Color conversion substrate and display device

Abstract

The invention discloses a color conversion substrate and a display device. The color conversion substrate includes: an upper substrate including a first opening region, a second opening region adjacent to the first opening region, and a third opening region adjacent to the second opening region; a first color filter disposed on the upper substrate and having a first opening defining a second opening region; a second color filter disposed on the first color filter and having a second opening defining a third opening area; and a third color filter disposed on the second color filter and having a third opening defining a first opening area. The first color filter does not overlap with the light blocking region surrounding the third opening region.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to a color conversion substrate and a display device including the same. Background Art

[0002] Various patterns can be formed in display devices. These patterns can be formed using photolithography. Specifically, the photolithography process includes depositing a film; coating the film with photoresist; exposing the photoresist using a mask; developing the exposed photoresist to form a photoresist pattern; and inspecting the alignment of the photoresist pattern. Summary of the Invention

[0003] Embodiments provide a color conversion substrate with improved display quality.

[0004] The embodiment provides a display device including a color conversion substrate.

[0005] According to an embodiment, a color conversion substrate may include: an upper substrate including a first opening region, a second opening region adjacent to the first opening region, and a third opening region adjacent to the second opening region; a first color filter disposed on the upper substrate and having a first opening defining the second opening region; a second color filter disposed on the first color filter and having a second opening defining the third opening region; and a third color filter disposed on the second color filter and having a third opening defining the first opening region. The first color filter may not overlap with a light blocking region surrounding the third opening region.

[0006] In an embodiment, the first color filter may overlap with a light blocking region surrounding the second opening region.

[0007] In an embodiment, the first color filter may overlap the first opening area and a light blocking area surrounding the first opening area.

[0008] In an embodiment, the second color filter may not overlap with the light blocking region surrounding the first opening region.

[0009] In an embodiment, the second color filter may overlap with a light blocking region surrounding the third opening region.

[0010] In an embodiment, the second color filter may overlap the second opening area and a light blocking area surrounding the second opening area.

[0011] In an embodiment, the third color filter may not overlap with the light blocking region surrounding the second opening region.

[0012] In an embodiment, the third color filter may overlap with the light blocking region surrounding the first opening region.

[0013] In an embodiment, the third color filter may overlap the third opening area and the light blocking area surrounding the third opening area.

[0014] In an embodiment, the first opening region, the second opening region, and the third opening region may be arranged side by side.

[0015] In an embodiment, the first color filter may be a blue color filter, the second color filter may be a red color filter, and the third color filter may be a green color filter.

[0016] In an embodiment, the color conversion substrate may further include a dam disposed on the upper substrate and overlapping the light blocking area surrounding the first and second opening areas and the light blocking area surrounding the third opening area.

[0017] In an embodiment, the color conversion substrate may further include: a first color conversion pattern disposed on the first color filter, the first color conversion pattern being accommodated by the dam and including first quantum dots; a second color conversion pattern disposed on the second color filter, the second color conversion pattern being accommodated by the dam and including second quantum dots; and a third color conversion pattern disposed on the third color filter, the third color conversion pattern being accommodated by the dam and including third quantum dots.

[0018] A display device according to an embodiment may include an emitting substrate and a color conversion substrate disposed on the emitting substrate. The emitting substrate may include: a lower substrate, a first pixel electrode disposed on the lower substrate, a second pixel electrode disposed on the lower substrate and adjacent to the first pixel electrode, and a third pixel electrode disposed on the lower substrate and adjacent to the second pixel electrode. The color conversion substrate may include: an upper substrate including a first opening region, a second opening region adjacent to the first opening region, and a third opening region adjacent to the second opening region; a first color filter disposed between the lower substrate and the upper substrate, the first color filter may have a first opening defining the second opening region; a second color filter disposed between the first color filter and the lower substrate, the second color filter may have a second opening defining the third opening region; and a third color filter disposed between the second color filter and the lower substrate, the third color filter may have a third opening defining the first opening region. The first color filter may not overlap with a light blocking region surrounding the third opening region.

[0019] In an embodiment, the first color filter may overlap with a light blocking region surrounding the second opening region.

[0020] In an embodiment, the first color filter may overlap the first opening area and a light blocking area surrounding the first opening area.

[0021] In an embodiment, the second color filter may not overlap with the light blocking region surrounding the first opening region.

[0022] In an embodiment, the first color filter may overlap the first pixel electrode, the second color filter may overlap the second pixel electrode, and the third color filter may overlap the third pixel electrode.

[0023] In an embodiment, the display device may further include an emission layer disposed on the first to third pixel electrodes and a common electrode disposed on the emission layer.

[0024] In one embodiment, the display device may further include an active pattern disposed on the lower substrate, a gate electrode disposed on the active pattern, and a connection electrode disposed on the gate electrode and electrically connected to the active pattern.

[0025] Therefore, a display device according to an embodiment of the present disclosure may include a color conversion substrate in which a color filter may be formed. Each of the multiple color filters may define only one adjacent opening area and may not define another opening area. For example, a first color filter may define a second opening area and may not define a third opening area. A second color filter may define a third opening area and may not define the first opening area. A third color filter may define the first opening area and may not define the second opening area. Therefore, a margin for the width of the dam can be ensured, and the spacing between the first opening area and the third opening area can be reduced. Therefore, the resolution of a display device including a color conversion substrate can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The accompanying drawings are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification and, together with the description, illustrate embodiments of the disclosure.

[0027] Figure 1 is a perspective view showing a display device according to an embodiment of the present disclosure;

[0028] Figure 2 It is shown that the Figure 1 A plan view of an emitting substrate in a display device;

[0029] Figure 3 is included in Figure 2 A schematic diagram of an equivalent circuit of a pixel in an emitting substrate;

[0030] Figure 4 It shows Figure 2 A schematic cross-sectional view of an emitting substrate;

[0031] Figure 5 It is shown that the Figure 1 A schematic cross-sectional view of a color conversion substrate in a display device;

[0032] Figure 6 It shows Figure 1 A schematic cross-sectional view of a display device;

[0033] Figures 7 to 20 It shows the manufacturing Figure 5 A schematic diagram of a method for converting a color of a substrate; and

[0034] Figure 21 is a schematic cross-sectional view illustrating a color conversion substrate included in a display device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0035] In the following description, for the purpose of explanation, many specific details are set forth in order to provide a thorough understanding of the various embodiments or implementations of the present disclosure. As used herein, "embodiment" and "implementation" are interchangeable words that are non-limiting examples of the apparatus or method disclosed herein. However, it is apparent that the various embodiments can be practiced without these specific details or with one or more equivalent arrangements. Here, the various embodiments are not necessarily exclusive and do not limit the present disclosure. For example, the specific shapes, configurations, and characteristics of an embodiment can be used or implemented in another embodiment.

[0036] Unless otherwise specified, the embodiments shown will be understood to provide features of the present disclosure. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects of the various embodiments (hereinafter individually or collectively referred to as "elements") can be combined, separated, interchanged and / or rearranged in other ways without departing from the concept of the present invention.

[0037] The use of cross hatching and / or shading is generally provided in the accompanying drawings to make the boundaries between adjacent elements clear. Thus, unless otherwise specified, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for a particular material, material properties, size, ratio, commonality between the elements shown and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the accompanying drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. When the embodiment can be implemented differently, the specific process sequence can be performed differently from the described order. For example, two processes described in succession can be performed substantially simultaneously, or in an order opposite to the described order. In addition, the same reference numerals and / or reference symbols represent the same elements.

[0038] When an element or layer is referred to as being "on" another element or layer, "connected to" or "coupled to" another element or layer, the element or layer may be directly on, directly connected to or directly coupled to the other element or layer, or there may be intervening elements or layers. However, when an element or layer is referred to as being "directly on" another element or layer, "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. For this purpose, the term "connected" may refer to a physical connection, an electrical connection and / or a fluid connection with or without an intervening element. In addition, the first direction D1, the second direction D2 and the third direction D3 are not limited to the three axes of a rectangular coordinate system (such as the x, y and z axes) and may be interpreted in a broader sense. For example, the first direction D1, the second direction D2 and the third direction D3 may be perpendicular to each other, or may be different directions that are not perpendicular to each other.

[0039] For the purposes of this disclosure, “at least one of A and B” may be interpreted as only A, only B, or any combination of A and B. Furthermore, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0040] Although the terms "first," "second," etc., may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, the first element discussed below may be referred to as the second element without departing from the teachings of the present disclosure.

[0041] For descriptive purposes, spatially relative terms such as "under," "beneath," "beneath," "down," "over," "up," "above (or across)," "higher," and "side" (e.g., as in "sidewall") may be used herein and thereby describe the relationship of one element to another element (or elements) as shown in the accompanying drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the accompanying drawings. For example, if the device in the drawings is turned over, an element described as "under" or "beneath" other elements or features would subsequently be oriented "over" the other elements or features. Thus, the term "under" can encompass both the above and below orientations. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or in other orientations), and therefore, the spatially relative terms used herein are interpreted accordingly.

[0042] The terms used herein are for the purpose of describing specific embodiments and are not intended to be limiting. As used herein, the singular forms "one", "one / one / kind" and "the (or described)" are also intended to include plural forms, unless the context clearly indicates otherwise. In addition, when used in this manual, the terms "comprise", "include", "contain" and / or "have" illustrate the presence of stated features, integral bodies, steps, operations, elements, components and / or their groups, but do not exclude the presence or addition of one or more other features, integral bodies, steps, operations, elements, components and / or their groups. It should also be noted that, as used herein, the terms "substantially", "approximately" and other similar terms are used as approximate terms, and are not used as degree terms, and therefore, are used to illustrate the inherent deviations in measured values, calculated values and / or provided values that will be recognized by those of ordinary skill in the art.

[0043] Various embodiments are described herein with reference to cross-sectional views and / or exploded views that are schematic diagrams of embodiments and / or intermediate structures. As such, variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are anticipated. Therefore, the embodiments disclosed herein should not necessarily be construed as limited to the particular shapes shown for the regions, but rather include deviations in shape due to, for example, manufacturing. In this manner, the regions shown in the accompanying drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and as such, are not necessarily intended to be limiting.

[0044] As is customary in the art, some embodiments are described and illustrated in the accompanying drawings according to functional blocks, units and / or modules. It will be appreciated by those skilled in the art that these blocks, units and / or modules are physically implemented by electronic (or optical) circuits (such as, logic circuits, discrete components, microprocessors, hard-wired circuits, storage elements and wiring connections, etc.), which can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. Where blocks, units and / or modules are implemented by microprocessors or other similar hardware, they can be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and can be optionally driven by firmware and / or software. It is also conceivable that each block, unit and / or module can be implemented by dedicated hardware, or implemented as a combination of dedicated hardware that performs some functions and a processor that performs other functions (e.g., one or more programmed microprocessors and associated circuits). In addition, each block, unit and / or module of some embodiments can be physically separated into two or more interactive and discrete blocks, units and / or modules without departing from the scope of the present invention. Furthermore, the blocks, units and / or modules of some embodiments may be physically combined into more complex blocks, units and / or modules without departing from the scope of the inventive concept.

[0045] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will also be understood that, unless expressly defined as such herein, terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present disclosure, and should not be interpreted in an idealized or overly formal sense.

[0046] Exemplary, non-limiting embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.

[0047] Figure 1 is a perspective view illustrating a display device according to an embodiment of the present disclosure.

[0048] Reference Figure 1 , a display device DD according to an embodiment of the present disclosure may include an emission substrate 1000 and a color conversion substrate 2000 .

[0049] The emission substrate 1000 may generate light and may emit light. In an embodiment, the emission substrate 1000 may include at least one pixel circuit and at least one light emitting diode. The pixel circuit may generate a driving current, and the light emitting diode may emit light corresponding to the driving current.

[0050] The color conversion substrate 2000 may be disposed on the emission substrate 1000. The color conversion substrate 2000 may convert, transmit, block, and / or absorb the color of light emitted from the emission substrate 1000. Therefore, the color conversion substrate 2000 may improve color reproducibility of the display device DD.

[0051] A photolithography process may be used while manufacturing various patterns included in the color conversion substrate 2000. For example, the photolithography process may include: coating a photoresist; exposing the photoresist using a mask; developing the exposed photoresist to form a photoresist pattern; and inspecting the alignment of the photoresist pattern.

[0052] Figure 2 It is shown that the Figure 1 A plan view of an emitting substrate in a display device. Figure 3 is included in Figure 2 Schematic diagram of the equivalent circuit of a pixel in the emitting substrate. Figure 4 It shows Figure 2 Schematic cross-sectional view of an emitting substrate.

[0053] Reference Figure 2, the emission substrate 1000 may be divided into a display area DA and a non-display area NDA. An image may be displayed in the display area DA, and the non-display area NDA may be positioned to surround at least a portion of the display area DA.

[0054] The pixel circuit PC may be disposed in the display area DA. The pixel circuit PC may be electrically connected to a gate line GL extending in a first direction D1 and a data line DL extending in a second direction D2 intersecting the first direction D1. The pixel circuit PC may generate a driving current.

[0055] The gate driver GDV and the data driver DDV may be disposed in the non-display area NDA.

[0056] The gate driver GDV may generate a gate signal, which may be transmitted to the pixel circuit PC through the gate line GL.

[0057] The data driver DDV may generate a data voltage, and the data voltage may be transmitted to the pixel circuit PC through the data line DL.

[0058] Reference Figure 3 The pixel circuit PC may include a first transistor T1, a second transistor T2, a third transistor T3, and a storage capacitor CST. The pixel circuit PC may be electrically connected to a light emitting diode LED. The pixel circuit PC may generate a driving current, and the light emitting diode LED may emit light in response to the driving current.

[0059] The first transistor T1 may include a gate terminal, a first terminal, and a second terminal. The gate terminal may be electrically connected to the second transistor T2. The first terminal may be supplied with a first voltage ELVDD. The second terminal may be electrically connected to the light emitting diode LED. The first transistor T1 may generate a driving current.

[0060] The second transistor T2 may include a gate terminal, a first terminal, and a second terminal. The gate terminal may receive a first gate signal SC. The first terminal may be provided with a data voltage DATA. The second terminal may be electrically connected to the first transistor T1. The second transistor T2 may transmit the data voltage DATA in response to the first gate signal SC.

[0061] The third transistor T3 may include a gate terminal, a first terminal, and a second terminal. The gate terminal may receive a second gate signal SS. The first terminal may be provided with an initialization voltage VINT. The second terminal may be electrically connected to the light emitting diode LED. The third transistor T3 may transmit the initialization voltage VINT in response to the second gate signal SS.

[0062] The storage capacitor CST may include a first terminal and a second terminal. The first terminal may be electrically connected to the gate terminal of the first transistor T1 and the second terminal may be electrically connected to the second terminal of the first transistor T1.

[0063] The light emitting diode LED may include a first terminal and a second terminal. The first terminal may be electrically connected to the first transistor T1. The second terminal may be supplied with a second voltage ELVSS.

[0064] Reference Figure 4 The emission substrate 1000 may include a lower substrate BSUB, a lower metal pattern BML, a buffer layer BFR, an active pattern ACT, a gate insulating layer GI, a gate electrode GAT, an interlayer insulating layer ILD, a connecting electrode CE, a passivation layer PVX, a via insulating layer VIA, a first pixel electrode ADE1, a second pixel electrode ADE2, a third pixel electrode ADE3, a pixel defining layer PDL, an emission layer EL, a common electrode CTE, a first inorganic layer IL1, an organic layer OL and a second inorganic layer IL2.

[0065] The lower metal pattern BML, the active pattern ACT, the gate electrode GAT, and the connection electrode CE may form a transistor TFT.

[0066] The lower metal pattern BML, the buffer layer BFR, the active pattern ACT, the gate insulating layer GI, the gate electrode GAT, the interlayer insulating layer ILD, the connection electrode CE, the passivation layer PVX, and the via insulating layer VIA may be defined as a pixel circuit layer PCL.

[0067] The lower substrate BSUB may include a transparent material or an opaque material. In embodiments, examples of materials that can be used as the lower substrate BSUB include glass, quartz, and plastic. These materials can be used alone or in combination. The lower substrate BSUB may be composed of a single layer or a combination of multiple layers.

[0068] The lower metal pattern BML may be disposed on the lower substrate BSUB. In embodiments, the lower metal pattern BML may be formed of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. Examples of materials that may be used as the lower metal pattern BML may include silver (Ag), an alloy containing silver, molybdenum (Mo), an alloy containing molybdenum, aluminum (Al), an alloy containing aluminum, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), nickel (Ni), chromium (Cr), chromium nitride (CrN), titanium (Ti), tantalum (Ta), platinum (Pt), scandium (Sc), indium tin oxide (ITO), and indium zinc oxide (IZO). These materials may be used alone or in combination with one another. The lower metal pattern BML may be composed of a single layer or a combination of multiple layers.

[0069] The buffer layer BFR may be disposed on the lower substrate BSUB and may cover the lower metal pattern BML. In embodiments, the buffer layer BFR may be formed of an inorganic insulating material. Examples of materials that may be used as the inorganic insulating material include silicon oxide, silicon nitride, silicon oxynitride, and combinations thereof. These materials may be used alone or in combination. The buffer layer BFR may prevent metal atoms, atoms, or impurities from diffusing from the lower substrate BSUB to the active pattern ACT. The buffer layer BFR may control the heat supply rate during the crystallization process to form the active pattern ACT.

[0070] The active pattern ACT may be provided on the buffer layer BFR. In an embodiment, the active pattern ACT may be formed of a silicon semiconductor material or an oxide semiconductor material. Examples of silicon semiconductor materials that may be used as the active pattern ACT may include amorphous silicon and polycrystalline silicon. Examples of oxide semiconductor materials that may be used as the active pattern ACT may include oxides of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn), such as InGaZnO (IGZO), InSnZnO (ITZO), and the like. These materials may be used alone or in combination with one another.

[0071] The gate insulating layer GI may be disposed on the active pattern ACT. In an embodiment, the gate insulating layer GI may be formed of an insulating material. Examples of insulating materials that may be used as the gate insulating layer GI may include silicon oxide, silicon nitride, and silicon oxynitride. These insulating materials may be used alone or in combination with one another.

[0072] The gate electrode GAT may be provided on the gate insulating layer GI. In an embodiment, the gate electrode GAT may be formed of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. Examples of materials that may be used as the gate electrode GAT may include silver (Ag), an alloy containing silver, molybdenum (Mo), an alloy containing molybdenum, aluminum (Al), an alloy containing aluminum, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), nickel (Ni), chromium (Cr), chromium nitride (CrN), titanium (Ti), tantalum (Ta), platinum (Pt), scandium (Sc), indium tin oxide (ITO), indium zinc oxide (IZO), or the like. These materials may be used alone or in combination with one another.

[0073] In an embodiment, the gate electrode GAT may be composed of a single layer or a combination of multiple layers. For example, the gate electrode GAT may include a titanium layer and a copper layer disposed on the titanium layer. In other words, the gate electrode GAT may have a Ti / Cu structure.

[0074] An interlayer insulating layer ILD may be disposed on the buffer layer BFR and the gate insulating layer GI. The interlayer insulating layer ILD may cover the gate electrode GAT. In an embodiment, the interlayer insulating layer ILD may be formed of an insulating material. Examples of insulating materials that may be used as the interlayer insulating layer ILD may include silicon oxide, silicon nitride, and silicon oxynitride. These insulating materials may be used alone or in combination.

[0075] The connection electrode CE may be provided on the interlayer insulating layer ILD. The connection electrode CE may contact the active pattern ACT. In an embodiment, the connection electrode CE may be formed of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. Examples of materials that can be used as the connection electrode CE may include silver (Ag), an alloy containing silver, molybdenum (Mo), an alloy containing molybdenum, aluminum (Al), an alloy containing aluminum, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), nickel (Ni), chromium (Cr), chromium nitride (CrN), titanium (Ti), tantalum (Ta), platinum (Pt), scandium (Sc), indium tin oxide (ITO), indium zinc oxide (IZO), or the like. These materials may be used alone or in combination with one another.

[0076] In an embodiment, the connection electrode CE may be composed of a single layer or a combination of multiple layers. For example, the connection electrode CE may include a titanium layer, a copper layer disposed on the titanium layer, and an indium tin oxide layer disposed on the copper layer. In other words, the connection electrode CE may have a Ti / Cu / ITO structure.

[0077] A passivation layer PVX may be disposed on the interlayer insulating layer ILD and may cover the connection electrode CE.

[0078] In an embodiment, the passivation layer PVX may be formed of an inorganic insulating material. Examples of inorganic insulating materials that may be used as the passivation layer PVX may include silicon oxide, silicon nitride, and silicon oxynitride. These inorganic insulating materials may be used alone or in combination with each other.

[0079] In an embodiment, the passivation layer PVX may be omitted.

[0080] The via insulating layer VIA may be disposed on the passivation layer PVX. In an embodiment, the via insulating layer VIA may be formed of an organic material. Examples of organic materials that may be used as the via insulating layer VIA may include photoresist, polyacrylic resin, polyimide resin, and acrylic resin. These organic materials may be used alone or in combination with one another.

[0081] In an embodiment, the passivation layer PVX may be omitted. The via insulating layer VIA may include an organic material and an inorganic material. Examples of materials that can be used as the via insulating layer VIA may include photoresist, polyacrylic resin, polyimide resin, acrylic resin, silicon oxide, silicon nitride, and silicon oxynitride. These materials may be used alone or in combination with each other.

[0082] The first pixel electrode ADE1, the second pixel electrode ADE2, and the third pixel electrode ADE3 may be disposed on the via insulating layer VIA. The first pixel electrode ADE1, the second pixel electrode ADE2, and the third pixel electrode ADE3 may be electrically connected to corresponding transistors, respectively.

[0083] In an embodiment, the first pixel electrode ADE1, the second pixel electrode ADE2, and the third pixel electrode ADE3 may be arranged side by side in the first direction D1. In other words, the second pixel electrode ADE2 may be adjacent to the first pixel electrode ADE1 in the first direction D1, the third pixel electrode ADE3 may be adjacent to the second pixel electrode ADE2 in the first direction D1, and the first pixel electrode ADE1 may be adjacent to the third pixel electrode ADE3 in the first direction D1.

[0084] In an embodiment, the first pixel electrode ADE1, the second pixel electrode ADE2, and the third pixel electrode ADE3 may be formed of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. Examples of materials that can be used for the first pixel electrode ADE1, the second pixel electrode ADE2, and the third pixel electrode ADE3 may include silver (Ag), an alloy containing silver, molybdenum (Mo), an alloy containing molybdenum, aluminum (Al), an alloy containing aluminum, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), nickel (Ni), chromium (Cr), chromium nitride (CrN), titanium (Ti), tantalum (Ta), platinum (Pt), scandium (Sc), indium tin oxide (ITO), and indium zinc oxide (IZO). These materials may be used alone or in combination with each other.

[0085] In an embodiment, each of the first pixel electrode ADE1, the second pixel electrode ADE2, and the third pixel electrode ADE3 may be configured as a single layer or a multilayer structure including multiple layers combined with each other. For example, each of the first pixel electrode ADE1, the second pixel electrode ADE2, and the third pixel electrode ADE3 may have an ITO / Ag / ITO structure.

[0086] The pixel defining layer (PDL) may be disposed on the via insulating layer (VIA). Openings exposing the first pixel electrode ADE1, the second pixel electrode ADE2, and the third pixel electrode ADE3 may be formed in the pixel defining layer (PDL). In embodiments, the pixel defining layer (PDL) may be formed of an organic material. Examples of organic materials that may be used for the pixel defining layer (PDL) include photoresist, polyacrylic resin, polyimide resin, and acrylic resin. These organic materials may be used alone or in combination.

[0087] The emission layer EL may be provided on the first pixel electrode ADE1, the second pixel electrode ADE2, the third pixel electrode ADE3 and the pixel defining layer PDL. In an embodiment, the emission layer EL may be formed on a substrate including Figure 2 The entire area of the display area DA and the non-display area NDA shown in FIG. For example, the emission layer EL may have a multi-layer structure in which multiple layers may be stacked on each other. The emission layer EL may emit light of different colors. In an embodiment, the emission layer EL may be provided in the opening.

[0088] The common electrode CTE may be disposed on the emission layer EL. In an embodiment, the common electrode CTE may be formed of metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, or the like.

[0089] The first inorganic layer IL1 may be disposed on the common electrode CTE. In an embodiment, the first inorganic layer IL1 may be formed of an inorganic material. Examples of inorganic materials that may be used as the first inorganic layer IL1 may include silicon oxide, silicon nitride, and silicon oxynitride. These inorganic materials may be used alone or in combination with one another.

[0090] The organic layer OL may be disposed on the first inorganic layer IL1. In an embodiment, the organic layer OL may be formed of an organic material. Examples of organic materials that may be used for the organic layer OL may include photoresist, polyacrylic resin, polyimide resin, and acrylic resin. These organic materials may be used alone or in combination.

[0091] The second inorganic layer IL2 may be disposed on the organic layer OL. In an embodiment, the second inorganic layer IL2 may be formed of an inorganic material. Examples of inorganic materials that may be used as the second inorganic layer IL2 may include silicon oxide, silicon nitride, and silicon oxynitride. These inorganic materials may be used alone or in combination.

[0092] Figure 5 It is shown that the Figure 1 Schematic cross-sectional view of a color conversion substrate in a display device.

[0093] Reference Figure 5Color conversion substrate 2000 may include an upper substrate TSUB, first color filters BCF, second color filters RCF, third color filters GCF, a dam BK, a protection layer PL, first color conversion patterns CT1, second color conversion patterns CT2, third color conversion patterns CT3, a capping layer CAP, and a filler FM.

[0094] The upper substrate TSUB may include a transparent material or an opaque material. In embodiments, examples of materials that can be used as the upper substrate TSUB include glass, quartz, and plastic. These materials can be used alone or in combination. The upper substrate TSUB may be composed of a single layer or a combination of multiple layers.

[0095] In an embodiment, the upper substrate TSUB may include a first opening area OPA1, a second opening area OPA2, a third opening area OPA3, and a light blocking area LBA.

[0096] The first open area OPA1, the second open area OPA2, and the third open area OPA3 may be arranged side by side in the first direction D1. For example, the second open area OPA2 may be adjacent to the first open area OPA1 in the first direction D1, the third open area OPA3 may be adjacent to the second open area OPA2 in the first direction D1, and the first open area OPA1 may be adjacent to the third open area OPA3 in the first direction D1.

[0097] The light blocking area LBA can be defined in an area other than the first opening area OPA1, the second opening area OPA2 and the third opening area OPA3 (or outside the first opening area OPA1, the second opening area OPA2 and the third opening area OPA3), and can surround the first opening area OPA1, the second opening area OPA2 and the third opening area OPA3 in a plan view.

[0098] The first color filter BCF may be disposed on the upper substrate TSUB. In an embodiment, the first color filter BCF may be a blue color filter and may transmit only light having a wavelength corresponding to blue. For example, the first color filter BCF may include a photoresist, an acrylic resin, an epoxy resin, a polyimide resin, or a combination thereof, and may be patterned by the aforementioned exposure process.

[0099] The second color filter RCF may be disposed on the first color filter BCF. In an embodiment, the second color filter RCF may be a red color filter and may transmit only light having a wavelength corresponding to red. For example, the second color filter RCF may include a photoresist, an acrylic resin, an epoxy resin, a polyimide resin, or a combination thereof, and may be patterned by the above-described exposure process.

[0100] The third color filter GCF may be disposed on the second color filter RCF. In an embodiment, the third color filter GCF may be a green color filter and may transmit only light having a wavelength corresponding to green. For example, the third color filter GCF may include a photoresist, an acrylic resin, an epoxy resin, a polyimide resin, or a combination thereof, and may be patterned by the above-described exposure process.

[0101] The dam BK may be provided on the upper substrate TSUB and may overlap with the light blocking area LBA. In an embodiment, the dam BK may be provided on the third color filter GCF and may overlap with at least two color filters among the first color filter BCF, the second color filter RCF, and the third color filter GCF. In an embodiment, the dam BK may be provided on the second color filter RCF and may overlap with at least one color filter among the first color filter BCF and the second color filter RCF.

[0102] The dam BK may include a light blocking material that blocks light or absorbs light. For example, the dam BK may include a black pigment, a black dye, chromium (Cr), chromium oxide (CrO x ), chromium nitride (CrN x ), graphite, combinations thereof, etc.

[0103] The protective layer PL may be disposed on the dam BK and may completely cover the first color filter BCF, the second color filter RCF, and the third color filter GCF. In an embodiment, the protective layer PL may include an inorganic material. For example, the protective layer PL may include silicon oxide (SiO2), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium dioxide (TiO2), tantalum oxide (Ta2O5), hafnium dioxide (HfO2), zinc dioxide (ZnO2), or a combination thereof.

[0104] The first color conversion pattern CT1 may be disposed on the first color filter BCF. In an embodiment, the first color conversion pattern CT1 may be accommodated by the dam BK.

[0105] In an embodiment, the first color conversion pattern CT1 may include first monomers MN1, first quantum dots QD1, and first scattering particles SP1.

[0106] The first quantum dots QD1 and the first scattering particles SP1 may be dispersed in the first monomer MN1. In an embodiment, the first monomer MN1 may include an epoxy-based monomer, an ester-based monomer, or the like.

[0107] The first quantum dot QD1 may convert the color of incident light into blue. For example, the first quantum dot QD1 may be a quantum dot selected from the group consisting of a II-VI compound, a IV-VI compound, a group IV element, a group IV compound, and a combination thereof. However, the first color conversion pattern CT1 may not include the first quantum dot QD1.

[0108] The first scattering particles SP1 may scatter light. In an embodiment, the first scattering particles SP1 may include titanium dioxide (TiO2) particles, zinc oxide (ZnO) particles, aluminum oxide (Al2O3) particles, silicon oxide (SiO2) particles (such as hollow silica particles), combinations thereof, and the like.

[0109] The second color conversion pattern CT2 may be disposed on the second color filter RCF. In an embodiment, the second color conversion pattern CT2 may be accommodated by the dam BK.

[0110] In an embodiment, the second color conversion pattern CT2 may include second monomers MN2 , second quantum dots QD2 , and second scattering particles SP2 .

[0111] The second quantum dots QD2 and the second scattering particles SP2 may be dispersed in the second monomer MN2. In an embodiment, the second monomer MN2 may include an epoxy-based monomer, an ester-based monomer, or the like.

[0112] The second quantum dot QD2 may convert the color of the incident light into red. For example, the second quantum dot QD2 may be a quantum dot and may be selected from the group consisting of II-VI compounds, IV-VI compounds, IV elements, IV compounds, and combinations thereof.

[0113] The second scattering particles SP2 may scatter light. In an embodiment, the second scattering particles SP2 may include titanium dioxide (TiO2) particles, zinc oxide (ZnO) particles, aluminum oxide (Al2O3) particles, silicon oxide (SiO2) particles (such as hollow silica particles), combinations thereof, and the like.

[0114] The third color conversion pattern CT3 may be disposed on the third color filter GCF. In an embodiment, the third color conversion pattern CT3 may be accommodated by the dam BK.

[0115] In an embodiment, the third color conversion pattern CT3 may include third monomers MN3, third quantum dots QD3, and third scattering particles SP3.

[0116] The third quantum dots QD3 and the third scattering particles SP3 may be dispersed in the third monomer MN3. In an embodiment, the third monomer MN3 may include an epoxy-based monomer, an ester-based monomer, and the like.

[0117] The third quantum dot QD3 may convert the color of the incident light into green. For example, the third quantum dot QD3 may be a quantum dot and may be selected from the group consisting of II-VI compounds, IV-VI compounds, IV elements, IV compounds, and combinations thereof.

[0118] The third scattering particles SP3 may scatter light. In an embodiment, the third scattering particles SP3 may include titanium dioxide (TiO2) particles, zinc oxide (ZnO) particles, aluminum oxide (Al2O3) particles, silicon oxide (SiO2) particles (such as hollow silica particles), combinations thereof, and the like.

[0119] The cover layer CAP may be disposed on the first, second, and third color conversion patterns CT1, CT2, and CT3. The cover layer CAP may completely cover the first, second, and third color conversion patterns CT1, CT2, and CT3.

[0120] The filler FM may be disposed on the cover layer CAP. In an embodiment, the filler FM may include an organic material having a relatively high refractive index. For example, the filler FM may include polyurethane resin, epoxy resin, acrylic resin, a combination thereof, or the like.

[0121] Figure 6 It shows Figure 1 Schematic cross-sectional view of a display device.

[0122] Reference Figure 6 , the display device DD may include a reference Figure 4 The emission substrate 1000 described and reference Figure 5 The color conversion substrate 2000 is described. In an embodiment, the emission substrate 1000 and the color conversion substrate 2000 may be arranged to be aligned with each other. For example, the first color filter BCF may overlap with the first pixel electrode ADE1, the second color filter RCF may overlap with the second pixel electrode ADE2, and the third color filter GCF may overlap with the third pixel electrode ADE3.

[0123] Figures 7 to 20 It shows the manufacturing Figure 5 Schematic diagram of the method of color conversion substrate.

[0124] Reference Figure 7 , a preliminary first color filter BCF' may be formed on the upper substrate TSUB. In an embodiment, a photoresist may be completely applied on the upper substrate TSUB. In the present disclosure, the photoresist may be described as a negative photoresist, but the present disclosure is not limited thereto.

[0125] Reference Figure 8 、 Figure 9 and Figure 10, a first color filter BCF may be formed on the upper substrate TSUB.

[0126] In detail, Figure 8 It can be shown that the preliminary first color filter BCF' (refer to Figure 7 ) of the first mask MK1. Figure 8 As shown in FIG, the first mask MK1 may include a first blocking part BLP1 that blocks light and a first opening part OPP1 that allows light to pass therethrough. The first blocking part BLP1 may correspond to the second opening area OPA2, the third opening area OPA3, and the light blocking area LBA surrounding the third opening area OPA3 of the upper substrate TSUB. The first opening part OPP1 may correspond to an area other than the first blocking part BLP1 (or outside the first blocking part BLP1).

[0127] like Figure 9 and Figure 10 As shown in FIG, a first color filter BCF patterned according to patterns of the first barrier part BLP1 and the first opening part OPP1 may be formed.

[0128] Since the first color filter BCF overlaps the first opening area OPA1, light emitted from the first opening area OPA1 may have a blue color.

[0129] The first color filter BCF may overlap the light blocking area LBA surrounding the second opening area OPA2 and may not be formed in the second opening area OPA2. Therefore, the first opening OP1 defining the second opening area OPA2 may be formed in the first color filter BCF.

[0130] The first color filter BCF may not overlap with the light blocking area LBA surrounding the third opening area OPA3. In other words, the first color filter BCF may not define the third opening area OPA3.

[0131] Reference Figure 11 , a preliminary second color filter RCF' may be formed on the first color filter BCF. In an embodiment, a photoresist may be applied completely on the first color filter BCF. In the present disclosure, the photoresist may be described as a negative photoresist, but the present disclosure is not limited thereto.

[0132] Reference Figure 12 、 Figure 13 and Figure 14 , a second color filter RCF may be formed on the first color filter BCF.

[0133] In detail, Figure 12 It can be shown that the preliminary second color filter RCF' (refer to Figure 11 ) of the second mask MK2. Figure 12As shown in FIG, the second mask MK2 may include a second blocking part BLP2 that blocks light and a second opening part OPP2 that allows light to pass therethrough. The second blocking part BLP2 may correspond to the third opening area OPA3, the first opening area OPA1, and the light blocking area LBA surrounding the first opening area OPA1 of the upper substrate TSUB. The second opening part OPP2 may correspond to an area other than the second blocking part BLP2.

[0134] like Figure 13 and Figure 14 As shown in , the second color filter RCF patterned according to the patterns of the second barrier part BLP2 and the second opening part OPP2 may be formed.

[0135] Since the second color filter RCF overlaps the second opening area OPA2, light emitted from the second opening area OPA2 may have a red color.

[0136] The second color filter RCF may overlap the light blocking area LBA surrounding the third opening area OPA3 and may not be formed in the third opening area OPA3. Therefore, the second opening OP2 defining the third opening area OPA3 may be formed in the second color filter RCF.

[0137] The second color filter RCF may not overlap with the light blocking area LBA surrounding the first opening area OPA1. In other words, the second color filter RCF may not define the first opening area OPA1.

[0138] Reference Figure 15 , a preliminary third color filter GCF' may be formed on the second color filter RCF. In an embodiment, a photoresist may be applied completely on the second color filter RCF. In the present disclosure, the photoresist may be described as a negative photoresist, but the present disclosure is not limited thereto.

[0139] Reference Figure 16 、 Figure 17 and Figure 18 , a third color filter GCF may be formed on the second color filter RCF.

[0140] In detail, Figure 16 It can be shown that the preliminary third color filter GCF' (refer to Figure 15 ) of the third mask MK3. Figure 16As shown in FIG, the third mask MK3 may include a third blocking part BLP3 that blocks light and a third opening part OPP3 that allows light to pass therethrough. The third blocking part BLP3 may correspond to the first opening area OPA1, the second opening area OPA2, and the light blocking area LBA surrounding the second opening area OPA2 of the upper substrate TSUB. The third opening part OPP3 may correspond to an area other than the third blocking part BLP3.

[0141] like Figure 17 and Figure 18 As shown in FIG, a third color filter GCF patterned according to patterns of the third barrier part BLP3 and the third opening part OPP3 may be formed.

[0142] Since the third color filter GCF overlaps the third opening area OPA3, light emitted from the third opening area OPA3 may have a green color.

[0143] The third color filter GCF may overlap the light blocking area LBA surrounding the first opening area OPA1 and may not be formed in the first opening area OPA1. Therefore, the third opening OP3 defining the first opening area OPA1 may be formed in the third color filter GCF.

[0144] The third color filter GCF may not overlap with the light blocking area LBA surrounding the second opening area OPA2. In other words, the third color filter GCF may not define the second opening area OPA2.

[0145] Reference Figure 19 The dam BK may be provided on the upper substrate TSUB and may overlap with the light blocking area LBA. In an embodiment, the dam BK may be provided on the third color filter GCF and may overlap with at least two color filters among the first color filter BCF, the second color filter RCF, and the third color filter GCF. In an embodiment, the dam BK may be provided on the second color filter RCF and may overlap with at least one color filter among the first color filter BCF and the second color filter RCF.

[0146] Reference Figure 20 , a protection layer PL, first, second, and third color conversion patterns CT1, CT2, and CT3, a capping layer CAP, and a filler FM may be sequentially formed on the dam BK.

[0147] According to the color conversion substrate 2000 according to an embodiment of the present disclosure, the color filter may define only one adjacent opening area and may not define another opening area. For example, the first color filter BCF may define the second opening area OPA2 and may not define the third opening area OPA3. The second color filter RCF may define the third opening area OPA3 and may not define the first opening area OPA1. The third color filter GCF may define the first opening area OPA1 and may not define the second opening area OPA2. Therefore, the width WBK of the dam BK in the first direction D1 (refer to Figure 5 ) margin, and the intervals between the first opening area OPA1, the second opening area OPA2, and the third opening area OPA3 can be reduced. Therefore, the display device DD (refer to FIG. 1 ) including the color conversion substrate 2000 can be improved. Figure 1 ) resolution.

[0148] Figure 21 is a schematic cross-sectional view illustrating a color conversion substrate included in a display device according to an embodiment of the present disclosure.

[0149] Figure 21 It is shown that the color conversion substrate 2100 included in the display device according to an embodiment of the present disclosure may include a first color filter BCF, a second color filter RCF, and a third color filter GCF.

[0150] The first color filter BCF may be disposed on the upper substrate TSUB, may overlap the first opening area OPA1, and may define a second opening area OPA2 and a third opening area OPA3. In other words, the first color filter BCF may define two adjacent opening areas.

[0151] The second color filter RCF may be disposed on the first color filter BCF, may overlap the second opening area OPA2, and may define a third opening area OPA3, and may not define the first opening area OPA1. In other words, the second color filter RCF may define only one adjacent opening area and may not define another opening area.

[0152] The third color filter GCF may be disposed on the second color filter RCF, may overlap with the third opening area OPA3, may define the first opening area OPA1, and may not define the second opening area OPA2. In other words, the third color filter GCF may define only one adjacent opening area and may not define another opening area.

[0153] According to the color conversion substrate 2100 according to an embodiment of the present disclosure, the color filter formed at the bottom may define two adjacent opening areas. For example, the first color filter BCF may define a second opening area OPA2 and a third opening area OPA3. Each of the multiple different color filters may define only one adjacent opening area and may not define another opening area. For example, the second color filter RCF may define a third opening area OPA3 and may not define the first opening area OPA1. The third color filter GCF may define the first opening area OPA1 and may not define the second opening area OPA2. Therefore, the width WBK of the dam BK in the first direction D1 (refer to Figure 5 ) margin, and the intervals between the first opening area OPA1, the second opening area OPA2, and the third opening area OPA3 can be reduced. Therefore, the display device DD (refer to FIG. 1 ) including the color conversion substrate 2100 can be improved. Figure 1 ) resolution.

[0154] Although specific embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this disclosure. Therefore, the present disclosure is not limited to these embodiments, but is limited to the broader scope of the appended claims and various obvious modifications and equivalent arrangements as are apparent to those skilled in the art.

Claims

1. A color conversion substrate, wherein: The color conversion substrate comprises: an upper substrate comprising a first opening region, a second opening region adjacent to the first opening region, and a third opening region adjacent to the second opening region; a first color filter disposed on the upper substrate and having a first opening defining the second opening region; a second color filter disposed on the first color filter and having a second opening defining the third opening region; and a third color filter disposed on the second color filter and having a third opening defining the first opening region; The first color filter does not overlap with the light blocking area surrounding the third opening area.

2. The color conversion substrate according to claim 1, wherein The first color filter overlaps a light blocking area surrounding the second opening area.

3. The color conversion substrate according to claim 1, wherein The first color filter overlaps the first opening area and a light blocking area surrounding the first opening area.

4. The color conversion substrate according to claim 1, wherein The second color filter does not overlap with a light blocking area surrounding the first opening area.

5. The color conversion substrate according to claim 4, wherein The second color filter overlaps the light blocking area surrounding the third opening area.

6. The color conversion substrate according to claim 4, wherein The second color filter overlaps the second opening area and a light blocking area surrounding the second opening area.

7. The color conversion substrate of claim 1, wherein The third color filter does not overlap with the light blocking area surrounding the second opening area.

8. The color conversion substrate according to claim 7, wherein The third color filter overlaps a light blocking area surrounding the first opening area.

9. The color conversion substrate of claim 7, wherein: The third color filter overlaps the third opening area and the light blocking area surrounding the third opening area.

10. The color conversion substrate of claim 1, wherein The first opening area, the second opening area, and the third opening area are arranged side by side.

11. The color conversion substrate of claim 1 , wherein: The first color filter is a blue color filter, The second color filter is a red color filter, and The third color filter is a green color filter.

12. The color conversion substrate of claim 1, wherein The color conversion substrate further comprises: A dam is provided on the upper substrate and overlaps the light blocking region surrounding the first and second opening regions and the light blocking region surrounding the third opening region.

13. The color conversion substrate of claim 12, wherein: The color conversion substrate further comprises: a first color conversion pattern disposed on the first color filter, the first color conversion pattern being received by the dam and comprising first quantum dots; a second color conversion pattern disposed on the second color filter, the second color conversion pattern being accommodated by the dam and comprising second quantum dots; and A third color conversion pattern is disposed on the third color filter, the third color conversion pattern being accommodated by the dam and including third quantum dots.

14. A display device, wherein: The display device includes: an emitting substrate and a color conversion substrate disposed on the emitting substrate, wherein The emitting substrate comprises: lower basement; a first pixel electrode, disposed on the lower substrate; a second pixel electrode disposed on the lower substrate and adjacent to the first pixel electrode; and a third pixel electrode, disposed on the lower substrate and adjacent to the second pixel electrode; The color conversion substrate comprises: an upper substrate comprising a first opening region, a second opening region adjacent to the first opening region, and a third opening region adjacent to the second opening region; a first color filter disposed between the lower substrate and the upper substrate, the first color filter having a first opening defining the second opening region; a second color filter disposed between the first color filter and the lower substrate, the second color filter having a second opening defining the third opening region; and a third color filter disposed between the second color filter and the lower substrate, the third color filter having a third opening defining the first opening region, and The first color filter does not overlap with a light blocking area surrounding the third opening area.

15. The display device according to claim 14, wherein The first color filter overlaps a light blocking area surrounding the second opening area.

16. The display device according to claim 14, wherein: The first color filter overlaps the first opening area and a light blocking area surrounding the first opening area.

17. The display device according to claim 14, wherein: The second color filter does not overlap with a light blocking area surrounding the first opening area.

18. The display device according to claim 14, wherein The first color filter overlaps with the first pixel electrode, The second color filter overlaps the second pixel electrode, and The third color filter overlaps the third pixel electrode.

19. The display device according to claim 14, wherein The display device further includes: an emission layer disposed on the first pixel electrode to the third pixel electrode; and The common electrode is arranged on the emission layer.

20. The display device according to claim 14, wherein The display device further includes: an active pattern disposed on the lower substrate; a gate electrode disposed on the active pattern; and A connection electrode is disposed on the gate electrode and electrically connected to the active pattern.

Images