4D-STEM data quality real-time judgment method, device and equipment and storage medium

Abstract

According to the 4D-STEM data quality real-time judgment method, device and equipment and the storage medium, file updating in the specified storage position is detected in real time, the two-dimensional diffraction patterns in the 4D-STEM data of the scanning points stored in the newly-added file are summed, the summed diffraction pattern is generated and displayed on the interaction interface, the image signal-to-noise ratio is increased, and the image quality is improved. Moreover, the average band axis orientation information of the sample in the target acquisition area can be displayed through the addition diffraction pattern, and the average band axis position of the target scanning range and the quality of the acquired data are reflected, so that a user can observe and analyze the addition diffraction pattern in real time; whether the quality of the acquired 4D-STEM data meets the requirement or not is quickly judged in real time in the data acquisition process, and the data quality judgment feedback efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of scanning transmission electron microscopy (STEM) imaging technology, and in particular to a method, device, equipment, and storage medium for real-time judgment of 4D-STEM data quality. Background Art

[0002] Currently, the 4D-STEM data acquisition process generates tens to hundreds of thousands of diffraction patterns. Traditional methods for assessing 4D-STEM data quality rely on servers performing long-term, precise reconstruction after large-scale 4D-STEM data acquisition to identify and filter useful data within the dataset. However, this approach cannot rapidly assess data quality in real time during the data acquisition process, limiting its application in in-situ dynamic material microscopic characterization. Summary of the Invention

[0003] In view of this, in order to solve the above technical problems, the present application provides a method, device, equipment and storage medium for real-time judgment of 4D-STEM data quality.

[0004] Specifically, this application is implemented through the following technical solutions:

[0005] According to a first aspect of an embodiment of the present application, a method for real-time determination of 4D-STEM data quality is provided, the method comprising:

[0006] In response to a file addition event in a designated storage location, reading 4D-STEM data stored in the newly added file, the data being acquired by scanning N scanning points within a target acquisition area of the sample;

[0007] Superimposing the diffraction patterns of each scanning point in the 4D-STEM data of N scanning points to obtain a summed diffraction pattern corresponding to the newly added file; wherein the diffraction pattern of each scanning point is used to represent the diffraction intensity distribution in the reciprocal space after the electron beam interacts with the sample at the scanning point;

[0008] The summed diffraction pattern is displayed on an interactive interface, and the summed diffraction pattern is used to determine whether the quality of the 4D-STEM data stored in the newly added file meets the requirements.

[0009] Optionally, the diffraction pattern of each scanning point corresponds to a diffraction intensity distribution matrix, each element in the matrix represents a diffraction intensity value recorded in the reciprocal space; and superimposing the diffraction pattern of each scanning point in the 4D-STEM data of N scanning points comprises:

[0010] Obtain the diffraction intensity distribution matrix of each scanning point in sequence according to the coordinate order of N scanning points;

[0011] Add the diffraction intensity distribution matrices of N scanning points according to the positions of the matrix elements to obtain a sum distribution matrix;

[0012] Based on the sum distribution matrix, a sum diffraction pattern represented visually is obtained.

[0013] Optionally, after obtaining the summed diffraction pattern, the method further comprises:

[0014] Determining the center position of the tape axis of the summed diffraction pattern, and calculating the position offset of the tape axis center position relative to a preset reference center position;

[0015] When the position offset is greater than a set threshold, it is determined that the quality of the 4D-STEM data stored in the newly added file does not meet the requirements, and the newly added file is deleted from the designated storage location.

[0016] Optionally, the method further includes:

[0017] In response to a centroid integral map iCOM map acquisition instruction, determining, for the N scanning points, a centroid offset of the diffraction map of each scanning point;

[0018] The obtained N centroid offsets are integrated by the centroid integral map iCOM algorithm to obtain the iCOM map of the target acquisition area corresponding to the 4D-STEM data, and displayed on the interactive interface.

[0019] Optionally, before reading the 4D-STEM data from the newly added file, the method further includes:

[0020] Get the format information of the newly added file;

[0021] If the format information does not meet the set format standard, continue to monitor the file addition event; wherein the set format standard at least includes setting the file suffix;

[0022] When the format information meets the set format standard, the 4D-STEM data stored in the newly added file is read.

[0023] Optionally, obtaining the format information of the newly added file includes:

[0024] If the newly added file is an independent single file, obtain the full file name and file suffix of the newly added file;

[0025] In the case that the newly added file is a composite file including a plurality of subsidiary files, a main file is identified according to a predefined rule, and a file suffix of the main file in the newly added file is obtained.

[0026] According to a second aspect of an embodiment of the present application, a data processing device is provided, the device comprising:

[0027] a data reading module, configured to respond to a file addition event in a designated storage location and read 4D-STEM data stored in the newly added file, the data being acquired by scanning N scanning points within a target sample acquisition area;

[0028] a diffraction pattern superposition module, configured to superimpose the diffraction patterns of each scanning point in the 4D-STEM data of N scanning points to obtain a summed diffraction pattern corresponding to the newly added file; wherein the diffraction pattern of each scanning point is used to represent the diffraction intensity distribution in reciprocal space after the electron beam interacts with the sample at that scanning point;

[0029] The display interaction module is used to display the summed diffraction pattern on an interactive interface, and the summed diffraction pattern is used to judge whether the quality of the 4D-STEM data stored in the newly added file meets the requirements.

[0030] Optionally, the diffraction pattern of each scanning point corresponds to a diffraction intensity distribution matrix, and each element in the matrix represents a diffraction intensity value recorded in the reciprocal space; the diffraction pattern superposition module is specifically used to:

[0031] Obtain the diffraction intensity distribution matrix of each scanning point in sequence according to the coordinate order of N scanning points;

[0032] Add the diffraction intensity distribution matrices of N scanning points according to the positions of the matrix elements to obtain a sum distribution matrix;

[0033] Based on the sum distribution matrix, a sum diffraction pattern represented visually is obtained.

[0034] Optionally, the device further comprises:

[0035] Determining the center position of the tape axis of the summed diffraction pattern, and calculating the position offset of the tape axis center position relative to a preset reference center position;

[0036] When the position offset is greater than a set threshold, it is determined that the quality of the 4D-STEM data stored in the newly added file does not meet the requirements, and the newly added file is deleted from the designated storage location.

[0037] Optionally, the device further comprises:

[0038] In response to a centroid integral map iCOM map acquisition instruction, determining, for the N scanning points, a centroid offset of the diffraction map of each scanning point;

[0039] The obtained N centroid offsets are integrated by the centroid integral map iCOM algorithm to obtain the iCOM map of the target acquisition area corresponding to the 4D-STEM data, and displayed on the interactive interface.

[0040] Optionally, before reading the 4D-STEM data from the newly added file, the apparatus further includes:

[0041] Format acquisition module, used to obtain the format information of newly added files;

[0042] The judgment module is configured to continue monitoring the file addition event if the format information does not conform to a set format standard, wherein the set format standard at least includes a set file suffix; and read the 4D-STEM data stored in the newly added file if the format information conforms to the set format standard.

[0043] Optionally, the format acquisition module is specifically used to:

[0044] If the newly added file is an independent single file, obtain the full file name and file suffix of the newly added file;

[0045] In the case that the newly added file is a composite file including a plurality of subsidiary files, a main file is identified according to a predefined rule, and a file suffix of the main file in the newly added file is obtained.

[0046] According to a third aspect of an embodiment of the present application, an electronic device is provided, comprising: a memory and a processor; the memory is configured to store a computer program; and the processor is configured to execute the above-mentioned method for real-time 4D-STEM data quality determination by calling the computer program.

[0047] According to a fourth aspect of the embodiments of the present application, a computer-readable storage medium is provided, on which a computer program is stored. When the program is executed by a processor, the above-mentioned method for real-time judgment of 4D-STEM data quality is implemented.

[0048] The technical solutions provided by the embodiments of the present application may have the following beneficial effects:

[0049] In the technical solution provided by the present application, by real-time detection of file updates in a specified storage location, the two-dimensional diffraction patterns in the 4D-STEM data of the scanning points stored in the newly added files are summed to generate and display a summed diffraction pattern, thereby improving the image signal-to-noise ratio. The summed diffraction pattern is used to display the average zonal axis orientation information of the sample in the target acquisition area, reflecting the average zonal axis position of the target scanning range and the quality of the acquired data, so that users can quickly determine whether the quality of the 4D-STEM data acquired by this scan meets the requirements by observing and analyzing the summed diffraction pattern in real time. It should be understood that the above general description and the detailed description below are merely exemplary and explanatory and do not limit the present application. In addition, any embodiment of the present application does not necessarily achieve all of the above effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0051] Figure 1A 4D-STEM data acquisition and storage process flow diagram in the related art is exemplified;

[0052] Figure 1B This is a flow chart of a method for real-time judgment of 4D-STEM data quality shown in an exemplary embodiment of the present application;

[0053] Figure 1C is a diffraction pattern of a certain scanning point on the surface of an object shown in an exemplary embodiment of the present application;

[0054] Figure 1D is a summed diffraction pattern obtained by superimposing diffraction patterns of N scanning points within a specified collection area of a sample shown in an exemplary embodiment of the present application;

[0055] Figure 2 This is a flow chart of steps for obtaining a summed diffraction pattern, shown in an exemplary embodiment of the present application;

[0056] Figure 3A This is a flowchart of a step for analyzing data quality based on summed diffraction patterns, shown in an exemplary embodiment of the present application;

[0057] Figure 3B 1 is a reference center position and auxiliary line for a summed diffraction pattern shown in an exemplary embodiment of the present application;

[0058] Figure 4A This is a flowchart of an iCOM image acquisition step shown in an exemplary embodiment of the present application;

[0059] Figure 4Bis a summed diffraction pattern and a corresponding iCOM image shown in an exemplary embodiment of the present application;

[0060] Figure 5 is a structural diagram of a data processing device shown in an exemplary embodiment of the present application;

[0061] Figure 6 It is a hardware schematic diagram of an electronic device shown in an exemplary embodiment of the present application. DETAILED DESCRIPTION

[0062] Here, exemplary embodiments will be described in detail, with examples shown in the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Instead, they are merely examples of devices and methods consistent with certain aspects of this application as detailed in the appended claims. It should be understood that although the terms first, second, third, etc. may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other.

[0063] The scanning transmission electron microscopy (STEM) imaging mode under the transmission electron microscope (TEM) has become one of the important means for characterizing and modifying the microstructure of devices and materials, because it uses a sub-nanometer-scale convergent electron beam to scan the sample point by point, which can detect and modify the fine local atomic structure of the sample at the nanometer scale. The resulting 4D-STEM and 5D-STEM have the characteristics of minimal electron beam interference on the sample and high imaging resolution. The 4D-STEM image data collection mode under the STEM imaging mode requires collecting data from a two-dimensional diffraction disk / pattern at each scanning position on the two-dimensional sample plane, forming a four-dimensional 4D-STEM data set consisting of two-dimensional real space + two-dimensional diffraction space. If it is necessary to track and monitor changes on the time scale or continuously modify the material, it is necessary to collect 4D-STEM at each characteristic time point to form a 5D data set. Then, an iterative algorithm is used to accurately inverse the material function and electron beam function to obtain the atomically resolved material structure and its change process.

[0064] Regarding the acquisition of 4D-STEM data, such as Figure 1A The schematic diagram of the 4D-STEM data acquisition and storage process is shown as an example, including the data acquisition preparation stage and the acquisition and storage stage.

[0065] During the preparation stage, the overall position of the sample is preliminarily determined. Before each transmission scan is performed on a designated local area of the sample (i.e., the target collection area), the position and orientation of the sample are precisely adjusted so that the target collection area of the sample is within the scanning range of the electron beam. The scanning parameters suitable for the target collection area are set according to the research purpose and sample characteristics, such as the electron beam beam intensity, scanning step length, exposure time, defocus amount and other parameters.

[0066] During the acquisition and storage phase, the device positions and accurately focuses the electron beam on each scanning point within the target acquisition area on the sample in sequence according to the preset scanning step size and scanning area size. The diffraction signal generated by the interaction between the electron beam and the sample at any scanning point is captured by the detector. After signal conversion and amplification, the diffraction pattern data of the scanning point is generated. The diffraction pattern data of each scanning point in the target acquisition area are integrated and stored in the order of the scanning positions to obtain a data file storing the 4D-STEM data collected in the target acquisition area. After completing the transmission scan of the target acquisition area, the data file is generated with a unique file name according to the preset file naming rules and stored in a pre-specified storage location. The file name can include information such as the acquisition time, sample number, and scanning area to facilitate subsequent data management and query.

[0067] After completing the transmission scan of the target acquisition area of the sample, before acquiring the newly determined target acquisition area for the next scan, the scanning parameters of the device are adjusted according to the preset parameter adjustment scheme to obtain device parameters suitable for the newly determined target acquisition area for the next scan. After the parameter adjustment is completed, the transmission scan of the newly determined target acquisition area for the next scan is continued and the acquired 4D-STEM data is stored. The above process is repeated until the transmission scan of the entire sample is completed.

[0068] Currently, the 4D-STEM and 5D-STEM data acquisition process generates tens to hundreds of thousands of diffraction patterns. Traditional methods require servers to perform precise reconstruction over extended periods of time, such as days or weeks, after completing large-scale 4D-STEM or 5D-STEM data acquisition to identify and filter the useful data within the collected datasets. This processing method creates storage space pressure and, at the same time, cannot rapidly assess data quality in real time during the data acquisition process, limiting the application of 4D-STEM or 5D-STEM data acquisition for in-situ dynamic material microscopic characterization.

[0069] To address the above-mentioned technical problems, the present application provides a method for real-time 4D-STEM data quality assessment. This method processes a data file stored in a designated storage location in real time. The data file contains 4D-STEM data collected from a target acquisition area of a sample using a scanning transmission mode of a transmission electron microscope (TEM). This method analyzes whether the data quality of the 4D-STEM data collected from this target acquisition area meets the required quality. Because 4D-STEM data and 5D-STEM data are identical multidimensional diffraction imaging data based on the interaction between the electron beam and the sample, and rely on the interaction between the electron beam and sample atoms in a transmission electron microscope (TEM), the physical nature and basic principles of data acquisition are consistent. Therefore, this method for real-time 4D-STEM data quality assessment is also applicable to 5D-STEM data quality assessment scenarios.

[0070] According to the present application, processing of a data file for 4D-STEM data begins when the data file is stored in a designated storage location. The data file processing process can be paralleled with the 4D-STEM data acquisition process, thereby enabling real-time and rapid data quality assessment of the most recently acquired 4D-STEM data during the data acquisition process. The quality assessment results of the most recently acquired 4D-STEM data can be promptly fed back to the operator, enabling the operator to promptly identify and resolve problems during the acquisition process, such as by promptly adjusting acquisition parameters and / or re-acquiring. This avoids repeated acquisitions caused by discovering data quality issues only after acquisition is complete, saving time and resources.

[0071] See also Figure 1B A flowchart of a method for real-time determination of 4D-STEM data quality is shown as an example. The method for real-time determination of 4D-STEM data quality provided in this application may include at least the following steps:

[0072] S101, in response to a file newly added event in a designated storage location, reading 4D-STEM data stored in the newly added file, which is acquired by scanning N scanning points within a target sample acquisition area;

[0073] The designated storage location represents a pre-defined file storage path or directory for storing 4D-STEM data files collected using a transmission electron microscope in scanning transmission mode. This storage location can be a folder on a local computer's hard drive or a specific directory on a network storage device.

[0074] A new file event is used to indicate that new data has been stored in a designated storage location. For example, when data file F1 corresponding to target collection area M1 of a sample is stored in the designated storage location, a new file event is triggered. This new file event can be monitored and captured by the data processing program, so that when a new data file is stored in the designated storage location, the data processing flow of this application is triggered to process the new data file in real time.

[0075] The newly added file is the data file stored in the designated storage location when a new file event is triggered. For example, in the example above, when data file F1 is stored in the designated storage location, a new file event is triggered, and data file F1 is the newly added file. This newly added file stores data from the target acquisition area of the sample acquired using 4D-STEM technology, including diffraction information from all scan points within the target acquisition area of the sample. It has a specific file format, such as HDF5 or TIFF, for efficiently storing and organizing large amounts of four-dimensional data. In this embodiment, the designated storage location can be continuously monitored during the 4D-STEM data acquisition process, and the newly added file that triggered the new file event can be processed in real time in response to the new file event in the designated storage location.

[0076] The target collection area of the sample is divided into N discrete scanning points. The electron beam is positioned at each scanning point in turn and collects the diffraction pattern at that point. The size of N depends on the scanning step size and the size of the target collection area. The smaller the scanning step size, the larger N is, and the higher the resolution of the collected data.

[0077] A 4D-STEM dataset is a four-dimensional dataset that contains two spatial dimensions (scanning position) and two momentum dimensions (diffraction information). Specifically, the diffraction pattern of each scanning point corresponds to a two-dimensional diffraction intensity distribution matrix, which represents the information of the scanning point in reciprocal space (i.e., diffraction space). Each element in the matrix corresponds to the diffraction intensity value at a specific pixel position on the detector. The diffraction patterns of all scanning points are arranged in the order of the scanning position, forming the information of the spatial dimension. This four-dimensional data structure can comprehensively describe the microstructure and characteristics of the sample within the target acquisition area.

[0078] A 4D-STEM dataset can be represented as a four-dimensional tensor:

[0079]

[0080] The real space coordinate is R=(R x ,R y ), the scanning position forms a two-dimensional grid in real space, and the grid size is N x ×N y , N xand N y Respectively represent the number of scanning points in the x and y directions; the reciprocal space coordinate K=(k x ,k y ), the detector pixels form a two-dimensional grid in the reciprocal space, and the grid size is and Represents k x and k y The number of detector pixels in the direction; the intensity function I(R,K) represents the diffraction intensity value of the pixel corresponding to the reciprocal space coordinate K on the detector at the scanning position R. For each scanning position R = (R x ,R y ), I(R,K) when K=(k x ,k y ) constitutes a The two-dimensional diffraction intensity distribution matrix of the scanning point R is fully described in the reciprocal space. x ×N y The two-dimensional diffraction intensity distribution matrix corresponding to each scanning position is arranged in the order of the scanning positions to form a four-dimensional tensor. This four-dimensional tensor completely records the full diffraction information of each scanning position in the sample target acquisition area, forming a 4D mapping relationship between real space and diffraction space.

[0081] This step is used to read the 4D-STEM data of each of the N scanning points from the newly added file, including the position and diffraction information of each scanning point. The diffraction information may include at least a diffraction pattern, so as to facilitate the subsequent superposition processing of the single diffraction pattern corresponding to each scanning point. Figure 1C The diffraction pattern of a certain scanning point on the surface of an object is shown as an example. The brightness of each pixel in the pattern represents the diffraction intensity in the diffraction direction corresponding to the similar point. The higher the brightness, the more electrons are scattered in the diffraction direction, and the greater the diffraction intensity in that direction. By analyzing the brightness of each pixel in the diffraction pattern, information about the sample's microstructure can be obtained, such as the crystal lattice constant, crystal orientation, defects, etc.

[0082] In this step, a file system monitoring tool can be used to monitor the specified storage location, setting the monitored event type to a new file event and registering an event handler function. When a new file event occurs, the handler function is automatically called to read the 4D-STEM data corresponding to N scan points. Alternatively, other feasible implementation methods in related technologies can be used, such as a production and consumption model based on a message queue, which is not limited in this application.

[0083] S102, superimposing the diffraction patterns of each scanning point in the 4D-STEM data of N scanning points to obtain a summed diffraction pattern corresponding to the newly added file; wherein the diffraction pattern of each scanning point is used to represent the diffraction intensity distribution in the reciprocal space after the electron beam interacts with the sample at the scanning point;

[0084] In this embodiment, N scanning points belong to the target collection area of the sample and are collected sequentially using the same equipment within the same time period. Therefore, the pixel matrix size of the diffraction pattern of each scanning point is the same, for example, 128*128. That is, the diffraction patterns corresponding to the N scanning points are consistent in terms of pixel matrix dimensions, and the pixel positions in the diffraction patterns of different scanning points are the same. Pixels at the same pixel position represent the same diffraction direction. For example, in the diffraction patterns of all scanning points, the pixel located in the i-th row and the j-th column corresponds to the scattering of the electron beam in a specific diffraction direction.

[0085] Based on this, when the diffraction patterns of N scanning points are superimposed to obtain a summed diffraction pattern, the diffraction intensities represented by the pixels at the same position in the diffraction patterns corresponding to the N scanning points can be cumulatively summed to serve as the diffraction intensities represented by the pixels at the same position in the summed diffraction pattern. The summation is then performed for all pixels at the N scanning points to obtain the corresponding summed diffraction pattern. That is, the diffraction intensity value represented by each pixel in the summed diffraction pattern is obtained by accumulating the diffraction intensity values represented by the pixels at the same position in the diffraction patterns corresponding to the N scanning points. For example, see Figure 1D The summed diffraction pattern obtained by superimposing the diffraction patterns of N scanning points in a specified collection area of a certain sample as exemplified can be used to reflect the comprehensive diffraction characteristics of the entire scanning area in the reciprocal space.

[0086] This step is used to superimpose the diffraction patterns of each scanning point in the 4D-STEM data of N scanning points. Based on , the superposition operation in this step is essentially to sum the diffraction intensity distribution represented by each of the N scanning points, which can be expressed as:

[0087]

[0088] The double summation symbol indicates that all real space scanning positions (i.e. scanning points) are traversed. For any reciprocal space position K = (k x ,k y ) is used to accumulate and sum the diffraction intensities of all scanning points at the reciprocal space position to obtain the total diffraction intensity of the reciprocal space position at all real space scanning points.

[0089] Based on the principles of statistical averaging and signal superposition, random noise is usually irregular and of low intensity in the diffraction patterns at different scanning points, while effective diffraction signals, such as crystal diffraction spots, are consistent and of high intensity in the diffraction patterns at different scanning points. Therefore, through this superposition operation of the diffraction patterns of N scanning points, the low-intensity random noise will cancel each other out, while the high-intensity effective signal will continue to accumulate and enhance, achieving the effect of effectively removing random noise and enhancing the effective diffraction signal, thereby significantly improving the image signal-to-noise ratio and having good robustness under low electron dose imaging conditions. Therefore, the summed diffraction pattern can reflect the validity and accuracy of the collected original data, representing the quality of the reconstruction of the sample microstructure image obtained by precise reconstruction based on the 4D-STEM data set collected this time.

[0090] The diffraction pattern based on each scanning point contains the diffraction intensity distribution in the reciprocal space after the interaction between the electron beam and the sample at the scanning point. The diffraction intensity distribution is closely related to the crystal orientation of the sample. By superimposing the diffraction patterns of multiple scanning points, it is equivalent to comprehensively averaging the crystal orientation information of multiple different positions. Compared with the traditional method of only displaying a single scanning point diffraction pattern, the summed diffraction pattern obtained by this application can reflect the average band axis orientation information in the target collection area of the sample, and represent the comprehensive diffraction intensity distribution of all scanning points and the global average structural characteristics, which is helpful to analyze the microstructure and characteristics of the sample in the entire collection area.

[0091] S103 , displaying the summed diffraction pattern on an interactive interface, wherein the summed diffraction pattern is used to determine whether the quality of the 4D-STEM data stored in the newly added file meets the requirements.

[0092] Based on the data features presented by the summed diffraction pattern, it is possible to determine whether the quality of the 4D-STEM data stored in the newly added file meets the requirements. For example, at least one of the data features such as the clarity of the diffraction spots or rings presented in the summed diffraction pattern, the uniformity of the diffraction intensity distribution, the noise level in the background area, the overall symmetry of the diffraction pattern, and the center position of the band axis of the summed diffraction pattern can be used as a basis for judging whether the quality of the 4D-STEM data meets the requirements. The data quality can be judged by analyzing whether these data features meet the requirements. For example, if the crystal diffraction spots or rings in the summed diffraction pattern are clear and sharp with distinct edges, and the background area is clean and has a low noise level, it can reflect that the diffraction signal generated by the interaction between the electron beam and the sample is strong and the signal-to-noise ratio is high, indicating that the crystal structure in the sample is well-integrity, there is no additional contamination on the surface, and the data acquisition process is stable, so the data quality is high.

[0093] An interactive interface is a channel for information exchange between humans and computer systems. Users input information and issue commands to the computer system through the interactive interface, and the computer system provides feedback and displays information to the user through the interactive interface. In this embodiment, the interactive interface is a graphical visualization software interface that integrates various function buttons, menus, drawing areas, and other elements to facilitate researchers' interaction with the summed diffraction pattern displayed on the interactive interface.

[0094] In this step, the summed diffraction pattern generated by processing the 4D-STEM data from N scan points is displayed on an interactive interface. This allows researchers to more quickly identify key data features presented by the summed diffraction pattern through direct visual observation, thereby rapidly assessing the quality of the newly stored 4D-STEM data. The interactive interface also allows researchers to perform various operations and interactions on the summed diffraction pattern, such as zooming in, out, rotating, measuring, and calibrating the center of the diffraction pattern's axis. This facilitates a more in-depth analysis of the diffraction pattern's details, allowing researchers to more accurately determine whether the data quality meets their requirements, thereby improving work efficiency.

[0095] If the quality of the 4D-STEM data stored in a newly added file is determined to be substandard based on the summed diffraction pattern, timely feedback can be provided to the operator, allowing them to readjust the acquisition parameters and re-acquire 4D-STEM data for the target acquisition area of the sample corresponding to the newly added file. This allows the operator to promptly identify and resolve issues during the acquisition process, avoiding repeated acquisitions due to data quality issues discovered only after the acquisition is complete, saving time and resources. Furthermore, 4D-STEM data stored in newly added files that do not meet the requirements can be removed from the designated storage location to avoid the storage of a large number of invalid data files, reducing storage space usage and storage management pressure.

[0096] During the 4D-STEM data acquisition process, before acquiring data from the newly determined target acquisition area for the next scan of the sample, the scanning parameters of the device need to be adjusted according to a preset parameter adjustment scheme to obtain device parameters suitable for the newly determined target acquisition area for the next scan. The real-time 4D-STEM data quality judgment method provided in this application can quickly and automatically generate and display a preview image of the summed diffraction pattern in a short period of time. Therefore, during the waiting period for adjusting the parameters to perform a transmission scan on the next target acquisition area, the user can observe and analyze the summed diffraction pattern in real time to judge the data quality, thereby facilitating the adjustment of experimental parameters before scanning the next target acquisition area to improve the quality of subsequently acquired data.

[0097] In the disclosed embodiment, the 4D-STEM data acquisition process and the processing of stored 4D-STEM datasets can be performed simultaneously. By real-time detection of file updates in a designated storage location, the two-dimensional diffraction patterns in the 4D-STEM data of the scan points stored in the newly added file are summed to generate a summed diffraction pattern and display it on the interactive interface. This not only improves the image signal-to-noise ratio, but also allows the summed diffraction pattern to display the average zone axis orientation information of the sample in the target acquisition area, reflecting the average zone axis position of the target scanning range and the quality of the acquired data. This allows users to quickly and in-real time determine whether the quality of the scanned 4D-STEM data meets requirements by observing and analyzing the summed diffraction pattern during the data acquisition process. This eliminates the need to wait for the entire sample to be scanned and then undergo a lengthy and precise reconstruction to filter valid data from the dataset, greatly improving the efficiency of data quality judgment feedback.

[0098] In addition, since data processing and acquisition are carried out in parallel, data acquisition of the next target acquisition area of the sample can continue while processing the current new file. This continuity makes the data acquisition process smoother, avoids acquisition interruptions caused by data processing, and enables the scanning transmission of the entire sample to be completed more quickly.

[0099] In some embodiments, the diffraction pattern of each scanning point represents the diffraction information of the scanning point in the reciprocal space, and the diffraction pattern corresponds to a diffraction intensity distribution matrix. Each element in the matrix represents the diffraction intensity value recorded in the reciprocal space. Moreover, the pixel matrices of the diffraction patterns of the N scanning points have the same size and the pixels at the same position represent the same diffraction direction. Therefore, the summed diffraction pattern corresponding to the newly added file as described in step S102 of the aforementioned embodiment can be achieved by superimposing the diffraction intensity distribution matrices. Specifically, see Figure 2 The flowchart of the steps for obtaining the summed diffraction pattern is shown as an example. This method can be implemented by the following steps:

[0100] S201, obtaining the diffraction intensity distribution matrix of each scanning point in sequence according to the coordinate order of N scanning points;

[0101] The diffraction intensity distribution matrix for each scan point is a two-dimensional array whose rows and columns represent the number of sampling points in the two-dimensional space. When the diffraction intensity distribution matrix is visualized as a diffraction pattern, each element in the matrix corresponds to a pixel value in the diffraction pattern. The value of the matrix element represents the diffraction intensity at that two-dimensional spatial location, and the pixel value of the diffraction pattern is intuitively represented by some color mapping or grayscale mapping. For a 128×128 diffraction intensity distribution matrix, the matrix element I(i,j) (where i represents the row index and j represents the column index) corresponds to the pixel value in the i-th row and j-th column of the diffraction pattern.

[0102] S202, adding the diffraction intensity distribution matrices of N scanning points according to the positions of the matrix elements to obtain a sum distribution matrix;

[0103] That is, for each of the N scanning points' corresponding diffraction intensity distribution matrices, the N element values at the same element position are summed, and this sum is used as the element value for the same element position in the summed distribution matrix. This sum is then traversed through all element positions in the diffraction intensity distribution matrix to generate a summed element matrix. The size of the summed distribution matrix is the same as the diffraction intensity distribution matrix for a single scanning point, and each element in the summed distribution matrix is the sum of the element values at the corresponding position in the N scanning points.

[0104] S203: Obtain a visually represented sum diffraction pattern based on the sum distribution matrix.

[0105] The summed distribution matrix combines information from multiple scan points, enhancing the effective signal (such as crystal diffraction spots) and suppressing random noise. This provides a more stable and accurate representation of the sample's average diffraction characteristics within the target acquisition area. To more intuitively display the sample's diffraction characteristics and facilitate observation and analysis, the summed distribution matrix can be visualized.

[0106] During visualization, the mapping relationship between the element values in the sum distribution matrix and the pixels in the visualized diffraction pattern is similar to the mapping relationship between the diffraction pattern of a single scan point and its corresponding diffraction intensity distribution matrix. For example, grayscale mapping or color mapping can be used to map the values in the matrix to different grayscale levels or colors within a certain range. Based on the determined mapping relationship, the sum distribution matrix is converted into an image format using image processing software or a drawing library in a programming language. During this conversion process, each row and column of the matrix corresponds to a pixel in the horizontal and vertical directions of the sum diffraction pattern, respectively. The value of each element in the matrix determines the color or brightness of the corresponding pixel.

[0107] In the disclosed embodiment, the average diffraction intensity distribution of the sample in the target collection area is displayed in an intuitive graphical form through the summed diffraction pattern, so that researchers can quickly judge whether the quality of the collected 4D-STEM data in the target collection area meets the requirements by observing the diffraction spots, rings and other features in the diffraction pattern, and evaluate whether the setting of experimental parameters is reasonable based on the quality of the summed diffraction pattern.

[0108] In some embodiments, the summed diffraction pattern is used as a key representation of the 4D-STEM data collected in the target collection area of the sample. It contains rich microstructural information, can display the average band axis orientation information of the sample in the target collection area, and represents the quality of the reconstruction. Therefore, the summed diffraction pattern can be analyzed to determine whether the quality of the 4D-STEM data collected in the target collection area of the sample meets the requirements.

[0109] In order to evaluate the data quality more scientifically and quantitatively, the quality of the obtained sum diffraction pattern can be evaluated by analyzing the center position of the axis of the sum diffraction pattern. The change of the axis center position can reflect the possible deviation and distortion problems in the data acquisition process. Therefore, after obtaining the sum diffraction pattern, refer to Figure 3A As shown, the following analysis steps may also be included:

[0110] S301, determining the center position of the belt axis of the summed diffraction pattern, and calculating the position offset of the belt axis center position relative to a preset reference center position;

[0111] The zone axis center of the summed diffraction pattern represents the center point corresponding to the crystallographic zone axis direction in the summed diffraction pattern, and represents the projected position of the crystal zone axis parallel to the electron beam direction in the diffraction space. The zone axis center position can be obtained by manually calibrating the zone axis center position directly on the displayed summed diffraction pattern on the interactive interface. For example, the user can trigger the zone axis center calibration operation through the zone axis center setting function provided by the interactive interface. Using the selected calibration tool, click or drag on the diffraction pattern to select the zone axis center. The interactive interface can display the calibration results, such as the coordinates of the zone axis center, in real time.

[0112] The reference center position represents a theoretical or experimental reference point relative to the actual calibration tape axis center position, and can be determined by experimental calibration, such as the center position of the electron beam on the detector without a sample, or by calibration values of a standard sample. For example, Figure 3B The reference center position and auxiliary lines for the summed diffraction pattern are exemplarily shown, and the symbol "+" in the center of the small figure represents the reference center position.

[0113] The position offset represents the distance between the center position of the band axis of the summed diffraction pattern and the preset reference center position on a two-dimensional plane. In this step, the position offset is used to measure the degree of deviation of the center position of the band axis of the summed diffraction pattern from the ideal reference position, indicating the offset of the projection axis of the sample crystal from the main band axis of the crystal.

[0114] Assume that the coordinates of the preset reference center position in the two-dimensional coordinate system are (x ref ,y ref ), the coordinate of the center position of the axis of the sum diffraction pattern is (x c ,yc ), the position offset d can be calculated using the Euclidean distance formula:

[0115] S302 : When the position offset is greater than a set threshold, determining that the quality of the 4D-STEM data stored in the newly added file does not meet the requirements, and deleting the newly added file from the designated storage location.

[0116] In 4D-STEM experiments, ideally, the center of the axis of the summed diffraction pattern is located near the preset reference center position. If the position offset is large, it means that there may be some unstable factors during the data acquisition process, such as electron beam drift, slight movement of the sample, local distortion inside the sample, etc., which leads to the overall offset of the diffraction pattern spots, which manifests as a systematic offset of the axis center. A large position offset may mean that there are large errors or uncertainties in the data, which will have an adverse effect on the precise reconstruction of subsequent data. For example, when analyzing the microstructure of a crystal, the offset of the axis center may lead to deviations in the measurement of parameters such as crystal orientation and strain.

[0117] Based on this, after obtaining the positional offset of the center of the tape axis relative to the reference center position, this embodiment determines whether the collected data quality meets the requirements by comparing this positional offset with a set threshold. This set threshold represents the maximum acceptable degree of deviation of the center of the tape axis of the summed diffraction pattern from the ideal reference position, and can be set to the radius of the summed diffraction pattern or a multiple of this radius, where the multiple is greater than 0 and less than 1.

[0118] A position offset greater than a set threshold indicates that the center position of the zone axis of the summed diffraction pattern deviates from the reference center to an extent beyond an acceptable range, indicating the presence of instability in the data acquisition process, which affects the quality of the diffraction pattern and, in turn, may make it impossible to accurately extract the microstructural information of the sample. Therefore, when the position offset is greater than the set threshold, the quality of the 4D-STEM data stored in the newly added file is determined to be unsatisfactory and the newly added file is automatically deleted from the designated storage location. This deleting low-quality data reduces storage space pressure and improves data management efficiency.

[0119] At the same time, for newly added files whose data quality does not meet the requirements, this information can also be fed back to the data acquisition process, so that N scanning points in the target acquisition area of the sample corresponding to the newly added file can be re-scanned and re-acquired at the 4D-STEM data set corresponding to the target acquisition area.

[0120] In the disclosed embodiments, 4D-STEM data quality is assessed by analyzing the center positions of the axis of the summed diffraction pattern and evaluating the degree of deviation of the axis center position from a reference center position. This provides a scientific and quantitative approach to data quality assessment. The position offset, as a specific numerical value, can intuitively reflect the degree of deviation from the ideal state during data acquisition, making data quality assessment more accurate and objective. Furthermore, when the position offset exceeds a set threshold, newly added files are automatically deleted, enabling automatic screening and cleaning of low-quality data. This prevents low-quality data from interfering with subsequent data processing and analysis, improving data processing efficiency and storage resource utilization.

[0121] iCOM (Integrated Center of Mass) calculation is an important method in 4D-STEM data analysis. It is used to visualize the spatial distribution of physical fields such as electric fields, strain, and thickness gradients within the sample. The core idea is to calculate the center of mass offset of the diffraction disk at each scanning point of the electron beam and integrate these offsets to ultimately generate a two-dimensional image reflecting the local physical properties of the sample.

[0122] In some embodiments, the physical information contained in 4D-STEM data under different material systems and experimental conditions is complex and diverse, and iCOM calculations can infer physical information such as structural changes or strain distribution within the material by calculating the changes in the center of mass position, providing an additional analysis dimension for data quality assessment. Therefore, in order to more accurately determine whether the collected 4D-STEM data meets the requirements, the quality of the collected 4D-STEM data can also be evaluated through iCOM calculation results. Based on this, see Figure 4A An exemplary flowchart of an iCOM image acquisition step is shown. The calculation can be performed in parallel with the acquisition process of the summed diffraction pattern. The real-time 4D-STEM data quality judgment method can also include the following iCOM calculation steps:

[0123] S401, in response to an iCOM image acquisition instruction, determining, for each of the N scanning points, a centroid offset of the diffraction pattern of each scanning point;

[0124] S402 , integrating the obtained N centroid offsets through a centroid integral map (iCOM) algorithm to obtain an iCOM map of the target acquisition area corresponding to the 4D-STEM data, and displaying the map on the interactive interface.

[0125] The iCOM image acquisition instruction can be manually triggered by researchers through the interactive interface, such as selecting to execute the iCOM image acquisition function in the interactive interface, or it can be automatically issued by a preset automated script or program when specific conditions are met, such as automatically triggering iCOM image generation after completing the generation of the summed diffraction pattern.

[0126] The centroid offset of the diffraction pattern at each scanning point represents the deflection of the electron beam due to the electric field, strain or thickness change inside the sample. Under thin sample and weak scattering conditions, the centroid offset of the diffraction disk is proportional to the projection of the potential gradient in the direction of the electron beam (i.e., the projected potential gradient).

[0127] The calculation of the iCOM map can be achieved by the following steps: for N scanning points within the target acquisition area, the center of mass (COM) of the diffraction pattern of each scanning point is calculated to obtain the center of mass offset, and the center of mass offset is spatially integrated. The two have the following relationship: That is, the gradient of the iCOM intensity is equal to the COM intensity. The iCOM intensity is approximately proportional to the electrostatic potential and / or thickness of the sample atoms, so the iCOM can directly reflect the elemental mass distribution and / or thickness distribution within the sample.

[0128] Regarding the calculation logic of the iCOM image obtained by integrating the center of mass offset through the center of mass integral image iCOM algorithm recorded in this embodiment, reference can be made to the iDPC image calculation logic recorded in the article "Phasecontrast STEM for thin samples: Integrated differential phase contrast" published in the journal ScienceDirect in the related art, or the article "Phase contrast scanning transmission electronmicroscopy imaging oflight and heavy atoms at the limit of contrast and resolution" published on the Nature.com platform. The iCOM image is an ideal multi-pixel version of the iDPC image, and the calculation principles and logic of the two are the same.

[0129] The iCOM image of the target acquisition area corresponding to the obtained 4D-STEM data can be used to evaluate the data quality of the acquired 4D-STEM data, see Figure 4BAn example of a summed diffraction pattern and its corresponding iCOM image is shown. The iCOM image can be used to preview the real-space structure of a sample and reflect the quality of 4D-STEM data in a localized area. The iCOM image and summed diffraction pattern can be used together to assess the quality of the same 4D-STEM data. Comparing the iCOM image with the summed diffraction pattern further verifies data consistency and enhances the reliability of the evaluation results.

[0130] Based on iCOM images, the real-space structural integrity of the sample can be analyzed through the iCOM image. For example, if there is obvious damage in the area or the focal length does not meet the requirements, it means that there may be problems with the quality of the collected 4D-STEM data. Data quality can also be assessed based on the clarity and contrast of the iCOM image. A clear iCOM image indicates that there is no excessive noise or distortion introduced during the data acquisition and processing process. An iCOM image with high contrast can more easily identify the characteristic information of the material's microstructure, thereby helping to determine whether the data meets the requirements. In addition, data quality can also be evaluated based on the identifiability of the characteristic information in the iCOM image. The iCOM image should be able to clearly display the characteristic information of the material's microstructure, such as strain concentration areas, orientation changes, etc. If these characteristic information is difficult to identify or unclear, it means that the quality of the collected 4D-STEM data may not meet the requirements.

[0131] In the embodiment of the present disclosure, by introducing the iCOM image to preview the real-space structure of the sample, the 4D-STEM data quality of the local area of the sample can be reflected. As an additional means of data quality assessment, the reliability of the judgment result is increased by comparing and analyzing the iCOM image with the summed diffraction pattern.

[0132] Given the critical value of 4D-STEM data in research in fields such as materials science and condensed matter physics, and to improve the accuracy and efficiency of 4D-STEM data analysis and avoid processing errors and resource waste caused by file format issues, before reading 4D-STEM data from a new file, a preliminary file quality quick screening can be performed on the new file to accurately and quickly obtain 4D-STEM data that meets the requirements. That is, before reading 4D-STEM data from a new file, the aforementioned real-time 4D-STEM data quality determination method also includes the following screening steps a1-a3 based on file format information:

[0133] a1, obtain the format information of the newly added file;

[0134] File format information is used to indicate information such as the file type, content characteristics, file organization, and storage method. In an embodiment, this format information is used to perform preliminary and rapid data quality screening on the newly added file, achieving efficient pre-filtering without parsing the file content and preventing invalid data from entering the subsequent processing flow. This format information may include at least one or more of the following: file name, file suffix, and file size.

[0135] Taking file format information including file name and file suffix as an example, 4D-STEM data can be organized into a single file or a combined file for storage. Therefore, in the process of obtaining file format information, if the newly added file is an independent single file, the full file name and file suffix of the newly added file can be obtained; if the newly added file is a combined file including multiple subsidiary files, the main file can be identified according to predefined rules, and the file suffix of the main file in the newly added file can be obtained.

[0136] A single independent file refers to the detector directly saving the 4D dataset (2D scan position × 2D diffraction pattern) for each scan as a single composite file. This means that all scan points and diffraction patterns within the target acquisition area of the sample are stored in multiple datasets within the same file. A combined file that includes multiple subsidiary files indicates that the 4D-STEM dataset is split into multiple associated files for storage, such as a master file + data block. The master file records the mapping between scan point positions and sub-files, while the sub-files store the actual diffraction data of the scan points.

[0137] a2. Reading the 4D-STEM data stored in the newly added file when the format information meets the set format standard; wherein the set format standard at least includes setting the file suffix;

[0138] Setting format standards is used to ensure that files are correctly identified and processed. For example, only specific file types (such as .hdf5 and 4D-STEM data files with specific suffixes) can be processed. In this embodiment, the set format standards may include at least a set file suffix list, which is used to store legal suffixes. In this embodiment, legal suffixes include at least .hdf5, .xml, etc. After extracting the file suffix of the newly added file, the extracted file suffix can be matched with the file suffixes in the set format standards to quickly determine whether the file meets the processing requirements.

[0139] a3, if the format information does not meet the set format standard, continue to monitor the new file event;

[0140] If the format information of a newly added file does not meet the set format standards, the system will not immediately attempt to read the data stored in the newly added file. Instead, it will continue to monitor the file and wait for the next file addition event, thus avoiding errors or exceptions caused by processing files that do not meet the format standards. In addition, for newly added files that do not meet the set format standards, a format exception alarm message can be triggered to prompt the user to pay attention and handle the newly added file in a timely manner.

[0141] In the disclosed embodiments, 4D-STEM data is complex and critical, and file screening based on file format information can ensure that the read file data format is standardized, thereby guaranteeing data quality. For files that do not meet the format standards, there is no need for subsequent complex reading and processing operations, thus avoiding unnecessary consumption of computing resources and waste of time. This allows the system to focus more on processing files that meet the requirements, speeding up data processing, improving data processing efficiency, and effectively enhancing the accuracy and reliability of data processing.

[0142] Corresponding to the embodiment of the above-mentioned 4D-STEM data quality real-time judgment method, see Figure 5 As shown, the present application also provides an embodiment of a data processing device, the device comprising:

[0143] A data reading module 501 is configured to respond to a file addition event in a designated storage location and read 4D-STEM data stored in the newly added file, which is acquired by scanning N scanning points within a target sample acquisition area.

[0144] a diffraction pattern superposition module 502 for superimposing the diffraction patterns of each scanning point in the 4D-STEM data of N scanning points to obtain a summed diffraction pattern corresponding to the newly added file; wherein the diffraction pattern of each scanning point is used to represent the diffraction intensity distribution in reciprocal space after the electron beam interacts with the sample at the scanning point;

[0145] The display interaction module 503 is used to display the summed diffraction pattern on an interactive interface. The summed diffraction pattern is used to determine whether the quality of the 4D-STEM data stored in the newly added file meets the requirements.

[0146] In some embodiments, the diffraction pattern of each scanning point corresponds to a diffraction intensity distribution matrix, each element in the matrix represents a diffraction intensity value recorded in the reciprocal space; the diffraction pattern superposition module is specifically used to:

[0147] Obtain the diffraction intensity distribution matrix of each scanning point in sequence according to the coordinate order of N scanning points;

[0148] Add the diffraction intensity distribution matrices of N scanning points according to the positions of the matrix elements to obtain a sum distribution matrix;

[0149] Based on the sum distribution matrix, a sum diffraction pattern represented visually is obtained.

[0150] In some embodiments, the apparatus further comprises:

[0151] Determining the center position of the tape axis of the summed diffraction pattern, and calculating the position offset of the tape axis center position relative to a preset reference center position;

[0152] When the position offset is greater than a set threshold, it is determined that the quality of the 4D-STEM data stored in the newly added file does not meet the requirements, and the newly added file is deleted from the designated storage location.

[0153] In some embodiments, the apparatus further comprises:

[0154] In response to a centroid integral map iCOM map acquisition instruction, determining, for the N scanning points, a centroid offset of the diffraction map of each scanning point;

[0155] The obtained N centroid offsets are integrated by the centroid integral map iCOM algorithm to obtain the iCOM map of the target acquisition area corresponding to the 4D-STEM data, and displayed on the interactive interface.

[0156] In some embodiments, before reading the 4D-STEM data from the newly added file, the apparatus further includes:

[0157] Format acquisition module, used to obtain the format information of newly added files;

[0158] The judgment module is configured to continue monitoring the file addition event if the format information does not conform to a set format standard, wherein the set format standard at least includes a set file suffix; and read the 4D-STEM data stored in the newly added file if the format information conforms to the set format standard.

[0159] In some embodiments, the format acquisition module is specifically configured to:

[0160] If the newly added file is an independent single file, obtain the full file name and file suffix of the newly added file;

[0161] In the case that the newly added file is a composite file including a plurality of subsidiary files, a main file is identified according to a predefined rule, and a file suffix of the main file in the newly added file is obtained.

[0162] The implementation process of the functions and effects of each unit in the above-mentioned device is specifically described in the implementation process of the corresponding steps in the above-mentioned method, and will not be repeated here.

[0163] The device embodiments described above are merely illustrative, wherein the units described as separate components may or may not be physically separate, and the components displayed as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the present application. A person of ordinary skill in the art can understand and implement the present invention without inventive effort.

[0164] The embodiment of the present application also provides an electronic device, the structural diagram of the electronic device is as follows Figure 6 As shown, the electronic device 600 includes at least one processor 601, a memory 602 and a bus 603, and the at least one processor 601 is electrically connected to the memory 602; the memory 602 is configured to store at least one computer-executable instruction, and the processor 601 is configured to execute the at least one computer-executable instruction, thereby performing the steps of any one of the methods for real-time determination of 4D-STEM data quality provided in any one of the embodiments or any one of the optional implementations in this application.

[0165] Furthermore, the processor 601 may be a Field-Programmable Gate Array (FPGA) or other devices with logic processing capabilities, such as a Microcontroller Unit (MCU) or a Central Processing Unit (CPU).

[0166] An embodiment of the present application further provides another readable storage medium storing a computer program, which, when executed by a processor, is used to implement the steps of any method for real-time determination of 4D-STEM data quality provided in any embodiment or any optional implementation manner of the present application.

[0167] The readable storage media provided in the embodiments of the present application include, but are not limited to, any type of disk (including floppy disks, hard disks, optical disks, CD-ROMs, and magneto-optical disks), ROM (Read-Only Memory), RAM (Random Access Memory), EPROM (Erasable Programmable Read-Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory), flash memory, magnetic cards, or optical cards. In other words, the readable storage medium includes any medium that can store or transmit information in a readable form by a device (e.g., a computer).

[0168] Thus, specific embodiments of the subject matter have been described. Other embodiments are within the scope of the following claims. In some cases, the actions recited in the claims can be performed in a different order and still achieve the desired results. Furthermore, the processes depicted in the accompanying drawings do not necessarily require the particular order shown or sequential sequence to achieve the desired results. In some implementations, multitasking and parallel processing may be advantageous.

[0169] Although this specification includes many specific implementation details, these should not be interpreted as limiting the scope of any invention or the scope of protection claimed, but are mainly used to describe the features of specific embodiments of specific inventions. Certain features described in multiple embodiments within this specification may also be implemented in combination in a single embodiment. On the other hand, the various features described in a single embodiment may also be implemented separately in multiple embodiments or in any suitable sub-combination. In addition, although features may work in certain combinations as described above and even initially claimed as such, one or more features from the claimed combination may be removed from the combination in some cases, and the claimed combination may point to a sub-combination or a variation of the sub-combination.

[0170] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A method for real-time judgment of 4D-STEM data quality, characterized in that: The method comprises: In response to a file addition event in a designated storage location, reading 4D-STEM data stored in the newly added file, the data being acquired by scanning N scanning points within a target acquisition area of the sample; Superimposing the diffraction patterns of each scanning point in the 4D-STEM data of N scanning points to obtain a summed diffraction pattern corresponding to the newly added file; wherein the diffraction pattern of each scanning point is used to represent the diffraction intensity distribution in the reciprocal space after the electron beam interacts with the sample at the scanning point; The summed diffraction pattern is displayed on an interactive interface, and the summed diffraction pattern is used to determine whether the quality of the 4D-STEM data stored in the newly added file meets the requirements.

2. The method according to claim 1, characterized in that The diffraction pattern of each scanning point corresponds to a diffraction intensity distribution matrix, each element of which represents a diffraction intensity value recorded in the reciprocal space; superimposing the diffraction pattern of each scanning point in the 4D-STEM data of N scanning points comprises: Obtain the diffraction intensity distribution matrix of each scanning point in sequence according to the coordinate order of N scanning points; Add the diffraction intensity distribution matrices of N scanning points according to the positions of the matrix elements to obtain a sum distribution matrix; Based on the sum distribution matrix, a sum diffraction pattern represented visually is obtained.

3. The method according to claim 1, characterized in that After obtaining the summed diffraction pattern, the method further comprises: Determining the center position of the tape axis of the summed diffraction pattern, and calculating the position offset of the tape axis center position relative to a preset reference center position; When the position offset is greater than a set threshold, it is determined that the quality of the 4D-STEM data stored in the newly added file does not meet the requirements, and the newly added file is deleted from the designated storage location.

4. The method according to claim 1, wherein The method further comprises: In response to a centroid integral map iCOM map acquisition instruction, determining, for the N scanning points, a centroid offset of the diffraction map of each scanning point; The obtained N centroid offsets are integrated by the centroid integral map iCOM algorithm to obtain the iCOM map of the target acquisition area corresponding to the 4D-STEM data, and displayed on the interactive interface.

5. The method according to claim 1, wherein Before reading the 4D-STEM data from the newly added file, the method further includes: Get the format information of the newly added file; If the format information does not meet the set format standard, continue to monitor the file addition event; wherein the set format standard at least includes setting the file suffix; When the format information meets the set format standard, the 4D-STEM data stored in the newly added file is read.

6. The method according to claim 5, characterized in that The method of obtaining the format information of the newly added file includes: If the newly added file is an independent single file, obtain the full file name and file suffix of the newly added file; In the case that the newly added file is a composite file including a plurality of subsidiary files, a main file is identified according to a predefined rule, and a file suffix of the main file in the newly added file is obtained.

7. A data processing device, characterized in that: The device comprises: a data reading module, configured to respond to a file addition event in a designated storage location and read 4D-STEM data stored in the newly added file, the data being acquired by scanning N scanning points within a target sample acquisition area; a diffraction pattern superposition module, configured to superimpose the diffraction patterns of each scanning point in the 4D-STEM data of N scanning points to obtain a summed diffraction pattern corresponding to the newly added file; wherein the diffraction pattern of each scanning point is used to represent the diffraction intensity distribution in reciprocal space after the electron beam interacts with the sample at that scanning point; The display interaction module is used to display the summed diffraction pattern on an interactive interface, and the summed diffraction pattern is used to judge whether the quality of the 4D-STEM data stored in the newly added file meets the requirements.

8. The device according to claim 7, characterized in that The diffraction pattern of each scanning point corresponds to a diffraction intensity distribution matrix, and each element in the matrix represents the diffraction intensity value recorded in the reciprocal space; the diffraction pattern superposition module is specifically used to: Obtain the diffraction intensity distribution matrix of each scanning point in sequence according to the coordinate order of N scanning points; Add the diffraction intensity distribution matrices of N scanning points according to the positions of the matrix elements to obtain a sum distribution matrix; Based on the sum distribution matrix, a sum diffraction pattern represented visually is obtained.

9. An electronic device, characterized in that: include: Memory, processor; The memory is used to store computer programs; The processor is configured to call the computer program to implement the method according to any one of claims 1 to 6.

10. A readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the method according to any one of claims 1 to 6 is implemented.

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