Device and method for ground determination of diffusion coefficient of volatile components injected into simulated lunar soil

Abstract

The invention discloses a ground measuring device and method for simulating the diffusion coefficient of lunar soil injected volatile components, and belongs to the field of lunar volatile component research equipment. The device comprises a sample bin connected with an ion implantation mechanism and a pressure sensor connected with the sample bin, the ion implantation mechanism can perform volatile ion implantation on a sample in the sample bin, the sample bin can be heated, and the pressure sensor can detect the internal pressure of the sample bin. The method comprises the following steps: performing high-precision volatile component injection on a simulated lunar soil or lunar soil mineral sample, performing step-by-step heating on the sample subjected to volatile component injection so as to heat and release the volatile components, monitoring the internal air pressure change of a system, and determining the diffusion coefficients of the volatile components in the sample at different temperatures by utilizing the air pressure change. According to the technical scheme, ion implantation and heating release are utilized, and a repeatable experiment for simulating the lunar soil volatile component diffusion behavior on the ground is achieved.

Description

Technical Field

[0001] The present invention belongs to the field of lunar volatile research equipment, and more specifically, relates to a ground determination device and method for simulating the diffusion coefficient of volatile injection into lunar soil. Background Art

[0002] The development and utilization of lunar resources are important research directions in current deep space exploration and space engineering. Volatiles in lunar soil (such as helium-3, hydrogen, helium, nitrogen, argon, etc.) have attracted much attention due to their potential value in energy, scientific research, and future lunar base construction. In order to rationally develop these resources, it is necessary to accurately measure the diffusion characteristics of volatiles in lunar soil, so as to optimize the resource extraction process and evaluate the occurrence state of volatiles and their release behavior under different temperature conditions.

[0003] Currently, the determination of volatiles in lunar samples mainly relies on the limited samples returned to the Earth. However, this method is limited by the sample quantity, experimental equipment conditions, and experimental environment, and it is difficult to conduct a large number of repeatable experiments on the diffusion behavior of lunar soil volatiles. Considering that the volatiles in lunar soil are mainly continuously injected by the solar wind, traditional ground adsorption and diffusion experiments are difficult to simulate the occurrence form of lunar soil volatiles and detect the heating and release behavior of injected volatiles in real time. Therefore, it is necessary to design a determination device and method that can simulate the diffusion behavior of lunar soil volatiles in a ground environment to solve the problem of lunar volatile resource development. Summary of the Invention

[0004] The purpose of the present invention is to fill the gap in the existing technical equipment, and provide a ground determination device and method for simulating the diffusion coefficient of volatile injection into lunar soil, so as to realize the research on the diffusion behavior of volatiles in lunar soil using simulated lunar soil, and verify the volatile extraction technology and other purposes.

[0005] To achieve the above purpose, the present invention adopts the following technical solutions:

[0006] A ground determination device for simulating the diffusion coefficient of volatile injection into lunar soil includes an ion injection mechanism, a sample chamber connected to the ion injection mechanism, and a pressure detection mechanism connected to the sample chamber. The ion injection mechanism includes an ion source, a magnetic analyzer, and an acceleration tube, and the ion injection mechanism can perform volatile ion injection on the sample in the sample chamber; the sample chamber includes a heating chamber and a reaction container tube, the heating chamber is arranged outside the reaction container tube, the heating chamber can heat the reaction container tube, and the sample chamber is connected to the pressure detection mechanism; the pressure detection mechanism is a pressure sensor, and the pressure sensor can detect the pressure inside the sample chamber.

[0007] A ground determination method for simulating the diffusion coefficient of volatile injection into lunar soil is executed based on the above-mentioned ground determination device for simulating the diffusion coefficient of volatile injection into lunar soil, and includes the following steps:

[0008] Standard gas calibration: Start the mechanical pump and molecular pump in the closed system to evacuate the sample chamber. Introduce a certain amount of standard gas through the inlet pipe, gradually increase the temperature of the sample chamber, quickly raise the temperature to the set temperature, and record the temperature of the i-th step as T. i Obtain the air pressure of the i-th step. Continue to heat up to above 1500 °C to obtain the air pressure at the final temperature. ;

[0009] Sample loading: Make the simulated lunar soil or lunar soil mineral sample into a sample slice, place the sample slice on the sample carrier through the sample inlet, and perform evacuation operation on the closed system.

[0010] Ion implantation: Start the ion implantation mechanism to implant volatile ions into the sample slice. According to the ion implantation energy, the type of volatile matter, and the properties of the simulated lunar soil, obtain the ion implantation depth a, and repeat the evacuation operation.

[0011] Temperature rise and diffusion: Repeat the step-by-step temperature rise procedure, record the time when the system reaches stable air pressure at the i-th step as t. i After the system air pressure stabilizes, record the air pressure at the i-th step as p. i Repeat this step to obtain diffusion experiment data at different temperatures. After obtaining the step-by-step temperature rise data, continue to heat the sample chamber to the final temperature, and record the air pressure p0 after the system air pressure stabilizes.

[0012] Diffusion coefficient calculation: According to Fick's law, the diffusion coefficient of the i-th step is expressed by the following formula:

[0013] ;

[0014] According to the calculated D i and temperature T i Obtain the curve of the simulated lunar soil volatile diffusion coefficient varying with temperature.

[0015] Beneficial effects:

[0016] The device and method for measuring the diffusion coefficient of volatile matter injected into simulated lunar soil provided by the present invention can study the diffusion behavior of lunar soil volatile matter on the ground using simulated lunar soil, and solve the research limitations brought about by the scarcity of lunar soil samples. Through high-precision ion implantation, temperature-controlled heating, and high-precision air pressure measurement, quantitative measurement of the diffusion coefficients of various volatile matters in lunar soil at different temperatures is achieved. Description of the drawings

[0017] Figure 1 It is a schematic cross-sectional structure diagram of the device for measuring the diffusion coefficient of volatile matter injected into simulated lunar soil according to an embodiment of the present invention;

[0018] Figure 2Schematic diagram of the implementation process of the ground determination method for the diffusion coefficient of volatiles injected into simulated lunar soil according to an embodiment of the present invention.

[0019] Explanation of reference numerals: 1 ion source, 2 magnetic analyzer, 3 acceleration tube, 4 reaction vessel tube, 5 sample stage, 6 injection port, 7 thermocouple, 8 temperature controller, 9 pressure sensor, 10 heating chamber, 11 inlet pipe, 12 gas source, 13 mechanical pump, 14 molecular pump. Detailed implementation manners

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0021] In view of the special requirements for the research on the diffusion coefficient of lunar soil volatiles, based on the experience of ion implantation and gas diffusion, the present invention provides a ground determination device and method for the diffusion coefficient of volatiles injected into simulated lunar soil. The ground determination device for the diffusion coefficient of volatiles injected into simulated lunar soil has the advantages of controllable sample use and high reliability, and the ground determination method for the diffusion coefficient of volatiles injected into simulated lunar soil has extremely strong feasibility.

[0022] To make the above features and advantages of the present invention more obvious and understandable, the following further details the present invention in combination with the accompanying drawings and specific implementation manners.

[0023] As Figure 1 shown, the present invention provides a ground determination device for the diffusion coefficient of volatiles injected into simulated lunar soil, including an ion implantation mechanism, a sample chamber, and a pressure detection mechanism. The ion implantation mechanism is used to perform volatile ion implantation on the sample in the sample chamber, and includes an ion source 1, a magnetic analyzer 2, and an acceleration tube 3. The acceleration tube 3 is communicated with the reaction vessel tube 4 of the sample chamber; the sample chamber includes a heating chamber 10 and a reaction vessel tube 4. The heating chamber 10 is arranged outside the reaction vessel tube 4, and the heating chamber 10 can heat the reaction vessel tube 4; the sample chamber is connected to the pressure detection mechanism, and the pressure detection mechanism is a pressure sensor 9, and the pressure sensor can detect the pressure inside the sample chamber.

[0024] Among them, the ion source 1 generates an ion beam after being powered on, and after being screened by the magnetic analyzer 2, it is injected into the sample chamber through the acceleration tube 3 to perform volatile ion implantation on the sample.

[0025] A sample stage 5 is provided at the bottom of the reaction vessel tube 4 for placing the sample to be tested. An injection port 6 is provided on one side of the reaction vessel tube. The injection port 6 is used to load the sample and form a sealed gas space inside the reaction vessel tube. The heating chamber 10 surrounds the reaction vessel tube 4 to heat it. The gas volatilized from the sample after heating causes a change in the internal pressure of the system, which is measured by the pressure sensor 9.

[0026] Further, the sample chamber is connected to a thermocouple 7. After the sample stage 5 is loaded with the sample, the thermocouple 7 can monitor the temperature near the sample.

[0027] The thermocouple 7 can be connected to a temperature controller 8. The temperature controller can receive the electrical signal from the thermocouple 7; the temperature controller 8 is connected to the heating chamber 10, and the temperature controller 8 outputs an adjustment signal to the heating chamber 10. The thermocouple 7 monitors the sample temperature in real time and transmits the signal to the temperature controller 8, and the temperature controller 8 precisely adjusts the temperature of the heating chamber 10.

[0028] An intake pipe 11 is provided on one side of the sample chamber. The intake pipe 11 is communicated with the reaction vessel tube 4, and the intake pipe 11 is connected to a gas source 12, and a specific gas can be introduced to regulate the experimental environment.

[0029] In addition, to avoid interference from impurity gases inside the experimental system, the sample chamber is connected to a vacuum system. The vacuum system includes a mechanical pump 13 and a molecular pump 14. The mechanical pump 13 performs primary vacuum pumping, and the molecular pump 14 performs secondary vacuum pumping. The vacuum device communicates with the air pressure environment of the entire device to ensure that the inside of the sample chamber reaches a high vacuum condition, improve the experimental accuracy and reduce gas interference. The vacuum device can discharge the waste gas in the system, and the vacuum device can realize a high vacuum environment inside the sample chamber.

[0030] As Figure 2 shown, in another aspect, the present invention also provides a method for measuring the diffusion coefficient of volatile components injected into simulated lunar soil on the ground, including the steps of:

[0031] Standard gas calibration: Close the injection port, start the mechanical pump and the molecular pump to evacuate the sample chamber. Introduce a certain amount of standard gas through the intake pipe, heat the sample chamber step by step, quickly heat it to the set temperature, record the temperature of the i-th step as T i , and obtain the air pressure of the i-th step , continue to heat up to above 1500 °C, and obtain the air pressure at the final temperature ;

[0032] Sample loading: Make a sample slice from the simulated lunar soil or lunar soil mineral sample, place the sample slice on the sample stage through the injection port, and perform a vacuum pumping operation on the sealed system;

[0033] Ion implantation: Start the ion implantation mechanism to perform volatile component ion implantation on the sample slice. Obtain the ion implantation depth a according to the ion implantation energy, the type of volatile component, and the properties of the simulated lunar soil, and repeat the vacuum pumping operation;

[0034] Temperature increase and diffusion: Repeat the stepwise temperature increase procedure, and record the time when the system reaches stable pressure at the i-th step as t i , and record the pressure at the i-th step as p after the system pressure stabilizes i , repeat this procedure to obtain diffusion experiment data at different temperatures. After obtaining the stepwise temperature increase data, continue to heat the sample chamber to the final temperature, and record the pressure p0 after the system pressure stabilizes;

[0035] Diffusion coefficient calculation: According to Fick's law, the diffusion coefficient at the i-th step is expressed by the following formula:

[0036] ;

[0037] Based on the calculated D i and temperature T i the variation curve of the diffusion coefficient of the simulated lunar soil volatile matter with temperature can be obtained.

[0038] In a specific embodiment, the set temperatures mentioned above can be 200°C, 400°C, 600°C, 800°C, 1000°C, 1200°C, 1400°C. Generally, the upper limit of the set final temperature should be higher than 1500°C to ensure complete volatilization of the volatile matter; the ion implantation energy can be adjusted according to the type of volatile matter and the properties of the sample material.

[0039] Particularly, the present invention uses ion implantation to simulate the injection process of lunar soil volatile matter, uses stepwise heating and pressure measurement to simulate the heating and release process of lunar soil volatile matter, and obtains the diffusion coefficients at different temperatures, enabling a complete set of devices and methods for studying the diffusion behavior of different volatile matters in different simulated lunar soils or mineral materials, and performing quantitative characterization of the diffusion behavior.

[0040] The specific embodiments of the present invention have been described above. It should be clear that the above examples are only for facilitating the understanding of a part of the embodiments of the essence of the present invention. The present invention is not limited to the above specific embodiments, and those skilled in the art can make various deformations or modifications within the scope of the claims. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A ground measurement device for simulating the diffusion coefficient of volatile components injected into lunar soil, characterized in that It includes an ion implantation mechanism, a sample chamber connected to the ion implantation mechanism, and a pressure detection mechanism connected to the sample chamber. The ion implantation mechanism includes an ion source (1), a magnetic analyzer (2), and an acceleration tube (3). The ion implantation mechanism can perform volatile ion implantation on the sample in the sample chamber. The sample chamber includes a heating chamber (10) and a reaction vessel tube (4). The heating chamber (10) is arranged outside the reaction vessel tube (4). The heating chamber (10) can heat the reaction vessel tube. The sample chamber is connected to the pressure detection mechanism. The pressure detection mechanism is a pressure sensor (9), and the pressure sensor (9) can detect the pressure inside the sample chamber.

2. The ground measurement device for the diffusion coefficient of volatile injection into simulated lunar soil according to claim 1, characterized in that: A sample stage (5) is arranged at the bottom of the reaction vessel tube (4) for placing the sample to be measured.

3. The ground measurement device for simulating the diffusion coefficient of volatile components injected into lunar soil according to claim 2, wherein: An inlet (6) is arranged on one side of the reaction vessel tube (4). The inlet (6) is used for loading the sample and forming a sealed gas space inside the reaction vessel tube (4).

4. The ground measurement device for simulating the diffusion coefficient of volatile components injected into lunar soil according to claim 3, wherein: An inlet pipe (11) is arranged on one side of the sample chamber. The inlet pipe (11) communicates with the reaction vessel tube. The inlet pipe (11) is connected to a gas source (12), and the gas source (12) can introduce gas through the inlet pipe.

5. The ground measurement device for the diffusion coefficient of volatile injection into simulated lunar soil according to claim 3, characterized in that: The sample chamber is connected to a vacuum system. The vacuum system includes a mechanical pump (13) and a molecular pump (14). The mechanical pump (13) performs primary vacuum pumping, and the molecular pump (14) performs secondary vacuum pumping. The vacuum system connects the air pressure environment of the entire device to ensure a high vacuum condition inside the sample chamber.

6. The ground measurement device for the diffusion coefficient of volatile injection into simulated lunar soil according to claim 2, wherein: The sample chamber is connected to a thermocouple (7). After the sample stage (5) is loaded with the sample, the thermocouple (7) can monitor the temperature near the sample.

7. The ground measurement device for simulating the diffusion coefficient of volatile components injected into lunar soil according to claim 6, wherein: The thermocouple (7) is connected to a temperature controller (8). The temperature controller (8) can receive the electrical signal from the thermocouple (7). The temperature controller (8) is connected to the heating chamber (10), and the temperature controller (8) outputs an adjustment signal to the heating chamber (10).

8. A ground measurement method for the diffusion coefficient of volatile injection into simulated lunar soil, which is implemented based on the ground measurement device for the diffusion coefficient of volatile injection into simulated lunar soil described in claim 7 above, characterized in that, It includes the following steps: Standard gas calibration: Close the injection port, start the mechanical pump and molecular pump to evacuate the sample chamber. Introduce a certain amount of standard gas through the inlet pipe, gradually heat up the sample chamber, quickly heat up to the set temperature, and record the temperature of the i-th step as T i , and obtain the air pressure of the i-th step . Continue to heat up to above 1500 °C to obtain the air pressure at the final temperature ; Sample loading: Making a sample wafer from the simulated lunar soil or lunar soil mineral sample, placing the sample wafer on the sample stage through the inlet, and performing a vacuum pumping operation on the closed system. Ion implantation: Starting the ion implantation mechanism to perform volatile ion implantation on the sample wafer, obtaining the ion implantation depth a according to the ion implantation energy, the type of volatile matter, and the properties of the simulated lunar soil, and repeating the vacuum pumping operation. Temperature rise and diffusion: Repeat the stepwise temperature rise procedure, and record the time when the system reaches stable pressure at the i-th step as t i , and record the pressure at the i-th step as p after the system pressure stabilizes i , repeat this procedure to obtain diffusion experiment data at different temperatures. After obtaining the stepwise temperature rise data, continue to heat the sample chamber to the final temperature, and record the pressure p0 after the system pressure stabilizes; Diffusion coefficient calculation: According to Fick's law, the diffusion coefficient in the i-th step is expressed by the following formula: ； According to the calculated D i and temperature T i The variation curve of the simulated lunar regolith volatile diffusion coefficient with temperature is obtained.

9. The ground determination method for the diffusion coefficient of volatile injection into simulated lunar soil according to claim 8, wherein The set temperatures are 200°C, 400°C, 600°C, 800°C, 1000°C, 1200°C, and 1400°C.

10. The method for ground determination of the diffusion coefficient of volatile components injected into simulated lunar soil according to claim 8, characterized in that, It also includes: Adjusting the ion implantation energy according to the type of volatile matter and the properties of the sample material.

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