Solar cell, preparation method thereof and photoelectric device

Abstract

The invention provides a solar cell, a preparation method thereof and a photoelectric device. The solar cell comprises a substrate electrode, a hole transport layer, a two-dimensional material light absorption layer, an electron transport layer and a top electrode which are sequentially stacked, the two-dimensional material light absorption layer is a ReSe2 thin film, and the number of layers of ReSe2 materials in the ReSe2 thin film is 3-53. According to the invention, the ReSe2 thin film with 3-50 layers of the ReSe2 material is used as the light absorption layer, and the direct band gap characteristic is maintained, so that the solar cell has high photoelectric conversion efficiency, high stability and low cost, and has a wide application prospect in the field of photoelectric devices.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a solar cell and a preparation method thereof, and a photoelectric device. Background Art

[0002] With the intensifying global energy crisis and increasingly serious environmental pollution, solar energy as a clean, renewable energy source has garnered widespread attention. While traditional silicon-based solar cells are technologically mature, they suffer from drawbacks such as high cost, complex fabrication, and heavy weight. In recent years, thin-film solar cells based on two-dimensional materials have become a research hotspot due to their advantages such as lightness, ease of fabrication, and low cost.

[0003] Most existing solar cells are based on materials such as MoS2 and WSe2, which transform from direct bandgap semiconductors to indirect bandgap semiconductors when the number of layers increases, which limits their application in optoelectronic devices.

[0004] In view of this, this application is hereby filed. Summary of the Invention

[0005] The main purpose of this application is to provide a solar cell to solve the problem that most existing solar cells are based on materials such as MoS2 and WSe2, which will transform from direct bandgap semiconductors to indirect bandgap semiconductors when the number of layers increases, resulting in their application in optoelectronic devices being limited.

[0006] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a solar cell is provided, which includes a substrate electrode, a hole transport layer, a two-dimensional material absorption layer, an electron transport layer and a top electrode stacked in sequence; wherein, the two-dimensional material absorption layer is a ReSe2 thin film, the thickness of the ReSe2 thin film is 2-45nm, and the number of layers of ReSe2 material in the ReSe2 thin film is 3-53.

[0007] Furthermore, the number of layers of ReSe2 material in the ReSe2 film is 3-35, preferably 4-12.

[0008] Furthermore, the thickness of the ReSe2 film is 2-45 nm, preferably 3-30 nm, and more preferably 3-10 nm.

[0009] Furthermore, the substrate electrode includes a transparent conductive glass substrate and a transparent conductive oxide attached to the transparent conductive glass substrate. The transparent conductive oxide includes at least one of indium tin oxide, fluorine-doped tin oxide, and aluminum-doped zinc oxide, preferably indium tin oxide.

[0010] Furthermore, the thickness of the substrate electrode is 100-400 nm, preferably 250-350 nm, and more preferably 300 nm.

[0011] Furthermore, the hole transport layer material includes NiO x , CuSCN or CuI, wherein x is 1-1.5, and the material of the hole transport layer is preferably NiO x .

[0012] Furthermore, the thickness of the hole transport layer is 10-40 nm, preferably 25-35 nm, and more preferably 30 nm.

[0013] Furthermore, the material of the electron transport layer includes TiO2, SnO2 or a fullerene derivative, preferably fullerene C 60 .

[0014] Furthermore, the thickness of the electron transport layer is 10-100 nm, preferably 20-80 nm, more preferably 30-60 nm, and most preferably 30-50 nm.

[0015] Furthermore, the material of the top electrode includes at least one of gold, silver, copper or amorphous carbon, preferably copper.

[0016] Furthermore, the thickness of the top electrode is 50-500 nm, preferably 100-400 nm, and more preferably 200-300 nm.

[0017] According to the second aspect of the present application, the present application also provides a method for preparing a solar cell, which includes the following steps: providing a substrate electrode, depositing a hole transport layer on the surface of the substrate electrode, transferring the ReSe2 thin film to the surface of the hole transport layer, depositing an electron transport layer on the surface of the ReSe2 thin film, and depositing a top electrode on the surface of the electron deposition layer to obtain a solar cell.

[0018] Furthermore, the substrate electrode is cleaned and dried with an organic solvent and water in sequence, and then a hole transport layer is deposited on the surface of the substrate electrode.

[0019] Furthermore, the hole transport layer is formed by physical vapor deposition.

[0020] Furthermore, the ReSe2 film is transferred to the surface of the hole transport layer, placed at 90-110° C. for 15-25 minutes, and then the electron transport layer is deposited on the surface of the ReSe2 film.

[0021] Furthermore, the electron transport layer is formed by chemical vapor deposition.

[0022] Furthermore, the top electrode is formed by thermal evaporation deposition.

[0023] According to a third aspect of the present application, a photoelectric device is provided, which includes the solar cell provided by the first aspect or the solar cell obtained by the preparation method provided by the second aspect.

[0024] By applying the technical solution of the present application, a ReSe2 thin film with 3-53 layers of ReSe2 material is used as the light-absorbing layer, maintaining the direct band gap characteristics, so that the solar cell has high photoelectric conversion efficiency, high stability and low cost, and has broad application prospects in the field of optoelectronic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The drawings that constitute part of this application are used to provide a further understanding of this application. The illustrative embodiments of this application and their descriptions are used to explain this application and do not constitute an improper limitation on this application. In the drawings:

[0026] Figure 1 The graph shows the relationship between the open circuit voltage and the short circuit current density of the solar cell provided in Example 1. DETAILED DESCRIPTION

[0027] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. The present application will be described in detail below with reference to the embodiments.

[0028] As analyzed in the background of this application, most existing solar cells are based on materials such as MoS2 and WSe2. However, these materials transform from direct bandgap semiconductors to indirect bandgap semiconductors as the number of layers increases, which limits the application of these solar cells in optoelectronic devices. To expand the application of solar cells in optoelectronic devices, this application provides a solar cell, a method for preparing the same, and an optoelectronic device.

[0029] In the first typical embodiment of the present application, the present application provides a solar cell, which includes a substrate electrode, a hole transport layer, a two-dimensional material absorption layer, an electron transport layer and a top electrode stacked in sequence, wherein the two-dimensional material absorption layer is a ReSe2 thin film, and the number of layers of ReSe2 material in the ReSe2 thin film is 3-53.

[0030] ReSe2, as a typical transition metal chalcogenide (TMDs), has unique physical and chemical properties. ReSe2 forms bonds within the layer through covalent bonds and between layers through van der Waals forces, so thin layers of materials of different thicknesses can be obtained from bulk materials by mechanical exfoliation. ReSe2 has many unique properties, such as the quantum confinement effect of thin-layer two-dimensional materials, and its band gap is related to the number of material layers. Therefore, its band gap can be adjusted by changing the number of layers of ReSe2 materials to meet the needs of practical applications. Thanks to its excellent optoelectronic properties, ReSe2 has shown good application potential in optoelectronic devices including photodetectors, light-emitting devices, Hall effect devices and solar cells. ReSe2 maintains direct band gap characteristics even when the number of layers increases. The optical band gap of thick layer (3-53 layers) ReSe2 material is approximately 1.2-1.25eV, which is close to the band gap of crystalline silicon solar cells (approximately 1.1eV), which gives ReSe2 materials unique advantages in the application of solar cells.

[0031] This application uses a ReSe2 thin film with 3-53 layers of ReSe2 material as the light-absorbing layer, maintaining the direct band gap characteristics, so that the solar cell has high photoelectric conversion efficiency, high stability and low cost, and has broad application prospects in the field of optoelectronic devices.

[0032] In this application, the number of layers of ReSe2 material in the ReSe2 film is 3, 4, 5, 6, 7, 8, 9, 10, 12, 15, 20, 30, 35, 40, 50, 53 or a range consisting of any two values.

[0033] In some embodiments, when the number of layers of ReSe2 material in the ReSe2 film is 3-35, the solar cell has relatively excellent photoelectric conversion efficiency and stability, especially when the number of layers of ReSe2 material in the ReSe2 film is 4-12, the photoelectric conversion efficiency and stability of the solar cell are even better.

[0034] In some embodiments, the thickness of the ReSe2 film is 2-45 nm, especially when the thickness of the ReSe2 film is 3-30 nm, which is more conducive to improving the stability and photoelectric conversion efficiency of the solar cell, especially when the thickness of the ReSe2 film is 3-10 nm, the stability of the solar cell is further improved, and the photoelectric conversion efficiency and stability of the solar cell are higher.

[0035] In this application, the thickness of the ReSe2 film is 2nm, 2.5nm, 3nm, 4nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm or a range of any two values.

[0036] In some embodiments, the substrate electrode includes a transparent conductive glass substrate and a transparent conductive oxide attached to the transparent conductive glass substrate, wherein the transparent conductive oxide includes any one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), and aluminum-doped zinc oxide (AZO). In particular, when the transparent conductive oxide is indium tin oxide (ITO), it is more conducive to improving the stability of the solar cell.

[0037] In some embodiments, the thickness of the substrate electrode is 100-400nm, which is more conducive to improving the stability of the solar cell. Especially when the thickness of the substrate electrode is 250-350nm, the stability of the solar cell is even better. In particular, when the thickness of the substrate electrode is 300nm, the stability of the solar cell is the best.

[0038] Typically, but not limited to, the thickness of the substrate electrode is 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, or a range consisting of any two of these values.

[0039] In some embodiments, the material of the hole transport layer includes NiO x (x is 1-1.5), CuSCN or CuI, it is beneficial to improve the photoelectric conversion efficiency of solar cells. Especially when the hole transport layer material is NiO x When (x is 1-1.5), the solar cell has excellent photoelectric conversion efficiency and is more conducive to reducing costs.

[0040] In some embodiments, when the thickness of the hole transport layer is 10-40 nm, the solar cell has excellent photoelectric conversion efficiency, especially when the thickness of the hole transport layer is 25-35 nm, which is more conducive to improving the photoelectric conversion efficiency while reducing costs. In particular, when the thickness of the hole transport layer is 30 nm, the solar cell is more conducive to balancing lower preparation costs and better photoelectric conversion efficiency and stability.

[0041] Typically, but not limited to, the thickness of the hole transport layer is 10 nm, 15 nm, 20 nm, 25 nm, 28 nm, 30 nm, 32 nm, 35 nm, 40 nm, or a range consisting of any two of these values.

[0042] In some embodiments, the material of the electron transport layer includes any one or more of TiO2, SnO2 or fullerene derivatives. 60 When the electron transport layer has a better electron transport efficiency.

[0043] Fullerene derivatives refer to derivatives of carbon 60 molecules or other fullerene molecules. Fullerene is a molecule composed of carbon atoms. The spherical fullerene molecule C 60 Known for its soccer ball-like structure, it is also known as a "buckyball." 60 It is composed of 60 carbon atoms arranged in pentagons and hexagons to form a closed sphere. 60 , and other types of fullerenes, such as C 70 , they are composed of 70 carbon atoms and are shaped like an oval.

[0044] In some embodiments, the thickness of the electron transport layer is 10-100 nm, which is more conducive to improving the stability of the solar cell. Especially when the thickness of the electron transport layer is 20-80 nm, it is more conducive to improving the photoelectric conversion efficiency of the solar cell. In particular, when the thickness of the electron transport layer is 30-60 nm, it is more conducive to taking into account excellent photoelectric conversion efficiency and stability. When the thickness of the electron transport layer is 30-50 nm, the solar cell has better photoelectric conversion rate and stability while being more conducive to reducing costs.

[0045] Typically, but not limited to, the thickness of the electron transport layer is 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 90 nm, 100 nm, or a range consisting of any two values.

[0046] In some embodiments, the material of the top electrode includes any one or more of gold, silver, copper, or amorphous carbon. In particular, when the top electrode is copper, it is more conducive to reducing costs while taking into account the stability of the solar cell.

[0047] In some embodiments, when the thickness of the top electrode is 50-500nm, it is more conducive to improving the photoelectric conversion efficiency of the solar cell, especially when the thickness of the top electrode is 100-400nm, the solar cell is more conducive to taking into account excellent stability and photoelectric conversion efficiency, especially when the thickness of the top electrode is 200-300nm, it is more conducive to improving stability and photoelectric conversion efficiency, and is conducive to reducing costs.

[0048] Typically, but not limited to, the thickness of the top electrode is 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, or a range consisting of any two of these values.

[0049] In a second typical embodiment of the present application, a method for preparing the above-mentioned solar cell is provided, which includes the following steps: step S1, providing a substrate electrode, and depositing a hole transport layer on the surface of the substrate electrode; step S2, transferring the ReSe2 film to the surface of the hole transport layer away from the substrate electrode; step S3, depositing an electron transport layer on the surface of the ReSe2 film away from the hole transport layer; step S4, depositing a top electrode on the surface of the electron transport layer away from the ReSe2 film to obtain a solar cell.

[0050] The solar cell manufacturing method provided in the present application has a simple process and is easy to operate, thereby facilitating large-scale production and further reducing manufacturing costs.

[0051] In some embodiments, a ReSe2 thin film is obtained by stripping a bulk ReSe2 single crystal. Specifically, a tape stripping technique is used, in which a ReSe2 single crystal is placed on a layer of tape, which is then covered with another layer of tape. The ReSe2 single crystal is stripped by gently pressing and slowly peeling off the top layer of tape to obtain a ReSe2 thin film.

[0052] In some embodiments, in step S1, the substrate electrode is first cleaned with an organic solvent and water to remove impurities and oil on the surface, and then dried to ensure the cleanliness of the substrate electrode. The drying method is, for example, to dry the surface of the substrate electrode using a dust-free cloth or a nitrogen gun.

[0053] The above-mentioned organic solvents are commonly used solvents in the art, including but not limited to acetone, isopropyl alcohol, etc.

[0054] In some embodiments, in step S1, the hole transport layer is formed by physical vapor deposition to improve the stability of the hole transport layer and the substrate electrode. In some specific embodiments, the preparation method of the hole transport layer includes the following steps: depositing a layer of NiO on the substrate electrode by physical vapor deposition (PVD) technology. x (x is 1-1.5) as a hole transport layer and then undergoes annealing. The annealing temperature is controlled at 200-400 ° C to enhance the NiO x The crystallinity and stability of the NiO layer. x The thickness of the layer is controlled between 20-40 nm to further improve the hole transport efficiency.

[0055] In some embodiments, in step S2, the ReSe2 film is transferred to the surface of the hole transport layer and placed at 90-110°C for 15-25 minutes for heat treatment, so that the ReSe2 film and the hole transport layer are tightly bonded, and then the electron transport layer is deposited on the surface of the ReSe2 film. Specifically, the temperature of the heat treatment is 90°C, 92°C, 95°C, 98°C, 100°C, 102°C, 105°C, 108°C, 110°C, or a range of any two values; the temperature of the heat treatment is 15 minutes, 18 minutes, 20 minutes, 22 minutes, 25 minutes, or a range of any two values.

[0056] In some specific embodiments, the ReSe2 thin film is transferred to the surface of the hole transport layer according to the following steps:

[0057] (1) PDMS (polydimethylsiloxane) sheet transfer: The PDMS sheet is placed in contact with the ReSe2 film, and the ReSe2 film is adhered by the viscosity of PDMS. Then the PDMS sheet is quickly peeled off and the ReSe2 film is transferred to the surface of the PDMS sheet.

[0058] (2) Transfer to the hole transport layer: The PDMS sheet with the ReSe2 film is placed in contact with the hole transport layer and placed at 100°C for 20 minutes using a temperature control table to allow the ReSe2 film to be tightly bonded to the hole transport layer. Then, the PDMS sheet is slowly lifted, leaving the ReSe2 film on the surface of the hole transport layer.

[0059] In some embodiments, the electron transport layer is formed by chemical vapor deposition to improve the compactness of the electron transport layer and the ReSe2 thin film, thereby improving the efficiency of electron transport.

[0060] In some embodiments, the top electrode is formed by thermal evaporation deposition. Specifically, a layer of metal or non-metal is deposited on the electron transport layer using thermal evaporation technology to serve as the top electrode to improve electrical contact and collection performance.

[0061] In a third typical embodiment of the present application, a photoelectric device is further provided. The photoelectric device includes the solar cell provided in the first aspect or the solar cell obtained by the preparation method provided in the second aspect.

[0062] The optoelectronic device provided in this application uses a ReSe2 thin film with 3-53 layers of ReSe2 material as a light-absorbing layer for the solar cell, maintaining the direct band gap characteristics, so that the solar cell has high photoelectric conversion efficiency, high stability and low cost, thereby making the optoelectronic device have good application potential.

[0063] The beneficial effects of the present application will be further illustrated below with reference to examples and comparative examples.

[0064] Example 1

[0065] This embodiment provides a solar cell, which includes a substrate electrode, a hole transport layer, a two-dimensional material light absorption layer, an electron transport layer and a top electrode stacked in sequence, wherein the substrate electrode is ITO conductive glass with a thickness of 300nm; the hole transport layer is made of NiO with a thickness of 30nm; the two-dimensional material light absorption layer is a ReSe2 thin film, and the number of layers of ReSe2 material in the ReSe2 thin film is 5 and the thickness is 4nm; the material of the electron transport layer is fullerene C 60 , with a thickness of 40nm; the material of the top electrode is copper, with a thickness of 250nm.

[0066] The solar cell is prepared according to the following steps:

[0067] (1) Cleaning the ITO conductive glass substrate: Provide a 300nm thick ITO conductive glass substrate. Use acetone, isopropyl alcohol, and deionized water to clean the ITO conductive glass substrate in sequence to remove impurities and oil stains on the surface of the ITO conductive glass substrate. Then use a dust-free cloth or nitrogen gun to blow dry the substrate surface to ensure cleanliness.

[0068] (2) Preparation of hole transport layer: A 30 nm thick NiO layer was deposited on the ITO conductive glass by physical vapor deposition (PVD) and subsequently annealed. The annealing temperature was controlled at 300°C to enhance the crystallinity and stability of the NiO layer.

[0069] (3) Preparation of a two-dimensional material light-absorbing layer: Place a bulk ReSe2 single crystal on a tape, then cover it with another layer of tape. By gently pressing and slowly peeling off the upper tape, a ReSe2 film with a thickness of 4 nm and 5 ReSe2 material layers is peeled off.

[0070] The peeled ReSe2 film is placed in contact with a polydimethylsiloxane (PDMS) sheet, and the sheet is adhered using the stickiness of PDMS. The PDMS sheet is then quickly peeled off to transfer the ReSe2 film to the surface of the PDMS sheet.

[0071] The PDMS sheet with the ReSe2 film was placed in contact with the hole transport layer and placed at 100°C for 20 minutes using a temperature control table to allow the ReSe2 film to tightly bond to the hole transport layer (NiO layer). Then the PDMS sheet was slowly lifted, leaving the ReSe2 film on the surface of the hole transport layer (NiO layer).

[0072] (4) Preparation of electron transport layer: On the ReSe2 film, a layer of fullerene C60 with a thickness of 40 nm is deposited as the electron transport layer by chemical vapor deposition (CVD) technology.

[0073] (5) Preparation of top electrode: A layer of copper with a thickness of 250 nm is deposited on the electron transport layer by thermal evaporation technology as the top electrode, thereby obtaining the above-mentioned solar cell.

[0074] Example 2

[0075] The difference between this embodiment and embodiment 1 is that the thickness of the ReSe2 film serving as the two-dimensional material light absorption layer is 2.5 nm, and the number of layers of ReSe2 material in the ReSe2 film is 3.

[0076] Example 3

[0077] The difference between this embodiment and embodiment 1 is that the thickness of the ReSe2 film serving as the two-dimensional material light absorption layer is 10 nm, and the number of layers of ReSe2 material in the ReSe2 film is 12.

[0078] Example 4

[0079] The difference between this embodiment and embodiment 1 is that the thickness of the ReSe2 film serving as the two-dimensional material light absorption layer is 30 nm, and the number of layers of ReSe2 material in the ReSe2 film is 35.

[0080] Example 5

[0081] The difference between this embodiment and embodiment 1 is that the thickness of the ReSe2 film serving as the two-dimensional material light absorption layer is 45 nm, and the number of layers of ReSe2 material in the ReSe2 film is 53.

[0082] Example 6

[0083] The difference between this embodiment and embodiment 1 is that the thickness of the ITO conductive glass is 250nm, the thickness of the hole transport layer (TiO layer) is 35nm, and the thickness of the electron transport layer (fullerene C 60 The thickness of the copper layer is 300 nm and the thickness of the top electrode is 300 nm.

[0084] Example 7

[0085] The difference between this embodiment and embodiment 1 is that the thickness of the ITO conductive glass is 350 nm, the thickness of the hole transport layer (TiO layer) is 25 nm, and the thickness of the electron transport layer (fullerene C 60 The thickness of the copper layer is 50 nm, and the thickness of the top electrode (copper layer) is 200 nm.

[0086] Example 8

[0087] The difference between this embodiment and embodiment 1 is that the thickness of the ITO conductive glass is 400 nm, the thickness of the hole transport layer (TiO layer) is 10 nm, and the thickness of the electron transport layer (fullerene C60 The thickness of the top electrode (copper layer) is 100 nm.

[0088] Example 9

[0089] The difference between this embodiment and embodiment 1 is that the thickness of the ITO conductive glass is 100 nm, the thickness of the hole transport layer (TiO layer) is 40 nm, and the thickness of the electron transport layer (fullerene C 60 The thickness of the top electrode (copper layer) is 400 nm.

[0090] Example 10

[0091] The difference between this embodiment and embodiment 1 is that the electron transport layer (fullerene C 60 The thickness of the top electrode (copper layer) is 500 nm.

[0092] Example 11

[0093] The difference between this embodiment and embodiment 1 is that the electron transport layer (fullerene C 60 The thickness of the top electrode (copper layer) is 50 nm.

[0094] Comparative Example 1

[0095] The difference between this comparative example and Example 1 is that MoS2 thin film is used instead of ReSe2 thin film as the two-dimensional material light absorption layer.

[0096] Comparative Example 2

[0097] The difference between this comparative example and Example 1 is that WSe2 film is used instead of ReSe2 film as the two-dimensional material light absorption layer.

[0098] Comparative Example 3

[0099] The difference between this comparative example and Example 1 is that the thickness of the ReSe2 film serving as the two-dimensional material light absorption layer is 1.7 nm, and the number of layers of ReSe2 material in the ReSe2 film is 2.

[0100] Test example

[0101] The solar cells provided in the above examples and comparative examples were tested for performance, photoelectric conversion efficiency and stability. The results are shown in Table 1.

[0102] The test method for photoelectric conversion efficiency is as follows: under room temperature, use a 3A solar simulator at 100mW / cm 2 Under the light intensity, the photoelectric conversion efficiency of the solar cell is tested, and the effective area of the cell is 0.049cm 2 .

[0103] Table 1

[0104]

[0105]

[0106] Figure 1 The relationship between the open circuit voltage and short circuit current density of the solar cell provided in Example 1 is shown in FIG. Figure 1 It can be seen that when the open circuit voltage of the solar cell provided in Example 1 is 0.53 V, its short circuit current density is 19.30 mA / cm 2 .

[0107] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects: the solar cells provided in Examples 1-11 use a ReSe2 thin film with 3-53 layers of ReSe2 material as the light-absorbing layer, maintaining the direct band gap characteristics, so that the solar cells have a high open circuit voltage, short-circuit current density and high fill factor, and at the same time, a high photoelectric conversion efficiency. In contrast, in Comparative Examples 1-2, when MoS2 thin film or ReSe2 thin film is used to replace the ReSe2 thin film as the two-dimensional material light-absorbing layer, its open circuit voltage, short-circuit current density and fill factor are significantly reduced, and the photoelectric conversion efficiency is significantly reduced.

[0108] From this, it can be seen that this application uses a ReSe2 thin film with 3-53 layers of ReSe2 material as the light-absorbing layer, maintaining the direct band gap characteristics, so that the solar cell has high photoelectric conversion efficiency, high stability and low cost, and has broad application prospects in the field of optoelectronic devices.

[0109] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A solar cell, characterized in that: The solar cell includes a substrate electrode, a hole transport layer, a two-dimensional material light absorption layer, an electron transport layer and a top electrode stacked in sequence; wherein the two-dimensional material light absorption layer is a ReSe2 thin film, and the number of layers of ReSe2 material in the ReSe2 thin film is 3-53.

2. The solar cell according to claim 1, wherein The number of layers of ReSe2 material in the ReSe2 film is 3-35, preferably 4-12; And / or, the thickness of the ReSe2 film is 2-45 nm, preferably 3-30 nm, and more preferably 3-10 nm.

3. The solar cell according to claim 1, wherein The substrate electrode comprises a transparent conductive glass substrate and a transparent conductive oxide attached to the transparent conductive glass substrate, wherein the transparent conductive oxide comprises at least one of indium tin oxide, fluorine-doped tin oxide, and aluminum-doped zinc oxide, preferably indium tin oxide; And / or, the thickness of the substrate electrode is 100-400 nm, preferably 250-350 nm, more preferably 300 nm.

4. The solar cell according to claim 1, wherein The material of the hole transport layer includes NiO x , CuSCN or CuI, wherein x is 1-1.5, and the material of the hole transport layer is preferably NiO x ; And / or, the thickness of the hole transport layer is 10-40 nm, preferably 25-35 nm, more preferably 30 nm.

5. The solar cell according to claim 1, wherein The material of the electron transport layer includes TiO2, SnO2 or a fullerene derivative, preferably fullerene C 60 ; And / or, the thickness of the electron transport layer is 10-100 nm, preferably 20-80 nm, more preferably 30-60 nm, and most preferably 30-50 nm.

6. The solar cell according to any one of claims 1 to 5, characterized in that The material of the top electrode includes at least one of gold, silver, copper or amorphous carbon, preferably copper; And / or, the thickness of the top electrode is 50-500 nm, preferably 100-400 nm, more preferably 200-300 nm.

7. A method for preparing a solar cell according to any one of claims 1 to 6, characterized in that: The preparation method includes the following steps: providing a substrate electrode, depositing a hole transport layer on the surface of the substrate electrode, transferring a ReSe2 film to the surface of the hole transport layer, depositing an electron transport layer on the surface of the ReSe2 film, and depositing a top electrode on the surface of the electron transport layer to obtain the solar cell.

8. The method for preparing a solar cell according to claim 7, wherein: After the substrate electrode is cleaned and dried with an organic solvent and water in sequence, a hole transport layer is deposited on the surface of the substrate electrode; And / or, the hole transport layer is formed by physical vapor deposition.

9. The method for preparing a solar cell according to claim 7 or 8, characterized in that: The ReSe2 film is transferred to the surface of the hole transport layer, placed at 90-110° C. for 15-25 minutes, and then the electron transport layer is deposited on the surface of the ReSe2 film; And / or, the electron transport layer is formed by chemical vapor deposition; And / or, the top electrode is formed by thermal evaporation deposition.

10. A photoelectric device, characterized in that: The photovoltaic device comprises the solar cell according to any one of claims 1 to 6 or the solar cell obtained by the preparation method according to any one of claims 7 to 9.

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