Electromagnetic wave providing apparatus and substrate processing apparatus including same

Abstract

Provided are an electromagnetic wave supply apparatus for controlling plasma density using a voltage supplied to a process chamber, and a substrate processing apparatus including the electromagnetic wave supply apparatus. The substrate processing apparatus includes: a chamber housing in which an internal space for processing a substrate therein is defined; a process gas supply unit for supplying a process gas into the inner space of the chamber housing; a first electrode disposed in the inner space of the chamber case; and an electromagnetic wave providing device configured to provide power to the first electrode using electromagnetic waves, in which the electromagnetic wave providing device is configured to control a plasma density generated in the inner space of the chamber case based on an effective value of a voltage related to the power.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority from Korean Patent Application No. 10-2024-0024795 filed on February 21, 2024, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to an electromagnetic wave providing device applied to an apparatus for processing a substrate using plasma, and a substrate processing apparatus including the electromagnetic wave providing device. Background Art

[0003] When plasma is used to process a substrate, the plasma density within the process chamber can vary due to polymer deposition during substrate processing. However, to prevent variations in the etch rate (ER) across different regions of the substrate during processing, the plasma density within the process chamber must be maintained at a uniform level. Summary of the Invention

[0004] A technical object to be achieved according to the present disclosure is to provide an electromagnetic wave supplying apparatus that controls plasma density using a voltage supplied to a process chamber, and a substrate processing apparatus including the electromagnetic wave supplying apparatus.

[0005] The objects according to the present disclosure are not limited to the above-mentioned objects. Other objects and advantages not mentioned according to the present disclosure can be understood based on the following description and can be more clearly understood based on the embodiments according to the present disclosure. In addition, it is easy to understand that the objects and advantages according to the present disclosure can be achieved using the means shown in the claims and their combinations.

[0006] In order to achieve the above-mentioned technical objectives, according to some embodiments of the present disclosure, a substrate processing device includes: a chamber shell, which defines an internal space in the chamber shell, and the internal space is used to process the substrate therein; a process gas supply unit, which is used to provide process gas into the internal space of the chamber shell; a first electrode, which is arranged in the internal space of the chamber shell; and an electromagnetic wave providing device, which is configured to use electromagnetic waves to provide power to the first electrode, wherein the electromagnetic wave providing device is configured to control the plasma density generated in the internal space of the chamber shell based on the effective value of a voltage related to the power.

[0007] In order to achieve the above-mentioned technical objectives, according to some embodiments of the present disclosure, an electromagnetic wave providing device is included in a process chamber, which is configured to process a substrate using plasma, and the electromagnetic wave providing device includes: a power supply, configured to provide power to an electrode contained in the process chamber using electromagnetic waves; an impedance matching unit, configured to perform impedance matching between the power supply and the electrode; a sensor, installed on a line connecting the power supply and the electrode to each other; and a controller, configured to compensate for power loss based on an effective value of a voltage obtained by the sensor, wherein the controller is configured to control the plasma density generated in the internal space of the process chamber based on the effective value.

[0008] In order to achieve the above-mentioned technical objectives, a substrate processing device according to some embodiments of the present disclosure includes: a chamber shell, which defines an internal space in the chamber shell, and the internal space is used to process the substrate therein; a process gas supply unit, which is used to provide process gas into the internal space of the chamber shell; a first electrode, which is arranged in the lower area of ​​the internal space of the chamber shell; a second electrode, which is arranged in the upper area of ​​the internal space of the chamber shell; and an electromagnetic wave providing device, which is configured to use electromagnetic waves to provide power to at least one of the first electrode and the second electrode, wherein the electromagnetic wave providing device includes: a first power supply, which is used to output power to the first electrode; a first sensor, which is installed on a line connecting the first power supply and the first electrode to each other; a second power supply, which is used to output power to the second electrode; a second sensor, which is installed on a line connecting the second power supply and the second electrode to each other; and a controller, which is configured to compensate for power loss based on the effective value of a voltage obtained by at least one of the first sensor and the second sensor.

[0009] Specific details of other embodiments are included in the detailed description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The above and other aspects and features of the present disclosure will become more apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0011] Figure 1 is a plan view showing the internal structure of a semiconductor manufacturing apparatus according to a first embodiment;

[0012] Figure 2 is a plan view showing the internal structure of a semiconductor manufacturing apparatus according to a second embodiment;

[0013] Figure 3 is a plan view showing the internal structure of a semiconductor manufacturing apparatus according to a third embodiment;

[0014] Figure 4 is a sectional view showing the internal structure of the substrate processing apparatus according to the first embodiment;

[0015] Figure 5 is a sectional view showing the internal structure of a substrate processing apparatus according to a second embodiment;

[0016] Figure 6 is a sectional view showing the internal structure of a substrate processing apparatus according to a third embodiment;

[0017] Figure 7 is an exemplary diagram showing an electromagnetic wave providing device according to a first embodiment of the present disclosure;

[0018] Figure 8 is an exemplary diagram showing a first impedance matching unit constituting the electromagnetic wave providing device according to the first embodiment of the present disclosure;

[0019] Figure 9 is an exemplary diagram showing a first sensor constituting the electromagnetic wave providing device according to the first embodiment of the present disclosure;

[0020] Figure 10 is a first flow chart illustrating an operating method of a controller constituting an electromagnetic wave providing apparatus according to a first embodiment of the present disclosure;

[0021] Figure 11 is a second flow chart illustrating an operating method of the controller constituting the electromagnetic wave providing device according to the first embodiment of the present disclosure;

[0022] Figure 12 is an exemplary diagram showing an electromagnetic wave providing device according to a second embodiment of the present disclosure;

[0023] Figure 13 is an exemplary diagram showing an electromagnetic wave providing device according to a third embodiment of the present disclosure; and

[0024] Figure 14 is a flowchart illustrating an impedance control method in a substrate processing apparatus of an electromagnetic wave providing apparatus according to a first embodiment of the present disclosure. DETAILED DESCRIPTION

[0025] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same components in the drawings are denoted by the same reference numerals, and repeated description thereof will be omitted.

[0026] The present disclosure relates to a substrate processing apparatus for processing a substrate using plasma, and semiconductor manufacturing equipment including multiple substrate processing apparatuses. The substrate processing apparatus may include an electromagnetic wave generator that provides an RF signal to a process chamber to generate plasma therein. The electromagnetic wave generator can control the plasma density in real time by varying the power supplied to the process chamber.

[0027] Hereinafter, a substrate processing apparatus and a semiconductor manufacturing equipment including the substrate processing apparatus will be described first, and then an electromagnetic wave supplying apparatus will be described.

[0028] Figure 1 is a plan view showing an example of the internal structure of the semiconductor manufacturing apparatus according to the first embodiment. Figure 2 is a plan view showing an example of the internal structure of a semiconductor manufacturing apparatus according to the second embodiment. Figure 3 is a plan view showing an example of the internal structure of a semiconductor manufacturing apparatus according to the third embodiment.

[0029] The first direction D1 and the second direction D2 define a plane in a horizontal direction.

[0030] For example, the first direction D1 may be a front-to-back direction, and the second direction D2 may be a left-to-right direction. Alternatively, the first direction D1 may be a left-to-right direction, and the second direction D2 may be a front-to-back direction. The third direction D3 may be a height direction, which is a direction perpendicular to the plane defined by the first direction D1 and the second direction D2. The third direction D3 may be a vertical direction.

[0031] according to Figures 1 to 3 , the semiconductor manufacturing equipment 100 may be configured to include a load port module 110 , an index module 120 , a load lock chamber 130 , a transfer module 140 , and a process chamber 150 .

[0032] The semiconductor manufacturing equipment 100 is a system that processes substrates using etching processes, cleaning processes, deposition processes, and the like. The semiconductor manufacturing equipment 100 may include one process chamber. However, the embodiments of the present disclosure are not limited thereto, and the semiconductor manufacturing equipment 100 may include multiple process chambers. The multiple process chambers may include process chambers of the same type. However, the embodiments of the present disclosure are not limited thereto, and the multiple process chambers may include process chambers of different types. If the semiconductor manufacturing equipment 100 includes multiple process chambers, the semiconductor manufacturing equipment 100 may be implemented as a multi-chamber substrate processing system.

[0033] The load port module 110 is configured so that a container SC containing a plurality of substrates therein can be positioned thereon. In this regard, the container SC can be, for example, a FOUP (Front Opening Pod).

[0034] The container SC may be loaded into or unloaded from the loadport module 110. Also, in the loadport module 110, substrates stored in the container SC may be loaded into or unloaded from the loadport module 110.

[0035] When the loading or unloading target is a container SC, the container transport device can load the container SC into the load port module 110 or unload it from the load port module 110. Figures 1 to 3 Although not shown, the container transport device may be an OHT (Overhead Crane Transporter). When the loading or unloading target is a substrate, the first transfer robot 122 may load or unload the substrate into or from the container SC located on the loadport module 110 .

[0036] The load port modules 110 may be located at a plurality of positions, respectively, and may be disposed in front of the index module 120. For example, three load port modules 110a, 110b, and 110c including a first load port module 110a, a second load port module 110b, and a third load port module 110c may be disposed in front of the index module 120.

[0037] When the loadport modules 110 are located at multiple positions and in front of the index module 120, the containers SC located on each loadport module can each hold different types of objects. For example, the first container SC1 located on the first loadport module 110a can hold a wafer-type sensor. The second container SC2 located on the second loadport module 110b can hold a substrate (i.e., a wafer). The third container SC3 located on the third loadport module 110c can hold consumable components (such as focus rings and edge rings).

[0038] However, this embodiment is not limited thereto. Containers SC located in different load port modules may each contain objects of the same type. Alternatively, containers located in some of the multiple load port modules may each contain objects of the same type, while containers located in other load port modules may each contain objects of different types.

[0039] The index module 120 may be disposed between the loadport module 110 and the load lock chamber 130 and may be implemented as an interface so that substrates may be transferred between the container SC on the loadport module 110 and the load lock chamber 130 through the interface.

[0040] The index module 120 may include a first module housing 121 and a first transfer robot 122. The first transfer robot 122 may be disposed within the first module housing 121 and may transfer substrates between the load port module 110 and the load lock chamber 130. The first module housing 121 may have an internal environment that is an atmospheric pressure environment created therein, and the first transfer robot 122 may operate in the atmospheric pressure environment. A single first transfer robot 122 may be included in the first module housing 121. However, embodiments of the present disclosure are not limited thereto, and a plurality of first transfer robots 122 may be included in the first module housing 121.

[0041] In this embodiment, a front end module (FEM) may be provided at one side of the load lock chamber 130. The front end module (FEM) may include a load port module 110 and an index module 120, and in one example may be implemented as an equipment front end module (EFEM).

[0042] The load lock chamber 130 may be used as a buffer chamber between an input port and an output port in the semiconductor manufacturing apparatus 100. That is, the load lock chamber 130 may temporarily store unprocessed substrates or processed substrates therein when disposed between the load port module 110 and the process chamber 150. Figures 1 to 3 Although not shown, the load lock chamber 130 may include a buffer stage for temporarily storing substrates.

[0043] A plurality of load lock chambers 130 may be provided between the index module 120 and the transfer module 140. For example, two load lock chambers 130a and 130b (such as a first load lock chamber 130a and a second load lock chamber 130b) may be provided between the index module 120 and the transfer module 140.

[0044] One of the first load lock chamber 130a and the second load lock chamber 130b may temporarily store therein unprocessed substrates to be transferred from the index module 120 to the transfer module 140. The other of the first load lock chamber 130a and the second load lock chamber 130b may temporarily store therein processed substrates to be transferred from the transfer module 140 to the index module 120. However, the present disclosure is not limited thereto, and each of the first load lock chamber 130a and the second load lock chamber 130b may play both a role of temporarily storing therein unprocessed substrates and a role of temporarily storing therein processed substrates.

[0045] The load lock chamber 130 can change its internal space to a vacuum environment or an atmospheric pressure environment using a gate valve, etc. Specifically, when the first transfer robot 122 of the index module 120 loads a substrate into the load lock chamber 130 or unloads a substrate from the load lock chamber 130, the load lock chamber 130 can change its internal space to an environment that is the same as or similar to the internal environment of the index module 120. Furthermore, when the second transfer robot 142 of the transfer module 140 loads a substrate into the load lock chamber 130 or unloads a substrate from the load lock chamber 130, the load lock chamber 130 can change its internal space to an environment that is the same as or similar to the internal environment of the transfer module 140. Therefore, the load lock chamber 130 can prevent the internal pressure state of the index module 120 or the internal pressure state of the transfer module 140 from changing.

[0046] The transfer module 140 may be disposed between the load lock chamber 130 and the process chamber 150 and may be implemented as an interface so that a substrate may be transferred between the load lock chamber 130 and the process chamber 150 through the interface.

[0047] The transfer module 140 may include a second module housing 141 and a second transfer robot 142. The second transfer robot 142 may be disposed within the second module housing 141 and may transfer substrates between the load lock chamber 130 and the process chamber 150. The second module housing 141 may have a vacuum environment as its internal environment, and the second transfer robot 142 may operate in the vacuum environment. A single second transfer robot 142 may be disposed in the second module housing 141. However, embodiments of the present disclosure are not limited thereto, and a plurality of second transfer robots 142 may be disposed in the second module housing 141.

[0048] The transfer module 140 may be connected to a plurality of process chambers 150. To this end, the second module housing 141 may include a plurality of sides, and the second transfer robot 142 may be configured to freely pivot around each side of the second module housing 141 so that the second transfer robot 142 can load or unload substrates into or from each of the plurality of process chambers 150.

[0049] The process chamber 150 is used to process a substrate. When an unprocessed substrate is provided to the process chamber 150, the process chamber 150 may process the substrate and may provide the processed substrate to the load lock chamber 130 through the transfer module 140. A more detailed description of the process chamber 150 will be described later.

[0050] When the semiconductor manufacturing equipment 100 includes a plurality of process chambers, the semiconductor manufacturing equipment 100 may be formed into a structure having a cluster platform. For example, the plurality of process chambers may be arranged in a cluster manner around the transfer module 140, such as Figure 1 However, the present embodiment is not limited thereto. In the case where the semiconductor manufacturing equipment 100 includes a plurality of process chambers, the semiconductor manufacturing equipment 100 may be formed into a structure having a quadrilateral platform. For example, Figure 2 As shown in the example of , a plurality of process chambers may be arranged in a quadrilateral manner around the transfer module 140. Alternatively, in the case where the semiconductor manufacturing equipment 100 includes a plurality of process chambers, the semiconductor manufacturing equipment 100 may be formed into a structure having a straight platform. Figure 3 As shown in the example, multiple process chambers can be arranged in a straight line around the transfer module 140, wherein two arrangements of process chambers can be respectively set on opposite sides of the transfer module 140, and different process chambers in the two arrangements can face each other in a corresponding manner, and each of the two arrangements can extend in a straight line.

[0051] although Figures 1 to 3 Although not shown, the semiconductor manufacturing apparatus 100 may further include a control device. The control device is configured to control the operation of each module constituting the semiconductor manufacturing apparatus 100. For example, the control device may be configured to control substrate transfer by the first transfer robot 122 or the second transfer robot 142, control changes in the internal environment of the load lock chamber 130, and control the overall substrate processing process of the process chamber 150.

[0052] The control device may include: a processor that controls each component that makes up semiconductor manufacturing equipment 100; a network through which the components communicate with each other in a wired or wireless manner; one or more instructions related to controlling the function or operation of each component; and a storage device that stores a processing solution including instructions, various data, etc. The control device may also include a user interface, which includes an input device for an operator to perform command input operations, etc. to manage semiconductor manufacturing equipment 100, and an output device for visualizing and displaying the operating status of semiconductor manufacturing equipment 100. The control device may be implemented as a computing device for data processing and analysis, command transmission, etc.

[0053] The instructions may be provided in the form of a computer program or application. A computer program may be stored in a computer-readable recording medium and contain one or more instructions. The instructions may include code generated by a compiler, code executable by an interpreter, and the like. The storage device may be implemented as one or more storage media selected from a flash memory, a HDD, an SSD, a card memory, RAM, SRAM, ROM, EEPROM, PROM, magnetic memory, a magnetic disk, and an optical disk.

[0054] Next, the process chamber 150 will be described. A plurality of process chambers 150 may be provided within the semiconductor manufacturing apparatus 100, and the plurality of process chambers may be arranged around the transfer module 140 so as to be spaced apart from one another. However, the present disclosure is not limited thereto, and a single process chamber 150 may be provided within the semiconductor manufacturing apparatus 100. The process chamber 150 may process a substrate. Hereinafter, the process chamber 150 will be defined as a substrate processing apparatus, and its internal structure will be described.

[0055] Figure 4 2 is a cross-sectional view showing an example of the internal structure of the substrate processing apparatus according to the first embodiment. The substrate processing apparatus 200 can process the substrate W using plasma. The substrate processing apparatus 200 can process the substrate W in a dry manner.

[0056] The substrate processing apparatus 200 can process the substrate W in a vacuum environment. Figure 4 The substrate processing apparatus 200 may be configured to include a chamber housing CH, a substrate supporting unit 210, a cleaning gas supply unit 220, a process gas supply unit 230, a showerhead unit 240, a plasma generating unit 250, a liner unit 260, a baffle unit 270, a window module WM, and an antenna unit 280.

[0057] The chamber housing CH provides a space for performing a process for treating a substrate W using plasma (i.e., a plasma process). The chamber housing CH may be made of anodized aluminum with an anodized film formed on its surface, and its interior space may be configured to be airtight. The chamber housing CH may be cylindrical. However, embodiments of the present disclosure are not limited thereto, and the chamber housing CH may be configured in other shapes. The chamber housing CH may have an exhaust hole 201 defined in its bottom.

[0058] The exhaust hole 201 may be connected to an exhaust line 203 equipped with a pump 202. The exhaust hole 201 may exhaust process byproducts generated during the plasma process and residual gas in the chamber housing CH to the outside of the chamber housing CH through the exhaust line 203. In this case, the inner space of the chamber housing CH may be depressurized.

[0059] The opening 204 may extend through the sidewall of the chamber housing CH. The opening 204 may serve as a passage through which the substrate W enters and exits the interior of the chamber housing CH. The opening 204 may be configured to be automatically opened and closed by, for example, a door assembly 205.

[0060] The door assembly 205 may be configured to include an outer door 206 and a door driver 207. The outer door 206 may open and close the opening 204 while being disposed on the outer wall of the chamber housing CH. The outer door 206 may be moved in a height direction D3 of the substrate processing apparatus 200 under the control of the door driver 207. The door driver 207 may be operated using at least one element selected from a motor, a hydraulic cylinder, and a pneumatic cylinder.

[0061] The substrate support unit 210 is installed in the lower region of the interior space of the chamber housing CH. The substrate support unit 210 can use electrostatic force to attract and support the substrate W. For example, the substrate support unit 210 can be implemented as an electrostatic chuck (ESC). However, the present disclosure is not limited thereto, and the substrate support unit 210 can use various other solutions (such as vacuum, mechanical clamping, etc.) to support the substrate W thereon.

[0062] When the substrate support unit 210 is implemented as an electrostatic chuck (ESC), the substrate support unit 210 may be configured to include a base plate 211 and a dielectric layer 212. The dielectric layer 212 may be disposed on the base plate 211 and may attract and support a substrate W placed thereon. The base plate 211 may be made of a material having excellent corrosion resistance and heat resistance. For example, the base plate 211 may be implemented as an aluminum body. The dielectric layer 212 may be made of a ceramic material, for example, and may be implemented as a ceramic chuck.

[0063] although Figure 4 Although not shown in the figure, the substrate supporting unit 210 may be configured to further include a bonding layer. The bonding layer may bond the substrate 211 and the dielectric layer 212 to each other. The bonding layer may include, for example, a polymer.

[0064] The ring structure 213 is provided to surround the outer edge region of the dielectric layer 212. When a plasma process is performed inside the chamber housing CH, the ring structure 213 can play a role in concentrating ions on the substrate W. The ring structure 213 can be made of silicon. The ring structure 213 can be implemented as a focus ring, for example.

[0065] although Figure 4 Although not shown, the ring structure 213 may also include an edge ring. The edge ring may be disposed below or outside the focus ring. The edge ring may protect the side surfaces of the dielectric layer 212 from plasma damage. The edge ring may be made of an insulating material, such as ceramic or quartz.

[0066] When a substrate processing process is performed within the chamber housing CH, a heating member 214 and a cooling member 215 are provided to maintain the substrate W at the process temperature. The heating member 214 may be mounted within the dielectric layer 212 and may be implemented as a heating filament. The cooling member 215 may be mounted within the base plate 211 and may be implemented as a cooling pipe through which a coolant flows. A cooling device or chiller 216 may supply coolant to the cooling member 215. The cooling device 216 may use cooling water as the coolant. However, embodiments of the present disclosure are not limited thereto, and helium (He) gas may be used as the coolant. Alternatively, the cooling device 216 may use both cooling water and helium gas as the coolant. In one example, the heating member 214 may not be disposed within the substrate support unit 210.

[0067] The cleaning gas supply unit 220 supplies a cleaning gas onto the dielectric layer 212 or the ring structure 213 to remove foreign substances remaining on the dielectric layer 212 or the ring structure 213. For example, the cleaning gas supply unit 220 may supply nitrogen (N2) gas as the cleaning gas.

[0068] The cleaning gas supply unit 220 may include a cleaning gas supply source 221 and a cleaning gas supply pipe 222. The cleaning gas supply pipe 222 may be connected to the space between the dielectric layer 212 and the ring structure 213. The cleaning gas supplied from the cleaning gas supply source 221 may flow through the cleaning gas supply pipe 222 to the space between the dielectric layer 212 and the ring structure 213 to remove foreign matter remaining on the edge portion of the dielectric layer 212 or the upper portion of the ring structure 213.

[0069] The process gas supply unit 230 supplies process gas to the interior of the chamber housing CH. The process gas supply unit 230 may supply process gas to the interior of the chamber housing CH through a hole extending through the upper cover (i.e., the window module WM) of the chamber housing CH. However, the present disclosure is not limited thereto, and the process gas supply unit 230 may supply process gas to the interior of the chamber housing CH through a hole extending through the sidewall of the chamber housing CH.

[0070] The process gas supply unit 230 may include a process gas supply source 231 and a process gas supply pipe 232. The process gas supply source 231 may provide a gas for processing the substrate W as a process gas.

[0071] The shower head unit 240 sprays the process gas provided from the process gas supply source 231 onto the entire area of ​​the substrate W placed in the inner space of the chamber housing CH. The shower head unit 240 may be connected to the process gas supply source 231 via a process gas supply pipe 232 .

[0072] The showerhead unit 240 may be disposed in the interior space of the chamber housing CH and may include a showerhead body 241 and a plurality of gas supply holes 242. The showerhead body 241 may be made of silicon. However, the embodiments of the present disclosure are not limited thereto, and the showerhead body 241 may be made of metal. The plurality of gas supply holes 242 may extend through the surface of the showerhead body 241 along the vertical direction D3. The plurality of gas supply holes 242 may be spaced apart from each other by a predetermined interval and may extend through the showerhead body 241. The plurality of gas supply holes 242 may uniformly spray the process gas onto the entire area of ​​the substrate W.

[0073] Although Figure 4 Although not shown, the showerhead body 241 can be divided into a plurality of modules. For example, the showerhead body 241 can be divided into a first head module, a second head module, and a third head module. The first head module can be arranged at a position corresponding to or overlapping with the center area of ​​the substrate W. The second head module can be arranged to surround the outer edge of the first head module. The second head module can be arranged at a position corresponding to or overlapping with the middle area of ​​the substrate W. The third head module can be arranged to surround the outer edge of the second head module. The third head module can be arranged at a position corresponding to or overlapping with the edge area of ​​the substrate W.

[0074] The plasma generating unit 250 generates plasma from the gas remaining in the discharge space. In this regard, the discharge space can be implemented as a portion of the internal space of the chamber housing CH defined between the showerhead unit 240 and the window module WM. Alternatively, the discharge space can be a space defined between the substrate support unit 210 and the showerhead unit 240. When the discharge space is the space defined between the substrate support unit 210 and the showerhead unit 240, the discharge space can be divided into a plasma region and a process region. The plasma region can be located at the top of the process region.

[0075] The plasma generating unit 250 may generate plasma in the discharge space using an ICP (Inductively Coupled Plasma) source. For example, the plasma generating unit 250 may generate plasma in the discharge space using the substrate supporting unit 210 and the antenna unit 280 as a first electrode (lower electrode) and a second electrode (upper electrode), respectively.

[0076] However, the present embodiment is not limited thereto. The plasma generating unit 250 may generate plasma in the discharge space using a CCP (capacitively coupled plasma) source. For example, the plasma generating unit 250 may generate plasma in the discharge space using the substrate support unit 210 and the showerhead unit 240 as a first electrode (lower electrode) and a second electrode (upper electrode), respectively. First, a case where the plasma generating unit 250 is implemented using an ICP source will be described, followed by a case where the plasma generating unit 250 is implemented using a CCP source.

[0077] The plasma generating unit 250 may be configured to include a first high frequency power source 251 , a first connection line 252 , a second high frequency power source 253 , and a second connection line 254 .

[0078] The first high-frequency power supply 251 can apply RF power to the first electrode. The first high-frequency power supply 251 can serve as a plasma source for generating plasma within the chamber housing CH. However, the present disclosure is not limited thereto. The first high-frequency power supply 251, together with the second high-frequency power supply 253, can be used to control the characteristics of the plasma within the chamber housing CH.

[0079] The first high-frequency power source 251 may include a plurality of first high-frequency power sources included in the substrate processing apparatus 200. In this case, the plasma generating unit 250 may include a first matching network electrically connected to each of the first high-frequency power sources. When power of different frequencies is inputted thereto from the plurality of first high-frequency power sources, the first matching network may be used to match the power of different frequencies with each other and apply the matching result to the first electrode.

[0080] The first connection line 252 may connect the first electrode to GND. The first high-frequency power supply 251 may be mounted on the first connection line 252. However, the present disclosure is not limited thereto, and the first connection line 252 may connect the first electrode and the first high-frequency power supply 251 to each other. For example, the first connection line 252 may be implemented as an RF rod.

[0081] The second high-frequency power supply 253 applies RF power to the second electrode. The second high-frequency power supply 253 can control the plasma characteristics in the chamber housing CH. For example, the second high-frequency power supply 253 can control the ion bombardment energy in the chamber housing CH.

[0082] The second high-frequency power source 253 may include a plurality of second high-frequency power sources included in the substrate processing apparatus 200. In this case, the plasma generating unit 250 may include a second matching network electrically connected to each of the second high-frequency power sources. When power of different amplitudes is inputted thereto from the plurality of second high-frequency power sources, the second matching network may function to match the power of different amplitudes to each other and apply the matching result to the second electrode.

[0083] The second connection line 254 connects the second electrode to GND. The second high frequency power supply 253 may be mounted on the second connection line 254.

[0084] The liner unit 260 is also defined as a wall liner and protects the interior of the chamber housing CH from arc discharge generated during a process of exciting process gas or impurities generated during a substrate treating process. The liner unit 260 may be formed to cover the inner wall of the chamber housing CH.

[0085] The baffle unit 270 functions to exhaust process byproducts or unreacted gases from the plasma within the chamber housing CH to the outside. The baffle unit 270 may be installed in the space between the substrate support unit 210 and the inner wall of the chamber housing CH (or the liner unit 260 ), and may be installed adjacent to the exhaust hole 201 . The baffle unit 270 may be configured in an annular ring shape and may be disposed between the substrate support unit 210 and the inner wall of the chamber housing CH.

[0086] The baffle unit 270 may include a plurality of slots extending through the main body in a vertical direction D3 to control the flow of process gases within the chamber housing CH. The baffle unit 270 may be made of an etch-resistant material to minimize damage or deformation caused by free radicals, etc., within the interior space of the chamber housing CH where plasma is generated. For example, the baffle unit 270 may include quartz.

[0087] The window module WM serves as an upper cover of the chamber housing CH, which seals the interior space of the chamber housing CH. The window module WM can be configured to be removable from the chamber housing CH. However, the embodiments of the present disclosure are not limited thereto, and the window module WM can be formed integrally with the chamber housing CH. The window module WM can be formed as a dielectric window made of an insulating material. For example, the window module WM can be made of aluminum oxide. The window module WM can include a coating film on its surface to suppress the generation of particles when a plasma process is performed in the interior space of the chamber housing CH.

[0088] The antenna unit 280 generates magnetic and electric fields within the chamber housing CH to excite the process gas into plasma. The antenna unit 280 can operate using RF power supplied from the second high-frequency power supply 253. The antenna unit 280 can be disposed on the top of the chamber housing CH. For example, the antenna unit 280 can be disposed on the window module WM. However, the present disclosure is not limited thereto, and the antenna unit 280 can also be disposed on the sidewall of the chamber housing CH.

[0089] The antenna unit 280 may include a body 281 and an antenna 282 disposed inside or on a surface of the body 281. The antenna 282 may be formed in a closed loop using a coil, a spiral shape, or various other shapes along the width direction D1 of the chamber housing CH.

[0090] The antenna unit 280 may be formed to have a planar structure. However, the present disclosure is not limited thereto, and the antenna unit 280 may be formed to have a cylindrical structure. When the antenna unit 280 is formed to have a planar structure, the antenna unit may be disposed on the top of the chamber housing CH. When the antenna unit 280 is formed to have a cylindrical structure, the antenna unit 280 may be disposed to surround the outer wall of the chamber housing CH.

[0091] Reference Figure 4 , it has been described above that the plasma generating unit 250 can be implemented using an ICP source. Figure 5 and Figure 6 , the case where the plasma generating unit 250 is implemented using a CCP source will be described. Figure 4 The description of the content of the case is repeated, and only the differences between the two are described.

[0092] Figure 5 is a cross-sectional view showing an example of the internal structure of a substrate processing apparatus according to the second embodiment. Figure 6 is a cross-sectional view showing an example of the internal structure of a substrate processing apparatus according to the third embodiment.

[0093] according to Figure 5 and Figure 6 The substrate processing apparatus 200 may be configured to include a chamber housing CH, a substrate supporting unit 210, a cleaning gas supply unit 220, a process gas supply unit 230, a showerhead unit 240, a plasma generating unit 250, a liner unit 260, a baffle unit 270, and a window module WM.

[0094] That is to say, with Figure 4 Compared with the substrate processing apparatus 200, Figure 5 and Figure 6 The substrate processing apparatus 200 may not include the antenna unit 280 .

[0095] The plasma generating unit 250 may be configured to include a first high frequency power source 251, a first connection line 252, a second high frequency power source 253, and a second connection line 254, as shown in FIG. Figure 5 However, the present disclosure is not limited thereto, and the plasma generating unit 250 may be configured to include a first high frequency power source 251, a first connection line 252, and a second connection line 254, as shown. Figure 6 That is, with Figure 5 Compared with the plasma generating unit 250, Figure 6 The plasma generating unit 250 may not include the second high frequency power supply 253 .

[0096] In accordance with Figure 4 In the example of , the second connection line 254 can be connected to the antenna 282 of the antenna unit 280. The second high frequency power supply 253 can apply RF power to the antenna 282 of the antenna unit 280. Figure 5 In the example of FIG. 2 , the second connection line 254 may be connected to the showerhead body 241 . The second high frequency power source 253 may apply RF power to the showerhead body 241 .

[0097] In accordance with Figure 5 In the example of , the second high frequency power supply 253 can be installed on the second connecting line 254. Figure 6 In the example of FIG. 2 , the second high frequency power source 253 may not be installed on the second connection line 254 . When the second high frequency power source 253 is installed on the second connection line 254 , the plasma generating unit 250 may apply multiple frequencies to the substrate processing apparatus 200 .

[0098] The plasma generating unit 250 may generate plasma in the inner space of the chamber housing CH to process the substrate W. The plasma generating unit 250 may generate plasma using upper and lower electrodes disposed in the inner space of the chamber housing CH or outside thereof.

[0099] The plasma generating unit 250 may include an electromagnetic wave providing device to generate plasma. The electromagnetic wave providing device may provide electromagnetic waves to the inner space of the chamber housing CH.

[0100] Figure 7 : is an exemplary diagram showing an electromagnetic wave providing device according to a first embodiment of the present disclosure. Figure 7 , the electromagnetic wave providing apparatus 300 may be configured to include a first power source 310 , a first impedance matching unit 320 , a first sensor 330 , and a controller 340 .

[0101] The electromagnetic wave supply device 300 can use electromagnetic waves to supply power to the first electrode 410. When power is supplied to the first electrode 410 by the electromagnetic wave supply device 300, the first electrode 410 can generate plasma in the interior space of the chamber housing CH using the process gas. The first electrode 410 can be placed in the interior space of the chamber housing CH. The first electrode 410 can be a lower electrode in the substrate processing apparatus 200. For example, the first electrode 410 can be the substrate support unit 210 implemented as an electrostatic chuck (ESC).

[0102] The first power source 310 may output power to the first electrode 410. The power provided from the first power source 310 may be transmitted to the first electrode 410 via the first impedance matching unit 320. The first power source 310 and the first impedance matching unit 320 may be interconnected with each other via a first transmission line 350.

[0103] The first power source 310 may provide power to the first electrode 410 using an RF signal. The first power source 310 may provide power to the first electrode 410 using a high frequency signal. Figures 4 to 6 The first power source 310 may be implemented as the first high frequency power source 251 included in the substrate processing apparatus 200 .

[0104] The first power supply 310 may include a plurality of power modules. For example, the first power supply 310 may include a first power module 310a, a second power module 310b, and a third power module 310c. The first power module 310a, the second power module 310b, and the third power module 310c may be connected in parallel to each other and may be connected to the first impedance matching unit 320. The following description will be based on an example in which the first power supply 310 is composed of three power modules 310a, 310b, and 310c. However, the number of power modules in this embodiment is not limited thereto.

[0105] The first impedance matching unit 320 is configured to perform impedance matching between the first power source 310 and the first electrode 410. The first impedance matching unit 320 enables the RF signal provided by the first power source 310 to be transmitted to the first electrode 410 without loss. The first impedance matching unit 320 can eliminate the reactance term, allowing the RF signal to be fully transmitted to the first electrode.

[0106] The first power module 310a, the second power module 310b, and the third power module 310c can apply power with the same frequency amplitude. However, the present disclosure is not limited thereto, and the first power module 310a, the second power module 310b, and the third power module 310c can apply power with different frequency amplitudes. When the first power module 310a, the second power module 310b, and the third power module 310c apply power with different frequency amplitudes, the first impedance matching unit 320 can match the power with different frequency amplitudes applied from the first power module 310a, the second power module 310b, and the third power module 310c, respectively, and provide a matching result to the first electrode 410. The first impedance matching unit 320 may not be included in the electromagnetic wave providing device 300.

[0107] Figure 8 1 is an exemplary diagram showing a first impedance matching unit constituting the electromagnetic wave providing device according to the first embodiment of the present disclosure. Figure 8, the first impedance matching unit 320 may be configured to include a first capacitor 510 , a second capacitor 520 , and a first coil 530 .

[0108] The first impedance matching unit 320 can electrically connect each of the power supply modules 310a, 310b, and 310c to the first sensor 330 using the fourth transmission line 540. The power supply modules 310a, 310b, and 310c can be connected to each other in parallel, and the parallel combination thereof can be connected to the first sensor 330 in series via the fourth transmission line 540. The first capacitor 510 and the first coil 530 can be provided on the fourth transmission line 540.

[0109] The first capacitor 510 and the first coil 530 may be connected in series to each other and may be provided on the fourth transmission line 540. The first capacitor 510 may be provided closer to the first sensor 330 than the first coil 530. The first coil 530 may be provided closer to the combination of the power supply modules 310a, 310b, and 310c than the first capacitor 510.

[0110] The first impedance matching unit 320 may include a fifth transmission line 550 branched from the fourth transmission line 540. The fifth transmission line 550 may be connected to the ground GND. The second capacitor 520 may be provided on the fifth transmission line 550. The fifth transmission line 550 may branch from a portion of the fourth transmission line 540 that connects the combination of the power supply modules 310a, 310b, and 310c to the first coil 530.

[0111] Description will return reference Figure 7 conduct.

[0112] The first sensor 330 may be disposed between the first impedance matching unit 320 and the first electrode 410. The first sensor 330 and the first impedance matching unit 320 may be electrically connected to each other using the second transmission line 360. The first sensor 330 and the first electrode 410 may be electrically connected to each other using the third transmission line 370.

[0113] The first sensor 330 can measure the power value applied to the first electrode 410 from each of the power modules 310a, 310b, and 310c. When processing the substrate W, particles such as polymers may be generated from the substrate W. Then, the particles detached from the substrate W may not be removed and may be deposited on components within the substrate processing apparatus 200. That is, when processing the substrate W, the internal environment of the chamber housing CH may be changed due to the particles such as polymers.

[0114] When the internal environment of the chamber housing CH changes, the plasma density within the chamber housing CH may change. The power applied to the first electrode 410 from each of the power modules 310a, 310b, and 310c may be adjusted to control the change in plasma density. For example, when the plasma density decreases due to changes in the internal environment of the chamber housing CH, the power applied to the first electrode 410 may be increased to compensate for the decrease in plasma density.

[0115] The ideal value of the power applied from each of the power supply modules 310a, 310b, and 310c to the first electrode 410 can be calculated based on the power value output from each of the power supply modules 310a, 310b, and 310c. However, the ideal value of the power may be lost along the path of applying the power from each of the power supply modules 310a, 310b, and 310c to the first electrode 410. Therefore, after the power is applied to the first electrode 410, the actual value of the power absorbed into the plasma may differ from the ideal value.

[0116] The plasma density in the chamber housing CH is related to the power absorbed by the plasma. The power absorbed by the plasma is related to the effective value V of the voltage applied to the first electrode 410. rms The first sensor 330 can be used to calculate the effective value of the voltage applied to the first electrode 410 from each of the power supply modules 310a, 310b, and 310c. The first sensor 330 can be used to calculate the effective value of the voltage in real time. The controller 340 can be configured to adjust the power absorbed by the plasma in the chamber housing CH in real time based on the effective value of the voltage calculated by the first sensor 330, and can control the plasma density in the chamber housing CH in real time.

[0117] Figure 9 : is an exemplary diagram showing a first sensor constituting the electromagnetic wave providing device according to the first embodiment of the present disclosure. Figure 9 , the first sensor 330 may be configured to include a rod 560 and a second coil 570 .

[0118] Rod 560 can carry current. Rod 560 can carry current, allowing power to be applied to first electrode 410. Rod 560 can be made of a material that can conduct current. For example, rod 560 can be made of a metal material. Rod 560 can be connected to second transmission line 360 ​​and third transmission line 370. One end of rod 560 can be connected to second transmission line 360, and the other end of rod 560 can be connected to third transmission line 370.

[0119] The second coil 570 may be formed to surround the outer surface of the rod 560. The second coil 570 may be formed to surround the entire outer surface of the rod 560. However, the present disclosure is not limited thereto, and the second coil 570 may be formed to surround a portion of the outer surface of the rod 560. When the second coil 570 is formed to surround the outer surface of the rod 560 through which current flows, a magnetic field may be induced around the second coil 570. In this embodiment, the effective value of the voltage may be calculated based on the strength of the magnetic field.

[0120] Each of the second transmission line 360 ​​and the third transmission line 370 can be made of the same material as the rod 560. For example, each of the second transmission line 360, the rod 560, and the third transmission line 370 can be implemented as an RF rod. The RF rod can interconnect the first impedance matching unit 320 and the first electrode 410. The second coil 570 can be formed to surround a portion of the RF rod. The portion of the RF rod where the second coil 570 is provided can correspond to the first sensor 330.

[0121] Refer again Figure 7 Provide a description.

[0122] The controller 340 may be configured to control power applied to the first electrode 410. The controller 340 may be configured to control power applied to the first electrode 410 based on the effective value of the voltage calculated by the first sensor 330. The controller 340 may be configured to compensate for loss of power applied to the first electrode 410. The controller 340 may be configured to control the plasma density in the chamber housing CH to be maintained at a constant level through power loss compensation.

[0123] The controller 340 may be configured to control each of the power modules 310a, 310b, and 310c to adjust the power to be applied to the first electrode 410. However, the present disclosure is not limited thereto, and the controller 340 may be configured to control several power modules (one or two of 310a, 310b, and 310c) to adjust the power to be applied to the first electrode 410. The controller 340 may be configured to adjust the power to be applied to the first electrode 410 in real time. The controller 340 may be configured to control the plasma density in real time.

[0124] The control device for controlling the overall substrate processing process of the substrate processing apparatus 200 has been described above. According to the present disclosure, the control device can be used as the controller 340. However, the present disclosure is not limited thereto, and the controller 340 configured to control only the power adjustment function can be provided separately within the electromagnetic wave providing apparatus 300. The controller 340 can be configured to be implemented as a computing device in the same form as the control device. The controller 340 can be configured to include a computing device and can be implemented as a user interface (UI).

[0125] Figure 10 1 is a first flow chart showing an operating method of a controller constituting an electromagnetic wave providing device according to a first embodiment of the present disclosure. Figure 10 In S611, the effective value V of the voltage is obtained by the first sensor 330. rms , and in S612, the controller 340 may be configured to set the effective value V rms The reference value can be pre-stored in the memory. In this case, the controller 340 can be configured to read the reference value from the memory and then compare the effective value V rms The reference value can be received from an external device. In this case, the controller 340 can be configured to receive the reference value from the external device and then compare the effective value V rms Compare with the reference value. The reference value may be the ideal value V to be applied to the first electrode 410 spec .

[0126] When based on the effective value V rms With reference value V spec The comparison result between the two determines the effective value V rms Equal to the reference value V spec , in S613, the controller 340 is configured not to adjust the power value output from the first power source 310. That is, the output of the first power source 310 does not change and remains at the same level.

[0127] On the contrary, when determining the effective value V rms Not equal to reference value V spec When , in S614, the controller 340 is configured to adjust the power value output from the first power source 310. That is, the output of the first power source 310 changes.

[0128] The controller 340 may be configured to adjust the power value output from the first power source 310 so that the effective value V rms With reference value V spec Matching. The controller 340 can be configured to compensate for the effective value V rms With reference value V spec The controller 340 can be configured to be based on the effective value V rms With reference value V spec The power value output from the first power source 310 is adjusted based on the difference between them.

[0129] The controller 340 may be configured to control all power modules in the first power supply 310 so that the effective value V rms Equal to the reference value V spec. The controller 340 may be configured to control the first power module 310a, the second power module 310b, and the third power module 310c. The controller 340 may be configured to control the first power module 310a, the second power module 310b, and the third power module 310c so that the first power module 310a, the second power module 310b, and the third power module 310c output the same value of power. However, the present disclosure is not limited thereto, and the controller 340 may be configured to control the first power module 310a, the second power module 310b, and the third power module 310c so as to output different values ​​of power. Alternatively, the controller 340 may be configured to control some power modules selected from the first power module 310a, the second power module 310b, and the third power module 310c to output the same value of power, and control other power modules selected from the first power module 310a, the second power module 310b, and the third power module 310c to output different values ​​of power.

[0130] The controller 340 may be configured to control a portion of the power modules within the first power supply 310 so that the effective value V rms Equal to the reference value V spec The controller 340 may be configured to control one power module selected from the first power module 310a, the second power module 310b, and the third power module 310c. Except for the controlled power module, the other two power modules may maintain the same output value as before, that is, the power value may not be changed.

[0131] The controller 340 may be configured to control two power supply modules selected from the first power supply module 310a, the second power supply module 310b, and the third power supply module 310c so that the effective value V rms Equal to the reference value V spec . The controller 340 can be configured to control the two power modules to output the same value of power. Alternatively, the controller 340 can be configured to control the two power modules to output different values ​​of power. In addition to the two controlled power modules, the remaining power module can maintain the same output value as before, that is, the power value can remain unchanged.

[0132] The first sensor 330 and the controller 340 may be configured to perform their functions after a predetermined amount of time has passed since the substrate treatment process started. The first sensor 330 and the controller 340 may be configured to perform their functions after a predetermined amount of time has passed since the first power supply 310 started supplying power to the first electrode 410.

[0133] Figure 11is a second flow chart showing an operation method of the controller constituting the electromagnetic wave providing device according to the first embodiment of the present disclosure. rms When, in S622, the controller 340 is configured to calculate the effective value V rms With reference value V spec Then, in S623, the controller 340 is configured to determine the effective value V rms With reference value V spec Is the difference between the reference value V spec The value used to determine the distance from the reference value V spec The factor of the effective range is pre-stored in the memory. Alternatively, the factor can be sent from an external device. Alternatively, the factor can be determined by the controller 340 to be an arbitrary value.

[0134] When determining the effective value V rms At the reference value V spec When the effective value V is within the effective range, in S624, the controller 340 is configured not to adjust the power value output from the first power source 310. On the contrary, when the effective value V is determined to be within the effective range, the controller 340 is configured not to adjust the power value output from the first power source 310. rms Not within the range of the reference value V spec When the effective value V is within the effective range, in S625, the controller 340 is configured to adjust the power value output from the first power supply 310. The controller 340 may be configured to adjust the power value output from the first power supply 310 so that the effective value V rms The reference value V spec within the effective range.

[0135] The controller 340 may be configured to control all power modules in the first power supply 310 so that the effective value V rms becomes the distance from the reference value V spec Alternatively, the controller 340 may be configured to control some power modules in the first power supply 310 so that the effective value V rms becomes the distance from the reference value V spec The controller 340 controls the power module in the first power supply 310 with reference to Figure 10 has been described, and therefore, a detailed description thereof is omitted here.

[0136] The electromagnetic wave supply device 300 described above is an example of an electromagnetic wave supply device configured to supply power to the lower electrode in the substrate processing device 200. However, the present embodiment is not necessarily limited thereto. The electromagnetic wave supply device 300 can also supply power to the upper electrode in the substrate processing device 200. This will be described below.

[0137] Figure 12 2 is an exemplary diagram illustrating an electromagnetic wave providing device according to a second embodiment of the present disclosure.

[0138] Reference Figure 12 , the electromagnetic wave providing apparatus 300 may be configured to include a second power source 710 , a second impedance matching unit 720 , a second sensor 730 , and a controller 340 .

[0139] The electromagnetic wave supply device 300 can use electromagnetic waves to supply power to the second electrode 420. Like the first electrode 410, the second electrode 420 can generate plasma in the interior space of the chamber housing CH using process gas. The second electrode 420 can be placed in the interior space of the chamber housing CH. The second electrode 420 can be an upper electrode in the substrate processing apparatus 200. For example, the second electrode 420 can be a showerhead unit 240 including a showerhead body 241. Alternatively, the second electrode 420 can be an antenna unit 280 including an antenna 282.

[0140] The second power source 710 may provide power to the second electrode 420. The power provided from the second power source 710 may be transmitted to the second electrode 420 via the second impedance matching unit 720. The second power source 710 and the second impedance matching unit 720 may be interconnected via a transmission line in a manner similar to the manner in which the first power source 310 and the first impedance matching unit 320 are connected to each other.

[0141] The second power source 710 may provide power to the second electrode 420 using an RF signal. The second power source 710 may provide power to the second electrode 420 using a high frequency signal. Figures 4 to 6 The second power source 710 may be implemented as the second high frequency power source 253 included in the substrate processing apparatus 200 .

[0142] The second power supply 710 may include a plurality of power supply modules. In the above description, an example has been described in which the first power supply 310 includes a first power supply module 310a, a second power supply module 310b, and a third power supply module 310c. In this embodiment, the second power supply 710 may be provided within the electromagnetic wave providing device 300 in the same manner as the first power supply 310.

[0143] The second impedance matching unit 720 can be disposed between the second power source 710 and the second electrode 420. The second impedance matching unit 720 can enable lossless transmission of the RF signal provided by the second power source 710 to the second electrode 420. The second impedance matching unit 720 can eliminate the reactance term, allowing the RF signal to be fully transmitted to the second electrode. When multiple power modules apply power of different frequencies, the second impedance matching unit 720 can match the power applied by the multiple power modules in the second power source 710 and apply the matching result to the second electrode 420.

[0144] The second impedance matching unit 720 may be configured to include a first capacitor 510, a second capacitor 520, and a first coil 530 in a similar manner to the first impedance matching unit 710. The first capacitor 510, the second capacitor 520, and the first coil 530 have been described above with reference to Figure 8 has been described, and its detailed description is omitted here.

[0145] The second sensor 730 may be electrically connected to the second impedance matching unit 720 and each of the second electrodes 420. The second sensor 730 may measure the value of power applied to the second electrode 420 from each of the plurality of power modules in the second power supply 710. The second sensor 730 may calculate the effective value of the voltage applied to the second electrode 420 from each of the plurality of power modules in the second power supply 710.

[0146] The second sensor 730 may be configured to include a rod 560 and a second coil 570 in a similar manner to the first sensor 330. The rod 560 and the second coil 570 have been described above with reference to FIG. Figure 9 is described, and its detailed description is omitted here

[0147] The controller 340 may be configured to control the power to be applied to the second electrode 420. The controller 340 may be configured to adjust the power to be applied to the second electrode 420 based on the effective value of the voltage calculated by the second sensor 730. The controller 340 may be configured to control each power supply module in the second power supply 710 to adjust the power to be applied to the second electrode 420. Alternatively, the controller 340 may be configured to control some power supply modules in the second power supply 710 to adjust the power to be applied to the second electrode 420.

[0148] The controller 340 may be configured to compare the effective value with the reference value and adjust the power value output from the second power supply 710 based on the result of the comparison. The controller 340 may be configured to adjust the power value output from the second power supply 710 based on whether the effective value matches the reference value. The controller 340 may be configured to apply the above reference value. Figure 10The controller 340 may be configured to adjust the power values ​​output from all or some of the power modules in the second power supply 710 according to whether the effective value is within a predetermined range from the reference value. The controller 340 may be configured to apply the above reference value. Figure 11 The described scheme is used to adjust the power values ​​output from all or some power modules in the second power supply 710.

[0149] The electromagnetic wave providing device 300 can provide power to the lower electrode or the upper electrode in the substrate processing device 200. However, the present disclosure is not limited to this. The electromagnetic wave providing device 300 can provide power to both the lower electrode and the upper electrode. The electromagnetic wave providing device 300 can provide power to the lower electrode and the upper electrode for the same duration. However, the present disclosure is not limited to this. The electromagnetic wave providing device 300 can provide power to both the lower electrode and the upper electrode for different durations, respectively. Alternatively, the electromagnetic wave providing device 300 can selectively provide power to the lower electrode or the upper electrode based on the plasma environment within the chamber housing CH.

[0150] Figure 13 3 is an exemplary diagram illustrating an electromagnetic wave providing device according to a third embodiment of the present disclosure.

[0151] Reference Figure 13 The electromagnetic wave providing device 300 may be configured to include a first power source 310, a first impedance matching unit 320, a first sensor 330, a second power source 710, a second impedance matching unit 720, a second sensor 730, and a controller 340. In the following, only the components related to the above reference will be described. Figures 7 to 12 The differences in the content described.

[0152] Each of the first power supply 310 and the second power supply 710 may include a plurality of power modules. The first power supply 310 and the second power supply 710 may include the same number of power modules. However, embodiments of the present disclosure are not limited thereto, and the first power supply 310 and the second power supply 710 may include different numbers of power modules. The number of power modules in the first power supply 310 may be determined based on the effect of the first electrode 410 on maintaining the plasma density. Similarly, the number of power modules in the second power supply 710 may be determined based on the effect of the second electrode 420 on maintaining the plasma density. The number of power modules in the first power supply 310 and the number of power modules in the second power supply 710 may be the same or different depending on whether the effect of the first electrode 410 and the effect of the second electrode 420 are the same or different. The number of power modules in each of the first power supply 310 and the second power supply 710 may be determined to achieve real-time compensation.

[0153] The controller 340 can be configured to control the first power supply 310 and the second power supply 710 to output the same value of electricity. The multiple power supply modules in the first power supply 310 can output the same value of electricity, or can output different values ​​of electricity. Alternatively, some power supply modules in the first power supply 310 can output the same value of electricity, and other power supply modules can output different values ​​of electricity. Similarly, the multiple power supply modules in the second power supply 710 can output the same value of electricity, or can output different values ​​of electricity. Alternatively, some power supply modules in the second power supply 710 can output the same value of electricity, and other power supply modules can output different values ​​of electricity.

[0154] The present disclosure as described above relates to a method based on the effective value V rms A method for controlling the power to be supplied to the electrodes in the substrate processing device 200. The substrate processing device 200 performing an etching process may have a reduced plasma density due to polymer accumulation caused by the use of the substrate processing process, resulting in a reduced process yield. The plasma density can be represented based on the effective value of the voltage measured at the point where the RF signal is applied. Therefore, the power can be controlled based on this effective value so that the plasma density can be stabilized. According to the present disclosure, the power can be controlled in real time based on the effective value of the voltage, thereby improving the mass production efficiency of the product.

[0155] Next, the effective value V based on the voltage will be described. rms A method for controlling the impedance in the substrate processing apparatus 200. Based on V rms The impedance control method can detect V in real time through the sensor rms Based on V rms The impedance control method can use the power variation algorithm to maintain V rms Constant.

[0156] Figure 14 The impedance control method can be performed from the start of the substrate processing process to the end thereof. Figure 14 conduct.

[0157] Before starting the impedance control scheme, in S805, the controller 340 may be configured to define an item value for RF control. For example, the item value for RF control may be a reference value V spec , tolerance, etc. Tolerance indicates the permissible error from the reference value.

[0158] The controller 340 may be configured to define item values ​​for RF control based on the type thereof. For example, the item values ​​based on the type may include a reference value and its tolerance that can be applied when supplying RF power to the first electrode 410, a reference value and its tolerance that can be applied when supplying RF power to the second electrode 420, etc. The two reference values ​​may vary depending on the situation, such as when only the first electrode 410 is used to create a plasma environment, when only the second electrode 420 is used to create a plasma environment, or when both the first electrode 410 and the second electrode 420 are used to create a plasma environment.

[0159] Hereinafter, the case where the plasma environment is created using only the first electrode 410 will be described as an example. However, the embodiments of the present disclosure are not limited thereto, and the following description can be applied to various cases, including the case where the plasma environment is created using only the second electrode 420, or the case where the plasma environment is created using both the first electrode 410 and the second electrode 420.

[0160] When the substrate processing process begins, the first power supply 310 provides RF power. For example, one of the first power supply module 310a, the second power supply module 310b, and the third power supply module 310c can provide RF power. Alternatively, two power supply modules selected from the first power supply module 310a, the second power supply module 310b, and the third power supply module 310c can provide RF power. Alternatively, the first power supply module 310a, the second power supply module 310b, and the third power supply module 310c can provide RF power simultaneously.

[0161] When the first power source 310 provides RF power, the RF setting power applied to the first electrode 410 may be greater than 0. The controller 340 may be configured to measure the effective value of the voltage through the first sensor 330 and determine whether the measured value is greater than 0 in S810. When the measured value is greater than 0, in S815, the controller 340 may be configured to output an item value related to the RF setting power. The item value related to the RF setting power may be stored in a memory. The controller 340 may be configured to read the item value from the memory and then output the read item value. Conversely, when the measured value is 0, the controller 340 may be configured to instruct the first power source 310 to operate so that RF power can be provided. Alternatively, the controller 340 may be configured to determine that the first power source 310 is operating abnormally and notify the administrator of the abnormal operation.

[0162] A predetermined duration is required to stabilize the RF power applied to the first electrode 410. When RF power is applied to the first electrode 410, the controller 340 is configured not to immediately initiate the impedance control scheme, but to wait for a predetermined duration in S820. The predetermined duration may be predetermined. The predetermined duration may be determined according to the type of substrate processing process.

[0163] After a predetermined duration has elapsed, the first sensor 330 may measure V corresponding to an effective value based on the RF power applied from the first power source 310 to the first electrode 410 in S825. rms The controller 340 can be configured to calculate V spec Value and V rms The difference between the values ​​is determined, and it is determined whether the difference is within a tolerance in S830. The tolerance may be determined to be within a range in which no problem occurs in the substrate processing process.

[0164] When V spec Value and V rms When the difference between the values ​​is within the tolerance, the controller 340 maintains the RF power at a constant level. The controller 340 is configured not to compensate the RF power.

[0165] On the contrary, when V spec Value and V rms When the difference between the values ​​exceeds the tolerance, in S835, the controller 340 is configured to control the first power supply 310 to compensate the RF power. The controller 340 may be configured to control all power modules in the first power supply 310 so that V rms Value does not exceed V spec Alternatively, the controller 340 may be configured to control some power modules in the first power supply 310 so that V rms Value does not exceed V spec The controller 340 may be configured to calculate the compensation value using the following equation:

[0166] RF set power compensation value = A*(V spec 2 -V rms 2 )

[0167] Wherein A represents the inverse of impedance. When RF power is supplied to the first electrode 410, impedance may be measured in a portion of a line connecting the first power source 310 and the first electrode 410 to each other.

[0168] Measurement V in S825 to S835 rms value, determine V spec Value and V rmsThe process of determining whether the difference between the values ​​is within the tolerance and compensating the RF power based on the determination result may be repeated at regular time intervals. The above processes in S825 to S835 may be continuously performed until the substrate treatment process is terminated in S840.

[0169] Although the embodiments of the present disclosure have been described with reference to the accompanying drawings, the present disclosure is not limited to the above-described embodiments, but can be implemented in various forms. It will be understood by those skilled in the art that the present disclosure can be implemented in other specific forms without changing the technical concepts or features of the present disclosure. Therefore, it should be understood that the embodiments described above are not restrictive in all aspects, but illustrative.

Claims

1. A substrate processing device comprising: a chamber housing defining an interior space therein for processing a substrate therein; a process gas supply unit for supplying process gas into the interior space of the chamber housing; a first electrode disposed in the interior space of the chamber housing; as well as an electromagnetic wave providing device configured to provide power to the first electrode using electromagnetic waves, The electromagnetic wave providing device is configured to control a density of plasma generated in the inner space of the chamber housing based on an effective value of a voltage associated with the electric power.

2. The substrate processing apparatus according to claim 1, wherein: The electromagnetic wave providing device comprises: a first power supply, configured to output the power to the first electrode; a first sensor installed on a line connecting the first power source and the first electrode to each other; and A controller is configured to compensate for the power loss based on the effective value obtained by the first sensor.

3. The substrate processing apparatus according to claim 1, wherein: The electromagnetic wave providing device is configured to adjust the electric power based on a difference between the effective value and a reference value.

4. The substrate processing apparatus according to claim 3, wherein: The electromagnetic wave providing device is configured to adjust the power based on a comparison result between the difference and a tolerance.

5. The substrate processing apparatus according to claim 1, wherein: The electromagnetic wave supply device is configured to adjust the electric power based on whether the effective value and a reference value are equal to each other.

6. The substrate processing apparatus according to claim 2, wherein: The controller is configured to compensate for the loss of the power after a predetermined duration has elapsed from a time when a substrate treating process starts.

7. The substrate processing apparatus according to claim 2, wherein: The controller is configured to calculate a compensation value for compensating for a loss of the power based on the effective value, a reference value, and an impedance in a path connecting the first power source and the first electrode to each other.

8. The substrate processing apparatus according to claim 7, wherein: The controller is configured to calculate a difference between a square of the reference value and a square of the effective value, and calculate the compensation value based on the difference and the impedance.

9. The substrate processing apparatus according to claim 8, wherein: The controller is configured to calculate the compensation value by multiplying the difference value by an inverse of the impedance.

10. The substrate processing apparatus according to claim 2, wherein: The first sensor includes: a rod connected to the first power source via a second transmission line and to the first electrode via a third transmission line; and A second coil is wound around the rod.

11. The substrate processing apparatus according to claim 2, wherein: The electromagnetic wave providing device further includes: a first impedance matching unit installed on a line connecting the first power source and the first sensor.

12. The substrate processing apparatus according to claim 11, wherein: The first impedance matching unit includes: a fourth transmission line, connecting the first power source and the first sensor to each other; a first capacitor mounted on the fourth transmission line; a first coil mounted on the fourth transmission line; a fifth transmission line branched from the fourth transmission line and connected to ground; and A second capacitor is installed on the fifth transmission line.

13. The substrate processing apparatus according to claim 12, wherein: The first capacitor is disposed closer to the first sensor than the first coil.

14. The substrate processing apparatus according to claim 12, wherein: A point at which the fifth transmission line branches off from the fourth transmission line is disposed closer to the first power source than the first coil.

15. The substrate processing apparatus according to claim 1, wherein The first electrode is implemented as an electrostatic chuck disposed in the inner space of the chamber housing to support the substrate on the electrostatic chuck.

16. The substrate processing apparatus according to claim 1, further comprising: a second electrode disposed in the interior space of the chamber housing or adjacent to an outer surface of the chamber housing, Wherein, the electromagnetic wave providing device is configured to provide the power to the first electrode and the second electrode.

17. The substrate processing apparatus according to claim 16, wherein: The second electrode is implemented as a showerhead unit for supplying the process gas into the inner space of the chamber housing, or as an antenna unit for generating an electromagnetic field in the inner space of the chamber housing.

18. An electromagnetic wave providing device included in a process chamber configured to process a substrate using plasma, in, The electromagnetic wave providing device comprises: a power supply configured to supply power to an electrode housed in the process chamber using electromagnetic waves; an impedance matching unit configured to perform impedance matching between the power source and the electrode; a sensor mounted on a line connecting the power source and the electrode to each other; and a controller configured to compensate for the loss of the electric power based on an effective value of the voltage obtained by the sensor, The controller is configured to control a density of plasma generated in an inner space of the process chamber based on the effective value.

19. The electromagnetic wave providing device according to claim 18, wherein: The controller is configured to calculate a compensation value for compensating for the loss of the electric power based on an impedance in a path connecting the power source and the electrode to each other, the effective value, and a reference value. The controller is configured to calculate a difference between the square of the reference value and the square of the effective value, and multiply the difference by the inverse of the impedance to obtain the compensation value.

20. A substrate processing apparatus, comprising: a chamber housing defining an interior space therein for processing a substrate therein; a process gas supply unit for supplying process gas into the interior space of the chamber housing; a first electrode disposed in a lower region of the interior space of the chamber housing; a second electrode disposed in an upper region of the interior space of the chamber housing; as well as an electromagnetic wave supply device configured to supply power to at least one of the first electrode and the second electrode using electromagnetic waves, Wherein, the electromagnetic wave providing device includes: a first power supply, configured to output the power to the first electrode; a first sensor mounted on a line connecting the first power source and the first electrode to each other; a second power supply, configured to output the power to the second electrode; a second sensor installed on a line connecting the second power source and the second electrode to each other; and A controller is configured to compensate for the power loss based on an effective value of a voltage obtained by at least one of the first sensor and the second sensor.

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