Image sensor based on metasurface optical routing and electronic equipment

Abstract

The invention discloses an image sensor based on metasurface optical routing and electronic equipment, and relates to the technical field of optical imaging. The image sensor comprises a metasurface optical routing area and a photoelectric conversion layer which are arranged in a stacked mode, the metasurface optical routing area comprises a plurality of optical routing units, and each optical routing unit comprises at least one layer of optical routing structure with the refractive index changing in the direction perpendicular to incident light; the photoelectric conversion layer comprises a plurality of photoelectric conversion elements, and each optical routing unit corresponds to at least two photoelectric conversion elements. According to the technical scheme, the incident light is redistributed through the light routing structure in the metasurface light routing area, and the light energy utilization rate is improved.

Description

Technical Field

[0001] The present invention relates to the field of optical imaging technology, and more specifically to an image sensor and electronic equipment based on metasurface optical routing. Background Art

[0002] In recent years, with the advancement of semiconductor processes and equipment, as well as the continuous iteration of consumer electronics, the trend toward pixel miniaturization in image sensors has become unstoppable. However, this reduction in pixel size reduces the photosensitive area of ​​a single pixel and reduces the efficiency of microlenses and color filter arrays, leading to reduced luminous flux and a lower signal-to-noise ratio. To address these issues, back-illuminated and pixel-binning technologies have been incorporated into image sensors, and microlenses and color filter arrays have been continuously optimized. However, none of these approaches can fundamentally address the issue of low light energy utilization.

[0003] Therefore, in order to solve the above problems, the present invention provides an image sensor and electronic device based on metasurface optical routing that can improve light energy utilization. Summary of the Invention

[0004] The present invention provides an image sensor and electronic equipment based on metasurface optical routing, aiming to solve the problem of low existing light energy utilization rate.

[0005] In order to achieve the above-mentioned objectives, on the one hand, the present invention provides an image sensor based on metasurface optical routing, comprising a stacked metasurface optical routing area and a photoelectric conversion layer, wherein the metasurface optical routing area includes a plurality of optical routing units, and the optical routing unit includes at least one layer of optical routing structure with a refractive index changing in a direction perpendicular to the incident light; the photoelectric conversion layer includes a plurality of photoelectric conversion elements, and each of the optical routing units corresponds to at least two of the photoelectric conversion elements.

[0006] Its further technical solution is: the optical routing structure is any one of a combination structure of nanopillars or nanopores with fixed periodic diameter changes, a combination structure of nanopillars or nanopores with fixed periodic diameter changes, a combination structure of nanopillars or nanopores with periodic diameter changes, a pixelated surface structure, and an accompanying surface structure with no fixed period and shape.

[0007] A further technical solution is: a filling layer is provided between the two optical routing structures.

[0008] A further technical solution is: the parameters of the nanocolumns are calculated using a genetic algorithm based on the parameters of the image sensor; and / or the companion surface is calculated using a companion algorithm based on the parameters of the image sensor.

[0009] A further technical solution is that the optical routing units are different or the same from the center of the image sensor outward.

[0010] Its further technical solution is: the image sensor also includes a spacer layer, which is located between the metasurface optical routing area and the photoelectric conversion layer, and the spacer layer includes multiple identical spacer areas, and the multiple spacer areas correspond one-to-one to the multiple optical routing units.

[0011] A further technical solution is as follows: the spacer layer further comprises a plurality of identical isolation walls, the isolation walls are located between two adjacent spacer areas, and the isolation walls are made of a working wavelength absorbing material.

[0012] A further technical solution is: the image sensor also includes a color filter array, the color filter array is located between the spacer layer and the photoelectric conversion layer, the color filter array includes a plurality of color filter units, and the plurality of color filter units correspond one-to-one to the plurality of photoelectric conversion elements.

[0013] A further technical solution is: the color filter units and the photoelectric conversion elements corresponding to each other constitute a plurality of detection components, and a partition wall is provided between adjacent detection components, and the partition wall is made of a highly reflective material at the working wavelength.

[0014] A further technical solution is as follows: a partition wall is provided between two adjacent photoelectric conversion elements, and the partition wall is made of a highly reflective material at the working wavelength.

[0015] A further technical solution is: the image sensor also includes an anti-reflection layer.

[0016] In order to achieve the above-mentioned purpose, in another aspect, the present invention further provides an electronic device, comprising the image sensor based on metasurface optical routing in the above-mentioned aspect.

[0017] Embodiments of the present invention provide an image sensor and electronic device based on metasurface optical routing. The image sensor comprises a stacked metasurface optical routing region and a photoelectric conversion layer. The metasurface optical routing region includes multiple optical routing units, each containing at least one optical routing structure with a varying refractive index perpendicular to the direction of incident light. The photoelectric conversion layer includes multiple photoelectric conversion elements, with each optical routing unit corresponding to at least two photoelectric conversion elements. In this embodiment of the present invention, the optical routing structures in the metasurface optical routing region redistribute incident light, improving light energy utilization. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic diagram of the technical principle of the metasurface optical routing area in the image sensor based on metasurface optical routing of the present invention; Figure 2 Schematic diagram of the optical routing structure of the image sensor based on metasurface optical routing of the present invention; Figure 3 A schematic diagram of an image sensor based on metasurface optical routing according to the present invention; Figure 4 for Figure 3 Schematic diagram of the corresponding relationship between the optical routing unit and the photoelectric conversion element; Figure 5 for Figure 3 Schematic diagram of the structure of the optical routing unit; Figure 6 for Figure 3 Schematic diagram of different incident angles at different positions of the image sensor; Figure 7 for Figure 3 Schematic diagram of the arrangement of the optical routing units; Figure 8 for Figure 3 Schematic diagram of energy distribution of light of different wavelengths on the photoelectric conversion layer; Figure 9 is another schematic diagram of the image sensor based on metasurface optical routing of the present invention; Figure 10 for Figure 9 Schematic diagram of the corresponding relationship between the optical routing unit and the photoelectric conversion element; Figure 11 for Figure 9 Schematic diagram of the structure of the optical routing unit; Figure 12 for Figure 9 Schematic diagram of the arrangement of the optical routing units; Figure 13 for Figure 9 Schematic diagram of energy distribution of light of different wavelengths on the photoelectric conversion layer; Figure 14 This is a schematic diagram of the initial refractive index distribution of a layer randomly generated when calculating the adjoint surface using the adjoint algorithm; Reference numerals: 1. Metasurface optical routing area; 11. Optical routing unit; 110. First filling layer; 111. First optical routing structure; 1111. First nanopillar; 1112. First filling material; 112. Second optical routing structure; 1121. Second nanopillar; 1122. Second filling material; 120. Second filling layer; 121. Third optical routing structure; 1211. First high refractive index material; 1212. First low refractive index material; 122. Fourth optical routing structure; 1221. Second high refractive index material; 1222. Second low refractive index material; 123. Fifth optical routing structure; 1231. Third high refractive index material; 1232. Third low refractive index material; 2. Spacer layer; 21. Spacer area; 22. Isolation wall; 3. Color filter array; 4. Photoelectric conversion layer; 5. Isolation wall. DETAILED DESCRIPTION

[0019] The following will be combined with the accompanying drawings of the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments. Similar component numbers in the drawings represent similar components. Obviously, the embodiments described below are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0020] See also Figure 1 , Figure 1 Schematic diagram of the technical principle of the metasurface optical routing area in the image sensor based on metasurface optical routing of the present invention. Figure 1 As shown, the image sensor based on metasurface optical routing includes a stacked metasurface optical routing area 1 and a photoelectric conversion layer 4, wherein the metasurface optical routing area 1 includes a plurality of optical routing units 11, and the optical routing unit 11 includes at least one layer of optical routing structure with a refractive index varying in a direction perpendicular to the incident light; the photoelectric conversion layer 4 includes a plurality of photoelectric conversion elements, and each of the optical routing units 11 corresponds to at least two of the photoelectric conversion elements. In some embodiments, a partition wall 5 is provided between two adjacent photoelectric conversion elements, and the partition wall 5 is made of a highly reflective material at the working wavelength. It should be noted that, in an embodiment of the present invention, the incident light is redistributed by the optical routing structure in the metasurface optical routing area 1, that is, by rationally designing the metasurface phase distribution, light of different wavelengths can be separated to the corresponding photoelectric conversion element positions, thereby improving the light energy utilization rate.

[0021] In some embodiments, such as the present embodiment, Figure 2As shown, the optical routing structure is any one of a combination structure of nanopillars or nanopores with fixed periodic diameter changes, a combination structure of nanopillars or nanopores with fixed diameters and periodic diameter changes, a combination structure of nanopillars or nanopores with periodic diameter changes, a pixelated surface structure, and an accompanying surface structure with no fixed period and shape. Specifically, a filling layer is provided between the two optical routing structures. More specifically, Figure 2 (a) is a composite structure of nanopillars or nanopores with periodic fixed diameter changes. Figure 2 (b) is a composite structure of nanopillars or nanopores with fixed diameters and periodic variations. Figure 2 (c) is a composite structure of nanopillars or nanopores with periodic diameter changes. Figure 2 (d) in the figure is a pixelated surface structure. Figure 2 (e) in the figure represents a companion surface structure with no fixed period or shape. It should be noted that in this embodiment, the parameters of the nanopillars are calculated using a genetic algorithm based on the parameters of the image sensor; and / or the companion surface is calculated using an adjoint algorithm based on the parameters of the image sensor. It can be understood that this optical routing structure can redistribute incident light, improving light energy utilization.

[0022] Furthermore, in this embodiment, the parameters of the nanopillars are calculated using a genetic algorithm based on the parameters of the image sensor, specifically including the following steps: (1) Model establishment: establishing a corresponding simulation model based on the parameters of the image sensor, wherein the parameters of the image sensor include pixel size and number of pixels; (2) Optimizer parameter setting: setting the number of variables, population size, maximum number of iterations, upper and lower bounds of variables, mutation rate, variable accuracy, and fitness, wherein fitness is the sum of the average transmittance of the corresponding wavelength band light received by all photoelectric conversion elements in the image sensor; (3) Initialization: setting the evolution counter to 0, and randomly generating a number of random individuals as is the initial population; (4) individual evaluation: the fitness of each individual in the initial population is calculated according to the established simulation model; (5) selection: the selection operator is applied to the population, and individuals are selected according to the fitness; (6) crossover: the crossover operator is applied to the population, the genes of the selected individuals are exchanged, and new individuals are generated; (7) mutation: the mutation operator is applied to the population, and the genes of the individuals are randomly mutated with a certain probability to increase the diversity of the population; (8) population update: after steps (5) to (7), a new population is obtained; (9) stop condition judgment: if the maximum number of iterations is reached or a convergent solution is found, the population update is stopped, otherwise steps (4) to (8) are repeated. It should be noted that in this embodiment, a corresponding simulation model is established by electromagnetic wave simulation software according to the parameters of the image sensor; the fitness of each individual in the initial population is calculated according to the established simulation model. Specifically, the individuals in the initial population are substituted into the established simulation model one by one to obtain the fitness of each individual. It should also be noted that in this embodiment, the populations in steps (5) to (7) are the initial population and the population updated in step (8). The selection operator in step (5) includes sorting selection, random uniform selection, etc. The converged solution in step (9) is specifically fitness stability and population convergence. Fitness stability means that the fitness of the optimal individual no longer increases significantly over multiple generations, and population convergence means that the genetic diversity of individuals in the population decreases. It can be understood that the nanopillar parameters can be obtained through the above steps (1) to (9).

[0023] Furthermore, in this embodiment, the companion surface is calculated using the adjoint algorithm according to the parameters of the image sensor, which specifically includes the following steps: (1) Model establishment: establishing a corresponding surface simulation model according to the parameters of the image sensor, wherein the surface simulation model includes a forward propagation model and a reverse adjoint model, and the parameters of the image sensor include pixel size and number of pixels; (2) Optimizer parameter setting: gradient descent step size, learning rate, maximum number of iterations, blur function, blur kernel size and objective function, etc., wherein the objective function is defined as the sum of the average transmittance of the corresponding band light received by all photoelectric conversion elements in the image sensor; (3) Initialization: the iteration counter is set to 0, and a three-layer adjoint surface with a random refractive index distribution is generated (one layer of the refractive index distribution is as follows Figure 14 As shown); (4) Forward propagation: Run the forward propagation model to calculate the target function and the electric field distribution at the adjoint surface; (5) Reverse propagation: Run the reverse adjoint model to calculate the electric field distribution at the adjoint surface; (6) Gradient calculation: Obtain the electric field distribution according to steps (4) and (5) and calculate the refractive index gradient; (7) Adjoint surface update: Update the refractive index gradient to the original refractive index distribution and perform fuzzy operation; (8) Stop condition judgment: If the maximum number of iterations is reached, stop, otherwise repeat steps (4) to (7). It should be noted that in this embodiment, the corresponding surface simulation model is established by electromagnetic wave simulation software according to the parameters of the image sensor; and a three-layer adjoint surface with a random refractive index distribution is generated by a random function. It should also be noted that in this embodiment, step (7) is to update the refractive index gradient to the refractive index distribution in the forward propagation model of step (4). It can be understood that the adjoint surface can be obtained through the above steps (1) to (8).

[0024] In some embodiments, such as the present embodiment, Figure 3 and Figure 9 As shown, the image sensor further includes a spacer layer 2, the spacer layer 2 is located between the metasurface optical routing area 1 and the photoelectric conversion layer 4, the spacer layer 2 includes a plurality of identical spacer regions 21, and the plurality of spacer regions 21 correspond one to one with the plurality of optical routing units 11. Specifically, as Figure 9 As shown, the image sensor is composed of a metasurface optical routing area 1, a spacer layer 2, and a photoelectric conversion layer 4 from top to bottom. The metasurface optical routing area 1 includes a plurality of optical routing units 11. The spacer layer 2 includes a plurality of identical spacers 21, and the optical routing units 11 correspond to the spacers 21 one by one. The photoelectric conversion layer 4 includes a plurality of photoelectric conversion elements. Each optical routing unit 11 corresponds to at least two photoelectric conversion elements. Figure 10 As shown, each optical routing unit 11 corresponds to four photoelectric conversion elements. Figure 11As shown, the optical routing unit 11 includes three layers of optical routing structures, namely a third optical routing structure 121, a fourth optical routing structure 122, and a fifth optical routing structure 123. Each layer of the optical routing structure is composed of an optimized companion surface with no fixed period and shape. The third optical routing structure 121 includes a first high-refractive index material 1211 and a first low-refractive index material 1212, the fourth optical routing structure 122 includes a second high-refractive index material 1221 and a second low-refractive index material 1222, and the fifth optical routing structure 123 includes a third high-refractive index material 1231 and a third low-refractive index material 1232. It should be noted that in this embodiment, the companion surfaces of the three layers of optical routing structures can be the same or different, and are specifically calculated using the companion algorithm based on the parameters of the image sensor. The specific steps for calculating the companion surfaces using the companion algorithm based on the parameters of the image sensor are as described above and will not be repeated here for simplicity. A filling layer is provided between the two optical routing structures. Specifically, a second filling layer 120 with a certain thickness is provided between the third optical routing structure 121 and the fourth optical routing structure 122 and between the fourth optical routing structure 122 and the fifth optical routing structure 123 .

[0025] Considering that image sensor chips are often used in conjunction with optical lenses, the light passing through the lens has different angles at different image heights in most cases, such as Figure 6 As shown, the incident angles of light received by the center and edge of the image sensor chip are different. It can be understood that in some cases, the angles of light from the lens are the same at different image heights. In this case, the light routing unit 11 is the same from the center of the image sensor outward. The following is a detailed description of the situation when the angles of light from the lens are different at different image heights. In order to reduce the response difference between the center and edge of the image sensor chip, separate designs are made for different incident angles during design, such as Figure 12 As shown, the optical routing unit 11 is different from the center of the image sensor to the outside, that is, the optical routing unit 11 changes with the angle from the center of the image sensor chip to the outside, as shown in FIG. Figure 12 As shown in the figure, the optical routing units 11 at the center and corner positions of the image sensor are different. After the incident light passes through the metasurface optical routing area 1, it will be deflected in different directions according to the wavelength of the light, and then freely propagate in the spacer layer 2 and focus on the photoelectric conversion layer 4. The energy distribution of light of different wavelengths on the photoelectric conversion layer 4 is shown in the figure. Figure 13 shown, specifically, Figure 13 The energy distribution of light with wavelengths of 450nm, 550nm, 650nm and 850nm in the photoelectric conversion layer 4 is shown in FIG. Figures 9 to 13 The image sensor demonstrated can achieve simultaneous detection of visible light and near-infrared.

[0026] In some embodiments, such as the present embodiment, Figure 3 As shown, the spacer layer 2 further includes a plurality of identical isolation walls 22, the isolation walls 22 being located between two adjacent spacer regions 21, and the isolation walls 22 being made of a material absorbing the working wavelength. Figure 3 As shown, the image sensor further includes a color filter array 3, the color filter array 3 is located between the spacer layer 2 and the photoelectric conversion layer 4, and the color filter array 3 includes a plurality of color filter units, and the plurality of color filter units correspond one to one to the plurality of photoelectric conversion elements. More specifically, as Figure 3 As shown, when a color filter array 3 is provided between the isolation layer 2 and the photoelectric conversion layer 4, the corresponding color filter units and the photoelectric conversion elements constitute multiple detection assemblies. The isolation walls 5 are provided between adjacent detection assemblies and are made of a highly reflective material at the operating wavelength. It should be noted that in this embodiment, the isolation walls 22 are made of a visible light absorbing material to reduce crosstalk between pixels. The isolation walls 5 are made of a highly reflective material for visible light to reduce crosstalk between pixels and increase energy collection efficiency. The color filter array 3 is consistent with the color filter array of a traditional image sensor, filtering out interfering light while shaping the transmission spectrum, reducing color crosstalk and simplifying the debugging of the ISP algorithm. An ISP algorithm (Image Signal Processor) refers to a series of specialized algorithms used to process raw image sensor output signals. Its core goal is to convert the raw data collected by the sensor into a high-quality final image that conforms to human vision.

[0027] In some embodiments, such as the present embodiment, Figure 3 As shown, the image sensor comprises, from top to bottom, a metasurface optical routing area 1, a spacer layer 2, a color filter array 3, and a photoelectric conversion layer 4, wherein the metasurface optical routing area 1 includes a plurality of optical routing units 11; the spacer layer 2 includes a plurality of identical spacers 21 and isolation walls 22, the optical routing units 11 correspond one-to-one to the spacers 21, and the isolation walls 22 are located between two adjacent spacers 21; the color filter array 3 includes a plurality of color filter units; the photoelectric conversion layer 4 includes a plurality of photoelectric conversion elements, and the isolation wall 5 is provided between two adjacent photoelectric conversion elements, wherein the photoelectric conversion elements correspond one-to-one to the color filter units, and the one-to-one corresponding color filter units and the photoelectric conversion elements constitute a plurality of detection components, and at this time, the isolation wall 5 is provided between two adjacent detection components. Each optical routing unit 11 corresponds to at least two photoelectric conversion elements. Specifically, as Figure 4 As shown, in this embodiment, each optical routing unit 11 corresponds to four photoelectric conversion elements. Figure 5As shown, the optical routing unit 11 includes two layers of optical routing structures, namely a first optical routing structure 111 and a second optical routing structure 112. The first optical routing structure 111 includes a first nanocolumn 1111 with a varying diameter and period and a first filling material 1112. The second optical routing structure 112 includes a second nanocolumn 1121 with a varying diameter and period and a second filling material 1122. The nanocolumn parameters of the two layers of optical routing structures may be the same or different, specifically calculated using a genetic algorithm based on the parameters of the image sensor. A filling layer is provided between the two optical routing structures. Specifically, a first filling layer 110 of a certain thickness exists between the first optical routing structure 111 and the second optical routing structure 112. The first filling layer 110 and the second filling layer 120 may be the same or different, depending on the actual situation. Considering that image sensor chips are often used in conjunction with optical lenses, and the light passing through the optical lens often has different angles at different image heights, such as Figure 6 As shown, the incident angles of light received by the center and edge of the image sensor chip are different. In order to reduce the response difference between the center and edge of the image sensor chip, separate designs are made for different incident angles during design. That is, the optical routing unit 11 changes from the center of the image sensor chip to the outside. That is, the optical routing unit 11 changes with the incident angle from the center of the image sensor chip to the outside. Figure 7 As shown in the figure, the optical routing units 11 at the center and corners of the image sensor are different. After the incident light passes through the metasurface optical routing area 1, it will be deflected in different directions according to the wavelength of the light, and then freely propagate in the spacer layer 2, and then filtered by the color filter array 3 and focused on the photoelectric conversion layer 4. The energy distribution of light of different wavelengths on the photoelectric conversion layer 4 is shown as follows: Figure 8 shown, specifically, Figure 8 The energy distribution of light with wavelengths of 450nm, 550nm and 650nm in the photoelectric conversion layer 4 is shown in FIG. Figure 8 The energy distribution in the figure shows that the three colors of RGB light form a color filter array similar to the traditional RGGB Bayer array at different photoelectric conversion elements on the photoelectric conversion layer 4. The traditional RGGB Bayer array is a color filter array widely used in digital image sensors. Figures 3 to 8 The image sensor on display can detect visible light bands, and its pixel array is consistent with the traditional Bayer array.

[0028] In certain embodiments, such as the present embodiment, the image sensor further includes an anti-reflection layer. The anti-reflection layer may be disposed between the color filter array 3 and the photoelectric conversion layer 4, or may be disposed above the metasurface optical routing region 1, between the metasurface optical routing region 1 and the spacer layer 2, between the spacer layer 2 and the color filter array 3, between the spacer layer 2 and the photoelectric conversion layer 4, or may be located in these locations simultaneously. It should be noted that in this embodiment, the anti-reflection layer has high transmittance in the operating wavelength band.

[0029] In certain embodiments, such as this embodiment, an electronic device is further provided, which includes the above-mentioned image sensor based on metasurface optical routing.

[0030] In summary, the image sensor based on metasurface optical routing provided in this embodiment uses metasurface optical routing to redistribute incident light and improve energy utilization. The design takes into account the problem of the change in the incident angle of light from the center to the outside of the image sensor chip. By setting the optical routing unit to be different from the center to the outside of the image sensor, the performance of the center and edge of the chip is kept similar, thereby improving the problem of inconsistent response between the center and edge of the chip. The design takes into account the crosstalk problem between pixels, and reduces the impact on image resolution by setting isolation walls and isolation walls. The operating bands of the image sensor in this embodiment can be visible light, near infrared, visible light-near infrared, and mid-to-far infrared.

[0031] The present invention has been described above in conjunction with the best embodiments, but the present invention is not limited to the embodiments disclosed above, but should cover various modifications and equivalent combinations based on the essence of the present invention.

Claims

1. An image sensor based on metasurface optical routing, characterized in that: It includes a super-surface optical routing area and a photoelectric conversion layer arranged in a stacked manner, wherein: The metasurface optical routing area includes a plurality of optical routing units, each of which includes at least one optical routing structure having a refractive index that varies in a direction perpendicular to the incident light, and each of the optical routing units varies from the center of the image sensor outward; The photoelectric conversion layer includes a plurality of photoelectric conversion elements, and each of the optical routing units corresponds to at least two of the photoelectric conversion elements.

2. The image sensor based on metasurface optical routing according to claim 1, wherein: The optical routing structure is any one of a combination structure of nanopillars or nanopores with fixed periodic diameter changes, a combination structure of nanopillars or nanopores with fixed diameters and periodic diameter changes, a combination structure of nanopillars or nanopores with periodic diameter changes, a pixelated surface structure, and an accompanying surface structure with no fixed period and shape.

3. The image sensor based on metasurface optical routing according to claim 2, wherein: A filling layer is provided between the two optical routing structures.

4. The image sensor based on metasurface optical routing according to claim 2, wherein: The parameters of the nanorods are calculated using a genetic algorithm based on the parameters of the image sensor; and / or The companion surface is calculated using a companion algorithm according to parameters of the image sensor.

5. The image sensor based on metasurface optical routing according to claim 1, wherein: The image sensor also includes a spacer layer, which is located between the metasurface optical routing area and the photoelectric conversion layer. The spacer layer includes a plurality of identical spacer areas, and the plurality of spacer areas correspond one-to-one to the plurality of optical routing units.

6. The image sensor based on metasurface optical routing according to claim 5, wherein: The spacer layer further includes a plurality of identical isolation walls, wherein the isolation walls are located between two adjacent spacer regions and are made of a working wavelength absorbing material.

7. The image sensor based on metasurface optical routing according to claim 5, wherein: The image sensor further includes a color filter array, which is located between the spacer layer and the photoelectric conversion layer. The color filter array includes a plurality of color filter units, and the plurality of color filter units correspond one-to-one to the plurality of photoelectric conversion elements.

8. The image sensor based on metasurface optical routing according to claim 7, wherein: The color filter units and the photoelectric conversion elements corresponding to each other one by one constitute a plurality of detection components. A partition wall is provided between adjacent detection components, and the partition wall is made of a highly reflective material at the working wavelength.

9. The image sensor based on metasurface optical routing according to claim 1, wherein: A partition wall is provided between two adjacent photoelectric conversion elements, and the partition wall is made of a highly reflective material at the working wavelength.

10. The image sensor based on metasurface optical routing according to claim 1, wherein: The image sensor further includes an antireflection layer.

11. An electronic device, characterized in that: The electronic device includes the image sensor based on metasurface optical routing according to any one of claims 1 to 10.

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