Chemical vapor deposition equipment and diffusion assembly thereof

Abstract

The embodiment of the invention provides chemical vapor deposition equipment and a diffusion assembly thereof. The chemical vapor deposition equipment comprises a process chamber, the process chamber is provided with a top and a bottom which are opposite, the diffusion assembly comprises a first electrode and at least one stage of auxiliary diffusion plate, the first electrode is close to the top and provided with a plurality of first through holes, and the auxiliary diffusion plate is located on the side, close to the bottom, of the first electrode and provided with a plurality of second through holes. The orthographic projection of at least part of the second through holes on the top is located outside the orthographic projection of the first through holes on the top. According to the diffusion assembly, the to-be-reacted gas is diffused through the first through hole and the second through hole, so that the diffusion effect on the to-be-reacted gas is improved; and the second through holes and the first through holes are designed in a differentiated manner, so that the diffusion effect of the diffusion assembly on the to-be-reacted gas is further improved, the diffusion uniformity of the to-be-reacted gas is improved, and the to-be-reacted gas reaching the to-be-film-formed structure is more uniform.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of display screen production equipment, and in particular to a chemical vapor deposition device and a diffusion component thereof. Background Art

[0002] Organic Light Emitting Diode (OLED) and flat-panel display devices based on technologies such as Light Emitting Diode (LED) have been widely used in various consumer electronic products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, power saving, thin body, and wide range of applications, becoming the mainstream display device.

[0003] However, the process performance of current OLED display products needs to be improved, among which chemical vapor deposition equipment has a great impact on the process performance of OLED display products. Summary of the Invention

[0004] In view of this, embodiments of the present application provide a chemical vapor deposition apparatus and a diffusion component thereof to at least partially solve the above-mentioned problems.

[0005] According to a first aspect of an embodiment of the present application, a diffusion assembly of a chemical vapor deposition apparatus is provided. The chemical vapor deposition apparatus includes a process chamber having a top and a bottom facing each other, a structure to be formed into a film being placed near the bottom, and the diffusion assembly includes:

[0006] a first electrode, disposed close to the top, wherein the first electrode is provided with a plurality of first through holes;

[0007] at least one auxiliary diffusion plate, located on a side of the first electrode close to the bottom, the auxiliary diffusion plate being provided with a plurality of second through holes, wherein orthographic projections of at least some of the second through holes on the top are located outside the orthographic projections of the plurality of first through holes on the top;

[0008] The gas to be reacted diffuses toward the direction away from the top through the multiple first through holes and the multiple second through holes, and part of the gas to be reacted acts on the structure to be formed to form a corresponding film layer on the structure to be formed.

[0009] Optionally, the diameter of the first through hole is 0.1 mm to 5 mm, and the diameter of the second through hole is 0.1 mm to 5 mm.

[0010] Optionally, the aperture of the second through hole is smaller than the aperture of the first through hole.

[0011] Optionally, the distance between adjacent first through holes is 0.1 mm to 20 mm, and the distance between adjacent second through holes is 0.1 mm to 20 mm.

[0012] Optionally, the distance between adjacent second through holes is smaller than the distance between adjacent first through holes.

[0013] Optionally, the thickness of the first electrode is less than 100 mm, and the thickness of the auxiliary diffusion plate is less than 100 mm.

[0014] Optionally, the first electrode is made of a conductive material, and the auxiliary diffusion plate is made of an insulating material.

[0015] Optionally, orthographic projections of the plurality of second through holes at the top are located outside orthographic projections of the plurality of first through holes at the top.

[0016] Optionally, the orthographic projection of a portion of the multiple second through holes at the top is outside the orthographic projection of the multiple first through holes at the top; the orthographic projection of another portion of the multiple second through holes at the top is within the orthographic projection of the multiple first through holes at the top.

[0017] Optionally, at least a portion of the orthographic projection of the second through hole at the top partially overlaps with the orthographic projection of the first through hole at the top.

[0018] Optionally, the first electrode is fixed to the top by a first support rod, and the first support rod is fixed to the central area of the first electrode; the auxiliary diffusion plate is fixed to the top by multiple second support rods, and the second support rods are located in the peripheral area of the auxiliary diffusion plate.

[0019] Optionally, the auxiliary diffusion plate includes a first area and a second area, the orthographic projection of the first area on the top covers the orthographic projection of the first support rod on the top, the aperture of each second through hole is the same, and the distance between adjacent second through holes in the first area is smaller than the distance between adjacent second through holes in the second area.

[0020] Optionally, the auxiliary diffusion plate includes a first area and a second area, the orthographic projection of the first area on the top covers the orthographic projection of the first support rod on the top, the distance between the centers of each adjacent second through hole is the same, and the aperture of the second through hole in the first area is larger than the aperture of the second through hole in the second area.

[0021] Optionally, the auxiliary diffusion plate includes a first area and a second area, the orthographic projection of the first area on the top covers the orthographic projection of the first support rod on the top, the aperture of each second through hole is the same and the distance between the centers of each adjacent second through hole is the same, and the distance between the second through hole in the first area and the top is not equal to the distance between the second through hole in the second area and the top.

[0022] Optionally, the rigidity of the auxiliary diffusion plate is greater than the rigidity of the first electrode.

[0023] Optionally, the distance between the auxiliary diffusion plate closest to the first electrode and the first electrode is 0 mm to 500 mm.

[0024] Optionally, the at least one stage auxiliary diffusion plate includes a first stage auxiliary diffusion plate;

[0025] The first-stage auxiliary diffusion plate is a flat plate; or

[0026] The first-stage auxiliary diffusion plate is arc-shaped; or

[0027] The first-stage auxiliary diffusion plate is wave-shaped.

[0028] Optionally, the at least one-stage auxiliary diffusion plate includes a first-stage auxiliary diffusion plate and a second-stage auxiliary diffusion plate, the first-stage auxiliary diffusion plate is provided with a plurality of first-stage second through holes, the second-stage auxiliary diffusion plate is provided with a plurality of second-stage second through holes, the second-stage auxiliary diffusion plate is located below the first-stage auxiliary diffusion plate, and at least some of the orthographic projections of the first-stage second through holes on the top are located outside the orthographic projections of the plurality of second-stage second through holes on the top;

[0029] The first-stage auxiliary diffuser plate and the second-stage auxiliary diffuser plate are both flat plate-type; or

[0030] The first-stage auxiliary diffuser plate and the second-stage auxiliary diffuser plate are both arc-shaped; or

[0031] The first-stage auxiliary diffuser plate and the second-stage auxiliary diffuser plate are both wavy; or

[0032] The first-stage auxiliary diffusion plate is a flat plate, and the second-stage auxiliary diffusion plates are both flat plates with an arc or wave shape; or

[0033] The first-stage auxiliary diffusion plates are all flat and arc-shaped, and the second-stage auxiliary diffusion plates are flat or wavy; or

[0034] The first-stage auxiliary diffusion plate is wavy, and the second-stage auxiliary diffusion plate is flat or arc-shaped.

[0035] According to a second aspect of an embodiment of the present application, a chemical vapor deposition device is provided, which includes the above-mentioned support and diffusion assembly.

[0036] According to the solution provided in the embodiment of the present application, in the provided chemical vapor deposition equipment and its diffusion component, the first through hole on the first electrode performs preliminary diffusion of the reacted gas, and the second through hole on the auxiliary diffusion plate further diffuses the reacted gas, thereby improving the diffusion effect of the reacted gas; and the second through hole and the first through hole adopt a differentiated design, that is, the orthographic projection of at least part of the second through holes at the top is located outside the orthographic projection of multiple first through holes at the top, which is beneficial to further improve the diffusion effect of the diffusion component on the reacted gas, improve the uniformity of the diffusion of the reacted gas, and make the reacted gas reaching the structure to be formed more uniform, so that a more uniform film layer can be formed on the structure to be formed. When the diffusion component provided in this embodiment is applied to a chemical vapor deposition equipment for manufacturing a display product, it is beneficial to improve the display effect of the display product. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in the embodiments of the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0038] Figure 1 A diagram illustrating the sagging phenomenon of a first electrode and a common diffusion plate in a chemical vapor deposition device in the prior art;

[0039] Figure 2 This is a schematic structural diagram of a first electrode using a central support structure in a chemical vapor deposition device in the prior art;

[0040] Figure 3 A schematic structural diagram of a diffusion component in a chemical vapor deposition device provided in an embodiment of the present application;

[0041] Figure 4 for Figure 3 A schematic top view of the structure of the first electrode in the chemical vapor deposition apparatus shown;

[0042] Figure 5 for Figure 3 Schematic diagram of the principle of diffusion of the reacted gas by the first electrode and the auxiliary diffusion plate in the chemical vapor deposition equipment shown;

[0043] Figure 6 A schematic diagram of the design of a second through hole on an auxiliary diffusion plate in a diffusion assembly provided in an embodiment of the present application;

[0044] Figure 7 A schematic diagram of the design of another second through hole on an auxiliary diffusion plate in a diffusion assembly provided in an embodiment of the present application;

[0045] Figure 8 A schematic diagram of the design of a second through hole on another auxiliary diffuser plate in the diffuser assembly provided in an embodiment of the present application;

[0046] Figure 9 A schematic diagram of the shape design of the first auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0047] Figure 10 A schematic diagram of the shape design of the second auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0048] Figure 11 A schematic diagram of the shape design of the third auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0049] Figure 12 A schematic diagram of the shape design of the fourth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0050] Figure 13 A schematic diagram of the shape design of the fifth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0051] Figure 14 A schematic diagram of the shape design of the sixth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0052] Figure 15 A schematic diagram of the shape design of the seventh auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0053] Figure 16 A schematic diagram of the shape design of the eighth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0054] Figure 17 A schematic diagram of the shape design of the ninth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0055] Figure 18 A schematic diagram of the shape design of the tenth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0056] Figure 19 A schematic diagram of the shape design of the eleventh auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0057] Figure 20A schematic diagram of the shape design of the twelfth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0058] Figure 21 This is a schematic diagram of the shape design of the thirteenth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0059] Figure 22 This is a schematic diagram of the shape design of the fourteenth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0060] Figure 23 A schematic diagram of the shape design of the fifteenth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0061] Figure 24 A schematic diagram of the shape design of the sixteenth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0062] Figure 25 A schematic diagram of the shape design of the seventeenth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application;

[0063] Figure 26 This is a schematic diagram of the shape design of the eighteenth auxiliary diffusion plate in the diffusion assembly provided in an embodiment of the present application.

[0064] Reference numerals:

[0065] 1000-Chemical Vapor Deposition Equipment;

[0066] 10-shell; 100-process chamber; 101-air inlet; 102-air outlet;

[0067] 20-first electrode; 201-first through hole;

[0068] 30- second electrode;

[0069] 40- auxiliary diffuser plate; 401- second through hole; 402- second support rod; 40-1- first-stage auxiliary diffuser plate; 402-1- first-stage second through hole; 40-2- second-stage auxiliary diffuser plate; 402-2- second-stage second through hole;

[0070] M-film structure to be formed. DETAILED DESCRIPTION

[0071] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the embodiments of the present application, all other embodiments obtained by ordinary technicians in this field should fall within the scope of protection of the embodiments of the present application.

[0072] Chemical vapor deposition (CVD) is a method that primarily utilizes one or more vapor-phase compounds or elements containing the thin film element to chemically react on a substrate surface to form a thin film. CVD has been widely used to purify substances, develop new crystals, and deposit various single-crystal, polycrystalline, or glassy inorganic thin film materials. CVD equipment consists of a process chamber containing upper and lower electrodes. These electrodes, when powered by a power supply, provide an electric field or radio-frequency electromagnetic field to activate the gas, thereby depositing the thin film on the substrate.

[0073] CVD technology is mainly divided into atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), plasma enhanced CVD (PECVD) and atomic layer deposition (ALD) according to different reaction conditions. Taking plasma enhanced chemical vapor deposition (PECVD) as an example, Figure 1 As shown, the PECVD apparatus includes a housing 10. The space enclosed by the housing 10 is a process chamber 100. A first electrode 20 and a second electrode 30 are disposed in parallel with each other in the process chamber 100. The structure M to be film-formed is disposed between the first electrode 20 and the second electrode 30. Typically, the structure M to be film-formed is closer to the second electrode 30. Specifically, the first electrode 20 is typically referred to as the upper electrode, and the second electrode 30 is typically referred to as the lower electrode.

[0074] The first electrode 20 of the PECVD equipment is a solid metal plate with a first through-hole 201. This through-hole 201 allows the feedstock gas to be dispersed and introduced into the process chamber 100, thereby improving the uniformity of the deposited film. However, due to factors such as its own weight and the influence of the process, the first electrode 20 may sag after a period of use, thus affecting the film quality and uniformity.

[0075] like Figure 2 As shown, in order to improve the sagging problem of the first electrode 20, a center support dispersion plate (CSD) is often used in the prior art to support the first electrode 20 to reduce the sagging.

[0076] However, the central support and dispersion plate has a central support rod structure 203, which affects the diffusion uniformity of the gas at the first electrode 20 after it is introduced, thereby affecting the uniformity of film formation and ultimately affecting the performance of the device. Specifically, the presence of the first support rod 203 affects the diffusion of the gas around it. Even if the impact of the first support rod 203 on gas diffusion is minimized through design, it cannot be completely eliminated. In addition, in order to ensure the support performance of the first support rod 203 on the first electrode 20, the first support rod 203 must have a certain size. Therefore, the presence of the first support rod 203 will inevitably affect gas diffusion.

[0077] Specifically, the lower end of the first support rod 203 is fixed to the first electrode 20, and the upper end of the first support rod 203 is fixed to the top of the process chamber. Taking PECVD as an example, PECVD is often used in display screen production. The film uniformity caused by CSD can lead to mura problems on the display screen, namely CSD mura, which ultimately affects the image quality of the display product.

[0078] Based on the above technical problems, an embodiment of the present application provides a chemical vapor deposition device and a diffusion component thereof, which are used to improve the uniformity of gas diffusion in the CVD device, thereby improving the CSD mura problem and enhancing the display effect of the display product.

[0079] The embodiment of the present application provides a diffusion component of a chemical vapor deposition device, such as Figure 3 As shown, the chemical vapor deposition apparatus includes a process chamber 100 having a top and a bottom relative to each other, with the film-forming structure M positioned near the bottom. Specifically, the process chamber 100 is a space defined by a housing 10 , with an air inlet 101 disposed at the top of the housing 10 and an air outlet 102 disposed at the bottom of the housing 10 .

[0080] like Figure 3 As shown, the diffusion assembly provided in this embodiment includes a first electrode 20 and at least one auxiliary diffusion plate 40 .

[0081] The first electrode 20 is positioned near the top and is provided with a plurality of first through-holes 201. An auxiliary diffuser plate 40 is positioned on the side of the first electrode 20 near the bottom and is provided with a plurality of second through-holes 401. The orthographic projections of at least some of the second through-holes 401 at the top are located outside the orthographic projections of the plurality of first through-holes 201 at the top. The gas to be reacted diffuses away from the top through the plurality of first through-holes 201 and the plurality of second through-holes 401, and a portion of the gas to be reacted acts on the film structure to form a corresponding film layer thereon. Specifically, the first electrode 20 is reused as a diffuser plate.

[0082] The diffusion component provided in this embodiment has the first through hole 201 on the first electrode 20 for preliminary diffusion of the reacted gas, and the second through hole 401 on the auxiliary diffusion plate 40 for further diffusion of the reacted gas, thereby improving the diffusion effect of the reacted gas; and the second through hole 401 and the first through hole 201 adopt a differentiated design, that is, the orthographic projection of at least part of the second through hole 401 at the top is located outside the orthographic projection of multiple first through holes 201 at the top, which is beneficial to further improve the diffusion effect of the diffusion component on the reacted gas and improve the uniformity of the diffusion of the reacted gas, so that the reacted gas reaching the film-forming structure M is more uniform, thereby being able to form a more uniform film layer on the film-forming structure M. When the diffusion component provided in this embodiment is applied to chemical vapor deposition equipment for manufacturing display products, it is beneficial to improve the display effect of the display products.

[0083] like Figure 3 As shown, in the diffusion assembly provided in this embodiment, the diameter of the first through hole 201 is 0.1 mm to 5 mm, and the diameter of the second through hole 401 is 0.1 mm to 5 mm. Specifically, the diameter of the second through hole 401 is smaller than the diameter of the first through hole 201, thereby further improving the uniformity of the diffusion of the reactant gas.

[0084] like Figure 3 As shown, in the diffuser assembly provided in this embodiment, the distance between adjacent first through-holes 201 is 0.1 mm to 20 mm, and the distance between adjacent second through-holes 401 is 0.1 mm to 20 mm. Specifically, the distance between adjacent second through-holes 401 is smaller than the distance between adjacent first through-holes 201, thereby further improving the uniformity of diffusion of the reactant gas.

[0085] like Figure 3 As shown, in the diffusion assembly provided in this embodiment, the thickness of the first electrode 20 is less than 100 mm, and the thickness of the auxiliary diffuser plate 40 is less than 100 mm. The thickness of the first electrode 20 and the auxiliary diffuser plate 40 should fully consider the effects of strength and weight on deformation and sagging. That is, greater thickness necessarily increases weight, but weight may increase the risk of deformation and sagging of the first electrode 20 and the auxiliary diffuser plate 40. At the same time, greater thickness necessarily increases strength, and greater strength reduces the risk of deformation and sagging of the first electrode 20 and the auxiliary diffuser plate 40. Therefore, the thickness of the first electrode 20 and the auxiliary diffuser plate 40 should be determined by taking into account the effects of strength and weight.

[0086] like Figure 3 As shown, in the diffusion assembly provided by this embodiment, the material of the first electrode 20 is a conductive material, and the material of the auxiliary diffusion plate 40 is an insulating material.

[0087] like Figure 3As shown, in the diffusion assembly provided by this embodiment, the orthographic projections of the plurality of second through holes 401 at the top are outside the orthographic projections of the plurality of first through holes 201 at the top. Figure 3 The second through hole b, Figure 3 The orthographic projection of the second through hole 401b shown in FIG. 1 is located outside the orthographic projection of the plurality of first through holes 201 on the top. When the second through holes 401 on the auxiliary diffusion plate 40 are designed, the plurality of second through holes 401 in the auxiliary diffusion plate 40 are all designed as shown in FIG. Figure 3 The second through hole 401b is designed as shown.

[0088] like Figure 3 As shown, in the diffusion assembly provided by this embodiment, the orthographic projection of a portion of the plurality of second through holes 401 on the top is located outside the orthographic projection of the plurality of first through holes 201 on the top; the orthographic projection of another portion of the plurality of second through holes 401 on the top is located within the orthographic projection of the plurality of first through holes 201 on the top. For details, please refer to Figure 3 The second through holes 401a and 402b in the auxiliary diffuser plate 40 are designed such that the orthographic projection of the second through hole 401a at the top is located within the orthographic projection of the plurality of first through holes 201 at the top, and the orthographic projection of the second through hole 401b at the top is located outside the orthographic projection of the plurality of first through holes 201 at the top. When designing the second through holes 401 on the auxiliary diffuser plate 40, a portion of the plurality of second through holes 401 in the auxiliary diffuser plate 40 is designed such as Figure 3 The second through hole 401a shown in FIG. 1 is designed, and another part of the plurality of second through holes 401 in the auxiliary diffusion plate 40 is designed as shown in FIG. Figure 3 The second through hole 401b is designed as shown.

[0089] like Figure 3 As shown, in the diffusion assembly provided in this embodiment, at least part of the orthographic projection of the second through hole 401 at the top partially overlaps with the orthographic projection of the first through hole 201 at the top. Figure 3 The second through hole 401c in Figure 3 The orthographic projection of the second through hole 401c shown in FIG. 2 on the top partially coincides with the orthographic projection of the first through hole 201 on the top. When designing the second through holes 401 on the auxiliary diffusion plate 40, at least part of the plurality of second through holes 401 in the auxiliary diffusion plate 40 adopts the following method: Figure 3 The second through hole 401c is designed as shown.

[0090] Of course, when designing the second through holes 401 on the auxiliary diffusion plate 40, the plurality of second through holes 401 in the auxiliary diffusion plate 40 can be designed as follows: Figure 3 The second through holes 401a, 401b and 401c are designed as shown.

[0091] like Figure 3 As shown, in the diffusion assembly provided in this embodiment, the first electrode 20 is fixed to the top by a first support rod 203, which is fixed to the central area of the first electrode 20; the auxiliary diffusion plate 40 is fixed to the top by a plurality of second support rods 402, which are located in the peripheral area of the auxiliary diffusion plate 40. It should be noted that the first electrode 20 can also be provided with peripheral support rods 202 located in the peripheral area of the first electrode 20 to enhance the support force of the first electrode 20.

[0092] Specifically, if Figure 4 As shown, there are multiple first support rods 203. For example, in a specific application, there are four first support rods 203, and the first electrode 20 is rectangular. The diagonal length of the first electrode 20 is L, and the distance between each first support rod 203 and the nearest vertex is 15%L to 40%L, so that the first support rods 203 effectively support the first electrode 20 and prevent the first electrode 20 from sagging. It should be noted that the number of first support rods 203 can also be greater, and the design can be based on specific application conditions. The design of the first support rods 203 needs to comprehensively consider the support capacity of the first electrode 20 and the gas diffusion effect of the first support rods 203.

[0093] Specifically, if Figure 4 As shown, in some optional embodiments, the first electrode 20 is further provided with peripheral support rods 202. The peripheral support rods 202 are located at the edge areas of the first electrode 20, for example, at the four corners of the rectangular first electrode 20, which helps to disperse the force on the first electrode 20. However, in other optional embodiments, the first electrode 20 may not be provided with peripheral support rods 202, and the design is specifically based on the support requirements of the first electrode 20.

[0094] Specifically, such as Figure 3 、 Figure 6 and Figure 7 As shown, there are typically four second support rods 402, disposed at the four corners of the auxiliary diffuser plate 40 and connected to the top of the process chamber 100 in a suspended manner. To ensure the stability of the suspended connection of the auxiliary diffuser plate 40, the number of second support rods 402 can be appropriately increased. For example, in addition to the second support rods 402 disposed at the four corners of the auxiliary diffuser plate 40, second support rods 402 can also be disposed in the middle of each side of the auxiliary diffuser plate 40. It should be noted that the second support rods 402 can include damping units to reduce the impact of vibration on the auxiliary diffuser plate 40.

[0095] The principle of the auxiliary diffusion plate 40 improving the diffusion effect is as follows Figure 5As shown, when the gas passes through the first through hole 201 of the first electrode 20, the diffusion near the first support rod 203 is hindered due to the existence of the first support rod 203. After the gas is further diffused through the second through hole 401 on the auxiliary diffusion plate 40, the gas passing through the auxiliary diffusion plate 40 is made more uniform.

[0096] The support diffusion component provided in this embodiment supports the first electrode 20 through the first support rod 203 to prevent the first electrode 20 from sagging, and preliminarily diffuses the gas to be reacted passing through the first electrode 20 through the first through hole 201; the auxiliary diffusion plate 40 is used to further diffuse the gas to be reacted that has been preliminarily diffused through the first electrode 20, and the second through hole 401 on the auxiliary diffusion plate 40 and the first through hole 201 adopt a differentiated design, so that the gas to be reacted reaching the structure M to be film-formed is more uniform, so that a more uniform film layer can be formed on the structure M to be film-formed, so as to improve the mura problem caused by the first support rod 203 set on the first electrode 20 and enhance the display effect of the display product.

[0097] like Figure 3 As shown, in the support diffusion assembly provided in this embodiment, the rigidity of the auxiliary diffusion plate 40 is greater than the rigidity of the first electrode 20, so that even if the auxiliary diffusion plate 40 is connected to the top of the process chamber 100 using the second support rod 402, it can be ensured that the auxiliary diffusion plate 40 can resist gravity and deform.

[0098] like Figure 3 As shown, in the support diffusion assembly provided by this embodiment, the minimum distance between the auxiliary diffusion plate 40 closest to the first electrode 20 and the first electrode 20 is 0 mm to 500 mm. In the specific implementation process, the distance between the auxiliary diffusion plate 40 and the first electrode 20 can be adjusted according to specific diffusion requirements.

[0099] like Figure 3 As shown, in the support diffuser assembly provided in this embodiment, the first through-holes 201 and the second through-holes 401 are both circular, elliptical, or polygonal in shape, which can be selected based on specific diffusion requirements. Furthermore, in this embodiment, the aperture of the master through-hole 201 is larger than that of the second through-holes 401. That is, the second through-holes 401 on the auxiliary diffuser plate 40 have a smaller aperture. This helps to enhance the difference between the second through-holes 401 and the first through-holes 201, thereby improving the uniformity of gas diffusion.

[0100] The specific design of the second through holes 401 on the auxiliary diffusion plate 40 has a significant impact on the diffusion effect. The design of the second through holes 401 on the auxiliary diffusion plate 40 is described in detail below.

[0101] Specifically, if Figure 4As shown, since the position of the first support rod 203 on the first electrode 20 is preset, it is possible to predict areas with abnormal gas diffusion. In other words, the gas diffusion efficiency near the first support rod 203 is low due to the first support rod 203's obstruction to gas diffusion. In order to form a uniform film layer on the film-forming structure M, it is necessary to ensure a uniform atmosphere throughout the film-forming structure M. Therefore, the auxiliary diffusion plate 40 is required to improve the diffusion efficiency near the first support rod 203. To address the problem of low diffusion efficiency in known areas, the second through hole 401 is designed with partitions in the embodiment of the present application, as described below.

[0102] like Figure 6 As shown, in a specific embodiment, the auxiliary diffuser plate 40 includes a first region and a second region, the orthographic projection of the first region on the top overlaps the orthographic projection of the first support rod 203 on the top, the second through holes 401 on the auxiliary diffuser plate 40 are of the same size, the apertures of each second through hole 401 are the same, and the distance between adjacent second through holes in the first region Q1 is less than the distance between adjacent second through holes in the second region. The auxiliary diffuser plate 40 provided in this embodiment has a higher density of second through holes 401 in the first region, so that the diffusion efficiency of the first region of the auxiliary diffuser plate 40 is higher than the diffusion efficiency of the second region of the auxiliary diffuser plate 40, thereby improving the uniformity of the gas after diffusion through the auxiliary diffuser plate 40, and further improving the uniformity of the film layer formed on the film structure M to be formed.

[0103] It should be noted that Figure 6 The area within the dotted line frame is the first area Q1 , and the area outside the first area where the second through hole 401 is provided is the second area, which will not be described again later.

[0104] like Figure 7 As shown, in another specific embodiment, the auxiliary diffuser plate 40 includes a first region Q1 and a second region. The orthographic projection of the first region on the top overlaps the orthographic projection of the first support rod 203 on the top. The distance between the centers of adjacent second through holes is the same. The aperture of the second through holes 401 in the first region Q1 is larger than the aperture of the second through holes 401 in the second region. The auxiliary diffuser plate 40 provided in this embodiment has a larger size of the second through holes 401 in the first region Q1, so that the diffusion efficiency of the auxiliary diffuser plate 40 in the first region Q1 is higher than the diffusion efficiency of the second region of the auxiliary diffuser plate 40. This improves the uniformity of the gas after diffusion through the auxiliary diffuser plate 40, and further improves the uniformity of the film layer formed on the film structure M to be formed.

[0105] like Figure 8As shown, in another specific embodiment, the auxiliary diffusion plate 40 includes a first area Q1 and a second area Q2, the orthographic projection of the first area Q1 on the top covers the orthographic projection of the first support rod 203 on the top, the apertures of the second through holes 401 are the same and the distances between the centers of adjacent second through holes 401 are the same, and the distance between the second through holes 401 in the first area Q1 and the top is not equal to the distance between the second through holes in the second area Q2 and the top.

[0106] Specifically, the distance between the auxiliary diffusion plate 40 and the top of the process chamber 100 and the distance between the auxiliary diffusion plate 40 and the first electrode 20 both affect the gas diffusion effect. In a specific implementation, the distance between the second through-hole 401 in the first region Q1 and the top can be greater than the distance between the second through-hole 401 in the second region Q2 and the top, or the distance between the second through-hole 401 in the first region Q1 and the top can be less than the distance between the second through-hole 401 in the second region Q2 and the top. However, whether the distance between the second through-hole 401 in the first region Q1 and the top is greater or the distance between the second through-hole 401 in the second region Q2 and the top is greater requires a comprehensive design based on the distance between the auxiliary diffusion plate 40 and the top and the distance between the auxiliary diffusion plate 40 and the first electrode 20.

[0107] In the auxiliary diffusion plate 40 provided in this embodiment, the distance between the second through hole 401 and the top in the first area Q1 and the distance between the second through hole 401 and the top in the second area Q2 are designed so that the diffusion efficiency of the first area Q1 of the auxiliary diffusion plate 40 is higher than the diffusion efficiency of the second area Q2 of the auxiliary diffusion plate 40, thereby improving the uniformity of the gas to be reacted after diffusion through the auxiliary diffusion plate 40, and further improving the uniformity of the film layer formed on the film structure M to be formed.

[0108] In addition to enhancing the diffusion effect by designing the second through-holes 401 in a zoned manner, the number and shape of the auxiliary diffuser plates 40 also affect the diffusion effect. Specifically, in the supported diffuser assembly provided in this embodiment, the number and shape of the auxiliary diffuser plates 40 can be set based on specific application conditions. The number and shape of the auxiliary diffuser plates 40 are described in detail below.

[0109] Optionally, the auxiliary diffuser plate 40 may have one stage, i.e., at least one stage of auxiliary diffuser plates 40 includes a first-stage auxiliary diffuser plate 40-1, which is provided with a plurality of first-stage second through holes 401-1. The first-stage second through holes 401-1 are used to further diffuse the to-be-reacted gas that has been initially diffused through the first through holes 201. Based on the fact that the auxiliary diffuser plate 40 has one stage, the auxiliary diffuser plate 40 may have different shapes, as shown in the following embodiments.

[0110] like Figure 9 As shown, in the supported diffuser assembly provided in this embodiment, the auxiliary diffuser plate 40 is provided at one stage, i.e., at least one stage of auxiliary diffuser plates 40 includes a first-stage auxiliary diffuser plate 40-1, and the first-stage auxiliary diffuser plate 40-1 is flat. The flat-plate auxiliary diffuser plate 40 is particularly suitable for combination with the embodiment of the above-mentioned second through-hole 401 zoning design, which improves the diffusion effect of the first region Q1 by utilizing the density and size of the second through-holes 401, to further enhance the gas diffusion effect.

[0111] like Figure 10 and Figure 11 As shown, in the supported diffusion assembly provided in this embodiment, the number of stages of the auxiliary diffusion plates 40 is one, that is, at least one stage of the auxiliary diffusion plates 40 includes a first-stage auxiliary diffusion plate 40-1, and the first-stage auxiliary diffusion plate 40-1 is arc-shaped. It should be noted that the arc-shaped first-stage auxiliary diffusion plate 40-1 can be curved upward, that is, the first electrode 20 is located between the arc-shaped first-stage auxiliary diffusion plate 40-1 and the center of the circle where the arc-shaped first-stage auxiliary diffusion plate 40-1 is located (specifically, as shown in FIG. Figure 10 As shown); the arc-shaped first-stage auxiliary diffusion plate 40-1 may also be bent downward, that is, the arc-shaped first-stage auxiliary diffusion plate 40-1 is located between the center of the circle where the first electrode 20 and the arc-shaped first-stage auxiliary diffusion plate 40-1 are located (specifically as Figure 11 shown).

[0112] The arc-shaped auxiliary diffusion plate 40 is suitable for combining with the embodiment of the above-mentioned second through hole 401 partition design to improve the diffusion effect of the first area Q1 by the density and size of the second through hole 401, so as to better improve the gas diffusion effect. Figure 12As shown, in the support and diffusion assembly provided in this embodiment, the number of auxiliary diffusion plates 40 is one, that is, at least one auxiliary diffusion plate 40 includes a first-stage auxiliary diffusion plate 40-1, and the first-stage auxiliary diffusion plate 40-1 is wavy. The wavy auxiliary diffusion plate 40-1 is particularly suitable for combining with the embodiment of the above-mentioned second through-hole 401 zoning design to improve the diffusion effect of the first region Q1 by adjusting the distance between the second through-hole 401 and the top of the process chamber 100, so as to further improve the gas diffusion effect. That is, by making the wave crest opposite to the first support rod 203 or making the wave trough opposite to the first support rod 203, the distance between the second through-hole 401 and the top in the first region Q1 (i.e., at the first support rod 203) can be adjusted to be greater or less than the distance between the second through-hole 401 and the top in the second region. Of course, while achieving the zoning design of the distance between the second through-hole 401 and the top of the process chamber, the density and / or size of the second through-hole 401 can also be designed to achieve a better gas diffusion effect.

[0113] Optionally, the auxiliary diffuser plates 40 may have multiple stages. This embodiment is described using an example in which the auxiliary diffuser plates 40 have two stages, but this is merely an example, and this application does not limit the number of stages of the auxiliary diffuser plates 40. In the support and diffusion assembly provided in this embodiment, at least one stage of the auxiliary diffuser plates 40 includes a first-stage auxiliary diffuser plate 40-1 and a second-stage auxiliary diffuser plate 40-2. The first-stage auxiliary diffuser plate 40-1 is provided with a plurality of first-stage second through holes 401-2, and the second-stage auxiliary diffuser plate 40-2 is provided with a plurality of second-stage second through holes 401-2. The second-stage auxiliary diffuser plate 40-2 is located below the first-stage auxiliary diffuser plate 40-1. The first-stage second through holes 401-1 and the second-stage second through holes 401-2 are used to further diffuse the gas to be reacted that has been initially diffused through the first through holes.

[0114] like Figures 13 to 26 As shown, in the supporting diffusion component provided by this embodiment, the orthographic projection of the first-level second through hole 401-1 on the top does not overlap with the orthographic projection of the second-level second through hole 401-2 on the top, that is, the first-level second through hole 401-1 and the second-level second through hole 401-2 are staggered, which can better diffuse the reaction gas to obtain a better diffusion effect, thereby ensuring the uniformity of the film layer formed on the film structure M to be formed.

[0115] like Figures 13 to 26 As shown, in the support diffusion assembly provided in this embodiment, the distance between the first-stage auxiliary diffusion plate 40-1 and the second-stage auxiliary diffusion plate 40-2 is 0mm~500mm, and the distance between the first-stage auxiliary diffusion plate 40-1 and the second-stage auxiliary diffusion plate 40-2 can be adjusted according to specific diffusion requirements.

[0116] Specifically, in the supporting diffusion assembly provided in this embodiment, the shapes of the first-stage auxiliary diffusion plate 40-1 and the second-stage auxiliary diffusion plate 40-2 can be the same or different. The following embodiments respectively list examples of the first-stage auxiliary diffusion plate 40-1 and the second-stage auxiliary diffusion plate 40-2 with the same shape, and the first-stage auxiliary diffusion plate 40 and the second-stage auxiliary diffusion plate 40-2 with different shapes.

[0117] First, the case where the first-stage auxiliary diffuser plate 40 - 1 and the second-stage auxiliary diffuser plate 40 - 2 have the same shape will be described.

[0118] like Figure 13 As shown, in the supported diffuser assembly provided in this embodiment, both the first-stage auxiliary diffuser plate 40-1 and the second-stage auxiliary diffuser plate 40-2 are flat-plate shaped. However, it should be noted that the orthographic projection of the first-stage second through holes 401-1 on the first-stage auxiliary diffuser plate 40-1 on the top and the orthographic projection of the second-stage second through holes 401-2 on the second-stage auxiliary diffuser plate 40-2 on the top do not overlap. In other words, the differentiated design of the first-stage second through holes 401-1 and the second-stage second through holes 401-2 facilitates improved diffusion of the reacted gas.

[0119] like Figure 14 and Figure 15 As shown, in the supporting diffusion assembly provided by this embodiment, the first-stage auxiliary diffusion plate 40-1 and the second-stage auxiliary diffusion plate 40-2 are both arc-shaped and have the same bending direction. Figure 14 As shown, the first-stage auxiliary diffusion plate 40-1 and the second auxiliary diffusion plate 40-2 are both arc-shaped and bent upward, as shown in FIG. Figure 14 As shown, the first-stage auxiliary diffusion plate 40 - 1 and the second-stage auxiliary diffusion plate 40 - 2 are both arc-shaped and bent downward.

[0120] like Figure 16 As shown, in the support diffusion assembly provided by this embodiment, the first-stage auxiliary diffusion plate 40 - 1 and the second-stage auxiliary diffusion plate 40 - 2 are both wavy.

[0121] The following describes the first-stage auxiliary diffuser plate 4050 - 1 and the second-stage auxiliary diffuser plate 40 - 2 having different shapes.

[0122] like Figures 17 to 19 As shown, in the supporting diffusion assembly provided in this embodiment, the first-stage auxiliary diffusion plate 40-1 is a flat plate, and the second-stage auxiliary diffusion plate 40-2 is as shown. Figure 17 The arc shape shown is upwardly curved, or the second-stage auxiliary diffusion plate 40-2 is as shown Figure 18 The arc shape shown is downwardly curved, or the second-stage auxiliary diffusion plate 40-2 is as shown Figure 19 The wave pattern shown.

[0123] like Figures 20 to 21 As shown, in the supporting diffusion assembly provided in this embodiment, the first-stage auxiliary diffusion plate 40-1 is an arc shape that bends downward, and the second-stage auxiliary diffusion plate 40-2 is as shown. Figure 20 The flat plate type shown, or the second stage auxiliary diffusion plate 40-2 is as shown Figure 21 The wave pattern shown.

[0124] like Figures 22 to 23 As shown, in the supporting diffusion assembly provided in this embodiment, the first-stage auxiliary diffusion plates 40-1 are all arc-shaped and bend upward, while the second-stage auxiliary diffusion plates 40-2 are as shown. Figure 22 The flat plate type shown, or the second stage auxiliary diffusion plate 40-2 is as shown Figure 23 The wave pattern shown.

[0125] like Figures 24 to 26 As shown, in the supporting diffusion assembly provided in this embodiment, the first-stage auxiliary diffusion plates 40-1 are all wavy, and the second-stage auxiliary diffusion plates 40-2 are as follows. Figure 24 The flat plate type shown, or the second stage auxiliary diffusion plate 40-2 is as shown Figure 25 As shown in the upward curved arc, or the second-stage auxiliary diffusion plate 40-2 is as shown in the Figure 26 The downward curving arc shown.

[0126] It should be noted that when the auxiliary diffusion plate 40 has multiple levels, it can also be combined with the solution in the above embodiment of partitioning the second through holes 401 on the auxiliary diffusion plate 40 (density of the second through holes 401, size of the second through holes 401 and the distance between the auxiliary diffusion plate 40 and the top) to improve the gas diffusion effect.

[0127] Based on the same inventive concept, an embodiment of the present application provides a chemical vapor deposition device 1000, which includes any diffusion component in the above embodiments and has the beneficial effects of the diffusion components in the above embodiments, which will not be repeated here.

[0128] Specifically, the chemical vapor deposition equipment 1000 provided in this embodiment is a plasma enhanced chemical vapor deposition equipment, which can be used to produce display products. The first electrode 20 in the diffusion component of the plasma enhanced chemical vapor deposition equipment is connected to the top through the first support rod 203. Since an auxiliary diffusion plate 40 is added to the diffusion component, and the second through hole 401 on the auxiliary diffusion plate 40 adopts a design that is different from the first through hole 201 of the first electrode 20, the uneven diffusion problem of the first electrode 20 caused by the first support rod 203 can be improved, and the uniformity of gas diffusion is improved, that is, the gas at the structure M to be formed is more uniform, so that a more uniform film layer can be formed on the structure M to be formed, which can effectively improve the CSD mura problem and improve the display effect of the display product.

[0129] The above implementation methods are only used to illustrate the embodiments of the present application, and are not intended to limit the embodiments of the present application. Ordinary technicians in the relevant technical field can make various changes and modifications without departing from the spirit and scope of the embodiments of the present application. Therefore, all equivalent technical solutions also fall within the scope of the embodiments of the present application, and the scope of patent protection of the embodiments of the present application should be defined by the claims.

Claims

1. A diffusion component of a chemical vapor deposition device, characterized in that: The chemical vapor deposition equipment includes a process chamber having a top and a bottom relative to each other, the structure to be formed into a film is placed near the bottom, and the diffusion component includes: a first electrode, disposed close to the top, wherein the first electrode is provided with a plurality of first through holes; at least one auxiliary diffusion plate, located on a side of the first electrode close to the bottom, the auxiliary diffusion plate being provided with a plurality of second through holes, wherein orthographic projections of at least some of the second through holes on the top are located outside the orthographic projections of the plurality of first through holes on the top; The gas to be reacted diffuses toward the direction away from the top through the multiple first through holes and the multiple second through holes, and part of the gas to be reacted acts on the structure to be formed to form a corresponding film layer on the structure to be formed.

2. The diffusion assembly according to claim 1, characterized in that The diameter of the first through hole is 0.1 mm to 5 mm, and the diameter of the second through hole is 0.1 mm to 5 mm.

3. The diffusion assembly according to claim 2, characterized in that The aperture of the second through hole is smaller than the aperture of the first through hole.

4. The diffusion assembly according to claim 1, wherein: The distance between adjacent first through holes is 0.1 mm to 20 mm, and the distance between adjacent second through holes is 0.1 mm to 20 mm.

5. The diffusion assembly according to claim 4, characterized in that The distance between adjacent second through holes is smaller than the distance between adjacent first through holes.

6. The diffusion assembly according to any one of claims 1 to 5, characterized in that: The thickness of the first electrode is less than 100 mm, and the thickness of the auxiliary diffusion plate is less than 100 mm.

7. The diffusion assembly according to any one of claims 1 to 5, characterized in that: The material of the first electrode is a conductive material, and the material of the auxiliary diffusion plate is an insulating material.

8. The diffusion assembly according to any one of claims 1 to 5, characterized in that: Orthographic projections of the plurality of second through holes at the top are located outside orthographic projections of the plurality of first through holes at the top.

9. The diffusion assembly according to any one of claims 1 to 5, characterized in that: Orthographic projections of a portion of the plurality of second through holes on the top are located outside the orthographic projections of the plurality of first through holes on the top; An orthographic projection of another portion of the plurality of second through holes at the top is located within an orthographic projection of the plurality of first through holes at the top.

10. The diffusion assembly according to any one of claims 1 to 5, characterized in that: At least a portion of the orthographic projection of the second through hole at the top partially overlaps with the orthographic projection of the first through hole at the top.

11. The diffusion assembly according to any one of claims 1 to 5, characterized in that: The first electrode is fixed to the top via a first support rod, and the first support rod is fixed to the central area of the first electrode; The auxiliary diffusion plate is fixed to the top through a plurality of second support rods, and the second support rods are located in a peripheral area of the auxiliary diffusion plate.

12. The support diffuser assembly according to claim 11, characterized in that: The auxiliary diffusion plate includes a first area and a second area, the orthographic projection of the first area on the top covers the orthographic projection of the first support rod on the top, the apertures of each second through hole are the same, and the distance between adjacent second through holes in the first area is smaller than the distance between adjacent second through holes in the second area.

13. The support diffuser assembly according to claim 11, characterized in that: The auxiliary diffusion plate includes a first area and a second area, the orthographic projection of the first area on the top covers the orthographic projection of the first support rod on the top, the distance between the centers of each adjacent second through hole is the same, and the aperture of the second through hole in the first area is larger than the aperture of the second through hole in the second area.

14. The support diffuser assembly according to claim 11, characterized in that: The auxiliary diffusion plate includes a first area and a second area, the orthographic projection of the first area on the top covers the orthographic projection of the first support rod on the top, the aperture of each second through hole is the same and the distance between the centers of each adjacent second through hole is the same, and the distance between the second through hole in the first area and the top is not equal to the distance between the second through hole in the second area and the top.

15. The support diffuser assembly according to claim 1, characterized in that: The auxiliary diffusion plate has a rigidity greater than that of the first electrode.

16. The support diffuser assembly according to claim 1, characterized in that: The distance between the auxiliary diffusion plate closest to the first electrode and the first electrode is 0 mm to 500 mm.

17. The support diffuser assembly according to claim 1, characterized in that: The at least one stage auxiliary diffusion plate includes a first stage auxiliary diffusion plate; The first-stage auxiliary diffusion plate is a flat plate; or The first-stage auxiliary diffusion plate is arc-shaped; or The first-stage auxiliary diffusion plate is wave-shaped.

18. The support diffuser assembly according to claim 1, characterized in that: The at least one auxiliary diffusion plate comprises a first-stage auxiliary diffusion plate and a second-stage auxiliary diffusion plate, the first-stage auxiliary diffusion plate is provided with a plurality of first-stage second through holes, the second-stage auxiliary diffusion plate is provided with a plurality of second-stage second through holes, the second-stage auxiliary diffusion plate is located below the first-stage auxiliary diffusion plate, and at least some of the orthographic projections of the first-stage second through holes on the top are located outside the orthographic projections of the plurality of second-stage second through holes on the top; The first-stage auxiliary diffusion plate and the second-stage auxiliary diffusion plate are both flat plate-type; or The first-stage auxiliary diffusion plate and the second-stage auxiliary diffusion plate are both arc-shaped; or The first-stage auxiliary diffuser plate and the second-stage auxiliary diffuser plate are both wave-shaped; or The first-stage auxiliary diffusion plate is a flat plate, and the second-stage auxiliary diffusion plates are both flat plates with an arc or wave shape; or The first-stage auxiliary diffusion plates are all flat and arc-shaped, and the second-stage auxiliary diffusion plates are flat or wavy; or The first-stage auxiliary diffusion plate is wavy, and the second-stage auxiliary diffusion plate is flat or arc-shaped.

19. A chemical vapor deposition device, characterized in that: A diffusion assembly comprising the diffusion assembly according to any one of claims 1 to 18.

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