x-axis, y-axis, and z-axis can describe axes that are orthogonal to each other, or can describe axes in different directions that are not orthogonal to each other.

[0559] Hereinafter, the light-emitting device according to the embodiment will be described in detail with reference to the following test examples and examples.

[0560] [Examples]

[0561] Measurement of Current Density and Driving Voltage

[0562] For the hole-only devices of Test Example 1 to Test Example 5, the graphs of current density and driving voltage were measured at room temperature (25 °C) using an SR-3ARIVL measuring instrument (TOPCON).

[0563] Test Example 1

[0564] A hole-only device including Compound A (HTM-334, available from Merck) was fabricated, and its structure is as follows.

[0565] ITO / Ag / ITO / Compound A (HTM-334):HAT-CN (95:5, volume ratio) / Compound A (HTM-334) / HAT-CN / Ag:Mg (9:1, volume ratio)

[0566] Test Example 2

[0567] A hole-only device including Compound B (LHT-3625, available from Deoksan Neolux) was fabricated, and its structure is as follows.

[0568] ITO / Ag / ITO / Compound A (HTM-334):HAT-CN (95:5, volume ratio) / Compound B (LHT-3625) / HAT-CN / Ag:Mg (9:1, volume ratio

[0569] Test Example 3

[0570] A hole-only device including compound D (LHT-7209, available from Deoksan Neolux) was fabricated, and its structure is as follows.

[0571] ITO / Ag / ITO / Compound A (HTM-334):HAT-CN (95:5, volume ratio) / Compound D (LHT-7209) / HAT-CN / Ag:Mg (9:1, volume ratio)

[0572] Test Example 4

[0573] A hole-only device including compound E (HTM-604, available from Merck) was fabricated, and its structure is as follows.

[0574] ITO / Ag / ITO / Compound A (HTM-334):HAT-CN (95:5, volume ratio) / Compound E (HTM-604) / HAT-CN / Ag:Mg (9:1, volume ratio)

[0575] Test Example 5

[0576] A hole-only device including compound C (LHT-7257, available from Deoksan Neolux) was fabricated, and its structure is as follows.

[0577] ITO / Ag / ITO / Compound A (HTM-334):HAT-CN (95:5, volume ratio) / Compound C (LHT-7257) / HAT-CN / Ag:Mg (9:1, volume ratio)

[0578] In Figure 9 The graphs of current density versus driving voltage measured in Test Example 1 and Test Example 2 are shown. Refer to Figure 9 , for the same driving voltage, the current density of compound A (HTM-334) is higher than that of compound B (LHT-3625). Thus, it can be inferred that compound A (HTM-334) has a higher hole mobility than compound B (LHT-3625).

[0579] InFigure 10 The figure showing the current density and driving voltage measured in Test Example 3 to Test Example 5. Refer to Figure 10 , for the same driving voltage, the current density of Compound D (LHT-7209) and Compound E (HTM-604) is higher than that of Compound C (LHT-7257). Thus, it can be inferred that Compound D (LHT-7209) and Compound E (HTM-604) have a higher hole mobility than Compound C (LHT-7257).

[0580] Device Example

[0581] Example 1

[0582] As the anode, ITO / Ag / ITO 2 glass substrate with 15 Ω / cm obtained from Corning Inc. was ultrasonically treated with isopropyl alcohol and pure water for 5 minutes each, cleaned by ultraviolet irradiation and exposure to ozone for 15 minutes, and loaded onto a vacuum deposition apparatus. Compound B (LHT-3625) and HAT-CN were co-deposited on the ITO / Ag / ITO anode pattern of the glass substrate at a volume ratio of 9:1 to form a hole injection layer with a thickness, Compound A (HTM-334) was deposited to form a hole transport layer with a thickness, and TCTA was deposited on the hole transport layer to form an electron blocking layer with a thickness. BH1 and BD were co-deposited on the electron blocking layer to a thickness, and BH2 and BD were co-deposited on the electron blocking layer to a thickness, thereby forming an emission layer. T2T was deposited on the emission layer to form a hole blocking layer with a thickness. TPM-TAZ was deposited on the hole blocking layer to form an electron transport layer with a thickness. Yb was deposited on the electron transport layer to form an electron injection layer with a thickness, and Ag and Mg were co-deposited at a weight ratio of 9:1 to form a cathode with a thickness. Compound CPL was deposited on the cathode to form a capping layer with a thickness, thus completing the fabrication of the light-emitting device.

[0583] Comparative Example 1

[0584] A light-emitting device was fabricated in substantially the same manner as in Example 1, except that the hole injection layer was formed by co-depositing TCPC and HAT-CN at a volume ratio of 9:1 to a thickness of and the hole transport layer was formed by depositing TCPC to a thickness of .

[0585] Comparative Example 2

[0586] A light-emitting device was fabricated in substantially the same manner as in Example 1, except that the hole injection layer was formed by co-depositing Compound A (HTM-334) and HAT-CN at a volume ratio of 9:1 to a thickness of and the hole transport layer was formed by depositing Compound B (LHT-3625) to a thickness of .

[0587] Example 2

[0588] As the anode, an ITO / Ag / ITO 2 glass substrate (available from Corning Incorporated) was ultrasonically cleaned in isopropyl alcohol and pure water for 5 minutes each, cleaned by ultraviolet irradiation and ozone exposure for 15 minutes, and loaded onto a vacuum deposition apparatus. Compound B (LHT-3625) and HAT-CN were co-deposited on the ITO / Ag / ITO anode pattern of the glass substrate at a volume ratio of 9:1 to form a hole injection layer having a thickness of

[0589] . Compound A (HTM-334) was deposited on the hole injection layer to form a hole transport layer having a thickness of . TCTA was deposited on the hole transport layer to form an electron blocking layer having a thickness of . BH1 and BD were co-deposited on the electron blocking layer at a volume ratio of 98:2 to a thickness of and BH2 and BD were co-deposited on the electron blocking layer at a volume ratio of 98:2 to a thickness of to form an emission layer. T2T was deposited on the emission layer to form a hole blocking layer having a thickness of . TPM-TAZ was deposited on the hole blocking layer to form an electron transport layer having a thickness of to form a first emission unit. Compound BCP and Li were co-deposited on the first emission unit at a volume ratio of 99:1 to form a layer having a thickness of

[0590] an n-type charge generation layer with a thickness, and co-deposit TCPC and HAT-CN on the n-type charge generation layer at a volume ratio of 9:1 to form a p-type charge generation layer with a thickness, thereby forming a first charge generation unit.

[0591] Deposit TAPC on the first charge generation unit to form a hole transport layer with a thickness, and deposit TCTA on the hole transport layer to form an electron blocking layer with a thickness. Co-deposit BH1 and BD on the electron blocking layer at a volume ratio of 98:2 to a thickness, and co-deposit BH2 and BD on the electron blocking layer at a volume ratio of 98:2 to a thickness, thereby forming an emission layer. Deposit T2T on the emission layer to form a hole blocking layer with a thickness. Deposit TPM-TAZ on the hole blocking layer to form an electron transport layer with a thickness, thereby forming a second emission unit.

[0592] Co-deposit compound BCP and Li on the second emission unit at a volume ratio of 99:1 to form an n-type charge generation layer with a thickness, and co-deposit TCPC and HAT-CN on the n-type charge generation layer at a volume ratio of 9:1 to form a p-type charge generation layer with a thickness, thereby forming a second charge generation unit.

[0593] Deposit TAPC on the second charge generation unit to form a hole transport layer with a thickness, and deposit TCTA on the hole transport layer to form an electron blocking layer with a thickness. Co-deposit BH1 and BD on the electron blocking layer at a volume ratio of 98:2 to a thickness, and co-deposit BH2 and BD on the electron blocking layer at a volume ratio of 98:2 to a thickness, thereby forming an emission layer. Deposit T2T on the emission layer to form a hole blocking layer with a thickness. Deposit TPM-TAZ on the hole blocking layer to form an electron transport layer with a thickness, thereby forming a third emission unit.

[0594] Co-deposit compound BCP and Li on the third emission unit at a volume ratio of 99:1 to form an n-type charge generation layer with a thickness, and co-deposit TCPC and HAT-CN on the n-type charge generation layer at a volume ratio of 9:1 to form a A p-type charge generation layer with a thickness is formed to form a third charge generation unit.

[0595] Deposit TCTA on the third charge generation unit to form one with A hole transport layer with a thickness, and co-deposit GH and GD at a volume ratio of 93:7 on the hole transport layer to form one with An emission layer with a thickness. GH is a host mixture including GH1 and GH2 at a volume ratio of 1:1. Deposit T2T on the emission layer to form one with A hole blocking layer with a thickness. Co-deposit TPM-TAZ and Liq at a volume ratio of 1:1 on the hole blocking layer to form one with An electron transport layer with a thickness, thus forming a fourth emission unit.

[0596] Deposit Yb on the fourth emission unit to form one with An electron injection layer with a thickness, and co-deposit Ag and Mg at a weight ratio of 9:1 to form one with A cathode with a thickness. Deposit the compound CPL on the cathode to form one with A capping layer with a thickness. A color conversion layer using quantum dots is formed on the capping layer, and a color filter layer is formed on the color conversion layer, thus completing the fabrication of the light-emitting device.

[0597] Comparative Example 3

[0598] A light-emitting device is fabricated in substantially the same manner as in Example 2, except that a hole injection layer of the first emission unit is formed by co-depositing TCPC and HAT-CN at a volume ratio of 9:1 to A thickness, and a hole transport layer of the first emission unit is formed by depositing TCPC to

[0599] Comparative Example 4

[0600] A light-emitting device is fabricated in substantially the same manner as in Example 2, except that a hole injection layer of the first emission unit is formed by co-depositing compound A (HTM-334) and HAT-CN at a volume ratio of 9:1 to A thickness, and a hole transport layer of the first emission unit is formed by depositing compound B (LHT-3625) to A thickness.

[0601] Example 3

[0602] The light-emitting device was fabricated in substantially the same manner as in Example 2, except that compound A (HTM-334) and HAT-CN were co-deposited at a volume ratio of 9:1 to the thickness to form the hole injection layer of the first emission unit, and compound A (HTM-334) was deposited to the thickness to form the hole transport layer of the first emission unit. Compound C (LHT-7257, Deoksan Neolux) was used instead of TCTC in the p-type charge generation layer of the first charge generation unit, the second charge generation unit, and the third charge generation unit, and compound D (LHT-7209, Deoksan Neolux) was used instead of compound TAPC in the hole transport layer of the second emission unit, the third emission unit, and the fourth emission unit.

[0603] Example 4

[0604] The light-emitting device was fabricated in substantially the same manner as in Example 3, except that compound E (HTM-604, Merck) was used instead of compound D (LHT-7209, Deoksan Neolux) in the hole transport layer of the second emission unit, the third emission unit, and the fourth emission unit.

[0605] Comparative Example 5

[0606] The light-emitting device was fabricated in substantially the same manner as in Example 3, except that compound C (LHT-7257) was used instead of compound D (LHT-7209, Deoksan Neolux) in the hole transport layer of the second emission unit, the third emission unit, and the fourth emission unit.

[0607] Comparative Example 6

[0608] The light-emitting device was fabricated in substantially the same manner as in Example 3, except that compound D (LHT-7209, Deoksan Neolux) was used instead of compound C (LHT-7257, Deoksan Neolux) in the p-type charge generation layer of the first charge generation unit, the second charge generation unit, and the third charge generation unit, and compound C (LHT-7257, Deoksan Neolux) was used instead of compound D (LHT-7209, Deoksan Neolux) in the hole transport layer of the second emission unit, the third emission unit, and the fourth emission unit.

[0609] Comparative Example 7

[0610] Fabricate a light-emitting device having the same configuration as that of Comparative Example 5, except that the same electronic components as those of the device of Example 4 are used and the characteristics of the device are evaluated simultaneously.

[0611]

[0612] Measurement of Resistivity between Anodes

[0613] Within the test patterns of the light-emitting devices of Examples 1 to 4 and Comparative Examples 1 to 7, a voltage is applied between the anode and the cathode of the pixel to drive the pixel, and the current between the anode of the driven pixel and the anode of another pixel adjacent to the driven pixel but not itself driven is measured. The resistance between adjacent anodes is obtained from the current-voltage formula, and by taking into account the area and thickness of each anode, the resistance is converted into a resistivity value to eliminate the influence of the pixel size. The size of the anode in the test pattern is 2 mm × 2 mm, and the thickness of a single device is and the thickness of the series device is

[0614] Figures 11 to 14 Each shows the range of resistivity converted from the lateral current measured for the test patterns of Examples 1 to 4 and Comparative Examples 1, 3, 5, and 7, and Table 2 shows the average value (average resistivity) of the resistivity of Examples 1 to 4 and Comparative Examples 1 to 7.

[0615] Since the anode is separated according to each sub-pixel of the light-emitting device, the current measured between adjacent anodes is expected to be the lateral leakage current generated along the interface between the anode and the hole injection layer which is the common layer on the anode.

[0616] Reference Figures 11 to 14 and Table 2, the resistivity values obtained in Examples 1, 2, 3, and 4 (shown as "average resistivity" in Table 2) are respectively in the range of about 1.25 to about 3 times the corresponding resistivity values obtained in Comparative Examples 1 and 2, Comparative Examples 3 and 4, Comparative Examples 5 and 6, and Comparative Example 7. Thus, it can be seen that the lateral leakage current along the upper surface of the anode in the light-emitting devices of Examples 1 to 4 is reduced compared to the light-emitting devices of Comparative Examples 1 to 7.

[0617] Measurement of Device Characteristics

[0618] The drive voltage (V), current efficiency (cd / A), and lifetime (LT) of each of the light-emitting devices fabricated in Examples 1 to 4 and Comparative Examples 1 to 7 were measured at 4,200 nits using a Keithley SMU 236 and a luminance meter PR65090 , h), and the results are shown in Table 2. Lifetime (LT 90 , h) was measured as the time required for the luminance to reach 90% of the initial luminance at 35 °C or 40 °C.

[0619] Among them, the light-emitting devices of Comparative Example 5 and Comparative Example 7 have the same configuration, but they differ in the evaluation time. The light-emitting device of Comparative Example 5 was evaluated simultaneously with the light-emitting device of Example 3, and the light-emitting device of Comparative Example 7 was evaluated simultaneously with the light-emitting device of Example 4. The characteristic values may vary depending on the timing of the evaluation.

[0620] Referring to Table 2, the light-emitting devices of Examples 1 to 4 of the present disclosure have driving voltages, current efficiencies, and lifetime characteristics equivalent to or more excellent than those of the corresponding light-emitting devices of Comparative Examples 1 to 7 in terms of structure. The light-emitting device of Example 1 corresponds to the light-emitting devices of Comparative Examples 1 and 2, the light-emitting device of Example 2 corresponds to the light-emitting devices of Comparative Examples 3 and 4, the light-emitting device of Example 3 corresponds to the light-emitting devices of Comparative Examples 5 and 6, and the light-emitting device of Example 4 corresponds to the light-emitting device of Comparative Example 7.

[0621] [Table 2]

[0622]

[0623] Measurement of CCT

[0624] Measure the CCT of each of the light-emitting devices of Example 2 and Comparative Example 2. For this purpose, first, white light is emitted corresponding to the fourth tone among 256 black-and-white tones or grayscales, and the luminance of the white light of the fourth tone is measured. The luminance of the white light of the fourth tone can be determined by the equation ((maximum luminance) × (4 / 255)^2.2). The luminance of the white light of the fourth tone measured in the light-emitting devices of Example 2 and Comparative Example 2 is 0.4 nits.

[0625] Calculate the theoretical luminance of each of the red, green, and blue lights required to generate the white light of the fourth tone. The light-emitting device of Example 2 was driven to have a current corresponding to the theoretical luminance values of the red, green, and blue lights for emitting the white light of the fourth tone, and the luminance of the device emitting only red, green, or blue light was measured. The luminance percentages (%) of the measured luminance values with respect to the theoretical luminance values of the red, green, and blue lights are shown in Table 3. The pixel resolution in the light-emitting devices of Example 2 and Comparative Example 2 is 140 PPI.

[0626] [Table 3]

[0627]

[0628] When the calculated luminance value and the measured luminance value of each color are the same, for example, when the luminance percentage is 100, the CCT becomes 0, and the smaller the luminance percentage, the larger the CCT.

[0629] Referring to Table 3, the CCT of the light-emitting device of Example 2 is 1.6, which is approximately 30% of the CCT of 5.07 of the emitting device of Comparative Example 2. The reduction in the CCT value of the light-emitting device of Example 2 is considered to be due to the enhancement of the vertical component current from the anode to the cathode and the reduction of the lateral leakage current around the anode and the hole injection layer.

[0630] According to the embodiment, by setting the hole mobility of the hole transport layer to be higher than the hole mobility of the hole injection layer and setting the HOMO energy level of the hole transport layer to be less than or equal to the HOMO energy level of the hole injection layer, a light-emitting device with reduced lateral leakage current can be provided.

[0631] The above description is an example of the technical features of the present disclosure, and those skilled in the art to which the present disclosure pertains will be able to make various modifications and changes. Therefore, the above embodiments of the present disclosure can be implemented independently or in combination with each other.

[0632] Therefore, the embodiments disclosed in the present disclosure are not intended to limit the technical spirit of the present disclosure, but to describe the technical spirit of the present disclosure, and the scope of the technical spirit of the present disclosure is not limited by these embodiments. The protection scope of the present disclosure should be interpreted by the claims, and it should be interpreted that all technical spirits within the equivalent scope are included in the scope of the present disclosure.

Claims

1. A light-emitting device includes a plurality of sub-pixels, wherein the plurality of sub-pixels include a first pixel that emits a first light, a second pixel that emits a second light, and a third pixel that emits a third light, the first light, the second light, and the third light have different maximum emission wavelengths from each other, each of the plurality of sub-pixels includes: a first electrode; a second electrode facing the first electrode; and a sandwich layer between the first electrode and the second electrode, the sandwich layer includes: an emission layer; a hole injection layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the hole injection layer and the emission layer, the hole mobility of the hole transport layer is greater than the hole mobility of the hole injection layer, the highest occupied molecular orbital energy level of the hole transport layer is less than or equal to the highest occupied molecular orbital energy level of the hole injection layer, and the highest occupied molecular orbital energy level is measured by cyclic voltammetry and expressed as a negative number.

2. The light-emitting device according to claim 1, wherein the absolute value of the difference between the highest occupied molecular orbital energy level of the hole transport layer and the highest occupied molecular orbital energy level of the hole injection layer is in the range of 0 eV to 0.3 eV.

3. The light-emitting device according to claim 1, wherein under the same driving voltage, the current density of a hole-only device including the hole transport layer but not including the hole injection layer is less than the current density of a hole-only device including the hole injection layer but not including the hole transport layer.

4. The light-emitting device according to claim 1, wherein the first light is red light, the second light is green light, and the third light is blue light.

5. The light-emitting device according to claim 1, wherein the hole injection layer further includes a p-dopant.

6. The light-emitting device according to claim 1, wherein the emission layer is separated according to each of the plurality of sub-pixels.

7. The light-emitting device according to claim 1, wherein the sandwich layer further includes: m stacked emission units; and m - 1 charge generation units respectively disposed between adjacent emission units among the m emission units, m is an integer of 2 or greater, the first emission unit to the m-th emission unit are stacked in sequence from the side where the first electrode is located, the first charge generation unit to the m - 1 charge generation units are stacked in sequence from the side where the first electrode is located, the first emission unit includes the emission layer, the hole injection layer, and the hole transport layer, each of the first charge generation unit to the m - 1 charge generation units includes a p-type charge generation layer and an n-type charge generation layer, and the light-emitting device further includes a color conversion unit on the second electrode.

8. The light-emitting device according to claim 7, wherein the second emission unit to the m-th emission unit respectively include a second hole transport layer to an m-th hole transport layer, the p-type charge generation layers of the first charge generation unit to the m - 1 charge generation units are respectively in direct contact with the second hole transport layer to the m-th hole transport layer, The hole mobility of each of the second hole transport layer to the m-th hole transport layer is greater than the hole mobility of each of the p-type charge generation layers, and the highest occupied molecular orbital energy level of each of the second hole transport layer to the m-th hole transport layer is less than or equal to the highest occupied molecular orbital energy level of each of the p-type charge generation layers.

9. A light-emitting device, comprising a plurality of sub-pixels, wherein the plurality of sub-pixels include a first pixel that emits a first light, a second pixel that emits a second light, and a third pixel that emits a third light, the first light, the second light, and the third light have different maximum emission wavelengths from each other, each of the plurality of sub-pixels includes: a first electrode; a second electrode facing the first electrode; and a sandwich layer between the first electrode and the second electrode, the sandwich layer includes: a light-emitting layer; a hole injection layer disposed between the first electrode and the light-emitting layer; and a hole transport layer disposed between the hole injection layer and the light-emitting layer, the hole mobility of the hole transport layer is greater than the hole mobility of the hole injection layer; and the color crosstalk of the light-emitting device is in the range of 0 to 5, and the color crosstalk is calculated by Equation 1: Equation 1 wherein, in Equation 1, Lum 1+2+3 is the luminance of the white light of the specific tone in the case where light is emitted from all of the first pixels, the second pixels, and the third pixels such that the light-emitting device emits white light of the specific tone, where the first pixels emit the first light having a first luminance under a first driving condition, the second pixels emit the second light having a second luminance under a second driving condition, and the third pixels emit the third light having a third luminance under a third driving condition. Lum1 is the luminance of the first light emitted by the light-emitting device when the second pixel and the third pixel do not emit light and the first pixel emits light under the first driving condition, Lum2 is the luminance of the second light emitted by the light-emitting device when the first pixel and the third pixel do not emit light and the second pixel emits light under the second driving condition, and Lum3 is the luminance of the third light emitted by the light-emitting device when the first pixel and the second pixel do not emit light and the third pixel emits light under the third driving condition.

10. The light-emitting device according to claim 9, wherein the specific tone is one of the first tone level to the tenth tone level among 256 tone levels.

11. The light-emitting device according to claim 9, wherein at the specific tone, the white light has a luminance in the range of 0.1 nit to 1.0 nit.

12. The light-emitting device according to claim 9, wherein the light-emitting device has a resolution in the range of 100 pixels per inch to 1,000 pixels per inch.

13. The light-emitting device according to claim 9, wherein the highest occupied molecular orbital energy level of the hole transport layer is less than or equal to the highest occupied molecular orbital energy level of the hole injection layer, and the highest occupied molecular orbital energy level is measured by cyclic voltammetry and expressed as a negative number.

14. A light-emitting device, comprising a plurality of sub-pixels, wherein the plurality of sub-pixels include a first pixel that emits a first light, a second pixel that emits a second light, and a third pixel that emits a third light, the first light, the second light, and the third light have different maximum emission wavelengths from each other, each of the plurality of sub-pixels includes: a first electrode; a second electrode facing the first electrode; An interlayer between the first electrode and the second electrode; and a color conversion unit on the second electrode, The interlayer includes: m stacked emission units; and m - 1 charge generation units respectively disposed between adjacent emission units among the m emission units, m is an integer of 2 or greater, The first emission unit to the mth emission unit are stacked in sequence from the side where the first electrode is located, The first charge generation unit to the (m - 1)th charge generation unit are stacked in sequence from the side where the first electrode is located, The first emission unit to the mth emission unit respectively include a first hole transport layer to an mth hole transport layer, Each of the first charge generation unit to the (m - 1)th charge generation unit includes a p - type charge generation layer and an n - type charge generation layer, The p - type charge generation layers of the first charge generation unit to the (m - 1)th charge generation unit are respectively in direct contact with the second hole transport layer to the mth hole transport layer, The hole mobility of each of the second hole transport layer to the mth hole transport layer is greater than the hole mobility of each of the p - type charge generation layers, and The highest occupied molecular orbital energy level of each of the second hole transport layer to the mth hole transport layer is less than or equal to the highest occupied molecular orbital energy level of each of the p - type charge generation layers.

15. The light - emitting device according to claim 14, wherein The color crosstalk of the light - emitting device is in the range of 0 to 5, and the color crosstalk is calculated by Equation 1: Equation 1 Among them, In Equation 1, Lum 1+2+3 is the luminance of the white light of the specific gradation in the case where light is emitted from all of the first pixels, the second pixels, and the third pixels such that the light-emitting device emits white light of the specific gradation, where the first pixels emit the first light having a first luminance under a first driving condition, the second pixels emit the second light having a second luminance under a second driving condition, and the third pixels emit the third light having a third luminance under a third driving condition. Lum1 is the luminance of the first light emitted by the light - emitting device when the second pixel and the third pixel do not emit light and the first pixel emits light under the first driving condition, Lum2 is the luminance of the second light emitted by the light - emitting device when the first pixel and the third pixel do not emit light and the second pixel emits light under the second driving condition, and Lum3 is the luminance of the third light emitted by the light - emitting device when the first pixel and the second pixel do not emit light and the third pixel emits light under the third driving condition.

16. The light - emitting device according to claim 14, wherein at least one of the m emission units emits light having a maximum emission wavelength in the range of 410 nm to 490 nm.

17. The light - emitting device according to claim 14, wherein at least one of the m emission units emits light having a maximum emission wavelength in the range of 490 nm to 580 nm.

18. The light - emitting device according to claim 14, wherein m is 4, Three of the m emission units emit light having a maximum emission wavelength in the range of 410 nm to 490 nm, and One of the m emission units emits light having a maximum emission wavelength in the range of 490 nm to 580 nm.

19. An electronic device, comprising the light - emitting device according to any one of claims 1 to 18 and a thin - film transistor, wherein The thin film transistor includes a source electrode and a drain electrode, and the first electrode of the light emitting device is electrically connected to at least one of the source electrode and the drain electrode of the thin film transistor.

20. An electronic device, comprising the light emitting device according to any one of claims 1 to 18, wherein the electronic device is a flat panel display, a curved display, a computer monitor, a medical monitor, a television, a billboard, an indoor light, an outdoor light, a signal light, a head-up display, a fully transparent display, a partially transparent display, a flexible display, a rollable display, a foldable display, a stretchable display, a laser printer, a telephone, a mobile phone, a tablet computer, a phablet, a personal digital assistant, a wearable device, a laptop computer, a digital camera, a video camera, a viewfinder, a microdisplay, a three-dimensional display, a virtual reality display, an augmented reality display, a vehicle, a video wall having a plurality of displays spliced together, a theater screen, a stadium screen, a light therapy device, and a signboard.

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