MEMS resonator

Abstract

The MEMS resonator comprises an anchoring area, a first resonance group and a second resonance group, the anchoring area comprises a connecting part located in the center and a plurality of reinforcing parts arranged around the connecting part, the adjacent reinforcing parts are spaced, and the reinforcing parts are connected with the connecting part; the first resonance group comprises a plurality of first resonance units arranged on the outer side of the anchoring area, and a first connecting beam for connecting the first resonance units with the connecting part; the second resonance group comprises a plurality of second resonance units arranged on the outer side of the anchoring area and a second connecting beam connecting the second resonance units with the connecting part, the number of the second resonance units is n times that of the first resonance units, and n is a positive integer larger than or equal to 1; wherein any first resonance unit is adjacent to the two second resonance units, the included angle between each second connecting beam and the adjacent first connecting beam is an acute angle, and the equivalent crystal orientation of the first resonance units is different from that of the second resonance units.

Description

Technical Field

[0001] The present invention relates to the field of micro-electromechanical technology, and in particular to a MEMS resonator. Background Art

[0002] MEMS (Micro-Electro-Mechanical Systems) resonators primarily refer to miniature resonant structures manufactured using silicon-based semiconductor processes. They are capable of generating stable periodic motion and are often used in frequency reference or sensing applications. Compared to traditional quartz crystal resonators, MEMS resonators can use semiconductor processes to create smaller and more complex microstructures, thus enabling higher-integration, smaller, and lower-cost resonant components, and have great development potential.

[0003] Currently, MEMS resonators are usually equipped with multiple resonant structures to increase the equivalent capacitance area, thereby reducing the equivalent impedance and improving the performance of the MEMS resonator. However, the multiple resonant structures of existing MEMS resonators are usually arranged in a cross shape, or connected in sequence to form a ring, resulting in the multiple resonant structures of the MEMS resonator having the same equivalent crystal orientation when working. As a result, the MEMS resonator has only one TCF (Temperature Coefficient of Frequency) characteristic, which cannot meet the usage scenarios of different temperature environments. Summary of the Invention

[0004] In view of this, the present invention provides a MEMS resonator with multiple TCF characteristics to meet different usage scenarios.

[0005] The present application provides a MEMS resonator, comprising:

[0006] An anchoring area, comprising a central connecting portion and a plurality of reinforcing portions arranged around the connecting portion, with adjacent reinforcing portions spaced apart and the reinforcing portions respectively connected to the connecting portion;

[0007] a first resonance group comprising a plurality of first resonance units disposed outside the anchoring region and a first connection beam connecting the first resonance units to the connection portion;

[0008] a second resonance group, comprising a plurality of second resonance units disposed outside the anchoring region, and a second connecting beam connecting the second resonance units to the connecting portion, wherein the number of the second resonance units is n times that of the first resonance units, where n is a positive integer greater than or equal to 1;

[0009] Any first resonant unit is adjacent to two second resonant units respectively, the angle between each second connecting beam and the adjacent first connecting beam is an acute angle, and the equivalent crystal orientation of the first resonant unit is different from the equivalent crystal orientation of the second resonant unit.

[0010] The MEMS resonator provided by the present invention forms an acute angle between the first connecting beam of the first resonant group and the second connecting beam of the second resonant group by providing a first resonant group and a second resonant group, i.e., the first connecting beam and the second connecting beam are not perpendicular, thereby making the equivalent crystal orientation of the first resonant unit different from the equivalent crystal orientation of the second resonant unit. The difference in the equivalent crystal orientation directly affects parameters such as the resonant frequency and temperature stability of the MEMS resonator. The MEMS resonator can form different TCF characteristics by controlling the resonance of one of the first resonant group and the second resonant group, or controlling both of the first resonant group and the second resonant group. A MEMS resonator has at least two different TCF characteristics. Therefore, a MEMS resonator can meet usage scenarios with different temperatures, thereby broadening the applicability of the MEMS resonator.

[0011] Moreover, the first resonance group includes a plurality of first resonance units, and the second resonance group includes a plurality of second resonance units, which increases the number of resonance units and is conducive to reducing the equivalent impedance of the MEMS resonator. In addition, the plurality of first resonance units and the plurality of second resonance units are respectively connected to the connection portion of the anchoring area, which is conducive to reducing the anchor point loss, thereby improving the overall performance of the MEMS resonator.

[0012] At the same time, the anchoring area includes a connecting part and multiple reinforcing parts. The connecting part is used to connect with multiple first resonance units and second resonance units to reduce anchor point loss, and the multiple reinforcing parts are used to connect with other objects such as a base substrate. The setting of the reinforcing part can increase the contact area between the anchoring area and other objects to facilitate fixing operations. Therefore, by setting the anchoring area to include a connecting part and multiple reinforcing parts, it can achieve the effect of reducing anchor point loss and facilitating the fixing operation of the anchoring area. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 A schematic structural diagram of a MEMS resonator provided in one embodiment of the present invention;

[0014] Figure 2 A schematic structural diagram of a first resonance group and two second resonance groups with an angle of 30° is provided for one embodiment of the present invention;

[0015] Figure 3 A schematic structural diagram of two first resonance groups and two second resonance groups provided in one embodiment of the present invention;

[0016] Figure 4A schematic diagram of the structure of a resonant ring having a circular inner edge and a polygonal outer edge with rounded corners provided in one embodiment of the present invention;

[0017] Figure 5 A schematic diagram of the structure of a resonant ring with a circular inner edge and an irregular circular outer edge provided in one embodiment of the present invention;

[0018] Figure 6 A schematic diagram of the structure of a resonant ring having a rounded inner edge and an irregular circular outer edge provided in one embodiment of the present invention;

[0019] Figure 7 A schematic diagram of the structure of a resonant ring with a circular inner edge and a regular hexagonal outer edge provided in one embodiment of the present invention;

[0020] Figure 8 A schematic diagram of the structure of a resonant ring with a circular inner edge and an irregular octagonal outer edge provided in one embodiment of the present invention;

[0021] Figure 9 A schematic diagram of the structure of a resonant ring with a circular inner edge and a regular pentagonal outer edge provided in one embodiment of the present invention;

[0022] Figure 10 A schematic diagram of a structure in which both the inner and outer edges are rectangular with rounded corners provided in one embodiment of the present invention;

[0023] Figure 11 for Figure 1 Schematic diagram of the anchoring region, the first connecting beam and the second connecting beam of the MEMS resonator shown in FIG;

[0024] Figure 12 A schematic diagram of a case where both the first connecting beam and the second connecting beam provided in one embodiment of the present invention include a bending structure;

[0025] Figure 13 A schematic diagram of a case where both the first connecting beam and the second connecting beam provided in one embodiment of the present invention include a hollow structure;

[0026] Figure 14 A schematic diagram of an embodiment of the present invention in which the first connecting beam includes a bent structure and the second connecting beam includes a hollow structure;

[0027] Figure 15 A schematic diagram of an embodiment of the present invention in which the first connecting beam includes a hollow structure and the second connecting beam includes a bent structure;

[0028] Figure 16 A schematic diagram of a first resonant structure and a second resonant structure provided in an embodiment of the present invention when the sizes are different;

[0029] Figure 17 A schematic diagram of a dual-port driving method of a MEMS resonator provided in one embodiment of the present invention;

[0030] Figure 18 A schematic diagram of a single-port driving method of a MEMS resonator provided in one embodiment of the present invention;

[0031] Figure 19 for Figure 17 、 Figure 18 Schematic diagram of the working mode of the MEMS resonator shown in;

[0032] Figure 20 A schematic diagram of a multi-port driving method of a MEMS resonator provided in one embodiment of the present invention;

[0033] Figure 21 A schematic diagram of another multi-port driving method of a MEMS resonator provided by an embodiment of the present invention;

[0034] Figure 22 for Figure 20 、 Figure 21 Schematic diagram of the working mode of the MEMS resonator shown in;

[0035] Figure 23 Schematic diagram of another working mode of MEMS resonator;

[0036] Figure 24 For MEMS resonators operating in Figure 19 and Figure 21 TCF curve under the working mode;

[0037] Figure 25 for Figure 1 A cross-sectional view of the MEMS resonator along line AA shown in FIG;

[0038] Figure 26 A schematic structural diagram of a MEMS resonator provided in another embodiment of the present invention.

[0039] In the figure: 10, MEMS resonator; 12, first resonant group; 14, second resonant group; 16, anchoring area; 18, first resonant unit; 20, first connecting beam; 22, second resonant unit; 24, second connecting beam; 26, inner edge; 28, outer edge; 30, widened area; 32, narrowed area; 34, connecting part; 36, reinforcing part; 38, base; 40, extension part; 42, fixed beam; 44, bending structure; 46, hollow structure; 48, driving electrode; 50, sensing electrode; 52, positive driving electrode; 54, negative driving electrode; 56, positive sensing electrode; 58, negative sensing electrode; 60, resonant mechanism; 62, resonant structure; 64, base substrate; 66, device layer; 68, separation layer. DETAILED DESCRIPTION

[0040] The present invention will be further described below in conjunction with the accompanying drawings and specific implementation methods. It should be noted that, under the premise of no conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.

[0041] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, inside, outside, top, bottom, etc.) are only used to explain the relative position relationship between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0042] It should also be noted that when an element is referred to as being “fixed on” or “disposed on” another element, the element may be directly on the other element or there may be an intermediate element. When an element is referred to as being “connected to” another element, it may be directly connected to the other element or there may be an intermediate element.

[0043] See also Figure 1 A MEMS resonator 10 provided by one embodiment of the present invention includes a first resonant group 12, a second resonant group 14, and an anchoring region 16. The first resonant group 12 and the second resonant group 14 are respectively connected to the anchoring region 16. The first resonant group 12 and the second resonant group 14 are used for resonating. The anchoring region 16 is used to support the first resonant group 12 and the second resonant group 14, so that the first resonant group 12 and the second resonant group 14 form a suspended effect.

[0044] The first resonance group 12 includes a plurality of first resonance units 18 and a plurality of first connection beams 20. Each first resonance unit 18 is connected to the anchoring region 16 via a first connection beam 20. The second resonance group 14 includes a plurality of second resonance units 22 and a plurality of second connection beams 24. Each second resonance unit 22 is connected to the anchoring region 16 via a second connection beam 24. The plurality of first resonance units 18 and the plurality of second resonance units 22 are located outside the anchoring region 16 and are arranged at intervals along the circumference of the anchoring region 16.

[0045] The number of second resonant units 22 is n times the number of first resonant units 18, where n is a positive integer greater than or equal to 1. Any first resonant unit 18 is adjacent to two second resonant units 22. The angle between each second connecting beam 24 and an adjacent first connecting beam 20 is acute, meaning the angle between each second connecting beam 24 and an adjacent first connecting beam 20 is greater than 0° and less than 90°. All second connecting beams 24 and first connecting beams 20 are non-perpendicular, resulting in a difference in the equivalent crystal orientation of the first resonant unit 18 and the equivalent crystal orientation of the second resonant unit 22. It should be noted that a first connecting beam 20 adjacent to a second connecting beam 24 is one that has the smallest angle with the second connecting beam 24. Since the equivalent crystal orientations of the first resonant unit 18 and the second resonant unit 22 are different, the difference in the equivalent crystal orientation will directly affect the resonant frequency, temperature stability and other parameters of the MEMS resonator 10, so that the MEMS resonator 10 can form different TCF characteristics by controlling the resonance of one of the first resonant group 12 and the second resonant group 14 or controlling both to resonate. A MEMS resonator 10 has at least two different TCF characteristics, so a MEMS resonator 10 can meet the usage scenarios of different temperatures, thereby broadening the applicability of the MEMS resonator 10.

[0046] Preferably, the angle between each second connecting beam 24 and the adjacent first connecting beam 20 is 30° to 60°, that is, the angle is greater than or equal to 30° and less than or equal to 60°, so as to avoid the problem that the angle is too close to 0° or 90°, resulting in a small difference in the equivalent crystal orientation of the first resonant unit 18 and the second resonant unit 22.

[0047] It should be noted that, in addition to adjusting the difference between the equivalent crystal orientations of the first resonant unit 18 and the second resonant unit 22 by adjusting the relative positions of the first resonant unit 18 and the second resonant unit 22, that is, adjusting the angle between the second connecting beam 24 and the adjacent first connecting beam 20, the difference can also be adjusted by other means. For example, the adjustment can be made by changing the shapes of the first resonant unit 18 and the second resonant unit 22. Therefore, when the angle between the second connecting beam 24 and the first connecting beam 20 is large or small, the shapes of the first resonant unit 18 and the second resonant unit 22 can be further designed on this basis to increase the difference in the equivalent crystal orientations between the first resonant unit 18 and the second resonant unit 22, so that the MEMS resonator 10 can meet the usage scenarios of different temperatures.

[0048] In an optional example, during operation, the MEMS resonator 10 can independently drive the first resonance group 12 to resonate to form a corresponding TCF characteristic, and the MEMS resonator 10 can also independently drive the second resonance group 14 to resonate to form another corresponding TCF characteristic. Alternatively, the MEMS resonator 10 can simultaneously drive the first resonance group 12 and the second resonance group 14 to resonate to form another mixed TCF characteristic, so that one MEMS resonator 10 has three different TCF characteristics, thereby further broadening the applicable scenarios of the MEMS resonator 10.

[0049] The number of first resonant units 18 and second resonant units 22 is an even number. The first resonant units 18 and the first connecting beams 20 of the first resonant group 12 are symmetrically arranged relative to the anchoring region 16, and the first resonant units 18 have the same shape and size. The second resonant units 22 and the second connecting beams 24 of the second resonant group 14 are symmetrically arranged relative to the anchoring region 16, and the second resonant units 22 have the same shape and size. This symmetrical arrangement facilitates better offsetting of the energy generated by the resonance of the first resonant units 18 and the energy generated by the resonance of the second resonant units 22 at the anchoring region 16, thereby reducing losses and improving the overall performance of the MEMS resonator 10.

[0050] In one embodiment, the number of second resonant units 22 is twice that of first resonant units 18, while the number of first resonant units 18 is multiple, i.e., there are at least two first resonant units 18 and at least four second resonant units 22. The number of first connecting beams 20 and second connecting beams 24 corresponds one-to-one to the number of first resonant units 18 and second resonant units 22, respectively. The second connecting beam 24 of each second resonant unit 22 forms an angle with the most adjacent first connecting beam 20. The multiple second connecting beams 24 form multiple angles with their corresponding first connecting beams 20, and any two of the multiple angles are the same or complementary. The two angles between the two second connecting beams 24 and their corresponding first connecting beams 20 are the same or complementary, so that the equivalent crystal orientations of the two second resonant units 22 connected to the two second connecting beams 24 are the same. Any two of the angles are the same or complementary, meaning that the equivalent crystal orientations of the multiple resonant units in the second resonant group 14 are all the same.

[0051] The equivalent crystal orientations of the first resonant units 18 of the first resonant group 12 are the same, and the equivalent crystal orientations of the second resonant units 22 of the second resonant group 14 are the same. The equivalent crystal orientations of the first resonant units 18 and the second resonant units 22 are different.

[0052] The specific number of the first resonance units 18 is not limited, for example, two or four.

[0053] In one embodiment, the number of the first resonance group 12 is one, which includes two first resonance units 18. Each first resonance unit 18 is connected to the anchoring area 16 via a first connecting beam 20. The two first resonance units 18 and the two first connecting beams 20 are respectively located on opposite sides of the anchoring area 16 and are symmetrically arranged relative to the anchoring area 16.

[0054] There are two second resonance groups 14, each of which includes two second resonance units 22. Each second resonance unit 22 is connected to the anchoring area 16 via a second connecting beam 24. The second resonance units 22 and the second connecting beams 24 of the two second resonance groups 14 are symmetrically arranged relative to the first resonance group 12.

[0055] In this embodiment, the MEMS resonator 10 includes two first resonant units 18 and four second resonant units 22. The two first resonant units 18 form a first resonant group 12, and the four second resonant units 22 form two second resonant groups 14. The two second resonant groups 14 are arranged in an X-shape. The two second resonant units 22 on the same side of the two second resonant groups 14 are located on one side of the first resonant group 12, and the two second resonant units 22 on the other side of the two second resonant groups 14 are located on the other opposite side of the first resonant group 12. The second resonant units 22 and the second connecting beams 24 on opposite sides of the first resonant group 12 are symmetrical about an axis of symmetry extending along the length of the first connecting beam 20, so that the angles between the multiple second connecting beams 24 and the corresponding first connecting beams 20 are the same.

[0056] The specific angle between the second connecting beam 24 and the first connecting beam 20 is not limited, for example, 30°, 45°, 60°, etc.

[0057] exist Figure 1 In the illustrated embodiment, the angle between each second connecting beam 24 and the adjacent first connecting beam 20 is 60°, and the angle between two adjacent second connecting beams 24 is also 60°. In this case, the multiple first connecting beams 20 and the multiple second connecting beams 24 are arranged at equal intervals along the circumference of the anchoring area 16, that is, the multiple first resonant units 18 and the multiple second resonant units 22 are arranged at equal intervals.

[0058] exist Figure 2 In the illustrated embodiment, the angle between each second connecting beam 24 and the adjacent first connecting beam 20 is 30°, and the spacing between two adjacent second connecting beams 24 is 120°. At this time, the spacing between the first connecting beam 20 and the adjacent second connecting beam 24 is smaller than the spacing between the two adjacent second connecting beams 24. At this time, the spacing between each second connecting beam 24 and the adjacent first connecting beam 20 is the same and smaller than the spacing between the two adjacent second connecting beams 24.

[0059] exist Figure 3 In the illustrated embodiment, the number of the first resonance groups 12 and the number of the second resonance groups 14 are both two. Each first resonance group 12 includes two first resonance units 18, and each second resonance group 14 includes two second resonance units 22. That is, the MEMS resonator 10 includes four first resonance units 18 and four second resonance units 22. The four first resonance units 18 and the four second resonance units 22 are alternately arranged along the circumference of the anchoring region 16.

[0060] The first connecting beams 20 of the two first resonance groups 12 are perpendicular to each other, so that the two first resonance groups 12 form a cross shape, wherein the two first resonance units 18 of any first resonance group 12 are symmetrically arranged with respect to the first connection beam 20 of the other first resonance group 12. The two second resonance groups 14 are X-shaped, so that there is a second resonance unit 22 between every two adjacent first resonance units 18. The four second resonance units 22 of the two second resonance groups 14 are symmetrically arranged with respect to the first connection beam 20 of one of the first resonance groups 12 and the first connection beam 20 of the other first resonance group 12. Each second connection beam 24 forms an angle with the most adjacent first connection beam 20, and multiple second connection beams 24 form multiple angles with corresponding first connection beams 20. Among the multiple angles, any two angles are the same or complementary, that is, the angles between all second connection beams 24 and the first connection beam 20 are the same, or half of the angles are the same and complementary with the other half. Figure 3 In the illustrated embodiment, all included angles are the same, and the included angle between each second connecting beam 24 and the corresponding first connecting beam 20 is 45°.

[0061] It is understandable that when the MEMS resonator 10 needs to meet more usage scenarios with different temperatures, other resonance groups with equivalent crystal orientations different from the first resonance unit 18 and the second resonance unit 22 can be set. At this time, the MEMS resonator 10 has more than three TCF characteristics to meet more usage scenarios with different temperatures.

[0062] For example, in one embodiment, the MEMS resonator 10 further includes a third resonant group, which includes a plurality of third resonant units and third connecting beams connecting the third resonant units to the anchoring region 16. The number of third resonant units is n times the number of first resonant units 18, where n is a positive integer greater than or equal to 1. The third connecting beam of each third resonant unit forms an acute angle with an adjacent first connecting beam 20, thereby making the equivalent crystal orientation of the third resonant unit different from the equivalent crystal orientation of the first resonant unit 18. The angle between the third connecting beam and the adjacent first connecting beam 20 and the angle between the second connecting beam 24 and the adjacent first connecting beam 20 are different and non-complementary, thereby making the equivalent crystal orientation of the third resonant unit different from the crystal orientation of the second resonant unit 22.

[0063] In other embodiments, the shape of the third resonant unit may be different from the shapes of the first resonant unit 18 and the second resonant unit 22 , so that the equivalent crystal orientation of the third resonant unit is different from the equivalent crystal orientation of the first resonant unit 18 and the second resonant unit 22 .

[0064] See also Figures 4 to 10 In one embodiment, both the first resonant unit 18 and the second resonant unit 22 are annular, that is, both the first resonant unit 18 and the second resonant unit 22 are resonant rings, and both the first resonant unit 18 and the second resonant unit 22 include an inner edge 26 and an outer edge 28. The shapes of the first resonant unit 18 and the second resonant unit 22 can be the same or different, that is, the inner edge 26 and the outer edge 28 of the first resonant unit 18 can be the same as or different from the inner edge 26 and the outer edge 28 of the second resonant unit 22. When the two have the same shape, they can match similar resonant frequencies. When the two have different shapes, they can each generate different resonant frequencies.

[0065] The inner edge 26 is one of a circle, an irregular circle, a polygon with rounded corners, and a polygon, and the outer edge 28 is one of a circle, an irregular circle, a polygon with rounded corners, and a polygon. The shape of the inner edge 26 and the shape of the outer edge 28 can be the same or different.

[0066] Optionally, the first resonant unit 18 and the second resonant unit 22 are both resonant rings, and the shapes of the inner edge 26 and the outer edge 28 of the resonant rings may be the same or different. Figures 4 to 10 Several different shapes of resonant rings are shown. Figure 4 In the embodiment shown, the inner edge 26 of the resonant ring is circular, and the outer edge 28 is a polygon with rounded corners; Figure 5 In the embodiment shown, the inner edge 26 of the resonant ring is circular, and the outer edge 28 is an irregular circle; Figure 6 In the embodiment shown, the inner edge 26 of the resonant ring is a rectangle with rounded corners, and the outer edge 28 is an irregular circle; Figure 7 In the embodiment shown, the inner edge 26 of the resonant ring is circular and the outer edge 28 is a regular hexagon; Figure 8 In the embodiment shown, the inner edge 26 of the resonant ring is circular and the outer edge 28 is a regular octagon; Figure 9 In the embodiment shown, the inner edge 26 of the resonant ring is circular and the outer edge 28 is a regular pentagon; Figure 10 In the illustrated embodiment, the inner edge 26 and the outer edge 28 of the resonant ring are identical and are rectangular with rounded corners.

[0067] In one embodiment, the inner edge 26 and outer edge 28 of the second resonant unit 22 have different shapes. A widened region 30 and a narrowed region 32 are formed between the inner edge 26 and the outer edge 28 of the second resonant unit 22. In the radial direction of the second resonant unit 22, the thickness of the widened region 30 is greater than the thickness of the narrowed region 32. Multiple widened regions 30 and multiple narrowed regions 32 are alternately distributed along the circumference of the resonant ring. By configuring the second resonant unit 22 to include the widened region 30 and the narrowed region 32, a design with unequal widths is formed. The equivalent stiffness of the widened region 30 differs from the equivalent stiffness of the narrowed region 32, and the deformation amount and direction of easier deformation of the two regions during resonance will differ. Therefore, the deformation direction of the second resonant unit 22 can be adjusted by designing the widened region 30 and the narrowed region 32, thereby adjusting the equivalent crystal orientation of the second resonant unit 22 and optimizing the TCF characteristics corresponding to the second resonant group 14 of the MEMS resonator 10.

[0068] The inner edge 26 and outer edge 28 of the first resonant unit 18 have different shapes, so widened regions 30 and narrowed regions 32 are formed between the inner edge 26 and the outer edge 28 of the first resonant unit 18, alternating along its axial direction. In the radial direction of the first resonant unit 18, the thickness of the widened region 30 is greater than the thickness of the narrowed region 32, and multiple widened regions 30 and multiple narrowed regions 32 are alternately distributed along the circumference of the resonant ring. By configuring the first resonant unit 18 to include widened regions 30 and narrowed regions 32, a design with unequal widths is formed. The equivalent stiffness of the widened region 30 is different from the equivalent stiffness of the narrowed region 32, and the deformation amount and the direction in which they are more susceptible to deformation will be different during resonance. Therefore, the deformation direction of the first resonant unit 18 can be adjusted by designing the widened region 30 and the narrowed region 32, thereby adjusting the equivalent crystal orientation of the first resonant unit 18 and optimizing the TCF characteristics corresponding to the first resonant group 12 of the MEMS resonator 10.

[0069] See also Figure 1 and Figure 11In one embodiment, the anchoring region 16 includes a central connecting portion 34 and a plurality of reinforcing portions 36 disposed around the connecting portion 34. Each reinforcing portion 36 is connected to the connecting portion 34, and adjacent reinforcing portions 36 are spaced apart. The connecting portion 34 is configured to connect to the first resonant group 12 and the second resonant group 14, and the reinforcing portions 36 are configured to connect to an external object, such as a base substrate 64, to support the first resonant group 12 and the second resonant group 14, so that the first resonant group 12 and the second resonant group 14 are suspended relative to the base substrate 64.

[0070] The ends of the first connecting beam 20 are respectively connected to the first resonant unit 18 and the connecting portion 34, while the ends of the second connecting beam 24 are respectively connected to the second resonant unit 22 and the connecting portion 34. The first connecting beam 20 and the second connecting beam 24 are arranged at intervals along the circumference of the connecting portion 34. A reinforcement portion 36 is provided between any two adjacent second connecting beams 24 and / or between adjacent first connecting beams 20 and second connecting beams 24. Providing multiple first resonant units 18 and multiple second resonant units 22 increases the number of resonant units, thereby increasing the area of the equivalent capacitor of the MEMS resonator 10 and reducing impedance. Furthermore, the multiple first resonant units 18 and multiple second resonant units 22 are respectively connected to the connecting portion 34 of the anchoring region 16, which helps reduce anchor point losses and thereby improves the overall performance of the MEMS resonator 10. At the same time, the reinforcing portion 36 can increase the contact area between the anchoring region 16 and the base substrate 64 so that the anchoring region 16 is fixedly connected to the base substrate 64. Therefore, by setting the anchoring region 16 to include a connecting portion and multiple reinforcing portions 36, it can achieve the effect of reducing the anchor point loss and facilitating the fixing operation of the anchoring region 16.

[0071] The multiple first resonant units 18 of the first resonant group 12 are symmetrically arranged relative to the connection portion 34, and the multiple second resonant units 22 of the second resonant group 14 are symmetrically arranged relative to the connection portion 34. When the MEMS resonator 10 is in operation, the first resonant group 12 and / or the second resonant group 14 resonate relative to the connection portion 34 and the reinforcement portion 36. The multiple first resonant units 18 and the multiple second resonant units 22 are all symmetrically arranged relative to the connection portion 34, so that the energy generated by the multiple first resonant units 18 and the energy generated by the multiple second resonant units 22 during resonance can be better offset at the connection portion 34, thereby reducing losses and improving the overall performance of the MEMS resonator 10.

[0072] The connecting portion 34 includes a base 38 and a plurality of extensions 40 extending outward from the periphery of the base 38. The plurality of extensions 40 are arranged at intervals along the circumference of the base 38. Each extension 40 is fixedly connected to a corresponding first connecting beam 20 or second connecting beam 24. That is, the number of extensions 40 is equal to the sum of the number of first connecting beams 20 and second connecting beams 24. Each first connecting beam 20 and each second connecting beam 24 is respectively connected to a corresponding extension 40, so that all first resonant units 18 and second resonant units 22 are connected to the base 38 through the extensions 40.

[0073] The reinforcement portion 36 is fan-shaped. The end of the reinforcement portion 36 away from the base 38 is located between two adjacent second connecting beams 24 or between adjacent first connecting beams 20 and second connecting beams 24, and is spaced a certain distance therefrom to prevent the reinforcement portion 36 from affecting the resonance of the first connecting beam 20 and the second connecting beam 24. The end of the reinforcement portion 36 near the base 38 is located between two adjacent extensions 40 and is spaced a certain distance from the extensions 40 and the base 38. Fixed beams 42 are provided on opposite sides of the end of the reinforcement portion 36 near the base 38, that is, on opposite sides of the two adjacent extensions 40. Each fixed beam 42 is fixedly connected to an adjacent extension 40. In other words, the opposite sides of the reinforcement portion 36 are fixedly connected to the two adjacent extensions 40 via the fixed beams 42, thereby providing a more balanced support effect for the first resonant group 12 and the second resonant group 14.

[0074] The two fixed beams 42 on opposite sides of the same extension 40 are spaced the same distance from the base 38, thereby symmetrically disposing the two fixed beams 42 on opposite sides of the same extension 40. Preferably, the multiple fixed beams 42 are spaced the same distance from the base 38 and are centrally symmetrically disposed relative to the base 38, thereby connecting the multiple reinforcements 36 to the same equivalent area, further reducing anchor point losses.

[0075] Optionally, the fixed beam 42 may be a curved structure, a serpentine structure, an S-structure, a hollow structure, or the like, so as to reduce the energy transmitted from the first connecting beam 20 and the second connecting beam 24 to the reinforcement portion 36 and further reduce the anchor loss.

[0076] The specific shapes of the first connecting beam 20 and the second connecting beam 24 are not limited. For example, they can be straight beams or special-shaped beams. Moreover, the shapes of the first connecting beam 20 and the second connecting beam 24 can be the same or different.

[0077] exist Figure 1 In the illustrated embodiment, the first connecting beam 20 and the second connecting beam 24 are both straight beams. The straight beam structure is relatively simple, which helps to reduce the difficulty of manufacturing.

[0078] exist Figure 12In the illustrated embodiment, both the first connecting beam 20 and the second connecting beam 24 are provided with a bending structure 44 . The bending structure 44 is located in the middle of the first connecting beam 20 or the second connecting beam 24 , and all the bending structures 44 have the same shape.

[0079] exist Figure 13 In the illustrated embodiment, both the first connecting beam 20 and the second connecting beam 24 are provided with a hollow structure 46 . The hollow structure 46 is located in the middle of the first connecting beam 20 or the second connecting beam 24 , and all the bending structures 44 have the same shape.

[0080] exist Figure 14 In the illustrated embodiment, the first connecting beam 20 is provided with a bending structure 44 located in the middle of the first connecting beam 20 and having the same shape, and the second connecting beam 24 is provided with a hollow structure 46 located in the middle of the second connecting beam 24 and having the same shape.

[0081] exist Figure 15 In the illustrated embodiment, the first connecting beam 20 is provided with a hollow structure 46 located in the middle of the first connecting beam 20 and having the same shape, and the second connecting beam 24 is provided with a bent structure 44 located in the middle of the second connecting beam 24 and having the same shape.

[0082] By providing the bent structure 44 and the hollow structure 46 , the path for the energy generated by the resonant ring during resonance to be transferred to the connecting portion 34 can be extended without increasing the distance between the resonant ring and the connecting portion 34 , thereby reducing the anchor point loss.

[0083] The shape of the bending structure 44 can be S-shaped, serpentine-shaped, etc., and the shape of the hollow structure 46 can be rectangular ring, circular ring, elliptical ring, etc.

[0084] In one embodiment, the resonant frequency of the first resonant unit 18 is different from the resonant frequency of the second resonant unit 22 , and the lengths of the first connecting beam 20 and the second connecting beam 24 are different to match the different resonant frequencies of the first resonant unit 18 and the second resonant unit 22 .

[0085] The resonant frequency of the resonant ring is related to the size, thickness, crystal orientation, material and other factors of the ring. Therefore, the resonant frequencies of the first resonant unit 18 and the second resonant unit 22 can be made different by adopting different methods. For example, Figure 3In the illustrated embodiment, the first resonant unit 18 and the second resonant unit 22 have the same size. However, by making the first resonant unit 18 and the second resonant unit 22 have different crystal orientations or materials, the frequencies of the first resonant unit 18 and the second resonant unit 22 can be made different, thereby making the lengths of the first connecting beam 20 and the second connecting beam 24 different. In the embodiment shown in FIG16 , the sizes of the first resonant ring and the second resonant ring are different, thereby making the resonant frequencies of the first resonant unit 18 and the second resonant unit 22, as well as the lengths of the first connecting beam 20 and the second connecting beam 24 different.

[0086] See also Figure 1 In one embodiment, the MEMS resonator 10 further includes a driving electrode 48 and a sensing electrode 50. Each first resonant unit 18 and each second resonant unit 22 is correspondingly provided with a driving electrode 48 and a sensing electrode 50. That is, a driving electrode 48 is provided on one radial side of each resonant ring and a sensing electrode 50 is provided on the other radial side. Both the driving electrode 48 and the sensing electrode 50 are spaced a certain distance from the corresponding resonant ring. The driving electrode 48 is used to drive the resonance of the first resonant unit 18 or the second resonant unit 22, and the sensing electrode 50 is used to sense the resonance of the first resonant unit 18 or the second resonant unit 22.

[0087] A driving electrode 48 or a sensing electrode 50 is provided on the outside of each resonant ring, and the two electrodes located on the outside of any two adjacent resonant rings are spaced apart from each other. The electrodes located on the outside of the resonant rings are provided with a protrusion extending outward, and a contact for electrical connection is provided on the protrusion. The protrusion can play a widening role, making it convenient to set a contact on the electrode.

[0088] The anchoring region 16, the first resonant group 12 and the second resonant group 14 are electrically connected, and a DC bias DC signal is applied through the anchoring region 16. Therefore, the electric potentials on the first resonant unit 18, the second resonant unit 22, the first connecting beam 20, the second connecting beam 24 and the anchoring region 16 are the same. The driving signal, that is, the AC voltage, is applied through the driving electrode 48, thereby forming a changing electrostatic force between the driving structure and the first resonant unit 18 or the second resonant unit 22 to drive the first resonant unit 18 or the second resonant unit 22 to resonate. After resonance occurs, the capacitance between the sensing electrode 50 and the first resonant unit 18 or the second resonant unit 22 changes, thereby sensing the resonance of the first resonant unit 18 or the second resonant unit 22.

[0089] like Figure 17As shown, in one embodiment, the number of the first resonant units 18 is two, and the number of the second resonant units 22 is four, wherein two second resonant units 22 are located on one side of the first resonant group 12, and the other two second resonant units 22 are located on the other side of the first resonant group 12, wherein one first resonant unit 18 and two second resonant units 22 located on the same side form a group of resonant mechanisms 60, and another first resonant unit 18 and the other two second resonant units 22 form another resonant mechanism 60.

[0090] The number of driving electrodes 48 and sensing electrodes 50 is six. Each resonant ring corresponds to one driving electrode 48 and one sensing electrode 50. The six driving electrodes 48 are divided into three positive driving electrodes 52 and three negative driving electrodes 54. The three positive sensing electrodes 50 are divided into three positive sensing electrodes 56 and three negative sensing electrodes 58.

[0091] A first resonant unit 18 and two second resonant units 22 of a resonant mechanism 60 are each provided with a positive driving electrode 52 on their outer sides and a negative sensing electrode 58 on their inner sides. The three positive driving electrodes 52 are spaced apart and electrically connected in sequence, and the three negative sensing electrodes 58 are electrically connected in sequence. The driving signal for the resonant mechanism 60 of this group is applied to the positive driving electrodes 52, and the sensing signal is applied to the negative sensing electrodes 58. A first resonant unit 18 and two second resonant units 22 of another resonant mechanism 60 are each provided with a positive sensing electrode 56 on their outer sides and a negative driving electrode 54 on their inner sides. The three positive sensing electrodes 56 are spaced apart and electrically connected in sequence, and the three negative driving electrodes 54 are electrically connected in sequence. The driving signal for the resonant mechanism 60 of this group is applied to the negative driving electrode 54, and the sensing signal is applied to the positive sensing electrode 56. This ensures that the driving signals and sensing signals of the two resonant mechanisms 60 have opposite phases, and the driving signals of the two resonant mechanisms 60 are applied to different driving electrodes 48, and the sensing signals are applied to different sensing electrodes 50, respectively.

[0092] In other embodiments, the driving electrodes 48 and the sensing electrodes 50 may have different distributions and connection methods, thereby forming different driving methods.

[0093] exist Figure 18 In the illustrated embodiment, the MEMS resonator 10 adopts a single-port driving mode, wherein a driving electrode 48 is provided on the outer side of each first resonant unit 18 and each second resonant unit 22, respectively, and the plurality of driving electrodes 48 are spaced apart from each other and electrically connected in sequence. A sensing electrode 50 is provided on the inner side of each first resonant unit 18 and each second resonant unit 22, respectively, and the plurality of sensing electrodes 50 are electrically connected in sequence. The driving signals of all the first resonant units 18 and the second resonant units 22 are applied to the same driving electrode 48, and the sensing signals are applied to the same sensing electrode 50. Figure 19 for Figure 17 Dual ports shown, and Figure 18 FIG. 1 is a schematic diagram of the working mode of the MEMS resonator 10 in a single-port driving mode.

[0094] exist Figure 20 In the illustrated embodiment, the MEMS resonator 10 adopts a multi-port driving mode, the number of the first resonant units 18 is two, and the number of the second resonant units 22 is four, wherein two second resonant units 22 are located on one side of the first resonant group 12, and the other two second resonant units 22 are located on the other side of the first resonant group 12. The two first resonant units 18 respectively form two resonant structures 62, the two second resonant units 22 located on one side of the first resonant group 12 form one resonant structure 62, and the two second resonant units 22 located on the other side of the first resonant group 12 form another resonant structure 62, that is, the two first resonant units 18 and the four second resonant units 22 respectively form two resonant structures 62.

[0095] The number of driving electrodes 48 and sensing electrodes 50 is six. Each resonant ring corresponds to one driving electrode 48 and one sensing electrode 50. The six driving electrodes 48 are divided into three positive driving electrodes 52 and three negative driving electrodes 54. The three positive sensing electrodes 50 are divided into three positive sensing electrodes 56 and three negative sensing electrodes 58.

[0096] In the two resonant structures 62 formed by the first resonant units 18, a negative driving electrode 54 is provided on the inner side of one of the first resonant units 18 and a positive sensing electrode 56 is provided on the outer side, and a positive driving electrode 52 is provided on the outer side of the other first resonant unit 18 and a negative sensing electrode 58 is provided on the inner side. The driving signals and sensing signals of the two resonant structures 62 have opposite phases and are applied to different driving electrodes 48 and sensing signals, respectively.

[0097] In the two resonant structures 62 composed of four second resonant units 22, the two second resonant units 22 of one resonant structure 62 are respectively provided with positive driving electrodes 52 on the outside and negative sensing electrodes 58 on the inside, the two positive driving electrodes 52 are electrically connected, and the two negative driving electrodes 54 are electrically connected; the two second resonant units 22 of the other resonant structure 62 are respectively provided with positive sensing electrodes 56 on the outside and negative driving electrodes 54 on the inside, the two positive sensing electrodes 56 are electrically connected, and the two negative driving electrodes 54 are electrically connected. The driving signals and sensing signals of the two resonant structures 62 have opposite phases and are applied to different driving electrodes 48 and sensing signals, respectively.

[0098] exist Figure 21In the illustrated embodiment, the MEMS resonator 10 adopts another multi-port driving mode, wherein the outer sides of the plurality of first resonant units 18 are respectively provided with driving electrodes 48 and are electrically connected in sequence, and the inner sides are respectively provided with sensing electrodes 50 and are electrically connected in sequence, and the outer sides of the plurality of second resonant units 22 are respectively provided with driving electrodes 48 and are electrically connected in sequence, and the inner sides are respectively provided with sensing electrodes 50 and are electrically connected in sequence, and the plurality of driving electrodes 48 and the plurality of sensing electrodes 50 corresponding to the plurality of first resonant units 18 correspond to a group of driving signals and a group of sensing signals, respectively, and the plurality of driving electrodes 48 and the plurality of sensing electrodes 50 corresponding to the plurality of second resonant units 22 correspond to another group of driving signals and another group of sensing signals, respectively. Figure 22 for Figure 21 as well as Figure 22 Schematic diagram of the working mode of the MEMS resonator with multi-port driving mode. Figure 24 For MEMS resonators in Figure 19 as well as Figure 22 From the TCF curve diagram under the working mode shown, it can be seen that the TCF characteristics of the MEMS resonator will be different under different working modes.

[0099] It can be understood that the MEMS resonator can also form another driving mode by changing the relative position and / or connection relationship of the electrodes. For example, when the number of resonant rings is three, the three adjacent resonant rings can form a resonant mechanism, and the other three resonant rings can form another resonant mechanism. The three electrodes on the outer side of the resonant ring of the same resonant mechanism are electrically connected in sequence, and the three electrodes on the inner side are electrically connected in sequence, forming a resonant mechanism as shown in FIG. Figure 23 The diagram shows a working mode in which the vibration phases of the three resonant rings of the same resonant mechanism are the same, and the resonant phases of the resonant rings of different resonant structures are opposite.

[0100] See also Figure 25 In one embodiment, the MEMS resonator 10 includes a base substrate 64, a device layer 66, and a spacer layer 68. The spacer layer 68 is located between the base substrate 64 and the device layer 66 to separate the base substrate 64 from the device layer 66. The first resonating unit 18, the first connecting beam 20, the second resonating unit 22, the second connecting beam 24, the driving electrode 48, and the sensing electrode 50 are located in the device layer 66 or are part of the device layer 66. The driving electrode 48, the sensing electrode 50, and the anchor region 16 are respectively fixed to the base substrate 64 via the corresponding spacer layer 68.

[0101] Optionally, the device layer 66 and the substrate layer are made of single crystal silicon, and the separation layer 68 is made of silicon oxide, so that the separation layer 68 can not only separate the device layer 66 from the base substrate 64, but also play an insulating role.

[0102] In other embodiments, the device layer 66 and the base substrate 64 may also be made of other semiconductor single crystal or polycrystalline materials such as polysilicon, germanium, silicon nitride, gallium nitride, silicon carbide, etc. The device layer 66 and the base substrate 64 may be made of one or more of the materials mentioned above.

[0103] See also Figure 26 In a MEMS resonator 70 provided in another embodiment of the present invention, both the first resonant unit and the second resonant unit are resonant rings 72. The MEMS resonator 70 further includes electrode regions corresponding to the resonant rings 72. The electrode regions include a first electrode region and a second electrode region. The first electrode region is located outside the resonant ring 72 and spaced apart from the outer edge of the resonant ring 72. The second electrode region is located inside the resonant ring 72 and spaced apart from the inner edge of the resonant ring 72. That is, the first resonant unit and the second resonant unit are respectively provided with a first electrode region on their outer sides and a second electrode region on their inner sides.

[0104] The side of the electrode region close to the base substrate is flat and arranged parallel to the base substrate, so that the distances between the first electrode region and the second electrode region and the base substrate are the same, that is, the capacitance gaps between the first electrode region and the second electrode region and the base substrate are the same.

[0105] Positive electrodes are partially provided in the first electrode region and negative electrodes are partially provided in the second electrode region. The positive electrodes include positive drive electrodes 74 and / or positive sensing electrodes 76, and the negative electrodes include negative drive electrodes 78 and / or negative sensing electrodes 80. The positive drive electrodes 74 and negative drive electrodes 78 are respectively used to drive the corresponding resonant ring 72 to resonate. The two electrodes are of the same type and have opposite phases. The positive sensing electrodes 76 and negative sensing electrodes 80 are respectively used to sense the resonance of the corresponding resonant ring 72. The two electrodes are of the same type and have opposite phases. The capacitance area formed by the positive electrode relative to the base substrate is the same as the capacitance area formed by the negative electrode relative to the base substrate. That is, the capacitance area formed by the same type of positive and negative electrodes relative to the base substrate is the same. This can mean that the capacitance area of the positive drive electrode 74 and the negative drive electrode 78 is the same, or the capacitance area of the positive sensing electrode 76 and the negative sensing electrode 80 is the same, or the capacitance area of the positive drive electrode 74 and the negative drive electrode 78 is the same, and the capacitance area of the positive sensing electrode 76 and the negative sensing electrode 80 is the same.

[0106] Since the capacitance area of the positive electrode is the same as the capacitance area of the negative electrode, when the signal strength applied to the positive electrode and negative electrode of the same type is the same and the phase is opposite, the parasitic capacitance generated by the positive electrode and the base substrate and the parasitic capacitance generated by the negative electrode and the base substrate can be made the same in size, and the parasitic capacitance generated by the positive electrode and the parasitic capacitance generated by the negative electrode can be offset, thereby reducing the parasitic capacitance of the MEMS resonator 70, improving the signal-to-noise ratio and the stability of the high-frequency output, and improving the overall performance of the MEMS resonator 70.

[0107] In an optional example, the positive electrode includes a positive driving electrode 74 and a positive sensing electrode 76, and the negative electrode includes a negative driving electrode 78 and a negative sensing electrode 80. The capacitance area of the positive driving electrode 74 is the same as the capacitance area of the negative driving electrode 78. When the driving signal strengths applied to the positive driving electrode 74 and the negative driving electrode 78 are the same and the phases are opposite, the parasitic capacitance generated by the positive driving electrode 74 and the parasitic capacitance generated by the negative driving electrode 78 are the same in magnitude and can offset each other; the capacitance area of the positive sensing electrode 76 is the same as the capacitance area of the negative sensing electrode 80. When the sensing signal strengths applied to the positive sensing electrode 76 and the negative sensing electrode 80 are the same and the phases are opposite, the parasitic capacitance generated by the positive sensing electrode 76 and the parasitic capacitance generated by the negative sensing electrode 80 are the same in magnitude and can offset each other, thereby reducing the parasitic capacitance of the MEMS resonator 70.

[0108] The number of positive driving electrodes 74 and the number of negative driving electrodes 78 are the same and both are multiple, the number of positive sensing electrodes 76 and the number of negative sensing electrodes 80 are the same and both are multiple, and the number of positive driving electrodes 74 is the same as the number of positive sensing electrodes 76, and each resonant ring 72 corresponds to one driving electrode and one sensing electrode.

[0109] The capacitance area of the positive drive electrode 74 is the same as the capacitance area of the negative drive electrode 78. This may mean that the sum of the capacitance areas of multiple positive drive electrodes 74 is the same as the sum of the capacitance areas of multiple negative drive electrodes 78, while the capacitance areas between some positive drive electrodes 74 and / or the capacitance areas between some negative drive electrodes 78 are different. Alternatively, this may mean that the capacitance area of each positive drive electrode 74 is the same, the capacitance area of each negative drive electrode 78 is the same, and the capacitance area of each positive drive electrode 74 is the same as the capacitance area of the negative drive electrode 78. Similarly, the capacitance area of the positive sensing electrode 76 and the negative sensing electrode 80 is the same. This may mean that the total capacitance area of the positive sensing electrode 76 is the same as the total capacitance area of the negative sensing electrode 80, or that the capacitance area of any one positive sensing electrode 76 is the same as the capacitance area of the negative sensing electrode 80. For details, please refer to the description of the positive and negative drive electrodes 78, which will not be repeated here.

[0110] Positive drive electrode 74 and negative drive electrode 78 are located on the same side of resonant ring 72, and positive sense electrode 76 and negative sense electrode 80 are located on the other side of resonant ring 72. That is, positive drive electrode 74 and negative drive electrode 78 are both located inside resonant ring 72, and positive sense electrode 76 and negative sense electrode 80 are both located outside resonant ring 72, or positive drive electrode 74 and negative drive electrode 78 are both located outside resonant ring 72, and positive sense electrode 76 and negative sense electrode 80 are both located inside resonant ring 72. The capacitance area of any positive drive electrode 74 is the same as the capacitance area of the negative drive electrode 78, and the capacitance area of any positive sense electrode 76 is the same as the capacitance area of the negative sense electrode 80. Therefore, the parasitic capacitance generated by each positive drive electrode 74 is the same as the parasitic capacitance generated by the negative drive electrode 78, and the parasitic capacitance generated by each positive sense electrode 76 is the same as the parasitic capacitance generated by the negative sense electrode 80.

[0111] Positive drive electrode 74 and negative drive electrode 78 have the same shape and size. If the capacitive gaps between positive drive electrode 74 and negative drive electrode 78 and the base substrate and the dielectric constants are the same, the capacitive area of positive drive electrode 74 is the same as the capacitive area of negative drive electrode 78, so that the parasitic capacitances of the two electrodes are the same. Similarly, positive sense electrode 76 and negative sense electrode 80 have the same shape and size. If the capacitive gaps between positive sense electrode 76 and negative sense electrode 80 and the base substrate and the dielectric constants are the same, the capacitive area of positive sense electrode 76 is the same as the capacitive area of negative sense electrode 80, so that the parasitic capacitances of the two electrodes are the same.

[0112] The dielectric constant between the electrode and the base substrate includes the dielectric constant of the separation layer located between the electrode and the base substrate, and the dielectric constant of the partial device layer located between the electrode and the base substrate. The thickness of the separation layer between different electrodes and the base substrate is the same, and the thickness of the partial device layer is the same, so that the parasitic capacitance of different electrodes with the same area relative to the base substrate is the same.

[0113] The positive driving electrode 74 and the negative driving electrode 78 are electrodes of the same type and are both used to drive the resonant ring 72 to resonate. The positive sensing electrode 76 and the negative sensing electrode 80 are electrodes of the same type and are both used to sense the resonance of the resonant ring 72. The electrodes of the same type are respectively located on the same side of the multiple resonant rings 72, and the electrodes of different types are respectively located on opposite sides of the multiple resonant rings 72. During the production process, the positive and negative electrodes of the same type can be prepared by the same production equipment so that they have the same shape and size. In this way, the capacitance area of all electrodes of the same type can be the same to meet the condition of the same capacitance area, thereby avoiding the problem that the positive and negative electrodes of the same type have different shapes due to being located on different sides of the resonant ring 72, and the need to specially adjust their shapes to meet the same capacitance, which helps to reduce the difficulty of production.

[0114] The above embodiments are only preferred embodiments of the present invention and cannot be used to limit the scope of protection of the present invention. Any non-substantial changes and replacements made by technicians in this field on the basis of the present invention fall within the scope of protection required by the present invention.

Claims

1. A MEMS resonator, characterized in that: include: An anchoring area, comprising a central connecting portion and a plurality of reinforcing portions arranged around the connecting portion, with adjacent reinforcing portions spaced apart and the reinforcing portions respectively connected to the connecting portion; a first resonance group comprising a plurality of first resonance units disposed outside the anchoring region and a first connection beam connecting the first resonance units to the connection portion; a second resonance group, comprising a plurality of second resonance units disposed outside the anchoring region, and a second connecting beam connecting the second resonance units to the connecting portion, wherein the number of the second resonance units is n times that of the first resonance units, where n is a positive integer greater than or equal to 1; Any first resonant unit is adjacent to two second resonant units respectively, the angle between each second connecting beam and the adjacent first connecting beam is an acute angle, and the equivalent crystal orientation of the first resonant unit is different from the equivalent crystal orientation of the second resonant unit.

2. The MEMS resonator according to claim 1, wherein The included angle between the second connecting beam and the adjacent first connecting beam is 30° to 60°.

3. The MEMS resonator according to claim 1, wherein: The number of the second resonant units is twice that of the first resonant units, and any two of the multiple angles formed between the second connecting beam of each second resonant unit and the most adjacent first connecting beam are the same or complementary to each other; and / or The shape of the second resonance unit is different from that of the first resonance unit.

4. The MEMS resonator according to claim 3, wherein: There is one first resonance group, including two first resonance units, which are symmetrically arranged on opposite sides of the connecting portion; there are two second resonance groups, each of which includes two second resonance units, and the second resonance units of the two second resonance groups are symmetrically arranged relative to the first resonance group; The included angle between each of the second connecting beams and the adjacent first connecting beam is 30° or 60°.

5. The MEMS resonator according to claim 1, wherein: The device further includes a third resonance group, the third resonance group including a plurality of third resonance units and a third connecting beam connecting the three resonance units to the connecting portion, wherein the number of the third resonance units is n times that of the first resonance units, where n is a positive integer greater than or equal to 1; and the third connecting beam of each third resonance unit forms an acute angle with an adjacent first connecting beam. The angle between the third connecting beam and the adjacent first connecting beam and the angle between the second connecting beam and the adjacent first connecting beam are different and non-complementary; and / or the shape of the third resonant unit is different from that of the second resonant unit and the first resonant unit.

6. The MEMS resonator according to claim 1, wherein: The number of the first resonance groups and the number of the second resonance groups are both two, each first resonance group includes two first resonance units, each second resonance group includes two second resonance units, the first connecting beams of the two first resonance groups are perpendicular to each other, and among the multiple angles formed by the second connecting beam of each second resonance unit and the most adjacent first connecting beam, any two angles are the same or complementary.

7. The MEMS resonator according to claim 1, wherein: The first resonant unit is annular, comprising an inner edge and an outer edge, wherein widened areas and narrowed areas alternately arranged along the circumference of the first resonant unit are formed between the inner edge and the outer edge; and / or, The second resonance unit is ring-shaped and includes an inner edge and an outer edge. Widened areas and narrowed areas alternately arranged along the circumference of the second resonance unit are formed between the inner edge and the outer edge.

8. The MEMS resonator according to claim 1, wherein: The connecting portion includes a base portion and a plurality of extension portions extending outward from a periphery of the base portion, wherein the plurality of extension portions are arranged at intervals along the circumference of the base portion, and each of the extension portions is fixedly connected to a corresponding first connecting beam or second connecting beam; One end of the reinforcing portion close to the base is located between two adjacent extension portions, and fixing beams are respectively provided on opposite sides of one end of the reinforcing portion close to the base, and each fixing beam is fixedly connected to the adjacent extension portion.

9. The MEMS resonator according to claim 8, wherein: The two fixing beams located on opposite sides of the same extension portion are symmetrically arranged; and / or, The distances between the plurality of fixing beams and the base are all the same, and the plurality of fixing beams are centrally symmetrically arranged relative to the base.

10. The MEMS resonator according to claim 1, wherein: The resonant frequency of the first resonant unit is different from the resonant frequency of the second resonant unit, and the length of the first connecting beam is different from the length of the second connecting beam; and / or, The first connecting beam and the second connecting beam are both provided with a bending structure or a hollow structure, or one of the first connecting beam and the second connecting beam is provided with a bending structure and the other is provided with a hollow structure.

11. The MEMS resonator according to any one of claims 1 to 10, characterized in that: The first resonant unit and the second resonant unit are both resonant rings, and the electrode region includes a first electrode region provided outside the resonant ring and spaced apart from the outer edge of the resonant ring, and a second electrode region provided inside the resonant ring and spaced apart from the inner edge of the resonant ring; Positive electrodes are partially set in the first electrode area and negative electrodes are partially set in the second electrode area, the positive electrodes include positive driving electrodes and / or positive sensing electrodes, the negative electrodes include negative driving electrodes and / or negative sensing electrodes, and the capacitance area formed by the positive electrodes relative to the base substrate is the same as the capacitance area formed by the negative electrodes relative to the base substrate.

12. The MEMS resonator according to claim 11, wherein: The positive driving electrode and the negative driving electrode are located on the same side of the resonant ring, and the positive driving electrode and the negative driving electrode have the same shape and size, so that the capacitance area of any positive driving electrode is the same as the capacitance area of the negative driving electrode; and / or, The positive sensing electrode and the negative sensing electrode are located on the same side of the resonant ring, and have the same shape and size as the negative sensing electrode, so that the capacitance area of any positive sensing electrode is the same as the capacitance area of the negative sensing electrode.

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