Perovskite solar cell antireflection film, perovskite solar cell and perovskite solar module

Abstract

The invention relates to the technical field of new energy battery preparation, in particular to a perovskite solar cell antireflection film, a perovskite solar cell and a perovskite solar module. The perovskite solar cell antireflection film comprises an amorphous SiO2 film layer and at least one group of high-low-high refractive index composite films. Compared with the prior art, the invention has the following technical effects: the invention provides the antireflection film with more than two layers, the first layer close to the transparent substrate is the amorphous SiO2 film layer, and compared with the traditional crystal SiO2, the amorphous SiO2 atoms are disorderly arranged and have no crystal boundary, dislocation and birefringence; in addition, impurities and defects are fewer, the optical uniformity is better, and the transmittance is higher. The rest of the film layers are close to the SiO2 side, and at least one part of the film layers are arranged according to the order of refractive indexes from high to low to form the optimal design of the multi-layer structure antireflection film, so that the average reflectivity of the whole spectrum is reduced, the light utilization rate of the solar cell is improved, and the photoelectric conversion efficiency of the solar cell is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of new energy battery preparation, and in particular to a perovskite solar cell anti-reflection film, a perovskite solar cell and a perovskite solar cell module. Background Art

[0002] In recent years, perovskite materials have emerged as a leader in photovoltaics thanks to their tunable band gap, low exciton binding energy, high carrier mobility, and long carrier diffusion length. These properties contribute to their strong light absorption capacity and broad spectral absorption range, encompassing the entire visible spectrum. Furthermore, perovskite materials can be prepared cost-effectively through solution methods under mild conditions. These advantages have enabled perovskite cells to increase photovoltaic power generation efficiency from 3% to over 29.1% in just over a decade, demonstrating enormous potential for development.

[0003] In the photoelectric conversion process of perovskite cells, reducing light loss is crucial to improving cell efficiency. When sunlight strikes the cell's surface, some light is reflected and scattered, preventing it from entering the cell and being absorbed and converted into electrical energy. Anti-reflection coatings effectively reduce the reflection and scattering of incident sunlight on the cell's top surface, increasing light transmittance and allowing more light to reach the perovskite light-absorbing layer, thereby "activating" more photogenerated carriers and providing more power for energy conversion.

[0004] Furthermore, solar cells typically require glass encapsulation for protection. However, transparent glass reflects incident sunlight, resulting in a reflection loss of approximately 8%, significantly reducing the solar cell's light utilization efficiency. To address this issue, anti-reflection coatings are often used to reduce light reflection on the solar cell surface, thereby improving the solar cell's photoelectric conversion efficiency. Common anti-reflection coatings include single layers of MgF2 or SiO2. While a single layer of anti-reflection coating effectively reduces the reflectance of a specific wavelength of light, the average reflectance across the entire spectrum remains high.

[0005] Chinese patent application CN201410007684.8 discloses a weather-resistant anti-reflection coating for solar glass. This coating is a W-shaped, double-layer optical film system with a wavelength of λ / 2-λ / 4, formed from a densely structured high-refractive-index film layer and a low-refractive-index film layer. The first layer is a high-refractive-index film layer with a refractive index of 1.7-2.1, and the second layer is a low-refractive-index film layer with a refractive index of 1.35-1.43. The average transmittance of the coated substrate glass in the 400-800nm band is greater than 6%, and the film hardness is greater than 5H. However, this invention's anti-reflection coating has the following drawbacks: the refractive index exceeds 1% in some bands, and the transmittance is less than 95%.

[0006] Therefore, there is a need to develop anti-reflection films with lower reflectivity and higher transmittance. Summary of the Invention

[0007] The purpose of the present invention is to overcome the deficiencies of the prior art and provide a perovskite solar cell anti-reflection film, a perovskite solar cell and a perovskite solar cell module.

[0008] The technical solutions to the technical problems of the present invention are as follows:

[0009] In a first aspect of the present invention, a perovskite solar cell anti-reflection film is provided, comprising an amorphous SiO2 film layer and at least one set of high-low-high refractive index composite films, wherein each set of high-low-high refractive index composite films is arranged in the order of a second high refractive index material layer, a low refractive index material layer, and a first high refractive index material layer, starting from a side close to the amorphous SiO2 film layer;

[0010] The second high refractive index material layer has a thickness of 48 nm to 83 nm, a refractive index of 1.70 to 2.40, and is selected from any one or more pure thin films of TiO2, HfO2, ZrO2, Ta2O5, Nb2O5, or Y2O3, or a thin film of an oxide doped with other metal ions in the aforementioned pure thin film;

[0011] The thickness of the low refractive index material layer is 68nm to 84nm, the refractive index of the material is 1.35-1.50, and the material is selected from any one or more thin films of Na3AlF6, MgF2, and SiO2;

[0012] The thickness of the first high refractive index material layer is 142nm~157nm, the refractive index of the material is 1.70-2.40, and the material is selected from any one or more pure films of TiO2, HfO2, ZrO2, Ta2O5, Nb2O5 or Y2O3, or selected from films of oxides doped with other metal ions in the aforementioned pure films.

[0013] Preferably, the thickness of the amorphous SiO2 film layer is 78 nm to 85 nm, the material refractive index is 1.44-1.47, and the transmittance of the amorphous SiO2 film layer is greater than 85%.

[0014] In one embodiment of the present invention, the perovskite solar cell anti-reflection film comprises a first high refractive index material layer, a low refractive index material layer, a second high refractive index material layer, an amorphous SiO2 film layer, and a transparent substrate; the first layer close to the transparent substrate is an amorphous SiO2 film layer, and starting from the side close to the amorphous SiO2 film layer, the second high refractive index material layer, the low refractive index material layer, and the first high refractive index material layer are sequentially arranged;

[0015] The thickness of the amorphous SiO2 film layer is 80nm;

[0016] The thickness of the second high refractive index material layer is 50 nm, and the material is Ta2O;

[0017] The thickness of the low refractive index material layer is 70 nm, and the material is MgF2;

[0018] The thickness of the first high refractive index material layer is 150 nm, and the material is Ta2O5.

[0019] Preferably, the amorphous SiO2 film layer is made by magnetron sputtering: the cleaned transparent substrate is placed in a magnetron sputtering process chamber and the vacuum degree is drawn to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 2:1, pure silicon target is used, and the sputtering power is 2.0kW.

[0020] Preferably, the second high refractive index material layer is made by magnetron sputtering: the substrate on which the SiO2 film layer has been produced is placed in a magnetron sputtering process chamber, and the vacuum degree is drawn to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 4:1, thallium oxide target is used, and the sputtering power is 2.0kW.

[0021] Preferably, the low refractive index material layer is made by magnetron sputtering: the substrate on which the second high refractive index material layer has been produced is placed in a magnetron sputtering process chamber, and the vacuum degree is drawn to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 3:1, magnesium fluoride target is used, and the sputtering power is 2.0kW.

[0022] Preferably, the first high refractive index material layer is made by magnetron sputtering: the substrate on which the low refractive index material layer has been produced is placed in a magnetron sputtering process chamber, and the vacuum degree is drawn to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 4:1, thallium oxide target is used, and the sputtering power is 2.0kW.

[0023] In a second aspect of the present invention, a perovskite solar cell comprising the perovskite solar cell anti-reflection film according to the first aspect is provided.

[0024] The perovskite solar cell of the present invention comprises an anti-reflection film, a first substrate, a cell layer and a second substrate in sequence. At least one of the first substrate and the second substrate can be light-transmissive, or both layers can be light-transmissive.

[0025] The material of the light-transmitting substrate can be a rigid material such as glass, or a flexible material such as polyethylene terephthalate (PET), polyimide (PI), polydimethylsiloxane (PDMS), thermoplastic polyurethane (TPU), polyvinyl alcohol (PVA) or polymethyl methacrylate (PMMA).

[0026] The battery layer includes an electrode layer and an absorption layer, and the electrode layer includes an anode and a cathode. The anode is an FTO layer, specifically ITO, IZO, AZO, etc. The cathode is a metal electrode selected from Al, Cu, and Ag. To protect the absorption layer, a low-damage ITO, IWO, IZO, or other thin film is placed in front of the metal electrode layer for protection. To protect the metal electrode from air oxidation, an ITO, IWO, IZO, or other thin film is also placed on the other side of the metal electrode for protection. The perovskite absorption layer is a perovskite absorption layer coated with an ilmenite film and crystallized by annealing.

[0027] To facilitate charge transfer, a hole transport layer is provided between the anode layer and the absorption layer. The hole transport layer can be an inorganic or organic film. The inorganic film can be nickel oxide or a nickel oxide film doped with metals such as magnesium, lithium, and copper. The organic film can be various organic self-assembled films, such as (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz), (2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)phosphonic acid (MeO-2PACz), (4-(3,6-dimethyl-9H-carbazol-9-yl)butyl)phosphonic acid (Me-4PACz), etc. It can also be a self-assembling molecular material containing a carbonate group, such as (2-(9H-carbazol-9-yl)ethyl)carbonic acid, (2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)carbonic acid, (4-(3,6-dimethyl-9H-carbazol-9-yl)butyl)carbonic acid, etc.

[0028] An electron transport layer is provided between the absorption layer and the cathode. The material of the electron transport layer is selected from C60, PCBM, SnO2, etc. Furthermore, to reduce defects in the perovskite film, a passivation layer is provided between the electron transport layer and the absorption layer. The passivation layer material is selected from sodium 4-chlorobenzenesulfonate (4Cl-BZS), a hindered Lewis acid-base pair (FLP), etc.

[0029] In a third aspect of the present invention, a perovskite cell assembly is provided, which is provided with the perovskite solar cell according to the second aspect. The assembly can be a single-junction perovskite assembly or a stacked perovskite assembly.

[0030] Furthermore, the stacked perovskite component can be a stacked component of crystalline silicon and perovskite, a stacked component of cadmium telluride, copper indium gallium selenide and perovskite, or a stacked component of perovskite and perovskite. The stacked component of crystalline silicon and perovskite can be a two-terminal stacked component or a four-terminal stacked component.

[0031] The present invention has the following technical effects:

[0032] The present invention provides an anti-reflection film with two or more layers. The first layer, located near the transparent substrate, is an amorphous SiO2 film. Compared to traditional crystalline SiO2, amorphous SiO2 atoms are disordered and lack grain boundaries, dislocations, or birefringence. Furthermore, it has fewer impurities and defects, resulting in better optical uniformity and higher transmittance. The remaining layers, located near the SiO2, have at least a portion arranged with a refractive index in a sequence of high, low, and high, forming an optimal multi-layer anti-reflection film design. This reduces the average reflectivity across the entire spectrum, improves the utilization of light by solar cells, and ultimately increases the photovoltaic conversion efficiency of solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 Schematic diagram of the structure of the anti-reflection film for perovskite solar cells in Example 1.

[0034] Figure 2 This is the reflectivity curve of the anti-reflection film for the perovskite solar cell of Example 1.

[0035] Figure 3 1 is the transmittance curve of the anti-reflection film for the perovskite solar cell of Example 1.

[0036] Figure 4 1 is a reflectivity curve of the anti-reflection film of Example 1 and MgF2 anti-reflection films of different thicknesses in Example 2.

[0037] Figure 5 1 is the transmittance curve of the anti-reflection film of Example 1 and MgF2 anti-reflection films of different thicknesses in Example 2.

[0038] Figure 6 Schematic diagram of the structure of the perovskite solar cell of Example 3.

[0039] Figure 7 It is a schematic diagram of the specific structure of the perovskite solar cell of Example 3.

[0040] Figure 1 In the figure, 11 is a first high refractive index material layer, 12 is a low refractive index material layer, 13 is a second high refractive index material layer, 14 is an amorphous SiO2 film layer, and 2 is a transparent substrate.

[0041] Figure 6In the figure, 1 is the anti-reflection film, 2 is the first substrate, 3 is the battery layer, and 4 is the second substrate. DETAILED DESCRIPTION

[0042] In order to make the objectives, technical solutions and advantages of the present invention more clear, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0043] Example 1

[0044] The anti-reflection film for perovskite solar cells in this embodiment has a structure as follows: Figure 1 As shown, it is an anti-reflection film with more than two layers, including a first high refractive index material layer 11, a low refractive index material layer 12, a second high refractive index material layer 13, an amorphous SiO2 film layer 14 and a transparent substrate 2;

[0045] The first layer close to the transparent substrate 2 is an amorphous SiO2 film layer 14, and the remaining film layer materials are on the side close to the amorphous SiO2 film layer 14. The remaining film layer materials are arranged in the order of the second high refractive index material layer 13, the low refractive index material layer 12 and the first high refractive index material layer 11, starting from the side close to the amorphous SiO2 film layer 14.

[0046] The amorphous SiO2 film layer is made of pure silicon target material with a refractive index of 1.47;

[0047] The first high refractive index material layer is made of Ta2O5 and has a refractive index of 2.1;

[0048] The low refractive index material layer is made of MgF2 and has a refractive index of 1.39;

[0049] The second high refractive index material layer is made of Ta2O5 and has a refractive index of 2.18.

[0050] The method for preparing the anti-reflection film for a perovskite solar cell in this embodiment includes the following steps:

[0051] (1) Using glass as the transparent substrate 2, it is sequentially cleaned by ultrasonic, spray, air knife, static removal, and plasma cleaning processes;

[0052] (2) Preparation of amorphous SiO2 film 14: Place the cleaned transparent substrate into the magnetron sputtering process chamber and pump the vacuum degree to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 2:1, using pure silicon target, sputtering power is 2.0kW, thickness is about 80nm;

[0053] (3) Preparation of the second high refractive index material layer 13: Taking Ta2O5 as an example, the substrate on which the SiO2 film layer has been produced is placed in the magnetron sputtering process chamber. The vacuum degree is drawn to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 4:1. Thallium oxide target is used, the sputtering power is 2.0kW, and the thickness is about 50nm;

[0054] (4) Preparation of low refractive index material layer 12: Taking MgF2 film as an example, the substrate on which the second high refractive index material layer has been produced is placed in the magnetron sputtering process chamber. The vacuum degree is drawn to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 3:1. A magnesium fluoride target is used, the sputtering power is 2.0kW, and the thickness is about 70nm;

[0055] (5) Preparation of the first high refractive index material layer 11: Taking Ta2O5 as an example, the substrate on which the low refractive index material layer has been produced is placed in the magnetron sputtering process chamber. The vacuum degree is drawn to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 4:1, using thallium oxide target, sputtering power is 2.0kW, thickness is about 150nm;

[0056] (6) After coating, the multilayer anti-reflection film is removed from the cavity.

[0057] The reflectivity and transmittance tests were completed at Southeast University using a spectrophotometer equipped with an integrating sphere accessory.

[0058] The reflectivity measurement method is as follows:

[0059] ①The sample surface should be clean and free of scratches to avoid contamination affecting the optical signal.

[0060] ② Use air as a reference (reflectivity set to 0%) and a standard white plate (reflectivity close to 100%) to calibrate the diffuse reflection channel.

[0061] ③ Place the incident surface of the battery device upward (such as the glass substrate side) on the sample port of the integrating sphere.

[0062] ④ The instrument emits monochromatic light (usually in the wavelength range of 200–1100 nm), and the integrating sphere collects the specular and diffuse reflected light from the sample surface to calculate the total reflectance R(λ).

[0063] ⑤ Data processing: Subtract the reflection signal of the blank substrate to obtain the net reflectivity of the sample, analyze the reflection peak position (such as the reflection peak of the glass substrate is at ~300nm and ~800nm), and evaluate the suppression effect of the anti-reflection film on specific wavelengths.

[0064] The transmittance measurement method is as follows:

[0065] ①The sample surface should be clean and free of scratches to avoid contamination affecting the optical signal.

[0066] ②Use air as a reference (reflectivity is set to 0%) and use a light shield to calibrate the transmittance to 0%.

[0067] ③ Place the battery device at the sample port of the integrating sphere, ensuring that light is incident from the glass substrate side, passes through the device and enters the integrating sphere. The instrument measures the intensity of the transmitted light and calculates the transmittance T(λ).

[0068] ④ Subtract the transmittance signal of the blank substrate to obtain the net transmittance of the perovskite layer and the functional layer. Combined with the reflectivity data, the light absorption rate A(λ)=1-R(λ)-T(λ) is calculated to evaluate the sample's absorption capacity for light of different wavelengths.

[0069] like Figure 2 , which is the reflection curve of the anti-reflection film of the perovskite solar cell of this embodiment.

[0070] The AR curve represents the reflectivity of the improved anti-reflection coating. In the visible light region of 400-700nm, the reflectivity is mostly low, approaching 0%, indicating that it effectively reduces reflection in the visible light band, allowing more light to enter the cell for absorption and utilization. In the near-infrared region of 700-800nm, the reflectivity rises rapidly. The Glass curve represents the reflectivity of ordinary glass. The reflectivity is relatively stable across the entire band, ranging between 4% and 5%. The reflectivity curve shows that the improved anti-reflection coating significantly reduces reflectivity in the critical visible light band, facilitating the absorption and utilization of light by the perovskite cell and playing a positive role in improving cell performance.

[0071] like Figure 3 , which is the transmission curve of the anti-reflection film for the perovskite solar cell of this embodiment.

[0072] The AR curve represents the transmittance of the improved anti-reflection coating (AR). In the 400-800nm band, the transmittance mostly remains close to 100%, with only a slight downward trend at the ends of the band. The AR curve shows a transmittance close to 100% in most of the band, meaning that the vast majority of light can successfully pass through the anti-reflection coating and enter the battery. Throughout the entire 400-800nm band examined, the AR anti-reflection coating maintains high transmittance, especially in the visible light band (400-700nm), which is the wavelength range that perovskite materials primarily absorb and utilize, and has positive implications for improving battery performance. Although there is a slight decrease in transmittance in the near-infrared band (700-800nm), as mentioned above, perovskite's contribution to near-infrared light absorption is limited, and this slight change has little impact. The Glass curve represents the transmittance of ordinary glass. In the 400-800nm band, the overall transmittance is slightly lower than the AR curve, stabilizing at just above 90%-95%. The improved anti-reflection (AR) film has better transmittance than ordinary glass, allowing more light to enter the perovskite cell, which is beneficial to improving the cell's photoelectric conversion performance and is a more ideal result.

[0073] Example 2

[0074] The commonly used anti-reflection film is generally MgF2. In this embodiment, the transmittance of several anti-reflection films with different structures is mainly compared.

[0075] Sample 1 is the anti-reflection film in Example 1.

[0076] Sample 2 is an 83nm MgF2 anti-reflection film.

[0077] Sample 3 is a 90nm MgF2 anti-reflection film.

[0078] Sample 4 is a 95nm MgF2 anti-reflection film.

[0079] Sample 5 is a 100nm MgF2 anti-reflection film.

[0080] The anti-reflection film of MgF2 of sample 2-5 was prepared by thermal evaporation. -3 –10 -4 Pa, slowly increase the temperature of the evaporation source (high-purity MgF2 granules, 99.99% or higher) until a small amount of material evaporates (slight smoke is observed). Maintain this temperature for 10–20 seconds, then stop heating and wait for the vacuum to be restored. Set the target thickness (83nm, 90nm, 95nm, 100nm) and increase the power at a steady rate until the MgF2 continues to evaporate, while observing the real-time data from the thickness monitor. Once the target thickness is reached, immediately turn off the heating power and stop evaporation.

[0081] According to the reflectivity test results of samples with different thicknesses, Figure 4 The reflectivity test method is the same as that in Example 1.

[0082] Table 1

[0083] Sample Group Anti-reflection coating Reflectivity Transmittance Sample 1 Example 1 0.5% or less Close to 100% Sample 2 <![CDATA[MgF2 83 nm thickness]]> More than 1% Below 95% Sample 3 <![CDATA[MgF2 with a thickness of 90 nm]]> More than 1% Below 95% Sample 4 <![CDATA[MgF2 with a thickness of 95 nm]]> More than 1% Below 95% Sample 5 <![CDATA[MgF2 with a thickness of 100 nm]]> More than 1% Below 95% .

[0084] Figure 4 The black dashed line in the figure is the anti-reflection film in Example 1 of the present invention, and its reflectivity is below 0.5% in the visible wavelength band. The other colored curves are the reflectivities of MgF2 anti-reflection films of different thicknesses, and their reflectivities are all above 1%.

[0085] The transmittance test method is the same as that in Example 1. Figure 5 As shown in Table 1, the black curve represents the transmittance of the anti-reflection coating 1 in Example 1 of the present invention, while the red curve represents the reflectance of the MgF2 anti-reflection coating. The emissivity of the MgF2 anti-reflection coatings of varying thicknesses is not significantly different, and the curves overlap. In the visible light range, the black curve has a higher transmittance than the red curve.

[0086] Example 3

[0087] The perovskite solar cell of this embodiment has a structure as follows Figure 6 and Figure 7 As shown, it includes, in sequence, an anti-reflection film 1, a first substrate 2, a battery layer 3, and a second substrate 4. One of the first substrate 2 and the second substrate 4 is light-transmissive. The first substrate is light-transmissive, and the second substrate is light-impermeable.

[0088] from Figure 7 As can be seen, the battery layer 3 includes an electrode layer and a perovskite absorption layer. The electrode layer includes an anode and a cathode. A hole transport layer is provided between the anode layer and the cathode layer. A first electron transport layer and a second electron transport layer are provided between the absorption layer and the cathode. The perovskite absorption layer is located between the hole transport layer and the first electron transport layer.

[0089] The material description of each layer is as follows:

[0090] Anti-reflection film 1: the anti-reflection film prepared in Example 1;

[0091] The first substrate 2 is an FTO substrate, including a transparent glass substrate + an FTO film layer, and the FTO serves as the anode.

[0092] Battery layer 3: The anode material is FTO, the cathode material is Cu, the absorption layer material is perovskite, and the hole transport layer material is NiOx, where x is usually between 1 and 2. The first electron transport layer material is C60, and the second electron transport layer material is SnO2.

[0093] The second substrate 4 is made of glass. The second substrate is close to the Cu cathode layer, and Cu is opaque to light.

[0094] The preparation method of the perovskite solar cell of this embodiment is as follows:

[0095] The FTO substrate comprises a glass substrate + an FTO film layer, has a square resistance of 15Ω, and a thickness of 3.2 mm.

[0096] The NiOx thin film, a hole transport layer, was deposited using magnetron sputtering equipment, achieving a thickness of 5 nm. It is worth noting that 3 sccm of oxygen was introduced into the NiOx film during its preparation, optimizing the oxygen vacancies on the NiOx film surface and ensuring a better interface with the perovskite absorber layer. The NiOx target was 5% Cu-doped, and the cathode used was RF.

[0097] The perovskite absorber layer is prepared by a one-step wet process. First, the perovskite precursor solution is evenly coated on the NiOx-coated substrate using a slit coating device. Then the solvent is quickly removed using a vacuum drying device. The perovskite is then crystallized using an annealing hot plate, forming a perovskite absorber film with a uniformity of less than 5%.

[0098] Furthermore, a first electron transport layer, a C60 thin film, was deposited on the perovskite absorber layer using an evaporation device with a thickness of 25nm and a uniformity of less than 5%. Furthermore, a second electron transport layer, a SnO2 thin film, was deposited on the C60 film using an ALD device with a thickness of 15nm and a uniformity of less than 5%.

[0099] Then, a magnetron sputtering device is used to deposit a metal electrode layer, a 150 nm Cu film is used as a cathode for conduction, and the Cu target material is a rotating target.

[0100] The second substrate is glass, and is laminated on the Cu electrode using POE and butyl adhesive.

[0101] All of the above materials come from Yangzhou Dehu Intelligent Equipment Co., Ltd., the vacuum coating equipment used comes from Tellurium Semiconductor (Taizhou) Co., Ltd., and other equipment comes from Yangzhou Dehu.

[0102] On the other side of the transparent glass substrate (opposite the FTO film layer) in the FTO, an anti-reflection film was produced using the method described in Example 1. First, amorphous SiO2 was deposited on the transparent substrate using a magnetron sputtering process. Then, the high, low, and high refractive index film layers described in Example 1 were sequentially deposited on top of the amorphous SiO2. This resulted in a perovskite solar cell with an anti-reflection film structure.

[0103] In this example, a total of 4 groups of samples were prepared.

[0104] The photoelectric conversion efficiency of the samples was tested using a steady-state solar cell module simulator, which is used for IV testing of perovskite modules.

[0105] ① Select reverse scan (from Voc to Jsc, i.e. voltage from positive to negative): In this direction, since perovskite cells often have hysteresis effect (difference in forward / reverse scan curves), the reverse scan result is closer to the actual efficiency;

[0106] ② Allow the voltage at each point to stabilize for at least 20ms (to avoid transient response errors) and record the corresponding current value.

[0107] Jsc: The maximum current in the curve (current density at short circuit).

[0108] Voc: The voltage when the current is 0 (open circuit voltage).

[0109] FF: The ratio of the maximum output power point (Vmpp×Jmpp) to Voc×Jsc,

[0110] The formula is: FF = (Vmpp × Jmpp) / (Voc × Jsc)

[0111] Calculated by the formula Eff} = (Jsc × Voc × FF) / Pin × 100, where Pin = 100 mW / cm 2

[0112] The test results are shown in Table 2.

[0113] Table 2

[0114]

[0115]

[0116] From the table above we can see that:

[0117] Sample 1, using the anti-reflection film from Example 1, exhibited a significant improvement in perovskite cell efficiency with the anti-reflection film compared to the case without it, under an oxygen flow rate of 60%. Sample 2 replicated the conditions of Sample 1, and the results confirmed that the perovskite cell with the anti-reflection film did indeed improve efficiency.

[0118] For samples 3 and 4, when the oxygen flow rate increases from 60 to 80, the efficiency of the perovskite cell with anti-reflection film is significantly improved compared with the perovskite cell without anti-reflection film.

[0119] In summary, the efficiency of the perovskite cell with an anti-reflection film structure is significantly improved compared to the perovskite cell without an anti-reflection film.

[0120] Because anti-reflection coatings effectively reduce the reflection and scattering of incident sunlight on the cell's surface, without an anti-reflection coating, some sunlight would be lost due to reflection when striking the cell's surface, preventing it from entering the cell for absorption and utilization. Anti-reflection coatings, through their unique optical properties and structure, cause light to reflect and refract multiple times between the film and the cell's surface, increasing the chances of light entering the cell. This allows more light to reach the perovskite light-absorbing layer, providing the foundation for the generation of more photogenerated carriers.

[0121] Because more light can enter the cell and be absorbed by the perovskite light-absorbing layer, it "activates" more photogenerated carriers. Perovskite materials have a strong light absorption capacity, but this requires sufficient light to reach the light-absorbing layer. Anti-reflection coatings reduce light loss at the surface, indirectly increasing the perovskite's light absorption, thereby improving the cell's photoelectric conversion efficiency.

[0122] The above are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent transformations made using the contents of the present invention specification, or any direct or indirect application in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A perovskite solar cell anti-reflection film, characterized in that: The invention comprises an amorphous SiO2 film layer and at least one set of high-low-high refractive index composite films, wherein each set of high-low-high refractive index composite films is arranged in the order of a second high refractive index material layer, a low refractive index material layer, and a first high refractive index material layer, starting from the side close to the amorphous SiO2 film layer; The second high refractive index material layer has a thickness of 48 nm to 83 nm, a refractive index of 1.70 to 2.40, and is selected from any one or more pure thin films of TiO2, HfO2, ZrO2, Ta2O5, Nb2O5, or Y2O3, or a thin film of an oxide doped with other metal ions in the aforementioned pure thin film; The thickness of the low refractive index material layer is 68nm to 84nm, the refractive index of the material is 1.35-1.50, and the material is selected from any one or more thin films of Na3AlF6, MgF2, and SiO2; The thickness of the first high refractive index material layer is 142nm~157nm, the refractive index of the material is 1.70-2.40, and the material is selected from any one or more pure films of TiO2, HfO2, ZrO2, Ta2O5, Nb2O5 or Y2O3, or selected from films of oxides doped with other metal ions in the aforementioned pure films.

2. The perovskite solar cell anti-reflection film according to claim 1, characterized in that The thickness of the amorphous SiO2 film layer is 78nm-85nm, the material refractive index is 1.44-1.47, and the transmittance of the amorphous SiO2 film layer is greater than 85%.

3. The anti-reflection film for perovskite solar cells according to claim 1, characterized in that: The perovskite solar cell anti-reflection film comprises a first high refractive index material layer, a low refractive index material layer, a second high refractive index material layer, an amorphous SiO2 film layer, and a transparent substrate; the first layer close to the transparent substrate is an amorphous SiO2 film layer, and starting from the side close to the amorphous SiO2 film layer, the second high refractive index material layer, the low refractive index material layer, and the first high refractive index material layer are arranged in this order; The thickness of the amorphous SiO2 film layer is 80nm; The thickness of the second high refractive index material layer is 50 nm, and the material is Ta2O; The thickness of the low refractive index material layer is 70 nm, and the material is MgF2; The thickness of the first high refractive index material layer is 150 nm, and the material is Ta2O5.

4. The perovskite solar cell anti-reflection film according to claim 3, characterized in that The amorphous SiO2 film is made by magnetron sputtering: the cleaned transparent substrate is placed in a magnetron sputtering process chamber and the vacuum degree is drawn to 1*10 - 4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 2:1, pure silicon target is used, and the sputtering power is 2.0kW.

5. The anti-reflection film for perovskite solar cells according to claim 3, characterized in that: The second high refractive index material layer is made by magnetron sputtering: the substrate on which the SiO2 film layer has been produced is placed in a magnetron sputtering process chamber, and the vacuum degree is drawn to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 4:1, thallium oxide target is used, and the sputtering power is 2.0kW.

6. The anti-reflection film for perovskite solar cells according to claim 3, characterized in that: The low refractive index material layer is made by magnetron sputtering: the substrate on which the second high refractive index material layer has been produced is placed in a magnetron sputtering process chamber, and the vacuum degree is drawn to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 3:1, magnesium fluoride target is used, and the sputtering power is 2.0kW.

7. The anti-reflection film for perovskite solar cells according to claim 3, characterized in that: The first high refractive index material layer is made by magnetron sputtering: the substrate on which the low refractive index material layer has been produced is placed in a magnetron sputtering process chamber, and the vacuum degree is drawn to 1*10 -4 Pa, with 99.999% purity Ar and O2 as sputtering gas and reaction gas, the ratio is 4:1, thallium oxide target is used, and the sputtering power is 2.0kW.

8. A perovskite solar cell comprising the perovskite solar cell anti-reflection film according to any one of claims 1 to 7.

9. The perovskite solar cell according to claim 8, characterized in that It includes an anti-reflection film, a first substrate, a battery layer and a second substrate in sequence, at least one of the first substrate and the second substrate is light-transmissive; the battery layer includes an electrode layer and an absorption layer, the electrode layer includes an anode and a cathode, a hole transport layer is provided between the anode layer and the absorption layer, and an electron transport layer is provided between the absorption layer and the cathode.

10. A perovskite cell assembly provided with the perovskite solar cell according to claim 8.

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