Gas supply system, thin film deposition equipment and control method of thin film deposition equipment

Abstract

The invention provides a gas supply system, thin film deposition equipment and a control method of the thin film deposition equipment. The gas supply system comprises a first filling tank, the internal space of the first filling tank is divided into a first area and a second area through a first balance valve plate, the first area is connected with a first gas source, the input end of the second area is connected with a second gas source, and the output end of the second area is connected with a process chamber; the first balance valve plate is connected with the inner wall of the first filling tank in a sealed and sliding mode. And the first gas source is used for outputting the second gas provided by the second gas source to the process chamber in the second area, providing the first gas to the first area and driving the first balance valve plate to slide towards the output end of the second area so as to keep the gas pressure intensity of the second area unchanged.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a gas supply system, a thin film deposition device, and a control method for the thin film deposition device. Background Art

[0002] In some applications within semiconductor manufacturing, deep trench thin-film deposition processes are required. For example, in flash memory chips, deep trench structures are used to form memory cells to increase storage density. For example, the floating-gate transistors in NAND flash memory require the deposition of multiple thin films within the deep trench, including the gate oxide layer and polysilicon gate. The deep trench thin-film deposition process precisely controls the thickness and quality of these films, ensuring the performance and reliability of the memory cells, enabling higher storage capacity and faster read / write speeds. Another example is in microelectromechanical system (MEMS) sensors, where deep trench structures are commonly used to manufacture sensitive components such as accelerometers and gyroscopes. For example, in accelerometers, deep trench thin-film deposition processes are used to form thin films such as electrodes and support structures within the trenches. These films require excellent mechanical and electrical properties, and deep trench thin-film deposition processes can meet these requirements, enabling MEMS accelerometers to exhibit high precision, high sensitivity, and low power consumption.

[0003] In deep trench thin film deposition, the reactant source must be injected into the deep trench at a certain concentration and high pressure for the reaction to occur. Therefore, existing thin film deposition equipment often uses a filling tank structure. This filling tank must first be mixed with inert gas to maintain the pressure of the reactant source before deposition begins. The pressure is then maintained constant throughout the deposition process by continuously introducing carrier gas. However, this continuous pressure stabilization method of introducing carrier gas causes the reactant source gas concentration to continuously decrease, which adversely affects the uniformity and quality stability of the product.

[0004] In order to overcome the above-mentioned defects of the prior art, a filling tank technology has been developed in this field to ensure that the concentration of the reaction source gas input into the reaction chamber remains consistent while maintaining a constant high-pressure state, thereby effectively avoiding changes in gas concentration caused by pressure fluctuations, and improving the stability and consistency of the chemical reaction in the reaction chamber. Summary of the Invention

[0005] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a gas supply system, a thin film deposition device, and a control method for the thin film deposition device, which are used to ensure that the concentration of the reaction source gas input into the reaction chamber remains consistent while maintaining a constant high-pressure state, thereby effectively avoiding changes in gas concentration caused by pressure fluctuations, and improving the stability and consistency of the chemical reaction in the reaction chamber.

[0007] Specifically, a gas supply system according to a first aspect of the present invention includes: a first filling tank, the interior space of which is divided into a first area and a second area via a first balancing valve, wherein the first area is connected to a first gas source, an input end of the second area is connected to a second gas source, and an output end of the second area is connected to a process chamber;

[0008] The first balancing valve plate is sealed and slidably connected to the inner wall of the first filling tank; and the first gas source is used to provide the first gas to the first area while the second area outputs the second gas provided by the second gas source to the process chamber, driving the first balancing valve plate to slide toward the output end of the second area to maintain the gas pressure in the second area unchanged.

[0009] Furthermore, in some embodiments of the present invention, the first gas source is an inert gas source and is connected to an input end of the second region, for providing the first gas to the second region during a purge phase to clean the second region.

[0010] Furthermore, in some embodiments of the present invention, the gas supply system also includes a second gas source, wherein the second gas source is an inert gas source, which blows inert gas into the liquid reaction source during the source replenishment stage to provide an aerosol carrying liquid reactants to the second area, and / or provides the inert gas to the second area during the gas replenishment stage to adjust the concentration of the aerosol.

[0011] Furthermore, in some embodiments of the present invention, the gas supply system further includes: a sealing ring, provided between the first balancing valve plate and the inner wall of the first filling tank, for preventing gas leakage between the first area and the second area.

[0012] Furthermore, in some embodiments of the present invention, the air supply system also includes: a heating wire, wound around the outer surface of the first filling tank, for heating the first filling tank; and thermal insulation cotton, wrapped around the outside of the heating wire, for uniformly heating the first filling tank.

[0013] Furthermore, in some embodiments of the present invention, the gas supply system also includes: a second filling tank, the internal space of which is divided into a third area and a fourth area by a second balancing valve plate, wherein the third area is connected to the first gas source, the input end of the fourth area is connected to the second gas source, and the output end is connected to the process chamber; and a second balancing valve plate, which is sealed and slidably connected to the inner wall of the second filling tank, wherein the first gas source also supplies the first gas to the third area while outputting the second gas to the process chamber from the fourth area, driving the second balancing valve plate to slide toward the output end of the fourth area to maintain the gas pressure in the fourth area unchanged, the first filling tank and the second filling tank alternately output the second gas to the process chamber, the second gas source reuses the time when the first filling tank outputs the second gas to the process chamber to replenish the second filling tank, and reuses the time when the second filling tank outputs the second gas to the process chamber to replenish the first filling tank.

[0014] In addition, the thin film deposition apparatus provided according to the second aspect of the present invention includes: a gas supply system as described in any one of the first aspect of the present invention; and a process chamber connected to the output end of the second region of the first filling tank.

[0015] Furthermore, in some embodiments of the present invention, the thin film deposition apparatus further comprises: a vacuum pump connected to at least an output end of the second region of the first filling tank to extract residual gas in the second region.

[0016] In addition, the control method of the thin film deposition equipment provided according to the third aspect of the present invention includes the following steps: providing a second gas to the second area of its first filling tank via a second gas source of a gas supply system as described in any one of the first aspects of the present invention; and in response to the process of providing the second gas to the second area reaching a preset first time, outputting the second gas to the process chamber via the output end of the second area, and at the same time providing the first gas to the first area of the first filling tank via the first gas source, driving the first balancing valve plate to slide toward the output end of the second area to maintain the gas pressure in the second area unchanged.

[0017] Furthermore, in some embodiments of the present invention, after outputting the second gas to the process chamber, the control method further includes the following steps: providing the first gas to the second area via the first gas source, and extracting gas from the second area via a vacuum pump to purge the second area.

[0018] Furthermore, in some embodiments of the present invention, the control method of the thin film deposition equipment also includes the following steps: while the second area of the first filling tank outputs the second gas to the process chamber, the second gas is reused during this time to provide the fourth area of the second filling tank via the second gas source; and in response to the process of providing the second gas to the fourth area reaching the first time and completing the purge of the second area, the second gas is output to the process chamber via the output end of the fourth area, and the first gas is provided to the third area via the first gas source, driving the second balance valve plate to slide toward the output end of the fourth area to maintain the gas pressure in the fourth area unchanged.

[0019] Furthermore, in some embodiments of the present invention, the second gas source is an inert gas source, which blows inert gas into the liquid reaction source during the source replenishment stage to provide an aerosol carrying the corresponding liquid reactant to the second region. The control method also includes the following steps: in response to the process of providing the aerosol to the second region reaching the first time, first providing the inert gas to the second region via the second gas source to adjust the concentration of the aerosol, and then outputting the aerosol to the process chamber.

[0020] Furthermore, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions, which, when executed by a processor, implement the control method for a thin film deposition device as described in any one of the third aspects of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above features and advantages of the present invention will be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0022] Figure 1 A schematic diagram of the principles of thin film deposition equipment provided according to some embodiments of the present invention is shown.

[0023] Figure 2 A schematic diagram showing the principles of an air supply system provided according to some embodiments of the present invention is shown.

[0024] Figure 3 A schematic structural diagram of a sealing ring provided according to some embodiments of the present invention is shown.

[0025] Figure 4 A schematic diagram illustrating the principles of a control method for a thin film deposition device provided according to some embodiments of the present invention is shown.

[0026] Figure 5A flow chart of a control method for a thin film deposition device according to some embodiments of the present invention is shown.

[0027] Reference numerals:

[0028] 10 First gas source

[0029] 11 Second gas source

[0030] 12 Liquid reaction source

[0031] 20 First Fill Tank

[0032] 201 First Area

[0033] 202 Second Area

[0034] 203 First balancing valve plate

[0035] 30 Second filling tank

[0036] 301 Third Area

[0037] 302 Fourth Area

[0038] 303 Second balancing valve

[0039] 40 sealing ring

[0040] 50 process chambers

[0041] 60 Vacuum Pump

[0042] AV1~AV10, AV51, AV61, AV81 valves DETAILED DESCRIPTION

[0043] The following specific embodiments illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0044] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0045] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0046] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0047] As mentioned above, in deep trench thin film deposition processes, the reactant source must be injected into the deep trench at a certain concentration and relatively high pressure for gas reaction. Therefore, existing thin film deposition equipment often utilizes a filling tank structure. This filling tank must first be mixed with an inert gas to maintain the pressure of the reactant source before deposition begins. Subsequently, a carrier gas is continuously introduced during the deposition process to maintain a constant pressure throughout the deposition process. However, this continuous introduction of carrier gas to maintain pressure stabilization can cause the reactant source gas concentration to continuously decrease, adversely affecting product uniformity and quality stability.

[0048] In order to overcome the above-mentioned defects of the prior art, the present invention provides a gas supply system, a thin film deposition device, and a control method for the thin film deposition device, which are used to ensure that the concentration of the reaction source gas input into the reaction chamber remains consistent while maintaining a constant high-pressure state, thereby effectively avoiding changes in gas concentration caused by pressure fluctuations, and improving the stability and consistency of the chemical reaction in the reaction chamber.

[0049] In some non-limiting embodiments, the gas supply system provided in the first aspect of the present invention can be configured in the thin film deposition equipment provided in the second aspect of the present invention. The control method of the thin film deposition equipment provided in the third aspect of the present invention can be implemented based on the thin film deposition equipment provided in the second aspect of the present invention. Specifically, the thin film deposition equipment is configured with a memory and a processor. The memory includes but is not limited to the computer-readable storage medium provided in the fourth aspect of the present invention, which stores computer instructions. The processor is connected to the memory and is configured to execute the computer instructions stored in the memory to implement the control method of the thin film deposition equipment provided in the third aspect of the present invention.

[0050] Please refer to Figure 1 , Figure 1 A schematic diagram of the principles of thin film deposition equipment provided according to some embodiments of the present invention is shown.

[0051] like Figure 1 As shown, the thin film deposition apparatus includes a gas supply system, a process chamber 50, and a vacuum pump 60. The process chamber 50 is connected to the output end of the second region 202 of the first filling tank 20. The vacuum pump 60 is connected to at least the output end of the second region 202 of the first filling tank 20 to extract residual gas in the second region 202.

[0052] Please refer to Figure 2 , Figure 2 A schematic diagram showing the principles of an air supply system provided according to some embodiments of the present invention is shown.

[0053] like Figure 2 As shown, the gas supply system includes a first filling tank 20, a first balancing valve plate 203, and a first gas source 10. Specifically, the interior space of the first filling tank 20 is divided into a first region 201 and a second region 202 by the first balancing valve plate 203. The first region 201 is connected to the first gas source 10, while the input end of the second region 202 is connected to the second gas source 11, and its output end is connected to the process chamber 50. The first balancing valve plate 203 is sealed and slidably connected to the inner wall of the first filling tank 20. The first gas source 10 is used to supply the first gas to the first region 201 while the second region 202 outputs the second gas provided by the second gas source 11 to the process chamber 50 (i.e., during the deposition phase). This drives the first balancing valve plate 203 to slide toward the output end of the second region 202 to maintain a constant gas pressure in the second region 202.

[0054] Here, when a pressure difference exists between the first area 201 and the second area 202 on either side of the balancing valve disc, the balancing valve disc will slide within the filling tank until the pressures on both sides reach equilibrium, thereby equalizing the pressures in the first area 201 and the second area 202. Thus, by adjusting the pressure of the first gas supplied by the first gas source 10 to the first area 201, the pressure in the second area 202 can be adjusted, maintaining the gas pressure in the second area 202 constant.

[0055] Specifically, the gas supply system can be equipped with a flow control valve and a pressure sensor on the gas supply pipeline. The flow control valve can be a mass flow controller (MFC) or a mass flow meter (MFM). The flow control valve can accurately adjust the inert gas flow rate based on the pressure data of the second region 202 monitored in real time by the pressure sensor.

[0056] When the reaction source gas is input into the reaction chamber, causing the pressure in the first region 201 to change, the pressure sensor feeds the detected pressure signal back to the control system. The control system adjusts the flow control valve to increase or decrease the amount of inert gas introduced, based on a preset pressure threshold, to create a corresponding pressure difference on both sides of the balancing valve plate. Under the action of this pressure difference, the balancing valve plate slides within the filling tank, redistributing the gas space on both sides until the pressure in the first region 201 and the second region 202 are equal again. Through this dynamic adjustment process, the reaction source gas input into the reaction chamber can maintain a constant high pressure while ensuring that the reaction source gas concentration remains consistent. This effectively avoids changes in gas concentration caused by pressure fluctuations, provides reliable protection for the stable progress of the chemical reaction in the reaction chamber, and significantly improves the controllability and consistency of the reaction process.

[0057] In some embodiments, the first gas source 10 is an inert gas source and is connected to an input end of the second region 202 for providing the first gas to the second region 202 during the purge phase to clean the second region 202 .

[0058] In some embodiments, the gas supply system further includes a second gas source 11. The second gas source 11 is an inert gas source that blows an inert gas into the liquid reaction source 12 during the source replenishment phase to provide an aerosol carrying liquid reactants to the second region 202, and / or provides an inert gas to the second region 202 during the gas replenishment phase to adjust the concentration of the aerosol.

[0059] The gas supply system may also include a second filling tank 30 and a second balancing valve plate 303. The interior of the second filling tank 30 is divided into a third region 301 and a fourth region 302 by the second balancing valve plate 303. The third region 301 is connected to the first gas source 10, while the input end of the fourth region 302 is connected to the second gas source 11, and its output end is connected to the process chamber 50. The second balancing valve plate 303 is sealed and slidably connected to the inner wall of the second filling tank 30. The first gas source 10 supplies the first gas to the third region 301 while the fourth region 302 delivers the second gas to the process chamber 50. This drives the second balancing valve plate 303 to slide toward the output end of the fourth region 302 to maintain a constant gas pressure in the fourth region 302.

[0060] Please refer to Figure 3 , Figure 3 A schematic structural diagram of a sealing ring provided according to some embodiments of the present invention is shown.

[0061] like Figure 3 As shown, the gas supply system further includes: a sealing ring 40 , which is provided between the first balancing valve plate 203 and the inner wall of the first filling tank 20 , and is used to prevent gas leakage between the first area 201 and the second area 202 .

[0062] The air supply system also includes a heating wire and insulation foam. The heating wire is wrapped around the outer surface of the first filling tank 20 to heat the first filling tank 20. The insulation foam is wrapped around the outer surface of the heating wire to ensure uniform heating of the first filling tank 20, thereby preventing particle problems caused by localized condensation.

[0063] The following will describe the working principles of the above-mentioned gas supply system and thin film deposition equipment in conjunction with some embodiments of the control method of thin film deposition equipment. Those skilled in the art will understand that the embodiments of the control method of these thin film deposition equipment are only some non-limiting implementation methods provided by the present invention, and are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all working modes of the gas supply system and thin film deposition equipment. Similarly, the gas supply system and thin film deposition equipment are also only some non-limiting implementation methods provided by the present invention, and do not constitute a limitation on the execution subject or execution order of each step in the control method of these thin film deposition equipment.

[0064] Please refer to Figure 1 and Figures 4 and 5 , Figure 4 A schematic diagram illustrating the principles of a control method for a thin film deposition device provided according to some embodiments of the present invention is shown. Figure 5 A flow chart of a control method for a thin film deposition device according to some embodiments of the present invention is shown.

[0065] like Figure 1 and Figures 4 and 5 As shown, the thin film deposition apparatus may first perform step S1: supplying a second gas to the second region 202 of the first filling tank 20 via the second gas source 11 of the gas supply system. Specifically, the second gas source 11 blows an inert gas into the liquid reaction source 12 via AV2 during a source replenishment phase, and supplies an aerosol carrying a liquid reactant to the second region 202 via AV1, AV4, and AV5. In response to the source replenishment phase reaching a first time T1, the source replenishment is completed.

[0066] Thereafter, the thin film deposition apparatus may first execute step S2: in response to the process of supplying the second gas to the second region 202 reaching a predetermined first time T1, the second gas is output to the process chamber 50 via the output end of the second region 202, and simultaneously the first gas is supplied to the first region 201 of the first filling tank 20 via the first gas source 10, driving the first balancing valve plate 203 to slide toward the output end of the second region 202 to maintain a constant gas pressure in the second region 202. Specifically, the thin film deposition apparatus may execute step S2.1: the first gas from the first gas source 10 is supplied to the first region 201 of the first filling tank 20 via AV7, causing the first filling tank 20 to reach a predetermined pressure, and then execute step S2.2: the second gas from the second region 202 is supplied to the process chamber 50 via AV8 and AV9.

[0067] Therefore, the thin film deposition equipment can maintain the reaction gas input into the reaction chamber at a constant high pressure state while ensuring that the concentration of the reaction source gas remains consistent, thereby effectively avoiding changes in gas concentration caused by pressure fluctuations, thereby improving the stability and consistency of the chemical reaction in the reaction chamber.

[0068] Furthermore, in some embodiments, after outputting the second gas to the process chamber 50 , the thin film deposition apparatus may preferably utilize the cooperation of the first gas source 10 and the vacuum pump 60 to purge the second region 202 to remove residual gas therein.

[0069] Specifically, the thin film deposition apparatus may perform step S3: supplying the first gas to the second region 202 via the first gas source 10, and extracting gas from the second region 202 via the vacuum pump 60 to purge the second region 202. The first gas in the first gas source 10 is passed through AV7, AV6, AV5, AV8, and AV10 to purge the cylinder, and the pressure of the first region 201 is adjusted to zero. The gas is then extracted from the second region 202 via the vacuum pump 60 to clean the second region 202 and prepare for the next supply cycle.

[0070] Those skilled in the art will appreciate that this purge step is optional and is intended to remove residual gas. Therefore, while the second region 202 of the first filling tank 20 is supplying the second gas to the process chamber 50, the second gas source 11 reuses this time to supply the second gas to the fourth region 302 of the second filling tank 30. Alternatively, those skilled in the art may omit this purge step and simply activate the second filling tank 30 to supply gas to the process chamber 50 in response to the second gas supply to the fourth region 302 reaching the first time T1.

[0071] In some embodiments, the thin film deposition apparatus can also reuse the time for supplying the second gas to the fourth region 302 of the second filling tank 30 via the second gas source 11 while the second region 202 of the first filling tank 20 is outputting the second gas to the process chamber 50. In response to the process of supplying the second gas to the fourth region 302 reaching the first time T1 and completing the purge of the second region 202, the second gas is output to the process chamber 50 via the output end of the fourth region 302, while the first gas is supplied to the third region 301 via the first gas source 10, driving the second balancing valve plate 303 to slide toward the output end of the fourth region 302 to maintain the gas pressure in the fourth region 302 constant.

[0072] Thus, the first filling tank 20 and the second filling tank 30 alternately output the second gas to the process chamber 50. The second gas source 11 reuses the time when the first filling tank 20 outputs the second gas to the process chamber 50 to replenish the second filling tank 30, and reuses the time when the second filling tank 30 outputs the second gas to the process chamber 50 to replenish the first filling tank 20. In response to the number of times the second gas is alternately output to the process chamber 50 reaching a preset number, the deposition operation is completed.

[0073] Here, the second filling tank 30 is used to smoothly switch after the first filling tank 20 finishes supplying gas, avoiding waiting time caused by untimely supply, thereby improving the stability and consistency of the chemical reaction in the reaction chamber.

[0074] Optionally, in some embodiments, the second gas source 11 is an inert gas source, which blows inert gas into the liquid reaction source 12 during the source replenishment phase to provide an aerosol carrying the corresponding liquid reactant to the second region 202. Thus, after executing step S1, the thin film deposition apparatus may further execute step S1 ′ In response to the process of providing aerosol to the second region 202 reaching the first time T1, the second gas source 11 first supplies an inert gas to the second region 202 to adjust the concentration of the aerosol, and then outputs the aerosol to the process chamber 50. Specifically, the second gas source 11 replenishes the dilution gas via AV3, AV4, and AV5, and stops replenishing the dilution gas after reaching the second time T2.

[0075] Furthermore, the expression of the reaction source concentration is:

[0076] C=MFC1*T1 / (MFC1*T1+MFC2*T2)

[0077] Wherein, C is the concentration of the reaction source, MFC1 is the mass flow rate of the reaction source, MFC2 is the mass flow rate of the second gas source 11, T1 is the first time for the reaction source to supply gas, and T2 is the second time for the second gas source 11 to supply gas.

[0078] In summary, the gas supply system, thin film deposition equipment, and control method of thin film deposition equipment provided by the present invention can be used to maintain a constant high-pressure state of the reaction gas input into the reaction chamber while ensuring that the concentration of the reaction source gas remains consistent, thereby effectively avoiding changes in gas concentration caused by pressure fluctuations, and improving the stability and consistency of the chemical reaction in the reaction chamber.

[0079] Although the above methods are illustrated and described as a series of acts for simplicity of explanation, it is to be understood and appreciated that these methods are not limited by the order of the acts, as some acts may occur in a different order and / or concurrently with other acts from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art according to one or more embodiments.

[0080] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas supply system, characterized in that: include: A first filling tank, wherein the interior space thereof is divided into a first area and a second area via a first balancing valve plate, wherein the first area is connected to a first gas source, an input end of the second area is connected to a second gas source, and an output end of the second area is connected to the process chamber; The first balancing valve plate is sealed and slidably connected to the inner wall of the first filling tank; and The first gas source is used to provide the first gas to the first area while the second area outputs the second gas provided by the second gas source to the process chamber, driving the first balancing valve to slide toward the output end of the second area to maintain the gas pressure in the second area unchanged.

2. The gas supply system according to claim 1, wherein: The first gas source is an inert gas source and is connected to an input end of the second region, and is used to provide the first gas to the second region during a purge phase to clean the second region.

3. The gas supply system according to claim 1, wherein: The gas supply system further includes a second gas source, wherein the second gas source is an inert gas source, which blows inert gas into the liquid reaction source during the source replenishment phase to provide an aerosol carrying liquid reactants to the second region, and / or The inert gas is provided to the second region during the gas supplementation phase to adjust the concentration of the aerosol.

4. The gas supply system according to claim 1, wherein: Also includes: A sealing ring is provided between the first balancing valve plate and the inner wall of the first filling tank, and is used to prevent gas leakage between the first area and the second area.

5. The gas supply system according to claim 1, wherein: Also includes: a heating wire, wound around an outer surface of the first filling tank, for heating the first filling tank; and The heat-insulating cotton is wrapped around the outside of the heating wire and is used to heat the first filling tank evenly.

6. The gas supply system according to claim 1, wherein: Also includes: a second filling tank, the interior of which is divided into a third area and a fourth area via a second balancing valve, wherein the third area is connected to the first gas source, an input end of the fourth area is connected to the second gas source, and an output end thereof is connected to the process chamber; and The second balancing valve is sealed and slidably connected to the inner wall of the second filling tank, wherein the first gas source also supplies the first gas to the third area while outputting the second gas to the process chamber from the fourth area, driving the second balancing valve to slide toward the output end of the fourth area to maintain the gas pressure in the fourth area unchanged. The first filling tank and the second filling tank alternately output the second gas to the process chamber, and the second gas source reuses the time when the first filling tank outputs the second gas to the process chamber to replenish the second filling tank, and reuses the time when the second filling tank outputs the second gas to the process chamber to replenish the first filling tank.

7. A thin film deposition device, characterized in that: include: The gas supply system according to any one of claims 1 to 6; as well as The process chamber is connected to the output end of the second area of the first filling tank.

8. The thin film deposition apparatus according to claim 7, wherein: Also includes: A vacuum pump is connected to at least an output end of the second region of the first filling tank to extract residual gas in the second region.

9. A method for controlling a thin film deposition device, characterized in that: The following steps are involved: providing a second gas to a second region of the first filling tank thereof via a second gas source of the gas supply system according to any one of claims 1 to 6; as well as In response to the process of providing the second gas to the second area reaching a preset first time, the second gas is output to the process chamber via the output end of the second area, and at the same time, the first gas is provided to the first area of the first filling tank via the first gas source, and the first balancing valve is driven to slide toward the output end of the second area to maintain the gas pressure in the second area unchanged.

10. The control method of the thin film deposition equipment according to claim 9, wherein: After outputting the second gas to the process chamber, the control method further includes the following steps: The first gas is provided to the second region via the first gas source, and gas is evacuated from the second region via a vacuum pump to purge the second region.

11. The control method of the thin film deposition equipment according to claim 10, wherein: The following steps are also included: While the second area of the first filling tank outputs the second gas to the process chamber, the second gas is supplied to the fourth area of the second filling tank via the second gas source during the reuse of the time; as well as In response to the process of supplying the second gas to the fourth region reaching the first time and completing the purge of the second region, the second gas is output to the process chamber via the output end of the fourth region, and at the same time, the first gas is supplied to the third region via the first gas source, and the second balancing valve is driven to slide toward the output end of the fourth region to maintain the gas pressure in the fourth region unchanged.

12. The control method of the thin film deposition equipment according to claim 9, wherein: The second gas source is an inert gas source, which blows inert gas into the liquid reaction source during the source replenishment phase to provide an aerosol carrying the corresponding liquid reactant to the second region. The control method further includes the following steps: In response to the process of providing the aerosol to the second region reaching the first time, the inert gas is first provided to the second region via the second gas source to adjust the concentration of the aerosol, and then the aerosol is output to the process chamber.

13. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the control method for the thin film deposition apparatus according to any one of claims 9 to 12 is implemented.

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