Organic compound containing multi-fluorine long chain and application thereof

Abstract

The invention discloses an organic compound containing a multi-fluorine long chain and application of the organic compound. A polyfluorine long chain is introduced into the compound, and a conjugated system of a molecular structure is broken, so that the absorption spectrum of the material is blue-shifted, visible light is not absorbed, and the transmittance of the material in a light-seeing area is improved; the appropriate fluorine chain length can enable the material to maintain the evaporation temperature suitable for evaporation, the material is suitable for long-time evaporation without decomposition, the industrial processing window can be enlarged, and the thermal stability of the material is improved; due to the exposed fluorine long chain, a molecule has a similar spherical spatial configuration of a fluorine chain wrapping mother nucleus, so that a relatively low surface tension is formed, the fluorine long chain can be used as a cathode patterning material, adhesion deposition of a metal electrode can be inhibited, relatively high transmittance of an OLED (Organic Light Emitting Diode) device is obtained, and the fluorine long chain can be applied to the technical direction of a camera under an OLED screen; and the transmittance of the camera under the OLED screen can be improved.

Description

[0001] This invention application is based on the prior application number: 2022115936998, the application date is: December 13, 2022, and the invention name is: A divisional application of an organic compound containing a polyfluorinated long chain and its application. Technical Field

[0002] The present invention belongs to the field of display technology and relates to an organic compound containing a polyfluorinated long chain, a multilayer film structure containing the same, and an OLED photoelectric device. Background Art

[0003] Organic Light Emitting Diode (OLED), also known as organic electroluminescent device, is a technology that uses organic materials to emit light through carrier injection and recombination under the action of an electric field. It can convert electrical energy into light energy through organic light-emitting materials, including passive OLED (PMOLED) and active OLED (AMOLED). OLED is a new generation of display technology after cathode ray tube (CRT) and liquid crystal display (LCD).

[0004] OLEDs are essentially thin-film stacked devices. Theoretically, if both the anode and cathode are transparent electrodes, light emitted by the light-emitting layer can propagate outside the device from both the anode and cathode. Therefore, depending on the light's transmission path, devices can be categorized as bottom-emitting or top-emitting.

[0005] The light of the bottom-emitting device is transmitted from the anode to the outside of the device through the substrate, while the light of the top-emitting device is transmitted to the outside of the device through the cathode. The different light-emitting methods of the two devices make their application methods very different. If a bottom-emitting device is used in an active matrix structure, its light-emitting path is organic layer-anode-TFT-substrate. TFT is a mesh array switch deposited on the substrate. Due to the presence of TFT, the aperture ratio of the device is further reduced. When the emitted light propagates here, it will be reflected, scattered, etc. and blocked and cannot propagate to the outside of the device, which seriously affects the display effect of the device. The light-emitting direction of the top-emitting device is on the cathode side and does not need to pass through the substrate. Therefore, it also avoids the TFT structure, successfully avoiding the problem of reduced aperture ratio that will occur in the bottom-emitting device, making the image more delicate and clear, and the color vividness is also higher.

[0006] In the top-emitting organic electroluminescent device structure, the traditional cathode material is generally made of very thin metal materials, and basically covers the entire OLED. This solution has remained unchanged in the nearly 30 years of OLED development. However, for some new applications (such as under-screen fingerprints, under-screen cameras, and large-size panels), the selection of metal materials and the evaporation preparation process have become a key to technical development. In particular, with the rapid development of the high-screen-to-body ratio mobile phone market, the demand for full-screen mobile phones has become increasingly strong. Due to the limitations of traditional technology, the camera on the OLED screen cannot be completely hidden, resulting in screens such as bangs screens, pill screens, or water drop screens, which not only reduce the screen-to-body ratio of the mobile phone, but also greatly affect the visual experience. A new top cathode electrode patterning technology has emerged. This technology is based on a self-assembly process, which can not only improve the transparency of the OLED panel, but also achieve the hiding of the under-screen camera;

[0007] With the development of smartphones and tablets, OLED screens have become popular in the market, especially with the recent popularity of full-screen phones, which has led to an increasing demand for concealed front-facing cameras and sensors. While full-screen phones based on pop-up designs can solve the screen-to-body ratio problem, they also come with other issues, such as increased thickness, weight, and design costs, and reduced camera reliability, leading to the gradual abandonment of this solution by the market. Recently, under-screen camera and under-screen fingerprint technology have been proposed as a perfect solution to these problems. This technology is actually an application of transparent OLED displays, which requires the screen to have very high transmittance in the visible and near-infrared regions. Therefore, improving screen transmittance is the core and key to solving these problems.

[0008] Cathode patterning technology includes cathode patterning material (CPM) and cathode auxiliary material (CEM), wherein CPM material is a low-temperature organic material that can be applied to the functional layer of OLED devices by vacuum evaporation deposition. CEM is a metal electrode auxiliary material that is deposited by vacuum evaporation or sputtering to reduce the in-plane resistance of the OLED panel and increase its conductivity. A fine mask (FMM) is used to deposit the CPM basic material to generate a pattern, and then an open mask (Open Mask) is used to deposit the cathode metal material. This requires the cathode patterning material (CPM) to have not only a high transmittance, but also to effectively inhibit the deposition of metal cathode materials (such as Mg / Ag) on the CPM material.

[0009] With the popularity of OLED full-screen displays, under-screen cameras and under-screen fingerprint technology have become major technical challenges, which requires the screen to have very high transmittance in the visible light and near-infrared light fields.

[0010] To continuously improve the performance of OLED screens, not only innovations in OLED device structure and manufacturing processes are needed, but also continuous research and innovation in OLED optoelectronic functional materials. Furthermore, the technical challenge of insufficient transmittance of under-display cameras must be addressed. Therefore, finding high-transmittance materials that suppress metal cathode materials (such as Mg / Ag) as CPM layers for OLED screens to address these issues is a long-standing need in the field. Summary of the Invention

[0011] In response to the above-mentioned problems existing in the prior art, the present application provides an organic compound containing a long polyfluorinated chain, which can achieve a higher transmittance when used as a cathode patterning layer material.

[0012] The present invention provides a specific technical solution as follows: an organic compound containing a polyfluorinated long chain, wherein the organic compound has a structure as shown in general formula (1) and general formula (2):

[0013]

[0014] In the general formula (2), X1, X2, and X3 are each independently a fluorine atom or a hydrogen atom; at least one of X1, X2, and X3 is a hydrogen atom;

[0015] In general formula (1) and general formula (2), A is independently represented by the structure shown in formula (2), formula (3) or formula (4);

[0016]

[0017] In general formula (1) and general formula (2), n=3 or 6;

[0018] In general formula (1) and general formula (2), m = 1, 2 or 3;

[0019] In the general formula (1) and the general formula (2), Ar1 is independently a single bond,

[0020] L1 is expressed as

[0021] i=0 or 1; j=0, 1, 2, 3, 4, 5, 6, 7, or 8; k=0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10;

[0022] When A is represented by formula (2), Ar1 represents a single bond, i=0, and the corresponding L1 is

[0023] When A is represented by formula (3), Ar1 is represented by

[0024] When A is represented by formula (4), Ar1 is represented by

[0025] j+k≥1; preferably ≥2; preferably ≥3;

[0026] L2 represents a single bond, -O-, a substituted or unsubstituted C1-C20 alkylene group, a substituted or unsubstituted C1-C20 silylene group, a substituted or unsubstituted C1-C20 alkyleneoxy group, or a substituted or unsubstituted C1-C20 siloxyl group; L1 and L2 may be the same or different.

[0027] The substituent of the "substituted or unsubstituted" group is optionally selected from fluorine atoms.

[0028] In a preferred embodiment, the structure of the organic compound is as shown in the general formula (I-1), (I-3), (I-4), (I-5), (I-6), (I-8), and (I-9):

[0029]

[0030] L1 is expressed as

[0031] i=0 or 1; j=0, 1, 2, 3, 4, 5, 6, 7, or 8; k=0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10;

[0032] L2 represents a single bond, -O-, a substituted or unsubstituted C1-C20 alkylene group, a substituted or unsubstituted C1-C20 silylene group, a substituted or unsubstituted C1-C20 alkyleneoxy group, or a substituted or unsubstituted C1-C20 silyleneoxy group;

[0033] L1 and L2 can be the same or different;

[0034] X1, X2, and X3 are each independently a fluorine atom or a hydrogen atom; at least one of X1, X2, and X3 is a hydrogen atom;

[0035] In the general formula (I-3), the general formula (I-4), the general formula (I-8), and the general formula (I-9), q=2 or 3.

[0036] In a preferred embodiment, the structure of the organic compound is as shown in the general formula (III-1), (III-2), (III-3), (III-4), and (III-5):

[0037]

[0038] Said a1, b1, c4, d4, e4 are each independently represented by 0, 1, 2, 3, 4, 5, 6, 7 or 8;

[0039] a2, b2, c5, d5, and e5 are each independently 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10;

[0040] Said c2 and d2 are each independently represented as 0, 1, 2, 3 or 4;

[0041] Said c1, c3, d1, d3, e3 are each independently represented as 0 or 1;

[0042] Said q is independently represented as 2 or 3;

[0043] Preferably, a1+a2≥2; b1+b2≥2; c2+c4+c5≥2; d2+d4+d5≥2; e2+e4+e5≥2;

[0044] Preferably, a1+a2≥4; b1+b2≥4; c2+c4+c5≥4; d2+d4+d5≥4; and e2+e4+e5≥4.

[0045] In a preferred embodiment, the structure of the organic compound is shown in the general formula (IV-1), (IV-2), (IV-3), (IV-4), (IV-5), (IV-6), (IV-7), and (IV-8):

[0046]

[0047] Said c4, d4, and e4 are each independently represented by 0, 1, 2, 3, 4, 5, 6, 7 or 8;

[0048] Said c5, d5, and e5 are each independently represented by 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10;

[0049] The q is independently expressed as 2 or 3.

[0050] In a preferred embodiment, L1 and L2 each independently represent -O-, -O-CH2-, -O-(CH2)2-, -O-(CH2)3-, -O-(CH2)4-, -O-(CH2)5-, -O-(CH2)6-, -O(CH2)7-, -O(CH2)8-, -O(CH2)9-, -O(CH2) 10 -, -CH2-, -(CH2)2-, -(CH2)3-, -(CH2)4-, -(CH2)5-, -(CH2)6-, -(CH2)7-, -(CH2)8-, -(CH2)9-, -(CH2) 10 -, -CF2-, -(CF2)2-, -(CF2)3-, -(CF2)4-, -(CF2)5-, -(CF2)6-, -(CF2)7-, -(CF2)8-, -(CF2)9-, -(CF2)10 -、-CH2CF2-、-CH2(CF2)2-、-CH2(CF2)3-、-CH2(CF2)4-、-CH2(CF2)5-、-CH2(CF2)6-、-CH2(CF2)7-、-CH2(CF2)8-、-CH2(CF2)9-、-CH2(CF2) 10 -、-(CH2)2CF2-、-(CH2)2(CF2)2-、-(CH2)2(CF2)3-、-(CH2)2(CF2)4-、-(CH2)2(CF2)5-、-(CH2)2(CF2)6-、-(CH2)2(CF2)7-、-(CH2)2(CF2)8-、-(CH2)2(CF2)9-、-(CH2)2(CF2) 10 -、-(CH2)3CF2-、-(CH2)3(CF2)2-、-(CH2)3(CF2)3-、-(CH2)3(CF2)4-、-(CH2)3(CF2)5-、-(CH2)3(CF2)6-、-(CH2)3(CF2)7-、-(CH2)3(CF2)8-、-(CH2)3(CF2)9-、-(CH2)3(CF2) 10 -、-(CH2)4CF2-、-(CH2)4(CF2)2-、-(CH2)4(CF2)3-、-(CH2)4(CF2)4-、-(CH2)4(CF2)5-、-(CH2)4(CF2)6-、-(CH2)4(CF2)7-、-(CH2)4(CF2)8-、-(CH2)4(CF2)9-、-(CH2)4(CF2) 10 -、-O-CF2-、-O-(CF2)2-、-O-(CF2)3-、-O-(CF2)4-、-O-(CF2)5-、-O-(CF2)6-、-O-(CF2)7-、-O-(CF2)8-、-O-(CF2)9-、-O-(CF2) 10 -、-O-CH2CF2-、-O-CH2(CF2)2-、-O-CH2(CF2)3-、-O-CH2(CF2)4-、-O-CH2(CF2)5-、-O-CH2(CF2)6-、-O-CH2(CF2)7-、-O-CH2(CF2)8-、-O-CH2(CF2)9-、-O-CH2(CF2) 10-, -O-(CH2)2CF2-, -O-(CH2)2(CF2)2-, -O-(CH2)2(CF2)3-, -O-(CH2)2(CF2)4-, -O-(CH2)2(CF2)5 -, -O-(CH2)2(CF2)6-, -O-(CH2)2(CF2)7-, -(CH2)2(CF2)8-, -O-(CH2)2(CF2)9-, -O-(CH2)2(CF2) 10 -, -(CH2)3CF2-, -(CH2)3(CF2)2-, -(CH2)3(CF2)3-, -(CH2)3(CF2)4-, -(CH2)3(CF2)5-, -(C H2)3(CF2)6-, -O-(CH2)3(CF2)7-, -O-(CH2)3(CF2)8-, -O-(CH2)3(CF2)9-, -O-(CH2)3(CF2) 10 -, -O-(CH2)4CF2-, -O-(CH2)4(CF2)2-, -O-(CH2)4(CF2)3-, -O-(CH2)4(CF2)4-, -O-(CH2)4(CF2)5- , -O-(CH2)4(CF2)6-, -O-(CH2)4(CF2)7-, -O-(CH2)4(CF2)8-, -O-(CH2)4(CF2)9- or -O-(CH2)4(CF2) 10 -;; L2 may also represent a single bond; L1 and L2 may be the same or different.

[0051] Preferably, the specific structural formula of the organic compound is any one of the following structures:

[0052]

[0053]

[0054]

[0055]

[0056]

[0057]

[0058]

[0059]

[0060]

[0061]

[0062]

[0063]

[0064]

[0065]

[0066]

[0067]

[0068]

[0069] Preferably, the organic compound structure is any one of the following general structures (VI-1) to (VI-7):

[0070] The independent tables of Rf are Rf-1 to Rf-330; the specific structures of Rf-1 to Rf-330 are as follows:

[0071]

[0072]

[0073]

[0074]

[0075] In a preferred embodiment, the specific structure of the organic compound is any one of Compound 251 to Compound 580:

[0076] The structures of compounds 251 to 580 are (Formula VI-4) where Rf corresponds to Rf-1 to Rf-330;

[0077] The organic compound is preferably Compound 251 to Compound 272; Compound 427 to Compound 436.

[0078]

[0079]

[0080]

[0081] In a preferred embodiment, the transmittance of the organic compound at a wavelength of 400 nm is greater than 90%, preferably greater than 95%, and more preferably greater than 100%; the transmittance at a wavelength of 460 nm is greater than 90%, preferably greater than 95%, and more preferably greater than 100%; and the transmittance at a wavelength of 620 nm is greater than 90%, preferably greater than 95%, and more preferably greater than 100%.

[0082] The present invention also provides a multi-layer film structure, comprising:

[0083] an organic functional layer, a cathode patterning layer, and a cathode layer;

[0084] The cathode patterned layer is located between the organic functional layer and the cathode layer;

[0085] The cathode patterned layer comprises one or more of the organic compounds containing polyfluorinated long chains.

[0086] Preferably, the cathode layer is made of metal material;

[0087] In a preferred embodiment, the cathode layer comprises metal Mg and / or metal Ag; preferably a mixture of metal Mg and metal Ag.

[0088] In a preferred embodiment, the organic functional layer comprises a hole conducting film layer, a light emitting layer and an electron conducting film layer, and the cathode patterned layer is located between the electron conducting film layer and the cathode layer.

[0089] Preferably, the electron conducting film layer comprises an electron transport layer;

[0090] In a preferred embodiment, the electron transport layer is an organic material containing an electron acceptor; preferably containing one of a triazine group, an anthracene group, a cyano group, a pyrimidine group, a pyridyl group, a pyridazinyl group, a pyrazinyl group, a benzimidazolyl group, a benzoxazolyl group, a benzothiazolyl group, a quinolyl group, an isoquinolyl group, a quinoxalinyl group, an isoquinoxalinyl group or a quinazoline group.

[0091] The electron transport layer material is a material that easily receives electrons from the cathode and transfers the received electrons to the light-emitting layer, preferably a material having high electron mobility.

[0092] In a preferred embodiment, the electron transport layer is a mixed vaporized material of an organic material containing an electron acceptor and Liq.

[0093] Preferably, the transmittance of the multilayer film structure at a wavelength of 460nm is greater than 90%, preferably greater than 95%, more preferably greater than 100%; the transmittance at a wavelength of 620nm is greater than 90%, preferably greater than 95%, more preferably greater than 100%.

[0094] The present invention further provides an OLED optoelectronic device, comprising:

[0095] substrate;

[0096] an anode layer, the anode layer being disposed on the substrate;

[0097] an organic functional layer, the organic functional layer being disposed on the anode layer;

[0098] a cathode patterned layer, the cathode patterned layer being disposed on the organic functional layer;

[0099] a cathode layer, the cathode layer being disposed on the cathode patterned layer;

[0100] The cathode patterned layer comprises one or more of the organic compounds containing polyfluorinated long chains.

[0101] The present invention also provides a full-color OLED display device, comprising:

[0102] substrate;

[0103] an anode, the anode being on the substrate; the anode being independently controlled by the TFT;

[0104] Organic functional layers of red, green and blue OLED devices, the organic functional layers being above the anode; the organic functional layers comprising, from bottom to top, a hole conduction film region, a light-emitting layer region, and an electron conduction film region;

[0105] a cathode patterned layer, the cathode patterned layer being prepared on the electron conducting film layer based on a fine mask evaporation process;

[0106] Cathode; the cathode is prepared on the electron conductive film layer and the cathode patterned layer based on an open mask evaporation process;

[0107] The cathode patterned layer is evaporated in a specific selected area of the OLED display device and contains one or more of the organic compounds containing polyfluorinated long chains.

[0108] The beneficial effects of the present invention are:

[0109] The present application provides an organic compound containing a long polyfluorinated chain, which, when used as a cathode patterning layer material, can be deposited on the surface of an organic functional layer and inhibit the adhesion and deposition of cathode metal materials, thereby achieving a higher transmittance.

[0110] The organic compound of the general formula (1) of the present invention has a high transmittance. The transmittance of the compound of the present invention within the wavelength range of 400nm-650nm is 100%;

[0111] The molecular structure of the present invention has a large spatial steric hindrance, and the introduction of a long polyfluorine chain breaks the conjugated system of the molecular structure, causing the absorption spectrum of the material to blue-shift, eliminating visible light absorption and improving the transmittance of the material in the visible light region. The appropriate fluorine chain length can enable the material to maintain a suitable evaporation temperature, making it suitable for long-term evaporation, thereby increasing the industrial processing window and improving the thermal stability of the material.

[0112] The compound of the present invention introduces at least 6 polyfluorinated chains to wrap the parent core. Due to the exposed long fluorine chains, the molecule has a spherical spatial configuration of fluorine chains wrapping the parent core, which is conducive to the formation of lower surface tension. After the compound of the present invention is used as a CPM material and continues to evaporate Mg and Ag, it still has a transmittance of more than 90% at a wavelength greater than 460nm, which can effectively inhibit the adhesion and deposition of Mg and Ag, and realize the selective deposition of Mg and Ag mixed vapor coating, which is beneficial to the application of cathode patterning and improves the transmittance of the under-screen camera of the OLED screen. DETAILED DESCRIPTION

[0113] The present invention will be described in detail below with reference to the embodiments.

[0114] In the present invention, when a layer or element is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. In addition, it will be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0115] In the present invention, terms such as "upper," "lower," "top," and "bottom" that refer to orientation only refer to a particular state and do not imply that the structure is restricted to that orientation. Rather, if the structure can be repositioned, such as inverted, the orientation of the structure will change accordingly. Specifically, in the present invention, the "bottom" or "lower" side of an electrode refers to the side of the electrode closest to the substrate during fabrication, while the opposite side, farther from the substrate, is the "top" or "upper" side.

[0116] I. Preparation of the Compounds of the Invention

[0117] Synthesis Example 1: Synthesis of Compound 16:

[0118]

[0119] 1) Under nitrogen protection, in a 250ml round-bottom flask, raw material A1 (0.35g, 1mmol), triethylamine (0.73g, 1ml, 7.2mmol), 1,4-dioxane (100ml), raw material B1 (3.33g, 7.2mmol) were added in sequence, stirred and mixed, nitrogen was passed through for 30min to replace the air, and then AlCl3 (0.013g, 0.1mmol) was added. The reaction was allowed to react at room temperature for 24h. After the reaction was completed, solid precipitated. The reaction mixture was slowly cooled to room temperature and filtered. The crude filter cake was washed once with 1,4-dioxane (100ml), washed twice with water (200ml), and then dried in vacuo at 80°C to constant weight to obtain compound 16. Elemental analysis structure (molecular formula C 60 H 12 F 102 N3O6P3) Calculated values: C, 24.84; H, 0.42; F, 66.79; N, 1.45; P, 3.20; Found values: C, 24.85; H, 0.45; F, 66.76; N, 1.48; P, 3.24. MALDI-TOF (m / z) found value: 2900.96;

[0120] Synthesis Example 2: Synthesis of Compound 75:

[0121]

[0122] 1) Preparation of Intermediate B2: Refer to the synthesis method of Science of Synthesis, 20a, 137-172; 2006.

[0123] 2) Under nitrogen protection, in a 500ml round-bottom flask, raw material A1 (0.35g, 1mmol) and THF (100ml) were added in sequence, stirred and mixed, and nitrogen was passed through for 30min to replace the air, and then a Grignard reagent solution (90ml) of intermediate B2 (4.96g, 9mmol) was added dropwise. After the addition was complete, the reaction system was heated under reflux for 28h. After the reaction was completed, solid precipitated. The reaction mixture was slowly cooled to room temperature, and water (100ml) was slowly added to quench the excess Grignard reagent. THF was removed under reduced pressure and filtered. The crude filter cake was washed once with n-hexane (100ml), once with ethanol (100ml), and twice with water (200ml), and then dried in vacuo at 80°C to constant weight to obtain compound 75. Elemental analysis structure (molecular formula C 60 H 24 F 102N3P3) Calculated values: C, 25.58; H, 0.86; F, 68.78; N, 1.49; P, 3.30; Found: C, 25.54; H, 0.85; F, 68.73; N, 1.50; P, 3.38. MALDI-TOF (m / z) found: 2816.92.

[0124] Synthesis Example 3: Synthesis of Compound 81:

[0125]

[0126] 1) Preparation of Intermediate C1 The synthesis method of structure 55 in Journal of Fluorine Chemistry 108 (2001) 95-109 was used as reference.

[0127] 2) Under nitrogen protection, in a 500ml round-bottom flask, intermediate C1 (4.72g, 5mmol), NaH (0.48g, 20mmol), and THF (100ml) were added in sequence and stirred for 10min. After nitrogen was passed through for 30min to replace the air, raw material A1 was added three times, each time adding raw material A1 (0.10g, 0.3mmol). The reaction mixture was stirred at room temperature for 12h, and then the excess NaH was quenched by slowly adding anhydrous ethanol. After no NaH remained, water (150ml) was added, and solid precipitated, which was filtered. The filter cake was washed twice with water (200ml) and then dried in vacuo at 80°C to constant weight to obtain compound 81. Elemental analysis structure (molecular formula C 138 H 30 F 204 N3O6P3) Calculated values: C, 28.61; H, 0.52; F, 66.89; N, 0.73; P, 1.60; Found: C, 28.63; H, 0.55; F, 66.85; N, 0.71; P, 1.64. MALDI-TOF (m / z) found: 5792.72.

[0128] Synthesis Example 4: Synthesis of Compound 135:

[0129]

[0130] 1) Preparation of intermediate D1: Refer to the synthesis method of structure 1b-C8F17 in Nature Communications (2019), 10, (1), 1-6.

[0131] 2) Under nitrogen, to a 500 ml round-bottom flask, add raw material A2 (0.31 g, 1 mmol), intermediate D1 (3.74 g, 3.6 mmol), 1,4-dioxane (300 ml), and CsF (0.91 g, 6 mmol). Stir for 10 min. Then, add an orange catalyst solution of Pd(dba)2 (0.029 g, 0.05 mmol) and triphenylphosphine (0.031 g, 0.12 mmol) dissolved in 1,4-dioxane (10 ml) and stir until homogeneous. Heat the reaction mixture to 100°C and stir for 48 h. The reaction solution was taken for TCL detection, and it was found that the reaction of raw material A2 was complete. After the reaction was completed, the reaction system was naturally cooled to room temperature, and the solvent was removed under reduced pressure. The residue was added with water (100 ml) to precipitate a solid. The solid was filtered and the filter cake was washed with water (2*100 mL) and methanol (2*100 mL). It was then dried under vacuum at 80°C to constant weight to obtain compound 135. Elemental analysis structure (molecular formula C 72 H 12 F 102 ) Calculated values: C, 30.72; H, 0.43; F, 68.85; Found: C, 30.74; H, 0.45; F, 68.82. MALDI-TOF (m / z) found: 2813.88.

[0132] Synthesis Example 5: Synthesis of Compound 195:

[0133]

[0134] 1) Preparation of intermediate E1: The synthesis method of structure 3 (3, 4) in Journal of Combinatorial Chemistry, 6 (3), 363-374; 2004 was referred to.

[0135] 2) Under nitrogen protection, in a 500ml round-bottom flask, raw material A3 (0.74g, 1mmol) and diethyl ether (100ml) were added in sequence. After stirring for 10min, the reaction system was cooled to -78°C, 1.6mol / L n-butyllithium hexane solution (8mmol, 5ml) was added, and the mixture was stirred at -78°C for 2h. A mixed solution of intermediate E1 (6.79g, 8mmol) dissolved in diethyl ether (100ml) was added, and the reaction mixture was heated to room temperature and stirred for 60h. TCL detection of the reaction solution showed that the raw material A3 had reacted completely. After the reaction was completed, the reaction system was naturally cooled to room temperature and the solvent was removed under reduced pressure. The residue was added with water (100ml) to precipitate a solid, which was filtered. The filter cake was washed with water (2*100mL) and methanol (2*100mL), and then dried in vacuo at 80°C to constant weight to obtain compound 195. Elemental analysis structure (molecular formula C 126 H81 F 162 PSi6) Calculated values: C, 31.06; H, 1.68; F, 63.17; P, 0.64; Found: C, 31.05; H, 1.65; F, 63.18; P, 0.68. MALDI-TOF (m / z) found: 4870.24.

[0136] Synthesis Example 6: Synthesis of Compound 265:

[0137]

[0138] 1) Under nitrogen protection, in a 1000ml round-bottom flask covered with aluminum foil to avoid light, raw material A5 (4.72g, 20mmol), raw material B5 (23.85g, 44mmol), and DMSO (400ml) were added in sequence, stirred and mixed for 10min, and nitrogen was passed through for 30min to replace the air. Then, copper powder (6.35g, 100mmol) was added, and the reaction mixture was heated to reflux and stirred under reflux for 90h. TCL detection of the reaction solution showed that the raw material A5 had reacted completely. After the reaction was completed, the reaction system was naturally cooled to room temperature, poured into water (500m) and stirred for 30 minutes. After filtration, the filter cake was extracted with anhydrous ether (250ml*2). After the filtrate was separated, the aqueous phase was extracted with ether (200ml*3). The organic phases were combined, dried with anhydrous sodium sulfate, filtered, and the solvent was removed by rotary evaporation to obtain intermediate F1. Elemental analysis structure (molecular formula C 24 H 10 F 32 ) Calculated values: C, 31.81; H, 1.11; F, 67.08; Found: C, 31.87; H, 1.05; F, 67.04. MALDI-TOF (m / z) found: 906.33.

[0139] 3) Under nitrogen, to a 500 mL round-bottom flask, intermediate F1 (9.06 g, 10 mmol), pinacol diboronate (3.05 g, 12 mmol), and heptane (300 mL) were added sequentially. After purging with nitrogen for 30 min to displace the air, a catalyst suspension of [Ir(OE)2Cl]2 (CAS: 12246-51-4) (0.045 g, 0.05 mmol) and 4,4'-di-tert-butyl-2,2'-bipyridine (0.027 g, 0.1 mmol) dissolved in 8 mL of heptane was slowly added. The reaction system was heated to reflux and stirred for 15 h. After completion of the reaction, the reaction mixture was cooled to room temperature, poured into water (400 mL), and stirred for 10 minutes. After separation, the organic phase was extracted with brine (2 x 200 mL). The combined organic phases were dried over anhydrous sodium sulfate, and the solvent was removed by rotary evaporation under reduced pressure to yield intermediate G1. Elemental analysis structure (molecular formula C30 H 21 BF 32 O2) Calculated values: C, 34.91; H, 2.05; F, 58.90; Found: C, 34.96; H, 2.00; F, 58.98. MALDI-TOF (m / z) found: 1032.42.

[0140] 3) Under nitrogen, to a 500 ml round-bottom flask, raw material A2 (0.31 g, 1 mmol), intermediate G1 (3.72 g, 3.6 mmol), 1,4-dioxane (300 ml), and CsF (0.91 g, 6 mmol) were added sequentially. Stir for 15 min. A catalyst solution of Pd(dba)2 (0.029 g, 0.05 mmol) and triphenylphosphine (0.031 g, 0.12 mmol) dissolved in 1,4-dioxane (10 ml) was added and stirred until homogenous. The reaction mixture was heated to reflux and stirred for 55 h. The reaction solution was taken for TCL detection, and it was found that the reaction of raw material A2 was complete. After the reaction was completed, the reaction system was naturally cooled to room temperature, and the solvent was removed under reduced pressure. The residue was added with water (100 ml) to precipitate a solid. The solid was filtered and the filter cake was washed with water (2*100 mL) and methanol (2*100 mL). It was then dried under vacuum at 80°C to constant weight to obtain compound 265. Elemental analysis structure (molecular formula C 78 H 30 F 96 ) Calculated values: C, 33.57; H, 1.08; F, 65.35; Found: C, 33.55; H, 1.14; F, 65.30. MALDI-TOF (m / z) found: 2790.34.

[0141] II Determination of optical properties of compounds

[0142] On the glass substrate, through the vacuum evaporation device, at a vacuum degree of 1.0E -5 Under a pressure of Pa, a single film of the compound of the present invention with a thickness of 70 nm was evaporated; and the transmittance of the film was tested immediately after the evaporation.

[0143] Table 1

[0144]

[0145] It can be seen from the data in Table 1 above that the transmittance of the compound of the present invention at a wavelength greater than 400 nm is greater than 95%.

[0146] III Multilayer film structure

[0147] The following multilayer film structure is used to further illustrate the technical effect of the compound of the present invention as a cathode patterning material in inhibiting Mg:Ag deposition.

[0148] 1. Materials, Equipment, and Testing Methods Used in Examples

[0149] Material:

[0150] The five compounds in the synthesis examples and the following five comparative example compounds were prepared.

[0151]

[0152] equipment:

[0153] Vacuum evaporation equipment: Japan Choshu Industry 200*200mm evaporation equipment

[0154] Test Method

[0155] Transmittance: tested using a double-beam UV-visible spectrophotometer (Beijing Puxi General Company, model: TU-1901).

[0156] 2. Multilayer film structure implementation

[0157] The present invention evaporates a multilayer film structure to measure transmittance, and visually observes whether Mg and Ag coatings are deposited on a single film of CPM material.

[0158] Two CPM coatings with a thickness of approximately 10 nm were deposited on a glass substrate. One CPM coating was then subjected to a Mg:Ag mixed vapor flux until a reference layer thickness of 15 nm was achieved. The multilayer structures before and after the Mg:Ag deposition were visually analyzed, and the transmittance of the Mg:Ag-deposited multilayer structures was measured against that of the undeposited structures.

[0159] The researchers deposited two electron-conducting films on a glass substrate, followed by two approximately 10nm thick CPM coatings. One of the CPM coatings was then subjected to a Mg:Ag mixed vapor flux until a reference layer thickness of 15nm was achieved. The multilayer structures before and after the Mg:Ag deposition were visually analyzed, and the transmittance of the Mg:Ag-deposited multilayer structures was measured against that of the undeposited structures.

[0160] The reference layer thickness in the embodiments described herein refers to the thickness of the Mg:Ag (1:9) layer deposited on the reference surface. The reference surface refers to the surface of the crystal oscillator located within the evaporation equipment, which is used to monitor the evaporation rate and the reference layer thickness. That is, the reference layer thickness does not represent the actual film thickness of the Mg:Ag (1:9) co-evaporated layer deposited on the surface of the CPM material single film coating. On the contrary, the reference layer thickness refers to the thickness of the Mg:Ag (1:9) co-evaporated coating layer co-deposited on the crystal oscillator surface when the CPM material single film coating surface and the crystal oscillator surface are subjected to the same Mg:Ag (1:9) co-evaporated vapor flux during the same evaporation process period.

[0161] 3. Multilayer Film Structure Example

[0162] Structure of Multilayer Film Structure Example M: Glass / CPM (10 nm);

[0163] Structure of Multilayer Film Structure Example N: Glass / CPM (10 nm) / Mg:Ag=1:9 (15 nm)

[0164] The CPM material is placed in an evaporation source in an organic chamber of a vacuum evaporation device, and Mg and Ag are placed in two evaporation sources in a metal chamber of the vacuum evaporation device respectively;

[0165] Example M Preparation method: On two glass substrates (Glass), a vacuum evaporation device is used to form a 1.0E vacuum film. -5 Under the pressure of Pa, the evaporation rate of CPM material is controlled to be A single CPM film with a thickness of 10 nm was deposited by evaporation for 100 s, resulting in a two-film structure Glass / CPM (10 nm).

[0166] Example N Preparation method: On a piece of film structure Glass / CPM (10nm) obtained in Example M; continue to vacuum 1.0E -5 Under the pressure of Pa, the Mg evaporation rate is controlled to Control the Ag evaporation rate to The co-evaporation was continued for 100 s to obtain a Mg:Ag (1:9) coating with a crystal film thickness of 15 nm;

[0167] The structures and preparation methods of multilayer film structure embodiments M-1, M-2, M-3, M-4, M-5, and M-6 are similar to those of embodiment M, except that compounds 16, 75, 81, 135, 195, and 265 of the present invention are used as CPM materials, respectively;

[0168] The structures and preparation methods of multilayer film structure comparison examples M-01, M-02, M-03, M-04, and M-05 are similar to those of Example M, except that comparative compounds CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 are used as CPM materials, respectively;

[0169] The structures and preparation methods of multilayer film structure embodiments N-1, N-2, N-3, N-4, N-5, and N-6 are similar to those of embodiment N, except that compounds 16, 75, 81, 135, 195, and 265 of the present invention are used as CPM materials, respectively;

[0170] The structures and preparation methods of multilayer film structure comparison examples N-01, N-02, N-03, N-04, and N-05 are similar to those of Example N, except that the compounds of the present invention CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 are used as CPM materials, respectively;

[0171] The structure and fabrication method of the multilayer film structure comparative example N-06 were similar to those of Example N, except that the CPM material was not used and the Mg:Ag (1:9) coating was directly deposited on the glass substrate;

[0172] After the multilayer film structure examples were prepared, the transmittance of Example N and Comparative Example M (i.e., the coating after Mg:Ag vapor deposition versus the coating without Mg:Ag vapor deposition) was measured using a UV-visible spectrophotometer to determine the relative amounts of Mg:Ag deposited on the CPM film surface. Table 2 summarizes the transmittance measurements at wavelengths of 460 nm and 620 nm for the multilayer film structures Example N, Comparative Example M, and Comparative Examples after Mg:Ag vapor deposition using different CPM materials.

[0173] Table 2

[0174]

[0175]

[0176] The transmittance of the known structures CPM01, CPM02, CPM-03, CPM-04, and CPM-05, whether Mg:Ag can be deposited, and the transmittance performance after Mg:Ag deposition are not disclosed in the published literature.

[0177] The data in Table 2 demonstrate that, compared to comparative examples CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05, the multilayer film examples prepared using compounds 16, 75, 81, 135, 195, and 265 of the present invention as CPM materials exhibited relatively high transmittance exceeding 90%, representing transmittance improvements of over 20%. Compared to a pure 15nm thick Mg:Ag (1:9) film directly deposited on a glass substrate without CPM material, the transmittance of multilayer film Example N using compounds of the present invention as CPM materials increased by over 77%. This high optical transmittance indicates the presence of a relatively small amount of Mg:Ag coating on the surface of the films of the present invention compounds, with some films exhibiting virtually no Mg:Ag deposition. Therefore, the compounds of the present invention effectively inhibit the deposition of Mg and Ag, enabling the selective deposition of a mixed Mg and Ag coating, which is beneficial for cathode patterning applications.

[0178] 4. Multilayer Film Structure Example

[0179] Structure of multilayer film structure Example U: Glass / ETL (30 nm) / CPM (10 nm);

[0180] Structure of Multilayer Film Structure Example V: Glass / ETL (30 nm) / CPM (10 nm) / Mg:Ag=1:9 (15 nm)

[0181] Liq, ET material, and CPM material are placed in different evaporation sources in the organic chamber of a vacuum evaporation device, and Mg and Ag are placed in two evaporation sources in the metal chamber of the vacuum evaporation device respectively;

[0182] Example U Preparation method: On two glass substrates (Glass), a vacuum evaporation device is used to form a film at a vacuum degree of 1.0E. -5 Under the pressure of Pa, the ETL film with a thickness of 30nm is evaporated; the evaporation rate of the CPM material is controlled to be The CPM film layer with a thickness of 10 nm was achieved by evaporation for 100 s, and two film structures of Glass / ETL (30 nm) / CPM (10 nm) were obtained.

[0183] Example V Preparation method: On a piece of film structure Glass / ETL (30nm) / CPM (10nm) obtained in Example U; continue to vacuum 1.0E -5 Under the pressure of Pa, the Mg evaporation rate is controlled to Control the Ag evaporation rate to The co-evaporation was continued for 100 s to obtain a Mg:Ag (1:9) coating with a crystal film thickness of 15 nm;

[0184] The structures and preparation methods of multilayer film structure embodiments U-1, U-2, U-3, U-4, and U-5 are similar to those of embodiment U, except that compounds 16, 75, 81, 135, and 195 of the present invention are used as CPM materials, respectively; ET-1 is used as ETL material;

[0185] The structures and manufacturing methods of multilayer film structure embodiments U-6 to U-10, embodiments U-11 to U-15, and embodiments U-16 to U-20 are similar to those of embodiments U-1 to U-5, except that ET-2, ET-3, and ET-4 are used as ETL materials, respectively;

[0186] The structures and preparation methods of the multilayer film structure comparison examples U-01, U-02, U-03, U-04, and U-05 are similar to those of Example U, except that the comparative compounds CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 are used as CPM materials, respectively; and ET-1 is used as the ETL material.

[0187] The structures and fabrication methods of multilayer film structures of comparative examples U-06 to U-010, comparative examples U-011 to U-015, and comparative examples U-016 to U-020 are similar to those of examples U-01 to U-05, except that ET-2, ET-3, and ET-4 are used as ETL materials, respectively;

[0188] The structures and preparation methods of multilayer film structure examples V-1, V-2, V-3, V-4, and V-5 are similar to those of example V, except that compounds 16, 75, 81, 135, and 195 of the present invention are used as CPM materials, respectively; ET-1 is used as ETL material;

[0189] The structures and manufacturing methods of multilayer film structure examples V-6 to V-10, examples V-11 to V-15, and examples V-16 to V-20 are similar to those of examples V-1 to V-5, except that ET-2, ET-3, and ET-4 are used as ETL materials, respectively;

[0190] The structure and preparation method of multilayer film structure Example V-21 are similar to those of Example V-1, except that Compound 265 of the present invention is used instead of Compound 16 as the CPM material; The structure and preparation method of multilayer film structure Example U-21 are similar to those of Example U-1, except that Compound 265 of the present invention is used instead of Compound 16 as the CPM material;

[0191] The structures and preparation methods of multilayer film structure embodiments V-22, V-23, and V-24 are similar to those of embodiment V-21, except that ET-2, ET-3, and ET-4 are used instead of ET-1 as the ETL material, respectively. The structures and preparation methods of multilayer film structure embodiments U-22, U-23, and U-24 are similar to those of embodiment U-21, except that ET-2, ET-3, and ET-4 are used instead of ET-1 as the ETL material, respectively.

[0192] The structures and preparation methods of multilayer film structure comparative examples V-01, V-02, V-03, V-04, and V-05 are similar to those of Example V, except that the compounds of the present invention CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 are used as CPM materials, respectively; and ET-1 is used as ETL material.

[0193] The structures and manufacturing methods of multilayer film structure embodiments V-06 to V-010, embodiments V-011 to V-015, and embodiments V-016 to V-020 are similar to those of embodiments V-01 to V-05, except that ET-2, ET-3, and ET-4 are used as ETL materials, respectively;

[0194] After the multilayer film structure examples were prepared, the transmittance of Example V and Reference Example U (i.e., the coating after Mg:Ag deposition versus the coating without Mg:Ag deposition) was measured using a UV-visible spectrophotometer to determine the relative amounts of Mg:Ag deposited on the surface of the Glass / ETL (30nm) / CPM (10nm) film layer. Table 3 summarizes the transmittance measurements at wavelengths of 460nm and 620nm for the multilayer film structures Example V, Reference Example U, and their comparative examples, after different CPM materials were deposited on the ETL film layer and then Mg:Ag was evaporated.

[0195] Table 3

[0196]

[0197]

[0198]

[0199] The data in Table 3 demonstrate that the CPM materials of the present invention can be deposited on the ETL layer of a single ET material, and that Mg:Ag can be deposited on the CPM material. Compared to comparative examples CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05, the multilayer film examples prepared using compounds 16, 75, 81, 135, 195, and 265 of the present invention as CPM materials exhibited relatively high transmittance exceeding 90% at wavelengths between 460 nm and 620 nm, representing a transmittance improvement of over 20%. This high optical transmittance indicates the presence of a relatively small amount of Mg:Ag coating on the surface of the Glass / ETL (30 nm) / CPM (10 nm) multilayer film, with some films exhibiting virtually no Mg:Ag deposition. Therefore, the compounds of the present invention effectively inhibit the deposition of Mg and Ag, enabling the selective deposition of a mixed Mg and Ag coating, which is beneficial for cathode patterning applications.

[0200] 5. Multilayer Film Structure Example

[0201] Structure of multilayer film structure Example P: Glass / ET:Liq=1:1 (30 nm) / CPM (10 nm);

[0202] Structure of multilayer film structure Example Q: Glass / ET:Liq=1:1 (30 nm) / CPM (10 nm) / Mg:Ag=1:9 (15 nm)

[0203] Liq, ET material, and CPM material are placed in different evaporation sources in the organic chamber of a vacuum evaporation device, and Mg and Ag are placed in two evaporation sources in the metal chamber of the vacuum evaporation device respectively;

[0204] Example P Preparation method: On two glass substrates (Glass), a vacuum evaporation device is used to form a film at a vacuum degree of 1.0E. -5 Under the pressure of Pa, ET-material and Liq were co-evaporated, the mass ratio of ET and Liq was 1:1, and the ETL film layer with a film thickness of 30nm was formed; on the ETL film layer, the evaporation rate of CPM material was controlled to be The CPM film layer with a thickness of 10 nm was formed by evaporation for 100 s, and two film structures were obtained: Glass / ET:Liq=1:1(30 nm) / CPM(10 nm);

[0205] Example Q Preparation Method: On a film structure Glass / ET:Liq=1:1(30nm) / CPM(10nm) obtained in Example P; continue to vacuum 1.0E -5 Under the pressure of Pa, the Mg evaporation rate is controlled to Control the Ag evaporation rate to The co-evaporation was continued for 100 s to obtain a Mg:Ag (1:9) coating with a crystal film thickness of 15 nm;

[0206] The structures and preparation methods of multilayer film structure examples P-1, P-2, P-3, P-4, and P-5 are similar to those of example P, except that compounds 16, 75, 81, 135, and 195 of the present invention are used as CPM materials, respectively; ET-1 replaces ET;

[0207] The structures and preparation methods of multilayer film structure embodiments P-6 to P-10, embodiments P-11 to P-15, and embodiments P-16 to P-20 are similar to those of embodiments P-1 to P-5, except that ET-2, ET-3, and ET-4 are used instead of ET1, respectively;

[0208] The structures and preparation methods of the multilayer film structure comparison examples P-01, P-02, P-03, P-04, and P-05 are similar to those of Example P, except that comparative compounds CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 are used as CPM materials, respectively; ET-1 replaces ET;

[0209] The structures and preparation methods of the multilayer film structures of comparative examples P-06 to P-010, comparative examples P-011 to P-015, and comparative examples P-016 to P-020 are similar to those of examples P-01 to P-05, except that ET-2, ET-3, and ET-4 are used instead of ET1, respectively;

[0210] The structures and preparation methods of multilayer film structure examples Q-1, Q-2, Q-3, Q-4, and Q-5 are similar to those of example Q, except that compounds 16, 75, 81, 135, and 195 of the present invention are used as CPM materials, respectively; ET-1 replaces ET;

[0211] The structures and preparation methods of multilayer film structure examples Q-6 to Q-10, examples Q-11 to Q-15, and examples Q-16 to Q-20 are similar to those of examples Q-1 to Q-5, except that ET-2, ET-3, and ET-4 are used instead of ET1, respectively;

[0212] The structure and preparation method of multilayer film structure Example P-21 are similar to those of Example P-1, except that Compound 265 of the present invention is used instead of Compound 16 as the CPM material; The structure and preparation method of multilayer film structure Example Q-21 are similar to those of Example Q-1, except that Compound 265 of the present invention is used instead of Compound 16 as the CPM material;

[0213] The structures and preparation methods of multilayer film structure embodiments P-22, P-23, and P-24 are similar to those of embodiment P-21, except that ET-2, ET-3, and ET-4 are used instead of ET-1 as ETL materials, respectively. The structures and preparation methods of multilayer film structure embodiments Q-22, Q-23, and Q-24 are similar to those of embodiment Q-21, except that ET-2, ET-3, and ET-4 are used instead of ET-1 as ETL materials, respectively.

[0214] The structures and preparation methods of multilayer film structure comparison examples Q-01, Q-02, Q-03, Q-04, and Q-05 are similar to those of Example Q, except that the compounds CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 of the present invention are used as CPM materials, respectively; ET-1 replaces ET;

[0215] The structures and preparation methods of multilayer film structure embodiments Q-06 to Q-010, embodiments Q-011 to Q-015, and embodiments Q-016 to Q-020 are similar to those of embodiments Q-01 to Q-05, except that ET-2, ET-3, and ET-4 are used instead of ET-1, respectively;

[0216] Table 4 summarizes the transmittance measurements of the multilayer film structures Example Q, Reference Example P and their comparative examples after different CPM materials were deposited on the mixed ET:Liq film layer and then evaporated with Mg:Ag at wavelengths of 460nm and 620nm.

[0217] Table 4

[0218]

[0219]

[0220]

[0221]

[0222] The data in Table 4 demonstrate that the CPM compounds of the present invention can be deposited on a 1:1 (30 nm) glass / ET:Liq film, and that Mg:Ag can be deposited on the CPM material. Compared to comparative examples CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05, the multilayer film examples prepared using compounds 16, 75, 81, 135, 195, and 265 of the present invention as the CPM material exhibited relatively high transmittance exceeding 90% at wavelengths between 460 nm and 620 nm, representing a transmittance improvement of over 20%. This high optical transmittance indicates the presence of a relatively small amount of Mg:Ag coating on the surface of the 1:1 (30 nm) glass / ET:Liq / CPM (10 nm) multilayer film, with some films exhibiting virtually no Mg:Ag deposition. Therefore, the compounds of the present invention effectively inhibit the deposition of Mg and Ag, enabling the selective deposition of a mixed Mg and Ag coating, which is beneficial for cathode patterning applications.

[0223] Therefore, whether on a glass substrate, a single ET material film layer substrate or (ET and Liq mixed vapor film layer substrate), the CPM compound of the present invention can be deposited into a uniform and flat film, and only tiny or basically no Mg:Ag is deposited on the CPM film layer. Therefore, the compound of the present invention can effectively inhibit the deposition of Mg and Ag, and realize the selective deposition of Mg and Ag mixed vapor coating, which is beneficial to cathode patterning applications, and is beneficial to obtaining higher transmittance in OLED displays. It can be applied to the technical direction of OLED under-screen cameras, which is beneficial to improving the transmittance of OLED screen under-screen cameras.

[0224] In summary, the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. An organic compound containing a polyfluorinated long chain, characterized in that: The organic compound has the structure shown in general formula (1) and general formula (2): In the general formula (2), X1, X2, and X3 are each independently a fluorine atom or a hydrogen atom; at least one of X1, X2, and X3 is a hydrogen atom; In general formula (1) and general formula (2), A is independently represented by the structure shown in formula (2) and formula (3); In general formula (1) and general formula (2), n=3 or 6; In general formula (1) and general formula (2), m = 1, 2 or 3; In the general formula (1) and the general formula (2), Ar1 is independently a single bond, L1 is represented by -(O) i -(CH2) j -(CF2) k -; i=0 or 1; j=0, 1, 2, 3, 4, 5, 6, 7, or 8; k=0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10; When A is represented by formula (2) and Ar1 is a single bond, i=0, and L1 is -(CH2) j -(CF2) k -; When A is represented by formula (3), Ar1 is represented by j+k≥1; preferably ≥2; preferably ≥3; L2 represents a single bond, -O-, a substituted or unsubstituted C1-C20 alkylene group, a substituted or unsubstituted C1-C20 silylene group, a substituted or unsubstituted C1-C20 alkyleneoxy group, or a substituted or unsubstituted C1-C20 silyleneoxy group; L1 and L2 may be the same or different; The substituent of the "substituted or unsubstituted" group is optionally selected from fluorine atoms.

2. The organic compound containing a polyfluorinated long chain according to claim 1, characterized in that The structures of the organic compounds are shown in the general formulas (I-1), (I-3), (I-4), (I-6), (I-8), and (I-9): L1 is represented by -(O) i -(CH2) j -(CF2) k -; i=0 or 1; j=0, 1, 2, 3, 4, 5, 6, 7, or 8; k=0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10; L2 represents a single bond, -O-, a substituted or unsubstituted C1-C20 alkylene group, a substituted or unsubstituted C1-C20 silylene group, a substituted or unsubstituted C1-C20 alkyleneoxy group, or a substituted or unsubstituted C1-C20 silyleneoxy group; L1 and L2 can be the same or different; X1, X2, and X3 are each independently a fluorine atom or a hydrogen atom; at least one of X1, X2, and X3 is a hydrogen atom; In the general formula (I-3), general formula (I-4), general formula (I-8), and general formula (I-9), q=2 or 3.

3. The organic compound containing a polyfluorinated long chain according to claim 1, characterized in that The structures of the organic compounds are shown in general formulas (III-1), (III-2), (III-3), and (III-4): Said a1, b1, c4, d4 are each independently represented by 0, 1, 2, 3, 4, 5, 6, 7 or 8; Said a2, b2, c5, d5 are each independently represented by 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10; Said c2 and d2 are each independently represented as 0, 1, 2, 3 or 4; Said c1, c3, d1, d3 are each independently represented as 0 or 1; Said q is independently represented as 2 or 3; Preferably, a1+a2≥2; b1+b2≥2; c2+c4+c5≥2; d2+d4+d5≥2; Preferably, a1+a2≥4; b1+b2≥4; c2+c4+c5≥4; d2+d4+d5≥4.

4. The organic compound containing a polyfluorinated long chain according to claim 3, characterized in that The structures of the organic compounds are shown in the general formulas (IV-1), (IV-2), (IV-3), (IV-4), (IV-5), (IV-7), and (IV-8): The definitions of c4, c5, d4, d5, and q are the same as those in claim 3.

5. The organic compound containing a polyfluorinated long chain according to claim 1, characterized in that L1 and L2 each independently represent -O-, -O-CH2-, -O-(CH2)2-, -O-(CH2)3-, -O-(CH2)4-, -O-(CH2)5-, -O-(CH2)6-, -O(CH2)7-, -O(CH2)8-, -O(CH2)9-, -O(CH2) 10 -, -CH2-, -(CH2)2-, -(CH2)3-, -(CH2)4-, -(CH2)5-, -(CH2)6-, -(CH2)7-, -(CH2)8-, -(CH2)9-, -(CH2) 10 -, -CF2-, -(CF2)2-, -(CF2)3-, -(CF2)4-, -(CF2)5-, -(CF2)6-, -(CF2)7-, -(CF2)8-, -(CF2)9-, -(CF2) 10 -, -CH2CF2-, -CH2(CF2)2-, -CH2(CF2)3-, -CH2(CF2)4-, -CH2(CF2)5-, -CH2(CF2)6-, -CH2(CF2)7-, -CH2(CF2)8-, -CH2(CF2)9-, -CH2(CF2) 10 -, -(CH2)2CF2-, -(CH2)2(CF2)2-, -(CH2)2(CF2)3-, -(CH2)2(CF2)4-, -(CH2)2(CF2)5-, -(CH2)2(CF2)6-, -(CH2)2(CF2)7-, -(CH2)2(CF2)8-, -(CH2)2(CF2)9-, -(CH2)2(CF2) 10 -, -(CH2)3CF2-, -(CH2)3(CF2)2-, -(CH2)3(CF2)3-, -(CH2)3(CF2)4-, -(CH2)3(CF2)5-, -(CH2)3(CF2)6-, -(CH2)3(CF2)7-, -(CH2)3(CF2)8-, -(CH2)3(CF2)9-, -(CH2)3(CF2) 10 -, -(CH2)4CF2-, -(CH2)4(CF2)2-, -(CH2)4(CF2)3-, -(CH2)4(CF2)4-, -(CH2)4(CF2)5-, -(CH2)4(CF2)6-, -(CH2)4(CF2)7-, -(CH2)4(CF2)8-, -(CH2)4(CF2)9-, -(CH2)4(CF2) 10 -, -O-CF2-, -O-(CF2)2-, -O-(CF2)3-, -O-(CF2)4-, -O-(CF2)5-, -O-(CF2)6-, -O-(CF2)7-, -O-(CF2)8-, -O-(CF2)9-, -O-(CF2) 10 -, -O-CH2CF2-, -O-CH2(CF2)2-, -O-CH2(CF2)3-, -O-CH2(CF2)4-, -O-CH2(CF2)5-, -O-CH2(CF2)6-, -O-CH2(CF2)7-, -O-CH2(CF2)8-, -O-CH2(CF2)9-, -O-CH2(CF2) 10 -, -O-(CH2)2CF2-, -O-(CH2)2(CF2)2-, -O-(CH2)2(CF2)3-, -O-(CH2)2(CF2)4-, -O-(CH2)2(CF2)5 -, -O-(CH2)2(CF2)6-, -O-(CH2)2(CF2)7-, -(CH2)2(CF2)8-, -O-(CH2)2(CF2)9-, -O-(CH2)2(CF2) 10 -, -(CH2)3CF2-, -(CH2)3(CF2)2-, -(CH2)3(CF2)3-, -(CH2)3(CF2)4-, -(CH2)3(CF2)5-, -(C H2)3(CF2)6-, -O-(CH2)3(CF2)7-, -O-(CH2)3(CF2)8-, -O-(CH2)3(CF2)9-, -O-(CH2)3(CF2) 10 -, -O-(CH2)4CF2-, -O-(CH2)4(CF2)2-, -O-(CH2)4(CF2)3-, -O-(CH2)4(CF2)4-, -O-(CH2)4(CF2)5- , -O-(CH2)4(CF2)6-, -O-(CH2)4(CF2)7-, -O-(CH2)4(CF2)8-, -O-(CH2)4(CF2)9- or -O-(CH2)4(CF2) 10 -; L2 may also represent a single bond; L1 and L2 may be the same or different.

6. The organic compound containing a polyfluorinated long chain according to claim 1, characterized in that The specific structural formula of the organic compound is any one of the following structures:

7. The organic compound containing a polyfluorinated long chain according to claim 1, characterized in that The organic compound structure is any one of the following general structures (VI-1) to (VI-7): The independent tables of Rf are Rf-1 to Rf-330; the specific structures of Rf-1 to Rf-330 are as follows:

8. The organic compound containing a polyfluorinated long chain according to claim 8, characterized in that The specific structure of the organic compound is any one of Compound 251 to Compound 580: The structures of compounds 251 to 580 are (Formula VI-4) wherein Rf corresponds to Rf-1 to Rf-330; the organic compound is preferably Compound 251 to Compound 272; Compound 427 to Compound 436; 9. The organic compound containing a polyfluorinated long chain according to any one of claims 1 to 8, characterized in that: The transmittance of the organic compound at a wavelength of 400 nm is greater than 90%, preferably greater than 95%, and more preferably greater than 100%; the transmittance at a wavelength of 460 nm is greater than 90%, preferably greater than 95%, and more preferably greater than 100%; and the transmittance at a wavelength of 620 nm is greater than 90%, preferably greater than 95%, and more preferably greater than 100%.

10. A multilayer film structure, comprising: an organic functional layer, a cathode patterning layer, and a cathode layer; The cathode patterned layer is located between the organic functional layer and the cathode layer; It is characterized in that the cathode patterned layer comprises one or more of the polyfluorinated long-chain organic compounds according to any one of claims 1 to 8.

11. An OLED optoelectronic device comprising: substrate; an anode layer, the anode layer being disposed on the substrate; an organic functional layer, the organic functional layer being disposed on the anode layer; a cathode patterned layer, the cathode patterned layer being disposed on the organic functional layer; a cathode layer, the cathode layer being disposed on the cathode patterned layer; It is characterized by: The cathode patterned layer comprises one or more of the polyfluorinated long-chain organic compounds according to any one of claims 1 to 8.

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