Repair method and repair system of storage device

Abstract

The invention discloses a repairing method and a repairing system for a storage device, and relates to the technical field of storage. The repairing method comprises the following steps: determining a target signal line in a plurality of first signal lines of the storage array and a first number of invalid storage units corresponding to each first signal line group of the storage array; in response to a condition that a first number of failure storage units corresponding to a first signal line group exists in the target signal lines and is greater than a second number of first redundant signal lines of a second signal line group corresponding to the first signal line group, marking the target signal lines as first type signal lines; and replacing the first type of signal lines with second redundant signal lines of the redundant storage array to realize repair. The accuracy and speed of obtaining the first type of signal lines are high, and the repair rate and the repair efficiency of the failed storage unit are improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of storage technologies, and in particular, to a repair method for a storage device and a repair system for a storage device. Background Art

[0002] As a storage device, a Dynamic Random Access Memory (DRAM) chip has been widely used in devices such as mobile phones, computers, and servers due to its advantages of simple structure, high integration, and low power consumption, and has played an important role in the consumer electronics field. In the manufacturing process of DRAM chips, failed memory cells may appear in the memory array of the DRAM chip. To address this situation, a part of redundant memory arrays are reserved during the design of the DRAM chip. The redundant memory cells in the redundant memory arrays are used to replace the failed memory cells in the memory array to ensure the normal use of the DRAM chip.

[0003] Typically, in the process of using redundant memory cells to repair failed memory cells, redundant word lines or redundant bit lines of the redundant memory array are used to replace the word lines or bit lines of the memory array with failed memory cells, so as to realize the repair of the failed memory cells in the memory array by the redundant memory cells. By improving the accuracy of determining the word lines that need to be replaced by redundant word lines, the repair rate and repair efficiency of the failed memory cells can be improved. Summary of the Invention

[0004] The embodiments of the present application provide a repair method for a storage device and a repair system for a storage device, which can optimize the determination of the first signal lines that need to be replaced by the second redundant signal lines, improve the accuracy of determining the first signal lines that need to be replaced by the second redundant signal lines, and improve the repair rate of failed memory cells.

[0005] A repair method for a storage device, the storage device including a memory array and a redundant memory array; the repair method includes:

[0006] Determine the first quantity of the failed memory cells corresponding to the target signal line among the multiple first signal lines of the memory array and each first signal line group of the memory array; the first signal lines extend along a first direction, the multiple first signal lines are arranged at intervals along a second direction, and the second direction intersects the first direction; multiple first signal line groups are respectively and correspondingly arranged with multiple second signal line groups of the redundant memory array; the multiple second signal lines of the first signal line group are arranged at intervals along the first direction and extend along the second direction; the multiple first redundant signal lines of the second signal line group are parallel to the second signal lines;

[0007] In response to the fact that the first quantity of failed storage units corresponding to the first signal line group on the target signal line is greater than the second quantity of the first redundant signal lines of the first signal line group corresponding to the second signal line group, mark the target signal line as a first type of signal line;

[0008] Use the second redundant signal lines of the redundant storage array to replace the first type of signal line to achieve repair.

[0009] In one embodiment, the determining the target signal line among the multiple first signal lines of the storage array and the first quantity of failed storage units corresponding to each first signal line group of the storage array includes:

[0010] Determine the third quantity of the failed storage units on each of the first signal lines;

[0011] In response to the fact that the third quantity of the failed storage units on the first signal line is less than or equal to the fourth quantity of the first redundant signal lines of the redundant storage array, use the first signal line as the target signal line;

[0012] Determine the first quantity of the failed storage units corresponding to each first signal line group on the target signal line.

[0013] In one embodiment, the in response to the fact that the third quantity of the failed storage units on the first signal line is less than or equal to the fourth quantity of the first redundant signal lines of the redundant storage array, use the first signal line as the target signal line includes:

[0014] In response to the fact that the third quantity of the failed storage units on the first signal line is less than or equal to the fourth quantity of the first redundant signal lines of the redundant storage array, use the first signal line as a first intermediate target signal line;

[0015] In response to the fact that the third quantity of the failed storage units on the first intermediate target signal line is greater than the second quantity of the first redundant signal lines of each second signal line group, use the first intermediate target signal line as the target signal line.

[0016] In one embodiment, the in response to the fact that the third quantity of the failed storage units on the first signal line is less than the fourth quantity of the first redundant signal lines of the redundant storage array, use the first signal line as the target signal line includes:

[0017] In response to the fact that the third quantity of the failed storage units on the first signal line is greater than the second quantity of the first redundant signal lines of each second signal line group, use the first signal line as a second intermediate target signal line;

[0018] In response to the third quantity of the failed storage units on the second intermediate target signal line being less than or equal to the fourth quantity of the first redundant signal lines of the redundant storage array, the second intermediate target signal line is used as the target signal line.

[0019] In one embodiment, determining the first quantity of the failed storage units corresponding to the target signal line and each first signal line group of the storage array among a plurality of first signal lines of the storage array includes:

[0020] Determining the third quantity of the failed storage units on each of the first signal lines;

[0021] Selecting the first signal lines as the target signal lines in sequence according to the order of the third quantity of the failed storage units on each of the first signal lines from large to small;

[0022] Determining the first quantity of the failed storage units corresponding to each first signal line group on the target signal line.

[0023] In one embodiment, the repair method of the storage device further includes:

[0024] Determining the third quantity of the failed storage units on each of the first signal lines;

[0025] In response to the third quantity of the failed storage units on the first signal line being greater than the fourth quantity of the first redundant signal lines of the redundant storage array, directly marking the first signal line as the first type of signal line.

[0026] In one embodiment, in response to the first quantity of the failed storage units corresponding to a first signal line group on the target signal line being greater than the second quantity of the first redundant signal lines corresponding to the first signal line group and the second signal line group, marking the target signal line as the first type of signal line includes:

[0027] Sequentially obtaining the first quantity of the failed storage units corresponding to the target signal line and each first signal line group;

[0028] In response to the first quantity of the failed storage units corresponding to any one of the first signal line groups being greater than the second quantity, setting the flag bit of the signal line address corresponding to the target signal line in the failure repair array to mark the first type of signal line.

[0029] In one embodiment, the first signal line is a word line, the second signal line is a bit line, the first redundant signal line is a redundant bit line, and the second redundant signal line is a redundant word line.

[0030] A repair system for a storage device, the storage device including a storage array and a redundant storage array, the repair system including:

[0031] An acquisition module, configured to determine a first quantity of failed storage units corresponding to a target signal line among a plurality of first signal lines of the storage array and each first signal line group of the storage array; the first signal lines extend along a first direction, the plurality of first signal lines are arranged at intervals along a second direction, and the second direction intersects the first direction; a plurality of the first signal line groups are respectively arranged corresponding to a plurality of second signal line groups of the redundant storage array; a plurality of second signal lines of the first signal line group are arranged at intervals along the first direction and extend along the second direction; a plurality of first redundant signal lines of the second signal line group are parallel to the second signal lines;

[0032] An operation module, connected to the acquisition module, configured to, in response to the first quantity of failed storage units corresponding to a first signal line group on the target signal line being greater than a second quantity of first redundant signal lines of the second signal line group corresponding to the first signal line group, mark the target signal line as a first type of signal line;

[0033] A repair module, connected to the operation module, configured to use a second redundant signal line of the redundant storage array to replace the first type of signal line to achieve repair; the second redundant signal line is parallel to the first signal line.

[0034] A repair system for a storage device, including:

[0035] A main control device;

[0036] A storage device, connected to the main control device, the storage device including:

[0037] A storage die, including at least one storage module, the storage module including a storage array and a redundant storage array;

[0038] Wherein, the main control device is connected to the storage die, configured to obtain failure storage information of failed storage units of the storage array, and execute the repair method of the storage device as described above according to the failure storage information to generate repair information, the repair information including corresponding information of the second redundant signal line and the first type of signal line of the redundant storage array.

[0039] In one embodiment, the storage device further includes:

[0040] A control die, respectively connected to the main control device and the storage die, configured to generate a repair signal according to the repair information;

[0041] The storage die is used to replace the first type of signal lines with the second redundant signal lines of the redundant storage array according to the repair signal to achieve repair.

[0042] In one embodiment, the storage die includes a plurality of storage groups, each storage group includes a plurality of the storage modules, and the control die includes: a redundant loading device and a plurality of control devices. The redundant loading device is respectively connected to the main control device and the plurality of control devices, and the plurality of control devices are respectively connected to the plurality of storage groups correspondingly;

[0043] The redundant loading device is used to generate a plurality of repair control signals according to the repair information; the plurality of repair control signals respectively correspond to the plurality of control devices;

[0044] The control device is used to output corresponding repair signals to the plurality of storage modules connected thereto according to the repair control signal output by the connected redundant loading device.

[0045] In the repair method of the above storage device, when the first quantity of the failed storage units corresponding to the target signal line and each first signal line group is greater than the second quantity of the first redundant signal lines of the second signal line group corresponding to the first signal line group, it is determined that the target signal line is the first type of signal line that needs to be replaced by the second redundant signal line. The accuracy of the first type of signal line is high and the speed is fast, which improves the repair rate and repair efficiency of the failed storage units.

[0046] In the repair system of the above storage device, when the first quantity of the failed storage units corresponding to the target signal line and each first signal line group is greater than the second quantity of the first redundant signal lines of the second signal line group corresponding to the first signal line group, the arithmetic module determines that the target signal line is the first type of signal line that needs to be replaced by the second redundant signal line. The accuracy of the first type of signal line is high and the speed is fast, which improves the rate and efficiency of the repair module for repairing the failed storage units.

[0047] In the repair system of the above storage device, during the process that the main control device generates the repair information, when the first quantity of the failed storage units corresponding to the target signal line and each first signal line group is greater than the second quantity of the first redundant signal lines of the second signal line group corresponding to the first signal line group, it is determined that the target signal line is the first type of signal line that needs to be replaced by the second redundant signal line. The accuracy of the first type of signal line is high and the speed is fast, which improves the repair rate and repair efficiency of the failed storage units. Description of the Drawings

[0048] To more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the following will briefly introduce the drawings required for use in the description of the embodiments or the related art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0049] Figure 1 One of the schematic structural diagrams of the storage device in the embodiment of the present application;

[0050] Figure 2 One of the schematic flowcharts of the repair method of the storage device in the embodiment of the present application;

[0051] Figure 3 One of the corresponding schematic diagrams of the first signal line group and the second signal line group of the storage device in the embodiment of the present disclosure;

[0052] Figure 4 One of the schematic structural diagrams of the repair system of the storage device in the embodiment of the present disclosure;

[0053] Figure 5 One of the schematic structural diagrams of the repair system of the storage device in the embodiment of the present disclosure;

[0054] Figure 6 One of the schematic structural diagrams of the repair system of the storage device in the embodiment of the present disclosure;

[0055] Figure 7 One of the schematic structural diagrams of the repair system of the storage device in the embodiment of the present disclosure;

[0056] Figure 8 One of the schematic structural diagrams of the repair system of the storage device in the embodiment of the present disclosure;

[0057] Figure 9 One of the schematic structural diagrams of the repair system of the storage device in the embodiment of the present disclosure.

[0058] Explanation of the reference numerals:

[0059] The first signal line group 10; the second signal line group 20; the acquisition module 102; the operation module 104; the repair module 106; the main control device 202; the storage device 204; the storage die 302; the control die 304; the storage group 400; the storage module 402; the redundant loading device 404; the control device 406. Detailed implementation manners

[0060] To facilitate the understanding of the embodiments of the present application, the embodiments of the present application will be described more comprehensively below with reference to the relevant drawings. The preferred embodiments of the embodiments of the present application are given in the drawings. However, the embodiments of the present application can be implemented in many different forms and are not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the embodiments of the present application more thorough and comprehensive.

[0061] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which the embodiments of the present application belong. The terms used in the description of the embodiments of the present application herein are only for the purpose of describing specific embodiments and are not intended to limit the embodiments of the present application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0062] In the description of the embodiments of the present application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the embodiments of the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the embodiments of the present application.

[0063] It can be understood that the terms "first", "second", etc. used in the present application can be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of the present application, the first signal line can be called the second signal line, and similarly, the second signal line can be called the first signal line. Both the first signal line and the second signal line are signal lines, but they are not the same signal line.

[0064] In addition, the terms "first", "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first", "second" can explicitly or implicitly include at least one of such features. In the description of the present application, "a plurality" means at least two, such as two, three, etc., unless otherwise specifically defined. In the description of the present application, "several" means at least one, such as one, two, etc., unless otherwise specifically defined.

[0065] Figure 1 is one of the structural schematic diagrams of the storage device in the embodiments of the present application. Refer to Figure 1, the storage device includes a storage array and a redundant storage array; wherein, the storage array includes word lines (WL) and bit lines (BL), one of the word lines and the bit lines extends along a first direction X, and the other extends along a second direction Y intersecting the first direction X, and the storage cells are located at the intersection positions of the word lines and the bit lines on the plane (for the sake of illustration, Figure 1 is shown by black dots, and this intersection position is a virtual position), and the failed storage cells in the storage array are shown by " " in the figure; the redundant storage array includes redundant word lines (YWL) and redundant bit lines (YBL), the redundant word lines and the word lines extend in the same direction, and the redundant bit lines and the bit lines extend in the same direction, Figure 1 the redundant storage cells in it are located at the intersection positions of the redundant word lines and the bit lines on the plane, and the intersection positions of the redundant bit lines and the word lines on the plane ( Figure 1 is shown by black dots, and this intersection position is a virtual position), and the redundant storage cells in the redundant storage array are used to repair the failed storage cells in the storage array. As an example, Figure 1 in it, the word lines extend along the first direction X, multiple word lines are arranged at intervals along the second direction Y, the bit lines extend along the second direction Y, and multiple bit lines are arranged at intervals along the first direction X. Further, the first direction X is perpendicular to the second direction Y. As an example, Figure 1 it is exemplified that the storage array includes 8 word lines WL0 to WL7 and 8 bit lines BL0 to BL7, and the redundant storage array includes 3 redundant word lines YWL0 to YWL2 and 4 redundant bit lines YBL0 to YBL3.

[0066] It can be understood that when the redundant storage cells in the redundant storage array repair the failed storage cells in the storage array, the signal line addresses of the word lines and / or the bit lines are mapped to the redundant signal line addresses of the redundant word lines and / or the redundant word lines, so as to realize the repair of the failed storage cells in the storage array by the redundant storage cells in the redundant storage array.

[0067] In the process of using redundant storage cells to repair failed storage cells, it is found that even when the number of failed storage cells on the word line WLx of the storage array is less than the number of redundant bit lines in the redundant storage array, there is also a problem that the bit lines corresponding to the failed storage cells on the word line WLx cannot be replaced by the redundant bit lines in the redundant array to repair the failed storage cells on the word line WLx. How to accurately determine the word lines that need to be replaced by the redundant word lines in the redundant array has become an urgent problem to be solved.

[0068] Figure 2 This is one of the schematic flowcharts of the repair method of the storage device in the embodiments of the present application. Refer to Figure 2, To solve the above problems, in this embodiment, a repair method for a storage device is provided. The storage device includes a storage array and a redundant storage array; the repair method includes:

[0069] S102, determining the first quantity of failed storage units corresponding to the target signal line among the multiple first signal lines of the storage array and each first signal line group of the storage array.

[0070] The storage array includes multiple first signal lines and multiple first signal line groups, and each first signal line group includes multiple second signal lines; the redundant storage array includes multiple second signal line groups and multiple second redundant signal lines, and each second signal line group includes multiple first redundant signal lines. The multiple first signal line groups and the multiple second signal line groups are correspondingly arranged. The first signal lines extend along a first direction, the multiple first signal lines are arranged at intervals along a second direction, the second signal lines extend along the second direction, the multiple second signal lines are arranged at intervals along the first direction, the first redundant signal lines are parallel to the second signal lines, and the second redundant signal lines are parallel to the first signal lines; wherein, the second direction intersects the first direction.

[0071] It can be understood that the number of second signal lines in the first signal line group is greater than the number of first redundant signal lines in the second signal line group. As an example, the number of second signal lines in each first signal line group is the same, and the number of first redundant signal lines in each second signal line group is the same.

[0072] The multiple first signal line groups and the multiple second signal line groups are correspondingly arranged, which can be understood as that the multiple first redundant signal line addresses of the second signal line group correspond to the multiple second signal line addresses of the first signal line group. The first redundant signal line address is the address of the first redundant signal line, and the second signal line address is the address of the second signal line. The first redundant signal lines of the second signal line group are used to replace any second signal line with a failed storage unit in the corresponding first signal line group to repair the failed storage unit on the second signal line.

[0073] During the process of the first redundant signal line replacing the second signal line with a failed storage unit in the corresponding first signal line group, the second signal lines with failed storage units can be replaced in sequence according to the arrangement direction of the second signal line addresses of the second signal lines in the first signal line group, or can be replaced in sequence according to the quantity of failed storage units on the second signal lines in the first signal line group from large to small.

[0074] It can be understood that one of the first signal line and the second signal line is a word line, and the other is a bit line. The redundant signal line corresponding to the word line is a redundant word line, and the redundant signal line corresponding to the bit line is a redundant bit line.

[0075] Taking the first signal line as the word line WL, the second signal line as the bit line BL, the first redundant signal line as the redundant bit line YBL, and the second redundant signal line as the redundant word line YWL as an example, the repair method of the storage device of the present application will be described by way of example.

[0076] Refer to Figure 1 , the storage array schematically includes 2 first signal line groups 10, and each first signal line group 10 includes a plurality of second signal lines. Figure 1 In Figure 1 , each first signal line group 10 schematically includes 4 second signal lines. For the convenience of description, the 2 first signal line groups 10 are respectively the A1 group and the A2 group. The A1 group includes the second signal line BL0 to the second signal line BL3, and the A2 group includes the second signal line BL4 to the second signal line BL7. The redundant storage array schematically includes 2 second signal line groups 20, and each second signal line group 20 includes a plurality of first redundant signal lines.

[0077] Figure 3 is one of the corresponding schematic diagrams of the first signal line group and the second signal line group of the storage device in the embodiment of the present disclosure. Refer to Figure 3 , Figure 3The corresponding storage array includes n first signal lines WL0 to WLn-1 and 16 first signal line groups 10. Each first signal line group 10 includes 64 second signal lines. For ease of description, the 16 first signal line groups 10 are respectively the A0 group, the A2 group, ……, the A15 group. The A0 group includes second signal lines BL0 to BL63, the A1 group includes second signal lines BL64 to BL127, ……, the A15 group includes second signal lines BL960 to BL1023. The redundant storage array includes m second redundant signal lines YWL0 to YWLm-1 and 16 groups of second signal line groups 20. Each second signal line group 20 includes 3 first redundant signal lines. For ease of description, the 16 second signal line groups 20 are respectively the B0 group, the B1 group, ……, the B15 group. The B0 group includes first redundant signal lines YBL0 to YBL2, the B1 group includes first redundant signal lines YBL3 to YBL5, ……, the B15 group includes first redundant signal lines YBL45 to YBL47; the 16 first signal line groups 10 and the 16 second signal line groups 20 are respectively arranged in correspondence; as an example, the A0 group and the B0 group are arranged in correspondence, the A1 group and the B1 group are arranged in correspondence, ……, the A15 group and the B15 group are arranged in correspondence. Figure 3 According to the corresponding relationship between the first signal line group 10 and the second signal line group 20, a plurality of second signal lines of the first signal line group 10 and a plurality of first redundant signal lines of the corresponding second signal line group 20 are arranged adjacent to each other. However, it can be understood that in the physical structure of the storage device, the second signal lines of the A0 group and the second signal lines of the A1 group are adjacent.

[0078] The storage array includes storage cells (cells). Data writing and data reading are performed on each storage cell of the storage array. When the read data and the written data are consistent, the storage cell is considered a normal storage cell, that is, a normal storage cell; when the read data and the written data are inconsistent, the storage cell is considered a failed storage cell, that is, a failed storage cell. It can be understood that a failed storage cell is an abnormal storage cell to be repaired.

[0079] Select a target signal line from the multiple first signal lines WL0 to WLn-1 of the storage array, and determine the first quantity ebit_cnt of the failed storage cells corresponding to the target signal line and each first signal line group (A0 group to A15 group). The multiple first quantities (ebit_cnt0 to ebit_cnt15) and the multiple first signal line groups (A0 group to A15 group) are in one-to-one correspondence. The first quantity ebit_cnt of the failed storage cells corresponding to a first signal line group (one of the A0 group to A15 group) can be understood as the number of failed storage cells that are simultaneously connected to the target signal line and the second signal lines of the first signal line group (one of the A0 group to A15 group).

[0080] After writing data into the storage units on the target signal line, read the data in the storage units connected to the multiple second signal lines on the target signal line and any one of the first signal line groups (one of group A0 to group A15) respectively, and count the storage units in which the read data is inconsistent with the written data. The value obtained by counting is the first quantity ebit_cnt of the failed storage units corresponding to the target signal line and this first signal line group (one of group A0 to group A15). According to the above method, determine the first quantity ebit_cnt of the failed storage units corresponding to the target signal line and each first signal line group respectively.

[0081] See Figure 3 , select a target signal line (such as word line WL3) from the n word lines WL0 to WLn-1 of the storage array, and determine the first quantity ebit_cnt of the failed storage units corresponding to the word line WL3 and each first signal line group (group A0 to group A15). The 16 first quantities ebit_cnt correspond one by one to the 16 first signal line groups, that is, the first quantity ebit_cnt0 corresponds to group A0, the first quantity ebit_cnt1 corresponds to group A1, …… the first quantity ebit_cnt15 corresponds to group A15. The first quantity ebit_cnt0 corresponding to group A0 is the number of failed storage units on the word line WL3 and connected to the bit lines BL0 to BL63 of group A0.

[0082] As an example, read the data of the 64 storage units corresponding to the word line WL3 and group A0 in sequence, count the storage units in which the read data is inconsistent with the written data, and the value obtained by counting is the first quantity ebit_cnt0 of the failed storage units corresponding to the word line WL3 and group A0. Determine the first quantity ebit_cnt1 to the first quantity ebit_cnt15 of the failed storage units corresponding to the word line WL3 and groups A1 to A15 in sequence.

[0083] S104, in response to the first quantity of the failed storage units corresponding to the first signal line group on the target signal line being greater than the second quantity of the first redundant signal lines of the second signal line group corresponding to the first signal line group, mark the target signal line as the first type of signal line.

[0084] Compare the first quantity ebit_cnt of the target signal line corresponding to multiple first signal line groups and the second quantity of the first redundant signal lines of the second signal line groups corresponding to each first signal line group respectively. If there exists a first quantity ebit_cnt of a first signal line group that is greater than the second quantity of the first redundant signal lines of the second signal line group corresponding to the first signal line group, it is determined that it is impossible to use the first redundant signal lines to replace the second signal lines to repair all the failed memory cells on the target signal line, and the target signal line is marked as a first type of signal line; where the second quantity is the quantity of the first redundant signal lines of the second signal line group. Take Figure 3 as an example. The second quantity of the first redundant signal lines of groups B0 to B15 is 3. Taking the word line WL3 as the target signal line, when the first quantity ebit_cnt0 of the failed memory cells corresponding to group A0 on the target signal line (word line WL3) is 4 and the first quantity ebit_cnt1 of the failed memory cells corresponding to group A1 on the target signal line (word line WL3) is 1, compare the first quantity ebit_cnt0 (4) of the failed memory cells corresponding to group A0 and the second quantity (3) of the first redundant signal lines of group B0 corresponding to group A0. When the first quantity ebit_cnt0 (4) is greater than the second quantity (3), it is determined that there exists a first quantity of the failed memory cells corresponding to a first signal line group on the target signal line (word line WL3) that is greater than the second quantity of the second redundant signal lines of the second signal line group corresponding to the first signal line group, that is, there exists a first quantity ebit_cnt0 (4) of the failed memory cells corresponding to group A0 on the target signal line (word line WL3) that is greater than the second quantity (3) of the first redundant signal lines of group B0 corresponding to group A0, and the target signal line (word line WL3) is marked as a first type of signal line. The first type of signal line is the first signal line that needs to use the second redundant signal lines to replace to repair the failed memory cells located thereon.

[0085] It can be understood that if the first quantity ebit_cnt0 of the failed memory cells corresponding to group A0 is less than or equal to the second quantity of the first redundant signal lines of group B0, continue to compare the first quantity ebit_cnt of the failed memory cells corresponding to the remaining first signal line groups and the second quantity of the first redundant signal lines of the second signal line groups corresponding to each first signal line group until there appears a first quantity ebit_cntx of the failed memory cells corresponding to group Ax that is greater than the second quantity of the first redundant signal lines of group Bx corresponding to group Ax, or until after comparing the first quantity ebit_cnt15 of the failed memory cells corresponding to group A15 and the second quantity of the first redundant signal lines of group B15 corresponding to group A15, the judgment of the target signal line (word line WL3) ends.

[0086] Exemplarily, the foregoing marks can be recorded by means of a single failure repair array (ebit_cnt_main_row). Table 1 shows the marks WL_Flag corresponding to the signal line addresses of the respective first signal lines in the failure repair array (ebit_cnt_main_row). For example, the memory array includes n first signal lines WL0 to WLn-1 as shown in Figure 3 The failure repair array uses WL0 to WLn-1 to represent the signal line addresses of the corresponding first signal lines. The failure repair array (ebit_cnt_main_row) has n flag bits for n marks WL_Flag corresponding to the signal line addresses of the first signal lines WL0 to the first signal line WLn-1. When the first quantity ebit_cnt0(4) of the failed memory cells corresponding to the first signal line group (e.g., group A0) on the target signal line (word line WL3) is greater than the second quantity (3) of the first redundant signal lines included in group B0 corresponding to group A0, the flag bit of the mark WL_Flag corresponding to the signal line address WL3 of the target signal line (word line WL3) is set (e.g., changed from 0 to 1) to mark the target signal line (word line WL3) as a first type of signal line.

[0087] Table 1

[0088]

[0089] S106. Replace the first type of signal line with the second redundant signal line of the redundant memory array to achieve repair.

[0090] Replace the first type of signal line with any one of the second redundant signal lines of the redundant memory array to repair the failed memory cells on the first type of signal line.

[0091] Taking Figure 3 as an example, use one of the second redundant signal lines YWL0 to YWLm-1 of the second redundant signal line to replace the word line (e.g., word line WL3) marked as the first type of signal line in step S104 to achieve the repair of the failed memory cells on the word line WL3.

[0092] It can be understood that after replacing the first type of signal line with the second redundant signal line of the redundant memory array, the number of failed memory cells on the first type of signal line is cleared, that is, the third quantity ebit_cnt_row3 of the failed memory cells on the first type of signal line (e.g., word line WL3) is cleared. The third quantity ebit_cnt_row can be understood as the total number of failed memory cells on a first signal line, that is, the sum of the first quantities (ebit_cnt0 to ebit_cnt15) of the failed memory cells corresponding to the first signal line (e.g., word line WL3) and the respective first signal line groups (group A0 to group A15) of the memory array.

[0093] Taking Figure 3 as an example, after replacing the word line (e.g., WL3) marked as the first type of signal line in step S104 with the second redundant signal line (e.g., YWL0), the third quantity ebit_cnt_row3 of the failed storage units on the word line WL3 is cleared.

[0094] It can be understood that the second quantity of the first redundant signal lines of the second signal line group 20 is the quantity of the first redundant signal lines in the second signal line group 20 that have not been used to replace the second signal lines. For example, when there are failed storage units corresponding to the first signal line WL0 and the first signal line WL1 on the second signal line BL1 in the A0 group of Figure 3 , after replacing the second signal line BL1 with the first redundant signal line YBL0 corresponding to the B0 group corresponding to the A0 group, the third quantities ebit_cnt_row0 and ebit_cnt_row1 of the failed storage units corresponding to the first signal line WL0 and the first signal line WL1 both decrease by 1, and the second quantity of the first redundant signal lines of the B0 group corresponding to the A0 group also decreases by 1 correspondingly. In the above repair method of the storage device, among the first quantities (ebit_cnt0 to ebit_cnt15) of the failed storage units corresponding to each first signal line group (A0 group to A15 group) on the target signal line, when there is at least one first quantity of the first signal line group greater than the second quantity of the first redundant signal lines of the corresponding second signal line group, it is determined that the target signal line is the first type of signal line that needs to be replaced with the second redundant signal line, obtaining a high accuracy and fast speed of the first type of signal line, and improving the repair rate and repair efficiency of the failed storage units.

[0095] In some embodiments, the "determining the first quantity of the failed storage units corresponding to the target signal line among the multiple first signal lines of the storage array and each first signal line group of the storage array" in the foregoing step S102 further includes: S1021: determining the third quantity of the failed storage units on each first signal line; S1022: in response to the third quantity of the failed storage units on the first signal line being less than or equal to the fourth quantity of the first redundant signal lines of the redundant storage array, taking the first signal line as the target signal line; S1024: determining the first quantity of the failed storage units corresponding to each first signal line group on the target signal line.

[0096] S1021: For each memory cell on the first signal line, perform data writing and reading, and count the number of memory cells on the first signal line where the read data is inconsistent with the written data. This is the third quantity ebit_cnt_row of the failed memory cells on the first signal line. Repeat the above steps to sequentially obtain the third quantities (ebit_cnt_row0 to ebit_cnt_rown-1) of the failed memory cells on each first signal line (WL0 to WLn-1).

[0097] S1022: Obtain the total number of the first redundant signal lines of the redundant memory array, that is, the fourth quantity of the first redundant signal lines of the redundant memory array. It can be understood that the fourth quantity is the sum of the second quantities of the first redundant signal lines of each second signal line group. Compare the third quantity ebit_cnt_row of the failed memory cells on the first signal line with the fourth quantity. When the third quantity ebit_cnt_row is less than or equal to the fourth quantity, regard the first signal line as the target signal line.

[0098] S1024: For the specific steps of determining the first quantity of the failed memory cells corresponding to each first signal line group on the target signal line, refer to the method of determining the first quantity of the failed memory cells corresponding to the target signal line and each first signal line group in the above S102, which will not be elaborated here.

[0099] Take Figure 3 as an example. For the 1024 memory cells on the word line WL0, perform data writing and reading, and count the number of memory cells where the read data is different from the written data. This is the third quantity ebit_cnt_row0 of the failed memory cells on the word line WL0, that is, the third quantity ebit_cnt_row0 is the total number of the failed memory cells on the word line WL0. Sequentially determine the third quantities ebit_cnt_row1 to ebit_cnt_rown-1 of the failed memory cells on the word lines WL1 to WLn-1. When the third quantity ebit_cnt_rowx of the failed memory cells on the word line WLx is less than or equal to the fourth quantity, determine the word line WLx as the target signal line (it is necessary to further confirm whether it is the first type of signal line). Among them, the fourth quantity is the total number of the first redundant signal lines in the redundant memory array, that is, the fourth quantity is the sum of the second quantities of the first redundant signal lines of each second signal line group, Figure 3 and the fourth quantity of the first redundant signal lines in the redundant memory array is, for example, 48. When the third quantity ebit_cnt_rowx of the failed memory cells on the word line WLx is less than or equal to the fourth quantity (for example, 48), regard the word line WLx as the target signal line, that is, select the target signal line from the first signal lines where the quantity of the failed memory cells ebit_cnt_rowx ≤ 48.

[0100] Determine the first quantity ebit_cnt0 of failed memory cells connected to the target signal line (word line WLx) and multiple second signal lines (bit lines BL0 to BL63) in group A0; determine the first quantity ebit_cnt1 of failed memory cells connected to the target signal line (word line WLx) and multiple second signal lines (bit lines BL64 to BL127) in group A1, ……, determine the first quantity ebit_cnt15 of failed memory cells connected to the target signal line (word line WLx) and multiple second signal lines (bit lines BL960 to BL1023) in group A15, that is, determine the first quantity ebit_cnt (the first quantity ebit_cnt0 to the first quantity ebit_cnt15) of failed memory cells corresponding to each first signal line group for the target signal line (word line WLx).

[0101] By comparing the third quantity of failed memory cells on the first signal line and the fourth quantity of the first redundant signal lines of the redundant memory array, the first signal line with the third quantity less than or equal to the fourth quantity is taken as the target signal line, removing the first signal lines that can be directly determined as the first type of signal lines among the first signal lines, that is, removing the first signal lines that do not need to be used as the target signal line, obtaining the first signal lines that need to be further determined whether they need to be used as the first type of signal lines, reducing the number of first signal lines used as the target signal line, improving the determination rate of the first type of signal lines, and improving the repair rate and repair efficiency of failed memory cells.

[0102] In some embodiments, S1022: In response to the third quantity of failed memory cells on the first signal line being less than or equal to the fourth quantity of the first redundant signal lines of the redundant memory array, taking the first signal line as the target signal line further includes: in response to the third quantity of failed memory cells on the first signal line being less than or equal to the fourth quantity of the first redundant signal lines of the redundant memory array, taking the first signal line as the first intermediate target signal line (S10221); in response to the third quantity of failed memory cells on the first intermediate target signal line being greater than the second quantity of the first redundant signal lines of each second signal line group, taking the first intermediate target signal line as the target signal line (S10222).

[0103] S10221: Compare the third quantity ebit_cnt_row of failed memory cells on the first signal line and the fourth quantity of the first redundant signal lines of the redundant memory array. In the case where the third quantity ebit_cnt_row is less than or equal to the fourth quantity, take the first signal line as the first intermediate signal line.

[0104] By comparing the third quantity ebit_cnt_row of failed memory cells on the first signal line with the fourth quantity of the first redundant signal line of the redundant memory array, the first signal lines that can be directly determined as the first type of signal lines in the first signal line are removed, and the first signal lines that need to be further determined whether to be the first type of signal lines are obtained, which are used as the first intermediate signal lines, initially reducing the quantity of the first signal lines that are target signal lines.

[0105] S10222: Compare the third quantity ebit_cnt_row of failed memory cells on the first intermediate signal line with the second quantity of the first redundant signal line of each second signal line group. When the third quantity ebit_cnt_row of failed memory cells on the first intermediate signal line is greater than the second quantity of the first redundant signal line of each second signal line group (for example, each second quantity is equal to 3, or the minimum value of the second quantities), the first intermediate target signal line is used as the target signal line.

[0106] By comparing the third quantity ebit_cnt_row of failed memory cells on the first intermediate target signal line with the second quantity of the first redundant signal line of each second signal line group, the first signal lines in the first intermediate target signal line that can be used to replace the failed memory cells with the first redundant signal line are removed, further reducing the quantity of the first signal lines that are target signal lines, and improving the determination rate of the first type of signal lines.

[0107] Take Figure 3 as an example. Compare the third quantity ebit_cnt_rowx of failed memory cells on the word line WLx with the fourth quantity (48). When the third quantity ebit_cnt_rowx is less than or equal to the fourth quantity (48), the word line WLx is used as the first intermediate target signal line, that is, the first signal lines with the quantity of failed memory cells less than or equal to the fourth quantity (48) are selected as the first intermediate target signal lines. When the third quantity ebit_cnt_rowx of failed memory cells on the word line WLx (the first intermediate target signal line) is less than or equal to the second quantity (3) of the first redundant signal line of each second signal line group, it is determined that the failed memory cells on the word line WLx (the first intermediate target signal line) can be repaired by replacing the second signal line with the first redundant signal line, and the word line WLx does not need to be used as the target signal line to determine whether it is the first type of signal line. When the third quantity ebit_cnt_rowx of failed memory cells on the word line WLx (the first intermediate target signal line) is greater than the second quantity (3) of the first redundant signal line of each second signal line group, it is determined that further judgment needs to be made on the word line WLx (the first intermediate target signal line), and it is used as the target signal line.

[0108] In some embodiments, S1022: in response to the third quantity of failed storage units on the first signal line being less than the fourth quantity of the first redundant signal lines of the redundant storage array, taking the first signal line as the target signal line further includes: in response to the third quantity of failed storage units on the first signal line being greater than the second quantity of the first redundant signal lines of each second signal line group, taking the first signal line as the second intermediate target signal line (S10223); in response to the third quantity of failed storage units on the second intermediate target signal line being less than or equal to the fourth quantity of the first redundant signal lines of the redundant storage array, taking the second intermediate target signal line as the target signal line (S10224).

[0109] S10223: Compare the third quantity ebit_cnt_row of failed storage units on the first signal line with the second quantity of the first redundant signal lines of each second signal line group. When the third quantity ebit_cnt_row of failed storage units on the first signal line is greater than the second quantity of the first redundant signal lines of each second signal line group (for example, each second quantity is equal to 3, or the minimum value of the second quantities), take the first signal line as the second intermediate target signal line.

[0110] By comparing the third quantity ebit_cnt_row of failed storage units on the first signal line with the second quantity of the first redundant signal lines of each second signal line group, remove the first signal lines on the first signal line that can be replaced by the first redundant signal lines to repair the failed storage units, obtain the first signal lines that need to be further determined whether they need to be used as the first type of signal lines, and take them as the second intermediate signal lines, initially reducing the quantity of the first signal lines taken as the target signal line.

[0111] S10224: Compare the third quantity ebit_cnt_row of failed storage units on the second intermediate target signal line with the fourth quantity of the first redundant signal lines of the redundant storage array; when the third quantity is less than or equal to the fourth quantity, take the second intermediate target signal line as the target signal line.

[0112] By comparing the third quantity ebit_cnt_row of failed storage units on the second intermediate target signal line with the fourth quantity of the first redundant signal lines of the redundant storage array, remove the first signal lines on the second intermediate target signal line that must be replaced by the second redundant signal lines to repair the failed storage units, further reducing the quantity of the first signal lines taken as the target signal line and improving the determination rate of the first type of signal lines.

[0113] With Figure 3For example, when the third quantity ebit_cnt_rowx of failed memory cells on the word line WLx is greater than the second quantity (3) of the first redundant signal lines of each second signal line group, it is determined that further judgment needs to be made on the word line WLx, and it is used as the second intermediate target signal line, that is, the first signal line with the number of failed memory cells greater than the second quantity (3) is selected as the second intermediate target signal line. When the third quantity ebit_cnt_rowx of failed memory cells on the word line WLx, which is used as the second intermediate signal line, is greater than the fourth quantity (48) of the first redundant signal lines of the redundant memory array, it is determined that the second redundant signal line must be used to replace the second intermediate target signal line to repair the failed memory cells on the second intermediate target signal line (word line WLx), and the word line WLx does not need to be determined as the target signal line to determine whether it is the first type of signal line. When the third quantity ebit_cnt_rowx of failed memory cells on the word line WLx, which is used as the second intermediate signal line, is less than or equal to the fourth quantity (48), it is determined that further judgment needs to be made on the second intermediate target signal line (word line WLx), and it is used as the target signal line.

[0114] In some embodiments, the "determining the first quantity of failed memory cells corresponding to the target signal line among the multiple first signal lines of the memory array and each first signal line group of the memory array" in step S102 includes: determining the third quantity of failed memory cells on each first signal line; sequentially selecting the first signal line as the target signal line in descending order of the third quantity of failed memory cells on each first signal line; and determining the first quantity of failed memory cells corresponding to the target signal line and each first signal line group of the memory array. Through this setting, the determination rate of the first type of signal line can be improved, and the repair rate of failed memory cells can be increased.

[0115] For the specific steps of determining the third quantity of failed memory cells on each first signal line, refer to the description of determining the third quantity of failed memory cells on the first signal line above, and details are not described here.

[0116] Compare the third quantity of failed memory cells on each first signal line, sequentially select the first signal line as the target signal line in descending order of the third quantity, and determine the first quantity of failed memory cells corresponding to the target signal line and each first signal line group of the memory array; among them, for the specific steps of determining the first quantity of failed memory cells corresponding to the target signal line and each first signal line group of the memory array, refer to the description of determining the first quantity of failed memory cells corresponding to the target signal line and each first signal line group of the memory array above, and details are not described here.

[0117] This method first selects the first signal line with more failed storage units as the target signal line, and then selects the first signal line with fewer failed storage units as the target signal line, which can improve the determination rate of the first type of signal lines. Moreover, when the first signal line serving as the target signal line is not the first type of signal line, the selection of the target signal line can be stopped, reducing the determination time of the first type of signal lines and improving the determination efficiency of the first type of signal lines.

[0118] Taking Figure 3 as an example, determine the third quantity ebit_cnt_row0 of the failed storage units on the word line WL0, determine the third quantity ebit_cnt_row1 of the failed storage units on the word line WL1, the third quantity ebit_cnt_row2 of the failed storage units on the word line WL2,..., the third quantity ebit_cnt_rown-1 of the failed storage units on the word line WLn-1, and sequentially select the word lines corresponding to the third quantity ebit_cnt_row as the target signal lines in descending order of the third quantity ebit_cnt_row0, the third quantity ebit_cnt_row1, ebit_cnt_row2,..., the third quantity ebit_cnt_rown-1.

[0119] In some embodiments, the repair method of the storage device further includes: S1021: Determine the third quantity of the failed storage units on each first signal line; S1023: In response to the third quantity of the failed storage units on the first signal line being greater than the fourth quantity of the first redundant signal lines of the redundant storage array, directly mark the first signal line as the first type of signal line.

[0120] S1021 (the same S1021 described above): Obtain the third quantity ebit_cnt_row of the failed storage units on each first signal line; S1023 (executed before or after the aforementioned S1022, or alternatively executed with the aforementioned S1022): Obtain the fourth quantity of the first redundant signal lines of the redundant storage array; compare the third quantity ebit_cnt_row of the failed storage units on the first signal line with the fourth quantity of the first redundant signal lines of the redundant storage array, and when the third quantity ebit_cnt_row is greater than the fourth quantity, directly mark the first signal line as the first type of signal line. Through this setting, all the first type of signal lines existing in the first signal lines can be determined, improving the repair rate of the failed storage units.

[0121] Taking Figure 3For example, obtain the third quantity ebit_cnt_row of the failed memory cells on each of the first signal lines WL0 to WLn-1; obtain the fourth quantity (48) of the first redundant signal lines of the redundant memory array; compare the third quantity ebit_cnt_rowx of the failed memory cells on the word line WLx with the fourth quantity (48), and when the third quantity ebit_cnt_rowx is greater than the fourth quantity (48), determine that the word line WLx is the first signal line that must be replaced by the second redundant signal line, and directly mark the word line WLx as the first type of signal line.

[0122] In some embodiments, the step S104 of "in response to the first quantity of the failed memory cells corresponding to the first signal line group on the target signal line being greater than the second quantity of the first redundant signal lines corresponding to the second signal line group of the first signal line group, marking the target signal line as the first type of signal line" further includes: S1041: sequentially obtain the first quantity of the failed memory cells corresponding to each first signal line group on the target signal line; S1042: in response to the first quantity of the failed memory cells corresponding to any one of the first signal line groups being greater than the second quantity corresponding to the first signal line group, set the flag bit of the signal line address corresponding to the target signal line in the failure repair array (ebit_cnt_main_row) to mark the first type of signal line. Through this setting, the marking of the first type of signal line is achieved, facilitating the subsequent replacement of the first type of signal line with the second redundant signal line.

[0123] According to the sorting of the first signal line group, write and read data for the memory cells on the multiple second signal lines that are simultaneously located on the target signal line and the first first signal line group, count the number of memory cells with inconsistent read data and written quantity, and use it as the first quantity ebit_cnt0 corresponding to the first first signal group; and so on, obtain the first quantities ebit_cnt1 to ebit_cnt15 of the failed memory cells corresponding to each first signal line group on the target signal line; compare the first quantity ebit_cnt corresponding to the target signal line and each first signal line group with the second quantity of the second signal line group corresponding to the first signal line group, and when the first quantity ebit_cnt of the failed memory cells corresponding to any one of the first signal line groups is greater than the second quantity corresponding to the first signal line group, set the flag bit of the signal line address corresponding to the target signal line in the failure repair array ebit_cnt_main_row to mark it as the first type of signal line.

[0124] For Figure 3For example, taking word line WL3 as the target signal line, sequentially obtain the first quantity ebit_cnt0 of failed memory cells corresponding to group A0 on word line WL3, the first quantity ebit_cnt1 of failed memory cells corresponding to group A1 on word line WL3, ……, the first quantity ebit_cnt15 of failed memory cells corresponding to group A15 on word line WL3. Among the first quantity ebit_cnt0, the first quantity ebit_cnt2, ……, the first quantity ebit_cnt15, if any one of the first quantities ebit_cntx is greater than the second quantity of the first redundant signal line of group Bx, where the first quantity ebit_cntx is the first quantity corresponding to group Ax, and group Ax and group Bx are correspondingly set, set the flag bit of WL_Flag corresponding to the signal line address of word line WL3 (target signal line) in table one to mark word line WL3 as the first type of signal line.

[0125] It should be understood that although Figure 2 the steps in the flowchart of Figure 2 are shown sequentially according to the indication of the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless there is a clear indication in this article, the execution of these steps has no strict order limit, and these steps can be executed in other orders. Moreover,

[0126] Based on the same inventive concept, the present application also provides a repair system for a storage device. The same or corresponding parts as those in the embodiments of the above-mentioned repair method for the storage device will not be elaborated below. Figure 3 FIG. Figure 3 is one of the structural schematic diagrams of the repair system for the storage device in the embodiments of the present disclosure. Referring to

[0127] The obtaining module 102 is configured to determine a first quantity of failed storage units corresponding to a target signal line among a plurality of first signal lines of a storage array and each first signal line group of the storage array; the first signal lines extend along a first direction, the plurality of first signal lines are arranged at intervals along a second direction, and the second direction intersects the first direction; the plurality of first signal line groups are respectively and correspondingly arranged with a plurality of second signal line groups of a redundant storage array; a plurality of second signal lines of the first signal line group are arranged at intervals along the first direction and extend along the second direction; and a plurality of first redundant signal lines of the second signal line group are parallel to the second signal lines.

[0128] The operation module 104 is connected to the obtaining module 102 and is configured to, in response to the first quantity of failed storage units corresponding to the target signal line in a first signal line group being greater than a second quantity of first redundant signal lines of the second signal line group corresponding to the first signal line group, mark the target signal line as a first type of signal line. As an example, the operation module 104 includes a comparator.

[0129] The repair module 106 is connected to the operation module 104 and is configured to use a second redundant signal line of the redundant storage array to replace the first type of signal line to achieve repair; the second redundant signal line is parallel to the first signal line.

[0130] In the repair system of the above storage device, when the first quantity of failed storage units corresponding to the target signal line and each first signal line group is greater than the second quantity of first redundant signal lines of the second signal line group corresponding to the first signal line group, the operation module 104 determines that the target signal line is a first type of signal line that needs to be replaced with a second redundant signal line, with high accuracy and fast speed, improving the rate and efficiency of the repair module 106 in repairing failed storage units.

[0131] Based on the same inventive concept, the present application further provides a repair system for a storage device. Parts that are the same as or corresponding to those in the above embodiments of the repair method for a storage device will not be elaborated below. Figure 4 This is the second structural schematic diagram of the repair system for a storage device in an embodiment of the present disclosure. Refer to Figure 4 , in this embodiment, a repair system for a storage device is provided, including: a main control device 202 and a storage device 204.

[0132] The storage device 204 is connected to the main control device 202. The storage device 204 includes: storage dies 302; the storage dies 302 include at least one storage module 402, and the storage module 402 includes a storage array and a redundant storage array.

[0133] The main control device 202 is connected to the memory die 302, and is used to obtain the failure storage information of the failed storage units in the storage array, and execute the repair method of the storage device as described above according to the failure storage information to generate repair information. The failure storage information represents the position information of the failed storage units in the storage array; the repair information includes the corresponding information of the second redundant signal lines and the first type of signal lines in the redundant storage array. Exemplarily, the main control device 202 can be the upper computer of the test machine, or can be packaged together with the storage device 204 to form a memory, and the main control device 202 serves as the main chip in the memory.

[0134] In the repair system of the above storage device, during the process of the main control device 202 generating the repair information, when the first quantity of the failed storage units corresponding to the target signal line and each first signal line group is greater than the second quantity of the first redundant signal lines of the second signal line group corresponding to the first signal line group, it is determined that the target signal line is the first type of signal line that needs to be replaced by the second redundant signal line, and the accuracy of the first type of signal line is high and the speed is fast, which improves the repair rate and repair efficiency of the failed storage units.

[0135] Figure 5 FIG. 3 is a schematic structural diagram of the repair system of the storage device in an embodiment of the present disclosure. Refer to Figure 5 In some embodiments, the storage device 204 further includes: a control die 304; the control die 304 is respectively connected to the main control device 202 and the memory die 302, and is used to generate a repair signal according to the repair information; the memory die 302 is used to replace the first type of signal line with the second redundant signal line in the redundant storage array according to the repair signal to achieve repair. It can be understood that the memory die 302 maps the signal line address of the first type of signal line to the redundant signal line address corresponding to the second redundant signal line according to the repair signal.

[0136] Figure 6 FIG. 4 is a schematic structural diagram of the repair system of the storage device in an embodiment of the present disclosure. Refer to Figure 6 In some embodiments, the control die 304 includes: a redundancy loader 404 and a controller device (RTL IP) 406. The redundancy loader 404 is respectively connected to the main control device 202 and the controller device 406, and the controller device 406 is connected to the storage module 402; the redundancy loader 404 is used to generate a repair control signal according to the repair information, and the controller device 406 is used to output a corresponding repair signal to the connected storage module 402 according to the repair control signal output by the connected redundancy loader 404.

[0137] Figure 7 FIG. 5 is a schematic structural diagram of the repair system of the storage device in an embodiment of the present disclosure. Refer to Figure 7In some embodiments, the storage die 302 includes a storage group 400, and the storage group 400 includes multiple storage modules 402; the control die 304 includes: a redundant loading device 404 and a control device 406; the redundant loading device 404 is connected to the main control device 202 and the control device 406 respectively, and the control device 406 is correspondingly connected to the storage group 400; the redundant loading device 404 is used to generate a repair control signal according to the repair information, and the control device 406 is used to output a corresponding repair signal to the multiple storage modules 402 of the connected storage group 400 according to the repair control signal output by the connected redundant loading device 404.

[0138] Figure 8 This is the sixth structural diagram of the repair system of the storage device in the embodiment of the present disclosure, see Figure 8 In some embodiments, the memory die 302 includes a plurality of memory groups 400 , each memory group 400 includes a plurality of memory modules 402 ; the control die 304 includes a redundant loading device 404 and a plurality of control devices 406 .

[0139] The redundant loading device 404 is connected to the main control device 202 and multiple control devices 406 respectively, and the multiple control devices 406 are respectively connected to the multiple storage groups 400; the redundant loading device 404 is used to generate multiple repair control signals according to the repair information; the multiple repair control signals correspond to the multiple control devices 406 respectively; the control device 406 is used to output corresponding repair signals to the multiple storage modules 402 of the connected storage group 400 according to the repair control signals output by the connected redundant loading device 404.

[0140] The redundant loading device 404 generates a plurality of repair control signals according to the repair information output by the main control device 202, and transmits the plurality of repair control signals to the redundant latch (RDN LATCH) of the corresponding control device (RTL IP) 406 according to the first control information; wherein the first control information includes the first address information RTL_IP_ID representing the address of the control device 406, the first switch information RDN_LDEN for controlling the opening and closing of the redundant loading device 404, and the second switch information for controlling the storage and stopping of the repair control signal; the redundant loading device 404 is used to transmit the repair control signal to the control device 406 corresponding to the first address information RTL_IP_ID according to the first address information RTL_IP_ID when the first switch information RDN_LDEN and the second switch information are simultaneously valid; illustratively, the first switch information is valid when the first switch information is a high level 1, and the second switch information is valid when the second switch information is a high level 1.

[0141] As an example, the second switch information includes row switch information RDN_ROWEN and column switch information RDN_COLEN; the redundancy loading device 404 is used to store the row repair information into the redundancy latch (RDN LATCH) of the controller device (RTL IP) 406 corresponding to the first address information RTL_IP_ID when the first switch information RDN_LDEN and the row switch information RDN_ROWEN are both valid; the redundancy loading device 404 is further used to store the column repair information into the redundancy latch (RDN LATCH) of the controller device (RTL IP) 406 corresponding to the first address information RTL_IP_ID when the first switch information RDN_LDEN and the column switch information RDN_COLEN are both valid; wherein, the repair information includes row repair information and column repair information, the row repair information includes the mapping relationship between the redundant word line address corresponding to the redundant storage unit for repairing the failed storage unit in the redundant storage array and the word line address corresponding to the failed storage unit on each first signal line of the failed group, the redundant word line address is the address of the redundant word line corresponding to the redundant storage unit, and the word line address is the address of the word line corresponding to the failed storage unit; the column repair information includes the mapping relationship between the redundant bit line address corresponding to the redundant storage unit for repairing the failed storage unit in the redundant storage array and the bit line address corresponding to the failed storage unit on each first signal line of the failed group, the redundant bit line address is the address of the redundant bit line corresponding to the redundant storage unit, and the bit line address is the address of the bit line corresponding to the failed storage unit.

[0142] The controller device (RTL IP) 406 outputs a repair signal according to the control instruction and the repair control signal; wherein, the control instruction includes at least one of a read instruction, a write instruction, and a refresh instruction; the controller device 406 outputs a repair signal according to the control instruction and the repair control signal when the bit line address and / or the word line address of the storage unit corresponding to the control instruction match (are the same) the bit line address and / or the word line address of the failed storage unit.

[0143] Exemplarily, multiple storage groups 400 in the storage die 302 are located on the same wafer. Further, multiple storage modules 402 of the storage groups 400 in the storage die 302 are located on multiple wafers arranged in a stacked manner.

[0144] In some embodiments, the control die 304 further includes: a test module; the test module is respectively connected to the main control device 202 and the storage die 302, and the test module is used to receive the test information output by the main control device 202; the main control device 202 is used to receive the failed storage information generated by the storage module 402 in the storage die 302 according to the test information.

[0145] Furthermore, the test module has a BIST circuit. The test module and the control device are packaged together to form a buffer die in the control die 304.

[0146] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, storage, database, or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memories. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, or optical memory, etc. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc.

[0147] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0148] The above embodiments only represent several implementation manners of the embodiments of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the embodiments of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the embodiments of the present application.

Claims

1. A repair method for a storage device, characterized in that, The storage device includes a storage array and a redundant storage array; The repair method includes: Determining a first quantity of failed storage units corresponding to a target signal line among a plurality of first signal lines of the storage array and each first signal line group of the storage array; the first signal lines extend in a first direction, the plurality of first signal lines are arranged at intervals in a second direction, and the second direction intersects the first direction; a plurality of first signal line groups are respectively and correspondingly arranged with a plurality of second signal line groups of the redundant storage array; a plurality of second signal lines of the first signal line group are arranged at intervals in the first direction and extend in the second direction; a plurality of first redundant signal lines of the second signal line group are parallel to the second signal lines; In response to the first quantity of failed storage units corresponding to the first signal line group on the target signal line being greater than a second quantity of first redundant signal lines of the second signal line group corresponding to the first signal line group, marking the target signal line as a first type of signal line; Using a second redundant signal line of the redundant storage array to replace the first type of signal line to achieve repair; the second redundant signal line is parallel to the first signal line.

2. The repair method according to claim 1, wherein The determining the first quantity of failed storage units corresponding to the target signal line among the plurality of first signal lines of the storage array and each first signal line group of the storage array includes: Determining a third quantity of the failed storage units on each of the first signal lines; In response to the third quantity of the failed storage units on the first signal line being less than or equal to a fourth quantity of the first redundant signal lines of the redundant storage array, taking the first signal line as the target signal line; Determining the first quantity of the failed storage units corresponding to each first signal line group on the target signal line.

3. The repair method according to claim 2, characterized in that, The in response to the third quantity of the failed storage units on the first signal line being less than or equal to the fourth quantity of the first redundant signal lines of the redundant storage array, taking the first signal line as the target signal line includes: In response to the third quantity of the failed storage units on the first signal line being less than or equal to the fourth quantity of the first redundant signal lines of the redundant storage array, taking the first signal line as a first intermediate target signal line; In response to the third quantity of the failed storage units on the first intermediate target signal line being greater than the second quantity of the first redundant signal lines of each second signal line group, taking the first intermediate target signal line as the target signal line.

4. The repair method according to claim 2, wherein The in response to the third quantity of the failed storage units on the first signal line being less than the fourth quantity of the first redundant signal lines of the redundant storage array, taking the first signal line as the target signal line includes: In response to the third quantity of the failed storage units on the first signal line being greater than the second quantity of the first redundant signal lines of each second signal line group, taking the first signal line as a second intermediate target signal line; In response to the third quantity of the failed storage units on the second intermediate target signal line being less than or equal to the fourth quantity of the first redundant signal lines of the redundant storage array, the second intermediate target signal line is taken as the target signal line.

5. The repair method according to claim 1, wherein Determining the first quantity of the failed storage units corresponding to the target signal line and each first signal line group of the storage array among a plurality of first signal lines of the storage array includes: Determining the third quantity of the failed storage units on each of the first signal lines; Sequentially selecting the first signal lines as the target signal line in the order from largest to smallest of the third quantity of the failed storage units on each of the first signal lines; Determining the first quantity of the failed storage units corresponding to each first signal line group on the target signal line.

6. The repair method according to claim 1, characterized in that, It further includes: Determining the third quantity of the failed storage units on each of the first signal lines; In response to the third quantity of the failed storage units on the first signal line being greater than the fourth quantity of the first redundant signal lines of the redundant storage array, directly marking the first signal line as the first type of signal line.

7. The repair method according to claim 1, wherein The step of, in response to the first quantity of the failed storage units corresponding to a first signal line group on the target signal line being greater than the second quantity of the first redundant signal lines corresponding to the first signal line group of the second signal line group, marking the target signal line as the first type of signal line includes: Sequentially obtaining the first quantity of the failed storage units corresponding to each first signal line group on the target signal line; In response to the first quantity of the failed storage units corresponding to any one of the first signal line groups being greater than the second quantity, setting the flag bit at the signal line address corresponding to the target signal line in the failure repair array to mark the first type of signal line.

8. The repair method according to claim 1, characterized in that, The first signal line is a word line, the second signal line is a bit line, the first redundant signal line is a redundant bit line, and the second redundant signal line is a redundant word line.

9. A repair system for a storage device, characterized in that, The storage device includes a storage array and a redundant storage array, and the repair system includes: An acquisition module, configured to determine the first quantity of the failed storage units corresponding to the target signal line and each first signal line group of the storage array among a plurality of first signal lines of the storage array; the first signal lines extend along a first direction, the plurality of first signal lines are arranged at intervals along a second direction, and the second direction intersects with the first direction; a plurality of the first signal line groups are respectively arranged corresponding to a plurality of second signal line groups of the redundant storage array; a plurality of second signal lines of the first signal line group are arranged at intervals along the first direction and extend along the second direction; a plurality of first redundant signal lines of the second signal line group are parallel to the second signal lines; An operation module, connected to the acquisition module, configured to, in response to the first quantity of the failed storage units corresponding to a first signal line group on the target signal line being greater than the second quantity of the first redundant signal lines corresponding to the first signal line group of the second signal line group, mark the target signal line as the first type of signal line; A repair module, connected to the operation module, is configured to use the second redundant signal line of the redundant storage array to replace the first type of signal line to achieve repair; the second redundant signal line is parallel to the first signal line.

10. A repair system for a storage device, characterized in that, It includes: A main control device; A storage device, connected to the main control device, and the storage device includes: Storage dies, including at least one storage module, and the storage module includes a storage array and a redundant storage array; Wherein, the main control device is connected to the storage die, and is configured to obtain the failure storage information of the failed storage unit of the storage array, and execute the repair method of the storage device according to any one of claims 1-7 based on the failure storage information to generate repair information, and the repair information includes the corresponding information of the second redundant signal line and the first type of signal line of the redundant storage array.

11. The repair system according to claim 10, characterized in that, The storage device further includes: A control die, respectively connected to the main control device and the storage die, and is configured to generate a repair signal according to the repair information; The storage die is configured to use the second redundant signal line of the redundant storage array to replace the first type of signal line to achieve repair according to the repair signal.

12. The repair system according to claim 11, wherein, The storage die includes a plurality of storage groups, and each storage group includes a plurality of the storage modules. The control die includes: a redundant loading device and a plurality of control devices. The redundant loading device is respectively connected to the main control device and the plurality of control devices, and the plurality of control devices are respectively connected to the plurality of storage groups in a corresponding manner; The redundant loading device is configured to generate a plurality of repair control signals according to the repair information; the plurality of repair control signals respectively correspond to the plurality of control devices; The control device is configured to output a corresponding repair signal to the plurality of storage modules connected thereto according to the repair control signal output by the connected redundant loading device.

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