Display device

Abstract

The display device includes a first pixel and a second pixel adjacent to the first pixel, the display device may include: a substrate; the pixel circuit layer is arranged on the substrate; and a display element layer including a plurality of anode electrodes disposed on the pixel circuit layer, in which the plurality of anode electrodes includes a first anode electrode corresponding to the first pixel and a second anode electrode corresponding to the second pixel. The pixel circuit layer may include a via layer facing the display element layer and including a first slit pattern overlapping the first anode electrode and a second slit pattern overlapping the second anode electrode, the second slit pattern may be different from the first slit pattern in at least one of shape, size, and position.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a display device and a method for manufacturing the display device. Background Art

[0002] As information technology develops, the importance of display devices as a connection medium between users and information is becoming apparent. In response to this, the use of display devices such as liquid crystal display devices and organic light emitting display devices is increasing. Summary of the Invention

[0003] An object of the present disclosure is to provide a display device that improves user visibility by improving a diffraction pattern.

[0004] Another object of the present disclosure is to provide a method of manufacturing a display device having improved user visibility by improving a diffraction pattern.

[0005] However, the objects of the present disclosure are not limited to the above-mentioned objects, and various extensions can be made without departing from the spirit and scope of the present disclosure.

[0006] To achieve the purpose of the present disclosure, according to an embodiment of the present disclosure, a display device including a first pixel and a second pixel adjacent to the first pixel may include: a pixel circuit layer disposed on a substrate; and a display element layer including a plurality of anode electrodes disposed on the pixel circuit layer, wherein the plurality of anode electrodes include a first anode electrode corresponding to the first pixel and a second anode electrode corresponding to the second pixel. The pixel circuit layer may include a through-hole layer facing the display element layer, the upper surface of the through-hole layer may include a plurality of slit patterns respectively overlapping with the plurality of anode electrodes, and the plurality of slit patterns may be adjacent to the display element layer, the plurality of slit patterns may include a first slit pattern overlapping with the first anode electrode and a second slit pattern overlapping with the second anode electrode, and the first slit pattern and the second slit pattern may differ from each other in at least one of shape, size, and position, and portions of the first anode electrode and the second anode electrode overlapping with the first slit pattern and the second slit pattern may have shapes corresponding to the first slit pattern and the second slit pattern.

[0007] In an embodiment, the first pixel may include a 1-1th sub-pixel and a 1-2th sub-pixel adjacent to the 1-1th sub-pixel, the second pixel may include a 2-1th sub-pixel and a 2-2th sub-pixel adjacent to the 2-1st sub-pixel, the first anode electrode may include a 1-1th sub-anode electrode corresponding to the 1-1th sub-pixel and a 1-2th sub-anode electrode corresponding to the 1-2nd sub-pixel, and the second anode electrode may include a 2-1st sub-anode electrode corresponding to the 2-1st sub-pixel and a 2-2nd sub-anode electrode corresponding to the 2-2nd sub-pixel. The first slit pattern may include a 1-1 sub-slit pattern corresponding to the 1-1 sub-anode electrode and a 1-2 sub-slit pattern corresponding to the 1-2 sub-anode electrode, and the 1-1 sub-slit pattern and the 1-2 sub-slit pattern may have substantially the same shape, and the second slit pattern may include a 2-1 sub-slit pattern corresponding to the 2-1 sub-anode electrode and a 2-2 sub-slit pattern corresponding to the 2-2 sub-anode electrode, and the 2-1 sub-slit pattern and the 2-2 sub-slit pattern may have substantially the same shape.

[0008] In an embodiment, the 1-1th sub-slit pattern and the 1-2th sub-slit pattern may have different sizes.

[0009] In an embodiment, the 2-1th sub-slit pattern and the 2-2nd sub-slit pattern may have different sizes.

[0010] In an embodiment, each of the first slit pattern and the second slit pattern may have an elliptical shape.

[0011] In an embodiment, a first center of the first slit pattern in the first pixel and a second center of the second slit pattern in the second pixel may be disposed at substantially the same position.

[0012] In an embodiment, the first slit pattern may include a 1-1 groove and a 1-2 groove having a closed loop shape that may be sequentially formed spaced apart from each other in a radial direction relative to the first center, and the second slit pattern may include a 2-1 groove and a 2-2 groove having a closed loop shape that may be sequentially formed spaced apart from each other in a radial direction relative to the second center.

[0013] In an embodiment, an area of a portion surrounded by the 1-1th trench in the first slit pattern may be different from an area of a portion surrounded by the 2-1th trench in the second slit pattern.

[0014] In an embodiment, each of the 1-1 groove and the 1-2 groove may have a width of approximately 1.5 μm or less in a radial direction relative to the first center, and each of the 2-1 groove and the 2-2 groove may have a width of approximately 1.5 μm or less in a radial direction relative to the second center.

[0015] In an embodiment, the 1-1th groove and the 1-2th groove may be spaced apart from each other by a distance of approximately 1.5 μm or less in the radial direction relative to the first center, and the 2-1th groove and the 2-2th groove may be spaced apart from each other by a distance of approximately 1.5 μm or less in the radial direction relative to the second center.

[0016] In an embodiment, the farthest spacing distance between the first center and the 1-1 groove can be defined as a first long radius, the farthest spacing distance between the second center and the 2-1 groove can be defined as a second long radius, and a virtual line extending on the first long radius and a virtual line extending on the second long radius can intersect each other.

[0017] In an embodiment, the closest spacing distance between the first center and the 1-1 groove may be defined as a first short radius, the closest spacing distance between the second center and the 2-1 groove may be defined as a second short radius, the first long radius and the first short radius may be determined according to Formula 1, and the second long radius and the second short radius may be determined according to Formula 2, and

[0018] [Formula 1](1-(RB1) 2 / (RA1) 2 ) 1 / 2 ≤0.7

[0019] [Formula 2](1-(RB2) 2 / (RA2) 2 ) 1 / 2 ≤0.7

[0020] RA1, RB1, RA2, and RB2 may represent a first long radius, a first short radius, a second long radius, and a second short radius, respectively.

[0021] In an embodiment, the first pixel may further include a 1st-3rd sub-pixel adjacent to the 1st-1st sub-pixel and the 1st-2nd sub-pixel, the second pixel may further include a 2nd-3rd sub-pixel adjacent to the 2nd-1st sub-pixel and the 2nd-2nd sub-pixel, the first anode electrode may further include a plurality of 1st-3rd sub-anode electrodes corresponding to the 1st-3rd sub-pixels, the second anode electrode may further include a plurality of 2nd-3rd sub-anode electrodes corresponding to the 2nd-3rd sub-pixels, the first slit pattern may further include a plurality of 1st-3rd sub-slit patterns overlapping with the plurality of 1st-3rd sub-anode electrodes, and the second slit pattern may further include a plurality of 2nd-3rd sub-slit patterns overlapping with the plurality of 2nd-3rd sub-anode electrodes.

[0022] In an embodiment, the position of at least one of the first centers of the plurality of 1st-3rd sub-slit patterns in the plurality of 1st-3rd sub-anode electrodes in the 1st-3rd sub-pixel may be different from the position of at least one of the second centers of the plurality of 2nd-3rd sub-slit patterns in the plurality of 2nd-3rd sub-anode electrodes in the 2nd-3rd sub-pixel.

[0023] In an embodiment, at least one of the 1-1th, 1-2th, and 1-3th sub-slit patterns may have a size different from another of the 1-1th, 1-2th, and 1-3th sub-slit patterns.

[0024] In an embodiment, at least one of the 2-1st, 2-2nd, and 2-3rd sub-slit patterns may have a size different from another of the 2-1st, 2-2nd, and 2-3rd sub-slit patterns.

[0025] To achieve the purpose of the present disclosure, according to an embodiment of the present disclosure, a method for manufacturing a display device including a first pixel and a second pixel adjacent to the first pixel may include: forming a pixel circuit layer on a substrate; forming a through-hole layer on the pixel circuit layer, the through-hole layer may include a first portion corresponding to the first pixel and a second portion corresponding to the second pixel; forming a plurality of slit patterns in the through-hole layer, the plurality of slit patterns may include a first slit pattern corresponding to the first portion of the through-hole layer and a second slit pattern corresponding to the second portion of the through-hole layer; and forming a plurality of anode electrodes including a first anode electrode overlapping with the first slit pattern and a second anode electrode overlapping with the second slit pattern, and the first slit pattern and the second slit pattern may be different in at least one of shape, size and position.

[0026] In an embodiment, the formation of multiple slit patterns may include irradiating light to the first and second portions of the through-hole layer using a mask, in which openings corresponding to the shapes of the first and second slit patterns may be formed; and forming the first slit pattern and the second slit pattern through an exposure and development process.

[0027] In an embodiment, each of the first and second slit patterns may be formed in an elliptical shape, and a position of the first and second slit patterns may be different from each other.

[0028] In an embodiment, portions of the first and second anode electrodes overlapping the first and second slit patterns may have shapes corresponding to the first and second slit patterns.

[0029] According to an embodiment of the present disclosure, by forming an anode electrode structure capable of emitting light of the same wavelength from each of adjacent sub-pixels in different directions, the diffraction pattern between the light emitted from adjacent sub-pixels can be minimized, and thus a display device that can improve user visibility and a method of manufacturing a display device can be provided.

[0030] However, the effects of the present disclosure are not limited to the above-described effects, but can be variously extended without departing from the spirit and scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and other features of the present disclosure will become more apparent by further describing the embodiments of the present disclosure in detail with reference to the accompanying drawings, in which:

[0032] Figure 1 is a perspective view of a display device according to an embodiment of the present disclosure;

[0033] Figure 2 is a side view of a display device according to an embodiment of the present disclosure;

[0034] Figure 3 is a plan view of a display panel according to an embodiment of the present disclosure;

[0035] Figure 4 It is an icon Figure 3 A plan view of an embodiment of two pixels adjacent to each other among the pixels shown in FIG.

[0036] Figure 5A It is along Figure 4 A schematic cross-sectional view taken along line II';

[0037] Figure 5B yes Figure 5A An enlarged schematic cross-sectional view of region A;

[0038] Figure 6 It is an icon Figure 4 A plan view of an embodiment of a first slit pattern and a second slit pattern shown in FIG;

[0039] Figure 7 is a plan view illustrating an embodiment of a 1-1 sub-slit pattern and a 2-1 sub-slit pattern;

[0040] Figure 8 It is an icon Figure 3 A plan view of an embodiment of two pixels adjacent to each other among the pixels;

[0041] Figure 9 It is an icon Figure 8 A plan view of an embodiment of a first slit pattern and a second slit pattern shown in FIG;

[0042] Figure 10 is a schematic cross-sectional view illustrating forming a pixel circuit layer on a substrate;

[0043] Figure 11 is a schematic cross-sectional view illustrating forming a first photosensitive material layer on a pixel circuit layer;

[0044] Figure 12 is a schematic cross-sectional view illustrating a state in which a first pattern mask is provided on a first photosensitive material layer;

[0045] Figure 13 is a schematic cross-sectional view illustrating irradiating light toward a first pattern mask and a first photosensitive material layer;

[0046] Figure 14 is a schematic cross-sectional view illustrating development of a partial area of the exposed first photosensitive material layer;

[0047] Figure 15 is a schematic cross-sectional view illustrating formation of an anode electrode on a through-hole layer;

[0048] Figure 16 is a schematic cross-sectional view illustrating forming a second photosensitive material layer on the through-hole layer and the anode electrode;

[0049] Figure 17 is a schematic cross-sectional view illustrating a state in which a second pattern mask is provided on a second photosensitive material layer;

[0050] Figure 18 is a schematic cross-sectional view illustrating irradiating light toward a second pattern mask and a second photosensitive material layer;

[0051] Figure 19 is a schematic cross-sectional view illustrating forming a pixel defining layer by developing a partial area of the exposed second photosensitive material layer;

[0052] Figure 20 is a schematic cross-sectional view illustrating formation of a light emitting element layer and a cathode electrode on the anode electrode exposed by the opening; and

[0053] Figure 21 is a schematic cross-sectional view illustrating the formation of a thin film encapsulation layer and a window on a cathode electrode. DETAILED DESCRIPTION

[0054] In the following description, for the purpose of explanation, many specific details are set forth in order to provide a thorough understanding of the various embodiments or implementations of the present disclosure. As used herein, "embodiment" and "implementation" are interchangeable terms that are non-limiting examples of the apparatus or method disclosed herein. However, it is apparent that various embodiments may be practiced without these specific details or using one or more equivalent arrangements. Here, the various embodiments are not necessarily exclusive and do not limit the present disclosure. For example, the specific shape, configuration, and characteristics of an embodiment may be used or implemented in other embodiments.

[0055] Unless otherwise indicated, the illustrated embodiments should be understood to provide features of the present disclosure. Therefore, unless otherwise indicated, the features, components, modules, layers, films, panels, regions and / or aspects of the various embodiments (hereinafter individually or collectively referred to as "elements") may be combined, separated, interchanged and / or rearranged in other ways without departing from the present invention.

[0056] The use of cross hatching and / or shading in the accompanying drawings is generally provided to make the boundaries between adjacent elements clear. Therefore, unless otherwise specified, whether cross hatching or shading exists or does not exist does not convey or indicate any preference or requirement for a specific material, material properties, size, ratio, commonality between the illustrated elements and / or any other characteristics, attributes, properties, etc. of the elements. Further, in the accompanying drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. When the embodiment can be implemented in different ways, the specific process sequence can be performed differently from the described sequence. For example, two processes described in succession can be performed substantially simultaneously or in an order opposite to the described order. In addition, the same figure numerals and / or reference characters refer to the same elements.

[0057] When an element such as a layer is referred to as being "on" another element or layer, "connected to" or "coupled to" another element or layer, it may be directly on, directly connected to or coupled to the other element or layer, or there may be an intervening element or layer. However, when an element or layer is referred to as being "directly on" another element or layer, "directly connected to" or "directly coupled to" another element or layer, there may be no intervening element or layer. For this reason, the term "connected" may refer to a physical connection, electrical connection and / or fluid connection with or without an intervening element. Further, the X-axis, Y-axis and Z-axis are not limited to the three axes of a rectangular coordinate system (such as, x-axis, y-axis and z-axis) and may be interpreted in a broader sense. For example, the X-axis, Y-axis and Z-axis may be perpendicular to each other, or may be different directions that are not perpendicular to each other. A similar interpretation may be made to the X-axis direction, the Y-axis direction and the Z-axis direction.

[0058] For the purposes of the present disclosure, “at least one of A and B” may be interpreted as only A, only B, or any combination of A and B. Furthermore, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0059] Although the terms "first," "second," etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, the first element discussed below could be referred to as the second element without departing from the teachings of the present disclosure.

[0060] For descriptive purposes, spatially relative terms such as "below," "beneath," "under," "down," "above," "up," "above," "higher," and "side" (e.g., as in "sidewall") may be used herein to describe the relationship of one element to another element(s) as illustrated in the accompanying drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientation depicted in the accompanying drawings. For example, if the device in the drawings is flipped, elements described as being "below" or "beneath" other elements or features will then be oriented as being "above" the other elements or features. Thus, the term "below" can encompass both above and below orientations. Furthermore, the device may be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and therefore the spatially relative descriptors used herein should be interpreted accordingly.

[0061] As used herein, the term "comprising" or "including" or "comprising ...

[0062] Various embodiments are described herein with reference to cross-sectional illustrations and / or exploded illustrations that are schematic illustrations of embodiments and / or intermediate structures. As such, variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Therefore, the embodiments disclosed herein should not necessarily be construed as limited to the specific illustrated shapes of the regions, but rather should include deviations in shape due to, for example, manufacturing. In this manner, the regions illustrated in the figures may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device and, therefore, are not necessarily intended to be limiting.

[0063] As a convention in this area, some embodiments are described and illustrated in the accompanying drawings according to functional blocks, units and / or modules. It will be appreciated by those skilled in the art that these blocks, units and / or modules are physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements and wiring connections that can be formed using semiconductor-based manufacturing technology or other manufacturing technology. When blocks, units and / or modules are implemented by microprocessors or other similar hardware, software (e.g., microcode) can be used to program and control them to perform the various functions discussed herein, and they can be optionally driven by firmware and / or software. It is also contemplated that each block, unit and / or module can be implemented by dedicated hardware, or be implemented as a combination of dedicated hardware that performs certain functions and a processor that performs other functions (e.g., one or more programmed microprocessors and associated circuits). In addition, each block, unit and / or module in some embodiments can be physically separated into two or more interacting and discrete blocks, units and / or modules without departing from the scope of the present invention. Furthermore, the blocks, units and / or modules of some embodiments may be physically combined into more complex blocks, units and / or modules without departing from the scope of the inventive concept.

[0064] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will be further understood that terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present disclosure, and should not be interpreted in an idealized or overly formal sense unless explicitly defined as such herein.

[0065] Figure 1 is a perspective view of a display device according to an embodiment of the present disclosure, Figure 2 is a side view of a display device according to an embodiment of the present disclosure, and Figure 3 is a plan view of a display panel according to an embodiment of the present disclosure.

[0066] refer to Figures 1 to 3 , the display device DD may include a display panel PNL and a window WD.

[0067] The display device DD may include a display area DD_DA that displays an image and a non-display area DD_NDA that does not display an image. The non-display area DD_NDA may be provided on at least one side of the display area DD_DA. As an example, the non-display area DD_NDA may be provided to surround the display area DD_DA.

[0068] like Figures 1 to 3 As shown in FIG, the display device DD may be provided in a rectangular plate shape with rounded corners, but according to an embodiment, the corners of the display device DD may have a curved shape. However, the present disclosure is not necessarily limited thereto, and the display device DD may be implemented in various shapes.

[0069] The display device DD can be applied to an electronic device such as a smart phone, a TV, a tablet PC, a mobile phone, a video phone, an e-book reader, a desktop PC, a laptop PC, a netbook computer, a workstation, a server, a personal digital assistant (PDA), a portable multimedia player (PMP), an MP3 player, a medical device, a camera, or a wearable device, wherein a display surface can be applied to at least one surface thereof.

[0070] refer to Figure 3 The display panel PNL and the substrate SUB for forming the display panel PNL may include a display area DA for displaying an image and a non-display area NDA other than the display area DA. The display area DA may constitute a screen on which an image may be displayed, and the non-display area NDA may be the remaining area other than the display area DA.

[0071] For ease of description, Figure 3 1 and 2 briefly illustrate the structure of the display panel PNL based on the display area DA. However, according to embodiments, at least one driving circuit portion (eg, at least one of a scan driver and a data driver), a line, and / or a pad may be further provided in the display panel PNL.

[0072] The first pixel PXL1 and the second pixel PXL2 may be disposed in the display area DA. The first pixel PXL1 may include a 1-1th subpixel SPXL1-1, a 1-2th subpixel SPXL1-2, and a 1-3th subpixel SPXL1-3. The second pixel PXL2 may include a 2-1st subpixel SPXL2-1, a 2-2nd subpixel SPXL2-2, and a 2-3rd subpixel SPXL2-3.

[0073] Although not shown in detail in the drawings, the first pixel PXL1 and the second pixel PXL2 may be repeatedly arranged on a plane formed by the X-axis and the Y-axis in the display area DA. Each of the first pixel PXL1 and the second pixel PXL2 may be shown as including three sub-pixels, but is not necessarily limited thereto. Depending on the embodiment, each of the first pixel PXL1 and the second pixel PXL2 may include a plurality of sub-pixels, such as two sub-pixels or four sub-pixels.

[0074] exist Figure 3 , when viewed in the Z-axis direction (or in a plan view), each of the sub-pixels SPXL1-1, SPXL1-2, SPXL1-3, SPXL2-1, SPXL2-2, and SPXL2-3 may be illustrated as having a quadrilateral shape and having the same size as one another, but the embodiment is not limited thereto. For example, each of the sub-pixels SPXL1-1, SPXL1-2, SPXL1-3, SPXL2-1, SPXL2-2, and SPXL2-3 may be transformed into various shapes such as a polygonal shape with rounded corners, a circular shape, or an elliptical shape.

[0075] Hereinafter, when at least one subpixel is arbitrarily mentioned among individual subpixels such as the 1-1th subpixel SPXL1-1, the 1-2th subpixel SPXL1-2, the 1-3th subpixel SPXL1-3, the 2-1st subpixel SPXL2-1, the 2-2nd subpixel SPXL2-2 and the 2-3rd subpixel SPXL2-3, or when two or more types of subpixels are comprehensively mentioned, the at least one subpixel or the two or more types of subpixels are referred to as "pixel PXL" or "multiple pixels PXL".

[0076] The pixel PXL can be arranged in a stripe structure or However, the arrangement structure of the pixels PXL is not limited thereto, and the pixels PXL may be arranged in the display area DA in various structures and / or methods.

[0077] According to an embodiment, two or more types of pixels PXL emitting light of different colors may be provided in the display area DA. For example, in the display area DA, the 1-1 subpixel SPXL1-1 and / or the 2-1 subpixel SPXL2-1 emitting light of a first color, the 1-2 subpixel SPXL1-2 and / or the 2-2 subpixel SPXL2-2 emitting light of a second color, and the 1-3 subpixel SPXL1-3 and / or the 2-3 subpixel SPXL2-3 emitting light of a third color may be arranged.

[0078] At least two sub-pixels arranged adjacent to each other among the 1-1 to 1-3 sub-pixels SPXL1-1, SPXL1-2 and SPXL1-3 or at least two sub-pixels arranged adjacent to each other among the 2-1 to 2-3 sub-pixels SPXL2-1, SPXL2-2 and SPXL2-3 can constitute a first pixel PXL1 or a second pixel PXL2 that can emit light of various colors.

[0079] For example, the 1-1th sub-pixel SPXL1-1 and / or the 2-1th sub-pixel SPXL2-1 can be red pixels that emit red light, the 1-2th sub-pixel SPXL1-2 and / or the 2-2nd sub-pixel SPXL2-2 can be green pixels that emit green light, and the 1-3th sub-pixel SPXL1-3 and / or the 2-3rd sub-pixel SPXL2-3 can be blue pixels that emit blue light, but the present disclosure is not limited to this.

[0080] exist Figure 3 , the first pixel PXL1 is shown to include one 1-1th sub-pixel SPXL1-1, one 1-2th sub-pixel SPXL1-2, and one 1-3th sub-pixel SPXL1-3, but the present disclosure is not necessarily limited thereto. According to an embodiment, the first pixel PXL1 may include one 1-1th sub-pixel SPXL1-1, one 1-2th sub-pixel SPXL1-2, and two 1-3th sub-pixels SPXL1-3.

[0081] The 1-1th sub-pixel SPXL1-1, the 1-2th sub-pixel SPXL1-2, and the 1-3th sub-pixel SPXL1-3 may respectively include Figure 5A 1-1th sub-light emitting element SLD1-1, Figure 5A The 1st-2nd sub-light emitting element SLD1-2 and Figure 5A The first to third sub-light emitting elements SLD1-3 serve as light sources that emit light of the first color, light of the second color, and light of the third color, respectively. However, the color of light emitted by each pixel PXL may be changed differently.

[0082] A window WD for protecting the exposed surface of the display panel PNL may be provided on the display panel PNL. The window WD may protect the display panel PNL from external impacts and may provide an input surface and / or a display surface for the user. The window WD may be coupled to the display panel PNL using an optically transparent bonding member (or adhesive member) (not shown).

[0083] The window WD may have a multilayer structure selected from a glass substrate, a plastic film, and a plastic substrate. The multilayer structure may be formed by a continuous process or an adhesive process using an adhesive layer. The entire portion of the window WD may have flexibility.

[0084] Figure 4 It is an icon Figure 3 A plan view of an embodiment of two pixels adjacent to each other among the pixels shown in FIG. Figure 5A It is along Figure 4 A schematic cross-sectional view taken along line II' of FIG. Figure 5B yes Figure 5A An enlarged schematic cross-sectional view of region A.

[0085] exist Figure 4 In order to make the description clear and concise, the schematic diagram is shown. Figure 3 The first pixel PXL1 and the second pixel PXL2 may be sequentially arranged in the Y-axis direction, but this is for convenience of description, and the first pixel PXL1 and the second pixel PXL2 may be regularly arranged on a plane formed by the X-axis and the Y-axis together with the remaining pixels not shown.

[0086] The first pixel PXL1 may include a 1-1th subpixel SPXL1-1, a 1-2th subpixel SPXL1-2, and a 1-3th subpixel SPXL1-3 sequentially arranged in the X-axis direction. The second pixel PXL2 may also include a 2-1st subpixel SPXL2-1, a 2-2nd subpixel SPXL2-2, and a 2-3rd subpixel SPXL2-3 sequentially arranged in the X-axis direction.

[0087] The first pixel PXL1 and the second pixel PXL2 may include an emission area EMA and a non-emission area NEA surrounding the emission area EMA. The emission area EMA may be from Figure 5A A region at which light of the light emitting element layer EML can be emitted corresponds to each of the 1-1th to 1-3th sub-pixels SPXL1-1, SPXL1-2, and SPXL1-3 and the 2-1st to 2-3rd sub-pixels SPXL2-1, SPXL2-2, and SPXL2-3.

[0088] The emission zone EMA can be understood as Figure 5A Each of the openings OP of the pixel defining layer PDL corresponds to each of the 1-1th to 1-3th sub-pixels SPXL1-1, SPXL1-2, and SPXL1-3 and the 2-1st to 2-3rd sub-pixels SPXL2-1, SPXL2-2, and SPXL2-3.

[0089] Each of the first pixel PXL1 and the second pixel PXL2 may include a pixel circuit layer PCL, a display element layer DPL, and a thin film encapsulation layer TFE sequentially disposed on a substrate SUB. Figure 4 、 Figure 5A and Figure 5BDetailed structures of the 1-1th to 1-3th sub-pixels SPXL1-1, SPXL1-2, and SPXL1-3 will be described.

[0090] The substrate SUB may form a base surface. The substrate SUB may include a transparent insulating material and thus may transmit light. The substrate SUB may be a rigid substrate or a flexible substrate. The rigid substrate may be, for example, one of a common glass substrate, a quartz substrate, a glass ceramic substrate, and a crystallized glass substrate. The flexible substrate may be one of a film substrate and a plastic substrate including a polymer organic material. For example, the flexible substrate may include at least one of polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate, but is not necessarily limited thereto.

[0091] The pixel circuit layer PCL may include a pixel circuit and a sensor circuit provided on the substrate SUB.

[0092] The pixel circuit layer PCL may include a buffer layer BFL, a gate insulating layer GI, an interlayer insulating layer ILD, a passivation layer PSV, and a via layer VIA, which are sequentially stacked on one another on the substrate SUB.

[0093] The buffer layer BFL may be an inorganic insulating layer including an inorganic material. The buffer layer BFL may include silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ) and aluminum oxide (AlO x ) of at least one of the oxides of the substrate SUB. The buffer layer BFL may be provided as a single layer, but may also be provided as a multilayer of two or more layers. In the case where the buffer layer BFL is provided as a multilayer, each layer may be formed of the same material or may be formed of different materials. Depending on the material of the substrate SUB and process conditions, the buffer layer BFL may be omitted.

[0094] The transistor T may be disposed on the buffer layer BFL. The transistor T may include an active pattern ACT, a gate electrode GE, a first transistor electrode TE1, and a second transistor electrode TE2.

[0095] The active pattern ACT may be disposed on the buffer layer BFL. The active pattern ACT may include a polysilicon semiconductor. For example, the active pattern ACT may be formed by a low-temperature polysilicon process. However, the present disclosure is not necessarily limited thereto, and the active pattern ACT may be formed of an oxide semiconductor (e.g., a metal oxide semiconductor) or the like.

[0096] Each active pattern ACT may include a channel region, a first contact region extending from one end of the channel region, and a second contact region extending from the other end of the channel region. The channel region, the first contact region, and the second contact region may be formed from a semiconductor layer that may or may not be doped with impurities. As an example, the first contact region and the second contact region may be formed from a semiconductor layer doped with impurities, and the channel region may be formed from a semiconductor layer that may or may not be doped with impurities. As an impurity, for example, p-type impurities may be used, but is not limited thereto. One of the first contact region and the second contact region may be a source region, and the other may be a drain region.

[0097] The gate insulating layer GI may be disposed on the active pattern ACT. The gate insulating layer GI may be an inorganic layer (or inorganic insulating layer) including an inorganic material. The gate insulating layer GI may be provided as a single layer, but may also be provided as a multilayer of two or more layers.

[0098] The gate electrode GE may be disposed on the gate insulating layer GI. The gate electrode GE may overlap the channel region of the active pattern ACT. The gate electrode GE may be formed as a multilayer structure of two or more layers of copper (Cu), molybdenum (Mo), tungsten (W), aluminum neodymium (AlNd), titanium (Ti), aluminum (Al), silver (Ag), or a combination thereof.

[0099] An interlayer insulating layer ILD may be disposed on the gate electrode GE. The interlayer insulating layer ILD and the gate insulating layer GI may include the same material, or the interlayer insulating layer ILD may include one or more materials selected from the materials exemplified as constituent materials of the gate insulating layer GI.

[0100] The first transistor electrode TE1 and the second transistor electrode TE2 may be disposed on the interlayer insulating layer ILD.

[0101] The first transistor electrode TE1 of the transistor T may contact the first contact region of the active pattern ACT through a contact hole CH11 passing through the interlayer insulating layer ILD and the gate insulating layer GI. In the case where the first contact region is a source region, the first transistor electrode TE1 may be a source electrode.

[0102] The second transistor electrode TE2 of the transistor T may contact the second contact region of the active pattern ACT through a contact hole CH12 passing through the interlayer insulating layer ILD and the gate insulating layer GI. In the case where the second contact region is a drain region, the second transistor electrode TE2 may be a drain electrode.

[0103] The gate electrode GE and each of the first and second transistor electrodes TE1 and TE2 may include the same material, or each of the first and second transistor electrodes TE1 and TE2 may include one or more materials selected from the materials exemplified as constituent materials of the gate electrode GE.

[0104] A passivation layer PSV may be formed on the first transistor electrode TE1 and the second transistor electrode TE2. The passivation layer PSV (e.g., a protective layer) may be an inorganic layer (or an inorganic insulating layer) including an inorganic material or an organic layer (or an organic insulating layer) including an organic material. The inorganic layer may include, for example, silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ) and aluminum oxide (AlO x The organic layer may include, for example, at least one of an acrylic resin (polyacrylate resin), an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene ether resin, a polyphenylene sulfide resin, and a benzocyclobutene resin.

[0105] According to an embodiment, the passivation layer PSV and the interlayer insulating layer ILD may include the same material, but are not limited thereto. The passivation layer PSV may be provided as a single layer, but may also be provided as a multilayer of two or more layers.

[0106] The via layer VIA may be disposed on the passivation layer PSV. The via layer VIA and the passivation layer PSV may include the same material, or the via layer VIA may include one or more materials selected from the materials exemplified as constituent materials of the passivation layer PSV. In an embodiment, the via layer VIA may be an organic layer formed of an organic material.

[0107] The display element layer DPL may be disposed on the pixel circuit layer PCL.

[0108] The display element layer DPL may include a plurality of anode electrodes AE disposed on the pixel circuit layer PCL, and a plurality of light emitting element layers EML and a cathode electrode CE formed on each of the anode electrodes AE.

[0109] The anode electrode AE may include a first anode electrode AE1 corresponding to the first pixel PXL1 and a second anode electrode AE2 corresponding to the second pixel PXL2 .

[0110] The first anode electrode AE1 includes a 1-1th sub-anode electrode SAE1-1 corresponding to the 1-1th sub-pixel SPXL1-1, a 1-2th sub-anode electrode SAE1-2 corresponding to the 1-2nd sub-pixel SPXL1-2, and a 1-3rd sub-anode electrode SAE1-3 corresponding to the 1-3rd sub-pixel SPXL1-3.

[0111] Similarly, the second anode electrode AE2 includes a 2-1st sub-anode electrode SAE2-1 corresponding to the 2-1st sub-pixel SPXL2-1, a 2-2nd sub-anode electrode SAE2-2 corresponding to the 2-2nd sub-pixel SPXL2-2, and a 2-3rd sub-anode electrode SAE2-3 corresponding to the 2-3rd sub-pixel SPXL2-3.

[0112] In the following, when at least one sub-anode electrode is arbitrarily mentioned among the individual sub-anode electrodes such as the 1-1th sub-anode electrode SAE1-1, the 1-2th sub-anode electrode SAE1-2, the 1-3rd sub-anode electrode SAE1-3, the 2-1st sub-anode electrode SAE2-1, the 2-2nd sub-anode electrode SAE2-2 and the 2-3rd sub-anode electrode SAE2-3, or when two or more types of sub-anode electrodes are comprehensively mentioned, the at least one sub-anode electrode or the two or more types of sub-anode electrodes are referred to as "anode electrode AE" or "multiple anode electrodes AE".

[0113] The 1-1st, 1-2nd, and 1-3rd subanode electrodes SAE1-1, SAE1-2, and SAE1-3 may be respectively disposed in the emission areas EMA of the 1-1st, 1-2nd, and 1-3rd subpixels SPXL1-1, SPXL1-2, and SPXL1-3 and may be spaced apart from each other.

[0114] The 2-1st, 2-2nd, and 2-3rd subanode electrodes SAE2-1, SAE2-2, and SAE2-3 may be disposed in the emission areas EMA of the 2-1st, 2-2nd, and 2-3rd subpixels SPXL2-1, SPXL2-2, and SPXL2-3, respectively, and may be spaced apart from each other.

[0115] The 1-1st sub-anode electrode SAE1-1, the 1-2nd sub-anode electrode SAE1-2 and the 1-3rd sub-anode electrode SAE1-3 may be electrically connected to the first transistor electrodes TE1 of the 1-1st sub-pixel SPXL1-1, the 1-2nd sub-pixel SPXL1-2 and the 1-3rd sub-pixel SPXL1-3, respectively, through contact holes CH2 passing through the via layer VIA and the passivation layer PSV.

[0116] A pixel defining layer (PDL) may be disposed on the anode electrode AE. The pixel defining layer (PDL) may define (or partition) the emission area (EMA) of each pixel (PXL). The pixel defining layer (PDL) may include an opening (OP) that partially exposes the anode electrode (AE) of each pixel (PXL). The opening (OP) of the pixel defining layer (PDL) may overlap the emission area (EMA) of each pixel (PXL).

[0117] The pixel defining layer (PDL) may be an organic insulating layer formed of an organic material, such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, or a combination thereof.

[0118] According to an embodiment, the pixel defining layer PDL may include a light absorbing material, or may be coated with a light absorbing material for absorbing input light. For example, the pixel defining layer PDL may include a carbon-based black pigment. However, the present disclosure is not necessarily limited thereto, and the pixel defining layer PDL may include an opaque metal material such as chromium (Cr), molybdenum (Mo), an alloy of molybdenum (Mo) and titanium (Ti) (MoTi), tungsten (W), vanadium (V), niobium (Nb), tantalum (Ta), manganese (Mn), cobalt (Co), nickel (Ni), or a combination thereof.

[0119] The light emitting element layer EML of each pixel PXL may be disposed on the corresponding anode electrode AE exposed by the pixel defining layer PDL.

[0120] The light emitting element layer EML may include a first light emitting element layer EML1 corresponding to the first anode electrode AE1 and a second light emitting element layer corresponding to the second anode electrode AE2. As an example, the first light emitting element layer EML1 and the second light emitting element layer may be front surface emission organic light emitting element layers.

[0121] Specifically, the first light emitting element layer EML1 may include a 1-1th sub-light emitting element layer SEML1-1 corresponding to the 1-1th sub-anode electrode SAE1-1, a 1-2th sub-light emitting element layer SEML1-2 corresponding to the 1-2nd sub-anode electrode SAE1-2, and a 1-3th sub-light emitting element layer SEML1-3 corresponding to the 1-3rd sub-anode electrode SAE1-3.

[0122] Similarly, the second light-emitting element layer may also include the 2-1st sub-light-emitting element layer corresponding to the 2-1st sub-anode electrode SAE2-1, the 2-2nd sub-light-emitting element layer corresponding to the 2-2nd sub-anode electrode SAE2-2, and the 2-3rd sub-light-emitting element layer corresponding to the 2-3rd sub-anode electrode SAE2-3.

[0123] The cathode electrode CE may be disposed on the light emitting element layer EML. The cathode electrode CE may be formed throughout the first pixel PXL1 or the second pixel PXL2. As an example, the cathode electrode CE may be provided as a common electrode for the 1-1 sub-pixel SPXL1-1, the 1-2 sub-pixel SPXL1-2, and the 1-3 sub-pixel SPXL1-3, but is not limited thereto.

[0124] The cathode electrode CE may be formed of a metal layer of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), alloys thereof, or a combination thereof, and / or a transparent conductive layer of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin zinc oxide (ITZO), or a combination thereof. According to an embodiment, the cathode electrode CE may be formed as a multilayer including two or more thin metal layers, for example, a triple layer of ITO / Ag / ITO.

[0125] Hereinafter, each anode electrode AE and the light-emitting element layer EML and cathode electrode CE corresponding to the corresponding anode electrode AE are collectively referred to as a light-emitting element LD, the 1-1 to 1-3 sub-light-emitting elements SLD1-1, SLD1-2 and SLD1-3 corresponding to the first pixel PXL1 are collectively referred to as the first light-emitting element LD1, and the 2-1 to 2-3 sub-light-emitting elements (not shown) corresponding to the second pixel PXL2 are collectively referred to as the second light-emitting element.

[0126] When the light-emitting element LD is a front-surface emission type, the anode electrode AE may be a reflective electrode, and the cathode electrode CE may be a transmissive electrode or a semi-transmissive electrode. When the light-emitting element LD is a rear-surface emission type, the anode electrode AE may be a transmissive electrode or a semi-transmissive electrode, and the cathode electrode CE may be a reflective electrode. However, for ease of description, the present disclosure will be described based on the case where the light-emitting element LD is a front-surface emission type, and therefore the anode electrode AE may be a reflective electrode and the cathode electrode CE may be a semi-transmissive electrode.

[0127] The thin film encapsulation layer TFE may be provided on the display element layer DPL. The thin film encapsulation layer TFE may have a single-layer structure or a multi-layer structure. The thin film encapsulation layer TFE may include a plurality of insulating layers covering the light emitting element LD. The thin film encapsulation layer TFE may include at least one inorganic layer and at least one organic layer. For example, the thin film encapsulation layer TFE may have a structure in which the inorganic layer and the organic layer may be alternately stacked with each other. According to an embodiment, the thin film encapsulation layer TFE may be an encapsulation substrate provided on the light emitting element LD and bonded to the substrate SUB through a sealant. The thin film encapsulation layer TFE may cover the display element layer DPL and the pixel circuit layer PCL to protect the light emitting element LD from external moisture, heat, impact, and the like.

[0128] In order to improve the encapsulation efficiency of the thin film encapsulation layer TFE, the thin film encapsulation layer TFE may further include aluminum oxide (AlO x The thin film containing aluminum oxide may be positioned on the upper surface of the encapsulation layer TFE facing the window WD and / or the lower surface of the thin film encapsulation layer TFE facing the display element layer DPL.

[0129] The thin film containing aluminum oxide can be formed by atomic layer deposition (ALD), but is not necessarily limited thereto. According to an embodiment, the thin film encapsulation layer TFE can further include a thin film formed of one of various materials suitable for improving encapsulation efficiency, and can be formed in a method suitable for the material of the thin film.

[0130] The light blocking layer LBP may be disposed on the thin film encapsulation layer TFE. The light blocking layer LBP may include an opening OP' that may overlap with the light emitting element LD. As an example, the light blocking layer LBP may be disposed to overlap with the non-emission area NEMA surrounding the emission area EMA.

[0131] The light blocking layer LBP may include a light blocking material to prevent light leakage defects and color mixing defects. As an example, the light blocking layer LBP may include a black matrix, but is not necessarily limited thereto. According to an embodiment, the light blocking layer LBP may include carbon black (CB) and / or titanium black (TiBK).

[0132] The color filter layer CFL may be disposed on the light blocking layer LBP. The color filter layer CFL may include a first color filter layer CFL1 disposed in the first pixel PXL1 and a second color filter layer (not shown) disposed in the second pixel PXL2.

[0133] Specifically, the first color filter layer CFL1 may include sub-color filters SCF1-1, SCF1-2, and SCF1-3 that match the color of each pixel PXL. Since the 1-1 to 1-3 sub-color filters SCF1-1, SCF1-2, and SCF1-3 that match the colors of the corresponding 1-1 to 1-3 sub-pixels SPXL1-1, SPXL1-2, and SPXL1-3 can be provided, a full-color image can be displayed.

[0134] For example, the first color filter layer CFL1 may include a 1-1 sub-color filter SCF1-1 disposed in the 1-1 sub-pixel SPXL1-1 and selectively transmitting light emitted from the 1-1 sub-pixel SPXL1-1, a 1-2 sub-color filter SCF1-2 disposed in the 1-2 sub-pixel SPXL1-2 and selectively transmitting light emitted from the 1-2 sub-pixel SPXL1-2, and a 1-3 sub-color filter SCF1-3 disposed in the 1-3 sub-pixel SPXL1-3 and selectively transmitting light emitted from the 1-3 sub-pixel SPXL1-3.

[0135] In an embodiment, the 1-1 to 1-3 sub-color filters SCF1-1, SCF1-2, and SCF1-3 may be a red filter, a green filter, and a blue filter, respectively, but are not necessarily limited thereto. Hereinafter, when any sub-color filter may be mentioned among the 1-1 sub-color filter SCF1-1, the 1-2 sub-color filter SCF1-2, and the 1-3 sub-color filter SCF1-3, or two or more types of sub-color filters may be mentioned comprehensively, any sub-color filter or two or more types of sub-color filters may be referred to as “color filter CFL1” or “color filters CFL1”.

[0136] The 1-1th sub-color filter SCF1-1 may include a color filter material that selectively transmits light of the first color (or red). For example, if the 1-1th sub-pixel SPXL1-1 is a red pixel, the 1-1th sub-color filter SCF1-1 may include a red color filter material.

[0137] The 1-2nd sub-color filter SCF1-2 may include a color filter material that selectively transmits light of the second color (or green). For example, if the 1-2nd sub-pixel SPXL1-2 is a green pixel, the 1-2nd sub-color filter SCF1-2 may include a green color filter material.

[0138] The 1-3rd sub-color filter SCF1-3 may include a color filter material that selectively transmits light of a third color (or blue). For example, if the 1-3rd sub-pixel SPXL1-3 is a blue pixel, the 1-3rd sub-color filter SCF1-3 may include a blue color filter material.

[0139] A window WD may be provided on the color filter layer CFL. The window WD may protect a lower member from external impact and provide an input surface and / or a display surface for a user.

[0140] Hereinafter, the via layer VIA will be described in more detail.

[0141] Reference together Figure 4 、 Figure 5A and Figure 5B The via layer VIA may be interposed between the passivation layer PSV of the pixel circuit layer PCL and the display element layer DPL. A plurality of slit patterns SLP overlapping each of the anode electrodes AE provided in the light emitting element LD may be formed on the upper surface of the via layer VIA facing the display element layer DPL.

[0142] The slit pattern SLP may include a first slit pattern SLP1 formed on an upper surface of the via layer VIA overlapping the first anode electrode AE1 , and a second slit pattern SLP2 formed on an upper surface of the via layer VIA overlapping the second anode electrode AE2 .

[0143] The first and second slit patterns SLP1 and SLP2 may be formed to be different from each other in at least one of shape, size, and position.

[0144] Specifically, hereinafter, “shape” may refer to the overall shape of a specific component to which it refers, and when a specific component is compared with another component, even if the size or position may be different from each other, it is expressed as “the same shape” if the overall shape of each compared component is substantially the same.

[0145] Here, “substantially the same” may include not only being completely identical but also comprehensively meaning being similar or close within a range allowing a certain degree of error due to process conditions or material properties, etc.

[0146] The word "size" may refer to the total area occupied by the specific component to which it refers, and when comparing a specific component with another component, even though the shapes or positions may be different from each other, it is expressed as "the same size" if the total area of each compared component is substantially the same.

[0147] The word "position" may refer to both the center of a specific component to which it refers and the degree of rotation relative to the center. When a specific component is compared with another component, even if the shapes or sizes may be different from each other, if the center of each compared component and the degree of rotation relative to the center are substantially the same, it is expressed as "the same position." If the centers of the compared components are substantially the same but the degrees of rotation relative to the center are different, the corresponding components are expressed as "having different positions."

[0148] As an example, Figure 4 The diagram illustrates a case where the shapes of the first slit pattern SLP1 and the second slit pattern SLP2 may be different from each other. For example, the first slit pattern SLP1 may have a rectangular shape with rounded corners, and the second slit pattern SLP2 may have an elliptical shape, but are not necessarily limited thereto. According to embodiments, the first slit pattern SLP1 and the second slit pattern SLP2 may have various shapes such as a circular shape, a polygonal shape (e.g., a square shape), and an elliptical shape.

[0149] The slit pattern SLP may have a concave schematic cross-section, such as a shape that is recessed at a depth (e.g., a predetermined depth or a selectable depth) in a direction from the upper surface of the through-hole layer VIA to the substrate SUB. Accordingly, the lower surface of the anode electrode AE that may contact the slit pattern SLP may have a shape complementary to the slit pattern SLP. For example, the portion of the anode electrode AE formed on the through-hole layer VIA that may contact the slit pattern SLP may also have the same concave schematic cross-section as the slit pattern SLP.

[0150] The portion where the anode electrode AE and the slit pattern SLP overlap each other may preferably be positioned in the emission area EMA defined in each pixel PXL, but is not necessarily limited thereto. According to an embodiment, the portion where the anode electrode AE and the slit pattern SLP overlap each other may extend to the non-emission area NEMA.

[0151] The anode electrode AE may reflect light emitted from the light emitting element layer EML, and part of the light reflected from the anode electrode AE that may not be emitted to the outside through the cathode electrode CE may be reflected again from the cathode electrode CE and may be directed to the anode electrode AE.

[0152] As described above, light emitted from the light-emitting element layer EML can be continuously reflected between the anode electrode AE and the cathode electrode CE, and thus a light resonance phenomenon can occur. At this time, due to the concave schematic cross-sectional shape of the anode electrode AE, the light resonating between the anode electrode AE and the cathode electrode CE can have the same or similar wavelength, but the light can be emitted to the outside in different directions.

[0153] For example, when the wavelength of light emitted from the light emitting element LD in the Z-axis direction (for example, the front surface of the display panel from the user's perspective) and the wavelength of light emitted in a direction crossing the Z-axis direction (for example, the side surface from the user's perspective) have the same wavelength, since a user who sees the light emitted from the light emitting element LD from the outside can see the same light from the front surface and the side surface of the display panel PNL, an effect of improving visibility can be expected.

[0154] Since the first and second pixels PXL1 and PXL2 may be disposed adjacent to each other, a user may view a diffraction pattern when light of the same wavelength is emitted from the first and second pixels PXL1 and PXL2 in the same direction in an overlapping manner.

[0155] In the case where the first and second slit patterns SLP1 and SLP2 have the same shape, size, and position, lights of the same wavelength reflected from the first and second anode electrodes AE1 and AE2 may be radiated in the same direction, and thus a user may see a diffraction pattern.

[0156] According to the embodiment, since the first and second slit patterns SLP1 and SLP2 have different shapes, light of the same wavelength reflected from the first and second anode electrodes AE1 and AE2 can be radiated in different directions. From the user's perspective, at a specific location, the wavelength of light seen from the first pixel PXL1 and the wavelength of light seen from the second pixel PXL2 can be different from each other, and thus less diffraction patterns can be seen, thereby improving the visibility of the user when viewing the display panel PNL.

[0157] The first slit pattern SLP1 may include a 1-1th sub-slit pattern SSLP1-1 formed on the upper surface of the through-hole layer VIA overlapping with the 1-1th sub-anode electrode SAE1-1, a 1-2th sub-slit pattern SSLP1-2 formed on the upper surface of the through-hole layer VIA overlapping with the 1-2nd sub-anode electrode SAE1-2, and a 1-3rd sub-slit pattern SSLP1-3 formed on the upper surface of the through-hole layer VIA overlapping with the 1-3rd sub-anode electrode SAE1-3.

[0158] Similarly, the second slit pattern SLP2 may include a 2-1st sub-slit pattern SSLP2-1 formed on the upper surface of the through-hole layer VIA overlapping with the 2-1st sub-anode electrode SAE2-1, a 2-2nd sub-slit pattern SSLP2-2 formed on the upper surface of the through-hole layer VIA overlapping with the 2-2nd sub-anode electrode SAE2-2, and a 2-3rd sub-slit pattern SSLP2-3 formed on the upper surface of the through-hole layer VIA overlapping with the 2-3rd sub-anode electrode SAE2-3.

[0159] Hereinafter, when at least one sub-slit pattern is arbitrarily mentioned among each sub-slit pattern among the 1-1th sub-slit pattern SSLP1-1, the 1-2nd sub-slit pattern SSLP1-2, the 1-3rd sub-slit pattern SSLP1-3, the 2-1st sub-slit pattern SSLP2-1, the 2-2nd sub-slit pattern SSLP2-2 and the 2-3rd sub-slit pattern SSLP2-3, or when two or more types of sub-slit patterns are comprehensively mentioned, the at least one sub-slit pattern or the two or more types of sub-slit patterns are referred to as "slit pattern SLP" or "multiple slit patterns SLP".

[0160] Reference again Figure 4 , the 1-1th to 1-3th sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 may have substantially the same shape and size and may be formed at the same position. Similarly, the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 may also have substantially the same shape and size and may have the same position.

[0161] As described above, the slit pattern SLP may have the same shape, size, and position in the same pixel PXL (eg, the first pixel PXL1 or the second pixel PXL2 ), and this may be to set light characteristics achieved by the pixel PXL as uniformly as possible.

[0162] Figure 6 It is an icon Figure 4A plan view of an embodiment of the first and second slit patterns shown in FIG.

[0163] refer to Figure 6 The shapes of the first slit pattern SLP1 and the second slit pattern SLP2 may be different from each other, except that the shapes of the first slit pattern SLP1 and the second slit pattern SLP2 may be a quadrilateral with rounded corners and an elliptical shape, respectively. The 1-1 to 1-3 sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 may have different sizes, and the 2-1 to 2-3 sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 may also have different sizes.

[0164] However, here, the 1-1th to 1-3th sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 may have the same position, and the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 may also have the same position.

[0165] Although the sizes of the 1-1st sub-slit pattern SSLP1-1 and the 1-2nd sub-slit pattern SSLP1-2 and the 2-1st sub-slit pattern SSLP2-1 and the 2-2nd sub-slit pattern SSLP2-2 may be different, since the shapes of the 1-1st sub-slit pattern SSLP1-1 and the 2-1st sub-slit pattern SSLP2-1, the 1-2nd sub-slit pattern SSLP1-2 and the 2-2nd sub-slit pattern SSLP2-2, and the 1-3rd sub-slit pattern SSLP1-3 and the 2-3rd sub-slit pattern SSLP2-3 may be different, even if light of the same wavelength may be emitted from adjacent pixels (for example, the first pixel PXL1 and the second pixel PXL2), the light may be radiated in different directions.

[0166] Therefore, even with the above structure, from the user's perspective, since the wavelength of light seen from the display panel PNL at a specific position can be different, fewer diffraction patterns can be seen, and thus the visibility of the user when viewing the display panel PNL can be improved.

[0167] In the following, reference Figure 7 A case where both the first and second slit patterns SLP1 and SLP2 have an elliptical shape is described in more detail.

[0168] Figure 7 1 is a plan view illustrating an embodiment of a 1-1th sub-slit pattern and a 2-1th sub-slit pattern.

[0169] refer to Figure 7, the 1-1th sub-slit pattern SSLP1-1 and the 2-1st sub-slit pattern SSLP2-1 may both have an elliptical shape. Here, the 1-1th sub-slit pattern SSLP1-1 may represent the first slit pattern SLP1, and the 2-1st sub-slit pattern SSLP2-1 may represent the second slit pattern SLP2. Although not shown, the 1-2nd sub-slit pattern SSLP1-2, the 1-3rd sub-slit pattern SSLP1-3, the 2-2nd sub-slit pattern SSLP2-2, and the 2-3rd sub-slit pattern SSLP2-3 may also have an elliptical shape similar to those of the 1-1st sub-slit pattern SSLP1-1 and the 2-1st sub-slit pattern SSLP2-1.

[0170] Therefore, hereinafter, for convenience of description, the 1-1th sub-slit pattern SSLP1 - 1 is referred to as a first slit pattern SLP1 , and the 2-1th sub-slit pattern SSLP2 - 1 is referred to as a second slit pattern SLP2 .

[0171] The first slit pattern SLP1 may have a first center C1 at a viewpoint where the first pixel PXL1 is viewed along the Z-axis direction, and the second slit pattern SLP2 may have a second center C2 at a viewpoint where the second pixel PXL2 is viewed along the Z-axis direction. At this time, the first center C1 and the second center C2 may be formed at substantially the same positions in the first pixel PXL1 and the second pixel PXL2 in regions respectively occupied by the 1-1th sub-anode electrode SAE1-1 and the 2-1st sub-anode electrode SAE2-1.

[0172] The first slit pattern SLP1 may include a 1-1 groove CLT1-1, a 1-2 groove CLT1-2, a 1-3 groove CLT1-3, and a 1-4 groove CLT1-4 having a closed loop shape, which are sequentially formed in a radial direction relative to the first center C1 and spaced apart from each other. The second slit pattern SLP2 may also include a 2-1 groove CLT2-1, a 2-2 groove CLT2-2, a 2-3 groove CLT2-3, and a 2-4 groove CLT2-4 having a closed loop shape, which are sequentially formed in a radial direction relative to the second center C2 and spaced apart from each other.

[0173] As described above, each of the first and second slit patterns SLP1 and SLP2 may have four grooves, but the number thereof is not necessarily limited thereto. According to an embodiment, each of the first and second slit patterns SLP1 and SLP2 may have a plurality of grooves other than four grooves.

[0174] More specifically, the first area A1 surrounded by the 1-1th trench CLT1 - 1 in the first slit pattern SLP1 and the second area A2 surrounded by the 2-1th trench CLT2 - 1 in the second slit pattern SLP2 may have different areas.

[0175] Each of the 1-1 to 1-4 grooves CLT1-1, CLT1-2, CLT1-3, and CLT1-4 may have a width w1 of approximately 1.5 μm or less in a radial direction relative to the first center C1. Each of the 2-1 to 2-4 grooves CLT2-1, CLT2-2, CLT2-3, and CLT2-4 may have a width w2 of approximately 1.5 μm or less in a radial direction relative to the second center C2.

[0176] The grooves, for example, the 1-1 groove CLT1-1 and the 1-2 groove CLT1-2, the 1-2 groove CLT1-2 and the 1-3 groove CLT1-3, or the 1-3 groove CLT1-3 and the 1-4 groove CLT1-4 may be spaced apart from each other by a distance d1 of about 1.5 μm or less in a radial direction relative to the first center C1.

[0177] The 2-1st trench CLT2-1 and the 2-2nd trench CLT2-2, the 2-2nd trench CLT2-2 and the 2-3rd trench CLT2-3, or the 2-3rd trench CLT2-3 and the 2-4th trench CLT2-4 may also be spaced apart from each other by a distance d2 of approximately 1.5 μm or less in the radial direction relative to the second center C2.

[0178] When the spacing distance farthest from the 1-1 groove CLT1-1 based on the first center C1 is defined as the first long radius RA1 and the spacing distance farthest from the 2-1 groove CLT2-1 based on the second center C2 is defined as the second long radius RA2, the virtual line L1 extending on the first long radius RA1 and the virtual line L2 extending on the second long radius RA2 may intersect each other.

[0179] Here, the statement “the virtual line L1 extending on the first long radius RA1 and the virtual line L2 extending on the second long radius RA2 intersect each other” means that the angle θ1 formed by the first long radius RA1 and the X-axis and the angle θ2 formed by the second long radius RA2 and the X-axis may be different from each other, and means that the degrees of rotation of the first slit pattern SLP1 and the second slit pattern SLP2 about the first center C1 and the second center C2, respectively, may be different from each other.

[0180] In addition, although the first center C1 and the second center C2 can be formed at substantially the same position in the 1-1 sub-anode electrode SAE1-1 and the 2-1 sub-anode electrode SAE2-1, respectively, since the degrees of rotation of the first slit pattern SLP1 and the second slit pattern SLP2 about the first center C1 and the second center C2, respectively, can be different from each other, the positions of the first slit pattern SLP1 and the second slit pattern SLP2 can be different.

[0181] Therefore, even with this structure, although light of the same wavelength may be radiated from each of the first pixel PXL1 and the second pixel PXL2, since the light can be radiated in different directions, from the user's perspective, the wavelengths of light seen from the display panel PNL can be different from each other, and thus fewer diffraction patterns can be seen, thereby improving visibility when the user views the display panel PNL.

[0182] When the first slit pattern SLP1 and / or the second slit pattern SLP2 are formed in an elliptical shape, it may be desirable that the eccentricity of the corresponding ellipse may be approximately 0.7 or less. More specifically, when the closest spacing distance from the 1-1 groove CLT1-1 based on the first center C1 is defined as a first short radius RB1 and the closest spacing distance from the 2-1 groove CLT2-1 based on the second center C2 is defined as a second short radius RB2, the following formula may be satisfied.

[0183] [Formula 1](1-(RB1) 2 / (RA1) 2 ) 1 / 2 ≤0.7

[0184] [Formula 2](1-(RB2) 2 / (RA2) 2 ) 1 / 2 ≤0.7

[0185] In the following, reference Figure 8 and Figure 9 An embodiment is described in which the arrangement and structure of sub-pixels in the first pixel PXL1 and the second pixel PXL2 may be different from those described above.

[0186] Figure 8 It is an icon Figure 3 A plan view of an embodiment of two pixels adjacent to each other among the pixels, and Figure 9 It is an icon Figure 8 A plan view of an embodiment of the first and second slit patterns shown in FIG.

[0187] refer to Figure 8 and Figure 9The first pixel PXL1 may include a 1-1th subpixel SPXL1-1, a 1-2th subpixel SPXL1-2, and a 1-3th subpixel SPXL1-3. The second pixel PXL2 may include a 2-1st subpixel SPXL2-1, a 2-2nd subpixel SPXL2-2, and a 2-3rd subpixel SPXL2-3.

[0188] The 1-1th sub-pixel SPXL1-1 and the 1-2th sub-pixel SPXL1-2 can be arranged sequentially in the Y-axis direction, and the 1-3th sub-pixel SPXL1-3 can be arranged sequentially in the X-axis direction relative to the 1-1th sub-pixel SPXL1-1 and the 1-2 sub-pixel SPXL1-2 to be adjacent to both the 1-1th sub-pixel SPXL1-1 and the 1-2 sub-pixel SPXL1-2.

[0189] The 2-1st sub-pixel SPXL2-1 and the 2-2nd sub-pixel SPXL2-2 can also be arranged sequentially in the Y-axis direction, and the 2-3rd sub-pixel SPXL2-3 can be arranged sequentially in the X-axis direction relative to the 2-1st sub-pixel SPXL2-1 and the 2-2nd sub-pixel SPXL2-2 to be adjacent to both the 2-1st sub-pixel SPXL2-1 and the 2-2nd sub-pixel SPXL2-2.

[0190] The first anode electrode AE1 may include a 1-1th sub-anode electrode SAE1-1 corresponding to the 1-1th sub-pixel SPXL1-1, a 1-2th sub-anode electrode SAE1-2 corresponding to the 1-2nd sub-pixel SPXL1-2, and a 1-3rd sub-anode electrode SAE1-3 corresponding to the 1-3rd sub-pixel SPXL1-3.

[0191] The 1-1st to 1-3rd sub-anode electrodes SAE1-1, SAE1-2, and SAE1-3 may be arranged on a plane formed by the X-axis and the Y-axis in the same structure in which each of the 1-1st to 1-3rd sub-pixels SPXL1-1, SPXL1-2, and SPXL1-3 may be arranged in the X-axis and Y-axis directions.

[0192] The 1-1st sub-anode electrode SAE1-1 and the 1-2nd sub-anode electrode SAE1-2 may be formed one after another in the 1-1st sub-pixel SPXL1-1 and the 1-2nd sub-pixel SPXL1-2, respectively. In the case of the 1-3rd sub-anode electrode SAE1-3, two 1-3rd sub-anode electrodes SAE1-3 may be formed in the 1-3rd sub-pixel SPXL1-3 and arranged sequentially in the Y-axis direction, but the present disclosure is not necessarily limited thereto. According to an embodiment, at least one 1-1st sub-anode electrode SAE1-1, at least one 1-2nd sub-anode electrode SAE1-2, and at least one 1-3rd sub-anode electrode SAE1-3 may be formed in the 1-1st to 1-3rd sub-pixels SPXL1-1, SPXL1-2, and SPXL1-3, respectively.

[0193] The second anode electrode AE2 may also include a 2-1st sub-anode electrode SAE2-1 corresponding to the 2-1st sub-pixel SPXL2-1, a 2-2nd sub-anode electrode SAE2-2 corresponding to the 2-2nd sub-pixel SPXL2-2, and a 2-3rd sub-anode electrode SAE2-3 corresponding to the 2-3rd sub-pixel SPXL2-3.

[0194] The 2-1st to 2-3rd sub-anode electrodes SAE2-1, SAE2-2 and SAE2-3 may be arranged on a plane formed by the X-axis and the Y-axis in the same structure in which each of the 2-1st to 2-3rd sub-pixels SPXL2-1, SPXL2-2 and SPXL2-3 may be arranged in the X-axis and Y-axis directions.

[0195] The 2-1st sub-anode electrode SAE2-1 and the 2-2nd sub-anode electrode SAE2-2 may be formed one after another in the 2-1st sub-pixel SPXL2-1 and the 2-2nd sub-pixel SPXL2-2, respectively. In the case of the 2-3rd sub-anode electrode SAE2-3, two 2-3rd sub-anode electrodes SAE2-3 may be formed in the 2-3rd sub-pixel SPXL2-3 and arranged sequentially in the Y-axis direction, but the present disclosure is not necessarily limited thereto. According to an embodiment, at least one 2-1st sub-anode electrode SAE2-1, at least one 2-2nd sub-anode electrode SAE2-2, and at least one 2-3rd sub-anode electrode SAE2-3 may be formed in the 2-1st to 2-3rd sub-pixels SPXL2-1, SPXL2-2, and SPXL2-3, respectively.

[0196] The first slit pattern SLP1 may include a 1-1th sub-slit pattern SSLP1-1 corresponding to a 1-1th sub-anode electrode SAE1-1, a 1-2nd sub-slit pattern SSLP1-2 corresponding to a 1-2nd sub-anode electrode SAE1-2, and a 1-3rd sub-slit pattern SSLP1-3 corresponding to a 1-3rd sub-anode electrode SAE1-3.

[0197] The 1-1st to 1-3rd sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 may be arranged on a plane formed by the X-axis and the Y-axis in the same structure in which each of the 1-1st to 1-3rd sub-anode electrodes SAE1-1, SAE1-2, and SAE1-3 may be arranged in the X-axis and Y-axis directions.

[0198] The 1-1st sub-slit pattern SSLP1-1 and the 1-2nd sub-slit pattern SSLP1-2 may have a one-to-one correspondence with the 1-1st sub-anode electrode SAE1-1 and the 1-2nd sub-anode electrode SAE1-2 in the 1-1st sub-pixel SPXL1-1 and the 1-2nd sub-pixel SPXL1-2, respectively. In the case of the 1-3rd sub-slit pattern SSLP1-3, a total of two 1-3rd sub-slit patterns SSLP1-3 may be formed in the 1-3rd sub-pixel PXL1-3 and may have a one-to-one correspondence with the 1-3rd sub-anode electrodes SAE1-3 sequentially arranged in the Y-axis direction, but the present disclosure is not necessarily limited thereto. According to an embodiment, at least one 1-1th sub-slit pattern SSLP1-1, at least one 1-2th sub-slit pattern SSLP1-2, and at least one 1-3th sub-slit pattern SSLP1-3 may be formed in the 1-1th to 1-3th sub-anode electrodes SAE1-1, SAE1-2, and SAE1-3, respectively.

[0199] The second slit pattern SLP2 may include a 2-1st sub-slit pattern SSLP2-1 corresponding to the 2-1st sub-anode electrode SAE2-1, a 2-2nd sub-slit pattern SSLP2-2 corresponding to the 2-2nd sub-anode electrode SAE2-2, and a 2-3rd sub-slit pattern SSLP2-3 corresponding to the 2-3rd sub-anode electrode SAE2-3.

[0200] The 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2 and SSLP2-3 may be arranged on a plane formed by the X-axis and the Y-axis in the same manner as a structure in which each of the 2-1st to 2-3rd sub-anode electrodes SAE2-1, SAE2-2 and SAE2-3 may be arranged in the X-axis and Y-axis directions.

[0201] The 2-1st sub-slit pattern SSLP2-1 and the 2-2nd sub-slit pattern SSLP2-2 may be formed one after another in the 2-1st sub-anode electrode SAE2-1 and the 2-2nd sub-anode electrode SAE2-2, respectively. In the case of the 2-3rd sub-slit pattern SSLP2-3, a total of two 2-3rd sub-slit patterns SSLP2-3 may be formed one after another in the 2-3rd sub-anode electrode SAE2-3 and arranged sequentially in the Y-axis direction, but the present disclosure is not necessarily limited thereto. According to an embodiment, at least one 2-1st sub-slit pattern SSLP2-1, at least one 2-2nd sub-slit pattern SSLP2-2, and at least one 2-3rd sub-slit pattern SSLP2-3 may be formed in the 2-1st to 2-3rd sub-anode electrodes SAE2-1, SAE2-2, and SAE2-3, respectively.

[0202] Specifically, Figure 8 and Figure 9 The case where the 1-1st to 1-3rd sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 and the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 all have an elliptical shape is illustrated. Figure 8 and Figure 9 The variations of the slit pattern SLP shown in are compared and described.

[0203] Specifically, Figure 8 A case is illustrated in which positions of respective sub-slit patterns formed in the sub-pixel SPXL at the same position in each of the first pixel PXL1 and the second pixel PXL2 adjacent to each other may be different from each other. Figure 9 A case is illustrated in which sizes of respective sub-slit patterns formed in sub-pixels at the same position in each of the first pixel PXL1 and the second pixel PXL2 adjacent to each other may be different from each other.

[0204] First, refer to Figure 8 , the 1-1 to 1-3 sub-slit patterns SSLP1-1, SSLP1-2 and SSLP1-3 may have the same elliptical shape as described above, and may have substantially the same center C1-1, C1-2 and C1-3 in the 1-1 to 1-3 sub-anode electrodes SAE1-1, SAE1-2 and SAE1-3 at which the corresponding 1-1 to 1-3 sub-slit patterns SSLP1-1, SSLP1-2 and SSLP1-3 may be positioned.

[0205] The 1-1th sub-slit pattern SSLP1-1 and the 1-2th sub-slit pattern SSLP1-2 may have substantially the same size, and the 1-3th sub-slit pattern SSLP1-3 may have a size different from those of the 1-1th sub-slit pattern SSLP1-1 and the 1-2nd sub-slit pattern SSLP1-2, but this is an example and is not necessarily limited thereto. According to an embodiment, the 1-3th sub-slit pattern SSLP1-3 may have a size substantially the same as those of the 1-1st sub-slit pattern SSLP1-1 and the 1-2nd sub-slit pattern SSLP1-2.

[0206] The degrees to which the 1-1st to 1-3rd sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 are rotated about the corresponding centers C1-1, C1-2, and C1-3 may all be substantially the same. For example, since the degrees to which the corresponding centers C1-1, C1-2, and C1-3 and the 1-1st to 1-3rd sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 are rotated about the corresponding centers C1-1, C1-2, and C1-3 may all be substantially the same, the 1-1st to 1-3rd sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 may have substantially the same positions.

[0207] So, to summarize the above, Figure 8 The 1-1 to 1-3 sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 shown in FIG may all be the first slit pattern SLP1 formed in the same pixel (e.g., the first pixel PXL1) and may have substantially the same shape and position. Although the size of the 1-3 sub-slit pattern SSLP1-3 may be different from the size of the 1-1 sub-slit pattern SSLP1-1 and the 1-2 sub-slit pattern SSLP1-2, this is only an example and may have substantially the same size.

[0208] Similarly, the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2 and SSLP2-3 can all have the same elliptical shape as described above, and can have substantially the same center C2-1, C2-2 and C2-3 in the 2-1st to 2-3rd sub-anode electrodes SAE2-1, SAE2-2 and SAE2-3 where the corresponding 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2 and SSLP2-3 are positioned.

[0209] The 2-1st sub-slit pattern SSLP2-1 and the 2-2nd sub-slit pattern SSLP2-2 may have substantially the same size, and the 2-3rd sub-slit pattern SSLP2-3 may have a size different from those of the 2-1st sub-slit pattern SSLP2-1 and the 2-2nd sub-slit pattern SSLP2-2, but this is an example and is not necessarily limited thereto. According to an embodiment, the 2-3rd sub-slit pattern SSLP2-3 may have a size substantially the same as those of the 2-1st sub-slit pattern SSLP2-1 and the 2-2nd sub-slit pattern SSLP2-2.

[0210] The degrees to which the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 are rotated about the corresponding centers C2-1, C2-2, and C2-3 may all be substantially the same. For example, since the degrees to which the corresponding centers C2-1, C2-2, and C2-3 and the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 are rotated about the corresponding centers C2-1, C2-2, and C2-3 may all be substantially the same, the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 may have substantially the same positions as described above.

[0211] Therefore, to summarize the above, the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 may all be the second slit pattern SLP2 formed in the same pixel (e.g., the second pixel PXL2), and may have substantially the same shape and position. Although the size of the 2-3rd sub-slit pattern SSLP2-3 may be different from the sizes of the 2-1st sub-slit pattern SSLP2-1 and the 2-2nd sub-slit pattern SSLP2-2, this is only an example and may have substantially the same size.

[0212] As described above, the slit pattern SLP may have the same shape, size, and position in the same pixel PXL, and this may be for setting light characteristics achieved by the pixel PXL as uniformly as possible.

[0213] The sub-slit patterns formed in the sub-pixels at the same position in each of the first and second pixels PXL1 and PXL2 adjacent to each other may have substantially the same shape and size, but positions thereof may be different from each other.

[0214] Specifically, comparing the 1-1th sub-slit pattern SSLP1-1 and the 2-1st sub-slit pattern SSLP2-1 formed in the 1-1th sub-pixel SPXL1-1 and the 2-1st sub-pixel SPXL2-1 positioned at the upper left corners of the first pixel PXL1 and the second pixel PXL2, respectively, the 1-1th sub-slit pattern SSLP1-1 and the 2-1st sub-slit pattern SSLP2-1 may both have substantially the same elliptical shape, and may have substantially the same size and have substantially the same center C1-1 and C2-1 in the 1-1st sub-anode electrode SAE1-1 and the 2-1st sub-anode electrode SAE2-1, respectively.

[0215] However, the 1-1th and 2-1st sub-slit patterns SSLP1-1 and SSLP2-1 may be rotated to different degrees about the respective centers C1-1 and C2-1. For example, as described above, the 1-1th and 2-1st sub-slit patterns SSLP1-1 and SSLP2-2 may have different positions.

[0216] Comparing the 1-2nd sub-slit pattern SSLP1-2 and the 2-2nd sub-slit pattern SSLP2-2 formed in the 1-2nd sub-pixel SPXL1-2 and the 2-2nd sub-pixel SPXL2-2 positioned at the lower left corners of the first pixel PXL1 and the second pixel PXL2, respectively, the 1-2nd sub-slit pattern SSLP1-2 and the 2-2nd sub-slit pattern SSLP2-2 may both have substantially the same elliptical shape, and may have substantially the same size and have substantially the same center C1-2 and C2-2 in the 1-2nd sub-anode electrode SAE1-2 and the 2-2nd sub-anode electrode SAE2-2, respectively.

[0217] However, the 1-2nd and 2-2nd sub-slit patterns SSLP1-2 and SSLP2-2 may be rotated to different degrees about the respective centers C1-2 and C2-2. For example, as described above, the 1-2nd and 2-2nd sub-slit patterns SSLP1-2 and SSLP2-2 may also have different positions.

[0218] Comparing the 1st-3rd sub-slit pattern SSLP1-3 and the 2nd-3rd sub-slit pattern SSLP2-3 formed in the 1st-3rd sub-pixel SPXL1-3 and the 2nd-3rd sub-pixel SPXL2-3 positioned at the right side of the first pixel PXL1 and the second pixel PXL2, respectively, the 1st-3rd sub-slit pattern SSLP1-3 and the 2nd-3rd sub-slit pattern SSLP2-3 may both have substantially the same elliptical shape and may have substantially the same size.

[0219] However, the centers C1-3 and C2-3 of the 1-3rd sub-slit pattern SSLP1-3 and the 2-3rd sub-slit pattern SSLP2-3 in the 1-3rd sub-anode electrode SAE1-3 and the 2-3rd sub-anode electrode SAE2-3, respectively, may be different from each other. The degrees to which the 1-3rd sub-slit pattern SSLP1-3 and the 2-3rd sub-slit pattern SSLP2-3 are rotated about the respective centers C1-3 and C2-3 may be different. For example, as described above, the 1-3rd sub-slit pattern SSLP1-3 and the 2-3rd sub-slit pattern SSLP2-3 may also have different positions.

[0220] According to this structure, since light of the same wavelength can be radiated in different directions from each of the first pixel PXL1 and the second pixel PXL2, from the user's perspective, the wavelengths of light seen from the display panel PNL at a specific position can be different from each other, and thus fewer diffraction patterns can be seen, thereby improving visibility when the user views the display panel PNL.

[0221] Next, refer to Figure 9 , the 1-1 to 1-3 sub-slit patterns SSLP1-1, SSLP1-2 and SSLP1-3 may have the same elliptical shape as described above, and may have substantially the same center C1-1, C1-2 and C1-3 in the 1-1 to 1-3 sub-anode electrodes SAE1-1, SAE1-2 and SAE1-3 at which the corresponding 1-1 to 1-3 sub-slit patterns SSLP1-1, SSLP1-2 and SSLP1-3 may be positioned.

[0222] The 1-1th sub-slit pattern SSLP1-1 and the 1-2th sub-slit pattern SSLP1-2 may have substantially the same size, and the 1-3th sub-slit pattern SSLP1-3 may have a size different from those of the 1-1th sub-slit pattern SSLP1-1 and the 1-2nd sub-slit pattern SSLP1-2, but this is an example and is not necessarily limited thereto. According to an embodiment, the 1-3th sub-slit pattern SSLP1-3 may have a size substantially the same as those of the 1-1st sub-slit pattern SSLP1-1 and the 1-2nd sub-slit pattern SSLP1-2.

[0223] The degrees to which the 1-1st to 1-3rd sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 are rotated about the corresponding centers C1-1, C1-2, and C1-3 may all be substantially the same. For example, since the degrees to which the corresponding centers C1-1, C1-2, and C1-3 and the 1-1st to 1-3rd sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 are rotated about the corresponding centers C1-1, C1-2, and C1-3 may all be substantially the same, the 1-1st to 1-3rd sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 may have substantially the same positions.

[0224] So, to summarize the above, Figure 9 The 1-1 to 1-3 sub-slit patterns SSLP1-1, SSLP1-2, and SSLP1-3 shown in FIG may all be the first slit pattern SLP1 formed in the same pixel (e.g., the first pixel PXL1) and may have substantially the same shape and position. Although the size of the 1-3 sub-slit pattern SSLP1-3 may be different from the size of the 1-1 sub-slit pattern SSLP1-1 and the 1-2 sub-slit pattern SSLP1-2, this is only an example and may have substantially the same size.

[0225] Similarly, as described above, the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2 and SSLP2-3 may also all have the same elliptical shape and may have substantially the same center C2-1, C2-2 and C2-3 in the 2-1st to 2-3rd sub-anode electrodes SAE2-1, SAE2-2 and SAE2-3 at which the corresponding 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2 and SSLP2-33 are positioned.

[0226] The 2-1st sub-slit pattern SSLP2-1 and the 2-2nd sub-slit pattern SSLP2-2 may have substantially the same size, and the 2-3rd sub-slit pattern SSLP2-3 may have a size different from those of the 2-1st sub-slit pattern SSLP2-1 and the 2-2nd sub-slit pattern SSLP2-2, but this is an example and is not necessarily limited thereto. According to an embodiment, the 2-3rd sub-slit pattern SSLP2-3 may have a size substantially the same as those of the 2-1st sub-slit pattern SSLP2-1 and the 2-2nd sub-slit pattern SSLP2-2.

[0227] The degrees to which the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 are rotated about the corresponding centers C2-1, C2-2, and C2-3 may all be substantially the same. For example, since the degrees to which the corresponding centers C2-1, C2-2, and C2-3 and the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 are rotated about the corresponding centers C2-1, C2-2, and C2-3 may all be substantially the same, the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 may have substantially the same positions as described above.

[0228] Therefore, to summarize the above, the 2-1st to 2-3rd sub-slit patterns SSLP2-1, SSLP2-2, and SSLP2-3 may all be the second slit pattern SLP2 formed in the same pixel (e.g., the second pixel PXL2), and may have substantially the same shape and position. Although the size of the 2-3rd sub-slit pattern SSLP2-3 may be different from the sizes of the 2-1st sub-slit pattern SSLP2-1 and the 2-2nd sub-slit pattern SSLP2-2, this is only an example and may have substantially the same size.

[0229] As described above, the slit pattern SLP may have the same shape, size, and position in the same pixel PXL, and this may be for setting light characteristics achieved by the pixel PXL as uniformly as possible.

[0230] The sub-slit patterns formed in the sub-pixels at the same position in each of the first and second pixels PXL1 and PXL2 adjacent to each other may have substantially the same shape and position, but sizes thereof may be different from each other.

[0231] Specifically, comparing the 1-1th sub-slit pattern SSLP1-1 and the 2-1st sub-slit pattern SSLP2-1 formed in the 1-1th sub-pixel SPXL1-1 and the 2-1st sub-pixel SPXL2-1 positioned at the upper left corners of the first pixel PXL1 and the second pixel PXL2, respectively, the 1-1th sub-slit pattern SSLP1-1 and the 2-1st sub-slit pattern SSLP2-1 may both have substantially the same elliptical shape, and may have substantially the same size and have substantially the same center C1-1 and C2-1 in the 1-1st sub-anode electrode SAE1-1 and the 2-1st sub-anode electrode SAE2-1, respectively.

[0232] However, the 1-1th sub-slit pattern SSLP1-1 and the 2-1th sub-slit pattern SSLP1-2 may have different sizes.

[0233] As described above, in this specification, since "size" is defined as the "total area" occupied by the specific component to which it refers, the size of the 1-1 sub-slit pattern SSLP1-1 means the "total area" occupied by the 1-1 sub-slit pattern SSLP1-1 in the 1-1 sub-anode electrode SAE1-1, and similarly, the size of the 2-1 sub-slit pattern SSLP2-1 means the "total area" occupied by the 2-1 sub-slit pattern SSLP2-1 in the 2-1 sub-anode electrode SAE2-1.

[0234] In more detail, the total area occupied by the 1-1th sub-slit pattern SSLP1-1 in the 1-1th sub-anode electrode SAE1-1 may correspond to the area of a region excluding a region surrounded by the innermost trench IT1-1 from a region surrounded by the outermost trench OT1-1.

[0235] Similarly, the total area occupied by the 2-1st sub-slit pattern SSLP2-1 in the 2-1st sub-anode electrode SAE2-1 may correspond to the area of a region excluding a region surrounded by the innermost trench IT2-1 from a region surrounded by the outermost trench OT2-1.

[0236] Here, the area A21 of the partial area surrounded by the innermost groove IT2-1 of the 2-1 sub-slit pattern SSLP2-1 can be smaller than the area A11 of the partial area surrounded by the innermost groove IT1-1 of the 1-1 sub-slit pattern SSLP1-1 in the 1-1 sub-slit pattern SSLP1-1 (for example, A11>A21).

[0237] Since the partial area surrounded by the outermost groove OT1-1 of the 1-1 sub-slit pattern SSLP1-1 and the partial area surrounded by the outermost groove OT2-1 of the 2-1 sub-slit pattern SSLP2-1 in the 2-1 sub-slit pattern SSLP2-1 have substantially the same area (this area is referred to as A0), it can be understood that the area of the 2-1 sub-slit pattern SSLP2-1 can be larger than the area of the 1-1 sub-slit pattern SSLP1-1 (because A0-A11 <A0-A21)。

[0238] For example, in summary, the 1-1th sub-slit pattern SSLP1-1 and the 2-1th sub-slit pattern SSLP2-1 may have different sizes.

[0239] Similarly, the total area occupied by the 1-2 th sub-slit pattern SSLP1-2 in the 1-2 th sub-anode electrode SAE1-2 may correspond to the area of a region excluding a region surrounded by the innermost trench IT1-2 from a region surrounded by the outermost trench OT1-2.

[0240] Similarly, the total area occupied by the 2-2nd sub-slit pattern SSLP2-2 in the 2-2nd sub-anode electrode SAE2-2 may correspond to the area of a region excluding a region surrounded by the innermost trench IT2-2 from a region surrounded by the outermost trench OT2-2.

[0241] Here, the area A22 of the partial area surrounded by the innermost groove IT2-2 of the 2-2 sub-slit pattern SSLP2-2 can be smaller than the area A12 of the partial area surrounded by the innermost groove IT1-2 of the 1-2 sub-slit pattern SSLP1-2 in the 1-2 sub-slit pattern SSLP1-2 (for example, A12>A22).

[0242] Since the partial area of the 1-2nd sub-slit pattern SSLP1-2 surrounded by the outermost groove OT1-2 of the 1-2nd sub-slit pattern SSLP1-2 and the partial area of the 2-2nd sub-slit pattern SSLP2-2 surrounded by the outermost groove OT2-2 of the 2-2nd sub-slit pattern SSLP2-2 have substantially the same area (this area is referred to as A0), it can be understood that the area of the 2-2nd sub-slit pattern SSLP2-2 can be larger than the area of the 1-2nd sub-slit pattern SSLP1-2 (because A0-A12 <A0-A22)。

[0243] For example, in summary, the 1-2 th sub-slit pattern SSLP1 - 2 and the 2-2 th sub-slit pattern SSLP2 - 2 may have different sizes.

[0244] The total area occupied by the 1-3rd sub-slit pattern SSLP1-3 in the 1-3rd sub-anode electrode SAE1-3 may correspond to an area A13 of a region excluding a region surrounded by the innermost trench IT1-3 from a region surrounded by the outermost trench OT1-3.

[0245] Similarly, the total area occupied by the 2-3rd sub-slit pattern SSLP2-3 in the 2-3rd sub-anode electrode SAE2-3 may correspond to an area A23 excluding an area surrounded by the innermost trench IT2-3 from an area surrounded by the outermost trench OT2-3.

[0246] Here, the area A23 of the partial area surrounded by the innermost groove IT2-3 of the 2nd-3rd sub-slit pattern SSLP2-3 can be smaller than the area A13 of the partial area surrounded by the innermost groove IT1-3 of the 1st-3rd sub-slit pattern SSLP1-3 in the 1st-3rd sub-slit pattern SSLP1-3 (for example, A13>A23).

[0247] Since the partial area surrounded by the outermost groove OT1-3 of the 1st-3rd sub-slit pattern SSLP1-3 and the partial area surrounded by the outermost groove OT2-3 of the 2nd-3rd sub-slit pattern SSLP2-3 in the 2nd-3rd sub-slit pattern SSLP2-3 have substantially the same area (this area is referred to as A0), it can be understood that the area of the 2nd-3rd sub-slit pattern SSLP2-3 can be larger than the area of the 1st-3rd sub-slit pattern SSLP1-3 (because A0-A13 <A0-A23)。

[0248] For example, in summary, the 1-3rd sub-slit pattern SSLP1-3 and the 2-3rd sub-slit pattern SSLP2-3 may have different sizes.

[0249] According to the structure described above, since light of the same wavelength can be radiated in different directions from each of the first pixel PXL1 and the second pixel PXL2, from the user's perspective, the wavelengths of light seen from the display panel PNL at a specific position can be different from each other, and thus fewer diffraction patterns can be seen, thereby improving the visibility of the user when viewing the display panel PNL.

[0250] In the following, reference will be made to Figures 10 to 21 A method of manufacturing the display device according to the embodiment of the present disclosure described above will be described.

[0251] Figure 10 is a schematic cross-sectional view illustrating formation of a pixel circuit layer on a substrate.

[0252] refer to Figure 10 , a pixel circuit layer PCL may be formed on a substrate SUB. As described above in detail, the pixel circuit layer PCL may include insulating layers, semiconductor patterns formed between the insulating layers, and conductive patterns serving as circuit elements and wiring. The pixel circuit layer PCL may be formed through processes such as deposition, patterning, and etching according to the processing characteristics of each component.

[0253] Figure 11 is a schematic cross-sectional view illustrating forming a first photosensitive material layer on a pixel circuit layer.

[0254] refer to Figure 11A photosensitive material may be applied to the entire surface of the pixel circuit layer PCL including the transistor T to form a first photosensitive material layer PSRL1. As the photosensitive material, for example, a photodegradable polymer resin may be used. As such a photodegradable polymer resin, an organic material that can be used as the material of the via layer VIA described above may be used.

[0255] Although not shown, before forming the first photosensitive material layer PSRL1 on the pixel circuit layer PCL, a passivation layer PSV may be first formed by selecting at least one of the materials of the passivation layer PSV described above.

[0256] Figure 12 is a schematic cross-sectional view illustrating a state in which a first pattern mask is disposed on the first photosensitive material layer.

[0257] refer to Figure 12 The first pattern mask PM1 may be spaced apart from the first photosensitive material layer PSRL1 and may be disposed on the first photosensitive material layer PSRL1. The first pattern mask PM1 may include a first mask substrate MS1 and a first light-blocking pattern LSP1 disposed on the first mask substrate MS1. The first light-blocking pattern LSP1 may include at least three regions having different light transmittances. The first pattern mask PM1 may also be referred to as a halftone mask.

[0258] A transparent glass or plastic substrate may be used as the first mask substrate MS1, but is not necessarily limited thereto. According to embodiments, the first mask substrate MS1 may be made of other materials having light transmittance and mechanical strength (eg, predetermined or selectable mechanical strength).

[0259] The first light-blocking pattern LSP1 may be manufactured by selectively applying a light-blocking material to the first mask substrate MS1. The first light-blocking pattern LSP1 may include a first light-transmitting portion LTU1, a first light-blocking portion LSU1, and a semi-transmitting portion STU.

[0260] The first light-transmitting portion LTU1 may be a region through which light passes, and may be positioned on a region at which the contact hole CH2 may be formed in the via layer VIA.

[0261] The first light blocking portion LSU1 may be a portion that blocks transmission of light, and may be formed by applying a light blocking material to the first mask substrate MS1.

[0262] The semi-transmissive portion STU may be a portion through which a portion of incident light passes, and may be positioned in an area where the slit pattern SLP may be formed. For example, the semi-transmissive portion STU may have a structure in which light-transmitting holes LTH and light-blocking strips LSB may be alternately arranged. In this case, the light transmittance of the semi-transmissive portion STU can be adjusted by adjusting the number or width of the light-transmitting holes LTH, thereby adjusting the width and depth of the slit pattern SLP. As another example, the light transmittance of the semi-transmissive portion STU may also be adjusted by adjusting the concentration of the light-blocking material.

[0263] Figure 13 is a schematic cross-sectional view illustrating irradiating light toward a first pattern mask and a first photosensitive material layer.

[0264] refer to Figure 13 In a state where the first pattern mask PM1 is disposed on the first photosensitive material layer PSRL1, light L may be irradiated from the light source LS in the Z-axis direction. The remaining area EX1 except for the partial area of the first photosensitive material layer PSRL1 covered by the first light-blocking portion LSU1 may be exposed to light, and thus chemical properties may be changed.

[0265] Figure 14 is a schematic cross-sectional view illustrating the development of a partial area of the exposed first photosensitive material layer.

[0266] refer to Figure 14 , a portion of the first photosensitive material layer PSRL1 whose chemical properties have been changed due to exposure to light may be removed by an etchant, thereby forming a via layer VIA including a slit pattern SLP and a contact hole CH2. As described above, the first photosensitive material layer PSRL1 having a property of dissolving an exposed region by an etchant is referred to as a positive photoresist, and conversely, the first photosensitive material layer PSRL1 having a property of dissolving an unexposed region by an etchant is referred to as a negative photoresist.

[0267] Figure 15 is a schematic cross-sectional view illustrating the formation of an anode electrode on a via layer.

[0268] refer to Figure 15 A plurality of anode electrodes AE may be formed on the via layer VIA. The anode electrodes AE may be electrically connected to the first transistor electrodes TE1 of the pixel circuit layer PCL through the contact holes CH2, respectively.

[0269] The portion of the anode electrode AE that overlaps with the corresponding slit pattern SLP may have a shape corresponding to the corresponding slit pattern SLP. According to an embodiment, the 1-1st sub-anode electrode SAE1-1 overlapping with the 1-1st sub-slit pattern SSLP1-1 may have a cross-sectional shape corresponding to the cross-sectional shape of the 1-1st sub-slit pattern SSLP1-1, and similarly to the 1-1st sub-anode electrode SAE1-1, the 1-2nd sub-anode electrode SAE1-2 and the 1-3rd sub-anode electrode SAE1-3 may also have cross-sectional shapes corresponding to the cross-sectional shapes of the 1-2nd sub-slit pattern SSLP1-2 and the 1-3rd sub-slit pattern SSLP1-3, respectively.

[0270] Figure 16 is a schematic cross-sectional view illustrating forming a second photosensitive material layer on the through-hole layer and the anode electrode.

[0271] refer to Figure 16 A photosensitive material may be applied to the upper surfaces of the via layer VIA and the anode electrode AE to form a second photosensitive material layer PSRL2. Similar to the first photosensitive material layer PSRL1, a photodegradable polymer resin may be used as the photosensitive material.

[0272] Figure 17 is a schematic cross-sectional view illustrating a state in which a second pattern mask is provided on the second photosensitive material layer.

[0273] refer to Figure 17 The second pattern mask PM2 may be spaced apart from the second photosensitive material layer PSRL2 and may be disposed on the second photosensitive material layer PSRL2. Similar to the first pattern mask PM1, the second pattern mask PM2 may also include a second mask substrate MS2 and a second light-blocking pattern LSP2 disposed on the second mask substrate MS2.

[0274] The second mask substrate MS2 as the second pattern mask PM2 may be made of a transparent glass or plastic substrate, but is not limited thereto. According to embodiments, the second mask substrate MS2 may be made of other materials having light transmittance and mechanical strength (eg, predetermined or selectable mechanical strength).

[0275] The second light-blocking pattern LSP2 may be manufactured by selectively applying a light-blocking material to the second mask substrate MS2. The second light-blocking pattern LSP2 may include a second light-transmitting portion LTU2 and a second light-blocking portion LSU2.

[0276] The second light-transmitting portion LTU2 may be a region through which light passes, and may be positioned on a region where the opening OP may be formed.

[0277] The second light-blocking portion LSU2 may be a portion that blocks transmission of light, and may be positioned on a region where the opening OP may not be formed.

[0278] Figure 18 is a schematic cross-sectional view illustrating irradiating light toward the second pattern mask and the second photosensitive material layer.

[0279] refer to Figure 18 In a state where the second pattern mask PM2 is disposed on the second photosensitive material layer PSRL2, light L may be irradiated from the light source LS in the Z-axis direction. The remaining area EX2 of the second photosensitive material layer PSRL2 except for the partial area covered by the second light-blocking portion LSU2 may be exposed to light, and thus the chemical properties may be changed.

[0280] Figure 19 is a schematic cross-sectional view illustrating forming a pixel defining layer by developing a partial area of the exposed second photosensitive material layer.

[0281] refer to Figure 19 , a partial region of the second photosensitive material layer PSRL2 , in which chemical properties are changed due to exposure to light, may be removed by an etchant, and thus the upper surface of the anode electrode AE may be exposed.

[0282] A thermal curing process may be performed on a partial area of the second photosensitive material layer PSRL2 that is not removed by the etchant, and thus a pixel defining layer PDL may be formed.

[0283] The opening OP and the edge BR of the opening OP may be defined by a pixel defining layer (PDL). The anode electrode AE may be exposed from the pixel defining layer (PDL) through the opening OP. The pixel defining layer (PDL) may expose the upper surface of the anode electrode AE and may protrude around the anode electrode AE. The pixel defining layer (PDL) may partially overlap with the end of the anode electrode AE, and the opening OP may be positioned on the anode electrode AE. The pixel defining layer (PDL) may be disposed on the anode electrodes AE to flatten the gap between the anode electrodes AE.

[0284] The edge BR of the opening OP may not overlap with the slit pattern SLP. For example, the edge BR of the opening OP may be formed to be spaced apart from the slit pattern SLP by a distance (eg, a predetermined distance or a selectable distance).

[0285] When patterning is performed using photolithography, it can be difficult to form a uniform pattern if the bottom surface of the pattern's boundary region is not substantially flat. According to the disclosed embodiment, since the slit pattern SLP is not formed at the edge BR of the opening OP, the boundary BR of the opening OP can be positioned on a substantially flat surface. Consequently, pattern defects can be prevented during the pixel defining layer (PDL) formation process.

[0286] Figure 20 1 is a schematic cross-sectional view illustrating the formation of a light emitting element layer and a cathode electrode on the anode electrode exposed by the opening.

[0287] refer to Figure 20 The 1-1th sub-light emitting element layer SEML1-1 and the cathode electrode CE may be sequentially formed on the upper surface of the 1-1th sub-anode electrode SAE1-1 exposed by the opening OP. The cathode electrode CE may also be formed on the pixel defining layer PDL.

[0288] The 1-1th sub-light emitting element layer SEML1-1 and the cathode electrode CE may be preferably formed by vapor deposition, but are not necessarily limited thereto. According to the embodiment, the 1-1th sub-light emitting element layer SEML1-1 and the cathode electrode CE may be formed by a suitable method according to each material.

[0289] Figure 21 is a schematic cross-sectional view illustrating the formation of a thin film encapsulation layer and a window on a cathode electrode.

[0290] refer to Figure 21 The thin film encapsulation layer TFE may be formed on the cathode electrode CE. As described above, the thin film encapsulation layer TFE may have a structure in which an organic layer having excellent planarization and shock absorption functions and an inorganic layer having excellent function of blocking foreign substances (such as moisture or air) may be alternately stacked.

[0291] The window WD may be disposed on the thin film encapsulation layer TFE. The window WD protects the lower member from external impacts and provides an input surface and / or a display surface for the user. Specifically, the window WD may have a multilayer structure selected from a glass substrate, a plastic film, and a plastic substrate. The multilayer structure may be formed through a continuous process or a bonding process using an adhesive layer. The entire window WD may be flexible.

[0292] Although not shown for ease of description, a sensing layer (not shown), a light blocking layer (not shown), and a color filter layer (not shown) may be interposed between the window WD and the thin film encapsulation layer TFE, but is not necessarily limited thereto. Depending on the embodiment, at least one of the sensing layer, the light blocking layer, and the color filter layer may be omitted.

[0293] Although specific embodiments and applications are described herein, other embodiments and variations can be derived from the above description. Therefore, the spirit of the present disclosure is not limited to these embodiments, but extends to the claims, various obvious modifications, and equivalent scope.

Claims

1. A display device comprising: a first pixel and a second pixel adjacent to the first pixel, Wherein, the display device includes: a pixel circuit layer, disposed on the substrate; and The display element layer includes a plurality of anode electrodes arranged on the pixel circuit layer, wherein the plurality of anode electrodes include a first anode electrode corresponding to the first pixel and a second anode electrode corresponding to the second pixel, wherein, The pixel circuit layer includes a through-hole layer facing the display element layer, The upper surface of the through-hole layer includes a plurality of slit patterns respectively overlapping the plurality of anode electrodes, and the plurality of slit patterns are adjacent to the display element layer. The plurality of slit patterns include a first slit pattern overlapping the first anode electrode and a second slit pattern overlapping the second anode electrode, and the first slit pattern and the second slit pattern are different from each other in at least one of shape, size, and position, and Portions of the first and second anode electrodes overlapping the first and second slit patterns have shapes corresponding to the first and second slit patterns.

2. The display device according to claim 1, wherein The first pixel includes a 1-1th sub-pixel and a 1-2th sub-pixel adjacent to the 1-1th sub-pixel. The second pixel includes a 2-1st sub-pixel and a 2-2nd sub-pixel adjacent to the 2-1st sub-pixel. The first anode electrode includes a 1-1th sub-anode electrode corresponding to the 1-1th sub-pixel and a 1-2th sub-anode electrode corresponding to the 1-2th sub-pixel. The second anode electrode includes a 2-1st sub-anode electrode corresponding to the 2-1st sub-pixel and a 2-2nd sub-anode electrode corresponding to the 2-2nd sub-pixel. The first slit pattern includes a 1-1 sub-slit pattern corresponding to the 1-1 sub-anode electrode and a 1-2 sub-slit pattern corresponding to the 1-2 sub-anode electrode, and the 1-1 sub-slit pattern and the 1-2 sub-slit pattern have the same shape, and The second slit pattern includes a 2-1st sub-slit pattern corresponding to the 2-1st sub-anode electrode and a 2-2nd sub-slit pattern corresponding to the 2-2nd sub-anode electrode, and the 2-1st sub-slit pattern and the 2-2nd sub-slit pattern have the same shape.

3. The display device according to claim 2, wherein: The 1-1th sub-slit pattern and the 1-2th sub-slit pattern have different sizes.

4. The display device according to claim 3, wherein The 2-1st sub-slit pattern and the 2-2nd sub-slit pattern have different sizes.

5. The display device according to claim 1, wherein Each of the first slit pattern and the second slit pattern has an elliptical shape. The display device according to claim 5 , wherein: A first center of the first slit pattern in the first pixel and a second center of the second slit pattern in the second pixel are disposed at the same position.

7. The display device according to claim 6, wherein: The first slit pattern includes a 1-1 groove and a 1-2 groove having a closed loop shape that are sequentially formed spaced apart from each other in a radial direction relative to the first center, and The second slit pattern includes a 2-1 groove and a 2-2 groove having a closed loop shape that are sequentially formed spaced apart from each other in a radial direction with respect to the second center.

8. The display device according to claim 7, wherein: An area of a portion of the first slit pattern surrounded by the 1-1 groove is different from an area of a portion of the second slit pattern surrounded by the 2-1 groove.

9. The display device according to claim 2, wherein: The first pixel further includes a 1-3 sub-pixel adjacent to the 1-1 sub-pixel and the 1-2 sub-pixel. The second pixel further includes a 2-3 sub-pixel adjacent to the 2-1 sub-pixel and the 2-2 sub-pixel, The first anode electrode further includes a plurality of 1st to 3rd sub-anode electrodes corresponding to the 1st to 3rd sub-pixels, The second anode electrode further includes a plurality of 2nd-3rd sub-anode electrodes corresponding to the 2nd-3rd sub-pixels, The first slit pattern further includes a plurality of 1st to 3rd sub-slit patterns overlapping the plurality of 1st to 3rd sub-anode electrodes, and The second slit pattern further includes a plurality of 2nd-3rd sub-slit patterns overlapping the plurality of 2nd-3rd sub-anode electrodes.

10. The display device according to claim 9, wherein The position of at least one of the first centers of the multiple 1st-3rd sub-slit patterns in the multiple 1st-3rd sub-anode electrodes in the 1st-3rd sub-pixel is different from the position of at least one of the second centers of the multiple 2nd-3rd sub-slit patterns in the multiple 2nd-3rd sub-anode electrodes in the 2nd-3rd sub-pixel.

11. The display device according to claim 9, wherein At least one of the 1-1st, 1-2nd, and 1-3rd sub-slit patterns has a size different from a size of the other of the 1-1st, 1-2nd, and 1-3rd sub-slit patterns.

12. The display device according to claim 9, wherein At least one of the 2-1st sub-slit pattern, the 2-2nd sub-slit pattern, and the 2-3rd sub-slit pattern has a size different from a size of the other of the 2-1st sub-slit pattern, the 2-2nd sub-slit pattern, and the 2-3rd sub-slit pattern.

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