Preparation method of suspended two-dimensional material device

Abstract

The embodiment of the invention provides a preparation method of a suspended two-dimensional material device, and the method comprises the steps: S1, carrying out the spin coating of an organic solution on the surface of a to-be-transferred two-dimensional material layer, carrying out the drying treatment, forming an organic thin film layer, and enabling the to-be-transferred two-dimensional material layer to be formed on a substrate; s2, covering the organic thin film layer with a supporting layer, and performing steam fumigation treatment; and S3, separating the to-be-transferred two-dimensional material layer from the substrate, and transferring the to-be-transferred two-dimensional material layer to a target suspended substrate to prepare the suspended two-dimensional material device. According to the preparation method of the suspended two-dimensional material device provided by the embodiment of the invention, the suspended two-dimensional material device can be simply and efficiently prepared in a pollution-free and large-size manner, so that a high-performance suspended device can be prepared.

Description

Technical Field

[0001] This application belongs to the technical field of semiconductor materials, and particularly relates to a method for fabricating a suspended two-dimensional material device. Background Art

[0002] With the continuous iteration of technology, electronic devices have become an essential part of people's lives. Currently, as the circuit integration density continues to increase, traditional silicon-based devices are gradually being replaced due to problems such as the short-channel effect, which has prompted people to turn their attention to new two-dimensional semiconductor materials. Among them, the suspended structure refers to a structure in which all or a part of the functional region of a two-dimensional material is detached from the support of the substrate and suspended in an air or vacuum environment. The suspended two-dimensional material structure and device can eliminate the interface interference caused by the substrate, thereby completely releasing the intrinsic properties of the material and improving the intrinsic performance of the device.

[0003] Therefore, in order to realize high-performance nanoelectronic devices, there is an urgent need for a reliable and atomic-level suspended two-dimensional material device transfer technology. The development of this technology will provide a more controllable and stable process for the fabrication of nanoelectronic devices, and promote the development and application of nanoelectronics. Existing suspended two-dimensional material device transfer technologies include: the method of traditional etching of sacrificial layer substrates, the use of probe transfer electrode technology, and graphene-assisted suspended two-dimensional material device transfer technology, etc.

[0004] Existing suspended two-dimensional material fabrication technologies use a large number of intense etching processes and unclean transfer processes, which result in poor device performance. Two-dimensional materials are prone to contamination and damage during the etching and transfer processes, which will affect the performance of the materials and devices.

[0005] Therefore, how to transfer suspended two-dimensional materials simply, efficiently, without pollution, and in large sizes to fabricate high-performance suspended devices is an urgent problem to be solved at present. Summary of the Invention

[0006] In view of the problems in the above related technologies, this application provides a method for fabricating a suspended two-dimensional material device, which can fabricate a suspended two-dimensional material device simply, efficiently, without pollution, and in large sizes.

[0007] An embodiment of this application provides a method for fabricating a suspended two-dimensional material device, including:

[0008] Step S1: Spin-coat an organic solution on the surface of the two-dimensional material layer to be transferred, and perform a drying treatment to form an organic thin film layer, where the two-dimensional material layer to be transferred is formed on a substrate;

[0009] Step S2: Cover a support layer above the organic thin film layer, and perform a vapor fumigation treatment; and

[0010] Step S3: Separate the two-dimensional material layer to be transferred from the substrate, and transfer the two-dimensional material layer to be transferred to a target suspended substrate to fabricate the suspended two-dimensional material device.

[0011] Further, before step S1, it further includes:

[0012] Fabricate the target suspended substrate.

[0013] Further, before forming the two-dimensional material layer to be transferred on the substrate, it further includes:

[0014] Perform plasma treatment on the substrate.

[0015] Further, the performing plasma treatment on the substrate includes: placing the substrate in a plasma cleaner and performing oxygen plasma treatment.

[0016] Further, step S2 includes: covering a support layer above the organic thin film layer, placing it in a water-containing container without contacting the water body, heating to generate steam, and fumigating for 10 to 60 minutes.

[0017] Further, step S1 includes: spin-coating an organic solution on the surface of the two-dimensional material layer to be transferred and performing a drying treatment for 2 to 10 minutes to form an organic thin film layer.

[0018] Further, step S3 includes: separating the two-dimensional material layer to be transferred from the substrate, transferring the two-dimensional material layer to be transferred to a target suspended substrate, and then performing an annealing treatment.

[0019] Further, after step S3, it further includes:

[0020] Perform a desorption treatment on the organic thin film layer and the support layer.

[0021] Further, the organic thin film layer includes a PMMA thin film layer, the support layer includes a PDMS thin film layer, and the performing a desorption treatment on the organic thin film layer and the support layer includes: performing a desorption treatment on the PMMA thin film layer and the PDMS by acetone or acetone vapor.

[0022] Further, the two-dimensional material layer to be transferred is made of a metal material or a two-dimensional van der Waals layered non-metal material.

[0023] In the method for preparing a suspended two-dimensional material device provided by the embodiments of the present application, first, an organic solution is spin-coated on the surface of the two-dimensional material layer to be transferred and dried to form an organic thin film layer. Then, since the organic thin film layer is usually a flexible structure, a support layer needs to be covered above the organic thin film layer to form a support layer-organic thin film layer-two-dimensional material layer-substrate structure, and steam treatment is performed. Water molecules will enter between the two-dimensional material layer and the substrate and become the main driving force for separating the two-dimensional material layer and the substrate. Due to the weakening of the interaction between the two-dimensional material layer and the substrate, at this time, peeling off the organic thin film layer closely adhered to the support layer can efficiently peel off the two-dimensional material layer from the substrate surface completely. After the steam treatment, the two-dimensional material layer is separated from the substrate, and the two-dimensional material layer peeled off from the substrate is transferred to a target suspended substrate. Finally, the organic thin film layer and the support layer are desorbed to complete the preparation of the suspended two-dimensional material device. The method for preparing a suspended two-dimensional material device provided by the present application can overcome the shortcomings of existing transfer technologies, can simply and efficiently prepare suspended two-dimensional material devices without pollution and in large sizes, and thus can prepare high-performance suspended devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following will briefly introduce the drawings required for use in the description of the embodiments or related technologies. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on the structures shown in these drawings.

[0025] Figure 1 It is a schematic flow chart of the method for preparing a suspended two-dimensional material device provided by the embodiments of the present application;

[0026] Figure 2 It is a schematic structural diagram of a suspended two-dimensional material device provided by the embodiments of the present application;

[0027] Figure 3 It is a schematic structural diagram of a suspended two-dimensional material array device provided by the embodiments of the present application;

[0028] Figure 4 It is a schematic diagram of the operation process of the method for preparing a suspended two-dimensional material device provided by the embodiments of the present application;

[0029] Figure 5 It is a schematic structural diagram of a suspended field effect transistor device prepared according to the method for preparing a suspended two-dimensional material device provided by the embodiments of the present application;

[0030] Figure 6 It is a schematic structural diagram of a suspended Hall device prepared according to the method for preparing a suspended two-dimensional material device provided by the embodiments of the present application;

[0031] Figure 7 It is a schematic diagram of the structure and a schematic diagram of photocurrent imaging of a suspended two-dimensional photodetector prepared by the method for preparing a suspended two-dimensional material device provided in an embodiment of the present application;

[0032] Figure 8 It is a schematic diagram of the structures of multiple suspended devices prepared by the method for preparing a suspended two-dimensional material device provided in an embodiment of the present application.

[0033] Figure 9 It is a wafer-level electrode and device diagram to be transferred prepared by the method for preparing a suspended two-dimensional material device provided in an embodiment of the present application.

[0034] The realization of the purpose of the present application, functional features and advantages will be further described with reference to the embodiments and the accompanying drawings. Detailed implementation manners

[0035] Next, the technical solutions in the embodiments of the present application will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope of protection of the present application.

[0036] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprise" indicate the presence of the described features, wholes, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or their combinations.

[0037] It should also be understood that the terms used in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. As used in the specification of the present application and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0038] Existing suspended two-dimensional material device transfer technologies include: traditional methods of etching substrates, probe transfer electrode technologies, and graphene-assisted suspended two-dimensional material device transfer technologies, etc. Existing two-dimensional material device transfer technologies cannot effectively avoid the problem of using organic or toxic coatings, cause pollution and damage to two-dimensional materials, and are difficult to meet the special requirements of electrode patterns and graphics, a wider selection of substrates, or are difficult to shorten the process of transferring suspended two-dimensional material devices and are difficult to achieve wafer-level electrode array transfer.

[0039] Therefore, referring to Figures 1 to 4 , an embodiment of the present application provides a method for fabricating a suspended two-dimensional material device, which includes:

[0040] Step S1: Spin-coat an organic solution on the surface of the two-dimensional material layer to be transferred, and perform a drying process to form an organic thin film layer, where the two-dimensional material layer to be transferred is formed on a substrate;

[0041] Step S2: Cover a support layer above the organic thin film layer, and perform a vapor fumigation process; and

[0042] Step S3: Separate the two-dimensional material layer to be transferred from the substrate, and transfer the two-dimensional material layer to be transferred onto a target suspended substrate to fabricate the suspended two-dimensional material device.

[0043] Specifically, in the method for fabricating a suspended two-dimensional material device provided by the embodiment of the present application, first, spin-coat an organic solution on the surface of the two-dimensional material layer to be transferred, and perform a drying process to form an organic thin film layer. Then, since the organic thin film layer is usually a flexible structure, it is necessary to cover a support layer above the organic thin film layer to form a support layer-organic thin film layer-two-dimensional material layer-substrate structure, and perform a vapor treatment. Water molecules will enter between the two-dimensional material layer and the substrate, becoming the main driving force for separating the two-dimensional material layer and the substrate. Due to the weakening of the interaction force between the two-dimensional material layer and the substrate, at this time, peeling off the organic thin film layer that adheres tightly to the support layer can efficiently peel off the entire two-dimensional material layer from the substrate surface. After the vapor treatment, separate the two-dimensional material layer from the substrate, and transfer the two-dimensional material layer peeled off from the substrate to a target suspended substrate. Finally, perform a desorption process on the organic thin film layer and the support layer, thereby completing the fabrication of the suspended two-dimensional material device.

[0044] In the method for fabricating a suspended two-dimensional material device provided by the embodiment of the present application, the integrity of the two-dimensional material structure during the transfer process is extremely high, and even a wafer-level suspended two-dimensional material device array can be realized (refer to Figure 3) transfer. The realization of the transfer has no correlation with the thickness of the metal thin film and the pattern of the suspended two-dimensional material device. The water vapor transfer technology can be used from square electrode pairs to multi-electrode structures and even special metal patterns (such as Arabic numerals). Moreover, the lower surface of the transferred and prepared electrode structure can reach atomic-level flatness (depending on the atomically flat substrate) and has high cleanliness. During the whole process, only the upper surface of the two-dimensional material contacts the organic solvent, and the lower surface only contacts water molecules, which can effectively avoid the problem of pollution caused by the residue of organic materials. At the same time, the method of separately preparing the target suspended substrate and the two-dimensional material also avoids the material damage caused by first transferring and then etching the suspension. Therefore, the preparation method of the suspended two-dimensional material device provided by this application can overcome the shortcomings of the existing transfer technology and can transfer the suspended two-dimensional material device simply, efficiently, without pollution and in large sizes.

[0045] It should be noted that the working liquid used in the above quasi-dry method is water, usually distilled water, so as to ensure the absolute cleanliness of the material surface. However, it can also be replaced by other polar solutions, such as ethanol, isopropanol, etc., because ethanol and isopropanol can also play the role of insertion, and compared with water, ethanol and isopropanol can complete the transfer work of some rare water-sensitive materials.

[0046] Referring to Figures 5 to 8 , Figure 5 is a schematic structural diagram of a suspended field-effect transistor device prepared by the preparation method of the suspended two-dimensional material device provided by the embodiment of this application; Figure 6 is a schematic structural diagram of a suspended Hall device prepared by the preparation method of the suspended two-dimensional material device provided by the embodiment of this application;

[0047] Figure 7 is a schematic structural diagram and a photocurrent imaging diagram of a suspended two-dimensional photodetector prepared by the preparation method of the suspended two-dimensional material device provided by the embodiment of this application; Figure 8 is a schematic structural diagram of various suspended devices prepared by the preparation method of the suspended two-dimensional material device provided by the embodiment of this application, where the suspended device can be used as a transistor device, a photodetector, a memristor, etc. From Figures 5 to 8 it can be seen that the preparation method of the suspended two-dimensional material device provided by the embodiment of this application can be applied to the preparation of various suspended two-dimensional material devices, and has a wide application range.

[0048] Figure 9 is a photo of wafer-level material transfer using the embodiment of this application. It can be seen from the figure that the preparation method of the suspended two-dimensional material device provided by the embodiment of this application can realize the batch production and transfer of suspended devices and can meet the requirements of wafer-level preparation.

[0049] Further, referring to Figures 2 to 4, in some embodiments of the present application, before step S1, it further includes:

[0050] Preparing the target suspended substrate.

[0051] Specifically, the embodiments of the present application can separate the device substrate preparation and two-dimensional material preparation processes. First, the target suspended substrate is prepared, and at the same time, the two-dimensional material to be transferred is prepared. The embodiments of the present application support the preparation of personalized and functionally diverse device substrates and can be compatible with current semiconductor micro-nano processing technologies. For example, for the devices involved in the embodiments of the present application, first, the electrode pattern is lithographed, then the metal electrode is evaporated, and then photoresist is spin-coated again. Subsequently, the suspended device channel is lithographed. After development and fixation, the reaction ion etching process is used to etch the suspended part. Finally, the photoresist is washed off, and thus the device substrate with electrodes and the suspended part is prepared.

[0052] For example, a device substrate can be selected first, and photoresist is spin-coated on the substrate. Subsequently, the electrode pattern is exposed using a laser direct writing lithography machine or a hard mask ultraviolet exposure method. After development and fixation operations, the metal electrode is evaporated. After acetone desorption, the electrode is prepared on the substrate. Then, photoresist is spin-coated, and then the suspended channel pattern is exposed using a laser direct writing or hard mask ultraviolet exposure method. After development and fixation operations, the suspended structure to be etched is exposed, and the suspended part is etched using the reaction ion etching technology. After acetone immersion, the photoresist is removed to obtain the target suspended substrate.

[0053] In addition, there are many preparation processes for the target suspended substrate. The core process is to first evaporate the electrode on the substrate, and then lithographically etch the suspended channel pattern to expose the part to be etched and protect the already prepared electrode. Finally, the suspended channel is etched using Reaction Ion Etching (RIE). After washing the photoresist, the target suspended substrate can be obtained.

[0054] Further, in some embodiments of the present application, before forming the two-dimensional material layer to be transferred on the substrate, it further includes:

[0055] Performing plasma treatment on the substrate.

[0056] Specifically, taking a single-polished silicon / silicon oxide substrate treated with oxygen plasma as an example, the substrate structure is placed in a plasma cleaner and treated with oxygen plasma. Since a large number of Si- or Si-O- broken bonds are generated on the surface of the substrate treated with oxygen plasma, the substrate and the two-dimensional material device are not closely attached, and the residual positive charge makes the substrate very hydrophilic, facilitating water molecules to enter between the gold electrode and the substrate, becoming the main driving force for separating the interface between the two-dimensional material device and the substrate.

[0057] Due to the weakening of the interaction between the two-dimensional material device and the substrate, at this time, peeling off the organic thin film layer that is closely adhered to the support layer can efficiently peel off the two-dimensional material device from the substrate surface. The power, oxygen flow rate, and time of the oxygen plasma treatment of the substrate have no obvious effect on the transfer of the two-dimensional material from the substrate. However, under the conditions of long time, high power, and stable oxygen amount, it is easier to achieve water molecule insertion and the transfer is easier.

[0058] Further, in some embodiments of the present application, the plasma treatment of the substrate includes: placing the substrate in a plasma cleaner and performing lattice oxygen plasma treatment.

[0059] Specifically, the substrate structure is placed in a plasma cleaner for lattice oxygen plasma treatment. The cleaning time is between 10 and 120 seconds. Since a large number of Si- or Si-O- broken bonds are generated on the surface of the substrate treated by oxygen plasma, the substrate and the two-dimensional material device are not closely attached, and the residual positive charge makes the substrate very hydrophilic, facilitating the entry of water molecules between the gold electrode and the substrate, which becomes the main driving force for separating the interface between the two-dimensional material device and the substrate.

[0060] Due to the weakening of the interaction between the two-dimensional material device and the substrate, at this time, peeling off the organic thin film layer that is closely adhered to the support layer can efficiently peel off the two-dimensional material device from the substrate surface. The power, oxygen flow rate, and time of the oxygen plasma treatment of the substrate have no obvious effect on the transfer of the two-dimensional material from the substrate. However, under the conditions of long time, high power, and stable oxygen amount, it is easier to achieve water molecule insertion and the transfer is easier.

[0061] It should be noted that other gases such as air or argon can also be used for plasma treatment of the substrate. The specific treatment time depends on the actual situation and is not limited here.

[0062] Further, in some embodiments of the present application, step S2 includes: covering a support layer above the organic thin film layer and placing it in a water-containing container without contacting the water body, heating to generate steam, and fumigating for 10 to 60 minutes.

[0063] Specifically, since the organic thin film layer is usually a flexible structure, a support layer needs to be covered above the organic thin film layer to form a support layer-organic thin film layer-two-dimensional material device-substrate structure, and it is placed in a water-containing container without contacting the water body. It is heated to generate steam and fumigated for 10 to 60 minutes. Water molecules will enter between the two-dimensional material device and the substrate and become the main driving force for separating the two-dimensional material device and the substrate. Due to the weakening of the interaction force between the two-dimensional material device and the substrate, at this time, peeling off the organic thin film layer that is closely adhered to the support layer can efficiently peel off the two-dimensional material device from the substrate surface completely. After the steam treatment, the two-dimensional material device is separated from the substrate, and the two-dimensional material device peeled off from the substrate is transferred to the target substrate.

[0064] It should be noted that the above-mentioned fumigation time is within the range of 10 to 60 minutes. The specific fumigation time depends on the actual situation and is not limited here.

[0065] Further, in some embodiments of the present application, the step S1 includes: spin-coating an organic solution on the surface of the two-dimensional material layer to be transferred and performing a drying treatment for 2 to 10 minutes to form an organic thin film layer.

[0066] Specifically, the function of the organic thin film layer is to transfer the two-dimensional material. When transferring the two-dimensional material device, an organic solution needs to be spin-coated on the surface of the two-dimensional material and a drying treatment for 2 to 10 minutes is performed to form an organic thin film layer, so that the two-dimensional material can be effectively transferred.

[0067] It should be noted that the above-mentioned drying time is within the range of 2 to 10 minutes. The specific drying time depends on the actual situation and is not limited here.

[0068] Further, in some embodiments of the present application, the step S3 includes: separating the two-dimensional material layer to be transferred from the substrate and transferring the two-dimensional material to be transferred to the target suspended substrate, and performing an annealing treatment again.

[0069] Specifically, after the steam treatment, the two-dimensional material is separated from the substrate, and the suspended two-dimensional material layer peeled off from the substrate is transferred to the target suspended substrate, and then a high-temperature baking annealing treatment is performed. The baking time is usually 1 to 3 minutes, so that the two-dimensional material layer adheres closely to the target suspended substrate, and thus it can be ensured that the two-dimensional material layer is firmly attached to the target suspended substrate.

[0070] Further, in some embodiments of the present application, after the step S3, it further includes:

[0071] Performing a desorption treatment on the organic thin film layer and the support layer.

[0072] Further, in some embodiments of the present application, the organic thin film layer includes a PMMA thin film layer, and the support layer includes a PDMS thin film layer. The desorption treatment of the organic thin film layer and the support layer includes: performing desorption treatment on the PMMA thin film layer and the PDMS by acetone or acetone vapor.

[0073] In the method for preparing a suspended two-dimensional material device provided in the embodiments of the present application, the organic thin film layer includes a polymethyl methacrylate thin film layer (Polymethyl Methacrylate, PMMA) or a polystyrene thin film layer (Polystyrene, PS), and the support layer includes a polydimethylsiloxane thin film layer (Polydimethylsiloxane, PDMS) or a silica gel thin film layer. Acetone is a representative low-boiling-point, fast-drying polar solvent with strong dissolving ability and is soluble in water. The organic thin film layer and the support layer made of the above materials can be dissolved in acetone. Therefore, the desorption treatment can be performed on the organic thin film layer and the support layer. In the existing technology of transferring electrodes from a silicon oxide substrate by PMMA, strong acid / alkaline solutions are required to corrode the silicon oxide layer, which will inevitably damage the surface of the sample, contaminate the surface of the electrode pattern, and is environmentally unfriendly. However, the method for preparing a suspended two-dimensional material device provided in the embodiments of the present application only needs to use acetone to desorb the organic thin film layer and the support layer without using other toxic and harmful chemical substances, which is environmentally friendly.

[0074] Further, in some embodiments of the present application, the thickness of the organic thin film layer is between 200 nanometers and 10 micrometers, thus ensuring the extraction and protection of the two-dimensional material. The thickness of the organic thin film layer should be determined according to the actual situation, such as the type and size of the suspended two-dimensional material device.

[0075] Further, in some embodiments of the present application, the thickness of the support layer is between 200 micrometers and 2 millimeters, thus helping the two-dimensional material to desorb from the substrate. The thickness of the support layer should be determined according to the actual situation, such as the thickness of the organic thin film layer, the type and size of the suspended two-dimensional material device.

[0076] Further, in some embodiments of the present application, the two-dimensional material layer to be transferred is made of a metal material or a two-dimensional van der Waals layered non-metal material, and the substrate is made of silicon oxide, silicon, sapphire, diamond or mica.

[0077] The method for preparing a suspended two-dimensional material device provided in the embodiments of the present application has a wide range of applications. The two-dimensional material layer to be transferred is made of metal materials such as gold, silver, copper or chromium or two-dimensional van der Waals layered non-metal materials, and the target suspended substrate can be made of silicon oxide, silicon, sapphire, diamond or mica.

[0078] In addition, the realization of the transfer of suspended two-dimensional material devices has no correlation with the thickness of the metal film and the pattern of the suspended two-dimensional material devices. The oxygen plasma-assisted water vapor transfer technology provided by the embodiments of the present application can be used from square electrode pairs to multi-electrode structures and even special metal patterns (such as Arabic numerals), and the lower surface of the transferred and prepared electrode structure can reach atomic-level flatness (depending on the atomically flat substrate) and has high cleanliness.

[0079] As described above, the above are only specific embodiments of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should all be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A method for preparing a suspended two-dimensional material device, characterized in that, Including: Step S1: Spin-coat an organic solution on the surface of the two-dimensional material layer to be transferred, and perform a drying process to form an organic thin film layer, where the two-dimensional material layer to be transferred is formed on a substrate; Step S2: Cover a support layer above the organic thin film layer, and perform a steam fumigation process; And Step S3: Separate the two-dimensional material from the substrate of the two-dimensional material to be transferred, and transfer the two-dimensional material layer to a target suspended substrate to fabricate the suspended two-dimensional material device.

2. The method according to claim 1, wherein Before step S1, it further includes: Preparing the target suspended substrate.

3. The method according to claim 2, wherein Before forming the two-dimensional material layer to be transferred on the substrate, it further includes: Performing plasma treatment on the substrate.

4. The method according to claim 3, wherein The performing plasma treatment on the substrate includes: placing the substrate in a plasma cleaner and performing oxygen plasma treatment.

5. The method according to any one of claims 1 to 4, characterized in that Step S2 includes: covering a support layer above the organic thin film layer, placing it in a water-containing container without contacting the water body, heating to generate steam, and fumigating for 10 to 60 minutes.

6. The method according to claim 1, wherein Step S1 includes: spin-coating an organic solution on the surface of the two-dimensional material layer to be transferred, and performing a drying process for 2 to 10 minutes to form an organic thin film layer.

7. The method according to claim 1, characterized in that Step S3 includes: separating the two-dimensional material layer to be transferred from the substrate, transferring the two-dimensional material layer to a target suspended substrate, and then performing an annealing process.

8. The method according to claim 1, wherein After step S3, it further includes: Performing a desorption process on the organic thin film layer and the support layer.

9. The method according to claim 8, wherein The organic thin film layer includes a PMMA thin film layer, and the support layer includes a PDMS thin film layer. The performing a desorption process on the organic thin film layer and the support layer includes: performing a desorption process on the PMMA thin film layer and the PDMS by acetone or acetone vapor.

10. The method according to claim 9, characterized in that The two-dimensional material layer to be transferred is made of a metal material or a two-dimensional van der Waals layered non-metal material.

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