Diode packaging interface test detection method

Abstract

The invention belongs to the technical field of diode packaging interface quality analysis, and discloses a diode packaging interface testing and detecting method, which comprises the following steps of: analyzing an apparent quality index, an electrical performance quality index and a mechanical performance quality index during the quality analysis of a target diode packaging interface so as to judge an abnormal state; according to the analysis mode, the overall quality condition of the diode packaging interface can be reflected more accurately, and the limitation of single index analysis is avoided. According to the invention, when the electrical performance quality condition of the target diode packaging interface is analyzed, the analysis of the temperature influence coefficient of the target diode packaging interface is added, and the analysis mode can reflect the electrical performance of the diode in different temperature environments more truly, so that the analysis result is closer to the actual working condition; the analysis of the temperature influence coefficient provides a more comprehensive view angle for the electrical performance quality evaluation of the diode packaging interface.

Description

Technical Field

[0001] The invention belongs to the technical field of diode package interface quality analysis, and relates to a diode package interface testing method. Background Art

[0002] The diode package interface connects the circuit pins on the diode chip to the external circuit through a specific packaging method. It not only mounts, secures, seals, and protects the chip, but also connects the internal chip to the external circuit through the pins, enabling the transmission of electrical signals. Diode package interfaces can exhibit defects in terms of appearance, electrical performance, and mechanical properties. Therefore, research on a test method for diode package interfaces is of great significance.

[0003] In the prior art, there are also related solutions for diode package interface quality analysis. For example, the invention patent application with publication number CN102393500B is a method for testing a common cathode and common anode packaged diode pair. The method tests the breakdown voltage, reverse leakage current and forward conduction voltage of the two diodes in the two arms respectively, and compares the difference between each set of data. The difference range is set to ±5%. Test and compare the transient thermal resistance of the two diodes in the two arms: the difference between the cold conduction voltage value with a power-on time of 0.38~2ms and the hot conduction voltage value with a power-on time of 10~100ms. The difference between the cold and hot conduction voltages of each diode is no more than 100-300mV, and the difference between the two diodes in the two arms cannot be greater than 15-30mV. Products that meet the above conditions are qualified products.

[0004] Although the above scheme proposes some solutions for diode package interface quality analysis, it still has certain limitations: on the one hand, the existing diode package interface quality analysis process usually only involves analyzing some quality indicators of the target diode, ignoring the influence and comprehensive analysis of the various quality indicators of the target diode. This analysis method may miss some potential problems and cannot accurately grasp the overall quality status of the diode. Different quality indicators are often interrelated and influential. Ignoring the influence between quality indicators may lead to incorrect judgments and decisions, which in turn affects the electrical performance and reliability of the diode.

[0005] On the other hand, the existing diode package interface quality analysis process ignores the impact of external parameters such as temperature on electrical performance when conducting electrical performance quality analysis. This analysis method cannot truly reflect the performance of the diode in the actual working environment, which may lead to misjudgment of the diode quality, greatly affecting the reliability of the equipment or system using the diode, and may cause equipment damage or production interruption, resulting in serious economic losses and safety hazards. The lack of consideration of external parameters such as temperature is also not conducive to product optimization and improvement. Summary of the Invention

[0006] In view of this, in order to solve the problems raised in the above background technology, a diode package interface testing method is proposed.

[0007] The purpose of the present invention can be achieved through the following technical solutions: A diode package interface testing and detection method, including: S1, apparent quality analysis: collecting apparent quality data of the target diode package interface, obtaining the apparent quality data of the target diode package interface, and analyzing the apparent quality of the target diode package interface.

[0008] S2. Electrical performance test: perform several electrical performance tests on the target diode package interface, obtain electrical performance test data of the target diode package interface, and analyze the electrical performance quality of the target diode package interface.

[0009] S3. Mechanical performance test: perform several mechanical performance tests on the target diode package interface, obtain mechanical performance test data of the target diode package interface, and analyze the mechanical performance quality of the target diode package interface.

[0010] S4. Abnormal state identification: Based on the apparent quality, electrical performance quality and mechanical performance quality of the target diode package interface, determine whether the target diode package interface has an abnormal state. If so, identify the specific abnormal state.

[0011] Compared with the prior art, the beneficial effects of the present invention are as follows: (1) When performing quality analysis on the target diode package interface, the present invention analyzes the apparent quality index, electrical performance quality index and mechanical performance quality index to make a judgment on the abnormal state. This analysis method can more accurately reflect the overall quality status of the diode package interface, avoid the limitations of single indicator analysis, and comprehensively consider the relationship and influence between various quality indexes, thereby making a more comprehensive and accurate abnormal state judgment.

[0012] (2) The present invention adds an analysis of the temperature influence coefficient of the target diode package interface when analyzing the electrical performance quality of the target diode package interface. This analysis method can more realistically reflect the electrical performance of the diode under different temperature environments, making the analysis results closer to actual working conditions. The analysis of the temperature influence coefficient provides a more comprehensive perspective for the electrical performance quality assessment of the diode package interface. Combined with the analysis of other electrical performance indicators, it can more accurately determine whether the quality of the diode meets the requirements, thereby strengthening quality control. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0014] Figure 1 Schematic diagram of the steps of the method of the present invention.

[0015] Figure 2 This is a schematic diagram of the center point of the target diode package interface pin of the present invention.

[0016] Figure 3 FIG. 1 is a schematic diagram of the analysis steps for the forward voltage drop according to an embodiment of the present invention.

[0017] Figure 4 FIG. 1 is a schematic diagram of the analysis steps for reverse leakage current according to an embodiment of the present invention.

[0018] Reference numerals: 1--pin, 2--pin center point. DETAILED DESCRIPTION

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0020] See also Figure 1 The present invention provides a diode package interface testing and detection method, and the specific steps are as follows: S1, apparent quality analysis: collecting apparent quality data of the target diode package interface, obtaining the apparent quality data of the target diode package interface, and analyzing the apparent quality of the target diode package interface.

[0021] As a preferred feasible embodiment, the appearance quality data includes package appearance completeness, pin spacing compliance and package marking accuracy.

[0022] It's worth explaining why package appearance integrity, pin pitch conformance, and package marking accuracy were selected as the apparent quality data for the target diode package interface: 1. A complete package appearance provides excellent physical protection for the chip inside the diode, protecting it from external mechanical damage, dust, moisture, and other factors. 2. Correct pin spacing is one of the key factors in ensuring a reliable electrical connection between the diode and the external circuit. If the pin spacing does not meet the standard, it may lead to installation difficulties, poor contact, short circuits, and other problems, thus affecting the normal operation of the diode. 3. Accurate package marking can help users quickly and accurately identify the diode's model, specifications, parameters, and other information, allowing them to correctly select and use the diode.

[0023] It should be further explained that the analysis of the apparent quality of the target diode package interface requires the construction of an apparent quality index of the target diode package interface. The specific analysis steps are as follows: extract the package appearance completeness, pin spacing compliance and package identification accuracy of the target diode package interface, which are recorded as 、 、 .

[0024] Using the formula Analyze and obtain the apparent quality index of the target diode package interface ,in Indicates the preset target diode package interface package appearance integrity threshold, Indicates the preset pin spacing compliance threshold of the target diode package interface. Indicates the preset package identification accuracy threshold of the target diode package interface.

[0025] It should be added that the analysis steps for the package appearance integrity of the target diode package interface are as follows: use a three-dimensional scanning device to obtain the three-dimensional outline of the target diode package interface, and then compare it with the pre-set reference target diode package interface three-dimensional outline, use a three-dimensional information processing device to obtain the volume of the overlapping area, and calculate the ratio of the overlapping area volume to the pre-set reference target diode package interface volume to obtain the package appearance integrity of the target diode package interface.

[0026] It should be added that the analysis steps for the pin spacing compliance of the target diode package interface are as follows: Figure 2, use a three-dimensional scanning device to obtain the three-dimensional contour of the target diode package interface, and then extract the spacing between adjacent pins of the target diode package interface, where the spacing between adjacent pins refers to the spacing between the center points of adjacent pins, and then perform an average calculation to obtain the monitoring pin spacing of the target diode package interface, and then perform a difference calculation with a preset reference pin spacing to obtain a pin spacing deviation value, and perform a ratio calculation on the absolute value of the pin spacing deviation value and the reference pin spacing to obtain a pin spacing deviation amount, and then perform an inversion to obtain the pin spacing compliance of the target diode package interface.

[0027] It should be added that the analysis steps for the package identification accuracy of the target diode package interface are as follows: use a high-definition camera to obtain the appearance image of the target diode package interface, and then locate each pre-set identifier position, compare the actual identifier corresponding to each identifier position with the reference identifier to determine whether they are consistent, and count the number of identifier positions with consistent judgment results, and then calculate the proportion of the identifier positions to obtain the package identification accuracy of the target diode package interface.

[0028] S2. Electrical performance test: perform several electrical performance tests on the target diode package interface, obtain electrical performance test data of the target diode package interface, and analyze the electrical performance quality of the target diode package interface.

[0029] As a preferred feasible embodiment, the electrical performance test data includes forward voltage drop, reverse leakage current, switching time, reverse recovery time and temperature influence coefficient.

[0030] It's important to explain why forward voltage drop and reverse leakage current were chosen as the electrical performance test data for the target diode package interface: 1. Forward voltage drop directly affects the power consumption of the diode in the forward conduction state. A lower forward voltage drop means the diode consumes less power when conducting, which is important for improving circuit efficiency and reducing energy consumption. 2. Reverse leakage current is a key indicator of the diode's cutoff performance under reverse bias. Lower reverse leakage current indicates that the diode is better able to prevent the flow of reverse current, improving circuit isolation and stability.

[0031] It should be noted that the reasons for selecting switching duration and reverse recovery time as the electrical performance test data for the target diode package interface are: 1. A shorter switching duration allows the diode to switch from the on state to the off state, or from the off state to the on state, more quickly, thereby increasing the operating frequency and response speed of the circuit. This is very important for applications such as high-speed data communications, computer processors, and digital signal processing. 2. In rectifier circuits, the reverse recovery time of the diode is an important performance indicator. A shorter reverse recovery time can reduce energy loss during the reverse recovery process and improve rectification efficiency. At the same time, a shorter reverse recovery time can also reduce the voltage spikes generated during the reverse recovery process, protecting other electronic components from damage.

[0032] It should be further explained that the analysis of the electrical performance quality of the target diode package interface requires the construction of an electrical performance quality index of the target diode package interface. The specific analysis steps are as follows: extract the forward voltage drop, reverse leakage current, switching time, reverse recovery time and temperature influence coefficient of the target diode package interface, and record them as 、 、 、 、 .

[0033] Using the formula Analyze and obtain the electrical performance quality index of the target diode package interface ,in Indicates the preset reference forward voltage drop, Indicates the preset reference reverse leakage current, Indicates the preset on / off time threshold, Indicates the preset reverse recovery time threshold. Indicates the allowable difference between the preset forward voltage drop and the reference forward voltage drop. Indicates the allowable difference between the preset reverse leakage current and the reference reverse leakage current.

[0034] It should be noted that the present invention incorporates an analysis of the temperature impact coefficient (TIC) of the target diode package interface when analyzing the electrical performance quality of the target diode package interface. This analysis method more accurately reflects the diode's electrical performance under different temperature environments, making the analysis results more closely aligned with actual operating conditions. TIC analysis provides a more comprehensive perspective for evaluating the electrical performance quality of the diode package interface. Combined with analysis of other electrical performance indicators, it is possible to more accurately determine whether the diode's quality meets requirements, thereby strengthening quality control.

[0035] It's important to note that the reference forward voltage drop for reverse leakage current is determined based on the following: 1. Different diode types (such as rectifier diodes, Zener diodes, and switching diodes) have different reverse leakage current characteristics. When setting the reference reverse leakage current, it's important to determine a reasonable range based on the specific diode type and specifications. 2. The forward voltage drop directly affects the diode's power consumption and efficiency in the circuit. When designing a circuit, determine the appropriate forward voltage drop range based on the circuit's operating voltage, current, and power requirements.

[0036] For example, , .

[0037] It should be noted that the switching time threshold and the reverse recovery time threshold are set based on the following: 1. Different types of diodes have different switching characteristics. For example, Schottky diodes usually have faster switching speeds, while ordinary rectifier diodes have relatively slow switching speeds. When setting the switching time threshold, you need to refer to the specification sheet of the diode used to understand its typical switching time range. 2. Different types of diodes have different reverse recovery characteristics. For example, the reverse recovery time of fast recovery diodes and ultra-fast recovery diodes is usually shorter, while the reverse recovery time of ordinary rectifier diodes is relatively long. When setting the reverse recovery time threshold, you need to determine a reasonable range based on the type and specifications of the diode used.

[0038] For example, , .

[0039] For further explanation, see Figure 3 and Figure 4 The analysis steps of the forward voltage drop and reverse leakage current of the target diode package interface are as follows: A11. Connect the voltage drop test circuit: connect the parameter detection equipment to the target diode package interface, and connect the anode of the target diode package interface to the positive pole of the power supply, and the cathode to the negative pole of the power supply.

[0040] A12. Set voltage drop test parameters: Set test parameters based on the required test current.

[0041] A13. Voltage drop test: Turn on the test equipment and read the voltage value across the target diode package interface at the required test current, which is recorded as the forward voltage drop. Perform multiple sets of voltage drop tests based on the pre-set test time intervals to obtain a number of forward voltage drops.

[0042] A14. Voltage drop analysis: Extract the forward voltage drop corresponding to each voltage drop test and compare it with the preset reference forward voltage drop to obtain the normal forward voltage drop and abnormal forward voltage drop, and then analyze and obtain the forward voltage drop of the target diode package interface.

[0043] It should be added that the analysis steps for obtaining normal forward voltage drop and abnormal forward voltage drop are: calculating the difference between the forward voltage drop corresponding to each voltage drop test and the pre-set reference forward voltage drop to obtain the forward voltage drop deviation value corresponding to each voltage drop test, and then calculating the ratio of the forward voltage drop deviation value corresponding to each voltage drop test and the reference forward voltage drop to obtain the forward voltage drop deviation degree corresponding to each voltage drop test, and then comparing it with the pre-set forward voltage drop deviation degree threshold. If the forward voltage drop deviation degree corresponding to a certain voltage drop test is less than or equal to the forward voltage drop deviation degree threshold, it is judged that the forward voltage drop corresponding to the voltage drop test is a normal forward voltage drop; otherwise, it is judged that the forward voltage drop corresponding to the voltage drop test is an abnormal forward voltage drop.

[0044] It needs to be further supplemented that the step of analyzing and obtaining the forward voltage drop of the target diode package interface is: statistically obtaining the number of normal forward voltage drops and the number of abnormal forward voltage drops, and then comparing them. If the number of normal forward voltage drops is greater than or equal to the number of abnormal forward voltage drops, the average of the normal forward voltage drops is calculated as the forward voltage drop of the target diode package interface; if the number of normal forward voltage drops is less than the number of abnormal forward voltage drops, the average of the abnormal forward voltage drops is calculated as the forward voltage drop of the target diode package interface.

[0045] A21. Connect the leakage current test circuit: Connect the parameter detection device to the target diode package interface, and connect the anode of the target diode package interface to the negative pole of the power supply, and the cathode to the positive pole of the power supply.

[0046] A22. Set leakage current test parameters: Set test parameters based on required reverse voltage.

[0047] A23. Leakage current test: Turn on the test equipment and read the current value passing through the target diode package interface under the required reverse voltage, which is recorded as the reverse leakage current. Perform multiple sets of leakage current tests based on the pre-set test time interval to obtain several reverse leakage currents.

[0048] A24. Leakage current analysis: Extract the reverse leakage current corresponding to each leakage current test and compare it with the preset reference reverse leakage current to obtain the normal reverse leakage current and abnormal reverse leakage current, and then analyze and obtain the reverse leakage current of the target diode package interface.

[0049] It should be added that the analysis steps of the normal reverse leakage current and the abnormal reverse leakage current are as follows: the reverse leakage current corresponding to each leakage current test is difference calculated with the preset reference reverse leakage current to obtain the reverse leakage current deviation value corresponding to each leakage current test, and then the reverse leakage current deviation value corresponding to each leakage current test is ratio calculated with the reference reverse leakage current to obtain the reverse leakage current deviation degree corresponding to each leakage current test, and then compared with the preset reverse leakage current deviation degree threshold value. If the reverse leakage current deviation degree corresponding to a leakage current test is less than or equal to the reverse leakage current deviation degree threshold value, the reverse leakage current corresponding to the leakage current test is judged to be a normal reverse leakage current; otherwise, the reverse leakage current corresponding to the leakage current test is judged to be an abnormal reverse leakage current.

[0050] It should be noted that the specific steps of analyzing and obtaining the reverse leakage current of the target diode package interface refer to the steps of analyzing and obtaining the forward voltage drop of the target diode package interface.

[0051] It needs to be further explained that the analysis steps of the switching time and reverse recovery time of the target diode package interface are as follows: use an oscilloscope to obtain the current change waveform of the target diode package interface diode switching from the off state to the on state and the current change waveform from the on state to the off state, and then read the turn-on time of the target diode package interface switching from the off state to the on state and the turn-off time from the on state to the off state.

[0052] The on-off time of the target diode package interface is averaged to obtain the on-off time of the target diode package interface.

[0053] Use an oscilloscope to obtain the current change waveform corresponding to the target diode package interface switching from the forward conduction state to the reverse bias state, and then obtain the time when the reverse current of the target diode package interface drops to zero and the time when it switches to the reverse bias state.

[0054] The reverse recovery time of the target diode package interface is obtained by performing a difference calculation between the time when the reverse current of the target diode package interface drops to zero and the time when the reverse current switches to the reverse bias state.

[0055] It needs to be further explained that the analysis steps of the temperature influence coefficient of the target diode package interface are as follows: an infrared thermal image of the target diode package interface is collected using an infrared thermal imager, and the range of the infrared thermal image includes the target diode package interface itself and a preset area around the target diode package interface, and then the infrared thermal image is divided to obtain a structural infrared thermal image and an environmental infrared thermal image.

[0056] The infrared thermal image of the structure is extracted and divided into regions according to chromaticity to obtain various chromaticity regions. The area of each chromaticity region is obtained using image processing software. The areas of each chromaticity region corresponding to the same chromaticity are accumulated and calculated to obtain the area corresponding to each chromaticity. The relationship between each chromaticity and the standard chromaticity and temperature is compared to obtain the temperature of each chromaticity.

[0057] Using the formula Analyze and obtain the structural temperature influence coefficient of the target diode package interface ,in Indicates the The temperature corresponding to the chromaticity, A number indicating the chromaticity. , Indicates the amount of chroma, Indicates the preset reference temperature. Indicates the The area of the region corresponding to the chromaticity, represents the area of the structure’s infrared thermal image, Indicates the allowable difference between the preset temperature of each color and the reference temperature.

[0058] Similarly, the ambient temperature influence coefficient of the target diode package interface can be obtained: , using the formula Analyze and obtain the temperature influence coefficient of the target diode package interface ,in They represent the weighting factors of the structural temperature influence coefficient and the ambient temperature influence coefficient of the target diode package interface respectively.

[0059] It needs to be explained that the reasons for selecting the structural temperature influence coefficient and the ambient temperature influence coefficient as the temperature influence coefficient of the target diode package interface are: 1. The packaging structure of the diode has an important influence on its temperature characteristics. The structural temperature influence coefficient can quantify the degree of influence of the packaging structure on the temperature change inside the diode. Different packaging structures have different heat dissipation capabilities and heat conduction paths. By analyzing the structural temperature influence coefficient, we can understand how the packaging structure affects the temperature distribution and thermal stability of the diode. 2. In actual applications, diodes are usually affected by the external ambient temperature. The ambient temperature influence coefficient can quantify the degree of influence of ambient temperature changes on the performance of the diode. Different application scenarios have different ambient temperature ranges. By analyzing the ambient temperature influence coefficient, we can understand how the ambient temperature affects the electrical performance and reliability of the diode.

[0060] It should be noted that the weighting factors for the structural temperature impact coefficient and the ambient temperature impact coefficient of the target diode package interface are set based on the following: 1. If the diode's package structure has a significant impact on its performance, for example, in high-power applications, the package's heat dissipation capability is directly related to the diode's reliability and lifespan, then the weighting factor for the structural temperature impact coefficient can be set higher. Conversely, if the package structure is relatively simple and has a smaller impact on performance, the weighting factor can be appropriately lowered. 2. If the diode's application environment is subject to significant temperature fluctuations, such as in outdoor equipment or temperature-unstable industrial environments, then the weighting factor for the ambient temperature impact coefficient should be higher. This is because changes in ambient temperature directly affect the diode's operating temperature, which in turn affects its performance and reliability.

[0061] For example, .

[0062] S3. Mechanical performance test: perform several mechanical performance tests on the target diode package interface, obtain mechanical performance test data of the target diode package interface, and analyze the mechanical performance quality of the target diode package interface.

[0063] As a preferred feasible embodiment, the mechanical performance test data includes a pin firmness index and a dimensional stability index.

[0064] The reasons for selecting the pin robustness index and dimensional stability index as mechanical performance test data for the target diode package interface are as follows: 1. The diode pins are the key component for achieving electrical connection with the external circuit. The pin robustness index directly reflects the pin's ability to maintain a stable connection under various stress conditions. 2. The dimensional stability of the diode is crucial for its assembly accuracy in electronic devices. Dimensional instability of the diode can lead to installation difficulties, poor contact, and poor interoperability with other components, compromising the performance and reliability of the device.

[0065] It should be further explained that the analysis of the mechanical performance quality of the target diode package interface requires the construction of a mechanical performance quality index of the target diode package interface. The specific analysis steps are as follows: extract the pin firmness index and dimensional stability index of the target diode package interface, which are recorded as 、 .

[0066] It should be added that the pin firmness index of the target diode package interface is analyzed by connecting the tension sensor of the tension test equipment to the pin of the target diode package interface, and then performing a tension test based on a preset reference tension. The tension sensor monitors the tension value when the pin is pulled in real time. When the tension value reaches the reference tension value, observe whether there is looseness or falling off. If so, ,on the contrary .

[0067] It should be added that the analysis method of the dimensional stability index of the target diode package interface is as follows: a preset mechanical force is applied to each pin of the target diode package interface using mechanical testing equipment, and the deformation of each pin of the target diode package interface is obtained using a three-dimensional scanning device, and then the difference between the deformation and the preset reference deformation is calculated to obtain the deformation deviation of each pin, and then the mean is calculated to obtain the average deformation deviation, and the ratio of the deformation deviation to the reference deformation is calculated to obtain the deformation deviation degree, and then the inverse calculation is performed to obtain the dimensional stability index of the target diode package interface.

[0068] Using the formula Analyze and obtain the mechanical performance quality index of the target diode package interface ,in Represents a natural constant.

[0069] S4. Abnormal state identification: Based on the apparent quality, electrical performance quality and mechanical performance quality of the target diode package interface, determine whether the target diode package interface has an abnormal state. If so, identify the specific abnormal state.

[0070] It should be further explained that the specific analysis for determining whether the target diode package interface is in an abnormal state is as follows: extracting the apparent quality index, electrical performance quality index and mechanical performance quality index of the target diode package interface.

[0071] Using the formula i obtains the quality index of the target diode package interface ,in They represent the weight factors corresponding to the apparent quality index, electrical performance quality index, and mechanical performance quality index of the target diode package interface, respectively.

[0072] It should be noted that the weighting factors for the target diode package interface's appearance quality index, electrical quality index, and mechanical quality index are determined by comparing the importance of appearance quality index with the electrical and mechanical quality indices. If electrical and mechanical performance are more critical in a specific application, the weighting of appearance quality index can be lower. For example, in industrial applications with extremely high reliability requirements, electrical and mechanical performance may be more important than appearance.

[0073] For example, .

[0074] It should be noted that, when performing the quality analysis of the target diode package interface, the present invention analyzes the apparent quality index, electrical performance quality index and mechanical performance quality index, and then makes a judgment on the abnormal state. This analysis method can more accurately reflect the overall quality status of the diode package interface, avoid the limitations of single indicator analysis, and comprehensively consider the relationship and influence between various quality indexes, thereby making a more comprehensive and accurate abnormal state judgment.

[0075] The quality index of the target diode package interface is compared with a pre-set quality index threshold. If the quality index of the target diode package interface is greater than or equal to the quality index threshold, it is determined that there is no abnormal state in the target diode package interface. If the quality index of the target diode package interface is less than the quality index threshold, it is determined that there is an abnormal state in the target diode package interface.

[0076] It should be further explained that the specific steps for identifying the specific abnormal state are as follows: extracting the apparent quality index, electrical performance quality index and mechanical performance quality index of the target diode package interface, and then comparing them with the pre-set apparent quality index threshold, electrical performance quality index threshold and mechanical performance quality index threshold.

[0077] If the apparent quality index of the target diode package interface is less than the apparent quality index threshold, it is determined that the specific abnormal state points to an apparent quality abnormality.

[0078] If the electrical performance quality index of the target diode package interface is less than the electrical performance quality index threshold, it is determined that the specific abnormal state points to an electrical performance quality abnormality.

[0079] If the mechanical performance quality index of the target diode package interface is less than the mechanical performance quality index threshold, it is determined that the specific abnormal state points to a mechanical performance quality abnormality.

[0080] The above contents are merely examples and explanations of the concept of the present invention. Those skilled in the art may make various modifications or additions to the described specific embodiments or replace them in a similar manner. As long as they do not deviate from the concept of the invention or exceed the scope defined by the present invention, they should all fall within the scope of protection of the present invention.

Claims

1. A diode package interface test method, characterized in that: include: S1. Apparent quality analysis: collect apparent quality data of the target diode package interface, obtain the apparent quality data of the target diode package interface, and analyze the apparent quality of the target diode package interface; S2. Electrical performance test: perform several electrical performance tests on the target diode package interface, obtain electrical performance test data of the target diode package interface, and analyze the electrical performance quality of the target diode package interface; S3. Mechanical performance test: perform several mechanical performance tests on the target diode package interface, obtain mechanical performance test data of the target diode package interface, and analyze the mechanical performance quality of the target diode package interface; S4. Abnormal state identification: Based on the apparent quality, electrical performance quality and mechanical performance quality of the target diode package interface, determine whether the target diode package interface has an abnormal state. If so, identify the specific abnormal state.

2. A diode package interface testing method according to claim 1, characterized in that: The appearance quality data includes package appearance integrity, pin spacing compliance and package marking accuracy; The electrical performance test data includes forward voltage drop, reverse leakage current, switching time, reverse recovery time and temperature influence coefficient; The mechanical property test data includes a pin firmness index and a dimensional stability index.

3. A diode package interface testing method according to claim 2, characterized in that: The analysis of the apparent quality of the target diode package interface requires constructing an apparent quality index of the target diode package interface, and the specific analysis steps are as follows: Extract the package appearance completeness, pin spacing compliance and package marking accuracy of the target diode package interface, and record them as 、 、 ; Using the formula Analyze and obtain the apparent quality index of the target diode package interface ,in Indicates the preset target diode package interface package appearance integrity threshold, Indicates the preset pin spacing compliance threshold of the target diode package interface. Indicates the preset package identification accuracy threshold of the target diode package interface.

4. A diode package interface testing method according to claim 3, characterized in that: The analysis of the electrical performance quality of the target diode package interface requires constructing an electrical performance quality index of the target diode package interface. The specific analysis steps are as follows: Extract the forward voltage drop, reverse leakage current, switching time, reverse recovery time and temperature influence coefficient of the target diode package interface and record them as 、 、 、 、 ; Using the formula Analyze and obtain the electrical performance quality index of the target diode package interface ,in Indicates the preset reference forward voltage drop, Indicates the preset reference reverse leakage current, Indicates the preset on / off time threshold, Indicates the preset reverse recovery time threshold. Indicates the allowable difference between the preset forward voltage drop and the reference forward voltage drop. Indicates the allowable difference between the preset reverse leakage current and the reference reverse leakage current.

5. A diode package interface testing method according to claim 4, characterized in that: The steps for analyzing the forward voltage drop and reverse leakage current of the target diode package interface are as follows: A11. Connect the voltage drop test circuit: Connect the parameter detection device to the target diode package interface, and connect the anode of the target diode package interface to the positive terminal of the power supply, and the cathode to the negative terminal of the power supply; A12. Set voltage drop test parameters: Set test parameters based on the required test current; A13. Voltage drop test: Turn on the test equipment and read the voltage across the target diode package interface at the required test current, recording it as the forward voltage drop. Perform multiple voltage drop tests based on pre-set test time intervals to obtain a certain number of forward voltage drops. A14. Voltage drop analysis: Extract the forward voltage drop corresponding to each voltage drop test and compare it with the preset reference forward voltage drop to obtain the normal forward voltage drop and abnormal forward voltage drop. Then, analyze and obtain the forward voltage drop of the target diode package interface. A21. Connect the leakage current test circuit: Connect the parameter detection device to the target diode package interface, and connect the anode of the target diode package interface to the negative terminal of the power supply, and the cathode to the positive terminal of the power supply; A22. Set leakage current test parameters: Set test parameters based on required reverse voltage; A23. Leakage current test: Turn on the test equipment and read the current value passing through the target diode package interface under the required reverse voltage, which is recorded as the reverse leakage current. Perform multiple sets of leakage current tests based on pre-set test time intervals to obtain a number of reverse leakage currents. A24. Leakage current analysis: Extract the reverse leakage current corresponding to each leakage current test and compare it with the preset reference reverse leakage current to obtain the normal reverse leakage current and abnormal reverse leakage current, and then analyze and obtain the reverse leakage current of the target diode package interface.

6. A diode package interface testing method according to claim 4, characterized in that: The analysis steps for the switching time and reverse recovery time of the target diode package interface are as follows: Use an oscilloscope to obtain the current change waveform of the target diode package interface diode when it switches from the off state to the on state and the current change waveform when it switches from the on state to the off state, and then read the turn-on time of the target diode package interface when it switches from the off state to the on state and the turn-off time when it switches from the on state to the off state; The on-off time and off-off time of the target diode package interface are averaged to obtain the on-off time of the target diode package interface; Use an oscilloscope to obtain the current change waveform corresponding to the target diode package interface switching from the forward conduction state to the reverse bias state, and then obtain the time when the reverse current of the target diode package interface drops to zero and the time when it switches to the reverse bias state; The reverse recovery time of the target diode package interface is obtained by performing a difference calculation between the time when the reverse current of the target diode package interface drops to zero and the time when the reverse current switches to the reverse bias state.

7. A diode package interface testing method according to claim 4, characterized in that: The analysis steps of the temperature influence coefficient of the target diode package interface are as follows: An infrared thermal image of the target diode package interface is captured using an infrared thermal imager, where the infrared thermal image includes the target diode package interface itself and a preset area around the target diode package interface, and the infrared thermal image is divided into a structural infrared thermal image and an environmental infrared thermal image; Extract the infrared thermal image of the structure, divide the area into different chromaticity areas according to chromaticity, use image processing software to obtain the area of each chromaticity area, accumulate the areas of each chromaticity area corresponding to the same chromaticity to obtain the area of the area corresponding to each chromaticity, and compare the relationship between each chromaticity and the standard chromaticity and temperature to obtain the temperature of each chromaticity; Using the formula Analyze and obtain the structural temperature influence coefficient of the target diode package interface ,in Indicates the The temperature corresponding to the chromaticity, A number indicating the chromaticity. , Indicates the amount of chroma, Indicates the preset reference temperature. Indicates the The area of the region corresponding to the chromaticity, represents the area of the structure’s infrared thermal image, Indicates the permissible difference between the preset temperature of each color and the reference temperature; Similarly, the ambient temperature influence coefficient of the target diode package interface can be obtained: , using the formula Analyze and obtain the temperature influence coefficient of the target diode package interface ,in They represent the weighting factors of the structural temperature influence coefficient and the ambient temperature influence coefficient of the target diode package interface respectively.

8. The diode package interface testing method according to claim 4, wherein: The analysis of the mechanical performance quality of the target diode package interface requires the construction of a mechanical performance quality index of the target diode package interface. The specific analysis steps are as follows: Extract the pin firmness index and dimensional stability index of the target diode package interface, which are recorded as 、 ; Using the formula Analyze and obtain the mechanical performance quality index of the target diode package interface ,in Represents a natural constant.

9. A diode package interface testing method according to claim 8, characterized in that: The specific analysis of determining whether the target diode package interface is in an abnormal state is as follows: Extract the apparent quality index, electrical performance quality index and mechanical performance quality index of the target diode package interface; Using the formula i obtains the quality index of the target diode package interface ,in Respectively represent the weight factors corresponding to the apparent quality index, electrical performance quality index, and mechanical performance quality index of the target diode package interface; The quality index of the target diode package interface is compared with a pre-set quality index threshold. If the quality index of the target diode package interface is greater than or equal to the quality index threshold, it is determined that there is no abnormal state in the target diode package interface. If the quality index of the target diode package interface is less than the quality index threshold, it is determined that there is an abnormal state in the target diode package interface.

10. A diode package interface testing method according to claim 9, characterized in that: The specific steps of identifying the specific abnormal state are as follows: Extracting the apparent quality index, electrical performance quality index, and mechanical performance quality index of the target diode package interface, and then comparing them with pre-set apparent quality index thresholds, electrical performance quality index thresholds, and mechanical performance quality index thresholds; If the apparent quality index of the target diode package interface is less than the apparent quality index threshold, it is determined that the specific abnormal state points to an apparent quality abnormality; If the electrical performance quality index of the target diode package interface is less than the electrical performance quality index threshold, it is determined that the specific abnormal state points to an electrical performance quality abnormality; If the mechanical performance quality index of the target diode package interface is less than the mechanical performance quality index threshold, it is determined that the specific abnormal state points to a mechanical performance quality abnormality.

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