Organic material and organic photoelectric component using same

Abstract

The invention relates to an organic material which comprises a structure shown in a formula I: # imgabs0 #, wherein the structure comprises a polybasic fused ring, conjugated diene and a naphthalene ring, so that the thermal stability of the material can be effectively improved. The invention also provides an organic photoelectric component which comprises a first electrode, an active layer and a second electrode. The active layer contains the organic material. The organic photoelectric component has good dark current density, detection degree and photoelectric conversion efficiency in a near-infrared light band, and has good thermal stability.

Description

Technical Field

[0001] The invention relates to an organic material applied to an organic photoelectric component and an organic photoelectric component containing the organic material. Background Art

[0002] Compared with traditional inorganic optoelectronic components, organic optoelectronic components have a wide light absorption range, a large light absorption coefficient, and a controllable structure. The light absorption range, energy level, and solubility can all be adjusted according to target requirements. In addition, organic materials have the advantages of low cost, flexibility, low toxicity, and large-scale production in component manufacturing, making organic optoelectronic components highly competitive in various fields, such as organic field effect transistors (OFETs), organic light emitting diodes (OLEDs), organic photovoltaic cells (OPVs), and organic photodetectors (OPDs).

[0003] Organic photosensitive components are semiconductor devices that convert photoelectric signals. Within their operating band, they should exhibit high sensitivity, fast response speed, minimal noise, a small sensing area, low operating voltage, and high reliability. Organic photovoltaic cells, used to generate electricity from sunlight, share some similarities with organic photosensitive components. The primary difference lies in their intended use: organic photovoltaic cells are power generation devices, while organic photosensitive components are devices that sense light and generate electronic signals. Organic photosensitive components use sunlight as their light source, and the primary consideration in device design is photoelectric efficiency. Organic photosensitive components, however, use a light source with a specific wavelength band. The light intensity is significantly lower than that of solar light, resulting in lower output electronic signal intensity. Therefore, the primary consideration in organic photosensitive components is detectivity. Factors influencing detectivity include responsivity and dark current density, which differ from those in organic photosensitive cells. Another key consideration in organic photosensitive components is wavelength selection, which differs from that in organic photosensitive cells. Organic photosensitive components typically use infrared light to avoid interference. Currently, the materials published in the literature primarily absorb light in the range of approximately 900 nm, with an optical band gap of approximately 1.3 eV. Furthermore, the use of halogenated solvents in the component manufacturing process is environmentally unfriendly.

[0004] Active layer materials play a crucial role in organic photosensors, directly impacting device performance. Active layer materials are divided into two components: donors and acceptors. For donor materials, the mainstream development is focused on DA-type conjugated polymers. The push-pull electron effect between the electron-rich and electron-deficient units in conjugated polymers can be used to manipulate the polymer's energy levels and band gap. The corresponding acceptor material is typically a highly conductive fullerene derivative, whose absorption range is approximately 400-600 nm. However, fullerene derivatives are difficult to adjust structurally, limiting their absorption and energy levels to a certain range. This restricts the overall donor and acceptor material pairing. With market development, demand for materials in the near-infrared region is increasing. Even if the absorption range of the conjugated polymer donor material can be tuned into the near-infrared region, it may not be a good match due to the limitations of the fullerene acceptor. Therefore, the development of non-fullerene acceptors to replace traditional fullerene acceptors is necessary. Regarding the development of non-fullerene acceptor materials, in 2019, Yang's team used ladder-shaped molecules such as Y6 formed with AD-A'-DA structure, and their absorption range was expanded to the near-infrared region. However, the minimum optical band gap of the materials in the above literature is only around 1.3 eV, which is still insufficient for applications with an optical band gap below 1.3 eV.

[0005] Thermal stability is a key factor in the commercialization of organic semiconductors. The temperature process includes the high temperature required for component production and the component operating temperature. Organic photovoltaic cells generally do not require high temperatures for component production in current technology, so only the operating temperature needs to be considered. Current literature reports that the operating temperature is usually 50-80°C in the summer, and only in extreme cases may it exceed 100°C, so the thermal stability discussed in the literature is also below 120°C. However, organic photosensitive components are different from organic photovoltaic cells. In the component production process, semiconductor processes such as integrated circuits and color filters need to be integrated, and the temperature of such processes is usually higher than 120°C. Therefore, in the component development process, the thermal stability of organic photosensitive components at high temperatures is even more important.

[0006] Therefore, developing an organic material with an absorption spectrum extending into the near-infrared region, an optical bandgap below 1.25 eV, the ability to use non-halogen solvents for component manufacturing, and application in organic photosensitive components with thermal stability exceeding 120°C is currently a very important issue. Summary of the Invention

[0007] Therefore, the first scope of the present invention is to provide an organic material comprising a structure of Formula 1:

[0008]

[0009] Wherein, Ar1 is a monocyclic or polycyclic ring, including at least one five-membered heterocyclic ring or one six-membered heterocyclic ring, which has one or more heteroatoms, and the heteroatoms are independently selected from at least one of S, N, O and Se. R1, R2, R3 and R4 are independently selected from the following groups and one of their derivatives: C1-C30 alkyl, C1-C30 silyl, C1-C30 alkoxy, C1-C30 alkylthio, C1-C30 haloalkyl, C2-C30 ester, C1-C30 alkylaryl, C1-C30 alkylheteroaryl, C1-C30 silylaryl, C1-C30 silylheteroaryl, C1-C30 alkoxyaryl, C1-C30 alkoxyheteroaryl, C1-C30 alkylthioaryl, C1-C30 alkylthioheteroaryl, C1-C30 haloalkylaryl, C1-C30 haloalkylheteroaryl, C2-C30 esteraryl and C2-C30 esterarylheteroaryl. 10 、R 11 、R 12 、R 13 、R 14 、R 15 and R 16 Independently selected from the following groups and one of their derivatives: C1-C30 alkyl, C1-C30 silyl, C1-C30 alkoxy, C1-C30 alkylthio, C1-C30 haloalkyl, halogen, hydrogen, deuterium, tritium and cyano.

[0010] Among them, the optical band gap of organic materials is <1.25eV.

[0011] Wherein, Ar1 is selected from one of the following structures:

[0012]

[0013] The above structure is connected by *, R 17 and R 18 It can be an independent single group or a combined group connected by covalent bonds.

[0014] Among them, R 17 and R 18independently selected from the following groups and one of their derivatives: halogen, hydrogen atom, cyano group, C1-C30 alkyl group, C2-C30 alkenyl group, C1-C30 alkoxy group, C1-C30 alkylthio group, C1-C30 haloalkyl group, C2-C30 ester group, C1-C30 alkylaryl group, C1-C30 alkylheteroaryl group, C1-C30 silylaryl group, C1-C30 silylheteroaryl group, C1-C30 alkoxyaryl group, C1-C30 alkoxyheteroaryl group, C1-C30 alkylthioaryl group, C1-C30 alkylthioheteroaryl group, C1-C30 haloalkylaryl group, C1-C30 haloalkylheteroaryl group, C2-C30 esteraryl group and C2-C30 esteraryl group.

[0015] Wherein, R1 and R2 are further independently selected from the following groups and one of their derivatives: C1-C30 alkyl, C1-C30 alkylaryl and C1-C30 alkylheteroaryl; R3 and R4 are further independently selected from the following groups and one of their derivatives: C1-C30 alkyl, C1-C30 silyl, C1-C30 alkoxy, C1-C30 alkylthio, C1-C30 alkylaryl, C1-C30 alkylheteroaryl, C1-C30 alkoxyaryl, C1-C30 alkoxyheteroaryl, C1-C30 alkylthioaryl, C1-C30 alkylthioheteroaryl, C1-C30 halogenated alkylaryl and C1-C30 halogenated alkylheteroaryl.

[0016] Among them, R5, R6, R7, R8, R9, R 10 、R 11 、R 12 、R 13 、R 14 、R 15 and R 16 is further independently selected from one of the following groups: halogen, hydrogen atom, deuterium atom and cyano group. 10 、R 11 、R 12 、R 13 、R 14 、R 15 and R 16 Not all hydrogen atoms.

[0017] Among them, R5, R 10 、R 11 and R 16 R6, R7, R8, R9, R 12 、R 13 、R 14 and R 15Further independently selected from the following groups and one of their derivatives: halogen, hydrogen atom, C1-C5 haloalkyl, C1-C5 alkoxy, and cyano.

[0018] A second aspect of the present invention provides an organic composition comprising at least one P-type organic semiconductor material and at least one N-type organic semiconductor material. The P-type organic semiconductor material comprises at least one organic conjugated polymer or one organic conjugated small molecule. The N-type organic semiconductor material comprises at least one of the aforementioned organic materials.

[0019] A third aspect of the present invention provides an organic optoelectronic device comprising a first electrode, an active layer, and a second electrode. The active layer comprises at least one of the organic materials described above. The active layer is located between the first and second electrodes, and at least one of the first and second electrodes is transparent or semi-transparent.

[0020] A fourth aspect of the present invention provides an organic optoelectronic device comprising a first electrode, an active layer, and a second electrode. The active layer comprises at least one of the organic compositions described above. The active layer is positioned between the first and second electrodes, and at least one of the first and second electrodes is transparent or semi-transparent.

[0021] Compared to existing technologies, the organic material of this invention features polycyclic fused rings, conjugated diene, and naphthalene rings. Its absorption spectrum extends into the near-infrared region, its optical band gap is below 1.25 eV, and it can be fabricated using non-halogen solvents. Organic photosensor devices using this organic material exhibit excellent dark current density, detectivity, and photoelectric conversion efficiency in the near-infrared region, as well as good thermal stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic structural diagram of an organic optoelectronic component according to a specific embodiment of the present invention is shown.

[0023] Figure 2 The absorption spectra of organic materials Comparative Example 1, Example 1, Example 2, Example 3, and Example 6 in thin film state are shown.

[0024] Figure 3 The thin film absorption spectra of the organic material comparative example 1 of the present invention before and after annealing are shown.

[0025] Figure 4 The thin film absorption spectra of the organic material Example 1 of the present invention before and after annealing are shown.

[0026] Figure 5 The thin film absorption spectra of Example 2 of the organic material of the present invention before and after annealing are shown.

[0027] Figure 6 The thin film absorption spectra of Example 3 of the organic material of the present invention before and after annealing are shown.

[0028] Figure 7 The thin film absorption spectra of Example 6 of the organic material of the present invention before and after annealing are shown.

[0029] Description of reference numerals:

[0030] 1: Organic optoelectronic components

[0031] 10: Substrate

[0032] 11: First electrode

[0033] 12: First carrier transfer layer

[0034] 13: Active layer

[0035] 14: Second carrier transfer layer

[0036] 15: Second electrode DETAILED DESCRIPTION

[0037] To make the advantages, spirit, and features of the present invention more easily and clearly understood, the following detailed description and discussion will be provided using examples and with reference to the accompanying drawings. It should be noted that these examples are merely representative of the present invention. However, the present invention can be implemented in many different forms and is not limited to the examples described in this specification. Rather, these examples are provided to make the disclosure of the present invention more thorough and comprehensive.

[0038] The terms used in the various embodiments disclosed in the present invention are only used for the purpose of describing specific embodiments and are not intended to limit the various embodiments disclosed in the present invention. As used herein, the singular form also includes the plural form, unless the context clearly indicates otherwise. Unless otherwise specified, all terms used in this specification (including technical terms and scientific terms) have the same meanings as those commonly understood by those skilled in the art in the art to which the various embodiments disclosed in the present invention belong. The above terms (such as those defined in generally used dictionaries) will be interpreted as having the same meanings as in the contextual meanings in the same technical field, and will not be interpreted as having idealized meanings or overly formal meanings, unless clearly defined in the various embodiments disclosed in the present invention.

[0039] Throughout this specification, references to "one embodiment," "a specific embodiment," and the like indicate that the specific features, structures, materials, or characteristics described in connection with that embodiment are included in at least one embodiment of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments.

[0040] definition:

[0041] As used herein, "donor" material, "p-type," or "P-type material" refers to a semiconductor material, such as an organic semiconductor material, that has holes as the primary current or charge carriers. In certain embodiments, when a p-type semiconductor material is deposited on a substrate, it can provide more than about 10 -5 cm 2 / Vs hole mobility.

[0042] As used herein, "acceptor" material, "n-type," or "N-type" material refers to a semiconductor material, such as an organic semiconductor material, that has electrons as the primary current or charge carriers. In certain embodiments, when an n-type semiconductor material is deposited on a substrate, it can provide more than about 10 -5 cm 2 / Vs electron mobility.

[0043] The “” or “*” in the structures listed herein represent the positions of the structures available for bonding, but are not limited thereto.

[0044] As used herein, "solution processing" refers to processes in which compounds (e.g., polymers), materials, or compositions can be used in solution-based processes, such as spin coating, printing (e.g., inkjet printing, gravure printing, lithographic printing, etc.), spray coating, electrospray coating, drop casting, dip coating, and doctor blade coating.

[0045] As used herein, "annealing" refers to a post-deposition heat treatment of a semi-crystalline material for a specified duration, either in ambient or under reduced or increased pressure. "Annealing temperature" refers to a temperature at which the material undergoes small-scale molecular motion and rearrangement during the annealing process. Without being bound by any particular theory, annealing is believed to potentially increase crystallinity in the hybrid film, enhance carrier mobility, and form molecular interactions that effectively create independent electron and hole transport pathways.

[0046] The external quantum efficiency (EQE) used in this article is calculated by substituting the spectral response (Amp / Watt) unit into the above formula, converting amperes to electrons per second (electrons / sec) and watts to photons per second (photons / sec). Generally speaking, quantum efficiency (QE) refers to the external quantum efficiency (EQE), also known as the incident photon-electron conversion efficiency (IPCE).

[0047] The dark current density (J d or J dark ), also known as no-light current, refers to the current flowing in the photovoltaic component in the absence of light.

[0048] The responsivity (R) and detectivity (D*) used in this article are calculated by measuring the dark current density and external quantum efficiency (EQE) of the organic photosensitive element using the following formula:

[0049]

[0050] Where λ is the wavelength and e is the elementary charge (1.602×10 -19 Coulombs, h is Planck's constant (6.626×10 -34 m 2 kg / s, c is the speed of light (3×10 8 m / sec), J dark is the dark current density.

[0051] In one embodiment, an organic material of the present invention comprises a structure of formula 1:

[0052]

[0053] Wherein, Ar1 is a monocyclic or polycyclic ring containing at least one substituted or unsubstituted five-membered heterocyclic ring or one substituted or unsubstituted six-membered heterocyclic ring, which has one or more heteroatoms, and the heteroatoms are independently selected from at least one of S, N, O and Se. R1, R2, R3 and R4 are independently selected from one of the following groups: a substituted or unsubstituted C1-C30 alkyl group, a substituted or unsubstituted C1-C30 silyl group, a substituted or unsubstituted C1-C30 alkoxy group, a substituted or unsubstituted C1-C30 alkylthio group, a substituted or unsubstituted C1-C30 haloalkyl group, a substituted or unsubstituted C2-C30 ester group, a substituted or unsubstituted C1-C30 alkylaryl group, a substituted or unsubstituted C1-C30 alkylheteroaryl group, a substituted or unsubstituted C1-C30 Silylaryl, substituted or unsubstituted C1-C30 silylheteroaryl, substituted or unsubstituted C1-C30 alkoxyaryl, substituted or unsubstituted C1-C30 alkoxyheteroaryl, substituted or unsubstituted C1-C30 alkylthioaryl, substituted or unsubstituted C1-C30 alkylthioheteroaryl, substituted or unsubstituted C1-C30 haloalkylaryl, substituted or unsubstituted C1-C30 haloalkylheteroaryl, substituted or unsubstituted C2-C30 esterylaryl, and substituted or unsubstituted C2-C30 esterylheteroaryl. R5, R6, R7, R8, R9, R 10 、R 11 、R 12 、R 13 、R 14 、R 15 and R 16 The structure is independently selected from the following groups: a substituted or unsubstituted C1-C30 alkyl group, a substituted or unsubstituted C1-C30 silyl group, a substituted or unsubstituted C1-C30 alkoxy group, a substituted or unsubstituted C1-C30 alkylthio group, a substituted or unsubstituted C1-C30 haloalkyl group, a halogen, a hydrogen atom, a deuterium atom, a tritium atom, and a cyano group. This structure exhibits excellent optical properties and an appropriate energy gap, making it suitable for use with suitable p-type materials in organic optoelectronic devices. This structure comprises a polycyclic fused ring, a conjugated diene, and a naphthalene ring, and may exhibit the following characteristics: 1. An optical energy gap below 1.25 eV; 2. Excellent thermal stability.

[0054] In a preferred embodiment, Ar1 is selected from one of the following structures:

[0055]

[0056] The above structure is connected by *, R 17 and R 18 It is an independent single group or a combined group connected by covalent bonds. 17 and R 18 independently selected from one of the following groups: halogen, hydrogen atom, cyano group, substituted or unsubstituted C1-C30 alkyl group, substituted or unsubstituted C2-C30 alkenyl group, substituted or unsubstituted C1-C30 alkoxy group, substituted or unsubstituted C1-C30 alkylthio group, substituted or unsubstituted C1-C30 haloalkyl group, substituted or unsubstituted C2-C30 ester group, substituted or unsubstituted C1-C30 alkylaryl group, substituted or unsubstituted C1-C30 alkylheteroaryl group, substituted or unsubstituted C1-C30 silicon Alkylaryl, a substituted or unsubstituted C1-C30 silylheteroaryl, a substituted or unsubstituted C1-C30 alkoxyaryl, a substituted or unsubstituted C1-C30 alkoxyheteroaryl, a substituted or unsubstituted C1-C30 alkylthioaryl, a substituted or unsubstituted C1-C30 alkylthioheteroaryl, a substituted or unsubstituted C1-C30 haloalkylaryl, a substituted or unsubstituted C1-C30 haloalkylheteroaryl, a substituted or unsubstituted C2-C30 esterylaryl, and a substituted or unsubstituted C2-C30 esterylheteroaryl.

[0057] In practical applications, R1 and R2 are further independently selected from one of the following groups: a C1-C30 alkyl group with or without a substituent, a C1-C30 alkylaryl group with or without a substituent, and a C1-C30 alkylheteroaryl group with or without a substituent. R3 and R4 are further independently selected from one of the following groups: a C1-C30 alkyl group with or without a substituent, a C1-C30 silyl group with or without a substituent, a C1-C30 alkoxy group with or without a substituent, a C1-C30 alkylthio group with or without a substituent, a C1-C30 alkylaryl group with or without a substituent, a C1-C30 alkylheteroaryl group with or without a substituent, The substituted or unsubstituted C1-C30 alkylheteroaryl groups include C1-C30 alkylthioaryl groups, C1-C30 alkylthioheteroaryl groups, C1-C30 alkyl ...

[0058] In actual application, R5, R6, R7, R8, R9, R 10 、R 11 、R 12 、R 13 、R 14 、R 15 and R 16 is further independently selected from one of the following groups: halogen, hydrogen atom, deuterium atom and cyano group. 10 、R 11 、R 12 、R 13 、R 14 、R 15 and R 16 are not hydrogen atoms at the same time. In a preferred embodiment, R5, R 10 、R 11 and R 16 R6, R7, R8, R9, R 12 、R 13 、R 14 and R 15 It is further independently selected from one of the following groups: halogen, hydrogen atom, a substituted or unsubstituted C1-C5 haloalkyl group, a substituted or unsubstituted C1-C5 alkoxy group, and a cyano group.

[0059] Specifically, the organic material may include the following Examples 1 to 22:

[0060]

[0061]

[0062]

[0063]

[0064]

[0065]

[0066]

[0067]

[0068] It should be understood that the above embodiments are representative examples for those skilled in the art to more clearly understand the structural composition of the present invention, and are not limited thereto.

[0069] In one embodiment, an organic composition of the present invention contains at least one P-type organic semiconductor material and at least one N-type organic semiconductor material. The P-type organic semiconductor material contains at least one organic conjugated polymer or an organic conjugated small molecule. The N-type organic semiconductor material contains at least one of the aforementioned organic materials.

[0070] Among them, the P-type organic semiconductor material is further selected from at least one organic conjugated polymer. This conjugated polymer is composed of a plurality of monomers, and the monomers include one selected from the following structures and their combinations:

[0071]

[0072] Among them, Ar2, Ar3, Ar4 and Ar5 are independently selected from monocyclic or polycyclic structures.

[0073] The conjugated polymer further contains the following structure:

[0074]

[0075] Among them, Ar2, Ar3, Ar4 and Ar5 are monocyclic or polycyclic structures respectively containing 4 to 30 ring atoms; n is a positive integer from 1 to 1000; and x and y are mole fractions, where 0 < x < 1, 0 < y < 1 and x + y = 1. In a preferred embodiment, at least one of the ring atoms contained in Ar2, Ar3, Ar4 and Ar5 is a heteroatom, and the heteroatom is independently selected from at least one of S, O, Se, N, F, Cl and Si.

[0076] In one embodiment, Ar2 and Ar4 are independently selected from one of the following structures:

[0077]

[0078] The above structure is connected by *, wherein A1, A2, A3 and A4 are independently selected from O, S and Se. a 、R b 、R c 、R d 、R e and R f any one independently selected from the following groups: a hydrogen atom, a halogen, a cyano group, a C1-C30 alkyl group which may be substituted or not substituted, a C1-C30 alkoxy group which may be substituted or not substituted, a C1-C30 alkylthio group which may be substituted or not substituted, a C1-C30 haloalkyl group which may be substituted or not substituted, a C2-C30 ester group which may be substituted or not substituted, a C1-C30 alkylaryl group which may be substituted or not substituted, a C1-C30 alkylheteroaryl group which may be substituted or not substituted, a C1-C30 silylaryl group which may be substituted or not substituted, a substituted C1-C30 silylheteroaryl group, a substituted or unsubstituted C1-C30 alkoxyaryl group, a substituted or unsubstituted C1-C30 alkoxyheteroaryl group, a substituted or unsubstituted C1-C30 alkylthioaryl group, a substituted or unsubstituted C1-C30 alkylthioheteroaryl group, a substituted or unsubstituted C1-C30 haloalkylaryl group, a substituted or unsubstituted C1-C30 haloalkylheteroaryl group, a substituted or unsubstituted C2-C30 esterylaryl group, and a substituted or unsubstituted C2-C30 esterylheteroaryl group.

[0079] In a preferred embodiment, Ar2 and Ar4 are independently selected from one of the following structures:

[0080]

[0081] From the above embodiments, Ar2 and Ar4 are independently more preferably selected from one of the following structures:

[0082]

[0083] In one embodiment, Ar3 and Ar5 are independently selected from one of the following structures:

[0084]

[0085] The above structure is connected by *, wherein A5, A6, A7 and A8 are independently selected from O, S and Se. g 、R h 、R i 、R j 、R k and R l independently selected from one of the following groups: a hydrogen atom, a halogen, a cyano group, a C1-C30 alkyl group which may be substituted or not substituted, a C1-C30 alkoxy group which may be substituted or not substituted, a C1-C30 alkylthio group which may be substituted or not substituted, a C1-C30 haloalkyl group which may be substituted or not substituted, a C2-C30 ester group which may be substituted or not substituted, a C1-C30 alkylaryl group which may be substituted or not substituted, a C1-C30 alkylheteroaryl group which may be substituted or not substituted, a C1-C30 silylaryl group which may be substituted or not substituted, a substituted C1-C30 silylheteroaryl group, a substituted or unsubstituted C1-C30 alkoxyaryl group, a substituted or unsubstituted C1-C30 alkoxyheteroaryl group, a substituted or unsubstituted C1-C30 alkylthioaryl group, a substituted or unsubstituted C1-C30 alkylthioheteroaryl group, a substituted or unsubstituted C1-C30 haloalkylaryl group, a substituted or unsubstituted C1-C30 haloalkylheteroaryl group, a substituted or unsubstituted C2-C30 esterylaryl group, and a substituted or unsubstituted C2-C30 esterylheteroaryl group. In which * and * are linked by a single bond.

[0086] In a preferred embodiment, Ar3 and Ar5 are independently selected from one of the following structures:

[0087]

[0088] From the above embodiments, Ar3 and Ar5 are independently more preferably selected from one of the following structures:

[0089]

[0090] The substituents may be independently selected from the following groups and their derivatives: C1-C30 alkyl groups, C3-C30 branched alkyl groups, C1-C30 silyl groups, C2-C30 ester groups, C1-C30 alkoxy groups, C1-C30 alkylthio groups, C1-C30 haloalkyl groups, C2-C30 olefins, C2-C30 alkynes, C2-C30 carbon chains containing cyano groups, C1-C30 carbon chains containing nitro groups, C1-C30 carbon chains containing hydroxyl groups, C3-C30 carbon chains containing keto groups, halogens, cyano groups, hydrogen atoms, deuterium atoms, and tritium atoms. The aryl and heteroaryl groups may have monocyclic or polycyclic structures.

[0091] In practical applications, the conjugated polymer further includes the following Examples P-1 to P-39 and PBDB-T:

[0092]

[0093]

[0094]

[0095]

[0096]

[0097]

[0098]

[0099] It should be understood that the above embodiments are representative examples to help those skilled in the art to more clearly understand the structural composition of the present invention, and are not intended to be limiting.

[0100] See also Figure 1 , Figure 1 FIG. 1 shows a schematic structural diagram of an embodiment of an organic photoelectric component 1 of the present invention. Figure 1As shown, in an embodiment, the present invention provides an organic optoelectronic device 1, which includes a first electrode 11, a second electrode 15 and an active layer 13. The active layer 13 is located between the first electrode 11 and the second electrode 15. In one embodiment, the active layer 13 includes the aforementioned organic composition including a structure of Formula 1. The organic optoelectronic device 1 can be a stacked structure, further including a first carrier transport layer 12 and a second carrier transport layer 14, and is stacked in sequence with a substrate 10, a first electrode 11 (transparent or semi-transparent electrode), a first carrier transport layer 12, an active layer 13, a second carrier transport layer 14 and a second electrode 15. The first carrier transport layer 12 is used to transfer carriers in the first electrode 11 and the active layer 13, while the second carrier transport layer 14 is used to transfer carriers in the active layer 13 and the second electrode 15. In detail, the first carrier transport layer 12 is one of an electron transport layer and a hole transport layer, and the second carrier transport layer 14 is the other. Specifically, when the first carrier transport layer 12 is an electron transport layer, the second carrier transport layer 14 is a hole transport layer, resulting in a trans-stacked structure. When the first carrier transport layer 12 is a hole transport layer, the second carrier transport layer 14 is an electron transport layer, resulting in a regular stacked structure. In practice, the organic optoelectronic device 1 may include an organic photovoltaic device, an organic photosensor device, or an organic light-emitting diode.

[0101] To more clearly illustrate the organic composition of the present invention, the following experiments were conducted using Comparative Example 1 and the aforementioned organic material Examples 1-3 and 6 of the present invention to demonstrate the differences in efficacy. Furthermore, an organic composition was prepared using the organic material as an N-type organic semiconductor material and at least one P-type organic semiconductor material. Active layers containing the aforementioned organic materials or organic compositions were then fabricated into organic optoelectronic devices for material and device testing.

[0102] For the optical physical properties of materials and components, UV absorption spectroscopy was measured using a Hitachi UH5700, and oxidation potential was measured using cyclic voltammetry with a CH Instrument 611E.

[0103] Synthesis of Example 1:

[0104] Synthesis of M2:

[0105]

[0106] Tributyl(1,3-dioxolan-2-ylmethyl)phosphonium bromide (0.66 g, 1.80 mmol), M1 (0.70 g, 0.45 mmol), and sodium hydride (60%, 0.10 g, 2.70 mmol) were added sequentially to a 100 mL two-necked flask. Under argon, anhydrous tetrahydrofuran was added and stirred with a magnetic stirrer. The mixture was allowed to react at room temperature for 6 hours. 10% dilute hydrochloric acid (3.5 mL) was added and stirred at room temperature for 30 minutes. Extraction was performed three times with heptane / water. The organic layer was collected, dehydrated by adding magnesium sulfate, and the solvent was removed. The crude product was purified by silica gel column chromatography (eluting solvent: heptane / dichloromethane = 1 / 3) to obtain M2 (700 mg, 97% yield) as a red oil. 1 HNMR (600MHz, CDCl3): δ9.70 (d, J = 7.8 Hz, 2H), 8.09 (d, J = 15.0 Hz, 2H), 7.31 (d, J = 4.2 Hz, 2H), 6.94 (d, J = 3.6 Hz, 2H), 6. 60 (dd, J = 15.0Hz, J = 7.8Hz, 2H) 4.62 (d, J = 4.2, 4H), 2.89 (t, J = 7.8, 4H), 2.06 (m, 2H), 2.78 (m, 2H), 1.37-0.67 (m, 120H).

[0107] Synthesis of Example 1:

[0108]

[0109] M2 (350 mg, 0.22 mmol), M3 (183 mg, 0.65 mmol), and chloroform (10.5 mL) were added to a 100 mL two-necked flask and stirred with a magnet. The mixture was deoxygenated with argon for 30 minutes. Pyridine (0.18 mL) was added in an ice bath and allowed to react for 24 hours. Methanol was added to precipitate the product, which was then collected by vacuum filtration. The crude product was purified by silica gel column chromatography (eluting solvent: heptane / dichloromethane = 1 / 5) to obtain Example 1 (320 mg, 69% yield) as a bluish-black solid. 1 H NMR (600MHz, CDCl3): δ9.11(s,2H),8.89(dd,J=14.4Hz,J=12.0Hz,2H),8.60(d,J=11.4,2H),8.30(s,2H),8.08(d,J=14.4Hz,2H),7.87-7.80(m,4H ),7.36(d,J=3.6Hz,2H),6.98(d,J=3.6Hz,2H),4.69(d,J=7.2Hz,4H),2. 90(d,J=6.6Hz,4H),2.13-2.11(m,2H),1.78(m,2H),1.38-0.70(m,120H).

[0110] Synthesis of Example 2:

[0111] Synthesis of M5:

[0112]

[0113] Tributyl(1,3-dioxolan-2-ylmethyl)phosphonium bromide (0.58 g, 1.56 mmol), M4 (0.66 g, 0.39 mmol), and sodium hydride (60%, 0.06 g, 2.34 mmol) were added sequentially to a 100 mL two-necked flask. Anhydrous tetrahydrofuran was added under argon and stirred with a magnetic stirrer. The mixture was allowed to react at room temperature for 6 hours. 10% dilute hydrochloric acid (3.3 mL) was added and stirred at room temperature for 30 minutes. Extraction was performed three times with heptane / water. The organic layer was collected, dehydrated by adding magnesium sulfate, and the solvent was removed. The crude product was purified by silica gel column chromatography (eluting with heptane / dichloromethane = 1 / 1) to obtain M5 (475 mg, 69% yield) as a red oil. 1 H NMR (600MHz, CDCl3): δ9.70 (d, J = 7.8Hz, 2H), 7.78 (d, J = 15.0Hz, 2H), 7.33 (s, 2H), 6.53 (dd, J = 15.3Hz, J = 7.5Hz, 2H), 4.63(d,J=6.6Hz,4H),3.02(t,J=7.8,4H),2.88(m,4H),2.07(m,2H),1.78(m,2H),1.71(m,2H),1.47-0.69(m,128H).

[0114] Synthesis of Example 2:

[0115]

[0116] M4 (100 mg, 0.06 mmol), M3 (48 mg, 0.17 mmol), and chloroform (5 mL) were added to a 100 mL two-necked flask, stirred with a magnet, and deoxygenated with argon for 30 minutes. Pyridine (0.1 mL) was added in an ice bath and allowed to react for 24 hours. Methanol was added to precipitate the product. The solid was collected by vacuum filtration. The crude product was chromatographed on a silica gel column (eluting solvent: heptane / dichloromethane = 1 / 10) to obtain Example 2 (60 mg, 45% yield) as a bluish-black solid. 1H NMR (600MHz, CDCl3): δ9.09 (s, 2H), 8.81-8.77 (m, 2H), 8.60 (d, J = 11.4Hz, 2H), 8.27 (s, 2H), 7.84-7.77 (m, 6H), 7.35 (s,2H),4.69(m,4H),3.08(t,J=7.8,4H),2.89(m,4H),2.18(m,2H),1.89(m,4H),1.82(m,2H),1.43-0.72(m,126H).

[0117] Synthesis of Example 3:

[0118]

[0119] M6 (200 mg, 0.15 mmol), M3 (130 mg, 0.45 mmol), and chloroform (5 mL) were added to a 100 mL two-necked flask, stirred with a magnet, and deoxygenated with argon for 30 minutes. Pyridine (0.1 mL) was added in an ice bath and allowed to react for 20 hours. Methanol was added to precipitate the product. The solid was collected by vacuum filtration. The crude product was chromatographed on a silica gel column (eluting with heptane / dichloromethane = 1 / 10) to obtain Example 3 (270 mg, 99% yield) as a bluish-black solid. 1 H NMR (500MHz, CDCl3): δ9.12(s,2H),8.83-8.78(m,2H),8.62(d,J=12.0Hz,2H),8.30(s,2H),7.87-7.81(m,4H),7.78(d, J=14.0Hz,2H),4.66(d,J=8.0Hz,4H),3.05(t,J=7.8Hz,4H),2.12-2.11(m,2H),1.90-1.85(m,4H),1.30-0.71(m,98H).

[0120] Synthesis of Example 6:

[0121] M14 synthesis:

[0122]

[0123] Tributyl(1,3-dioxolan-2-ylmethyl)phosphonium bromide (0.34 g, 0.92 mmol), M13 (0.30 g, 0.23 mmol), and sodium hydride (60%, 0.03 g, 1.39 mmol) were added sequentially to a 100 mL two-necked flask. Anhydrous tetrahydrofuran was added under argon and stirred with a magnetic stirrer. The mixture was allowed to react at room temperature for 6 hours. 10% dilute hydrochloric acid (1.5 mL) was added and stirred at room temperature for 30 minutes. Extraction was performed three times with heptane / water. The organic layer was collected, dehydrated by adding magnesium sulfate, and the solvent was removed. The crude product was purified by silica gel column chromatography (eluting solvent: heptane / dichloromethane = 1 / 1.5) to obtain M14 (260 mg, 83% yield) as a red oil. 1 HNMR (600MHz, CDCl3): δ9.70 (d, J = 7.5Hz, 2H), 7.77 (d, J = 15.0Hz, 2H), 6.51 (dd, J = 7.5Hz, J = 15.0Hz, 2 H), 4.55 (d, J = 8.0Hz, 4H), 2.98 (t, J = 7.5Hz, 4H), 2.04 (m, 2H), 1.86-1.83 (m, 4H), 1.28-0.67 (m, 98H).

[0124] Synthesis of Example 6:

[0125]

[0126] M14 (260 mg, 0.19 mmol), M3 (161 mg, 0.58 mmol), and chloroform (8 ml) were added to a 100 ml two-necked flask, stirred with a magnet, and deoxygenated with argon for 30 minutes. Pyridine (0.26 mL) was added in an ice bath and allowed to react for 24 hours. Methanol was added to precipitate the product. The solid was collected by suction filtration. The crude product was chromatographed on a silica gel column (eluting with heptane / dichloromethane = 1 / 9) to obtain Example 6 (227 mg, 63%) as a bluish-black solid. 1 H NMR (600MHz, CDCl3): δ9.12(s,2H),8.82-8.78(m,2H),8.62(d,J=12.0Hz,2H),8.29(s,2H),7.87-7.77(m,6H ), 4.61 (d, J = 7.2Hz, 4H), 3.04 (t, J = 7.8Hz, 4H), 2.12 (m, 2H), 1.87 (quint, J = 7.2Hz, 4H), 1.52-0.71 (m, 98H).

[0127] The material tests of organic material Examples 1 to 3, Example 6, and Comparative Example 1 include material optical property tests:

[0128] The structure of Comparative Example 1 is as follows:

[0129]

[0130] See also Figure 2 And Table 1. Figure 2 The absorption spectra of organic materials Comparative Example 1, Example 1, Example 2, Example 3 and Example 6 in thin film state are shown in Table 1. The material tests of organic materials Comparative Example 1, Example 1, Example 2, Example 3 and Example 6 (including Figure 2 data results).

[0131] Table 1: Material tests of organic materials Comparative Example 1, Example 1, Example 2, Example 3 and Example 6 (including Figure 2 Data results)

[0132]

[0133] like Figure 2 As shown in Table 1, organic materials Example 1, Example 2, Example 3, and Example 6 have good performance in absorption spectra. The thin film absorption maximum of the organic materials in Table 1 falls within the range of 900-943 nm, and the absorption onset falls within the range of 1014-1080 nm. Figure 2 The thin film absorption spectrum of organic materials shows good absorption properties in the range of 300-1100 nm, with an extinction coefficient of 1.16-1.54x10 5 cm -1 M -1 The above-mentioned embodiments 1 to 3, embodiment 6 and comparative example 1 can be applied in the range from visible light to infrared light.

[0134] Thermal stability performance test of single material absorbency:

[0135] See also Figures 3 to 7 . Figure 3 The thin film absorption spectra of the organic material comparative example 1 of the present invention before and after annealing are shown. Figure 4 The thin film absorption spectrum of the organic material Example 1 of the present invention before and after annealing is shown. Figure 5 The thin film absorption spectrum of Example 2 of the organic material of the present invention before and after annealing is shown. Figure 6 The thin film absorption spectrum of Example 3 of the organic material of the present invention before and after annealing is shown. Figure 7 The following table shows the absorption spectra of the thin film of the organic material Example 6 of the present invention before and after annealing. In order to test the stability of the material after heating, the thin film organic material was baked at 220°C for 30 minutes in the atmosphere, and the absorption spectrum was used to observe the changes in the absorption intensity and waveform before and after annealing. Figure 3As shown in FIG1 , the absorption intensity of the organic material comparative example 1 decreases significantly after forging, and the absorption spectrum undergoes a blue shift. Figures 4 to 7 As shown, the absorption intensity of organic materials in Examples 1, 2, 3, and 6 did not significantly decrease after forging, and maintained a certain initial absorption value. This shows that the organic materials of the present invention have good thermal stability and can maintain good device performance even under high-temperature manufacturing and device operation.

[0136] Preparation and performance testing of organic light sensing components of organic optoelectronic components:

[0137] A pre-patterned indium tin oxide (ITO)-coated glass with a sheet resistance of ~15 Ω / sq was used as the substrate. The substrate was sequentially ultrasonicated in deionized water containing soap, deionized water, acetone, and isopropyl alcohol, cleaning for 15 minutes in each step. The washed substrate was further treated with a UV-ozone cleaner for 15 minutes. A top coating of aluminum-doped zinc oxide nanoparticles (AZO) was spin-coated on the ITO substrate at a rotation speed of 2000 rpm for 40 seconds and then baked at 120°C in air for 5 minutes to form an electron transport layer (ETL). The active layer solution contained the aforementioned organic composition, comprising at least one P-type organic semiconductor material as a donor material and at least one N-type organic semiconductor material as an acceptor material (the weight ratio of donor material to acceptor material was 1:1-2). The concentration of the donor material was 10-20 mg / mL. In order to completely dissolve the polymer, the active layer solution should be stirred at 100°C for at least 3 hours on a hot plate, filtered with a PTFE filter membrane (pore size 0.45-1.2μm), and then the active layer solution should be heated for 1 hour. The active layer material is then cooled to room temperature for spin coating, and the coating speed is used to control the film thickness in the range of 100-800nm. Finally, the film formed by the coated active layer material is thermally annealed at 100°C for 5 minutes and then transferred to a thermal evaporation machine. At 3×10 -6 A thin layer (8 nm) of molybdenum trioxide (MoO3) was deposited as a hole transporting layer (HTL) under a vacuum of 1000 Torr. TM The 2400 source meter instrument records the dark current density (J darkExternal quantum efficiency (EQE) was measured using an external quantum efficiency meter with a measurement range of 300 to 1000 nm (bias voltage 0 to -8 V). Silicon (300 to 1100 nm) was used for light source calibration.

[0138] It should be noted that in practical applications, the first electrode preferably has good light transmittance. The first electrode is often made of a transparent conductive material, preferably selected from one of the following conductive material groups: indium oxide, tin oxide, fluorine-doped tin oxide (Fluorine Doped Tin Oxide, FTO) derivatives, or composite metal oxides, such as indium tin oxide (Indium Tin Oxide, ITO) and indium zinc oxide (Indium Zinc Oxide, IZO). The material of the second electrode is a conductive metal, preferably silver or aluminum, more preferably silver. Suitable and preferred materials for the electron transport layer include but are not limited to metal oxides, such as ZnO x , aluminum-doped ZnO (AZO), TiO x or nanoparticles thereof, salts (e.g., LiF, NaF, CsF, Cs2CO3), amines (e.g., primary, secondary, or tertiary amines), conjugated polymer electrolytes (e.g., polyethyleneimine), conjugated polymers (e.g., poly[3-(6-trimethylammoniumhexyl)thiophene], poly(9,9)-bis(2-ethylhexyl-fluorene)-b-poly[3-(6-trimethylammoniumhexyl)thiophene], or poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]), and organic compounds (e.g., tris(8-quinolinyl)-aluminum(III) (Al q3 ), 4,7-diphenyl-1,10-phenanthroline), or a combination of one or more of the above substances. Suitable and preferred materials for the hole transport layer include but are not limited to metal oxides such as ZTO (Zinc Tin Oxide), MoO x , WO x 、NiO x 、SnO xOr its nanoparticles, containing metal salts such as copper sulfide, cuprous thiocyanate, copper iodide, copper indium sulfide, lead sulfide, cobalt acetate, tungsten disulfide, etc., conjugated polymer electrolytes such as PEDOT:PSS, polymer acids such as polyacrylates, conjugated polymers such as polytriarylamine (PTAA), insulating polymers such as Nafion films, polyethyleneimine or polystyrene sulfonate, organic compounds such as N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'-diamine (NPB), N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), or a combination of one or more of the above materials.

[0139] Please refer to Table 2, which shows the dark current density test results of the organic optoelectronic devices of Example 1, Example 3, Example 6 and Comparative Example 1 in the annealing test.

[0140] Table 2: Dark current density test results of organic optoelectronic devices in Example 1, Example 3, Example 6 and Comparative Example 1 during annealing test

[0141]

[0142]

[0143] In the preparation of organic optoelectronic devices, organic materials Example 1, Example 3, Example 6, and Comparative Example 1 were used as N-type organic semiconductor materials, and PBDB-T was used as P-type organic semiconductor material to prepare organic optoelectronic devices Example 1, Example 3, Example 6, and Comparative Example 1. These organic optoelectronic devices were subjected to device testing to investigate their initial dark current density performance and device performance after annealing at 160°C for 1 hour and 2 hours. As shown in Table 2, in terms of initial device performance, Example 1, Example 3, and Example 6 had higher dark current density at -4V. After annealing at 160°C, the dark current density at -4V showed a decreasing trend for Example 1, Example 3, and Example 6, while Comparative Example 1 showed an increasing trend. In the application of organic sensing devices, the lower the dark current density, the better, as a lower dark current density can improve the signal-to-noise ratio and enhance detection. As shown in Table 2, the dark current density of Comparative Example 1 increases due to annealing. In particular, after two hours of annealing, the dark current densities of Example 1, Example 3, and Example 6 are 2.11x10 -8 , 2.25x10 -8 and 2.21x10 -8 A / cm 2 , Comparative Example 1 is 3.33x10 -8 A / cm 2The dark current density of Comparative Example 1 changes from the lowest to the highest. Therefore, it can be seen that the organic optoelectronic devices of Examples 1, 3, and 6 have better thermal stability than those of Comparative Example 1.

[0144] Furthermore, the performance test of the organic light sensing device was conducted using the organic optoelectronic device Example 1 and Comparative Example 1. Please refer to Table 3, which shows the performance test of the organic optoelectronic device Example 1 and Comparative Example 1.

[0145] Table 3: Performance test of organic optoelectronic components Example 1 and Comparative Example 1

[0146]

[0147] In the preparation of organic photoelectric components, organic materials Example 1 and Comparative Example 1 were used as N-type organic semiconductor materials, and PBDB-T was used as P-type organic semiconductor materials to prepare organic photoelectric components Example 1 and Comparative Example 1. As shown in Table 3, in terms of initial component performance, Example 1 has a higher external quantum efficiency (EQE) performance and a higher dark current density. After annealing at 160°C, the dark current density trend at -4V is that the dark current density of Example 1 increases from 1.96x10 -7 A / cm 2 Gradually reduce to 2.11x10 -8 A / cm 2 , while the dark current density of Comparative Example 1 is from 1.20x10 -8 A / cm 2 Gradually increased to 3.33x10 -8 A / cm 2 As for the EQE trend, Example 1 slightly decreased from 54.1% to 51.8%, while Comparative Example 1 significantly decreased from 48.1% to 29.0%. Calculations show that the detectivity of the organic optoelectronic device, with the initial value set as 100%, increased to 292% after annealing at 160°C in Example 1, while that in Comparative Example 1 remained at only 36%. This demonstrates that the organic optoelectronic device of the present invention exhibits superior thermal stability.

[0148] Based on the above experimental results, the organic material and organic composition comprising Formula 1 of the present invention, as well as the organic optoelectronic device using the same, when used as an organic photosensor, exhibit the following characteristics: 1. The device manufacturing process does not require the use of toxic halogen-containing solvents; 2. It exhibits low dark current density and exhibits good EQE and detection performance in the near-infrared band; 3. The material and device possess good thermal stability.

[0149] The above detailed description of the specific embodiments is intended to more clearly illustrate the features and spirit of the present invention, but is not intended to limit the scope of the present invention by the specific embodiments disclosed above. On the contrary, its purpose is to cover various modifications and equivalent arrangements within the scope of the patent application of the present invention.

Claims

1. An organic material comprising a structure of formula 1: in, Ar1 is a monocyclic or polycyclic ring containing at least one five-membered heterocyclic ring or one six-membered heterocyclic ring, which has one or more heteroatoms, and the heteroatoms are independently selected from at least one of S, N, O and Se; R1, R2, R3 and R4 are independently selected from the following groups and one of their derivatives: C1-C30 alkyl, C1-C30 silyl, C1-C30 alkoxy, C1-C30 alkylthio, C1-C30 haloalkyl, C2-C30 ester, C1-C30 alkylaryl, C1-C30 alkylheteroaryl, C1-C30 silylaryl, C1-C30 silylheteroaryl, C1-C30 alkoxyaryl, C1-C30 alkoxyheteroaryl, C1-C30 alkylthioaryl, C1-C30 alkylthioheteroaryl, C1-C30 haloalkylaryl, C1-C30 haloalkylheteroaryl, C2-C30 esteraryl and C2-C30 esterarylheteroaryl; and R5, R6, R7, R8, R9, R 10 、R 11 、R 12 、R 13 、R 14 、R 15 and R 16 Independently selected from the following groups and one of their derivatives: C1-C30 alkyl, C1-C30 silyl, C1-C30 alkoxy, C1-C30 alkylthio, C1-C30 haloalkyl, halogen, hydrogen, deuterium, tritium and cyano.

2. The organic material according to claim 1, wherein The optical band gap of this organic material is less than 1.25 eV.

3. The organic material according to claim 1, wherein Ar1 is selected from one of the following structures: The above structure is connected by *, R 17 and R 18 It can be an independent single group or a combined group connected by covalent bonds.

4. The organic material according to claim 3, wherein R 17 and R 18 Independently selected from the following groups and one of their derivatives: halogen, hydrogen atom, cyano group, C1-C30 alkyl group, C2-C30 alkenyl group, C1-C30 alkoxy group, C1-C30 alkylthio group, C1-C30 haloalkyl group, C2-C30 ester group, C1-C30 alkylaryl group, C1-C30 alkylheteroaryl group, C1-C30 silylaryl group, C1-C30 silylheteroaryl group, C1-C30 alkoxyaryl group, C1-C30 alkoxyheteroaryl group, C1-C30 alkylthioaryl group, C1-C30 alkylthioheteroaryl group, C1-C30 haloalkylaryl group, C1-C30 haloalkylheteroaryl group, C2-C30 esteraryl group and C2-C30 esteraryl group.

5. The organic material according to claim 1, wherein R1 and R2 are further independently selected from the following groups and one of their derivatives: C1-C30 alkyl, C1-C30 alkylaryl and C1-C30 alkylheteroaryl; R3 and R4 are further independently selected from the following groups and one of their derivatives: C1-C30 alkyl, C1-C30 silyl, C1-C30 alkoxy, C1-C30 alkylthio, C1-C30 alkylaryl, C1-C30 alkylheteroaryl, C1-C30 alkoxyaryl, C1-C30 alkoxyheteroaryl, C1-C30 alkylthioaryl, C1-C30 alkylthioheteroaryl, C1-C30 haloalkylaryl and C1-C30 haloalkylheteroaryl.

6. The organic material according to claim 1, wherein R5, R6, R7, R8, R9, R 10 、R 11 、R 12 、R 13 、R 14 、R 15 and R 16 are further independently selected from one of the following groups: halogen, hydrogen atom, deuterium atom and cyano group, wherein R5, R6, R7, R8, R9, R 10 、R 11 、R 12 、R 13 、R 14 、R 15 and R 16 Not all hydrogen atoms.

7. The organic material according to claim 1, wherein R5, R 10 、R 11 and R 16 further selected from hydrogen atom; and R6, R7, R8, R9, R 12 、R 13 、R 14 and R 15 Further independently selected from the following groups and one of their derivatives: halogen, hydrogen atom, C1-C5 haloalkyl, C1-C5 alkoxy, and cyano.

8. An organic composition comprising at least one P-type organic semiconductor material and at least one N-type organic semiconductor material, wherein the P-type organic semiconductor material comprises at least one organic conjugated polymer or an organic conjugated small molecule; and the N-type organic semiconductor material comprises at least one organic material according to claim 1.

9. An organic optoelectronic component, comprising: a first electrode; an active layer comprising an organic material as claimed in claim 1; and The second electrode, wherein the active layer is located between the first electrode and the second electrode, and at least one of the first electrode and the second electrode is a transparent or semi-transparent electrode.

10. An organic optoelectronic component comprising: a first electrode; an active layer comprising an organic composition as claimed in claim 8; and The second electrode, wherein the active layer is located between the first electrode and the second electrode, and at least one of the first electrode and the second electrode is a transparent or semi-transparent electrode.

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