Solar cell passivation layer preparation process, passivation layer structure and solar cell

Abstract

The invention specifically discloses a solar cell passivation layer preparation process, a passivation layer structure and a solar cell, and belongs to the technical field of solar cells. The composite aluminum oxide layer is formed through alternate deposition of the ozone aluminum oxide layer and the water aluminum oxide layer, and the high-temperature crystallization annealing and high-temperature silicon oxide layer forming processes are combined, so that the proportion of Si-H bonds in the passivation layer is remarkably reduced, and the UV attenuation resistance is improved. Dense aluminum oxide is generated through an ozone process, and H < + > required by passivation is supplemented through a water process; the amorphous aluminum oxide is converted into metastable crystal phase aluminum oxide through high-temperature crystallization, and generation of silicon-hydrogen bonds on a silicon interface is reduced; the high-temperature silicon oxide layer blocks hydrogen migration, the interface state defect of crystallized aluminum oxide is repaired, and the silicon-hydrogen bond capacity of a silicon substrate interface is further reduced; and through the cooperation of multiple layers of structures, the anti-UV performance of the solar cell is effectively improved, and the solar cell is suitable for large-scale production of Topcon and BC cells.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a solar cell passivation layer preparation process and passivation layer structure, and a solar cell. Background Art

[0002] Solar cells are key devices for converting solar energy into electrical energy. Their performance stability and reliability are crucial for the efficient operation of photovoltaic power generation systems. However, over long-term use, solar cells are exposed to ultraviolet (UV) radiation, which can cause cell performance degradation, primarily manifested as a decrease in power generation.

[0003] Currently, in the preparation process of solar cells, there are two main aluminum oxide passivation layer deposition processes commonly used: water + TMA process and ozone + TMA process.

[0004] The water + TMA process is a traditional aluminum oxide deposition method. Its principle is to form an aluminum oxide layer on the surface of the solar cell through the reaction of water and TMA. During this process, hydrogen atoms in the water molecules accumulate in the aluminum oxide layer, providing a certain degree of passivation for the cell. However, this process has significant disadvantages. When the solar cell is exposed to ultraviolet light, the Si-H bonds in the aluminum oxide layer are easily broken, causing the passivation at the silicon interface to fail, thereby reducing the cell's performance. Long-term ultraviolet exposure will gradually reduce the cell's power generation, affecting the solar cell's service life and power generation efficiency.

[0005] The ozone + TMA process uses the reaction of ozone and TMA to deposit an aluminum oxide layer. Compared to the water + TMA process, the aluminum oxide layer formed by the ozone + TMA process contains fewer hydrogen atoms, resulting in a relatively small number of Si-H bonds. While this process reduces the possibility of Si-H bonds breaking due to UV exposure, the low hydrogen content results in a weaker passivation effect, significantly reducing cell efficiency.

[0006] In summary, the existing aluminum oxide passivation layer deposition process for solar cells has deficiencies in UV resistance and cannot meet the requirements for long-term stable operation of solar cells. Therefore, developing an aluminum oxide passivation layer process that can effectively improve the UV performance of solar cells is of great practical significance. Summary of the Invention

[0007] This application addresses the above-mentioned problems, remedies the deficiencies of the existing technology, and provides a solar cell passivation layer preparation process and passivation layer structure, and a solar cell; this application significantly improves the anti-UV aging ability while maintaining the passivation performance by preparing a composite alumina structure and a high-temperature treatment process, thus filling the gaps in the existing technology.

[0008] The technical solution of this application is:

[0009] A process for preparing a passivation layer of a solar cell comprises the following steps:

[0010] S1. Deposition of an ozone aluminum oxide layer: An ozone aluminum oxide layer is deposited on the surface of a silicon substrate by alternating the flow of O3 and TMA through an ALD process;

[0011] S2. Deposition of a hydrous aluminum oxide layer: On the surface of the ozone aluminum oxide layer, a hydrous aluminum oxide layer is deposited by alternately introducing H2O and TMA through an ALD process;

[0012] S3 high temperature crystallization annealing: In an inert gas environment, the silicon substrate formed of a water aluminum oxide layer is subjected to high temperature crystallization annealing;

[0013] S4. Forming a high-temperature silicon oxide layer: performing oxidation treatment on the annealed silicon substrate in an oxygen-containing gas environment to form a high-temperature silicon oxide layer.

[0014] Furthermore, the thickness of the ozone aluminum oxide layer is 2-4 nm, the thickness of the hydrated aluminum oxide layer is 3-7 nm, and the thickness of the high-temperature silicon oxide layer is 1-3 nm.

[0015] Furthermore, the deposition temperature of the ozone aluminum oxide layer is 200-300°C, the deposition temperature of the hydrous aluminum oxide layer is 200-300°C, and the high-temperature crystallization annealing temperature is 600-800°C.

[0016] Furthermore, the process parameters of S1 are:

[0017] The O3 pulse time is 5-15 seconds, the process flow rate is 15-35 sccm, and the number of cycles is 5-15 times;

[0018] The TMA pulse time is 5-15 seconds, the process flow rate is 15-35 sccm, and the number of cycles is 5-15 times.

[0019] Furthermore, the process parameters of S2 are:

[0020] The H2O pulse time is 5-15 seconds, the process flow rate is 15-35 sccm, and the number of cycles is 25-35 times;

[0021] The TMA pulse time is 5-15 seconds, the process flow rate is 15-35 sccm, and the number of cycles is 25-35 times;

[0022] Furthermore, in S3, the inert gas is nitrogen or argon, the process time is 10-30 minutes, and the gas flow rate is 5-15 slm.

[0023] Furthermore, in S4, the process time is 10-30 min, the oxygen-containing gas is O2 or O3, and the gas flow rate is 5-15 slm.

[0024] A battery passivation layer structure is prepared by the above preparation process, comprising an ozone aluminum oxide layer, a hydrous aluminum oxide layer and a high-temperature silicon oxide layer stacked in sequence.

[0025] A solar cell comprises the above-mentioned cell passivation layer structure.

[0026] Furthermore, the solar cell is a TOPCon cell or a back contact cell.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] The high-density battery passivation layer structure formed by the composite process of ozone aluminum oxide + hydrated aluminum oxide + high-temperature crystallization annealing + high-temperature silicon oxide in this application can greatly reduce the interface silicon-hydrogen bond, reduce the ability of silicon-hydrogen bonds to be destroyed under ultraviolet light, and reduce H + Under the influence of the passivation layer, the anti-ultraviolet attenuation ability of cells and components is enhanced; significantly superior to traditional water processes and ozone processes, it can maintain more stable power generation efficiency in ultraviolet environments, extend service life, and reduce the cost of photovoltaic power generation. DETAILED DESCRIPTION

[0029] The present application provides a method for preparing a passivation layer of a solar cell, a process for preparing a passivation layer of a solar cell, comprising the following steps:

[0030] S1. Deposition of an ozone aluminum oxide layer: An ozone aluminum oxide layer is deposited on the surface of a silicon substrate by alternating the flow of O3 and TMA through an ALD process;

[0031] By first reacting O3 with TMA to produce aluminum oxide on the silicon substrate, the ALD process using O3 as an oxygen precursor produces a denser aluminum oxide film with a significantly lower OH group concentration (approximately 50%), lower porosity, and a water vapor transmission rate (WVTR) that is only one-third of that of a water-based process. Interface passivation uses Si-O bonds instead of Si-H bonds, which are more stable than Si-H bonds (silicon dioxide is very unstable and will spontaneously combust in air to form silicon dioxide and water. This is a transition from unstable to stable; the more stable the substance, the greater the bond energy). This reduces the amount of damage caused by UV irradiation and maintains a good passivation effect.

[0032] S2. Deposition of a hydrous aluminum oxide layer: On the surface of the ozone aluminum oxide layer, a hydrous aluminum oxide layer is deposited by alternately introducing H2O and TMA through an ALD process;

[0033] Then, another layer of aluminum oxide is generated by reacting H2O+TMA. The aluminum oxide film generated by the water process as a water-based ALD has more residual hydroxyl groups (-OH), which can make up for the H passivation ability. The Si-H bond has stronger passivation ability than the Si-O bond, which is more helpful in maintaining efficiency.

[0034] S3 high temperature crystallization annealing: In an inert gas environment, the silicon substrate formed of a water aluminum oxide layer is subjected to high temperature crystallization annealing;

[0035] By crystallizing the composite alumina structure formed on the surface of the silicon substrate at high temperature, the Al2O3 deposited at low temperature by the ALD process is usually amorphous. However, high temperature annealing will cause lattice rearrangement, and some areas may form γ-Al2O3 (density 3.42g / cm 3 ) and other metastable phases. Annealing enhances atomic diffusion, reduces the porosity of the film, and the density decreases from about 3.0 g / cm 3 (Amorphous state) theoretical value 3.97 g / cm 3 The unstable hydroxyl groups (-OH) remaining in the water ALD process can also be decomposed at high temperatures to release H2O or H2, reducing chemical defects and the presence of H; densification and reduction of grain boundaries can enhance the barrier ability to hydrogen and sodium ions and reduce the formation of silicon-hydrogen bonds at the silicon interface.

[0036] S4. Forming a high-temperature silicon oxide layer: performing oxidation treatment on the annealed silicon substrate in an oxygen-containing gas environment to form a high-temperature silicon oxide layer.

[0037] SiO2 has an amorphous structure with densely packed atoms and high chemical stability, forming a continuous physical barrier that effectively hinders hydrogen diffusion. Its compactness reduces pathways for hydrogen migration, allowing it to maintain structural integrity, especially at high process temperatures. The SiO2 surface is rich in hydroxyl groups (-OH) and oxygen dangling bonds, which can fix hydrogen atoms by forming Si-OH bonds or chemical adsorption, reducing their migration activity. SiO2 is not prone to decomposition or structural changes during high-temperature annealing or ion implantation, maintaining its continuous barrier to hydrogen. It has fewer interface defects with the silicon substrate, inhibiting hydrogen aggregation at the interface. The silicon oxide layer repairs the interface defects of the crystallized aluminum oxide, further reducing the silicon-hydrogen bonding capacity at the silicon substrate interface.

[0038] The following will clearly and completely describe the technical solutions of the present invention in conjunction with specific embodiments. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0039] Example 1

[0040] This embodiment provides a method for preparing a passivation layer of a solar cell, comprising the following steps:

[0041] S1. Deposition of an ozone aluminum oxide layer: A silicon substrate was placed in an ALD reaction chamber and ozone atomic layer deposition (ALD) was performed at 300°C. First, an O3 pulse was applied with a pulse duration of 15 seconds and a flow rate of 35 sccm, followed by a purge. Next, a TMA pulse was applied with a pulse duration of 15 seconds and a process flow rate of 35 sccm, followed by a purge. Fifteen cycles of alternating O3 and TMA pulses were performed to form an ozone aluminum oxide layer on the silicon substrate.

[0042] S2. Deposition of a Hydrous Aluminum Oxide Layer: After the ozone aluminum oxide layer is formed, maintain the reaction chamber temperature at 300°C and perform a water atomic layer deposition process. Set the H2O pulse duration to 15 seconds, the process flow rate to 35 sccm, and purge after the pulse ends. Set the TMA pulse duration to 15 seconds, the flow rate to 35 sccm, and purge after the pulse ends. Alternate H2O and TMA pulses are cycled 35 times to form a hydrous aluminum oxide layer on the ozone aluminum oxide layer.

[0043] S3. High-temperature crystallization annealing: The silicon substrate with the composite alumina layer (ozone alumina layer + hydrated alumina layer) is subjected to high-temperature crystallization annealing at 800°C for 30 minutes with nitrogen gas at 15slm. Al2O3 deposited by ALD at 300°C is usually amorphous. Annealing at 800°C will cause lattice rearrangement to form γ-Al2O3 (density 3.42g / cm 3 ) and other metastable crystal phase structures; and high temperature annealing enhances atomic diffusion, and the porosity of the formed film decreases, and the density decreases from about 3.0g / cm 3 (amorphous state) to the theoretical value of α-Al2O33.97g / cm 3 Approaching.

[0044] S4. Forming a high-temperature silicon oxide layer: At a high temperature of 800° C., 15 slm of oxygen is introduced to oxidize the annealed composite aluminum oxide layer for 30 minutes to form a high-temperature silicon oxide layer on the surface of the composite aluminum oxide layer.

[0045] Example 2

[0046] This embodiment provides a method for preparing a passivation layer of a solar cell, comprising the following steps:

[0047] S1. Deposition of an ozone aluminum oxide layer: A silicon substrate was placed in an ALD reaction chamber and ozone atomic layer deposition (ALD) was performed at 250°C. First, an O3 pulse was applied with a pulse duration of 10 seconds and a flow rate of 25 sccm, followed by a purge. Next, a TMA pulse was applied with a pulse duration of 10 seconds and a process flow rate of 25 sccm, followed by a purge. Ten cycles of alternating O3 and TMA pulses were repeated to form an ozone aluminum oxide layer on the silicon substrate.

[0048] S2. Deposition of a Hydrous Aluminum Oxide Layer: After the ozone aluminum oxide layer is formed, maintain the reaction chamber temperature at 250°C and perform a water atomic layer deposition process. Set the H2O pulse duration to 10 seconds, the process flow rate to 25 sccm, and purge after the pulse ends. Set the TMA pulse duration to 10 seconds, the flow rate to 25 sccm, and purge after the pulse ends. Alternate H2O and TMA pulses are cycled 30 times to form a hydrous aluminum oxide layer on the ozone aluminum oxide layer.

[0049] S3. High-temperature crystallization annealing: The silicon substrate with the composite aluminum oxide layer (ozone aluminum oxide layer + hydrated aluminum oxide layer) is subjected to high-temperature crystallization annealing; that is, at 700°C, nitrogen gas is introduced at 10slm for 20 minutes. Al2O3 deposited by ALD at a low temperature of 250°C is usually amorphous. High-temperature annealing at 700°C will induce lattice rearrangement to form γ-Al2O3 (density 3.42g / cm 3 ) and other metastable crystal phase structures; and high temperature annealing enhances atomic diffusion, and the porosity of the formed film decreases, and the density decreases from about 3.0g / cm 3 (amorphous state) to the theoretical value of α-Al2O33.97g / cm 3 Approaching.

[0050] S4. Forming a high-temperature silicon oxide layer: At a high temperature of 700° C., 10 slm of oxygen is introduced to oxidize the annealed composite aluminum oxide layer for 20 minutes to form a high-temperature silicon oxide layer on the surface of the composite aluminum oxide layer.

[0051] Example 3

[0052] This embodiment provides a method for preparing a passivation layer of a solar cell, comprising the following steps:

[0053] S1. Deposition of an ozone aluminum oxide layer: A silicon substrate was placed in an ALD reaction chamber and ozone atomic layer deposition (ALD) was performed at 200°C. First, an O3 pulse was applied with a pulse duration of 5 seconds and a flow rate of 15 sccm, followed by a purge. Next, a TMA pulse was applied with a pulse duration of 5 seconds and a process flow rate of 15 sccm, followed by a purge. Five cycles of alternating O3 and TMA pulses were repeated to form an ozone aluminum oxide layer on the silicon substrate.

[0054] S2. Deposition of a Hydrous Aluminum Oxide Layer: After the ozone aluminum oxide layer is formed, maintain the reaction chamber temperature at 200°C and perform a water atomic layer deposition process. Set the H2O pulse duration to 5 seconds, the process flow rate to 15 sccm, and purge after the pulse ends. Set the TMA pulse duration to 5 seconds, the flow rate to 15 sccm, and purge after the pulse ends. Alternate H2O and TMA pulses are cycled 25 times to form a hydrous aluminum oxide layer on the ozone aluminum oxide layer.

[0055] S3. High-temperature crystallization annealing: The silicon substrate with the composite aluminum oxide layer (ozone aluminum oxide layer + hydrated aluminum oxide layer) is subjected to high-temperature crystallization annealing; that is, at 600°C, 5slm of nitrogen is introduced for 10 minutes. Al2O2 deposited by ALD at a low temperature of 200°C is usually amorphous. High-temperature annealing at 600°C will induce lattice rearrangement to form γ-Al2O3 (density 3.42g / cm 3 ) and other metastable crystal phase structures; and high temperature annealing enhances atomic diffusion, and the porosity of the formed film decreases, and the density decreases from about 3.0g / cm 3 (amorphous state) to the theoretical value of α-Al2O33.97g / cm 3 Approaching.

[0056] S4. Forming a high-temperature silicon oxide layer: At a high temperature of 600° C., 5 slm of oxygen is introduced to oxidize the annealed composite aluminum oxide layer for 10 minutes to form a high-temperature silicon oxide layer on the surface of the composite aluminum oxide layer.

[0057] Example 3

[0058] This embodiment provides a method for preparing a passivation layer of a solar cell, which differs from Example 3 in that in steps S3 and S4, the process temperature is 550° C., and the rest of the preparation process and parameters remain the same as those in Example 3.

[0059] Comparative Example 1

[0060] This comparative example provides a method for preparing a passivation layer of a solar cell. The difference between the comparative example and Example 3 is that the step S3. high-temperature crystallization annealing treatment is not performed, and the rest of the preparation process and parameters are consistent with those of Example 3.

[0061] Comparative Example 2

[0062] This comparative example provides a method for preparing a passivation layer of a solar cell, which differs from Example 3 in that step S1. depositing an ozone aluminum oxide layer is not performed, and the remaining preparation processes and parameters are consistent with those of Example 3.

[0063] Comparative Example 3

[0064] This comparative example provides a method for preparing a passivation layer of a solar cell. The difference between the comparative example and Example 3 is that the step S2. depositing a hydrous aluminum oxide layer is not performed, and the rest of the preparation process and parameters are consistent with those of Example 3.

[0065] Comparative Example 3

[0066] This comparative example provides a method for preparing a passivation layer of a solar cell, which differs from Example 3 in that step S4. forming a high-temperature silicon oxide layer is not performed, and the remaining preparation processes and parameters are consistent with those of Example 3.

[0067] Performance Testing

[0068] The electrical performance of the passivation layer structures prepared in Examples 1-4 and Comparative Examples 1-4 was tested. The results are shown in Table 1.

[0069] Table 1 Performance test results of examples and comparative examples

[0070]

[0071] Performance test data conclusion analysis:

[0072] The aforementioned performance test data demonstrates that the aluminum oxide film structure formed in this application significantly reduces UV attenuation losses in cells and modules. Under UV60kWh irradiation, the cell attenuation ratio does not exceed 0.7%, and the module attenuation ratio does not exceed 1.15%, significantly outperforming traditional water-based processes (module UV attenuation ≥ 2%) and ensuring the module's continued power generation capacity. (UV60 is a material weathering resistance test standard, and kWh is a unit of energy. When used together, the two typically represent the total UV energy irradiated during the test. In the photovoltaic industry, the UV60 standard combined with the kWh indicator can quantitatively assess a module's resistance to UV aging attenuation.)

[0073] Effects of Examples 1-4:

[0074] Anti-UV attenuation: The ozone / water composite alumina layer reduces the Si-H bond ratio, and Si-O bonds replace unstable Si-H bonds, significantly reducing the risk of UV damage;

[0075] Density of passivation layer: High temperature crystallization annealing can increase the density of aluminum oxide from 3.0g / cm 3 Increased to 3.35g / cm 3 (close to the theoretical value of γ-Al2O3 3.43g / cm 3 ), reducing pores and hydrogen diffusion channels;

[0076] Function of silicon oxide layer: The SiO2 layer fixes hydrogen atoms through physical blocking and chemical adsorption, thereby suppressing interface defects.

[0077] Compared to Examples 1-3, Example 4, with its annealing and crystallization temperature and silicon oxide formation temperature of 550°C, produced a passivation layer with poor performance. This is because the low crystallization annealing temperature reduced the density of aluminum oxide and reduced the free hydrogen release. The low temperature also reduced the thickness of silicon oxide, weakening its ability to hinder hydrogen diffusion. This overall Si-H bond increase resulted in a decrease in UV attenuation resistance.

[0078] Defects of the comparative example:

[0079] Comparative Example 1 does not perform high-temperature crystallization annealing treatment, resulting in high porosity of the aluminum oxide film, weakened ability to hinder hydrogen diffusion, increased Si-H bonds, and decreased UV attenuation resistance;

[0080] In Comparative Example 2 (water process), the ozone aluminum oxide layer deposition process was not performed, resulting in a large number of Si-H bonds on the interface, and the anti-UV attenuation ability was reduced;

[0081] Comparative Example 3 (ozone process) did not perform the hydrous aluminum oxide layer deposition process, resulting in a decrease in the overall H passivation ability, a significant decrease in efficiency, and a decrease in the power generation of the module;

[0082] Comparative Example 4, no high-temperature silicon oxide layer is formed, resulting in no silicon oxide layer, which cannot effectively hinder the diffusion of hydrogen, increases Si-H bonds, and reduces the ability to resist UV attenuation;.

[0083] Therefore, it is proved that the high-density battery passivation layer structure formed by the composite process of ozone aluminum oxide + hydrated aluminum oxide + high-temperature crystallization annealing + high-temperature silicon oxide can greatly reduce the interface silicon-hydrogen bond, reduce the ability of silicon-hydrogen bonds to be destroyed under ultraviolet light, and reduce H + Under the influence of the passivation layer, the anti-ultraviolet attenuation ability of cells and components is enhanced; significantly superior to traditional water processes and ozone processes, it can maintain more stable power generation efficiency in ultraviolet environments, extend service life, and reduce the cost of photovoltaic power generation.

[0084] Therefore, the high-density battery passivation layer structure formed by the composite process of ozone aluminum oxide + hydrated aluminum oxide + high-temperature crystallization annealing + high-temperature silicon oxide in this application can greatly reduce the interface silicon-hydrogen bond, reduce the ability of silicon-hydrogen bonds to be destroyed under ultraviolet light, and reduce H + The effect of the passivation layer can enhance the anti-ultraviolet attenuation ability of batteries and components, and has good application prospects and commercial value.

[0085] The present invention is further described above with the aid of specific embodiments. However, it should be understood that the specific description herein should not be construed as limiting the essence and scope of the present invention. Various modifications made to the above embodiments by ordinary technicians in this field after reading this specification are all within the scope of protection of the present invention.

Claims

1. A process for preparing a passivation layer of a solar cell, characterized in that: The following steps are involved: S1. Deposition of an ozone aluminum oxide layer: An ozone aluminum oxide layer is deposited on the surface of a silicon substrate by alternating the flow of O3 and TMA through an ALD process; S2. Deposition of a hydrous aluminum oxide layer: On the surface of the ozone aluminum oxide layer, a hydrous aluminum oxide layer is deposited by alternately introducing H2O and TMA through an ALD process; S3 high temperature crystallization annealing: In an inert gas environment, the silicon substrate formed of a water aluminum oxide layer is subjected to high temperature crystallization annealing; S4. Forming a high-temperature silicon oxide layer: performing oxidation treatment on the annealed silicon substrate in an oxygen-containing gas environment to form a high-temperature silicon oxide layer.

2. The process for preparing a solar cell passivation layer according to claim 1, wherein: The thickness of the ozone aluminum oxide layer is 2-4 nm, the thickness of the hydrated aluminum oxide layer is 3-7 nm, and the thickness of the high-temperature silicon oxide layer is 1-3 nm.

3. The process for preparing a solar cell passivation layer according to claim 1, wherein: The deposition temperature of the ozone aluminum oxide layer is 200-300°C, the deposition temperature of the hydrous aluminum oxide layer is 200-300°C, and the high-temperature crystallization annealing and oxidation layer temperature is 600-800°C.

4. The process for preparing a solar cell passivation layer according to claim 1, wherein: The process parameters of S1 are: The O3 pulse time is 5-15 seconds, the process flow rate is 15-35 sccm, and the number of cycles is 5-15 times; The TMA pulse time is 5-15 seconds, the process flow rate is 15-35 sccm, and the number of cycles is 5-15 times.

5. The process for preparing a solar cell passivation layer according to claim 1, wherein: The process parameters of S2 are: The H2O pulse time is 5-15 seconds, the process flow rate is 15-35 sccm, and the number of cycles is 25-35 times; The TMA pulse time is 5-15 seconds, the process flow rate is 15-35 sccm, and the number of cycles is 25-35 times.

6. The process for preparing a solar cell passivation layer according to claim 1, wherein: In S3, the inert gas is N2 or Ar, the process time is 10-30 minutes, and the gas flow rate is 5-15 slm.

7. The process for preparing a solar cell passivation layer according to claim 1, wherein: In the step S4, the process time is 10-30 min, the oxygen-containing gas is O2 or O3, and the gas flow rate is 5-15 slm.

8. A battery passivation layer structure, characterized in that: The invention is prepared by the preparation process according to any one of claims 1 to 7, and comprises an ozone aluminum oxide layer, a hydrated aluminum oxide layer and a high-temperature silicon oxide layer stacked in sequence.

9. A solar cell, characterized in that: The battery passivation layer structure according to claim 8 is included.

10. The solar cell according to claim 9, wherein: The solar cell is a TOPCon cell or a BC cell.

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