Solar cell, preparation method, electric equipment and power generation equipment
By using passivating agents of zinc ions and specific anions in perovskite solar cells, the defects of the light absorption layer are solved, and the lattice defect problem between the light absorption layer and the transport layer is improved, and the conversion efficiency and stability of the solar cell are improved.
Patent Information
- Application Number
- CN202410084805.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-19
- Publication Date
- 2025-07-22
AI Technical Summary
The lattice defect between the light absorption layer and the transport layer in a perovskite solar cell leads to the recombination loss of electrons and holes, reducing the conversion efficiency of the solar cell.
Using a passivating agent containing zinc ions and specific anions, such as an organic zinc compound containing benzene ring, carbonyl, amino, hydroxyl, etc., by forming hydrogen bonds and conjugated structures with the light absorption layer, passivating defects of the light absorption layer, improving crystallinity and reducing interface defects.
The photoelectric conversion efficiency and stability of solar cells are improved, and the grain boundary and interface defects of the light absorption layer are effectively passivated through passivating agents, thereby improving the filling factor and open circuit voltage.
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Figure CN120358875A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of batteries, and particularly to solar cells, preparation methods, electrical equipment, and power generation equipment. Background Art
[0002] Solar cells utilize the photovoltaic effect as the working principle to directly convert solar energy into electrical energy for industrial and domestic use, and have become one of the most promising technologies for solving the human energy crisis.
[0003] Solar cells generally include a light absorption layer and a transport layer. There are lattice defects at the interface between the light absorption layer, the light absorption layer and the transport layer. Especially for the light absorption layer composed of perovskite materials, there are more lattice defects between the perovskite light absorption layer, the perovskite light absorption layer and the transport layer, resulting in the recombination loss of electrons and holes, and the conversion efficiency of solar cells is relatively low. Summary of the Invention
[0004] In view of this, the main technical problem to be solved by this application is to improve the relatively low photoelectric conversion efficiency of calcium solar cells, so as to provide solar cells, preparation methods, electrical equipment, and power generation equipment.
[0005] To solve the above technical problem, a technical solution adopted by this application is: to provide a solar cell, including a light absorption layer and a passivator. The passivator is used to passivate the light absorption layer. The cation of the passivator includes zinc ions, and the anion of the passivator includes one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing a carbonyl group and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, and an anion containing a hydroxyl group and a carbonyl group. In the technical solution of the embodiment of this application, the passivator includes the above-mentioned organozinc. The zinc ions of the organozinc can passivate the defects of the light absorption layer as a Lewis acid, can improve the crystallinity of the light absorption layer, reduce the interface defects of the light absorption layer, and improve the conversion efficiency of the solar cell. The anion of the organozinc has a hydrogen atom, and the hydrogen atom can form a hydrogen bond with the light absorption layer through coordination, which can passivate the defects of the grain boundaries and interfaces of the light absorption layer, improve the fill factor of the solar cell, and improve the conversion efficiency of the solar cell. The anion of the passivator in the embodiment of this application includes one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing a carbonyl group and a conjugated structure with the carbonyl group, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group, making the electron cloud density of the anion in the embodiment of this application relatively large, more effectively binding to the defective cations in the light absorption layer to play a passivation role, or / and, the anion has a hydroxyl group or O - The strength of the hydrogen bond formed with the light absorption layer is greater, making the passivator in the embodiment of this application better passivate the light absorption layer, and more conducive to improving the conversion efficiency of the solar cell.
[0006] In some embodiments, the anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring includes an anion containing a benzene ring and a sulfonic acid group on the benzene ring. In the embodiments of the present application, the benzene ring is an electron-donating group and the sulfonate is an electron-withdrawing group, so that the electron cloud density of the whole anion is very large, and it can effectively combine with the cations in the defects of the light-absorbing material in the light-absorbing layer to play a passivation role.
[0007] In some embodiments, in the anion containing a hydroxyl group and a carbonyl group, the hydroxyl group and the carbonyl group form a five-membered ring or a six-membered ring with zinc ions. In the embodiments of the present application, the formation of a five-membered ring or a six-membered ring makes the passivator have stronger stability. At the same time, the electron cloud density of the ring structure is relatively large, which can more effectively combine with the defective cations in the light-absorbing layer, so that the passivator in the embodiments of the present application has a better passivation effect.
[0008] In some embodiments, the number of hydroxyl groups in the anion containing a hydroxyl group and a carbonyl group is more than five. The anion with a polyhydroxy structure of more than five can form multiple hydrogen bonds with the hydrogen in the anion in the light-absorbing layer, improving the binding strength between the passivator and the light-absorbing material.
[0009] In some embodiments, the passivator includes one or more of zinc p-toluenesulfonate, zinc o-toluenesulfonate, zinc m-toluenesulfonate, zinc p-ethylbenzenesulfonate, zinc gluconate, zinc lactate, zinc mannonate, zinc xylonate, zinc galactonate, zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate), zinc bis(3,3,7,7-tetramethyl-4,6-heptanedionate), zinc tryptophanate, zinc lysinate, and zinc glycinate. In the embodiments of the present application, when the anion of the passivator includes an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, the passivator includes zinc p-toluenesulfonate. For the zinc p-toluenesulfonate passivator, in the p-benzenesulfonate ion therein, the benzene ring is an electron-donating group and the sulfonate is an electron-withdrawing group, so that the electron cloud density of the whole ion is very large, and it can effectively combine with the cations in the defects of the light-absorbing material in the light-absorbing layer to play a passivation role.
[0010] In the embodiments of the present application, when the anion of the passivator is an anion containing a hydroxyl group and a carbonyl group, in this case, the passivator includes zinc gluconate and zinc lactate. For the zinc gluconate passivator, the gluconate root contains a polyhydroxy structure. For the light-absorbing material containing organic cations, the polyhydroxy structure can bond with the hydrogen atoms in the cations to form very strong hydrogen bonds, playing a passivation role. The advantage of the lactate root in zinc lactate is that: the electron cloud density of the ring structure is relatively large, and at the same time, O - forms a hydrogen bond with the light-absorbing material in the light-absorbing layer, especially forms a hydrogen bond with the perovskite light-absorbing material, playing a passivation role.
[0011] In the embodiments of the present application, the anion of the passivator is an anion containing amino group and carboxylate group. In this case, the passivator includes zinc tryptophan, zinc lysine, zinc glycine, etc. Advantages of lysine ion in zinc lysine: Multiple amino groups can passivate the cation defects of the light-absorbing material; for the light-absorbing material containing organic cations, the oxygen atom in the carboxylate group forms a hydrogen bond with the hydrogen in the light-absorbing material in the light-absorbing layer, playing a passivating role. Advantages of tryptophan ion in zinc tryptophan: The tryptophan ion contains an indole electron-rich group, making the electron cloud density of the tryptophan ion large, and it can more effectively combine with the cations in the defects of the light-absorbing material in the light-absorbing layer to play a passivating role. Both the amino group and the carboxylate group in zinc glycine can form hydrogen bonds with the hydrogen in the perovskite, playing a passivating role; when zinc glycine is set as a passivation layer on one side of the light-absorbing layer, it can also reduce the work function of the light-absorbing layer, improve the interfacial electron extraction ability, and improve the light conversion efficiency.
[0012] In the embodiments of the present application, the anion of the passivator is an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven. In this case, the passivator includes zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate), which contains two or more carbonyl groups with large electron cloud density, and can more effectively combine with the cations in the defects of the light-absorbing material in the light-absorbing layer to play a passivating role; in the embodiments of the present application, the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, making the passivator more hydrophobic, which can reduce or prevent the erosion of water in the environment and increase the stability of perovskite; in the embodiments of the present application, the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, which can make the passivator more suitable for passivating the perovskite voids and improve the passivation effect of the passivator. The intermediate state of zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate) has a double bond conjugate structure and a carbonyl group. The reason is that one of the carbonyl groups is unstable and can be converted into a carbon-carbon double bond structure, and this double bond structure can form a conjugate structure with another carbonyl group. The double bond conjugate structure and the carbonyl group are groups with large electron cloud density, making the electron cloud density of zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate) large, and it can more effectively combine with the cations in the defects of the light-absorbing material in the light-absorbing layer to play a passivating role. The number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, making the passivator more hydrophobic, which can reduce or prevent the erosion of water in the environment and increase the stability of perovskite; the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, which can make the passivator more suitable for passivating the perovskite grain boundaries and grain surface voids and improve the passivation effect of the passivator.
[0013] In some embodiments, the passivator includes zinc p-toluenesulfonate and / or zinc gluconate. In the embodiments of the present application, the p-toluenesulfonate ion of zinc p-toluenesulfonate has a relatively large electron cloud density, which binds better with the cations in the defects of the light-absorbing material in the light-absorbing layer, resulting in a better passivation effect. The gluconate ion in zinc gluconate has five hydroxyl groups, which can bond with the hydrogen atoms in the cations of the light-absorbing material in the light-absorbing layer to form very strong hydrogen bonds, playing a good passivation role.
[0014] In some embodiments, the solar cell further includes a first electrode, a first transport layer, a second transport layer, and a second electrode. The first electrode is disposed on the side of the light-absorbing layer close to the light-incident surface, the first transport layer is disposed between the first electrode and the light-absorbing layer, the second transport layer is disposed on the side of the light-absorbing layer away from the first transport layer, and the second electrode is disposed on the side of the second transport layer away from the light-absorbing layer. In the embodiments of the present application, when light irradiates on the solar cell, photons can excite electrons from covalent bonds in the light-absorbing layer, resulting in the generation of electron-hole pairs. The electrons move in the direction of the first transport layer and the first electrode, and the holes move in the direction of the second transport layer and the second electrode, or the electrons move in the direction of the second transport layer and the second electrode, and the holes move in the direction of the first transport layer and the first electrode, so that a voltage is formed between the first electrode and the second electrode.
[0015] In some embodiments, the first transport layer includes a hole transport material, and the second transport layer includes an electron transport material. In the embodiments of the present application, the first transport layer is a hole transport layer, and the second transport layer is an electron transport layer. According to the division of the light propagation and charge transport directions, the solar cell is a reverse solar cell.
[0016] In some embodiments, the solar cell further includes a blocking layer, and the blocking layer is disposed between the second transport layer and the second electrode. In the embodiments of the present application, by providing the blocking layer, interfacial chemical reactions can be reduced.
[0017] In some embodiments, the passivating agent is disposed in the light absorption layer, and / or the passivating agent is disposed on the side of the light absorption layer close to the light incident direction to form a first passivation layer, and / or the passivating agent is disposed on the side of the light absorption layer close to the light exit direction to form a second passivation layer. In the embodiments of the present application, the passivating agent can be disposed in the light absorption layer. The passivating agent located in the light absorption layer can passivate the grain boundaries of the light absorbing material in the light absorption layer, reduce the defects in the bulk phase of the light absorption layer, can improve the fill factor of the solar cell to a certain extent, and can improve the conversion efficiency of the solar cell; the passivating agent can be located on one or both sides of the light absorption layer. The passivation layer located on one side of the light absorption layer can passivate the interface defects between the light absorption layer and the transport layer, improve the fill factor of the solar cell, and improve the conversion efficiency of the solar cell. In an embodiment of the present application, the first passivation layer can be disposed below the light absorption layer of the inverted solar cell, so that the first passivation layer is located between the light absorption layer and the hole transport layer. The dipole of the first passivation layer is relatively large, which can reduce the work function of the hole transport material, make the energy bands of the light absorption layer and the hole transport layer more matched, and can improve the carrier extraction ability, thereby improving the fill factor and the photoelectric conversion efficiency of the solar cell.
[0018] In some embodiments, the passivating agent is located in the light absorption layer, and the passivating agent is located on the side of the light absorption layer close to the light exit direction to form a second passivation layer; in the direction from the light exit direction to the light incident direction, the mass concentration gradient of the passivating agent in the light absorption layer decreases. In the embodiments of the present application, the passivating agent is located both in the light absorption layer and above the light absorption layer. The passivating agent can passivate the grain boundary defects of the light absorbing material located in the light absorption layer and the interface defects of the light absorption layer at the same time, and has a good passivation effect, which can further improve the photoelectric conversion efficiency of the solar cell. In the embodiments of the present application, there are more grain boundary defects on the side of the light absorption layer close to the light exit direction, fewer grain boundary defects in the middle position of the light absorption layer (the middle position in the light exit direction to the light incident direction), and the grain boundary defects of the light absorption layer gradually decrease from the side of the light exit direction to the middle position. By setting the mass concentration gradient of the passivating agent in the light absorption layer to decrease in the direction from the light exit direction to the light incident direction, on the one hand, it can reach the grain boundary defects in the light absorption layer, and on the other hand, it can reduce the amount of the passivating agent used and improve the utilization rate of the passivating agent.
[0019] In some embodiments, the light absorption layer comprises a perovskite light absorption material, and the perovskite light absorption material comprises a material with a structural formula of ABX3, wherein A comprises one or more of methylammonium ions, formamidinium ions, and cesium ions; B comprises one or more of lead ions, tin ions, and silver ions; and X comprises one or more of chloride ions, bromide ions, and iodide ions. In the embodiments of the present application, the light absorption layer comprises a perovskite light absorption material, and the perovskite light absorption material has a photoelectric conversion function. In the embodiments of the present application, the anion in the organic zinc passivator can form a hydrogen bond with the A site in the perovskite light absorption material ABX3, which can passivate the perovskite interface defects, or passivate the perovskite grain boundaries and interface defects, thereby improving the open-circuit voltage and fill factor of the solar cell; the zinc cation in the organic zinc passivator can passivate the B site defects in the perovskite light absorption material ABX3, improve the crystallinity of the perovskite light absorption material, and reduce the bulk and interface defects of the perovskite light absorption material.
[0020] In some embodiments, B comprises lead ions. In the embodiments of the present application, the passivator can preferably passivate the perovskite grain boundaries and interface defects.
[0021] The second aspect of the present application also provides a method for manufacturing a solar cell, comprising:
[0022] Coating a light absorption material precursor solution on a substrate to form a first coating layer;
[0023] Coating a passivator solution on the first coating layer and performing annealing treatment to form a light absorption layer and a second passivation layer; wherein, the passivator is used to passivate the light absorption layer, the cation of the passivator comprises zinc ions, and the anion of the passivator comprises one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group.
[0024] In the embodiments of the present application, by first fabricating the light absorption material to form the first coating layer and then coating the passivator solution to form the light absorption layer and the second passivation layer, it is beneficial for the organic zinc passivator to passivate the light absorption layer.
[0025] In the embodiments of the present application, the substrate comprises a glass substrate and a transparent electrode conductive oxide arranged in a stacked manner in sequence; or a glass substrate, a transparent electrode conductive oxide, and a carrier transport layer arranged in a stacked manner in sequence, etc.
[0026] In some embodiments, a light-absorbing material precursor solution is coated on a substrate to form a first coating layer, including: coating a perovskite precursor solution on the substrate and annealing it at a first temperature for a first time to form a first state layer. A passivating agent solution is coated on the first coating layer and annealed to form a light-absorbing layer and a second passivation layer, including: coating a passivating agent solution on the first state layer and annealing it at a second temperature for a second time to form a light-absorbing layer and a second passivation layer. In the embodiments of the present application, by annealing the first coating layer formed by the light-absorbing material precursor solvent, the light-absorbing material precursor reacts to form an intermediate phase of the light-absorbing material or a light-absorbing material layer, that is, a solid-liquid mixed state light-absorbing material layer or a fully solid-state light-absorbing material layer is formed to form a first state layer; a passivating agent solution is coated on the first state layer and subjected to a secondary annealing treatment (annealing at a second temperature for a second time) to form a second passivation layer. When the first state layer is a solid-liquid mixed state light-absorbing material layer, the secondary annealing treatment can, on the one hand, make the passivating agent reach the intermediate phase of the light-absorbing material, so that the intermediate phase of the light-absorbing material and a part of organic zinc form a light-absorbing material layer containing an organic zinc passivating agent; at the same time, another part of the organic zinc on the surface layer of the intermediate phase of the light-absorbing material does not penetrate into the intermediate phase of the light-absorbing material, and it forms a second passivation layer under the conditions of the secondary annealing treatment. Therefore, two annealing treatments are adopted, that is, a first state layer is formed by a first annealing treatment first, and then a light-absorbing material layer with a bulk-doped passivating agent and a second passivation layer are formed by a secondary annealing treatment, so that the surface flatness of the light-absorbing material layer is relatively high, the probability of other layers (such as an electron transport layer, etc.) reaching the light-absorbing layer is reduced, and the stability of the solar cell is improved.
[0027] In some embodiments, the second time is greater than the first time. In the embodiments of the present application, by controlling the first time to be shorter, it is beneficial for the light-absorbing material precursor to react to form a solid-liquid mixed state light-absorbing material as the first state layer; by controlling the second time to be longer and the second time to be much greater than the first time, it is beneficial for the formation of a light-absorbing material layer with a bulk-doped passivating agent and a second passivation layer.
[0028] In some embodiments, the first time is 10 s - 120 s, and the second time is 20 min - 40 min. In the embodiments of the present application, by specifically controlling the first time within the above range, it is beneficial to control the precursor of the light absorption material to react to form a light absorption material in a solid-liquid mixed state as the first state layer. Further controlling the specific time of the second time is beneficial to forming a light absorption material layer with a bulk-doped passivator, and the surface flatness of the formed light absorption material layer is relatively high; at the same time, it is beneficial to the formation of the second passivation layer. In the embodiments of the present application, the first time is short, making the energy consumption of the manufacturing method of the present application low. Annealing the second time at the second temperature can simultaneously convert the first state layer into a light absorption layer, and the mass concentration gradient of the passivator in the light absorption layer decreases in the direction from the light-emitting direction to the light-incident direction. The embodiments of the present application can reduce the step of mixing the passivator into the precursor solution of the light absorption material, and can simplify the operation steps.
[0029] In some embodiments, the first temperature is 100°C - 150°C, and the second temperature is 100 - 150°C. In the embodiments of the present application, by controlling the first temperature and the second temperature within the above range, the precursor of the light absorption material can react to form a light absorption material in a solid-liquid mixed state as the first state layer, and to form a light absorption material layer and a second passivation layer.
[0030] In some embodiments, the concentration of the passivator solution is 0.3 mg / ml - 2 mg / ml. In the embodiments of the present application, by controlling the concentration of the passivator within the above range, it is beneficial for the passivator to reach the bulk of the light absorption material layer, and at the same time, it is beneficial to form a relatively dense passivator film layer on the surface of the light absorption material layer.
[0031] The third aspect of the present application further provides a method for preparing a solar cell, including: coating a passivating agent solution on a substrate and performing annealing treatment to form a first passivation layer; wherein, the passivating agent is used to passivate a light absorption layer, the cation of the passivating agent includes zinc ions, and the anion of the passivating agent includes one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group; coating a light absorption material precursor solution on the first passivation layer and performing annealing treatment to form a light absorption layer. In the embodiments of the present application, by first fabricating the first passivation layer and then fabricating the light absorption layer, the first passivation layer is located below the light absorption layer, and the lower interface of the light absorption layer can be passivated. In the embodiments of the present application, the manufacturing method of the solar cell can be used to manufacture a reverse solar cell, so that the first passivation layer is located between the hole transport layer and the light absorption material layer, enabling the first passivation layer to passivate the hole transport layer, reducing the work function of the hole transport layer, making the energy bands of the perovskite layer and the hole transport layer more matched, improving the carrier extraction ability, and improving the conversion efficiency of the solar cell.
[0032] In some embodiments, the temperature of the annealing treatment for forming the first passivation layer is 100°C - 150°C, and the time of the annealing treatment is 20 min - 40 min. In the embodiments of the present application, the film formation condition of the first passivation layer can be controlled by the temperature and time of the annealing treatment, so that the first passivation layer can modify the transport layer below the light absorption layer.
[0033] In some embodiments, the temperature of the annealing treatment for forming the light absorption layer is 100°C - 150°C, and the time of the annealing treatment is 10 min - 20 min. In the embodiments of the present application, by controlling the temperature and time of the annealing treatment, the film formation condition of the light absorption layer can be controlled, so that the light absorption layer has a good film formation.
[0034] The fourth aspect of the present application further provides a method for preparing a solar cell, including: mixing a passivating agent with a light absorption material precursor solution, coating the mixture on a substrate, and performing annealing treatment to form a light absorption layer doped with the passivating agent; wherein, the passivating agent is used to passivate the light absorption layer, the cation of the passivating agent includes zinc ions, and the anion of the passivating agent includes one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group. The preparation method of the embodiments of the present application can fabricate the passivating agent in the light absorption layer to achieve the purpose of bulk doping. The passivating agent is uniformly distributed in the light absorption layer, and the passivating agent can passivate the grain boundaries of the light absorption bulk phase, thereby improving the conversion efficiency of the solar cell.
[0035] In some embodiments, before mixing a passivator with a photoabsorber precursor solution and coating it on a substrate, it further includes: coating a passivator solution on the substrate, performing an annealing treatment to form a first passivation layer. Mixing a passivator with a photoabsorber precursor solution, coating it on the substrate, and performing an annealing treatment to form a photoabsorber layer doped with the passivator includes: mixing a passivator with a photoabsorber precursor solution, coating it on the first passivation layer, and performing an annealing treatment to form a photoabsorber layer doped with the passivator. The embodiments of the present application can further form a first passivation layer, such that the passivator in the embodiments of the present application can be located in the photoabsorber layer and on the side of the photoabsorber layer close to the incident light direction at the same time. The passivator located in the photoabsorber layer is evenly distributed in the photoabsorber layer. The passivator in the solar cell prepared by the embodiments of the present application can achieve passivation of the bulk grain boundaries and the lower interface of the photoabsorber layer, improving the conversion efficiency of the solar cell.
[0036] In some embodiments, after mixing a passivator with a photoabsorber precursor solution, coating it on the substrate, and performing an annealing treatment to form a photoabsorber layer doped with the passivator, it includes: coating a passivator solution on the photoabsorber layer doped with the passivator, and performing an annealing treatment to form a second passivation layer. The embodiments of the present application can further form a second passivation layer, such that the passivator in the embodiments of the present application can be located in the photoabsorber layer and on the side of the photoabsorber layer close to the outgoing light direction at the same time. The passivator located in the photoabsorber layer is evenly distributed in the photoabsorber layer. The passivator in the solar cell prepared by the embodiments of the present application can achieve passivation of the bulk grain boundaries and the upper interface of the photoabsorber layer, improving the conversion efficiency of the solar cell.
[0037] The fifth aspect of the present application further provides an electrical device, including the solar cell of the first aspect, or the solar cell prepared by the method of the second aspect or the third aspect or the fourth aspect. Since the electrical device of the fifth aspect of the present application includes the solar cell of the first aspect provided by the present application, or the solar cell prepared by the method of the second aspect or the third aspect or the fourth aspect, it thus has at least the same advantages as the solar cell of the first aspect, or has the same advantages as the solar cell prepared by the method of the second aspect or the third aspect or the fourth aspect.
[0038] The sixth aspect of the present application further provides a power generation device, including the solar cell of the first aspect, or the solar cell prepared by the method of the second aspect or the third aspect or the fourth aspect. Since the power generation device of the sixth aspect of the present application includes the solar cell of the first aspect provided by the present application, or the solar cell prepared by the method of the second aspect or the third aspect or the fourth aspect, it thus has at least the same advantages as the solar cell of the first aspect, or has the same advantages as the solar cell prepared by the method of the second aspect or the third aspect or the fourth aspect.
[0039] The above description is only an overview of the technical solution of the present application. In order to be able to understand the technical means of the present application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features and advantages of the present application more obvious and understandable, the specific embodiments of the present application are specifically given below. BRIEF DESCRIPTION OF THE DRAWINGS
[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained according to these drawings.
[0041] Figure 1 It is a schematic structural diagram of an embodiment of the solar cell of the present application;
[0042] Figure 2 It is a schematic structural diagram of another embodiment of the solar cell of the present application;
[0043] Figure 3 It is a schematic structural diagram of still another embodiment of the solar cell of the present application.
[0044] In the drawings:
[0045] 100, battery; 11, first electrode; 13, second electrode; 21, first transport layer; 23, second transport layer; 30, light absorption layer; 50, passivation layer; 51, first passivation layer; 52, second passivation layer; 60, barrier layer. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0046] Hereinafter, embodiments of the battery cell, battery, and electrical device of the present application are specifically disclosed with appropriate reference to the drawings. However, there may be cases where unnecessary detailed descriptions are omitted. For example, there are cases where detailed descriptions of well-known matters and repeated descriptions of actually identical structures are omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate the understanding of those skilled in the art. In addition, the drawings and the following description are provided for those skilled in the art to fully understand the present application and are not intended to limit the subject matter recited in the claims.
[0047] The "ranges" disclosed in this application are defined in the form of a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundaries of a particular range. The ranges defined in this way can include or exclude the end values, and can be combined arbitrarily, that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, ranges of 60-110 and 80-120 are also contemplated. In addition, if the minimum range values 1 and 2 are listed, and if the maximum range values 3, 4, and 5 are listed, the following ranges are all contemplated: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise stated, the numerical range "a-b" represents an abbreviated representation of any combination of real numbers between a and b, where a and b are both real numbers. For example, the numerical range "0-5" means that all real numbers between "0-5" are fully listed herein, and "0-5" is only an abbreviated representation of these numerical combinations. Additionally, when stating that a certain parameter is an integer ≥2, it is equivalent to disclosing that the parameter is, for example, the integers 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.
[0048] If there is no special instruction, all embodiments and optional embodiments of this application can be combined with each other to form a new technical solution.
[0049] If there is no special instruction, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.
[0050] If there is no special instruction, all steps of this application can be carried out in sequence or randomly, preferably in sequence. For example, the method includes steps (a) and (b), which means that the method can include steps (a) and (b) carried out in sequence, or can also include steps (b) and (a) carried out in sequence. For example, when it is mentioned that the method may further include step (c), it means that step (c) can be added to the method in any order. For example, the method can include steps (a), (b), and (c), or can also include steps (a), (c), and (b), or can also include steps (c), (a), and (b), etc.
[0051] If there is no special instruction, the "including" and "comprising" mentioned in this application mean open-ended or can also be closed-ended. For example, "including" and "comprising" can mean that other components not listed can also be included or comprised, or can also mean only including or comprising the listed components.
[0052] Unless otherwise specified, the term "or" is inclusive in this application. For example, the phrase "A or B" means "A, B, or both A and B". More specifically, any of the following conditions satisfies the condition "A or B": A is true (or present) and B is false (or absent); A is false (or absent) while B is true (or present); or both A and B are true (or present).
[0053] With the rapid development of new energy technologies, solar cells have been widely used in military, aerospace, industrial, commercial, agricultural, and communication fields. In particular, perovskite solar cells have gradually become a research hotspot for the new generation of solar cells due to their advantages such as high photoelectric conversion efficiency, simple manufacturing process, low production cost, and material cost. However, in the case of inverted perovskite solar cells, there are defects at the upper interface of the perovskite light absorption layer, which affect the efficiency and stability of the solar cell, resulting in relatively low photoelectric conversion efficiency and weak stability of the solar cell.
[0054] Based on this, as Figures 1 - 3 shown, this application provides a solar cell 100, including a light absorption layer 30 and a passivating agent. The passivating agent is used to passivate the light absorption layer 30. The cation of the passivating agent includes zinc ions, and the anion of the passivating agent includes one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing a carbonyl group and having more than seven carbon atoms in the carbon chain where the carbonyl group is located, and an anion containing a hydroxyl group and a carbonyl group. In the technical solution of the embodiment of this application, the passivating agent includes the above-mentioned organozinc. The zinc ions of the organozinc can passivate the defects of the light absorption layer 30 as a Lewis acid, can improve the crystallinity of the light absorption layer 30, reduce the interface defects of the light absorption layer 30, and enhance the conversion efficiency of the solar cell. The anion of the organozinc has a hydrogen atom, and the hydrogen atom can form a hydrogen bond with the light absorption layer 30 through a coordination effect, which can passivate the defects at the grain boundaries and interfaces of the light absorption layer 30, enhance the fill factor of the solar cell, and enhance the conversion efficiency of the solar cell. The anion of the passivating agent in the embodiment of this application includes one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing a carbonyl group and a conjugated structure with the carbonyl group, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group, so that the electron cloud density of the anion in the embodiment of this application is relatively large, and it can more effectively combine with the defective cations in the light absorption layer 30 to play a passivating role, or / and, the anion has a hydroxyl group or O - and forms a stronger hydrogen bond with the hydrogen atom in the light absorption layer 30, making the passivating effect of the passivating agent on the light absorption layer 30 in the embodiment of this application better, and more conducive to improving the conversion efficiency of the solar cell.
[0055] In some embodiments, the anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring includes an anion containing a benzene ring and a sulfonic acid group on the benzene ring. In the embodiments of the present application, the benzene ring is an electron-donating group and the sulfonate is an electron-withdrawing group, making the electron cloud density of the entire anion very large, which can effectively combine with the cations in the defects of the light-absorbing material in the light-absorbing layer 30 to play a passivating role.
[0056] In some embodiments, in the anion containing a hydroxyl group and a carbonyl group, the hydroxyl group and the carbonyl group form a five-membered or six-membered ring with zinc ions. In the embodiments of the present application, forming a five-membered or six-membered ring makes the passivator have stronger stability. At the same time, the electron cloud density of the ring structure is relatively large, which can more effectively combine with the defective cations in the light-absorbing layer 30, making the passivator in the embodiments of the present application have a better passivation effect.
[0057] In some embodiments, the number of hydroxyl groups in the anion containing a hydroxyl group and a carbonyl group is more than five. The anion with a polyhydroxy structure of more than five can form multiple hydrogen bonds with the hydrogen in the anion in the light-absorbing layer 30, improving the binding strength between the passivator and the light-absorbing material.
[0058] In some embodiments, the passivator includes one or more of zinc p-toluenesulfonate, zinc gluconate, zinc lactate, zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate), zinc tryptophan, zinc lysine, and zinc glycine.
[0059] In some embodiments, the passivator includes one or more of zinc p-toluenesulfonate, zinc o-toluenesulfonate, zinc m-toluenesulfonate, zinc p-ethylbenzenesulfonate, zinc gluconate, zinc lactate, zinc mannonate, zinc xylonate, zinc galactonate, zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate), zinc bis(3,3,7,7-tetramethyl-4,6-heptanedionate), zinc tryptophan, zinc lysine, and zinc glycine. In the embodiments of the present application, when the anion of the passivator includes an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, the passivator includes zinc p-toluenesulfonate. In other embodiments, the passivator may also include zinc o-toluenesulfonate, zinc m-toluenesulfonate, zinc p-ethylbenzenesulfonate, etc. In the embodiments of the present application, for zinc p-toluenesulfonate, zinc o-toluenesulfonate, zinc m-toluenesulfonate, and zinc p-ethylbenzenesulfonate passivators, the benzene ring in the benzenesulfonate ion is an electron-donating group and the sulfonate is an electron-withdrawing group, making the electron cloud density of the entire ion very large, which can effectively combine with the cations in the defects of the light-absorbing material in the light-absorbing layer 30 to play a passivating role. In particular, the polyhydroxy structure can bond with the cations at the A site in the ABX3 perovskite light-absorbing material to form very strong hydrogen bonds, playing a passivating role.
[0060] In the embodiments of the present application, the anion of the passivator is an anion containing hydroxyl and carbonyl groups. In this case, the passivator includes zinc gluconate and zinc lactate. In other embodiments, in this case, the passivator further includes zinc mannonate, zinc xylonate, zinc galactonate, etc. For the zinc gluconate passivator, the gluconate radical contains a polyhydroxy structure and can bond with the hydrogen atom in the cation of the light-absorbing material in the light-absorbing layer 30 to form a very strong hydrogen bond, playing a passivating role. In particular, the polyhydroxy structure of the gluconate radical can bond with the cation at the A site in the ABX3 perovskite light-absorbing material to form a very strong hydrogen bond, playing a passivating role. The principles of zinc mannonate, zinc xylonate, and zinc galactonate are similar to those of the gluconate ion and will not be elaborated here. The advantage of the lactate radical in zinc lactate is that the electron cloud density of the cyclic structure is relatively large, and at the same time, O- forms a hydrogen bond with the light-absorbing material in the light-absorbing layer 30, especially with the perovskite light-absorbing material, playing a passivating role.
[0061] In the embodiments of the present application, the anion of the passivator is an anion containing amino and carboxylate groups. In this case, the passivator includes zinc tryptophan, zinc lysine, zinc glycine, etc. The advantage of the lysine radical ion in zinc lysine is that multiple amino groups can passivate the cation defects of the light-absorbing material, especially the defects at the A site in the ABX3 perovskite light-absorbing material. The O in the carboxylate group forms a hydrogen bond with the light-absorbing material in the light-absorbing layer 30, playing a passivating role. The advantage of the tryptophan radical ion in zinc tryptophan is that the tryptophan radical ion contains an indole electron-rich group, making the electron cloud density of the tryptophan radical large, and it can more effectively combine with the cation in the defect of the light-absorbing material in the light-absorbing layer 30 to play a passivating role. Both the amino group and the carboxylate group in zinc glycine can form hydrogen bonds with the hydrogen in the perovskite, playing a passivating role. When zinc glycine is provided as the passivation layer 50 on one side of the light-absorbing layer 30, it can also reduce the work function of the light-absorbing layer 30, improve the interfacial electron extraction ability, and improve the light conversion efficiency.
[0062] In the embodiments of the present application, the anion of the passivating agent is an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is seven or more. In this case, the passivating agent includes zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate). In other embodiments, the passivating agent can also be zinc bis(3,3,7,7-tetramethyl-4,6-heptanedionate). In the embodiments of the present application, containing two or more carbonyl groups with a large electron cloud density of the carbonyl group can more effectively combine with the cations in the defects of the light-absorbing material in the light-absorbing layer 30 to play a passivating role; in the embodiments of the present application, the number of carbon atoms in the carbon chain where the carbonyl group is located is seven or more, making the passivating agent more hydrophobic, which can reduce or prevent the erosion of water in the environment and increase the stability of perovskite; in the embodiments of the present application, the number of carbon atoms in the carbon chain where the carbonyl group is located is seven or more, which can make the passivating agent more suitable for passivating the perovskite voids and improve the passivating effect of the passivating agent. The intermediate state of bis(2,2,6,6-tetramethyl-3,5-heptanedionate) has a double bond conjugate structure and a carbonyl group. The reason is that one of the carbonyl groups is unstable and can be converted into a carbon-carbon double bond structure, and this double bond structure can form a conjugate structure with another carbonyl group. The double bond conjugate structure and the carbonyl group are groups with a large electron cloud density, making bis(2,2,6,6-tetramethyl-3,5-heptanedionate) have a large electron cloud density, which can more effectively combine with the cations in the defects of the light-absorbing material in the light-absorbing layer 30 to play a passivating role. The number of carbon atoms in the carbon chain where the carbonyl group is located is seven or more, making the passivating agent more hydrophobic, which can reduce or prevent the erosion of water in the environment and increase the stability of perovskite; the number of carbon atoms in the carbon chain where the carbonyl group is located is seven or more, which can make the passivating agent more suitable for passivating the perovskite voids and improve the passivating effect of the passivating agent.
[0063] In some embodiments, the passivating agent includes zinc p-toluenesulfonate and / or zinc gluconate. In the embodiments of the present application, the p-toluenesulfonate ion of zinc p-toluenesulfonate has a relatively large electron cloud density and binds better with the cations in the defects of the light-absorbing material in the light-absorbing layer 30, resulting in a better passivating effect. The gluconate ion in zinc gluconate has five hydroxyl groups, which can bond with the hydrogen atoms in the cations of the light-absorbing material in the light-absorbing layer 30 to form very strong hydrogen bonds, playing a good passivating role.
[0064] The solar cell 100 further includes a first electrode 11, a first transport layer 21, a second transport layer 23, and a second electrode 13. The first electrode 11 is disposed on the side of the light absorption layer 30 close to the light incident surface. The first transport layer 21 is disposed between the first electrode 11 and the light absorption layer 30. The second transport layer 23 is disposed on the side of the light absorption layer 30 away from the first transport layer 21. The second electrode 13 is disposed on the side of the second transport layer 23 away from the light absorption layer 30. In the embodiment of the present application, when light irradiates on the solar cell 100, photons can excite electrons from covalent bonds in the light absorption layer 30, resulting in the generation of electron-hole pairs. The electrons move in the direction of the first transport layer 21 and the first electrode 11, and the holes move in the direction of the second transport layer 23 and the second electrode 13, or the electrons move in the direction of the second transport layer 23 and the second electrode 13, and the holes move in the direction of the first transport layer 21 and the first electrode 11, so that a voltage is formed between the first electrode 11 and the second electrode 13.
[0065] In some embodiments, classified according to the light propagation and charge transport directions, the solar cell 100 includes a reverse solar cell 100. The first transport layer 21 includes a hole transport material, and the second transport layer 23 includes an electron transport material. In the embodiment of the present application, the first transport layer 21 is a hole transport layer, and the second transport layer 23 is an electron transport layer. Specifically, the first electrode 11 is a negative electrode, and the second electrode 13 is a positive electrode.
[0066] In other embodiments, classified according to the light propagation and charge transport directions, the solar cell 100 can also be of a normal structure, the first electrode 11 is a positive electrode, the first transport layer 21 is an electron transport layer, the second electrode 13 is a negative electrode, and the second transport layer 23 is a hole transport layer.
[0067] The material of the first electrode 11 is generally selected from transparent conductive oxide materials, such as FTO (fluorine-doped SnO2 transparent conductive glass), ITO (indium tin oxide transparent conductive glass), AZO (aluminum-doped zinc oxide transparent conductive glass), BZO (boron-doped zinc oxide transparent conductive glass), IZO (indium zinc oxide transparent conductive glass), etc.
[0068] The second electrode 13 is usually an organic conductive material, an inorganic conductive material, or a mixture of an organic conductive material and an inorganic conductive material. Among them, the organic conductive material is, for example, a conductive polymer, and the conductive polymer includes but is not limited to at least one of polyethylenedioxythiophene (PEDOT), polythiophene, and polyacetylene; the inorganic conductive material is, for example, but not limited to at least one of transparent conductive oxides, metals, and carbon derivatives. Specifically, the inorganic conductive material is, for example, Ag, Cu, C, Au, Al, ITO, AZO, BZO, IZO, etc.
[0069] In some embodiments, the solar cell 100 further includes a blocking layer 60 disposed between the second transport layer 23 and the second electrode 13. The material of the blocking layer 60 refers to a material having the property of blocking the migration of holes or electrons, which can, to a certain extent, confine and restrict the migration of holes or electrons, but it does not mean that it can completely shield all holes or electrons. In other words, the blocking layer 60 can greatly weaken the migration of holes or electrons, but there may still be a small amount of holes or electrons that can still migrate. The blocking layer 60 is disposed between the electron transport layer and the second electrode 13, and the blocking layer 60 can block the migration of holes, improving the defects of the solar cell 100 caused by the migration of holes. In the embodiments of the present application, by providing the blocking layer 60, interfacial chemical reactions can be reduced. Specifically, in an embodiment of the present application, the blocking layer 60 is disposed between the electron transport layer and the second electrode 13 to block the migration of holes to the second electrode 13 and reduce the energy damage caused by charge recombination; and it can solve the problem of the decrease in the flat band potential caused by charge accumulation, the hindrance of carrier transport, and the low device conversion efficiency. In other embodiments, the blocking layer 60 can be disposed between any two film layers of the solar cell 100.
[0070] In the embodiments of the present application, the first electrode 11 is stacked on the base layer. The base layer is a transparent base layer. The material of the base layer includes glass and / or polymer; optionally, the polymer includes one or more of polyvinyl alcohol (PVA), polyethylene terephthalate (PET), polyimide (PI), polyethylene naphthalate (PEN), and polydimethylsiloxane (PDMS). In some embodiments, the base layer may not be provided either.
[0071] In some embodiments, the light absorption layer 30 includes a perovskite light absorption material, and the perovskite light absorption material includes a material with the structural formula ABX3, where A is an inorganic cation and / or an organic cation, B is an inorganic cation and / or an organic cation, and X is an inorganic anion and / or an organic anion. In the embodiments of the present application, the light absorption layer 30 includes a perovskite light absorption material, and the perovskite light absorption material has a photovoltaic conversion function. In the embodiments of the present application, the anion in the passivating agent organic zinc can form a hydrogen bond with the A site in the perovskite light absorption material ABX3, which can passivate the perovskite interface defects, or passivate the perovskite grain boundary and interface defects, improving the open-circuit voltage and fill factor of the solar cell 100; the zinc cation in the passivating agent organic zinc can passivate the B site defects in the perovskite light absorption material ABX3, improving the crystallinity of the perovskite light absorption material and reducing the bulk and interface defects of the perovskite light absorption material. In other embodiments, the light absorption material of the light absorption layer 30 may not be limited to the perovskite light absorption material, or may not be limited to the material with the structural formula ABX3.
[0072] A is an inorganic cation, or an organic cation, or a mixture of an inorganic cation and an organic cation. Optionally, it is methylammonium (CH3NH3 + )(MA + ), formamidinium (HC(NH2)2 + )(FA + ), cesium ion (Cs + ), or one or more of them.
[0073] B is an inorganic cation, or an organic cation, or a mixture of an inorganic cation and an organic cation. Optionally, it is at least one of divalent metal ions lead ion (Pb 2+ ), tin ion (Sn 2+ ), and silver ion (Ag + ). Further optionally, it is lead ion (Pb 2+ ).
[0074] X is an inorganic anion, or an organic anion, or a mixture of an inorganic anion and an organic anion. Optionally, it is one or more of halogen anions and carboxylate anions. Further optionally, it is one or more of chloride ion (Cl - ), bromide ion (Br - ), and iodide ion (I - ).
[0075] The function of the electron transport layer is to efficiently transport the free electrons generated by the light absorption layer 30, effectively block the passage of free holes, and form an ohmic contact at the interface with the light absorption layer 30. The material of the electron transport layer is at least one of the following materials and their derivatives and the materials obtained by doping or passivation. The electron transport materials include, but are not limited to, at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor material oxides, titanates, and fluorides. The imide compounds include at least one of phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. The quinone compounds include at least one of benzoquinone, naphthoquinone, phenanthrenequinone, or anthraquinone. The fullerenes and their derivatives include at least one of [6,6]-phenyl-C61-butyric acid methyl ester (PC 61 BM), [6,6]-phenyl-C71-butyric acid methyl ester (PC 71 BM), fullerene C60 (C 60 ), and fullerene C70 (C 70 ). The metal elements in the metal oxides include at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, and Cr. The semiconductor material oxides include silicon oxide. The titanates include at least one of strontium titanate and calcium titanate, and the fluorides include at least one of lithium fluoride and calcium fluoride.
[0076] The hole transport layer is used to transport holes to the corresponding electrodes and prevent the holes from diffusing in the opposite direction. The hole transport material is, for example but not limited to, at least one of 2,2',7,7'-tetrakis(N,N-di-p-methoxyanilino)-9,9'-spirobifluorene (Spiro-OMeTAD), methoxytriphenylamine-fluoromethylformamidine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene), polystyrenesulfonic acid, poly(3-hexylthiophene), triphenylene-core triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-anilino)carbazole-spirobifluorene, polythiophene, phosphoric acid-based single molecule, carbazole-based single molecule, sulfonic acid-based single molecule, triphenylamine-based single molecule, aromatic-based single molecule, metal oxide, and cuprous thiocyanate, wherein the metal element in the metal oxide selected in the hole transport material includes at least one of Ni, Mo, and Cu.
[0077] In some embodiments, the passivating agent is disposed in the light absorption layer 30, and / or the passivating agent is disposed on the side of the light absorption layer 30 close to the light incident direction to form a first passivation layer 51, and / or the passivating agent is disposed on the side of the light absorption layer 30 close to the light emitting direction to form a second passivation layer 52. In the embodiments of the present application, the passivating agent can be disposed in the light absorption layer 30. The passivating agent located in the light absorption layer 30 can passivate the grain boundaries of the light absorption material in the light absorption layer 30, reduce the defects in the bulk phase of the light absorption layer 30, can improve the fill factor of the solar cell to a certain extent, and can improve the conversion efficiency of the solar cell. In other embodiments, the passivating agent can be located on one or both sides of the light absorption layer 30. The passivation layer 50 located on one side of the light absorption layer 30 can passivate the interface defects between the light absorption layer 30 and the transport layer, improve the fill factor of the solar cell, and improve the conversion efficiency of the solar cell. In an embodiment of the present application, the first passivation layer 51 can be disposed below the light absorption layer 30 of the inverted solar cell, so that the first passivation layer 51 is located between the light absorption layer 30 and the hole transport layer. The dipole of the first passivation layer 51 is relatively large, which can reduce the work function of the hole transport material, make the energy bands of the light absorption layer 30 and the hole transport layer more matched, can improve the carrier extraction ability, and thus improve the fill factor and the photoelectric conversion efficiency of the solar cell. The passivating agent can also be disposed in the light absorption layer 30 and on one or both sides of the light absorption layer 30 at the same time.
[0078] In some embodiments, such as Figure 2As shown, a first passivation layer 51 is disposed between the light absorption layer 30 and the first transport layer 21. In an embodiment of the present application, the first passivation layer 51 may be disposed below the light absorption layer 30 of the inverted solar cell 100, such that the first passivation layer 51 is located between the light absorption layer 30 and the hole transport layer. The first passivation layer 51 has a relatively large dipole, which can reduce the work function of the hole transport material, making the energy bands of the light absorption layer 30 and the hole transport layer more matched, improving the carrier extraction ability, and thus enhancing the fill factor and the photoelectric conversion efficiency of the solar cell 100.
[0079] In some other embodiments, as Figure 1 shown, a second passivation layer 52 is disposed between the light absorption layer 30 and the second transport layer 23. In an embodiment of the present application, the second passivation layer 52 is disposed between the light absorption layer 30 and the electron transport layer, and the second passivation layer 52 is disposed above the light absorption layer 30 of the inverted solar cell 100. The second passivation layer 52 can passivate the interface defects between the light absorption layer 30 and the electron transport layer, improving the efficiency of the solar cell 100.
[0080] In some embodiments, the passivating agent is located in the light absorption layer 30, and the passivating agent is located on the side of the light absorption layer 30 close to the light-emitting direction to form the second passivation layer 52; in the direction from the light-emitting direction to the light-incident direction, the mass concentration gradient of the passivating agent in the light absorption layer 30 decreases. In an embodiment of the present application, the passivating agent is located both in the light absorption layer 30 and above the light absorption layer 30. The passivating agent can passivate the grain boundary defects of the light absorption material located in the light absorption layer 30 and the interface defects of the light absorption layer, achieving a reduction in the bulk defects and interface defects of the light absorption layer 30, having a good passivation effect, and further improving the photoelectric conversion efficiency of the solar cell. In an embodiment of the present application, there are more grain boundary defects on the side of the light absorption layer close to the light-emitting direction, fewer grain boundary defects at the middle position of the light absorption layer (the middle position in the light-emitting direction to the light-incident direction), and the grain boundary defects of the light absorption layer gradually decrease from the light-emitting direction side to the middle position. By setting the mass concentration gradient of the passivating agent in the light absorption layer to decrease in the direction from the light-emitting direction to the light-incident direction, on the one hand, it can reach the grain boundary defects in the light absorption layer for passivation, and on the other hand, it can reduce the amount of the passivating agent used and improve the utilization rate of the passivating agent. In an embodiment of the present application, in the direction from the light-emitting direction to the light-incident direction, the mass concentration of the passivating agent at different positions in the light absorption layer 30 can be calculated by measuring the zinc element content in the X-ray energy spectrum analysis (EDS) of the cross-section of the light absorption layer to calculate the mass concentration of the passivating agent at different positions in the light absorption layer 30.
[0081] The second aspect of the present application further provides a method for manufacturing a solar cell, including:
[0082] S110. Coat the light-absorbing material precursor solution on the substrate to form a first coating layer.
[0083] In one embodiment of the present application, taking the production of a perovskite solar cell as an example, the substrate includes a glass substrate, a transparent conductive oxide, and a hole transport layer stacked in sequence. The light-absorbing material precursor solution is spin-coated on the hole transport layer to form a first coating layer.
[0084] Specifically, in the embodiment of the present application, the light-absorbing material precursor solution includes a perovskite light-absorbing material precursor solution. The perovskite light-absorbing material precursor solution is spin-coated on the hole transport layer, and an anti-solvent is used for die-casting to form a first coating layer.
[0085] In another embodiment of the present application, the first coating layer can also be annealed to form a light-absorbing material layer, so that the light-absorbing material precursor solution reacts through annealing to form a solid-phase light-absorbing material layer.
[0086] S120. Coat a passivating agent solution on the first coating layer and perform annealing treatment to form a light-absorbing layer and a second passivation layer. Among them, the passivating agent is used to passivate the light-absorbing layer. The cation of the passivating agent includes zinc ions, and the anion of the passivating agent includes an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group, one or several of which.
[0087] In the embodiment of the present application, the alcohol solution of the passivating agent is spin-coated on the first coating layer and annealed at 100°C - 150°C, so that part of the passivating agent penetrates into the first coating layer, and a light-absorbing layer doped with the passivating agent is formed through annealing treatment; another part of the passivating agent forms a second passivation layer on the light-absorbing layer. Specifically, the preparation method of the embodiment of the present application further includes sequentially fabricating an electron transport layer and a positive electrode on the second passivation layer. In the embodiment of the present application, the passivating agent includes one or several of zinc p-toluenesulfonate, zinc gluconate, zinc lactate, zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate), zinc tryptophan, zinc lysine, and zinc glycine.
[0088] In another embodiment of the present application, the first coating layer can also be annealed to form a fully solid-state light-absorbing layer, and a passivating agent solution is further coated on the light-absorbing layer and annealed to form a second passivation layer. In the embodiment of the present application, the passivating agent can passivate the interface defects of the light-absorbing layer and improve the fill factor of the solar cell; the zinc cation of the organic zinc can passivate the defects of the light-absorbing layer as a Lewis acid, can improve the crystallinity of the light-absorbing layer, reduce the interface defects of the light-absorbing layer, and improve the conversion efficiency of the solar cell.
[0089] In an embodiment of the present application, by first fabricating a light absorption material to form a first coating layer, and then coating a passivating agent solution to form a light absorption layer and a second passivation layer, it is beneficial for the organic zinc passivating agent to passivate the light absorption layer.
[0090] In another embodiment of the present application, a method for preparing a solar cell includes:
[0091] S210, coating a perovskite precursor solution on a substrate, and annealing for a first time at a first temperature to form a first state layer.
[0092] In an embodiment of the present application, the manner of forming the first coating layer by using the light absorption material precursor solvent is the same as that in the above embodiment, and will not be elaborated herein.
[0093] In an embodiment of the present application, the first coating layer is annealed to cause the light absorption material precursor to react, forming an intermediate phase of the light absorption material, that is, forming a light absorption material layer in a solid-liquid mixed state, which is the first state layer. Or in another embodiment, an all-solid-state light absorption layer is formed through annealing as the first state layer.
[0094] S220, coating a passivating agent solution on the first state layer, and annealing for a second time at a second temperature to form a light absorption layer and a second passivation layer, wherein the passivating agent is used to passivate the light absorption layer, the cation of the passivating agent includes zinc ions, and the anion of the passivating agent includes one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group.
[0095] In an embodiment of the present application, a passivating agent solution is coated on the first state layer of the light absorption material intermediate phase, and after secondary annealing (annealing for a second time at a second temperature), on the one hand, the passivating agent can reach the light absorption material intermediate phase, and the light absorption material intermediate phase and part of the organic zinc form a light absorption layer under the conditions of secondary annealing, and the light absorption layer contains organic zinc; the organic zinc in the light absorption layer is formed by the coated passivating agent penetrating into the first state layer, so that in the direction from top to bottom, the mass concentration of organic zinc in the light absorption layer shows a stepwise decrease; at the same time, another part of the organic zinc on the surface layer of the light absorption material intermediate phase does not penetrate into the light absorption material intermediate phase, and forms a second passivation layer under the conditions of secondary annealing. Specifically, the preparation method of the embodiment of the present application further includes sequentially fabricating an electron transport layer and a positive electrode on the second passivation layer.
[0096] In the embodiments of the present application, two annealing treatments are adopted. That is, a first state layer is formed through a first annealing treatment first, and then a light absorption material layer with the passivating agent doped in the bulk phase and a second passivation layer are formed through a second annealing treatment. When the passivating agent solution is coated, the damage of the passivating agent solution to the first state layer is relatively small, the surface flatness of the light absorption material layer is relatively high, the probability of other layers (such as the electron transport layer, etc.) reaching the light absorption layer is reduced, and the stability of the solar cell is improved. In other embodiment modes, it may also be to coat the passivating agent solution on the first state layer of the solid-state light absorption layer, and after a second annealing treatment, a second passivation layer is formed on the light absorption layer, which can also achieve the effect of passivating the interface defects of the light absorption layer to a certain extent and improve the stability of the solar cell.
[0097] In some embodiments, the second time is greater than the first time. In the embodiments of the present application, controlling the second time to be longer and the second time being greater than the first time is beneficial to forming a light absorption material layer with the passivating agent doped in the bulk phase, and the light absorption material layer is in a fully solid state, so that the surface flatness of the light absorption material layer and the second passivation layer is relatively high, which is beneficial to improving the photoelectric conversion efficiency and lifespan of the solar cell.
[0098] In some embodiments, the first time is 10 s - 120 s, and the second time is 20 min - 40 min. In the embodiments of the present application, by controlling the first time to be shorter, it is beneficial for the light absorption material precursor to react to form a light absorption material in a solid-liquid mixed state; by controlling the second time to be longer and the second time being much greater than the first time, it is beneficial to form a light absorption material layer with the passivating agent doped in the bulk phase, and the light absorption material layer is in a fully solid state with relatively high surface flatness; at the same time, it is beneficial to the formation of the second passivation layer. In the embodiments of the present application, the shorter first time makes the manufacturing method of the present application have lower energy consumption. Annealing at the second temperature for the second time can simultaneously convert the first state layer into a light absorption layer, and in the direction from the light-emitting direction to the light-incident direction, the mass concentration gradient of the passivating agent in the light absorption layer decreases. The embodiments of the present application can reduce the step of mixing the passivating agent into the light absorption material precursor solution and can simplify the operation steps. Among them, the first time is 10 s, 20 s, 50 s, 55 s, 60 s, 70 s, 90 s, 100 s, 110 s, 115 s, 118 s, 120 s, etc., or the range formed by any two of the above values, for example, 10 s - 55 s, 55 s - 90 s, 90 s - 120 s, etc. The second time is 20 min, 22 min, 25 min, 28 min, 30 min, 33 min, 35 min, 39 min, 40 min, etc., or the range formed by any two of the above values, for example, 20 min - 28 min, 28 min - 33 min, 33 min - 40 min, etc.
[0099] In some embodiments, the first temperature is 100°C - 150°C, and the second temperature is 100 - 150°C. In the embodiments of the present application, by controlling the first temperature and the second temperature within the above ranges, the photoabsorbing material precursor can react to form a photoabsorbing material in a solid-liquid mixed state and form a photoabsorbing material layer. Among them, the first temperature is 100°C, 108°C, 110°C, 113°C, 115°C, 120°C, 125°C, 130°C, 132°C, 135°C, 138°C, 140°C, 145°C, 148°C, 150°C, etc., or a range formed by any two of the above values. For example, 100°C - 113°C, 113°C - 125°C, 125°C - 138°C, 138°C - 150°C, etc. The second temperature is 100°C, 108°C, 110°C, 113°C, 115°C, 120°C, 125°C, 130°C, 132°C, 135°C, 138°C, 140°C, 145°C, 148°C, 150°C, etc., or a range formed by any two of the above values. For example, 100°C - 125°C, 125°C - 140°C, 140°C - 150°C, etc.
[0100] In some embodiments, the concentration of the passivating agent solution is 0.3 mg / ml - 2 mg / ml. In the embodiments of the present application, by controlling the concentration of the passivating agent within the above range, on the one hand, it is beneficial to form a relatively dense passivating agent film layer on the surface of the photoabsorbing material layer, and on the other hand, it is beneficial for the passivating agent to reach the bulk phase of the photoabsorbing material layer. Among them, the concentration of the passivating agent solution can be 0.3 mg / ml, 0.5 mg / ml, 0.8 mg / ml, 1 mg / ml, 1.1 mg / ml, 1.5 mg / ml, 1.8 mg / ml, 2 mg / ml, etc., or a range formed by any two of the above values. For example, 0.3 mg / ml - 1.1 mg / ml, 1.1 mg / ml - 2 mg / ml, etc.
[0101] In some embodiments of the present application, the solvent selected for the passivating agent solution includes an alcohol solvent or a nitrile or a ketone solvent, such as one or more of methanol, ethanol, butanol, n-propanol, isopropanol, acetone, and acetonitrile.
[0102] The third aspect of the present application further provides a method for preparing a solar cell, including:
[0103] S310, coating the passivating agent solution on the substrate and performing annealing treatment to form a first passivation layer, wherein the cation of the passivating agent includes zinc ions, and the anion of the passivating agent includes one or more of an anion containing a benzene ring, an anion containing a carbonyl group and a conjugated structure with the carbonyl group, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group.
[0104] In an embodiment of the present application, taking the fabrication of a perovskite solar cell as an example, the substrate layer includes a glass substrate, a transparent conductive oxide, and a hole transport layer which are sequentially stacked. A passivating agent solution is spin-coated on the hole transport layer and annealed to form a first passivation layer.
[0105] In an embodiment of the present application, the passivating agent solution includes an alcohol solution of the passivating agent or a nitrile solution of the passivating agent. In an embodiment of the present application, annealing is performed at 100°C - 150°C for 20 min - 40 min to form the first passivation layer. By annealing at this temperature and for this time, the film formation of the first passivation layer can be controlled so that the first passivation layer can modify the hole transport layer under the light absorption layer. Among them, the annealing temperature can be 100°C, 108°C, 110°C, 113°C, 115°C, 120°C, 125°C, 130°C, 132°C, 135°C, 138°C, 140°C, 145°C, 148°C, 150°C, etc., or a range formed by any two of the above values. For example, 100°C - 113°C, 113°C - 125°C, 125°C - 138°C, 138°C - 150°C, etc. The annealing time can be 20 min, 22 min, 25 min, 28 min, 30 min, 33 min, 35 min, 39 min, 40 min, etc., or a range formed by any two of the above values. For example, 20 min - 28 min, 28 min - 33 min, 33 min - 40 min, etc.
[0106] S320. A light absorption material precursor solution is coated on the first passivation layer and annealed to form a light absorption layer.
[0107] In an embodiment of the present application, a perovskite light absorption material precursor solution is spin-coated on the first passivation layer and annealed at 100°C - 150°C for 10 min - 20 min to make the perovskite light absorption material precursor react to form a perovskite light absorption layer. In an embodiment of the present application, by controlling the annealing temperature and the annealing time at this temperature, the film formation of the light absorption layer can be controlled so that the light absorption layer has a good film formation. In an embodiment of the present application, the method for fabricating a solar cell further includes fabricating an electron transport layer and a positive electrode on the light absorption layer in sequence.
[0108] In the embodiments of the present application, the temperature of the annealing treatment can be 100°C, 108°C, 110°C, 113°C, 115°C, 120°C, 125°C, 130°C, 132°C, 135°C, 138°C, 140°C, 145°C, 148°C, 150°C, etc., or a range formed by any two of the above values. For example, 100°C - 113°C, 113°C - 125°C, 125°C - 138°C, 138°C - 150°C, etc. The time of the annealing treatment can be 10 min, 12 min, 14 min, 15 min, 18 min, 20 min, etc., or a range formed by any two of the above values. For example, 10 min - 14 min, 14 min - 18 min, 18 min - 20 min, etc.
[0109] In the embodiments of the present application, by first fabricating the first passivation layer and then fabricating the light absorption layer, the first passivation layer is located below the light absorption layer. In the embodiments of the present application, the manufacturing method of the solar cell can be used to manufacture a back-type solar cell, such that the first passivation layer is located between the hole transport layer and the light absorption material layer, so that the first passivation layer can passivate the hole transport layer, reduce the work function of the hole transport layer, make the energy bands of the perovskite layer and the hole transport layer more matched, improve the carrier extraction ability, and improve the fill factor and photoelectric conversion efficiency of the solar cell.
[0110] The fourth aspect of the present application further includes a preparation method of a solar cell, comprising:
[0111] S410: Mix a light absorption material precursor solution and a passivating agent, coat the mixture on a substrate, and perform an annealing treatment to form a light absorption layer doped with a bulk-phase passivating agent. Among them, the cation of the passivating agent includes zinc ions, and the anion of the passivating agent includes one or several of an anion containing a benzene ring, an anion containing a carbonyl group and a conjugated structure with the carbonyl group, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group.
[0112] The preparation method of the embodiments of the present application can fabricate the passivating agent in the light absorption layer to achieve the purpose of bulk-phase doping. The passivating agent is uniformly distributed in the light absorption layer, and the passivating agent can passivate the grain boundaries of the light absorption bulk phase, thereby improving the conversion efficiency of the solar cell. In the embodiments of the present application, the passivating agent is relatively uniformly distributed in the light absorption layer.
[0113] In another embodiment, a preparation method of a solar cell comprises:
[0114] S510: Coat the passivator solution on the base layer and perform annealing treatment to form a first passivation layer. The anions of the passivator include one or more of the anions containing a benzene ring and an electron-withdrawing substituent on the benzene ring, anions containing two or more carbonyl groups and having the number of carbon atoms in the carbon chain where the carbonyl groups are located more than seven, anions containing an amino group and a carboxylate group, and anions containing a hydroxyl group and a carbonyl group.
[0115] In the embodiments of the present application, the formed first passivation layer is the lower passivation layer, and the embodiments of the present application are used to passivate the lower interface of the photoabsorber layer to be fabricated in the next step.
[0116] S520: Mix the photoabsorber precursor solution and the passivator, coat it on the base layer, and perform annealing treatment to form a photoabsorber layer doped with the passivator.
[0117] In the embodiments of the present application, a photoabsorber layer with bulk-doped passivator can be formed. The passivator located in the photoabsorber layer is uniformly distributed in the photoabsorber layer and can passivate the grain boundaries of the photoabsorbing material in the photoabsorber layer.
[0118] S530: Coat the passivator solution on the photoabsorber layer doped with the passivator and perform annealing treatment to form a second passivation layer.
[0119] In the embodiments of the present application, the formed second passivation layer is the upper passivation layer and can passivate the upper interface of the photoabsorber layer.
[0120] In other embodiments, S510 or S530 may not be included, or the passivator may not be added in the steps of S520.
[0121] The fifth aspect of the present application further provides an electrical device, including the solar cell of the first aspect, or a solar cell prepared by the method of the second aspect or the third aspect or the fourth aspect. Since the electrical device of the fifth aspect of the present application includes the solar cell of the first aspect of the present application, or a solar cell prepared by the method of the second aspect or the third aspect or the fourth aspect, it thus has at least the same advantages as the solar cell of the first aspect, or has the same advantages as the solar cell prepared by the method of the second aspect or the third aspect or the fourth aspect. The electrical device is a common device including the solar cell of the present application, such as in the fields of communication, transportation, industry and agriculture, lighting, etc. The electrical device may include, for example, satellites, communication devices, traffic lights, lighthouses, wireless phone booths, monitoring devices in the oil drilling field, power systems, camping lights, electric vehicles, electronic device chargers, etc.
[0122] The sixth aspect of the present application further provides a power generation device, including the solar cell of the first aspect, or a solar cell prepared by the method of the second aspect, or the third aspect, or the fourth aspect. Since the power generation device of the sixth aspect of the present application includes the solar cell of the first aspect provided by the present application, or a solar cell prepared by the method of the second aspect, or the third aspect, or the fourth aspect, it thus has at least the same advantages as the solar cell of the first aspect, or has the same advantages as the solar cell prepared by the method of the second aspect, or the third aspect, or the fourth aspect.
[0123] The beneficial effects of the present application are further described below in conjunction with embodiments.
[0124] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail in conjunction with embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and in no way limits the present application and its application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.
[0125] Embodiment 1
[0126] Fabrication of perovskite solar cells:
[0127] (1) Treatment of FTO conductive glass
[0128] The etched FTO glass was ultrasonically cleaned in an aqueous solution of surfactant, distilled water and alcohol for 30 minutes respectively, dried, and placed in an ultraviolet ozone machine for irradiation for 10 min.
[0129] (2) Preparation of hole transport layer
[0130] In this embodiment, nickel oxide (NiOx) is used as the transport layer material. Before the experiment started, an aqueous dispersion of nickel oxide nanoparticles with a concentration of 20 mg / mL was prepared.
[0131] The aqueous dispersion of nickel oxide particles was spin-coated on the treated FTO glass and annealed at 100 °C for 10 min to form a dense nickel oxide hole transport layer with a thickness of 5 nm.
[0132] (3) Preparation of precursor solution of light absorption material
[0133] Preparation of perovskite precursor solution: 219 g of formamidinium iodide (FAI), 19.5 g of cesium iodide (CsI), 23.8 g of methylammonium iodide (MAI), and 691 g of lead iodide (PbI2) precursor materials were added to a mixed solvent of 800 ml of N,N-dimethylformamide (DMF) and 200 mL of dimethyl sulfoxide (DMSO). After stirring and dissolving thoroughly, it was filtered to obtain a perovskite precursor solution. Among them, the molar ratio of formamidinium iodide (FAI), cesium iodide (CsI), methylammonium iodide (MAI), and lead iodide (PbI2) was 0.85:0.05:0.1:1.
[0134] (4) Preparation of the light absorption layer and the passivation layer
[0135] The above perovskite precursor solution was evenly drop-coated on the upper surface of the nickel oxide hole transport layer at a spin-coating speed of 1000 rpm for 30 s. The film was rinsed with the antisolvent anisole and annealed on a hot stage at 110 °C for 30 s to form a brown perovskite film. This brown perovskite film was the first state layer, and the thickness of the first state layer was 700 nm.
[0136] Then, 100 ml of an isopropanol solution with a mass concentration of 1 mg / ml of zinc p-toluenesulfonate was spin-coated on the brown perovskite film and annealed on a hot stage at 110 °C for 20 min to obtain a FA 0.85 MA 0.1 Cs 0.05 PbI3 perovskite layer with a thickness of 700 nm and a gradient passivation and a zinc p-toluenesulfonate thin film as the second passivation layer on the perovskite layer. The thickness of the second passivation layer zinc p-toluenesulfonate thin film was 5 nm. The surface flatness of the light absorption layer and the second passivation layer obtained in this example was relatively high.
[0137] (5) Preparation of C 60 Electron transport layer, blocking layer, and Au electrode
[0138] Then, 20 nm of C 60 electron transport layer was further evaporated, and 5 nm of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was fabricated as the blocking layer on the electron transport layer.
[0139] A metal electrode copper with a thickness of 100 nm was prepared on the electron transport layer by vacuum evaporation to obtain a solar cell device.
[0140] Solar cell performance test:
[0141] Under the irradiation of standard simulated sunlight (AM1.5G, 100 mW / cm 2 ), the current-voltage test of the battery was carried out with FTO as the positive electrode and Cu as the negative electrode. The test voltage ranged from -0.1 V to 1.2 V, and the battery area was 0.075 cm 2Based on the obtained I-V curve, the short-circuit current J sc (mA / cm 2 ), open-circuit voltage V oc (V), fill factor FF (%), and power conversion efficiency PCE (%) can be obtained.
[0142] Example 2
[0143] The difference from Example 1 lies in: (4) Preparation of the light absorption layer and the passivation layer. Specifically, the preparation of the light absorption layer and the passivation layer in Example 2 of this application includes the following steps:
[0144] The above-mentioned perovskite precursor solution was uniformly drop-coated on the upper surface of the nickel oxide hole transport layer, with a spin coating speed of 1000 rpm and a spin coating time of 30 s. The film was rinsed with the anti-solvent anisole and annealed on a hot stage at 110 °C for 20 min to form a black perovskite phase FA 0.85 MA 0.1 Cs 0.05 PbI3 with a thickness of 700 nm. This black perovskite phase is the all-solid-state perovskite light absorption layer.
[0145] Then, a 1 mg / ml isopropanol solution of zinc p-toluenesulfonate was spin-coated on the all-solid-state perovskite light absorption layer and annealed on a hot stage at 110 °C for 10 min to obtain a zinc p-toluenesulfonate thin film with a thickness of 5 nm as the second passivation layer.
[0146] Example 3
[0147] The difference from Example 1 lies in: (4) Preparation of the light absorption layer and the passivation layer. Specifically, the preparation of the light absorption layer and the passivation layer in Example 3 of this application includes the following steps:
[0148] A 1 mg / ml isopropanol solution of zinc p-toluenesulfonate was spin-coated on the nickel oxide hole transport layer and annealed on a hot stage at 110 °C for 20 min to form a first passivation layer with a thickness of 5 nm. The annealing time and temperature in this step are represented by the first time and the first temperature respectively.
[0149] The above-mentioned perovskite precursor solution was uniformly drop-coated on the upper surface of the first passivation layer, with a spin coating speed of 1000 rpm and a spin coating time of 30 s. The film was rinsed with the anti-solvent anisole and annealed on a hot stage at 110 °C for 20 min to form a perovskite light absorption layer with a thickness of 700 nm. The annealing time and temperature in this step are represented by the second time and the second temperature respectively. The thicknesses of the first passivation layer and the perovskite light absorption layer obtained in this example are uniform, and the surface flatness is relatively high.
[0150] Example 4
[0151] The difference from Example 1 lies in: (4) Preparation of the light absorption layer and the passivation layer. Specifically, the preparation of the (4) light absorption layer and the passivation layer in Example 4 of the present application includes the following steps:
[0152] The perovskite precursor solution was uniformly drop-coated on the upper surface of the nickel oxide layer, with a spin-coating speed of 1000 rpm and a spin-coating time of 30 s. The film was rinsed with the antisolvent anisole to form an orange perovskite film with a thickness of 700 nm, without annealing. That is, the orange perovskite film is the first coated film;
[0153] A 1 mg / ml isopropanol solution of zinc p-toluenesulfonate was spin-coated on the first coated film and annealed on a hot plate at 110 °C for 20 min to obtain a perovskite layer with gradient passivation and a thickness of 700 nm and a second passivation layer with a thickness of 5 nm on the perovskite layer.
[0154] Example 5
[0155] The difference from Example 1 lies in (4) the preparation of the light absorption layer and the passivation layer. Specifically, the preparation of the (4) light absorption layer in Example 5 includes the following steps:
[0156] Zinc p-toluenesulfonate was added to the above perovskite precursor solution and stirred to dissolve. The mass concentration of zinc p-toluenesulfonate was 0.3 mg / ml.
[0157] The above perovskite precursor solution containing zinc p-toluenesulfonate was uniformly drop-coated on the upper surface of the nickel oxide hole transport layer, with a spin-coating speed of 1000 rpm and a spin-coating time of 30 s. The film was rinsed with the antisolvent anisole and annealed on a hot plate at 110 °C for 20 min to form a black perovskite phase FA with a thickness of 700 nm doped with zinc p-toluenesulfonate passivator in the bulk phase 0.85 MA 0.1 Cs 0.05 PbI3, that is, a light absorption layer doped with zinc p-toluenesulfonate passivator was obtained, and the distribution of the zinc p-toluenesulfonate passivator in the light absorption layer was relatively uniform. In this example, the surface flatness of the light absorption layer doped with zinc p-toluenesulfonate passivator was high.
[0158] The differences in process parameters between Examples 6 - 17 and Example 1 are specifically shown in Table 1, and the rest are the same as Example 1.
[0159] Comparative Example 1
[0160] The difference from Example 1 lies in (4) the preparation of the light absorption layer and the passivation layer. Specifically, the preparation of the (4) light absorption layer in Comparative Example 1 includes the following steps:
[0161] The above perovskite precursor solution was uniformly drop - coated on the upper surface of the nickel oxide hole - transporting layer. The spin - coating speed was 1000 rpm, and the spin - coating time was 30 s. Anti - solvent anisole was used to rinse the film, and annealing was carried out on a hot stage at 110 °C for 20 min to form a black perovskite phase FA 0.85 MA 0.1 Cs 0.05 PbI3, and this black perovskite phase is the all - solid - state perovskite light - absorbing layer.
[0162] Comparative Example 2
[0163] The difference from Example 1 is that in the preparation of the (4) light - absorbing layer and the passivation layer in Comparative Example 2, zinc acetylacetonate was used as the passivating agent.
[0164] Table 1 Process parameters of each example and comparative example.
[0165]
[0166] Note: Gradient doping + upper passivation means that part of the passivating agent is partially located in the light - absorbing layer, and the mass concentration of the passivating agent gradually decreases from top to bottom, and the other part of the passivating agent is located above the light - absorbing layer to form a second passivation layer; upper passivation means that the passivating agent is located above the light - absorbing layer to form a second passivation layer; lower passivation means that the passivating agent is located below the light - absorbing layer to form a first passivation layer; bulk doping means that the passivating agent is located in the light - absorbing layer, and the mass concentration of the passivating agent is the same or tends to be the same from top to bottom.
[0167] Table 2 Performance parameters of each example and comparative example.
[0168]
[0169] As shown in Table 1 and Table 2, based on Comparative Example 1, in Examples 1 - 5 of this application, by setting the passivating agent in different ways, the data of the power conversion efficiency, open - circuit voltage, fill factor, and short - circuit current of the solar cell are all improved. The data of the power conversion efficiency, open - circuit voltage, fill factor, and short - circuit current of Examples 1 - 17 of this application are all improved, indicating that when using zinc p - toluenesulfonate, zinc gluconate, zinc lactate, zinc bis(2,2,6,6 - tetramethyl - 3,5 - heptanedionate), zinc tryptophan, zinc lysine, or zinc glycine as the passivating agent to passivate the light - absorbing layer, the data of the power conversion efficiency, fill factor, and short - circuit current of the solar cell are all improved.
[0170] Based on Comparative Example 2, in Examples 1-17 of the present application, the passivation layer is formed by different setting methods of the passivation agent. The passivation agent is zinc p-toluenesulfonate, zinc gluconate, zinc lactate, zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate), zinc tryptophan, zinc lysine or zinc glycine to passivate the light absorption layer. The data of the power conversion efficiency, fill factor and short-circuit current of the solar cell are all improved, indicating that the effect of using zinc p-toluenesulfonate, zinc gluconate, zinc lactate, zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate), zinc tryptophan, zinc lysine or zinc glycine to passivate the light absorption layer in the present application is better than that of using zinc acetylacetonate as the passivation agent. The main reason is that, compared with zinc acetylacetonate, for the benzene ring electron-donating group in the p-benzenesulfonate ion of the zinc p-toluenesulfonate passivation agent and the sulfonate electron-withdrawing group, the electron cloud density of the whole ion is very large, which can effectively combine with the cations in the defects of the light absorption material in the light absorption layer to play a passivation role. For the zinc gluconate passivation agent, the gluconate group contains a polyhydroxy structure, which can form very strong hydrogen bonds with the cations of the light absorption material in the light absorption layer to play a passivation role; especially the polyhydroxy structure can form very strong hydrogen bonds with the cations at the A site of the ABX3 perovskite light absorption material to play a passivation role. The advantage of the lactate group in zinc lactate is that the electron cloud density of the ring structure is relatively large, and at the same time O - forms an oxygen-hydrogen bond with the light absorption material in the light absorption layer, especially forms an oxygen-hydrogen bond with the perovskite light absorption material, to play a passivation role. The advantage of the lysine root ion in zinc lysine is that multiple amino groups can passivate the cation defects of the light absorption material, especially can passivate the defects at the A site of the ABX3 perovskite light absorption material, and the O in the carboxylate group forms an oxygen-hydrogen bond with the light absorption material in the light absorption layer to play a passivation role. The advantage of the tryptophan root ion in zinc tryptophan is that the tryptophan root ion contains an indole electron-rich group, making the electron cloud density of the tryptophan root large, which can more effectively combine with the cations in the defects of the light absorption material in the light absorption layer to play a passivation role. The electron cloud density of the glycine root ion in zinc glycine is relatively large, which can effectively combine with the cations in the defects of the light absorption material in the light absorption layer to play a passivation role.
[0171] The above is only the implementation mode of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied to other related technical fields, shall be included in the patent protection scope of the present application by the same token.
Claims
1. A solar cell, characterized in that, Comprising: A light absorption layer; A passivator for passivating the light absorption layer, wherein the cation of the passivator comprises zinc ions, and the anion of the passivator comprises one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group.
2. The solar cell according to claim 1, characterized in that, The anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring comprises an anion containing a benzene ring and a sulfonic acid group on the benzene ring; and / or; In the anion containing a hydroxyl group and a carbonyl group, the hydroxyl group and the carbonyl group form a five-membered or six-membered ring with the zinc ion; or the number of hydroxyl groups in the anion containing a hydroxyl group and a carbonyl group is more than five.
3. The solar cell according to claim 1 or 2, characterized in that, The passivator comprises one or more of zinc p-toluenesulfonate, zinc o-toluenesulfonate, zinc m-toluenesulfonate, zinc p-ethylbenzenesulfonate, zinc gluconate, zinc lactate, zinc mannonate, zinc xylonate, zinc galactonate, zinc bis(2,2,6,6-tetramethyl-3,5-heptanedionate), zinc bis(3,3,7,7-tetramethyl-4,6-heptanedionate), zinc tryptophanate, zinc lysinate, and zinc glycinate.
4. The solar cell according to any one of claims 1 to 3, characterized in that, The passivator is disposed in the light absorption layer, or / and, The passivator is disposed on one side of the light absorption layer close to the light incident direction to form a first passivation layer; or / and, The passivator is disposed on one side of the light absorption layer close to the light exit direction to form a second passivation layer.
5. The solar cell according to any one of claims 1-3, characterized in that, The passivator is located in the light absorption layer, and the passivator is located on one side of the light absorption layer close to the light exit direction to form a second passivation layer; In the direction from the light exit direction to the light incident direction, the mass concentration gradient of the passivator in the light absorption layer decreases.
6. A method for preparing a solar cell, characterized in that, Comprising: Coating a light absorption material precursor solution on a substrate to form a first coating layer; Coating a passivator solution on the first coating layer and performing annealing treatment to form a light absorption layer and a second passivation layer; wherein, the passivator is used to passivate the light absorption layer, the cation of the passivator comprises zinc ions, and the anion of the passivator comprises one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group.
7. The preparation method according to claim 6, characterized in that, The coating of the light absorption material precursor solution on the substrate to form a first coating layer comprises: Coating a perovskite precursor solution on the substrate and annealing at a first temperature for a first time to form a first state layer; The coating of the passivator solution on the first coating layer and performing annealing treatment to form a second passivation layer comprises: Coating a passivator solution on the first state layer and performing annealing treatment at a second temperature for a second time to form a second passivation layer.
8. The preparation method according to claim 7, wherein, The second time is greater than the first time.
9. The preparation method according to claim 7 or 8, characterized in that, The first time is 10s - 120s, and the second time is 20min - 40min.
10. According to the preparation method according to any one of claims 7 - 9, characterized in that, The first temperature is 100°C - 150°C, and the second temperature is 100 - 150°C.
11. The method according to any one of claims 6-10, characterized in that, The mass concentration of the passivating agent solution is 0.3 mg / ml - 2 mg / ml.
12. A method for preparing a solar cell, characterized in that, Comprising: Coating the passivating agent solution on a substrate and performing annealing treatment to form a first passivation layer; wherein, the cation of the passivating agent includes zinc ions, the passivating agent is used to passivate the light absorption layer, the cation of the passivating agent includes zinc ions, and the anion of the passivating agent includes one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group; Coating a light absorption material precursor solution on the first passivation layer and then performing annealing treatment to form a light absorption layer.
13. The preparation method according to claim 12, wherein The temperature for the annealing treatment to form the first passivation layer is 100°C - 150°C, and the time is 20 min - 40 min; The temperature for the annealing treatment to form the light absorption layer is 100°C - 150°C, and the time is 10 min - 20 min.
14. A method for preparing a solar cell, characterized in that, Comprising: Mixing a passivating agent with a light absorption material precursor solution, coating the mixture on a substrate, and performing annealing treatment to form a light absorption layer doped with the passivating agent; wherein, the passivating agent is used to passivate the light absorption layer, the cation of the passivating agent includes zinc ions, and the anion of the passivating agent includes one or more of an anion containing a benzene ring and an electron-withdrawing substituent on the benzene ring, an anion containing two or more carbonyl groups and the number of carbon atoms in the carbon chain where the carbonyl group is located is more than seven, an anion containing an amino group and a carboxylate group, and an anion containing a hydroxyl group and a carbonyl group.
15. The preparation method according to claim 14, characterized in that, Before mixing the passivating agent with the light absorption material precursor solution and coating the mixture on a substrate, further comprising: Coating the passivating agent solution on a substrate and performing annealing treatment to form a first passivation layer; Mixing the passivating agent with the light absorption material precursor solution, coating the mixture on a substrate, and performing annealing treatment to form a light absorption layer doped with the passivating agent, comprising: Mixing the passivating agent with the light absorption material precursor solution, coating the mixture on the first passivation layer, and performing annealing treatment to form a light absorption layer doped with the passivating agent.
16. The preparation method according to claim 14 or 15, wherein After mixing the passivating agent with the light absorption material precursor solution, coating the mixture on a substrate, and performing annealing treatment to form a light absorption layer doped with the passivating agent, further comprising: Coating the passivating agent solution on the light absorption layer doped with the passivating agent and performing annealing treatment to form a second passivation layer.
17. An electrical device, characterized in that, Comprising the solar cell according to any one of claims 1 - 5, or the solar cell prepared by the method according to any one of claims 6 - 16.
18. A power generation device, characterized in that, Comprising the solar cell according to any one of claims 1 - 5, or the solar cell prepared by the method according to any one of claims 6 - 16.