Force-light dual-mode ionizing lead sulfide quantum dot sensor and preparation method thereof

Abstract

The invention belongs to the technical field of sensors, and discloses a force-light dual-mode ionization lead sulfide quantum dot sensor and a preparation method thereof.The force-light dual-mode ionization lead sulfide quantum dot sensor comprises a substrate electrode layer, a PbS QDs thin film layer and an ionic gel thin film layer, and under the light condition, light penetrates through the transparent ionic gel thin film layer and reaches the PbS QDs thin film layer. The high photoelectric conversion efficiency of the PbS QDs can efficiently convert the absorbed light energy into electric energy to complete optical signal detection, the current change of the sensor is measured, and the pressure signal change can be read. Under a pressure condition, a piezoelectric capacitance effect of an electronic double-electrode layer is generated in the ionic gel film layer, and when an ionic material is in contact with an electrode, the electronic double-electrode layer is formed on a contact interface. Under the action of pressure, the contact area between the electrode and the ionic material is increased, so that the interface capacitance value is changed. And the capacitance change of the sensor is measured, and the change of a pressure signal can be read, so that force-light dual-mode detection is realized.

Description

Technical Field

[0001] The present invention relates to the field of sensor technology, and in particular to a force-light dual-mode ionized lead sulfide quantum dot sensor and a preparation method thereof. Background Art

[0002] Photodetection is widely used in imaging, communications, and biosensing. Photodetectors on the market are primarily based on silicon and other III–V semiconductor materials, but these materials face challenges such as high cost and difficulty in achieving flexibility. PbS quantum dots (PbS) offer advantages such as a wide bandgap tunable range (0.6–1.6 eV), a high molar absorptivity (10⁶ M⁻¹ cm⁻¹), a simple preparation process, and excellent stability. Therefore, they are considered an excellent candidate for a new generation of flexible photodetectors. For example, graphene-PbS quantum dot hybrid photodetectors combine PbS QDs with graphene to create high-performance photodetectors with broadband response and long-term stability. This hybrid utilizes the broad absorption spectrum of PbS QDs and the ultrafast carrier mobility of graphene. This type of photodetector can be used for near-infrared photodetection, but it can only achieve optical mode detection and cannot simultaneously achieve dual-mode detection. Summary of the Invention

[0003] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a force-light dual-modal ionized lead sulfide quantum dot sensor and a preparation method thereof, so as to solve the problem that the existing graphene-PbS quantum dot hybrid photoelectric detector cannot achieve force-light dual-modal detection.

[0004] In order to achieve the above object, the present invention adopts the following technical solutions:

[0005] In a first aspect, the present invention provides a force-light dual-modal ionized lead sulfide quantum dot sensor, comprising a substrate electrode layer, a PbS QDs thin film layer, and an ion gel thin film layer; wherein the PbS QDs thin film layer is deposited on the substrate electrode layer, and the ion gel thin film layer is deposited on the PbS QDs thin film layer.

[0006] Preferably, in the above-mentioned force-light dual-modal ionized lead sulfide quantum dot sensor, the substrate electrode layer includes an insulating film layer and interdigitated electrodes, the interdigitated electrodes are arranged on the insulating film layer, and the interdigitated electrodes are in contact with the PbSQDs film layer.

[0007] Preferably, in the above-mentioned Liguang dual-modal ionized lead sulfide quantum dot sensor, the PbS QDs thin film layer is composed of multiple spin-coated thin film unit layers, and the thin film unit layers are composed of PbS QDs solution, EDT acetonitrile mixture, acetonitrile, toluene and IPA spin-coated in sequence.

[0008] Preferably, in the above-mentioned force-light dual-modal ionized lead sulfide quantum dot sensor, the PbS QDs thin film layer is composed of 2, 4 or 6 spin-coated thin film unit layers.

[0009] Preferably, in the above-mentioned Liguang dual-modal ionized lead sulfide quantum dot sensor, the ion gel film layer is formed by spin coating an ion gel layer, and the ion gel layer is composed of PVA, water and phosphoric acid or PVDF-HFP, DMF, acetone and 1-ethyl-3-methylimidazole bistrifluoromethanesulfonyl imide salt.

[0010] Preferably, in the above-mentioned Liguang dual-mode ionized lead sulfide quantum dot sensor, when the ion gel layer is composed of PVA, water and phosphoric acid, the weight ratio of PVA, water and phosphoric acid is 0.8-1.2:8.5-9.5:0.8-1.2;

[0011] When the ion gel layer is composed of PVDF-HFP, DMF, acetone and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt, the weight ratio of PVDF-HFP, DMF, acetone and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt is 1-3:4-6:1-3:4-6.

[0012] In a second aspect, the present invention provides a method for preparing the force-light dual-modal ionized lead sulfide quantum dot sensor as described in the first aspect, the preparation method comprising:

[0013] Spin coating a PbS QDs thin film layer on the substrate electrode layer;

[0014] The PbS QDs thin film layer is spin-coated on the PbS QDs thin film layer to obtain the force-light dual-mode ionized lead sulfide quantum dot sensor.

[0015] Preferably, in the above-mentioned method for preparing the dual-mode ionized lead sulfide quantum dot sensor, spin coating the PbS QDs thin film layer on the substrate electrode layer comprises:

[0016] The following spin coating steps are performed on the substrate electrode layer to obtain a thin film unit layer:

[0017] a) applying a PbS QDs solution on the substrate electrode layer and executing a spin coating instruction;

[0018] b) coating

[0019] Acetonitrile solution covers the entire surface, performs ligand replacement, and executes a spin coating instruction after a preset rest time;

[0020] c) Apply acetonitrile to cover the entire surface and execute a spin coating instruction;

[0021] d) Apply toluene to cover the entire surface and execute a spin coating instruction;

[0022] e) Apply IPA to cover the entire surface and execute a spin coating instruction;

[0023] The spin coating step is repeated n times to form a plurality of thin film unit layers on the substrate electrode layer, thereby spin coating the PbS QDs thin film layer on the substrate electrode layer.

[0024] Preferably, in the method for preparing the above-mentioned dual-mode ionized lead sulfide quantum dot sensor, the PbS QDs thin film layer is spin-coated on the PbS QDs thin film layer, comprising:

[0025] placing an ionic liquid sample consisting of PVA, water, acid or PVDF-HFP, DMF, acetone, and salt on the surface of the PbS QDs film layer;

[0026] Based on the set spin coating parameters, a drying process is performed using a spin coater with the set spin coating parameters to obtain a PbSQDs thin film layer.

[0027] Preferably, in the above-mentioned method for preparing the force-light dual-modal ionized lead sulfide quantum dot sensor, the set spin coating parameters are spin coating at a rotation speed of 2500 to 3500 r for 15 to 45 seconds.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] Under illumination, light passes through the transparent ion gel film layer and reaches the PbS QDs film layer. The high photoelectric conversion efficiency of PbS QDs efficiently converts the absorbed light energy into electrical energy, completing optical signal detection. By measuring the current change of the sensor, the pressure signal change can be read. Under pressure, the piezoelectric capacitance effect of the electronic double layer is generated in the ion gel film layer. When the ionic material contacts the electrode, an electronic double layer is formed at the contact interface. Under the action of pressure, the contact area between the electrode and the ionic material increases, causing the interface capacitance value to change. By measuring the capacitance change of the sensor, the pressure signal change can be read, thereby realizing force-light dual-modal detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0031] Figure 1 An exploded structural diagram of a force-light dual-modal ionized lead sulfide quantum dot sensor provided in an embodiment of the present invention.

[0032] Figure 2 A structural diagram of a method for preparing a force-light dual-modal ionized lead sulfide quantum dot sensor provided in an embodiment of the present invention.

[0033] Figure 3 A flow chart of a method for preparing a force-light dual-modal ionized lead sulfide quantum dot sensor provided in an embodiment of the present invention.

[0034] Figure 4 This is a pressure capacitance response diagram of the sensor obtained in Example 1 provided in an embodiment of the present invention.

[0035] Figure 5 This is a pressure capacitance response diagram of the sensor obtained in Example 2 provided in an embodiment of the present invention.

[0036] Figure 6 This is a pressure capacitance response diagram of the sensor obtained in Example 3 provided in an embodiment of the present invention.

[0037] Figure 7 This is a pressure capacitance response diagram of the sensor obtained in Example 4 provided in an embodiment of the present invention.

[0038] Figure 8 This is a comprehensive response diagram of different ion gel pressure capacitance tests provided by an embodiment of the present invention.

[0039] Figure 9 This is a current response diagram of the sensor prepared in Example 5 provided in an embodiment of the present invention.

[0040] Figure 10 This is a current response diagram of the sensor prepared in Example 6 provided in an embodiment of the present invention.

[0041] Figure 11 This is a current response diagram of the sensor prepared in Example 7 provided in an embodiment of the present invention.

[0042] Reference numerals:

[0043] 100, substrate electrode layer; 101, insulating film layer; 102, interdigital electrodes;

[0044] 200, PbS QDs thin film layer;

[0045] 300. Ion gel film layer. DETAILED DESCRIPTION

[0046] The following describes the embodiments of the present invention through specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. The details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other unless they conflict.

[0047] In the description of the present invention, unless otherwise specified, "plurality" means two or more. Terms such as "upper," "lower," "left," "right," "inner," "outer," "front end," "rear end," "head," and "tail" indicate positions or relationships based on those shown in the accompanying drawings. These terms are intended solely to facilitate the description of the present invention and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limiting the present invention. Furthermore, terms such as "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying their relative importance.

[0048] In the description of the present invention, it should be noted that, unless otherwise specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integral connection; mechanical connection, electrical connection; direct connection, or indirect connection through an intermediary. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0049] The present invention will now be further described with reference to the accompanying drawings.

[0050] Glossary:

[0051] PbS QDs: lead sulfide quantum dots.

[0052] FPC: Flexible printed circuit board.

[0053] PET: Polyethylene terephthalate resin.

[0054] EDT: 1,2-ethanedithiol.

[0055] IPA: Isopropyl alcohol.

[0056] PVDF-HFP: polyvinylidene fluoride-hexafluoropropylene.

[0057] DMF: N,N-dimethylacetamide.

[0058] PVA: polyvinyl alcohol.

[0059] Example 1:

[0060] Figure 1 The exploded structure diagram of a Liguang dual-mode ionized lead sulfide quantum dot sensor provided by an embodiment of the present invention. The embodiment of the present invention provides a Liguang dual-mode ionized lead sulfide quantum dot sensor, such as Figure 1 As shown, the force-light dual-mode ionized lead sulfide quantum dot sensor includes a substrate electrode layer 100, a PbS QDs thin film layer 200, and an ion gel thin film layer 300; wherein the substrate electrode layer 100, the PbS QDs thin film layer 200, and the ion gel thin film layer 300 are stacked in sequence from bottom to top to form a three-layer sensor structure, that is, Figure 2 As shown, the PbS QDs thin film layer 200 is deposited on the substrate electrode layer 100 , and the ion gel thin film layer 300 is deposited on the PbS QDs thin film layer 200 .

[0061] The connection or assembly relationship of the force-light dual-modal ionized lead sulfide quantum dot sensor is as follows: the bonding method of the PbS QDs thin film layer 200 and the substrate electrode layer 100 is spin coating, the PbS QDs thin film layer 200 is spin coated onto the substrate electrode layer 100, and then the ion gel thin film layer 300 is spin coated onto the PbS QDs thin film layer 200 to form the designed three-layer sensor.

[0062] The working principle of the Liguang dual-mode ionized lead sulfide quantum dot sensor is:

[0063] Under illumination, light passes through the transparent ion gel film and reaches the PbS QDs film. The high photoelectric conversion efficiency of the PbS QDs allows them to efficiently convert the absorbed light energy into electrical energy, completing the optical signal detection. By measuring the sensor's current change, the pressure signal can be read.

[0064] Under pressure, the piezoelectric capacitance effect of an electronic double layer is generated within the ion gel film. When the ionic material contacts the electrode, an electronic double layer forms at the interface. Under pressure, the contact area between the electrode and the ionic material increases, causing the interfacial capacitance to change. By measuring this change in capacitance, the pressure signal can be read.

[0065] In some embodiments, as Figure 2 As shown, the substrate electrode layer 100 includes an insulating film layer 101 and interdigital electrodes 102 . The interdigital electrodes 102 are disposed on the insulating film layer 101 , and the interdigital electrodes 102 are in contact with the PbS QDs film layer 200 .

[0066] For example, the substrate electrode layer 100 may be made of FPC, the insulating film layer 101 may be PET, and the electrode structure may be fine-pitch interdigitated electrodes 102. For example, the interdigitated electrodes 102 may be 1 cm*1 cm FPC flexible interdigitated electrodes (electrode spacings are 100 μm, 200 μm, and 500 μm, respectively).

[0067] In some embodiments, the PbS QDs thin film layer is composed of a plurality of spin-coated thin film unit layers, each of which is composed of a PbS QDs solution, an EDT-acetonitrile mixture, acetonitrile, toluene, and IPA that are spin-coated in sequence.

[0068] In some embodiments, the PbS QDs thin film layer is composed of 2, 4, or 6 thin film unit layers that are spin-coated.

[0069] In some embodiments, the ion gel film layer is formed by spin coating an ion gel layer composed of PVA, water and phosphoric acid or PVDF-HFP, DMF, acetone and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide.

[0070] In some embodiments, when the ion gel layer is composed of PVA, water and phosphoric acid, the weight ratio of PVA, water and phosphoric acid is 0.8-1.2:8.5-9.5:0.8-1.2; when the ion gel layer is composed of PVDF-HFP, DMF, acetone and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt, the weight ratio of PVDF-HFP, DMF, acetone and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt is 1-3:4-6:1-3:4-6.

[0071] Example 2:

[0072] The embodiment of the present invention provides a method for preparing a Liguang dual-mode ionized lead sulfide quantum dot sensor. The specific structure of the Liguang dual-mode ionized lead sulfide quantum dot sensor is as described in Example 1 and will not be described in detail here. Figure 3 , which is a flow chart of the preparation method of the Liguang dual-modal ionized lead sulfide quantum dot sensor. The Liguang dual-modal ionized lead sulfide quantum dot sensor is prepared by the following steps S10 and S20.

[0073] S10: Spin-coating a PbS QDs thin film layer on the substrate electrode layer.

[0074] S20: Spin-coating the PbS QDs thin film layer on the PbS QDs thin film layer to obtain a force-light dual-mode ionized lead sulfide quantum dot sensor.

[0075] In step S10, the purpose is to prepare a PbS QDs thin film layer, and step S10 specifically includes the following steps:

[0076] S11. Prepare a ligand exchange solvent. The ligand exchange solvent includes a PbS QDs solution, an EDT acetonitrile solution, acetonitrile, toluene, and IPA. The weight ratio of EDT to acetonitrile in the EDT acetonitrile solution is 1:50.

[0077] S12, preparing a substrate electrode layer. In this embodiment, 1 cm*1 cm FPC flexible interdigital electrodes (electrode spacings of 100 um, 200 um, and 500 um, respectively) are used as the substrate electrode layer.

[0078] S13, preparing a thin film unit layer, comprising the following steps:

[0079] a) Coating PbS QDs and immediately running a spin coating command;

[0080] b) Apply EDT:acetonitrile (1:50) to cover the entire surface for ligand replacement. Let it sit for 1 minute and then run a spin coating command.

[0081] c) Apply acetonitrile to cover the entire surface and run a spin coating command;

[0082] d) Apply toluene to cover the entire surface and run a spin coating command;

[0083] e) Apply IPA (isopropyl alcohol) to cover the entire surface and run a spin coating command.

[0084] It should be noted that the spin coating instruction refers to an instruction for controlling the operation of the spin coater according to set parameters, and the set parameters are generally the rotation speed and the spin coating time.

[0085] S14. Repeat spin coating 2 / 4 / 6 layers as a whole, and then heat at 80°C for 10 minutes to obtain a PbS QDs thin film layer on the substrate electrode layer.

[0086] In step S20, the ion gel film layer is formed by spin coating a layer of ion gel. The transparent ion gel layer can be made of a variety of materials such as: PVA, water, phosphoric acid or PVDF-HFP, DMF, acetone, 1-ethyl-3-methylimidazole bis(trifluoromethanesulfonyl)imide salt.

[0087] The specific production method is:

[0088] Pour an ionic liquid sample consisting of PVA, water, acid, or PVDF-HFP, DMF, acetone, and salt onto the surface of the substrate electrode layer. Place the substrate on a spin coater. Start the spin coater and spin at 3000 rpm for 30 seconds. After stopping, dry the spin coater to form an ion gel film.

[0089] The weight ratio of the ion gel film is as follows:

[0090] PVA (polyvinyl alcohol): water: H3PO4 (phosphoric acid) = 1:9:1;

[0091] PVDF-HFP (polyvinylidene fluoride-hexafluoropropylene):DMF (N,N-dimethylacetamide):acetone:1-ethyl 3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt=2:5:5:2.

[0092] Based on the above steps and principles, an implementation case will be formed with different ratio combinations, and the performance parameters of the sensors prepared in each implementation case will be tested to further demonstrate the feasibility and progress of the present invention.

[0093] Example 1: 2g PVDF-HFP: 5g DMF: 5g acetone: 2g 1-ethyl 3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt was used to prepare an ion gel film layer, where the film weight was 2g. A sensor made of a lead sulfide film layer (PbS QDs film layer) and a gold electrode was used to measure its pressure capacitance response. Figure 4 shown.

[0094] Example 2: 2g PVDF-HFP: 5g DMF: 5g acetone: 3g 1-ethyl 3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt was used to make an ion gel film layer, where the film weight was 3g. The pressure capacitance response of the sensor made of lead sulfide film layer was measured as follows: Figure 5 shown.

[0095] Example 3: 2g PVA, 18g water, and 2g H3PO4 were used to make an ion gel film layer, where the film weight was 2g. The pressure capacitance response of the sensor made of lead sulfide film layer and gold electrode was measured as follows: Figure 6 shown.

[0096] Example 4: 2g PVA, 18g water, 3g H3PO4 were used to make an ion gel film layer, where the film weight was 3g. The pressure capacitance response of the sensor made of lead sulfide film layer and gold electrode was measured as follows: Figure 7 shown.

[0097] Figure 8 The following is a summary and comparison of the pressure capacitance response performance of the above four cases. The following conclusions can be drawn:

[0098] 1. The best performance is Figure 6 , the ion gel used was PVA+H3PO4 (film weight was 2 g);

[0099] 2. As the weight of the film increases, the responsiveness decreases (the responsiveness to 2g pressure is better than 3g);

[0100] 3. The overall performance of the ion gel film of PVA+H3PO4 is better than that of the ion gel film of PVDF-HFP+1-ethyl 3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt.

[0101] It should be noted that in Case 1-4, the number of lead sulfide quantum dot thin film layers (PbS QDs thin film layers) spin-coated on the device is 4 layers, and the spin-coating method is as described in S13 above.

[0102] Implementation Case 5: Spin-coating 2 layers of lead sulfide thin film, and obtaining a current response such as Figure 9 As shown, the photosensitivity was tested with a voltage of 1V and its responsivity was R = 6.2×10 -10 A / W.

[0103] Implementation Case 6: Spin-coating 4 layers of lead sulfide thin film, the current response is as follows Figure 10 As shown, the photosensitivity is tested with a voltage of 1V and its responsivity is R = 1.5×10 -8 A / W.

[0104] Implementation Case 7: Spin-coating 6 layers of lead sulfide thin film, the current response is as follows Figure 11 As shown, the photosensitivity was tested with a voltage of 1 V and the response was R = 1.68 × 10 -8 A / W.

[0105] Implementation Case 5: Spin-coating 2 layers of lead sulfide thin film, and obtaining a current response such as Figure 9 As shown in Figure 2, under the conditions of 1550nm near-infrared laser and 1V bias voltage, the obtained photoresponsivity is R = 6.2×10 -10 A / W, its response is poor.

[0106] Implementation Case 6: Spin-coating 4 layers of lead sulfide thin film, the current response is as follows Figure 10 As shown in the figure, under the conditions of 1550nm laser and 1V bias voltage, the obtained responsivity is R=1.5×10-8A / W, which is significantly improved compared with Case 5, by two orders of magnitude. It can be concluded that the performance of the four-layer quantum dots is better.

[0107] Implementation Case 7: Spin-coating 6 layers of lead sulfide thin film, the current response is as follows Figure 11 As shown in the figure, under the conditions of 1550nm laser and 1V bias voltage, the obtained responsivity is R=1.68×10-8A / W, which is significantly improved compared with Case 5, by two orders of magnitude, but is only slightly improved compared with the responsivity of Implementation Case 6. It can be concluded that the performance of six-layer quantum dots is better, but the performance improvement is limited compared with four-layer quantum dots.

[0108] It should be noted that in Implementation Cases 5-7, the ion gel film layer used is the ion gel film layer mentioned in Implementation Case 3, and the production solution materials are 2g PVA, 18g water, and the added ions are 2g H3PO4, and the weight of the film is 2g.

[0109] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention, and they should all be included in the scope of the claims and description of the present invention.

Claims

1. A dual-mode ionized lead sulfide quantum dot sensor, characterized in that: It includes a substrate electrode layer, a PbS QDs film layer and an ion gel film layer; wherein the PbS QDs film layer is applied on the substrate electrode layer, and the ion gel film layer is applied on the PbS QDs film layer.

2. The power-light dual-mode ionized lead sulfide quantum dot sensor according to claim 1, characterized in that: The substrate electrode layer includes an insulating film layer and interdigital electrodes. The interdigital electrodes are arranged on the insulating film layer, and the interdigital electrodes are in contact with the PbS QDs film layer.

3. The power-light dual-mode ionized lead sulfide quantum dot sensor according to claim 1, characterized in that: The PbS QDs thin film layer is composed of a plurality of thin film unit layers which are spin-coated, and the thin film unit layers are composed of a PbS QDs solution, an EDT acetonitrile mixed solution, acetonitrile, toluene and IPA which are spin-coated in sequence.

4. The power-light dual-mode ionized lead sulfide quantum dot sensor according to claim 3, characterized in that: The PbSQDs thin film layer is composed of 2, 4 or 6 spin-coated thin film unit layers.

5. The power-light dual-mode ionized lead sulfide quantum dot sensor according to claim 1, characterized in that: The ion gel film layer is formed by spin coating an ion gel layer, wherein the ion gel layer is composed of PVA, water and phosphoric acid or PVDF-HFP, DMF, acetone and 1-ethyl-3-methylimidazole bis(trifluoromethanesulfonyl)imide salt.

6. The force-light dual-mode ionized lead sulfide quantum dot sensor according to claim 5, characterized in that: When the ion gel layer is composed of PVA, water and phosphoric acid, the weight ratio of PVA, water and phosphoric acid is 0.8-1.2:8.5-9.5:0.8-1.2; When the ion gel layer is composed of PVDF-HFP, DMF, acetone and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt, the weight ratio of PVDF-HFP, DMF, acetone and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt is 1-3:4-6:1-3:4-6.

7. A method for preparing a Liguang dual-mode ionized lead sulfide quantum dot sensor according to any one of claims 1 to 6, characterized in that: The preparation method comprises: Spin coating a PbS QDs thin film layer on the substrate electrode layer; The PbS QDs thin film layer is spin-coated on the PbS QDs thin film layer to obtain the force-light dual-mode ionized lead sulfide quantum dot sensor.

8. The preparation method according to claim 7, characterized in that Spin coating a PbS QDs thin film layer on a substrate electrode layer, including: The following spin coating steps are performed on the substrate electrode layer to obtain a thin film unit layer: a) applying a PbS QDs solution on the substrate electrode layer and executing a spin coating instruction; b) Apply EDT: acetonitrile solution to cover the entire surface, perform ligand replacement, and execute a spin coating command after a preset rest time; c) Apply acetonitrile to cover the entire surface and execute a spin coating instruction; d) Apply toluene to cover the entire surface and execute a spin coating instruction; e) Apply IPA to cover the entire surface and execute a spin coating instruction; The spin coating step is repeated n times to form a plurality of thin film unit layers on the substrate electrode layer, thereby spin coating the PbSQDs thin film layer on the substrate electrode layer.

9. The preparation method according to claim 7, characterized in that Spin coating the PbS QDs thin film layer on the PbS QDs thin film layer, including: placing an ionic liquid sample consisting of PVA, water, acid or PVDF-HFP, DMF, acetone, and salt on the surface of the PbS QDs film layer; Based on the set spin coating parameters, a drying process is performed using a spin coater with the set spin coating parameters to prepare a PbS QDs thin film layer.

10. The preparation method according to claim 9, characterized in that The set spin coating parameters are spin coating at a rotation speed of 2500 to 3500 r for 15 to 45 seconds.

Images