Perovskite laminated solar cell and preparation method and application thereof

Abstract

The invention belongs to the field of solar cells, and particularly relates to a perovskite laminated solar cell and a preparation method thereof. The perovskite laminated solar cell sequentially comprises a bottom electrode, a first cell module, a second cell module, a transparent conductive layer, a first grid line electrode and a second grid line electrode, the first battery assembly is selected from one or more of a crystalline silicon battery, a perovskite battery and a copper indium gallium selenium battery, and the second battery assembly is a perovskite battery. According to the perovskite laminated solar cell, the composite grid line structure is adopted, the contact resistance loss between the transparent conducting layer and the grid lines and the loss of bulk resistance transmitted from the fine grid to the main grid can be reduced, and therefore the filling coefficient of a device is increased, and the efficiency of the cell is improved.

Description

Technical Field

[0001] The present invention belongs to the field of solar cells, and in particular relates to a perovskite stacked solar cell, a preparation method thereof, and applications thereof. Background Art

[0002] Crystalline silicon perovskite tandem solar cells have the potential to further improve the energy conversion efficiency of existing solar cells. In conventional crystalline silicon perovskite tandem solar cells, high temperatures severely damage the perovskite layer, so the curing temperature of the paste is strictly controlled during curing. Therefore, ultra-low-temperature silver paste is currently the optimal choice for metallization of crystalline silicon perovskite tandem solar cells using screen printing. However, at low curing temperatures, the printed metal grid lines cannot simultaneously achieve low contact resistance and low line resistance. At low curing temperatures, existing ultra-low-temperature silver pastes can achieve low contact resistance with the transparent conductive oxide (TCO) layer, but their bulk resistivity is relatively high. Meanwhile, some ultra-low-temperature silver pastes have low bulk resistivity but excessive contact resistance with the TCO layer. Currently, the ultra-low-temperature paste products produced by various paste manufacturers are still immature, and no ultra-low-temperature silver paste achieves both low contact resistance with the TCO layer and low bulk resistivity. Summary of the Invention

[0003] In response to the above-mentioned problems existing in the prior art, the present invention proposes a perovskite tandem solar cell, a preparation method and an application thereof, which can be directly printed on the TCO layer, has low contact resistance with the TCO layer, and also has low bulk resistivity.

[0004] Specifically, one aspect of the present invention provides a perovskite tandem solar cell, which comprises, in sequence, a bottom electrode, a first cell assembly, a second cell assembly, a transparent conductive layer, a first grid electrode, and a second grid electrode, wherein the second grid electrode is overlapped and arranged on the first grid electrode; the first cell assembly is one or more selected from a crystalline silicon cell, a perovskite cell, and a copper indium gallium selenide cell, and the second cell assembly is a perovskite cell; the contact resistivity between the first grid electrode and the transparent conductive layer is ≤10mΩ*cm 2 The volume resistivity of the second gate line electrode is ≤10 -5 Ω*cm.

[0005] In one or more embodiments, the first cell component is a crystalline silicon cell.

[0006] In one or more embodiments, the first gate line electrode has a height of 1-20 μm and a width of 1-100 μm; the second gate line electrode has a height of 1-20 μm and a width of 1-100 μm.

[0007] In one or more embodiments, the first gate electrode is made of a first gate electrode paste, which includes nanosilver particles, an organic vehicle, an organic solvent, a coupling agent, and a rheology control agent. The mass fraction of the nanosilver particles in the first gate electrode paste is 30-99%.

[0008] In one or more embodiments, the second gate line electrode is made of a second gate line electrode paste, which includes nano silver particles, an organic vehicle, an organic solvent, a coupling agent, and a rheology control agent. The mass fraction of the nano silver particles in the second gate line electrode paste is 30-99%.

[0009] In one or more embodiments, the transparent conductive layer is one or more selected from indium tin oxide (ITO) transparent conductive glass, indium cerium oxide (ICO) transparent conductive glass, tungsten-doped indium oxide (IWO) transparent conductive glass, and indium zinc oxide (IZO) transparent conductive glass.

[0010] In one or more embodiments, the transparent conductive layer has a thickness of 1-100 nm.

[0011] In one or more embodiments, the crystalline silicon cell is a tunneling oxide passivated contact (TOPCon) solar cell or a heterojunction (HJT) solar cell.

[0012] Another aspect of the present invention provides a method for preparing the perovskite tandem solar cell according to any embodiment of the present invention, the method comprising the following steps:

[0013] S1: preparing the first battery component and the bottom electrode;

[0014] S2: preparing a second battery assembly on the first battery assembly;

[0015] S3: preparing a transparent conductive layer on the second battery assembly;

[0016] S4: coating a first gate line electrode slurry on the transparent conductive base layer, and then drying it to obtain a first gate line electrode intermediate;

[0017] S5: coating a second gate electrode slurry on the first gate electrode intermediate;

[0018] S6: curing the first gridline electrode intermediate and the second gridline electrode slurry to convert the first gridline electrode intermediate and the second gridline electrode slurry into the first gridline electrode and the second gridline electrode, respectively, to obtain a perovskite stacked solar cell.

[0019] In one or more embodiments, the method of coating the first gate electrode slurry is one or more of screen printing, electrospraying, and inkjet printing.

[0020] In one or more embodiments, in step S4, the drying temperature is 30-80°C.

[0021] In one or more embodiments, the second gate electrode paste is coated by one or more of screen printing, electrospraying, and inkjet printing.

[0022] In one or more embodiments, in step S6, the curing treatment is thermal curing, the curing temperature is 70-200° C., and the curing time is 1-30 min.

[0023] The perovskite tandem solar cell of the present invention adopts a composite grid line structure, which can reduce the contact resistance loss between the TCO and the grid line and the body resistance loss between the fine grid and the main grid, thereby improving the fill factor of the device and improving the efficiency of the battery. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 Schematic diagram of the structure of perovskite tandem solar cells in some embodiments of the present invention.

[0025] Explanation of the reference numerals: 1 is the bottom cell metal grid line, 2 is the crystalline silicon bottom cell, 3 is the perovskite top cell, 4 is the TCO layer, 5 is the first metal grid line, and 6 is the second metal grid line. DETAILED DESCRIPTION

[0026] To facilitate understanding of the features and effects of the present invention by those skilled in the art, the following provides a general description and definition of the terms and expressions used herein. Unless otherwise indicated, all technical and scientific terms used herein have the ordinary meanings as understood by those skilled in the art regarding the present invention. In the event of conflict, the definitions in this specification shall prevail.

[0027] The theories or mechanisms described and disclosed herein, whether correct or incorrect, should not limit the scope of the present invention in any way, that is, the present invention can be implemented without being limited by any specific theory or mechanism.

[0028] Herein, “comprising,” “including,” “containing” and similar terms encompass the meanings of “consisting essentially of” and “consisting of,” for example, when “A comprises B and C” is disclosed herein, “A consists essentially of B and C” and “A consists of B and C” should be deemed to have been disclosed herein.

[0029] Throughout this document, all features, such as values, amounts, amounts, and concentrations, specified in numerical ranges or percentage ranges are provided for simplicity and convenience only. Accordingly, the description of numerical ranges or percentage ranges should be considered to encompass and specifically disclose all possible subranges and individual values within those ranges (including integers and fractions).

[0030] In this document, unless otherwise specified, percentage refers to mass percentage and ratio refers to mass ratio.

[0031] Herein, when describing embodiments or examples, it should be understood that they are not intended to limit the present invention to these embodiments or examples. On the contrary, all substitutes, modifications and equivalents of the methods and materials described herein are within the scope defined by the present invention.

[0032] In this document, for the sake of brevity, not all possible combinations of the various technical features in each embodiment or example are described. Therefore, as long as there are no contradictions in the combination of these technical features, the various technical features in each embodiment or example can be combined in any way, and all possible combinations should be considered to be within the scope of this specification.

[0033] The perovskite tandem solar cell of the present invention comprises, in sequence, a bottom electrode, a first cell component, a second cell component, a transparent conductive layer, a first grid electrode, and a second grid electrode; the first cell component is one or more selected from a crystalline silicon cell, a perovskite cell, and a copper indium gallium selenide cell; the second cell component is a perovskite cell; the contact resistivity between the first grid electrode and the transparent conductive film is ≤10mΩ*cm 2 , for example, less than 2mΩ*cm 2 , less than 4mΩ*cm 2 、less than 6mΩ*cm 2 、less than 8mΩ*cm 2 The volume resistivity of the second gate line electrode is ≤10 -5 Ω*cm, for example, less than 10 -6 Ω*cm, less than 10 -7 Ω*cm.

[0034] In the perovskite tandem solar cell of the present invention, the height of the first grid line electrode is 1-20 μm, for example, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm; the width of the first grid line electrode is 1-100 μm, for example, 2 μm, 4 μm, 6 μm, 8 μm, 10 μm, 12 μm, 14 μm, 16 μm, 18 μm, 20 μm, 22 μm, 2 4μm, 26μm, 28μm, 30μm, 32μm, 34μm, 36μm, 38μm, 40μm, 42μm, 44μm, 46μm, 48μm, 50μm, 52μm, 54μm, 56μm, 58μm, 60μm, 62μm, 64μm, 66μm, 68μm, 70μm, 72μm, 74μm, 76μm, 78μm, 80μm, 82μm, 84μm, 86μm, 88μm, 90μm, 92μm, 94μm, 96μm, 98μm.

[0035] In the perovskite tandem solar cell of the present invention, the height of the second grid line electrode is 1-20 μm, for example, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm; the width of the second grid line electrode is 1-100 μm, for example, 2 μm, 4 μm, 6 μm, 8 μm, 10 μm, 12 μm, 14 μm, 16 μm, 18 μm, 20 μm, 22 μm, 2 4μm, 26μm, 28μm, 30μm, 32μm, 34μm, 36μm, 38μm, 40μm, 42μm, 44μm, 46μm, 48μm, 50μm, 52μm, 54μm, 56μm, 58μm, 60μm, 62μm, 64μm, 66μm, 68μm, 70μm, 72μm, 74μm, 76μm, 78μm, 80μm, 82μm, 84μm, 86μm, 88μm, 90μm, 92μm, 94μm, 96μm, 98μm.

[0036] In the perovskite tandem solar cell of the present invention, both the first gridline electrode and the second gridline electrode can be prepared using commercially available electrode slurry. The electrode slurry includes nanosilver particles, an organic vehicle, an organic solvent, a coupling agent, and a rheology control agent. The mass fraction of the nanosilver particles in the electrode slurry is 30-99%, for example, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, or 95%. The organic vehicle is a resin, and the resin used in the slurry is a common resin, including but not limited to one or more of epoxy resin, polyurethane resin, phenolic resin, ethyl cellulose, phenoxy resin, and acrylic resin. The addition of the organic solvent, coupling agent, and rheology control agent can improve the printing quality and curing quality of the slurry.

[0037] In the perovskite tandem solar cell of the present invention, the thickness of the transparent conductive substrate is 1-100nm, for example, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 14nm, 16nm, 18nm, 20nm, 22nm, 24nm, 26nm, 28nm, 30nm, 32nm, 34nm, 36nm, 38nm, 40nm, 42nm, 44nm, 46nm, 48nm, 50nm, 52nm, 54nm, 56nm, 58nm, 60nm, 62nm, 64nm, 66nm, 68nm, 70nm, 72nm, 74nm, 76nm, 78nm, 80nm, 82nm, 84nm, 86nm, 88nm, 90nm, 92nm, 94nm, 96nm, and 98nm.

[0038] The present invention also provides a method for preparing a perovskite tandem solar cell, comprising the following steps:

[0039] S1: Preparation of the first battery component and bottom electrode

[0040] S2: preparing a second battery assembly on the first battery assembly;

[0041] S3: preparing a transparent conductive layer on the second battery assembly;

[0042] S4: coating a first gate line electrode slurry on the transparent conductive base layer, and then drying it to obtain a first gate line electrode intermediate;

[0043] S5: coating a second gate electrode slurry on the first gate electrode intermediate;

[0044] S6: curing the first gridline electrode intermediate and the second gridline electrode slurry to convert the first gridline electrode intermediate and the second gridline electrode slurry into the first gridline electrode and the second gridline electrode, respectively, to obtain a perovskite stacked solar cell.

[0045] In step S2, the second battery component is a perovskite battery, which can be any type of perovskite battery commonly used in the art.

[0046] In step S3, the thickness of the prepared transparent conductive substrate is 1-100nm, for example, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 14nm, 16nm, 18nm, 20nm, 22nm, 24nm, 26nm, 28nm, 30nm, 32nm, 34nm, 36nm, 38nm, 40nm, 42nm, 44nm, 46nm, 48nm, 50nm, 52nm, 54nm, 56nm, 58nm, 60nm, 62nm, 64nm, 66nm, 68nm, 70nm, 72nm, 74nm, 76nm, 78nm, 80nm, 82nm, 84nm, 86nm, 88nm, 90nm, 92nm, 94nm, 96nm, and 98nm.

[0047] In step S4, the drying temperature should be set so that after drying, the first gate line will not be deformed due to the deposition of the second gate line. Therefore, it is best to set the drying temperature to less than 80°C. In some embodiments, the drying temperature is between 30-80°C, for example, 35°C, 40°C, 45°C, 50°C, 55°C, 60°C, 65°C, 70°C, and 75°C.

[0048] In step S6, the curing treatment is thermal curing, the curing temperature is 70-200°C, for example, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C, 180°C, 190°C, and the curing time is 1-30min, for example, 2min, 4min, 6min, 8min, 10min, 12min, 14min, 16min, 18min, 20min, 22min, 24min, 26min, 28min. The curing temperature for the composite grid line should be less than 200°C, and the contact resistivity between the grid line printed in the first step and the TCO cured at this temperature is less than 10mΩ*cm2, and the bulk resistivity of the grid line printed in the second step is less than 10 -5 Ω*cm, controlling the above parameters within the above range is beneficial to improving the efficiency of the battery.

[0049] The method for preparing a perovskite stacked solar cell of the present invention performs metallization treatment on the cell assembly by a screen printing method, and the obtained grid line electrode can reduce the cell series resistance, thereby increasing the current and fill factor, and further improving the cell efficiency.

[0050] The present invention will be described below by way of specific examples. It should be understood that these examples are illustrative only and are not intended to limit the scope of the present invention. The methods, reagents, and materials used in the examples are, unless otherwise stated, conventional methods, reagents, and materials in the art. The compounds in the examples can all be purchased from commercial sources.

[0051] Example 1

[0052] This embodiment prepares a crystalline silicon perovskite tandem solar cell module by the following steps:

[0053] (1) Select n-type c-Si with a resistivity of ~2Ω*cm and a thickness of 300μm; use chemical vapor deposition (PECVD) technology to deposit intrinsic amorphous silicon layers (a-Si(i)) on both sides of c-Si at 200℃ to obtain a-Si(i) layer with a thickness of 5nm; use PECVD technology to deposit a nc-Si(p) layer with a thickness of 10nm on the surface of the a-Si(i) layer on the back of c-Si at 200℃; use PECVD technology to deposit a nc-Si(p) layer with a thickness of 10nm on the surface of the a-Si(i) layer on the front of c-Si at 200℃. Si(n) layer, and then using the PECVD process, a 10nm thick nc-Si(p) layer is deposited on the nc-Si(n) layer at 200℃, and an 80nm thick ITO layer is prepared on the surface of the nc-Si(p) layer on the back of the c-Si by magnetron sputtering; a 20nm thick ITO layer is prepared on the surface of the nc-Si(p) layer on the front of the c-Si by magnetron sputtering; a metal Ag grid line with a width of 30μm and a height of 10μm is prepared on the ITO layer on the back of the c-Si by screen printing, thereby obtaining a bottom battery with a total thickness of 310μm.

[0054] (2) Preparation of perovskite top cell on crystalline silicon bottom cell: A NiO layer with a thickness of 20 nm was prepared on the crystalline silicon bottom cell by magnetron sputtering; a slit coating method was used to prepare a (Cs 0.15 FA 0.85 )Pb(I 0.7 Br 0.3 )3, a perovskite active layer with a thickness of 1000nm; a C60 layer with a thickness of 30nm is prepared on the perovskite active layer by thermal evaporation; a SnO2 layer with a thickness of 20nm is prepared on the C60 layer by atomic layer deposition (ALD); an IZO layer with a thickness of 100nm is prepared on the SnO2 layer by magnetron sputtering; a metal Ag grid line with a width of 50μm and a height of 10μm is prepared on the IZO layer by screen printing, thereby obtaining a 11.17μm perovskite top cell.

[0055] (3) An IZO layer with a thickness of 100 nm was prepared on the perovskite top cell using magnetron sputtering.

[0056] (4) A first gate electrode slurry (Dico, low contact resistance: dk61a) having good contact resistance with IZO was coated on the IZO layer by screen printing and dried at 60° C. to obtain a first gate electrode intermediate.

[0057] (5) A second gate line electrode paste with low body resistivity (Dike, low line resistance: dk51a) is overprinted on the first gate line intermediate electrode by screen printing.

[0058] (6) The first gridline electrode intermediate and the second gridline electrode slurry are cured at 120° C. for 20 min to convert the first gridline electrode intermediate and the second gridline electrode slurry into the first gridline electrode and the second gridline electrode, respectively, to obtain the crystalline silicon perovskite laminated solar cell module of this embodiment.

[0059] Comparative Example 1

[0060] The crystalline silicon perovskite laminated solar cell module in this comparative example is prepared by a method similar to that in Example 1, except that step (5) is not performed in this comparative example, and the first gridline intermediate after drying in step (4) is directly subjected to the curing treatment of step (6).

[0061] Comparative Example 2

[0062] The crystalline silicon perovskite laminated solar cell module in this comparative example was prepared by a method similar to that in Example 1, except that step (4) was not performed in this comparative example, and the second grid electrode slurry was directly coated on the perovskite top cell by screen printing, and then the second grid electrode slurry was cured in step (6).

[0063] Test Example 1

[0064] The present invention measured the contact resistivity between the first gridline electrode and the transparent conductive layer of the crystalline silicon perovskite tandem solar cell modules prepared in Example 1 and Comparative Examples 1-2 using the transfer length measurement method. The volume resistivity of the second gridline electrode of the crystalline silicon perovskite tandem solar cell modules prepared in Example 1 and Comparative Examples 1-2 was calculated using the following formula: Volume resistivity = Line resistance × gridline width × gridline height, where line resistance was measured using an ohmmeter, and gridline width and height were measured using a 3D microscope. The specific test results are shown in Table 1.

[0065] Table 1: Electrode parameters of crystalline silicon perovskite tandem solar cells of Example 1 and Comparative Examples 1-2

[0066]

[0067] As can be seen from Table 1, the crystalline silicon perovskite stacked solar cell prepared by the curing process of the present invention can achieve a contact resistivity between the first grid line electrode and the transparent conductive layer of no more than 10 mΩ*cm 2 , the volume resistivity of the second gate line electrode is not greater than 10 -5 Ω*cm.

[0068] Test Example 2

[0069] At 25°C and AM 1.5G standard solar spectrum, using a solar simulator with the voltage range set to -0.3-2.05V, the inverted wide-bandgap perovskite / heterojunction silicon tandem solar cells of Example 1 and Comparative Examples 1-2 (open circuit voltage, short-circuit current density, fill factor, and photoelectric conversion efficiency) were measured.

[0070] (1) Open circuit voltage (Voc): The voltage value corresponding to the current being zero.

[0071] (2) Short-circuit current density (Jsc): The current value when the voltage is zero is the short-circuit current (Isc), and the current per unit battery surface area is the short-circuit current density.

[0072] (3) Fill factor (FF): The ratio of the maximum output power (Pmax) of the battery to the product of the open circuit voltage and the short circuit current. The calculation formula is (Pmax / Voc*Isc), where the maximum power point is the point where the battery output power reaches its maximum value.

[0073] (4) Photoelectric conversion efficiency (PCE): Photoelectric conversion efficiency refers to the ratio of maximum output power to incident light power (Pin), and the calculation formula is (Pmax / Pin)*100%.

[0074] The test results of the open circuit voltage, short circuit current density, fill factor and photoelectric conversion efficiency of the crystalline silicon perovskite tandem solar cells of Example 1 and Comparative Examples 1-2 are shown in Table 2.

[0075] Table 2: Performance parameters of crystalline silicon perovskite tandem solar cells of Example 1 and Comparative Examples 1-2

[0076] Device Voc(V) <![CDATA[Jsc(mA / cm 2 )]]> FF(%) PCE (%) Example 1 1.905 18.14 73.97 25.56 Comparative Example 1 1.902 18.15 70.61 24.37 Comparative Example 2 1.904 18.14 68.67 23.71

[0077] As can be seen from Table 2, the current and voltage of Example 1 are not much different from those of Comparative Examples 1 and 2, but the fill factor of the perovskite tandem solar cell in Example 1 is about 5% higher than that in Comparative Example 1 and about 7% higher than that in Comparative Example 2. This shows that the cell efficiency of the perovskite tandem solar cell with the first gate electrode and the second gate electrode having the characteristics described in the present invention can be improved to a certain extent, especially the fill factor is significantly improved.

Claims

1. A perovskite tandem solar cell, characterized in that: The perovskite stacked solar cell comprises, in sequence, a bottom electrode, a first cell assembly, a second cell assembly, a transparent conductive layer, a first grid electrode and a second grid electrode, wherein the second grid electrode is overlapped and arranged on the first grid electrode; the first cell assembly is one or more selected from a crystalline silicon cell, a perovskite cell and a copper indium gallium selenide cell, and the second cell assembly is a perovskite cell; the contact resistivity between the first grid electrode and the transparent conductive layer is ≤10mΩ*cm 2 The volume resistivity of the second gate line electrode is ≤10 -5 Ω*cm.

2. The perovskite tandem solar cell according to claim 1, wherein The first battery component is a crystalline silicon battery.

3. The perovskite tandem solar cell according to claim 1, wherein The first gate line electrode has a height of 1-20 μm and a width of 1-100 μm; the second gate line electrode has a height of 1-20 μm and a width of 1-100 μm.

4. The perovskite tandem solar cell according to claim 1, wherein The perovskite tandem solar cell meets one or more of the following characteristics: The first gate electrode is made of a first gate electrode slurry, which includes nano-silver particles, an organic vehicle, an organic solvent, a coupling agent, and a rheology control agent, wherein the mass fraction of the nano-silver particles in the first gate electrode slurry is 30-99%; The second gate electrode is made of a second gate electrode paste, which includes nano-silver particles, an organic vehicle, an organic solvent, a coupling agent, and a rheology control agent, wherein the mass fraction of the nano-silver particles in the second gate electrode paste is 30-99%; The transparent conductive layer is one or more selected from indium tin oxide (ITO) transparent conductive glass, indium cerium oxide (ICO) transparent conductive glass, tungsten-doped indium oxide (IWO) transparent conductive glass and indium zinc oxide (IZO) transparent conductive glass; The thickness of the transparent conductive layer is 1-100 nm.

5. The perovskite tandem solar cell according to claim 2, wherein: The crystalline silicon cell is a tunneling oxide passivation contact (TOPCon) solar cell or a heterojunction (HJT) solar cell.

6. A method for preparing the perovskite tandem solar cell according to any one of claims 1 to 5, characterized in that: The method comprises the following steps: S1: preparing the first battery component and the bottom electrode; S2: preparing a second battery assembly on the first battery assembly; S3: preparing a transparent conductive layer on the second battery assembly; S4: coating a first gate line electrode slurry on the transparent conductive base layer, and then drying it to obtain a first gate line electrode intermediate; S5: coating a second gate electrode slurry on the first gate electrode intermediate; S6: curing the first gridline electrode intermediate and the second gridline electrode slurry to convert the first gridline electrode intermediate and the second gridline electrode slurry into the first gridline electrode and the second gridline electrode, respectively, to obtain a perovskite stacked solar cell.

7. The method according to claim 6, wherein The method of coating the first gate line electrode slurry is one or more of screen printing, electrospraying, and inkjet printing.

8. The method according to claim 6, wherein In step S4, the drying temperature is 30-80°C.

9. The method according to claim 6, wherein The second gate line electrode slurry is coated by one or more of screen printing, electrospraying, and inkjet printing.

10. The method according to claim 6, wherein In step S6, the curing treatment is thermal curing, the curing temperature is 70-200° C., and the curing time is 1-30 minutes.

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